1
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Howarth J, Vaklinova K, Grzeszczyk M, Baldi G, Hague L, Potemski M, Novoselov KS, Kozikov A, Koperski M. Electroluminescent vertical tunneling junctions based on WSe 2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields. Proc Natl Acad Sci U S A 2024; 121:e2401757121. [PMID: 38820004 PMCID: PMC11161753 DOI: 10.1073/pnas.2401757121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Accepted: 04/29/2024] [Indexed: 06/02/2024] Open
Abstract
We experimentally demonstrate the creation of defects in monolayer WSe2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light-emitting diodes based on WSe2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.
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Affiliation(s)
- James Howarth
- School of Physics and Astronomy, University of Manchester, ManchesterM13 9PL, United Kingdom
| | - Kristina Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
| | - Magdalena Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
| | - Giulio Baldi
- Department of Physics, National University of Singapore, Singapore119077, Singapore
| | - Lee Hague
- School of Physics and Astronomy, University of Manchester, ManchesterM13 9PL, United Kingdom
| | - Marek Potemski
- Laboratoire National des Champs Magnétiques Intenses, CNRS-Université Grenoble Alpes-Université Paul Sabatier-Institut National des Sciences Appliquées Toulouse, Grenoble38042, France
- Center for Terahertz Research and Applications Labs, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw01-142, Poland
| | - Kostya S. Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore
| | - Aleksey Kozikov
- Faculty of Science, Agriculture & Engineering, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle Upon TyneNE1 7RU, United Kingdom
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore117544, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore
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2
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Torres-Davila FE, Chagoya KL, Blanco EE, Shahzad S, Shultz-Johnson LR, Mogensen M, Gesquiere A, Jurca T, Rochdi N, Blair RG, Tetard L. Room temperature 3D carbon microprinting. Nat Commun 2024; 15:2745. [PMID: 38553437 PMCID: PMC10980711 DOI: 10.1038/s41467-024-47076-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 03/14/2024] [Indexed: 04/02/2024] Open
Abstract
Manufacturing custom three-dimensional (3D) carbon functional materials is of utmost importance for applications ranging from electronics and energy devices to medicine, and beyond. In lieu of viable eco-friendly synthesis pathways, conventional methods of carbon growth involve energy-intensive processes with inherent limitations of substrate compatibility. The yearning to produce complex structures, with ultra-high aspect ratios, further impedes the quest for eco-friendly and scalable paths toward 3D carbon-based materials patterning. Here, we demonstrate a facile process for carbon 3D printing at room temperature, using low-power visible light and a metal-free catalyst. Within seconds to minutes, this one-step photocatalytic growth yields rod-shaped microstructures with aspect ratios up to ~500 and diameters below 10 μm. The approach enables the rapid patterning of centimeter-size arrays of rods with tunable height and pitch, and of custom complex 3D structures. The patterned structures exhibit appealing luminescence properties and ohmic behavior, with great potential for optoelectronics and sensing applications, including those interfacing with biological systems.
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Affiliation(s)
- Fernand E Torres-Davila
- NanoScience Technology Center, University of Central Florida, Orlando, FL, USA
- Department of Physics, University of Central Florida, Orlando, FL, USA
| | - Katerina L Chagoya
- Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL, USA
| | - Emma E Blanco
- Department of Chemistry, University of Central Florida, Orlando, FL, USA
| | - Saqib Shahzad
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL, USA
| | | | - Mirra Mogensen
- NanoScience Technology Center, University of Central Florida, Orlando, FL, USA
- Department of Chemistry, University of Central Florida, Orlando, FL, USA
| | - Andre Gesquiere
- NanoScience Technology Center, University of Central Florida, Orlando, FL, USA
- Department of Chemistry, University of Central Florida, Orlando, FL, USA
| | - Titel Jurca
- NanoScience Technology Center, University of Central Florida, Orlando, FL, USA
- Department of Chemistry, University of Central Florida, Orlando, FL, USA
- Renewable Energy and Chemical Transformations (REACT) Cluster, University of Central Florida, Orlando, FL, USA
| | - Nabil Rochdi
- Laboratory of Innovative Materials, Energy and Sustainable Development (IMED-Lab), Cadi Ayyad University, Marrakesh, Morocco
- Department of Physics, Faculty of Sciences Semlalia, Cadi Ayyad University, Marrakesh, Morocco
| | - Richard G Blair
- Renewable Energy and Chemical Transformations (REACT) Cluster, University of Central Florida, Orlando, FL, USA.
