Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

High-Density Reconfigurable Synaptic Transistors Targeting a Minimalist Neural Network

Enormous synaptic devices are required to build a parallel, precise, and efficient neural computing system. To further improve the energy efficiency of neuromorphic computing, a single high-density synaptic (HDS) device with multiple nonvolatile synaptic states is suggested to reduce the number of synaptic devices in the neural network, although such a powerful synaptic device is rarely demonstrated. Here, a photoisomerism material, namely, diarylethene, whose energy level varies with the wavelength of illumination is first introduced to construct a powerful HDS device. The multiple synaptic states of the HDS device are intrinsically converted under UV-vis regulation and remain nonvolatile after the removal of illumination. More importantly, the conversion is reconfigurable and reversible under different light conditions, and the synaptic characteristics are comprehensively mimicked in each state. Finally, compared with a two-layer multilayer perceptron (MLP) architecture based on static synaptic devices, the HDS device-based architecture reduces the device number by 16 times to achieve a minimalist neural computing structure. The invention of the HDS device opens up a revolutionary paradigm for the establishment of a brain-like network.

Asymmetric Dressing of WSe2 with (Macro)molecular Switches: Fabrication of Quaternary-Responsive Transistors

The forthcoming saturation of Moore's law has led to a strong demand for integrating analogue functionalities within semiconductor-based devices. As a step toward this goal, we fabricate quaternary-responsive WSe₂-based field-effect transistors (FETs) whose output current can be remotely and reversibly controlled by light, heat, and electric field. A photochromic silane-terminated spiropyran (SP) is chemisorbed on SiO₂ forming a self-assembled monolayer (SAM) that can switch from the SP to the merocyanine (MC) form in response to UV illumination and switch back by either heat or visible illumination. Such a SAM is incorporated at the dielectric-semiconductor interface in WSe₂-based FETs. Upon UV irradiation, a drastic decrease in the output current of 82% is observed and ascribed to the zwitterionic MC isomer acting as charge scattering site. To provide an additional functionality, the WSe₂ top surface is coated with a ferroelectric co-polymer layer based on poly(vinylidene fluoride-co-trifluoroethylene). Because of its switchable inherent electrical polarization, it can promote either the accumulation or depletion of charge carriers in the WSe₂ channel, thereby inducing a current modulation with 99% efficiency. Thanks to the efficient tuning induced by the two components and their synergistic effects, the device polarity could be modulated from n-type to p-type. Such a control over the carrier concentration and device polarity is key to develop 2D advanced electronics. Moreover, the integration strategy of multiple stimuli-responsive elements into a single FET allows us to greatly enrich its functionality, thereby promoting the development for More-than-Moore technology.

Visualizing Material Processing via Photoexcitation-Controlled Organic-Phase Aggregation-Induced Emission

Aggregation-induced emission (AIE) has been much employed for visualizing material aggregation and self-assembly. However, water is generally required for the preparation of the AIE aggregates, the operation of which limits numerous material processing behaviors. Employing hexathiobenzene-based small molecules, monopolymers, and block copolymers as different material prototypes, we herein achieve AIE in pure organic phases by applying a nonequilibrium strategy, photoexcitation-controlled aggregation. This strategy enabled a dynamic change of molecular conformation rather than chemical structure upon irradiation, leading to a continuous aggregation-dependent luminescent enhancement (up to ~200-fold increase of the luminescent quantum yield) in organic solvents. Accompanied by the materialization of the nonequilibrium strategy, photoconvertible self-assemblies with a steady-state characteristic can be achieved upon organic solvent processing. The visual monitoring with the luminescence change covered the whole solution-to-film transition, as well as the in situ photoprocessing of the solid-state materials.

Phosphorescent Soft Salt Based on Platinum(II) Complexes: Photophysics, Self-Assembly, Thermochromism, and Anti-counterfeiting Application

A new platinum(II) complex-based soft salt S1, ([Pt(tpp)(ed)]⁺[Pt(pba) (CN)₂]^-) (tpp = 2-(4-(trifluoromethyl)phenyl)pyridine, ed = ethane-1,2-diamine, pba = 4-(2-pyridyl)benzaldehyde), was designed and synthesized. UV-visible absorption and photoluminescence (PL) spectra were studied to elucidate the nature of ground and excited states. The soft salt complex was found to show self-assembly properties with the assistance of electrostatic, π-π stacking, and Pt···Pt interactions, resulting in the remarkable emergence of low-energy absorption and PL bands. Morphological transformation of S1 from undefined nanosized aggregates to nanofibers with different solvent compositions has been demonstrated. Interestingly, a luminescent polymer film was prepared by doping S1 into a polyethylene glycol matrix. The film displayed distinctive emission color change from yellow to red upon heating. Eventually, a high-level anti-counterfeiting application was accomplished using a time-resolved imaging technique based on the thermochromic luminescence property and long emission decay time displayed by S1. It is anticipated that this work can provide deep insights into the control of intermolecular interactions between cationic and anionic complexes of soft salt upon exposure to different external stimuli, resulting in the development of smart luminescent materials for various applications.

