Molecularly imprinted Photoelectrochemical sensor for Escherichia coli based on Cu:ZIF-8/KZ3TTz heterojunction

Herein, a signal stable molecularly imprinted photoelectrochemical (MIP-PEC) sensing platform was designed to sensitively detect Escherichia coli by incorporating polythiophene film with Cu: ZIF-8/KZ3TTz heterojunction. Attributed to the formation of a staggered type II heterostructure between KZ3TTz and Cu: ZIF-8 semiconductors, the Cu: ZIF-8/KZ3TTz heterojunction exhibited stable and significant cathode PEC response. Impressively, selective MIP film was grown on the surface of Cu: ZIF-8/KZ3TTz/GCE by electro-polymerization of 2,2-Dimethyl-5-(3-thienyl)-1,3-dioxane-4,6-dione (DTDD) in the presence of E. coli. After removing E. coli, more electrons were transferred to the electrolyte solution through the imprinting cavity on the MIP film, which was eliminated by O2 in the electrolyte, causing further enhancement of the cathode PEC response. On the contrary, when the imprinted cavity was filled with E. coli, the cathodic PEC response gradually decreased due to steric hindrance effect. The sensor showed excellent linearity in the range of 101 to 108 CFU/mL with a detection limit of 4.09 CFU/mL (S/N = 3). This strategy offered a novel approach for pathogenic bacteria detection in food safety and environmental monitoring.

Isomers of n-Type Poly(thiophene-alt-co-thiazole) for Organic Thermoelectrics

n-Type polythiophene represents a promising category of n-type polymer thermoelectric materials known for their straightforward structure and scalable synthesis. However, n-type polythiophene often suffers from a twisted backbone and poor stacking property when introducing high-density electron-withdrawing groups for a lower lowest unoccupied molecular orbital (LUMO) level, which is considered to be beneficial for n-doping efficiency. Herein, we developed two isomers of polythiophene derivatives, PTTz1 and PTTz2, by inserting thiazole units into the polythiophene backbone composed of thieno[3,4-c]pyrrole-4,6-dione (TPD) and thiophene-3,4-dicarbonitrile (2CNT). Although PTTz1 and PTTz2 share a similar polymer skeleton, they differ in thiazole configuration, with the nitrogen atoms of the thiazole units oriented toward TPD and 2CNT, respectively. The insertion of thiazole units significantly planarizes the polythiophene backbone while largely preserving low LUMO levels. Notably, PTTz2 exhibits a more coplanar backbone and closer π-stacking compared to PTTz1, resulting in a greatly enhanced electron mobility. Both PTTz1 and PTTz2 can be easily n-doped due to their deep LUMO levels. PTTz2 demonstrates superior thermoelectric performance, with an electrical conductivity of 50.3 S cm-1 and a power factor of 23.8 μW m-1 K-2, which is approximately double that of PTTz1. This study highlights the impact of the thiazole unit on n-type polythiophene derivatives and provides valuable guidelines for the design of high-performance n-type polymer thermoelectric materials.

The Effect of Organic Semiconductor Electron Affinity on Preventing Parasitic Oxidation Reactions Limiting Performance of n-Type Organic Electrochemical Transistors

A key challenge in the development of organic mixed ionic-electronic conducting materials (OMIEC) for high performance electrochemical transistors is their stable performance in ambient. When operating in aqueous electrolyte, potential reactions of the electrochemically injected electrons with air and water could hinder their persistence, leading to a reduction in charge transport. Here, the impact of deepening the LUMO energy level of a series of electron-transporting semiconducting polymers is evaluated, and subsequently rendering the most common oxidation processes of electron polarons thermodynamically unfavorable, on organic electrochemical transistors (OECTs) performance. Employing time resolved spectroelectrochemistry with three analogous polymers having varying electron affinities (EA), it is found that an EA below the thermodynamic threshold for oxidation of its electron polarons by oxygen significantly improves electron transport and lifetime in air. A polymer with a sufficiently large EA and subsequent thermodynamically unfavorable oxidation of electron polarons is reported, which is used as the semiconducting layer in an OECT, in its neutral and N-DMBI doped form, resulting in an excellent and air-stable OECT performance. These results show a general design methodology to avoid detrimental parasitic reactions under ambient conditions, and the benefits that arise in electrical performance.

Fibres-threads of intelligence-enable a new generation of wearable systems

Fabrics represent a unique platform for seamlessly integrating electronics into everyday experiences. The advancements in functionalizing fabrics at both the single fibre level and within constructed fabrics have fundamentally altered their utility. The revolution in materials, structures, and functionality at the fibre level enables intimate and imperceptible integration, rapidly transforming fibres and fabrics into next-generation wearable devices and systems. In this review, we explore recent scientific and technological breakthroughs in smart fibre-enabled fabrics. We examine common challenges and bottlenecks in fibre materials, physics, chemistry, fabrication strategies, and applications that shape the future of wearable electronics. We propose a closed-loop smart fibre-enabled fabric ecosystem encompassing proactive sensing, interactive communication, data storage and processing, real-time feedback, and energy storage and harvesting, intended to tackle significant challenges in wearable technology. Finally, we envision computing fabrics as sophisticated wearable platforms with system-level attributes for data management, machine learning, artificial intelligence, and closed-loop intelligent networks.

Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes

Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. This work utilizes ion-exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer-sorted semiconducting SWCNTs with AuCl3 as the initial p-dopant and investigates the impact of ion size on conductivity, Seebeck coefficients, and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.

Crystal Composition Transformer: Self-Learning Neural Language Model for Generative and Tinkering Design of Materials

Self-supervised neural language models have recently achieved unprecedented success from natural language processing to learning the languages of biological sequences and organic molecules. These models have demonstrated superior performance in the generation, structure classification, and functional predictions for proteins and molecules with learned representations. However, most of the masking-based pre-trained language models are not designed for generative design, and their black-box nature makes it difficult to interpret their design logic. Here a Blank-filling Language Model for Materials (BLMM) Crystal Transformer is proposed, a neural network-based probabilistic generative model for generative and tinkering design of inorganic materials. The model is built on the blank-filling language model for text generation and has demonstrated unique advantages in learning the "materials grammars" together with high-quality generation, interpretability, and data efficiency. It can generate chemically valid materials compositions with as high as 89.7% charge neutrality and 84.8% balanced electronegativity, which are more than four and eight times higher compared to a pseudo-random sampling baseline. The probabilistic generation process of BLMM allows it to recommend materials tinkering operations based on learned materials chemistry, which makes it useful for materials doping. The model is applied to discover a set of new materials as validated using the Density Functional Theory (DFT) calculations. This work thus brings the unsupervised transformer language models based generative artificial intelligence to inorganic materials. A user-friendly web app for tinkering materials design has been developed and can be accessed freely at www.materialsatlas.org/blmtinker.

