1
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Barbot C, Rondeau-Body C, Coinon C, Deblock Y, Tilmant P, Vaurette F, Yarekha D, Berthe M, Thomas L, Diesinger H, Capiod P, Desplanque L, Grandidier B. InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy. NANOTECHNOLOGY 2024; 35:395302. [PMID: 38964286 DOI: 10.1088/1361-6528/ad5f34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 07/04/2024] [Indexed: 07/06/2024]
Abstract
Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In0.53Ga0.47As nanowires on InP substrates, linear arrays of In0.53Ga0.47As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices.
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Affiliation(s)
- Clément Barbot
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Claire Rondeau-Body
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Christophe Coinon
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Yves Deblock
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pascal Tilmant
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - François Vaurette
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Dmitri Yarekha
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Maxime Berthe
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Louis Thomas
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Heinrich Diesinger
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pierre Capiod
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Bruno Grandidier
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
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2
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Sestoft JE, Marnauza M, Olsteins D, Kanne T, Schlosser RD, Chen IJ, Grove-Rasmussen K, Nygård J. Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires. NANO LETTERS 2024; 24:8394-8401. [PMID: 38865258 PMCID: PMC11249013 DOI: 10.1021/acs.nanolett.4c02055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.
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Affiliation(s)
- Joachim E Sestoft
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rasmus D Schlosser
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - I-Ju Chen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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3
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Olsteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices. NANO LETTERS 2024; 24:6553-6559. [PMID: 38775731 DOI: 10.1021/acs.nanolett.4c01038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
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Affiliation(s)
- Dags Olsteins
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
| | - Thomas Sand Jespersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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4
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Wu HB, Liu YJ, Liu YD, Liu JJ. Resonant exchange of chiral Majorana Fermions modulated by two parallel quantum dots. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:345301. [PMID: 38729174 DOI: 10.1088/1361-648x/ad49fc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 05/10/2024] [Indexed: 05/12/2024]
Abstract
Resonant exchange of the chiral Majorana fermions (MFs) that is coupled to two parallel Majorana zero modes (MZMs) or two parallel quantum dots (QDs) is investigated. We find that, in the two QDs coupling case, the resonant exchange for the chiral MFs is analogous to that in the MZM coupling case. We further propose a circuit based on topological superconductor, which is formed by the proximity coupling of a quantum anomalous Hall insulator and a s-wave superconductor, to observe the resonant exchange of chiral MFs pairs. The numerical calculations show that the resonant transmission of the chiral MFs can be adjusted by varying the coupling parameters at superconductor phase differenceΔφ=π. It is particularly noteworthy that, by only modulating the coupling strength between the two QDs, the resonant exchange may be switched on or off. By adding another MZM, the non-Abelian braiding like operation can be realized. Therefore, our design scheme may provide another way for non-Abelian braiding operation of MFs and the findings may have potential application value in the realization of topological quantum computers.
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Affiliation(s)
- Hai-Bin Wu
- College of Science, Shijiazhuang University, Shijiazhuang 050035, People's Republic of China
| | - Yan-Jun Liu
- College of Science, Shijiazhuang University, Shijiazhuang 050035, People's Republic of China
| | - Ying-Di Liu
- College of Science, Shijiazhuang University, Shijiazhuang 050035, People's Republic of China
| | - Jian-Jun Liu
- College of Science, Shijiazhuang University, Shijiazhuang 050035, People's Republic of China
- College of Physics, Hebei Normal University, Shijiazhuang 050024, People's Republic of China
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5
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Estrada Saldaña JC, Vekris A, Pavešič L, Žitko R, Grove-Rasmussen K, Nygård J. Correlation between two distant quasiparticles in separate superconducting islands mediated by a single spin. Nat Commun 2024; 15:3465. [PMID: 38658553 PMCID: PMC11043349 DOI: 10.1038/s41467-024-47694-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 04/05/2024] [Indexed: 04/26/2024] Open
Abstract
Controlled coupling between distant particles is a key requirement for the implementation of quantum information technologies. A promising platform are hybrid systems of semiconducting quantum dots coupled to superconducting islands, where the tunability of the dots is combined with the macroscopic coherence of the islands to produce states with non-local correlations, e.g. in Cooper pair splitters. Electrons in hybrid quantum dots are typically not amenable to long-distance spin alignment as they tend to be screened into a localized singlet state by bound superconducting quasiparticles. However, two quasiparticles coming from different superconductors can overscreen the quantum dot into a doublet state, leading to ferromagnetic correlations between the superconducting islands. We present experimental evidence of a stabilized overscreened state, implying correlated quasiparticles over a micrometer distance. We propose alternating chains of quantum dots and superconducting islands as a novel platform for controllable large-scale spin coupling.
