Semiconductor nanowires: A platform for nanoscience and nanotechnology

Active Micro-Nano-Collaborative Bioelectronic Device for Advanced Electrophysiological Recording

The development of precise and sensitive electrophysiological recording platforms holds the utmost importance for research in the fields of cardiology and neuroscience. In recent years, active micro/nano-bioelectronic devices have undergone significant advancements, thereby facilitating the study of electrophysiology. The distinctive configuration and exceptional functionality of these active micro-nano-collaborative bioelectronic devices offer the potential for the recording of high-fidelity action potential signals on a large scale. In this paper, we review three-dimensional active nano-transistors and planar active micro-transistors in terms of their applications in electro-excitable cells, focusing on the evaluation of the effects of active micro/nano-bioelectronic devices on electrophysiological signals. Looking forward to the possibilities, challenges, and wide prospects of active micro-nano-devices, we expect to advance their progress to satisfy the demands of theoretical investigations and medical implementations within the domains of cardiology and neuroscience research.

Self-Limiting Sub-5 nm Nanodiamonds by Geochemistry-Inspired Synthesis

Controlling diamond structures with nanometer precision is fundamentally challenging owing to their extreme and far-from-equilibrium synthetic conditions. State-of-the-art techniques, including detonation, chemical vapor deposition, mechanical grinding, and high-pressure-high-temperature synthesis, yield nanodiamond particles with a broad distribution of sizes. Despite many efforts, the direct synthesis of nanodiamonds with precisely controlled diameters remains elusive. Here the geochemistry-inspired synthesis of sub-5 nm nanodiamonds with sub-nanometer size deviation is described. High-pressure-high-temperature treatment of uniform iron carbide nanoparticles embedded in iron oxide matrices yields nanodiamonds with tunable diameters down to 2.13 and 0.22 nm standard deviation. A self-limiting, redox-driven, and diffusion-controlled solid-state reaction mechanism is proposed and supported by in situ X-ray diffraction, ex situ characterizations, and computational modeling. This work provides a unique mechanism for the precise control of nanostructured diamonds under extreme conditions and paves the road for the full realization of their potential in emerging technologies.

About the Shape of the Crystallization Front of the Semiconductor Nanowires

During the nanowire (NW) formation, the growth steps reaching the crystallization front (CF) under the catalytic drop are either absorbed by the three-phase line or accumulated in front of it, curving the surface of the front. In this paper, we have analyzed the conditions leading to a change of shape of the crystallization front of the NWs under the catalyst drop as well as the reasons for the formation of atomically smooth (singular) and curved (nonsingular) regions. A model explaining the curvature of the crystallization front under the drop in the process of NW growth is proposed. The model demonstrates that under conditions of good wettability of the crystalline surface with a catalytic liquid and nucleation at regular places of the growing NW face, a metastable equilibrium at the CF near the three-phase line is achieved due to the thermodynamic size effect of reduction of overcooling (supersaturation). This metastable equilibrium results in the curvature of the CF. The CF curvature depends on the NW radius and the level of overcooling (supersaturation) in the droplet. During this process, the low-index inclined facets adjacent to the wetting perimeter of the catalyst drop may appear on the curved CF.

Bending and punching characteristics of aluminum sheets using the quasi-continuum method

The nano-punching characteristics of single-crystalline aluminum are investigated using the quasi-continuum (QC) method. Four variables (i.e., crystal orientation, workpiece thickness, clearance between the punch and the substrate, and the taper angle of punch) are used to explore their effect during the nano-punching process. The shear stress distribution is used to express the punching effect on the punch and on both sides of the substrates. Besides, fracture strength, residual flash, and the atomic displacement vector are observed and discussed regarding the behaviors of the nano-punching process under various conditions. Based on the results, the Al workpiece with the X[111]Y[-110] orientation presents less lattice resistance during the punching process. Besides, the thickness of the workpiece has a significant effect on the punching quality. Workpieces with thickness values of 5 and 10 Å are more suitable for punching, due to stable loading and unloading stress-displacement curves and less residual flash on the cutting surfaces of these workpieces. In contrast, the effect of clearance has less impact on the punching behaviors of thinner workpieces. However, for thicker workpieces (i.e., 15 and 20 Å), a larger clearance will likely cause more residual flash. Furthermore, the taper angle of the punch should not be larger than 10°, otherwise, it might damage the workpiece and the substrate.

Lattice dynamics of Ge1-xSnx alloy nanowires

Alloying group IV semiconductors offers an effective way to engineer their electronic properties and lattice dynamics. The incorporation of Sn in Ge permits a transition from an indirect to a direct bandgap semiconductor. Here, by combining polarization, laser power-dependent and temperature-dependent micro-Raman spectroscopy we explore the full lattice dynamics of Ge_1-xSn_x (x = 0.01, 0.06 and 0.08) alloy nanowires. In the high Sn content samples (x ≥ 0.06), a low-frequency tail and a high-frequency shoulder are observed which are associated with the F_2g optical phonon mode of Ge (Ge-Ge mode). The new modes are assigned to the stretching of Ge-Ge bonds due to Sn-induced lattice relaxation and compression, respectively. The symmetry of the observed Raman modes has been studied by polarization-dependent Raman scattering. Nonlinear fitting of the laser power-dependent intensity of the high-frequency Ge-Ge mode in the Ge_1-xSn_x alloy nanowires with x = 0.06 and 0.08 suggests the activation of a third-order stimulated Raman scattering process, due to the high intensity localized electric field surrounding the Sn clusters. Finally, from the temperature-dependent Raman study, we have estimated the isobaric Grüneisen parameters for all the observed modes.

Fluorescent Biosensors Based on Silicon Nanowires

Nanostructures are arising as novel biosensing platforms promising to surpass current performance in terms of sensitivity, selectivity, and affordability of standard approaches. However, for several nanosensors, the material and synthesis used make the industrial transfer of such technologies complex. Silicon nanowires (NWs) are compatible with Si-based flat architecture fabrication and arise as a hopeful solution to couple their interesting physical properties and surface-to-volume ratio to an easy commercial transfer. Among all the transduction methods, fluorescent probes and sensors emerge as some of the most used approaches thanks to their easy data interpretation, measure affordability, and real-time in situ analysis. In fluorescent sensors, Si NWs are employed as substrate and coupled with several fluorophores, NWs can be used as quenchers in stem-loop configuration, and have recently been used for direct fluorescent sensing. In this review, an overview on fluorescent sensors based on Si NWs is presented, analyzing the literature of the field and highlighting the advantages and drawbacks for each strategy.

