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Song J, Liu H, Zhao Z, Lin P, Yan F. Flexible Organic Transistors for Biosensing: Devices and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2300034. [PMID: 36853083 DOI: 10.1002/adma.202300034] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Flexible and stretchable biosensors can offer seamless and conformable biological-electronic interfaces for continuously acquiring high-fidelity signals, permitting numerous emerging applications. Organic thin film transistors (OTFTs) are ideal transducers for flexible and stretchable biosensing due to their soft nature, inherent amplification function, biocompatibility, ease of functionalization, low cost, and device diversity. In consideration of the rapid advances in flexible-OTFT-based biosensors and their broad applications, herein, a timely and comprehensive review is provided. It starts with a detailed introduction to the features of various OTFTs including organic field-effect transistors and organic electrochemical transistors, and the functionalization strategies for biosensing, with a highlight on the seminal work and up-to-date achievements. Then, the applications of flexible-OTFT-based biosensors in wearable, implantable, and portable electronics, as well as neuromorphic biointerfaces are detailed. Subsequently, special attention is paid to emerging stretchable organic transistors including planar and fibrous devices. The routes to impart stretchability, including structural engineering and material engineering, are discussed, and the implementations of stretchable organic transistors in e-skin and smart textiles are included. Finally, the remaining challenges and the future opportunities in this field are summarized.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
| | - Peng Lin
- Shenzhen Key Laboratory of Special Functional Materials and Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, P. R. China
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Kawabata R, Li K, Araki T, Akiyama M, Sugimachi K, Matsuoka N, Takahashi N, Sakai D, Matsuzaki Y, Koshimizu R, Yamamoto M, Takai L, Odawara R, Abe T, Izumi S, Kurihira N, Uemura T, Kawano Y, Sekitani T. Ultraflexible Wireless Imager Integrated with Organic Circuits for Broadband Infrared Thermal Analysis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309864. [PMID: 38213132 DOI: 10.1002/adma.202309864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Revised: 12/22/2023] [Indexed: 01/13/2024]
Abstract
Flexible imagers are currently under intensive development as versatile optical sensor arrays, designed to capture images of surfaces and internals, irrespective of their shape. A significant challenge in developing flexible imagers is extending their detection capabilities to encompass a broad spectrum of infrared light, particularly terahertz (THz) light at room temperature. This advancement is crucial for thermal and biochemical applications. In this study, a flexible infrared imager is designed using uncooled carbon nanotube (CNT) sensors and organic circuits. The CNT sensors, fabricated on ultrathin 2.4 µm substrates, demonstrate enhanced sensitivity across a wide infrared range, spanning from near-infrared to THz wavelengths. Moreover, they retain their characteristics under bending and crumpling. The design incorporates light-shielded organic transistors and circuits, functioning reliably under light irradiation, and amplifies THz detection signals by a factor of 10. The integration of both CNT sensors and shielded organic transistors into an 8 × 8 active-sensor matrix within the imager enables sequential infrared imaging and nondestructive assessment for heat sources and in-liquid chemicals through wireless communication systems. The proposed imager, offering unique functionality, shows promise for applications in biochemical analysis and soft robotics.
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Affiliation(s)
- Rei Kawabata
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Kou Li
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Teppei Araki
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan
| | - Mihoko Akiyama
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Kaho Sugimachi
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Division of Applied Science, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Nozomi Matsuoka
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Division of Applied Science, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Norika Takahashi
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Daiki Sakai
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Yuto Matsuzaki
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Ryo Koshimizu
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Minami Yamamoto
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Leo Takai
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Ryoga Odawara
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
| | - Takaaki Abe
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
| | - Shintaro Izumi
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Graduate School of Science, Technology and Innovation, Kobe University, 1-1 Rokkodai-cho, Nada-ku, Kobe, Hyogo, 657-8501, Japan
| | - Naoko Kurihira
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
| | - Takafumi Uemura
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan
| | - Yukio Kawano
- Department of Electrical, Electronic, and Communication Engineering, Faculty of Science and Engineering, Chuo University, 1-13-27 Kasuga, Bunkyo-ku, Tokyo, 112-8551, Japan
- National Institute of Informatics, 2-1-2 Hitotsubashi, Chiyoda-ku, Tokyo, 101-8430, Japan
| | - Tsuyoshi Sekitani
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki-shi, Osaka, 567-0047, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamada-Oka, Suita, Osaka, 565-0871, Japan
- Division of Applied Science, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
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Jeon Y, Kim S, Seo J, Yoo H. Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials. SMALL METHODS 2024; 8:e2300391. [PMID: 37231569 DOI: 10.1002/smtd.202300391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/29/2023] [Indexed: 05/27/2023]
Abstract
Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.
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Affiliation(s)
- Yunchae Jeon
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
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4
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Cui Z, Sa B, Xue KH, Zhang Y, Xiong R, Wen C, Miao X, Sun Z. Magnetic-ferroelectric synergic control of multilevel conducting states in van der Waals multiferroic tunnel junctions towards in-memory computing. NANOSCALE 2024; 16:1331-1344. [PMID: 38131373 DOI: 10.1039/d3nr04712a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
van der Waals (vdW) multiferroic tunnel junctions (MFTJs) based on two-dimensional materials have gained significant interest due to their potential applications in next-generation data storage and in-memory computing devices. In this study, we construct vdW MFTJs by employing monolayer Mn2Se3 as the spin-filter tunnel barrier, TiTe2 as the electrodes and In2S3 as the tunnel barrier to investigate the spin transport properties based on first-principles quantum transport calculations. It is highlighted that apparent tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects with a maximum TMR ratio of 6237% and TER ratio of 1771% can be realized by using bilayer In2S3 as the tunnel barrier under finite bias. Furthermore, the physical origin of the distinguished TMR and TER effects is unraveled from the k||-resolved transmission spectra and spin-dependent projected local density of states analysis. Interestingly, four distinguishable conductance states reveal the implementation of four-state nonvolatile data storage using one MFTJ unit. More importantly, in-memory logic computing and multilevel data storage can be achieved at the same time by magnetic switching and electrical control, respectively. These results shed light on vdW MFTJs in the applications of in-memory computing as well as multilevel data storage devices.
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Affiliation(s)
- Zhou Cui
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Kan-Hao Xue
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yinggan Zhang
- College of Materials, Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, P. R. China
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Cuilian Wen
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China.
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhimei Sun
- School of Materials Science and Engineering, and Center for Integrated Computational Materials Science, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China.
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5
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Zhang Y, Chen D, He W, Chen N, Zhou L, Yu L, Yang Y, Yuan Q. Interface-Engineered Field-Effect Transistor Electronic Devices for Biosensing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306252. [PMID: 38048547 DOI: 10.1002/adma.202306252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Revised: 09/17/2023] [Indexed: 12/06/2023]
Abstract
Promising advances in molecular medicine have promoted the urgent requirement for reliable and sensitive diagnostic tools. Electronic biosensing devices based on field-effect transistors (FETs) exhibit a wide range of benefits, including rapid and label-free detection, high sensitivity, easy operation, and capability of integration, possessing significant potential for application in disease screening and health monitoring. In this perspective, the tremendous efforts and achievements in the development of high-performance FET biosensors in the past decade are summarized, with emphasis on the interface engineering of FET-based electrical platforms for biomolecule identification. First, an overview of engineering strategies for interface modulation and recognition element design is discussed in detail. For a further step, the applications of FET-based electrical devices for in vitro detection and real-time monitoring in biological systems are comprehensively reviewed. Finally, the key opportunities and challenges of FET-based electronic devices in biosensing are discussed. It is anticipated that a comprehensive understanding of interface engineering strategies in FET biosensors will inspire additional techniques for developing highly sensitive, specific, and stable FET biosensors as well as emerging designs for next-generation biosensing electronics.
