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Xie X, Leng P, Ding Z, Yang J, Yan J, Zhou J, Li Z, Ai L, Cao X, Jia Z, Zhang Y, Zhao M, Zhu W, Gao Y, Dong S, Xiu F. Surface photogalvanic effect in Ag 2Te. Nat Commun 2024; 15:5651. [PMID: 38969644 PMCID: PMC11226672 DOI: 10.1038/s41467-024-49576-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 06/11/2024] [Indexed: 07/07/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.
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Affiliation(s)
- Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zhenyu Ding
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinshan Yang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Jingyi Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Junchen Zhou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Shaoming Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China.
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2
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LaGasse SW, Proscia NV, Cress CD, Fonseca JJ, Cunningham PD, Janzen E, Edgar JH, Pennachio DJ, Culbertson J, Zalalutdinov M, Robinson JT. Hexagonal Boron Nitride Slab Waveguides for Enhanced Spectroscopy of Encapsulated 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309777. [PMID: 37992676 DOI: 10.1002/adma.202309777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 11/08/2023] [Indexed: 11/24/2023]
Abstract
The layered insulator hexagonal boron nitride (hBN) is a critical substrate that brings out the exceptional intrinsic properties of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). In this work, the authors demonstrate how hBN slabs tuned to the correct thickness act as optical waveguides, enabling direct optical coupling of light emission from encapsulated layers into waveguide modes. Molybdenum selenide (MoSe2 ) and tungsten selenide (WSe2 ) are integrated within hBN-based waveguides and demonstrate direct coupling of photoluminescence emitted by in-plane and out-of-plane transition dipoles (bright and dark excitons) to slab waveguide modes. Fourier plane imaging of waveguided photoluminescence from MoSe2 demonstrates that dry etched hBN edges are an effective out-coupler of waveguided light without the need for oil-immersion optics. Gated photoluminescence of WSe2 demonstrates the ability of hBN waveguides to collect light emitted by out-of-plane dark excitons.Numerical simulations explore the parameters of dipole placement and slab thickness, elucidating the critical design parameters and serving as a guide for novel devices implementing hBN slab waveguides. The results provide a direct route for waveguide-based interrogation of layered materials, as well as a way to integrate layered materials into future photonic devices at arbitrary positions whilst maintaining their intrinsic properties.
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Affiliation(s)
- Samuel W LaGasse
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Nicholas V Proscia
- NRC Postdoctoral Fellow residing at the US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Cory D Cress
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jose J Fonseca
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Paul D Cunningham
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Eli Janzen
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - James H Edgar
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Daniel J Pennachio
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - James Culbertson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Maxim Zalalutdinov
- Acoustics Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jeremy T Robinson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
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3
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Ren T, Wang J, Han K, Kang Y, Kumar A, Zhang G, Wang Z, Oulton RF, Eda G, Gong X. Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity. NANO LETTERS 2023; 23:11601-11607. [PMID: 38063776 DOI: 10.1021/acs.nanolett.3c03357] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional (2D) semiconductors have attracted great attention as a novel class of gain materials for low-threshold, on-chip coherent light sources. Despite several experimental reports on lasing, the underlying gain mechanism of 2D materials remains elusive due to a lack of key information, including modal gain and the confinement factor. Here, we demonstrate a novel approach to directly determine the absorption coefficient of monolayer WS2 by characterizing the whispering gallery modes in a van der Waals microdisk cavity. By exploiting the cavity's high intrinsic quality factor of 2.5 × 104, the absorption coefficient spectrum and confinement factor are experimentally resolved with unprecedented accuracy. The excitonic gain reduces the WS2 absorption coefficient by 2 × 104 cm-1 at room temperature, and the experimental confinement factor is found to agree with the theoretical prediction. These results are essential for unveiling the gain mechanism in emergent, low-threshold 2D-semiconductor-based laser devices.
