Controllable 2H-to-1T' phase transition in few-layer MoTe2

Light-Induced Polaronic Crystals in Single-Layer Transition Metal Dichalcogenides

Light-induced ordered states can emerge in materials after irradiation with ultrafast laser pulses. However, their prediction is challenging because the inverted band occupation confounds our chemical intuition. Hence, we use a recently developed constrained density functional perturbation theory approach to systematically screen single-layer transition metal dichalcogenides (TMDs) for light-induced ordered states. We demonstrate that all examined single-layer TMDs reveal similar light-induced charge orderings. The corresponding reconstructions are periodic arrangements of polarons (polaronic crystals), characterized by triangular metal clusters and having no equivalent at equilibrium conditions. The polarons are accompanied by localized midgap states in the electronic band structure, detectable by experimental methods. We assess the selenides as the most promising candidates for potential photoexcitation experiments because they transition at low critical fluences, have low transition barriers, and maintain an open band gap under photoexcitation. Our work paves the way for innovative material design approaches targeting light-induced phases.

Locally Phase-Engineered MoTe2 for Near-Infrared Photodetectors

Transition-metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus, far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe2 optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T'-2H junction, with a maximum at the 2H MoTe2 side of the junction. This observation, together with the nonlinear IV-curve, indicates that the photovoltaic effect plays a major role in the photon-to-charge current conversion in these systems. Additionally, the 1T'-2H MoTe2 heterojunction device exhibits a fast optoelectronic response over a wavelength range of 700-1100 nm, with a rise and fall times of 113 and 110 μs, respectively, 2 orders of magnitude faster when compared to a directly contacted 2H MoTe2 device. These results show the potential of local phase-engineering for all-2D optoelectronic circuitry.

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

Effective concentration ratio driven phase engineering of MBE-grown few-layer MoTe2

The polymorphic nature of ultrathin transition metal dichalcogenide (TMDC) materials makes the phase engineering of these materials an interesting field of investigation. Understanding the phase-controlling behavior of different growth parameters is crucial for obtaining large-area growth of a desirable phase. Here, we report a detailed study on the effect of growth parameters for engineering different phases of few-layer MoTe2 on sapphire using molecular beam epitaxy (MBE). Our study shows that the 2H phase of MoTe2 is stabilized in a certain regime of the flux ratio and growth temperature, while on both the lower, as well as, the higher sides of this regime, the 1T' phase is favored. The combined effect of growth parameters is explained using the effective concentration ratio of Te and Mo at the growth surface, which is found to be the primary factor governing the phase selectivity in few-layer MoTe2. XPS and KPFM investigations show the contribution of excess carrier doping in driving the phase change. The effect of the sapphire substrate on the crystallinity and phase-dependent morphological features has also been studied. This knowledge of versatile and controlled phase engineering of few-layer MoTe2 paves the way for fabricating large-scale hetero-phase-based metal-semiconductor heterostructures for future electronic and optoelectronic device applications.

Ultrafast Laser Processing of 2D Materials: Novel Routes to Advanced Devices

Ultrafast laser processing has emerged as a versatile technique for modifying materials and introducing novel functionalities. Over the past decade, this method has demonstrated remarkable advantages in the manipulation of 2D layered materials, including synthesis, structuring, functionalization, and local patterning. Unlike continuous-wave and long-pulsed optical methods, ultrafast lasers offer a solution for thermal heating issues. Nonlinear interactions between ultrafast laser pulses and the atomic lattice of 2D materials substantially influence their chemical and physical properties. This paper highlights the transformative role of ultrafast laser pulses in maskless green technology, enabling subtractive, and additive processes that unveil ways for advanced devices. Utilizing the synergetic effect between the energy states within the atomic layers and ultrafast laser irradiation, it is feasible to achieve unprecedented resolutions down to several nanometers. Recent advancements are discussed in functionalization, doping, atomic reconstruction, phase transformation, and 2D and 3D micro- and nanopatterning. A forward-looking perspective on a wide array of applications of 2D materials, along with device fabrication featuring novel physical and chemical properties through direct ultrafast laser writing, is also provided.

Spatially Controlled Phase Transition in MoTe2 Driven by Focused Ion Beam Irradiations

Phase transitions play an important role in tuning the physical properties of two-dimensional (2D) materials as well as developing their high-performance device applications. Here, we reported the observation of a phase transition in few-layered MoTe2 flakes by the irradiation of gallium (Ga+) ions using a focused ion beam (FIB) system. The semiconducting 2H phase of MoTe2 can be controllably converted to the metallic 1T'-like phase via Te defect engineering during irradiations. By taking advantage of the nanometer-sized Ga+ ion probe proved by FIB, in-plane 1T'-2H homojunctions of MoTe2 at submicrometer scale can be fabricated. Furthermore, we demonstrate the improvement of device performance (on-state current over 2 orders of magnitude higher) in MoTe2 transistors using the patterned 1T'-like phase regions as contact electrodes. Our study provides a new strategy to drive the phase transitions in MoTe2, tune their properties, and develop high-performance devices, which also extends the applications of FIB technology in 2D materials and their devices.

