Photo-enhanced gas sensing of SnS2 with nanoscale defects

Recent Advances in Engineering of 2D Layered Metal Chalcogenides for Resistive-Type Gas Sensor

2D nanomaterials have triggered widespread attention in sensing applications. Especially for 2D layered metal chalcogenides (LMCs), the unique semiconducting properties and high surface area endow them with great potential for gas sensors. The assembly of 2D LMCs with guest species is an effective functionalization method to produce the synergistic effects of hybridization for greatly enhancing the gas-sensing properties. This review starts with the synthetic techniques, sensing properties, and principles, and then comprehensively compiles the advanced achievements of the pristine 2D LMCs gas sensors. Key advances in the development of the functionalization of 2D LMCs for enhancing gas-sensing properties are categorized according to the spatial architectures. It is systematically discussed in three aspects: surface, lattice, and interlayer, to comprehend the benefits of the functionalized 2D LMCs from surface chemical effect, electronic properties, and structure features. The challenges and outlooks for developing high-performance 2D LMCs-based gas sensors are also proposed.

Enhanced photocatalytic performance of SnS2 under visible light irradiation: strategies and future perspectives

Tin(II) sulfide (SnS2) has emerged as a promising candidate for visible light photocatalytic materials. As a member of the transition metal dichalcogenides (TMDs) family, SnS2 features a band gap of approximately 2.20 eV and a layered structure, rendering it suitable for visible light activation with a high specific surface area. However, the application of SnS2 as a visible light photocatalyst still requires improvement, particularly in addressing the high recombination of electrons and holes, as well as the poor selectivity inherent in its perfect crystal structure. Therefore, ongoing research focuses on strategies to enhance the photocatalytic performance of SnS2. In this comprehensive review, we analyze recent advances and promising strategies for improving the photocatalytic performance of SnS2. Various successful approaches have been reported, including controlling the reactive facets of SnS2, inducing defects in the crystal structure, manipulating morphologies, depositing noble metals, and forming heterostructures. We provide a detailed understanding of these phenomena and the preparation techniques involved, as well as future considerations for exploring new science in SnS2 photocatalysis and optimizing performance.

Band Alignment Transition and Enhanced Performance in Vertical SnS2/MoS2 van der Waals Photodetectors

The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers.

Enhanced NO2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability

Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.

Ultrasensitive and reversible NO2 gas sensor based on SnS2/TiO2 heterostructures for room temperature applications

Nitrogen dioxide (NO2) is one of the toxic gases produced by chemical industries, power plants, and vehicles. In this work, we demonstrate an inexpensive sensing platform for NO2 detection at room temperature (RT-32 °C) based on a charge transfer mechanism. Three-dimensional hierarchical SnS2 and SnS2/mesoporous TiO2 nanocomposites were synthesized via the solvothermal method. SnS2/20 wt% mesoporous TiO2 nanocomposites sample showed 245.4% enhanced response compared to pristine SnS2. The fabricated device exhibits excellent selectivity among all other interfering gases with one-month stability. The rapid response and enhanced response achieved were obtained for the minimum concentration of 2 ppm NO2. The formation of heterojunction between SnS2 and mesoporous TiO2 has a synergetic effect, providing more active sites and porous structures for the detection of NO2 gas molecules.

Confinement of 1D Chain and 2D Layered CuI Modules in K-INA-R Frameworks via Coordination Assembly: Structure Regulation and Semiconductivity Tuning

Herein, we present a new series of CuI-based hybrid materials with tunable structures and semiconducting properties. The CuI inorganic modules can be tailored into a one-dimensional (1D) chain and two-dimensional (2D) layer and confined/stabilized in coordination frameworks of potassium isonicotinic acid (HINA) and its derivatives (HINA-R, R = OH, NO2, and COOH). The resulting CuI-based hybrid materials exhibit interesting semiconducting behaviors associated with the dimensionality of the inorganic module; for instance, the structures containing the 2D-CuI module demonstrate significantly enhanced photoconductivity with a maximum increase of five orders of magnitude compared to that of the structures containing the 1D-CuI module. They also represent the first CuI-bearing hybrid chemiresistive gas sensors for NO2 with boosted sensing performance and sensitivity at multiple orders of magnitude over that of the pristine CuI. Particularly, the sensing ability of CuI-K-INA containing both 1D- and 2D-CuI modules is comparable to those of the best NO2 chemiresistors reported thus far.