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Affiliation(s)
- Tianhua Ren
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Junyong Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
| | - Kaizhen Han
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Yuye Kang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Annie Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
| | - Gong Zhang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
| | - Zhe Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117543, Singapore
| | - Rupert F Oulton
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Goki Eda
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117543, Singapore
| | - Xiao Gong
- Department of Electrical and Computer Engineering, National University of Singapore, 1 Engineering Drive 2, Singapore 117576, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
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4
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Biswas A, Xu R, Alvarez GA, Zhang J, Christiansen-Salameh J, Puthirath AB, Burns K, Hachtel JA, Li T, Iyengar SA, Gray T, Li C, Zhang X, Kannan H, Elkins J, Pieshkov TS, Vajtai R, Birdwell AG, Neupane MR, Garratt EJ, Ivanov TG, Pate BB, Zhao Y, Zhu H, Tian Z, Rubio A, Ajayan PM. Non-Linear Optics at Twist Interfaces in h-BN/SiC Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304624. [PMID: 37707242 DOI: 10.1002/adma.202304624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/24/2023] [Indexed: 09/15/2023]
Abstract
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, an alternative, simple, and scalable approach is suggested, where nanocrystallinetwo-dimensional (2D) film on 3D substrates yields twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. This work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Rui Xu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Gustavo A Alvarez
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Jin Zhang
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
| | | | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Tymofii S Pieshkov
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
- Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Elias J Garratt
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, MD, 20783, USA
| | - Bradford B Pate
- Chemistry Division, Naval Research Laboratory, Washington, D.C., 20375, USA
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Hanyu Zhu
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
| | - Zhiting Tian
- Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, 14853, USA
| | - Angel Rubio
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free-Electron Laser Science, Chaussee 149, 22761, Luruper, Germany
- Center for Computational Quantum Physics (CCQ), Flatiron Institute, New York, NY, 10010, USA
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, TX, 77005, USA
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5
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Schwarz J, Niebauer M, Koleśnik-Gray M, Szabo M, Baier L, Chava P, Erbe A, Krstić V, Rommel M, Hutzler A. Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials. SMALL METHODS 2023; 7:e2300618. [PMID: 37462245 DOI: 10.1002/smtd.202300618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 06/13/2023] [Indexed: 10/20/2023]
Abstract
Van der Waals materials exhibit intriguing properties for future electronic and optoelectronic devices. As those unique features strongly depend on the materials' thickness, it has to be accessed precisely for tailoring the performance of a specific device. In this study, a nondestructive and technologically easily implementable approach for accurate thickness determination of birefringent layered materials is introduced by combining optical reflectance measurements with a modular model comprising a 4×4 transfer matrix method and the optical components relevant to light microspectroscopy. This approach is demonstrated being reliable and precise for thickness determination of anisotropic materials like highly oriented pyrolytic graphite and black phosphorus in a range from atomic layers up to more than 100 nm. As a key feature, the method is well-suited even for encapsulated layers outperforming state of-the-art techniques like atomic force microscopy.
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Affiliation(s)
- Julian Schwarz
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Electron Devices, Cauerstraße 6, 91058, Erlangen, Germany
| | - Michael Niebauer
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Electron Devices, Cauerstraße 6, 91058, Erlangen, Germany
| | - Maria Koleśnik-Gray
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Applied Physics, Staudtstraße 7, 91058, Erlangen, Germany
| | - Maximilian Szabo
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany
| | - Leander Baier
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany
| | - Phanish Chava
- Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Artur Erbe
- Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
| | - Vojislav Krstić
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Applied Physics, Staudtstraße 7, 91058, Erlangen, Germany
| | - Mathias Rommel
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystraße 10, 91058, Erlangen, Germany
| | - Andreas Hutzler
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Electron Devices, Cauerstraße 6, 91058, Erlangen, Germany
- Forschungszentrum Jülich GmbH, Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (IEK-11), Cauerstraße 1, 91058, Erlangen, Germany
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6
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Li Y, Jiang P, Lyu X, Li X, Qi H, Tang J, Xue Z, Yang H, Lu G, Sun Q, Hu X, Gao Y, Gong Q. Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy. Nat Commun 2023; 14:4837. [PMID: 37563183 PMCID: PMC10415285 DOI: 10.1038/s41467-023-40603-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Accepted: 07/31/2023] [Indexed: 08/12/2023] Open
Abstract
Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters.
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Affiliation(s)
- Yaolong Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Pengzuo Jiang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Xiaying Lyu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Xiaofang Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Huixin Qi
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Jinglin Tang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Zhaohang Xue
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
| | - Hong Yang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, Shanxi, China
| | - Guowei Lu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, Shanxi, China
| | - Quan Sun
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China.
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, Shanxi, China.
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, Shanxi, China.
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, 226010, Nantong, Jiangsu, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, 030006, Taiyuan, Shanxi, China
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7
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Sánchez Arribas I, Taniguchi T, Watanabe K, Weig EM. Radiation Pressure Backaction on a Hexagonal Boron Nitride Nanomechanical Resonator. NANO LETTERS 2023; 23:6301-6307. [PMID: 37460106 PMCID: PMC10375595 DOI: 10.1021/acs.nanolett.3c00544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Hexagonal boron nitride (hBN) is a van der Waals material with excellent mechanical properties hosting quantum emitters and optically active spin defects, with several of them being sensitive to strain. Establishing optomechanical control of hBN will enable hybrid quantum devices that combine the spin degree of freedom with the cavity optomechanical toolbox. In this Letter, we report the first observation of radiation pressure backaction at telecom wavelengths with a hBN drum-head mechanical resonator. The thermomechanical motion of the resonator is coupled to the optical mode of a high finesse fiber-based Fabry-Pérot microcavity in a membrane-in-the-middle configuration. We are able to resolve the optical spring effect and optomechanical damping with a single photon coupling strength of g0/2π = 1200 Hz. Our results pave the way for tailoring the mechanical properties of hBN resonators with light.