Temperature-dependent failure of atomically thin MoTe2

CONTEXT

In this study, we investigated the mechanical responses of molybdenum ditelluride (MoTe2) using molecular dynamics (MD) simulations. Our key focus was on the tensile behavior of MoTe2 with trigonal prismatic phase (2H-MoTe2) which was investigated under uniaxial tensile stress for both armchair and zigzag directions. Crack formation and propagation were examined to understand the fracture behavior of such material for varying temperatures. Additionally, the study also assesses the impact of temperature on Young's modulus and fracture stress-strain of a monolayer of 2H-MoTe2.

METHOD

The investigation was done using molecular dynamics (MD) simulations using Stillinger-Weber (SW) potentials. The tensile behavior was simulated for temperature for 10 K and then from 100 to 600 K with a 100-K interval. The crack propagation and formation of 10 K and 300 K 2H-MoTe2 for both directions at different strain rates was analyzed using Ovito visualizer. All the simulations were conducted using a strain rate of 10-4 ps-1. The results show that the fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 10 K is 16.33 GPa (11.43 N/m) and 13.71429 GPa (9.46 N/m) under a 24% and 18% fracture strain, respectively. The fracture strength of 2H-MoTe2 in the armchair and zigzag direction at 600 K is 10.81 GPa (7.56 N/m) and 10.13 GPa (7.09 N/m) under a 12.5% and 12.47% fracture strain, respectively.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

2D nanocomposite materials for HER electrocatalysts - a review

Hydrogen energy has the potential to be a cost-effective and strong technology for brighter development. Hydrogen fuel production by water electrolyzers has attracted attention. 2D nanocomposites with distinctive properties have been extensively explored for various applications from hydrogen evolution reactions to improving the efficiency of water electrolyzer, which is the most eco-friendly, and high-performance for hydrogen production. Recently, typical 2D nanocomposites such as Metal-Free 2D, TMDs, Mxene, LDH, organic composites, and Heterostructure have recently been thoroughly researched for use in the HER. We discuss effective ways for increasing the HER efficiency of 2D catalysts in this paper, And the unique advantages and mechanisms for specific applications are highlighted. Several essential regulating strategies for developing 2D nanocomposite-based HER electrocatalysts are included such as interface engineering, defect engineering, heteroatom doping, strain & phase engineering, and hybridizing which improve HER kinetics, the electrical conductivity, accessibility to catalytic active sites, and reaction energy barrier can be optimized. Finally, the future prospects for 2D nanocomposites in HER are discussed, as well as a thorough overview of a variety of methodologies for designing 2D nanocomposites as HER electrocatalysts with excellent catalytic performance. We expect that this review will provide a thorough overview of 2D nanocatalysts for hydrogen production.

Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe2) under Uniaxial Elastic Strain

Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.

Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.

Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Femtosecond Laser-Driven Phase Engineering of WS2 for Nano-Periodic Phase Patterning and Sub-ppm Ammonia Gas Sensing

Laser-driven phase transition of 2D transition metal dichalcogenides has attracted much attention due to its high flexibility and rapidity. However, there are some limitations during the laser irradiation process, especially the unsatisfied surface ablation, the inability of nanoscale phase patterning, and the unexploited physical properties of new phase. In this work, the well-controlled femtosecond (fs) laser-driven transformation from the metallic 2M-WS2 to the semiconducting 2H-WS2 is reported, which is confirmed to be a single-crystal to single-crystal transition without layer thinning or obvious ablation. Moreover, a highly ordered 2H/2M nano-periodic phase transition with a resolution of ≈435 nm is achieved, breaking through the existing size bottleneck of laser-driven phase transition, which is attributed to the selective deposition of plasmon energy induced by fs laser. It is also demonstrated that the achieved 2H-WS2 after laser irradiation contains rich sulfur vacancies, which exhibits highly competitive ammonia gas sensing performance, with a detection limit below 0.1 ppm and a fast response/recovery time of 43/67 s at room temperature. This study provides a new strategy for the preparation of the phase-selective transition homojunction and high-performance applications in electronics.

Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2

In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe2, caused by the phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 to 63 meV during phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semimetallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 μA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30%, respectively. Our findings are distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials and a cutting-edge approach to optimize the efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.

