Electron tunneling through alkanedithiol self-assembled monolayers in large-area molecular junctions

Enabling Polymer Single Crystals to Be High-Performance Dielectric

Semicrystalline polymer dielectrics (SPDs) are highly sought-after state-of-the-art dielectric materials. As the disorder in SPDs degrades their electrical properties, homogeneously ordered SPDs are desired. However, complex crystallization behaviors of polymers make such homogeneity elusive. Polymer lamellar single crystals (PLSCs), the most regularly-ordered form of SPDs possible under mild crystallizing conditions, are ideal platforms for understanding and developing high-performance dielectric materials. Here, a typical and widely used SPD, polyethylene (PE) is selected as the model material. We successfully obtained, large, uniform, and high-quality PE PLSCs and devised a non-destructive strategy to construct PE PLSC-based vertical capacitors. These nanometer-thick capacitors exhibit exceptional dielectric properties, with a high breakdown strength of 6.95 MV/cm and a low dielectric constant of 2.14±0.07, that outperform the properties of any existing neat PE. This work provides novel insights into exploring the performance possibility of ordered SPDs and reveals the PLSCs as potential high-performance dielectric materials.

Thickness-Dependent Charge Transport in Three Dimensional Ru(II)- Tris(phenanthroline)-Based Molecular Assemblies

We describe here the fabrication of large-area molecular junctions with a configuration of ITO/[Ru(Phen)3]/Al to understand temperature- and thickness-dependent charge transport phenomena. Thanks to the electrochemical technique, thin layers of electroactive ruthenium(II)-tris(phenanthroline) [Ru(Phen)3] with thicknesses of 4-16 nm are covalently grown on sputtering-deposited patterned ITO electrodes. The bias-induced molecular junctions exhibit symmetric current-voltage (j-V) curves, demonstrating highly efficient long-range charge transport and weak attenuation with increased molecular film thickness (β = 0.70 to 0.79 nm-1). Such a lower β value is attributed to the accessibility of Ru(Phen)3 molecular conduction channels to Fermi levels of both the electrodes and a strong electronic coupling at ITO-molecules interfaces. The thinner junctions (d = 3.9 nm) follow charge transport via resonant tunneling, while the thicker junctions (d = 10-16 nm) follow thermally activated (activation energy, Ea ∼ 43 meV) Poole-Frenkel charge conduction, showing a clear "molecular signature" in the nanometric junctions.

Enhanced Triboelectric Charge Stability by Air-Stable Radicals

This paper demonstrates that air-stable radicals enhance the stability of triboelectric charge on surfaces. While charge on surfaces is often undesirable (e.g., static discharge), improved charge retention can benefit specific applications such as air filtration. Here, it is shown that self-assembled monolayers (SAMs) containing air-stable radicals, 2,2,6,6-tetramethylpiperidin-1-yl)oxidanyl (TEMPO), hold the charge longer than those without TEMPO. Charging and retention are monitored by Kelvin Probe Force Microscopy (KPFM) as a function of time. Without the radicals on the surface, charge retention increases with the water contact angle (hydrophobicity), consistent with the understanding that surface water molecules can accelerate charge dissipation. Yet, the most prolonged charge retention is observed in surfaces treated with TEMPO, which are more hydrophilic than untreated control surfaces. The charge retention decreases with reducing radical density by etching the TEMPO-silane with tetrabutylammonium fluoride (TBAF) or scavenging the radicals with ascorbic acid. These results suggest a pathway toward increasing the lifetime of triboelectric charges, which may enhance air filtration, improve tribocharging for patterning charges on surfaces, or boost triboelectric energy harvesting.

Interplay of structural chirality, electron spin and topological orbital in chiral molecular spin valves

Chirality has been a property of central importance in physics, chemistry and biology for more than a century. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive, given the negligible spin-orbit coupling (SOC) in organic molecules. In this work, we address this issue via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting SOC strengths. The experiment reveals that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure to spin polarization. Our results illustrate the essential role of SOC in the metal electrode for the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior.

