NiSi: New Venue for Antiferromagnetic Spintronics

Envisaging antiferromagnetic spintronics pivots on two key criteria of high transition temperature and tuning of underlying magnetic order using straightforward application of magnetic field or electric current. Here, we show that NiSi metal can provide suitable new platform in this quest. First, our study unveils high temperature antiferromagnetism in single crystal NiSi with T_N ⩾ 700 K. Antiferromagnetic order in NiSi is accompanied by the non-centrosymmetric magnetic character with small ferromagnetic component in a-c plane. Second, we find that NiSi manifests distinct magnetic and electronic hysteresis responses to field applications due to the disparity in two moment directions. While magnetic hysteresis is characterized by one-step switching between ferromagnetic states of uncompensated moment, electronic behavior is ascribed to metamagnetic switching phenomena between non-collinear spin configurations. Importantly, the switching behaviors persist to high temperature. The properties underscore the importance of NiSi in the pursuit of antiferromagnetic spintronics. This article is protected by copyright. All rights reserved.

Competing Magnetic Interactions and Field-Induced Metamagnetic Transition in Highly Crystalline Phase-Tunable Iron Oxide Nanorods

The inherent existence of multi phases in iron oxide nanostructures highlights the significance of them being investigated deliberately to understand and possibly control the phases. Here, the effects of annealing at 250 °C with a variable duration on the bulk magnetic and structural properties of high aspect ratio biphase iron oxide nanorods with ferrimagnetic Fe₃O₄ and antiferromagnetic α-Fe₂O₃ are explored. Increasing annealing time under a free flow of oxygen enhanced the α-Fe₂O₃ volume fraction and improved the crystallinity of the Fe₃O₄ phase, identified in changes in the magnetization as a function of annealing time. A critical annealing time of approximately 3 h maximized the presence of both phases, as observed via an enhancement in the magnetization and an interfacial pinning effect. This is attributed to disordered spins separating the magnetically distinct phases which tend to align with the application of a magnetic field at high temperatures. The increased antiferromagnetic phase can be distinguished due to the field-induced metamagnetic transitions observed in structures annealed for more than 3 h and was especially prominent in the 9 h annealed sample. Our controlled study in determining the changes in volume fractions with annealing time will enable precise control over phase tunability in iron oxide nanorods, allowing custom-made phase volume fractions in different applications ranging from spintronics to biomedical applications.

Nitrogen-Based Magneto-ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures

Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid-state magneto-ionic means is highly appealing as it may allow reconfigurable electronics by transforming the all-important FM/AF interfaces through ionic migration. In this work, we demonstrate an approach that combines the chemically induced magneto-ionic effect with the electric field driving of nitrogen in the Ta/Co0.7Fe0.3/MnN/Ta structure to electrically manipulate exchange bias. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias of 618 Oe at 300 K and 1484 Oe at 10 K is observed, which can be further enhanced after a voltage conditioning by 5 and 19%, respectively. This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta capping layer cause the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies. These results demonstrate an effective nitrogen-ion based magneto-ionic manipulation of exchange bias in solid-state devices.

300-Times-Increased Diffusive Skyrmion Dynamics and Effective Pinning Reduction by Periodic Field Excitation

Thermally induced skyrmion dynamics, as well as skyrmion pinning effects, in thin films have attracted significant interest. While pinning poses challenges in deterministic skyrmion devices and slows down skyrmion diffusion, for applications in non-conventional computing, both pinning of an appropriate strength and skyrmion diffusion speed are key. Here, periodic field excitations are employed to realize an increase of the skyrmion diffusion by more than two orders of magnitude. Amplifying the excitation, a drastic reduction of the effective skyrmion pinning, is reported, and a transition from pinning-dominated diffusive hopping to dynamics approaching free diffusion is observed. By tailoring the field oscillation frequency and amplitude, a continuous tuning of the effective pinning and skyrmion dynamics is demonstrated, which is a key asset and enabler for non-conventional computing applications. It is found that the periodic excitations additionally allow stabilization of skyrmions at different sizes for field values that are inaccessible in static systems, opening up new approaches to ultrafast skyrmion motion by transiently exciting moving skyrmions.

Enhanced Spin Current in Ni81 Fe19 /Cu-CuOx Bilayer with Top and Sideways Oxidization

Generation and manipulation of spin current are the cores of spintronic devices, which are intensely pursued. Heavy metals with strong spin-orbit coupling are commonly used for the generation of spin current, but are incompatible with the mass production of devices, and the polarization of spin current is limited to be in-plane. Here, it is shown that the spin current with strong out-of-plane polarization component can be generated and transmitted in Ni₈₁ Fe₁₉ /Cu-CuO_x bilayer with sideways and top oxidizations. The charge-to-spin current conversion efficiency can be enhanced through the spin currents consisting of both out-of-plane polarization (σ_z ) and in-plane polarization (σ_y ) induced by spin-vorticity coupling. Such a spin current is demonstrated to be closely related to the lateral oxidization gradient and can be controlled by changing the temperatures and times of annealing. The finding here provides a novel degree of freedom to produce and control the spin current in spintronic devices.

