1
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Zhang T, Zhu L. Unveiling the strain-sensitive thermal transport properties of chlorinated diamane. Phys Chem Chem Phys 2024; 26:23979-23985. [PMID: 39240309 DOI: 10.1039/d4cp01239a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/07/2024]
Abstract
The impact of tensile biaxial strain on the thermal transport properties of hydrogen (HD), fluorine (FD), and chlorine (ClD) functionalized diamane is investigated by using the Boltzmann transport equation. Our results reveal ClD as an exceptionally strain-sensitive material for thermal transport applications, exhibiting a 70% reduction in thermal conductivity at a 5% strain-outperforming HD and FD. The strain-induced modifications in phonon dispersion and phonon scattering rates result in the unique responsiveness of ClD. This discovery positions ClD as a promising candidate for applications demanding highly tunable thermal conductivity. The ability to precisely control thermal properties makes ClD an ideal candidate for the development of thermal smart metamaterials, opening avenues for innovations in thermal management and diverse applications in the field of advanced materials.
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Affiliation(s)
- Tingting Zhang
- Department of Physics, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an 223300, People's Republic of China.
| | - Liyan Zhu
- Department of Physics, and Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems, Huaiyin Normal University, Huai'an 223300, People's Republic of China.
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2
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Bandyopadhyay AS, Puthirath AB, Ajayan PM, Zhu H, Lin Y, Kaul AB. Intrinsic and Strain-Dependent Properties of Suspended WSe 2 Crystallites toward Next-Generation Nanoelectronics and Quantum-Enabled Sensors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3640-3653. [PMID: 38268147 DOI: 10.1021/acsami.3c13603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Two-dimensional (2D) layered materials exhibit great potential for high-performance electronics, where knowledge of their thermal and phononic properties is critical toward understanding heat dissipation mechanisms, considered to be a major bottleneck for current generation nanoelectronic, optoelectronic, and quantum-scale devices. In this work, noncontact Raman spectroscopy was used to analyze thermal properties of suspended 2D WSe2 membranes to access the intrinsic properties. Here, the influence of electron-phonon interactions within the parent crystalline WSe2 membranes was deciphered through a comparative analysis of extrinsic substrate-supported WSe2, where heat dissipation mechanisms are intimately tied to the underlying substrate. Moreover, the excitonic states in WSe2 were analyzed by using temperature-dependent photoluminescence spectroscopy, where an enhancement in intensity of the localized excitons in suspended WSe2 was evident. Finally, phononic and electronic properties in suspended WSe2 were examined through nanoscale local strain engineering, where a uniaxial force was induced on the membrane using a Au-coated cantilever within an atomic force microscope. Through the fundamental analysis provided here with temperature and strain-dependent phononic and optoelectronic properties in suspended WSe2 nanosheets, the findings will inform the design of next-generation energy-efficient, high-performance devices based on WSe2 and other 2D materials, including for quantum applications.
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Affiliation(s)
- Avra S Bandyopadhyay
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
| | - Anand B Puthirath
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Hanyu Zhu
- Materials Science and Nano Engineering Department, Rice University, Houston, Texas 77005, United States
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, Texas 76201, United States
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, Texas 76207, United States
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76207, United States
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3
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Yin Z, Panaccione W, Hu A, Douglas ORT, Tanjil MRE, Jeong Y, Zhao H, Wang MC. Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe 2) under Uniaxial Elastic Strain. NANO LETTERS 2023; 23:11763-11770. [PMID: 38100381 DOI: 10.1021/acs.nanolett.3c03706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.
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Affiliation(s)
- Zhewen Yin
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Wyatt Panaccione
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Anjun Hu
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Ossie R T Douglas
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Md Rubayat-E Tanjil
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Yunjo Jeong
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Huijuan Zhao
- Department of Mechanical Engineering, Clemson University, Clemson, South Carolina 29634-0921, United States
| | - Michael Cai Wang
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Chemical, Biological, and Materials Engineering, University of South Florida, Tampa, Florida 33620, United States
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4
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Sun C, Zheng J, Zhang S, Zhao P, Guo P, Jiang Z. Key phonon modes to determine the phase transition of two dimensional Janus transition metal dichalcogenides: a DFT and tight-binding study. Phys Chem Chem Phys 2023; 25:31098-31106. [PMID: 37947158 DOI: 10.1039/d3cp03534d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Phase stability and the phase transition of Janus transition metal chalcogenides (TMDs) have become interesting issues that have not been fully resolved since their successful synthesis. By fitting the results from first principles calculations, a tight-binding dynamics matrix of the 1T' phase is constructed and the eigenvectors are also obtained. We propose a method to project the atomic motion causing the phase transition from 2H to 1T' onto these eigenvectors, and identify four key phonon modes which are the major factors to trigger phase transition. Temperature excitation is used to excite the key modes and the free energy criterion is used to determine the phase stability. The relatively large enthalpy difference between the 2H and 1T' phases favours the 2H one as the stable phase at low temperature. While the 1T' phase has a quick increase in vibrational free energy with rising temperature, especially for 1T' Janus TMDs which have a quicker increase in the total free energy than that of 1T' non-Janus TMDs, making them show a lower phase transition temperature. Our work will deepen our understanding of the phase transition behavior of 2D Janus TMDs, and the tight-binding dynamics matrix and the method to obtain the key modes will be a useful tool for further study of the phase transitions of 2D Janus TMDs and other related materials.