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Affiliation(s)
| | - Alexandros Vekris
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
- Sino-Danish College (SDC), University of Chinese Academy of Sciences, Beijing, China
| | - Luka Pavešič
- Jožef Stefan Institute, Jamova 39, SI-1000, Ljubljana, Slovenia
- Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000, Ljubljana, Slovenia
| | - Rok Žitko
- Jožef Stefan Institute, Jamova 39, SI-1000, Ljubljana, Slovenia.
- Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000, Ljubljana, Slovenia.
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark.
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6
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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7
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Olšteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Cryogenic multiplexing using selective area grown nanowires. Nat Commun 2023; 14:7738. [PMID: 38007553 PMCID: PMC10676361 DOI: 10.1038/s41467-023-43551-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 11/13/2023] [Indexed: 11/27/2023] Open
Abstract
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.
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Affiliation(s)
- Dāgs Olšteins
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
| | - Thomas S Jespersen
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark.
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark.
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8
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Liu L, Wen L, He F, Zhuo R, Pan D, Zhao J. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy. NANOTECHNOLOGY 2023; 35:065705. [PMID: 37944189 DOI: 10.1088/1361-6528/ad0b1f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2023] [Accepted: 11/09/2023] [Indexed: 11/12/2023]
Abstract
In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III-V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the 〈110〉, 〈100〉 and 〈112〉 orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III-V substrates. The InAs nanowires and nanowire networks are zinc-blende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.
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Affiliation(s)
- Lei Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
| | - Fengyue He
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ran Zhuo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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9
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Wang Y, Chen F, Song W, Geng Z, Yu Z, Yang L, Gao Y, Li R, Yang S, Miao W, Xu W, Wang Z, Xia Z, Song HD, Feng X, Wang T, Zang Y, Li L, Shang R, Xue Q, He K, Zhang H. Ballistic PbTe Nanowire Devices. NANO LETTERS 2023. [PMID: 37948302 DOI: 10.1021/acs.nanolett.3c03604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Disorder is the primary obstacle in the current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected, with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown by using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of 2e2/h are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires as most of the previously studied SAG nanowires (InSb or InAs) have not exhibited zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.
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Affiliation(s)
- Yuhao Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Fangting Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenyu Song
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zuhan Geng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zehao Yu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lining Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yichun Gao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ruidong Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Shuai Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wentao Miao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wei Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhaoyu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zezhou Xia
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hua-Ding Song
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Tiantian Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Yunyi Zang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Lin Li
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Runan Shang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Qikun Xue
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
- Southern University of Science and Technology, Shenzhen 518055, China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Hao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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10
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Morgan N, Dubrovskii VG, Stief AK, Dede D, Sanglé-Ferrière M, Rudra A, Piazza V, Fontcuberta i Morral A. From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE. CRYSTAL GROWTH & DESIGN 2023; 23:5083-5092. [PMID: 37426543 PMCID: PMC10326851 DOI: 10.1021/acs.cgd.3c00316] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 06/01/2023] [Indexed: 07/11/2023]
Abstract
Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in regular arrays with predefined geometry. Here, we investigate the growth mechanisms of GaAs nanoridges on GaAs (100) substrates in selective area trenches by metal-organic vapor-phase epitaxy (MOVPE). It is found that pre-growth annealing results in the formation of valley-like structures of GaAs with atomic terraces inside the trenches. MOVPE growth of GaAs nanoridges consists of three distinct stages. Filling the trench in the first stage exhibits a step-flow growth behavior. Once the structure grows above the mask surface, it enters the second stage of growth by forming {101} side facets as the (100) flat top facet progressively shrinks. In the third stage, the fully formed nanoridge begins to overgrow onto the mask with a significantly reduced growth rate. We develop a kinetic model that accurately describes the width-dependent evolution of the nanoridge morphology through all three stages. MOVPE growth of fully formed nanoridges takes only about 1 min, which is 60 times faster than in our set of molecular beam epitaxy (MBE) experiments reported recently, and with a more regular, triangular cross-sectional geometry defined solely by the {101} facets. In contrast to MBE, no material loss due to Ga adatom diffusion onto the mask surface is observed in MOVPE until the third stage of growth. These results are useful for the fabrication of GaAs nanoridges of different dimensions on the same substrate for various applications and can be extended to other material systems.