Spinful hinge states in the higher-order topological insulators WTe2

Higher-order topological insulators are recently discovered quantum materials exhibiting distinct topological phases with the generalized bulk-boundary correspondence. T_d-WTe₂ is a promising candidate to reveal topological hinge excitation in an atomically thin regime. However, with initial theories and experiments focusing on localized one-dimensional conductance only, no experimental reports exist on how the spin orientations are distributed over the helical hinges-this is critical, yet one missing puzzle. Here, we employ the magneto-optic Kerr effect to visualize the spinful characteristics of the hinge states in a few-layer T_d-WTe₂. By examining the spin polarization of electrons injected from WTe₂ to graphene under external electric and magnetic fields, we conclude that WTe₂ hosts a spinful and helical topological hinge state protected by the time-reversal symmetry. Our experiment provides a fertile diagnosis to investigate the topologically protected gapless hinge states, and may call for new theoretical studies to extend the previous spinless model.

Emission of coherent THz magnons in an antiferromagnetic insulator triggered by ultrafast spin-phonon interactions

Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low damping thin films of NiO/Pt. We evidence, experimentally and through modeling, two excitation processes of spin dynamics in NiO: an off-resonant instantaneous optical spin torque in (111) oriented films and a strain-wave-induced THz torque induced by ultrafast Pt excitation in (001) oriented films. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials.

Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets

Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic Fe_xTb_1-x layers decrease and vanish upon approaching the magnetic compensation point because the rate of spin transfer to the magnetization becomes much slower than the rate of spin relaxation into the crystal lattice due to spin-orbit scattering. These results indicate that the relative rates of competing spin relaxation processes within magnetic layers play a critical role in determining the strength of SOTs, which provides a unified understanding for the diverse and even seemingly puzzling SOT phenomena in ferromagnetic and compensated systems. Our work indicates that spin-orbit scattering within the magnet should be minimized for efficient SOT devices. We also find that the interfacial spin-mixing conductance of interfaces of ferrimagnetic alloys (such as Fe_xTb_1-x) is as large as that of 3d ferromagnets and insensitive to the degree of magnetic compensation.

Theoretical studies on electronic, magnetic and optical properties of two dimensional transition metal trihalides

Two dimensional transition metal trihalides have drawn attention over the years due to their intrinsic ferromagnetism and associated large anisotropy at nanoscale. The interactions involved in these layered structures are of van der Waals types which are important for exfoliation to different thin samples. This enables one to compare the journey of physical properties from bulk structures to monolayer counterpart. In this topical review, the modulation of electronic, magnetic and optical properties by strain engineering, alloying, doping, defect engineering etc have been discussed extensively. The results obtained by first principle density functional theory calculations are verified by recent experimental observations. The relevant experimental synthesis of different morphological transition metal trihalides are highlighted. The feasibility of such routes may indicate other possible heterostructures. Apart from spintronics based applications, transition metal trihalides are potential candidates in sensing and data storage. Moreover, high thermoelectric figure of merit of chromium trihalides at higher temperatures leads to the possibility of multi-purpose applications. We hope this review will give important directions to further research in transition metal trihalide systems having tunable band gap with reduced dimensionalities.

Hybrid spin Hall nano-oscillators based on ferromagnetic metal/ferrimagnetic insulator heterostructures

Spin-Hall nano-oscillators (SHNOs) are promising spintronic devices to realize current controlled GHz frequency signals in nanoscale devices for neuromorphic computing and creating Ising systems. However, traditional SHNOs devices based on transition metals have high auto-oscillation threshold currents as well as low quality factors and output powers. Here we demonstrate a new type of hybrid SHNO based on a permalloy (Py) ferromagnetic-metal nanowire and low-damping ferrimagnetic insulator, in the form of epitaxial lithium aluminum ferrite (LAFO) thin films. The superior characteristics of such SHNOs are associated with the excitation of larger spin-precession angles and volumes. We further find that the presence of the ferrimagnetic insulator enhances the auto-oscillation amplitude of spin-wave edge modes, consistent with our micromagnetic modeling. This hybrid SHNO expands spintronic applications, including providing new means of coupling multiple SHNOs for neuromorphic computing and advancing magnonics.

Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a ²⁸Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick ²⁸Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz^½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Spin filters based on two-dimensional materials Co2Si and Cu2Si

Spintronic devices have several advantages compared with conventional electronic devices, including non-volatility, faster data processing speed, higher integration densities, less electric power consumption and so on. However, we still face challenges for efficiently generating and injecting pure spin polarized current. In this work, we utilize two kinds of two-dimensional materials Co2Si and Cu2Si with both lattice match and band match to construct devices and then research their spin filter efficiency. The spin filter efficiency can be improved effectively either by an appropriate gate voltage at Co2Si region, or by series connection. In both cases the filter efficiencies are much larger than two-dimensional prepared Fe3GeTe2spin valve and ferromagnetic metallic chairlike O-graphene-H. Also at a quite small bias, we obtain a comparable spin polarized current as those obtained in Fe3GeTe2spin valve and O-graphene-H obtained at a much larger bias.

Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy

The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced. With the spatially uniform control of magnetic anisotropy, the shape and topology of a skyrmion when passing the controlled area can be maintained. The findings will open a new route toward the design and realization of skyrmion-based spintronic devices in the near future.

