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Abdullah M, Younis M, Sohail MT, Wu S, Zhang X, Khan K, Asif M, Yan P. Recent Progress of 2D Materials-Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402668. [PMID: 39235584 DOI: 10.1002/smll.202402668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Revised: 08/06/2024] [Indexed: 09/06/2024]
Abstract
Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.
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Affiliation(s)
- Muhammad Abdullah
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Younis
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Tahir Sohail
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Shifang Wu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiong Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Karim Khan
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Asif
- THz Technical Research Center of Shenzhen University, Shenzhen Key Laboratory of Micro-nano Photonic Information Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Peiguang Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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Tang H, Wang Y, Ni X, Watanabe K, Taniguchi T, Jarillo-Herrero P, Fan S, Mazur E, Yacoby A, Cao Y. On-chip multi-degree-of-freedom control of two-dimensional materials. Nature 2024; 632:1038-1044. [PMID: 39169189 DOI: 10.1038/s41586-024-07826-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Accepted: 07/12/2024] [Indexed: 08/23/2024]
Abstract
Two-dimensional materials (2DM) and their heterostructures offer tunable electrical and optical properties, primarily modifiable through electrostatic gating and twisting. Although electrostatic gating is a well-established method for manipulating 2DM, achieving real-time control over interfacial properties remains challenging in exploring 2DM physics and advanced quantum device technology1-6. Current methods, often reliant on scanning microscopes, are limited in their scope of application, lacking the accessibility and scalability of electrostatic gating at the device level. Here we introduce an on-chip platform for 2DM with in situ adjustable interfacial properties, using a microelectromechanical system (MEMS). This platform comprises compact and cost-effective devices with the ability of precise voltage-controlled manipulation of 2DM, including approaching, twisting and pressurizing actions. We demonstrate this technology by creating synthetic topological singularities, such as merons, in the nonlinear optical susceptibility of twisted hexagonal boron nitride (h-BN)7-10. A key application of this technology is the development of integrated light sources with real-time and wide-range tunable polarization. Furthermore, we predict a quantum analogue that can generate entangled photon pairs with adjustable entanglement properties. Our work extends the abilities of existing technologies in manipulating low-dimensional quantum materials and paves the way for new hybrid two- and three-dimensional devices, with promising implications in condensed-matter physics, quantum optics and related fields.
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Affiliation(s)
- Haoning Tang
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Yiting Wang
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Xueqi Ni
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | | | - Shanhui Fan
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Eric Mazur
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
| | - Amir Yacoby
- Department of Physics, Faculty of Art and Sciences, Harvard University, Cambridge, MA, USA.
| | - Yuan Cao
- Department of Physics, Faculty of Art and Sciences, Harvard University, Cambridge, MA, USA.
- Society of Fellows, Harvard University, Cambridge, MA, USA.
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, USA.
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Ko H, Choi SH, Park Y, Lee S, Oh CS, Kim SY, Lee YH, Kim SM, Ding F, Kim KK. Atomic sawtooth-like metal films for vdW-layered single-crystal growth. Nat Commun 2024; 15:5848. [PMID: 38992071 PMCID: PMC11239812 DOI: 10.1038/s41467-024-50184-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Accepted: 06/28/2024] [Indexed: 07/13/2024] Open
Abstract
Atomic sawtooth surfaces have emerged as a versatile platform for growth of single-crystal van der Waals layered materials. However, the mechanism governing the formation of single-crystal atomic sawtooth metal (copper or gold) films on hard substrates (tungsten or molybdenum) remains a puzzle. In this study, we aim to elucidate the formation mechanism of atomic sawtooth metal films during melting-solidification process. Utilizing molecular dynamics, we unveil that the solidification of the liquid copper initiates at a high-index tungsten facet with higher interfacial energy. Subsequent tungsten facets follow energetically favourable pathways of forming single-crystal atomic sawtooth copper film during the solidification process near melting temperature. Formation of atomic sawtooth copper film is guaranteed with a film thickness exceeding the grain size of polycrystalline tungsten substrate. We further demonstrate the successful growth of centimeter-scale single-crystal monolayer hexagonal boron nitride films on atomic sawtooth copper films and explore their potential as efficient oxygen barrier.
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Affiliation(s)
- Hayoung Ko
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Soo Ho Choi
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Yunjae Park
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Seungjin Lee
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Chang Seok Oh
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Sung Youb Kim
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
- Department of Mechanical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul, 14072, South Korea.
| | - Feng Ding
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea.
- Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, China.
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, South Korea.