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Affiliation(s)
- Nicholas Morgan
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Vladimir G. Dubrovskii
- Faculty
of Physics, Saint Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Ann-Kristin Stief
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Didem Dede
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Marie Sanglé-Ferrière
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Alok Rudra
- Laboratory
of Semiconductor Materials, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Laboratory
of Semiconductor Materials, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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11
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Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell. NANOTECHNOLOGY 2023; 34:265704. [PMID: 36975178 DOI: 10.1088/1361-6528/acc810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 03/28/2023] [Indexed: 06/18/2023]
Abstract
The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)Bsubstrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
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Affiliation(s)
- W Khelifi
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - C Coinon
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - M Berthe
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - D Troadec
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - G Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - X Wallart
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - B Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - L Desplanque
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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12
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Qu J, Beznasyuk DV, Cassidy M, Tanta R, Yang L, Holmes NP, Griffith MJ, Krogstrup P, Cairney JM. Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/InGaAs Nanowires. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47981-47990. [PMID: 36222623 DOI: 10.1021/acsami.2c09594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor nanowire arrays were grown by selective area epitaxy (SAE) using molecular beam epitaxy (MBE), and their subsequent properties were analyzed by a combination of atom probe tomography (APT) and aberration-corrected transmission electron microscopy (TEM). Results revealed the chemical composition of the outermost thin InAs layer, a fine variation in the indium content at the InAs/InGaAs interface, and lightly incorporated element tracing. The results highlight the importance of correlative microscopy approaches in revealing complex nanoscale structures, with TEM being uniquely suited to interrogating the crystallography of InGaAs NWs, whereas APT is capable of three-dimensional (3D) elemental mapping, revealing the subtle compositional variation near the boundary region. This work demonstrates a detailed pathway for the nanoscale structural assessment of novel one-dimensional (1D) nanomaterials.
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Affiliation(s)
| | - Daria V Beznasyuk
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Rawa Tanta
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | | | | | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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13
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Dede D, Glas F, Piazza V, Morgan N, Friedl M, Güniat L, Nur Dayi E, Balgarkashi A, Dubrovskii VG, Fontcuberta I Morral A. Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch. NANOTECHNOLOGY 2022; 33:485604. [PMID: 35952545 DOI: 10.1088/1361-6528/ac88d9] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-assembled nanowire growth mechanisms. Here we use GaAs SAE as a model system to provide a different perspective. First, we provide evidence of the significant impact of the annealing stage in the calculation of the growth rates. Then, by elucidating the effect of geometrical constraints on the growth of the semiconductor crystal, we demonstrate the role of adatom desorption and resorption beyond the direct-impingement and diffusion-limited regime. Our theoretical model explains the effect of these constraints on the growth, and in particular why the SAE growth rate is highly sensitive to the pattern geometry. Finally, the disagreement of the model at the largest pitch points to non-negligible multiple adatom recycling between patterned features. Overall, our findings point out the importance of considering adatom diffusion, adsorption and desorption dynamics in designing the SAE pattern to create pre-determined nanoscale structures across a wafer. These results are fundamental for the SAE process to become viable in the semiconductor industry.
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Affiliation(s)
- Didem Dede
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Frank Glas
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, France
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Nicholas Morgan
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Martin Friedl
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Lucas Güniat
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Elif Nur Dayi
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Akshay Balgarkashi
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | | | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
- Faculty of Basic Sciences, Institute of Physics, EPFL, Lausanne, Switzerland
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14
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Vekris A, Estrada Saldaña JC, Kanne T, Hvid-Olsen T, Marnauza M, Olsteins D, Wauters MM, Burrello M, Nygård J, Grove-Rasmussen K. Electronic Transport in Double-Nanowire Superconducting Islands with Multiple Terminals. NANO LETTERS 2022; 22:5765-5772. [PMID: 35833741 DOI: 10.1021/acs.nanolett.2c01161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We characterize in situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across different pairs of nanowire ends suggest the presence of a subgap state extended over the hybrid parallel-nanowire island. Being gate-tunable, accessible by multiple terminals, and free of quasiparticle poisoning, these nanowires show promise for the implementation of several proposals that rely on parallel nanowire platforms.
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Affiliation(s)
- Alexandros Vekris
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Sino-Danish Center for Education and Research (SDC) SDC Building, Yanqihu Campus, University of Chinese Academy of Sciences, 380 Huaibeizhuang, Huairou District, 101408 Beijing, China
| | | | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thor Hvid-Olsen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Matteo M Wauters
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Michele Burrello
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Niels Bohr International Academy, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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15
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Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures. Nat Commun 2022; 13:4089. [PMID: 35835772 PMCID: PMC9283334 DOI: 10.1038/s41467-022-31778-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Accepted: 07/01/2022] [Indexed: 11/22/2022] Open
Abstract
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-Al2O3 substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks. Planar growth of nanowire arrays involves interactions between materials that affect the electronic behavior of the effective heterojunction. Here, authors show how core curvature and cross-section morphology affect shell growth, demonstrating how strain at the core-shell interface induces electronic band modulations in ZnSe@ZnTe nanowires.