- Florida Space Institute, University of Central Florida, Orlando, FL, USA.
| | - Laurene Tetard
- NanoScience Technology Center, University of Central Florida, Orlando, FL, USA.
- Department of Physics, University of Central Florida, Orlando, FL, USA.
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3
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Yang Y, Xu K, Holtzman LN, Yang K, Watanabe K, Taniguchi T, Hone J, Barmak K, Rosenberger MR. Atomic Defect Quantification by Lateral Force Microscopy. ACS NANO 2024; 18:6887-6895. [PMID: 38386278 DOI: 10.1021/acsnano.3c07405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic properties, such as doping and single photon emission. An understanding of defect-property relationships is essential for optimizing material performance. However, progress in understanding these critical relationships is hindered by a lack of straightforward approaches for accurate, precise, and reliable defect quantification on the nanoscale, especially for insulating materials. Here, we demonstrate that lateral force microscopy (LFM), a mechanical technique, can observe atomic defects in semiconducting and insulating 2D materials under ambient conditions. We first improve the sensitivity of LFM through consideration of cantilever mechanics. With the improved sensitivity, we use LFM to locate atomic-scale point defects on the surface of bulk MoSe2. By directly comparing LFM and conductive atomic force microscopy (CAFM) measurements on bulk MoSe2, we demonstrate that point defects observed with LFM are atomic defects in the crystal. As a mechanical technique, LFM does not require a conductive pathway, which allows defect characterization on insulating materials, such as hexagonal boron nitride (hBN). We demonstrate the ability to observe intrinsic defects in hBN and defects introduced by annealing. Our demonstration of LFM as a mechanical defect characterization technique applicable to both conductive and insulating 2D materials will enable routine defect-property determination and accelerate materials research.
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Affiliation(s)
- Yucheng Yang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kaikui Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Kristyna Yang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Matthew R Rosenberger
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
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4
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Badrtdinov DI, Rodriguez-Fernandez C, Grzeszczyk M, Qiu Z, Vaklinova K, Huang P, Hampel A, Watanabe K, Taniguchi T, Jiong L, Potemski M, Dreyer CE, Koperski M, Rösner M. Dielectric Environment Sensitivity of Carbon Centers in Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300144. [PMID: 37329196 DOI: 10.1002/smll.202300144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Revised: 06/01/2023] [Indexed: 06/18/2023]
Abstract
A key advantage of utilizing van-der-Waals (vdW) materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrate allowing for improved light extraction, enhanced coupling with photonic elements, or more sensitive metrology. However, this aspect results in a significant challenge for defect identification and characterization, as the defect's properties depend on the the atomic environment. This study explores how the environment can influence the properties of carbon impurity centers in hexagonal boron nitride (hBN). It compares the optical and electronic properties of such defects between bulk-like and few-layer films, showing alteration of the zero-phonon line energies and their phonon sidebands, and enhancements of inhomogeneous broadenings. To disentangle the mechanisms responsible for these changes, including the atomic structure, electronic wavefunctions, and dielectric screening, it combines ab initio calculations with a quantum-embedding approach. By studying various carbon-based defects embedded in monolayer and bulk hBN, it demonstrates that the dominant effect of the change in the environment is the screening of density-density Coulomb interactions between the defect orbitals. The comparative analysis of experimental and theoretical findings paves the way for improved identification of defects in low-dimensional materials and the development of atomic scale sensors for dielectric environments.
