Stable and Efficient Red Perovskite Light-Emitting Diodes Based on Ca2+-Doped CsPbI3 Nanocrystals

Modification strategies of lead halide perovskite nanocrystals for efficient and stable LEDs

Lead halide perovskite nanocrystals (PNCs) hold immense promise in high-performance light-emitting diodes (LEDs) for future high-definition displays. Their adjustable bandgaps, vivid colors, and good carrier mobility are key factors that make them a potential game-changer. However, to fully harness their potential, the efficiency and long-term stability of PNCs-based light-emitting diodes (PNC-LEDs) must be enhanced. Recent material research results have shed light on the leading cause of performance decline in PNC-LEDs, which is ionic migration linked to surface defects and grain boundary imperfections. This review aims to present recent advancements in the modification strategies of PNCs, focusing on obtaining high-quality PNCs for LEDs. The PNC modification strategies are first summarized, including crystal structure regulation, nanocrystal size tuning, ligand exchange, and surface passivation. Then, the effects of these material design aspects on LED device performances, such as efficiency, brightness, and stability, are presented. Based on the efficient modification strategies, we propose promising material design insights for efficient and stable PNC-LEDs.

Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance

Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.

Stable deep-blue FAPbBr3 quantum dots facilitated by amorphous metal halide matrices

This communication describes a strategy to synthesize stable deep blue FAPbBr3 quantum dots (QDs) by constructing a matrix structure. Amorphous Ni2+-based metal halide matrices can stabilize QDs from both chemical and physical factors, and Ni2+ doping can further enhance their structural stability due to lattice shrinking. Such deep blue QD films exhibit stable X-ray diffraction patterns and photoluminescence even after 245 days of storage.

Simultaneous Enhancement of the Luminescence Intensity and Stability of Deep-Red CsPbI3 Perovskite Quantum Dots Achieved by a Doping Strategy

The phase instability of CsPbI3 perovskite quantum dots (PQDs) restricts their practical applications due to the easy conversion from the luminescent cubic phase to the non-luminescent orthorhombic phase. The elemental doping route has been regarded as one of the most effective strategies to achieve high-quality PQDs-based phosphors. Herein, a stoichiometric amount of nickel chloride (NiCl2) has been effectively doped into the CsPbI3 lattice. The incorporation of Ni2+ ions has little effect on the crystal phase, structure, and morphology of the CsPbI3 PQDs but greatly influences their luminescence properties. The Ni2+ doping not only improves the luminescence performance but also greatly enhances the stability against temperature, storage time, and polar solvent. The formation process and luminescence and stability improvement mechanisms have been discussed. Moreover, the influence of a series of other metal chlorides (KCl, NaCl, MgCl2, ZnCl2, SnCl2, and CaCl2) on the luminescence performance of CsPbI3 PQDs has been systematically investigated, revealing that the luminescence intensity increases by introducing CaCl2, SnCl2, or ZnCl2 but decreases after doping MgCl2, NaCl, or KCl into the CsPbI3 lattice. The as-proposed doping strategy may have a significant impact on tackling the intrinsic instability of all-inorganic CsPbX3 PQDs, shedding light on their future applications in light-emitting diode (LED) devices and solid-state lighting.

Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes

Lead halide perovskite nanocrystals are promising for next-generation high-definition displays, especially in light of their tunable bandgaps, high color purities, and high carrier mobility. Within the past few years, the external quantum efficiency of perovskite nanocrystal-based light-emitting diodes has progressed rapidly, reaching the standard for commercial applications. However, the low operational stability of these perovskite nanocrystal-based light-emitting diodes remains a crucial issue for their industrial development. Recent experimental evidence indicates that the migration of ionic species is the primary factor giving rise to the performance degradation of perovskite nanocrystal-based light-emitting diodes, and ion migration is closely related to the defects on the surface of perovskite nanocrystals and at the grain boundaries of their thin films. In this review, we focus on the central idea of surface reconstruction of perovskite nanocrystals, discuss the influence of surface defects on halide ion migration, and summarize recent advances in resurfacing perovskite nanocrystal strategies toward mitigating halide ion migration to improve the stability of the as-fabricated light-emitting diode devices. From the perspective of perovskite nanocrystal resurfacing, we set out a promising research direction for improving both the spectral and operational stability of perovskite nanocrystal-based light-emitting diodes.

