Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La_{0.7}Sr_{0.3}MnO_{3}/BaTiO_{3}/La_{0.7}Sr_{0.3}MnO_{3} multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.

Ferromagnetic, Ferroelectric, and Optical Modulated Multiple Resistance States in Multiferroic Tunnel Junctions

In data storage devices, spin, ferroelectric, or optical indices have been utilized as information carriers, and the binate couplings among the three parameters are explored to increase the resistance states and resultant data-density. However, studies holding all of the three information indices are still blank, where the increasing number of information carriers from previous two to three provides opportunities for inducing novel phenomena and distinct resistance states. In this work, using the spin-electron-photon resolved theory, we demonstrate the feasibility of spin, ferroelectric, and optical interactions, which are further detected by a spin- and ferroelectric-modulated photovoltaic effect in La_2/3Sr_1/3MnO₃/BiFeO₃/Fe₄N multiferroic tunnel junctions (MFTJs). Moreover, based on the spin- and ferroelectric-induced four resistance states in MFTJs, the special photovoltaic effect shall split each resistance state into light-on and light-off switching states, which finally lead to multiple resistance states. Besides, nearly 100% spin-polarized photocurrent and large tunneling magnetoresistance (electroresistance) are realized in these MFTJs. These results reveal that interacted spin, ferroelectric, and optical indices can simultaneously serve as information carriers in storage devices, which provide guidance for developing efficient data memories.

Colossal tunability in high frequency magnetoelectric voltage tunable inductors

The electrical modulation of magnetization through the magnetoelectric effect provides a great opportunity for developing a new generation of tunable electrical components. Magnetoelectric voltage tunable inductors (VTIs) are designed to maximize the electric field control of permeability. In order to meet the need for power electronics, VTIs operating at high frequency with large tunability and low loss are required. Here we demonstrate magnetoelectric VTIs that exhibit remarkable high inductance tunability of over 750% up to 10 MHz, completely covering the frequency range of state-of-the-art power electronics. This breakthrough is achieved based on a concept of magnetocrystalline anisotropy (MCA) cancellation, predicted in a solid solution of nickel ferrite and cobalt ferrite through first-principles calculations. Phase field model simulations are employed to observe the domain-level strain-mediated coupling between magnetization and polarization. The model reveals small MCA facilitates the magnetic domain rotation, resulting in larger permeability sensitivity and inductance tunability.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

Probing magnetic interactions in metal-organic frameworks and coordination polymers microscopically

Materials with magnetic interactions between their metal centres play a tremendous role in modern technologies and can exhibit unique physical phenomena. In recent years, magnetic metal-organic frameworks and coordination polymers have attracted significant attention because their unique structural flexibility enables them to exhibit multifunctional magnetic properties or unique magnetic states not found in the conventional magnetic materials, such as metal oxides. Techniques that enable the magnetic interactions in these materials to be probed at the atomic scale, long established to be key for developing other magnetic materials, are not well established for studying metal-organic frameworks and coordination polymers. This review focuses on studies where metal-organic frameworks and coordination polymers have been examined using such microscopic probes, with a particular focus on neutron scattering and density-functional theory, the most-well established experimental and computational techniques for understanding magnetic materials in detail. This paper builds on a brief introduction to these techniques to describe how such probes have been applied to a variety of magnetic materials starting with select historical examples before discussing multifunctional, low dimensional and frustrated magnets. This review highlights the information that can be obtained from such microscopic studies, including the strengths and limitations of these techniques. The article then concludes with a brief perspective on the future of this area.

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

Recent progress in deep learning extends the capability of artificial intelligence to various practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis. While such DNN is virtually built on contemporary data centers of the von Neumann architecture, physical (in part) DNN of non-von Neumann architecture, also known as neuromorphic computing, can remarkably improve learning and inference efficiency. Particularly, resistance-based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply-accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance-based NVRAMs and their technological maturity from the material- and device-points of view. Examples within the strategy are subsequently addressed in comparison with their benchmarks (virtual DNN in deep learning). A spiking neural network (SNN) is another type of neural network that is more biologically plausible than the DNN. The successful incorporation of resistance-based NVRAM in SNN-based neuromorphic computing offers an efficient solution to the MAC operation and spike timing-based learning in nature. This strategy is exemplified from a material perspective. Intelligent machines are categorized according to their architecture and learning type. Also, the functionality and usefulness of NVRAM-based neuromorphic computing are addressed.

Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier

The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing-channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La_0.6Sr_0.4MnO₃/P(VDF-TrFE) ( t)/Co/Au structures with different P(VDF-TrFE) thickness ( t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDF-TrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface".

All-Organic Dual Spin Valves with Well-Resolved Four Resistive-States

The formation of all-organic dual spin valves (DSVs) with three organic spin-selective layers, that is, spin-injection, spin-detection, and an additional spin-filtering layer at the intermediate, is reported. As spin-selective layers, manganese- and cobalt phthalocyanines, which are well-known single-molecule magnets, are used in their immobilized forms, so that all-organic DSVs can be prefabricated for characterization. The three spin-selective layers have provided four configurations with at most two spin-flip interfaces enforcing spin-flipping at the two nonmagnetic organic spacer layers, for which copper phthalocyanine is used. Since a couple of the four configurations have exhibited similar resistivities, the degeneracy in the resistive-states is broken through asymmetric spin-injection and spin-detection layers and also through asymmetric thickness of the nonmagnetic spacer layers. When both the spin-flip interfaces are made operative independently, a 2-bit logic with four distinct resistive states can be achieved.

Design of a Vertical Composite Thin Film System with Ultralow Leakage To Yield Large Converse Magnetoelectric Effect

Electric field control of magnetism is a critical future technology for low-power, ultrahigh density memory. However, despite intensive research efforts, no practical material systems have emerged. Interface-coupled, composite systems containing ferroelectric and ferri-/ferromagnetic elements have been widely explored, but they have a range of problems, for example, substrate clamping, large leakage, and inability to miniaturize. In this work, through careful material selection, design, and nanoengineering, a high-performance room-temperature magnetoelectric system is demonstrated. The clamping problem is overcome by using a vertically aligned nanocomposite structure in which the strain coupling is independent of the substrate. To overcome the leakage problem, three key novel advances are introduced: a low leakage ferroelectric, Na_0.5Bi_0.5TiO₃; ferroelectric-ferrimagnetic vertical interfaces which are not conducting; and current blockage via a rectifying interface between the film and the Nb-doped SrTiO₃ substrate. The new multiferroic nanocomposite (Na_0.5Bi_0.5TiO₃-CoFe₂O₄) thin-film system enables, for the first time, large-scale in situ electric field control of magnetic anisotropy at room temperature in a system applicable for magnetoelectric random access memory, with a magnetoelectric coefficient of 1.25 × 10^-9 s m^-1.

Probing Ferroic States in Oxide Thin Films Using Optical Second Harmonic Generation

Forthcoming low-energy consumption oxide electronics rely on the deterministic control of ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the recent progress in the field of investigation of ferroic order in thin films and heterostructures, with a focus on non-invasive optical second harmonic generation (SHG). For more than 50 years, SHG has served as an established technique for probing ferroic order in bulk materials. Here, we will survey the specific new aspects introduced to SHG investigation of ferroelectrics and multiferroics by working with thin film structures. We show how SHG can probe complex ferroic domain patterns non-invasively and even if the lateral domain size is below the optical resolution limit or buried beneath an otherwise impenetrable cap layer. We emphasize the potential of SHG to distinguish contributions from individual (multi-) ferroic films or interfaces buried in a device or multilayer architecture. Special attention is given to monitoring switching events in buried ferroic domain- and domain-wall distributions by SHG, thus opening new avenues towards the determination of the domain dynamics. Another aspect studied by SHG is the role of strain. We will finally show that by integrating SHG into the ongoing thin film deposition process, we can monitor the emergence of ferroic order and properties in situ, while they emerge during growth. Our review closes with an outlook, emphasizing the present underrepresentation of ferroic switching dynamics in the study of ferroic oxide heterostructures.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.