Photocontrollable Modulation of Frontier Molecular Orbital Energy Levels of Cyclopentenone-Based Diarylethenes

Photoswitchable diarylethenes provide a unique opportunity to optically modulate frontier molecular orbital energy levels, thereby opening an avenue for the design of electronic devices such as photocontrollable organic field-effect transistors (OFETs). In the present work, the absolute position of the frontier orbital levels of nonsymmetrical diarylethenes based on a cyclopentenone bridge has been studied using cyclic voltammetry and density functional theory (DFT) calculations. It has been shown that varying heteroaromatic substituents make it possible to change the absolute positions of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of both diarylethene photoisomers. The data obtained are used to refine the operation mechanism of the previously developed OFET devices, employing the cyclopentenone-derived diarylethenes at the dielectric/semiconductor interface.

Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid-State Order

Organic resistive memory (ORM) offers great promise for next-generation high-density multilevel-cell (MLC) data storage. However, the fine tuning of crystalline order among its active layer still remains challenging, which largely restricts ORM behavior. Here, an exceptional solid-state transition from disordered orientations to highly-uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring. Two diketopyrrolopyrrole-based small molecular analogues (NI₁ TDPP and NI₂ TDPP) are demonstrated to display different symmetry. The asymmetric NI₁ TDPP shows an irregular solid-state texture, while the centro-symmetric NI₂ TDPP conforms to an ordered out-of-plane single-crystalline pattern that aligns with the foremost charge transportation along the substrate normal, and exhibits excellent MLC memory characteristics. Moreover, this highly oriented pattern guarantees the large-area film uniformity, leading to the twofold increase in the yield of as-fabricated ORM devices. This study reveals that the solid-state crystalline nanostructural order of organic materials can be controlled by reasonable molecular design to actuate high-performance organic electronic circuits.

Artificial Skin Perception

Skin is the largest organ, with the functionalities of protection, regulation, and sensation. The emulation of human skin via flexible and stretchable electronics gives rise to electronic skin (e-skin), which has realized artificial sensation and other functions that cannot be achieved by conventional electronics. To date, tremendous progress has been made in data acquisition and transmission for e-skin systems, while the implementation of perception within systems, that is, sensory data processing, is still in its infancy. Integrating the perception functionality into a flexible and stretchable sensing system, namely artificial skin perception, is critical to endow current e-skin systems with higher intelligence. Here, recent progress in the design and fabrication of artificial skin perception devices and systems is summarized, and challenges and prospects are discussed. The strategies for implementing artificial skin perception utilize either conventional silicon-based circuits or novel flexible computing devices such as memristive devices and synaptic transistors, which enable artificial skin to surpass human skin, with a distributed, low-latency, and energy-efficient information-processing ability. In future, artificial skin perception would be a new enabling technology to construct next-generation intelligent electronic devices and systems for advanced applications, such as robotic surgery, rehabilitation, and prosthetics.

Compliance current controlled volatile and nonvolatile memory in Ag/CoFe2O4/Pt resistive switching device

We report on the resistive memory effects of a Ag/CoFe₂O₄/Pt device and a deterministic conversion between volatile and nonvolatile resistive switching (RS) memory through the tuning of current compliance (I _CC). For the smaller I _CC (10^-4 A) the device exhibits volatile RS behavior with an atomically sized conducting filament showing the quantum conductance. For an intermediate I _CC (10^-2 A) nonvolatile bipolar RS behavior is observed, which could originate from the formation and rupture of filament consisting of Ag ions. The high resistance state (HRS) of the device shows a semiconducting conduction mechanism, whereas the low resistance state (LRS) was found to be Ohmic in nature. The temperature dependent resistance studies and magnetization studies indicated that the electrochemical metallization plays a dominant role in the resistive switching process for volatile and nonvolatile modes through the formation of Ag conducting filaments. For higher I _CC (10^-1 A) the device permanently switches to LRS. The irreversible RS memory behaviors, observed for higher I _CC, could be attributed to the formation of a thick and stable conducting channel formed of oxygen vacancies and Ag ions. The compliance current controlled resistive switching modes with a large memory window make the present device a potential candidate to pave the way for future resistive switching devices.