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Affiliation(s)
- Irene Sánchez Arribas
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Eva M Weig
- Department of Electrical Engineering, School of Computation, Information and Technology, Technical University of Munich, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 Munich, Germany
- TUM Center for Quantum Engineering (ZQE), 85748 Garching, Germany
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8
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Biswas A, Maiti R, Lee F, Chen CY, Li T, Puthirath AB, Iyengar SA, Li C, Zhang X, Kannan H, Gray T, Saadi MASR, Elkins J, Birdwell AG, Neupane MR, Shah PB, Ruzmetov DA, Ivanov TG, Vajtai R, Zhao Y, Gaeta AL, Tripathi M, Dalton A, Ajayan PM. Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications. NANOSCALE HORIZONS 2023; 8:641-651. [PMID: 36880586 DOI: 10.1039/d2nh00557c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. Low temperature growth supersedes the requirement of elevated growth temperatures accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of the functional properties and the consequent deterioration of the device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process, which exhibited various functional properties for potential applications. Comprehensive chemical, spectroscopic and microscopic characterizations confirmed the growth of ordered nanosheet-like hexagonal BN (h-BN). Functionally, the nanosheets show hydrophobicity, high lubricity (low coefficient of friction), and a low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of potential applications for these room temperature grown h-BN nanosheets as the synthesis can be feasible on any given substrate, thus creating a scenario for "h-BN on demand" under a frugal thermal budget.
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Affiliation(s)
- Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Rishi Maiti
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
| | - Frank Lee
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Cecilia Y Chen
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Tao Li
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Sathvik Ajay Iyengar
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Chenxi Li
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Xiang Zhang
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Harikishan Kannan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Tia Gray
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | | | - Jacob Elkins
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - A Glen Birdwell
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Mahesh R Neupane
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Pankaj B Shah
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Dmitry A Ruzmetov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Tony G Ivanov
- DEVCOM Army Research Laboratory, RF Devices and Circuits, Adelphi, Maryland 20783, USA
| | - Robert Vajtai
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
| | - Yuji Zhao
- Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA
| | - Alexander L Gaeta
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, 10027, USA.
- Department of Electrical Engineering, Columbia University, New York, 10027, USA
| | - Manoj Tripathi
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Alan Dalton
- Department of Physics and Astronomy, University of Sussex, Brighton BN1 9RH, UK.
| | - Pulickel M Ajayan
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, USA.
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9
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Kühner L, Sortino L, Tilmann B, Weber T, Watanabe K, Taniguchi T, Maier SA, Tittl A. High-Q Nanophotonics over the Full Visible Spectrum Enabled by Hexagonal Boron Nitride Metasurfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209688. [PMID: 36585851 DOI: 10.1002/adma.202209688] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 12/14/2022] [Indexed: 06/17/2023]
Abstract
All-dielectric optical metasurfaces with high quality (Q) factors have been hampered by the lack of simultaneously lossless and high-refractive-index materials over the full visible spectrum. In fact, the use of low-refractive-index materials is unavoidable for extending the spectral coverage due to the inverse correlation between the bandgap energy (and therefore the optical losses) and the refractive index (n). However, for Mie resonant photonics, smaller refractive indices are associated with reduced Q factors and low mode volume confinement. Here, symmetry-broken quasi bound states in the continuum (qBICs) are leveraged to efficiently suppress radiation losses from the low-index (n ≈ 2) van der Waals material hexagonal boron nitride (hBN), realizing metasurfaces with high-Q resonances over the complete visible spectrum. The rational use of low- and high-refractive-index materials as resonator components is analyzed and the insights are harnessed to experimentally demonstrate sharp qBIC resonances with Q factors above 300, spanning wavelengths between 400 and 1000 nm from a single hBN flake. Moreover, the enhanced electric near fields are utilized to demonstrate second-harmonic generation with enhancement factors above 102 . These results provide a theoretical and experimental framework for the implementation of low-refractive-index materials as photonic media for metaoptics.
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Affiliation(s)
- Lucca Kühner
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
| | - Luca Sortino
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
| | - Benjamin Tilmann
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
| | - Thomas Weber
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Stefan A Maier
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
- School of Physics and Astronomy, Monash University, Wellington Rd, Clayton, VIC, 3800, Australia
- The Blackett Laboratory, Department of Physics, Imperial College London, London, SW7 2AZ, UK
| | - Andreas Tittl
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, and Center for NanoScience, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539, München, Germany
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10
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Kim S. All-2D material photonic devices. NANOSCALE ADVANCES 2023; 5:323-328. [PMID: 36756268 PMCID: PMC9846477 DOI: 10.1039/d2na00732k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/22/2022] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extensively used in almost all scientific research areas, from fundamental research to applications. Initially, 2D materials were integrated with conventional non-2D materials having well-established manufacturing methods. Recently, the concept of constructing photonic devices exclusively from 2D materials has emerged. Various devices developed to date have been demonstrated based on monolithic or hetero 2D materials. In this review, photonic devices that solely consist of 2D materials are introduced, including photonic waveguides, lenses, and optical cavities. Exploring photonic devices that are made entirely of 2D materials could open interesting prospects as they enable the thinnest devices possible because of their extraordinarily high refractive index. In addition, unique characteristics of 2D materials, such as high optical anisotropy and spin orbit coupling, might provide intriguing applications.