Solid-State Electron Transport Through Carbon Dots Junctions: The Role of Boron and Phosphorus Doping

Carbon dots (CDs) are a new class of nanoparticles that gained widespread attention recently because of their easy preparation, water solubility, biocompatibility, and bright luminescence, leading to their integration in various applications. Despite their nm-scale and proven electron transfer capabilities, the solid-state electron transport (ETp) across single CDs was never explored. Here, a molecular junction configuration is used to explore the ETp across CDs as a function of their chemical structure using both DC-bias current-voltage and AC-bias impedance measurements. CDs are used with Nitrogen and Sulfur as exogenous atoms and doped with small amounts of Boron and Phosphorous. It is shown that the presence of P and B highly improves the ETp efficiency across the CDs, yet without an indication of a change in the dominant charge carrier. Instead, structural characterizations reveal significant changes in the chemical species across the CDs: the formation of sulfonates and graphitic Nitrogen. Temperature-dependent measurements and normalized differential conductance analysis reveal that the ETp mechanism across the CDs behaves as tunneling, which is common to all CDs used here. The study shows that the conductivity of CDs is on par with that of sophisticated molecular wires, suggesting CDs as new 'green' candidates for molecular electronics applications.

Charge Transport Measured Using the EGaIn Junction through Self-Assembled Monolayers Immersed in Organic Liquids

This paper describes measurements of charge transport by tunneling through molecular junctions comprising a self-assembled monolayer (SAM) supported by a template-stripped metal bottom electrode (M^TS), which has been immersed in an organic liquid and contacted by a conical Ga₂O₃/EGaIn top electrode. These junctions formed in organic liquids are robust; they show stabilities and yields similar to those formed in air. We formed junctions under seven external environments: (I) air, (II) perfluorocarbons, (III) linear hydrocarbons, (IV) cyclic hydrocarbons, (V) aromatic compounds, (VI) large, irregularly shaped hydrocarbons, and (VII) dimethyl siloxanes. Several different lengths of SAMs of n-alkanethiolates, S(CH₂)_n-1CH₃ with n = 4-18, and two different kinds of bottom electrodes (Ag^TS or Au^TS) are employed to assess the mechanism underlying the observed changes in tunneling currents. Measurements of current density through junctions immersed in perfluorocarbons (II) are comparable to junctions measured in air. Junctions immersed in other organic liquids show reductions in the values of current density, compared to the values in air, ranging from 1 (III) to 5 orders of magnitude (IV). We interpret the most plausible mechanism for these reductions in current densities to be an increase in the length of the tunneling pathway, reflecting the formation of thin (0.5-1.5 nm) liquid films at the interface between the SAM and the Ga₂O₃/EGaIn electrode. Remarkably, the thickness of the liquid film─estimated by the simplified Simmons model, measurements of electrical breakdown of the junction, and simulations of molecular dynamics─is consistent with the existing observations of structured liquid layers that form between two flat interfaces from measurements obtained by the surface force apparatus. These results suggest the use of the EGaIn junction and measurements of charge transport by tunneling as a new form of surface analysis, with the applications in the study of near-surface, weak, molecular interactions and the behavior of liquid films adjacent to non-polar interfaces.

High-Temperature Electronic Transport Properties of PEDOT:PSS Top-Contact Molecular Junctions with Oligophenylene Dithiols

In this study, we investigated the high-temperature electronic transport behavior of spin-coated PEDOT:PSS top-contact molecular ensemble junctions based on self-assembled monolayers (SAMs) of oligophenylene dithiols. We observed irreversible temperature-dependent charge transport at the high-temperature regime over 320 K. The effective contact resistance and normalized resistance decreased with increasing temperature (320 to 400 K), whereas the tunneling attenuation factor was nearly constant irrespective of temperature change. These findings demonstrate that the high-temperature transport properties are not dominated by the integrity of SAMs in molecular junctions, but rather the PEDOT:PSS/SAMs contact. Transition voltage spectroscopy measurements indicated that the contact barrier height of the PEDOT:PSS/SAMs is lowered at elevated temperatures, which gives rise to a decrease in the contact resistance and normalized resistance. The high-temperature charge transport through these junctions is also related to an increase in the grain area of PEDOT cores after thermal treatment. Moreover, it was found that there was no significant change in either the current density or normalized resistance of the annealed junctions after 60 days of storage in ambient conditions.

Bias-Voltage Dependence of Tunneling Decay Coefficient and Barrier Height in Arylalkane Molecular Junctions with Graphene Contacts as a Protecting Interlayer

We studied a molecular junction with arylalkane self-assembled monolayers sandwiched between two graphene contacts. The arrangement of graphene-based molecular junctions provides a stable device structure with a high yield and allows for extensive transport measurements at 78 K. We observed a temperature-independent current density–voltage (J–V) characteristic and the exponential dependency of the current density on the molecular length, proving that the charge transport occurs by non-resonant tunneling through the molecular barrier. Based on the Simmons model, the bias-voltage dependence of the decay coefficient and barrier height was extracted from variable-length transport characterizations. The J–V data measured were simulated by the Simmons model, which was modified with the barrier lowering induced by the bias voltage. Indeed, there isno need for adjustable fitting parameters. The resulting simulation was in remarkable consistency with experimental measurements over a full bias range up to |V| ≤ 1.5 V for the case of graphene/arylalkane/graphene heterojunctions. Our findings clearly showed the demonstration of stable and reliable molecular junctions with graphene contacts and their intrinsic charge transport characteristics, as well as justifying the application of the voltage-induced barrier lowering approximation to the graphene-based molecular junction.