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m² was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3 [Formula: see text] A/cm².

Spin-flip-driven anomalous Hall effect and anisotropic magnetoresistance in a layered Ising antiferromagnet

The influence of magnetocrystalline anisotropy in antiferromagnets is evident in a spin flip or flop transition. Contrary to spin flops, a spin-flip transition has been scarcely presented due to its specific condition of relatively strong magnetocrystalline anisotropy and the role of spin-flips on anisotropic phenomena has not been investigated in detail. In this study, we present antiferromagnet-based functional properties on an itinerant Ising antiferromagnet Ca_0.9Sr_0.1Co₂As₂. In the presence of a rotating magnetic field, anomalous Hall conductivity and anisotropic magnetoresistance are demonstrated, the effects of which are maximized above the spin-flip transition. Moreover, a joint experimental and theoretical study is conducted to provide an efficient tool to identify various spin states, which can be useful in spin-processing functionalities.

Supercritical CO2 -induced New Chemical Bond of C-O-Si in Graphdiyne to Achieve Robust Room-Temperature Ferromagnetism

The realization of ferromagnetic ordering of two-dimensional (2D) carbon material graphdiyne (GDY) has attracted great attention due to its promising application in spin semiconductor devices. However, the absence of localized spins makes the pristine GDY intrinsically nonferromagnetic. Herein, we report the realization of robust room-temperature (RT) ferromagnetism (FM) with Curie temperature (T_C ) up to 325 K for GDY Nanosheets (GDYNs) by supercritical CO₂ (SC CO₂ ). Experimental and theoretical calculations reveal that the new chemical bond of C-O-Si can be formed because of the unique effect of SC CO₂ , which help to enhance the charge transfer and generates long-range ferromagnetic order. The RT saturation magnetization (M_S ) reaches 1.125 emu/g, which is much higher than that of carbon-based materials reported up to now. Meanwhile, by changing the conditions of SC CO₂ such as pressure, ferromagnetic responses can be manipulated, which is great for potential spintronics applications of GDY.

Long-lived electronic spin qubits in single-walled carbon nanotubes

Electron spins in solid-state systems offer the promise of spin-based information processing devices. Single-walled carbon nanotubes (SWCNTs), an all-carbon one-dimensional material whose spin-free environment and weak spin-orbit coupling promise long spin coherence times, offer a diverse degree of freedom for extended range of functionality not available to bulk systems. A key requirement limiting spin qubit implementation in SWCNTs is disciplined confinement of isolated spins. Here, we report the creation of highly confined electron spins in SWCNTs via a bottom-up approach. The record long coherence time of 8.2 µs and spin-lattice relaxation time of 13 ms of these electronic spin qubits allow demonstration of quantum control operation manifested as Rabi oscillation. Investigation of the decoherence mechanism reveals an intrinsic coherence time of tens of milliseconds. These findings evident that combining molecular approaches with inorganic crystalline systems provides a powerful route for reproducible and scalable quantum materials suitable for qubit applications.

Room-temperature spin injection from a ferromagnetic semiconductor

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

Trapping and manipulating skyrmions in two-dimensional films by surface acoustic waves

Skyrmions, topologically stable spin structures with particle-like properties, are promising for spintronics applications such as skyrmion racetrack memory. Though reliable control of skyrmion motion is essential for the operation of spintronics devices, the straight motion of skyrmions along the driving force is in general difficult due to an inevitable transverse force originating from their topology. Here, we propose a method of precise manipulation of skyrmions based on surface acoustic waves (SAWs) propagating in two dimensions. Using two standing SAWs, saddle-shape local potentials like quadrupole ion traps are created to trap skyrmions robustly. Furthermore, by tuning the frequencies of the SAWs, we show that trapped skyrmions not only move in straight lines but also move precisely in any direction in a two-dimensional thin film. These results could be helpful for the future design of spintronics devices based on skyrmions.

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interest. However, the all-electrical control of such systems at room temperature, a crucial step toward practical application, has not been reported. Here, using a small writing current density of around 5 × 10⁶ A·cm^-2, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn₃Sn, with a strong readout signal at room temperature in the Si/SiO₂/Mn₃Sn/AlO_x structure, and without external magnetic field or injected spin current. Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn₃Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

Recent Progress of Organic Semiconductor Materials in Spintronics

Spintronics, a new discipline focusing on the spin-dependent transport process of electrons, has been developing rapidly. Spin valves are the most significant carriers of spintronics utilizing the spin freedom of electrons. It is expected to pierce "Moore's Law" and become the core component in processors of the next generation. Organic semiconductors advance in their adjustable band gap, weak spin-orbit coupling and hyperfine interaction, excellent film-forming property, having enormous promise for spin valves. Here, the principle of spin valves is introduced, and the history and progress in organic spin injection and transport materials are summarized. Then we analyze the influence of spinterface on device performance and introduce reliable methods of constructing organic spin valves. Finally, the challenges for spin valves are discussed, and the future is proposed. We aim to draw the attention of researchers to organic spin valves and promote further research in spintronics through this paper.