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Affiliation(s)
- Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne Australia
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11
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Xu H, Ding B, Xu Y, Huang Z, Wei D, Chen S, Lan T, Pan Y, Cheng HM, Liu B. Magnetically tunable and stable deep-ultraviolet birefringent optics using two-dimensional hexagonal boron nitride. NATURE NANOTECHNOLOGY 2022; 17:1091-1096. [PMID: 35953540 DOI: 10.1038/s41565-022-01186-1] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 06/28/2022] [Indexed: 06/15/2023]
Abstract
Birefringence is a fundamental optical property that can induce phase retardation of polarized light. Tuning the birefringence of liquid crystals is a core technology for light manipulation in current applications in the visible and infrared spectral regions. Due to the strong absorption or instability of conventional liquid crystals in deep-ultraviolet light, tunable birefringence remains elusive in this region, notwithstanding its significance in diverse applications. Here we show a stable and birefringence-tunable deep-ultraviolet modulator based on two-dimensional hexagonal boron nitride. It has an extremely large optical anisotropy factor of 6.5 × 10-12 C2 J-1 m-1 that gives rise to a specific magneto-optical Cotton-Mouton coefficient of 8.0 × 106 T-2 m-1, which is about five orders of magnitude higher than other potential deep-ultraviolet-transparent media. The large coefficient, high stability (retention rate of 99.7% after 270 cycles) and wide bandgap of boron nitride collectively enable the fabrication of stable deep-ultraviolet modulators with magnetically tunable birefringence.
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Affiliation(s)
- Hao Xu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
| | - Baofu Ding
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China.
- Institute of Technology for Carbon Neutrality/Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
| | - Youan Xu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
- Xi'an Research Institute of High Technology, Xi'an, China
| | - Ziyang Huang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
| | - Dahai Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
| | - Shaohua Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
| | - Tianshu Lan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
| | - Yikun Pan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China.
- Institute of Technology for Carbon Neutrality/Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
- Advanced Technology Institute, University of Surrey, Guildford, UK.
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China.
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12
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Mondal M, Dash AK, Singh A. Optical Microscope Based Universal Parameter for Identifying Layer Number in Two-Dimensional Materials. ACS NANO 2022; 16:14456-14462. [PMID: 36074897 DOI: 10.1021/acsnano.2c04833] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Optical contrast is the most common preliminary method to identify layer number of two-dimensional (2D) materials, but it is seldom used as a confirmatory technique. We explain the reason for variation of optical contrast between imaging systems, motivating system-independent measurement of optical contrast as a critical need. We describe a universal method to quantify the layer number using the RGB (red-green-blue) and RAW optical images. For RGB images, the slope of 2D flake (MoS2, WSe2, graphene) intensity vs substrate intensity is extracted from optical images with varying lamp power. The intensity slope identifies layer number and is system independent. For RAW images, intensity slopes and intensity ratios are completely system and intensity independent. Intensity slope (for RGB) and intensity ratio (for RAW) are thus universal parameters for identifying layer number. The RAW format is not present in all imaging systems, but it can confirm layer number using a single optical image, making it a rapid and system-independent universal method. A Fresnel-reflectance-based optical model provides an excellent match with experiments. Furthermore, we have created a MATLAB-based graphical user interface that can identify layer number rapidly. This technique is expected to accelerate the preparation of heterostructures and to fulfill a prolonged need for universal optical contrast method.
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Affiliation(s)
- Mainak Mondal
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
| | - Ajit K Dash
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
| | - Akshay Singh
- Department of Physics, Indian Institute of Science, Bengaluru 560012, India
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13
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Scalable anisotropic cooling aerogels by additive freeze-casting. Nat Commun 2022; 13:5553. [PMID: 36138000 PMCID: PMC9499976 DOI: 10.1038/s41467-022-33234-8] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 09/08/2022] [Indexed: 11/21/2022] Open
Abstract
Cooling in buildings is vital to human well-being but inevitability consumes significant energy, adding pressure on achieving carbon neutrality. Thermally superinsulating aerogels are promising to isolate the heat for more energy-efficient cooling. However, most aerogels tend to absorb the sunlight for unwanted solar heat gain, and it is challenging to scale up the aerogel fabrication while maintaining consistent properties. Herein, we develop a thermally insulating, solar-reflective anisotropic cooling aerogel panel containing in-plane aligned pores with engineered pore walls using boron nitride nanosheets by an additive freeze-casting technique. The additive freeze-casting offers highly controllable and cumulative freezing dynamics for fabricating decimeter-scale aerogel panels with consistent in-plane pore alignments. The unique anisotropic thermo-optical properties of the nanosheets combined with in-plane pore channels enable the anisotropic cooling aerogel to deliver an ultralow out-of-plane thermal conductivity of 16.9 mW m−1 K−1 and a high solar reflectance of 97%. The excellent dual functionalities allow the anisotropic cooling aerogel to minimize both parasitic and solar heat gains when used as cooling panels under direct sunlight, achieving an up to 7 °C lower interior temperature than commercial silica aerogels. This work offers a new paradigm for the bottom-up fabrication of scalable anisotropic aerogels towards practical energy-efficient cooling applications. Scaling up anisotropic freeze-casting processes can be challenging due to the temperature gradient farther from the cold source. Here, authors report an additive freeze-casting technique able to produce large-scale aerogel panels and demonstrate it towards practical passive cooling applications.
