Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration

Progress in Research on Co-Packaged Optics

In the 5G era, the demand for high-bandwidth computing, transmission, and storage has led to the development of optoelectronic interconnect technology. This technology has evolved from traditional board-edge optical modules to smaller and more integrated solutions. Co-packaged optics (CPO) has evolved as a solution to meet the growing demand for data. Compared to typical optoelectronic connectivity technology, CPO presents distinct benefits in terms of bandwidth, size, weight, and power consumption. This study presents an overview of CPO, highlighting its fundamental principles, advantages, and distinctive features. Additionally, it examines the current research progress of two distinct approaches utilizing Vertical-Cavity Surface-Emitting Laser (VCSEL) and silicon photonics integration technology. Additionally, it provides a concise overview of the many application situations of CPO. Expanding on this, the analysis focuses on the CPO using 2D, 2.5D, and 3D packaging techniques. Lastly, taking into account the present technological environment, the scientific obstacles encountered by CPO are analyzed, and its future progress is predicted.

Minimal-gain-printed silicon nanolaser

While there have been notable advancements in Si-based optical integration, achieving compact and efficient continuous-wave (CW) III-V semiconductor nanolasers on Si at room temperature remains a substantial challenge. This study presents an innovative approach: the on-demand minimal-gain-printed Si nanolaser. By using a carefully designed minimal III-V optical gain structure and a precise on-demand gain-printing technique, we achieve lasing operation with superior spectral stability under pulsed conditions and observe a strong signature of CW operation at room temperature. These achievements are attributed to addressing both fundamental and technological issues, including carrier diffusion, absorption loss, and inefficient thermal dissipation, through minimal-gain printing in the nanolaser. Moreover, our demonstration of the laser-on-waveguide structure emphasizes the integration benefits of this on-demand gain-printed Si nanolaser, highlighting its potential significance in the fields of Si photonics and photonic integrated circuits.

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO2 mask interface, stimulated emissions of the EH11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm-2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.

Heterogeneously integrated InGaP/Si waveguides for nonlinear photonics

The heterogeneous integration of III-V semiconductors with the Silicon platform enables the merging of photon sources with Silicon electronics while allowing the use of Silicon mature processing techniques. However, the inherent sufficient quality of III-Vs' native oxides made imperative the use of deposited interfacial oxide layers or adhesives to permit the bonding. Here we present a novel approach enabling the heterogeneous integration of structured III-V semiconductors on silicates via molecular bonding at 150 °C, much below the CMOS degradation temperature, is presented. The transfer of 235 nm thick and 2 mm long InGaP waveguides with widths of 4.65, 2.6 and 1.22 μm on 4 μm thick Si thermal oxide, with optional SX AR-N 8200.18 cladding, has been experimentally verified. Post-processing of the 1.20 and 0.60 μm input/output tappers has allowed the implementation of double-inverse tapers. The minimal processing requirements and the compatibility with transferring non-cladded structures of the presented technique are demonstrated. The quality of the transferred waveguides bonding interface and their viability for non-linear optics applications has been tested by means of the surface contribution to the optical non-linearity via modal phase-matched second-harmonic generation.

Total net-rate of 27.88 Tb/s full C-band transmission over 4,550 km using 150 km span length and high-gain EDFA amplification

We experimentally demonstrate a total net-rate of 27.88 Tb/s for C-band wavelength-division multiplexing (WDM) transmission over an ultralong span-length of 150 km. It is the largest net capacity × span-length product of 4182 Tb/s·km for C-band, single-core, standard single-mode optical fiber transmission over a length of more than 3,000 km. A total of 99 channels, spaced at 50 GHz intervals, are employed for transmitting 32 GBaud probabilistically constellation-shaped (PCS) 64QAM signals with an information entropy of 5.5. High gain amplifiers can achieve wavelength-division multiplexing (WDM) transmission with a bandwidth of 6.25 THz, at a noise figure below 4.3 dB, without the assistance of distributed Raman amplification.