Development of High Performance Thermoelectric Polymers via Doping or Dedoping Engineering

It is of great significance to develop high-performance thermoelectric (TE) materials, because they can be used to harvest waste heat into electricity and there is abundant waste heat on earth. The conventional TE materials are inorganic semimetals or semiconductors like Bi2Te3 and its derivatives. However, they have problems of high cost, scarce/toxic elements, high thermal conductivity, and poor mechanical flexibility. Organic TE materials emerged as the next-generation TE materials because of their merits including solution processability, low cost, abundant element, low intrinsic thermal conductivity, and high mechanical flexibility. Organic TE materials are mainly conducting polymers because of their high conductivity. Both the conductivity and Seebeck coefficient depend on the doping level, and they are interdependent. Hence, the TE properties of polymers can be improved through doping/dedoping engineering. There are three types of doping forms, oxidative (or reductive) doping, protonic acid doping, and charge transfer doping. Accordingly, they can be dedoped by different approaches. In this article, we review the methods to dope and dedope p-type and n-type TE polymers and the combination of doping and dedoping to optimize their TE properties. Secondary doping is also covered, since it can significantly enhance the conductivity of some TE polymers.

Conducting Electrospun Poly(3-hexylthiophene-2,5-diyl) Nanofibers: New Strategies for Effective Chemical Doping and its Assessment Using Infrared Spectroscopy

Vibrational spectroscopy allows the investigation of structural properties of pristine and doped poly(3-hexylthiophene-2,5-diyl) (P3HT) in highly anisotropic materials, such as electrospun micro- and nanofibers. Here, we compare several approaches for doping P3HT fibers. We have selected two different electron acceptor molecules as dopants, namely iodine and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In the case of iodine, we have explored the doping of the fibers according to several different procedures, i.e., by sequential doping both in vapors and in solution, and with a novel promising one-step method, which exploits the mixing of the dopant to the electrospinning feed solution. Polarized infrared (IR) spectroscopy experiments prove the orientation of P3HT chains, with the polymer backbone mainly running parallel to the fiber axis. After doping, P3HT fibers show very strong and polarized doping-induced IR active vibrations (IRAVs), which are the spectroscopic signature of the structure relaxation induced by the charged defects (polarons), thus providing an unambiguous proof of the effective doping. Raman spectroscopy complements the IR evidence: The Raman spectrum shows a clearly recognizable shift of the main band, the so-called effective conjugation coordinate band, in the doped samples. A simple protocol, which quantifies the evolution of the IRAV bands with time, allows monitoring of the doping stability over time and confirms that F4TCNQ is by far superior to iodine.

Charge-Transfer Complexes: Fundamentals and Advances in Catalysis, Sensing, and Optoelectronic Applications

Supramolecular assemblies, formed through electronic charge transfer between two or more entities, represent a rich class of compounds dubbed as charge-transfer complexes (CTCs). Their distinctive formation pathway, rooted in charge-transfer processes at the interface of CTC-forming components, results in the delocalization of electronic charge along molecular stacks, rendering CTCs intrinsic molecular conductors. Since the discovery of CTCs, intensive research has explored their unique properties including magnetism, conductivity, and superconductivity. Their more recently recognized semiconducting functionality has inspired recent developments in applications requiring organic semiconductors. In this context, CTCs offer a tuneable energy gap, unique charge-transport properties, tailorable physicochemical interactions, photoresponsiveness, and the potential for scalable manufacturing. Here, an updated viewpoint on CTCs is provided, presenting them as emerging organic semiconductors. To this end, their electronic and chemical properties alongside their synthesis methods are reviewed. The unique properties of CTCs that benefit various related applications in the realms of organic optoelectronics, catalysts, and gas sensors are discussed. Insights for future developments and existing limitations are described.

Ultrafast Response and Threshold Adjustable Intelligent Thermoelectric Systems for Next-Generation Self-Powered Remote IoT Fire Warning

Fire warning is vital to human life, economy and ecology. However, the development of effective warning systems faces great challenges of fast response, adjustable threshold and remote detecting. Here, we propose an intelligent self-powered remote IoT fire warning system, by employing single-walled carbon nanotube/titanium carbide thermoelectric composite films. The flexible films, prepared by a convenient solution mixing, display p-type characteristic with excellent high-temperature stability, flame retardancy and TE (power factor of 239.7 ± 15.8 μW m-1 K-2) performances. The comprehensive morphology and structural analyses shed light on the underlying mechanisms. And the assembled TE devices (TEDs) exhibit fast fire warning with adjustable warning threshold voltages (1-10 mV). Excitingly, an ultrafast fire warning response time of ~ 0.1 s at 1 mV threshold voltage is achieved, rivaling many state-of-the-art systems. Furthermore, TE fire warning systems reveal outstanding stability after 50 repeated cycles and desired durability even undergoing 180 days of air exposure. Finally, a TED-based wireless intelligent fire warning system has been developed by coupling an amplifier, analog-to-digital converter and Bluetooth module. By combining TE characteristics, high-temperature stability and flame retardancy with wireless IoT signal transmission, TE-based hybrid system developed here is promising for next-generation self-powered remote IoT fire warning applications.

Ring Fusion Elevates the Electronic Mobility of Azabenzannulated Perylene Diimide

The backwardness of n-type organic semiconductors still exists compared with the p-type counterparts. Thus, the development of high-performance n-type organic semiconductors is of great importance for organic electronic devices and their integrated circuits. In recent years, azabenzannulated perylene diimide (PDI), as one of immense bay-region-annulated PDI derivatives, has drawn considerable attentions. However, the electronic mobilities of azabenzannulated PDI derivatives are barely satisfactory. In this contribution, the peripheral benzene ring in azabenzannulated PDI 2 was fused to the ortho position by intramolecular C-H arylation cyclization. This endows the resultant azabenzannulated PDI 4 a planar configuration as well as electron deficient pentagonal ring. As a result, the electronic mobility of 4 is almost two orders of magnitude higher than that of the nonfused azabenzannulated PDI 2. This work shall pave a new avenue in elevating the performance of azabenzannulated PDI in organic electronics.

Alcohol-Processable All-Polymer n-Type Thermoelectrics

The general strategy for n-type organic thermoelectric is to blend n-type conjugated polymer hosts with small molecule dopants. In this work, all-polymer n-type thermoelectric is reported by dissolving a novel n-type conjugated polymer and a polymer dopant, poly(ethyleneimine) (PEI), in alcohol solution, followed by spin-coating to give polymer host/polymer dopant blend film. To this end, an alcohol-soluble n-type conjugated polymer is developed by attaching polar and branched oligo (ethylene glycol) (OEG) side chains to a cyano-substituted poly(thiophene-alt-co-thiazole) main chain. The main chain results in the n-type property and the OEG side chain leads to the solubility in hexafluorineisopropanol (HFIP). In the polymer host/polymer dopant blend film, the Coulombic interaction between the dopant counterions and the negatively charged polymer chains is reduced and the ordered stacking of the polymer host is preserved. As a result, the polymer host/polymer dopant blend exhibits the power factor of 36.9 µW m-1 K-1, which is one time higher than that of the control polymer host/small molecule dopant blend. Moreover, the polymer host/polymer dopant blend shows much better thermal stability than the control polymer host/small molecule dopant blend. This research demonstrates the high performance and excellent stability of all-polymer n-type thermoelectric.