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14
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Qian C, Villafañe V, Soubelet P, Hötger A, Taniguchi T, Watanabe K, Wilson NP, Stier AV, Holleitner AW, Finley JJ. Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS_{2} Monolayers. PHYSICAL REVIEW LETTERS 2022; 128:237403. [PMID: 35749182 DOI: 10.1103/physrevlett.128.237403] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 02/11/2022] [Accepted: 05/24/2022] [Indexed: 06/15/2023]
Abstract
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of "free" trions in pristine hBN/MoS_{2}/hBN heterostructures coupled to single mode (Q>10^{4}) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS_{2} monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass (c.m.) wave function is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way toward harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander Hötger
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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15
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Zotev PG, Wang Y, Sortino L, Severs Millard T, Mullin N, Conteduca D, Shagar M, Genco A, Hobbs JK, Krauss TF, Tartakovskii AI. Transition Metal Dichalcogenide Dimer Nanoantennas for Tailored Light-Matter Interactions. ACS NANO 2022; 16:6493-6505. [PMID: 35385647 PMCID: PMC9047003 DOI: 10.1021/acsnano.2c00802] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Accepted: 03/28/2022] [Indexed: 05/31/2023]
Abstract
Transition metal dichalcogenides have emerged as promising materials for nanophotonic resonators because of their large refractive index, low absorption within a large portion of the visible spectrum, and compatibility with a wide range of substrates. Herein, we use these properties to fabricate WS2 double-pillar nanoantennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark-field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe2 monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240 for dimer gaps of 150 nm. We introduce postfabrication atomic force microscope repositioning and rotation of dimer nanoantennas, achieving gaps as small as 10 ± 5 nm, which enables a host of potential applications, including strong Purcell enhancement of single-photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nanophotonics by exploring applications enabled by their properties.
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Affiliation(s)
- Panaiot G. Zotev
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
| | - Yue Wang
- Department
of Physics, University of York, York YO10 5DD, U.K.
| | - Luca Sortino
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
- Chair
in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maximilians-Universität, München 80539, Munich, Germany
| | - Toby Severs Millard
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
| | - Nic Mullin
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
| | | | - Mostafa Shagar
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
| | - Armando Genco
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
| | - Jamie K. Hobbs
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, U.K.
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16
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Wu M, Yang Y, Fei H, Lin H, Han Y, Zhao X, Chen Z. Unidirectional transmission of visible region topological edge states in hexagonal boron nitride valley photonic crystals. OPTICS EXPRESS 2022; 30:6275-6283. [PMID: 35209568 DOI: 10.1364/oe.439769] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Accepted: 02/01/2022] [Indexed: 06/14/2023]
Abstract
Here we theoretically design valley photonic crystals (VPCs) based on two-dimensional (2D) hexagonal boron nitride (hBN) materials, which are able to support topological edge states in the visible region. The edge states can achieve spin-dependent unidirectional transmission with a high forward transmittance up to 0.96 and a transmission contrast of 0.99. We further study the effect of refractive index on transmittance and bandwidth, and it is found that with the increase of refractive index, both transmittance and bandwidth increased accordingly. This study opens new possibilities in designing unidirectional transmission devices in the visible region and will find broad applications.