Multidentate Ligand-Passivated CsPbI3 Perovskite Nanocrystals for Stable and Efficient Red-Light-Emitting Diodes

CsPbI₃ nanocrystals (NCs) have become a research hot spot in the field of light-emitting diodes (LEDs). Whereas, the long chain ligands with weak affinity to CsPbI₃ NCs have prevented their further development and commercialization. Herein, a novel multidentate short ligand tetramethylthiuram disulfide (TMTD) was employed via a ligand exchange process to enhance hole mobility and decrease trap density of the CsPbI₃ NCs film. Therefore, TMTD passivated CsPbI₃ NCs LED exhibited 20.65% maximum external quantum efficiency and 3861 cd/m² maximum luminance. Furthermore, TMTD passivated CsPbI₃ NCs LED exhibited good operational stability with a 128 min half-lifetime. This strategy using multidentate short ligand passivation provides an effective way to promote perovskite LED development and commercialization.

Highly Stable and Efficient Light-Emitting Diodes Based on Orthorhombic γ-CsPbI3 Nanocrystals

Orthorhombic γ-CsPbI₃ possesses the highest structural stability among the optically active (light-emissive) CsPbI₃ perovskites. Here, we make use of a seed-assisted heteroepitaxial growth to fabricate seed/core/shell CaI_x/γ-CsPbI₃/CaI₂ nanocrystals. Ultrasmall CaI_x nanoparticles serve as seeds to template the Pb-centered octahedral arrangement which enables the formation of the γ-CsPbI₃ phase and at the same time inhibit lattice strain by blocking the force transfer that otherwise leads to an octahedral twist and so improve the structural stability of the resulting nanocrystals. An outer shell composed from the same material, CaI₂, isolates the formed γ-CsPbI₃ nanocrystals from the environment, which also significantly improves their stability under ambient conditions. Optical and electrical studies indicate that the seed/core/shell CaI_x/γ-CsPbI₃/CaI₂ structure possesses a shallower set of trap states as compared to cubic α-CsPbI₃ nanocrystals. Light-emitting diodes utilizing these γ-CsPbI₃ nanocrystals show a record high external quantum efficiency of 25.3%, high brightness of over 13600 cd/m², and an operational lifetime of ∼14 h before reaching 50% of their initial luminance. These devices can repeatedly be illuminated over 650 times at ∼500 cd/m² with no decline of brightness, which indicates their great commercial potential.

Full-color micro-LED display with photo-patternable and highly ambient-stable perovskite quantum dot/siloxane composite as color conversion layers

In this paper, we successfully fabricated color conversion layers (CCLs) for full-color-mico-LED display using a perovskite quantum dot (PQD)/siloxane composite by ligand exchanged PQD with silane composite followed by surface activation by an addition of halide-anion containing salt. Due to this surface activation, it was possible to construct the PQD surface with a silane ligand using a non-polar organic solvent that does not damage the PQD. As a result, the ligand-exchanged PQD with a silane compound exhibited high dispersibility in the siloxane matrix and excellent atmospheric stability due to sol-gel condensation. Based on highly ambient stable PQD/siloxane composite based CCLs, full-color micro-LED display has a 1 mm pixel pitch, about 25.4 pixels per inch (PPI) resolution was achieved. In addition, due to the thin thickness of the black matrix to prevent blue light interference, the possibility of a flexible display that can be operated without damage even with a bending radius of 5 mm was demonstrated.

Highly stable lanthanide-doped CsPbI3 perovskite nanocrystals with near-unity quantum yield for efficient red light-emitting diodes

CsPbI₃ perovskite nanocrystals (NCs) are gaining popularity as promising photoactive materials for optoelectronic devices. However, their poor phase stability has caused substantial limitations in their practical application. Herein, the small-sized rare earth La cation is strategically introduced to fundamentally improve the NC phase stability against the environment, heat, and UV radiation by the partial substitution of Pb ions to suppress structural distortion and increase the formation energy. The strong interaction between La and I of the octahedra has been demonstrated to enable the effective suppression of the trap states, which promotes strengthened radiative recombination for a near-unity photoluminescence quantum yield (PLQY) of 99.3%. High energy bands have also been found for the La-doped NCs to narrow down the energy barrier for efficient hole injection. The superior optoelectronic properties of La-doped NCs promote great improvements in the perovskite light-emitting diode (PeLED) performances with a 5-fold improvement in external quantum efficiency (EQE) from 1.19 to 6.01% and 2-fold longer lifetime from 1451 to 2956 s. This work provides an effective method for small-sized metal ion-doped CsPbI₃ NCs to realize high emission efficiency and phase stabilization for efficient PeLEDs.