In-Cell Nanoelectronics: Opening the Door to Intracellular Electrophysiology

Establishing a reliable electrophysiological recording platform is crucial for cardiology and neuroscience research. Noninvasive and label-free planar multitransistors and multielectrode arrays are conducive to perform the large-scale cellular electrical activity recordings, but the signal attenuation limits these extracellular devices to record subthreshold activities. In recent decade, in-cell nanoelectronics have been rapidly developed to open the door to intracellular electrophysiology. With the unique three-dimensional nanotopography and advanced penetration strategies, high-throughput and high-fidelity action potential like signal recordings is expected to be realized. This review summarizes in-cell nanoelectronics from versatile nano-biointerfaces, penetration strategies, active/passive nanodevices, systematically analyses the applications in electrogenic cells and especially evaluates the influence of nanodevices on the high-quality intracellular electrophysiological signals. Further, the opportunities, challenges and broad prospects of in-cell nanoelectronics are prospected, expecting to promote the development of in-cell electrophysiological platforms to meet the demand of theoretical investigation and clinical application.

Growth of long III-As NWs by hydride vapor phase epitaxy

In this review paper, we focus on the contribution of hydride vapor phase epitaxy (HVPE) to the growth of III-As nanowires (NWs). HVPE is the third epitaxial technique involving gaseous precursors together with molecular beam epitaxy (MBE) and metal-organic VPE (MOVPE) to grow III-V semiconductor compounds. Although a pioneer in the growth of III-V epilayers, HVPE arrived on the scene of NW growth the very last. Yet, HVPE brought different and interesting insights to the topic since HVPE is a very reactive growth system, exhibiting fast growth property, while growth is governed by the temperature-dependent kinetics of surface mechanisms. After a brief review of the specific attributes of HVPE growth, we first feature the innovative polytypism-free crystalline quality of cubic GaAs NWs grown by Au-assisted vapor-liquid-solid (VLS) epitaxy, on exceptional length and for radii down to 6 nm. We then move to the integration of III-V NWs with silicon. Special emphasis is placed on the nucleation issue experienced by both Au-assisted VLS MOVPE and HVPE, and a model demonstrates that the presence of Si atoms in the liquid droplets suppresses nucleation of NWs unless a high Ga concentation is reached in the catalyst droplet. The second known issue is the amphoteric behavior of Si when it is used as doping element for GaAs. On the basis of compared MBE and HVPE experimental data, a model puts forward the role of the As concentration in the liquid Au-Ga-As-Si droplets to yield p-type (low As content) or n-type (high As content) GaAs:Si NWs. We finally describe how self-catalysed VLS growth and condensation growth are implemented by HVPE for the growth of GaAs and InAs NWs on Si.

Phase-coherent transport in trigonal gallium nitride nanowires

Gallium nitride nanowires (GaN NWs) with triangular cross-section exhibit universal conductance fluctuations (UCF) originating from the quantum interference of electron wave functions in the NWs. The amplitude of UCF is inversely proportional to the applied bias current. The bias dependence of UCF, combined with temperature dependence of the resistance suggests that phase coherent transport dominates over normal transport in GaN NWs. A unique temperature dependence of phase-coherent length and fluctuation amplitude is associated with inelastic electron-electron scattering in NWs. The phase-coherence length extracted from the UCF is as large as 400 nm at 1.8 K, and gradually decreases as temperature increases up to 60 K.

Photodetecting properties of single CuO-ZnO core-shell nanowires with p-n radial heterojunction

CuO-ZnO core-shell radial heterojunction nanowire arrays were obtained by a simple route which implies two cost-effective methods: thermal oxidation in air for preparing CuO nanowire arrays, acting as a p-type core and RF magnetron sputtering for coating the surface of the CuO nanowires with a ZnO thin film, acting as a n-type shell. The morphological, structural, optical and compositional properties of the CuO-ZnO core-shell nanowire arrays were investigated. In order to analyse the electrical and photoelectrical properties of the metal oxide nanowires, single CuO and CuO-ZnO core-shell nanowires were contacted by employing electron beam lithography (EBL) and focused ion beam induced deposition (FIBID). The photoelectrical properties emphasize that the p-n radial heterojunction diodes based on single CuO-ZnO core-shell nanowires behave as photodetectors, evidencing a time-depending photoresponse under illumination at 520 nm and 405 nm wavelengths. The performance of the photodetector device was evaluated by assessing its key parameters: responsivity, external quantum efficiency and detectivity. The results highlighted that the obtained CuO-ZnO core-shell nanowires are emerging as potential building blocks for a next generation of photodetector devices.

Engineering the Microstructure of Silicon Nanowires by Controlling the Shape of the Metal Catalyst and Composition of the Etchant in a Two-Step MACE Process: An In-Depth Analysis of the Growth Mechanism

In this work, slanted, kinked, and straight silicon nanowires (SiNWs) are fabricated on Si(111) and (100) substrates using a facile two-step metal-assisted chemical etching nanofabrication technique. We systematically investigated the effect of crystallography, morphology of Ag catalyst, and composition of etchant on the etch profile of Ag catalyst on Si(111) and (100) substrates. We found that the movement of AgNPs inside the Si is determined by physiochemical events such as Ag/Ag interaction, Ag/Si contact, and diffusion kinetics. Further, from detailed TEM and micro-Raman spectroscopy analyses, we demonstrate that the metal catalyst moves in the crystallographically preferred etching direction (viz., <100>) only when the interface effect is not predominant. Further, the metal-assisted chemical etching (MACE) system is highly stable at low-concentration plating and etching solutions, but at high concentrations, the system loses its stability and becomes highly random, leading to the movement of Ag catalyst in directions other than ⟨100⟩. In addition, our studies reveal that Ag nanostructures growth on Si(111) and (100) substrates through galvanic displacement is controlled by substrate symmetry and surface bond density. Finally, we demonstrate that by using an optimized balance between the Ag morphology and concentration of the etchant, the angle in slanted SiNWs, kink position in kinked SiNWs, and aspect ratio of straight SiNWs can be controlled judiciously, leading to enhanced optical absorption in the broadband solar spectrum.