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16
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Bjergfelt MS, Carrad DJ, Kanne T, Johnson E, Fiordaliso EM, Jespersen TS, Nygård J. Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires. NANO LETTERS 2021; 21:9875-9881. [PMID: 34807620 DOI: 10.1021/acs.nanolett.1c02487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
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Affiliation(s)
- Martin Saurbrey Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- DTU Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | | | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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17
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Khan SA, Stampfer L, Mutas T, Kang JH, Krogstrup P, Jespersen TS. Multiterminal Quantized Conductance in InSb Nanocrosses. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100078. [PMID: 34075631 DOI: 10.1002/adma.202100078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2021] [Revised: 03/15/2021] [Indexed: 06/12/2023]
Abstract
By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building, Lyngby, 310, 2800, Denmark
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18
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Kanne T, Marnauza M, Olsteins D, Carrad DJ, Sestoft JE, de Bruijckere J, Zeng L, Johnson E, Olsson E, Grove-Rasmussen K, Nygård J. Epitaxial Pb on InAs nanowires for quantum devices. NATURE NANOTECHNOLOGY 2021; 16:776-781. [PMID: 33972757 DOI: 10.1038/s41565-021-00900-9] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 03/11/2021] [Indexed: 05/21/2023]
Abstract
Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. One challenge is the generation of favourable conditions for heterostructural formation between materials with the desired properties. Here we harness an increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single-crystal, atomically flat Pb films with no axial grain boundaries. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, and therefore they offer a parameter space more than twice as large as those of alternative semiconductor-superconductor hybrids. Additionally, InAs/Pb island devices exhibit magnetic field-driven transitions from a Cooper pair to single-electron charging, a prerequisite for use in topological quantum computation. Semiconductor-Pb hybrids potentially enable access to entirely new regimes for a number of different quantum systems.
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Affiliation(s)
- Thomas Kanne
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joeri de Bruijckere
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lunjie Zeng
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Eva Olsson
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
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19
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Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100263. [PMID: 33856732 DOI: 10.1002/smll.202100263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/08/2021] [Indexed: 06/12/2023]
Abstract
There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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20
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Yuan X, Wang N, Tian Z, Zhang F, Li L, Lockrey M, He J, Jagadish C, Tan HH. Facet-dependent growth of InAsP quantum wells in InP nanowire and nanomembrane arrays. NANOSCALE HORIZONS 2020; 5:1530-1537. [PMID: 32955074 DOI: 10.1039/d0nh00410c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective area epitaxy is a powerful growth technique that has been used to produce III-V semiconductor nanowire and nanomembrane arrays for photonic and electronic applications. The incorporation of a heterostructure such as quantum wells (QWs) brings new functionality and further broadens their applications. Using InP nanowires and nanomembranes as templates, we investigate the growth of InAsP QWs on these pure wurtzite nanostructures. InAsP QWs grow both axially and laterally on the nanowires and nanomembranes, forming a zinc blende phase axially and wurtzite phase on the sidewalls. On the non-polar {11[combining macron]00} sidewalls, the radial QW selectively grows on one sidewall which is located at the semi-polar 〈112[combining macron]〉 A side of the axial QW, causing the shape evolution of the nanowires from hexagonal to triangular cross section. For nanomembranes with {11[combining macron]00} sidewalls, the radial QW grows asymmetrically on the {11[combining macron]00} facet, destroying their symmetry. In comparison, nanomembranes with {112[combining macron]0} sidewalls are shown to be an ideal template for the growth of InAsP QWs, thanks to the uniform QW formation. These QWs emit strongly in the near IR region at room temperature and their emission can be tuned by changing their thickness or composition. These findings enrich our understanding of the QW growth, which provides new insights for heterostructure design in other III-V nanostructures.
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Affiliation(s)
- Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, P. R. China.