Conformation- and phosphorylation-dependent electron tunnelling across self-assembled monolayers of tau peptides

We report on charge transport across self-assembled monolayers (SAMs) of short tau peptides by probing the electron tunneling rates and quantum mechanical simulation. We measured the electron tunneling rates across SAMs of carboxyl-terminated linker molecules (C₆H₁₂O₂S) and short cis-tau (CT) and trans-tau (TT) peptides, supported on template-stripped gold (Au^TS) bottom electrode, with Eutectic Gallium-Indium (EGaIn)(EGaIn) top electrode. Measurements of the current density across thousands of Au^TS/linker/tau//Ga₂O₃/EGaIn single-molecule junctions show that the tunneling current across CT peptide is one order of magnitude lower than that of TT peptide. Quantum mechanical simulation demonstrated a wider energy bandgap of the CT peptide, as compared to the TT peptide, which causes a reduction in its electron tunneling current. Our findings also revealed the critical role of phosphorylation in altering the charge transport characteristics of short peptides; more specifically, we found that the presence of phosphate groups can reduce the energy band gap in tau peptides and alter their electrical properties. Our results suggest that conformational and phosphorylation of short peptides (e.g., tau) can significantly change their charge transport characteristics and energy levels.

Molecular Platform for Fast Low-Voltage Nanoelectromechanical Switching

The use of molecules as active components to build nanometer-scale devices inspires emerging device concepts that employ the intrinsic functionality of molecules to address longstanding challenges facing nanoelectronics. Using molecules as controllable-length nanosprings, here we report the design and operation of a nanoelectromechanical (NEM) switch which overcomes the typical challenges of high actuation voltages and slow switching speeds for previous NEM technologies. Our NEM switches are hierarchically assembled using a molecular spacer layer sandwiched between atomically smooth electrodes, which defines a nanometer-scale electrode gap and can be electrostatically compressed to repeatedly modulate the tunneling current. The molecular layer and the top electrode structure serve as two degrees of design freedom with which to independently tailor static and dynamic device characteristics, enabling simultaneous low turn-on voltages (sub-3 V) and short switching delays (2 ns). This molecular platform with inherent nanoscale modularity provides a versatile strategy for engineering diverse high-performance and energy-efficient electromechanical devices.

Molecular Conformation in Charge Tunneling across Large-Area Junctions

Self-assembled monolayers are predicated on thermodynamic equilibrium; hence, their properties project accessible relaxation pathways. Herein, we demonstrate that charge tunneling correlates with conformational degrees of freedom(s). Results from open chain and cyclic head groups show that, as expected, distribution in tunneling data correlates with the orientation of the head group, akin to the odd-even effect and more importantly the degree of conformational freedom, but fluctuates with applied bias. Trends in nature of distributions in current density illuminate the need for higher statistical moments in understanding these rather dynamic systems. We employ skewness, kurtosis, and estimation plots to show that the conformational degree of freedom in the head group significantly amplifies the odd-even effect and may lead to enhanced or perturbed tunneling based on whether the head group is on an odd- or even-parity spacer.

Molecular bridge-mediated ultralow-power gas sensing

We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.5 nm ALD SiO₂), which is notched ~10 nm into the stack between the gold electrodes. The exposed gold surface is functionalized with a self-assembled monolayer (SAM) of conjugated thiol linker molecules. When the device is exposed to a target gas (1,5-diaminopentane), the SAM layer electrostatically captures the target gas molecules, forming a molecular bridge across the nanogap. The gas capture lowers the barrier potential for electron tunneling across the notched edge region, from ~5 eV to ~0.9 eV and establishes additional conducting paths for charge transport between the gold electrodes, leading to a substantial decrease in junction resistance. We demonstrated an output resistance change of >10⁸ times upon exposure to 80 ppm diamine target gas as well as ultralow standby power consumption of <15 pW, confirming electron tunneling through molecular bridges for ultralow-power gas sensing.

Molecular Origin of the Odd-Even Effect of Macroscopic Properties of n-Alkanethiolate Self-Assembled Monolayers: Bulk or Interface?

