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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Roy S, Joseph A, Zhang X, Bhattacharyya S, Puthirath AB, Biswas A, Tiwary CS, Vajtai R, Ajayan PM. Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage. Chem Rev 2024; 124:9376-9456. [PMID: 39042038 DOI: 10.1021/acs.chemrev.3c00937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Antony Joseph
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Abhijit Biswas
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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3
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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4
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Munson KT, Torsi R, Mathela S, Feidler MA, Lin YC, Robinson JA, Asbury JB. Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS 2. J Phys Chem Lett 2024:7850-7856. [PMID: 39052863 DOI: 10.1021/acs.jpclett.4c01578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.
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Affiliation(s)
- Kyle T Munson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shreya Mathela
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maxwell A Feidler
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City 300, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - John B Asbury
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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5
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Chen HY, Hsu HC, Liang JY, Wu BH, Chen YF, Huang CC, Li MY, Radu IP, Chiu YP. Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors. ACS NANO 2024; 18:17622-17629. [PMID: 38922204 PMCID: PMC11238616 DOI: 10.1021/acsnano.4c02066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.
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Affiliation(s)
- Hao-Yu Chen
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Hung-Chang Hsu
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jhih-Yuan Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Hong Wu
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yi-Feng Chen
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chuan-Chun Huang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yang Li
- Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan
| | - Iuliana P Radu
- Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan
| | - Ya-Ping Chiu
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan
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6
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Sredenschek AJ, Sanchez DE, Wang J, Lei Y, Sinnott SB, Terrones M. Heterostructures coupling ultrathin metal carbides and chalcogenides. NATURE MATERIALS 2024; 23:460-469. [PMID: 38561520 DOI: 10.1038/s41563-024-01827-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 01/22/2024] [Indexed: 04/04/2024]
Abstract
Non-layered transition metal carbides (TMCs) and layered transition metal dichalcogenides (TMDs) are two well-studied material families that have individually received considerable attention over the past century. In recent years, with the shift towards two-dimensional materials and heterostructures, a field has emerged that is focused on the structure and properties of TMC/TMD heterostructures, which through chemical conversion exhibit diverse types of heterostructure configuration that host coupled 2D-3D interfaces, giving rise to exotic properties. In this Review, we highlight experimental and computational efforts to understand the routes to fabricate TMC/TMD heterostructures. Furthermore, we showcase how controlling these heterostructures can lead to emergent electronic transport, optical properties and improved catalytic properties.
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Affiliation(s)
- Alexander J Sredenschek
- Department of Physics, The Pennsylvania State University, University Park, PA, USA
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
| | - David Emanuel Sanchez
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Jiayang Wang
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Yu Lei
- Institute of Materials Research & Center of Double Helix & Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Tsinghua Shenzhen International Graduate School, Shenzhen, China
| | - Susan B Sinnott
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
- Department of Chemistry, The Pennsylvania State University, University Park, PA, USA.
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University, University Park, PA, USA.
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
- Department of Chemistry, The Pennsylvania State University, University Park, PA, USA.
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7
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Chen Y, Liu H, Yu G, Ma C, Xu Z, Zhang J, Zhang C, Chen M, Li D, Zheng W, Luo Z, Yang X, Li K, Yao C, Zhang D, Xu B, Yi J, Yi C, Li B, Zhang H, Zhang Z, Zhu X, Li S, Chen S, Jiang Y, Pan A. Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312425. [PMID: 38146671 DOI: 10.1002/adma.202312425] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 12/10/2023] [Indexed: 12/27/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.
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Affiliation(s)
- Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guoliang Yu
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zheyuan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jinding Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Mingxing Chen
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Weihao Zheng
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan, 410073, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Kaihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chen Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Bo Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Hongmei Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zucheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Siyu Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
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8
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Li Z, Chen Z, Xiao L, Zhou X, Zhao C, Zhang Y. Extremely Enhanced Photoluminescence in MoS 2-Derived Quantum Sheets. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38470979 DOI: 10.1021/acsami.3c17934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.
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Affiliation(s)
- Zhangqiang Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhexue Chen
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liuyang Xiao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xuanping Zhou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ce Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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9
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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10
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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11
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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12
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Ho PH, Yang YY, Chou SA, Cheng RH, Pao PH, Cheng CC, Radu I, Chien CH. High-Performance WSe 2 Top-Gate Devices with Strong Spacer Doping. NANO LETTERS 2023; 23:10236-10242. [PMID: 37906707 DOI: 10.1021/acs.nanolett.3c02757] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.
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Affiliation(s)
- Po-Hsun Ho
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan
| | - Yu-Ying Yang
- Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Sui-An Chou
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan
| | - Ren-Hao Cheng
- Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Po-Heng Pao
- Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Chao-Ching Cheng
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan
| | - Iuliana Radu
- Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu 300091, Taiwan
| | - Chao-Hsin Chien
- Department of Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
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13
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Hou T, Li D, Qu Y, Hao Y, Lai Y. The Role of Carbon in Metal-Organic Chemical Vapor Deposition-Grown MoS 2 Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7030. [PMID: 37959627 PMCID: PMC10647219 DOI: 10.3390/ma16217030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 10/20/2023] [Accepted: 11/01/2023] [Indexed: 11/15/2023]
Abstract
Acquiring homogeneous and reproducible wafer-scale transition metal dichalcogenide (TMDC) films is crucial for modern electronics. Metal-organic chemical vapor deposition (MOCVD) offers a promising approach for scalable production and large-area integration. However, during MOCVD synthesis, extraneous carbon incorporation due to organosulfur precursor pyrolysis is a persistent concern, and the role of unintentional carbon incorporation remains elusive. Here, we report the large-scale synthesis of molybdenum disulfide (MoS2) thin films, accompanied by the formation of amorphous carbon layers. Using Raman, photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM), we confirm how polycrystalline MoS2 combines with extraneous amorphous carbon layers. Furthermore, by fabricating field-effect transistors (FETs) using the carbon-incorporated MoS2 films, we find that traditional n-type MoS2 can transform into p-type semiconductors owing to the incorporation of carbon, a rare occurrence among TMDC materials. This unexpected behavior expands our understanding of TMDC properties and opens up new avenues for exploring novel device applications.