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Affiliation(s)
- Yun Zhang
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Duo Chen
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang He
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Na Chen
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Liping Zhou
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Lilei Yu
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Yanbing Yang
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
| | - Quan Yuan
- College of Chemistry and Molecular Sciences, Key Laboratory of Biomedical Polymers of Ministry of Education, Institute of Molecular Medicine, Renmin Hospital of Wuhan University, School of Microelectronics, Wuhan University, Wuhan, 430072, P. R. China
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He L, Yang Z, Wang Z, Leydecker T, Orgiu E. Organic multilevel (opto)electronic memories towards neuromorphic applications. NANOSCALE 2023. [PMID: 37378458 DOI: 10.1039/d3nr01311a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
In the past decades, neuromorphic computing has attracted the interest of the scientific community due to its potential to circumvent the von Neumann bottleneck. Organic materials, owing to their fine tunablility and their ability to be used in multilevel memories, represent a promising class of materials to fabricate neuromorphic devices with the key requirement of operation with synaptic weight. In this review, recent studies of organic multilevel memory are presented. The operating principles and the latest achievements obtained with devices exploiting the main approaches to reach multilevel operation are discussed, with emphasis on organic devices using floating gates, ferroelectric materials, polymer electrets and photochromic molecules. The latest results obtained using organic multilevel memories for neuromorphic circuits are explored and the major advantages and drawbacks of the use of organic materials for neuromorphic applications are discussed.
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Affiliation(s)
- Lin He
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Zuchong Yang
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Tim Leydecker
- Institute of Fundamental and Frontier Sciences (IFFS), University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Emanuele Orgiu
- Institut national de la recherche scientifique (INRS), Centre Énergie Matériaux Télécommunications, 1650 Boul. Lionel Boulet, Varennes J3X 1S2, Canada.
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7
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Wang L, Saji SE, Wu L, Wang Z, Chen Z, Du Y, Yu XF, Zhao H, Yin Z. Emerging Synthesis Strategies of 2D MOFs for Electrical Devices and Integrated Circuits. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201642. [PMID: 35843870 DOI: 10.1002/smll.202201642] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Indexed: 06/15/2023]
Abstract
The development of advanced electronic devices is boosting many aspects of modern technology and industry. The ever-increasing demand for advanced electrical devices and integrated circuits calls for the design of novel materials, with superior properties for the improvement of working performance. In this review, a detailed overview of the synthesis strategies of 2D metal organic frameworks (MOFs) acquiring growing attention is presented, as a basis for expansion of novel key materials in electrical devices and integrated circuits. A framework of controllable synthesis routes to be implanted in the synthesis strategies of 2D materials and MOFs is described. In short, the synthesis methods of 2D MOFs are summarized and discussed in depth followed by the illustrations of promising applications relating to various electrical devices and integrated circuits. It is concluded by outlining how 2D MOFs can be synthesized in a simpler, highly efficient, low-cost, and more environmentally friendly way which can open up their applicable opportunities as key materials in advanced electrical devices and integrated circuits, enabling their use in broad aspects of the society.
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Affiliation(s)
- Linjuan Wang
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Sandra Elizabeth Saji
- Research School of Chemistry, Australian National University, Acton, ACT, 2601, Australia
| | - Lingjun Wu
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Zixuan Wang
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Zijian Chen
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Yaping Du
- Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering & National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Xue-Feng Yu
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Haitao Zhao
- Materials Interfaces Center, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Zongyou Yin
- Research School of Chemistry, Australian National University, Acton, ACT, 2601, Australia
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Kang J, Jang Y, Moon SH, Kang Y, Kim J, Kim Y, Park SK. Symmetrically Ion-Gated In-Plane Metal-Oxide Transistors for Highly Sensitive and Low-Voltage Driven Bioelectronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103275. [PMID: 35240004 PMCID: PMC9069198 DOI: 10.1002/advs.202103275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
To provide a unique opportunity for on-chip scaled bioelectronics, a symmetrically gated metal-oxide electric double layer transistor (EDLT) with ion-gel (IG) gate dielectric and simple in-plane Corbino electrode architecture is proposed. Using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor and IG dielectric layers, low-voltage driven EDLTs with high ionotronic effects can be realized. More importantly, in contrast to the conventional asymmetric rectangular EDLTs which can cause non-uniform potential variation in the active channel layer and eventually degrade the sensing performance, the new symmetrical in-plane type EDLTs achieve high and spatially uniform ion responsive behaviors. The symmetrically gated a-IGZO EDLTs exhibited a responsivity of 129.4% to 5 ppm mercury (Hg2+ ) ions which are approximately three times higher than that with conventional electrode structure (responsivity of 38.5%). To confirm the viability of the new device architectures and the findings, the detailed mechanism of the symmetric gating effects in the in-plane EDLTs with a variety of electrical characterization and 3D fine element analysis simulations is also discussed.