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Affiliation(s)
- Chengyue Sun
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710069, China.
| | - Jiming Zheng
- National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) in Shaanxi Province, Northwest University, Xi'an 710069, China.
| | - Sujuan Zhang
- National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) in Shaanxi Province, Northwest University, Xi'an 710069, China.
| | - Puju Zhao
- Department of Physics, Northwest University, Xi'an 710069, China
| | - Ping Guo
- Department of Physics, Northwest University, Xi'an 710069, China
| | - Zhenyi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710069, China.
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5
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Ramzan MS, Cocchi C. Strained Monolayer MoTe 2 as a Photon Absorber in the Telecom Range. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2740. [PMID: 37887890 PMCID: PMC10608843 DOI: 10.3390/nano13202740] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Revised: 09/16/2023] [Accepted: 09/18/2023] [Indexed: 10/28/2023]
Abstract
To achieve the atomistic control of two-dimensional materials for emerging technological applications, such as valleytronics, spintronics, and single-photon emission, it is of paramount importance to gain an in-depth understanding of their structure-property relationships. In this work, we present a systematic analysis, carried out in the framework of density-functional theory, on the influence of uniaxial strain on the electronic and optical properties of monolayer MoTe2. By spanning a ±10% range of deformation along the armchair and zigzag direction of the two-dimensional sheet, we inspect how the fundamental gap, the dispersion of the bands, the frontier states, and the charge distribution are affected by strain. Under tensile strain, the system remains a semiconductor but a direct-to-indirect band gap transition occurs above 7%. Compressive strain, instead, is highly direction-selective. When it is applied along the armchair edge, the material remains a semiconductor, while along the zigzag direction a semiconductor-to-metal transition happens above 8%. The characteristics of the fundamental gap and wave function distribution are also largely dependent on the strain direction, as demonstrated by a thorough analysis of the band structure and of the charge density. Additional ab initio calculations based on many-body perturbation theory confirm the ability of strained MoTe2 to absorb radiation in the telecom range, thus suggesting the application of this material as a photon absorber upon suitable strain modulation.
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Affiliation(s)
| | - Caterina Cocchi
- Institut für Physik, Carl von Ossietzky Universität, 26129 Oldenburg, Germany
- Center for Nanoscale Dynamics (CeNaD), Carl von Ossietzky Universität, 26129 Oldenburg, Germany
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6
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Tang S, Wan D, Bai S, Fu S, Wang X, Li X, Zhang J. Enhancing phonon thermal transport in 2H-CrX 2 (X = S and Se) monolayers through robust bonding interactions. Phys Chem Chem Phys 2023; 25:22401-22414. [PMID: 37581216 DOI: 10.1039/d3cp03420h] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Inspired by the groundbreaking discovery of the 2H-MoS2 monolayer with outstanding physical properties, the electronic structure, structural stability, and thermal transport of 2H-CrX2 (X = S and Se) monolayers are theoretically evaluated using density functional theory (DFT) calculations and semiempirical Boltzmann transport theory. The 2H-CrX2 (X = S and Se) monolayers are direct semiconductors with the bandgaps of 0.91 and 0.69 eV. The elastic modulus and phonon dispersion curve analysis show that the 2H-CrX2 (X = S and Se) monolayers possess excellent mechanical and dynamic stabilities on account of elastic constants satisfying the Born-Huang criterion and the absence of negative frequencies. The thermal stabilities of the 2H-CrX2 (X = S and Se) monolayers at 300 K are proved by ab initio molecular dynamics (AIMD) simulations, as evidenced by the slight changes in the structural evolution and small fluctuation in total energy. High thermal conductivities of 131.7 and 88.6 W m-1 K-1 are discovered for 2H-CrS2 and 2H-CrSe2 monolayers at 300 K. Further analysis of the phonon group velocity, phonon relaxation time, and Grüneisen parameter shows that the high lattice thermal conductivities of 2H-CrX2 (X = S and Se) monolayers could be attributed to the great bond strength, large Young's modulus, relatively small atomic mass, high phonon group velocity, and long phonon relaxation time. In addition, the various scattering mechanisms are further considered in the calculations of phonon thermal transport to evaluate the effect of the scattering rates of the 2H-CrS2 and 2H-CrSe2 monolayers on the lattice thermal conductivity, and the determinative role is found for the phonon boundary scattering. Our present study would not only offer a fundamental understanding of the thermal transport properties of the 2H-CrX2 (X = S and Se) monolayers, but also provide theoretical guidelines for the experimental investigation of thermal management materials with 2H-phase.
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Affiliation(s)
- Shuwei Tang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
- Faculty of Chemistry, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Da Wan
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shulin Bai
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Shengkai Fu
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xinyu Wang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Xiaodong Li
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
| | - Jingyi Zhang
- College of Materials Science and Engineering, Liaoning Technical University, Zhonghua Road. #47, Fuxin, Liaoning, 123000, China.