Elucidating the influence of the monolayer interface versus bulk on the macroscopic properties (e.g., surface hydrophobicity, charge transport, and electron transfer) of organic self-assembled monolayers (SAMs) chemically anchored to metal surfaces is a challenge. This article reports the characterization of prototypical SAMs of n-alkanethiolates on gold (CH₃(CH₂)_nSAu, n = 6-19) at the macroscopic scale by electrochemical impedance spectroscopy and contact angle goniometry, and at the molecular level, by infrared reflection absorption spectroscopy. The SAM capacitance, dielectric constant, and surface hydrophobicity exhibit dependencies on both the length (n) and parity (n_odd or n_even) of the polymethylene chain. The peak positions of the CH₂ stretching modes indicate a progressive increase in the chain conformational order with increasing n between n = 6 and 16. SAMs of n_odd have a greater degree of structural gauche defects than SAMs of n_even. The peak intensities and positions of the CH₃ stretching modes are chain length independent but show an odd-even alternation of the spatial orientation of the terminal CH₃. The correlations between the different data trends establish that the chain length dependencies of the dielectric constant and surface hydrophobicity originate from changes in the polymethylene chain conformation (bulk), while the odd-even variation arises primarily from a difference in the chemical composition of the interface related to the terminal group orientation. These findings provide new physical insights into the structure-property relation of SAMs for the design of ultrathin film dielectrics as well as the understanding of stereostructural effects on the electrical characteristics of tunnel junctions.

Protective Layers Based on Carbon Paint To Yield High-Quality Large-Area Molecular Junctions with Low Contact Resistance

A major obstacle for transforming large-area molecular junctions into a viable technology is the deposition of a top, metallic contact over the self-assembled monolayer (SAM) without chemically damaging the molecules and preventing an interface-limited charge transport. Often a thin conducting layer is softly deposited over the SAM to protect it during the deposition of the metal electrode which requires conditions under which organic molecules are not stable. We report a new protective layer based on carbon paint which is highly conductive and has metallic-like behavior. Junctions made of SAMs of n-alkanethiolates supported by Au were characterized with both dc and ac techniques, revealing that carbon paint protective layers provide a solution to three well-known challenges in molecular junctions: series resistance of the leads, poor interface conductance, and low effective contact area related to the roughness of the interfaces. Transport is constant with coherent tunneling down to 10 K, indicating the carbon paint does not add spurious thermally activated components. The junctions have both high reproducibility and good stability against bias stressing. Finally, normalized differential conductance analysis of the tunneling characteristics of the junctions as a function of molecular length reveals that the scaling voltage changes with molecular length, indicating a significant voltage drop on the molecules rather than on the molecule-electrode interface. There is a clear inverse dependence of the scaling voltage on length, which we deduced has a tunneling barrier height of close to 2 eV. The paper establishes the reliability of carbon paint protective layers and provides a procedure for discriminating genuine molecular effects from interfacial contributions.

Energy Level Alignment in Molecular Tunnel Junctions by Transport and Spectroscopy: Self-Consistency for the Case of Alkyl Thiols and Dithiols on Ag, Au, and Pt Electrodes

We report here an extensive study of transport and electronic structure of molecular junctions based on alkyl thiols (CnT; n = 7, 8, 9, 10, 12) and dithiols (CnDT; n = 8, 9, 10) with various lengths contacted with different metal electrodes (Ag, Au, Pt). The dependence of the low-bias resistance (R) on contact work function indicates that transport is HOMO-assisted (p-type transport). Analysis of the current-voltage (I-V) characteristics for CnT and CnDT tunnel junctions with the analytical single-level model (SLM) provides both the HOMO-Fermi energy offset ε_h^trans and the average molecule-electrode coupling (Γ) as a function of molecular length (n), electrode work function (Φ), and the number of chemical contacts (one or two). The SLM analysis reveals a strong Fermi level (E_F) pinning effect in all the junctions, i.e., ε_h^trans changes very little with n, Φ, and the number of chemical contacts, but Γ depends strongly on these variables. Significantly, independent measurements of the HOMO-Fermi level offset (ε_h^UPS) by ultraviolet photoelectron spectroscopy (UPS) for CnT and CnDT SAMs agree remarkably well with the transport-estimated ε_h^trans. This result provides strong evidence for hole transport mediated by localized HOMO states at the Au-thiol interface, and not by the delocalized σ states in the C-C backbones, clarifying a long-standing issue in molecular electronics. Our results also substantiate the application of the single-level model for quantitative, unified understanding of transport in benchmark molecular junctions.

