Topological states in finite graphene nanoribbons tuned by electric fields

In this comprehensive study, we conduct a theoretical investigation into the Stark shift of topological states (TSs) in finite armchair graphene nanoribbons (AGNRs) and heterostructures under transverse electric fields. Our focus centers on the multiple end zigzag edge states of AGNRs and the interface states of9--7--9AGNR heterostructures. For the formal TSs, we observe a distinctive blue Stark shift in energy levels relative to the electric field within a range where the energy levels of TSs do not merge into the energy levels of bulk states. Conversely, for the latter TSs, we identify an oscillatory Stark shift in energy levels around the Fermi level. Simultaneously, we reveal the impact of the Stark effect on the transmission coefficients for both types of TSs. Notably, we uncover intriguing spectra in the multiple end zigzag edge states. In the case of finite9--7--9AGNR heterostructures, the spectra of transmission coefficient reveal that the coupling strength between the topological interface states can be well controlled by the transverse electric fields. The outcomes of this research not only contribute to a deeper understanding of the electronic property in graphene-based materials but also pave the way for innovations in next-generation electronic devices and quantum technologies.

Cornertronics in Two-Dimensional Second-Order Topological Insulators

Traditional electronic devices rely on the electron's intrinsic degrees of freedom (d.o.f.) to process information. However, additional d.o.f., like the valley, can emerge in the low-energy states of certain systems. Here, we show that the quantum dots constructed from two-dimensional second-order topological insulators posses a new kind of d.o.f., namely corner freedom, related to the topological corner states that reside at different corners of the systems. Since the corner states are well separated in real space, they can be individually and intuitively manipulated, giving rise to the concept of cornertronics. Via symmetry analysis and material search, we identify the TiSiCO-family monolayers as the first prototype of cornertronics materials, where the corner states can be controlled by both electric and optical fields due to novel corner-layer coupling effect and corner-contrasted linear dichroism. Furthermore, we find that the band gap of the TiSiCO nanodisk lies in the terahertz region and is robust to size reduction. These results indicate that the TiSiCO nanodisks can be used to design terahertz devices with ultrasmall size and electric-field tunable band gap. Besides, the TiSiCO nanodisks are simultaneously sensitive to both the strength and polarization of the terahertz waves. Our findings not only pave the way for cornertronics, but also open a new direction for research in two-dimensional second-order topological insulators, quantum dots, and terahertz electronics.

Quantum interference enhances the performance of single-molecule transistors

Quantum effects in nanoscale electronic devices promise to lead to new types of functionality not achievable using classical electronic components. However, quantum behaviour also presents an unresolved challenge facing electronics at the few-nanometre scale: resistive channels start leaking owing to quantum tunnelling. This affects the performance of nanoscale transistors, with direct source-drain tunnelling degrading switching ratios and subthreshold swings, and ultimately limiting operating frequency due to increased static power dissipation. The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects can be exploited in molecular-scale electronics, this could provide a route to lower energy consumption and boost device performance. Here we demonstrate these effects experimentally, showing how the performance of molecular transistors is improved when the resistive channel contains two destructively interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a >7 kHz operating frequency and stability over >105 cycles. We fully map the anti-resonance interference features in conductance, reproduce the behaviour by density functional theory calculations and trace back the high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturized electronics.

Adsorption effects of acetone and acetonitrile on defected penta-PdSe2 nanoribbons: a DFT study

Using DFT calculations, the structural and electronic properties of the ZZ7 p-PdSe2 nanoribbons (ZZ7) with the four kinds of vacancy defects, including ZZ7-VPd, ZZ7-VSe, ZZ7-VPd+Se, and ZZ7-V2Se are studied, in which their stability, diverse geometries, and altered electronic properties are determined through the formation energies, optimal structural parameters, electronic band structures, and DOSs. Specifically, the formation energies of all studied systems show significant negative values around -3.9 eV, evidencing their good thermal stability. The geometries of four defective structures exhibit different diversification, whereas only the ZZ7-V2Se structure possesses the highly enhanced feature, identified as the most effective substrate for the acetone and acetonitrile adsorption. On the electronic behaviors, the ZZ7 band structure displays the nonmagnetic metallic characteristics that become the ferromagnetic half-metallic band structures for the ZZ7-VPd and ZZ7-VSe and the ferromagnetic semi-metallic band structures for the ZZ7-VPd+Se and ZZ7-V2Se. For adsorption of the acetone and acetonitrile on the ZZ7-V2Se structure, the energetic stability, adsorption sites, adsorption distances, charge transfers, and electronic characteristics of the adsorbed systems are determined by the adsorption energies, optimal adsorption sites, adsorption distances, Mulliken populations, and DOSs. The adsorption energies of the acetone- and acetonitrile-adsorbed ZZ7-V2Se systems display significant values at -1.2 eV and -0.86 eV at the preferable sites of 8 and 11, respectively, indicating their great adsorption ability. The adsorption mechanism of the acetone- and acetonitrile-adsorbed systems belongs to the physisorption owing to absence of chemical bonds, in which the bond lengths of the ZZ7-V2Se substrate show a very small deviation. Under the acetone and acetonitrile adsorptions, the ferromagnetic semi-metallic DOSs of the ZZ7-V2Se become the ferromagnetic half-metallic DOSs for the ZZ7-V2Se-acetone-8 and the ferromagnetic semiconducting DOSs for the ZZ7-V2Se-acetonitrile-11. Our systematic results can provide a complete understanding of the acetone- and acetonitrile adsorptions on the potential ZZ7-V2Se structure, which is very useful for nanosensor application.

