Giant LO-TO splittings in perovskite ferroelectrics

Atomic-Scale Tracking Topological Phase Transition Dynamics of Polar Vortex-Antivortex Pairs

Non-trivial topological structures, such as vortex-antivortex (V-AV) pairs, have garnered significant attention in the field of condensed matter physics. However, the detailed topological phase transition dynamics of V-AV pairs, encompassing behaviors like self-annihilation, motion, and dissociation, have remained elusive in real space. Here, polar V-AV pairs are employed as a model system, and their transition pathways are tracked with atomic-scale resolution, facilitated by in situ (scanning) transmission electron microscopy and phase field simulations. This investigation reveals that polar vortices and antivortices can stably coexist as bound pairs at room temperature, and their polarization decreases with heating. No dissociation behavior is observed between the V-AV phase at room temperature and the paraelectric phase at high temperature. However, the application of electric fields can promote the approach of vortex and antivortex cores, ultimately leading to their annihilation near the interface. Revealing the transition process mediated by polar V-AV pairs at the atomic scale, particularly the role of polar antivortex, provides new insights into understanding the topological phases of matter and their topological phase transitions. Moreover, the detailed exploration of the dynamics of polar V-AV pairs under thermal and electrical fields lays a solid foundation for their potential applications in electronic devices.

Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III-V monolayers

Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room temperature ferroelectricity in AB-type monolayers comprising group III (A = Al, In, Ga) and group V (B = As, P, Sb) elements. We show that their spontaneous polarization, oriented out-of-plane, ranges from 9.48 to 13.96 pC m-1, outperforming most known 2D ferroelectrics. We demonstrate an electric field tunable Berry curvature dipole and nonlinear Hall current in these monolayers. Additionally, we highlight their applicability in next-generation memory devices by forming efficient ferroelectric tunnel junctions, especially in InP, which supports high tunneling electroresistance. Our findings motivate further exploration of these monolayers for studying the interplay between the Berry curvature and ferroelectricity and for integrating these ferroelectric monolayers in next-generation electronic devices.

Revealing the three-dimensional arrangement of polar topology in nanoparticles

In the early 2000s, low dimensional ferroelectric systems were predicted to have topologically nontrivial polar structures, such as vortices or skyrmions, depending on mechanical or electrical boundary conditions. A few variants of these structures have been experimentally observed in thin film model systems, where they are engineered by balancing electrostatic charge and elastic distortion energies. However, the measurement and classification of topological textures for general ferroelectric nanostructures have remained elusive, as it requires mapping the local polarization at the atomic scale in three dimensions. Here we unveil topological polar structures in ferroelectric BaTiO3 nanoparticles via atomic electron tomography, which enables us to reconstruct the full three-dimensional arrangement of cation atoms at an individual atom level. Our three-dimensional polarization maps reveal clear topological orderings, along with evidence of size-dependent topological transitions from a single vortex structure to multiple vortices, consistent with theoretical predictions. The discovery of the predicted topological polar ordering in nanoscale ferroelectrics, independent of epitaxial strain, widens the research perspective and offers potential for practical applications utilizing contact-free switchable toroidal moments.

Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO 3 /BaSnO 3 heterostructure

The two-dimensional electron gas (2DEG) in BaSnO3 -based heterostructure (HS) has received tremendous attention in the electronic applications because of its excellent electron migration characteristic. We modeled the n-type (LaO)+ /(SnO2 )0 interface by depositing LaGaO3 film on the BaSnO3 substrate and explored strain effects on the critical thickness for forming 2DEG and electrical properties of LaGaO3 /BaSnO3 HS system using first-principles electronic structure calculations. The results indicate that to form 2DEG in the unstrained LaGaO3 /BaSnO3 HS system, a minimum thickness of approximately 4 unit cells of LaGaO3 film is necessary. An increased film thickness of LaGaO3 is required to form the 2DEG for -3%-biaxially-strained HS system and the critical thickness is 3 unit cells for 3%-baxially-strained HS system, which is caused by the strain-induced change of the electrostatic potential in LaGaO3 film. In addition, the biaxial strain plays an important role in tailoring the electrical properties of 2DEG in LaGaO3 /BaSnO3 HS syestem. The interfacial charge carrier density, electron mobility and electrical conductivity can be optimized when a moderate tensile strain is applied on the BaSnO3 substrate in the ab-plane.

Large Polarization Near 50 μC/cm2 in a Single Unit Cell Layer SrTiO3

The generally nonpolar SrTiO3 has attracted more attention recently because of its possibly induced novel polar states and related paraelectric-ferroelectric phase transitions. By using controlled pulsed laser deposition, high-quality, ultrathin, and strained SrTiO3 layers were obtained. Here, transmission electron microscopy and theoretical simulations have unveiled highly polar states in SrTiO3 films even down to one unit cell at room temperature, which were stabilized in the PbTiO3/SrTiO3/PbTiO3 sandwich structures by in-plane tensile strain and interfacial coupling, as evidenced by large tetragonality (∼1.05), notable polar ion displacement (0.019 nm), and thus ultrahigh spontaneous polarization (up to ∼50 μC/cm2). These values are nearly comparable to those of the strong ferroelectrics as the PbZrxTi1-xO3 family. Our findings provide an effective and practical approach for integrating large strain states into oxide films and inducing polarization in nonpolar materials, which may broaden the functionality of nonpolar oxides and pave the way for the discovery of new electronic materials.

Emergent ultrasmall multiferroics in paraelectric perovskite oxide by hole polarons

Ultimately small multiferroics with coupled ferroelectric and ferromagnetic order parameters have drawn considerable attention for their tremendous technological potential. Nevertheless, these ferroic orders inevitably disappear below the critical size of several nanometers in conventional ferroelectrics or multiferroics. Here, based on first-principles calculations, we propose a new strategy to overcome this limitation and create ultrasmall multiferroic elements in otherwise nonferroelectric CaTiO3 by engineering the interplay of oxygen octahedral rotations and hole polarons, though both of them are generally believed to be detrimental to ferroelectricity. It is found that the hole doped in CaTiO3 spontaneously forms a localized polaronic state. The lattice distortions associated with a hole polaron interacting with the intrinsic oxygen octahedral rotations in CaTiO3 effectively break the inversion symmetry and create atomic-scale ferroelectricity beyond the critical size limitation. The hole polaron also causes highly localized magnetism attributed to the associated spin-polarized electric state and thus manifests as a multiferroic polaron. Moreover, the hole polaron exhibits high hopping mobility accompanied by rich switching of polarization and magnetic directions, indicating strong magnetoelectric coupling with a mechanism dissimilar from that of conventional multiferroics. The present work provides a new mechanism to engineer inversion symmetry and opens avenues for designing unusual multifunctional materials.