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Affiliation(s)
- Tianyu Hou
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Di Li
- Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
| | - Yan Qu
- The Sixth Element (Changzhou) Materials Technology Co., Ltd. and Jiangsu Jiangnan Xiyuan Graphene Technology Co., Ltd., Changzhou 213161, China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Yun Lai
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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14
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Chitara B, Dimitrov E, Liu M, Seling TR, Kolli BSC, Zhou D, Yu Z, Shringi AK, Terrones M, Yan F. Charge Transfer Modulation in Vanadium-Doped WS 2 /Bi 2 O 2 Se Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302289. [PMID: 37310414 DOI: 10.1002/smll.202302289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2023] [Revised: 05/23/2023] [Indexed: 06/14/2023]
Abstract
The field of photovoltaics is revolutionized in recent years by the development of two-dimensional (2D) type-II heterostructures. These heterostructures are made up of two different materials with different electronic properties, which allows for the capture of a broader spectrum of solar energy than traditional photovoltaic devices. In this study, the potential of vanadium (V)-doped WS2 is investigated, hereafter labeled V-WS2 , in combination with air-stable Bi2 O2 Se for use in high-performance photovoltaic devices. Various techniques are used to confirm the charge transfer of these heterostructures, including photoluminescence (PL) and Raman spectroscopy, along with Kelvin probe force microscopy (KPFM). The results show that the PL is quenched by 40%, 95%, and 97% for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se, and 2 at.% V-WS2 /Bi2 O2 Se, respectively, indicating a superior charge transfer in V-WS2 /Bi2 O2 Se compared to pristine WS2 /Bi2 O2 Se. The exciton binding energies for WS2 /Bi2 O2 Se, 0.4 at.% V-WS2 /Bi2 O2 Se and 2 at.% V-WS2 /Bi2 O2 Se heterostructures are estimated to be ≈130, 100, and 80 meV, respectively, which is much lower than that for monolayer WS2 . These findings confirm that by incorporating V-doped WS2 , charge transfer in WS2 /Bi2 O2 Se heterostructures can be tuned, providing a novel light-harvesting technique for the development of the next generation of photovoltaic devices based on V-doped transition metal dichalcogenides (TMDCs)/Bi2 O2 Se.
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Affiliation(s)
- Basant Chitara
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC, 27707, USA
| | - Edgar Dimitrov
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mingzu Liu
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Tank R Seling
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC, 27707, USA
| | - Bhargava S C Kolli
- Department of Biology, University of Florida, Gainesville, FL, 32611, USA
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Amit K Shringi
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC, 27707, USA
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Fei Yan
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC, 27707, USA
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15
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Torsi R, Munson KT, Pendurthi R, Marques E, Van Troeye B, Huberich L, Schuler B, Feidler M, Wang K, Pourtois G, Das S, Asbury JB, Lin YC, Robinson JA. Dilute Rhenium Doping and its Impact on Defects in MoS 2. ACS NANO 2023; 17:15629-15640. [PMID: 37534591 DOI: 10.1021/acsnano.3c02626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/04/2023]
Abstract
Substitutionally doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional rhenium (Re) doping of MoS2 monolayers with controllable concentrations down to 500 ppm by metal-organic chemical vapor deposition (MOCVD). Surprisingly, we discover that even trace amounts of Re lead to a reduction in sulfur site defect density by 5-10×. Ab initio models indicate the origin of the reduction is an increase in the free-energy of sulfur-vacancy formation at the MoS2 growth-front when Re is introduced. Defect photoluminescence (PL) commonly seen in undoped MOCVD MoS2 is suppressed by 6× at 0.05 atomic percent (at. %) Re and completely quenched with 1 at. % Re. Furthermore, we find that Re-MoS2 transistors exhibit a 2× increase in drain current and carrier mobility compared to undoped MoS2, indicating that sulfur vacancy reduction improves carrier transport in the Re-MoS2. This work provides important insights on how dopants affect 2D semiconductor growth dynamics, which can lead to improved crystal quality and device performance.
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Affiliation(s)
- Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kyle T Munson
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rahul Pendurthi
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Esteban Marques
- Imec, Leuven 3001, Belgium
- Department of Molecular Design and Synthesis, KU Leuven, Celestijnenlaan 200f - Postbox 2404, 3001 Leuven, Belgium
| | | | - Lysander Huberich
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Bruno Schuler
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Maxwell Feidler
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | | | - Saptarshi Das
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - John B Asbury
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 University Road, Hsinchu City, 300093, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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16
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Zhang T, Voshell A, Zhou D, Ward ZD, Yu Z, Liu M, Díaz Aponte KO, Granzier-Nakajima T, Lei Y, Liu H, Terrones H, Elías AL, Rana M, Terrones M. Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS 2/Ge heterostructures. NANOSCALE 2023; 15:12348-12357. [PMID: 37449871 DOI: 10.1039/d3nr00961k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The ultraflat and dangling bond-free features of two-dimensional (2D) transition metal dichalcogenides (TMDs) endow them with great potential to be integrated with arbitrary three-dimensional (3D) substrates, forming mixed-dimensional 2D/3D heterostructures. As examples, 2D/3D heterostructures based on monolayer TMDs (e.g., WS2) and bulk germanium (Ge) have become emerging candidates for optoelectronic applications, such as ultrasensitive photodetectors that are capable of detecting broadband light from the mid-infrared (IR) to visible range. Currently, the study of WS2/Ge(100) heterostructures is in its infancy and it remains largely unexplored how sample preparation conditions and different substrates affect their photoluminescence (PL) and other optoelectronic properties. In this report, we investigated the PL quenching effect in monolayer WS2/Ge heterostructures prepared via a wet transfer process, and employed PL spectroscopy and atomic force microscopy (AFM) to demonstrate that post-transfer low-pressure annealing improves the interface quality and homogenizes the PL signal. We further studied and compared the temperature-dependent PL emissions of WS2/Ge with those of as-grown WS2 and WS2/graphene/Ge heterostructures. The results demonstrate that the integration of WS2 on Ge significantly quenches the PL intensity (from room temperature down to 80 K), and the PL quenching effect becomes even more prominent in WS2/graphene/Ge heterostructures, which is likely due to synergistic PL quenching effects induced by graphene and Ge. Density functional theory (DFT) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional calculations show that the interaction of WS2 and Ge is stronger than in adjacent layers of bulk WS2, thus changing the electronic band structure and making the direct band gap of monolayer WS2 less accessible. By understanding the impact of post-transfer annealing and substrate interactions on the optical properties of monolayer TMD/Ge heterostructures, this study contributes to the exploration of the processing-properties relationship and may guide the future design and fabrication of optoelectronic devices based on 2D/3D heterostructures of TMDs/Ge.