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21
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Carrad DJ, Bjergfelt M, Kanne T, Aagesen M, Krizek F, Fiordaliso EM, Johnson E, Nygård J, Jespersen TS. Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908411. [PMID: 32337791 DOI: 10.1002/adma.201908411] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Revised: 02/27/2020] [Accepted: 03/23/2020] [Indexed: 06/11/2023]
Abstract
Uniform, defect-free crystal interfaces and surfaces are crucial ingredients for realizing high-performance nanoscale devices. A pertinent example is that advances in gate-tunable and topological superconductivity using semiconductor/superconductor electronic devices are currently built on the hard proximity-induced superconducting gap obtained from epitaxial indium arsenide/aluminum heterostructures. Fabrication of devices requires selective etch processes; these exist only for InAs/Al hybrids, precluding the use of other, potentially superior material combinations. This work introduces a crystal growth platform-based on 3D structuring of growth substrates-which enables synthesis of semiconductor nanowire hybrids with in situ patterned superconductor shells. The platform eliminates the need for etching, thereby enabling full freedom in the choice of hybrid constituents. All of the most frequently used superconducting hybrid device architectures are realized and characterized. These devices exhibit increased yield and electrostatic stability compared to etched devices, and evidence of ballistic superconductivity is observed. In addition to aluminum, hybrid structures based on tantalum, niobium, and vanadium are presented.
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Affiliation(s)
- Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Danish Defence Research Center, Ballerup, 2750, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Spintronics, Institute of Physics, Czech Academy of Sciences, Praha 6, Prague, 162 00, Czech Republic
| | | | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Mechanical Engineering, Technical University of Denmark, Kgs. Lyngby, 2800, Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
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22
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Friedl M, Cerveny K, Huang C, Dede D, Samani M, Hill MO, Morgan N, Kim W, Güniat L, Segura-Ruiz J, Lauhon LJ, Zumbühl DM, Fontcuberta I Morral A. Remote Doping of Scalable Nanowire Branches. NANO LETTERS 2020; 20:3577-3584. [PMID: 32315191 DOI: 10.1021/acs.nanolett.0c00517] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.
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Affiliation(s)
- Martin Friedl
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Kris Cerveny
- Department of Physics, University of Basel, Basel, Switzerland
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Didem Dede
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Mohammad Samani
- Department of Physics, University of Basel, Basel, Switzerland
| | - Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Nicholas Morgan
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Wonjong Kim
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Lucas Güniat
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | | | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | | | - Anna Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
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23
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Danon J, Hellenes AB, Hansen EB, Casparis L, Higginbotham AP, Flensberg K. Nonlocal Conductance Spectroscopy of Andreev Bound States: Symmetry Relations and BCS Charges. PHYSICAL REVIEW LETTERS 2020; 124:036801. [PMID: 32031855 DOI: 10.1103/physrevlett.124.036801] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2019] [Indexed: 06/10/2023]
Abstract
Two-terminal conductance spectroscopy of superconducting devices is a common tool for probing Andreev and Majorana bound states. Here, we study theoretically a three-terminal setup, with two normal leads coupled to a grounded superconducting terminal. Using a single-electron scattering matrix, we derive the subgap conductance matrix for the normal leads and discuss its symmetries. In particular, we show that the local and the nonlocal elements of the conductance matrix have pairwise identical antisymmetric components. Moreover, we find that the nonlocal elements are directly related to the local BCS charges of the bound states close to the normal probes and we show how the BCS charge of overlapping Majorana bound states can be extracted from experiments.
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Affiliation(s)
- Jeroen Danon
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Anna Birk Hellenes
- Center for Quantum Devices, Niels Bohr Institute, 2100 Copenhagen, Denmark
| | - Esben Bork Hansen
- Center for Quantum Devices, Niels Bohr Institute, 2100 Copenhagen, Denmark
| | - Lucas Casparis
- Center for Quantum Devices, Niels Bohr Institute, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Andrew P Higginbotham
- Center for Quantum Devices, Niels Bohr Institute, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Karsten Flensberg
- Center for Quantum Devices, Niels Bohr Institute, 2100 Copenhagen, Denmark
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24
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Ménard GC, Anselmetti GLR, Martinez EA, Puglia D, Malinowski FK, Lee JS, Choi S, Pendharkar M, Palmstrøm CJ, Flensberg K, Marcus CM, Casparis L, Higginbotham AP. Conductance-Matrix Symmetries of a Three-Terminal Hybrid Device. PHYSICAL REVIEW LETTERS 2020; 124:036802. [PMID: 32031865 DOI: 10.1103/physrevlett.124.036802] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2019] [Indexed: 06/10/2023]
Abstract
We present conductance-matrix measurements of a three-terminal superconductor-semiconductor hybrid device consisting of two normal leads and one superconducting lead. Using a symmetry decomposition of the conductance, we find that antisymmetric components of pairs of local and nonlocal conductances qualitatively match at energies below the superconducting gap, and we compare this finding with symmetry relations based on a noninteracting scattering matrix approach. Further, the local charge character of Andreev bound states is extracted from the symmetry-decomposed conductance data and is found to be similar at both ends of the device and tunable with gate voltage. Finally, we measure the conductance matrix as a function of magnetic field and identify correlated splittings in low-energy features, demonstrating how conductance-matrix measurements can complement traditional single-probe measurements in the search for Majorana zero modes.