Understanding and Preventing Lubrication Failure at the Carbon Atomic Steps

Two-dimensional (2D) lamellar materials are normally capable of rendering super-low friction, wear protection, and adhesion reduction in nanoscale due to their ultralow shear strength between two basal plane surfaces. However, high friction at step edges prevents the 2D materials from achieving super-low friction in macroscale applications and eventually leads to failure of lubrication performance. Here, taking graphene as an example, the authors report that not all step edges are detrimental. The armchair (AC) step edges are found to have only a minor topographic effect on friction, while the zigzag (ZZ) edges cause friction two orders of magnitude larger than the basal plane. The AC step edge is less reactive and thus more durable. However, the ZZ structure prevails when step edges are produced mechanically, for example, through mechanical exfoliation or grinding of graphite. The authors found a way to make the high-friction ZZ edge superlubricious by reconstructing the (6,6) hexagon structure to the (5,7) azulene-like structure through thermal annealing in an inert gas environment. This will facilitate the realization of graphene-based superlubricity over a wide range of industrial applications in which avoiding the involvement of step edges is difficult.

First-principles investigations for the electronic and transport properties of zigzag SiC nanoribbons with Fluorine passivation/adsorption

Nanoribbons with different edge functionalization display interesting electronic properties for various device applications. It requires the necessity of exploring the novel passivating elements commensurate to various technological applications. In this direction, here we have compared the effect of H and F-passivation on the edges of zigzag SiC nanoribbons (ZSiCNR) using density functional theory based calculations. Remarkably, present study reveals that F could be used as an effective passivating element for ZSiCNR similar to widely explored H-passivations. Various possible combinations of F/H are found to have stable structural integrity for practical applications. The effect of F-adatom adsorption is also discussed which present peculiar electronic properties. The half-metallic behavior is observed to be realized via F-adsoprtion which is further confirmed with the transport calculations. The obtained negative differential resistance along the spin dependent electron transport pledges towards wide spread applications of considered ZSiCNR interacting with F.

Realizing pure spin current by the photogalvanic effect in armchair graphene nanoribbons with nano-constriction engineering

We propose nano-constriction engineering of armchair graphene nanoribbons (AGNRs) to construct photoelectric nanodevices aiming to generate pure spin currents through the photogalvanic effect (PGE) using first-principles calculations. Two devices with different symmetries were designed, one by introducing only one isosceles zigzag triangle defect on the lower edge of the central region ('D1') and the other by two symmetrically distributed isosceles zigzag triangle defects on the two edges ('D2'). The results show that pure spin current without accompanying charge current can be generated in both junctions, but with a big difference that pure spin current can be generated only at special polarization angles θ = 0°, 90° and 180° in device D1, while it can be generated at any polarization angle in D2. The robustness in D2 is attributed to the spatial inversion symmetry in geometry and the inversion antisymmetry of spin density. These findings suggest that local magnetism engineering provides a reliable method for generating robust pure spin currents with the PGE in nonmagnetic systems, especially opening up new possibilities for the application of AGNRs in spintronics.

Employing functionalized graphene quantum dots to combat coronavirus and enterovirus

The ongoing COVID-19 (i.e., coronavirus) pandemic continues to adversely affect the human life, economy, and the world's ecosystem. Although significant progress has been made in developing antiviral materials for the coronavirus, much more work is still needed. In this work, N-functionalized graphene quantum dots (GQDs) were designed and synthesized as the antiviral nanomaterial for Feline Coronavirus NTU156 (FCoV NTU156) and Enterovirus 71 (EV71)) with ultra-high inhibition (>99.9%). To prepare the GQD samples, a unique solid-phase microwave-assisted technique was developed and the cell toxicity was established on the H171 and H184 cell lines after 72 h incubation, indicating superior biocompatibility. The surface functionality of GQDs (i.e., the phenolic and amino groups) plays a vital role in interacting with the receptor-binding-domain of the spike protein. It was also found that the addition of polyethylene glycol is advantageous for the dispersion and the adsorption of functionalized GQDs onto the virus surface, leading to an enhanced virus inhibition. The functionality of as-prepared GQD nanomaterials was further confirmed where a functionalized GQD-coated glass was shown to be extremely effective in hindering the virus spread for a relatively long period (>20 h).