Sequential Cascade Doping of Conjugated-Polymer-Wrapped Carbon Nanotubes for Highly Electrically Conductive Platforms

To explore a highly conductive flexible platform, this study develops PIDF-BT@SWCNT by wrapping single-walled carbon nanotubes (SWCNTs) with a conjugated polymer, PIDF-BT, known for its effective doping properties. By evaluating the doping behaviors of various dopants on PIDF-BT, appropriate dopant combinations for cascade doping are selected to improve the doping efficiency of PIDF-BT@SWCNT. Specifically, using F4TCNQ or F6TCNNQ as the first dopant, followed by AuCl3 as the second dopant, demonstrates remarkable doping efficiency, surpassing that of the individual dopants and yielding an exceptional electrical conductivity exceeding 6000 S/cm. Characterization using X-ray photoelectron spectroscopy and Raman spectroscopy elucidates the doping mechanism, revealing an increase in the proportion of electron-donating atoms and the ratio of quinoid structures upon F4TCNQ/AuCl3 cascade doping. These findings offer insights into optimizing dopant combinations for cascade doping, showcasing its advantages in enhancing doping efficiency and resulting electrical conductivity compared with single dopant processes.

Design Strategy for the Synthesis of Self-Doped n-Type Molecules

n-Type organic conductive molecules play a significant role in organic electronics. Self-doping can increase the carrier concentration within the materials to improve the conductivity without the need for additional intentional dopants. This review focuses on the various strategies employed in the synthesis of self-doped n-type molecules, and provides an overview of the doping mechanisms. By elucidating these mechanisms, the review aims to establish the relationship between molecular structure and electronic properties. Furthermore, the review outlines the current applications of self-doped n-type molecules in the field of organic electronics, highlighting their performance and potential in various devices. It also offers insights into the future development of self-doped materials.

Enhancing the Thermoelectric Properties of Conjugated Polymers by Suppressing Dopant-Induced Disorder

Doping is a crucial strategy to enhance the performance of various organic electronic devices. However, in many cases, the random distribution of dopants in conjugated polymers leads to the disruption of the polymer microstructure, severely constraining the achievable performance of electronic devices. Here, it is shown that by ion-exchange doping polythiophene-based P[(3HT)1-x-stat-(T)x] (x = 0 (P1), 0.12 (P2), 0.24 (P3), and 0.36 (P4)), remarkably high electrical conductivity of >400 S cm-1 and power factor of >16 µW m-1 K-2 are achieved for the random copolymer P3, ranking it among highest ever reported for unaligned P3HT-based films, significantly higher than that of P1 (<40 S cm-1, <4 µW m-1 K-2). Although both polymers exhibit comparable field-effect transistor hole mobilities of ≈0.1 cm2 V-1 s-1 in the pristine state, after doping, Hall effect measurements indicate that P3 exhibits a large Hall mobility up to 1.2 cm2 V-1 s-1, significantly outperforming that of P1 (0.06 cm2 V-1 s-1). GIWAXS measurement determines that the in-plane π-π stacking distance of doped P3 is 3.44 Å, distinctly shorter than that of doped P1 (3.68 Å). These findings contribute to resolving the long-standing dopant-induced-disorder issues in P3HT and serve as an example for achieving fast charge transport in highly doped polymers for efficient electronics.

Intrinsically Stretchable Organic Thermoelectric Polymers Enabled by Incorporating Fused-Ring Conjugated Breakers

While research on organic thermoelectric polymers is making significant progress in recent years, realization of a single polymer material possessing both thermoelectric properties and stretchability for the next generation of self-powered wearable electronics is a challenging task and remains an area yet to be explored. A new molecular engineering concept of "conjugated breaker" is employed to impart stretchability to a highly crystalline diketopyrrolepyrrole (DPP)-based polymer. A hexacyclic diindenothieno[2,3-b]thiophene (DITT) unit, with two 4-octyloxyphenyl groups substituted at the tetrahedral sp3-carbon bridges, is selected to function as the conjugated breaker that can sterically hinder intermolecular packing to reduce polymers' crystallinity. A series of donor-acceptor random copolymers is thus developed via polymerizing the crystalline DPP units with the DITT conjugated breakers. By controlling the monomeric DPP/DITT ratios, DITT30 reaches the optimal balance of crystalline/amorphous regions, exhibiting an exceptional power factor (PF) value up to 12.5 µW m-1 K-2 after FeCl3-doping; while, simultaneously displaying the capability to withstand strains exceeding 100%. More significantly, the doped DITT30 film possesses excellent mechanical endurance, retaining 80% of its initial PF value after 200 cycles of stretching/releasing at a strain of 50%. This research marks a pioneering achievement in creating intrinsically stretchable polymers with exceptional thermoelectric properties.

First-Principles Study of Doped CdX(X = Te, Se) Compounds: Enhancing Thermoelectric Properties

Isovalent doping offers a method to enhance the thermoelectric properties of semiconductors, yet its influence on the phonon structure and propagation is often overlooked. Here, we take CdX (X=Te, Se) compounds as an example to study the role of isovalent doping in thermoelectrics by first-principles calculations in combination with the Boltzmann transport theory. The electronic and phononic properties of Cd8Se8, Cd8Se7Te, Cd8Te8, and Cd8Te7Se are compared. The results suggest that isovalent doping with CdX significantly improves the thermoelectric performance. Due to the similar properties of Se and Te atoms, the electronic properties remain unaffected. Moreover, doping enhances anharmonic phonon scattering, leading to a reduction in lattice thermal conductivity. Our results show that optimized p-type(n-type) ZT values can reach 3.13 (1.33) and 2.51 (1.21) for Cd8Te7Se and Cd8Se7Te at 900 K, respectively. This research illuminates the potential benefits of strategically employing isovalent doping to enhance the thermoelectric properties of CdX compounds.

Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective

Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed for further optimizing AgCuQ-based thermoelectric materials.

Chemical modification and doping of poly(p-phenylenes): A theoretical study

CONTEXT

Conjugated polymers (CPs) have been recognized as promising materials for the manufacture of electronic devices. However, further studies are still needed to enhance the electrical conductivity of these type of organic materials. The two main strategies for achieving this improvement are the doping process and chemical modification of the polymer chain. Therefore, in this article, we conduct a theoretical investigation, employing DFT calculations to evaluate the structural, energetic, and electronic properties of pristine and push-pull-derived poly(p-phenylene) oligomers (PPPs), as well as the analysis at the molecular level of the polymer doping process. As a primary conclusion, we determined that the PPP oligomer substituted with the push-pull group 4-EtN/CNPhNO2 exhibited the smallest HOMO-LUMO gap (Eg) among the studied oligomers. Moreover, we observed that the doping process, whether through electron removal or the introduction of the dopant anion ClO4-, led to a substantial reduction in the Eg of the PPP, indicating an enhancement in the polymer's electrical conductivity.

METHODS

DFT calculations were conducted using the PBE0 functional along with the Pople's split valence 6-31G(d,p) basis set, which includes polarization functions on all atoms (B97D/6-31G(d,p)).