The importance of the interface for picosecond spin pumping in antiferromagnet-heavy metal heterostructures

Interfaces in heavy metal (HM) - antiferromagnetic insulator (AFI) heterostructures have recently become highly investigated and debated systems in the effort to create spintronic devices that function at terahertz frequencies. Such heterostructures have great technological potential because AFIs can generate sub-picosecond spin currents which the HMs can convert into charge signals. In this work we demonstrate an optically induced picosecond spin transfer at the interface between AFIs and Pt using time-domain THz emission spectroscopy. We select two antiferromagnets in the same family of fluoride cubic perovskites, KCoF₃ and KNiF₃, whose magnon frequencies at the centre of the Brillouin zone differ by an order of magnitude. By studying their behaviour with temperature, we correlate changes in the spin transfer efficiency across the interface to the opening of a gap in the magnon density of states below the Néel temperature. Our observations are reproduced in a model based on the spin exchange between the localized electrons in the antiferromagnet and the free electrons in Pt. Through this comparative study of selected materials, we are able to shine light on the microscopy of spin transfer at picosecond timescales between antiferromagnets and heavy metals and identify a key figure of merit for its efficiency: the magnon gap. Our results are important for progressing in the fundamental understanding of the highly discussed physics of the HM/AFI interfaces, which is the necessary cornerstone for the designing of femtosecond antiferromagnetic spintronics devices with optimized characteristics.

Optical Creation of Skyrmions by Spin Reorientation Transition in Ferrimagnetic CoHo Alloys

Manipulating magnetic skyrmions by means of a femtosecond (fs) laser pulse has attracted great interest due to their promising applications in efficient information-storage devices with ultralow energy consumption. However, the mechanism underlying the creation of skyrmions induced by an fs laser is still lacking. As a result, a key challenge is to reveal the pathway for the massive reorientation of magnetization from trivial to nontrivial topological states. Here, we studied a series of ferrimagnetic CoHo alloys and investigated the effect of a single laser pulse on the magnetic states. Thanks to the time-resolved magneto-optical Kerr effect and imaging techniques, we demonstrate that the laser-induced phase transitions from single domains into a topological skyrmion phase are mediated by the transient in-plane magnetization state, in real time and space domains, respectively. Combining experiments and micromagnetic simulations, we propose a two-step process for creating skyrmions through laser pulse irradiation: (i) the electron temperature enhancement induces a spin reorientation transition on a picosecond (ps) timescale due to the suppression of perpendicular magnetic anisotropy (PMA) and (ii) the PMA slowly restores, accompanied by out-of-plane magnetization recovery, leading to the generation of skyrmions with the help of spin fluctuations. This work provides a route to control skyrmion patterns using an fs laser, thereby establishing the foundation for further exploration of topological magnetism at ultrafast timescales.

Ultrafast Coherent THz Lattice Dynamics Coupled to Spins in the van der Waals Antiferromagnet FePS3

Coherent THz optical lattice and hybridized phonon-magnon modes are triggered by femtosecond laser pulses in the antiferromagnetic van der Waals semiconductor FePS₃ . The laser-driven lattice and spin dynamics are investigated in a bulk crystal as well as in a 380 nm-thick exfoliated flake as a function of the excitation photon energy, sample temperature and applied magnetic field. The pump-probe magneto-optical measurements reveal that the amplitude of a coherent phonon mode oscillating at 3.2 THz decreases as the sample is heated up to the Néel temperature. This signal eventually vanishes as the phase transition to the paramagnetic phase occurs, thus revealing its connection to the long-range magnetic order. In the presence of an external magnetic field, the optically triggered 3.2 THz phonon hybridizes with a magnon mode, which is utilized to excite the hybridized phonon-magnon mode optically. These findings open a pathway toward the optical control of coherent THz photo-magnonic dynamics in a van der Waals antiferromagnet, which can be scaled down to the 2D limit.

Broadband microwave detection using electron spins in a hybrid diamond-magnet sensor chip

Quantum sensing has developed into a main branch of quantum science and technology. It aims at measuring physical quantities with high resolution, sensitivity, and dynamic range. Electron spins in diamond are powerful magnetic field sensors, but their sensitivity in the microwave regime is limited to a narrow band around their resonance frequency. Here, we realize broadband microwave detection using spins in diamond interfaced with a thin-film magnet. A pump field locally converts target microwave signals to the sensor-spin frequency via the non-linear spin-wave dynamics of the magnet. Two complementary conversion protocols enable sensing and high-fidelity spin control over a gigahertz bandwidth, allowing characterization of the spin-wave band at multiple gigahertz above the sensor-spin frequency. The pump-tunable, hybrid diamond-magnet sensor chip opens the way for spin-based gigahertz material characterizations at small magnetic bias fields.

Accelerating ultrafast magnetization reversal by non-local spin transfer

When exciting a magnetic material with a femtosecond laser pulse, the amplitude of magnetization is no longer constant and can decrease within a time scale comparable to the duration of the optical excitation. This ultrafast demagnetization can even trigger an ultrafast, out of equilibrium, phase transition to a paramagnetic state. The reciprocal effect, namely an ultrafast remagnetization from the zero magnetization state, is a necessary ingredient to achieve a complete ultrafast reversal. However, the speed of remagnetization is limited by the universal critical slowing down which appears close to a phase transition. Here we demonstrate that magnetization can be reversed in a few hundreds of femtoseconds by overcoming the critical slowing down thanks to ultrafast spin cooling and spin heating mechanisms. We foresee that these results outline the potential of ultrafast spintronics for future ultrafast and energy efficient magnetic memory and storage devices. Furthermore, this should motivate further theoretical works in the field of femtosecond magnetization reversal.