Biologically Plausible Artificial Synaptic Array: Replicating Ebbinghaus' Memory Curve with Selective Attention

The nature of repetitive learning and oblivion of memory enables humans to effectively manage vast amounts of memory by prioritizing information for long-term storage. Inspired by the memorization process of the human brain, an artificial synaptic array is presented, which mimics the biological memorization process by replicating Ebbinghaus' forgetting curve. To construct the artificial synaptic array, signal-transmitting access transistors and artificial synaptic memory transistors are designed using indium-gallium-zinc-oxide and poly(3-hexylthiophene), respectively. To secure the desired performance of the access transistor in regulating the input signal to the synaptic transistor, the content of gallium in the access transistor is optimized. In addition, the operation voltage of the synaptic transistor is carefully selected to achieve memory-state efficiency. Repetitive learning characterizing Ebbinghaus' oblivion curves is realized using an artificial synaptic array with optimized conditions for both transistor components. This successfully demonstrates a biologically plausible memorization process. Furthermore, selective attention for information prioritization in the human brain is mimicked by selectively applying repetitive learning to a synaptic transistor with a high memory state. The demonstrated biologically plausible artificial synaptic array provides great scope for advancement in bioinspired electronics.

Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field-Effect Transistors

Organic transistors are key elements for flexible, wearable, and biocompatible logic applications. Multiresponsivity is highly sought-after in organic electronics to enable sophisticated operations and functions. Such a challenge can be pursued by integrating more components in a single device, each one responding to a specific external stimulus. Here, the first multiresponsive organic device based on a photochromic-ferroelectric organic field-effect transistor, which is capable of operating as nonvolatile memory with 11 bit memory storage capacity in a single device, is reported. The memory elements can be written and erased independently by means of light or an electric field, with accurate control over the readout signal, excellent repeatability, fast response, and high retention time. Such a proof of concept paves the way toward enhanced functional complexity in optoelectronics via the interfacing of multiple components in a single device, in a fully integrated low-cost technology compatible with flexible substrates.

Flexible Artificial Sensory Systems Based on Neuromorphic Devices

Emerging flexible artificial sensory systems using neuromorphic electronics have been considered as a promising solution for processing massive data with low power consumption. The construction of artificial sensory systems with synaptic devices and sensing elements to mimic complicated sensing and processing in biological systems is a prerequisite for the realization. To realize high-efficiency neuromorphic sensory systems, the development of artificial flexible synapses with low power consumption and high-density integration is essential. Furthermore, the realization of efficient coupling between the sensing element and the synaptic device is crucial. This Review presents recent progress in the area of neuromorphic electronics for flexible artificial sensory systems. We focus on both the recent advances of artificial synapses, including device structures, mechanisms, and functions, and the design of intelligent, flexible perception systems based on synaptic devices. Additionally, key challenges and opportunities related to flexible artificial perception systems are examined, and potential solutions and suggestions are provided.

Recent Process of Flexible Transistor-Structured Memory

Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.

A nanograting-based flexible and stretchable waveguide for tactile sensing

Based on the related characteristics of optical waveguide and flexible optical materials, a flexible and stretchable optical waveguide structure oriented to tactile perception is proposed. The sensing principle of optical waveguide is based on mechanical deformation caused by output light loss. It overcomes the shortcomings of traditional optical waveguide devices, which are unable to conform to irregular surface. The flexible and stretchable optical waveguide is fabricated with nanoreplica molding method, and it has been applied to the measurement of pressure and strain in the field of tactile sensing. The flexible and stretchable optical waveguide had a strain detection range of 0 to 12.5%, and the external force detection range is from 0 to 23 × 10-3 N.