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Affiliation(s)
- Danis I Badrtdinov
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525, AJ Nijmegen, Netherlands
| | | | - Magdalena Grzeszczyk
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
| | - Zhizhan Qiu
- Department of Chemistry, National University of Singapore, 117543, Singapore
| | - Kristina Vaklinova
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
| | - Pengru Huang
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, China
| | - Alexander Hampel
- Center for Computational Quantum Physics, Flatiron Institute, 162 5 th Avenue, New York, NY 10010, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Lu Jiong
- Department of Chemistry, National University of Singapore, 117543, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, 117546, Singapore
| | - Marek Potemski
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 Av. des Martyrs, 38042, Grenoble, France
- CENTERA Labs, Institute of High Pressure Physics, PAS PL-01-142, Warsaw, Poland
- Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warszawa, Poland
| | - Cyrus E Dreyer
- Center for Computational Quantum Physics, Flatiron Institute, 162 5 th Avenue, New York, NY 10010, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Maciej Koperski
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Malte Rösner
- Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525, AJ Nijmegen, Netherlands
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5
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Ronceray N, You Y, Glushkov E, Lihter M, Rehl B, Chen TH, Nam GH, Borza F, Watanabe K, Taniguchi T, Roke S, Keerthi A, Comtet J, Radha B, Radenovic A. Liquid-activated quantum emission from pristine hexagonal boron nitride for nanofluidic sensing. NATURE MATERIALS 2023; 22:1236-1242. [PMID: 37652991 PMCID: PMC10533396 DOI: 10.1038/s41563-023-01658-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 07/31/2023] [Indexed: 09/02/2023]
Abstract
Liquids confined down to the atomic scale can show radically new properties. However, only indirect and ensemble measurements operate in such extreme confinement, calling for novel optical approaches that enable direct imaging at the molecular level. Here we harness fluorescence originating from single-photon emitters at the surface of hexagonal boron nitride for molecular imaging and sensing in nanometrically confined liquids. The emission originates from the chemisorption of organic solvent molecules onto native surface defects, revealing single-molecule dynamics at the interface through the spatially correlated activation of neighbouring defects. Emitter spectra further offer a direct readout of the local dielectric properties, unveiling increasing dielectric order under nanometre-scale confinement. Liquid-activated native hexagonal boron nitride defects bridge the gap between solid-state nanophotonics and nanofluidics, opening new avenues for nanoscale sensing and optofluidics.
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Affiliation(s)
- Nathan Ronceray
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Laboratory for Fundamental BioPhotonics, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
| | - Yi You
- Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester, UK
- National Graphene Institute, The University of Manchester, Manchester, UK
| | - Evgenii Glushkov
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Martina Lihter
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Physics, Zagreb, Croatia
| | - Benjamin Rehl
- Laboratory for Fundamental BioPhotonics, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Tzu-Heng Chen
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Gwang-Hyeon Nam
- Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester, UK
- National Graphene Institute, The University of Manchester, Manchester, UK
| | - Fanny Borza
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Sylvie Roke
- Laboratory for Fundamental BioPhotonics, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Ashok Keerthi
- National Graphene Institute, The University of Manchester, Manchester, UK
- Department of Chemistry, School of Natural Sciences, The University of Manchester, Manchester, UK
| | - Jean Comtet
- Soft Matter Sciences and Engineering, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - Boya Radha
- Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Manchester, UK.