Field Effect Transistor Gas Sensors Based on Mechanically Exfoliated Van der Waals Materials

The high surface-to-volume ratio and flatness of mechanically exfoliated van der Waals (vdW) layered materials make them an ideal platform to investigate the Langmuir absorption model. In this work, we fabricated field effect transistor gas sensors, based on a variety of mechanically exfoliated vdW materials, and investigated their electrical field-dependent gas sensing properties. The good agreement between the experimentally extracted intrinsic parameters, such as equilibrium constant and adsorption energy, and theoretically predicted values suggests validity of the Langmuir absorption model for vdW materials. Moreover, we show that the device sensing behavior depends crucially on the availability of carriers, and giant sensitivities and strong selectivity can be achieved at the sensitivity singularity. Finally, we demonstrate that such features provide a fingerprint for different gases to quickly detect and differentiate between low concentrations of mixed hazardous gases using sensor arrays.

Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector

van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS₂ van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS₂/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.

A room temperature all-optical sensor based on two-dimensional SnS2 for highly sensitive and reversible NO2 sensing

Fiber-optic gas sensors have been considered a low-cost, effective, and robust approach for monitoring nitrogen dioxide (NO₂) gas which is a major toxic gaseous pollutant. The integration of functional nanoscale materials provides additional dimensions for realizing ultra-sensitive and selective NO₂ detection, however, the trade-off is the need for sophisticated photonic structures or external non-optical peripherals (e.g. electrical heaters). In this work, we demonstrate the development of a room temperature, all-optical, and high-performance NO₂ sensor based on a simple D-shaped optical fiber incorporated with ultra-thin two-dimensional (2D) tin disulfide (SnS₂). A visible light source at 473 nm is used to power the optical fiber, and at the same time excite the 2D SnS₂ layer via the evanescent field, to generate extra charge carriers. Upon exposure to NO₂ at room temperature, the physisorbed gas molecules induce charge exchange with the 2D SnS₂. This significantly re-distributes the photo-excited charge carriers in the ultra-thin material, therefore manipulating the corresponding optical absorption and scattering. As a result, the optical output power intensity varies as the sensor output through the evanescent field coupling. This all-optical sensor demonstrates an optical power variation of up to 7 µW upon the exposure of NO₂ gas at a low concentration of 50 ppb. This response is fully reversible with an extremely low limit of detection (LOD) of 0.464 ppb. We consider that this work provides a feasible and simple solution to realize high-performance optical gas sensors without the integration of external non-optical peripherals for effective monitoring of environmentally hazardous gases.

Photoexcited NO2 Enables Accelerated Response and Recovery Kinetics in Light-Activated NO2 Gas Sensing

Slow response and recovery kinetics is a major challenge for practical room-temperature NO₂ gas sensing. Here, we report the use of visible light illumination to significantly shorten the response and recovery times of a PbSe quantum dot (QD) gel sensor by 21% (to 27 s) and 63% (to 102 s), respectively. When combined with its high response (0.04%/ppb) and ultralow limit of detection (3 ppb), the reduction in response and recovery time makes the PbSe QD gel sensor among the best p-type room-temperature NO₂ sensors reported to date. A combined experimental and theoretical investigation reveals that the accelerated response and recovery time is primarily due to photoexcitation of NO₂ gaseous molecules and adsorbed NO₂ on the gel surface, rather than the excitation of the semiconductor sensing material, as suggested by the currently prevailing light-activated gas-sensing theory. Furthermore, we find that the extent of improvement attained in the recovery speed also depends on the distribution of excited electrons in the adsorbed NO₂/QD gel system. This work suggests that the design of light-activated sensor platforms may benefit from a careful assessment of the photophysics of the analyte in the gas phase and when adsorbed onto the semiconductor surface.