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4
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Paul N, Crowley PJD, Fu L. Directional Localization from a Magnetic Field in Moiré Systems. PHYSICAL REVIEW LETTERS 2024; 132:246402. [PMID: 38949360 DOI: 10.1103/physrevlett.132.246402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 04/05/2024] [Accepted: 05/14/2024] [Indexed: 07/02/2024]
Abstract
Moiré materials provide a highly tunable platform in which novel electronic phenomena can emerge. We study strained moiré materials in a uniform magnetic field and predict highly anisotropic electrical conductivity that switches easy axis as magnetic field or strain is varied. The dramatic anisotropy reflects one-dimensional localization (directional localization) of the electron wave functions along a crystal axis due to quantum interference effects. This can be understood in an effective one-dimensional quasiperiodic Aubry-André-Harper-like model, or in a complementary semiclassical picture. This phenomenon should be observable in strained moiré materials at realistic fields and low strain disorder, as well as unstrained systems with anisotropic Fermi surfaces.
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Wei B, Ying H, Chen J, Zang Q, Dong J, Zhang H, Liu Y, Liu C. A Tunable Graphene Superlattice with Deformable Periodical Nano-Gating. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1019. [PMID: 38921895 PMCID: PMC11206335 DOI: 10.3390/nano14121019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2024] [Revised: 06/03/2024] [Accepted: 06/11/2024] [Indexed: 06/27/2024]
Abstract
Graphene superlattices have simple and controllable electronic band structures, which can also be electrostatically tuned. They have been widely studied for band engineering and strong correlated physics, and have led to the discovery of a variety of exciting phenomena. To experimentally study the physics of graphene superlattices in a systematic way, it is desirable to control the structure parameters, which barely exist at the moment, onsite. Here, a tunable superlattice with graphene and a deformable gating structure is demonstrated. The period and duty cycle of the nano-gating, and furthermore of the superlattice potential, can be tuned through altering the shape of the gating structure with piezo-actuators, offering a tunable band structure. The tuning of the electronic band structures of both a two-dimensional and a one-dimensional superlattice is demonstrated with numerical simulations, offering a new approach for tunable electronic and photonic devices.
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Affiliation(s)
- Binbin Wei
- Institute of System Engineering, Beijing 100091, China; (Q.Z.); (C.L.)
| | - Haosong Ying
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China (J.D.); (H.Z.)
| | - Junrong Chen
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China (J.D.); (H.Z.)
| | - Qing Zang
- Institute of System Engineering, Beijing 100091, China; (Q.Z.); (C.L.)
| | - Jiduo Dong
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China (J.D.); (H.Z.)
| | - Hao Zhang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China (J.D.); (H.Z.)
| | - Yang Liu
- Institute of System Engineering, Beijing 100091, China; (Q.Z.); (C.L.)
| | - Chunheng Liu
- Institute of System Engineering, Beijing 100091, China; (Q.Z.); (C.L.)
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Ke Y, Wan L, Qin X, Hu W, Yang J. Proposed Quantum Twisting Scanning Probe Microscope over Twisted Bilayer Graphene. NANO LETTERS 2024; 24:4433-4438. [PMID: 38564276 DOI: 10.1021/acs.nanolett.4c00205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Twisted bilayer graphene (TBG) has the natural merits of tunable flat bands and localized states distributed as a triangular lattice. However, the application of this state remains obscure. By density functional theory (DFT) and pz orbital tight-binding model calculations, we investigate the tip-shaped electrostatic potential of top valence electrons of TBG at half filling. Adsorption energy scanning of molecules above the TBG reveals that this tip efficiently attracts molecules selectively to AA-stacked or AB-stacked regions. Tip shapes can be controlled by their underlying electronic structure, with electrons of low bandwidth exhibiting a more localized feature. Our results indicate that TBG tips offer applications in noninvasive and nonpolluting measurements in scanning probe microscopy and theoretical guidance for 2D material-based probes.
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Affiliation(s)
- Yifan Ke
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lingyun Wan
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xinming Qin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Hu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
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7
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Chen S, Chen G, Zhao Y, Bu S, Hu Z, Mao B, Wu H, Liao J, Li F, Zhou C, Guo B, Liu W, Zhu Y, Lu Q, Hu J, Shang M, Shi Z, Yu B, Zhang X, Zhao Z, Jia K, Zhang Y, Sun P, Liu Z, Lin L, Wang X. Tunable Adhesion for All-Dry Transfer of 2D Materials Enabled by the Freezing of Transfer Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308950. [PMID: 38288661 DOI: 10.1002/adma.202308950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 12/30/2023] [Indexed: 02/09/2024]
Abstract
The real applications of chemical vapor deposition (CVD)-grown graphene films require the reliable techniques for transferring graphene from growth substrates onto application-specific substrates. The transfer approaches that avoid the use of organic solvents, etchants, and strong bases are compatible with industrial batch processing, in which graphene transfer should be conducted by dry exfoliation and lamination. However, all-dry transfer of graphene remains unachievable owing to the difficulty in precisely controlling interfacial adhesion to enable the crack- and contamination-free transfer. Herein, through controllable crosslinking of transfer medium polymer, the adhesion is successfully tuned between the polymer and graphene for all-dry transfer of graphene wafers. Stronger adhesion enables crack-free peeling of the graphene from growth substrates, while reduced adhesion facilitates the exfoliation of polymer from graphene surface leaving an ultraclean surface. This work provides an industrially compatible approach for transferring 2D materials, key for their future applications, and offers a route for tuning the interfacial adhesion that would allow for the transfer-enabled fabrication of van der Waals heterostructures.