Development of Tailored Graphene Nanoparticles: Preparation, Sorting and Structure Assessment by Complementary Techniques

We present a thorough structural characterization of Graphene Nano Particles (GNPs) prepared by means of physical procedures, i.e., ball milling and ultra-sonication of high-purity synthetic graphite. UV-vis absorption/extinction spectroscopy, Dynamic Light Scattering, Transmission Electron Microscopy, IR and Raman spectroscopies were performed. Particles with small size were obtained, with an average lateral size <L> = 70−120 nm, formed by few <N> = 1−10 stacked layers, and with a small number of carboxylic groups on the edges. GNPs relatively more functionalized were separated by centrifugation, which formed stable water dispersions without the need for any surfactant. A critical reading and unified interpretation of a wide set of spectroscopic data was provided, which demonstrated the potential of Specular Reflectance Infrared Spectroscopy for the diagnosis and quantification of chemical functionalization of GNPs. Raman parameters commonly adopted for the characterization of graphitic materials do not always follow a monotonic trend, e.g., with the particle size and shape, thus unveiling some limitations of the available spectroscopic metrics. This issue was overcome thanks to a comparative spectra analysis, including spectra deconvolution by means of curve fitting procedures, experiments on reference materials and the exploitation of complementary characterization techniques.

Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply

Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.

First-Principles Insights on the Formation Mechanism of Innermost Layers of Solid Electrolyte Interphases on Carbon Anodes for Lithium-Ion Batteries

A solid electrolyte interphase (SEI) plays an essential role in the functionality and service life of ion batteries, where the structure and formation mechanism are still in the midst. Here, we investigate the initial decomposition and reactions of ethylene carbonate (EC) on the surface of a graphite anode using first-principles calculations. EC initially decomposes via the homolytic ring opening with the product of radical anion CH₂CH₂OCO₂^-. Bonding with Li, it forms a co-plane structure of CH₂CH₂OCO₂Li, with a binding energy of 1.35 eV. The adsorption energy is -0.91 eV and -0.24 eV on the graphite zigzag edge surface and basal surface, respectively. Two CH₂CH₂OCO₂Li molecules react to form a two-head structure of lithium ethylene dicarbonate (CH₂OCO₂Li)₂, namely LEDC, which further forms a network preferring zigzag edge surfaces. Our results suggest that the first and innermost layers of the solid electrolyte interphase are CH₂CH₂OCO₂Li sticking and networking on the zigzag edges of the surfaces of graphite anodes.

Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

Two-dimensional crystals' edge structures not only influence their overall properties but also dictate their formation due to edge-mediated synthesis and etching processes. Edges must be carefully examined because they often display complex, unexpected features at the atomic scale, such as reconstruction, functionalization, and uncontrolled contamination. Here, we examine atomic-scale edge structures and uncover reconstruction behavior in bilayer phosphorene. We use in situ transmission electron microscopy (TEM) of phosphorene/graphene specimens at elevated temperatures to minimize surface contamination and reduce e-beam damage, allowing us to observe intrinsic edge configurations. The bilayer zigzag (ZZ) edge was found to be the most stable edge configuration under e-beam irradiation. Through first-principles calculations and TEM image analysis under various tilting and defocus conditions, we find that bilayer ZZ edges undergo edge reconstruction and so acquire closed, self-passivated edge configurations. The extremely low formation energy of the closed bilayer ZZ edge and its high stability against e-beam irradiation are confirmed by first-principles calculations. Moreover, we fabricate bilayer phosphorene nanoribbons with atomically sharp closed ZZ edges. The identified bilayer ZZ edges will aid in the fundamental understanding of the synthesis, degradation, reconstruction, and applications of phosphorene and related structures.

Various defects in graphene: a review

Pristine graphene has been considered one of the most promising materials because of its excellent physical and chemical properties. However, various defects in graphene produced during synthesis or fabrication hinder its performance for applications such as electronic devices, transparent electrodes, and spintronic devices. Due to its intrinsic bandgap and nonmagnetic nature, it cannot be used in nanoelectronics or spintronics. Intrinsic and extrinsic defects are ultimately introduced to tailor electronic and magnetic properties and take advantage of their hidden potential. This article emphasizes the current advancement of intrinsic and extrinsic defects in graphene for potential applications. We also discuss the limitations and outlook for such defects in graphene.