Nanoparticle Linker-Controlled Molecular Wire Devices Based on Double Molecular Monolayers

Highly conductive molecular wires are an important component for realizing molecular electronic devices and have to be explored in terms of interactions between molecules and electrodes in their molecular junctions. Here, new molecular wire junctions are reported to enhance charge transport through gold nanoparticle (AuNP)-linked double self-assembled monolayers (SAMs) of cobalt (II) bis-terpyridine molecules (e.g., Co(II)(tpyphS)₂ ). Electrical characteristics of the double-SAM devices are explored in terms of the existence of AuNP. The AuNP linker in the Co(II)(tpyphS)₂ -AuNP-Co(II)(tpyphS)₂ junction acts as an electronic contact that is transparent to electrons. The weak temperature dependency of the AuNP-linked molecular junctions strongly indicates sequential tunneling conduction through the highest occupied molecular orbitals (HOMOs) of Co(II)(tpyphS)₂ molecules. The electrochemical characteristics of the AuNP-Co(II)(tpyphS)₂ SAMs reveal fast electron transfer through molecules linked by AuNP. Density functional theory calculations reveal that the molecular HOMO levels are dominantly affected by the formation of junctions. The intermolecular charge transport, controlled by the AuNP linker, can provide a rational design for molecular connection that achieves a reliable electrical connectivity of molecular electronic components for construction of molecular electronic circuits.

Molecularly Controlled Stark Effect Induces Significant Rectification in Polycyclic-Aromatic-Hydrocarbon-Terminated n-Alkanethiolates

The variation of the electronic structure of individual molecules as a function of the applied bias matters for the performance of molecular and organic electronic devices. Understanding the structure-electric-field relationship, however, remains a challenge because of the lack of in-operando spectroscopic technique and complexity arising from the ill-defined on-surface structure of molecules and organic-electrode interfaces within devices. We report that a reliable and reproducible molecular diode can be achieved by control of the conjugation length in polycyclic-aromatic-hydrocarbon (PAH)-terminated n-alkanethiolate (denoted as SC₁₁PAH), incorporated into liquid-metal-based large-area tunnel junctions in the form of a self-assembled monolayer. By taking advantage of the structural simplicity and tunability of SC₁₁PAH and the high-yielding feature of the junction technique, we demonstrate that the increase in the conjugation length of the PAH terminal group leads to a significant rectification ratio up to ∼1.7 × 10² at ±740 mV. Further study suggests that the Stark shift of the molecular energy resonance of the PAH breaks the symmetry of the energy topography across the junction and induces rectification in a temperature-independent charge-transport regime.

Large-Area All-Carbon Nanocapacitors from Graphene and Carbon Nanomembranes

We report on the fabrication of large-area all-carbon capacitors (ACCs) composed of multilayer stacks of carbon nanomembranes as dielectrics sandwiched between two carbon-based conducting electrodes. Carbon nanomembranes (CNMs) are prepared from aromatic self-assembled monolayers of phenylthiol homologues via electron irradiation. Two types of carbon-based electrode materials, (1) trilayer graphene made by chemical vapor deposition and mechanical stacking and (2) pyrolyzed graphitic carbon made by pyrolysis of cross-linked aromatic molecules, have been employed for this study. The capacitor area is defined by the width of electrode ribbons, and the separation between two electrodes is tuned by the number of CNM layers. Working ACCs with an area of up to 1200 μm² were successfully fabricated by a combination of bottom-up molecular self-assembly and top-down lithographic approaches. Then ACCs were characterized by Raman spectroscopy, helium ion microscopy, and impedance spectroscopy. A dielectric constant of 3.5 and an average capacitance density of 0.3 μF/cm² were derived from the obtained capacitances. A dielectric strength of 3.2 MV/cm was determined for CNMs embedded in graphene electrodes with the interfacial capacitance being taken into account. These results show the potential of carbon nanomembranes to be used as dielectric components in next-generation environment-friendly carbon-based energy storage devices.

Molecular signature of polyoxometalates in electron transport of silicon-based molecular junctions

Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic-inorganic polyoxometalate hybrids [PM11O39{Sn(C6H4)C[triple bond, length as m-dash]C(C6H4)N2}]3- (M = Mo, W) endowed with a remote diazonium function is reported together with their covalent immobilization onto hydrogenated n-Si(100) substrates. Electron transport measurements through the resulting densely-packed monolayers contacted with a mercury drop as a top electrode confirms their homogeneity. Adjustment of the current-voltage curves with the Simmon's equation gives a mean tunnel energy barrier ΦPOM of 1.8 eV and 1.6 eV, for the Silicon-Molecules-Metal (SMM) junctions based on the polyoxotungstates (M = W) and polyoxomolybdates (M = Mo), respectively. This follows the trend observed in the electrochemical properties of POMs in solution, the polyoxomolybdates being easier to reduce than the polyoxotungstates, in agreement with lowest unoccupied molecular orbitals (LUMOs) of lower energy. The molecular signature of the POMs is thus clearly identifiable in the solid-state electrical properties and the unmatched diversity of POM molecular and electronic structures should offer a great modularity.

