Vertically Concentrated Quantum Wells Enabling Highly Efficient Deep-Blue Perovskite Light-Emitting Diodes

Deep-blue perovskite light-emitting diodes (PeLEDs) based on quasi-two-dimensional (quasi-2D) systems exist heightened sensitivity to the domain distribution. The top-down crystallization mode will lead to a vertical gradient distribution of quantum well (QW) structure, which is unfavorable for deep-blue emission. Herein, a thermal gradient annealing treatment is proposed to address the polydispersity issue of vertical QWs in quasi-2D perovskites. The formation of large-n domains at the upper interface of the perovskite film can be effectively inhibited by introducing a low-temperature source in the annealing process. Combined with the utilization of NaBr to inhibit the undesirable n=1 domain, a vertically concentrated QW structure is ultimately attained. As a result, the fabricated device delivers a narrow and stable deep-blue emission at 458 nm with an impressive external quantum efficiency (EQE) of 5.82 %. Green and sky-blue PeLEDs with remarkable EQE of 21.83 % and 17.51 % are also successfully achieved, respectively, by using the same strategy. The findings provide a universal strategy across the entire quasi-2D perovskites, paving the way for future practical application of PeLEDs.

Engineering Semi-Reversed Quantum Well Photocatalysts for Highly-Efficient Solar-to-Fuels Conversion

Semiconductor quantum wells (QWs) exhibit high charge-utilization efficiency for light-emitting applications due to their strong charge confinement effect. Inspired by this effect, herein, this work proposes a new idea to significantly improve the photo-generated charge separation for attaining a highly-efficient solar-to-fuels conversion process through "semi-reversing" the conventional QWs to confine only the photo-generated electrons. This electron confinement-improved charge separation is implemented in the well-designed model of the CdS/TiO2/CdS semi-reversed QW (SRQW) structure. The latter is fabricated by selectively assembling CdS quantum dots (QDs) onto the {101} facets (ultra-thin edge regions) of the TiO2 nanosheets (NSs). Upon light excitation, the photo-generated electrons of SRQW can be confined on the TiO2-{101} facets in the vicinity of the CdS/TiO2 hetero-interface. Thereby, the continuous multi-electron injection to the adsorbed reactants on the interfacial active-sites is significantly accelerated. Thus, the CdS/TiO2/CdS SRQW exhibits ≈35.7 and ≈56.0-fold enhancements on the photocatalytic activities for water and CO2 reduction, respectively, compared to those of pure TiO2. Correspondingly, its CH4-product selectivity is increased by ≈180%. This work provides a novel charge separation mechanism, which is of great importance for the design of the next-generation quantum-sized photocatalysts for solar-to-fuels conversion.

Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells

InAs quantum wells (QWs) are promising material systems due to their small effective mass, narrow bandgap, strong spin-orbit coupling, large g-factor, and transparent interface to superconductors. Therefore, they are promising candidates for the implementation of topological superconducting states. Despite this potential, the growth of InAs QWs with high crystal quality and well-controlled morphology remains challenging. Adding an overshoot layer at the end of the metamorphic buffer layer, i.e., a layer with a slightly larger lattice constant than the active region of the device, helps to overcome the residual strain and provides optimally relaxed lattice parameters for the QW. In this work, we systematically investigated the influence of overshoot layer thickness on the morphological, structural, strain, and transport properties of undoped InAs QWs on GaAs(100) substrates. Transmission electron microscopy reveals that the metamorphic buffer layer, which includes the overshoot layer, provides a misfit dislocation-free InAs QW active region. Moreover, the residual strain in the active region is compressive in the sample with a 200 nm-thick overshoot layer but tensile in samples with an overshoot layer thicker than 200 nm, and it saturates to a constant value for overshoot layer thicknesses above 350 nm. We found that electron mobility does not depend on the crystallographic directions. A maximum electron mobility of 6.07 × 105 cm2/Vs at 2.6 K with a carrier concentration of 2.31 × 1011 cm-2 in the sample with a 400 nm-thick overshoot layer has been obtained.

Regulating Phase Distribution of Dion-Jacobson Perovskite Colloidal Multiple Quantum Wells Toward Highly Stable Deep-Blue Emission

Metal halide perovskite colloidal quantum wells (CQWs) hold great promise for modern photonics and optoelectronics. However, current studies focus on Ruddlesden-Popper (R-P) phase perovskite CQWs that contain bilayers of monovalent long-chain alkylamomoniums between the separated perovskite octahedra layers. The bilayers are packed back-to-back via weak van der Waals interaction, resulting in inferior charge carrier transport and easier decomposition of perovskite. This report first creates a new type of perovskite colloidal multiple QWs (CMQWs) in the form of Dion-Jacobson (D-J) structure by introducing an asymmetric diammonium cation. Furthermore, the phase distribution is optimized by the synergistic effect of valeric acid and zwitterionic lecithin, finally achieving pure deep-blue emission at 435 nm with narrow full width at half maximum. The diammonium layer in D-J perovskite CMQWs features extremely short width of only ≈0.6 nm, thereby contributing to more effective charge carrier transport and higher stability. Through the continuous photoluminescence (PL) measurement and corresponding theoretical calculation, the higher stability of D-J perovskite CMQWs than that of R-P structural CMQWs is confirmed. This work reveals the inherent superior stability of D-J structural CMQWs, which opens a new direction for fabricating stable perovskite optoelectronics.