Assessing molecular doping efficiency in organic semiconductors with reactive Monte Carlo

The addition of molecular dopants into organic semiconductors (OSCs) is a ubiquitous augmentation strategy to enhance the electrical conductivity of OSCs. Although the importance of optimizing OSC-dopant interactions is well-recognized, chemically generalizable structure-function relationships are difficult to extract due to the sensitivity and dependence of doping efficiency on chemistry, processing conditions, and morphology. Computational modeling for an integrated OSC-dopant design is an attractive approach to systematically isolate fundamental relationships, but requires the challenging simultaneous treatment of molecular reactivity and morphology evolution. We present the first computational study to couple molecular reactivity with morphology evolution in a molecularly doped OSC. Reactive Monte Carlo is employed to examine the evolution of OSC-dopant morphologies and doping efficiency with respect to dielectric, the thermodynamic driving for the doping reaction, and dopant aggregation. We observe that for well-mixed systems with experimentally relevant dielectric constants, doping efficiency is near unity with a very weak dependence on the ionization potential and electron affinity of OSC and dopant, respectively. At experimental dielectric constants, reaction-induced aggregation is observed, corresponding to the well-known insolubility of solution-doped materials. Simulations are qualitatively consistent with a number of experimental studies showing a decrease of doping efficiency with increasing dopant concentration. Finally, we observe that the aggregation of dopants lowers doping efficiency and thus presents a rational design strategy for maximizing doping efficiency in molecularly doped OSCs. This work represents an important first step toward the systematic integration of molecular reactivity and morphology evolution into the characterization of multi-scale structure-function relationships in molecularly doped OSCs.

High-performance n-type organic thermoelectrics enabled by modulating cyano-functionalized polythiophene backbones

The scarcity of n-type polymers with high electrical conductivity (σ) and power factor (PF) is the major challenge for organic thermoelectrics (OTEs). By integrating cyano functionalities and an intramolecular conformation lock, we herein synthesize a new electron-deficient building block, CNg4T2, bearing long 1,4,7,10-tetraoxahendecyl side chains, and then further develop two n-type polythiophene derivatives, CNg4T2-2FT and CNg4T2-CNT2, with 3,4-difluorothiophene and 3,3'-dicyano-2,2'-bithiophene as co-units, respectively. Compared with CNg4T2-2FT, CNg4T2-CNT2 features a deeper-positioned lowest unoccupied molecular orbital (LUMO) while maintaining a high degree of backbone coplanarity. As a consequence, the CNg4T2-CNT2 film with molecular dopant N-DMBI delivered an impressive σ of 13.2 S cm-1 and a high PF of up to 10.84 μW m-1 K-2, significantly outperforming CNg4T2-2FT and benchmark n-type polymer N2200 films. To the best of our knowledge, this PF of CNg4T2-CNT2 devices is the highest value for n-type polythiophenes in OTEs. Further characterizations indicate that the high performance of CNg4T2-CNT2-based devices is attributed to the high doping efficiency and ordered packing of polymer chains. Our study demonstrates that CNg4T2 is a highly appealing electron-deficient building block for n-type OTE polymers and also suggests that fine-tuning of the polymer backbone is a powerful approach to accessing high-performance n-type polymers for OTE devices.

Synergistic Interactions in Sequential Process Doping of Polymer/Single-Walled Carbon Nanotube Nanocomposites for Enhanced n-Type Thermoelectric Performance

This study focuses on the fabrication of nanocomposite thermoelectric devices by blending either a naphthalene-diimide (NDI)-based conjugated polymer (NDI-T1 or NDI-T2), or an isoindigo (IID)-based conjugated polymer (IID-T2), with single-walled carbon nanotubes (SWCNTs). This is followed by sequential process doping method with the small molecule 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) to provide the nanocomposite with n-type thermoelectric properties. Experiments in which the concentrations of the N-DMBI dopant are varied demonstrate the successful conversion of all three polymer/SWCNT nanocomposites from p-type to n-type behavior. Comprehensive spectroscopic, microstructural, and morphological analyses of the pristine polymers and the various N-DMBI-doped polymer/SWCNT nanocomposites are performed in order to gain insights into the effects of various interactions between the polymers and SWCNTs on the doping outcomes. Among the obtained nanocomposites, the NDI-T1/SWCNT exhibits the highest n-type Seebeck coefficient and power factor of -57.7 µV K-1 and 240.6 µW m-1 K-2 , respectively. However, because the undoped NDI-T2/SWCNT exhibits a slightly higher p-type performance, an integral p-n thermoelectric generator is fabricated using the doped and undoped NDI-T2/SWCNT nanocomposite. This device is shown to provide an output power of 27.2 nW at a temperature difference of 20 K.

Effect of atomic substitution and structure on thermal conductivity in monolayers H-MN and T-MN (M = B, Al, Ga)

Finding materials with suitable thermal conductivity (κ) is crucial for improving energy efficiency, reducing carbon emissions, and achieving sustainability. Atomic substitution and structural adjustments are commonly used methods. By comparing the κ of two different structures of two-dimensional (2D) IIIA-nitrides and their corresponding carbides, we explored whether atomic substitution has the same impact on κ in different structures. All eight materials exhibit normal temperature dependence, with κ decreasing as the temperature rises. Both structures are single atomic layers of 2D materials, forming M-N bonds, with the difference being that H-MN consists of hexagonal rings, while T-MN consists of tetragonal and octagonal rings. 2D IIIA-nitrides provide a good illustration of the impact of atomic substitution and structure on κ. On a logarithmic scale of κ, it approximates two parallel lines, indicating that different structures exhibit similar trends of κ reduction under the same conditions of atomic substitution. We analyzed the mechanisms behind the decreasing trend in κ from a phonon mode perspective. The main reason for the decrease in κ is that heavier atoms lower lattice vibrations, reducing phonon frequencies. Electronegativity increases, altering bonding characteristics and increasing anharmonicity. Reduced symmetry in complex structures decreases phonon group velocities and enhances phonon anharmonicity, leading to decreased phonon lifetimes. It's noteworthy that we found that atomic substitution and structure significantly affect hydrodynamic phonon transport as well. Both complex structures and atomic substitution simultaneously reduce the effects of hydrodynamic phonon transport. By comparing the impact of κ on two different structures of 2D IIIA-nitrides and their corresponding carbides, we have deepened our understanding of phonon transport in 2D materials. Heavier atomic substitution and more complex structures result in reduced κ and decreased hydrodynamic phonon transport effects. This research is likely to have a significant impact on the study of micro- and nanoscale heat transfer, including the design of materials with specific heat transfer properties for future applications.