High-temperature reversible phase transitions and exceptional dielectric anomalies in cobalt(ii) based ionic crystals: [Me3NCH2X]2[CoX4] (X = Cl and Br)

Two isostructural cobalt(ii) based ionic crystals with exceptional dielectric anomalies have been designed as new high-temperature phase transition materials.

Spin-transfer torque in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers

Using model calculations, we demonstrate a very high level of control of the spin-transfer torque (STT) by electric field in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers. We find that, for particular device parameters, toggling the polarization direction can switch the voltage-induced part of STT between a finite value and a value close to zero, i.e. quench and release the torque. Additionally, we demonstrate that under certain conditions the zero-voltage STT, i.e. the interlayer exchange coupling, can switch sign with polarization reversal, which is equivalent to reversing the magnetic ground state of the tunnel junction. This bias- and polarization-tunability of the STT could be exploited to engineer novel functionalities such as softening/hardening of the bit or increasing the signal-to-noise ratio in magnetic sensors, which can have important implications for magnetic random access memories or for combined memory and logic devices.

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO₃ films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.

Heat-Assisted Multiferroic Solid-State Memory

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO₃ antiferroelectric layer and Ni₈₁Fe₁₉ magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel junction element. The bit writing process is contactless and relies on triggering thermally activated magnetisation switching of the free layer towards a strain-induced anisotropy easy axis. A stress is generated using the antiferroelectric layer by voltage-induced antiferroelectric to ferroelectric phase change, and this is transmitted to the magnetic free layer by strain-mediated coupling. The thermally activated strain-induced magnetisation switching is analysed here using a three-dimensional, temperature-dependent magnetisation dynamics model, based on simultaneous evaluation of the stochastic Landau-Lifshitz-Bloch equation and heat flow equation, together with stochastic thermal fields and magnetoelastic contributions. The magnetisation switching probability is calculated as a function of stress magnitude and maximum heat pulse temperature. An operating region is identified, where magnetisation switching always occurs, with stress values ranging from 80 to 180 MPa, and maximum temperatures normalised to the Curie temperature ranging from 0.65 to 0.99.

Diverse polarization bi-stability in ferroelectric tunnel junctions due to the effects of the electrode and strain: an ab initio study

Both electrodes and substrates are factors of great significance for the performance of ferroelectric tunnel junctions (FTJs) in designing functional nanodevices. To provide a comprehensive view on the polarization stability in FTJs due to the effects of an electrode and a substrate misfit strain, in this work we calculated more than 1000 FTJ structures by utilizing an ab initio density functional theory (DFT) method, via changing the symmetry of the FTJ structure (i.e., both asymmetric and symmetric FTJs), electrodes (including Au, Ag, Cu, Pt, Co, Fe, and SrRuO₃), barrier thickness (ranging from 2 to 10 unit cells), polarization direction (both positive and negative polarizations) and epitaxial strain (i.e., -3%, -2.5%, -2%, -1.5% and -1%) as variables. This shows that the FTJs can exhibit quite diverse polarization bi-stability due to the combined effect of the electrode and strain control, which indicates diverse performance of the FTJs modulated by the electrode and strain. In particular, the polarization-mediated electrostatic potential in the barriers with different electrodes forecasts an electrode-tailored tunnel electroresistance effect. Our study provides guidance on the practical applications of FTJs with regard to the selection of electrodes and substrates.

Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers

Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO₃/PbTiO₃ (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO₃ (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO₃ was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.

Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retention and difficulty of exactly controlling the middle polarization states. In order to overcome the issues, we develop a ferroelectric tunnel junction with smooth ultrathin polycrystalline BiFeO₃ (BFO) film. Through controlling the polarization state and oxygen vacancy migration using voltage pulses, we demonstrate that voltage-controlled barrier yields a memristive behavior in the device, in which the resistance variations exceed over two orders of magnitude. And we achieve multi logic states written and read easily using voltage pulses in the device. Especially the device is integrated with the silicon technology in modern microelectronics. Our results suggest new opportunity for ferroelectrics as high storage density nonvolatile memories.