Metavalent Bonding in 2D Chalcogenides: Structural Origin and Chemical Mechanisms

An unusual set of anomalous functional properties of rocksalt crystals of Group IV chalcogenides were recently linked to a kind of bonding termed as metavalent bonding (MVB) which involves violation of the 8-N rule. Precise mechanisms of MVB and the relevance of lone pair of Group IV cations are still debated. With restrictions of low dimensionality on the possible atomic coordination, 2D materials provide a rich platform for exploration of MVB. Here, we present first-principles theoretical analysis of the nature of bonding in five distinct 2D lattices of Group IV chalcogenides MX (M: Sn, Pb, Ge and X: S, Se, Te), in which the natural out-of-plane expression of the lone pair versus in-plane bonding can be systematically explored. While their honeycomb lattices respecting the 8-N rule are shown to exhibit covalent bonding, their square and orthorhombic structures exhibit MVB only in-plane, with cationic lone pair activating the out-of-plane structural puckering that controls their relative stability. Anomalies in Born-effective charges, dielectric constants, Grüneisen parameters occur only in their in-plane behaviour, confirming MVB is confined strictly to 2D and originates from p-p orbital interactions. Our work opens up directions for chemical design of MVB based 2D materials and their heterostructures.

Unconventional Polarization-Switching Mechanism in (Hf, Zr)O_{2} Ferroelectrics and Its Implications

HfO_{2}-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal performance of these devices. Here, a generalized solid-state variable cell nudged elastic band method is employed to predict the switching pathway associated with domain-wall motion in (Hf,Zr)O_{2} ferroelectrics. It is found that the polarization reversal pathway, where threefold coordinated O atoms pass across the nominal unit-cell boundaries defined by the Hf/Zr atomic planes, is energetically more favorable than the conventional pathway where the O atoms do not pass through these planes. This finding implies that the polarization orientation in the orthorhombic Pca2_{1} phase of HfO_{2} and its derivatives is opposite to that normally assumed, predicts the spontaneous polarization magnitude of about 70  μC/cm^{2} that is nearly 50% larger than the commonly accepted value, signifies a positive intrinsic longitudinal piezoelectric coefficient, and suggests growth of ferroelectric domains, in response to an applied electric field, structurally reversed to those usually anticipated. These results provide important insights into the understanding of ferroelectricity in HfO_{2}-based ferroelectrics.

Extended planar defects of oxygen vacancies in ferroelectric [Formula: see text] and impact on ferroelectricity

Extended defects of vacancies in ferroelectrics (FE), where vacancies spread over an extended space, are of critical importance in terms of understanding the long-standing problems such as polarization fatigue and aging. However, extended defects in FEs are poorly understood. Here we investigate the extended planar oxygen vacancies in ferroelectric [Formula: see text] using density functional theory and the modern theory of polarization. Oxygen vacancies of different charge states, namely [Formula: see text], [Formula: see text], and [Formula: see text], are studied. We obtain interesting results such as: (i) The formation energy of planar [Formula: see text] vacancies can be very small (merely 0.54 eV) even under the oxygen-rich condition, which is considerably smaller than the formation energy (4.0 eV) of planar [Formula: see text] vacancies; (ii) Planar [Formula: see text] vacancies drastically reduce the ferroelectric polarization in [Formula: see text] by more than one order of magnitude, which provides a pivotal (theoretical) evidence that the planar oxygen vacancies could be the origin of polarization fatigue and imprinting. The polarization dead layer caused by planar oxygen vacancies is shown to be around 72 Å. Microscopic origin and insight, based on the local Ti-O relative displacements, are provided to understand these interesting phenomena.

Calculation of phonons in real-space density functional theory

We present an accurate and efficient formulation for the calculation of phonons in real-space Kohn-Sham density functional theory. Specifically, employing a local exchange-correlation functional, norm-conserving pseudopotential in the Kleinman-Bylander representation, and local form for the electrostatics, we derive expressions for the dynamical matrix and associated Sternheimer equation that are particularly amenable to the real-space finite-difference method, within the framework of density functional perturbation theory. In particular, the formulation is applicable to insulating as well as metallic systems of any dimensionality, enabling the efficient and accurate treatment of semi-infinite and bulk systems alike, for both orthogonal and nonorthogonal cells. We also develop an implementation of the proposed formulation within the high-order finite-difference method. Through representative examples, we verify the accuracy of the computed phonon dispersion curves and density of states, demonstrating excellent agreement with established plane-wave results.

Tailoring angle dependent ferroelectricity in nanoribbons of group-IV monochalcogenides

Ferroelectricity is significant in low dimensional structures due to the potential applications in multifunctional nanodevices. In this work, the tailoring angle dependent ferroelectricity is systematically investigated for the nanoribbons and nanowires of puckered group-IV monochalcogenides MX (M =Ge,Sn; X =S,Se). Based on first-principles calculations, it is found that the ferroelectricity of nanoribbon and nanowire strongly depends on the tailoring angle. Firstly, the critical width for the bare nanoribbon of group-IV monochalcogenide is obtained and discussed. As the nanowires are concerned, the ferroelectricity will disappear when the tailoring angle becomes small. At last, H-passivation on the edge and the strain engineering are employed to improve the ferroelectricity of nanoribbon, and it is obtained that H-passivation is beneficial to the enhancement of polarization for nanoribbons tailored near the armchair direction, while the polarization of nanoribbons tailored along the diagonal direction will decrease when the edges are passivated with H atoms, and the tensile strain along the length direction always favors the improvement of ferroelectricity of the considered nanoribbons. Therefore, tailoring angle has great influence on the ferroelectricity of nanoribbons and nanowires, which may be used as an effective way to tune the ferroelectricity and further the electronic structures of nanostructures in the field of nanoelectronics.

Phonon Polaritonics in Broad Terahertz Frequency Range with Quantum Paraelectric SrTiO3

Photonics in the frequency range of 5-15 terahertz (THz) potentially open a new realm of quantum materials manipulation and biosensing. This range, sometimes called "the new terahertz gap", is traditionally difficult to access due to prevalent phonon absorption bands in solids. Low-loss phonon-polariton materials may realize sub-wavelength, on-chip photonic devices, but typically operate in mid-infrared frequencies with narrow bandwidths and are difficult to manufacture on a large scale. Here, for the first time, quantum paraelectric SrTiO3 enables broadband surface phonon-polaritonic devices in 7-13 THz. As a proof of concept, polarization-independent field concentrators are designed and fabricated to locally enhance intense, multicycle THz pulses by a factor of 6 and increase the spectral intensity by over 90 times. The time-resolved electric field inside the concentrators is experimentally measured by THz-field-induced second harmonic generation. Illuminated by a table-top light source, the average field reaches 0.5 GV m-1 over a large volume resolvable by far-field optics. These results potentially enable scalable THz photonics with high breakdown fields made of various commercially available phonon-polariton crystals for studying driven phases in quantum materials and nonlinear molecular spectroscopy.