Probing dipole and quadrupole resonance mode in non-plasmonic nanowire using Raman spectroscopy

Electric field enhancement in semiconductor nanostructures offers a possibility to find an alternative to the metallic particles which is well known for tuning the light-matter interaction due to its strong polarizability and size-dependent surface plasmon resonance energy. Raman spectroscopy is a powerful technique to monitor the electric field as its scattering depends on the electromagnetic eigenmode of the particle. Here, we observe enhanced polarized Raman scattering from germanium nanowires of different diameters. The incident electromagnetic radiation creates a distribution of the internal electric field inside the naowires which can be enhanced by manipulating the nanowire diameter, the incident electric field and its polarization. Our estimation of the enhancement factor, including its dependence on nanowire diameter, agrees well with the Mie theory for an infinite cylinder. Furthermore, depending on diameter of nanowire and wavelength of incident radiation, polarized Raman study shows dipolar (antenna effect) and quadrupolar resonances, which has never been observed in germanium nanowire. We attempt to understand this polarized Raman behavior using COMSOL Multiphysics simulation, which suggests that the pattern observed is due to photon confinement within the nanowires. Thus, the light scattering direction can be toggled by tuning the polarization of incident excitation and diameter of non plasmonic nanowire.

Selective Growth of Stacking Fault Free ⟨100⟩ Nanowires on a Polycrystalline Substrate for Energy Conversion Application

Cubic semiconductor nanowires grown along ⟨100⟩ directions have been reported to be promising for optoelectronics and energy conversion applications, owing to their pure zinc-blende structure without any stacking fault. But, until date, only limited success has been achieved in growing ⟨100⟩ oriented nanowires. Here we report the selective growth of stacking fault free ⟨100⟩ nanowires on a commercial transparent conductive polycrystalline fluorine-doped SnO₂ (FTO) glass substrate via a simple and cost-effective chemical vapor deposition (CVD) method. By means of crystallographic analysis and density functional theory calculation, we prove that the orientation relationship between the Au catalyst and the FTO substrate play a vital role in inducing the selective growth of ⟨100⟩ nanowires, which opens a new pathway for controlling the growth directions of nanowires via the elaborate selection of the catalyst and substrate couples during the vapor-solid-liquid (VLS) growth process. The ZnSe nanowires grown on the FTO substrate are further applied as a photoanode in photoelectrochemical (PEC) water splitting. It exhibits a higher photocurrent than the ZnSe nanowires do without preferential orientations on a Sn-doped In₂O₃ (ITO) glass substrate, which we believe to be correlated with the smooth transport of charge carriers in ZnSe ⟨100⟩ nanowires with pure zinc-blende structures, in distinct contrast with the severe electron scattering happened at the stacking faults in ZnSe nanowires on the ITO substrate, as well as the efficient charge transfer across the intensively interacting nanowire-substrate interfaces.

Surface softening regulates size-dependent stiffness of diamond nanowires

Diamond nanowires (NWs) belong to an important class of nanoscale materials for their outstanding potential in mechanical, electrical, and thermal applications. However, their mechanical behavior under pristine and defective conditions remains less understood. This paper reveals a comprehensive understanding of the effective elastic behavior of diamond NWs, and it uncovers surface-softening as the dominant mechanism that regulates their effective behavior. We applied the force-based and energy-based approaches and constructed a comparative analysis to reveal the atomistic basis behind the diameter-dependent elastic properties of the nanowires. Our findings suggest the energy-based approach to produce physically meaningful results, whereas the widely used force-based scheme produces inconsistent size-dependent behavior. Results show that, with increasing diameter, the softening of the surface and the defective regimes decreases. As a direct consequence of the alteration in the softening state, the first-order elastic modulus increases with increasing diameter, whereas the second-order modulus decreases. Also, vacancy defects, even in very dilute concentrations, are found to substantially affect the elastic behavior of the nanowire. Furthermore, surface, core, and defective regimes exhibit very different roles in nanowires of different diameters: the surface regime acts as a softer regime and the core as stiffer, regardless of the diameter. Their cumulative effect is however dominated by the surface in smaller-diameter nanowire-but in wider diameter nanowires it is dominated by the core. As a result, the size-dependent behavior is strictly controlled by the softening state of the surface. The diameter-dependent elastic moduli show a power-law relation, which deviates substantially from the simple surface-to-volume ratio. These findings suggest surface-engineering as an important tool for modulating the effective behavior of brittle nanowires.

Superlocalization of Excitons in Carbon Nanotubes at Cryogenic Temperature

At cryogenic temperature and at the single emitter level, the optical properties of single-wall carbon nanotubes depart drastically from that of a one-dimensional (1D) object. In fact, the (usually unintentional) localization of excitons in local potential wells leads to nearly 0D behaviors such as photon antibunching, spectral diffusion, inhomogeneous broadening, etc. Here, we present a hyperspectral imaging of this spontaneous exciton localization effect at the single nanotube level using a super-resolved optical microscopy approach. We report on the statistical distribution of the trap localization, depth, and width. We use a quasi-resonant photoluminescence excitation approach to probe the confined quantum states. Numerical simulations of the quantum states and exciton diffusion show that the excitonic states are deeply modified by the interface disorder inducing a remarkable discretization of the excitonic absorption spectrum and a quenching of the free 1D exciton absorption.

Nanowired Bioelectric Interfaces

Biological systems have evolved biochemical, electrical, mechanical, and genetic networks to perform essential functions across various length and time scales. High-aspect-ratio biological nanowires, such as bacterial pili and neurites, mediate many of the interactions and homeostasis in and between these networks. Synthetic materials designed to mimic the structure of biological nanowires could also incorporate similar functional properties, and exploiting this structure-function relationship has already proved fruitful in designing biointerfaces. Semiconductor nanowires are a particularly promising class of synthetic nanowires for biointerfaces, given (1) their unique optical and electronic properties and (2) their high degree of synthetic control and versatility. These characteristics enable fabrication of a variety of electronic and photonic nanowire devices, allowing for the formation of well-defined, functional bioelectric interfaces at the biomolecular level to the whole-organ level. In this Focus Review, we first discuss the history of bioelectric interfaces with semiconductor nanowires. We next highlight several important, endogenous biological nanowires and use these as a framework to categorize semiconductor nanowire-based biointerfaces. Within this framework we then review the fundamentals of bioelectric interfaces with semiconductor nanowires and comment on both material choice and device design to form biointerfaces spanning multiple length scales. We conclude with a discussion of areas with the potential for greatest impact using semiconductor nanowire-enabled biointerfaces in the future.