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers, extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study, we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth, namely lattice and domain mismatches. Using this approach, we achieved state-of-the-art performance of the electrically-pumped, continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm-2, and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 °C and pulsed lasing at over 130 °C were achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

Hybrid lithium tantalite-silicon integrated photonics platform for electro-optic modulation

Integrated electro-optic modulators are key components in photonic integrated circuits. Silicon photonic technology is considered to be promising for large-scale and low-cost integration. However, silicon does not exhibit any Pockels effect, and the electro-optic modulator based on free-carrier dispersion suffers from challenges such as high-power consumption, limited bandwidth, and large optical propagation loss. Here, a new, to the best of our knowledge, hybrid lithium tantalite-silicon platform is proposed for electro-optic modulators based on the Pockels effect. Benefiting from the strong Pockels coefficients of a thin-film lithium tantalite, a hybrid microring-based modulator is demonstrated. The quality factor and the extinction ratio of the hybrid microring are 1.7 × 104 and 10 dB, respectively. The linear bidirectional wavelength tuning efficiency is measured as 12.8 pm/V. The measured 3-dB bandwidth is > 20 GHz. High-quality eye diagrams of 20 Gbps non-return-to-zero signal and 20 Gbps four-level pulse amplitude modulation signals are generated experimentally. The proposed platform extends the toolbox of silicon photonics technology, which paves the way for high-speed modulators and phase shifters in optical communication and optical phased array.

Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator

Current heterogeneous Si photonics usually bond III-V wafers/dies on a silicon-on-insulator (SOI) substrate in a back-end process, whereas monolithic integration by direct epitaxy could benefit from a front-end process where III-V materials are grown prior to the fabrication of passive optical circuits. Here we demonstrate a front-end-of-line (FEOL) processing and epitaxy approach on Si photonics 220 nm (001) SOI wafers to enable positioning dislocation-free GaAs layers in lithographically defined cavities right on top of the buried oxide layer. Thanks to the defect confinement in lateral growth, threading dislocations generated from the III-V/Si interface are effectively trapped within ∼250 nm of the Si surface. This demonstrates the potential of in-plane co-integration of III-Vs with Si on mainstream 220 nm SOI platform without relying on thick, defective buffer layers. The challenges associated with planar defects and coalescence into larger membranes for the integration of on-chip optical devices are also discussed.

High-performance optical phased array for LiDARs demonstrated by monolithic integration of polymer and SiN waveguides

Optical phased array (OPA) beam scanners for light detection and ranging (LiDAR) are proposed by integrating polymer waveguides with superior thermo-optic effect and silicon nitride (SiN) waveguides exhibiting strong modal confinement along with high optical power capacity. A low connection loss of only 0.15 dB between the polymer and SiN waveguides was achieved in this work, enabling a low-loss OPA device. The polymer-SiN monolithic OPA demonstrates not only high optical throughput but also efficient beamforming and stable beam scanning. This novel integrative approach highlights the potential of leveraging heterogeneous photonic materials to develop advanced photonic integrated circuits with superior performance.

Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits

Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). In particular, in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and scattering can be a significant loss mechanism, and needs to be suppressed. Here, we quantify the optical propagation loss due to surface state absorption in a suspended GaAs PIC platform, probe its origins using x-ray photoemission spectroscopy and spectroscopic ellipsometry, and show that it can be mitigated by surface passivation using alumina (Al₂O₃).

3D integration enables ultralow-noise isolator-free lasers in silicon photonics

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, in optical systems such as microwave synthesizers6, optical gyroscopes7 and atomic clocks8, photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format-that is, on a single chip-for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon.

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III-V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

Narrow linewidth semiconductor multi-wavelength DFB laser array simultaneously self-injection locked to a single microring resonator

We experimentally demonstrate a narrow linewidth semiconductor multi-wavelength distributed feedback (DFB) laser array by simultaneously injection locking each laser to the corresponding resonance of a single on-chip microring resonator. The white frequency noises of all the DFB lasers is reduced by more than 40 dB once they are simultaneously injection locked to a single microring resonator with a quality factor (Q-factor) of 2.38 million. Correspondingly, the instantaneous linewidths of all the DFB lasers are narrowed by a factor of 10⁴. In addition, frequency combs originating from non-degenerate four-wave mixing (FWM) between the locked DFB lasers are also observed. Simultaneously injection locking multi-wavelength lasers to a single on-chip resonator may enable the possibilities of integrating a narrow-linewidth semiconductor laser array on a single chip and having multiple microcombs in a single resonator, which are in high demand in wavelength division multiplexing coherent optical communication systems and metrological applications.