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17
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Wang Z, Kalathingal V, Hoang TX, Chu HS, Nijhuis CA. Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling. LIGHT, SCIENCE & APPLICATIONS 2021; 10:230. [PMID: 34750346 PMCID: PMC8575904 DOI: 10.1038/s41377-021-00659-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 09/13/2021] [Accepted: 10/08/2021] [Indexed: 05/10/2023]
Abstract
Inelastic quantum mechanical tunneling of electrons across plasmonic tunnel junctions can lead to surface plasmon polariton (SPP) and photon emission. So far, the optical properties of such junctions have been controlled by changing the shape, or the type of the material, of the electrodes, primarily with the aim to improve SPP or photon emission efficiencies. Here we show that by tuning the tunneling barrier itself, the efficiency of the inelastic tunneling rates can be improved by a factor of 3. We exploit the anisotropic nature of hexagonal boron nitride (hBN) as the tunneling barrier material in Au//hBN//graphene tunnel junctions where the Au electrode also serves as a plasmonic strip waveguide. As this junction constitutes an optically transparent hBN-graphene heterostructure on a glass substrate, it forms an open plasmonic system where the SPPs are directly coupled to the dedicated strip waveguide and photons outcouple to the far field. We experimentally and analytically show that the photon emission rate per tunneling electron is significantly improved (~ ×3) in Au//hBN//graphene tunnel junction due to the enhancement in the local density of optical states (LDOS) arising from the hBN anisotropy. With the dedicated strip waveguide, SPP outcoupling efficiency is quantified and is found to be ∼ 80% stronger than the radiative outcoupling in Au//hBN//graphene due to the high LDOS of the SPP decay channel associated with the inelastic tunneling. The new insights elucidated here deepen our understanding of plasmonic tunnel junctions beyond the isotropic models with enhanced LDOS.
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Affiliation(s)
- Zhe Wang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Vijith Kalathingal
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117564, Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
| | - Thanh Xuan Hoang
- Department of Electronics and Photonics, Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Hong-Son Chu
- Department of Electronics and Photonics, Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Christian A Nijhuis
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117564, Singapore.
- Hybrid Materials for Opto-Electronics Group, Department of Molecules and Materials, MESA+ Institute for Nanotechnology and Center for Brain-Inspired Nano Systems, Faculty of Science and Technology, University of Twente, 7500 AE, Enschede, The Netherlands.
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18
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Lassaline N, Thureja D, Chervy T, Petter D, Murthy PA, Knoll AW, Norris DJ. Freeform Electronic and Photonic Landscapes in Hexagonal Boron Nitride. NANO LETTERS 2021; 21:8175-8181. [PMID: 34591490 DOI: 10.1021/acs.nanolett.1c02625] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Atomically smooth hexagonal boron nitride (hBN) flakes have revolutionized two-dimensional (2D) optoelectronics. They provide the key substrate, encapsulant, and gate dielectric for 2D electronics while offering hyperbolic dispersion and quantum emission for photonics. The shape, thickness, and profile of these hBN flakes affect device functionality. However, researchers are restricted to simple, flat flakes, limiting next-generation devices. If arbitrary structures were possible, enhanced control over the flow of photons, electrons, and excitons could be exploited. Here, we demonstrate freeform hBN landscapes by combining thermal scanning-probe lithography and reactive-ion etching to produce previously unattainable flake structures with surprising fidelity. We fabricate photonic microelements (phase plates, grating couplers, and lenses) and show their straightforward integration, constructing a high-quality optical microcavity. We then decrease the length scale to introduce Fourier surfaces for electrons, creating sophisticated Moiré patterns for strain and band-structure engineering. These capabilities generate opportunities for 2D polaritonics, twistronics, quantum materials, and deep-ultraviolet devices.
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Affiliation(s)
- Nolan Lassaline
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Deepankur Thureja
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
- Quantum Photonics Group, Department of Physics, ETH Zurich, 8092 Zurich, Switzerland
| | - Thibault Chervy
- Quantum Photonics Group, Department of Physics, ETH Zurich, 8092 Zurich, Switzerland
- Physics and Informatics Laboratories, NTT Research, Inc., Sunnyvale, California 94085, United States
| | - Daniel Petter
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Puneet A Murthy
- Quantum Photonics Group, Department of Physics, ETH Zurich, 8092 Zurich, Switzerland
| | | | - David J Norris
- Optical Materials Engineering Laboratory, Department of Mechanical and Process Engineering, ETH Zurich, 8092 Zurich, Switzerland
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19
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Fröch JE, Spencer LP, Kianinia M, Totonjian DD, Nguyen M, Gottscholl A, Dyakonov V, Toth M, Kim S, Aharonovich I. Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities. NANO LETTERS 2021; 21:6549-6555. [PMID: 34288695 DOI: 10.1021/acs.nanolett.1c01843] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Lesley P Spencer
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Daniel D Totonjian
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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20
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Signatures of Wigner crystal of electrons in a monolayer semiconductor. Nature 2021; 595:53-57. [PMID: 34194018 DOI: 10.1038/s41586-021-03590-4] [Citation(s) in RCA: 54] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Accepted: 04/28/2021] [Indexed: 11/09/2022]
Abstract
When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two-dimensional systems are predicted to spontaneously break continuous-translation symmetry and form a quantum crystal1. Efforts to observe2-12 this elusive state of matter, termed a Wigner crystal, in two-dimensional extended systems have primarily focused on conductivity measurements on electrons confined to a single Landau level at high magnetic fields. Here we use optical spectroscopy to demonstrate that electrons in a monolayer semiconductor with density lower than 3 × 1011 per centimetre squared form a Wigner crystal. The combination of a high electron effective mass and reduced dielectric screening enables us to observe electronic charge order even in the absence of a moiré potential or an external magnetic field. The interactions between a resonantly injected exciton and electrons arranged in a periodic lattice modify the exciton bandstructure so that an umklapp resonance arises in the optical reflection spectrum, heralding the presence of charge order13. Our findings demonstrate that charge-tunable transition metal dichalcogenide monolayers14 enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy.