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Affiliation(s)
- G C Ménard
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - G L R Anselmetti
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - E A Martinez
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - D Puglia
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - F K Malinowski
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - J S Lee
- California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA
| | - S Choi
- Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA
| | - M Pendharkar
- Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA
| | - C J Palmstrøm
- California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA
- Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA
- Materials Department, University of California, Santa Barbara, California 93106, USA
| | - K Flensberg
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - C M Marcus
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - L Casparis
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - A P Higginbotham
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
- Microsoft Quantum-Copenhagen, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
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25
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Liu Y, Vaitiekėnas S, Martí-Sánchez S, Koch C, Hart S, Cui Z, Kanne T, Khan SA, Tanta R, Upadhyay S, Cachaza ME, Marcus CM, Arbiol J, Moler KA, Krogstrup P. Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires: Stray Field and Exchange Field. NANO LETTERS 2020; 20:456-462. [PMID: 31769993 DOI: 10.1021/acs.nanolett.9b04187] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for the design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures. We study the crystal growth and complex epitaxial matching of wurtzite and zinc-blende InAs/rock-salt EuS interfaces as well as rock-salt EuS/face-centered cubic Al interfaces. Because of the magnetic anisotropy originating from the nanowire shape, the magnetic structure of the EuS phase is easily tuned into single magnetic domains. This effect efficiently ejects the stray field lines along the nanowires. With tunnel spectroscopy measurements of the density of states, we show that the material has a hard induced superconducting gap, and magnetic hysteretic evolution which indicates that the magnetic exchange fields are not negligible. These hybrid nanowires fulfill key material requirements for serving as a platform for spin-based quantum applications, such as scalable topological quantum computing.
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Affiliation(s)
- Yu Liu
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Saulius Vaitiekėnas
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
- Microsoft Quantum Lab Copenhagen, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra, Barcelona , 08193 Catalonia , Spain
| | - Christian Koch
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra, Barcelona , 08193 Catalonia , Spain
| | - Sean Hart
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- Department of Physics , Stanford University , Stanford , California 94305 , United States
| | - Zheng Cui
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- Department of Applied Physics , Stanford University , Stanford , California 94305 , United States
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Rawa Tanta
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Shivendra Upadhyay
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
- Microsoft Quantum Lab Copenhagen, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Martin Espiñeira Cachaza
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Charles M Marcus
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
- Microsoft Quantum Lab Copenhagen, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST , Campus UAB, Bellaterra, Barcelona , 08193 Catalonia , Spain
- ICREA , Pg. Lluís Companys 23 , Barcelona , 08010 Catalonia , Spain
| | - Kathryn A Moler
- Stanford Institute for Materials and Energy Sciences , SLAC National Accelerator Laboratory , Menlo Park , California 94025 , United States
- Department of Physics , Stanford University , Stanford , California 94305 , United States
- Department of Applied Physics , Stanford University , Stanford , California 94305 , United States
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen , 2800 Lyngby , Denmark
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen , 2100 Copenhagen , Denmark
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26
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Aseev P, Wang G, Binci L, Singh A, Martí-Sánchez S, Botifoll M, Stek LJ, Bordin A, Watson JD, Boekhout F, Abel D, Gamble J, Van Hoogdalem K, Arbiol J, Kouwenhoven LP, de Lange G, Caroff P. Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth. NANO LETTERS 2019; 19:9102-9111. [PMID: 31730748 DOI: 10.1021/acs.nanolett.9b04265] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10 000-25 000 cm2 V-1 s-1 consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings.
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Affiliation(s)
- Pavel Aseev
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Guanzhong Wang
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Luca Binci
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Amrita Singh
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Sara Martí-Sánchez
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
| | - Marc Botifoll
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
| | - Lieuwe J Stek
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Alberto Bordin
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - John D Watson
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Frenk Boekhout
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
- QuTech and Netherlands Organization for Applied Scientific Research (TNO) , Stieltjesweg 1 , 2628 CK Delft , The Netherlands
| | - Daniel Abel
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - John Gamble
- Microsoft Quantum , 1 Redmond Way , Redmond , Washington 98052 , United States
| | | | - Jordi Arbiol
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
- ICREA , Pg. Lluí s Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Leo P Kouwenhoven
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Gijs de Lange
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
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27
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Bollani M, Salvalaglio M, Benali A, Bouabdellaoui M, Naffouti M, Lodari M, Corato SD, Fedorov A, Voigt A, Fraj I, Favre L, Claude JB, Grosso D, Nicotra G, Mio A, Ronda A, Berbezier I, Abbarchi M. Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits. Nat Commun 2019; 10:5632. [PMID: 31822679 PMCID: PMC6904683 DOI: 10.1038/s41467-019-13371-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2019] [Accepted: 11/06/2019] [Indexed: 11/09/2022] Open
Abstract
Large-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of \documentclass[12pt]{minimal}
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\begin{document}$$\sim$$\end{document}~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits. Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex interconnected circuits of monocrystalline Si on a chip.