Understanding interface (odd–even) effects in charge tunneling using a polished EGaIn electrode

Charge transport across large area molecular tunneling junctions is widely studied due to its potential in the development of quantum electronic devices.

Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied. Usually, junctions are characterized by two-terminal current–voltage measurements where only the total current across the junction is measured, but with these methods one cannot distinguish how the individual components of the junctions are altered by the defects. Here we show that the roughness of the bottom-electrode is a crucial factor in determining the electrical properties of self-assembled monolayer (SAM)-based junctions. We used potentiodynamic impedance spectroscopy to reveal which components of the junctions are altered by defective bottom electrodes because this method allows for direct determination of all components that impede charge transport in the equivalent circuit of the junctions. We intentionally introduced defects via the roughness of the bottom electrode and found that these defects lower the SAM resistance but they do not alter the capacitance of the SAM or the contact resistance of the junction. In other words, defective junctions can be seen as “leaky capacitors” resulting in an underestimation of the SAM resistance of two orders of magnitude. These results help to improve the interpretation of data generated by SAM-based junctions and explain in part the observed large spread of reported tunneling rates for the same molecules measured across different platforms.

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied.

Functional Molecular Junctions Derived from Double Self-Assembled Monolayers

Information processing using molecular junctions is becoming more important as devices are miniaturized to the nanoscale. Herein, we report functional molecular junctions derived from double self-assembled monolayers (SAMs) intercalated between soft graphene electrodes. Newly assembled molecular junctions are fabricated by placing a molecular SAM/(top) electrode on another molecular SAM/(bottom) electrode by using a contact-assembly technique. Double SAMs can provide tunneling conjugation across the van der Waals gap between the terminals of each monolayer and exhibit new electrical functions. Robust contact-assembled molecular junctions can act as platforms for the development of equivalent contact molecular junctions between top and bottom electrodes, which can be applied independently to different kinds of molecules to enhance either the structural complexity or the assembly properties of molecules.

High-Yield Functional Molecular Electronic Devices

An ultimate goal of molecular electronics, which seeks to incorporate molecular components into electronic circuit units, is to generate functional molecular electronic devices using individual or ensemble molecules to fulfill the increasing technical demands of the miniaturization of traditional silicon-based electronics. This review article presents a summary of recent efforts to pursue this ultimate aim, covering the development of reliable device platforms for high-yield ensemble molecular junctions and their utilization in functional molecular electronic devices, in which distinctive electronic functionalities are observed due to the functional molecules. In addition, other aspects pertaining to the practical application of molecular devices such as manufacturing compatibility with existing complementary metal-oxide-semiconductor technology, their integration, and flexible device applications are also discussed. These advances may contribute to a deeper understanding of charge transport characteristics through functional molecular junctions and provide a desirable roadmap for future practical molecular electronics applications.

Quantum state readout of individual quantum dots by electrostatic force detection

Electric charge detection by atomic force microscopy (AFM) with single-electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QDs). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and damping of the AFM cantilever, enabling electrometry with a single-electron sensitivity. Quantitative electronic level spectroscopy is possible by sweeping the bias voltage. Charge stability diagram can be obtained by scanning the AFM tip around the QD. e-EFM technique enables to investigate individual colloidal nanoparticles and self-assembled QDs without nanoscale electrodes. e-EFM is a quantum electromechanical system where the back-action of a tunneling electron is detected by AFM; it can also be considered as a mechanical analog of admittance spectroscopy with a radio frequency resonator, which is emerging as a promising tool for quantum state readout for quantum computing. In combination with the topography imaging capability of the AFM, e-EFM is a powerful tool for investigating new nanoscale material systems which can be used as quantum bits.

Modulation and Control of Charge Transport Through Single-Molecule Junctions

The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge transport. In addition, the development of advanced data analysis methods is considered, as they are critical to gaining detailed physical insight into the underlying transport mechanisms.