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Affiliation(s)
- Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Andrew Voshell
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Da Zhou
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Zachary D Ward
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
| | - Mingzu Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Kevin O Díaz Aponte
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Tomotaroh Granzier-Nakajima
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yu Lei
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - He Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
| | - Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Ana Laura Elías
- Department of Physics, Binghamton University, Binghamton, NY 13902, USA
| | - Mukti Rana
- Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA
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17
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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18
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He W, Kong L, Yu P, Yang G. Record-High Work-Function p-Type CuBiP 2 Se 6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209995. [PMID: 36640444 DOI: 10.1002/adma.202209995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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19
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Ho PH, Chang JR, Chen CH, Hou CH, Chiang CH, Shih MC, Hsu HC, Chang WH, Shyue JJ, Chiu YP, Chen CW. Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics. ACS NANO 2023; 17:2653-2660. [PMID: 36716244 DOI: 10.1021/acsnano.2c10631] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq-1 without gating) of monolayer MoS2 and a high mobility and carrier concentration (4.1 × 1013 cm-2). We employed our robust method for the successful contact doping of a monolayer MoS2 Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.
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Affiliation(s)
- Po-Hsun Ho
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, Taiwan
| | - Jun-Ru Chang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chun-Hsiang Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Cheng-Hung Hou
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Chun-Hao Chiang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Min-Chuan Shih
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Hung-Chang Hsu
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Ya-Ping Chiu
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 106, Taiwan
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20
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Zhang T, Liu M, Fujisawa K, Lucking M, Beach K, Zhang F, Shanmugasundaram M, Krayev A, Murray W, Lei Y, Yu Z, Sanchez D, Liu Z, Terrones H, Elías AL, Terrones M. Spatial Control of Substitutional Dopants in Hexagonal Monolayer WS 2 : The Effect of Edge Termination. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205800. [PMID: 36587989 DOI: 10.1002/smll.202205800] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 11/20/2022] [Indexed: 06/17/2023]
Abstract
The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving desired physicochemical properties. Substitutional doping with adjustable doping levels has been previously demonstrated in 2D transition metal dichalcogenides (TMDs); however, the spatial control of dopant distribution remains an open field. In this work, edge termination is demonstrated as an important characteristic of 2D TMD monocrystals that affects the distribution of substitutional dopants. Particularly, in chemical vapor deposition (CVD)-grown monolayer WS2 , it is found that a higher density of transition metal dopants is always incorporated in sulfur-terminated domains when compared to tungsten-terminated domains. Two representative examples demonstrate this spatial distribution control, including hexagonal iron- and vanadium-doped WS2 monolayers. Density functional theory (DFT) calculations are further performed, indicating that the edge-dependent dopant distribution is due to a strong binding of tungsten atoms at tungsten-zigzag edges, resulting in the formation of open sites at sulfur-zigzag edges that enable preferential dopant incorporation. Based on these results, it is envisioned that edge termination in crystalline TMD monolayers can be utilized as a novel and effective knob for engineering the spatial distribution of substitutional dopants, leading to in-plane hetero-/multi-junctions that display fascinating electronic, optoelectronic, and magnetic properties.
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Affiliation(s)
- Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mingzu Liu
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Kazunori Fujisawa
- Research Initiative for Supra-Materials, Shinshu University, Nagano, 380-8553, Japan
| | - Michael Lucking
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Kory Beach
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
- Lawrence Livermore National Laboratory, 7000 East Ave, Livermore, CA, 94550, USA
| | - Fu Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | | | | | - William Murray
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Yu Lei
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Shenzhen, 518055, China
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - David Sanchez
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Zhiwen Liu
- Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Ana Laura Elías
- Department of Physics, Binghamton University, Binghamton, NY, 13902, USA
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
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21
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan
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22
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Zhu B, Wu Y, Zhou Z, Zheng W, Hu Y, Ji Y, Kong L, Zhang R. Visualizing Large Facet-Dependent Electronic Tuning in Monolayer WSe 2 on Au Surfaces. NANO LETTERS 2022; 22:9630-9637. [PMID: 36383028 DOI: 10.1021/acs.nanolett.2c03785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have shown great importance in the development of novel ultrathin optoelectronic devices owing to their exceptional electronic and photonic properties. Effectively tuning their electronic band structures is not only desired in electronics applications but also can facilitate more novel properties. In this work, we demonstrate that large electronic tuning on a WSe2 monolayer can be realized by different facets of a Au-foil substrate, forming in-plane p-n junctions with remarkable built-in electric fields. This facet-dependent tuning effect is directly visualized by using scanning tunneling microscopy and differential conductance (dI/dV) spectroscopy. First-principles calculations reveal that the atomic arrangement of the Au facet effectively changes the interfacial coupling and charge transfer, leading to different magnitudes of charge doping in WSe2. Our study would be beneficial for future customized fabrication of TMD-junction devices via facet-specific construction on the substrate.
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Affiliation(s)
- Bo Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Yanwei Wu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, China
| | - Zeyi Zhou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Wenjie Zheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Yuchen Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Yongfei Ji
- School of Chemistry and Chemical Engineering, Guangzhou University, 510006 Guangzhou, China
| | - Lingyao Kong
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
| | - Rui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui 230601, China
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23
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Wang S, Liu X, Xu M, Liu L, Yang D, Zhou P. Two-dimensional devices and integration towards the silicon lines. NATURE MATERIALS 2022; 21:1225-1239. [PMID: 36284239 DOI: 10.1038/s41563-022-01383-2] [Citation(s) in RCA: 62] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Accepted: 09/14/2022] [Indexed: 06/16/2023]
Abstract
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
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Affiliation(s)
- Shuiyuan Wang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Xiaoxian Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Liwei Liu
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Peng Zhou
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China.