Simultaneous Incorporation of Two Types of Azo-Groups in the Side Chains of a Conjugated D-A Polymer for Logic Control of the Semiconducting Performance by Light Irradiation

A new design strategy for photoresponsive semiconducting polymer with tri-stable semiconducting states is reported by simultaneous incorporation of tetra-ortho-methoxy-substituted azobenzene (mAzo) and arylazopyrazole (pAzo) in the side chains. The trans-to-cis transformations for mAzo and pAzo groups can sequentially occur within the polymer thin film after sequential 560 and 365 nm light irradiation. Remarkably, the trans-cis isomerization of mAzo and pAzo groups can modulate the thin film crystallinity. Accordingly, the performances of the resulting field-effect transistors (FETs) can be reversibly modulated, leading to tri-stable semiconducting states after sequential 560, 365, and 470 nm light irradiation. Therefore, the device performance can be logically controlled by light irradiation at three different wavelengths. In addition, with light irradiation and device current as the input and output signals, the three-value logic gate by using single FET device can be successfully mimicked.

Light-Switchable and Self-Healable Polymer Electrolytes Based on Dynamic Diarylethene and Metal-Ion Coordination

Self-healing polymer electrolytes are reported with light-switchable conductivity based on dynamic N-donor ligand-containing diarylethene (DAE) and multivalent Ni²⁺ metal-ion coordination. Specifically, a polystyrene polymer grafted with poly(ethylene glycol-r-DAE)acrylate copolymer side chains was effectively cross-linked with nickel(II) bis(trifluoromethanesulfonimide) (Ni(TFSI)₂) salts to form a dynamic network capable of self-healing with fast exchange kinetics under mild conditions. Furthermore, as a photoswitching compound, the DAE undergoes a reversible structural and electronic rearrangement that changes the binding strength of the DAE-Ni²⁺ complex under irradiation. This can be observed in the DAE-containing polymer electrolyte where irradiation with UV light triggers an increase in the resistance of solid films, which can be recovered with subsequent visible light irradiation. The increase in resistance under UV light irradiation indicates a decrease in ion mobility after photoswitching, which is consistent with the stronger binding strength of ring-closed DAE isomers with Ni²⁺. ¹H-¹⁵N heteronuclear multiple-bond correlation nuclear magnetic resonance (HMBC NMR) spectroscopy, continuous wave electron paramagnetic resonance (cw EPR) spectroscopy, and density functional theory (DFT) calculations confirm the increase in binding strength between ring-closed DAE with metals. Rheological and in situ ion conductivity measurements show that these polymer electrolytes efficiently heal to recover their mechanical properties and ion conductivity after damage, illustrating potential applications in smart electronics.

Trap-Assisted Charge Storage in Titania Nanocrystals toward Optoelectronic Nonvolatile Memory

Transistor-based memories are of particular significance in the pursuit of next-generation nonvolatile memories. The charge storage medium in a transistor-based memory is pivotal to the device performance. In this report, nitrogen doping titania nanocrystals (N-TiO₂ NCs) synthesized through a low-temperature nonhydrolytic method are used as the charge storage medium in a graphene transistor-based memory. The decoration of the N-TiO₂ NCs enables the device to perform as an ultraviolet (UV) light-programmable nonvolatile optoelectronic memory. Multilevel nonvolatile information recording can be realized through accurate control of the incident light dose, which is ascribed to the vast and firm hole trapping abilities of the N-TiO₂ NCs induced by the N dopant. Accordingly, a positive gate voltage can be used to erase the programmed state by promoting the recombination of stored holes in N-TiO₂ NCs. This study manifests the importance of trap engineering for information storage and provides an alternative path toward nonvolatile optoelectronic memory.

Highly Sensitive Artificial Visual Array Using Transistors Based on Porphyrins and Semiconductors

Artificial visual systems with image sensing and storage functions have considerable potential in the field of artificial intelligence. Light-stimulated synaptic devices can be applied for neuromorphic computing to build artificial visual systems. Here, optoelectronic synaptic transistors based on 5,15-(2-hydroxyphenyl)-10,20-(4-nitrophenyl)porphyrin (TPP) and dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT) are demonstrated. By utilizing stable TPP with high light absorption, the number of photogenerated carriers in the transport layer can be increased significantly. The devices exhibit high photosensitivity and tunable synaptic plasticity. The synaptic weight can be effectively modulated by the intensity, width, and wavelength of the light signals. Due to the high light absorption of TPP, an ultrasensitive artificial visual array based on these devices is developed, which can detect weak light signals as low as 1 µW cm^-2 . Low-voltage operation is further demonstrated. Even with applied voltages as low as -70 µV, the devices can still show obvious responses, leading to an ultralow energy consumption of 1.4 fJ. The devices successfully demonstrate image sensing and storage functions, which can accurately identify visual information. In addition, the devices can preprocess information and achieve noise reduction. The excellent synaptic behavior of the TPP-based electronics suggests their good potential in the development of new intelligent visual systems.

Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor

Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron-hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes.

Tunable Photomechanics in Diarylethene-Driven Liquid Crystal Network Actuators

The response of soft actuators made of stimuli-responsive materials can be phenomenologically described by a stimulus-deformation curve, depicting the controllability and sensitivity of the actuator system. Manipulating such stimulus-deformation curve allows fabricating soft microrobots with reconfigurable actuation behavior, which is not easily achievable using conventional materials. Here, we report a light-driven actuator based on a liquid crystal polymer network containing diarylethene (DAE) photoswitches as cross-links, in which the stimulus-deformation curve under visible-light illumination is tuned with UV light. The tuning is brought about by the reversible electrocyclization of the DAE units. Because of the excellent thermal stability of the visible-absorbing closed-form DAEs, the absorbance of the actuator can be optically fixed to a desired value, which in turn dictates the efficiency of photothermally induced deformation. We employ the controllability in devising a logical AND gate with macroscopic output, i.e., an actuator that bends negligibly under UV or visible light irradiation, but with profound shape change when addressed to both simultaneously. The results provide design tools for reconfigurable microrobotics and polymer-based logic gating.

Homogeneity Permitted Robust Connection for Additive Manufacturing Stretchable Electronics

Interface is the Achilles' heel in flexible electronics, where slipping, delamination, or cracking resulting from the intrinsic mechanical property mismatch of different materials might fail the device or cause degradation. Robust connections with strong interfacial strength and low interfacial impedance are highly desired in all kinds of flexible devices, especially when they require stretchability. Here, a new strategy of employing homogeneity is proposed to facilely achieve robust connection without introducing a third-party interlayer. The key to this strategy is implementing different functions in the same component materials, and in this work, this strategy is demonstrated by exploring the uniformity of carbon nanotube (CNT) in thermoplastic polyurethane (TPU) elastomer. Tuning the uniformity of CNT in TPU elastomer, two kinds of CNT-TPU composites (CTCs) are fabricated. They present contrasting properties of conductivity (281 folds), Young's modulus (7.1 folds), and strain sensitivity (15.7 folds) with the same weight fraction of CNT (15 wt %), and thus they can respectively act as strain sensor and interconnector in all-CNT-based stretchable strain monitoring electronics. The interlocking effect caused by spontaneous entanglement of surface polymer chains and the reconstruction of percolation network at the interface during drying confer the connection with robustness. The practical value of this strategy has been exemplified by the fabrication of a robust epidermis device via additive manufacturing. This epidermis device is patterned in a fractal motif for conformal contact and can sensitively monitor body motions and radial artery pulse.

Arene Substitution Design for Controlled Conformational Changes of Dibenzocycloocta-1,5-dienes

We report that an agile eight-membered cycloalkane can be stabilized by fusing a benzene ring on each side, substituted with proper functional groups. The conformational change of dibenzocycloocta-1,5-diene (DBCOD), a rigid-flexible-rigid organic moiety, from its Boat to Chair conformation requires an activation energy of 42 kJ/mol, which is substantially lower than those of existing submolecular shape-changing units. Experimental data corroborated by theoretical calculations demonstrate that intramolecular hydrogen bonding can stabilize Boat, whereas electron repulsive interaction from opposing ester substituents favors Chair. Intramolecular hydrogen bonding formed by 1,10-diamide substitution stabilizes Boat, spiking the temperature at which Boat and Chair can readily interchange from -60 to 60 °C. Concomitantly this intramolecular attraction raises the energy barrier from 42 kJ/mol for unsubstituted DBCOD to 68 kJ/mol for diamide-substituted DBCOD. Remarkably, this value falls within the range of the activation energy of highly efficient enzyme-catalyzed biological reactions. With shape changes once considered only possible with high energy, our work reveals a potential pathway exemplified by a specific submolecular structure to achieve low-energy-driven shape changes for the first time. The intrinsic cycle stability and high-energy output systems that would incur damage under high-energy stimuli could particularly benefit from this new kind of low-energy-driven shape-changing mechanism. This work has laid the basis to construct systems for low-energy-driven stimuli-responsive applications, hitherto a challenge to overcome.