Chemical control over the energy-level alignment in a two-terminal junction

The energy-level alignment of molecular transistors can be controlled by external gating to move molecular orbitals with respect to the Fermi levels of the source and drain electrodes. Two-terminal molecular tunnelling junctions, however, lack a gate electrode and suffer from Fermi-level pinning, making it difficult to control the energy-level alignment of the system. Here we report an enhancement of 2 orders of magnitude of the tunnelling current in a two-terminal junction via chemical molecular orbital control, changing chemically the molecular component between a stable radical and its non-radical form without altering the supramolecular structure of the junction. Our findings demonstrate that the energy-level alignment in self-assembled monolayer-based junctions can be regulated by purely chemical modifications, which seems an attractive alternative to control the electrical properties of two-terminal junctions.

Electron tunneling through molecule-electrode contacts of single alkane molecular junctions: experimental determination and a practical barrier model

An advanced understanding of the molecule-electrode contact interfaces of single-molecule junctions is a necessity for real world application of future single-molecule devices. This study aims to elucidate the change in the contact tunnelling barrier induced by junction extension and how this change affects the resulting junction conductance. The contact barrier of Au-octanedithiol/octanediamine-Au junctions was studied under triangle (TRI) mechanical modulations using the modified scanning tunneling microscopy (STM) break junction technique. The experimental results reveal that as the junction separation extends, the contact barrier of octanedithiol follows a unique trend, a linear increase followed by a plateau in barrier height, which is in contrast to that of octanediamine, a nearly rectangle barrier. We propose a modified contact barrier model for the unique barrier shape of octanedithiol, based on which the calculation agrees well with the experimental data. This study shows unprecedented experimental features of the molecule-electrode contact barrier of single-molecule junctions and provides new insights into the nature of contact effect in determining electron transport through single-molecule junctions.

Musical molecules: the molecular junction as an active component in audio distortion circuits

Molecular junctions that have a non-linear current-voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars. The performance of large-area molecular junctions fabricated at the wafer level is compared to currently standard semiconductor diode clippers, showing a difference in the sound character. The harmonic distributions resulting from the use of traditional and molecular clipping elements are reported and discussed, and differences in performance are noted that result from the underlying physics that controls the electronic properties of each clipping component. In addition, the ability to tune the sound using the molecular junction is demonstrated. Finally, the hybrid circuit is compared to an overdriven tube amplifier, which has been the standard reference electric guitar clipped tone for over 60 years. In order to investigate the feasibility of manufacturing molecular junctions for use in commercial applications, devices are fabricated using a low-density format at the wafer level, where 38 dies per wafer, each containing two molecular junctions, are made with exceptional non-shorted yield (99.4%, representing 718 out of 722 tested devices) without requiring clean room facilities.

Noncovalent Self-Assembled Monolayers on Graphene as a Highly Stable Platform for Molecular Tunnel Junctions

Monolayer graphene is used as the bottom electrode to fabricate stable and high-quality self-assembled monolayer (SAM)-based tunnel junctions. The SAMs are formed on graphene via noncovalent bonds without altering the structure of the graphene. This work paves the way to new types of molecular electronic junctions based on 2D materials.

One-Nanometer Thin Monolayers Remove the Deleterious Effect of Substrate Defects in Molecular Tunnel Junctions

Defects in self-assembled monolayer (SAMs) based junctions cause the largest deviation between predicted and measured values of the tunnelling current. We report the remarkable, seemingly counterintuitive finding that shorter, less-ordered SAMs provide, unlike taller crystalline-like SAMs, higher quality tunnelling barriers on defective substrates, which points to self-repair of liquid-like SAMs on defects. The molecular dynamics show that short-chain molecules can more easily rotate into low-density boundary regions and smoothen out defects than thick solid-like SAMs. Our findings point to an attractive means of removing their deleterious effects simply by using flexible molecules.

Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films

Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

Probing the nature and resistance of the molecule-electrode contact in SAM-based junctions

It is challenging to quantify the contact resistance and to determine the nature of the molecule-electrode contacts in molecular two-terminal junctions. Here we show that potentiodynamic and temperature dependent impedance measurements give insights into the nature of the SAM-electrode interface and other bottlenecks of charge transport (the capacitance of the SAM (C(SAM)) and the resistance of the SAM (R(SAM))), unlike DC methods, independently of each other. We found that the resistance of the top-electrode-SAM contact for junctions with the form of Ag(TS)-SC(n)//GaO(x)/EGaIn with n = 10, 12, 14, 16 or 18 is bias and temperature independent and hence Ohmic (non-rectifying) in nature, and is orders of magnitude smaller than R(SAM). The C(SAM) and R(SAM) are independent of the temperature, indicating that the mechanism of charge transport in these SAM-based junctions is coherent tunneling and the charge carrier trapping at the interfaces is negligible.