Improved performance of InGaAs/AlGaAs quantum well lasers on silicon using InAlAs trapping layers

InGaAs/AlGaAs multiple quantum well lasers grown on silicon (001) by molecular beam epitaxy have been demonstrated. By inserting InAlAs trapping layers into AlGaAs cladding layers, misfit dislocations easily located in the active region can be effectively transferred out of the active region. For comparison, the same laser structure without the InAlAs trapping layers was also grown. All these as-grown materials were fabricated into Fabry-Perot lasers with the same cavity size of 20 × 1000 µm². The laser with trapping layers achieved a 2.7-fold reduction in threshold current density under pulsed operation (5 µs-pulsed width, 1%-duty cycle) compared to the counterpart, and further realized a room-temperature continuous-wave lasing with a threshold current of 537 mA which corresponds to a threshold current density of 2.7 kA/cm². When the injection current reached 1000 mA, the single-facet maximum output power and slope efficiency were 45.3 mW and 0.143 W/A, respectively. This work demonstrates significantly improved performances of InGaAs/AlGaAs quantum well lasers monolithically grown on silicon, providing a feasible solution to optimize the InGaAs quantum well structure.

Integrating a Nanowire Laser in an on-Chip Photonic Waveguide

We report a simple and facile integration strategy of a laser source in passive photonic integrated circuits (PICs) by deterministically embedding semiconductor nanowires (NWs) in waveguides. InP NWs laid on a SiN slab are buried by a polymer layer which also acts as an electron-beam resist. With electron-beam lithography, hybrid polymer-SiN waveguides are formed with precisely embedded NWs. The lasing behavior of the waveguide-embedded NWs is confirmed, and more importantly, the NW lasing mode couples into the hybrid waveguide and forms an in-plane guiding mode. Multiple waveguide-embedded NW lasers are further integrated in complex photonic structures to illustrate that the waveguiding mode supplied by the NW lasers could be manipulated for on-chip signal processing, including power splitting and wavelength-division multiplexing. This integration strategy of an on-chip laser is applicable to other PIC platforms, such as silicon and lithium niobate, and the top cladding layer could be changed by depositing SiN or SiO₂, promising its CMOS compatibility.

Modeling of a multi-parameter chaotic optoelectronic oscillator based on the Fourier neural operator

A model construction scheme of chaotic optoelectronic oscillator (OEO) based on the Fourier neural operator (FNO) is proposed. Different from the conventional methods, we learn the nonlinear dynamics of OEO (actual components) in a data-driven way, expecting to obtain a multi-parameter OEO model for generating chaotic carrier with high-efficiency and low-cost. FNO is a deep learning architecture which utilizes neural network as a parameter structure to learn the trajectory of the family of equations from training data. With the assistance of FNO, the nonlinear dynamics of OEO characterized by differential delay equation can be modeled easily. In this work, the maximal Lyapunov exponent is applied to judge whether these time series have chaotic behavior, and the Pearson correlation coefficient (PCC) is introduced to evaluate the modeling performance. Compare with long and short-term memory (LSTM), FNO is not only superior to LSTM in modeling accuracy, but also requires less training data. Subsequently, we analyze the modeling performance of FNO under different feedback gains and time delays. Both numerical and experimental results show that the PCC can be greater than 0.99 in the case of low feedback gain. Next, we further analyze the influence of different system oscillation frequencies, and the generalization ability of FNO is also analyzed.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.

Low-κ, narrow linewidth III-V-on-SOI distributed feedback lasers with backside sampled Bragg gratings

We demonstrate a heterogeneously integrated III-V-on-SOI distributed feedback laser with a low grating strength (κ < 40 cm^-1) and a narrow linewidth of Δν = 118 kHz. The laser operates single mode with a side-mode suppression ratio over 45 dB, provides a single-sided waveguide-coupled output power of 22 mW (13.4 dBm) and has a wall-plug efficiency of 17%. The dynamic characteristics were also evaluated, obtaining an intrinsic 3 dB modulation bandwidth of 14 GHz and a photon lifetime of 8 ps. Large-signal intensity modulation using a 2³¹-1 PRBS pattern length revealed open eye diagrams up to 25 Gb/s and a penalty on the dynamic extinction ratio lower than 1 dB after transmission over a 2 km standard single mode optical fiber.

Miniaturization of Laser Doppler Vibrometers-A Review

Laser Doppler vibrometry (LDV) is a non-contact vibration measurement technique based on the Doppler effect of the reflected laser beam. Thanks to its feature of high resolution and flexibility, LDV has been used in many different fields today. The miniaturization of the LDV systems is one important development direction for the current LDV systems that can enable many new applications. In this paper, we will review the state-of-the-art method on LDV miniaturization. Systems based on three miniaturization techniques will be discussed: photonic integrated circuit (PIC), self-mixing, and micro-electrochemical systems (MEMS). We will explain the basics of these techniques and summarize the reported miniaturized LDV systems. The advantages and disadvantages of these techniques will also be compared and discussed.

Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance

In this work, we numerically and experimentally examined the impact of parasitic capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical modulator. The numerical analysis revealed that the parasitic capacitance between the III-V membrane and the Si slab should be considered to achieve high-speed modulation, particularly in the case of a thick gate oxide. We also fabricated a high-speed InGaAsP/Si hybrid MOS optical modulator with a low capacitance using a SiO₂-embedded Si waveguide. The fabricated device exhibited a modulation efficiency of 0.245 Vcm and a 3 dB bandwidth of up to 10 GHz. Clear eye patterns with 25 Gbps non-return-to-zero (NRZ) modulation and 40 Gbps 4-level pulse amplitude modulation (PAM-4) were obtained without pre-emphasis.

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

Light-induced thermomagnetic recording of thin-film magnet CoFeB on silicon waveguide for on-chip magneto-optical memory

Thermomagnetic recording is a technique used as a writing process for magneto-optical (MO) drives. Despite their significant advantages, such as rewritability, nonvolatility, reliability, and large cycling endurance, MO drives are rarely used today because of the complex drive systems that must deal with magnetic field and lightwave simultaneously. This study reports on the light-induced thermomagnetic recording of a ferromagnetic thin-film CoFeB on a Si photonic platform. Lightwave guided in the Si waveguide evanescently coupled to the thin-film magnet and underwent optical absorption, resulting in heating and a decrease in coercive force. Therefore, we observed magnetization reversal with an applied magnetic field for both continuous and modulated light pulses using a magneto-optical Kerr effect microscope, and the light-induced thermomagnetic recording was experimentally demonstrated on a Si photonic platform. The proposed scheme enables the realization of on-chip MO memories on the Si photonic platform in which neither bulky free-space optics nor mechanical rotation systems are required.

Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers

Quantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically and experimentally, the advantages of silicon-based quantum dot lasers for passive mode-locking applications. Using a frequency domain approach, i.e., with the laser electric field described in terms of a superposition of passive cavity eigenmodes, a precise quantitative description of the conditions for frequency comb and pulse train formation is supported, along with a concise explanation of the progression to mode locking via Adler’s equation. The path to transform-limited performance is discussed and compared to the experimental beat-note spectrum and mode-locked pulse generation. A theory/experiment comparison is also used to extract the experimental group velocity dispersion, which is a key obstacle to transform-limited performance. Finally, the linewidth enhancement contribution to the group velocity dispersion is investigated. For passively mode-locked quantum dot lasers directly grown on silicon, our experimental and theoretical investigations provide a self-consistent accounting of the multimode interactions giving rise to the locking mechanism, gain saturation, mode competition and carrier-induced refractive index.

High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10 mW

A high-speed silicon photonic microdisc modulator is used with more than 10 mW optical power in the bus waveguide, extending the optical power handling regime used with compact silicon resonant modulators at 1550 nm. We present an experimental study of the wavelength tuning range and biasing path required to shift the resonant frequency to the optimal point versus on chip power. We measure the optical modulation amplitude (OMA) along different biasing trajectories of the microdisc under active modulation and demonstrate an OMA of 4.1 mW with 13.5 mW optical power in the bus waveguide at 20 Gbit/s non-return to zero (NRZ) data modulation.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

180 Gbit/s Si3N4-waveguide coupled germanium photodetector with improved quantum efficiency

A high quantum efficiency (QE) and high-speed silicon nitride (Si₃N₄) waveguide coupled germanium-on-silicon photodetector (Ge-on-Si PD) is presented. The proposed device is fabricated in a commercial 90 nm silicon photonics process platform. By decreasing the spacing between the tapered Si₃N₄ waveguide and the bottom Si to 200 nm and the Si₃N₄ thickness to 300 nm, the QE is significantly improved. Although the theoretical responsivity can reach up to 0.92 A/W at 1550 nm, the measured value is calculated to be approximately 0.61 A/W. The maximum experimental responsivity is about 0.9 A/W at 1485 nm. The 3 dB optoelectrical bandwidth of up to 54 GHz is demonstrated at a -3.3V bias. Additionally, the 80, 90, 100, and 105 Gbit/s non-return-to-zero on-off-keying and the 150, 160, 170, and 180 Gbit/s four-level pulse amplitude modulation clear openings of the electrical eye diagrams are attained. Overall, the Si₃N₄-waveguide coupled Ge-on-Si PD in this work possesses higher QE and operates at the highest data rates reported so far.