Toward a Brain-Neuromorphics Interface

Brain-computer interfaces (BCIs) that enable human-machine interaction have immense potential in restoring or augmenting human capabilities. Traditional BCIs are realized based on complementary metal-oxide-semiconductor (CMOS) technologies with complex, bulky, and low biocompatible circuits, and suffer with the low energy efficiency of the von Neumann architecture. The brain-neuromorphics interface (BNI) would offer a promising solution to advance the BCI technologies and shape the interactions with machineries. Neuromorphic devices and systems are able to provide substantial computation power with extremely high energy-efficiency by implementing in-materia computing such as in situ vector-matrix multiplication (VMM) and physical reservoir computing. Recent progresses on integrating neuromorphic components with sensing and/or actuating modules, give birth to the neuromorphic afferent nerve, efferent nerve, sensorimotor loop, and so on, which has advanced the technologies for future neurorobotics by achieving sophisticated sensorimotor capabilities as the biological system. With the development on the compact artificial spiking neuron and bioelectronic interfaces, the seamless communication between a BNI and a bioentity is reasonably expectable. In this review, the upcoming BNIs are profiled by introducing the brief history of neuromorphics, reviewing the recent progresses on related areas, and discussing the future advances and challenges that lie ahead.

Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance

Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.

PAL 2.0: a physics-driven bayesian optimization framework for material discovery

The lack of efficient discovery tools for advanced functional materials remains a major bottleneck to enabling advances in the next-generation energy, health, and sustainability technologies. One main factor contributing to this inefficiency is the large combinatorial space of materials (with respect to material compositions and processing conditions) that is typically redolent of such materials-centric applications. Searches of this large combinatorial space are often influenced by expert knowledge and clustered close to material configurations that are known to perform well, thus ignoring potentially high-performing candidates in unanticipated regions of the composition-space or processing protocol. Moreover, experimental characterization or first principles quantum mechanical calculations of all possible material candidates can be prohibitively expensive, making exhaustive approaches to determine the best candidates infeasible. As a result, there remains a need for the development of computational algorithms that can efficiently search a large parameter space for a given material application. Here, we introduce PAL 2.0, a method that combines a physics-based surrogate model with Bayesian optimization. The key contributing factor of our proposed framework is the ability to create a physics-based hypothesis using XGBoost and Neural Networks. This hypothesis provides a physics-based "prior" (or initial beliefs) to a Gaussian process model, which is then used to perform a search of the material design space. In this paper, we demonstrate the usefulness of our approach on three material test cases: (1) discovery of metal halide perovskites with desired photovoltaic properties, (2) design of metal halide perovskite-solvent pairs that produce the best solution-processed films and (3) design of organic thermoelectric semiconductors. Our results indicate that the novel PAL 2.0 approach outperforms other state-of-the-art methods in its efficiency to search the material design space for the optimal candidate. We also demonstrate the physics-based surrogate models constructed in PAL 2.0 have lower prediction errors for material compositions not seen by the model. To the best of our knowledge, there is no competing algorithm capable of this useful combination for materials discovery, especially those for which data are scarce.

High-Performance and Ecofriendly Organic Thermoelectrics Enabled by N-Type Polythiophene Derivatives with Doping-Induced Molecular Order

The ability of n-type polymer thermoelectric materials to tolerate high doping loading limits further development of n-type polymer conductivity. Herein, two alcohol-soluble n-type polythiophene derivatives that are n-PT3 and n-PT4 are reported. Due to the ability of two polymers to tolerate doping loading more significantly than 100 mol%, both achieve electrical conductivity >100 S cm-1 . Moreover, the conductivity of both polythiophenes remains almost constant at high doping concentrations with excellent doping tunability, which may be related to their ability to overcome charging-induced backbone torsion and morphology change caused by saturated doping. The characterizations reveal that n-PT4 has a high doping level and carrier concentration (>3.10 × 1020  cm-3 ), and the carrier concentration continues to increase as the doping concentration increases. In addition, doping leads to improved crystal structure of n-PT4, and the crystallinity does not decrease significantly with increasing doping concentration; even the carrier mobility increases with it. The synergistic effect of these two leads to both n-PT3 and n-PT4 achieving a breakthrough of 100 in conductivity and power factor. The DMlmC-doped n-PT4 achieves a power factor of over 150 µW m-1  K-2 . These values are among the highest for n-type organic thermoelectric materials.

Enhanced Electrical Conductivity and Mechanical Properties of Stretchable Thermoelectric Generators Formed by Doped Semiconducting Polymer/Elastomer Blends

Recent research efforts have concentrated on the development of flexible and stretchable thermoelectric (TE) materials. However, significant challenges have emerged, including increased resistance and reduced electrical conductivity when subjected to strain. To address these issues, rigid semiconducting polymers and elastic insulating polymers have been incorporated and nanoconfinement effects have been exploited to enhance the charge mobility. Herein, a feasible approach is presented for fabricating stretchable TE materials by using a doped semiconducting polymer blend consisting of either poly(3-hexylthiophene) (P3HT) or poly(3,6-dithiophen-2-yl-2,5-di(2-decyltetradecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thienylenevinylene-2,5-yl) (PDVT-10) as the rigid polymer with styrene-ethylene-butylene-styrene (SEBS) as the elastic polymer. In particular, the blend composition is optimized to achieve a continuous network structure with SEBS, thereby improving the stretchability. The optimized polymer films exhibit well-ordered microstructural aggregates, indicative of good miscibility with FeCl3 and enhanced doping efficiency. Notably, a lower activation energy and higher charge-carrier concentration contribute to an improved electrical conductivity under high tensile strain, with a maximum output power of 1.39 nW at a ΔT of 22.4 K. These findings offer valuable insights and serve as guidelines for the development of stretchable p-n junction thermoelectric generators based on doped semiconducting polymer blends with potential applications in wearable electronics and energy harvesting.

Coplanar Conformational Structure of π-Conjugated Polymers for Optoelectronic Applications

Hierarchical structure of conjugated polymers is critical to dominating their optoelectronic properties and applications. Compared to nonplanar conformational segments, coplanar conformational segments of conjugated polymers (CPs) demonstrate favorable properties for applications as a semiconductor. Herein, recent developments in the coplanar conformational structure of CPs for optoelectronic devices are summarized. First, this review comprehensively summarizes the unique properties of planar conformational structures. Second, the characteristics of the coplanar conformation in terms of optoelectrical properties and other polymer physics characteristics are emphasized. Five primary characterization methods for investigating the complanate backbone structures are illustrated, providing a systematical toolbox for studying this specific conformation. Third, internal and external conditions for inducing the coplanar conformational structure are presented, offering guidelines for designing this conformation. Fourth, the optoelectronic applications of this segment, such as light-emitting diodes, solar cells, and field-effect transistors, are briefly summarized. Finally, a conclusion and outlook for the coplanar conformational segment regarding molecular design and applications are provided.

Enabling giant thermopower by heterostructure engineering of hydrated vanadium pentoxide for zinc ion thermal charging cells

Flexible power supply devices provide possibilities for wearable electronics in the Internet of Things. However, unsatisfying capacity or lifetime of typical batteries or capacitors seriously limit their practical applications. Different from conventional heat-to-electricity generators, zinc ion thermal charging cells has been a competitive candidate for the self-power supply solution, but the lack of promising cathode materials has restricted the achievement of promising performances. Herein, we propose an attractive cathode material by rational heterostructure engineering of hydrated vanadium pentoxide. Owing to the integration of thermodiffusion and thermoextraction effects, the thermopower is significantly improved from 7.8 ± 2.6 mV K-1 to 23.4 ± 1.5 mV K-1. Moreover, an impressive normalized power density of 1.9 mW m-2 K-2 is achieved in the quasi-solid-state cells. In addition, a wearable power supply constructed by three units can drive the commercial health monitoring system by harvesting body heat. This work demonstrates the effectiveness of electrodes design for wearable thermoelectric applications.