Intrinsic 1[Formula: see text] phase induced in atomically thin 2H-MoTe2 by a single terahertz pulse

The polymorphic transition from 2H to 1[Formula: see text]-MoTe2, which was thought to be induced by high-energy photon irradiation among many other means, has been intensely studied for its technological relevance in nanoscale transistors due to the remarkable improvement in electrical performance. However, it remains controversial whether a crystalline 1[Formula: see text] phase is produced because optical signatures of this putative transition are found to be associated with the formation of tellurium clusters instead. Here we demonstrate the creation of an intrinsic 1[Formula: see text] lattice after irradiating a mono- or few-layer 2H-MoTe2 with a single field-enhanced terahertz pulse. Unlike optical pulses, the low terahertz photon energy limits possible structural damages. We further develop a single-shot terahertz-pump-second-harmonic-probe technique and reveal a transition out of the 2H-phase within 10 ns after photoexcitation. Our results not only provide important insights to resolve the long-standing debate over the light-induced polymorphic transition in MoTe2 but also highlight the unique capability of strong-field terahertz pulses in manipulating quantum materials.

An open database of computed bulk ternary transition metal dichalcogenides

We present a dataset of structural relaxations of bulk ternary transition metal dichalcogenides (TMDs) computed via plane-wave density functional theory (DFT). We examined combinations of up to two chalcogenides with seven transition metals from groups 4-6 in octahedral (1T) or trigonal prismatic (2H) coordination. The full dataset consists of 672 unique stoichiometries, with a total of 50,337 individual configurations generated during structural relaxation. Our motivations for building this dataset are (1) to develop a training set for the generation of machine and deep learning models and (2) to obtain structural minima over a range of stoichiometries to support future electronic analyses. We provide the dataset as individual VASP xml files as well as all configurations encountered during relaxations collated into an ASE database with the corresponding total energy and atomic forces. In this report, we discuss the dataset in more detail and highlight interesting structural and electronic features of the relaxed structures.

Laser doping of 2D material for precise energy band design

The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe₂). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe₂ indicates good controllability of the method for the carrier concentration distribution in MoTe₂. Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials.

Gate and Temperature Driven Phase Transitions in Few-Layer MoTe2

MoTe₂ has a stable hexagonal semiconducting phase (2H) as well as two semimetallic phases with monoclinic (1T') and orthorhombic (T_d) structures. A structural change can thus be accompanied by a significant change in electronic transport properties. The two semimetallic phases are connected by a temperature driven transition and could exhibit topological properties. Here we make extensive Raman measurements as a function of layer thickness, temperature, and electrostatic doping on few layer 2H-MoTe₂ and also on 1T'-MoTe₂ and T_d-WTe₂. Recent work in MoTe₂ has raised the possibility of a 2H-1T' transition through technology compatible pathways. It has been claimed that such a transition, of promise for device applications, is activated by electrostatic gating. We investigate this claim and find that few-layer tellurides are characterized by high mobility of Te ions, even in ambient conditions and especially through the variation of external parameters like electric field or temperature. These can generate Te clusters, vacancies at crystalline sites, and facilitate structural transitions. We however find that the purported 2H-1T' transition in MoTe₂ cannot be obtained by a pure electrostatic field.

Laser-Induced Phase Transition and Patterning of hBN-Encapsulated MoTe2

Transition metal dichalcogenides exhibit phase transitions through atomic migration when triggered by various stimuli, such as strain, doping, and annealing. However, since atomically thin 2D materials are easily damaged and evaporated from these strategies, studies on the crystal structure and composition of transformed 2D phases are limited. Here, the phase and composition change behavior of laser-irradiated molybdenum ditelluride (MoTe₂ ) in various stacked geometry are investigated, and the stable laser-induced phase patterning in hexagonal boron nitride (hBN)-encapsulated MoTe₂ is demonstrated. When air-exposed or single-side passivated 2H-MoTe₂ are irradiated by a laser, MoTe₂ is transformed into Te or Mo₃ Te₄ due to the highly accumulated heat and atomic evaporation. Conversely, hBN-encapsulated 2H-MoTe₂ transformed into a 1T' phase without evaporation or structural degradation, enabling stable phase transitions in desired regions. The laser-induced phase transition shows layer number dependence; thinner MoTe₂ has a higher phase transition temperature. From the stable phase patterning method, the low contact resistivity of 1.13 kΩ µm in 2H-MoTe₂ field-effect transistors with 1T' contacts from the seamless heterophase junction geometry is achieved. This study paves an effective way to fabricate monolithic 2D electronic devices with laterally stitched phases and provides insights into phase and compositional changes in 2D materials.