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

This study attempted to improve the internal quantum efficiency (IQE) of 580 nm emitting Ga0.70In0.30N/GaN quantum-wells (QWs) through the replacement of a conventional c-sapphire substrate and an in-situ low-temperature GaN (LT-GaN) buffer layer with the ScAlMgO4 (0001) (SCAM) substrate and an ex-situ sputtered-AlN (sp-AlN) buffer layer, simultaneously. To this end, we initially tried to optimize the thickness of the sp-AlN buffer layer by investigating the properties/qualities of an undoped-GaN (u-GaN) template layer grown on the SCAM substrate with the sp-AlN buffer layer in terms of surface morphology, crystallographic orientation, and dislocation type/density. The experimental results showed that the crystallinity of the u-GaN layer grown on the SCAM substrate with the 30 nm thick sp-AlN buffer layer [GaN/sp-AlN(30 nm)/SCAM] was superior to that of the conventional u-GaN template layer grown on the c-sapphire substrate with an LT-GaN buffer layer (GaN/LT-GaN/FSS). Notably, the experimental results showed that the structural properties and crystallinity of GaN/sp-AlN(30 nm)/SCAM were considerably different from those of GaN/LT-GaN/FSS. Specifically, the edge-type dislocation density was approximately two orders of magnitude higher than the screw-/mixed-type dislocation density, i.e., the generation of screw-/mixed-type dislocation was suppressed through the replacement, unlike that of the GaN/LT-GaN/FSS. Next, to investigate the effect of replacement on the subsequent QW active layers, 580 nm emitting Ga0.70In0.30N/GaN QWs were grown on the u-GaN template layers. The IQEs of the samples were measured by means of temperature-dependent photoluminescence efficiency, and the results showed that the replacement improved the IQE at 300 K by approximately 1.8 times. We believe that the samples fabricated and described in the present study can provide a greater insight into future research directions for III-nitride light-emitting devices operating in yellow-red spectral regions.

Mesoscopic Conductance Fluctuations in 2D HgTe Semimetal

Mesoscopic conductance fluctuations were discovered in a weak localization regime of a strongly disordered two-dimensional HgTe-based semimetal. These fluctuations exist in macroscopic samples with characteristic sizes of 100 μm and exhibit anomalous dependences on the gate voltage, magnetic field, and temperature. They are absent in the regime of electron metal (at positive gate voltages) and strongly depend on the level of disorder in the system. All the experimental facts lead us to the conclusion that the origin of the fluctuations is a special collective state in which the current is conducted through the percolation network of electron resistances. We suppose that the network is formed by fluctuation potential whose amplitude is higher than the Fermi level of electrons due to their very low density.

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.

Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit

In this work, we present a theoretical study on the use of Cu₂ZnSn(S,Se)₄ quantum wells in Cu₂ZnSnS₄ solar cells to enhance device efficiency. The role of different well thickness, number, and S/(S + Se) composition values is evaluated. The physical mechanisms governing the optoelectronic parameters are analyzed. The behavior of solar cells based on Cu₂ZnSn(S,Se)₄ without quantum wells is also considered for comparison. Cu₂ZnSn(S,Se)₄ quantum wells with a thickness lower than 50 nm present the formation of discretized eigenstates which play a fundamental role in absorption and recombination processes. Results show that well thickness plays a more important role than well number. We found that the use of wells with thicknesses higher than 20 nm allow for better efficiencies than those obtained for a device without nanostructures. A record efficiency of 37.5% is achieved when 36 wells with a width of 50 nm are used, considering an S/(S + Se) well compositional ratio of 0.25.

Manipulating the Formation of 2D/3D Heterostructure in Stable High-Performance Printable CsPbI3 Perovskite Solar Cells

Manipulating the formation process of the 2D/3D perovskite heterostructure, including its nucleation/growth dynamics and phase transition pathway, plays a critical role in controlling the charge transport between 2D and 3D crystals, and consequently, the scalable fabrication of efficient and stable perovskite solar cells. Herein, the structural evolution and phase transition pathways of the ligand-dependent 2D perovskite atop the 3D surface are revealed using time-resolved X-ray scattering. The results show that the ligand size and shape have a critical influence on the final 2D structure. In particular, ligands with smaller sizes and more reactive sites tend to form the n = 1 phase. Increasing the ligand size and decreasing the reactive sites promote the transformation from 3D to n = 3 and n < 3 phases. These findings are useful for the rational design of the phase distribution in 2D perovskites to balance the charge transport and stability of the perovskite films. Finally, solar cells based on ambient-printed CsPbI₃ with n-butylammonium iodide treatment achieve an improved efficiency of 20.33%, which is the highest reported value for printed inorganic perovskite solar cells.

Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics

Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na₂KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics.

High Efficient Solar Cell Based on Heterostructure Constructed by Graphene and GaAs Quantum Wells

Despite the fascinating optoelectronic properties of graphene, the power conversion efficiency (PCE) of graphene based solar cells remains to be lifted up. Herein, it is experimentally shown that the graphene/quantum wells/GaAs heterostructure solar cell can reach a PCE of 20.2% and an open-circuit voltage (V_oc ) as high as 1.16 V at 90 K. The high efficiency is a result of carrier multiplication (CM) effect of graphene in the graphene/GaAs heterostructure. Especially, the external quantum efficiency (EQE) in the ultraviolet wavelength can be improved up to 72.2% based on the heterostructure constructed by graphene/In_0.15 Ga_0.85 As/GaAs_0.75 P_0.25 quantum wells/GaAs. The EQE increases as the light wavelength decreases, which indicates more carriers can be effectively excited by the higher energy photons through CM effect. Owing to these physical characters, the graphene/GaAs heterostructure solar cell will provide a possible way to exceed Shockley-Queisser (S-Q) limit.

The Crucial Role of Solvation Forces in the Steric Stabilization of Nanoplatelets

The steric stability of inorganic colloidal particles in an apolar solvent is usually described in terms of the balance between three contributions: the van der Waals attraction, the free energy of mixing, and the ligand compression. However, in the case of nanoparticles, the discrete nature of the ligand shell and the solvent has to be taken into account. Cadmium selenide nanoplatelets are a special case. They combine a weak van der Waals attraction and a large facet to particle size ratio. We use coarse grained molecular dynamics simulations of nanoplatelets in octane to demonstrate that solvation forces are strong enough to induce the formation of nanoplatelet stacks and by that have a crucial impact on the steric stability. In particular, we demonstrate that for sufficiently large nanoplatelets, solvation forces are proportional to the interacting facet area, and their strength is intrinsically tied to the softness of the ligand shell.

Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy

This work employs femtosecond transient absorption spectroscopy to investigate the ultrafast carrier dynamics of bound states in In_0.14Ga_0.86N/GaN quantum wells. The ground state (GS) dynamics usually dominate these characteristics, appearing as a prominent peak in the absorption spectra. It is observed that the excited state also contributes to the overall dynamics, with its signature showing up later. The contributions of both the ground and excited states in the absorption spectra and time-resolved dynamics are decoupled in this work. The carrier density in the GS first increases and then decays with time. The carriers populate the excited state only at a delayed time. The dynamics are studied considering the Quantum-Confined Stark Effect-induced wavelength shift in the absorption. The relevant microscopic optoelectronic processes are understood phenomenologically, and their time constants are extracted. An accurate study of these dynamics provides fundamentally essential insights into the time-resolved dynamics in quantum-confined heterostructures and can facilitate the development of efficient light sources using GaN heterostructures.

The Role of Spin-Flip Collisions in a Dark-Exciton Condensate

We show that a Bose-Einstein condensate consisting of dark excitons forms in GaAs coupled quantum wells at low temperatures. We find that the condensate extends over hundreds of micrometers, well beyond the optical excitation region, and is limited only by the boundaries of the mesa. We show that the condensate density is determined by spin-flipping collisions among the excitons, which convert dark excitons into bright ones. The suppression of this process at low temperature yields a density buildup, manifested as a temperature-dependent blueshift of the exciton emission line. Measurements under an in-plane magnetic field allow us to preferentially modify the bright exciton density and determine their role in the system dynamics. We find that their interaction with the condensate leads to its depletion. We present a simple rate-equations model, which well reproduces the observed temperature, power, and magnetic-field dependence of the exciton density.

Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency

This study aims to improve the emission efficiency of GaInN-based green light-emitting devices (LEDs) using the pre-trimethylindium (TMIn) flow treatment of a quantum well (QW) since we hypothesize that the pre-TMIn flow treatment is able to suppress the incorporation of surface defects (SDs) from the n-type GaN surface into the QWs. For this purpose, first, we investigate the effect of TMIn flow treatment on the SDs in n-type GaN samples by measuring time-resolved photoluminescence. The result of the investigation shows that the TMIn flow treatment effectively deactivated and/or neutralized the SDs from acting as the nonradiative recombination centers. Next, we prepare and investigate the GaInN-based green LEDs employing five pairs of multiple quantum wells (MQWs), in which the number of pre-TMIn treated QWs varies from zero to five. Through the analysis of prepared samples, we demonstrate that the pre-TMIn flow treatment of QWs works effectively in suppressing the SD incorporation into the MQWs, thereby improving the emission intensity.

Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures

In quantum wells (QWs) formed in HgCdTe/CdHgTe heterosystems with a variable composition of Cd(Hg), Shubnikov-de-Haas (SdH) oscillations are investigated to characterize the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure. Several methods of extracting the Rashba spin-splitting at zero magnetic field and their magnetic field dependences from the beatings of SdH oscillations are used for greater reliability. The large and similar Rashba splitting (25–27 meV) is found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H1 subband for the sample with an inverted one.

Red-Shifted Excitation and Two-Photon Pumping of Biointegrated GaInP/AlGaInP Quantum Well Microlasers

Biointegrated intracellular microlasers have emerged as an attractive and versatile tool in biophotonics. Different inorganic semiconductor materials have been used for the fabrication of such biocompatible microlasers but often operate at visible wavelengths ill-suited for imaging through tissue. Here, we report on whispering gallery mode microdisk lasers made from a range of GaInP/AlGaInP multi-quantum well structures with compositions tailored to red-shifted excitation and emission. The selected semiconductor alloys show minimal toxicity and allow the fabrication of lasers with stable single-mode emission in the NIR (675-720 nm) and sub-pJ thresholds. The microlasers operate in the first therapeutic window under direct excitation by a conventional diode laser and can also be pumped in the second therapeutic window using two-photon excitation at pulse energies compatible with standard multiphoton microscopy. Stable performance is observed under cell culturing conditions for 5 days without any device encapsulation. With their bio-optimized spectral characteristics, low lasing threshold, and compatibility with two-photon pumping, AlGaInP-based microlasers are ideally suited for novel cell tagging and in vivo sensing applications.

All-optical control of excitons in semiconductor quantum wells

Applying the Floquet theory, we developed the method to control excitonic properties of semiconductor quantum wells (QWs) by a high-frequency electromagnetic field. It is demonstrated, particularly, that the field induces the blue shift of exciton emission from the QWs and narrows width of the corresponding spectral line. As a consequence, the field strongly modifies optical properties of the QWs and, therefore, can be used to tune characteristics of the optoelectronic devices based on them.

Strong Coupling in Semiconductor Hyperbolic Metamaterials

Semiconductor-based layered hyperbolic metamaterials (HMMs) house high-wavevector volume plasmon polariton (VPP) modes in the infrared spectral range. VPP modes have successfully been exploited in the weak-coupling regime through the enhanced Purcell effect. In this paper, we experimentally demonstrate strong coupling between the VPP modes in a semiconductor HMM and the intersubband transition of epitaxially embedded quantum wells. We observe clear anticrossings in the dispersion curves for the zeroth-, first-, second-, and third-order VPP modes, resulting in upper and lower polariton branches for each mode. This demonstration sets the stage for the creation of novel infrared optoelectronic structures combining HMMs with embedded epitaxial emitter or detector structures.

Negative electron affinity opens quantum well in MgO layers on Ag(100)

Epitaxial MgO films on Ag(100) were studied by photoelectron spectroscopy. From the low-energy part of the spectra we obtain a negative electron affinity of about -0.9 eV. Even though electrons in the lowest conduction band are not confined by a potential barrier at the surface, quantum-well resonances are observed. The dispersion of the conduction band is determined in good agreement with theoretical calculations. Aspects of observing image-potential states predicted by theory on MgO films are discussed.

Optically induced Kondo effect in semiconductor quantum wells

It is demonstrated theoretically that the circularly polarized irradiation of two-dimensional electron systems can induce the localized electron states which antiferromagnetically interact with conduction electrons, resulting in the Kondo effect. Conditions of experimental observation of the effect are discussed for semiconductor quantum wells.

Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

The calculated defect corrections to the polarization and dielectric functions for Bloch electrons in quantum wells are presented. These results were employed to derive the first two moment equations from the Boltzmann transport theory and then applied to explore the role played by defects on the magneto-transport of Bloch electrons. Additionally, we have derived analytically the inverse momentum-relaxation time and mobility tensor for Bloch electrons by making use of the screened defect-corrected polarization function. Based on quantum-statistical theory, we have investigated the defect capture and charging dynamics by employing a parameterized physics-based model for defects to obtain defect wave functions. Both capture and relaxation rates, as well as the density for captured Bloch electrons, were calculated self-consistently as functions of temperature, doping density and chosen defect parameters. By applying the energy-balance equation, the number of occupied energy levels and the chemical potential of defects were determined, with which the transition rate for defect capturing was obtained. By applying these results, the defect energy-relaxation, capture and escape rates, and Bloch-electron chemical potential were calculated self-consistently for a non-canonical subsystem of Bloch electrons. At the same time, the energy- and momentum-relaxation rates of Bloch electrons, as well as the current suppression factor, were also investigated quantitatively. By combining all these results, the temperature dependence of the Hall and longitudinal mobilities was presented for Bloch electrons in either single- or multi-quantum wells.