Deterministic Assembly of Three-Dimensional Suspended Nanowire Structures

Controlled assembly of nanowire three-dimensional (3D) geometry in an addressable way can lead to advanced 3D device integration and application. By combining a deterministic planar nanowire assembly and a transfer process, we show here a versatile method to construct vertically protruding and suspending nanowire structures. The method harnesses the merits from both processes to yield positional and geometric control in individual nanowires. Multiple transfers can further lead to hierarchical multiwire 3D structures. Assembled 3D nanowire structures have well-defined on-substrate terminals that allow scalable addressing and integration. Proof-of-concept nanosenors based on assembled 3D nanowire structures can achieve high sensitivity in force detection.

Phonon-Assisted Electro-Optical Switches and Logic Gates Based on Semiconductor Nanostructures

High-performance nanostructured electro-optical switches and logic gates are highly desirable as essential building blocks in integrated photonics. In contrast to silicon-based optoelectronic devices, with their inherent indirect optical bandgap, weak light-modulation mechanism, and sophisticated device configuration, direct-bandgap-semiconductor nanostructures with attractive electro-optical properties are promising candidates for the construction of nanoscale optical switches for on-chip photonic integrations. However, previously reported semiconductor-nanostructure optical switches suffer from serious drawbacks such as high drive voltage, limited operation spectral range, and low modulation depth. High-efficiency electro-optical switches based on single CdS nanobelts with low drive voltage, ultra-high on/off ratio, and broad operation wavelength range, properties resulting from unique electric-field-dependent phonon-assisted optical transitions, are demonstrated. Furthermore, functional NOT, NOR, and NAND optical logic gates are demonstrated based on these switches. These switches and optical logic gates represent an important step toward integrated photonic circuits.

Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.

Interplay of Surface Recombination and Diode Geometry for the Performance of Axial p-i-n Nanowire Solar Cells

Nanowires (NWs) with axial p-i-n junctions have been widely explored as microscopic diodes for optoelectronic and solar energy applications, and their performance is strongly influenced by charge recombination at the surface. We delineate how the photovoltaic performance of these diodes is dictated not only by the surface but also by the complex and seemingly counterintuitive interplay of diode geometry, that is, radius ( R) and intrinsic length ( L_i), with the surface recombination velocity ( S). An analytical model to describe these relationships is developed and compared to finite-element simulations, which verify the accuracy and limitations of the model. The dependence of the dark saturation current ( I₀), internal quantum efficiency (IQE), short-circuit current ( I_SC), and open-circuit voltage ( V_OC) on both geometric and recombination parameters demonstrates that no single set of parameters produces optimal performance; instead, various trade-offs in performance are observed. For instance, longer L_i might be expected to produce higher I_SC, yet at high values of S the I_SC declines because of decreases in IQE. Moreover, longer L_i produces a concurrent decline in V_OC regardless of S due to increases in I₀. We also find that I_SC and V_OC trends are radius independent, yet I₀ is directly proportional to R, causing NWs with smaller R to display higher turn-on voltages. The analysis regarding the interplay of these parameters, verified by experimental measurements with various p-i-n geometries and surface treatments, provides clear guidance for the rational design of performance metrics for photodiode and photovoltaic devices.

In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale

In situ transmission electron microscopy investigation of structural transformation in III-V nanowires is essential for providing direct insight into the structural stability of III-V nanowires under elevated temperature. In this study, through in situ heating investigation in a transmission electron microscope, the detailed structural transformation of InAs nanowires from wurtzite structure to zinc-blende structure at the catalyst/nanowire interface is witnessed on the atomic level. Through detailed structural and dynamic analysis, it was found that the nucleation site of each new layer of InAs and catalyst surface energy play a decisive role in the growth of the zinc-blende structure. This study provides new insights into the growth mechanism of zinc-blende-structured III-V nanowires.

The evolution of artificial light actuators in living systems: from planar to nanostructured interfaces

Artificially enhancing light sensitivity in living cells allows control of neuronal paths or vital functions avoiding the wiring associated with the use of stimulation electrodes. Many possible strategies can be adopted for reaching this goal, including the direct photoexcitation of biological matter, the genetic modification of cells or the use of opto-bio interfaces. In this review we describe different light actuators based on both inorganic and organic semiconductors, from planar abiotic/biotic interfaces to nanoparticles, that allow transduction of a light signal into a signal which in turn affects the biological activity of the hosting system. In particular, we will focus on the application of thiophene-based materials which, thanks to their unique chemical-physical properties, geometrical adaptability, great biocompatibility and stability, have allowed the development of a new generation of fully organic light actuators for in vivo applications.

High-Quality In-Plane Aligned CsPbX3 Perovskite Nanowire Lasers with Composition-Dependent Strong Exciton-Photon Coupling

Cesium lead halide perovskite nanowires have emerged as promising low-dimensional semiconductor structures for integrated photonic applications. Understanding light-matter interactions in a nanowire cavity is of both fundamental and practical interest in designing low-power-consumption nanoscale light sources. In this work, high-quality in-plane aligned halide perovskite CsPbX₃ (X = Cl, Br, I) nanowires are synthesized by a vapor growth method on an annealed M-plane sapphire substrate. Large-area nanowire laser arrays have been achieved based on the as-grown aligned CsPbX₃ nanowires at room temperature with quite low pumping thresholds, very high quality factors, and a high degree of linear polarization. More importantly, it is found that exciton-polaritons are formed in the nanowires under the excitation of a pulsed laser, indicating a strong exciton-photon coupling in the optical microcavities made of cesium lead halide perovskites. The coupling strength in these CsPbX₃ nanowires is dependent on the atomic composition, where the obtained room-temperature Rabi splitting energy is ∼210 ± 13, 146 ± 9, and 103 ± 5 meV for the CsPbCl₃, CsPbBr₃, and CsPbI₃ nanowires, respectively. This work provides fundamental insights for the practical applications of all-inorganic perovskite CsPbX₃ nanowires in designing light-emitting devices and integrated nanophotonic systems.