Reconfigurable terahertz light harvesting with MoTe2 hybrid metasurface

Near-perfect light harvesting of a metasurface-based absorber paves the way for achieving numerous potential applications in sensing, cloaking, and photovoltaics. Here, we present a reconfigurable perfect absorber based on a molybdenum ditelluride (MoTe₂) hybrid metasurface at terahertz (THz) frequency. By investigating the optical response of metasurface-based absorbers, a reconfigurable switching of dual-frequency perfect absorption to a new single-frequency absorption takes place when light illuminates MoTe₂. Moreover, the absorption mechanism of the hybrid metasurface is well demonstrated with the analytical coupled-dipole model and impedance analysis. The proposed reconfigurable THz meta-absorber provides a new, to the best of our knowledge, route for active radar stealth, frequency-selective detection, and next-generation wireless communication.

Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems

This work reports experimental demonstrations of reversible crystalline phase transition in ultrathin molybdenum ditelluride (MoTe₂ ) controlled by thermal and mechanical mechanisms on the van der Waals (vdW) nanoelectromechanical systems (NEMS) platform, with hexagonal boron nitride encapsulated MoTe₂ structure residing on top of graphene layer. Benefiting from very efficient electrothermal heating and straining effects in the suspended vdW heterostructures, MoTe₂ phase transition is triggered by rising temperature and strain level. Raman spectroscopy monitors the MoTe₂ crystalline phase signatures in situ and clearly records reversible phase transitions between hexagonal 2H (semiconducting) and monoclinic 1T' (metallic) phases. Combined with Raman thermometry, precisely measured nanomechanical resonances of the vdW devices enable the determination and monitoring of the strain variations as temperature is being regulated by electrothermal control. These results not only deepen the understanding of MoTe₂ phase transition, but also demonstrate a novel platform for engineering MoTe₂ phase transition and multiphysical devices.

In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe₂) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-T_d interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe₂ with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the T_d-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 °C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-T_d-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D heterophase devices with atomically sharp and coherent interfaces.

Polygonal gold nanocrystal induced efficient phase transition in 2D-MoS2for enhancing photo-electrocatalytic hydrogen generation

Plasmonic nanocrystals (NCs) assisted phase transition of two-dimensional molybdenum disulfide (2D-MoS₂) unlashes numerous opportunities in the fields of energy harvesting via electrocatalysis and photoelectrocatalysis by enhancing electronic conductivity, increasing catalytic active sites, lowering Gibbs free energy for hydrogen adsorption and desorption, etc. Here, we report the synthesis of faceted gold pentagonal bi-pyramidal (Au-PBP) nanocrystals (NC) for efficient plasmon-induced phase transition (from 2 H to 1 T phase) in chemical vapor deposited 2D-MoS₂. The as-developed Au-PBP NC with the increased number of corners and edges showed an enhanced multi-modal plasmonic effect under light irradiations. The overpotential of hydrogen evolution reaction (HER) was reduced by 61 mV, whereas the Tafel slope decreased by 23.7 mV/dec on photoexcitation of the Au-PBP@MoS₂hybrid catalyst. The enhanced performance can be attributed to the light-induced 2H to 1 T phase transition of 2D-MoS₂, increased active sites, reduced Gibbs free energy, efficient charge separation, change in surface potential, and improved electrical conductivity of 2D-MoS₂film. From density functional theory (DFT) calculations, we obtain a significant change in the electronic properties of 2D-MoS₂(i.e. work function, surface chemical potential, and the density of states), which was primarily due to the plasmonic interactions and exchange-interactions between the Au-PBP nanocrystals and monolayer 2D-MoS₂, thereby enhancing the phase transition and improving the surface properties. This work would lay out finding assorted routes to explore more complex nanocrystals-based multipolar plasmonic NC to escalate the HER activity of 2D-MoS₂and other 2D transition metal dichalcogenides.

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Two-dimensional (2D) molybdenum telluride (MoTe2) is attracting increasing attention for its potential applications in electronic, optoelectronic, photonic and catalytic fields, owing to the unique band structures of both stable 2H phase and 1T′ phase. However, the direct growth of high-quality atomically thin MoTe2 with the controllable proportion of 2H and 1T′ phase seems hard due to easy phase transformation since the potential barrier between the two phases is extremely small. Herein, we report a strategy of the phase-controllable chemical vapor deposition (CVD) synthesis for few-layer (<3 layer) MoTe2. Besides, a new understanding of the phase-controllable growth mechanism is presented based on a combination of experimental results and DFT calculations. The lattice distortion caused by Te vacancies or structural strain might make 1T′-MoTe2 more stable. The conditions for 2H to 1T′ phase conversion are determined to be the following: Te monovacancies exceeding 4% or Te divacancies exceeding 8%, or lattice strain beyond 6%. In contrast, sufficient Te supply and appropriate tellurization velocity are essential to obtaining the prevailing 2H-MoTe2. Our work provides a novel perspective on the preparation of 2D transition metal chalcogenides (TMDs) with the controllable proportion of 2H and 1T′ phase and paves the way to their subsequent potential application of these hybrid phases.