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
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24
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Pendurthi R, Jayachandran D, Kozhakhmetov A, Trainor N, Robinson JA, Redwing JM, Das S. Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202590. [PMID: 35843869 DOI: 10.1002/smll.202202590] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high-performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n-type TMDs such as MoS2 and WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics necessitates integration of large area p-type semiconductors. Furthermore, the physical separation of memory and logic is a bottleneck of the existing CMOS technology and must be overcome to reduce the energy burden for computation. In this article, the existing limitations are overcome and for the first time, a heterogeneous integration of large area grown n-type MoS2 and p-type vanadium doped WSe2 FETs with non-volatile and analog memory storage capabilities to achieve a non-von Neumann 2D CMOS platform is introduced. This manufacturing process flow allows for precise positioning of n-type and p-type FETs, which is critical for any IC development. Inverters and a simplified 2-input-1-output multiplexers and neuromorphic computing primitives such as Gaussian, sigmoid, and tanh activation functions using this non-von Neumann 2D CMOS platform are also demonstrated. This demonstration shows the feasibility of heterogeneous integration of wafer scale 2D materials.
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Affiliation(s)
- Rahul Pendurthi
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Darsith Jayachandran
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
| | - Azimkhan Kozhakhmetov
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
| | - Nicholas Trainor
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Joshua A Robinson
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Joan M Redwing
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Penn State University, University Park, PA, 16802, USA
- Materials Science and Engineering, Penn State University, University Park, PA, 16802, USA
- 2D Crystal Consortium - Materials Innovation Platform (2DCC-MIP) Materials Research Institute, Penn State University, University Park, PA, 16802, USA
- Electrical Engineering and Computer Science, Penn State University, University Park, PA, 16802, USA
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25
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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26
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Spin-Resolved Visible Optical Spectra and Electronic Characteristics of Defect-Mediated Hexagonal Boron Nitride Monolayer. CRYSTALS 2022. [DOI: 10.3390/cryst12070906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Defect-mediated hexagonal boron nitride (hBN) supercells display visible optical spectra and electronic characteristics. The defects in the hBN supercells included atomic vacancy, antisite, antisite vacancy, and the substitution of a foreign atom for boron or nitrogen. The hBN supercells with VB, CB, and NB-VN were characterized by a high electron density of states across the Fermi level, which indicated high conductive electronic characteristics. The hBNs with defects including atomic vacancy, antisite at atomic vacancy, and substitution of a foreign atom for boron or nitride exhibited distinct spin-resolved optical and electronic characteristics, while defects of boron and nitrogen antisite did not display the spin-resolved optical characteristics. The hBNs with positively charged defects exhibited dominant optical and electronic characteristics in the longer spectral region. Acknowledgment: This work at HU is supported by ARO W911NF-15-1-0535, NSF HRD-1137747, and NASA NNX15AQ03A.
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27
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Defect-gradient-induced Rashba effect in van der Waals PtSe 2 layers. Nat Commun 2022; 13:2759. [PMID: 35589733 PMCID: PMC9120180 DOI: 10.1038/s41467-022-30414-4] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 04/20/2022] [Indexed: 12/02/2022] Open
Abstract
Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications. Materials with strong Rashba-type spin-orbit coupling hold promise for spintronic applications and the investigation of topological phases of matter. Here, the authors report a method to generate layer-by-layer defect gradients in a van der Waals material, inducing broken spatial inversion symmetry and Rashba effect in the engineered layers.
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Villamayor MMS, Husain S, Oropesa-Nuñez R, Johansson FOL, Lindblad R, Lourenço P, Bernard R, Witkowski N, Prévot G, Sorgenfrei NLAN, Giangrisostomi E, Föhlisch A, Svedlindh P, Lindblad A, Nyberg T. Wafer-sized WS 2 monolayer deposition by sputtering. NANOSCALE 2022; 14:6331-6338. [PMID: 35297938 DOI: 10.1039/d1nr08375a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A1g-E2g and A1g-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WSx (x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.
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Affiliation(s)
- Michelle Marie S Villamayor
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden
| | - Sajid Husain
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Reinier Oropesa-Nuñez
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Fredrik O L Johansson
- Division of X-ray Photon Science, Department of Physics & Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden.
| | - Rebecka Lindblad
- Division of Inorganic Chemistry, Department of Chemistry-Ångström, Uppsala University, Box 521, SE-751 20 Uppsala, Sweden
| | - Pedro Lourenço
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Romain Bernard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Nadine Witkowski
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Geoffroy Prévot
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Nomi L A N Sorgenfrei
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24/25, 14476 Potsdam, Germany
| | - Erika Giangrisostomi
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
| | - Alexander Föhlisch
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24/25, 14476 Potsdam, Germany
| | - Peter Svedlindh
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Andreas Lindblad
- Division of X-ray Photon Science, Department of Physics & Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden.
| | - Tomas Nyberg
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden
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29
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Pan Y, Wang C, Fu Z, Wang GE, Xu G. Fluorescence sensing of nitrophenol explosives using a two-dimensional organic-metal chalcogenide fully covered with functional groups. Chem Commun (Camb) 2022; 58:4615-4618. [PMID: 35311844 DOI: 10.1039/d2cc00834c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A new 2D fluorescent organic-metal chalcogenide (OMC), CdClHT (HT = 4-hydroxythiophenol), evenly covered with phenol groups is reported. CdClHT represents unparalleled selectivity and the highest sensitivity towards 2,4,6-trinitrophenol (TNP) (KSV = 2.16 × 107 m-1, experimental LOD = 2 nM), among all reported 2D conjugated polymer (CP) luminescent detectors.
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Affiliation(s)
- Yu Pan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), No. 155 Yangqiao Road West, Fuzhou, Fujian, 350002, P. R. China. .,University of Chinese Academy of Sciences (UCAS), No. 19A Yuquan Road, Beijing 100049, P. R. China
| | - Chengpeng Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), No. 155 Yangqiao Road West, Fuzhou, Fujian, 350002, P. R. China.
| | - Zhihua Fu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), No. 155 Yangqiao Road West, Fuzhou, Fujian, 350002, P. R. China. .,University of Chinese Academy of Sciences (UCAS), No. 19A Yuquan Road, Beijing 100049, P. R. China
| | - Guang-E Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), No. 155 Yangqiao Road West, Fuzhou, Fujian, 350002, P. R. China. .,University of Chinese Academy of Sciences (UCAS), No. 19A Yuquan Road, Beijing 100049, P. R. China
| | - Gang Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS), No. 155 Yangqiao Road West, Fuzhou, Fujian, 350002, P. R. China. .,University of Chinese Academy of Sciences (UCAS), No. 19A Yuquan Road, Beijing 100049, P. R. China
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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31
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Wu X, Zhang C, Ge H, Liu H, Shang Z, Niu Y. Photoluminescence enhancement in monolayer MoS 2 and self-assembled 3D photonic crystal heterostructures. OPTICS LETTERS 2022; 47:1267-1270. [PMID: 35230344 DOI: 10.1364/ol.447379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Self-assembled photonic crystals (PCs) have promising applications in enhancing and directional manipulation of the photoemission due to their photonic bandgaps. Here, we employed self-assembled 3D polystyrene PCs to enhance the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2). Through tuning the photonic bandgap of the polystyrene crystals to overlap with the direct emission band of monolayer MoS2, the MoS2/3D-PC heterostructure showed a maximum 12-fold PL enhancement, and Rabi splitting was also observed in the reflection spectrum. The heterostructure is expected to be useful in nanophotonic emitting devices.