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7
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Wang F, Hu F, Dai M, Zhu S, Sun F, Duan R, Wang C, Han J, Deng W, Chen W, Ye M, Han S, Qiang B, Jin Y, Chua Y, Chi N, Yu S, Nam D, Chae SH, Liu Z, Wang QJ. A two-dimensional mid-infrared optoelectronic retina enabling simultaneous perception and encoding. Nat Commun 2023; 14:1938. [PMID: 37024508 PMCID: PMC10079931 DOI: 10.1038/s41467-023-37623-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Accepted: 03/22/2023] [Indexed: 04/08/2023] Open
Abstract
Infrared machine vision system for object perception and recognition is becoming increasingly important in the Internet of Things era. However, the current system suffers from bulkiness and inefficiency as compared to the human retina with the intelligent and compact neural architecture. Here, we present a retina-inspired mid-infrared (MIR) optoelectronic device based on a two-dimensional (2D) heterostructure for simultaneous data perception and encoding. A single device can perceive the illumination intensity of a MIR stimulus signal, while encoding the intensity into a spike train based on a rate encoding algorithm for subsequent neuromorphic computing with the assistance of an all-optical excitation mechanism, a stochastic near-infrared (NIR) sampling terminal. The device features wide dynamic working range, high encoding precision, and flexible adaption ability to the MIR intensity. Moreover, an inference accuracy more than 96% to MIR MNIST data set encoded by the device is achieved using a trained spiking neural network (SNN).
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Affiliation(s)
- Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangchen Hu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai, 200433, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiayue Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenjie Deng
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yunda Chua
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Nan Chi
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai, 200433, China
| | - Shaohua Yu
- Peng Cheng Laboratory, Shenzhen, 518055, China
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sang Hoon Chae
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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8
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Ye F, Islam A, Wang Y, Guo J, Feng PXL. Phase Transition of MoTe 2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205327. [PMID: 36461691 DOI: 10.1002/smll.202205327] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Indexed: 06/17/2023]
Abstract
This work reports experimental demonstrations of reversible crystalline phase transition in ultrathin molybdenum ditelluride (MoTe2 ) controlled by thermal and mechanical mechanisms on the van der Waals (vdW) nanoelectromechanical systems (NEMS) platform, with hexagonal boron nitride encapsulated MoTe2 structure residing on top of graphene layer. Benefiting from very efficient electrothermal heating and straining effects in the suspended vdW heterostructures, MoTe2 phase transition is triggered by rising temperature and strain level. Raman spectroscopy monitors the MoTe2 crystalline phase signatures in situ and clearly records reversible phase transitions between hexagonal 2H (semiconducting) and monoclinic 1T' (metallic) phases. Combined with Raman thermometry, precisely measured nanomechanical resonances of the vdW devices enable the determination and monitoring of the strain variations as temperature is being regulated by electrothermal control. These results not only deepen the understanding of MoTe2 phase transition, but also demonstrate a novel platform for engineering MoTe2 phase transition and multiphysical devices.
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Affiliation(s)
- Fan Ye
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Arnob Islam
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Yanan Wang
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Jing Guo
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, FL 32611, USA
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9
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Marfoua B, Hong J. Electric field-induced switching of anomalous Nernst conductivity in the 2D MoTe 2/VSe 2 heterostructure. Phys Chem Chem Phys 2022; 24:22523-22530. [PMID: 36107022 DOI: 10.1039/d2cp03011j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Generation of a transverse electric current by a longitudinal charge or heat current is receiving extensive research efforts because of its potential applications in information-processing devices. Therefore, we investigated the electric field-dependent Curie temperature, anomalous Hall conductivity (AHC), and anomalous Nernst conductivity (ANC) of the 2H-MoTe2/1T-VSe2 heterostructure. The MoTe2/VSe2 heterostructure had a Curie temperature of 270 K and the Curie temperature was substantially increased to 355 K under an electric field. We obtained the electric field-induced switching of the AHC in the electron-doped system, whereas no switching was found in the hole-doped system. Also, the electric field-dependent ANC of the MoTe2/VSe2 heterostructure was investigated. The electric field-dependence of the ANC was more prominent in the electron-doped system. We obtained a large ANC of 2.3 A K-1 m-1 when the electric field was applied from VSe2 to MoTe2 layers and this was switched to -0.6 A K-1 m-1 with an opposite electric field. This finding may indicate that the 2D MoTe2/VSe2 heterostructure can be used for potential applications in energy conversion and spintronic devices.
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Affiliation(s)
- Brahim Marfoua
- Department of Physics, Pukyong National University, Busan 608-737, Korea.
| | - Jisang Hong
- Department of Physics, Pukyong National University, Busan 608-737, Korea.
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10
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Hader J, Neuhaus J, Moloney JV, Koch SW. On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:285601. [PMID: 35453129 DOI: 10.1088/1361-648x/ac699e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 04/22/2022] [Indexed: 06/14/2023]
Abstract
Anab initiobased fully microscopic many-body approach is used to study the carrier relaxation dynamics in monolayer transition-metal dichalcogenides. Bandstructures and wavefunctions as well as phonon energies and coupling matrix elements are calculated using density functional theory. The resulting dipole and Coulomb matrix elements are implemented in the Dirac-Bloch equations to calculate carrier-carrier and carrier-phonon scatterings throughout the whole Brillouin zone (BZ). It is shown that carrier scatterings lead to a relaxation into hot quasi-Fermi distributions on a single femtosecond timescale. Carrier cool down and inter-valley transitions are mediated by phonon scatterings on a picosecond timescale. Strong, density-dependent energy renormalizations are shown to be valley-dependent. For MoTe2, MoSe2and MoS2the change of energies with occupation is found to be about 50% stronger in the Σ and Λ side valleys than in theKandK' valleys. However, for realistic carrier densities, the materials always maintain their direct bandgap at theKpoints of the BZ.