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe₂, which can be changed to n-type by charging a hexagonal boron nitride (h-BN) substrate through the application of a writing voltage using a metal gate under deep ultraviolet light. The n-type part of MoTe₂ can be obtained locally using the metal gate pattern, whereas the other parts remain p-type. Furthermore, we can control the transition rate to n-type by applying a different writing voltage (i.e., − 2 to − 10 V), where the n-type characteristics become saturated beyond a certain writing voltage. Thus, MoTe₂ was electrostatically doped by a charged h-BN substrate, and it was found that a thicker h-BN substrate was more efficiently photocharged than a thinner one. We also fabricated a p–n diode using a 0.8 nm-thick MoTe₂ flake on a 167 nm-thick h-BN substrate, which showed a high rectification ratio of ~ 10⁻⁴. Our observations pave the way for expanding the application of TMD-based FETs to diode rectification devices, along with optoelectronic applications.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Engineering van der Waals Materials for Advanced Metaphotonics

The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.

Unveiling the Electrocatalytic Activity of 1T'-MoSe2 on Lithium-Polysulfide Conversion Reactions

The dissolution of intermediate lithium polysulfides (LiPS) into an electrolyte and their shuttling between the electrodes have been the primary bottlenecks for the commercialization of high-energy density lithium-sulfur (Li-S) batteries. While several two-dimensional (2D) materials have been deployed in recent years to mitigate these issues, their activity is strictly restricted to their edge-plane-based active sites. Herein, for the first time, we have explored a phase transformation phenomenon in a 2D material to enhance the number of active sites and electrocatalytic activity toward LiPS redox reactions. Detailed theoretical calculations demonstrate that phase transformation from the 2H to 1T' phase in a MoSe₂ material activates the basal planes that allow for LiPS adsorption. The corresponding transformation mechanism and LiPS adsorption capabilities of the as-formed 1T'-MoSe₂ were elucidated experimentally using microscopic and spectroscopic techniques. Further, the electrochemical evaluation of phase-transformed MoSe₂ revealed its strong electrocatalytic activity toward LiPS reduction and their oxidation reactions. The 1T'-MoSe₂-based cathode hosts for sulfur later provide a superior cycling performance of over 250 cycles with a capacity loss of only 0.15% per cycle along with an excellent Coulombic efficiency of 99.6%.

Optical Modification of 2D Materials: Methods and Applications

2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and cost-ineffective. Optical modification is demonstrated as an effective and scalable method for accurate and local in situ engineering and patterning of 2D materials in ambient conditions. This review focuses on the state of the art of optical modification of 2D materials and their applications. Perspectives for future developments in this field are also discussed, including novel laser tools, new optical modification strategies, and their emerging applications in quantum technologies and biotechnologies.

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors

Direct atomic-scale observation of the local phase transition in transition metal dichalcogenides (TMDCs) is critically required to carry out in-depth studies of their atomic structures and electronic features. However, the structural aspects including crystal symmetries tend to be unclear and unintuitive in real-time monitoring of the phase transition process. Herein, by using in situ transmission electron microscopy, information about the phase transition mechanism of MoTe₂ from hexagonal structure (2H phase) to monoclinic structure (1T' phase) driven by sublimation of Te atoms after a spike annealing is obtained directly. Furthermore, with the control of Te atom sublimation by modulating the hexagonal boron nitride (h-BN) coverage in the desired area, the lateral 1T'-enriched MoTe₂ /2H MoTe₂ homojunction can be one-step constructed via an annealing treatment. Owing to the gradient bandgap provided by 1T'-enriched MoTe₂ and 2H MoTe₂ , the photodetector composed of the 1T'-enriched MoTe₂ /2H MoTe₂ homojunction shows fast photoresponse and ten times larger photocurrents than that consisting of a pure 2H MoTe₂ channel. The study reveals a route to improve the performance of optoelectronic and electronic devices based on TMDCs with both semiconducting and semimetallic phases.

Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET

A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p- and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors.

Ultrafast and stable phase transition realized in MoTe2-based memristive devices

Phase engineering of two-dimensional transition metal dichalcogenides has received increasing attention in recent years due to its atomically thin nature and polymorphism. Here, we first realize an electric-field-induced controllable phase transition between semiconducting 2H and metallic 1T' phases in MoTe₂ memristive devices. The device performs stable bipolar resistive switching with a cycling endurance of over 10⁵, an excellent retention characteristic of over 10⁵ s at an elevated temperature of 85 °C and an ultrafast switching of ∼5 ns for SET and ∼10 ns for RESET. More importantly, the device works in different atmospheres including air, vacuum and oxygen, and even works with no degradation after being placed in air for one year, indicating excellent surrounding and time stability. In situ Raman analysis reveals that the stable resistive switching originates from a controllable phase transition between 2H and 1T' phases. Density functional theory calculations reveal that the Te vacancy facilitates the phase transition in MoTe₂ through decreasing the barrier between 2H and 1T' phases, and serving as nucleation sites due to the elimination of repulsive forces. This electric-field-induced controllable phase transition in MoTe₂ devices offers new opportunities for developing reliable and ultrafast phase transition devices based on atomically thin membranes.