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32
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Liu GN, Xu RD, Li MK, Sun Y, Zhou MJ, Cai RY, You ZJ, Jiang XM, Li C. Ultrathin covalent and cuprophilic interaction-assembled copper-sulfur monolayer in organic metal chalcogenide for oriented photoconductivity. Chem Commun (Camb) 2022; 58:2858-2861. [PMID: 35129567 DOI: 10.1039/d2cc00145d] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report the thinnest copper sulfur atomic monolayer in an organic copper chalcogenide [Cu(CMP)]n (CMP = 5-chloro-2-mercaptopyridine). The layer features a new type of copper sulfur structure woven by both covalent bond and cuprophilic interaction and shows an intriguing oriented photoconductivity.
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Affiliation(s)
- Guang-Ning Liu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Rang-Dong Xu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Ming-Kun Li
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Yiqiang Sun
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Meng-Jie Zhou
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Rui-Yun Cai
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Zuo-Jiang You
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
| | - Xiao-Ming Jiang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Cuncheng Li
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan, Shandong 250022, P. R. China.
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33
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Kim T, Park H, Park BH, Joon Yoon S, Liu C, Joo SW, Son N, Kang M. Long-term catalytic durability in Z-scheme CdS@ 1T-WS2 heterojunction materials. J IND ENG CHEM 2022. [DOI: 10.1016/j.jiec.2021.09.035] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
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34
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Yang H, Wang Y, Zou X, Bai R, Wu Z, Han S, Chen T, Hu S, Zhu H, Chen L, Zhang DW, Lee JC, Lu X, Zhou P, Sun Q, Yu ET, Akinwande D, Ji L. Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9862483. [PMID: 34957405 PMCID: PMC8672204 DOI: 10.34133/2021/9862483] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Accepted: 11/09/2021] [Indexed: 11/24/2022]
Abstract
Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS2 films and in situ Nb-doped p-type WS2 films were synthesized through atomic layer deposition (ALD) on 8-inch α-Al2O3/Si wafers, 2-inch sapphire, and 1 cm2 GaN substrate pieces. The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing. WS2 n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes. X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements confirmed the effective substitutional doping with Nb. The on/off ratio and electron mobility of WS2 n-FET are as high as 105 and 6.85 cm2 V−1 s−1, respectively. In WS2 p-FET with 15-cycle Nb doping, the on/off ratio and hole mobility are 10 and 0.016 cm2 V−1 s−1, respectively. The p-n structure based on n- and p- type WS2 films was proved with a 104 rectifying ratio. The realization of controllable in situ Nb-doped WS2 films paved a way for fabricating wafer-scale complementary WS2 FETs.
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Affiliation(s)
- Hanjie Yang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yang Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Rongxu Bai
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zecheng Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Sheng Han
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Tao Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jack C Lee
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qingqing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Edward T Yu
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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Cochrane KA, Lee JH, Kastl C, Haber JB, Zhang T, Kozhakhmetov A, Robinson JA, Terrones M, Repp J, Neaton JB, Weber-Bargioni A, Schuler B. Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS 2. Nat Commun 2021; 12:7287. [PMID: 34911952 PMCID: PMC8674275 DOI: 10.1038/s41467-021-27585-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 11/22/2021] [Indexed: 11/29/2022] Open
Abstract
Atomic spin centers in 2D materials are a highly anticipated building block for quantum technologies. Here, we demonstrate the creation of an effective spin-1/2 system via the atomically controlled generation of magnetic carbon radical ions (CRIs) in synthetic two-dimensional transition metal dichalcogenides. Hydrogenated carbon impurities located at chalcogen sites introduced by chemical doping are activated with atomic precision by hydrogen depassivation using a scanning probe tip. In its anionic state, the carbon impurity is computed to have a magnetic moment of 1 μB resulting from an unpaired electron populating a spin-polarized in-gap orbital. We show that the CRI defect states couple to a small number of local vibrational modes. The vibronic coupling strength critically depends on the spin state and differs for monolayer and bilayer WS2. The carbon radical ion is a surface-bound atomic defect that can be selectively introduced, features a well-understood vibronic spectrum, and is charge state controlled. Spin-polarized defects in 2D materials are attracting attention for future quantum technology applications, but their controlled fabrication is still challenging. Here, the authors report the creation and characterization of effective spin 1/2 defects via the atomically-precise generation of magnetic carbon radical ions in 2D WS2.
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Affiliation(s)
- Katherine A Cochrane
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jun-Ho Lee
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.,Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Christoph Kastl
- Walter-Schottky-Institut and Physik-Department, Technical University of Munich, Garching, 85748, Germany
| | - Jonah B Haber
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.,Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA
| | - Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA.,Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Azimkhan Kozhakhmetov
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA.,Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA.,Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA.,Department of Physics and Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Jascha Repp
- Institute of Experimental and Applied Physics, University of Regensburg, Regensburg, 93040, Germany
| | - Jeffrey B Neaton
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. .,Department of Physics, University of California at Berkeley, Berkeley, CA, 94720, USA. .,Kavli Energy Nanosciences Institute at Berkeley, Berkeley, CA, 94720, USA.
| | | | - Bruno Schuler
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. .,nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland.