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QWs has so far not been demonstrated. Here, using high-resolution cathodoluminescence (CL) and a specific sample design, we spatially resolve, image, and analyze nonradiative PDs in InGaN/GaN QWs at the nanoscale. We identify two different types of PDs by their contrasting behavior with temperature and measure their densities from 10¹⁴ cm^-3 to as high as 10¹⁶ cm^-3. Our CL images clearly illustrate the interplay between PDs and carrier dynamics in the well: increasing PD concentration severely limits carrier diffusion lengths, while a higher carrier density suppresses the nonradiative behavior of PDs. The results in this study are readily interpreted directly from CL images and represent a significant advancement in nanoscale PD analysis.

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold voltage. At a certain back gate voltage, transistors operated as normally-off devices. Grating gate transistors with a high gate area demonstrated little subthreshold leakage current, which could be further reduced by the back gate. The low frequency noise measurements indicated identical noise properties and the same trap density responsible for noise when the transistors were controlled by either top or back gates. This result was explained by the tunneling of electrons to the traps in AlGaN as the main noise mechanism. The trap density extracted from the noise measurements was similar or less than that reported in the majority of publications on regular AlGaN/GaN transistors.

Photon Statistics of Incoherent Cathodoluminescence with Continuous and Pulsed Electron Beams

Photon bunching in incoherent cathodoluminescence (CL) spectroscopy originates from the fact that a single high-energy electron can generate multiple photons when interacting with a material, thus, revealing key properties of electron-matter excitation. Contrary to previous works based on Monte Carlo modeling, here we present a fully analytical model describing the amplitude and shape of the second order autocorrelation function (g ⁽²⁾(τ)) for continuous and pulsed electron beams. Moreover, we extend the analysis of photon bunching to ultrashort electron pulses, in which up to 500 electrons per pulse excite the sample within a few picoseconds. We obtain a simple equation relating the bunching strength (g ⁽²⁾(0)) to the electron beam current, emitter decay lifetime, pulse duration, in the case of pulsed electron beams, and electron excitation efficiency (γ), defined as the probability that an electron creates at least one interaction with the emitter. The analytical model shows good agreement with the experimental data obtained on InGaN/GaN quantum wells using continuous, ns-pulsed (using beam blanker) and ultrashort ps-pulsed (using photoemission) electron beams. We extract excitation efficiencies of 0.13 and 0.05 for 10 and 8 keV electron beams, respectively, and we observe that nonlinear effects play no compelling role, even after excitation with ultrashort and dense electron cascades in the quantum wells.

The drag of photons by electric current in quantum wells

The flow of electric current in quantum well breaks the space inversion symmetry, which leads to the dependence of the radiation transmission on the relative orientation of current and photon wave vector, this phenomenon can be named current drag of photons. We have developed a microscopic theory of such an effect for intersubband transitions in quantum wells taking into account both depolarization and exchange-correlation effects. It is shown that the effect of the current drag of photons originates from the asymmetry of intersubband optical transitions due to the redistribution of electrons in momentum space. We show that the presence of dc electric current leads to the shift of intersubband resonance position and affects both transmission coefficient and absorbance in quantum wells.

Stability of electron-hole liquid in quantum wells

Density functional theory is used to calculate the energy of electron-hole liquid and the equilibrium density of electron-hole pairs in quantum wells. Nonlinear Kohn-Sham equations for electrons and holes are solved numerically. The influence of the depth and width of the quantum well, the ratio of the hole and electron masses, and the spin splitting of the hole band on the properties of electron-hole liquid is studied. The critical temperature of electron-hole liquid in quantum wells is estimated. Good agreement between the calculations and experimental results is obtained.

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO₂ mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

Quantifying Exciton Heterogeneities in Mixed-Phase Organometal Halide Multiple Quantum Wells via Stark Spectroscopy Studies

Solution-processable two-dimensional (2D) organic-inorganic hybrid perovskite (OIHP) quantum wells naturally self-assemble through weak van der Waals forces. In this study, we investigate the structural and optoelectronic properties of 2D-layered butylammonium (C₄H₉NH₃⁺, BA⁺) methylammonium (CH₃NH₃⁺, MA) lead iodide, (BA)₂(MA)_n-1Pb_nI_3n+1 quantum wells with varying n from 1 to 4. Through conventional structural characterization, (BA)₂(MA)_n-1Pb_nI_3n+1 thin films showcase high-quality phase (n) purity. However, while investigating the optoelectronic properties, it is clear that these van der Waals heterostructures consist of multiple quantum well thicknesses coexisting within a single thin film. We utilized electroabsorption spectroscopy and Liptay theory to develop an analytical tool capable of deconvoluting the excitonic features that arise from different quantum well thicknesses (n) in (BA)₂(MA)_n-1Pb_nI_3n+1 thin films. To obtain a quantitative assessment of exciton heterogeneities within a thin film comprising multiple quantum well structures, exciton resonances quantified by absorption spectroscopy were modeled as Gaussian features to yield various theory-generated electroabsorption spectra, which were then fit to our experimental electroabsorption features. In addition to identifying the quantum well heterostructures present within a thin film, this novel analytical tool provides powerful insights into the exact exciton composition and can be utilized to analyze the optoelectronic properties of many other mixed-phase quantum well heterostructures beyond those formed by OIHPs. Our findings may help in designing more efficient and reproducible light-emitting diodes based on 2D mixed-phase metal-organic multiple quantum wells.