Closed-loop conductance scanning tunneling spectroscopy: demonstrating the equivalence to the open-loop alternative

We demonstrate the validity of using closed-loop z(V) conductance scanning tunneling spectroscopy (STS) measurements for the determination of the effective tunneling barrier by comparing them to more conventional open-loop I(z) measurements. Through the development of a numerical model, the individual contributions to the effective tunneling barrier present in these experiments, such as the work function and the presence of an image charge, are determined quantitatively. This opens up the possibility of determining tunneling barriers of both vacuum and molecular systems in an alternative and more detailed manner.

Electronic transport regimes through an alkoxythiolated diphenyl-2,2'-bithiophene-based molecular junction diodes: critical assessment of the thermal dependence

The detailed understanding of electronic transport through a single molecule or an ensemble of self-assembled molecules embedded between two metallic leads is still a matter of controversy. Multiple factors influence the charge transport in the molecular junction, with particular attention to be given to the band states of the electrodes, molecular orbital energies, bias potential and importantly molecule-electrode electronic coupling. Moreover it is not trivial to disentangle molecular contributions from other possible conduction pathways directly coupling the opposite electrodes. We here investigate the electronic transport properties of an ensemble molecular junction embedding an alkylthiol derivative of a diphenol substituted bithiophene (DPBT) by means of current vs. voltage and temperature dependent measurements. We explored different junction configurations using: micropores (Au//DPBT//Au and Au//DPBT-polymer conductor//Au) and conductive-atomic force microscopy (c-AFM). In all cases, we found a transition voltage V(T) of ∼0.35 V. The consistent presence of a similar V(T) in all the tested configurations is a strong, but not conclusive, indication of a molecular signature in the charge transport, which we assessed and confirmed by temperature dependent measurements. We found a transition from an incoherent resonant tunneling at low biases and close to room temperature, where transport is thermally activated with an activation energy of ∼85 meV, to a coherent tunneling at voltages higher than V(T). Unlike many other molecular junctions reported in the literature, resonant conditions commonly attributed to a hopping transport regime can be found already at room temperature and very low biases for a molecule only ∼1.5 nm long. This paper is the first report to clearly show temperature activated transport through a short and not fully conjugated molecule. Moreover, we could clearly identify a regime at low temperatures and low bias where the transport mechanism is controlled by the thermal conductivity of the metal electrodes rather than the molecule.

Maximizing the dielectric response of molecular thin films via quantum chemical design

Developing high-capacitance organic gate dielectrics is critical for advances in electronic circuitry based on unconventional semiconductors. While high-dielectric constant molecular substances are known, the mechanism of dielectric response and the fundamental chemical design principles are not well understood. Using a plane-wave density functional theory formalism, we show that it is possible to map the atomic-scale dielectric profiles of molecule-based materials while capturing important bulk characteristics. For molecular films, this approach reveals how basic materials properties such as surface coverage density, molecular tilt angle, and π-system planarity can dramatically influence dielectric response. Additionally, relatively modest molecular backbone and substituent variations can be employed to substantially enhance film dielectric response. For dense surface coverages and proper molecular alignment, conjugated hydrocarbon chains can achieve dielectric constants of >8.0, more than 3 times that of analogous saturated chains, ∼2.5. However, this conjugation-related dielectric enhancement depends on proper molecular orientation and planarization, with enhancements up to 60% for proper molecular alignment with the applied field and an additional 30% for conformations such as coplanarity in extended π-systems. Conjugation length is not the only determinant of dielectric response, and appended polarizable high-Z substituents can increase molecular film response more than 2-fold, affording estimated capacitances of >9.0 μF/cm2. However, in large π-systems, polar substituent effects are substantially attenuated.

Orbital Topology Controlling Charge Injection in Quantum-Dot-Sensitized Solar Cells

Quantum-dot-sensitized solar cells are emerging as a promising development of dye-sensitized solar cells, where photostable semiconductor quantum dots replace molecular dyes. Upon photoexcitation of a quantum dot, an electron is transferred to a high-band-gap metal oxide. Swift electron transfer is crucial to ensure a high overall efficiency of the solar cell. Using femtosecond time-resolved spectroscopy, we find the rate of electron transfer to be surprisingly sensitive to the chemical structure of the linker molecules that attach the quantum dots to the metal oxide. A rectangular barrier model is unable to capture the observed variation. Applying bridge-mediated electron-transfer theory, we find that the electron-transfer rates depend on the topology of the frontier orbital of the molecular linker. This promises the capability of fine tuning the electron-transfer rates by rational design of the linker molecules.