Improving the Performance of Layer-by-Layer Organic Solar Cells by n-Doping of the Acceptor Layer

Molecular dopants can effectively improve the performance of organic solar cells (OSCs). Here, PM6/BTP-eC9-4Cl-based OSCs are fabricated by a layer-by-layer (LbL) deposition method, and the electron acceptor BTP-eC9-4Cl layer is properly doped by n-type dopant benzyl viologen (BV) or [4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl]dimethyl-amine (N-DMBI-H). The power conversion efficiency (PCE) of OSCs increases from 16.80 to 17.61 or 17.84% when the acceptor layer is doped by BV (0.01 wt %) or N-DMBI-H (0.01 wt %), respectively. At the optimal doping concentration, the device exhibits more balanced charge transport, fewer bimolecular recombinations, faster charge separation and transfer, and better stability. This doping strategy has good universality; when the acceptor layer L8-BO of LbL OSCs is doped by 0.01 wt % BV or 0.01 wt % N-DMBI-H, the PCE increases from 17.49 to 18.35 or 18.25%, respectively. All in all, our studies have demonstrated that the doping strategy is effective in enhancing the performance of OSCs.

High-Performance n-Type Organic Thermoelectrics Enabled by Synergistically Achieving High Electron Mobility and Doping Efficiency

n-Doped polymers with high electrical conductivity (σ) are still very scarce in organic thermoelectrics (OTEs), which limits the development of efficient organic thermoelectric generators. A series of fused bithiophene imide dimer-based polymers, PO8, PO12, and PO16, incorporating distinct oligo(ethylene glycol) side-chain to optimize σ is reported here. Three polymers show a monotonic electron mobility decrease as side-chain size increasing due to the gradually lowered film crystallinity and change of backbone orientation. Interestingly, polymer PO12 with a moderate side-chain size delivers a champion σ up to 92.0 S cm-1 and a power factor (PF) as high as 94.3 µW m-1 K-2 in the series when applied in OTE devices. The PF value is among the highest ones for the solution-processing n-doped polymers. In-depth morphology studies unravel that the moderate crystallinity and the formation of 3D conduction channel derived from bimodal orientation synergistically contribute to high doping efficiency and large charge carrier mobility, thus resulting in high performance for the PO12-based OTEs. The results demonstrate the great power of simple tuning of side chain in developing n-type polymers with substantial σ for improving organic thermoelectric performance.

Doping of molecular semiconductors through proton-coupled electron transfer

The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited by the availability of dopant materials and the effects of impurities such as water. Here we focused on proton-coupled electron-transfer (PCET) reactions, which are widely used in biochemical processes3,4; their redox potentials depend on an easily handled parameter, that is, proton activity. We immersed p-type organic semiconductor thin films in aqueous solutions with PCET-based redox pairs and hydrophobic molecular ions. Synergistic reactions of PCET and ion intercalation resulted in efficient chemical doping of crystalline organic semiconductor thin films under ambient conditions. In accordance with the Nernst equation, the Fermi levels of the semiconductors were controlled reproducibly with a high degree of precision-a thermal energy of about 25 millielectronvolts at room temperature and over a few hundred millielectronvolts around the band edge. A reference-electrode-free, resistive pH sensor based on this method is also proposed. A connection between semiconductor doping and proton activity, a widely used parameter in chemical and biochemical processes, may help create a platform for ambient semiconductor processes and biomolecular electronics.

A Highly Conductive n-Type Polythiophene Derivative: Effect of Molecular Weight on n-Doping Behavior and Thermoelectric Performance

Here, we examine the impact of the molecular weight of an n-type conjugated polymer (n-PT2) on molecular doping and thermoelectric parameters. Two common dopants TDAE and N-DMBI with different doping mechanisms are used for molecular doping of n-PT2. It turns out that n-PT2 with a higher molecular weight is more miscible with the dopant, leading to more charge carriers. Moreover, the crystal structures and morphology of n-PT2 with a higher molecular weight are more tolerant against the intrusion of dopant molecules and charging. Finally, these factors work in synergy to endow the doped n-PT2 with the best conductivity and power factor (144 S cm-1/75.0 μW m-1 K-2 and 75.4 S cm-1/98.5 μW m-1 K-2 after doping by TDAE and N-DMBI, respectively). This study indicates that regulating the molecular weight allows for synergistic regulation of conductivity and Seebeck coefficient and is a feasible means to improve the performance for a given n-type organic thermoelectric material.

Extremely Electron-Withdrawing Lewis-Paired CN Groups for Organic p-Dopants

P-type chemical doping (p-doping) is a key technique to modulate the optical, electrical, and electronic properties of organic semiconductors. However, typical functional groups in organic p-dopants have insufficient electron-withdrawing strength, and the inevitable diffusion of dopants in host matrices degrades doping stabilities. Herein, we utilize extremely electron-withdrawing Lewis-paired CN groups as a new class of building blocks for designing unprecedentedly strong organic p-dopants with excellent doping stability. Various Lewis acids are paired with CN-functionalized conjugated molecules in the solution state, which strengthens the electron-withdrawing properties of CN groups almost twofold. The large dopants afford outstanding doping stability against continuous heating and long-term atmospheric exposure, which is promising for practical applications in devices. Given the broad applicability of this simple combinatorial approach, it may impact many fields of (opto)electronics.

Recent Progress in Colloidal Quantum Dot Thermoelectrics

Semiconducting colloidal quantum dots (CQDs) represent an emerging class of thermoelectric materials for use in a wide range of future applications. CQDs combine solution processability at low temperatures with the potential for upscalable manufacturing via printing techniques. Moreover, due to their low dimensionality, CQDs exhibit quantum confinement and a high density of grain boundaries, which can be independently exploited to tune the Seebeck coefficient and thermal conductivity, respectively. This unique combination of attractive attributes makes CQDs very promising for application in emerging thermoelectric generator (TEG) technologies operating near room temperature. Herein, recent progress in CQDs for application in emerging thin-film thermoelectrics is reviewed. First, the fundamental concepts of thermoelectricity in nanostructured materials are outlined, followed by an overview of the popular synthetic methods used to produce CQDs with controllable sizes and shapes. Recent strides in CQD-based thermoelectrics are then discussed with emphasis on their application in thin-film TEGs. Finally, the current challenges and future perspectives for further enhancing the performance of CQD-based thermoelectric materials for future applications are discussed.