An ab initio DFT perspective on experimentally synthesized CuBi2O4

Here we present a comprehensive density functional theory (DFT) based ab initio study of copper bismuth oxide CuBi₂O₄ (CBO) in combination with experimental observations. The CBO samples were prepared following both solid-state reaction (SCBO) and hydrothermal (HCBO) methods. The P4/ncc phase purity of the as-synthesized samples was corroborated by Rietveld refinement of the powdered X-ray diffraction measurements along with Generalized Gradient Approximation of Perdew-Burke-Ernzerhof (GGA-PBE) and the Hubbard interaction U corrected GGA-PBE+U relaxed crystallographic parameters. Scanning and field emission scanning electron micrographs confirmed the particle size of the SCBO and HCBO samples to be ∼250 and ∼60 nm respectively. The GGA-PBE and GGA-PBE+U derived Raman peaks are in better agreement with that of the experimentally observed ones when compared to local density approximation based results. The DFT derived phonon density of states conforms with the absorption bands in Fourier transform infrared spectra. Both structural and dynamic stability criteria of the CBO are confirmed by elastic tensor and density functional perturbation theory-based phonon band structure simulations respectively. The CBO band gap underestimation of GGA-PBE as compared to UV-vis diffuse reflectance derived 1.8 eV was eliminated by tuning the U and the Hartree-Fock exact-exchange mixing parameter α_HF in GGA-PBE+U and Heyd-Scuseria-Ernzerhof (HSE06) hybrid functionals respectively. The HSE06 with α_HF = 14% yields the optimum linear optical properties of CBO in terms of the dielectric function, absorption, and their derivatives as compared to that of GGA-PBE and GGA-PBE+U functionals. Our as-synthesized HCBO shows ∼70% photocatalytic efficiency in degrading methylene blue dye under 3 h optical illumination. This DFT-guided experimental approach to CBO may help to gain a better understanding of its functional properties.

Size Limiting Elemental Ferroelectricity in Bi Nanoribbons: Observation, Mechanism, and Opportunity

Combined with the inherent spin-orbital coupling effect, the elemental ferroelectricity of monolayer Bi (bismuthene) is the critical property that renders this system a 2D ferroelectric topological insulator. Here, using first-principles calculations, we systematically investigate the ferroelectric polarization in bismuthene nanoribbons and discover the width size limiting effect arising from the edge effects. The decreasing width led to the spontaneous transformation of the zigzag (ZZ) and armchair (AC) paired Bi nanoribbons into newly discovered high-symmetric nonpolarized nanoribbons. For ZZ-paired nanoribbons, the driving force of the phase transition is attributed to the depolarization field, similar to the conventional perovskite ferroelectric thin films. Instead, edge stress as a novel mechanism played a major role in the phase transition of AC-paired nanoribbons. Inspired by such a revealed mechanism, the phase transition and related ultrahigh piezoelectricity can be achieved by strain engineering in Bi nanoribbons, which could enable new applications for 2D ferroelectric devices.

Atomic Origins of Enhanced Ferroelectricity in Nanocolumnar PbTiO3 /PbO Composite Thin Films

Nanocomposite films hold great promise for multifunctional devices by integrating different functionalities within a single film. The microstructure of the precipitate/secondary phase is an essential element in designing composites' properties. The interphase strain between the matrix and secondary phase is responsible for strain-mediated functionalities, such as magnetoelectric coupling and ferroelectricity. However, a quantitative microstructure-dependent interphase strain characterization has been scarcely studied. Here, it is demonstrated that the PbTiO₃ (PTO)/PbO composite system can be prepared in nano-spherical and nanocolumnar configurations by tuning the misfit strain, confirmed by a three-dimensional reconstructive microscopy technique. With the atomic resolution quantitative microscopy with a depth resolution of a few nanometers, it is discovered that the strained region in PTO is much larger and more uniform in nanocolumnar compared to nano-spherical composites, resulting in much enhanced ferroelectric properties. The interphase strain between PbO and PTO in the nanocolumnar structure leads to a giant c/a ratio of 1.20 (bulk value of 1.06), accompanied by a Ti polarization displacement of 0.48 Å and an effective ferroelectric polarization of 241.7 µC cm^-2 , three times compared to the bulk value. The quantitative atomic-scale strain and polarization analysis on the interphase strain provides an important guideline for designing ferroelectric nanocomposites.

How a Ferroelectric Layer Can Tune a Two-Dimensional Electron Gas at the Interface of LaInO3 and BaSnO3: A First-Principles Study

The emerging interest in two-dimensional electron gases (2DEGs), formed at interfaces between two insulating oxide perovskites, poses a crucial fundamental question in view of future electronic devices. In the framework of density-functional theory, we investigate the possibility to control the characteristics of the 2DEG formed at the LaInO₃/BaSnO₃ interface by including a ferroelectric layer. To do so, we consider BaTiO₃ as a prototype example and examine how the orientation of the ferroelectric polarization impacts density and confinement of the 2DEG. We find that aligning the ferroelectric polarization toward (outward) the LaInO₃/BaSnO₃ interface leads to an accumulation (depletion) of the interfacial 2DEG. Varying its magnitude, we find a linear effect on the 2DEG charge density that is confined within the BaSnO₃ side. Analysis of the optimized geometries reveals that inclusion of the ferroelectric layer makes structural distortions at the LaInO₃/BaSnO₃ junction less pronounced, which, in turn, enhances the 2DEG density. Thicker ferroelectric layers allow for reaching higher polarization magnitude. We discuss the mechanisms behind all these findings and rationalize how the characteristics of both 2DEGs and 2D hole gases can be controlled in the considered heterostructures. Overall, our results can be generalized to other combinations of ferroelectric, polar, and nonpolar materials.