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Affiliation(s)
- Sensheng Chen
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ge Chen
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yixuan Zhao
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Junhao Liao
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Bingbing Guo
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wenlin Liu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yaqi Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Qi Lu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Mingpeng Shang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Zhuofeng Shi
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Beiming Yu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xiaodong Zhang
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Zhenxin Zhao
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, P. R. China
| | - Zhongfan Liu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Xiaomin Wang
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
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Zhou W, Ding J, Hua J, Zhang L, Watanabe K, Taniguchi T, Zhu W, Xu S. Layer-polarized ferromagnetism in rhombohedral multilayer graphene. Nat Commun 2024; 15:2597. [PMID: 38519502 PMCID: PMC10960043 DOI: 10.1038/s41467-024-46913-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Accepted: 03/14/2024] [Indexed: 03/25/2024] Open
Abstract
Flat-band systems with strongly correlated electrons can exhibit a variety of phenomena, such as correlated insulating and topological states, unconventional superconductivity, and ferromagnetism. Rhombohedral multilayer graphene has recently emerged as a promising platform for investigating exotic quantum states due to its hosting of topologically protected surface flat bands at low energy, which have a layer-dependent energy dispersion. However, the complex relationship between the surface flat bands and the highly dispersive high-energy bands makes it difficult to study correlated surface states. In this study, we introduce moiré superlattices as a method to isolate the surface flat bands of rhombohedral multilayer graphene. The observed pronounced screening effects in the moiré potential-modulated rhombohedral multilayer graphene indicate that the two surface states are electronically decoupled. The flat bands that are isolated promote correlated surface states in areas that are distant from the charge neutrality points. Notably, we observe tunable layer-polarized ferromagnetism, which is evidenced by a hysteretic anomalous Hall effect. This is achieved by polarizing the surface states with finite displacement fields.
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Affiliation(s)
- Wenqiang Zhou
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
| | - Jing Ding
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
| | - Jiannan Hua
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
| | - Le Zhang
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Wei Zhu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
| | - Shuigang Xu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
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9
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Jat MK, Tiwari P, Bajaj R, Shitut I, Mandal S, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Bid A. Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice. Nat Commun 2024; 15:2335. [PMID: 38485946 PMCID: PMC10940307 DOI: 10.1038/s41467-024-46672-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 02/27/2024] [Indexed: 03/18/2024] Open
Abstract
This paper presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. Using two interfering moiré potentials, we generate a supermoiré pattern that renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we use electronic transport measurements to identify the position of these gaps as a function of the carrier density. We establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained using the continuum model. Our study provides strong evidence of the quantization of the momentum-space area of quasi-Brillouin zones in a minimally incommensurate lattice. It fills important gaps in the understanding of band structure engineering of Dirac fermions with a doubly periodic superlattice spinor potential.
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Affiliation(s)
- Mohit Kumar Jat
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Priya Tiwari
- Braun Center for Submicron Research, Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Robin Bajaj
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Ishita Shitut
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Shinjan Mandal
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
| | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
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10
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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11
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Jat MK, Mishra S, Mann HK, Bajaj R, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Bid A. Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice. NANO LETTERS 2024; 24:2203-2209. [PMID: 38345527 DOI: 10.1021/acs.nanolett.3c04223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
We present experimental findings on electron-electron scattering in two-dimensional moiré heterostructures with a tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around the half-full point, the primary contribution to the resistance of these devices arises from Umklapp electron-electron (Uee) scattering, making the resistance of graphene/hBN moiré devices significantly larger than that of non-aligned devices (where Uee is forbidden). We find that the strength of Uee scattering follows a universal scaling with Fermi energy and is nonmonotonically dependent on the superlattice period. The Uee scattering can be tuned with the electric field and is affected by layer polarization of BLG. It has a strong particle-hole asymmetry; the resistance when the chemical potential is in the conduction band is significantly lower than when it is in the valence band, making the electron-doped regime more practical for potential applications.