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Affiliation(s)
- Monica Bollani
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy.
| | - Marco Salvalaglio
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.
| | - Abdennacer Benali
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Mohammed Bouabdellaoui
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratory of Physics of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, Hassan II University of Casablanca, 146 Mohammedia, Casablanca, Morocco
| | - Meher Naffouti
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Mario Lodari
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Stefano Di Corato
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Alexey Fedorov
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Axel Voigt
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.,Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
| | - Ibtissem Fraj
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Luc Favre
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Jean Benoit Claude
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - David Grosso
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | | | - Antonio Mio
- CNR-IMM, Zona Industriale Strada VIII, 5, 95121, Catania, Italy
| | - Antoine Ronda
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Isabelle Berbezier
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Marco Abbarchi
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.
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28
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Seidl J, Gluschke JG, Yuan X, Naureen S, Shahid N, Tan HH, Jagadish C, Micolich AP, Caroff P. Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy. NANO LETTERS 2019; 19:4666-4677. [PMID: 31241966 DOI: 10.1021/acs.nanolett.9b01703] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report a method for growing rectangular InAs nanofins with deterministic length, width, and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, while retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5-5 × 1017 cm-3, corresponding to an approximate surface accumulation layer density 3-6 × 1012 cm-2 that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as 1200 cm2/(V s), field-effect mobilities as high as 4400 cm2/(V s), and clear quantum interference structure at temperatures as high as 20 K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates, and possibly other functional elements, for example, patterned superconductor contacts, that may make them attractive options for future quantum information applications.
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Affiliation(s)
- J Seidl
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - J G Gluschke
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - X Yuan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P.R. China
| | - S Naureen
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- IRnova AB , Electrum 236 , Kista SE-164 40 , Sweden
| | - N Shahid
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Finisar Sweden AB , Bruttovägen 7 , Järfälla SE-175 43 , Sweden
| | - H H Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
| | - C Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
| | - A P Micolich
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - P Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
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29
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Zamani RR, Arbiol J. Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy. NANOTECHNOLOGY 2019; 30:262001. [PMID: 30812017 DOI: 10.1088/1361-6528/ab0b0a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.
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Affiliation(s)
- Reza R Zamani
- Department of Physics, Chalmers University of Technology, Gothenburg, SE-41296, Sweden. Interdisciplinary Centre for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland
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30
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Wang N, Yuan X, Zhang X, Gao Q, Zhao B, Li L, Lockrey M, Tan HH, Jagadish C, Caroff P. Shape Engineering of InP Nanostructures by Selective Area Epitaxy. ACS NANO 2019; 13:7261-7269. [PMID: 31180645 DOI: 10.1021/acsnano.9b02985] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P. R. China
| | - Xu Zhang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
- National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering , Zhengzhou University , Zhengzhou , Henan 450052 , P. R. China
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Bijun Zhao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Mark Lockrey
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
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31
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Güniat L, Caroff P, Fontcuberta I Morral A. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions. Chem Rev 2019; 119:8958-8971. [PMID: 30998006 DOI: 10.1021/acs.chemrev.8b00649] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.
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Affiliation(s)
- Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland.,Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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32
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Cao Z, Zhang H, Lü HF, He WX, Lu HZ, Xie XC. Decays of Majorana or Andreev Oscillations Induced by Steplike Spin-Orbit Coupling. PHYSICAL REVIEW LETTERS 2019; 122:147701. [PMID: 31050472 DOI: 10.1103/physrevlett.122.147701] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2018] [Indexed: 06/09/2023]
Abstract
The Majorana zero mode in the semiconductor-superconductor nanowire is one of the promising candidates for topological quantum computing. Recently, in islands of nanowires, subgap-state energies have been experimentally observed to oscillate as a function of the magnetic field, showing a signature of overlapped Majorana bound states. However, the oscillation amplitude either dies away after an overshoot or decays, sharply opposite to the theoretically predicted enhanced oscillations for Majorana bound states. We reveal that a steplike distribution of spin-orbit coupling in realistic devices can induce the decaying Majorana oscillations, resulting from the coupling-induced energy repulsion between the quasiparticle spectra on the two sides of the step. This steplike spin-orbit coupling can also lead to decaying oscillations in the spectrum of the Andreev bound states. For Coulomb-blockade peaks mediated by the Majorana bound states, the peak spacings have been predicted to correlate with peak heights by a π/2 phase shift, which was ambiguous in recent experiments and may be explained by the steplike spin-orbit coupling. Our work will inspire more works to reexamine effects of the nonuniform spin-orbit coupling, which is generally present in experimental devices.