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21
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He M, Halimi SI, Folland TG, Sunku SS, Liu S, Edgar JH, Basov DN, Weiss SM, Caldwell JD. Guided Mid-IR and Near-IR Light within a Hybrid Hyperbolic-Material/Silicon Waveguide Heterostructure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004305. [PMID: 33522035 DOI: 10.1002/adma.202004305] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2020] [Revised: 11/28/2020] [Indexed: 06/12/2023]
Abstract
Silicon waveguides have enabled large-scale manipulation and processing of near-infrared optical signals on chip. Yet, expanding the bandwidth of guided waves to other frequencies will further increase the functionality of silicon as a photonics platform. Frequency multiplexing by integrating additional architectures is one approach to the problem, but this is challenging to design and integrate within the existing form factor due to scaling with the free-space wavelength. This paper demonstrates that a hexagonal boron nitride (hBN)/silicon hybrid waveguide can simultaneously enable dual-band operation at both mid-infrared (6.5-7.0 µm) and telecom (1.55 µm) frequencies, respectively. The device is realized via the lithography-free transfer of hBN onto a silicon waveguide, maintaining near-infrared operation. In addition, mid-infrared waveguiding of the hyperbolic phonon polaritons (HPhPs) supported in hBN is induced by the index contrast between the silicon waveguide and the surrounding air underneath the hBN, thereby eliminating the need for deleterious etching of the hyperbolic medium. The behavior of HPhP waveguiding in both straight and curved trajectories is validated within an analytical waveguide theoretical framework. This exemplifies a generalizable approach based on integrating hyperbolic media with silicon photonics for realizing frequency multiplexing in on-chip photonic systems.
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Affiliation(s)
- Mingze He
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Sami I Halimi
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37212, USA
| | - Thomas G Folland
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Physics and Astronomy, The University of Iowa, Iowa City, IA, 52242, USA
| | - Sai S Sunku
- Department of Physics, Columbia University, New York, NY, 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, 10027, USA
| | - Song Liu
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - James H Edgar
- Tim Taylor Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - D N Basov
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, 10027, USA
| | - Sharon M Weiss
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37212, USA
| | - Joshua D Caldwell
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, 37212, USA
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22
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Rigosi AF, Levy AL, Snure MR, Glavin NR. Turn of the decade: versatility of 2D hexagonal boron nitride. JPHYS MATERIALS 2021; 4:10.1088/2515-7639/abf1ab. [PMID: 34409257 PMCID: PMC8370033 DOI: 10.1088/2515-7639/abf1ab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.
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Affiliation(s)
- Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Antonio L Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Michael R Snure
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
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23
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Ross AM, Paternò GM, Dal Conte S, Scotognella F, Cinquanta E. Anisotropic Complex Refractive Indices of Atomically Thin Materials: Determination of the Optical Constants of Few-Layer Black Phosphorus. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E5736. [PMID: 33339218 PMCID: PMC7766739 DOI: 10.3390/ma13245736] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Revised: 12/10/2020] [Accepted: 12/14/2020] [Indexed: 11/21/2022]
Abstract
In this work, studies of the optical constants of monolayer transition metal dichalcogenides and few-layer black phosphorus are briefly reviewed, with particular emphasis on the complex dielectric function and refractive index. Specifically, an estimate of the complex index of refraction of phosphorene and few-layer black phosphorus is given. The complex index of refraction of this material was extracted from differential reflectance data reported in the literature by employing a constrained Kramers-Kronig analysis combined with the transfer matrix method. The reflectance contrast of 1-3 layers of black phosphorus on a silicon dioxide/silicon substrate was then calculated using the extracted complex indices of refraction.
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Affiliation(s)
- Aaron M. Ross
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milan, Italy; (A.M.R.); (S.D.C.)
| | - Giuseppe M. Paternò
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli, 70/3, 20133 Milan, Italy;
| | - Stefano Dal Conte
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milan, Italy; (A.M.R.); (S.D.C.)
| | - Francesco Scotognella
- Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milan, Italy; (A.M.R.); (S.D.C.)