Self-Doped n-Type Quinoidal Compounds with Good Air Stability and High Electrical Conductivity for Organic Electronics

Air stable n-type conductive molecules with high electrical conductivities and excellent device performance have important applications in organic electronics, but their synthesis remains challenging. Herein, we report three self-doped n-type conductive molecules, designated QnNs, with a closed-shell quinoidal backbone and alkyl amino chains of different lengths. The QnNs are self-doped by intermolecular electron transfer from the amino groups to the quinoidal backbone. This process is ascertained unambiguously by experiments and theoretical calculations. The use of a quinoidal structure effectively improves the self-doping level, and thus increases the electrical conductivity of self-doped n-type conductive molecules achieved by a closed-shell structure from<10-4  S cm-1 to>0.03 S cm-1 . Furthermore, the closed-shell quinoidal structure results in good air stability of the QnNs, with half-lives>73 days; and Q4N shows an electrical conductivity of 0.019 S cm-1 even after exposure to air for 120 days. When applying Q6N as the cathode interlayer in organic solar cells (OSCs), an outstanding power conversion efficiency of up to 18.2 % was obtained, which represents one the best results in binary OSCs.

Chemical Doping of Organic and Coordination Polymers for Thermoelectric and Spintronic Applications: A Theoretical Understanding

ConspectusThe controlled doping of organic semiconductors (OSCs) is crucial not only for improving the performance of electronic and optoelectronic devices but also for enabling efficient thermoelectric conversion and spintronic applications. The mechanism of doping for OSCs is fundamentally different from that of their inorganic counterparts. In particular, the interplay between dopants and host materials is complicated considering the low dielectric constant, strong lattice-charge interaction, and flexible nature of materials. Recent experimental breakthroughs in the molecular design of dopants and the precise doping with high spatial resolution call for more profound understandings as to how the dopant interacts with the charge introduced to OSCs and how the admixture of dopants alters the electronic properties of host materials before one can exploit controllable doping to realize desired functionalities.By employing state-of-the-art computational tools, we revealed the effects of doping in representative and emerging organic and coordination polymers aiming toward thermoelectric and spintronic applications. We showed that dopants and hosts should be taken as an integrated system, and the type of charge-transfer interaction between them is the key for spin polarization. First, we found doping-induced modifications to the electronic band in a potassium-doped coordination polymer, an n-type thermoelectric material. The charge localization due to the Coulomb interaction between the completely ionized dopant and the injected charge on the polymer backbone and also the polaron band formation at low doping levels are responsible for the nonmonotonic temperature dependence of the conductivity and Seebeck coefficient observed in recent experiments. The mechanistic insights gained from these results have provided important guidelines on how to control the doping level and working temperature to achieve a high thermoelectric conversion efficiency. Next, we demonstrated that the ionized dopants scatter charge carriers via screened Coulomb interactions, and it may become a dominant scattering mechanism in doped polymers. After incorporating the ionized dopant scattering mechanism in PEDOT:Tos, a p-type thermoelectric polymer, we were able to reproduce the measured Seebeck coefficient-electrical conductivity relationship spanning a wide range of doping levels, highlighting the importance of ionized dopant scattering in charge transport.In the two cases described above, charge injection is enabled by integral charge transfer between the dopant and host polymers. In a third example, we showed that a novel type of stacked two-dimensional polymer, conjugated covalent organic frameworks (COFs) with closed-shell electronic structures, can be spin polarized by iodine doping via fractional charge transfer even at high doping levels. We then manifested that magnetization can be attained in nonmagnetic materials lacking metal d electrons and further designed two new COFs with tunable spintronic structure and magnetic interactions after the iodine doping. These findings have suggested a practical route to enable spin polarization in nonradical materials by chemical doping via orbital hybridization, which holds great promise for flexible spintronic applications.

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient.

Elucidating Design Rules toward Enhanced Solid-State Charge Transport in Oligoether-Functionalized Dioxythiophene-Based Alternating Copolymers

This study investigates the solid-state charge transport properties of the oxidized forms of dioxythiophene-based alternating copolymers consisting of an oligoether-functionalized 3,4-propylenedioxythiophene (ProDOT) copolymerized with different aryl groups, dimethyl ProDOT (DMP), 3,4-ethylenedioxythiophene (EDOT), and 3,4-phenylenedioxythiophene (PheDOT), respectively, to yield copolymers P(OE3)-D, P(OE3)-E, and P(OE3)-Ph. At a dopant concentration of 5 mM FeTos₃, the electrical conductivities of these copolymers vary significantly (ranging between 9 and 195 S cm^-1) with the EDOT copolymer, P(OE3)-E, achieving the highest electrical conductivity. UV-vis-NIR and X-ray spectroscopies show differences in both susceptibility to oxidative doping and extent of oxidation for the P(OE3) series, with P(OE3)-E being the most doped. Wide-angle X-ray scattering measurements indicate that P(OE3)-E generally demonstrates the lowest paracrystallinity values in the series, as well as relatively small π-π stacking distances. The significant (i.e., order of magnitude) increase in electrical conductivity of doped P(OE3)-E films versus doped P(OE3)-D or P(OE3)-Ph films can therefore be attributed to P(OE3)-E exhibiting both the highest carrier ratios in the P(OE3) series, along with good π-π overlap and local ordering (low paracrystallinity values). Furthermore, these trends in the extent of doping and paracrystallinity are consistent with the reduced Fermi energy level and transport function prefactor parameters calculated using the semilocalized transport (SLoT) model. Observed differences in carrier ratios at the transport edge (c_t) and reduced Fermi energies [η(c)] suggest a broader electronic band (better overlap and more delocalization) for the EDOT-incorporating P(OE3)-E polymer relative to P(OE3)-D and P(OE3)-Ph. Ultimately, we rationalize improvements in electrical conductivity due to microstructural and doping enhancements caused by EDOT incorporation, a structure-property relationship worth considering in the future design of highly electrically conductive systems.

Visualizing the multi-level assembly structures of conjugated molecular systems with chain-length dependent behavior

It remains challenging to understand the structural evolution of conjugated polymers from single chains to solvated aggregates and film microstructures, although it underpins the performance of optoelectrical devices fabricated via the mainstream solution processing method. With several ensemble visual measurements, here we unravel the morphological evolution process of a model system of isoindigo-based conjugated molecules, including the hidden molecular assembly pathways, the mesoscale network formation, and their unorthodox chain dependence. Short chains show rigid chain conformations forming discrete aggregates in solution, which further grow to form a highly ordered film that exhibits poor electrical performance. In contrast, long chains exhibit flexible chain conformations, creating interlinked aggregates networks in solution, which are directly imprinted into films, forming interconnective solid-state microstructure with excellent electrical performance. Visualizing multi-level assembly structures of conjugated molecules provides a deep understanding of the inheritance of assemblies from solution to solid-state, accelerating the optimization of device fabrication.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

Density of States Engineering of n-Doped Conjugated Polymers for High Charge Transport Performances

Charge transport of conjugated polymers in functional devices closely relates to their density of states (DOS) distributions. However, systemic DOS engineering for conjugated polymers is challenging due to the lack of modulated methods and the unclear relationship between DOS and electrical properties. Here, the DOS distribution of conjugated polymers is engineered to enhance their electrical performances. The DOS distributions of polymer films are tailored using three processing solvents with different Hansen solubility parameters. The highest n-type electrical conductivity (39 ± 3 S cm^-1 ), the highest power factor (63 ± 11 µW m^-1 K^-2 ), and the highest Hall mobility (0.14 ± 0.02 cm² V^-1 s^-1 ) of the polymer (FBDPPV-OEG) are obtained in three films with three various DOS distributions, respectively. Through theoretical and experimental exploration, it is revealed that the carrier concentration and transport property of conjugated polymers can be efficiently controlled by DOS engineering, paving the way for rationally fabricating organic semiconductors.