Cyclization from Higher Excited States of Diarylethenes Having a Substituted Azulene Ring

The cyclization reaction of diarylethenes having an azulene ring occurs only via higher excited states. Novel diarylethenes having an azulene ring with a strong donor or acceptor were synthesized and examined in these reactions. A derivative having an electron-donating 1,3-benzodithiol-2-ylidenemethyl group at the 1-position of the azulene ring showed photochromism, whereas neither a derivative having a π-conjugated electron-donating group at the 3-position of the azulene ring nor derivatives having a π-conjugated electron-withdrawing group at the 1- or 3-position of the azulene ring showed any photochromism. The photoreactivities of these compounds were explained by calculating forces and bond orders on the excited states using density functional theory (DFT) and time-dependent (TD)-DFT.

High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate

A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 10⁵ , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.

3D Layer-By-Layer Pd-Containing Nanocomposite Platforms for Enhancing the Performance of Hydrogen Sensors

Herein, a nanowelding technique is adopted to fabricate three-dimensional layer-by-layer Pd-containing nanocomposite structures with special properties. Nanowires fabricated from noble metals (Pd, Pt, Au, and Ag) were used to prepare Pd-Pd nanostructures and Pd-Au, Pd-Pt, Pd-Ag, and Pd-Pt-Au nanocomposite structures by controlling the welding temperature. The recrystallization behavior of the welded composite materials was observed and analyzed. In addition, their excellent mechanical and electrical properties were confirmed by performing 10,000 bending test cycles and measuring the resistances. Finally, flexible and wearable nanoheaters and gas sensors were fabricated using our proposed method. In comparison with conventional techniques, our proposed method can not only easily achieve sensors with a large surface area and flexibility but also improve their performance through the addition of catalyst metals. A gas sensor fabricated using the Pd-Au nanocomposites demonstrated 3.9-fold and 1.1-fold faster H₂ recovery and response, respectively, than a pure Pd-Pd gas sensor device. Moreover, the Pd-Ag nanocomposite exhibited a high sensitivity of 5.5% (better than that of other fabricated gas sensors) for 1.6% H₂ concentration. Therefore, we believe that the fabricated nanocomposites appear promising for wide applications in wearable gas sensors, flexible optical devices, and flexible catalytic devices.

Two-Dimensional Cs2Pb(SCN)2Br2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior

The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs₂Pb(SCN)₂Br₂/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >10⁶ over 10⁴ s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs₂Pb(SCN)₂Br₂/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 10³. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.

Photochromic organic solar cells based on diarylethenes

Photovoltaic devices that switch color depending on illumination conditions may find application in future smart window applications. Here a photochromic diarylethene molecule is used as sensitizer in a ternary bulk heterojunction blend, employing poly(4-butylphenyldiphenylamine) (poly-TPD) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) for the transport of holes and electrons, respectively. Sandwiched between two electrodes, the blend creates a photochromic photovoltaic device that changes color, light absorption, and photon-to-electron conversion efficiency in the visible spectral range after having been illuminated with UV light.

A Conjugated Polymer Containing Arylazopyrazole Units in the Side Chains for Field-Effect Transistors Optically Tunable by Near Infra-Red Light

Optically tunable field-effect transistors (FETs) with near infra-red (NIR) light show promising applications in various areas. Now, arylazopyrazole groups are incorporated in the side chains of a semiconducting donor-acceptor (D-A) polymer. The cis-trans interconversion of the arylazopyrazole can be controlled by 980 nm and 808 nm NIR light irradiation, by utilizing NaYF₄ :Yb,Tm upconversion nanoparticles and the photothermal effect of conjugated D-A polymers, respectively. This reversible transformation affects the interchain packing of the polymer thin film, which in turn reversibly tunes the semiconducting properties of the FETs by the successive 980 nm and 808 nm light irradiation. The resultant FETs display fast response to NIR light, good resistance to photofatigue, and stability in storage for up to 120 days. These unique features will be useful in future memory and bioelectronic wearable devices.

Well-ordered nanoparticle arrays for floating gate memory applications

A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs) is fabricated as a metal-oxide-semiconductor capacitor structure. With superior control on the size, shape and position of nanoparticles, the presented nano-floating gate memory (NFGM) device possesses almost perfect precision of device geometry. The well-ordered Au NPs embedded within the memory device exhibit large memory window at low operation voltages (8.8V @ ± 15V), fast operation time (<10^-4 s) and good retention (up to 10⁷ s). In this work, the structural properties of the NFGM device are correlated with the examined electrical properties. The current results are compared with the other studies in the literature to emphasis the advantages of the precise ordering and geometry of the NPs.