Photo-induced lattice distortion in 2H-MoTe2 probed by time-resolved core level photoemission

The technological interest in MoTe2 as a phase engineered material is related to the possibility of triggering the 2H-1T’ phase transition by optical excitation, potentially allowing for an accurate patterning...

Recent Progress in Two-Dimensional MoTe2 Hetero-Phase Homojunctions

With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe₂ exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe₂ thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe₂ hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe₂, demonstrate the approaches to the construction of 2D MoTe₂ hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.

Toward understanding the phase-selective growth mechanism of films and geometrically-shaped flakes of 2D MoTe2

Two-dimensional (2D) molybdenum ditelluride (MoTe₂) is an interesting material for fundamental study and applications, due to its ability to exist in different polymorphs of 2H, 1T, and 1T′, their phase change behavior, and unique electronic properties. Although much progress has been made in the growth of high-quality flakes and films of 2H and 1T′-MoTe₂ phases, phase-selective growth of all three phases remains a huge challenge, due to the lack of enough information on their growth mechanism. Herein, we present a novel approach to growing films and geometrical-shaped few-layer flakes of 2D 2H-, 1T-, and 1T′-MoTe₂ by atmospheric-pressure chemical vapor deposition (APCVD) and present a thorough understanding of the phase-selective growth mechanism by employing the concept of thermodynamics and chemical kinetics involved in the growth processes. Our approach involves optimization of growth parameters and understanding using thermodynamical software, HSC Chemistry. A lattice strain-mediated mechanism has been proposed to explain the phase selective growth of 2D MoTe₂, and different chemical kinetics-guided strategies have been developed to grow MoTe₂ flakes and films.

This study investigates the phase-controlled growth of flakes and films of 2D MoTe₂ by atmospheric-pressure chemical vapor deposition and presents a thorough understanding on the growth mechanism.

Photocarrier Dynamics in MoTe2 Nanofilms with 2H and Distorted 1T Lattice Structures

Molybdenum telluride (MoTe₂), an emerging layered two-dimensional (2D) material, possesses excellent phase-changing properties. Previous studies revealed its reversible transition between 2H and 1T' phases with a transition energy as small as 35 meV. Since 1T'-MoTe₂ is metallic, it can serve as an electrical contact for semiconducting 2H-MoTe₂-based optoelectronic devices. Here, the photocarrier dynamics in MoTe₂ nanofilms synthesized by a one-step method and with coexisting multiple phases are investigated by transient absorption measurements. Both the energy relaxation time and the recombination lifetime of the excitons are shorter in the 1T'-MoTe₂ compared to its 2H phase. These results provide information on the different photocarrier dynamical properties of these two phases, which is important for future 2D optoelectronic and phase-change electronic devices based on MoTe₂.

MoTe2: Semiconductor or Semimetal?

Transition metal tellurides (TMTs) have attracted intense interest due to their intriguing physical properties arising from their diverse phase topologies. To date, a wide range of physical properties have been discovered for TMTs, including that they can act as topological insulators, semiconductors, Weyl semimetals, and superconductors. Among the TMT families, MoTe₂ is a representative material because of its Janus nature and rich phases. In this Perspective, we first introduce phase structures in monolayer and bulk MoTe₂ and then summarize MoTe₂ synthesis strategies. We highlight recent advances of Janus MoTe₂ in terms of material structures and emerging quantum states. We also provide insight into the opportunities and challenges faced by MoTe₂-associated device design and applications.

Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases

The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.

Direct Visualization and Manipulation of Stacking Orders in Few-Layer Graphene by Dynamic Atomic Force Microscopy

Stacking order plays a central role in governing a wide range of properties in layered two-dimensional materials. In the case of few-layer graphene, there are two common stacking configurations: ABA and ABC stacking, which have been proven to exhibit dramatically different electronic properties. However, the controllable characterization and manipulation between them remain a great challenge. Here, we report that ABA- and ABC-stacked domains can be directly visualized in phase imaging by tapping-mode atomic force microscopy with much higher spatial resolution than conventional optical spectroscopy. The contrasting phase is caused by the different energy dissipation by the tip-sample interaction. We further demonstrate controllable manipulation on the ABA/ABC domain walls by means of propagating stress transverse waves generated by the tapping of tip. Our results offer a reliable strategy for direct imaging and precise control of the atomic structures in few-layer graphene, which can be extended to other two-dimensional materials.