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Affiliation(s)
- Jingu Kang
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Young‐Woo Jang
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Sang Hee Moon
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
| | - Youngjin Kang
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Jaehyun Kim
- Department of Chemistry and Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA
| | - Yong‐Hoon Kim
- School of Advanced Materials Science and EngineeringSungkyunkwan UniversitySuwon16419Korea
| | - Sung Kyu Park
- School of Electrical and Electronics EngineeringChung‐Ang UniversitySeoul06974Korea
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9
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Kumar M, Kim U, Lee W, Seo H. Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200122. [PMID: 35288987 DOI: 10.1002/adma.202200122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2022] [Revised: 03/02/2022] [Indexed: 06/14/2023]
Abstract
The pursuit of a universal device that combines nonvolatile multilevel storage, ultrafast writing/erasing speed, nondestructive readout, and embedded processing with low power consumption demands the development of innovative architectures. Although thin-film transistors and redox-based resistive-switching devices have independently been proven to be ideal building blocks for data processing and storage, it is still difficult to achieve both well-controlled multilevel memory and high-precision ultrafast processing in a single unit, even though this is essential for the large-scale hardware implementation of in-memory computing. In this work, an ultrafast (≈42 ns) and programable redox thin-film transistor (ReTFT) memory made of a proximity-oxidation-grown TiO2 layer is developed, which has on/off ratio of 105 , nonvolatile multilevel analog storage with a long retention time, strong durability, and high reliability. Utilizing the proof-of-concept ReTFTs, circuits capable of performing fundamental NOT, AND, and OR operations with reconfigurable logic-in-memory processing are developed. Further, on-demand signal memory-processing operations, like multi-terminal addressable memory, learning, pattern recognition, and classification, are explored for prospective application in neuromorphic hardware. This device, which operates on a fundamentally different mechanism, presents an alternate solution to the problems associated with the creation of high-performing in-memory processing technology.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Unjeong Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - WangGon Lee
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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10
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Bhatt D, Panda S. Dual‐gate ion‐sensitive field‐effect transistors: A review. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022] Open
Affiliation(s)
- Deepa Bhatt
- National Centre for Flexible Electronics Indian Institute of Technology Kanpur Kanpur India
- Samtel Centre for Display Technologies Indian Institute of Technology Kanpur Kanpur India
| | - Siddhartha Panda
- National Centre for Flexible Electronics Indian Institute of Technology Kanpur Kanpur India
- Samtel Centre for Display Technologies Indian Institute of Technology Kanpur Kanpur India
- Department of Chemical Engineering Indian Institute of Technology Kanpur Kanpur India
- Materials Science Programme Indian Institute of Technology Kanpur Kanpur India
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11
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Hasan N, Kansakar U, Sherer E, DeCoster MA, Radadia AD. Ion-Selective Membrane-Coated Graphene-Hexagonal Boron Nitride Heterostructures for Field-Effect Ion Sensing. ACS OMEGA 2021; 6:30281-30291. [PMID: 34805660 PMCID: PMC8600519 DOI: 10.1021/acsomega.1c02222] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
An intrinsic ion sensitivity exceeding the Nernst-Boltzmann limit and an sp 2 -hybridized carbon structure make graphene a promising channel material for realizing ion-sensitive field-effect transistors with a stable solid-liquid interface under biased conditions in buffered salt solutions. Here, we examine the performance of graphene field-effect transistors coated with ion-selective membranes as a tool to selectively detect changes in concentrations of Ca2+, K+, and Na+ in individual salt solutions as well as in buffered Locke's solution. Both the shift in the Dirac point and transconductance could be measured as a function of ion concentration with repeatability exceeding 99.5% and reproducibility exceeding 98% over 60 days. However, an enhancement of selectivity, by about an order magnitude or more, was observed using transconductance as the indicator when compared to Dirac voltage, which is the only factor reported to date. Fabricating a hexagonal boron nitride multilayer between graphene and oxide further increased the ion sensitivity and selectivity of transconductance. These findings incite investigating ion sensitivity of transconductance in alternative architectures as well as urge the exploration of graphene transistor arrays for biomedical applications.
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Affiliation(s)
- Nowzesh Hasan
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Urna Kansakar
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Eric Sherer
- Chemical
Engineering, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Mark A. DeCoster
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Adarsh D. Radadia
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Chemical
Engineering, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
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12
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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor. SENSORS 2021; 21:s21124213. [PMID: 34205380 PMCID: PMC8235453 DOI: 10.3390/s21124213] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Revised: 06/16/2021] [Accepted: 06/17/2021] [Indexed: 11/25/2022]
Abstract
In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.
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13
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Lee D, Jung WH, Lee S, Yu ES, Lee T, Kim JH, Song HS, Lee KH, Lee S, Han SK, Choi MC, Ahn DJ, Ryu YS, Kim C. Ionic contrast across a lipid membrane for Debye length extension: towards an ultimate bioelectronic transducer. Nat Commun 2021; 12:3741. [PMID: 34145296 PMCID: PMC8213817 DOI: 10.1038/s41467-021-24122-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2020] [Accepted: 06/03/2021] [Indexed: 11/09/2022] Open
Abstract
Despite technological advances in biomolecule detections, evaluation of molecular interactions via potentiometric devices under ion-enriched solutions has remained a long-standing problem. To avoid severe performance degradation of bioelectronics by ionic screening effects, we cover probe surfaces of field effect transistors with a single film of the supported lipid bilayer, and realize respectable potentiometric signals from receptor-ligand bindings irrespective of ionic strength of bulky solutions by placing an ion-free water layer underneath the supported lipid bilayer. High-energy X-ray reflectometry together with the circuit analysis and molecular dynamics simulation discovered biochemical findings that effective electrical signals dominantly originated from the sub-nanoscale conformational change of lipids in the course of receptor-ligand bindings. Beyond thorough analysis on the underlying mechanism at the molecular level, the proposed supported lipid bilayer-field effect transistor platform ensures the world-record level of sensitivity in molecular detection with excellent reproducibility regardless of molecular charges and environmental ionic conditions.
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Affiliation(s)
- Donggeun Lee
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea.,Department of Electrical & Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Woo Hyuk Jung
- Department of Chemical and Biological Engineering, Korea University, Seoul, Republic of Korea
| | - Suho Lee
- Department of Bio and Brain Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Eui-Sang Yu
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Taikjin Lee
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Jae Hun Kim
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Hyun Seok Song
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Kwan Hyi Lee
- Center for Biomaterials, Korea Institute of Science and Technology, Seoul, Republic of Korea.,KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Republic of Korea
| | - Seok Lee
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Sang-Kook Han
- Department of Electrical & Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Myung Chul Choi
- Department of Bio and Brain Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Dong June Ahn
- Department of Chemical and Biological Engineering, Korea University, Seoul, Republic of Korea. .,KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Republic of Korea.
| | - Yong-Sang Ryu
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea. .,KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Republic of Korea.
| | - Chulki Kim
- Sensor System Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea.
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14
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Bertel L, Ospina R, García‐Castro AC, Quintero‐Orozco JH, Miranda DA. Synthesis of CdM (M = Se, O) micro and nanoparticles by pulsed laser ablation in water. SURF INTERFACE ANAL 2021. [DOI: 10.1002/sia.6942] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Linda Bertel
- Universidad Industrial de Santander Bucaramanga Colombia
- Centro de Investigación Científica y Técnológica en Materiales y Nanociencias (CMN) Ciencia de Materiales Biológicos y Semiconductores Research Group (CIMBIOS) Piedecuesta Colombia
| | - Rogelio Ospina
- Universidad Industrial de Santander Bucaramanga Colombia
- Centro de Investigación Científica y Técnológica en Materiales y Nanociencias (CMN) Ciencia de Materiales Biológicos y Semiconductores Research Group (CIMBIOS) Piedecuesta Colombia
| | - Andres C. García‐Castro
- Universidad Industrial de Santander Bucaramanga Colombia
- Centro de Investigación Científica y Técnológica en Materiales y Nanociencias (CMN) Ciencia de Materiales Biológicos y Semiconductores Research Group (CIMBIOS) Piedecuesta Colombia
| | - Jorge H. Quintero‐Orozco
- Universidad Industrial de Santander Bucaramanga Colombia
- Centro de Investigación Científica y Técnológica en Materiales y Nanociencias (CMN) Ciencia de Materiales Biológicos y Semiconductores Research Group (CIMBIOS) Piedecuesta Colombia
| | - David A. Miranda
- Universidad Industrial de Santander Bucaramanga Colombia
- Centro de Investigación Científica y Técnológica en Materiales y Nanociencias (CMN) Ciencia de Materiales Biológicos y Semiconductores Research Group (CIMBIOS) Piedecuesta Colombia
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15
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Thomas MS, Adrahtas DZ, Frisbie CD, Dorfman KD. Modeling of Quasi-Static Floating-Gate Transistor Biosensors. ACS Sens 2021; 6:1910-1917. [PMID: 33886283 DOI: 10.1021/acssensors.1c00261] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Floating-gate transistors (FGTs) are a promising class of electronic sensing architectures that separate the transduction elements from molecular sensing components, but the factors leading to optimum device design are unknown. We developed a model, generalizable to many different semiconductor/dielectric materials and channel dimensions, to predict the sensor response to changes in capacitance and/or charge at the sensing surface upon target binding or other changes in surface chemistry. The model predictions were compared to experimental data obtained using a floating-gate (extended gate) electrochemical transistor, a variant of the generic FGT architecture that facilitates low-voltage operation and rapid, simple fabrication using printing. Self-assembled monolayer (SAM) chemistry and quasi-statically measured resistor-loaded inverters were utilized to obtain experimentally either the capacitance signals (with alkylthiol SAMs) or charge signals (with acid-terminated SAMs) of the FGT. Experiments reveal that the model captures the inverter gain and charge signals over 3 orders of magnitude variation in the size of the sensing area and the capacitance signals over 2 orders of magnitude but deviates from experiments at lower capacitances of the sensing surface (<1 nF). To guide future device design, model predictions for a large range of sensing area capacitances and characteristic voltages are provided, enabling the calculation of the optimum sensing area size for maximum charge and capacitance sensitivity.