Influence of Dzyaloshinskii-Moriya interaction and perpendicular anisotropy on spin waves propagation in stripe domain patterns and spin spirals

Texture-based magnonics focuses on the utilization of spin waves in magnetization textures to process information. Using micromagnetic simulations, we study how (1) the dynamic magnetic susceptibility, (2) dispersion relations, and (3) the equilibrium magnetic configurations in periodic magnetization textures in a ultrathin ferromagnetic film in remanence depend on the values of the Dzyaloshinskii-Moriya interaction and the perpendicular magnetocrystalline anisotropy. We observe that for large Dzyaloshinskii-Moriya interaction values, spin spirals with periods of tens of nanometers are the preferred state; for small Dzyaloshinskii-Moriya interaction values and large anisotropies, stripe domain patterns with over a thousand times larger period are preferable. We observe and explain the selectivity of the excitation of resonant modes by a linearly polarized microwave field. We study the propagation of spin waves along and perpendicular to the direction of the periodicity. For propagation along the direction of the periodicity, we observe a bandgap that closes and reopens, which is accompanied by a swap in the order of the bands. For waves propagating in the perpendicular direction, some modes can be used for unidirectional channeling of spin waves. Overall, our findings are promising in sensing and signal processing applications and explain the fundamental properties of periodic magnetization textures.

Sizable spin-to-charge conversion in PLD-grown amorphous (Mo, W)Te2-xfilms

We report on the spin-to-charge conversion (SCC) in Mo_0.25W_0.75Te_2-x(MWT)/Y₃Fe₅O₁₂(YIG) heterostructures at room temperature. The centimeter-scale amorphous MWT films are deposited on liquid-phase-epitaxial YIG by pulsed laser deposition technique. The significant SCC voltage is measured in the MWT layer with a sizable spin Hall angle of ∼0.021 by spin pumping experiments. The control experiments by inserting MgO or Ag layer between MWT and YIG show that the SCC is mainly attributed to the inverse spin Hall effect rather than the thermal or interfacial Rashba effect. Our work provides a novel spin-source material for energy-efficient topological spintronic devices.

E-Spin: A Stochastic Ising Spin Based on Electrically-Controlled MTJ for Constructing Large-Scale Ising Annealing Systems

With its unique computer paradigm, the Ising annealing machine has become an emerging research direction. The Ising annealing system is highly effective at addressing combinatorial optimization (CO) problems that are difficult for conventional computers to tackle. However, Ising spins, which comprise the Ising system, are difficult to implement in high-performance physical circuits. We propose a novel type of Ising spin based on an electrically-controlled magnetic tunnel junction (MTJ). Electrical operation imparts true randomness, great stability, precise control, compact size, and easy integration to the MTJ-based spin. In addition, simulations demonstrate that the frequency of electrically-controlled stochastic Ising spin (E-spin) is 50 times that of the thermal disturbance MTJ-based spin (p-bit). To develop a large-scale Ising annealing system, up to 64 E-spins are implemented. Our Ising annealing system demonstrates factorization of integers up to 264 with a temporal complexity of around O(n). The proposed E-spin shows superiority in constructing large-scale Ising annealing systems and solving CO problems.

Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics

Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na₂KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics.

Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin-orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin-orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As).

The influence of structure and local structural defects on the magnetic properties of cobalt nanofilms

The present paper considers a mathematical model describing the time evolution of spin states and magnetic properties of a nanomaterial. We present the results of two variants of nanosystem simulations. In the first variant, cobalt with a structure close to the hexagonal close-packed crystal lattice was considered. In the second case, a cobalt nanofilm formed in the previously obtained numerical experiment of multilayer niobium-cobalt nanocomposite deposition was investigated. The sizes of the systems were the same in both cases. For both simulations, after pre-correction in the initial time stages, the value of spin temperature stabilized and tended to the average value. Also, the change in spin temperature occurred near the average value. The system with a real structure had a variable spin temperature compared to that of a system with an ideal structure. In all cases of calculations for cobalt, the ferromagnetic behavior was preserved. Defects in the structure and local arrangement of the atoms cause a deterioration in the magnetic macroscopic parameters, such as a decrease in the magnetization modulus.

Skyrmions Under Control-FIB Irradiation as a Versatile Tool for Skyrmion Circuits

Magnetic data storage and processing offer certain advances over conventional technologies, amongst which nonvolatility and low power operation are the most outstanding ones. Skyrmions are a promising candidate as a magnetic data carrier. However, the sputtering of skyrmion films and the control of the skyrmion nucleation, motion, and annihilation remains challenging. This work demonstrates that using optimized focused ion beam irradiation and annealing protocols enables the skyrmion phase in W/CoFeB/MgO thin films to be accessed easily. By analyzing ion-beam-engineered skyrmion hosting wires, excited by sub-100 ns current pulses, possibilities to control skyrmion nucleation, guide their motion, and control their annihilation unfold. Overall, the key elements needed to develop extensive skyrmion networks are presented.