Artificial Neuron and Synapse Devices Based on 2D Materials

Neuromorphic systems, which emulate neural functionalities of a human brain, are considered to be an attractive next-generation computing approach, with advantages of high energy efficiency and fast computing speed. After these neuromorphic systems are proposed, it is demonstrated that artificial synapses and neurons can mimic neural functions of biological synapses and neurons. However, since the neuromorphic functionalities are highly related to the surface properties of materials, bulk material-based neuromorphic devices suffer from uncontrollable defects at surfaces and strong scattering caused by dangling bonds. Therefore, 2D materials which have dangling-bond-free surfaces and excellent crystallinity have emerged as promising candidates for neuromorphic computing hardware. First, the fundamental synaptic behavior is reviewed, such as synaptic plasticity and learning rule, and requirements of artificial synapses to emulate biological synapses. In addition, an overview of recent advances on 2D materials-based synaptic devices is summarized by categorizing these into various working principles of artificial synapses. Second, the compulsory behavior and requirements of artificial neurons such as the all-or-nothing law and refractory periods to simulate a spike neural network are described, and the implementation of 2D materials-based artificial neurons to date is reviewed. Finally, future challenges and outlooks of 2D materials-based neuromorphic devices are discussed.

Phase Transitions and Water Splitting Applications of 2D Transition Metal Dichalcogenides and Metal Phosphorous Trichalcogenides

2D layered materials turn out to be the most attractive hotspot in materials for their unique physical and chemical properties. A special class of 2D layered material refers to materials exhibiting phase transition based on environment variables. Among these materials, transition metal dichalcogenides (TMDs) act as a promising alternative for their unique combination of atomic-scale thickness, direct bandgap, significant spin-orbit coupling and prominent electronic and mechanical properties, enabling them to be applied for fundamental studies as catalyst materials. Metal phosphorous trichalcogenides (MPTs), as another potential catalytic 2D phase transition material, have been employed for their unusual intercalation behavior and electrochemical properties, which act as a secondary electrode in lithium batteries. The preparation of 2D TMD and MPT materials has been extensively conducted by engineering their intrinsic structures at the atomic scale. In this study, advanced synthesis methods of preparing 2D TMD and MPT materials are tested, and their properties are investigated, with stress placed on their phase transition. The surge of this type of report is associated with water-splitting catalysis and other catalytic purposes. This study aims to be a guideline to explore the mentioned 2D TMD and MPT materials for their catalytic applications.

Identifying Metallic Transition-Metal Dichalcogenides for Hydrogen Evolution through Multilevel High-Throughput Calculations and Machine Learning

High-performance electrocatalysts not only exhibit high catalytic activity but also have sufficient thermodynamic stability and electronic conductivity. Although metallic 1T-phase MoS₂ and WS₂ have been successfully identified to have high activity for hydrogen evolution reaction, designing more extensive metallic transition-metal dichalcogenides (TMDs) faces a large challenge because of the lack of a full understanding of electronic and composition attributes related to catalytic activity. In this work, we carried out systematic high-throughput calculation screening for all possible existing two-dimensional TMD (2D-TMD) materials to obtain high-performance hydrogen evolution reaction (HER) electrocatalysts by using a few important criteria, such as zero band gap, highest thermodynamic stability among available phases, low vacancy formation energy, and approximately zero hydrogen adsorption energy. A series of materials-perfect monolayer VS₂ and NiS₂, transition-metal ion vacancy (TM-vacancy) ZrTe₂ and PdTe₂, chalcogenide ion vacancy (X-vacancy) MnS₂, CrSe₂, TiTe₂, and VSe₂-have been identified to have catalytic activity comparable with that of Pt(111). More importantly, electronic structural analysis indicates active electrons induced by defects are mostly delocalized in the nearest-neighbor and next-nearest neighbor range, rather than a single-atom active site. Combined with the machine learning method, the HER-catalytic activity of metallic phase 2D-TMD materials can be described quantitatively with local electronegativity (0.195·LEf + 0.205·LEs) and valence electron number (Vtmx), where the descriptor is ΔG_H* = 0.093 - (0.195·LEf + 0.205·LEs) - 0.15·Vtmx.

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe₂ samples and observed both 1T' and T_d phases at room temperature. Few-layer 1T' and T_d MoTe₂ exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe₂. In contrast to bulk 1T' MoTe₂ crystals, where the phase transition to the T_d phase occurs at ∼250 K, the temperature-driven phase transition to the T_d phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor T_d phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies.