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Affiliation(s)
- Jörg Hader
- Wyant College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721, United States of America
| | - Josefine Neuhaus
- Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof 5, 35032 Marburg, Germany
| | - Jerome V Moloney
- Wyant College of Optical Sciences, University of Arizona, 1630 E. University Blvd., Tucson, Arizona 85721, United States of America
| | - Stephan W Koch
- Department of Physics and Material Sciences Center, Philipps-University Marburg, Renthof 5, 35032 Marburg, Germany
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11
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Meng J, Lan Z, Lin W, Liang M, Zou X, Zhao Q, Geng H, Castelli IE, Canton SE, Pullerits T, Zheng K. Optimizing the quasi-equilibrium state of hot carriers in all-inorganic lead halide perovskite nanocrystals through Mn doping: fundamental dynamics and device perspectives. Chem Sci 2022; 13:1734-1745. [PMID: 35282633 PMCID: PMC8827087 DOI: 10.1039/d1sc05799e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Accepted: 01/10/2022] [Indexed: 11/21/2022] Open
Abstract
Hot carrier (HC) cooling accounts for the significant energy loss in lead halide perovskite (LHP) solar cells. Here, we study HC relaxation dynamics in Mn-doped LHP CsPbI3 nanocrystals (NCs), combining transient absorption spectroscopy and density functional theory (DFT) calculations. We demonstrate that Mn2+ doping (1) enlarges the longitudinal optical (LO)-acoustic phonon bandgap, (2) enhances the electron-LO phonon coupling strength, and (3) adds HC relaxation pathways via Mn orbitals within the bands. The spectroscopic study shows that the HC cooling process is decelerated after doping under band-edge excitation due to the dominant phonon bandgap enlargement. When the excitation photon energy is larger than the optical bandgap and the Mn2+ transition gap, the doping accelerates the cooling rate owing to the dominant effect of enhanced carrier-phonon coupling and relaxation pathways. We demonstrate that such a phenomenon is optimal for the application of hot carrier solar cells. The enhanced electron-LO phonon coupling and accelerated cooling of high-temperature hot carriers efficiently establish a high-temperature thermal quasi-equilibrium where the excessive energy of the hot carriers is transferred to heat the cold carriers. On the other hand, the enlarged phononic band-gap prevents further cooling of such a quasi-equilibrium, which facilitates the energy conversion process. Our results manifest a straightforward methodology to optimize the HC dynamics for hot carrier solar cells by element doping.
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Affiliation(s)
- Jie Meng
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Zhenyun Lan
- Department of Energy Conversion and Storage, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Weihua Lin
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Mingli Liang
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Xianshao Zou
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Qian Zhao
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Huifang Geng
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University Tianjin 300071 China
| | - Ivano E Castelli
- Department of Energy Conversion and Storage, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | | | - Tönu Pullerits
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Kaibo Zheng
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
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12
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Shen C, Wang L, Wei D, Zhang Y, Qin G, Chen XQ, Zhang H. Two-dimensional layered MSi 2N 4 (M = Mo, W) as promising thermal management materials: a comparative study. Phys Chem Chem Phys 2022; 24:3086-3093. [PMID: 35040847 DOI: 10.1039/d1cp03941e] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting their reliable operation. Two-dimensional (2D) materials, with high intrinsic thermal conductivity, good mechanical flexibility, and precisely controllable growth, are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we investigated the thermal conductivity of novel 2D layered MSi2N4 (M = Mo, W). Our results point to a competitive thermal conductivity as large as 162 W m-1 K-1 of monolayer MoSi2N4, which is around two times larger than that of WSi2N4 and seven times larger than that of monolayer MoS2 despite their similar non-planar structures. It is revealed that the high thermal conductivity arises mainly from its large group velocity and low anharmonicity. Our result suggests that MoSi2N4 could be a potential candidate for 2D thermal management materials.
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Affiliation(s)
- Chen Shen
- Institut für Materialwissenschaft, Technische Universität Darmstadt, 64287, Darmstadt, Germany
| | - Lei Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Donghai Wei
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yixuan Zhang
- Institut für Materialwissenschaft, Technische Universität Darmstadt, 64287, Darmstadt, Germany
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Xing-Qiu Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.,School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China
| | - Hongbin Zhang
- Institut für Materialwissenschaft, Technische Universität Darmstadt, 64287, Darmstadt, Germany
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13
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Han D, Yang X, Du M, Xin G, Zhang J, Wang X, Cheng L. Improved thermoelectric properties of WS 2-WSe 2 phononic crystals: insights from first-principles calculations. NANOSCALE 2021; 13:7176-7192. [PMID: 33889870 DOI: 10.1039/d0nr09169c] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, two-dimensional transition metal dichalcogenide (TMDC) monolayers have attracted much attention owing to their excellent physical properties. In the present study, we systematically investigate the thermoelectric properties of different WS2-WSe2 phononic crystals by utilizing first-principles calculations. First, the thermal properties of all phononic crystals with superlattices (SL1 and SL2) and their individual components (WS2 and WSe2) are evaluated, in which the lattice thermal conductivities (kph) of WS2 and WSe2 monolayers present isotropic behaviors, while the values of SL1 and SL2 monolayers reveal weak anisotropic behaviors. It can be observed that the kph values of WS2 and WSe2 monolayers are larger than those of SL1 and SL2 monolayers, which can be attributed to the decreasing phonon group velocity and phonon lifetime. Moreover, we calculate the electronic band structures of all monolayers, indicating that all monolayers are semiconductors. Afterwards, the electrical conductivities, the Seebeck coefficients, the power factors, the electronic thermal conductivities, and the ZT values at different temperatures are evaluated. The ZTmax values of WS2, WSe2, SL1, and SL2 monolayers with p-type doping are 0.43, 0.37, 0.95, and 0.66 at 1000 K. It can be proved that the SL1 monolayer possesses the largest ZT, which is at least two times higher than those of the WS2 and WSe2 monolayer. Finally, we build two kinds of phononic crystals with periodic holes (PCH1 and PCH2) and evaluate the thermoelectric properties. It can be observed that the PCH2 structure shows the best thermoelectric performance. The ZTmax values of the PCH2 structure can reach 2.53 and 4.54 with p-type doping along the x and y directions, which are 2.66 and 6.75 times higher than those of the SL1 monolayer. This work provides a new strategy to obtain higher thermoelectric performance and demonstrates the potential applications of phononic crystals in TMDC-based nanoelectronic devices.