Atomic Insight into the Successive Antiferroelectric-Ferroelectric Phase Transition in Antiferroelectric Oxides

Antiferroelectrics characterized by voltage-driven reversible transitions between antiparallel and parallel polarity are promising for cutting-edge electronic and electrical power applications. Wide-ranging explorations revealing the macroscopic performances and microstructural characteristics of typical antiferroelectric systems have been conducted. However, the underlying mechanism has not yet been fully unraveled, which depends largely on the atomistic processes. Herein, based on atomic-resolution transmission electron microscopy, the deterministic phase transition pathway along with the underlying lattice-by-lattice details in lead zirconate thin films was elucidated. Specifically, we identified a new type of ferrielectric-like dipole configuration with both angular and amplitude modulations, which plays the role of a precursor for a subsequent antiferroelectric to ferroelectric transformation. With the participation of the ferrielectric-like phase, the phase transition pathways driven by the phase boundary have been revealed. We provide new insights into the consecutive phase transformation in low-dimensional lead zirconate, which thus would promote potential antiferroelectric-based multifunctional devices.

Combined experimental and DFT approach to BiNbO4 polymorphs

Here we present a detailed ab initio study of two experimentally synthesized bismuth niobate BiNbO₄ (BNO) polymorphs within the framework of density functional theory (DFT). We synthesized orthorhombic α-BNO and triclinic β-BNO using a solid-state reaction technique. The underlying Pnna and P1̄ crystal symmetries along with their respective phase purity have been confirmed from Rietveld refinement of the powdered X-ray diffraction measurements in combination with generalized gradient approximation of Perdew-Burke-Ernzerhof (GGA-PBE) based DFT simulations. The scanning electron micrographs revealed average grain sizes to be 500 nm and 1 μm for α-BNO and β-BNO respectively. The energy-dispersive X-ray spectroscopy identified the Bi, Nb, and O with proper stoichiometry. The phase purity of the as-synthesized samples was further confirmed by comparing the local density approximation (LDA) norm-conserving pseudo-potential based DFT-simulated Raman peaks with that of experimentally measured ones. The relevant bond vibrations detected in Fourier transform infrared spectroscopy were matched with GGA-PBE derived phonon density of states simulation for both polymorphs. The structural stability and the charge dynamics of the polymorphs were verified from elastic stress and born charge tensor simulations respectively. The dynamical stability of the α-BNO was confirmed from phonon band structure simulation using density functional perturbation theory with Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. The electronic band gaps of 3.08 and 3.36 eV for α-BNO and β-BNO measured from UV-Vis diffuse reflectance measurements were matched with the sophisticated HSE06 band structure simulation by adjusting the Hartree-Fock exchange parameter. Both GGA-PBE and HSE06 functional were used to simulate complex dielectric function and its derivatives with the help of Fermi's golden rule to define the optical properties in the linear regime. All these may have provided a rigorous theoretical analysis for the experimentally synthesized α-BNO and β-BNO polymorphs.

Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

A distinct type of metavalent bonding (MVB) is recently proposed to explain an unusual combination of anomalous functional properties of group IV chalcogenide crystals, whose electronic mechanisms and origin remain controversial. Through theoretical analysis of evolution of bonding along continuous paths in structural and chemical composition space, emergence of MVB in rocksalt chalcogenides is demonstrated as a consequence of weakly broken symmetry of parent simple-cubic crystals of Group V metalloids. High electronic degeneracy at the nested Fermi surface of parent metal drives spontaneous breaking of its translational symmetry with structural and chemical fields, which open up a small energy gap and mediate strong coupling between conduction and valence bands making metavalent crystals highly polarizable, conductive, and sensitive to bond-lengths. Stronger symmetry-breaking structural and chemical fields, however, transform them discontinuously to covalent and ionic semiconducting states. MVB involves bonding-antibonding pairwise interactions alternating along linear chains of at least five atoms, which facilitate long-range electron transfer in response to polar fields causing unusual properties. The precise picture of MVB predicts anomalous second-order Raman scattering as an addition to set off their unusual properties, and will guide in design of new metavalent materials with improved thermoelectric, ferroelectric and nontrivial electronic topological properties.

Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric response in freestanding BiFeO₃ and SrTiO₃ in their bent state arising from strain gradients up to 3.5 × 10⁷ m^-1, suggesting a promising approach for realizing ultra-large polarizations. Additionally, a substantial change in membrane thickness is discovered in bent freestanding BiFeO₃, which implies an unusual bending-expansion/shrinkage effect in the ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical model reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

Nonadiabatic Born Effective Charges in Metals and the Drude Weight

In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective charges that are well defined in the low-frequency limit. In addition, we find that the sublattice sum of the nonadiabatic Born effective charges does not vanish as it does in the insulating case, but instead is proportional to the Drude weight. We demonstrate these formal results with density functional perturbation theory calculations of Al and electron-doped SnS_{2} and SrTiO_{3}.

Chemical design of a new displacive-type ferroelectric

Since the discovery of the ferroelectric perovskite-type oxide BaTiO₃ in 1943, numerous materials have been surveyed as candidates for new ferroelectrics. Perovskite-type materials have played a leading role in basic research and applications of ferroelectric materials since the last century. Experimentalists and theoreticians have developed a new materials design stream for post-perovskite materials. In this stream, we have mainly focused on the role of covalency in the evolution of ferroelectricity for displacive-type ferroelectrics in oxides. This perspective surveys the following topics: (1) crossover from quantum paraelectric to ferroelectric through a ferroelectric quantum critical point, (2) the role of cation-oxygen covalency in ferroelectricity and the crossover to quantum paraelectric in perovskite-type compounds, (3) off-center-induced ferroelectricity in perovskites, (4) second-order Jahn-Teller effect enhancement of ferroelectricity in lithium-niobate-type oxides, (5) the presence of four ferroelectric phases and structural transitions of phases of AFeO₃ with decreasing radius of A (A = La-Al), (6) tetrahedral ferroelectrics of perovskite-related Bi₂SiO₅ and wurtzites, (7) a rare type of polarization switching system in which the coordination number of ions in κ-Al₂O₃ systems changes between 4 and 6, and (8) lone-pair-electron-induced ferroelectrics in langasite-type compounds.

Engineering of atomic-scale flexoelectricity at grain boundaries

Flexoelectricity is a type of ubiquitous and prominent electromechanical coupling, pertaining to the electrical polarization response to mechanical strain gradients that is not restricted by the symmetry of materials. However, large elastic deformation is usually difficult to achieve in most solids, and the strain gradient at minuscule is challenging to control. Here, we exploit the exotic structural inhomogeneity of grain boundary to achieve a huge strain gradient (~1.2 nm-1) within 3-4-unit cells, and thus obtain atomic-scale flexoelectric polarization of up to ~38 μC cm-2 at a 24° LaAlO3 grain boundary. Accompanied by the generation of the nanoscale flexoelectricity, the electronic structures of grain boundaries also become different. Hence, the flexoelectric effect at grain boundaries is essential to understand the electrical activities of oxide ceramics. We further demonstrate that for different materials, altering the misorientation angles of grain boundaries enables tunable strain gradients at the atomic scale. The engineering of grain boundaries thus provides a general and feasible pathway to achieve tunable flexoelectricity.