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Affiliation(s)
- Zhan Cao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- School of Physics, Southeast University, Nanjing 211189, China
- Peng Cheng Laboratory, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - Hao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Hai-Feng Lü
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Wan-Xiu He
- Center for Interdisciplinary Studies and Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Peng Cheng Laboratory, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - X C Xie
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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33
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Aseev P, Fursina A, Boekhout F, Krizek F, Sestoft JE, Borsoi F, Heedt S, Wang G, Binci L, Martí-Sánchez S, Swoboda T, Koops R, Uccelli E, Arbiol J, Krogstrup P, Kouwenhoven LP, Caroff P. Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks. NANO LETTERS 2019; 19:218-227. [PMID: 30521341 PMCID: PMC6331184 DOI: 10.1021/acs.nanolett.8b03733] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2018] [Revised: 11/15/2018] [Indexed: 05/19/2023]
Abstract
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
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Affiliation(s)
- Pavel Aseev
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
- E-mail:
| | - Alexandra Fursina
- Microsoft
Station Q at Delft University of Technology, 2600 GA Delft, Netherlands
| | - Frenk Boekhout
- QuTech
and Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CK Delft, The Netherlands
| | - Filip Krizek
- Center
For Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Joachim E. Sestoft
- Center
For Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Francesco Borsoi
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
| | - Sebastian Heedt
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
| | - Guanzhong Wang
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
| | - Luca Binci
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
| | - Sara Martí-Sánchez
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
| | - Timm Swoboda
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
| | - René Koops
- QuTech
and Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CK Delft, The Netherlands
| | - Emanuele Uccelli
- QuTech
and Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628 CK Delft, The Netherlands
| | - Jordi Arbiol
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys
23, 08010 Barcelona, Catalonia, Spain
| | - Peter Krogstrup
- Center
For Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Leo P. Kouwenhoven
- QuTech
and Kavli Institute of NanoScience, Delft
University of Technology, Lorentzweg 1, 2600 GA Delft, The Netherlands
- Microsoft
Station Q at Delft University of Technology, 2600 GA Delft, Netherlands
- E-mail:
| | - Philippe Caroff
- Microsoft
Station Q at Delft University of Technology, 2600 GA Delft, Netherlands
- E-mail:
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34
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Berdnikov Y, Sibirev NV, Khayrudinov V, Alaferdov A, Moshkalev S, Ubyivovk EV, Lipsanen H, Bouravleuv A. Growth of GaAs nanowire–graphite nanoplatelet hybrid structures. CrystEngComm 2019. [DOI: 10.1039/c9ce01027k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The scenarios of MOVPE growth of planar and non-planar GaAs nanowires are controlled with graphite nanoplatelet substrates and catalyst placement.
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Affiliation(s)
| | | | | | - Andrei Alaferdov
- Center for Semiconductor Components
- State University of Campinas
- Campinas
- Brazil
| | - Stanislav Moshkalev
- Center for Semiconductor Components
- State University of Campinas
- Campinas
- Brazil
| | | | - Harri Lipsanen
- Department of Electronics and Nanoengineering
- Micronova, Aalto University
- Finland
| | - Alexei Bouravleuv
- Department of Electronics and Nanoengineering
- Micronova, Aalto University
- Finland
- St. Petersburg Academic University
- 194021 St. Petersburg
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35
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Schrade C, Fu L. Majorana Superconducting Qubit. PHYSICAL REVIEW LETTERS 2018; 121:267002. [PMID: 30636155 DOI: 10.1103/physrevlett.121.267002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2018] [Indexed: 06/09/2023]
Abstract
We propose a platform for universal quantum computation that uses conventional s-wave superconducting leads to address a topological qubit stored in spatially separated Majorana bound states in a multiterminal topological superconductor island. Both the manipulation and readout of this "Majorana superconducting qubit" are realized by tunnel couplings between Majorana bound states and the superconducting leads. The ability of turning on and off tunnel couplings on demand by local gates enables individual qubit addressability while avoiding cross-talk errors. By combining the scalability of superconducting qubit and the robustness of topological qubits, the Majorana superconducting qubit may provide a promising and realistic route towards quantum computation.
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Affiliation(s)
- Constantin Schrade
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA
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