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Affiliation(s)
- Mohit Kumar Jat
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shubhankar Mishra
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | | | - Robin Bajaj
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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12
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Biswas A, Xu R, Alvarez GA, Zhang J, Christiansen-Salameh J, Puthirath AB, Burns K, Hachtel JA, Li T, Iyengar SA, Gray T, Li C, Zhang X, Kannan H, Elkins J, Pieshkov TS, Vajtai R, Birdwell AG, Neupane MR, Garratt EJ, Ivanov TG, Pate BB, Zhao Y, Zhu H, Tian Z, Rubio A, Ajayan PM. Non-Linear Optics at Twist Interfaces in h-BN/SiC Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304624. [PMID: 37707242 DOI: 10.1002/adma.202304624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/24/2023] [Indexed: 09/15/2023]
Abstract
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, an alternative, simple, and scalable approach is suggested, where nanocrystallinetwo-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Rui Xu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Gustavo A Alvarez
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
| | | | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tymofii S Pieshkov
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Elias J Garratt
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Bradford B Pate
- Chemistry Division, Naval Research Laboratory, Washington, D.C., 20375, USA
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Hanyu Zhu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Zhiting Tian
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
- Center for Computational Quantum Physics (CCQ), Flatiron Institute, New York, NY, 10010, USA
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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13
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Liu J, Yang X, Fang H, Yan W, Ouyang W, Liu Z. In Situ Twistronics: A New Platform Based on Superlubricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305072. [PMID: 37867201 DOI: 10.1002/adma.202305072] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 07/19/2023] [Indexed: 10/24/2023]
Abstract
Twistronics, an emerging field focused on exploring the unique electrical properties induced by twist interface in graphene multilayers, has garnered significant attention in recent years. The general manipulation of twist angle depends on the assembly of van der Waals (vdW) layered materials, which has led to the discovery of unconventional superconductivity, ferroelectricity, and nonlinear optics, thereby expanding the realm of twistronics. Recently, in situ tuning of interlayer conductivity in vdW layered materials has been achieved based on scanning probe microscope. In this Perspective, the advancements in in situ twistronics are focused on by reviewing the state-of-the-art in situ manipulating technology, discussing the underlying mechanism based on the concept of structural superlubricity, and exploiting the real-time twistronic tests under scanning electron microscope (SEM). It is shown that the real-time manipulation under SEM allows for visualizing and monitoring the interface status during in situ twistronic testing. By harnessing the unique tribological properties of vdW layered materials, this novel platform not only enhances the fabrication of twistronic devices but also facilitates the fundamental understanding of interface phenomena in vdW layered materials. Moreover, this platform holds great promise for the application of twistronic-mechanical systems, providing avenues for the integration of twistronics into various mechanical frameworks.
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Affiliation(s)
- Jianxin Liu
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Xiaoqi Yang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Hui Fang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Weidong Yan
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
| | - Wengen Ouyang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
- State Key Laboratory of Water Resources Engineering and Management, Wuhan University, Wuhan, Hubei, 430072, P. R. China
| | - Ze Liu
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei, 430072, China
- State Key Laboratory of Water Resources Engineering and Management, Wuhan University, Wuhan, Hubei, 430072, P. R. China
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14
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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15
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Yan C, Zhao YX, Liu YW, He L. Kinetics of Nanobubbles in Tiny-Angle Twisted Bilayer Graphene. NANO LETTERS 2023; 23:8532-8538. [PMID: 37669559 DOI: 10.1021/acs.nanolett.3c02286] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Realization of high-quality van der Waals (vdWs) heterostructures by stacking two-dimensional (2D) layers requires atomically clean interfaces. Because of strong adhesion between the constituent layers, the vdWs forces could drive trapped contaminants together into submicron-size "bubbles", which leaves large interfacial areas atomically clean. Here, we study the kinetics of nanobubbles in tiny-angle twisted bilayer graphene (TBG) and our results reveal a substantial influence of the moiré superlattice on the motion of nanoscale interfacial substances. Our experiments indicate that the bubbles will mainly move along the triangular network of domain boundaries in the tiny-angle TBG when the sizes of the bubbles are comparable to that of an AA-stacking region. When the size of the bubble is smaller than that of an AA-stacking region, the bubble becomes motionless and is fixed in the AA-stacking region, because of its large out-of-plane corrugation.