Recent progress and future prospects on halide perovskite nanocrystals for optoelectronics and beyond

As an emerging new class of semiconductor nanomaterials, halide perovskite (ABX3, X = Cl, Br, or I) nanocrystals (NCs) are attracting increasing attention owing to their great potential in optoelectronics and beyond. This field has experienced rapid breakthroughs over the past few years. In this comprehensive review, halide perovskite NCs that are either freestanding or embedded in a matrix (e.g., perovskites, metal-organic frameworks, glass) will be discussed. We will summarize recent progress on the synthesis and post-synthesis methods of halide perovskite NCs. Characterizations of halide perovskite NCs by using a variety of techniques will be present. Tremendous efforts to tailor the optical and electronic properties of halide perovskite NCs in terms of manipulating their size, surface, and component will be highlighted. Physical insights gained on the unique optical and charge-carrier transport properties will be provided. Importantly, the growing potential of halide perovskite NCs for advancing optoelectronic applications and beyond including light-emitting devices (LEDs), solar cells, scintillators and X-ray imaging, lasers, thin-film transistors (TFTs), artificial synapses, and light communication will be extensively discussed, along with prospecting their development in the future.

Healthy and stable lighting via single-component white perovskite nanoplates

Single-component healthy white light was achieved via Mn²⁺ post-doping into blue perovskite nanoplates (NPLs). The white light consists of two complementary colors, sky-blue (482 nm) and orange-red (610 nm), without harmful deep blue light (400-450 nm), which realizes the Commission Internationale de I'Eclairage (CIE) coordinates of (0.33, 0.33) (standard pure white light) and a color temperature of 6000 K. Benefitting from the lattice shrinking via Mn²⁺ doping, the stability of white NPLs toward long-term storage, UV light, heat, and polar solvents was greatly improved. Finally, a healthy and stable white light-emitting diode (WLED) was fabricated via down-conversion of a UV light LED with our white perovskite NPLs, and the WLED worked continuously for 240 minutes with a color drift of only (±0.006, ±0.004) and with a half lifetime (T₅₀) of 212 minutes.

Environmentally Friendly Syntheses of Self-Healed and Printable CsPbBr3 Nanocrystals

Generally, solvents used to synthesize perovskite NCs are toxic, which leads to waste liquid pollution and environmental degradation. Herein, we developed a novel environmentally friendly polar solvent method to synthesize CsPbBr₃ nanocrystals (NCs). Over 65% photoluminescence quantum yield (PLQYs) for NCs could be maintained over 45-850 h of storage time, and a maximum was 78% at 750 h. Such amazing stability in polar solvents is dominated by a ripening process, which heals surface defects. Additionally, their solid films also exhibited good moisture stability. Furthermore, CsPbBr₃ NCs were applied to inkjet-printing to prepare high-quality patterned films.

Efficient Pure Blue Light-Emitting Diodes Based on CsPbBr3 Quantum-Confined Nanoplates

Exploitation of next-generation blue light-emitting diodes (LEDs) is the foundation of the revolution in lighting and display devices. Development of high-performance blue perovskite LEDs is still challenging. Herein, 4-aminobenzenesulfonic acid (SA) is introduced to passivate blue CsPbBr₃ nanoplates (NPLs), reducing the ionic migration via a more stable Pb²⁺-SO₃^-- formation, and the trap state density of films shows a 50% reduction. The inevitable Br^- vacancy defects after the multistep washing process can be suppressed by a suitable MABr treatment, which can boost the external quantum efficiency (EQE) performance. It should be noted that the coverage of NPL films is another key factor to realize reproducible pure blue electroluminescence (EL). Therefore, we proposed an alternate droplet/spin coating method to improve the coverage and thickness of NPL layer to prevent hole transport layer emission and increase the reproducibility of LED performance and spectra. Furthermore, we designed hole transport layers to decrease the hole transport barrier and improve the energy-level alignment. According to SA passivation, MABr treatment, alternate droplet/spin coating method, and device structure optimization, a CsPbBr₃ NPL-based pure blue (0.138, 0.046) LED with 3.18% maximum EQE can be achieved, and the half-lifetime of EL can be enhanced 1.71 times as compared to that of the counterpart LED without SA. Both performance and stability of pure blue NPL LEDs can be greatly improved via ligand passivation, alternate droplet/spin coating method, and device structure optimization, which is a trend to promote the development of pure blue perovskite LEDs in future.