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Affiliation(s)
- Mathew S. Thomas
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - Demetra Z. Adrahtas
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - C. Daniel Frisbie
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - Kevin D. Dorfman
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
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16
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Panahi A, Sadighbayan D, Forouhi S, Ghafar-Zadeh E. Recent Advances of Field-Effect Transistor Technology for Infectious Diseases. BIOSENSORS 2021; 11:103. [PMID: 33918325 PMCID: PMC8065562 DOI: 10.3390/bios11040103] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Revised: 03/16/2021] [Accepted: 03/19/2021] [Indexed: 02/07/2023]
Abstract
Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.
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Affiliation(s)
- Abbas Panahi
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Deniz Sadighbayan
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Biology, Faculty of Science, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Saghi Forouhi
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
| | - Ebrahim Ghafar-Zadeh
- Biologically Sensors and Actuators (BioSA) Laboratory, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada; (A.P.); (D.S.); (S.F.)
- Department of Electrical Engineering and Computer Science, Lassonde School of Engineering, York University, Keel Street, Toronto, ON M3J 1P3, Canada
- Department of Biology, Faculty of Science, York University, Keel Street, Toronto, ON M3J 1P3, Canada
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17
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Lee HR, Lee D, Oh JH. A Hippocampus-Inspired Dual-Gated Organic Artificial Synapse for Simultaneous Sensing of a Neurotransmitter and Light. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100119. [PMID: 33754389 DOI: 10.1002/adma.202100119] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Revised: 02/04/2021] [Indexed: 05/26/2023]
Abstract
Organic neuromorphic devices and sensors that mimic the functions of chemical synapses and sensory perception in humans have received much attention for next-generation computing and integrated logic circuits. Despite recent advances, organic artificial synapses capable of detecting both neurotransmitters in liquid environments and light are not reported. Herein, inspired by hippocampal synapses, a dual-gate organic synaptic transistor platform with a photoconductive polymer semiconductor, a ferroelectric insulator of P(VDF-TrFE), and an extended-gate electrode functionalized with boronic acid is developed to simultaneously detect the neurotransmitter dopamine and light. The developed synaptic transistor enables memory consolidation upon repetitive exposure to dopamine and polychromatic light, exhibiting effectively modulated postsynaptic currents. This proof-of-concept hippocampal-synapse-mimetic organic neuromorphic system combining a chemical sensor and a photosensor opens new possibilities for developing low-power organic artificial synaptic multisensors and light-induced memory consolidative artificial synapses, and can also contribute to the development of human-machine interfaces.
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Affiliation(s)
- Hae Rang Lee
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Doyoung Lee
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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18
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Kim S, Park S, Cho YS, Kim Y, Tae JH, No TI, Shim JS, Jeong Y, Kang SH, Lee KH. Electrical Cartridge Sensor Enables Reliable and Direct Identification of MicroRNAs in Urine of Patients. ACS Sens 2021; 6:833-841. [PMID: 33284011 DOI: 10.1021/acssensors.0c01870] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Urinary miRNAs are biomarkers that demonstrate considerable promise for the noninvasive diagnosis and prognosis of diseases. However, because of background noise resulting from complex physiological features of urine, instability of miRNAs, and their low concentration, accurate monitoring of miRNAs in urine is challenging. To address these limitations, we developed a urine-based disposable and switchable electrical sensor that enables reliable and direct identification of miRNAs in patient urine. The proposed sensing platform combining disposable sensor chips composed of a reduced graphene oxide nanosheet and peptide nucleic acid facilitates the label-free detection of urinary miRNAs with high specificity and sensitivity. Using real-time detection of miRNAs in patient urine without pretreatment or signal amplification, this sensor allows rapid, direct detection of target miRNAs in a broad dynamic range with a detection limit down to 10 fM in human urine specimens within 20 min and enables simultaneous quantification of multiple miRNAs. As confirmed using a blind comparison with the results of pathological examination of patients with prostate cancer, the sensor offers the potential to improve the accuracy of early diagnosis before a biopsy is taken. This study holds the usefulness of the practical sensor for the clinical diagnosis of urological diseases.
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Affiliation(s)
- Seongchan Kim
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Sungwook Park
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Young Soo Cho
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Younghoon Kim
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jong Hyun Tae
- Department of Urology, Korea University, School of Medicine, Seoul 02841, Republic of Korea
| | - Tae Il No
- Department of Urology, Korea University, School of Medicine, Seoul 02841, Republic of Korea
| | - Ji Sung Shim
- Department of Urology, Korea University, School of Medicine, Seoul 02841, Republic of Korea
| | - Youngdo Jeong
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Department of HY-KIST Bio-convergence, Hanyang University, Seoul 04763, Republic of Korea
| | - Seok Ho Kang
- Department of Urology, Korea University, School of Medicine, Seoul 02841, Republic of Korea
| | - Kwan Hyi Lee
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
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19
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Ding J, Shao DF, Li M, Wen LW, Tsymbal EY. Two-Dimensional Antiferroelectric Tunnel Junction. PHYSICAL REVIEW LETTERS 2021; 126:057601. [PMID: 33605764 DOI: 10.1103/physrevlett.126.057601] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2020] [Revised: 05/17/2020] [Accepted: 01/08/2021] [Indexed: 06/12/2023]
Abstract
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Because of the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In_{2}X_{3} (X=S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In_{2}X_{3} bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a nonvolatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In_{2}S_{3} van der Waals bilayers, and predict giant tunneling electroresistance effects and multiple nonvolatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.