Anisotropic Fracture of Graphene Revealed by Surface Steps on Graphite

The anisotropic fracture toughness G(θ) is an intrinsic feature of graphene and is fundamental for fabrication, functioning, and robustness of graphene-based devices. However, existing results show significant discrepancies on the anisotropic factor, i.e., the ratio between zigzag (ZZ) and armchair (AC) directions, G_{ZZ}/G_{AC}, both qualitatively and quantitatively. Here, we investigate the anisotropic fracture of graphene by atomic steps on cleaved graphite surfaces. Depending on the relation between the peeling direction and local lattice orientation, two categories of steps with different structures and behaviors are observed. In one category are straight steps well aligned with local ZZ directions, while in the other are steps consisting of nanoscale ZZ and AC segments. Combined with an analysis on fracture mechanics, the microscale morphology of steps and statistics of their directions provides a measurement on the anisotropic factor of G_{ZZ}/G_{AC}=0.971, suggesting that the ZZ direction has a slightly lower fracture toughness. The results provide an experimental benchmark for the widely scattered existing results, and offer constraints on future models of graphene fracture.

Statistical signature of electrobreakdown in graphene nanojunctions

Controlled electrobreakdown of graphene is important for the fabrication of stable nanometer-size tunnel gaps, large-scale graphene quantum dots, and nanoscale resistive switches, etc. However, owing to the complex thermal, electronic, and electrochemical processes at the nanoscale that dictate the rupture of graphene, it is difficult to generate conclusions from individual devices. We describe here a way to explore the statistical signature of the graphene electrobreakdown process. Such analysis tells us that feedback-controlled electrobreakdown of graphene in the air first shows signs of joule heating-induced cleaning followed by rupturing of the graphene lattice that is manifested by the lowering of its conductance. We show that when the conductance of the graphene becomes smaller than around 0.1 G0, the effective graphene notch width starts to decrease exponentially slower with time. Further, we show how this signature gets modified as we change the environment and or the substrate. Using statistical analysis, we show that the electrobreakdown under a high vacuum could lead to substrate modification and resistive-switching behavior, without the application of any electroforming voltage. This is attributed to the formation of a semiconducting filament that makes a Schottky barrier with the graphene. We also provide here the statistically extracted Schottky barrier threshold voltages for various substrate studies. Such analysis not only gives a better understanding of the electrobreakdown of graphene but also can serve as a tool in the future for single-molecule diagnostics.

Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond

Since the successful isolation of graphene in 2004, two-dimensional (2D) materials have become one of the focuses in material science owing to their extraordinary physical and chemical properties. In particular, 2D group VA elemental materials exhibit fascinating thickness-dependent band structures. Unfortunately, the well-known instability issue hinders their fundamental researches and practical applications. In this review, we first discuss the degradation mechanism of black phosphorus (BP), a most studied group VA material. Next, we summarize the methods to enhance BP stability with the focus of multifunctional passivation. Finally, we briefly discuss the protection strategies of other emerging group VA materials in recent years. This review provides insight for the degradation mechanism and protecting strategy for 2D group VA elements materials, which will promote their potential applications in electronics, optoelectronics, and biomedicine.

Eliminating Edge Electronic and Phonon States of Phosphorene Nanoribbon by Unique Edge Reconstruction

Edge termination plays a vital role in determining the properties of 2D materials. By performing compelling ab initio simulations, a lowest-energy U-edge [ZZ(U)] reconstruction is revealed in the bilayer phosphorene. Such reconstruction reduces 60% edge energy compared with the pristine one and occurs almost without an energy barrier, implying it should be the dominating edge in reality. The electronic band structure of phosphorene nanoribbon with such reconstruction resembles that of an intrinsic 2D layer, exhibiting nearly edgeless band characteristics. Although ZZ(U) changes the topology of phosphorene nanoribbons, simulated transmission electron microscope, scanning transmission electron microscope and scanning tunneling microscope images indicate it is very hard to be identified. One possible identified method is infrared/Raman analyses because the ZZ(U) edge alters vibrational modes dramatically. In addition, it also increases the thermal conductivity of PNR 1.4 and 2.3 times than the pristine and Klein edges.

Edge Doping Engineering of High-Performance Graphene Nanoribbon Molecular Spintronic Devices

We study the quantum transport properties of graphene nanoribbons (GNRs) with a different edge doping strategy using density functional theory combined with nonequilibrium Green's function transport simulations. We show that boron and nitrogen edge doping on the electrodes region can substantially modify the electronic band structures and transport properties of the system. Remarkably, such an edge engineering strategy effectively transforms GNR into a molecular spintronic nanodevice with multiple exceptional transport properties, namely: (i) a dual spin filtering effect (SFE) with 100% filtering efficiency; (ii) a spin rectifier with a large rectification ratio (RR) of 1.9 ×106; and (iii) negative differential resistance with a peak-to-valley ratio (PVR) of 7.1 ×105. Our findings reveal a route towards the development of high-performance graphene spintronics technology using an electrodes edge engineering strategy.