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Affiliation(s)
- Dan Han
- Institute of Thermal Science and Technology, Shandong University, Jinan 250061, Shandong Province, China.
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14
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Pace S, Martini L, Convertino D, Keum DH, Forti S, Pezzini S, Fabbri F, Mišeikis V, Coletti C. Synthesis of Large-Scale Monolayer 1T'-MoTe 2 and Its Stabilization via Scalable hBN Encapsulation. ACS NANO 2021; 15:4213-4225. [PMID: 33605730 PMCID: PMC8023802 DOI: 10.1021/acsnano.0c05936] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Accepted: 02/02/2021] [Indexed: 06/02/2023]
Abstract
Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.
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Affiliation(s)
- Simona Pace
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Domenica Convertino
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Dong Hoon Keum
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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15
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Muhammad Z, Usman M, Ullah S, Zhang B, Lu Q, Zhu L, Hu R. Lattice dynamics, optical and thermal properties of quasi-two-dimensional anisotropic layered semimetal ZrTe 2. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00553g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this study, an investigation was conducted on the vibrational properties exhibited by 2D layered zirconium ditelluride by employing Raman spectroscopy and confirmed by DFT calculation.
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Affiliation(s)
- Zahir Muhammad
- Hefei Innovation Research Institute
- School of Microelectronics
- Beihang University
- Hefei
- P. R. China
| | - Muhammad Usman
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
- College of Physics Optoelectronic Engineering
- Shenzhen University
- Shenzhen 518060
- P.R. China
| | - Sami Ullah
- Shenyang National Laboratory for Materials Science
- Institute of Metal Research
- Chinese Academy of Sciences
- Shenyang 110016
- China
| | - Bo Zhang
- National Synchrotron Radiation Laboratory
- University of Science and Technology of China
- Hefei 230029
- China
| | - Qixiao Lu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
- College of Physics Optoelectronic Engineering
- Shenzhen University
- Shenzhen 518060
- P.R. China
| | - Ling Zhu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
- College of Physics Optoelectronic Engineering
- Shenzhen University
- Shenzhen 518060
- P.R. China
| | - Rui Hu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
- College of Physics Optoelectronic Engineering
- Shenzhen University
- Shenzhen 518060
- P.R. China
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16
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Vallinayagam M, Posselt M, Chandra S. Electronic structure and thermoelectric properties of Mo-based dichalcogenide monolayers locally and randomly modified by substitutional atoms. RSC Adv 2020; 10:43035-43044. [PMID: 35514882 PMCID: PMC9058219 DOI: 10.1039/d0ra08463h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2020] [Accepted: 11/18/2020] [Indexed: 12/02/2022] Open
Abstract
Density functional theory and Boltzmann transport equations are used to investigate electronic band structure and thermoelectric (TE) properties of different two-dimensional (2D) materials containing Mo, S, Nb, Se, and Te. In MoS2-based monolayers (MLs) the substitution of S atoms by Te atoms up to the concentration of 12.5 at% leads to a more significant change of the band structure than in the corresponding case with Se atoms. In particular, the bandgap is reduced. At a high concentration of Se or Te the electronic structure becomes more similar to that of the SeMoS or TeMoS Janus layers, and the MoSe2 or MoTe2 MLs. It is found that local and random introduction of substitutional Se or Te atoms yields not very different results. The substitution of Mo by Nb, at the concentration of 2.1 at% leads to hole levels. The thermoelectric properties of the considered 2D materials are quantified by the Seebeck coefficient and thermoelectric figure of merit. The two characteristics are determined for different levels of p- or n-doping of the MLs and for different temperatures. Compared to the pristine MoS2 ML, Te substitutional atoms cause more changes of the thermoelectric properties than Se atoms. However, MLs with Se substitutional atoms show a high thermoelectric figure of merit in a broader range of possible p- or n-doping levels. In most cases, the maximum thermoelectric figure of merit is about one, both in p- and n-type materials, and for temperatures between 300 and 1200 K. This is not only found for MoS2-based MLs with substitutional atoms but also for the Janus layers and for MoSe2 or MoTe2 MLs. Interestingly, for MLs with one Nb as well as two or four Te substitutional atoms the highest values of the TE figure of merit of 1.2 and 1.40, respectively, are obtained at a temperature of 1200 K. Controlling electronic and thermoelectric properties of MoS2 monolayers by changing concentration of Se and Te chalcogenide.![]()
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Affiliation(s)
- M Vallinayagam
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400 01328 Dresden Germany .,Technische Universität Dresden 01062 Dresden Germany
| | - M Posselt
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research Bautzner Landstraße 400 01328 Dresden Germany
| | - S Chandra
- Materials Science Group, Indira Gandhi Centre for Atomic Research, HBNI Kalpakkam 603102 Tamil Nadu India
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17
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Yan Y, Ding S, Wu X, Zhu J, Feng D, Yang X, Li F. Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering. RSC Adv 2020; 10:39455-39467. [PMID: 35515419 PMCID: PMC9057462 DOI: 10.1039/d0ra07288e] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2020] [Accepted: 10/13/2020] [Indexed: 01/05/2023] Open
Abstract
Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
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Affiliation(s)
- Yalan Yan
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Shuang Ding
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Xiaonan Wu
- Department of Chemical Engineering, Chengde Petroleum College Chengde 067000 People's Republic of China
| | - Jian Zhu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
| | - Dengman Feng
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
| | - Xiaodong Yang
- Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
| | - Fangfei Li
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University No. 2699 Qianjin Street Changchun 130012 People's Republic of China
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18
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Gupta R, Dongre B, Bera C, Carrete J. The Effect of Janus Asymmetry on Thermal Transport in SnSSe. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2020; 124:17476-17484. [PMID: 32904867 PMCID: PMC7461144 DOI: 10.1021/acs.jpcc.0c03414] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 06/28/2020] [Indexed: 06/11/2023]
Abstract
Several ternary "Janus" metal dichalcogenides such as {Mo,Zr,Pt}-SSe have emerged as candidates with significant potential for optoelectronic, piezoelectric, and thermoelectric applications. SnSSe, a natural option to explore as a thermoelectric given that its "parent" structures are SnS2 and SnSe2 has, however, only recently been shown to be mechanically stable. Here, we calculate the lattice thermal conductivities of the Janus SnSSe monolayer along with those of its parent dicalchogenides. The phonon frequencies of SnSSe are intermediate between those of SnSe2 and SnS2; however, its thermal conductivity is the lowest of the three and even lower than that of a random Sn[S0.5Se0.5]2 alloy. This can be attributed to the breakdown of inversion symmetry and manifests as a subtle effect beyond the reach of the relaxation-time approximation. Together with its low favorable power factor, its thermal conductivity confirms SnSSe as a good candidate for thermoelectric applications.
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Affiliation(s)
- Raveena Gupta
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
- Centre
for Nanoscience and Nanotechnology, Panjab
University, Sector-25, Chandigarh 160036, India
| | - Bonny Dongre
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
| | - Chandan Bera
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
| | - Jesús Carrete
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
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19
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The effect of non-analytical corrections on the phononic thermal transport in InX (X = S, Se, Te) monolayers. Sci Rep 2020; 10:1093. [PMID: 31974441 PMCID: PMC6978339 DOI: 10.1038/s41598-020-57644-0] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2019] [Accepted: 12/24/2019] [Indexed: 12/03/2022] Open
Abstract
We investigate the effect of non-analytical corrections on the phonon thermal transport properties in two-dimensional indium chalcogenide compounds. The longitudinal optical (LO) and transverse optical (TO) branches in the phonon dispersion are split near the Γ-point. The lattice thermal conductivity of monolayer InS is increased by 30.2% under non-analytical corrections because of the large LO-TO splitting at Γ-point. The predicted lattice thermal conductivities with non-analytical corrections at room temperature are 57.1 W/mK, 44.4 W/mK and 33.1 W/mK for the monolayer InS, InSe and InTe, respectively. The lattice thermal conductivity can be effectively reduced by nanostructures because the representative mean free paths are found very large in these monolayers. By quantifying the relative contribution of the phonon modes to the lattice thermal conductivity, we predict that the longitudinal acoustic branch is the main contributor to the lattice thermal conductivity. Due to the low lattice thermalconductivities of these monolayers, they can be useful in the nanoscale thermoelectric devices.
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20
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Chowdhury EH, Rahman MH, Bose P, Jayan R, Islam MM. Atomic-scale analysis of the physical strength and phonon transport mechanisms of monolayer β-bismuthene. Phys Chem Chem Phys 2020; 22:28238-28255. [PMID: 33295342 DOI: 10.1039/d0cp04785f] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
Bismuthene has opened up a new avenue in the field of nanotechnology because of its spectacular electronic and thermoelectric features. The strong spin-orbit-coupling enables its operation as the largest nontrivial bandgap topological insulator and quantum spin hall material at room temperature, which is unlikely for any other 2D material. It is also known to be the most promising thermoelectric material due to its remarkable thermoelectric properties, including a substantially high power factor. However, an in-depth understanding of the mechanical and thermal transport properties of bismuthene is crucial for its practical implementation and efficient operation. Employing the Stillinger-Weber potential, we utilized molecular dynamics simulations to inspect the mechanical strength and thermal conductivity of the monolayer β-bismuthene for the first time. We analyzed the effect of temperature on the tensile mechanical properties along the armchair and zigzag directions of bismuthene nanosheets and found that increasing temperature causes a significant deterioration in these properties. The material shows superior fracture resistance with zigzag loading, whereas the armchair direction exhibits an improved elasticity. Next, we showed that increasing vacancy concentration and crack length notably reduce the fracture stress and strain of β-bismuthene. Under all these conditions, β-bismuthene showed a strong chirality effect under tensile loading. We also explored the fracture phenomena of a pre-cracked β-bismuthene, which reveal that the armchair-directed crack possesses a higher fracture resistance than the zigzag-directed crack. Interestingly, branching phenomena occurred during crack propagation for the armchair crack; meanwhile, the crack propagates perpendicular to loading for the zigzag crack. Afterward, we investigated the effect of loading rate on the fracture properties of bismuthene along the armchair and zigzag directions. Finally, we calculated the thermal conductivity of bismuthene under the influence of temperature and vacancy and recorded a substantial decrement in thermal conductivity with increasing temperature and vacancy. The obtained results are comprehensively discussed in the light of phonon density of states, phonon dispersion spectrum, and phonon group velocities. It is also disclosed that the thermal conductivity of β-bismuthene is considerably lower than that of other analogous honeycomb structures. This study can add a new dimension to the successful realization of bismuthene in future (opto)electronic, spintronic, and thermoelectric devices.
