High Curie temperature and strain-induced semiconductor-metal transition with spin reorientation transition in 2D CrPbTe3 monolayer

Optical transparency in 2D ferromagnetic WSe2/1T-VSe2/WSe2multilayer with strain induced large anomalous Nernst conductivity

Transparent two-dimensional (2D) magnetic materials may bring intriguing features and are indispensable for transparent electronics. However, it is rare to find both optical transparency and room-temperature ferromagnetism simultaneously in a single 2D material. Herein, we explore the possibility of both these features in 2D WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2heterostructures by taking one monolayer (1ML) and two monolayers (2ML) of 1T-VSe2using first-principles calculations. Further, we investigate anomalous Hall conductivity (AHC) and anomalous Nernst conductivity (ANC) using a maximally localized Wannier function. The WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2systems show Curie temperatures of 328 and 405 K. Under biaxial compressive strain, the magnetic anisotropy of both systems is switched from in-plane to out-of-plane. We find a large AHC of 1.51 e2/h and 3.10 e2/h in the electron-doped region for strained WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2systems. Furthermore, we obtain a giant ANC of 3.94 AK-1m-1in a hole-doped strained WSe2/1T-VSe2(2ML)/WSe2system at 100 K. Both WSe2/1T-VSe2(1ML)/WSe2and WSe2/1T-VSe2(2ML)/WSe2are optically transparent in the visible ranges with large refractive indices of 3.2-3.4. Our results may suggest that the WSe2/1T-VSe2/WSe2structure possesses multifunctional physical properties and these features can be utilized for spintronics and optoelectronics device applications such as magnetic sensors, memory devices, and transparent magneto-optic devices at room temperature.

Progress and Prospects in Metallic FexGeTe2 (3 ≤ x ≤ 7) Ferromagnets

Thermal fluctuations in two-dimensional (2D) isotropy systems at non-zero finite temperatures can destroy the long-range (LR) magnetic order due to the mechanisms addressed in the Mermin-Wanger theory. However, the magnetic anisotropy related to spin-orbit coupling (SOC) may stabilize magnetic order in 2D systems. Very recently, 2D FexGeTe2 (3 ≤ x ≤ 7) with a high Curie temperature (TC) has not only undergone significant developments in terms of synthetic methods and the control of ferromagnetism (FM), but is also being actively explored for applications in various devices. In this review, we introduce six experimental methods, ten ferromagnetic modulation strategies, and four spintronic devices for 2D FexGeTe2 materials. In summary, we outline the challenges and potential research directions in this field.

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.

Enhanced Curie temperature in partially decorated CrSnSe3 monolayer with alkali metals (Li, Na, and K)

A two-dimensional ferromagnetic layer with a large Curie temperature is highly desired for spintronics applications. Herein, we investigated the effect of the partial decoration of the CrSnSe₃ monolayer with alkali metals Li, Na, and K on the structure, electronic and magnetic properties. The calculated formation energy, phonon dispersion curves, and ab initio molecular dynamics indicated that the decorated CrSnSe₃ layers are stable and can be fabricated. The Li, Na, and K decorated systems display semiconducting band features, with bandgaps of 0.53, 0.55, and 0.55 eV, respectively, with the HSE06 hybrid functional. We found a ferromagnetic ground state and an in-plane magnetic anisotropy of -2.12, -2.42, and -2.39 meV per cell in the Li, Na, and K-decorated systems, respectively. Based on Monte Carlo Simulations, we obtained largely enhanced Curie temperatures of 241, 256, and 265 K in the Li, Na, and K decorated systems, respectively. Our findings suggest that the decorated layers could be used as potential candidates for spintronics applications.

Structural, electronic phase transitions and thermal spin transport properties in 2D NbSe2 and NbS2: a first-principles study

How to effectively tune 2D electronic and magnetic properties is key to developing novel spintronic materials and devices. Although the strain induced metal-to-half-metal electronic phase transition (EPT) has been studied in 2H NbSe₂ and NbS₂ monolayers, the 1T phase, the Coulomb interaction and the transport properties have not been explored. Here, using first-principles calculations in junction with nonequilibrium Green's function, we present a comprehensive and comparative study on the strain tuned structural, electronic, magnetic and thermal spin transport properties for NbSe₂ and NbS₂ monolayers with and without Coulomb interaction. It is found that the Coulomb interaction makes the strain induced 2H-to-1T structural phase transition easier. Similar to the 2H phase, there is also a strain induced metal-to-half-metal EPT for the 1T phase without Coulomb interaction, and the Coulomb interaction makes the ETP easier. Remarkably, the 2H-NbSe₂ monolayer with Coulomb interaction is a bipolar spin gapless semiconductor (SGS), and novel Dirac half-metal and usually SGS can be obtained by the tensile strain. In addition, we predict the excellent spin Seebeck effect and thermal spin diode effect in the bipolar SGS of the 2H-NbSe₂ monolayer with Coulomb interaction, and expect the spin filtering effect and high magnetoresistance in the half-metals driven by the strain. We also discuss the strength of Coulomb interaction by comparing the theoretical and available experimental electronic states, indicating the indispensability of Coulomb interactions. These results suggest that 2D NbSe₂ and NbS₂ are promising candidates for phase-change spintronic materials and devices, and will stimulate extensive studies on this class of 2D systems.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Topological magnon insulators in two-dimensional van der Waals ferromagnets CrSiTe3 and CrGeTe3: Toward intrinsic gap-tunability

The bosonic analogs of topological insulators have been proposed in numerous theoretical works, but their experimental realization is still very rare, especially for spin systems. Recently, two-dimensional (2D) honeycomb van der Waals ferromagnets have emerged as a new platform for topological spin excitations. Here, via a comprehensive inelastic neutron scattering study and theoretical analysis of the spin-wave excitations, we report the realization of topological magnon insulators in CrXTe₃ (X = Si, Ge) compounds. The nontrivial nature and intrinsic tunability of the gap opening at the magnon band-crossing Dirac points are confirmed, while the emergence of the corresponding in-gap topological edge states is demonstrated theoretically. The realization of topological magnon insulators with intrinsic gap-unability in this class of remarkable 2D materials will undoubtedly lead to new and fascinating technological applications in the domain of magnonics and topological spintronics.