Current-Induced One-Dimensional Diffusion of Co Adatoms on Graphene Nanoribbons

One-dimensional diffusion of Co adatoms on graphene nanoribbons has been induced and investigated by means of scanning tunnelling microscopy (STM). To this end, the nanoribbons and the Co adatoms have been imaged before and after injecting current pulses into the nanoribbons, with the STM tip in direct contact with the ribbon. We observe current-induced motion of the Co atoms along the nanoribbons, which is approximately described by a distribution expected for a thermally activated one-dimensional random walk. This indicates that the nanoribbons reach temperatures far beyond 100 K, which is well above the temperature of the underlying Au substrate. This model system can be developed further for the study of electromigration at the single-atom level.

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

As one of the representatives of nano-graphene materials, graphene nanoribbons (GNRs) have more novel electrical properties, highly adjustable electronic properties, and optoelectronic properties than graphene due to their diverse geometric structures and atomic precision configurations. The electrical properties and band gaps of GNRs depend on their width, length, boundary configuration and other elemental doping, etc. With the improvement of the preparation technology and level of GNRs with atomic precision, increasing number of GNRs with different configurations are being prepared. They all show novel electrical properties and high tunability, which provides a broad prospect for the application of GNRs in the field of microelectronics. Here, we summarize the latest GNR-based achievements in recent years and summarize the latest electrical properties and potential applications of GNRs.

Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride

The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.

Self-passivation leads to semiconducting edges of black phosphorene

The edges of black phosphorene (BP) have been extensively explored. The previous experimental observations that all the BP edges are semiconducting implies that the as-cut edges of BP tend to be reconstructed. Here we present a global structural search of three typical BP edges, namely armchair, zigzag and zigzag-1 edges. It is found that all the three pristine edges are metastable, and all of them can be quickly self-passivated by (i) forming P[double bond, length as m-dash]P double bonds (one σ and one π bond), (ii) reconstructing new polygonal rings will all P atoms bonded with three sp³ bonds or (iii) forming a special P(2)-P(4) configuration with a two-coordinated P atom accommodating two lone pair electrons and one four-coordinated P atom without lone pair electrons. Highly different from the pristine edges, all these highly stable reconstructed edges are semiconducting. This study showed that the reconstruction of the edges of a 2D material, just like the surfaces of a 3D crystal, must be considered for both fundamental studies and practical applications. Besides BP, this study also sheds light on the structures and properties of the edges of many other 2D materials.

Origin of High Friction at Graphene Step Edges on Graphite

On graphite, friction is known to be more than an order of magnitude larger at step edge defects as compared to on the basal plane, especially when the counter surface slides from the lower terrace of the step to the upper terrace. Very different mechanisms have been proposed to explain this phenomenon, including atomic interactions between the counter surface and step edge (without physical deformation) and buckling or peeling deformation of the upper graphene terrace. Here, we use atomic force microscopy (AFM) and reactive molecular dynamic (MD) simulations to capture and differentiate the mechanisms proposed to cause high friction at step edges. AFM experiments reveal the difference between cases of no deformation and buckling deformation, and the latter case is attributed to the physical stress exerted by the sliding tip. Reactive MD simulations explore the process of peeling deformation due to tribochemical bond formation between the tip and the step edge. Combining the results of AFM experiments and MD simulations, it is found that each mechanism has identifiable and characteristic features in the lateral force and vertical height profiles recorded during the step-up process. The results demonstrate that buckling and peeling deformation of the graphene edge rarely occur under typical AFM experimental conditions and thus are unlikely to be the origin of high friction at step edges in most measurements. Instead, the high step-up friction is due to stick-slip behavior facilitated by the topographical change and atomic interactions between the tip and step edge without deformation of the graphene itself.

Shaping and Edge Engineering of Few-Layered Freestanding Graphene Sheets in a Transmission Electron Microscope

Full exploitation of graphene's superior properties requires the ability to precisely control its morphology and edge structures. We present such a structure-tailoring approach via controlled atom removal from graphene edges. With the use of a graphitic-carbon-capped tungsten nanoelectrode as a noncontact "milling" tool in a transmission electron microscope, graphene edge atoms approached by the tool tip are locally evaporated, thus allowing a freestanding graphene sheet to be tailored with high precision and flexibility. A threshold for the tip voltage of 3.6 ± 0.4 V, independent of polarity, is found to be the determining factor that triggers the controlled etching process. The dominant mechanisms involve weakening of carbon-carbon bonds through the interband excitation induced by tunneling electrons, assisted with a resistive-heating effect enhanced by high electric field, as elaborated by first-principles calculations. In addition to the precise shape and size control, this tip-based method enables fabrication of graphene edges with specific chiralities, such as "armchair" or "zigzag" types. The as-obtained edges can be further "polished" to become entirely atomically smooth via edge evaporation/reconstruction induced by in situ TEM Joule annealing. We finally demonstrate the potential of this technique for practical uses through creating a graphene-based point electron source, whose field emission characteristics can effectively be tuned via modifying its geometry.