- National Graphene Institute, The University of Manchester, Manchester, UK.
| | - Aleksandra Radenovic
- Laboratory of Nanoscale Biology, Institute of Bioengineering (IBI), School of Engineering (STI), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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6
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Karanikolas V, Iwasaki T, Henzie J, Ikeda N, Yamauchi Y, Wakayama Y, Kuroda T, Watanabe K, Taniguchi T. Plasmon-Triggered Ultrafast Operation of Color Centers in Hexagonal Boron Nitride Layers. ACS OMEGA 2023; 8:14641-14647. [PMID: 37125116 PMCID: PMC10134455 DOI: 10.1021/acsomega.3c00512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 03/15/2023] [Indexed: 05/03/2023]
Abstract
High-quality emission centers in two-dimensional materials are promising components for future photonic and optoelectronic applications. Carbon-enriched hexagonal boron nitride (hBN:C) layers host atom-like color-center (CC) defects with strong and robust photoemission up to room temperature. Placing the hBN:C layers on top of Ag triangle nanoparticles (NPs) accelerates the decay of the CC defects down to 46 ps from their reference bulk value of 350 ps. The ultrafast decay is achieved due to the efficient excitation of the plasmon modes of the Ag NPs by the near field of the CCs. Simulations of the CC/Ag NP interaction show that higher Purcell values are expected, although the measured decay of the CCs is limited by the instrument response. The influence of the NP thickness on the Purcell factor of the CCs is analyzed. The ultrafast operation of the CCs in hBN:C layers paves the way for their use in demanding applications, such as single-photon emitters and quantum devices.
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Affiliation(s)
- Vasilios Karanikolas
- International
Center for Young Scientists (ICYS), National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takuya Iwasaki
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Joel Henzie
- JST-ERATO
Yamauchi Materials Space-Tectonics Project and International Center
for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Naoki Ikeda
- Research
Network and Facility Services Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Yusuke Yamauchi
- Australian
Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland, Brisbane, Queensland 4072, Australia
- JST-ERATO
Yamauchi Materials Space-Tectonics Project and International Center
for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yutaka Wakayama
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Kuroda
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
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7
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Murzakhanov FF, Mamin GV, Orlinskii SB, Gerstmann U, Schmidt WG, Biktagirov T, Aharonovich I, Gottscholl A, Sperlich A, Dyakonov V, Soltamov VA. Electron-Nuclear Coherent Coupling and Nuclear Spin Readout through Optically Polarized V B- Spin States in hBN. NANO LETTERS 2022; 22:2718-2724. [PMID: 35357842 DOI: 10.1021/acs.nanolett.1c04610] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- spin with a characteristic decay time Tcoh = 15 μs, close to the theoretically predicted limit of 18 μs for defects in hBN. Elongation of the coherence time up to 36 μs is demonstrated by means of the Carr-Purcell-Meiboom-Gill decoupling technique. Modulation of the Hahn-echo decay is shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei via a nuclear quadrupole interaction of 2.11 MHz. DFT calculation confirms that the electron-nuclear coupling is confined to the defective layer and stays almost unchanged with a transition from the bulk to the single layer.
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Affiliation(s)
| | | | | | - Uwe Gerstmann
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Wolf Gero Schmidt
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Timur Biktagirov
- Theoretische Materialphysik, Universität Paderborn, 33098 Paderborn, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
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8
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Glushkov E, Macha M, Räth E, Navikas V, Ronceray N, Cheon CY, Ahmed A, Avsar A, Watanabe K, Taniguchi T, Shorubalko I, Kis A, Fantner G, Radenovic A. Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water. ACS NANO 2022; 16:3695-3703. [PMID: 35254820 PMCID: PMC8945698 DOI: 10.1021/acsnano.1c07086] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically active defects in hBN using FIB and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy, which reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that, upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to nanoscale sensing, and to nanofluidics.