Electronic structure, phonons and optical properties of baryte type scintillators TlXO4(XCl, Br)

This article thoroughly addresses the structural, mechanical, vibrational, electronic band structure and the optical properties of the unexplored thallous perchlorate and perbromate fromab initiocalculations. The zone centered vibrational phonon frequencies shows, there is a blue shift in the mid and high frequency range from Cl → Br due to change in mass and force constant with respect to oxygen atom. From the band structure it is clear that the top of the valence band is due to thalliumsstates, whereas the bottom of the conduction band is due to halogensand oxygenpstates, showing similar magnitude of dispersion and exhibits a charge transfer character. These characteristics and the band gap obtained are consistent with that of a favourable scintillators. Our findings deliver directions for the design of efficient TlXO₄based scintillators with high performance which are desirable for distinct applications such as medical imaging, high energy physics experiments, nuclear security.

Comparative density functional studies of BiMO3 polymorphs (M = Al, Ga, In) based on LDA, GGA, and meta-GGA functionals

The meta-GGA functionals, MS2 and SCAN, are the only approximations that correctly describe the crystallographic ground-state of BiMO3 (M = Al, Ga, In).

The effect of composition on phonon softening in ABO3-type perovskites: DFT modelling

The influence of the A cation on the ferroelectric instability in ABO3 perovskites, and its associated F1u IR-active phonon mode, is systematically investigated for tantalates, niobates and titanates at the hybrid density-functional theory level.

New multiferroic BiFeO3 with large polarization

BiFeO3 is one of the most widely studied multiferroic materials, because of its large spontaneous polarization at room temperature, as well as ferroelasticity and antiferromagnetism. Using ab initio evolutionary algorithm,...

Semi-Experimental Determination of the Linear Clamped Electro-Optical Coefficients of Polar Crystals from Vibrational Spectroscopic Data

The present work highlights a new general method devoted to computations of the clamped linear electro-optical coefficients from the measured fundamental vibrational frequencies and the nonlinear dielectric susceptibility constants. The calculations are based on the formula analog to that of the Lyddane–Sachs–Teller relation, which is systematically used for the calculations of the clamped linear electro-optical coefficient of oxide ferroelectric crystals such as LiNbO3, LiTaO3, BaTiO3, PbTiO3, and KNbO3. The computed electro-optical coefficients are in good agreement with those obtained from direct measurements and the first-principles calculations or other semi-empirical models. In addition, the famous r51 or r42 coefficients of the tetragonal BaTiO3, PbTiO3, and KNbO3 crystals are finally calculated with high accuracy and discussed in connection with the soft mode behavior.

Two-dimensional ferroelectric metal for electrocatalysis

The coexistence of metallicity and ferroelectricity has been an intriguing and controversial phenomenon as these two material properties are considered incompatible in bulk. We clarify the concept of the ferroelectric metal by revisiting the original definitions for ferroelectric and metal. Two-dimensional (2D) ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal characterized by switchable polarization and non-zero density of states at the Fermi level. We demonstrate that 2D ferroelectric metals can serve as electrically-tunable, high-quality electrocatalysts.

Structural stability and evolution of half-metallicity in Ba2CaMoO6: interplay of hole- and electron-doping

Half-metallic ferromagnetic materials have attracted a lot of attention due to their probable technological applications in spintronics. In this respect, doping plays a crucial role in tailoring or controlling the physical properties of the system. Herein, the impact of both hole and electron doping on the structural, electronic and magnetic properties of the recent high pressure synthesized non-magnetic insulator Ba₂CaMoO₆ double perovskite oxide are investigated by replacing one of the Mo ions with Nb and Tc. The structural and mechanical stability of the undoped/doped materials are analyzed by calculating the formation energies and stiffness tensors, respectively, which confirm the system's stability. Interestingly, our results revealed that Nb- and Tc-doped systems display an electronic transition from insulating to p- and n-type half-metallic ferromagnetic states, respectively. The most striking feature of the present study is that oxygen ions become spin-polarized, with a magnetic moment of ∼0.12 μ_B per atom, and are mainly responsible for conductivity in the Nb-doped system. However, the admixture of Tc 4d non-degenerate orbitals are primarily contributing to the metallicity in the Tc-doped structure, with a moment of ∼0.59 μ_B. It is also found that Nb and Tc ions remain in the 5+ and 7+ states with electronic configurations of t22g↑t22g↓e0g↑e0g↓ and t32g↑t22g↓e0g↑e0g↓, with spin states of S = 0 and S = 1/2 in the individual doped systems, respectively. Hence, the present work proposes that a doping strategy with a suitable candidate could be beneficial to tune the physical properties of the materials for their potential utilization in advanced spin-based devices.

A linear scaling law for predicting phase transition temperature via averaged effective electronegativity derived from A2M3O12-based compounds

The chemical flexibility of A₂M₃O₁₂-based compounds enables the design of materials with versatile functionalities such as ferroelastic switching, ion conduction and negative thermal expansion (NTE) above the ferroelastic transition temperature (T_t), which is promising for a variety of applications. Quantitative prediction of T_t is essential but lacking. Herein we propose a concept of averaged effective electronegativity (AEE) and establish a linear relationship between the T_t and AEE for A₂M₃O₁₂-based compounds. The linear scaling law is validated using first principles calculations of the effective charge on oxygen and its effectiveness is verified experimentally by designing high entropy compounds Sc_x1Zr_x2Hf_x3Fe_x4Mo_y1V_y2O₁₂ and a NTE compound Zr₂MoVPO₁₂ with expected T_t. Generalization of the linear scaling law to other NTE oxides with displacive phase transition is also demonstrated. The findings can be used as a simple and effective approach to guide the design of novel compounds with desired properties and T_t.

The CdTiO3/BaTiO3 superlattice interface from first principles

The oxide interface has been studied extensively in the past decades and exhibits different physical properties from the constituent bulks. Using first-principles electronic structure calculations, we investigated the interface of CdTiO₃/BaTiO₃ (CTO/BTO) superlattice with ferroelectric BaTiO₃. In this case, the conduction bands of CdTiO₃ are composed of Cd-5s orbitals with low electron effective mass and nondegenerate dispersion, and thus expected to have high mobility. We predicted a controllable conductivity at the interface, and further analyzed how the polarization direction and strength affect the conductivity. We also explored the relationship between two components: thickness and polarization. Intriguingly, the total polarization in CTO/BTO might be even larger than that of ferroelectric bulk BaTiO₃. Therefore, we found a way to maximize the superlattice polarization by increasing the fraction of the CdTiO₃ layers, based on the interesting dependence of the total polarization and CTO/BTO ratio.