The closed-edge structure of graphite and the effect of electrostatic charging

The properties of graphite, and of few-layer graphene, can be strongly influenced by the edge structure of the graphene planes, but there is still much that we do not understand about the geometry and stability of these edges. We present an experimental and theoretical study of the closed edges of graphite crystals, and of the effect of an electric field on their structure. High-resolution transmission electron microscopy is used to image the edge structure of fresh graphite and of graphite that has been exposed to an electric field, which experiences a separation of the graphene layers. Computer simulations based on density functional theory are used to rationalise and quantify the preference for the formation of multiple concentric loops at the edges. A model is also presented to explain how the application of an electric field leads to the separation of the folded edges.

DFT simulations unravel the thermodynamics of folded edges in graphite, and explain why an electric field can open the loops.

Two-Dimensional Second-Order Topological Insulator in Graphdiyne

A second-order topological insulator (SOTI) in d spatial dimensions features topologically protected gapless states at its (d-2)-dimensional boundary at the intersection of two crystal faces, but is gapped otherwise. As a novel topological state, it has been attracting great interest, but it remains a challenge to identify a realistic SOTI material in two dimensions (2D). Here, based on combined first-principles calculations and theoretical analysis, we reveal the already experimentally synthesized 2D material graphdiyne as the first realistic example of a 2D SOTI, with topologically protected 0D corner states. The role of crystalline symmetry, the robustness against symmetry breaking, and the possible experimental characterization are discussed. Our results uncover a hidden topological character of graphdiyne and promote it as a concrete material platform for exploring the intriguing physics of higher-order topological phases.

Combinatorial immune and stress response, cytoskeleton and signal transduction effects of graphene and triphenyl phosphate (TPP) in mussel Mytilus galloprovincialis

Owing to its unique surface properties, graphene can absorb environmental pollutants, thereby affecting their environmental behavior. Triphenyl phosphate (TPP) is a highly produced flame retardant. However, the toxicities of graphene and its combinations with contaminants remain largely unexplored. In this work, we investigated the toxicological effects of graphene and TPP to mussel Mytilus galloprovincialis. Results indicated that graphene could damage the digestive gland tissues, but no significant changes were found in the graphene + TPP co-exposure group. There was a significant decrease in the content of GSH and the activities of GST and CAT in the co-exposure group compared to that in graphene-exposed group. It seemed that the adsorption of TPP on graphene could inhibit the surface activity of graphene and thus reduced its tissue damage and oxidative stress in mussels. Expression levels of stress response (MyD88a), cytoskeleton (MHC1, PMyo and TMyo) and reproductive (CP450 and HSD) genes were up-regulated in the graphene-exposed group, but significantly down-regulated after combined exposure of graphene and TPP. Furthermore, PPI analysis proved that the interactions of HSP90AA1 with UNC45B and FKBP4/5/6/L contributed to the toxicity caused by the combined exposure. Because of the potential toxicity of graphene and TPP, government administrators should consider its risks prior to the widespread environmental exposure.

Tailoring fluorescence emissions, quantum yields, and white light emitting from nitrogen-doped graphene and carbon nitride quantum dots

Highly fluorescent N-doped graphene quantum dots (NGQDs) and graphitic carbon nitride quantum dots (CNQDs, g-C₃N₄) were synthesized using a solid-phase microwave-assisted (SPMA) technique. The SPMA method, based on the pyrolysis of citric acid and urea with different recipes, is capable of producing quantum dots with coexisting NGQDs and CNQDs at 280 °C within only five minutes. The photoluminescence (PL) emissions from NGQD and CNQDs are strongly dependent on the excitation wavelength and the solvent type, i.e., water, ethanol, and N-methyl pyrrolidinone. The unique attribute of the quantum dots, possessing a multiple chromophoric band-gap structure, originates from the presence of g-C₃N₄, defect-related emissive traps, and grain boundaries. Thus, an appropriate excitation wavelength induces a conjugated π electron system to fulfill the most probable absorption band, resulting in wavelength-dependent emissions including ultraviolet, visible and infrared light. The quantum yield of the NGQD and CNQD samples can reach as high as 68.1%. Accordingly, a light-emitting device using the combination of the NGQD and CNQD powder embedded polymeric film can emit white-like light with ultra-high power-conversion efficiency.

Chemical and physical origins of friction on surfaces with atomic steps

Friction occurs through a complex set of processes that act together to resist relative motion. However, despite this complexity, friction is typically described using a simple phenomenological expression that relates normal and lateral forces via a coefficient, the friction coefficient. This one parameter encompasses multiple, sometimes competing, effects. To better understand the origins of friction, here, we study a chemically and topographically well-defined interface between silica and graphite with a single-layer graphene step edge. We identify the separate contributions of physical and chemical processes to friction and show that a single friction coefficient can be separated into two terms corresponding to these effects. The findings provide insight into the chemical and topographic origins of friction and suggest means of tuning surfaces by leveraging competing frictional processes.