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Affiliation(s)
- Chao Yan
- Center for Advanced Quantum Studies Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
| | - Ya-Xin Zhao
- Center for Advanced Quantum Studies Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
| | - Yi-Wen Liu
- Center for Advanced Quantum Studies Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
| | - Lin He
- Center for Advanced Quantum Studies Department of Physics, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
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16
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Zhao Y, Li G, Yao Y, Chen J, Xue M, Bao L, Jin K, Ge C, Chen J. Tunable heterostructural prism for planar polaritonic switch. Sci Bull (Beijing) 2023; 68:1757-1763. [PMID: 37507260 DOI: 10.1016/j.scib.2023.07.024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 04/30/2023] [Accepted: 07/11/2023] [Indexed: 07/30/2023]
Abstract
The study of phonon polaritons in van der Waals materials at the nanoscale has gained significant attention in recent years due to its potential applications in nanophotonics. The unique properties of these materials, such as their ability to support sub-diffraction imaging, sensing, and hyperlenses, have made them a promising avenue for the development of new techniques in the field. Despite these advancements, there still exists a challenge in achieving dynamically reversible manipulation of phonon polaritons in these materials due to their insulating properties. In this study, we present experimental results on the reversible manipulation of anisotropic phonon polaritons in α-MoO3 on top of a VO2 film, a phase-change material known for its dramatic changes in dielectric properties between its insulating and metallic states. Our findings demonstrate that the engineered VO2 film enables a switch in the propagation of polaritons in the mid-infrared region by modifying the dielectric properties of the film through temperature changes. Our results represent a promising approach to effectively control the flow of light energy at the nanoscale and offer the potential for the design and fabrication of integrated, flat sub-diffraction polaritonic devices. This study adds to the growing body of work in the field of nanophotonics and highlights the importance of considering phase-change materials for the development of new techniques in this field.
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Affiliation(s)
- Yongqian Zhao
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuyu Yao
- Department of Physics, National University of Singapore, Singapore 117550, Singapore
| | - Jiancui Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mengfei Xue
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou 325001, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lihong Bao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Jianing Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
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17
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Liu X, Wang X, Yu S, Wang G, Li B, Cui T, Lou Z, Ge H. Polarizability characteristics of twisted bilayer graphene quantum dots in the absence of periodic moiré potential. RSC Adv 2023; 13:23590-23600. [PMID: 37555100 PMCID: PMC10404935 DOI: 10.1039/d3ra03444e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 08/01/2023] [Indexed: 08/10/2023] Open
Abstract
Recent studies have documented a rich phenomenology in twisted bilayer graphene (TBG), which is significantly relevant to interlayer electronic coupling, in particular to the cases under an applied electric field. While polarizability measures the response of electrons against applied fields, this work adopts a unique strategy of decomposing global polarizability into distributional contributions to access the interlayer polarization in TBG, as a function of varying twisting angles (θ). Through the construction of a model of twisted graphene quantum dots, we assess distributional polarizability at the first-principles level. Our findings demonstrate that the polarizability perpendicular to the graphene plates can be decomposed into intralayer dipoles and interlayer charge-transfer (CT) components, the latter of which provides an explicit measurement of the interlayer coupling strength and charge transfer potential. Our analysis further reveals that interlayer polarizability dominates the polarizability variation during twisting. Intriguingly, the largest interlayer polarizability and CT driven by an external field occur in the misaligned structures with a size-dependent small angle corresponding to the first appearance of AB stacking, rather than the well-recognized Bernal structures. A derived equation is then employed to address the size dependence on the angle corresponding to the largest values in interlayer polarizability and CT. Our investigation not only characterizes the CT features in the interlayer polarizability of TBG quantum dots, but also sheds light on the existence of the strongest interlayer coupling and charge transfer at small twist angles in the presence of an external electric field, thereby providing a comprehensive understanding of the novel properties of graphene-based nanomaterials.
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Affiliation(s)
- Xiangyue Liu
- The Affiliated Cancer Hospital of Zhengzhou University, Henan Cancer Hospital Zhengzhou 450008 China
| | - Xian Wang
- Institute of Atomic and Molecular Physics, Key Laboratory of High Energy Density Physics of Ministry of Education, Sichuan University Chengdu 610065 China
| | - Shengping Yu
- School of Chemistry and Environment, Southwest Minzu University Chengdu 610041 China
| | - Guangzhao Wang
- School of Electronic Information Engineering, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University Chongqing 408100 China
| | - Bing Li
- The Affiliated Cancer Hospital of Zhengzhou University, Henan Cancer Hospital Zhengzhou 450008 China
| | - Tiantian Cui
- The Affiliated Cancer Hospital of Zhengzhou University, Henan Cancer Hospital Zhengzhou 450008 China
| | - Zhaoyang Lou
- The Affiliated Cancer Hospital of Zhengzhou University, Henan Cancer Hospital Zhengzhou 450008 China
| | - Hong Ge
- The Affiliated Cancer Hospital of Zhengzhou University, Henan Cancer Hospital Zhengzhou 450008 China
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18
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Hu J, Tan J, Al Ezzi MM, Chattopadhyay U, Gou J, Zheng Y, Wang Z, Chen J, Thottathil R, Luo J, Watanabe K, Taniguchi T, Wee ATS, Adam S, Ariando A. Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures. Nat Commun 2023; 14:4142. [PMID: 37438404 DOI: 10.1038/s41467-023-39893-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 06/30/2023] [Indexed: 07/14/2023] Open
Abstract
The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry. Employing the so-called "golden rule of three", here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where the twist angles between graphene and top/bottom hBN are both close to zero. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~ 0.2°. Finally, we extend our technique to low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.