Graphene/SnS2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365-2240 nm Detection

The fabrication of graphene/SnS₂ van der Waals photodetectors and their photoelectrical properties are systematically investigated. It was found that a dry transferred graphene/SnS₂ van der Waals heterostructure had a broadband sensing range from ultraviolet (365 nm) to near-infrared (2.24 μm) and respective improved responsivities and photodetectivities of 7.7 × 10³ A/W and 8.9 × 10¹³ jones at 470 nm and 2 A/W and 1.8 × 10¹⁰ jones at 1064 nm. Moreover, positive and negative photoconductance effects were observed when the photodetectors were illuminated by photon sources with energies greater and smaller than the bandgap of SnS₂, respectively. The photoresponsivity (R) versus incident power density (P) follows the empirical law R ∝ P_in^β, with β > -1 for positive photoconductance effects and β < -1 for negative photoconductance effects. On the basis of the Fowler-Nordheim tunneling model and a Poisson and drift-diffusion simulation, we show quantitatively that the barrier height and barrier width of the heterostructure photodetector could be controlled by a laser and an external electrical field through a photogating effect generated by carriers trapped at the interface, which could be used to tune the separation and transport of photogenerated carriers. Our results may be useful for the design of high performance van der Waals heterojunction photodetectors.

Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation

Using a single-device two-dimensional (2D) rhenium disulfide (ReS₂) field-effect transistor (FET) with enhanced gas species selectivity by light illumination, we reported a selective and sensitive detection of volatile organic compound (VOC) gases. 2D materials have the advantage of a high surface-area-to-volume ratio for high sensitivity to molecules attached to the surface and tunable carrier concentration through field-effect control from the back-gate of the channel, while keeping the top surface open to the air for chemical sensing. In addition to these advantages, ReS₂ has a direct band gap also in multilayer cases, which sets it apart from other transition-metal dichalcogenides (TMDCs). We take advantage of the effective response of ReS₂ to light illumination to improve the selectivity and gas-sensing efficiency of a ReS₂-FET device. We found that light illumination modulates the drain current response in a ReS₂-FET to adsorbed molecules, and the sensing activity differs depending on the gas species used, such as acetone, ethanol, and methanol. Furthermore, wavelength and carrier density rely on certain variations in light-modulated sensing behaviors for each chemical. The device will distinguish the gas concentration in a mixture of VOCs using the differences induced by light illumination, enhancing the selectivity of the sensor device. Our results shed new light on the sensing technologies for realizing a large-scale sensor network in the Internet-of-Things era.

Giant gauge factor of Van der Waals material based strain sensors

There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.

Loading SnS2 nanosheets decorated with MoS2 nanoparticles on a flake-shaped g-C3N4 network for enhanced photocatalytic performance

A g-C₃N₄/MoS₂/SnS₂ ternary composite photocatalyst with a unique photo-generated carrier transfer pathway is obtained, which exhibits excellent photocatalytic activity.

Carbon-doping-induced energy-band modification and vacancies in SnS2 nanosheets for room-temperature ppb-level NO2 detection

Carbon-doping mediated synergistic effect of energy-band modification and vacancy provides a new solution for developing high-performance LMDs-based gas sensors.

Two-dimensional materials in biomedical, biosensing and sensing applications

Two-dimensional (2D) materials are at the forefront of materials research. Here we overview their applications beyond graphene, such as transition metal dichalcogenides, monoelemental Xenes (including phosphorene and bismuthene), carbon nitrides, boron nitrides along with transition metal carbides and nitrides (MXenes). We discuss their usage in various biomedical and environmental monitoring applications, from biosensors to therapeutic treatment agents, their toxicity and their utility in chemical sensing. We highlight how a specific chemical, physical and optical property of 2D materials can influence the performance of bio/sensing, improve drug delivery and photo/thermal therapy as well as affect their toxicity. Such properties are determined by crystal phases electrical conductivity, degree of exfoliation, surface functionalization, strong photoluminescence, strong optical absorption in the near-infrared range and high photothermal conversion efficiency. This review conveys the great future of all the families of 2D materials, especially with the expanding 2D materials' landscape as new materials emerge such as germanene and silicene.