Advance in Close-Edged Graphene Nanoribbon: Property Investigation and Structure Fabrication

The absence of dangling bonds in close-edged graphene nanoribbons (CEGNRs) confers upon them a series of fascinating properties, especially when compared with cylindrical carbon nanotubes and open-edged GNRs. Here, the configuration of CEGNRs is described, followed by the structure-related properties, including mechanical, thermal, electrical, optical, and magnetic properties. Based on the unique structures and extraordinary properties, their potential applications in a variety of fields, such as field-effect transistors, energy suppliers, nanoactuators, and fibers, are discussed. Remarkably, the strategies applied for generating CEGNRs, mainly from the collapse of carbon nanotubes and graphene tubes, are depicted in detail. Finally, the prospects in the research area of CEGNRs are proposed.

Nanomechanics of graphene

The super-high strength of single-layer graphene has attracted great interest. In practice, defects resulting from thermodynamics or introduced by fabrication, naturally or artificially, play a pivotal role in the mechanical behaviors of graphene. More importantly, high strength is just one aspect of the magnificent mechanical properties of graphene: its atomic-thin geometry not only leads to ultra-low bending rigidity, but also brings in many other unique properties of graphene in terms of mechanics in contrast to other carbon allotropes, including fullerenes and carbon nanotubes. The out-of-plane deformation is of a 'soft' nature, which gives rise to rich morphology and is crucial for morphology control. In this review article, we aim to summarize current theoretical advances in describing the mechanics of defects in graphene and the theory to capture the out-of-plane deformation. The structure-mechanical property relationship in graphene, in terms of its elasticity, strength, bending and wrinkling, with or without the influence of imperfections, is presented.

Extrinsic and Dynamic Edge States of Two-Dimensional Lead Halide Perovskites

Edges of two-dimensional (2D) halide perovskites are found to exhibit unusual properties such as enhanced photoluminescence lifetime and reduced photoluminescence emission energy. Here, we report the formation mechanism and the dynamic nature of edge states on exfoliated 2D halide perovskite thin crystals. In contrast to other 2D materials, the edge states in 2D perovskites are extrinsic and can be triggered by moisture with a concentration as low as ∼0.5 ppm. High-resolution atomic force microscopy and transmission electron microscopy characterizations reveal the width of the low-energy states is ∼40 nm wide. A temperature-dependent photoluminescence study suggests the edge states are a combination of several lower-energy states. Importantly, we demonstrate that the charge carriers on the dynamically formed edge states are not only long-lived but also highly mobile and can be conducted along the edges effectively with high mobilities of 5.4-7.0 cm² V^-1 s^-1. This work provides significant insights on the origin of the edge states in 2D perovskites and provides routes to manipulate their optical and electrical properties through controlling their edges.

Ferromagnetism of 1T'-MoS2 Nanoribbons Stabilized by Edge Reconstruction and Its Periodic Variation on Nanoribbons Width

Nanoribbons (NRs) of two-dimensional (2D) materials have attracted intensive research interests because of exotic physical properties at edges as well as tunable properties via width control. In this paper, using density functional theory (DFT) calculations, we discover sensitive dependence of magnetic properties of 1T'-MoS₂ NRs, that is, periodic variation of magnetic moments between 0.1 and 1.2 μ _B, on NR width (even or odd number of MoS₂ units). Our results reveal that a special edge reconstruction, which is not recognized before, stabilizes the ferromagnetic (FM) ground state. Our results also suggest that the FM state could be stable under ambient condition. This study indicates a promising means to integrate multiple magnetic units for small-scale functional devices, such as information storage and spintronics, on a single piece of MoS₂ NR by designing segments with different width.

Langmuir-Blodgett self-assembly of ultrathin graphene quantum dot films with modulated optical properties

Multiple-color-emissive graphene quantum dots (GQDs) have great potential in diverse applications such as bioimaging, light emission, and photocatalysis. Growing interest in GQDs is largely focused on their macro-scale aggregations that could inherit the unique properties of individual dots. However, the lack of advanced fabrication methods limits the practical applications of GQDs. Here, we employed a Langmuir-Blodgett (LB) technique to fabricate ultrathin, high-quality GQD aggregated films with well-modulated optical properties in a wide range of wavelengths. Through the combination of a bottom-up synthesis of GQDs and the LB assembly method, uniform, closely packed, and ultra-thin GQD films can be self-assembled with a well-controlled thickness on different substrates. The photoluminescence (PL) spectra of ultra-thin GQD films have an obvious red-shift compared with isolated GQD solution. We then elucidate remarkably strong energy transfer in self-assembled GQDs. Furthermore, the ultra-thin GQD films exhibit a clear excitation-dependent PL that could almost cover the entire visible light. This convenient self-assembly method and systematic optical and physical studies of ultra-thin GQD films may provide a new direction for developing low-cost, GQD film-based light-emitting devices.