Creating polar antivortex in PbTiO3/SrTiO3 superlattice

Nontrivial topological structures offer a rich playground in condensed matters and promise alternative device configurations for post-Moore electronics. While recently a number of polar topologies have been discovered in confined ferroelectric PbTiO3 within artificially engineered PbTiO3/SrTiO3 superlattices, little attention was paid to possible topological polar structures in SrTiO3. Here we successfully create previously unrealized polar antivortices within the SrTiO3 of PbTiO3/SrTiO3 superlattices, accomplished by carefully engineering their thicknesses guided by phase-field simulation. Field- and thermal-induced Kosterlitz-Thouless-like topological phase transitions have also been demonstrated, and it was discovered that the driving force for antivortex formation is electrostatic instead of elastic. This work completes an important missing link in polar topologies, expands the reaches of topological structures, and offers insight into searching and manipulating polar textures.

Crystal structure and phase transition of TlReO4: a combined experimental and theoretical study

The present work describes a density-functional theory (DFT) study of TlReO₄ in combination with powder x-ray diffraction experiments as a function of temperature and Raman measurements at ambient temperature. X-ray diffraction measurements reveal three different structures as a function of temperature. A monoclinic structure (space group P2₁/c) is observed at room temperature while two isostructural tetragonal structures (space group I4₁/a) are found at low- and high-temperature. In order to complement the experimental results first-principles DFT calculations were performed to compute the structural energy differences. From the total energies it is evident that the monoclinic structure has the lowest total energy when compared to the orthorhombic structure, which was originally proposed to be the structure at room temperature, which agrees with our experiments. The structural and vibrational properties of the low- and room-temperature phase of TlReO₄ have been calculated using DFT. Inclusion of van der Waals correction to the standard DFT exchange correlation functional is found to improve the agreement with the observed structural and vibrational properties. The Born effective charge of these phases has also been studied which shows a combination of ionic and covalent nature, resembling metavalent bonding. Calculations of zone-center phonon frequencies lead to the symmetry assignment of previously reported low-temperature Raman modes. We have determined the frequencies of the eight infrared-active, 13 Raman-active and three silent modes of low-temperature TlReO₄ along with 105 infrared-active and 108 Raman-active modes for room-temperature TlReO₄. Phonons of these two phases of TlReO₄ are mainly divided into three regions which are below 150 cm^-1 due to vibration of whole crystal, 250 to 400 cm^-1 due to wagging, scissoring, rocking and twisting and above 900 cm^-1 due to stretching in ReO₄ tetrahedron. The strongest infrared peak is associated to the internal asymmetric stretching of ReO₄ whereas the strongest Raman peak is associated to the internal symmetric stretching of ReO₄. We have also measured the room-temperature Raman spectra of monoclinic TlReO₄ identifying up to 28 modes. This Raman spectrum has been interpreted by comparison with the previously reported Raman frequencies of the low-temperature phase and our calculated Raman frequencies of low- and room-temperature phases of TlReO₄.

Intrinsic Valley Polarization and High-Temperature Ferroelectricity in Two-Dimensional Orthorhombic Lead Oxide

Recent years have witnessed a surge of research in two-dimensional (2D) ferroelectric structures that may circumvent the depolarization effect in conventional perovskite oxide films. Herein, by first-principles calculations, we predict that an orthorhombic phase of lead(II) oxide, PbO, serves as a promising candidate for 2D ferroelectrics with good stability. With a semiconducting nature, 2D ferroelectric PbO exhibits intrinsic valley polarization, which leads to robust ferroelectricity with an in-plane spontaneous polarization of 2.4 × 10^-10 C/m and a Curie temperature of 455 K. Remarkably, we reveal that the ferroelectricity is strain-tunable, and ferroelasticity coexists in the PbO film, implying the realization of 2D multiferroics. The underlying physical mechanism is generally applicable and can be extended to other oxide films such as ferroelectric SnO and GeO, thus paving an avenue for future design and fabrication of functional ultrathin devices that are compatible with Si-based technology.

Topological phonons in oxide perovskites controlled by light

Perovskite oxides exhibit a rich variety of structural phases hosting different physical phenomena that generate multiple technological applications. We find that topological phonons-nodal rings, nodal lines, and Weyl points-are ubiquitous in oxide perovskites in terms of structures (tetragonal, orthorhombic, and rhombohedral), compounds (BaTiO₃, PbTiO₃, and SrTiO₃), and external conditions (photoexcitation, strain, and temperature). In particular, in the tetragonal phase of these compounds, all types of topological phonons can simultaneously emerge when stabilized by photoexcitation, whereas the tetragonal phase stabilized by thermal fluctuations only hosts a more limited set of topological phonon states. In addition, we find that the photoexcited carrier concentration can be used to tune the topological phonon states and induce topological transitions even without associated structural phase changes. Overall, we propose oxide perovskites as a versatile platform in which to study topological phonons and their manipulation with light.

Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern

Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable pattern of octahedral rotation leads to robust room-temperature ferroelectricity in CaTiO3, which is otherwise nonpolar down to 0 K. Guided by density-functional theory, we selectively stabilize the metastable pattern, distinct from the equilibrium pattern and cooperative with ferroelectricity, in heteroepitaxial films of CaTiO3. Atomic-scale imaging combined with deep neural network analysis confirms a close correlation between the metastable pattern and ferroelectricity. This work reveals a hidden but functional pattern of oxygen octahedral rotation and opens avenues for designing multifunctional materials.

Polar Nanodomains in a Ferroelectric Superconductor

The mechanisms by which itinerant carriers compete with polar crystal distortions are a key unresolved issue for polar superconductors, which offer new routes to unconventional Cooper pairing. Strained, doped SrTiO₃ films undergo successive ferroelectric and superconducting transitions, making them ideal candidates to elucidate the nature of this competition. Here, we reveal these interactions using scanning transmission electron microscopy studies of the evolution of polar nanodomains as a function of doping. These nanodomains are a precursor to the ferroelectric phase and a measure of long-range Coulomb interactions. With increasing doping, the magnitude of the polar displacements, the nanodomain size, and the Curie temperature are systematically suppressed. In addition, we show that disorder caused by the dopant atoms themselves presents a second contribution to the destabilization of the ferroelectric state. The results provide evidence for two distinct mechanisms that suppress the polar transition with doping in a ferroelectric superconductor.