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Affiliation(s)
- Jun Ding
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
- College of Science, Henan University of Engineering, Zhengzhou 451191, People's Republic of China
| | - Ding-Fu Shao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
| | - Ming Li
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
| | - Li-Wei Wen
- College of Science, Henan University of Engineering, Zhengzhou 451191, People's Republic of China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USA
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20
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Lin BR, Cheng HL, Lin JH, Wu FC, Wang YW, Chou WY. Enhanced Functionality of Dual-Gate Organic Transistors Based on Semiconducting/Insulating Polyblend-Induced Asymmetric Charge Modulation Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:47763-47773. [PMID: 32967424 DOI: 10.1021/acsami.0c06301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Dual-gate organic thin-film transistors (DG-OTFTs) with enhanced functionality, including large current enhancement behavior, highly efficient threshold voltage controllability, and self-contained dual-mode logic gate features, are reported. These DG-OTFTs are based on a semiconducting/insulating polyblend-based active layer with asymmetric top and bottom charge modulation layers (atb-CMLs). The atb-CMLs are automatically generated through the preparation of multilayer stacks of phase-separated semiconducting poly(3-hexylthiophene) (P3HT):insulating poly(methylmethacrylate) (PMMA) polyblend layer, poly(vinylidene fluoride) (PVDF) layer, and cross-linked-poly(4-vinylphenol) (cPVP) layer. They consist of a thin PMMA bottom layer and an uneven-shaped PMMA:PVDF miscible mixture-based top layer. The presence of the polarizable insulating PMMA, PVDF, and PMMA:PVDF mixture regions causes the bottom and top CMLs to experience electrical polarization, which induces the dipole field to achieve efficient charge modulation functions in DG-OTFTs. Owing to the presence of atb-CMLs, the DG-OTFTs exhibit unprecedented electrical characteristics, such as the easy depletion of the bottom channel by the top gate potential. However, the top channel can work properly only when given a bottom gate potential (either positive or negative). Given these unusual electrical features, the design of the fundamental dual-mode logic gates (e.g., AND and OR gates) can be achieved with just one DG transistor. This finding opens an interesting direction for the preparation of DG-OTFTs with diverse operating modes and increasing functionality, thereby widening the application potential of such transistors.
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Affiliation(s)
- Bo-Ren Lin
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Horng-Long Cheng
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Jia-Hui Lin
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Fu-Chiao Wu
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
| | - Yu-Wu Wang
- Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan
| | - Wei-Yang Chou
- Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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21
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Guo E, Wu Z, Darbandy G, Xing S, Wang SJ, Tahn A, Göbel M, Kloes A, Leo K, Kleemann H. Vertical organic permeable dual-base transistors for logic circuits. Nat Commun 2020; 11:4725. [PMID: 32948770 PMCID: PMC7501854 DOI: 10.1038/s41467-020-18576-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 08/21/2020] [Indexed: 11/30/2022] Open
Abstract
The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits. The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently tunable on-currents and threshold voltages.
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Affiliation(s)
- Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Zhongbin Wu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany. .,Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 710072, Xi'an, China.
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Michael Göbel
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF), 01069, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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22
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Nikolka M, Simatos D, Foudeh A, Pfattner R, McCulloch I, Bao Z. Low-Voltage, Dual-Gate Organic Transistors with High Sensitivity and Stability toward Electrostatic Biosensing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:40581-40589. [PMID: 32805944 DOI: 10.1021/acsami.0c10201] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
High levels of performance and stability have been demonstrated for conjugated polymer thin-film transistors in recent years, making them promising materials for flexible electronic circuits and displays. For sensing applications, however, most research efforts have been focusing on electrochemical sensing devices. Here we demonstrate a highly stable biosensing platform using polymer transistors based on the dual-gate mechanism. In this architecture a sensing signal is transduced and amplified by the capacitive coupling between a low-k bottom dielectric and a high-k ionic elastomer top dielectric that is in contact with an analyte solution. The new design exhibits a high signal amplification, high stability under bias stress in various aqueous environments, and low signal drift. Our platform, furthermore, while responding expectedly to charged analytes such as the protein bovine serum albumin, is insensitive to changes of salt concentration of the analyte solution. These features make this platform a potentially suitable tool for a variety of biosensing applications.
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Affiliation(s)
- Mark Nikolka
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Dimitrios Simatos
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Amir Foudeh
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
| | - Raphael Pfattner
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
- Institute of Materials Science of Barcelona (ICMAB-CISC), Campus de la UAB, 08193, Bellaterra, Spain
| | - Iain McCulloch
- KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Department of Chemistry, Imperial College London, London SW7 2AZ, U.K
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
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23
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Xiang L, Zeng X, Xia F, Jin W, Liu Y, Hu Y. Recent Advances in Flexible and Stretchable Sensing Systems: From the Perspective of System Integration. ACS NANO 2020; 14:6449-6469. [PMID: 32479071 DOI: 10.1021/acsnano.0c01164] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Biological signals generated during various biological processes are critically important for providing insight into the human physiological status. Recently, there have been many great efforts in developing flexible and stretchable sensing systems to provide biological signal monitoring platforms with intimate integration with biological surfaces. Here, this review summarizes the recent advances in flexible and stretchable sensing systems from the perspective of electronic system integration. A comprehensive general sensing system architecture is described, which consists of sensors, sensor interface circuits, memories, and digital processing units. The subsequent content focuses on the integration requirements and highlights some advanced progress for each component. Next, representative examples of flexible and stretchable sensing systems for electrophysiological, physical, and chemical information monitoring are introduced. This review concludes with an outlook on the remaining challenges and opportunities for future fully flexible or stretchable sensing systems.
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Affiliation(s)
- Li Xiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
| | - Xiangwen Zeng
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
| | - Fan Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Wanlin Jin
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
| | - Youdi Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
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24
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VLSI Structures for DNA Sequencing-A Survey. Bioengineering (Basel) 2020; 7:bioengineering7020049. [PMID: 32486381 PMCID: PMC7355958 DOI: 10.3390/bioengineering7020049] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2020] [Revised: 05/22/2020] [Accepted: 05/29/2020] [Indexed: 01/23/2023] Open
Abstract
DNA sequencing is a critical functionality in biomedical research, and technical advances that improve it have important implications for human health. Novel methods by which sequencing can be accomplished in more accurate, high-throughput, and faster ways are in development. Here, we review VLSI biosensors for nucleotide detection and DNA sequencing. Implementation strategies are discussed and split into function-specific architectures that are presented for reported design examples from the literature. Lastly, we briefly introduce a new approach to sequencing using Gate All-Around (GAA) nanowire Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) that has significant implications for the field.
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25
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Zhang H, Yu J, Yang X, Gao G, Qin S, Sun J, Ding M, Jia C, Sun Q, Wang ZL. Ion Gel Capacitively Coupled Tribotronic Gating for Multiparameter Distance Sensing. ACS NANO 2020; 14:3461-3468. [PMID: 32058695 DOI: 10.1021/acsnano.9b09549] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Developing sophisticated device architectures is of great significance to go beyond Moore's law with versatility toward human-machine interaction and artificial intelligence. Tribotronics/tribo-iontronics offer a direct way to controlling the transport properties of semiconductor devices by mechanical actions, which fundamentally relies on how to enhance the tribotronic gating effect through device engineering. Here, we propose a universal method to enhance the tribotronic properties through electric double layer (EDL) capacitive coupling. By preparing an ion gel layer on top of tribotronic graphene transistor, we demonstrate a dual-mode field effect transistor (i.e., a tribotronic transistor with capacitively coupled ion gel and an ion-gel-gated graphene transistor with a second tribotronic gate). The resulted tribotronic gating performances are greatly improved by twice for the on-state current and four times for the on/off ratio (the first mode). It can also be utilized as a multiparameter distance sensor with drain current increased by ∼600 μA and threshold voltage shifted by ∼0.8 V under a mechanical displacement of 0.25 mm (the second mode). The proposed methodology of EDL capacitive coupling offers a facile and efficient way to designing more sophisticated tribotronic devices with superior performance and multifunctional sensations.