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

Dimensional Tailoring of Ultrahigh Vacuum Annealing-Assisted Quantum Wells for the Efficiency Enhancement of Perovskite Light-Emitting Diodes

Quasi-two-dimensional (Q-2D) perovskites featured with multidimensional quantum wells (QWs) have been the main candidates for optoelectronic applications. However, excessive low-dimensional perovskites are unfavorable to the device efficiency due to the phonon-exciton interaction and the inclusion of insulating large organic cations. Herein, the formation of low-dimensional QWs is suppressed by removing the organic cation 1-naphthylmethylamine iodide (NMAI) through ultrahigh vacuum (UHV) annealing. Perovskite light-emitting diode (PLED) devices based on films annealed with optimized UHV conditions show a higher external quantum efficiency (EQE) of 13.0% and wall-plug efficiency of 11.1% compared to otherwise identical devices with films annealed in a glovebox.

Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls

Different types of buffer layers such as InGaN underlayer (UL) and InGaN/GaN superlattices are now well-known to significantly improve the efficiency of c-plane InGaN/GaN-based light-emitting diodes (LEDs). The present work investigates the role of two different kinds of pregrowth layers (low In-content InGaN UL and GaN UL namely "GaN spacer") on the emission of the core-shell m-plane InGaN/GaN single quantum well (QW) grown around Si-doped c̅-GaN microwires obtained by silane-assisted metal organic vapor phase epitaxy. According to photo- and cathodoluminescence measurements performed at room temperature, an improved efficiency of light emission at 435 nm with internal quantum efficiency >15% has been achieved by adding a GaN spacer prior to the growth of QW. As revealed by scanning transmission electron microscopy, an ultrathin residual layer containing Si located at the wire sidewall surfaces favors the formation of high density of extended defects nucleated at the first InGaN QW. This contaminated residual incorporation is buried by the growth of the GaN spacer and avoids the structural defect formation, therefore explaining the improved optical efficiency. No further improvement is observed by adding the InGaN UL to the structure, which is confirmed by comparable values of the effective carrier lifetime estimated from time-resolved experiments. Contrary to the case of planar c-plane QW where the improved efficiency is attributed to a strong decrease of point defects, the addition of an InGaN UL seems to have no influence in the case of radial m-plane QW.

Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1-xSb Quantum Wells

Structure dependent differential tunneling conductance, dI/dV, profiles obtained using scanning tunneling microscopy on both (110)-cleaved surfaces and (001)-growth surfaces in InAs/GaSb and InAs/In_xGa_1-xSb quantum wells (QWs), which are platforms of two-dimensional topological insulator (2D-TI), clearly demonstrated the edge states formed on the 2D-TI surfaces. The results were confirmed by kp-based electronic structure calculations, which demonstrated that the edge states extended to the 10 nm range from cleaved surfaces generated in the appropriately designed InAs/(In)GaSb QW systems.

Compositional Control in 2D Perovskites with Alternating Cations in the Interlayer Space for Photovoltaics with Efficiency over 18

2D perovskites stabilized by alternating cations in the interlayer space (ACI) represent a very new entry as highly efficient semiconductors for solar cells approaching 15% power conversion efficiency (PCE). However, further improvements will require understanding of the nature of the films, e.g., the thickness distribution and charge-transfer characteristics of ACI quantum wells (QWs), which are currently unknown. Here, efficient control of the film quality of ACI 2D perovskite (GA)(MA)_n Pb_n I_{3 n +1} (〈n〉 = 3) QWs via incorporation of methylammonium chloride as an additive is demonstrated. The morphological and optoelectronic characterizations unambiguously demonstrate that the additive enables a larger grain size, a smoother surface, and a gradient distribution of QW thickness, which lead to enhanced photocurrent transport/extraction through efficient charge transfer between low-n and high-n QWs and suppressed nonradiative charge recombination. Therefore, the additive-treated ACI perovskite film delivers a champion PCE of 18.48%, far higher than the pristine one (15.79%) due to significant improvements in open-circuit voltage and fill factor. This PCE also stands as the highest value for all reported 2D perovskite solar cells based on the ACI, Ruddlesden-Popper, and Dion-Jacobson families. These findings establish the fundamental guidelines for the compositional control of 2D perovskites for efficient photovoltaics.