Self-powered, ultrasensitive, room temperature humidity sensors using SnS2 nanofilms

Humidity monitoring has become extremely vital in various technological fields such as environment control, biomedical engineering, and so on. Therefore, a substantial interest lies in the development of fast and highly sensitive devices with high figures of merit. Self-powered and ultrasensitive humidity sensors based on SnS2 nanofilms of different film thicknesses have been demonstrated in this work. The sensing behavior has been investigated in the relative humidity (RH) range of 2-99%. The observed results reveal a remarkable response and ultrafast detection even with zero applied bias (self-powered mode), with response and recovery times of ~ 10 and ~ 0.7 s, respectively. The self-powered behavior has been attributed to the inhomogeneities and the asymmetry in the contact electrodes. The highest sensitivity of ~ 5.64 × 106% can be achieved at an applied bias of 5 V. This approach of fabricating such highly responsive, self-powered and ultrafast sensors with simple device architectures will be useful for designing futuristic sensing devices.

Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials

Room-temperature gas sensors have aroused great attention in current gas sensor technology because of deemed demand of cheap, low power consumption and portable sensors for rapidly growing Internet of things applications. As an important approach, light illumination has been exploited for room-temperature operation with improving gas sensor's attributes including sensitivity, speed and selectivity. This review provides an overview of the utilization of photoactivated nanomaterials in gas sensing field. First, recent advances in gas sensing of some exciting different nanostructures and hybrids of metal oxide semiconductors under light illumination are highlighted. Later, excellent gas sensing performance of emerging two-dimensional materials-based sensors under light illumination is discussed in details with proposed gas sensing mechanism. Originated impressive features from the interaction of photons with sensing materials are elucidated in the context of modulating sensing characteristics. Finally, the review concludes with key and constructive insights into current and future perspectives in the light-activated nanomaterials for optoelectronic gas sensor applications.

Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors

Layered materials are highly attractive in gas sensor research due to their extraordinary electronic and physicochemical properties. The development of cheaper and faster room-temperature detectors with high sensitivities especially in the parts per billion level is the main challenge in this rapidly developing field. Here, we show that sensitivity to NO₂ (S) can be greatly improved by at least two orders of magnitude using an n-type electrode metal. Unconventionally for such devices, the ln(S) follows the classic Langmuir isotherm model rather than S as is for a p-type electrode metal. Excellent device sensitivities, as high as 13,000% for 9 ppm and 97% for 1 ppb NO₂, are achieved with Mn electrodes at room temperature, which can be further tuned and enhanced with the application of a bias. Long-term stability, fast recovery, and strong selectivity toward NO₂ are also demonstrated. Such impressive features provide a real solution for designing a practical high-performance layered material-based gas sensor.

Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS2

Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate from Schottky-Mott behavior when determined by transport methods, while X-ray photoelectron spectroscopy measurements suggest that the contacts should be at the Schottky limit. Here, we present a systematic investigation on the influence of metal selection when electrically contacting SnS₂, a layered metal dichalcogenide semiconductor with the potential to replace silicon. It is found that the electrically measured barrier height depends also weakly on the work function of the metal contacts with slopes of 0.09 and -0.34 for n-type and p-type Schottky contacts, respectively. Based on the Kirchhoff voltage law and considering a current path induced by metallic defects, we found that the Schottky barrier still follows the Schottky-Mott limits and the electrically measured barrier height mainly originates from the van der Waals gap between the metal and SnS₂, and the slope depends on the magnitude of the van der Waals capacitance.

First-Principles Study for Gas Sensing of Defective SnSe2 Monolayers

We report the interaction between gas molecules (NO2 and NH3) and the SnSe2 monolayers with vacancy and dopants (O and N) for potential applications as gas sensors. Compared with the gas molecular adsorbed on pristine SnSe2 monolayer, the Se-vacancy SnSe2 monolayer obviously enhances sensitivity to NO2 adsorption. The O-doped SnSe2 monolayer shows similar sensitivity to the pristine SnSe2 monolayer when adsorbing NO2 molecule. However, only the N-doped SnSe2 monolayer represents a visible enhancement for NO2 and NH3 adsorption. This work reveals that the selectivity and sensitivity of SnSe2-based gas sensors could be improved by introducing the vacancy or dopants.

High Selectivity Gas Sensing and Charge Transfer of SnSe2

SnSe₂ is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe₂ using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe₂ grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe₂ to NO₂, whereas the direction of charge transfer is the opposite for NH₃. Notably, a flat molecular band appears around the Fermi energy after NO₂ adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH₃, NO₂ molecules adsorbed on SnSe₂ have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe₂ sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe₂.