Exciting Magnetic Dipole Mode of Split-Ring Plasmonic Nano-Resonator by Photonic Crystal Nanocavity

On-chip exciting electric modes in individual plasmonic nanostructures are realized widely; nevertheless, the excitation of their magnetic counterparts is seldom reported. Here, we propose a highly efficient on-chip excitation approach of the magnetic dipole mode of an individual split-ring resonator (SRR) by integrating it onto a photonic crystal nanocavity (PCNC). A high excitation efficiency of up to 58% is realized through the resonant coupling between the modes of the SRR and PCNC. A further fine adjustment of the excited magnetic dipole mode is demonstrated by tuning the relative position and twist angle between the SRR and PCNC. Finally, a structure with a photonic crystal waveguide side-coupled with the hybrid SRR–PCNC is illustrated, which could excite the magnetic dipole mode with an in-plane coupling geometry and potentially facilitate the future device application. Our result may open a way for developing chip-integrated photonic devices employing a magnetic field component in the optical field.

Improving spectral efficiency of digital radio-over-fiber transmission using two-dimensional discrete cosine transform with vector quantization

Radio-over-fiber (RoF) transmission is a quite reliable technology to support the current and future demands of rapidly progressing broadband wireless network with large capacity and high spectral efficiency. In this paper, we report and demonstrate a digital RoF transmission system using two-dimensional discrete cosine transform with vector quantization (2D-DCT-VQ). By employing the 2D-DCT-VQ technique, the spectral efficiency can be greatly improved, while the system performance is comparable to the traditional approach without compression. The proposed method is experimentally demonstrated in a 20-km 5-Gbaud/λ four-level pulse modulation intensity-modulation/direct-detection optical link. In the orthogonal frequency-division multiplexing -modulated downlink illustrated experimentally, the transmission rate rises by 69.49% on account of the compressed samples by using the proposed method.

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well (MQW) photoconductors (PCs) on silicon substrate were investigated. The high quality GeSn/Ge MQW epitaxial structure was grown on a silicon substrate using low temperature molecular beam epitaxy techniques with atomically precise thickness control. Surface-illuminated GeSn/Ge MQW PCs were fabricated using complementary metal-oxide-semiconductor-compatible processing and characterized in a wide temperature range of 55-320 K. The photodetection range was extended to λ=2235nm at T=320K due to bandgap shrinkage with Sn alloying. Measured spectral responsivity was enhanced at reduced temperatures. These results provide better understanding of GeSn/Ge MQW structures for efficient short-wave infrared photodetection.

Laser soliton microcombs heterogeneously integrated on silicon

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection and ranging, or photonics-assisted signal processing. We report heterogeneously integrated laser soliton microcombs combining both indium phospide/silicon (InP/Si) semiconductor lasers and ultralow-loss silicon nitride (Si₃N₄) microresonators on a monolithic silicon substrate. Thousands of devices can be produced from a single wafer by using complementary metal-oxide-semiconductor-compatible techniques. With on-chip electrical control of the laser-microresonator relative optical phase, these devices can output single-soliton microcombs with a 100-gigahertz repetition rate. Furthermore, we observe laser frequency noise reduction due to self-injection locking of the InP/Si laser to the Si₃N₄ microresonator. Our approach provides a route for large-volume, low-cost manufacturing of narrow-linewidth, chip-based frequency combs for next-generation high-capacity transceivers, data centers, space and mobile platforms.

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

The realization of a silicon optical phase shifter marked a cornerstone for the development of silicon photonics, and it is expected that optical interconnects based on the technology relax the explosive datacom growth in data centers. High-performance silicon optical modulators and switches, integrated into a chip, play a very important role in optical transceivers, encoding electrical signals onto the light at high speed and routing the optical signals, respectively. The development of the devices is continuously required to meet the ever-increasing data traffic at higher performance and lower cost. Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc. Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.

Narrow linewidth VCSEL based on resonant optical feedback from an on-chip microring add-drop filter

We demonstrate a narrow linewidth vertical-cavity surface-emitting laser (VCSEL) by injecting resonant optical feedback into the lasing cavity. A single longitudinal mode VCSEL with a Lorentzian linewidth of 32.6 kHz and a purified optical spectrum is experimentally achieved by an on-chip microring add-drop filter with a quality factor of 1.36 million, where the feedback level is ${-}{47.77}\;{\rm{dB}}$. The frequency noise spectrum of the VCSEL demonstrates that the thermo-optic effect in the microring resonator can also stabilize the lasing frequency. A VCSEL with narrow linewidth and stable frequency provides a high-performance light source for a single VCSEL or VCSEL array-based application.