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Fabrication of ultrafine powder using processing control agent, and investigation of its effect on microstructure and thermoelectric properties of p-type (Bi, Sb)2Te3 alloys. ADV POWDER TECHNOL 2021. [DOI: 10.1016/j.apt.2021.12.005] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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37
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Pelaez-Fernandez M, Lin YC, Suenaga K, Arenal R. Optoelectronic Properties of Atomically Thin Mo xW (1-x)S 2 Nanoflakes Probed by Spatially-Resolved Monochromated EELS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3218. [PMID: 34947566 PMCID: PMC8708971 DOI: 10.3390/nano11123218] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2021] [Revised: 11/10/2021] [Accepted: 11/16/2021] [Indexed: 11/17/2022]
Abstract
Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.
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Affiliation(s)
- Mario Pelaez-Fernandez
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan;
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research (ISIR-SANKEN), Osaka University, Osaka 567-0047, Japan;
| | - Raul Arenal
- Instituto de Nanociencia y Materiales de Aragon (INMA), CSIC-U. de Zaragoza, Calle Pedro Cerbuna 12, 50009 Zaragoza, Spain;
- Laboratorio de Microscopias Avanzadas, Universidad de Zaragoza, Calle Mariano Esquillor, 50018 Zaragoza, Spain
- ARAID Fundation, 50018 Zaragoza, Spain
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38
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Bano K, Kaushal S, Singh PP. A review on photocatalytic degradation of hazardous pesticides using heterojunctions. Polyhedron 2021. [DOI: 10.1016/j.poly.2021.115465] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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39
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Zhong F, Ye J, He T, Zhang L, Wang Z, Li Q, Han B, Wang P, Wu P, Yu Y, Guo J, Zhang Z, Peng M, Xu T, Ge X, Wang Y, Wang H, Zubair M, Zhou X, Gao P, Fan Z, Hu W. Substitutionally Doped MoSe 2 for High-Performance Electronics and Optoelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102855. [PMID: 34647416 DOI: 10.1002/smll.202102855] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.
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Affiliation(s)
- Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Zubair
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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40
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Lan J, Luo M, Han J, Peng M, Duan H, Tan Y. Nanoporous B 13 C 2 towards Highly Efficient Electrochemical Nitrogen Fixation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102814. [PMID: 34423528 DOI: 10.1002/smll.202102814] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2021] [Revised: 06/24/2021] [Indexed: 06/13/2023]
Abstract
The electrochemical nitrogen fixation under mild conditions is a promising alternative to the current nitrogen industry with high energy consumption and greenhouse gas emission. Here, a nanoporous boron carbide (np-B13 C2 ) catalyst is reported for electrochemical nitrogen fixation, which is fabricated by the combination of metallurgical alloy design and chemical etching. The resulting np-B13 C2 exhibits versatile catalytic activities towards N2 reduction reactions (NRR) and N2 oxidation reaction (NOR). A high NH3 yield of 91.28 µg h-1 mgcat.-1 and Faradaic efficiency (FE) of 35.53% at -0.05 V versus the reversible hydrogen electrode are obtained for NRR, as well as long-term stability of up to 70 h, making them among the most active NRR electrocatalysts. This catalyst can also achieve a NO3- yield of 165.8 µg h-1 mgcat.-1 and a FE of 8.4% for NOR. In situ Raman spectroscopy and density functional theory calculations reveal that strong coupling between the BC sites modulates the electronic structures of adjacent B atoms of B13 C2 , which enables the B sites to effectively adsorb and activate chemical inert N2 molecules, resulting in lowered energy required by the potential-determining step. Besides, the introduction of carbon can increase the inherent conductivity and reduce the binding energy of the reactants, thus improving N2 fixation performance.
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Affiliation(s)
- Jiao Lan
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan, 410082, China
| | - Min Luo
- Department of Physics, Shanghai Polytechnic University, Shanghai, 201209, China
| | - Jiuhui Han
- Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Ming Peng
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan, 410082, China
| | - Huigao Duan
- College of Mechanical and Vehicle Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Yongwen Tan
- College of Materials Science and Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, Hunan, 410082, China
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41
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Seo SY, Yang DH, Moon G, Okello OFN, Park MY, Lee SH, Choi SY, Jo MH. Identification of Point Defects in Atomically Thin Transition-Metal Dichalcogenide Semiconductors as Active Dopants. NANO LETTERS 2021; 21:3341-3354. [PMID: 33825482 DOI: 10.1021/acs.nanolett.0c05135] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Selective doping in semiconductors is essential not only for monolithic integrated circuity fabrications but also for tailoring their properties including electronic, optical, and catalytic activities. Such active dopants are essentially point defects in the host lattice. In atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDCs), the roles of such point defects are particularly critical in addition to their large surface-to-volume ratio, because their bond dissociation energy is relatively weaker, compared to elemental semiconductors. In this Mini Review, we review recent advances in the identifications of diverse point defects in 2D TMDC semiconductors, as active dopants, toward the tunable doping processes, along with the doping methods and mechanisms in literature. In particular, we discuss key issues in identifying such dopants both at the atomic scales and the device scales with selective examples. Fundamental understanding of these point defects can hold promise for tunability doping of atomically thin 2D semiconductor platforms.
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42
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Sun Y, Terrones M, Schaak RE. Colloidal Nanostructures of Transition-Metal Dichalcogenides. Acc Chem Res 2021; 54:1517-1527. [PMID: 33662209 DOI: 10.1021/acs.accounts.1c00006] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
ConspectusLayered transition-metal dichalcogenides (TMDs) are intriguing two-dimensional (2D) compounds where metal and chalcogen atoms are covalently bonded in each monolayer, and the monolayers are held together by weak van der Waals forces. Distinct from graphene, which is chemically inert, layered TMDs exhibit a wide range of electronic, optical, catalytic, and magnetic properties dependent upon their compositions, crystal structures, and thicknesses, which make them fundamentally and technologically important. TMD nanostructures are traditionally synthesized using gas-phase chemical deposition methods, which are typically limited to small-scale samples of substrate-bound planar materials. Colloidal synthesis has emerged as an alternative synthesis approach to enable the scalable synthesis of free-standing TMDs. The judicious selection of precursors, solvents, and capping ligands together with the optimization of synthesis parameters such as concentrations and temperatures leads to the fabrication of colloidal TMD nanostructures exhibiting tunable properties. In addition, understanding the formation and transformation of TMD nanostructures in solution contributes to the discovery of important structure-function relationships, which may be extendable to other anisotropic systems.In this Account, we summarize recent progress in the colloidal synthesis, characterization, and applications of TMD nanostructures with tunable compositions, structures, and thicknesses. On the basis of the preparation of Mo- and W-based disulfide, diselenide, and ditelluride nanostructures, we discuss examples of phase engineering where various metastable TMD compounds can be directly accessed at low temperatures in solution. We also analyze the chemistry involved in broadly tuning the composition across the MoSe2-WSe2, WS2-WSe2, and MoTe2-WTe2 solid solutions as well as atomic-level microscopic characterization and the resulting composition-tunable properties. We then highlight how the high densities of defects in the colloidally synthesized TMD nanostructures enable unique catalytic properties, including their ability to facilitate the selective hydrogenation of substituted nitroarenes using molecular hydrogen. Finally, using this library of colloidal TMD nanostructures as substrates, we discuss the pathways by which noble metals deposit onto them in solution. We highlight the importance of the relative strengths of the interfacial metal-chalcogen bonds in determining the sizes and morphologies of the deposited noble metal components. These synthesis capabilities for colloidal TMD nanostructures, which have been generalized to a library of composition-tunable phases, enable new systematic studies of structure-property relationships and chemical reactivity in this important class of 2D materials.