Selective electrochemical functionalization of the graphene edge

We report the direct exclusive modification of the edge of a single graphene monolayer with nanoparticles or organic functionalities under ambient conditions.

We present a versatile and simple method using electrochemistry for the exclusive functionalization of the edge of a graphene monolayer with metal nanoparticles or polymeric amino groups. The attachment of metal nanoparticles allows us to exploit surface-enhanced Raman scattering to characterize the chemistry of both the pristine and the functionalized graphene edge. For the pristine patterned graphene edge, we observe the typical edge-related modes, while for the functionalized graphene edge we identify the chemical structure of the functional layer by vibrational fingerprinting. The ability to obtain single selectively functionalized graphene edges routinely on an insulating substrate opens an avenue for exploring the effect of edge chemistry on graphene properties systematically.

Optically Forged Diffraction-Unlimited Ripples in Graphene

In nanofabrication, just as in any other craft, the scale of spatial details is limited by the dimensions of the tool at hand. For example, the smallest details of direct laser writing with far-field light are set by the diffraction limit, which is approximately half of the used wavelength. In this work, we overcome this universal assertion by optically forging graphene ripples that show features with dimensions unlimited by diffraction. Thin sheet elasticity simulations suggest that the scaled-down ripples originate from the interplay between substrate adhesion, in-plane strain, and circular symmetry. The optical forging technique thus offers an accurate way to modify and shape 2D materials and facilitates the creation of controllable nanostructures for plasmonics, resonators, and nano-optics.

Structure of graphene and its disorders: a review

Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

Magnetic edge states and coherent manipulation of graphene nanoribbons

Graphene, a single-layer network of carbon atoms, has outstanding electrical and mechanical properties ¹ . Graphene ribbons with nanometre-scale widths^2,3 (nanoribbons) should exhibit half-metallicity ⁴ and quantum confinement. Magnetic edges in graphene nanoribbons^5,6 have been studied extensively from a theoretical standpoint because their coherent manipulation would be a milestone for spintronic ⁷ and quantum computing devices ⁸ . However, experimental investigations have been hampered because nanoribbon edges cannot be produced with atomic precision and the graphene terminations that have been proposed are chemically unstable ⁹ . Here we address both of these problems, by using molecular graphene nanoribbons functionalized with stable spin-bearing radical groups. We observe the predicted delocalized magnetic edge states and test theoretical models of the spin dynamics and spin-environment interactions. Comparison with a non-graphitized reference material enables us to clearly identify the characteristic behaviour of the radical-functionalized graphene nanoribbons. We quantify the parameters of spin-orbit coupling, define the interaction patterns and determine the spin decoherence channels. Even without any optimization, the spin coherence time is in the range of microseconds at room temperature, and we perform quantum inversion operations between edge and radical spins. Our approach provides a way of testing the theory of magnetism in graphene nanoribbons experimentally. The coherence times that we observe open up encouraging prospects for the use of magnetic nanoribbons in quantum spintronic devices.

Interfacial engineering in graphene bandgap

Graphene exhibits superior mechanical strength, high thermal conductivity, strong light-matter interactions, and, in particular, exceptional electronic properties. These merits make graphene an outstanding material for numerous potential applications. However, a graphene-based high-performance transistor, which is the most appealing application, has not yet been produced, which is mainly due to the absence of an intrinsic electronic bandgap in this material. Therefore, bandgap opening in graphene is urgently needed, and great efforts have been made regarding this topic over the past decade. In this review article, we summarise recent theoretical and experimental advances in interfacial engineering to achieve bandgap opening. These developments are divided into two categories: chemical engineering and physical engineering. Chemical engineering is usually destructive to the pristine graphene lattice via chemical functionalization, the introduction of defects, doping, chemical bonds with substrates, and quantum confinement; the latter largely maintains the atomic structure of graphene intact and includes the application of an external field, interactions with substrates, physical adsorption, strain, electron many-body effects and spin-orbit coupling. Although these pioneering works have not met all the requirements for electronic applications of graphene at once, they hold great promise in this direction and may eventually lead to future applications of graphene in semiconductor electronics and beyond.

Electrical Stressing Induced Monolayer Vacancy Island Growth on TiSe2

To ensure practical applications of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands on TiSe₂ surfaces as a model system, we have observed nonlinear area evolution and growth from triangular to hexagonal driven by scanning tunneling microscopy (STM) subjected electrical stressing. The observed growth dynamics represent a 2D departure from the linear area growth law expected for bulk vacancy clustering. Our simulations of monolayer island evolution using phase-field modeling and first-principles calculations are in good agreement with our experimental observations, and point toward preferential edge atom dissociation under STM scanning driving the observed nonlinear area growth. We further quantified a parabolic growth rate dependence with respect to the tunneling current magnitude. The results could be potentially important for device reliability in systems containing ultrathin transition metal dichalcogenides and related 2D materials subject to electrical stressing.