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Affiliation(s)
- Huai Zhang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinran Yu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xixi Yang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guoyun Gao
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shanshan Qin
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jia Sun
- School of Physics and Electronics, Central South University, Changsha 410083, China
| | - Mei Ding
- College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha 410114, China
| | - Chuankun Jia
- College of Materials Science and Engineering, Changsha University of Science & Technology, Changsha 410114, China
| | - Qijun Sun
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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26
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Dou W, Tan Y. Junctionless Dual In-Plane-Gate Thin-Film Transistors with AND Logic Function on Paper Substrates. ACS OMEGA 2019; 4:21417-21420. [PMID: 31867536 PMCID: PMC6921608 DOI: 10.1021/acsomega.9b03118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 11/27/2019] [Indexed: 06/10/2023]
Abstract
Dual-gate thin-film transistors (DGTFTs) have attracted increasing attention in the past few years because of threshold voltage modulation and device logic functionality. Here, solution-processed chitosan-based proton conductors are used as the gate dielectric. The threshold voltage shift depends on the ratio of the capacitances of the two gate dielectrics. The second interesting application of DGTFTs is logic functionality. This device demonstrates AND logic function controlled by applying either 0 or -1 V to each of the gate electrodes. When both gates were simultaneously applied to be 0 V, the current flows (ON). Otherwise, the current is blocked (OFF). In order to provide a comprehensive overview of these paper devices, the planarization of paper surface and switching stability of such DGTFTs are all discussed.
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Affiliation(s)
- Wei Dou
- Key
Laboratory of Low Dimensional Quantum Structures and Quantum Control,
School of Physics and Electronics, Hunan
Normal University, Changsha 410081, People’s Republic
of China
| | - Yuanyuan Tan
- Hunan
First Normal University, Changsha 410205, People’s Republic
of China
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27
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Un H, Wang J, Pei J. Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900375. [PMID: 31637154 PMCID: PMC6794634 DOI: 10.1002/advs.201900375] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2019] [Revised: 08/02/2019] [Indexed: 05/20/2023]
Abstract
Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.
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Affiliation(s)
- Hio‐Ieng Un
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jie‐Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
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28
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Abstract
It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.
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29
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Yu M, Wan H, Cai L, Miao J, Zhang S, Wang C. Fully Printed Flexible Dual-Gate Carbon Nanotube Thin-Film Transistors with Tunable Ambipolar Characteristics for Complementary Logic Circuits. ACS NANO 2018; 12:11572-11578. [PMID: 30383353 DOI: 10.1021/acsnano.8b06748] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Semiconducting single-wall carbon nanotubes (sSWCNTs) have been widely used as the channel material for high-performance printed flexible thin-film transistors (TFTs). Due to the absorption of moisture and oxygen in air, the printed sSWCNT TFTs generally exhibit p-type characteristics only. In this paper, we report fully printed dual-gate sSWCNT TFTs that exhibit almost symmetric ambipolar characteristics. With the applied control gate voltage varying from -60 to +60 V, a threshold voltage tuning range of 27 V is achieved, allowing the device to be effectively tuned into either predominantly p-type or predominantly n-type. The tunable ambipolar characteristics are found to be very stable over a long period of time (4 months). By integrating two printed dual-gate TFTs biased with different control gate voltages, a complementary metal oxide semiconductor inverter with close to rail-to-rail output voltage swing is demonstrated. The use of a dual-gate structure for achieving n-type printed carbon nanotube TFTs is much more controllable and repeatable compared to other methods such as chemical doping. Our work shows the feasibility of implementing more sophisticated complementary logic circuits using printed flexible carbon nanotube transistors.
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Affiliation(s)
- Min Yu
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics , Peking University , Beijing 100871 , China
| | - Haochuan Wan
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
- Electrical and Systems Engineering , Washington University in St. Louis , St. Louis , Missouri 63130 , United States
| | - Le Cai
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
| | - Jinshui Miao
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
| | - Suoming Zhang
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
| | - Chuan Wang
- Electrical and Computer Engineering , Michigan State University , East Lansing , Michigan 48824 , United States
- Electrical and Systems Engineering , Washington University in St. Louis , St. Louis , Missouri 63130 , United States
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30
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Dual-gate organic phototransistor with high-gain and linear photoresponse. Nat Commun 2018; 9:4546. [PMID: 30382097 PMCID: PMC6208338 DOI: 10.1038/s41467-018-06907-6] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2017] [Accepted: 09/27/2018] [Indexed: 11/08/2022] Open
Abstract
The conversion of light into electrical signal in a photodetector is a crucial process for a wide range of technological applications. Here we report a new device concept of dual-gate phototransistor that combines the operation of photodiodes and phototransistors to simultaneously enable high-gain and linear photoresponse without requiring external circuitry. In an oppositely biased, dual-gate transistor based on a solution-processed organic heterojunction layer, we find that the presence of both n- and p-type channels enables both photogenerated electrons and holes to efficiently separate and transport in the same semiconducting layer. This operation enables effective control of trap carrier density that leads to linear photoresponse with high photoconductive gain and a significant reduction of electrical noise. As we demonstrate using a large-area, 8 × 8 imaging array of dual-gate phototransistors, this device concept is promising for high-performance and scalable photodetectors with tunable dynamic range.
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31
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Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8081341] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.
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32
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Sun Y, Wang Y, Wu Y, Wang X, Li X, Wang S, Xiao Y. A Chiral Organic Field-Effect Transistor with a Cyclodextrin Modulated Copper Hexadecafluorophthalocyanine Semiconductive Layer as the Sensing Unit. Anal Chem 2018; 90:9264-9271. [DOI: 10.1021/acs.analchem.8b01806] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Yuwei Sun
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Yong Wang
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Yifan Wu
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Xuepeng Wang
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Xianggao Li
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Shirong Wang
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Yin Xiao
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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33
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High-sensitivity ion detection at low voltages with current-driven organic electrochemical transistors. Nat Commun 2018; 9:1441. [PMID: 29650956 PMCID: PMC5897342 DOI: 10.1038/s41467-018-03932-3] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2017] [Accepted: 03/22/2018] [Indexed: 01/14/2023] Open
Abstract
Ions dissolved in aqueous media play a fundamental role in plants, animals, and humans. Therefore, the in situ quantification of the ion concentration in aqueous media is gathering relevant interest in several fields including biomedical diagnostics, environmental monitoring, healthcare products, water and food test and control, agriculture industry and security. The fundamental limitation of the state-of-art transistor-based approaches is the intrinsic trade-off between sensitivity, ion concentration range and operating voltage. Here we show a current-driven configuration based on organic electrochemical transistors that overcomes this fundamental limit. The measured ion sensitivity exceeds by one order of magnitude the Nernst limit at an operating voltage of few hundred millivolts. The ion sensitivity normalized to the supply voltage is larger than 1200 mV V−1 dec−1, which is the largest value ever reported for ion-sensitive transistors. The proposed approach is general and can be extended to any transistor technology, thus opening opportunities for high-performance bioelectronics. The organic electrochemical transistor is a type of transistor that modulates the channel current by the ion concentration and is thus explored for bio-applications. Here Ghittorelli et al. show a current-driven device configuration to increase the sensitivity by ten times than conventional approaches.