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

Spontaneous Self-Assembly of Cesium Lead Halide Perovskite Nanoplatelets into Cuboid Crystals with High Intensity Blue Emission

Colloidal all-inorganic perovskite nanocrystals have gained significant attention as a promising material for both fundamental and applied research due to their excellent emission properties. However, reported photoluminescence quantum yields (PL QYs) of blue-emitting perovskite nanocrystals are rather low, mostly due to the fact that the high energy excitons for such wide bandgap materials are easily captured by interband traps, and then decay nonradiatively. In this work, it is demonstrated how to tackle this issue, performing self-assembly of 2D perovskite nanoplatelets into larger size (≈50 nm × 50 nm × 20 nm) cuboid crystals. In these structures, 2D nanoplatelets being isolated from each other within the cuboidal scaffold by organic ligands constitute multiple quantum wells, where exciton localization on potential disorder sites helps them to bypass nonradiative channels present in other platelets. As a result, the cuboid crystals show an extremely high PL QY of 91% of the emission band centered at 480 nm. Moreover, using the same synthetic method, mixed-anion CsPb(Br/Cl)3 cuboid crystals with blue emission peaks ranging from 452 to 470 nm, and still high PL QYs in the range of 72-83% are produced.

Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide

Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems are complex while imaging methods may suffice for binary or simple ternary compounds where atomic intermixing is restricted to one type of sub-lattice. The emphasis on methodology should assist microscopists in evaluating and quantifying signals from electron micrographs and related spectroscopic data. Examples presented include CdS/ZnS core/shell particles and SiGe, InGaAs and InGaN quantum wells.

Nitride-Based Microarray Biochips: A New Route of Plasmonic Imaging

The desire to improve human lives has led to striking development in biosensing technologies. While the ongoing research efforts are mostly dedicated to enhancing speed and sensitivity of the sensor, a third consideration that has become increasingly important is compactness, which is strongly desired in emergency situations and personal health management. Surface plasmon resonance imaging (SPRi) is one of the few techniques that can potentially fulfill all the three goals, considering its multiplexed assay capability. However, miniaturizing SPRi biosensors remains elusive as it entails complicated optical gears. Here, we significantly slim the architecture of SPRi devices by visualizing the varied local density of states around analytes. The unusual detection scheme is realized by building a gain-assisted SPRi with InGaN quantum wells (QWs), where the QW-plasmon coupling efficiency hinges on localized refractive index variation. This new modality abolishes the prism, the polarizer, and the beam-tracking components in the most used Kretschmann configuration without compromising the performances.

Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

Quantum Confinement in Oxide Heterostructures: Room-Temperature Intersubband Absorption in SrTiO3/LaAlO3 Multiple Quantum Wells

The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO₃/LaAlO₃ (STO/LAO) system has been studied extensively in the hopes of using the interfacial two-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy and electron energy loss spectroscopy is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

In this work, we analyse the microstructure and local chemical composition of green-emitting In_x Ga_1-x N/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.

Hot-Carrier-Mediated Photon Upconversion in Metal-Decorated Quantum Wells

Manipulating the frequency of electromagnetic waves forms the core of many modern technologies, ranging from imaging and spectroscopy to radio and optical communication. The process of converting photons from higher to lower energy is easily accomplished and technologically widespread. However, upconversion, which is the process of converting lower-energy photons into higher-energy photons, is still a growing field of study with nascent applications and burgeoning interest. Here, we experimentally demonstrate a new photon upconversion technique mediated by hot carriers in plasmonic nanostructures. Hot holes and hot electrons generated via plasmon decay in illuminated metal nanoparticles are injected into an adjacent semiconductor quantum well where they radiatively recombine to emit higher-energy photons. Using GaN/InGaN quantum wells decorated with gold and silver nanoparticles, we show photon upconversion from 2.4 to 2.8 eV. The process scales linearly with illumination power and enables both geometry- and polarization-based tunability. The conversion of plasmonic losses into upconverted optical emission has the potential to impact bioimaging, on-chip wavelength conversion, and high-efficiency photovoltaics.

Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires

The fabrication of nanowires with axial multiquantum wells or disks presenting a homogeneous size and shape distribution along the whole stack is still an unresolved challenge, despite being essential for narrowing their light emission bandwidth. In this work we demonstrate that the commonly observed change in the shape of the disks along the stacking direction proceeds in a systematic, predictable way. High- resolution transmission electron microscopy of stacked (In,Ga)N quantum discs embedded in GaN nanowires with diameters of ∼40 nm and lengths of ∼700 nm and finite element method calculations show that, contrary to what is normally assumed, this change is not related to the radial growth of the nanowires, which is shown to be negligible, but to the strain relaxation of the whole active region. A simple model is proposed to account for the experimental observations. The model assumes that each disk reaches an equilibrium shape that minimizes the overall energy of the system, given by the sum of the surface and strain energies of the disk itself and the barrier below. The strain state of the barrier is affected by the presence of the disk buried directly below in a way that depends on its shape. This gives rise to a cumulative process, which makes the aspect ratio of each quantum disk to be smaller compared to the disk grown just before, in qualitative agreement with the experimental observations. The obtained results imply that strain relaxation is an important factor to bear in mind for the design of multiquantum disks with controlled shape along the stacking direction in any lattice mismatched nanowire system.