Long-range surface plasmon polariton detection with a graphene photodetector

We present an integration of a single Ag nanowire (NW) with a graphene photodetector and demonstrate an efficient and compact detection of long-range surface plasmon polaritons (SPPs). Atomically thin graphene provides an ideal platform to detect the evanescent electric field of SPPs extremely bound at the interface of the Ag NW and glass substrate. Scanning photocurrent microscopy directly visualizes a polarization-dependent excitation and detects the SPPs. The SPP detection responsivity is readily controlled up to ∼17  mA/W by the drain-source voltage. We believe that the graphene SPP detector will be a promising building block for highly integrated photonic and optoelectronic circuits.

Fluidic Microactuation of Flexible Electrodes for Neural Recording

Soft and conductive nanomaterials like carbon nanotubes, graphene, and nanowire scaffolds have expanded the family of ultraflexible microelectrodes that can bend and flex with the natural movement of the brain, reduce the inflammatory response, and improve the stability of long-term neural recordings. However, current methods to implant these highly flexible electrodes rely on temporary stiffening agents that temporarily increase the electrode size and stiffness thus aggravating neural damage during implantation, which can lead to cell loss and glial activation that persists even after the stiffening agents are removed or dissolve. A method to deliver thin, ultraflexible electrodes deep into neural tissue without increasing the stiffness or size of the electrodes will enable minimally invasive electrical recordings from within the brain. Here we show that specially designed microfluidic devices can apply a tension force to ultraflexible electrodes that prevents buckling without increasing the thickness or stiffness of the electrode during implantation. Additionally, these "fluidic microdrives" allow us to precisely actuate the electrode position with micron-scale accuracy. To demonstrate the efficacy of our fluidic microdrives, we used them to actuate highly flexible carbon nanotube fiber (CNTf) microelectrodes for electrophysiology. We used this approach in three proof-of-concept experiments. First, we recorded compound action potentials in a soft model organism, the small cnidarian Hydra. Second, we targeted electrodes precisely to the thalamic reticular nucleus in brain slices and recorded spontaneous and optogenetically evoked extracellular action potentials. Finally, we inserted electrodes more than 4 mm deep into the brain of rats and detected spontaneous individual unit activity in both cortical and subcortical regions. Compared to syringe injection, fluidic microdrives do not penetrate the brain and prevent changes in intracranial pressure by diverting fluid away from the implantation site during insertion and actuation. Overall, the fluidic microdrive technology provides a robust new method to implant and actuate ultraflexible neural electrodes.

Effects of Defects on the Mechanical Properties of Kinked Silicon Nanowires

Kinked silicon nanowires (KSiNWs) have many special properties that make them attractive for a number of applications. The mechanical properties of KSiNWs play important roles in the performance of sensors. In this work, the effects of defects on the mechanical properties of KSiNWs are studied using molecular dynamics simulations and indirectly validated by experiments. It is found that kinks are weak points in the nanowire (NW) because of inharmonious deformation, resulting in a smaller elastic modulus than that of straight NWs. In addition, surface defects have more significant effects on the mechanical properties of KSiNWs than internal defects. The effects of the width or the diameter of the defects are larger than those of the length of the defects. Overall, the elastic modulus of KSiNWs is not sensitive to defects; therefore, KSiNWs have a great potential as strain or stress sensors in special applications.

Oxygen evolution reaction dynamics monitored by an individual nanosheet-based electronic circuit

The oxygen evolution reaction involves complex interplay among electrolyte, solid catalyst, and gas-phase and liquid-phase reactants and products. Monitoring catalysis interfaces between catalyst and electrolyte can provide valuable insights into catalytic ability. But it is a challenging task due to the additive solid supports in traditional measurement. Here we design a nanodevice platform and combine on-chip electrochemical impedance spectroscopy measurement, temporary I-V measurement of an individual nanosheet, and molecular dynamic calculations to provide a direct way for nanoscale catalytic diagnosis. By removing O₂ in electrolyte, a dramatic decrease in Tafel slope of over 20% and early onset potential of 1.344 V vs. reversible hydrogen electrode are achieved. Our studies reveal that O₂ reduces hydroxyl ion density at catalyst interface, resulting in poor kinetics and negative catalytic performance. The obtained in-depth understanding could provide valuable clues for catalysis system design. Our method could also be useful to analyze other catalytic processes.

Electrocatalysis offers important opportunities for clean fuel production, but uncovering the chemistry at the electrode surface remains a challenge. Here, the authors exploit a single-nanosheet electrode to perform in-situ measurements of water oxidation electrocatalysis and reveal a crucial interaction with oxygen.

Spatially localized wavelength-selective absorption in morphology-modulated semiconductor nanowires

In this study, we proposed morphology-modulated Si nanowires (NWs) with a hexagonal cross-section and numerically investigated their resonant optical absorption and scattering properties. The calculated absorption and scattering efficiency spectra of the NWs exhibited optical resonances that could be controlled by tuning the aspect ratio (AR) of the NW cross-sectional shapes. The spectra also revealed interesting spectral behaviors including resonant peak shifts in the absorption spectrum and asymmetric line shapes in the scattering spectrum. To achieve spatially confined and wavelength-selective light absorption, we periodically modulated the geometry of the diameter in a single NW by combining two different ARs; we call these "diameter-modulated NWs." We designed various diameter-modulated NWs with short and long pitch sizes, and we observed unique and interesting features in the optical resonance and corresponding light absorption spectra such as grating modes and three-dimensional cavity modes. The proposed diameter-modulated NWs can be promising building blocks for the nanoscale localized light absorption and detection in compact nanophotonic integrated circuits.