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Affiliation(s)
- Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Junyou Tan
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Mohammed M Al Ezzi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Udvas Chattopadhyay
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Jian Gou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Yuntian Zheng
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Zihao Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Jiayu Chen
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Reshmi Thottathil
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Jiangbo Luo
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shaffique Adam
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
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19
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Pham PV, Mai TH, Do HB, Ponnusamy VK, Chuang FC. Integrated Graphene Heterostructures in Optical Sensing. MICROMACHINES 2023; 14:mi14051060. [PMID: 37241683 DOI: 10.3390/mi14051060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2023] [Revised: 05/14/2023] [Accepted: 05/14/2023] [Indexed: 05/28/2023]
Abstract
Graphene-an outstanding low-dimensional material-exhibited many physics behaviors that are unknown over the past two decades, e.g., exceptional matter-light interaction, large light absorption band, and high charge carrier mobility, which can be adjusted on arbitrary surfaces. The deposition approaches of graphene on silicon to form the heterostructure Schottky junctions was studied, unveiling new roadmaps to detect the light at wider-ranged absorption spectrums, e.g., far-infrared via excited photoemission. In addition, heterojunction-assisted optical sensing systems enable the active carriers' lifetime and, thereby, accelerate the separation speed and transport, and then they pave new strategies to tune high-performance optoelectronics. In this mini-review, an overview is considered concerning recent advancements in graphene heterostructure devices and their optical sensing ability in multiple applications (ultrafast optical sensing system, plasmonic system, optical waveguide system, optical spectrometer, or optical synaptic system) is discussed, in which the prominent studies for the improvement of performance and stability, based on the integrated graphene heterostructures, have been reported and are also addressed again. Moreover, the pros and cons of graphene heterostructures are revealed along with the syntheses and nanofabrication sequences in optoelectronics. Thereby, this gives a variety of promising solutions beyond the ones presently used. Eventually, the development roadmap of futuristic modern optoelectronic systems is predicted.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Ho Chi Minh City 700000, Vietnam
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry and Research Center for Precision Environmental Medicine, Kaohsiung Medical University (KMU), Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital (KMUH), Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
- Center for Theoretical and Computational Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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20
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Abstract
The invention of scanning probe microscopy revolutionized the way electronic phenomena are visualized1. Whereas present-day probes can access a variety of electronic properties at a single location in space2, a scanning microscope that can directly probe the quantum mechanical existence of an electron at several locations would provide direct access to key quantum properties of electronic systems, so far unreachable. Here, we demonstrate a conceptually new type of scanning probe microscope-the quantum twisting microscope (QTM)-capable of performing local interference experiments at its tip. The QTM is based on a unique van der Waals tip, allowing the creation of pristine two-dimensional junctions, which provide a multitude of coherently interfering paths for an electron to tunnel into a sample. With the addition of a continuously scanned twist angle between the tip and sample, this microscope probes electrons along a line in momentum space similar to how a scanning tunnelling microscope probes electrons along a line in real space. Through a series of experiments, we demonstrate room-temperature quantum coherence at the tip, study the twist angle evolution of twisted bilayer graphene, directly image the energy bands of monolayer and twisted bilayer graphene and, finally, apply large local pressures while visualizing the gradual flattening of the low-energy band of twisted bilayer graphene. The QTM opens the way for new classes of experiments on quantum materials.