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Affiliation(s)
- Evgenii Glushkov
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- E-mail:
| | - Michal Macha
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Esther Räth
- Laboratory
of Nano-Bio Instrumentation, Institute of
Bioengineering, EPFL, CH-1015 Lausanne, Switzerland
| | - Vytautas Navikas
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Nathan Ronceray
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Cheol Yeon Cheon
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
| | - Aqeel Ahmed
- Laboratory
of Quantum Nano-Optics, Institute of Physics,
EPFL, CH-1015 Lausanne, Switzerland
| | - Ahmet Avsar
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
- School of
Mathematics, Statistics and Physics, Newcastle
University, Newcastle upon Tyne, NE1 7RU, United Kingdom
| | - Kenji Watanabe
- National
Institute for Materials Science, 305-0044 Tsukuba, Japan
| | | | - Ivan Shorubalko
- Laboratory
for Transport at Nanoscale Interfaces, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Andras Kis
- Laboratory
of Nanoscale Electronics and Structures, Electrical Engineering Institute and Institute of Materials Science,
EPFL, CH-1015 Lausanne, Switzerland
| | - Georg Fantner
- Laboratory
of Nano-Bio Instrumentation, Institute of
Bioengineering, EPFL, CH-1015 Lausanne, Switzerland
| | - Aleksandra Radenovic
- Laboratory
of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- E-mail:
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9
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Saha S, Chang YC, Yang TH, Rice A, Ghosh A, You W, Crawford M, Lu TH, Lan YW, Arafin S. Sub-bandgap photoluminescence properties of multilayer h-BN-on-sapphire. NANOTECHNOLOGY 2022; 33:215702. [PMID: 35130530 DOI: 10.1088/1361-6528/ac5283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2021] [Accepted: 02/07/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) materials have garnered increasing attention due to its ability of hosting intrinsic quantum point defects. This paper presents a photoluminescence (PL) mapping study related to sub-bandgap-level emission in bulk-like multilayer h-BN films. Spatial PL intensity distributions were carefully analyzed with 500 nm spatial resolution in terms of zero phonon line (ZPL) and phonon sideband (PSB) emission-peaks and their linewidths, thereby identifying the potential quantum point defects within the films. Two types of ZPL and PSB emissions were confirmed from the point defects located at the non-edge and edge of the films. Our statistical PL data from the non-edge- and edge-areas of the sample consistently reveal broad and narrow emissions, respectively. The measured optical properties of these defects and the associated ZPL peak shift and line broadening as a function of temperature between 77° and 300° K are qualitatively and quantitatively explained. Moreover, an enhancement of the photostable PL emission by at least a factor of ×3 is observed when our pristine h-BN was irradiated with a 532 nm laser.
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Affiliation(s)
- Shantanu Saha
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America
| | - Yu-Chen Chang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Tilo Hongwei Yang
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Anthony Rice
- Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185, United States of America
| | - Arnob Ghosh
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America
| | - Weicheng You
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America
| | - Mary Crawford
- Sandia National Laboratories, PO Box 5800, Albuquerque, NM 87185, United States of America
| | - Ting-Hua Lu
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
| | - Shamsul Arafin
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, United States of America
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Liu H, Mendelson N, Abidi IH, Li S, Liu Z, Cai Y, Zhang K, You J, Tamtaji M, Wong H, Ding Y, Chen G, Aharonovich I, Luo Z. Rational Control on Quantum Emitter Formation in Carbon-Doped Monolayer Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3189-3198. [PMID: 34989551 DOI: 10.1021/acsami.1c21781] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising candidates for quantum light generation. Despite this, techniques to control the formation of hBN SPEs down to the monolayer limit are yet to be demonstrated. Recent experimental and theoretical investigations have suggested that the visible wavelength single-photon emitters in hBN originate from carbon-related defects. Here, we demonstrate a simple strategy for controlling SPE creation during the chemical vapor deposition growth of monolayer hBN via regulating surface carbon concentration. By increasing the surface carbon concentration during hBN growth, we observe increases in carbon doping levels by 2.4-fold for B-C bonds and 1.6-fold for N-C bonds. For the same samples, we observe an increase in the SPE density from 0.13 to 0.30 emitters/μm2. Our simple method enables the reliable creation of hBN SPEs in monolayer samples for the first time, opening the door to advanced two-dimensional (2D) quantum state engineering.