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34
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Gao G, Wan B, Liu X, Sun Q, Yang X, Wang L, Pan C, Wang ZL. Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS 2 and Black Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705088. [PMID: 29436069 DOI: 10.1002/adma.201705088] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2017] [Revised: 12/15/2017] [Indexed: 05/12/2023]
Abstract
With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm-1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.
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Affiliation(s)
- Guoyun Gao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bensong Wan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- Department of Physics, Beihang University, Beijing, 100191, China
| | - Xingqiang Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qijun Sun
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaonian Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Longfei Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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35
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Zhang Y, Li J, Li R, Sbircea DT, Giovannitti A, Xu J, Xu H, Zhou G, Bian L, McCulloch I, Zhao N. Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing. ACS APPLIED MATERIALS & INTERFACES 2017; 9:38687-38694. [PMID: 29039186 DOI: 10.1021/acsami.7b09384] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.
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Affiliation(s)
| | - Jun Li
- Department of Chemistry and Centre for Plastic Electronics, Imperial College , London SW7 2AZ, U.K
| | | | - Dan-Tiberiu Sbircea
- Department of Chemistry and Centre for Plastic Electronics, Imperial College , London SW7 2AZ, U.K
| | - Alexander Giovannitti
- Department of Chemistry and Centre for Plastic Electronics, Imperial College , London SW7 2AZ, U.K
| | | | | | | | | | - Iain McCulloch
- King Abdullah University of Science and Technology (KAUST), KSC , Thuwal 23955-6900, Saudi Arabia
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36
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Lee YH, Jang M, Lee MY, Kweon OY, Oh JH. Flexible Field-Effect Transistor-Type Sensors Based on Conjugated Molecules. Chem 2017. [DOI: 10.1016/j.chempr.2017.10.005] [Citation(s) in RCA: 121] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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37
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Detection principles of biological and chemical FET sensors. Biosens Bioelectron 2017; 98:437-448. [PMID: 28711826 DOI: 10.1016/j.bios.2017.07.010] [Citation(s) in RCA: 209] [Impact Index Per Article: 29.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2017] [Revised: 06/21/2017] [Accepted: 07/04/2017] [Indexed: 01/08/2023]
Abstract
The seminal importance of detecting ions and molecules for point-of-care tests has driven the search for more sensitive, specific, and robust sensors. Electronic detection holds promise for future miniaturized in-situ applications and can be integrated into existing electronic manufacturing processes and technology. The resulting small devices will be inherently well suited for multiplexed and parallel detection. In this review, different field-effect transistor (FET) structures and detection principles are discussed, including label-free and indirect detection mechanisms. The fundamental detection principle governing every potentiometric sensor is introduced, and different state-of-the-art FET sensor structures are reviewed. This is followed by an analysis of electrolyte interfaces and their influence on sensor operation. Finally, the fundamentals of different detection mechanisms are reviewed and some detection schemes are discussed. In the conclusion, current commercial efforts are briefly considered.
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Lim CM, Kwon JY, Cho WJ. Field-Effect Transistor Biosensor Platform Fused with Drosophila Odorant-Binding Proteins for Instant Ethanol Detection. ACS APPLIED MATERIALS & INTERFACES 2017; 9:14051-14057. [PMID: 28374580 DOI: 10.1021/acsami.6b15539] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Odorant-binding proteins (OBPs) have attracted considerable attention as sensing substrates for the development of olfactory biosensors. The Drosophila LUSH protein is an OBP and is known to bind to various alcohols. Technology that uses the LUSH protein has great potential to provide crucial information through odorant detection. In this work, the LUSH protein was used as a sensing substrate to detect the ethanol concentration. Furthermore, we fused the LUSH protein with a silicon-on-insulator (SOI)-based ion-sensitive field-effect transistor (ISFET) to measure the electrical signals that arise from molecular interactions between the LUSH and ethanol. A dual-gate sensing system for self-amplification of the signal resulting from the molecular interaction between the LUSH and ethanol was then used to achieve a much higher sensitivity than a conventional ISFET. In the end, we successfully detected ethanol at concentrations ranging between 0.001 and 1% using the LUSH OBP-fused ISFET olfactory sensor. The OBP-fused SOI-based olfactory ISFET sensor can lead to the development of handheld sensors for various purposes such as detecting toxic chemicals, narcotics control, testing for food freshness, and noninvasive diagnoses.
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Affiliation(s)
- Cheol-Min Lim
- Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
| | - Jae Young Kwon
- Department of Biological Sciences, Sungkyunkwan University , Seobu-ro, Jangan-gu, Suwon 440-746, Gyeonggi-do, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangwoon-ro, Nowon-gu, Seoul 01897, Republic of Korea
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Lim CM, Lee IK, Lee KJ, Oh YK, Shin YB, Cho WJ. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2017; 18:17-25. [PMID: 28179955 PMCID: PMC5256244 DOI: 10.1080/14686996.2016.1253409] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2016] [Revised: 10/24/2016] [Accepted: 10/24/2016] [Indexed: 05/22/2023]
Abstract
This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.
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Affiliation(s)
- Cheol-Min Lim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
| | - In-Kyu Lee
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Ki Joong Lee
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Young Kyoung Oh
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Yong-Beom Shin
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
- Corresponding author.
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
- Corresponding author.
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Liu X, Yang X, Gao G, Yang Z, Liu H, Li Q, Lou Z, Shen G, Liao L, Pan C, Lin Wang Z. Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires. ACS NANO 2016; 10:7451-7457. [PMID: 27447946 DOI: 10.1021/acsnano.6b01839] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.
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Affiliation(s)
- Xingqiang Liu
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Xiaonian Yang
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Guoyun Gao
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Zhenyu Yang
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Haitao Liu
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Qiang Li
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Caofeng Pan
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, National Center for Nanoscience and Technology (NCNST), Chinese Academy of Sciences , Beijing 100083, China
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
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Zang Y, Huang D, Di CA, Zhu D. Device Engineered Organic Transistors for Flexible Sensing Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:4549-4555. [PMID: 26833747 DOI: 10.1002/adma.201505034] [Citation(s) in RCA: 50] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2015] [Revised: 11/03/2015] [Indexed: 06/05/2023]
Abstract
Organic thin-film transistors (OFETs) represent a promising candidate for next-generation sensing applications because of the intrinsic advantages of organic semiconductors. The development of flexible sensing devices has received particular interest in the past few years. The recent efforts of developing OFETs for sensitive and specific flexible sensors are summarized from the standpoint of device engineering. The tuning of signal transduction and signal amplification are highlighted based on an overview of active-layer thickness modulation, functional receptor implantation and device geometry optimization.