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21
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Choi WJ, Lee SH, Park BC, Kotov NA. Terahertz Circular Dichroism Spectroscopy of Molecular Assemblies and Nanostructures. J Am Chem Soc 2022; 144:22789-22804. [DOI: 10.1021/jacs.2c04817] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Won Jin Choi
- Biointerfaces Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Physical and Life Sciences, Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Sang Hyun Lee
- Biointerfaces Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Bum Chul Park
- Biointerfaces Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Nicholas A. Kotov
- Biointerfaces Institute, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Biomedical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Program in Macromolecular Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
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22
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Pei S, Wang Z, Xia J. Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials. ACS NANO 2022; 16:11498-11503. [PMID: 35943159 DOI: 10.1021/acsnano.1c11498] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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23
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Su C, Zhang F, Kahn S, Shevitski B, Jiang J, Dai C, Ungar A, Park JH, Watanabe K, Taniguchi T, Kong J, Tang Z, Zhang W, Wang F, Crommie M, Louie SG, Aloni S, Zettl A. Tuning colour centres at a twisted hexagonal boron nitride interface. NATURE MATERIALS 2022; 21:896-902. [PMID: 35835818 DOI: 10.1038/s41563-022-01303-4] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Accepted: 05/30/2022] [Indexed: 06/15/2023]
Abstract
The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. Here, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe-Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.
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Affiliation(s)
- Cong Su
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Fang Zhang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Salman Kahn
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Brian Shevitski
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Jingwei Jiang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Chunhui Dai
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Alex Ungar
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Ji-Hoon Park
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Jing Kong
- Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China
| | - Wenqing Zhang
- Department of Physics, Southern University of Science and Technology, Shenzhen, China
| | - Feng Wang
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Michael Crommie
- Department of Physics, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA
| | - Steven G Louie
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Shaul Aloni
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Alex Zettl
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA.
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24
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Piccinini G, Mišeikis V, Novelli P, Watanabe K, Taniguchi T, Polini M, Coletti C, Pezzini S. Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene. NANO LETTERS 2022; 22:5252-5259. [PMID: 35776918 PMCID: PMC9284678 DOI: 10.1021/acs.nanolett.2c01114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moiré potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a 2.4°-twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to "tear-and-stack" exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly.
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Affiliation(s)
- Giulia Piccinini
- NEST,
Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Pietro Novelli
- Istituto
Italiano di Tecnologia, Via Melen 83, 16152 Genova, Italy
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Marco Polini
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Fisica, Università di Pisa, Largo Bruno Pontecorvo 3, 56127 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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25
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 83] [Impact Index Per Article: 41.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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26
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Wu X, Chen X, Yang R, Zhan J, Ren Y, Li K. Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105877. [PMID: 35044721 DOI: 10.1002/smll.202105877] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 11/25/2021] [Indexed: 06/14/2023]
Abstract
2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.
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Affiliation(s)
- Xin Wu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Xiyue Chen
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Ruxue Yang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai, Guangdong, 519082, China
| | - Jianbin Zhan
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Yingzhi Ren
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
| | - Kun Li
- State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing, 400044, China
- Chongqing Key Laboratory of Metal Additive Manufacturing (3D Printing), Chongqing University, Chongqing, 400044, China
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27
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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28
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 114] [Impact Index Per Article: 57.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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29
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Iyengar SA, Puthirath AB, Swaminathan V. Realizing Quantum Technologies in Nanomaterials and Nanoscience. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2107839. [PMID: 35119138 DOI: 10.1002/adma.202107839] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Revised: 11/08/2021] [Indexed: 06/14/2023]
Abstract
A brief overview of quantum materials and their prospects for applications, in the near, mid, and far-term in the areas of quantum information science, spintronics, valleytronics, and twistronics and those involving topology are covered in this perspective. The material and processing challenges that will modulate the realism of the applications will be discussed as well.
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Affiliation(s)
- Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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30
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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31
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Sun X, Zhang S, Liu Z, Zhu H, Huang J, Yuan K, Wang Z, Watanabe K, Taniguchi T, Li X, Zhu M, Mao J, Yang T, Kang J, Liu J, Ye Y, Han ZV, Zhang Z. Correlated states in doubly-aligned hBN/graphene/hBN heterostructures. Nat Commun 2021; 12:7196. [PMID: 34893613 PMCID: PMC8664858 DOI: 10.1038/s41467-021-27514-y] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 11/17/2021] [Indexed: 11/08/2022] Open
Abstract
Interfacial moiré superlattices in van der Waals vertical assemblies effectively reconstruct the crystal symmetry, leading to opportunities for investigating exotic quantum states. Notably, a two-dimensional nanosheet has top and bottom open surfaces, allowing the specific case of doubly aligned super-moiré lattice to serve as a toy model for studying the tunable lattice symmetry and the complexity of related electronic structures. Here, we show that by doubly aligning a graphene monolayer to both top and bottom encapsulating hexagonal boron nitride (h-BN), multiple conductivity minima are observed away from the main Dirac point, which are sensitively tunable with respect to the small twist angles. Moreover, our experimental evidences together with theoretical calculations suggest correlated insulating states at integer fillings of -5, -6, -7 electrons per moiré unit cell, possibly due to inter-valley coherence. Our results provide a way to construct intriguing correlations in 2D electronic systems in the weak interaction regime.