Features of electron gas in InAs nanowires imposed by interplay between nanowire geometry, doping and surface states

We present a study of electron gas properties in InAs nanowires determined by interaction between nanowire geometry, doping and surface states. The electron gas density and space distribution are calculated via self-consistent solution of coupled Schroedinger and Poisson equations in the nanowires with a hexagonal cross-section. We show that the density of surface states and the nanowire width define the spatial distribution of the electrons. Three configurations can be distinguished, namely the electrons are localized in the center of the wire, or they are arranged in a uniform tubular distribution, or finally in a tubular distribution with additional electron accumulation at the corners of the nanowire. The latter one is dominating for most experimentally obtained nanowires. N-type doping partly suppresses electron accumulation at the nanowire corners. The electron density calculated for both, various nanowire widths and different positions of the Fermi level at the nanowire surface, is compared with the experimental data for intrinsic InAs nanowires. Suitable agreement is obtained by assuming a Fermi level pinning at 60 to 100 meV above the conduction band edge, leading to a tubular electron distribution with accumulation along the corners of the nanowire.

Metal Oxide Nanowire Preparation and Their Integration into Chemical Sensing Devices at the SENSOR Lab in Brescia

Metal oxide 1D nanowires are probably the most promising structures to develop cheap stable and selective chemical sensors. The purpose of this contribution is to review almost two-decades of research activity at the Sensor Lab Brescia on their preparation during by vapor solid (n-type In₂O₃, ZnO), vapor liquid solid (n-type SnO₂ and p-type NiO) and thermal evaporation and oxidation (n-type ZnO, WO₃ and p-type CuO) methods. For each material we've assessed the chemical sensing performance in relation to the preparation conditions and established a rank in the detection of environmental and industrial pollutants: SnO₂ nanowires were effective in DMMP detection, ZnO nanowires in NO₂, acetone and ethanol detection, WO₃ for ammonia and CuO for ozone.

Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer

The electrical performance of TiO₂ nanorod array (NRA)-based resistive switching memory devices is examined in this paper. The formation of a seed layer on the fluorine-doped tin oxide (FTO) glass substrate after treatment in TiCl₄ solution, before the growth of TiO₂ NRAs on the FTO substrate via a hydrothermal process, is shown to significantly improve the resistive switching performance of the resulting TiO₂ NRA-based device. As fabricated, the Al/TiO₂ NRA/TiO_x layer/FTO device displayed electroforming-free bipolar resistive switching behavior while maintaining a stable ON/OFF ratio for more than 500 direct sweeping cycles over a retention period of 3 × 10⁴ s. Meanwhile, the programming current as low as ∼10^-8 A and 10^-10 A for low resistance state and high resistance state respectively makes the fabricated devices suitable for low-power memristor applications. The TiO_x precursor seed layer not only promotes the uniform and preferred growth of TiO₂ nanorods on the FTO substrate but also functions as an additional source layer of trap centers due to its oxygen-deficient composition. Our data suggest that the primary conduction mechanism in these devices arises from trap-mediated space-charge-limited current (SCLC). Multilevel memory performance in this new device is achieved by varying the SET voltage. The origin of this effect is also discussed.

Controlling Kink Geometry in Nanowires Fabricated by Alternating Metal-Assisted Chemical Etching

Kinked silicon (Si) nanowires (NWs) have many special properties that make them attractive for a number of applications, such as microfluidics devices, microelectronic devices, and biosensors. However, fabricating NWs with controlled three-dimensional (3D) geometry has been challenging. In this work, a novel method called alternating metal-assisted chemical etching is reported for the fabrication of kinked Si NWs with controlled 3D geometry. By the use of multiple etchants with carefully selected composition, one can control the number of kinks, their locations, and their angles by controlling the number of etchant alternations and the time in each etchant. The resulting number of kinks equals the number times the etchant is alternated, the length of each segment separated by kinks has a linear relationship with the etching time, and the kinking angle is related to the surface tension and viscosity of the etchants. This facile method may provide a feasible and economical way to fabricate novel silicon nanowires, nanostructures, and devices for broad applications.

Earth Abundant Fe/Mn-Based Layered Oxide Interconnected Nanowires for Advanced K-Ion Full Batteries

K-ion battery (KIB) is a new-type energy storage device that possesses potential advantages of low-cost and abundant resource of K precursor materials. However, the main challenge lies on the lack of stable materials to accommodate the intercalation of large-size K-ions. Here we designed and constructed a novel earth abundant Fe/Mn-based layered oxide interconnected nanowires as a cathode in KIBs for the first time, which exhibits both high capacity and good cycling stability. On the basis of advanced in situ X-ray diffraction analysis and electrochemical characterization, we confirm that interconnected K_0.7Fe_0.5Mn_0.5O₂ nanowires can provide stable framework structure, fast K-ion diffusion channels, and three-dimensional electron transport network during the depotassiation/potassiation processes. As a result, a considerable initial discharge capacity of 178 mAh g^-1 is achieved when measured for KIBs. Besides, K-ion full batteries based on interconnected K_0.7Fe_0.5Mn_0.5O₂ nanowires/soft carbon are assembled, manifesting over 250 cycles with a capacity retention of ∼76%. This work may open up the investigation of high-performance K-ion intercalated earth abundant layered cathodes and will push the development of energy storage systems.

Advances in nanowire bioelectronics

Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.

Capillarity-Driven Welding of Semiconductor Nanowires for Crystalline and Electrically Ohmic Junctions

Semiconductor nanowires (NWs) have been demonstrated as a potential platform for a wide-range of technologies, yet a method to interconnect functionally encoded NWs has remained a challenge. Here, we report a simple capillarity-driven and self-limited welding process that forms mechanically robust and Ohmic inter-NW connections. The process occurs at the point-of-contact between two NWs at temperatures 400-600 °C below the bulk melting point of the semiconductor. It can be explained by capillarity-driven surface diffusion, inducing a localized geometrical rearrangement that reduces spatial curvature. The resulting weld comprises two fused NWs separated by a single, Ohmic grain boundary. We expect the welding mechanism to be generic for all types of NWs and to enable the development of complex interconnected networks for neuromorphic computation, battery and solar cell electrodes, and bioelectronic scaffolds.