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Affiliation(s)
- Emdadul Haque Chowdhury
- Department of Mechanical Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh
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21
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Chen X, Huang Y, Liu J, Yuan H, Chen H. Thermoelectric Performance of Two-Dimensional AlX (X = S, Se, Te): A First-Principles-Based Transport Study. ACS OMEGA 2019; 4:17773-17781. [PMID: 31681883 PMCID: PMC6822128 DOI: 10.1021/acsomega.9b02235] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2019] [Accepted: 10/02/2019] [Indexed: 06/01/2023]
Abstract
By using the first-principles calculations in combination with the Boltzmann transport theory, we systematically study the thermoelectric properties of AlX (X = S, Se, Te) monolayers as indirect gap semiconductors. The unique electronic density of states, which consists of a rather sharp peak at the valence band maxima and an almost constant band at the conduction band minima, makes AlX (X = S, Se, Te) monolayers excellent thermoelectric materials. The optimized power factors at room temperature are 22.59, 62.59, and 6.79 mW m-1 K-2 under reasonable electronic concentration for AlS, AlSe, and AlTe monolayers, respectively. The figure of merit (zT) increases with temperature and the optimized zT values of 0.52, 0.59, and 0.26 at room temperature are achieved under moderate electronic concentration for AlS, AlSe, and AlTe monolayers, respectively, indicating that two-dimensional layered AlX (X = S, Se, Te) semiconductors, especially AlSe, can be potential candidate matrices for high-performance thermoelectric nanocomposites.
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Affiliation(s)
- Xiaorui Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Yuhong Huang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Jing Liu
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Hongkuan Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Hong Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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22
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Wang Q, Han L, Wu L, Zhang T, Li S, Lu P. Strain Effect on Thermoelectric Performance of InSe Monolayer. NANOSCALE RESEARCH LETTERS 2019; 14:287. [PMID: 31428878 PMCID: PMC6702491 DOI: 10.1186/s11671-019-3113-9] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/10/2019] [Accepted: 08/01/2019] [Indexed: 06/10/2023]
Abstract
Strain engineering is a practical method to tune and improve the physical characteristics and properties of two-dimensional materials, due to their large stretchability. Tensile strain dependence of electronic, phonon, and thermoelectric properties of InSe monolayer are systematically studied. We demonstrate that the lattice thermal conductivity can be effectively modulated by applying tensile strain. Tensile strain can enhance anharmonic phonon scattering, giving rise to the enhanced phonon scattering rate, reduced phonon group velocity and heat capacity, and therefore lattice thermal conductivity decreases from 25.9 to 13.1 W/mK when the strain of 6% is applied. The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.
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Affiliation(s)
- Qian Wang
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 China
| | - Lihong Han
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 China
| | - Liyuan Wu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 China
| | - Tao Zhang
- College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, 610065 China
| | - Shanjun Li
- College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, 610065 China
| | - Pengfei Lu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876 China
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23
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Shafique A, Shin YH. Ultrahigh and anisotropic thermal transport in the hybridized monolayer (BC 2N) of boron nitride and graphene: a first-principles study. Phys Chem Chem Phys 2019; 21:17306-17313. [PMID: 31353375 DOI: 10.1039/c9cp02068c] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Heat removal has become a significant challenge in the miniaturization of electronic devices, especially in power electronics, so semiconducting materials with suitable band gaps and high lattice thermal conductivity are highly desired. Here, through first-principles calculations, we theoretically predict an ultra-high and anisotropic lattice thermal conductivity in monolayer BC2N. The predicted values of lattice thermal conductivity at room-temperature are 893.90 W m-1 K-1 and 1275.79 W m-1 K-1 along the armchair and zigzag directions, respectively. These values are probably the highest that have ever been reported for two-dimensional semiconducting materials. Such high lattice thermal conductivities are attributed to the high vibrational frequencies, large phonon group velocities, long phonon lifetime, low phonon anharmonicity, and strong bonding in monolayer BC2N. We also calculate the electrical and electronic thermal conductivities, which are also very high. Based on these theoretical findings, we expect monolayer BC2N to be an adequate candidate for thermal management in nanoelectronic devices.
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Affiliation(s)
- Aamir Shafique
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
| | - Young-Han Shin
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
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Guo SD, Guo XS, Han RY, Deng Y. Predicted Janus SnSSe monolayer: a comprehensive first-principles study. Phys Chem Chem Phys 2019; 21:24620-24628. [DOI: 10.1039/c9cp04590b] [Citation(s) in RCA: 87] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The dynamically and mechanically stable Janus SnSSe monolayer has distinctive electronic, optical, piezoelectric and transport properties.