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Affiliation(s)
- Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 200031, Shanghai, China
| | - Zhiyong Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Honglei Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Jinqiang Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Kai Yuan
- State Key Lab for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, 100871, Beijing, China
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China
| | - Zhenhua Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China.
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, 410073, Changsha, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
| | - Jun Kang
- Beijing Computational Science Research Center, 100193, Beijing, China.
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China.
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, 200031, Shanghai, China.
| | - Yu Ye
- State Key Lab for Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, 100871, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, 100871, Beijing, China.
| | - Zheng Vitto Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, China.
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Material Science and Engineering, University of Science and Technology of China, 230026, Anhui, China
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32
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Gao X, Sun H, Kang DH, Wang C, Wang QJ, Nam D. Heterostrain-enabled dynamically tunable moiré superlattice in twisted bilayer graphene. Sci Rep 2021; 11:21402. [PMID: 34725380 PMCID: PMC8560801 DOI: 10.1038/s41598-021-00757-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Accepted: 10/05/2021] [Indexed: 11/25/2022] Open
Abstract
The ability to precisely control moiré patterns in two-dimensional materials has enabled the realization of unprecedented physical phenomena including Mott insulators, unconventional superconductivity, and quantum emission. Along with the twist angle, the application of independent strain in each layer of stacked two-dimensional materials-termed heterostrain-has become a powerful means to manipulate the moiré potential landscapes. Recent experimental studies have demonstrated the possibility of continuously tuning the twist angle and the resulting physical properties. However, the dynamic control of heterostrain that allows the on-demand manipulation of moiré superlattices has yet to be experimentally realized. Here, by harnessing the weak interlayer van der Waals bonding in twisted bilayer graphene devices, we demonstrate the realization of dynamically tunable heterostrain of up to 1.3%. Polarization-resolved Raman spectroscopy confirmed the existence of substantial heterostrain by presenting triple G peaks arising from the independently strained graphene layers. Theoretical calculations revealed that the distorted moiré patterns via heterostrain can significantly alter the electronic structure of twisted bilayer graphene, allowing the emergence of multiple absorption peaks ranging from near-infrared to visible spectral ranges. Our experimental demonstration presents a new degree of freedom towards the dynamic modulation of moiré superlattices, holding the promise to unveil unprecedented physics and applications of stacked two-dimensional materials.
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Affiliation(s)
- Xuejiao Gao
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Hao Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Dong-Ho Kang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
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Abstract
Two-dimensional crystals provide exceptional opportunities for integrating dissimilar materials and forming interfaces where distinct properties and phenomena emerge. To date, research has focused on two basic heterostructure types: vertical van der Waals stacks and laterally joined monolayer crystals with in-plane line interfaces. Much more diverse architectures and interface configurations can be realized in the few-layer and multilayer regime, and if mechanical stacking and single-layer growth are replaced by processes taking advantage of self-organization, conversions between polymorphs, phase separation, strain effects, and shaping into the third dimension. Here, we highlight such opportunities for engineering heterostructures, focusing on group IV chalcogenides, a class of layered semiconductors that lend themselves exceptionally well for exploring novel van der Waals architectures, as well as advanced methods including in situ microscopy during growth and nanometer-scale probes of light-matter interactions. The chosen examples point to fruitful future directions and inspire innovative developments to create unconventional van der Waals heterostructures beyond stacking.
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34
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Preclinical assessment on neuronal regeneration in the injury-related microenvironment of graphene-based scaffolds. NPJ Regen Med 2021; 6:31. [PMID: 34078912 PMCID: PMC8172906 DOI: 10.1038/s41536-021-00142-2] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 05/14/2021] [Indexed: 11/23/2022] Open
Abstract
As the application of graphene nanomaterials gets increasingly attractive in the field of tissue engineering and regenerative medicine, the long-term evaluation is necessary and urgent as to their biocompatibility and regenerative capacity in different tissue injuries, such as nerve, bone, and heart. However, it still remains controversial about the potential biological effects of graphene on neuronal activity, especially after severe nerve injuries. In this study, we establish a lengthy peripheral nerve defect rat model and investigate the potential toxicity of layered graphene-loaded polycaprolactone scaffold after implantation during 18 months in vivo. In addition, we further identify possible biologically regenerative effects of this scaffold on myelination, axonal outgrowth, and locomotor function recovery. It is confirmed that graphene-based nanomaterials exert negligible toxicity and repair large nerve defects by dual regulation of Schwann cells and astroglia in the central and peripheral nervous systems. The findings enlighten the future of graphene nanomaterial as a key type of biomaterials for clinical translation in neuronal regeneration.
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