Encoding Active Device Elements at Nanowire Tips

Semiconductor nanowires and other one-dimensional materials are attractive for highly sensitive and spatially confined electrical and optical signal detection in biological and physical systems, although it has been difficult to localize active electronic or optoelectronic device function at one end of such one-dimensional structures. Here we report a new nanowire structure in which the material and dopant are modulated specifically at only one end of nanowires to encode an active two-terminal device element. We present a general bottom-up synthetic scheme for these tip-modulated nanowires and illustrate this with the synthesis of nanoscale p-n junctions. Electron microscopy imaging verifies the designed p-Si nanowire core with SiO2 insulating inner shell and n-Si outer shell with clean p-Si/n-Si tip junction. Electrical transport measurements with independent contacts to the p-Si core and n-Si shell exhibited a current rectification behavior through the tip and no detectable current through the SiO2 shell. Electrical measurements also exhibited an n-type response in conductance versus water-gate voltage with pulsed gate experiments yielding a temporal resolution of at least 0.1 ms and ∼90% device sensitivity localized to within 0.5 μm from the nanowire p-n tip. In addition, photocurrent experiments showed an open-circuit voltage of 0.75 V at illumination power of ∼28.1 μW, exhibited linear dependence of photocurrent with respect to incident illumination power with an estimated responsivity up to ∼0.22 A/W, and revealed localized photocurrent generation at the nanowire tip. The tip-modulated concept was further extended to a top-down/bottom-up hybrid approach that enabled large-scale production of vertical tip-modulated nanowires with a final synthetic yield of >75% with >4300 nanowires. Vertical tip-modulated nanowires were fabricated into >50 individually addressable nanowire device arrays showing diode-like current-voltage characteristics. These tip-modulated nanowire devices provide substantial opportunity in areas ranging from biological and chemical sensing to optoelectronic signal and nanoscale photodetection.

Oriented Growth of Pb1- x Snx Te Nanowire Arrays for Integration of Flexible Infrared Detectors

Assembling nanowires into highly ordered arrays is crucial for developing integration circuits. Oriented growth of mid-infrared Pb1- x Snx Te nanowire arrays on bendable mica, extending the function of existing nanowire arrays, is reported. The flexible photodetectors of these nanowire arrays show a high photoresponsivity of 276 A W(-1) (at 800 nm), which is higher than many previously reported infrared nanosensors.

Plateau-Rayleigh Crystal Growth of Nanowire Heterostructures: Strain-Modified Surface Chemistry and Morphological Control in One, Two, and Three Dimensions

One-dimensional (1D) structures offer unique opportunities for materials synthesis since crystal phases and morphologies that are difficult or impossible to achieve in macroscopic crystals can be synthesized as 1D nanowires (NWs). Recently, we demonstrated one such phenomenon unique to growth on a 1D substrate, termed Plateau-Rayleigh (P-R) crystal growth, where periodic shells develop along a NW core to form diameter-modulated NW homostructures with tunable morphologies. Here we report a novel extension of the P-R crystal growth concept with the synthesis of heterostructures in which Ge (Si) is deposited on Si (Ge) 1D cores to generate complex NW morphologies in 1, 2, or 3D. Depositing Ge on 50 nm Si cores with a constant GeH4 pressure yields a single set of periodic shells, while sequential variation of GeH4 pressure can yield multimodulated 1D NWs with two distinct sets of shell periodicities. P-R crystal growth on 30 nm cores also produces 2D loop structures, where Ge (Si) shells lie primarily on the outside (inside) of a highly curved Si (Ge) core. Systematic investigation of shell morphology as a function of growth time indicates that Ge shells grow in length along positive curvature Si cores faster than along straight Si cores by an order of magnitude. Short Ge deposition times reveal that shells develop on opposite sides of 50 and 100 nm Si cores to form straight 1D morphologies but that shells develop on the same side of 20 nm cores to produce 2D loop and 3D spring structures. These results suggest that strain mediates the formation of 2 and 3D morphologies by altering the NW's surface chemistry and that surface diffusion of heteroatoms on flexible freestanding 1D substrates can facilitate this strain-mediated mechanism.

Nanoimaging in cardiovascular diseases: Current state of the art

Nanotechnology has been integrated into healthcare system in terms of diagnosis as well as therapy. The massive impact of imaging nanotechnology has a deeper intervention in cardiology i.e. as contrast agents, to target vulnerable plaques with site specificity and in a theranostic approach to treat these plaques, stem cell delivery in necrotic myocardium, etc. Thus cardiovascular nanoimaging is not limited to simple diagnosis but also can help real time tracking during therapy as well as surgery. The present review provides a comprehensive description of the molecular imaging techniques for cardiovascular diseases with the help of nanotechnology and the potential clinical implications of nanotechnology for future applications.

Nano-Bioelectronics

Nano-bioelectronics represents a rapidly expanding interdisciplinary field that combines nanomaterials with biology and electronics and, in so doing, offers the potential to overcome existing challenges in bioelectronics. In particular, shrinking electronic transducer dimensions to the nanoscale and making their properties appear more biological can yield significant improvements in the sensitivity and biocompatibility and thereby open up opportunities in fundamental biology and healthcare. This review emphasizes recent advances in nano-bioelectronics enabled with semiconductor nanostructures, including silicon nanowires, carbon nanotubes, and graphene. First, the synthesis and electrical properties of these nanomaterials are discussed in the context of bioelectronics. Second, affinity-based nano-bioelectronic sensors for highly sensitive analysis of biomolecules are reviewed. In these studies, semiconductor nanostructures as transistor-based biosensors are discussed from fundamental device behavior through sensing applications and future challenges. Third, the complex interface between nanoelectronics and living biological systems, from single cells to live animals, is reviewed. This discussion focuses on representative advances in electrophysiology enabled using semiconductor nanostructures and their nanoelectronic devices for cellular measurements through emerging work where arrays of nanoelectronic devices are incorporated within three-dimensional cell networks that define synthetic and natural tissues. Last, some challenges and exciting future opportunities are discussed.