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Affiliation(s)
- Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Irfan H Abidi
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
- Centre for Advanced 2D Materials, National University of Singapore, 117542 Singapore
| | - Shaobo Li
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yuting Cai
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mohsen Tamtaji
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Hoilun Wong
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Yao Ding
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, P. R. China
| | - Guojie Chen
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, Foshan University, Foshan 528225, P. R. China
- School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, P. R. China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
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11
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Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54516-54526. [PMID: 34748305 DOI: 10.1021/acsami.1c14591] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition on C-plane (0001) versus A-plane (112̅0) sapphire (α-Al2O3) substrate is reported. The high deposition temperature (>1200 °C) and hydrogen ambient used for hBN deposition on sapphire substantially alters the C-plane sapphire surface chemistry and leaves the top layer(s) oxygen deficient. The resulting surface morphology due to H2 etching of C-plane sapphire is inhomogeneous with increased surface roughness which causes non-uniform residual stress in the deposited hBN film. In contrast to C-plane, the A-plane of sapphire does not alter substantially under a similar high temperature H2 environment, thus providing a more stable alternative substrate for high quality hBN growth. The E2g Raman mode full width at half-maximum (FWHM) for hBN deposited on C-plane sapphire is 24.5 ± 2.1 cm-1 while for hBN on A-plane sapphire is 24.5 ± 0.7 cm-1. The lesser FWHM standard deviation on A-plane sapphire indicates uniform stress distribution across the film due to reduced undulations on the surface. The photoluminescence spectra of the hBN films at 300 and 3 K, obtained on C-plane and A-plane sapphire exhibit similar characteristics with peaks at 4.1 and 5.3 eV reported to be signature peaks associated with defects for hBN films deposited under lower V/III ratios. The dielectric breakdown field of hBN deposited on A-plane sapphire was measured to be 5 MV cm-1, agreeing well with reports on mechanically exfoliated hBN flakes. Thus, under the typical growth conditions required for high crystalline quality hBN growth, A-plane sapphire provides a more chemically stable substrate.
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Affiliation(s)
- Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maria Hilse
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Benjamin Huet
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Azimkhan Kozhakhmetov
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ji Hyun Kim
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ramon Collazo
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Roman Engel-Herbert
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium─Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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12
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Bhang J, Ma H, Yim D, Galli G, Seo H. First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45768-45777. [PMID: 34541839 DOI: 10.1021/acsami.1c16988] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane XNYi dimer defects (X, Y = C, N, P, and Si) form a new class of stable C3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3A2 ground state and 3E excited state, both of which are isolated from the h-BN bulk states. We show that 1E and 1A shelving states exist and they are positioned between the 3E and 3A2 states for all the dimer defects considered in this study. To support future experimental identification of the XNYi dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet XNYi defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers' spin to range from 1.79 GHz (SiNPi0) to 29.5 GHz (CNNi0). Our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.
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Affiliation(s)
- Jooyong Bhang
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - He Ma
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Donggyu Yim
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Hosung Seo
- Department of Energy Systems Research and Department of Physics, Ajou University, Suwon, Gyeonggi 16499, Korea
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13
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Towards practical applications of quantum emitters in boron nitride. Sci Rep 2021; 11:15506. [PMID: 34326349 PMCID: PMC8322094 DOI: 10.1038/s41598-021-93802-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2021] [Accepted: 06/25/2021] [Indexed: 11/09/2022] Open
Abstract
We demonstrate quantum emission capabilities from boron nitride structures which are relevant for practical applications and can be seamlessly integrated into a variety of heterostructures and devices. First, the optical properties of polycrystalline BN films grown by metalorganic vapour-phase epitaxy are inspected. We observe that these specimens display an antibunching in the second-order correlation functions, if the broadband background luminescence is properly controlled. Furthermore, the feasibility to use flexible and transparent substrates to support hBN crystals that host quantum emitters is explored. We characterise hBN powders deposited onto polydimethylsiloxane films, which display quantum emission characteristics in ambient environmental conditions.
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