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Affiliation(s)
- San-Dong Guo
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
| | - Xiao-Shu Guo
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
| | - Ru-Yue Han
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
| | - Ye Deng
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
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25
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Tan Y, Luo F, Zhu M, Xu X, Ye Y, Li B, Wang G, Luo W, Zheng X, Wu N, Yu Y, Qin S, Zhang XA. Controllable 2H-to-1T' phase transition in few-layer MoTe 2. NANOSCALE 2018; 10:19964-19971. [PMID: 30349910 DOI: 10.1039/c8nr06115g] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Most two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit more than one structural phase, leading to a number of remarkable physics and potential device applications beyond graphene. Here, we demonstrated a feasible route to trigger 2H-to-1T' phase transition in few-layer molybdenum ditelluride (MoTe2) by laser irradiation. The effects of laser power and irradiation duration were systematically studied in this study, revealing the accumulated heating effect as the main driving force for such a phase transition. By carefully adjusting laser power and irradiation time, we could control the structural phases of MoTe2 as 2H, 2H + 1T', and 1T'. After thermal annealing at a rather low temperature, the laser-irradiated MoTe2 showed a completely suppressed 2H component and a more stabilized 1T' phase, demonstrating that the microscopic origin of the irreversible 2H-to-1T' phase transition is the formation of Te vacancies in MoTe2 due to laser local instantaneous heating. Our findings together with the unique properties of MoTe2 pave the way for high-performance nanoelectronics and optoelectronics based on 2D TMDs and their heterostructures.
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Affiliation(s)
- Yuan Tan
- College of Arts and Science, National University of Defense Technology, Changsha, 410073, China.
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26
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Chen W, Hou X, Shi X, Pan H. Two-Dimensional Janus Transition Metal Oxides and Chalcogenides: Multifunctional Properties for Photocatalysts, Electronics, and Energy Conversion. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35289-35295. [PMID: 30238747 DOI: 10.1021/acsami.8b13248] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The fast development of high-performance devices for diverse applications requires nanoscale materials with multifunctional properties, motivating theoretical exploration into novel two-dimensional (2D) materials. In this work, we propose a new family of 2D nanomaterials, Janus transition metal oxides and chalcogenides MXY (M = Ti, Zr, or Hf; X = S or Se; Y = O or S; X ≠ Y) monolayers, for their versatile applications. We find that the Janus MXY monolayers are semiconductors with a wide range of band gaps ranging from 0.739 to 2.884 eV. We show that TiSO, ZrSO, and HfSO monolayers are promising candidates for photocatalysis because of their suitable band gaps and optimal redox potentials for water splitting, and ZrSeS and HfSeS monolayers are suitable candidates for nanoscale electronics because of their high carrier mobility. We further show that TiSO, ZrSO, and ZrSeO monolayers possess large piezoelectric properties because of the broken inversion symmetry stemmed from the different atomic sizes and electronegativities of the X and Y elements, which are better or comparable to other 2D and bulk piezoelectric materials. Our study demonstrates that the 2D Janus MXYs may find versatile applications into photocatalysts, electronics, sensors, and energy harvesting/conversion.
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Affiliation(s)
- Wenzhou Chen
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering , University of Macau , Macao SAR , China
| | - Xianhua Hou
- School of Physics and Telecommunication Engineering , South China Normal University , Guangzhou 510006 , P. R. China
| | - Xingqiang Shi
- Department of Physics , Southern University of Science and Technology , Shenzhen 518055 , China
| | - Hui Pan
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering , University of Macau , Macao SAR , China
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Guo SD, Dong J, Liu JT. Nonmonotonic strain dependence of lattice thermal conductivity in monolayer SiC: a first-principles study. Phys Chem Chem Phys 2018; 20:22038-22046. [DOI: 10.1039/c8cp02006j] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The lattice thermal conductivities (200, 250, 300 and 400 K) of a SiC monolayer versus strain, showing nonmonotonic strain dependence.
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Affiliation(s)
- San-Dong Guo
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
| | - Jun Dong
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
| | - Jiang-Tao Liu
- School of Physics
- China University of Mining and Technology
- Xuzhou 221116
- China
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28
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Taheri A, Da Silva C, Amon CH. Effects of biaxial tensile strain on the first-principles-driven thermal conductivity of buckled arsenene and phosphorene. Phys Chem Chem Phys 2018; 20:27611-27620. [DOI: 10.1039/c8cp05342a] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
A first-principles study is conducted to investigate the effect of biaxial tensile strain on phonon properties and thermal conductivity of buckled phosphorene and arsenene, novel two-dimensional (2D) materials of group-VA.
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Affiliation(s)
- Armin Taheri
- Department of Mechanical and Industrial Engineering
- University of Toronto
- Ontario
- Canada
| | - Carlos Da Silva
- Department of Mechanical and Industrial Engineering
- University of Toronto
- Ontario
- Canada
| | - Cristina H. Amon
- Department of Mechanical and Industrial Engineering
- University of Toronto
- Ontario
- Canada
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29
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Guo SD. Phonon transport in Janus monolayer MoSSe: a first-principles study. Phys Chem Chem Phys 2018; 20:7236-7242. [DOI: 10.1039/c8cp00350e] [Citation(s) in RCA: 106] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
First principles investigation of the phonon transport and lattice thermal conductivity (κL) in MoSSe, MoS2 and MoSe2 monolayers.
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Affiliation(s)
- San-Dong Guo
- School of Electronic Engineering
- Xi'an University of Posts and Telecommunications
- Xi'an 710121
- China
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