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43
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Gao C, Yang X, Jiang M, Chen L, Chen Z, Singh CV. Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide. Phys Chem Chem Phys 2021; 23:6298-6308. [PMID: 33688866 DOI: 10.1039/d0cp06336c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) are the potential candidate materials in nanoelectronic and optoelectronic applications due to their unique physical and chemical properties. Although both defect and strain greatly alter the structural, physical and chemical properties of monolayer TMDs, the defective monolayer TMDs under applied strain have not been adequately studied. In this paper, the synergistic effects of sulfur vacancy defects and mechanical strain on the mechanical, electronic and optical properties of monolayer tungsten disulfide (WS2) have been systematically studied using first principles density functional theory. The results indicate that the sulfur vacancy formation energy increases linearly with increasing sulfur vacancy concentration under different strains. The strain energy and stress of monolayer WS2 with different sulfur vacancy concentrations increase with increasing applied strain in the strain range of -10% to 10%. The band gap of monolayer WS2 decreases with increasing sulfur vacancy concentration under different strains. Moreover, compared with unstrained conditions, 5% compressive strain increases the band gap at a larger vacancy concentration and the case is just opposite at a smaller vacancy concentration, while 5% tensile strain decreases the band gap. The band gap of monolayer WS2 with different sulfur vacancy concentrations firstly increases and then shrinks with increasing applied strain under compressive strain, whereas it decreases monotonically under tensile strain in the strain range of -10% to 10%. In the visible-light wavelength region, the out-of-plane absorption coefficient under different strains increases with increasing sulfur vacancy concentration. Furthermore, 5% compressive strain enhances the absorption coefficient and 5% tensile strain decreases the absorption coefficient. Hence, the synergistic effects of sulfur vacancy defects and mechanical strain in monolayer TMDs can open new avenues for their applications in nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Chan Gao
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada. and Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China
| | - Xiaoyong Yang
- Condensed Matter Theory Group, Materials Theory Division, Department of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden
| | - Ming Jiang
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Lixin Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada.
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto, Toronto, ON M5S 3E4, Canada. and Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON M5S 3G8, Canada
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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45
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Lee J, Heo J, Lim HY, Seo J, Kim Y, Kim J, Kim U, Choi Y, Kim SH, Yoon YJ, Shin TJ, Kang J, Kwak SK, Kim JY, Park H. Defect-Induced in Situ Atomic Doping in Transition Metal Dichalcogenides via Liquid-Phase Synthesis toward Efficient Electrochemical Activity. ACS NANO 2020; 14:17114-17124. [PMID: 33284600 DOI: 10.1021/acsnano.0c06783] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Transition metal dichalcogenides (TMDs), due to their fascinating properties, have emerged as potential next-generation semiconducting nanomaterials across diverse fields of applications. When combined with other material systems, precise control of the intrinsic properties of the TMDs plays a vital role in maximizing their performance. Defect-induced atomic doping through introduction of a chalcogen vacancy into the TMDs lattices is known to be a promising strategy for modulating their characteristic properties. As a result, there is a need to develop tunable and scalable synthesis routes to achieve vacancy-modulated TMDs. Herein, we propose a facile liquid-phase ligand exchange approach for scalable, uniform, and vacancy-tunable synthesis of TMDs films. Varying the relative molar ratio of the chalcogen to transition metal precursors enabled the in situ modulation of the chalcogen vacancy concentrations without necessitating additional post-treatments. When employed as the electrocatalyst in the hydrogen evolution reaction (HER), the vacancy-modulated TMDs, exhibiting a synergetic effect on the energy level matching to the reduction potential of water and optimized free energy differences in the HER pathways, showed a significant enhancement in the hydrogen production via the improved charge transfer kinetics and increased active sites. The proposed approach for synthesizing tunable vacancy-modulated TMDs with wafer-scale synthesis capability is, therefore, promising for better practical applications of TMDs.
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Affiliation(s)
- Junghyun Lee
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jungwoo Heo
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyeong Yong Lim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jihyung Seo
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Youngwoo Kim
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ungsoo Kim
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Yunseong Choi
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Su Hwan Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Yung Jin Yoon
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Tae Joo Shin
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sang Kyu Kwak
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jin Young Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyesung Park
- Department of Materials Science and Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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46
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Zhang F, Zheng B, Sebastian A, Olson DH, Liu M, Fujisawa K, Pham YTH, Jimenez VO, Kalappattil V, Miao L, Zhang T, Pendurthi R, Lei Y, Elías AL, Wang Y, Alem N, Hopkins PE, Das S, Crespi VH, Phan M, Terrones M. Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001174. [PMID: 33344114 PMCID: PMC7740087 DOI: 10.1002/advs.202001174] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2020] [Revised: 08/09/2020] [Indexed: 05/22/2023]
Abstract
Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first-principles calculations. Room-temperature 2D-DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.