Infrared imaging: a potential powerful tool for neuroimaging and neurodiagnostics

Infrared (IR) imaging is used to detect the subtle changes in temperature needed to accurately detect and monitor disease. Technological advances have made IR a highly sensitive and reliable detection tool with strong potential in medical and neurophotonics applications. An overview of IR imaging specifically investigating quantum well IR detectors developed at Jet Propulsion Laboratory for a noninvasive, nonradiating imaging tool is provided, which could be applied for neuroscience and neurosurgery where it involves sensitive cellular temperature change.

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

We report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells grown on nonpolar ([Formula: see text]) a-plane and ([Formula: see text]) m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are broad with full width at half maximum height increasing from 81 to 330 meV as the In fraction increases. Photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-bands to lie in the range of 23-54 meV for the a- and m-plane samples in which we could observe distinct exciton features. Thus the thermal occupation of a higher valence sub-band cannot be responsible for the reduction of the degree of linear polarisation at 10 K. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which is at least partly responsible for the reduction in the degree of linear polarisation.

Sub-Picosecond Auger-Mediated Hole-Trapping Dynamics in Colloidal CdSe/CdS Core/Shell Nanoplatelets

Quasi-two-dimensional colloidal nanoplatelets (NPLs) have recently emerged as a class of semiconductor nanomaterials whose atomically precise monodisperse thicknesses give rise to narrow absorption and emission spectra. However, the sub-picosecond carrier dynamics of NPLs at the band edge remain largely unknown, despite their importance in determining the optoelectronic properties of these materials. Here, we use a combination of femtosecond transient absorption spectroscopy and nonadiabatic molecular dynamics simulations to investigate the early time carrier dynamics of CdSe/CdS core/shell NPLs. Band-selective probing reveals sub-picosecond Auger-mediated trapping of holes with an effective second-order rate constant of 3.5 ± 1.0 cm²/s. Concomitant spectral blue shifts that are indicative of Auger hole heating are found to occur on the same time scale as the sub-picosecond trapping dynamics, whereas spectral red shifts that emerge at low excitation densities furnish an electron-cooling time scale of 0.84 ± 0.09 ps. Finally, nonadiabatic molecular dynamics simulations relate the observed sub-picosecond Auger-mediated hole-trapping dynamics to a shallow trap state that originates from the incomplete passivation of dangling bonds on the NPL surface.

Distance dependence of the energy transfer rate from a single semiconductor nanostructure to graphene

The near-field Coulomb interaction between a nanoemitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. Here, we investigate the distance dependence of the energy transfer rate from individual, (i) zero-dimensional CdSe/CdS nanocrystals and (ii) two-dimensional CdSe/CdS/ZnS nanoplatelets to a graphene monolayer. For increasing distances d, the energy transfer rate from individual nanocrystals to graphene decays as 1/d(4). In contrast, the distance dependence of the energy transfer rate from a two-dimensional nanoplatelet to graphene deviates from a simple power law but is well described by a theoretical model, which considers a thermal distribution of free excitons in a two-dimensional quantum well. Our results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.

Understanding quantum confinement of charge carriers in layered 2D hybrid perovskites

Layered hybrid organic perovskites (HOPs) structures are a class of low-cost two-dimensional materials that exhibit outstanding optical properties, related to dielectric and quantum confinement effects. Whereas modeling and understanding of quantum confinement are well developed for conventional semiconductors, such knowledge is still lacking for 2D HOPs. In this work, concepts of effective mass and quantum well are carefully investigated and their applicability to 2D HOPs is discussed. For ultrathin layers, the effective-mass model fails. Absence of superlattice coupling and importance of non-parabolicity effects prevents the use of simple empirical models based on effective masses and envelope function approximations. An alternative method is suggested in which 2D HOPs are treated as composite materials, and a first-principles approach to the calculation of band offsets is introduced. These findings might also be relevant for other classes of layered 2D functional materials.

An organic quantum well based on high-quality crystalline heteroepitaxy films

A meaningful organic quantum well based on crystalline heteroepitaxy films is constructed. The quantum confinement effect is demonstrated by its reflections on optics and electrics: the blueshift of the optical characteristic peaks and the negative differential resistance at room temperature. The realization of an organic quantum well indicates the highly delocalized transport mechanism in well-defined organic crystalline systems and promises novel organic "quantum" optoelectronic devices.

Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells

Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E0, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E0 = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.