Self-Doping Naphthalene Diimide Conjugated Polymers for Flexible Unipolar n-Type OTFTs

The development of high-performance organic thin-film transistor (OTFT) materials is vital for flexible electronics. Numerous OTFTs are so far reported but obtaining high-performance and reliable OTFTs simultaneously for flexible electronics is still challenging. Herein, it is reported that self-doping in conjugated polymer enables high unipolar n-type charge mobility in flexible OTFTs, as well as good operational/ambient stability and bending resistance. New naphthalene diimide (NDI)-conjugated polymers PNDI2T-NM17 and PNDI2T-NM50 with different contents of self-doping groups on their side chains are designed and synthesized. The effects of self-doping on the electronic properties of resulting flexible OTFTs are investigated. The results reveal that the flexible OTFTs based on self-doped PNDI2T-NM17 exhibit unipolar n-type charge-carrier properties and good operational/ambient stability thanks to the appropriate doping level and intermolecular interactions. The charge mobility and on/off ratio are fourfold and four orders of magnitude higher than those of undoped model polymer, respectively. Overall, the proposed self-doping strategy is useful for rationally designing OTFT materials with high semiconducting performance and reliability.

Boosting the Thermoelectric Performance of the Doped DPP-EDOT Conjugated Polymer by Incorporating an Ionic Additive

The thermoelectric (TE) performance of organic materials is limited by the coupling of Seebeck coefficient and electrical conductivity. Herein a new strategy is reported to boost the Seebeck coefficient of conjugated polymer without significantly reducing the electrical conductivity by incorporation of an ionic additive DPPNMe₃ Br. The doped polymer PDPP-EDOT thin film exhibits high electrical conductivity up to 1377 ± 109 S cm^-1 but low Seebeck coefficient below 30 µV K^-1 and a maximum power factor of 59 ± 10 µW m^-1 K^-2 . Interestingly, incorporation of small amount (at a molar ratio of 1:30) of DPPNMe₃ Br into PDPP-EDOT results in the significant enhancement of Seebeck coefficient along with the slight decrease of electrical conductivity after doping. Consequently, the power factor (PF) is boosted to 571 ± 38 µW m^-1 K^-2 and ZT reaches 0.28 ± 0.02 at 130 °C, which is among the highest for the reported organic TE materials. Based on the theoretical calculation, it is assumed that the enhancement of TE performance for the doped PDPP-EDOT by DPPNMe₃ Br is mainly attributed to the increase of energetic disorder for PDPP-EDOT.

Development of Alkylthiazole-Based Novel Thermoelectric Conjugated Polymers for Facile Organic Doping

In this study, we developed two novel conjugated polymers that can easily be doped with F4TCNQ organic dopants using a sequential doping method and then studied their organic thermoelectric (OTE) properties. In particular, to promote the intermolecular ordering of OTE polymers in the presence of the F4TCNQ dopant, alkylthiazole-based conjugated building blocks with highly planar backbone structures were synthesized and copolymerized. All polymers showed strong molecular ordering and edge-on orientation in the film state, even in the presence of the F4TCNQ organic dopant. Thus, the sequential doping process barely changed the molecular ordering of the polymer films while making efficient molecular doping. In addition, the doping efficiency was improved in the more π-extended polymer backbones with thienothiophene units due to the emptier space in the polymer lamellar structure to locate ionized F4TCNQ. Moreover, the study of organic thin-film transistors (OTFTs) revealed that higher hole mobility in OTFTs was the key to increasing the electrical conductivity of OTE devices fabricated using the sequential doping method.

Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications

Organic semiconductors have received broad attention and research interest due to their unique integration of semiconducting properties with structural tunability, intrinsic flexibiltiy and low cost. In order to meet the requirements of organic electronic devices and their integrated circuits, p-type, n-type and ambipolar organic semiconductors are all necessary. However, due to the limitation in both material synthesis and device fabrication, the development of n-type and ambipolar materials is quite behind that of p-type materials. Recent development in synthetic methods of organic semiconductors greatly enriches the range of n-type and ambipolar materials. Moreover, the newly developed materials with multiple functions also put forward multi-functional device applications, including some emerging research areas. In this review, we give a timely summary on these impressive advances in n-type and ambipolar organic semiconductors with a special focus on their synthesis methods and advanced materials with enhanced properties of charge carrier mobility, integration of high mobility and strong emission and thermoelectric properties. Finally, multi-functional device applications are further demonstrated as an example of these developed n-type and ambipolar materials.

Enhancing the Performance of N-Type Thermoelectric Devices via Tuning the Crystallinity of Small Molecule Semiconductors

In the development of high-performance organic thermoelectric devices, n-type materials, especially with small molecule semiconductors, lags far behind p-type materials. In this paper, three small molecules are synthesized based on electron-deficient naphthalene bis-isatin building blocks bearing different alkyl chains with the terminal functionalized with 3-ethylrhodanine unit and studied their aggregation and doping mechanism in detail. It is found that crystallinity plays an essential role in tuning the doping behavior of small molecules. Molecules with too strong crystallinity tend to aggregate with each other to form large crystalline domains, which cause significant performance degradation. While molecules with weak crystallinity can tolerate more dopants, most of them exhibit low mobility. By tuning the crystallinity carefully, organic thermoelectric devices based on C12NR can maintain high mobility and realize effective doping simultaneously, and a high power factor of 1.07 µW m^-1 K^-2 at 100 °C is realized. This delicate molecular design by modulating crystallinity provides a new avenue for realizing high-performance organic thermoelectric devices.

Extremely Suppressed Energetic Disorder in a Chemically Doped Conjugated Polymer

Chemical doping can be used to tune the optoelectronic properties of conjugated polymers (CPs), extending their applications as conducting materials. Unfortunately, chemically doped CP films containing excess dopants exhibit an increase in energetic disorder upon structural alteration, and Coulomb interactions between charge carriers and dopants also affect such disorder. The increase in energetic disorder leads to a broadening of the density of states, which consequently impedes efficient charge transport in chemically doped CPs. However, the molecular origins that are inherently resistant to such incidental increase of energetic disorder in chemically doped CPs have not been sufficiently explored. Here, it is discovered that energetic disorder in chemically doped CPs can be suppressed to a level close to the theoretical limit. Indacenodithiophene-co-benzothiadiazole (IDTBT) doped with triethyloxonium hexachloroantimonate (OA) exhibits disorder-free charge-transport characteristics and band-like transport behavior with astonishing carrier mobility as a result of reinforced 1D intramolecular transport. Molecular structure of IDTBT provides a capability to lower the energetic disorder that generally arises from the inclusion of heterogeneous dopants. The results suggest the possibilities of implementing disorder-free CPs that exhibit excellent charge transport characteristics in the chemically doped state and satisfy a prerequisite for their availability in the industry.