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Affiliation(s)
- Fu Zhang
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Boyang Zheng
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Amritanand Sebastian
- Department of Engineering Science and MechanicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - David H. Olson
- Department of Mechanical and Aerospace EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
| | - Mingzu Liu
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Kazunori Fujisawa
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Research Initiative for Supra‐MaterialsShinshu University4‐17‐1 WakasatoNagano380‐8553Japan
| | | | | | | | - Leixin Miao
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Tianyi Zhang
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Rahul Pendurthi
- Department of Engineering Science and MechanicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Yu Lei
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Ana Laura Elías
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsApplied Physics and AstronomyBinghamton UniversityBinghamtonNY13902USA
| | - Yuanxi Wang
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- 2D Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Nasim Alem
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Patrick E. Hopkins
- Department of Mechanical and Aerospace EngineeringUniversity of VirginiaCharlottesvilleVA22904USA
| | - Saptarshi Das
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of Engineering Science and MechanicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Vincent H. Crespi
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- 2D Crystal ConsortiumThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Manh‐Huong Phan
- Department of PhysicsUniversity of South FloridaTampaFL33620USA
| | - Mauricio Terrones
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Center for 2‐ Dimensional and Layered MaterialsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of PhysicsThe Pennsylvania State UniversityUniversity ParkPA16802USA
- Department of ChemistryThe Pennsylvania State UniversityUniversity ParkPA16802USA
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47
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Kozhakhmetov A, Schuler B, Tan AMZ, Cochrane KA, Nasr JR, El-Sherif H, Bansal A, Vera A, Bojan V, Redwing JM, Bassim N, Das S, Hennig RG, Weber-Bargioni A, Robinson JA. Scalable Substitutional Re-Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2005159. [PMID: 33169451 DOI: 10.1002/adma.202005159] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2020] [Revised: 10/12/2020] [Indexed: 06/11/2023]
Abstract
Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next-generation electronic, logic-memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe2 films with Re atoms via metal-organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe2 is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n-type behavior of WSe2 . Transport characteristics of fabricated back-gated field-effect-transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant-level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.
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Affiliation(s)
- Azimkhan Kozhakhmetov
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Bruno Schuler
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- nanotech@surfaces Laboratory, Empa-Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Anne Marie Z Tan
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Katherine A Cochrane
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joseph R Nasr
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Hesham El-Sherif
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L8, Canada
| | - Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Alex Vera
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Vincent Bojan
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Nabil Bassim
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON, L8S 4L8, Canada
| | - Saptarshi Das
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA, 16802, USA
- Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Richard G Hennig
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | | | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, PA, 16802, USA
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
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48
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Kim J, Lee E, Mehta G, Choi W. Stable and high-performance piezoelectric sensor via CVD grown WS 2. NANOTECHNOLOGY 2020; 31:445203. [PMID: 32668423 DOI: 10.1088/1361-6528/aba659] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Piezoelectric materials are widely used as electromechanical couples for a variety of sensors and actuators in nanoscale electronic devices. The majority of piezoelectric devices display lateral patterning of counter electrodes beside active materials such as two-dimensional transition metal dichalcogenides (2D TMDs). As a result, their piezoelectric output response is strongly dependent on the lattice orientation of the 2D TMD crystal structure, limiting their piezoelectric properties. To overcome this issue, we fabricated a vertical sandwich design of a piezoelectric sensor with a conformal contact to enhance the overall piezoelectric performance. In addition, we enhanced the piezoelectric properties of 2D WS2 by carrying out a unique solvent-vapor annealing process to produce a sulfur-deficient WS2(1-x) structure that yielded a 3-fold higher piezoelectric response voltage (96.74 mV) than did pristine WS2 to a 3 kPa compression. Our device was also found to be stable: it retained its piezoelectric performance even after a month in an ambient atmospheric condition. Our study has revealed a facile methodology for fabricating large-scale piezoelectric devices using an asymmetrically engineered 2D WS2 structure.
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Affiliation(s)
- Junyoung Kim
- Department of Materials Science and Engineering, University of North Texas, Denton, TX 76207, United States of America
| | - Eunho Lee
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX 76207, United States of America
| | - Gayatri Mehta
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, United States of America
| | - Wonbong Choi
- Department of Materials Science and Engineering, University of North Texas, Denton, TX 76207, United States of America
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, TX 76207, United States of America
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49
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Arnold AJ, Schulman DS, Das S. Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors. ACS NANO 2020; 14:13557-13568. [PMID: 33026795 DOI: 10.1021/acsnano.0c05572] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One of the main limiting factors in the performance of devices based on two-dimensional (2D) materials is Fermi level pinning at the contacts, which creates Schottky barriers (SBs) that increase contact resistance and, for most transition metal dichalcogenides (TMDs), limit hole conduction. A promising method to mitigate these problems is surface charge transfer doping (SCTD), which places fixed charge at the surface of the material and thins the SBs by locally shifting the energy bands. We use a mild O2 plasma to convert the top few layers of a given TMD into a substoichiometric oxide that serves as a p-type SCTD layer. A comprehensive experimental study, backed by TCAD simulations, involving MoS2, MoSe2, MoTe2, WS2, and WSe2 flakes of various thicknesses exposed to different plasma times is used to investigate the underlying mechanisms responsible for SCTD. The surface charge at the top of the channel and the gate-modulated surface potential at the bottom are found to have competing effects on the channel potential, which results in a decrease in the doping-induced threshold shift and an increase in minimum OFF state current with increasing thickness. Additionally, an undoped channel region is shown to mitigate carrier injection issues in sufficiently thin flakes. Notably, the band movements underlying the SCTD effects are independent of the particular semiconductor material, SCTD strategy, and doping polarity. Consequently, our findings provide critical insights for the design of high-performance transistors for a wide range of materials and SCTD mechanisms including TMD devices with strong hole conduction.
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Affiliation(s)
- Andrew J Arnold
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Daniel S Schulman
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
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50
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Vandalon V, Verheijen MA, Kessels WMM, Bol AA. Atomic Layer Deposition of Al-Doped MoS 2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density. ACS APPLIED NANO MATERIALS 2020; 3:10200-10208. [PMID: 33134882 PMCID: PMC7590523 DOI: 10.1021/acsanm.0c02167] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Accepted: 09/23/2020] [Indexed: 05/29/2023]
Abstract
Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS2 via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p-type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (1017 up to 1021 cm-3) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS2 ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.
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Affiliation(s)
- Vincent Vandalon
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
| | - Marcel A. Verheijen
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
- Eurofins
Material Science Netherlands BV, 5656AE Eindhoven, The Netherlands
| | | | - Ageeth A. Bol
- Applied
Physics, Eindhoven University of Technology, 5600MB Eindhoven, The Netherlands
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