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices^1-5. Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface¹ and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn₃Sn/MgO/Mn₃Sn (ref. ⁶). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn₃Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet⁷ can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets^8-10.

Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin-orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane can turn on and off the TI surface current. By exploiting this reciprocal behavior, we can use two FM/3DTI heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Nonequilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.

Heavy metal deposition temperature tuned spin pumping efficiency control in permalloy/tantalum bilayers

Spin pumping is a key property for spintronic application that can be realized in heavy metal/ferromagnet bilayers. Here we demonstrate the possibility of improving spin pumping in permalloy (Py)/tantalum (Ta) bilayers through control of Ta heavy metal deposition temperature. Through a combination of structural and ferromagnetic resonance based magnetization dynamics study, we reveal the role of Ta deposition temperature in improving spin mixing conductance which is a key parameter for spin pumping across the Py/Ta interface. The results show that by depositing Ta above room temperature, a high spin mixing conductance of 7.7 ×10¹⁸m^-2is obtained withα-Ta layer. The results present an understanding of the correlation between heavy metal deposition temperature and interface structure improvement and consequent control of spin pumping in Py/Ta bilayers.

Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures

Van der Waals (vdW) magnet heterostructures have emerged as new platforms to explore exotic magnetic orders and quantum phenomena. Here, we study heterostructures of layered antiferromagnets, CrI₃ and CrCl₃, with perpendicular and in-plane magnetic anisotropy, respectively. Using magneto-optical Kerr effect microscopy, we demonstrate out-of-plane magnetic order in the CrCl₃ layer proximal to CrI₃, with ferromagnetic interfacial coupling between the two. Such an interlayer exchange field leads to higher critical temperature than that of either CrI₃ or CrCl₃ alone. We further demonstrate significant electric-field control of the coercivity, attributed to the naturally broken structural inversion symmetry of the heterostructure allowing unprecedented direct coupling between electric field and interfacial magnetism. These findings illustrate the opportunity to explore exotic magnetic phases and engineer spintronic devices in vdW heterostructures.

Input-driven chaotic dynamics in vortex spin-torque oscillator

A new research topic in spintronics relating to the operation principles of brain-inspired computing is input-driven magnetization dynamics in nanomagnet. In this paper, the magnetization dynamics in a vortex spin-torque oscillator driven by a series of random magnetic field are studied through a numerical simulation of the Thiele equation. It is found that input-driven synchronization occurs in the weak perturbation limit, as found recently. As well, chaotic behavior is newly found to occur in the vortex core dynamics for a wide range of parameters, where synchronized behavior is disrupted by an intermittency. Ordered and chaotic dynamical phases are examined by evaluating the Lyapunov exponent. The relation between the dynamical phase and the computational capability of physical reservoir computing is also studied.

Micromagnetic Design of Skyrmionic Materials and Chiral Magnetic Configurations in Patterned Nanostructures for Neuromorphic and Qubit Applications

Our study addresses the problematics of magnetic skyrmions, nanometer-size vortex-like swirling topological defects, broadly studied today for applications in classic, neuromorphic and quantum information technologies. We tackle some challenging issues of material properties versus skyrmion stability and manipulation within a multiple-scale modeling framework, involving complementary ab-initio and micromagnetic frameworks. Ab-initio calculations provide insight into the anatomy of the magnetic anisotropy, the Dzyaloshinskii-Moriya asymmetric exchange interaction (DMI) and their response to a gating electric field. Various multi-layered heterostructures were specially designed to provide electric field tunable perpendicular magnetization and sizeable DMI, which are required for skyrmion occurrence. Landau-Lifshitz-Gilbert micromagnetic calculations in nanometric disks allowed the extraction of material parameter phase diagrams in which magnetic textures were classified according to their topological charge. We identified suitable ranges of magnetic anisotropy, DMI and saturation magnetization for stabilizing skyrmionic ground states or writing/manipulating them using either a spin-transfer torque of a perpendicular current or the electric field. From analyzing the different contributions to the total magnetic free energy, we point out some critical properties influencing the skyrmions' stability. Finally, we discuss some experimental issues related to the choice of materials or the design of novel magnetic materials compatible with skyrmionic applications.

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis approach successfully used in nanoscale metallic spin valves to MTJs by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current. The experimentally measured voltage and angle dependencies of the torques acting on the free layer are thereby accurately reproduced. The switching behavior of ultra-scaled MRAM cells is in agreement with recent experiments on shape-anisotropy MTJs. Using our extended approach is absolutely essential to accurately capture the interplay of the Slonczewski and Zhang-Li torque contributions acting on a textured magnetization in composite free layers with the inclusion of several MgO barriers.