Superhigh flexibility and out-of-plane piezoelectricity together with strong anharmonic phonon scattering induced extremely low lattice thermal conductivity in hexagonal buckled CdX (XS, Se) monolayers

Although CdX (X = S, Se) has been mostly studied in the field of photocatalysis, photovoltaics, their intrinsic properties, such as, mechanical, piezoelectric, electron and phonon transport properties have been completely overlooked in buckled CdX monolayers. Ultra-low lattice thermal conductivity [1.08 W m-1K-1(0.75 W m-1K-1)] and high p-type Seebeck coefficient [1300μV K-1(850μV K-1)] in CdS (CdSe) monolayers have been found in this work based on first-principles DFT coupled to semi-classical Boltzmann transport equations, combining both the electronic and phononic transport. The dimensionless thermoelectric figure of merit is calculated to be 0.78 (0.5) in CdS (CdSe) monolayers at room temperature, which is comparable to that of two-dimensional (2D) tellurene (0.8), arsenene and antimonene (0.8), indicating its great potential for applications in 2D thermoelectrics. Such a low lattice thermal conductivity arise from the participation of both acoustic [91.98% (89.22%)] and optical modes [8.02% (10.78%)] together with low Debye temperature [254 K (187 K)], low group velocity [4 km s-1(3 km s-1)] in CdS (CdSe) monolayers, high anharmonicity and short phonon lifetime. Substantial cohesive energy (∼4-5 eV), dynamical and mechanical stability of the monolayers substantiate the feasibility in synthesizing the single layers in experiments. The inversion symmetry broken along thezdirection causes out-of-plane piezoelectricity. |d33| ∼ 21.6 pm V-1, calculated in CdS monolayer is found to be the highest amongst structures having atomic-layer thickness. Superlow Young's modulus ∼41 N m-1(31 N m-1) in CdS (CdSe) monolayers, which is comparable to that of planar CdS (29 N m-1) and TcTe2(34 N m-1), is an indicator of its superhigh flexibility. Direct semiconducting band gap, high carrier mobility (∼500 cm2V-1s-1) and superhigh flexibility in CdX monolayers signify its gigantic potential for applications in ultrathin, stretchable and flexible nanoelectronics. The all-round properties can be synergistically combined together in futuristic applications in nano-piezotronics as well.

Ultra-low lattice thermal conductivity and giant phonon-electric field coupling in hafnium dichalcogenide monolayers

Phonons in crystalline solids are of utmost importance in governing its lattice thermal conductivity (k L). In this work, k L in hafnium (Hf) dichalcogenide monolayers has been investigated based on ab initio DFT coupled to linearized Boltzmann transport equation together with single-mode relaxation-time approximation. Ultra-low k L found in HfS2 (2.19 W m-1 K-1), HfSe2 (1.23 W m-1 K-1) and HfSSe (1.78 W m-1 K-1) monolayers at 300 K, is comparable to that of the state-of-art bulk thermoelectric materials, such as, Bi2Te3 (1.6 W m-1 K-1), PbTe (2.2 W m-1 K-1) and SnSe (2.6 W m-1 K-1). Gigantic longitudinal-transverse optical (LO-TO) splitting of up to 147.7 cm-1 is noticed at the Brillouin zone-centre (Γ-point), which is much higher than that in MoS2 single layer (∼2 cm-1). It is driven by the colossal phonon-electric field coupling arising from the domination of ionic character in the interatomic bonds and Born effective or dynamical charges as high as 7.4e on the Hf ions, which is seven times that on Mo in MoS2 single layer. Enhancement in k L occurs in HfS2 (2.19 to 4.1 W m-1 K-1), HfSe2 (1.23 to 1.7 W m-1 K-1) and HfSSe (1.78 to 2.2 W m-1 K-1) upon the incorporation of the non-analytic correction term. Furthermore, the mode Grüneisen parameter is calculated to be as high as ∼2.0, at room temperature, indicating a strong anharmonicity. Moreover, the contribution of optical phonons to k L is found to be ∼12%, which is significantly high than that in single-layer MoS2. Large atomic mass of Hf (178.5 u), small phonon group velocities (4-5 km s-1), low Debye temperature (∼166 K), low bond and elastic stiffness (Young's modulus ∼75 N m-1), small phonon lifetimes (∼6 ps), low specific heat capacity (∼17 J K-1 mol-1) and strong anharmonicity are collectively found to be the factors responsible for such a low k L. These findings would be immensely helpful in designing thermoelectric interconnects at the nanoscale and 2D material-based energy harvesters.

Infrared lattice dynamics in negative thermal expansion material in single-crystal ScF3

Simple cubic 'open' perovskite ScF₃ stands out among trifluoride materials in its large, isotropic negative thermal expansion (NTE), but also its proximity of its zero-temperature state to a structural phase transition. Here we report a temperature- and frequency-dependent lattice dynamical study of Brillouin zone center lattice excitations of single crystals of ScF₃ using infrared reflectivity measurements. In addition to quantifying the mode strengths and energies in single crystals of this interesting material, we also find strong evidence for multiphonon absorption processes which excite the zone-edge incipient soft modes associated with NTE and the structural quantum phase transition. In this way, we identify an optically-allowed pathway to excite soft modes provides a means to athermally populate modes associated with NTE in ScF₃.

Electrospinning Piezoelectric Fibers for Biocompatible Devices

The field of nanotechnology has been gaining great success due to its potential in developing new generations of nanoscale materials with unprecedented properties and enhanced biological responses. This is particularly exciting using nanofibers, as their mechanical and topographic characteristics can approach those found in naturally occurring biological materials. Electrospinning is a key technique to manufacture ultrafine fibers and fiber meshes with multifunctional features, such as piezoelectricity, to be available on a smaller length scale, thus comparable to subcellular scale, which makes their use increasingly appealing for biomedical applications. These include biocompatible fiber-based devices as smart scaffolds, biosensors, energy harvesters, and nanogenerators for the human body. This paper provides a comprehensive review of current studies focused on the fabrication of ultrafine polymeric and ceramic piezoelectric fibers specifically designed for, or with the potential to be translated toward, biomedical applications. It provides an applicative and technical overview of the biocompatible piezoelectric fibers, with actual and potential applications, an understanding of the electrospinning process, and the properties of nanostructured fibrous materials, including the available modeling approaches. Ultimately, this review aims at enabling a future vision on the impact of these nanomaterials as stimuli-responsive devices in the human body.