Enlightening Materials with Photoswitches

Incorporating molecular photoswitches into various materials provides unique opportunities for controlling their properties and functions with high spatiotemporal resolution using remote optical stimuli. The great and largely still untapped potential of these photoresponsive systems has not yet been fully exploited due to the fundamental challenges in harnessing geometrical and electronic changes on the molecular level to modulate macroscopic and bulk material properties. Herein, progress made during the past decade in the field of photoswitchable materials is highlighted. After pointing to some general design principles, materials with an increasing order of the integrated photoswitchable units are discussed, spanning the range from amorphous settings over surfaces/interfaces and supramolecular ensembles, to liquid crystalline and crystalline phases. Finally, some potential future directions are pointed out in the conclusion. In view of the exciting recent achievements in the field, the future emergence and further development of light-driven and optically programmable (inter)active materials and systems are eagerly anticipated.

Photoelectronic memory based on nitride multiple quantum wells and the hybrid of graphene nanoflakes and a-IGZO film

Optical memories are vitally important for the future development of high speed and low cost information technologies. Current optical memory devices still suffer from difficulties such as scaling-down of size, short-life expectancy, and non-volatility without the control of a gate electrode. To resolve these obstacles, a robust photoelectronic memory device is designed and demonstrated based on the integration of amorphous InGaZnO (a-IGZO), GNSs, and nitride multiple-quantum-wells light-emitting diode (MQWs LED). Utilizing the inherent nature of the band alignment between a-IGZO and graphene nanosheets (GNSs), electrons can transfer from a-IGZO to GNSs causing a persistent photoconductivity (PPC). With the long-lasting lifetime of PPC, the signal can be written optically and the encoded signal can be read both electrically and optically. The read and write processes reveal little current degradation for more than 10,000 sec, even repeated for more than hundred times. The device can convert invisible information to visible signal, and the encoded information can be simply erased under a reversed bias without a gate electrode. In addition, the memory device possesses a simple vertically stacked structure for 3D integration, and it is compatible with established technologies.

Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation

Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized freestanding single-crystalline ferroelectric barium titanate (BaTiO₃) membranes with a damage-free lifting-off process. Our BaTiO₃ membranes can undergo a ~180° folding during an in situ bending test, demonstrating a super-elasticity and ultraflexibility. We found that the origin of the super-elasticity was from the dynamic evolution of ferroelectric nanodomains. High stresses modulate the energy landscape markedly and allow the dipoles to rotate continuously between the a and c nanodomains. A continuous transition zone is formed to accommodate the variant strain and avoid high mismatch stress that usually causes fracture. The phenomenon should be possible in other ferroelectrics systems through domain engineering. The ultraflexible epitaxial ferroelectric membranes could enable many applications such as flexible sensors, memories, and electronic skins.

Light-Controllable Ionic Conductivity in a Polymeric Ionic Liquid

Polymeric ionic liquids (PILs) have attracted considerable attention as electrolytes with high stability and mechanical durability. Light-responsive materials are enabling for a variety of future technologies owing to their remote and noninvasive manipulation, spatiotemporal control, and low environmental impact. To address this potential, responsive PIL materials based on diarylethene units were designed to undergo light-mediated conductivity changes. Key to this modulation is tuning of the cationic character of the imidazolium bridging unit upon photoswitching. Irradiation of these materials with UV light triggers a circa 70 % drop in conductivity in the solid state that can be recovered upon subsequent irradiation with visible light. This light-responsive ionic conductivity enables spatiotemporal and reversible patterning of PIL films using light. This modulation of ionic conductivity allows for the development of light-controlled electrical circuits and wearable photodetectors.

Modulating the luminance of organic light-emitting diodes via optical stimulation of a photochromic molecular monolayer at transparent oxide electrode

Self-assembled monolayers (SAMs) deposited on bottom electrodes are commonly used to tune charge carrier injection or blocking in optoelectronic devices. Beside the enhancement of device performance, the fabrication of multifunctional devices in which the output can be modulated by multiple external stimuli remains a challenging target. In this work, we report the functionalization of an indium tin oxide (ITO) electrode with a SAM of a diarylethene derivative designed for optically control the electronic properties. Following the demonstration of dense SAM formation and its photochromic activity, as a proof-of-principle, an organic light-emitting diode (OLED) embedding the light-responsive SAM-covered electrode was fabricated and characterized. Optically addressing the two-terminal device by irradiation with ultraviolet light doubles the electroluminescence. The original value can be restored reversibly by irradiation with visible light. This expanded functionality is based on the photoinduced modulation of the electronic structure of the diarylethene isomers, which impact the charge carriers' confinement within the emissive layer. This approach could be successfully exploited in the field of opto-communication technology, for example to fabricate opto-electronic logic circuits.

Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe2 Interfaced with a Bicomponent Photochromic Layer: From High-Mobility Transistors to Flexible Multilevel Memories

The interfacing of 2D materials (2DMs) with photochromic molecules provides an efficient solution to reversibly modulate their outstanding electronic properties and offers a versatile platform for the development of multifunctional field-effect transistors (FETs). Herein, optically switchable multilevel high-mobility FETs based on few-layer ambipolar WSe₂ are realized by applying on its surface a suitably designed bicomponent diarylethene (DAE) blend, in which both hole and electron transport can be simultaneously modulated for over 20 cycles. The high output current modulation efficiency (97% for holes and 52% for electrons) ensures 128 distinct current levels, corresponding to a data storage capacity of 7 bit. The device is also implemented on a flexible and transparent poly(ethylene terephthalate) substrate, rendering 2DM/DAE hybrid structures promising candidates for flexible multilevel nonvolatile memories.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

A Flexible Carbon Nanotube Sen-Memory Device

In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈10⁶ , a long-term retention of ≈10⁸ s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Organic field-effect transistor-based flexible sensors

Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.

Switchable slow relaxation of magnetization in photochromic dysprosium(iii) complexes manipulated by a dithienylethene ligand

The admirable photochromic and magnetic properties of two dithienylethene-based complexes can be modulated with UV/Vis light irradiation.

Polymer-guided assembly of inorganic nanoparticles

The self-assembly of inorganic nanoparticles is of great importance in realizing their enormous potentials for broad applications due to the advanced collective properties of nanoparticle ensembles. Various molecular ligands (e.g., small molecules, DNAs, proteins, and polymers) have been used to assist the organization of inorganic nanoparticles into functional structures at different hierarchical levels. Among others, polymers are particularly attractive for use in nanoparticle assembly, because of the complex architectures and rich functionalities of assembled structures enabled by polymers. Polymer-guided assembly of nanoparticles has emerged as a powerful route to fabricate functional materials with desired mechanical, optical, electronic or magnetic properties for a broad range of applications such as sensing, nanomedicine, catalysis, energy storage/conversion, data storage, electronics and photonics. In this review article, we summarize recent advances in the polymer-guided self-assembly of inorganic nanoparticles in both bulk thin films and solution, with an emphasis on the role of polymers in the assembly process and functions of resulting nanostructures. Precise control over the location/arrangement, interparticle interaction, and packing of inorganic nanoparticles at various scales are highlighted.

Multilevel Photonic Transistor Memory Devices Using Conjugated/Insulated Polymer Blend Electrets

Photonic data storage has diverse optoelectronic applications such as optical sensing and recording, integrated image circuits, and multibit-storage flash memory. In this study, we employ conjugated/insulated polymer blends as the charge storage electret for photonic field-effect transistor memory devices by exploring the blend composition, energy level alignment, and morphology on the memory characteristics. The studied conjugated polymers included poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PF), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[{2,5-di(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene}-co-{3-(4'-(3″,7″-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}-co-{3-(3'-(3',7'-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}] (SY-PPV), and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), and the insulated polymers were polystyrene (PS) and poly(methyl methacrylate) (PMMA). The photonic memory device using the PF/PS blend electret exhibited a dynamic switching behavior with light-writing and voltage-erasing processes both within only 1 s, along with a high contrast on the current on/off ratio between "Photo-On" and "Electrical-OFF" over 10⁶ and the decent retention time for more than 3 months. In addition, the multilevel memory behavior could be observed using different light sources of 405, 450, and 520 nm or energy intensity, which was supported by surface potential analysis. The characteristics were superior to those of the devices using PF/PMMA blend due to the higher charge storage behavior of PS supported by fluorescence analysis. The PF/PS blend film prepared from the chlorobenzene solvent exhibited mesh-like and aggregated PF domains in the PS matrix and enhanced the contact surface area between the semiconductor and blend electret, leading to a higher memory window. The photonic memory behavior was also observed in the blend electrets of PS with the low band gap polymer, MEH-PPV, SY-PPV, or F8BT, by changing the photoresponsive light sources. Our study demonstrated a new electret system to apply on the multilevel photonic memory devices.