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Affiliation(s)
- Yaping Zang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dazhen Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chong-An Di
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Daoben Zhu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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Sun YL, Xie D, Xu JL, Zhang C, Dai RX, Li X, Meng XJ, Zhu HW. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators. Sci Rep 2016; 6:23090. [PMID: 26980284 PMCID: PMC4793293 DOI: 10.1038/srep23090] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2015] [Accepted: 02/29/2016] [Indexed: 11/25/2022] Open
Abstract
Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect.
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Affiliation(s)
- Yi-Lin Sun
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Dan Xie
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Jian-Long Xu
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Cheng Zhang
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Rui-Xuan Dai
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Xian Li
- Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiang-Jian Meng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500Yu Tian Road, Shanghai 200083, China
| | - Hong-Wei Zhu
- School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Materials Processing Technology of MOE, Tsinghua University, Beijing 100084, China.,Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
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43
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Duarte-Guevara C, Swaminathan V, Reddy B, Huang JC, Liu YS, Bashir R. On-chip electrical detection of parallel loop-mediated isothermal amplification with DG-BioFETs for the detection of foodborne bacterial pathogens. RSC Adv 2016. [DOI: 10.1039/c6ra19685c] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023] Open
Abstract
Over one million DG-BioFETs are used for the parallel electrical detection of LAMP reactions identifying the presence of bacterial pathogens, demonstrating a miniaturized DNA-based screening platform.
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Affiliation(s)
- Carlos Duarte-Guevara
- Department of Electrical and Computer Engineering
- University of Illinois at Urbana-Champaign
- Urbana
- USA
- Micro and Nanotechnology Laboratory
| | | | - Bobby Reddy
- Micro and Nanotechnology Laboratory
- University of Illinois at Urbana-Champaign
- Urbana
- USA
| | - Jui-Cheng Huang
- Design and Technology Platform
- Taiwan Semiconductor Manufacturing Company
- Hsinchu
- Taiwan
| | - Yi-Shao Liu
- Research and Ecosystem
- Delta Electronics Inc
- 417939 Singapore
| | - Rashid Bashir
- Department of Bioengineering
- University of Illinois at Urbana-Champaign
- Urbana
- USA
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44
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Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors. Sci Rep 2015; 5:18082. [PMID: 26656113 PMCID: PMC4676022 DOI: 10.1038/srep18082] [Citation(s) in RCA: 62] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2015] [Accepted: 11/09/2015] [Indexed: 01/24/2023] Open
Abstract
Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.
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Petritz A, Wolfberger A, Fian A, Griesser T, Irimia-Vladu M, Stadlober B. Cellulose-Derivative-Based Gate Dielectric for High-Performance Organic Complementary Inverters. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:7645-56. [PMID: 25898801 DOI: 10.1002/adma.201404627] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2014] [Revised: 01/14/2015] [Indexed: 05/18/2023]
Affiliation(s)
- Andreas Petritz
- Joanneum Research, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler Straße 30, Weiz, A-8160, Austria
| | - Archim Wolfberger
- Chair of Chemistry of Polymeric Materials, University of Leoben, Otto Glöckel-Straße 2, Leoben, A-8700, Austria
| | - Alexander Fian
- Joanneum Research, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler Straße 30, Weiz, A-8160, Austria
| | - Thomas Griesser
- Chair of Chemistry of Polymeric Materials, University of Leoben, Otto Glöckel-Straße 2, Leoben, A-8700, Austria
| | - Mihai Irimia-Vladu
- Joanneum Research, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler Straße 30, Weiz, A-8160, Austria
| | - Barbara Stadlober
- Joanneum Research, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler Straße 30, Weiz, A-8160, Austria
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46
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Lee IK, Jeun M, Jang HJ, Cho WJ, Lee KH. A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen. NANOSCALE 2015; 7:16789-16797. [PMID: 26399739 DOI: 10.1039/c5nr03146j] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL(-1)) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.
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Affiliation(s)
- I-K Lee
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea.
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47
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Controlling the on/off current ratio of ferroelectric field-effect transistors. Sci Rep 2015; 5:12094. [PMID: 26160465 PMCID: PMC4498189 DOI: 10.1038/srep12094] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2015] [Accepted: 06/05/2015] [Indexed: 11/17/2022] Open
Abstract
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.
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48
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Kim B, Park J, Geier ML, Hersam MC, Dodabalapur A. Voltage-Controlled Ring Oscillators Based on Inkjet Printed Carbon Nanotubes and Zinc Tin Oxide. ACS APPLIED MATERIALS & INTERFACES 2015; 7:12009-14. [PMID: 25966019 DOI: 10.1021/acsami.5b02093] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
A voltage-controlled ring oscillator is implemented with double-gate complementary transistors where both the n- and p-channel semiconductors are deposited by inkjet printing. Top gates added to transistors in conventional ring oscillator circuits control not only threshold voltages of the constituent transistors but also the oscillation frequencies of the ring oscillators. The oscillation frequency increases or decreases linearly with applied top gate potential. The field-effect transistor materials system that yields such linear behavior has not been previously reported. In this work, we demonstrate details of a material system (gate insulator, p- and n-channel semiconductors) that results in very linear frequency changes with control gate potential. Our use of a double layer top dielectric consisting of a combination of solution processed P(VDF-TrFE) and Al2O3 deposited by atomic layer deposition leads to low operating voltages and near-optimal device characteristics from a circuit standpoint. Such functional blocks will enable the realization of printed voltage-controlled oscillator-based analog-to-digital converters.
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Affiliation(s)
- Bongjun Kim
- †Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
- ‡Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Jaeyoung Park
- ‡Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Michael L Geier
- §Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- §Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Ananth Dodabalapur
- †Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
- ‡Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
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Lee IK, Lee KH, Lee S, Cho WJ. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor. ACS APPLIED MATERIALS & INTERFACES 2014; 6:22680-6. [PMID: 25456792 DOI: 10.1021/am506805a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.
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Affiliation(s)
- In-Kyu Lee
- Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangun-ro, Nowon-gu, Seoul 139-701, Republic of Korea
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50
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Oh SJ, Wang Z, Berry NE, Choi JH, Zhao T, Gaulding EA, Paik T, Lai Y, Murray CB, Kagan CR. Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits. NANO LETTERS 2014; 14:6210-6. [PMID: 25298154 DOI: 10.1021/nl502491d] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
We study charge injection and transport in PbSe nanocrystal thin films. By engineering the contact metallurgy and nanocrystal ligand exchange chemistry and surface passivation, we demonstrate partial Fermi-level pinning at the metal-nanocrystal interface and an insulator-to-metal transition with increased coupling and doping, allowing us to design high conductivity and mobility PbSe nanocrystal films. We construct complementary nanocrystal circuits from n-type and p-type transistors realized from a single nanocrystal material by selecting the contact metallurgy.
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Affiliation(s)
- Soong Ju Oh
- Department of Materials Science and Engineering, ‡Department of Electrical and Systems Engineering, and §Department of Chemistry, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
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