Determining the Time Window for Dynamic Nanowire Cell Penetration Processes

Nanowire (NW) arrays offer opportunities for parallel, nondestructive intracellular access for biomolecule delivery, intracellular recording, and sensing. Spontaneous cell membrane penetration by vertical nanowires is essential for these applications, yet the time- and geometry-dependent penetration process is still poorly understood. In this work, the dynamic NW-cell interface during cell spreading was examined through experimental cell penetration measurements combined with two mechanical models based on substrate adhesion force or cell traction forces. Penetration was determined by comparing the induced tension at a series of given membrane configurations to the critical membrane failure tension. The adhesion model predicts that penetration occurs within a finite window shortly after initial cell contact and adhesion, while the traction model predicts increasing penetration over a longer period. NW penetration rates determined from a cobalt ion delivery assay are compared to the predicted results from the two models. In addition, the effects of NW geometry and cell properties are systematically evaluated to identify the key factors for penetration.

Nanotechnology and regenerative therapeutics in plastic surgery: The next frontier

The rapid ascent of nanotechnology and regenerative therapeutics as applied to medicine and surgery has seen an exponential rise in the scale of research generated in this field. This is evidenced not only by the sheer volume of papers dedicated to nanotechnology but also in a large number of new journals dedicated to nanotechnology and regenerative therapeutics specifically to medicine and surgery. Aspects of nanotechnology that have already brought benefits to these areas include advanced drug delivery platforms, molecular imaging and materials engineering for surgical implants. Particular areas of interest include nerve regeneration, burns and wound care, artificial skin with nanoelectronic sensors and head and neck surgery. This study presents a review of nanotechnology and regenerative therapeutics, with focus on its applications and implications in plastic surgery.

Liquid-solid spinodal decomposition mediated synthesis of Sb₂Se₃ nanowires and their photoelectric behavior

The convenient synthesis of one-dimensional nanostructures of chalcogenide compounds with a visible band-gap is an essential research topic in developing next-generation photoelectronic devices. In particular, the design of a theoretically predictable synthesis process provides great flexibility and has a considerable ripple effect in nanotechnology. In this study, a novel rational growth approach is designed using the spinodal decomposition phenomenon for the synthesis of the Sb2Se3 nanowires, which is based on the thermodynamic phase diagram. Using a stacked elemental layer (Sb/Sb-Se/Se) and heat treatment at 623 K for 30 min under an N2 atmosphere, the vertically inclined one-dimensional nanostructures are experimentally demonstrated. An additional annealing process at 523 K in a vacuum effectively removed excess Se elements due to their high vapor pressure, resulting in highly dense single crystal Sb2Se3 nanowire arrays. Adaption of our synthesis approach enables significantly improved photocurrent generation in the vertically stacked structure (glass/ITO/Sb2Se3 nanowires/ITO/PEN) from 6.4 (dark) to under 690 μA (at 3 V under AM 1.5G). In addition, a photoelectrochemical test demonstrated their p-type conductivity and robust photocorrosion performance in 0.5 M H2SO4.

Highly sensitive, label-free and real-time detection of alpha-fetoprotein using a silicon nanowire biosensor

Alpha-fetoprotein (AFP) is a tumor-associated fetal protein that can be expressed in large amounts in adult tumor cells, serving as a useful clinical tumor-marker. Silicon nanowire (SiNW) biosensors have emerged as a powerful tool in detecting protein biomarkers, due to their ultrahigh sensitivity, real-time response and label-free detection. We fabricated a SiNW-based field-effect transistor (FET) according to "top-down" methodology. First, anti-AFP antibodies were immobilized onto the surface of the SiNW-FET. A polydimethylsiloxane (PDMS) microchannel was then integrated to the modified SiNW-FET. Various concentrations of AFP were then pumped through the sensing area. We observed a current change that corresponded to binding of AFP onto the surface of our anti-AFP functionalized SiNW-FET biosensor. Concentrations of AFP as low as 0.1 ng/mL were detected. The results implicate our SiNW biosensor as an effective AFP biomarker detector with promising potential in clinical applications.

In Situ Investigation of Li and Na Ion Transport with Single Nanowire Electrochemical Devices

In the past decades, Li ion batteries are widely considered to be the most promising rechargeable batteries for the rapid development of mobile devices and electric vehicles. There arouses great interest in Na ion batteries, especially in the field of static grid storage due to their much lower production cost compared with Li ion batteries. However, the fundamental mechanism of Li and Na ion transport in nanoscale electrodes of batteries has been rarely experimentally explored. This insight can guide the development and optimization of high-performance electrode materials. In this work, single nanowire devices with multicontacts are designed to obtain detailed information during the electrochemical reactions. This unique platform is employed to in situ investigate and compare the transport properties of Li and Na ions at a single nanowire level. To give different confinement for ions and electrons during the electrochemical processes, two different configurations of nanowire electrode are proposed; one is to fully immerse the nanowire in the electrolyte, and the other is by using photoresist to cover the nanowire with only one end exposed. For both configurations, the conductivity of nanowire decreases after intercalation/deintercalation for both Li and Na ions, indicating that they share the similar electrochemical reaction mechanisms in layered electrodes. However, the conductivity degradation and structure destruction for Na ions is more severe than those of Li ions during the electrochemical processes, which mainly results from the much larger volume of Na ions and greater energy barrier encountered by the limited layered spaces. Moreover, the battery performances of coin cells are compared to further confirm this conclusion. The present work provides a unique platform for in situ electrochemical and electrical probing, which will push the fundamental and practical research of nanowire electrode materials for energy storage applications.

Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures

Transparent and stretchable electronics with remarkable bendability, conformability, and lightness are the key attributes for sensing or wearable devices. Transparent and stretchable field-effect transistor sensors using graphene-metal nanowire hybrid nanostructures have high mobility (≈3000 cm(2) V(-1) s(-1) ) with low contact resistance, and they are transferrable onto a variety of substrates. The integration of these sensors for RLC circuits enables wireless monitoring.

Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires

In this study, we demonstrate the epitaxial growth of ⟨001̅⟩ defect-free zinc-blende structured InAs nanowires on GaAs {111}B substrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying ⟨001̅⟩ nanowires have the orientation relationship of {11̅03}C//{002̅}InAs and [3̅302]C//[11̅0]InAs due to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {001̅} atomic planes of the nanowires, leading to the formation of the {001̅} catalyst/nanowire interfaces, and consequently the formation of ⟨001̅⟩ nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III-V nanowires through carefully controlling the crystal phase of the catalysts.