Symmetry induced phonon renormalization in few layers of 2H-MoTe2 transistors: Raman and first-principles studies

Understanding of electron-phonon coupling (EPC) in two-dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in situ Raman measurements of electrochemically top-gated 2, 3 and 7 layered 2H-MoTe₂ channel based field-effect transistors. While the [Formula: see text] and B_2g phonon modes exhibit frequency softening and linewidth broadening with hole doping concentration (p) up to ∼2.3 × 10¹³/cm², A_1g shows relatively small frequency hardening and linewidth sharpening. The dependence of frequency renormalization of the [Formula: see text] mode on the number of layers in these 2D crystals confirms that hole doping occurs primarily in the top two layers, in agreement with recent predictions. We present first-principles density functional theory analysis of bilayer MoTe₂ that qualitatively captures our observations, and explain that a relatively stronger coupling of holes with [Formula: see text] or B_2g modes as compared with the A_1g mode originates from the in-plane orbital character and symmetry of the states at valence band maximum. The contrast between the manifestation of EPC in monolayer MoS₂ and those observed here in a few-layered MoTe₂ demonstrates the role of the symmetry of phonons and electronic states in determining the EPC in these isostructural systems.

Light-induced irreversible structural phase transition in trilayer graphene

A crystal structure has a profound influence on the physical properties of the corresponding material. By synthesizing crystals with particular symmetries, one can strongly tune their properties, even for the same chemical configuration (compare graphite and diamond, for instance). Even more interesting opportunities arise when the structural phases of crystals can be changed dynamically through external stimulations. Such abilities, though rare, lead to a number of exciting phenomena, such as phase-change memory effects. In the case of trilayer graphene, there are two common stacking configurations (ABA and ABC) that have distinct electronic band structures and exhibit very different behaviors. Domain walls exist in the trilayer graphene with both stacking orders, showing fascinating new physics such as the quantum valley Hall effect. Extensive efforts have been dedicated to the phase engineering of trilayer graphene. However, the manipulation of domain walls to achieve precise control of local structures and properties remains a considerable challenge. Here, we experimentally demonstrate that we can switch from one structural phase to another by laser irradiation, creating domains of different shapes in trilayer graphene. The ability to control the position and orientation of the domain walls leads to fine control of the local structural phases and properties of graphene, offering a simple but effective approach to create artificial two-dimensional materials with designed atomic structures and electronic and optical properties.

Nonlinear Optical Imaging, Precise Layer Thinning, and Phase Engineering in MoTe2 with Femtosecond Laser

The control of layer thickness and phase structure in two-dimensional transition metal dichalcogenides (2D TMDCs) like MoTe₂ has recently gained much attention due to their broad applications in nanoelectronics and nanophotonics. Continuous-wave laser-based thermal treatment has been demonstrated to realize layer thinning and phase engineering in MoTe₂, but requires long heating time and is largely influenced by the thermal dissipation of the substrate. The ultrafast laser produces a different response but is yet to be explored. In this work, we report the nonlinear optical interactions between MoTe₂ crystals and femtosecond (fs) laser, where we have realized the nonlinear optical characterization, precise layer thinning, and phase transition in MoTe₂ using a single fs laser platform. By using the fs laser with a low fluence as an excitation light source, we observe the strong nonlinear optical signals of second-harmonic generation and four-wave mixing in MoTe₂, which can be used to identify the odd-even layers and layer numbers, respectively. With increasing the laser fluence to the ablation threshold (F_th), we achieve layer-by-layer removal of MoTe₂, while 2H-to-1T' phase transition occurs with a higher laser fluence (2F_th to 3F_th). Moreover, we obtain highly ordered subwavelength nanoripples on both the thick and few-layer MoTe₂ with a controlled fluence, which can be attributed to the fs laser-induced reorganization of the molten plasma. Our study provides a simple and efficient ultrafast laser-based approach capable of characterizing the structures and modifying the physical properties of 2D TMDCs.

Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure

Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.

Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating

Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency response. The NPC has been generally observed in low-dimensional materials, which can be easily affected by the trapping of photocarriers. However, a gradual transition between NPC and positive photoconductivity (PPC) by controlling the light intensity has not been reported. In this study, a gradual and reversible switching between NPC and PPC is achieved in a van der Waals heterostructure of graphene and MoTe₂. The initially observed NPC state becomes a PPC state with the increase in light intensity. The switching between NPC and PPC is considered to originate from the hole trapping in MoTe₂. The hole trapping can induce a shift in the Fermi level of MoTe₂ and thus change the junction characteristics between the graphene and MoTe₂, which determine the photoresponse type (NPC or PPC). Notably, the switching from one state to the other can also be reversed, depending on the gate bias. The stable and reversible effect upon light illumination and application of a gate voltage could be used in optoelectronic devices and optical communications.