Spin Selectivity in Chiral Hybrid Cobalt Halide Films with Ultrasmooth Surface

Introducing chirality into low-dimensional hybrid organic-inorganic halides (HOIHs) creates brand-new opportunities for HOIHs in spintronics and spin-related optoelectronics owing to chirality-induced spin selectivity (CISS). However, preparing smooth films of low-dimensional HOIHs with small roughness is still a great challenge due to the hybrid and complex crystal structure, which severely inhibits their applications in spintronic devices. Exploring new lead-free chiral HOIHs with both efficient spin selectivity and excellent film quality is urgently desired. Here, cobalt-based chiral metal halide crystals (R/S-NEA)₂ CoCl₄ constructed by 0D [CoCl₄ ] tetrahedrons and 1-(1-naphtyl)ethylamine (NEA) are synthesized. The orderly configuration of NEA molecules stabilized by noncovalent CH···π interaction endows (NEA)₂ CoCl₄ with good film-forming ability. (NEA)₂ CoCl₄ films exhibit strong chiroptical activity (g_CD  ≈ 0.05) and significant spin-polarized transport (CISS efficiency up to 90%). Furthermore, ultrasmooth films (roughness ∼ 0.3 nm) with enhanced crystallinity can be achieved by incorporating tiny amount tris(8-oxoquinoline)aluminum that has analogous conjugated structure to NEA. The realization of highly efficient spin selectivity and sub-nanometer roughness in lead-free chiral halides can boost the practical process of low-dimensional HOIHs in spintronics and other fields.

Quantum Advantage in a Molecular Spintronic Engine that Harvests Thermal Fluctuation Energy

Recent theory and experiments have showcased how to harness quantum mechanics to assemble heat/information engines with efficiencies that surpass the classical Carnot limit. So far, this has required atomic engines that are driven by cumbersome external electromagnetic sources. Here, using molecular spintronics, an implementation that is both electronic and autonomous is proposed. The spintronic quantum engine heuristically deploys several known quantum assets by having a chain of spin qubits formed by the paramagnetic Co center of phthalocyanine (Pc) molecules electronically interact with electron-spin-selecting Fe/C₆₀ interfaces. Density functional calculations reveal that transport fluctuations across the interface can stabilize spin coherence on the Co paramagnetic centers, which host spin flip processes. Across vertical molecular nanodevices, enduring dc current generation, output power above room temperature, two quantum thermodynamical signatures of the engine's processes, and a record 89% spin polarization of current across the Fe/C₆₀ interface are measured. It is crucially this electron spin selection that forces, through demonic feedback and control, charge current to flow against the built-in potential barrier. Further research into spintronic quantum engines, insight into the quantum information processes within spintronic technologies, and retooling the spintronic-based information technology chain, can help accelerate the transition to clean energy.

Shaping the spin wave spectra of planar 1D magnonic crystals by the geometrical constraints

We present experimental and numerical studies demonstrating the influence of geometrical parameters on the fundamental spin-wave mode in planar 1D magnonic crystals. The investigated magnonic crystals consist of flat stripes separated by air gaps. The adjustment of geometrical parameters allows tailoring of the spin-wave frequencies. The width of stripes and the width of gaps between them affect spin-wave frequencies in two ways. First, directly by geometrical constraints confining the spin waves inside the stripes. Second, indirectly by spin-wave pinning, freeing the spin waves to a different extent on the edges of stripes. Experimentally, the fundamental spin-wave mode frequencies are measured using an all-optical pump-probe time-resolved magneto-optical Kerr-effect setup. Our studies address the problem of spin-wave confinement and spin-wave dipolar pinning in an array of coupled stripes. We show that the frequency of fundamental mode can be tuned to a large extent by adjusting the width of the stripes and the width of gaps between them.

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs)

Molecular spintronics devices (MSDs) attempt to harness molecules' quantum state, size, and configurable attributes for application in computer devices-a quest that began more than 70 years ago. In the vast number of theoretical studies and limited experimental attempts, MSDs have been found to be suitable for application in memory devices and futuristic quantum computers. MSDs have recently also exhibited intriguing spin photovoltaic-like phenomena, signaling their potential application in cost-effective and novel solar cell technologies. The molecular spintronics field's major challenge is the lack of mass-fabrication methods producing robust magnetic molecule connections with magnetic electrodes of different anisotropies. Another main challenge is the limitations of conventional theoretical methods for understanding experimental results and designing new devices. Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting paramagnetic molecules across an insulating tunneling barrier. The insulating tunneling barrier serves as a mechanical spacer between two ferromagnetic (FM) electrodes of tailorable magnetic anisotropies to allow molecules to undergo many intriguing phenomena. Our experimental studies showed that the paramagnetic molecules could produce strong antiferromagnetic coupling between two FM electrodes, leading to a dramatic large-scale impact on the magnetic electrode itself. Recently, we showed that the Monte Carlo Simulation (MCS) was effective in providing plausible insights into the observation of unusual magnetic domains based on the role of single easy-axis magnetic anisotropy. Here, we experimentally show that the response of a paramagnetic molecule is dramatically different when connected to FM electrodes of different easy-axis anisotropies. Motivated by our experimental studies, here, we report on an MCS study investigating the impact of the simultaneous presence of two easy-axis anisotropies on MTJMSD equilibrium properties. In-plane easy-axis anisotropy produced multiple magnetic phases of opposite spins. The multiple magnetic phases vanished at higher thermal energy, but the MTJMSD still maintained a higher magnetic moment because of anisotropy. The out-of-plane easy-axis anisotropy caused a dominant magnetic phase in the FM electrode rather than multiple magnetic phases. The simultaneous application of equal-magnitude in-plane and out-of-plane easy-axis anisotropies on the same electrode negated the anisotropy effect. Our experimental and MCS study provides insights for designing and understanding new spintronics-based devices.