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli, 70/3, 20133 Milan, Italy;
| | - Eugenio Cinquanta
- Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, 20133 Milan, Italy;
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24
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Han Y, Han HJ, Rah Y, Kim C, Kim M, Lim H, Ahn KH, Jang H, Yu K, Kim TS, Cho EN, Jung YS. Desolvation-Triggered Versatile Transfer-Printing of Pure BN Films with Thermal-Optical Dual Functionality. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002099. [PMID: 33617118 DOI: 10.1002/adma.202002099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Revised: 06/21/2020] [Indexed: 06/12/2023]
Abstract
Although hexagonal boron nitride (BN) nanostructures have recently received significant attention due to their unique physical and chemical properties, their applications have been limited by a lack of processability and poor film quality. In this study, a versatile method to transfer-print high-quality BN films composed of densely stacked BN nanosheets based on a desolvation-induced adhesion switching (DIAS) mechanism is developed. It is shown that edge functionalization of BN sheets and rational selection of membrane surface energy combined with systematic control of solvation and desolvation status enable extensive tunability of interfacial interactions at BN-BN, BN-membrane, and BN-substrate boundaries. Therefore, without incorporating any additives in the BN film and applying any surface treatment on target substrates, DIAS achieves a near 100% transfer yield of pure BN films on diverse substrates, including substrates containing significant surface irregularities. The printed BNs demonstrate high optical transparency (>90%) and excellent thermal conductivity (>167 W m-1 K-1) for few-micrometer-thick films due to their dense and well-ordered microstructures. In addition to outstanding heat dissipation capability, substantial optical enhancement effects are confirmed for light-emitting, photoluminescent, and photovoltaic devices, demonstrating their remarkable promise for next-generation optoelectronic device platforms.
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Affiliation(s)
- Yujin Han
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hyeuk Jin Han
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Yoonhyuk Rah
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Cheolgyu Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Moohyum Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hunhee Lim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Kwang Ho Ahn
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Kyoungsik Yu
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Eugene N Cho
- KAIST Institute for NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
- KAIST Institute for NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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25
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Palombo Blascetta N, Liebel M, Lu X, Taniguchi T, Watanabe K, Efetov DK, van Hulst NF. Nanoscale Imaging and Control of Hexagonal Boron Nitride Single Photon Emitters by a Resonant Nanoantenna. NANO LETTERS 2020; 20:1992-1999. [PMID: 32053384 DOI: 10.1021/acs.nanolett.9b05268] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Defect centers in two-dimensional hexagonal boron nitride (hBN) are drawing attention as single-photon emitters with high photostability at room temperature. With their ultrahigh photon-stability, hBN single-photon emitters are promising for new applications in quantum technologies and for 2D-material based optoelectronics. Here, we control the emission rate of hBN-defects by coupling to resonant plasmonic nanocavities. By deterministic control of the antenna, we acquire high-resolution emission maps of the single hBN-defects. Using time-gating, we can discriminate the hBN-defect emission from the antenna luminescence. We observe sharp dips (40 nm fwhm) in emission, together with a reduction in luminescence lifetime. Comparing with finite-difference time-domain simulations, we conclude that both radiative and nonradiative rates are enhanced, effectively reducing the quantum efficiency. Also, the large refractive index of hBN largely screens off the local antenna field enhancement. Finally, based on the insight gained we propose a close-contact design for an order of magnitude brighter hBN single-photon emission.
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Affiliation(s)
- Nicola Palombo Blascetta
- ICFO - Institut de Ciences Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Matz Liebel
- ICFO - Institut de Ciences Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Xiaobo Lu
- ICFO - Institut de Ciences Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Dmitri K Efetov
- ICFO - Institut de Ciences Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Niek F van Hulst
- ICFO - Institut de Ciences Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA, Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
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26
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Kim S, Fröch JE, Gardner A, Li C, Aharonovich I, Solntsev AS. Second-harmonic generation in multilayer hexagonal boron nitride flakes. OPTICS LETTERS 2019; 44:5792-5795. [PMID: 31774781 DOI: 10.1364/ol.44.005792] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
In this Letter, we report the second-harmonic generation (SHG) from thick hexagonal boron nitride (hBN) flakes with approximately 109-111 layers. The resulting effective second-order susceptibility is similar to previously reported few-layer experiments. This confirms that thick hBN flakes can serve as a platform for nonlinear optics, which is useful because thick flakes are easy to exfoliate while retaining a large size. We also show spatial second-harmonic maps revealing that SHG remains a useful tool for the characterization of the layer structure, even in the case of a large number of layers.
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27
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Meng X, Liang F, Tang J, Kang K, Yin W, Zeng T, Kang B, Lin Z, Xia M. LiO4 tetrahedra lock the alignment of π-conjugated layers to maximize optical anisotropy in metal hydroisocyanurates. Inorg Chem Front 2019. [DOI: 10.1039/c9qi01047e] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
The “lock-in effect” of LiO4 tetrahedra contributes to the alignment of π-conjugated layers to maximize optical anisotropy in metal hydroisocyanurates.
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Affiliation(s)
- Xianghe Meng
- Beijing Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Fei Liang
- Beijing Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jian Tang
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- China
- Physics and Space Science College
| | - Kaijin Kang
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- China
- Physics and Space Science College
| | - Wenlong Yin
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- China
| | - Tixian Zeng
- Physics and Space Science College
- China West Normal University
- Nanchong 637002
- China
| | - Bin Kang
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- China
| | - Zheshuai Lin
- Beijing Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Mingjun Xia
- Beijing Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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