Anion order in perovskite oxynitrides AMO2N (A = Ba, Sr, Ca; M = Ta, Nb): a first-principles based investigation

Perovskite-type oxynitrides have attracted a lot of research interest as emerging functional materials with promising wide applications. The ordering of O/N anions in perovskite oxynitrides plays an important role in determining their physical properties, while it is still challenging to characterize the actual anion order in a particular material and understand the underlying physics. In this work, we have investigated anion order in a series of perovskite oxynitrides AMO₂N (A = Ba, Sr, Ca; M = Ta, Nb) through first-principles calculations and the cluster-expansion-model-based Monte Carlo simulations. In terms of cluster correlation functions, it can be explicitly demonstrated that short-range anion order is present in all these perovskite oxynitrides. In addition, the anion order varies with the temperature of thermal equilibrium and depends on the cation type. Special quasi-ordered structures are then constructed as representative structures by taking the calculated anion order at finite temperature into consideration and their band gaps and dielectric tensors are predicted by first-principles calculations and compared to experimental values.

Anion order in perovskite oxynitrides is investigated by a combination of first-principles calculations, cluster expansion method and Monte Carlo simulations.

Uncompensated Polarization in Incommensurate Modulations of Perovskite Antiferroelectrics

Complex polar structures of incommensurate modulations (ICMs) are revealed in chemically modified PbZrO_{3} perovskite antiferroelectrics using advanced transmission electron microscopy techniques. The Pb-cation displacements, previously assumed to arrange in a fully compensated antiparallel fashion, are found to be either antiparallel, but with different magnitudes, or in a nearly orthogonal arrangement in adjacent stripes in the ICMs. Ab initio calculations corroborate the low-energy state of these arrangements. Our discovery corrects the atomic understanding of ICMs in PbZrO_{3}-based perovskite antiferroelectrics.

Subunit cell-level measurement of polarization in an individual polar vortex

Recently, several captivating topological structures of electric dipole moments (e.g., vortex, flux closure) have been reported in ferroelectrics with reduced size/dimensions. However, accurate polarization distribution of these topological ferroelectric structures has never been experimentally obtained. We precisely measure the polarization distribution of an individual ferroelectric vortex in PbTiO₃/SrTiO₃ superlattices at the subunit cell level by using the atomically resolved integrated differential phase contrast imaging in an aberration-corrected scanning transmission electron microscope. We find, in vortices, that out-of-plane polarization is larger than in-plane polarization, and that downward polarization is larger than upward polarization. The polarization magnitude is closely related to tetragonality. Moreover, the contribution of the Pb─O bond to total polarization is highly inhomogeneous in vortices. Our precise measurement at the subunit cell scale provides a sound foundation for mechanistic understanding of the structure and properties of a ferroelectric vortex and lattice-charge coupling phenomena in these topological ferroelectric structures.

Categories of Phononic Topological Weyl Open Nodal Lines and a Potential Material Candidate: Rb2Sn2O3

The phononic topological Weyl closed nodal lines, including Weyl nodal rings, nodal chains, nodal nets, nodal links, and nodal knots, have been widely studied. The phononic topological Weyl open nodal lines (PTWONLs), however, have not been well investigated so far. By analyzing the coexistence of parity inversion and time-reversal symmetries, we found that the PTWONLs can be divided into three categories, with surface states hosting different shapes and positions in the Brillouin zone (BZ). Specifically, semiconducting Rb₂Sn₂O₃ was found to exhibit perfect PTWONLs in its phonon spectrum, which fills up one of the categories. Numerical calculations showed that the drumhead-like surface states exist on the (010) surface and six PTWONLs appear in the first BZ due to the C₃ rotation symmetry in the crystal structure. Their topological nontrivial nature was confirmed by calculating the Berry phase and by the linear phononic bands around the Weyl points. These theoretical findings provide a deep understanding into the phononic Weyl-open-nodal-line physics, and a promising candidate for experimental verification.

Enhancing superconductivity in SrTiO3 films with strain

The nature of superconductivity in SrTiO₃, the first oxide superconductor to be discovered, remains a subject of intense debate several decades after its discovery. SrTiO₃ is also an incipient ferroelectric, and several recent theoretical studies have suggested that the two properties may be linked. To investigate whether such a connection exists, we grew strained, epitaxial SrTiO₃ films, which are known to undergo a ferroelectric transition. We show that, for a range of carrier densities, the superconducting transition temperature is enhanced by up to a factor of two compared to unstrained films grown under the same conditions. Moreover, for these films, superconductivity emerges from a resistive state. We discuss the localization behavior in the context of proximity to ferroelectricity. The results point to new opportunities to enhance superconducting transition temperatures in oxide materials.

Theoretical investigation of the platinum substrate influence on BaTiO3 thin film polarisation

Density functional theory calculations are performed to study the out-of-plane polarisation in BaTiO3 (BTO) thin films epitaxially grown on platinum. Prior to any polarisation calculation, the stability of the Pt(001)/BaTiO3(001) structure is thoroughly discussed. In particular, the nature of the Pt/BTO and BTO/vacuum interfaces is characterised. The growth of BTO is shown to start with a TiO2 layer while the nature of the surface termination does not broadly modify the stability. Therefore both upper terminations are considered when describing the ferroelectric behaviour in Pt/BTO interfaces. The geometric and electronic effects of the substrate on the polarisation are investigated. To isolate the electronic influence of platinum, the out-of-plane polarisation in Pt/BTO systems is compared to the one in isolated BTO slabs constrained to the same lattice mismatch induced by the epitaxial growth on platinum. The ferroelectric phase is favoured as soon as the thickness is larger than 23 Å, both for isolated and deposited BTO, for the smallest width. The Pt substrate will modify the size of polarisation domains, while an upper BaO layer through the use of asymmetric [TiO2/BaO] systems will induce an increase of the polarisation. One could take advantage of this experimentally.

Metal–Organic Frameworks (MOFs) as Potential Hybrid Ferroelectric Materials

This chapter presents new findings of intrinsic and induced ferroelectricity in Metal–Organic Frameworks (MOFs) with a polar system, capable of forming an electronic structure in an asymmetric lattice. Multiple experimental techniques and simulation methods are reviewed in detail. The characteristics of ferroelectrics such as discontinuity in temperature-dependent dielectric constant, polarization hysteresis loops, etc. have been observed from several MOF large crystals and crystalline powders. A relationship between polarization and bond polarity for MOFs has been established. In addition, we emphasize the significance of mechanical strength of MOFs in real applications. This chapter reviews MOF materials for energy storage and utilization, aiming to provide an insight into the design of novel MOF-based ferroelectrics.