Totally Spin-Polarized Currents in an Interferometer with Spin-Orbit Coupling and the Absence of Magnetic Field Effects

The paper studies the electronic current in a one-dimensional lead under the effect of spin-orbit coupling and its injection into a metallic conductor through two contacts, forming a closed loop. When an external potential is applied, the time reversal symmetry is broken and the wave vector k of the circulating electrons that contribute to the current is spin-dependent. As the wave function phase depends upon the vector k, the closed path in the circuit produces spin-dependent current interference. This creates a physical scenario in which a spin-polarized current emerges, even in the absence of external magnetic fields or magnetic materials. It is possible to find points in the system's parameter space and, depending upon its geometry, the value of the Fermi energy and the spin-orbit intensities, for which the electronic states participating in the current have only one spin, creating a high and totally spin-polarized conductance. For a potential of a few tens of meV, it is possible to obtain a spin-polarized current of the order of μA. The properties of the obtained electronic current qualify the proposed device as a potentially important tool for spintronics applications.

Magnetic Field Magnitudes Needed for Skyrmion Generation in a General Perpendicularly Magnetized Film

Due to its topological protection, the magnetic skyrmion has been intensively studied for both fundamental aspects and spintronics applications. However, despite recent advancements in skyrmion research, the deterministic creation of isolated skyrmions in a generic perpendicularly magnetized film is still one of the most essential and challenging techniques. Here, we present a method to create magnetic skyrmions in typical perpendicular magnetic anisotropy (PMA) films by applying a magnetic field pulse and a method to determine the magnitude of the required external magnetic fields. Furthermore, to demonstrate the usefulness of this result for future skyrmion research, we also experimentally study the PMA dependence on the minimum size of skyrmions. Although field-driven skyrmion generation is unsuitable for device application, this result can provide an easier approach for obtaining isolated skyrmions, making skyrmion-based research more accessible.

Reversible Transformation between Isolated Skyrmions and Bimerons

Skyrmions and bimerons are versatile topological spin textures that can be used as information bits for both classical and quantum computing. The transformation between isolated skyrmions and bimerons is an essential operation for computing architecture based on multiple different topological bits. Here we report the creation of isolated skyrmions and their subsequent transformation to bimerons by harnessing the electric current-induced Oersted field and temperature-induced perpendicular magnetic anisotropy variation. The transformation between skyrmions and bimerons is reversible, which is controlled by the current amplitude and scanning direction. Both skyrmions and bimerons can be created in the same system through the skyrmion-bimeron transformation and magnetization switching. Deformed skyrmion bubbles and chiral labyrinth domains are found as nontrivial intermediate transition states. Our results may provide a unique way for building advanced information-processing devices using different types of topological spin textures in the same system.

MX family: an efficient platform for topological spintronics based on Rashba and Zeeman-like spin splittings

Taking various combinations of M = (Mo, W) and X = (C, S, Se) as examples, we propose that MX (M = transition metals, X = IV,V or VI elements) family can establish an excellent platform for both conventional and topological spintronics applications based on anisotropic Rashba-like and non-magnetic Zeeman-type spin splittings with electrically tunable nature. In particular, we observe sizeable Zeeman-like and Rashba-like spin splittings with an anisotropic nature. Meanwhile, they exhibit Rashba-like and topologically robust helical edge states when grown in ferroelectric and paraelectric phases, respectively. These MX monolayers are realized to be quantum valley Hall insulators due to valley contrasting Berry curvatures. The carriers in these MX monolayers can be selectively excited from opposite valleys depending on the polarity of circularly polarized light. The amplitude of the spin splitting can be further tuned by applying external means such as strain, electric field or alloy engineering. Furthermore, considering graphene sheet over the WC monolayer as a prototype example, we show that these MX monolayers can boost the relativistic effect by coupling with the systems exhibiting extremely weak spin-orbit coupling (SOC). Depending on the surface of WC monolayer in contact with the graphene sheet, graphene over WC monolayer passes through the transformation from the semiconducting junction to the Shotcky barrier-free contact. Finally, we reveal that these MX monolayers could also be grown on the substrates such as WS2(001)and GaTe (001) with type-II band alignment, where electron and hole become layer splitted across the interface. Our analysis should be fairly applied to other systems with strong SOC and an equivalent geometrical structure to the MX monolayers.

Manipulation of Magnetic Skyrmion Density in Continuous Ir/Co/Pt Multilayers

We show that magnetic skyrmions can be stabilised at room temperature in continuous [Ir/Co/Pt]₅ multilayers on SiO₂/Si substrates without the prior application of electric current or magnetic field. While decreasing the Co thickness, a transition of the magnetic domain patterns from worm-like state to separated stripes is observed. The skyrmions are clearly imaged in both states using magnetic force microscopy. The density of skyrmions can be significantly enhanced after applying the "in-plane field procedure". Our results provide means to manipulate magnetic skyrmion density, further allowing for the optimised engineering of skyrmion-based devices.