Resonant electron tunnelling assisted by charged domain walls in multiferroic tunnel junctions

The peculiar features of domain walls observed in ferroelectrics make them promising active elements for next-generation non-volatile memories, logic gates and energy-harvesting devices. Although extensive research activity has been devoted recently to making full use of this technological potential, concrete realizations of working nanodevices exploiting these functional properties are yet to be demonstrated. Here, we fabricate a multiferroic tunnel junction based on ferromagnetic La_0.7Sr_0.3MnO₃ electrodes separated by an ultrathin ferroelectric BaTiO₃ tunnel barrier, where a head-to-head domain wall is constrained. An electron gas stabilized by oxygen vacancies is confined within the domain wall, displaying discrete quantum-well energy levels. These states assist resonant electron tunnelling processes across the barrier, leading to strong quantum oscillations of the electrical conductance.

Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here we report a systematic investigation on electroresistance of Pt/BaTiO3/Nb:SrTiO3 metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier on Nb:SrTiO3 surface via varying BaTiO3 thickness and Nb doping concentration. The optimum ON/OFF ratio as great as 6.0 × 106, comparable to that of commercial Flash memories, is achieved in a device with 0.1 wt% Nb concentration and a 4-unit-cell-thick BaTiO3 barrier. With this thinnest BaTiO3 barrier, which shows a negligible resistance to the tunnelling current but is still ferroelectric, the device is reduced to a polarization-modulated metal/semiconductor Schottky junction that exhibits a more efficient control on the tunnelling resistance to produce the giant electroresistance observed. These results may facilitate the design of high performance non-volatile resistive memories.

Multiferroic properties of the PbTiO3/La2/3Sr1/3MnO3 interface studied from first principles

Magnetoelectric coupling and spin polarization at the multiferroic PbTiO₃/La_2/3Sr_1/3MnO₃ (PTO/LSMO) interface is studied from first principles in view of the recent experimental observation of the tunneling magnetoresistance sign inversion in Co/PZT/LSMO tunnel junctions (Pantel et al 2012 Nat. Mater. 11 289). Our results confirm the stabilization of the locally antiferromagnetic order in the manganite when the PTO polarization points away from the LSMO side, which changes the interface magnetization by 6.3-6.9 [Formula: see text] per surface unit cell in agreement with previous studies. We contribute by analyzing the charge transfer from the half-metallic LSMO side which induces metallicity and local magnetic moments in the interface PTO layers. This results in either p- or n-doped conductive behavior, depending on the polarization direction. Electronic correlations were determined to qualitatively change the picture for certain configurations, as far as the magnetic phase transition in the manganite and the spin character of the interface states are concerned. Most importantly, depending on the interface termination, the spin polarization of the PTO/LSMO interface is positive for one polarization state of PTO and acquires a 'spin-valve' character upon the ferroelectric switching.

Multiferroic Nanopatterned Hybrid Material with Room-Temperature Magnetic Switching of the Electric Polarization

A nanopatterned hybrid layer is designed, wherein the electric polarization can be flipped at room temperature by a magnetic field aided by an electrical field. This is achieved by embedding ferromagnetic nanopillars in a continuous organic ferroelectric layer, and amplifying the magnetostriction-generated stress gradients by scaling down the supracrystalline cell of the material.

Ferroelectric Control of Organic/Ferromagnetic Spinterface

Organic multiferroic tunnel junctions based on La_0.6 Sr_0.4 MnO₃ /poly(vinylidene fluoride) (PVDF)/Co structures are fabricated. The tunneling magneto-resistance sign can be changed by electrically switching the ferroelectric polarization of PVDF barrier. It is demonstrated that the spin-polarization of the PVDF/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF. This study opens new functionality in controlling the injection of spin polarization into organic materials via the ferroelectric polarization of the barrier.

Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

Nanoscale Origins of Ferroelastic Domain Wall Mobility in Ferroelectric Multilayers

The nanoscale origins of ferroelastic domain wall motion in ferroelectric multilayer thin films that lead to giant electromechanical responses are investigated. We present direct evidence for complex underpinning factors that result in ferroelastic domain wall mobility using a combination of atomic-level aberration corrected scanning transmission electron microscopy and phase-field simulations in model epitaxial (001) tetragonal (T) PbZr_xTi_1-xO₃ (PZT)/rhombohedral (R) PbZr_xTi_1-xO₃ (PZT) bilayer heterostructures. The local electric dipole distribution is imaged on an atomic scale for a ferroelastic domain wall that nucleates in the R-layer and cuts through the composition breaking the T/R interface. Our studies reveal a highly complex polarization rotation domain structure that is nearly on the knife-edge at the vicinity of this wall. Induced phases, namely tetragonal-like and rhombohedral-like monoclinic were observed close to the interface, and exotic domain arrangements, such as a half-4-fold closure structure, are observed. Phase field simulations show this is due to the minimization of the excessive elastic and electrostatic energies driven by the enormous strain gradient present at the location of the ferroelastic domain walls. Thus, in response to an applied stimulus, such as an electric field, any polarization reorientation must minimize the elastic and electrostatic discontinuities due to this strain gradient, which would induce a dramatic rearrangement of the domain structure. This insight into the origins of ferroelastic domain wall motion will allow researchers to better "craft" such multilayered ferroelectric systems with precisely tailored domain wall functionality and enhanced sensitivity, which can be exploited for the next generation of integrated piezoelectric technologies.

Long Spin Diffusion Length in Few-Layer Graphene Flakes

We report a spin valve with a few-layer graphene flake bridging highly spin-polarized La_{0.67}Sr_{0.33}MnO_{3} electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. A naturally occurring high interfacial resistance ∼12  MΩ facilitates spin injection, and a large resistive switching (0.8  MΩ at 10 K) implies a 70-130  μm spin diffusion length that exceeds previous values obtained with sharp-switching electrodes.

Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode device in which the storage layer combines a nanostructured ZnO-Co layer and a ZnO layer. The device exhibits bipolar resistive switching characteristics, which can be explained by the accumulation of oxygen vacancies due to the migration of oxygen ions by external electrical stimuli and the contribution of Co particles in the ZnO-Co layer. Moreover, the magnetoresistance effect at room temperature can be observed in the device at high and low resistance states. Therefore, through electrical and magnetic control, four resistance states are achieved in this system, presenting a new possibility towards enhancing data densities by many folds.

Superadiabatic quantum heat engine with a multiferroic working medium

A quantum thermodynamic cycle with a chiral multiferroic working substance such as LiCu_{2}O_{2} is presented. Shortcuts to adiabaticity are employed to achieve an efficient, finite-time quantum thermodynamic cycle, which is found to depend on the spin ordering. The emergent electric polarization associated with the chiral spin order, i.e., the magnetoelectric coupling, renders possible steering of the spin order by an external electric field and hence renders possible an electric-field control of the cycle. Due to the intrinsic coupling between the spin and the electric polarization, the cycle performs an electromagnetic work. We determine this work's mean-square fluctuations, the irreversible work, and the output power of the cycle. We observe that the work mean-square fluctuations are increased with the duration of the adiabatic strokes, while the irreversible work and the output power of the cycle show a nonmonotonic behavior. In particular, the irreversible work vanishes at the end of the quantum adiabatic strokes. This fact confirms that the cycle is reversible. Our theoretical findings evidence the existence of a system inherent maximal output power. By implementing a Lindblad master equation we quantify the role of thermal relaxations on the cycle efficiency. We also discuss the role of entanglement encoded in the noncollinear spin order as a resource to affect the quantum thermodynamic cycle.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics

Direct, nonvolatile, and reversible control of nanomagnetism in solid-state ferromagnetic thin films is achieved by controlling the chemical composition of the film through field-driven ion redistribution. The electric field-driven de-intercalation/intercalation of lithium ions can result in ≈100% modulation of the magnetization and drives domain wall motion over ≈100 nm. High-speed and multilevel magnetic information storage is further demonstrated.

Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions

A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.

Tunnel electroresistance through organic ferroelectrics

Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

Ferroelectric organic materials can be used for tunnel barriers in memory devices as a cheaper and eco-friendly replacement of their inorganic counterparts. Here, Tian et al. use poly(vinylidene fluoride) with 1–2 layer thickness to achieve giant tunnel electroresistance of 1,000% at room temperature.

Versatile variable temperature insert at the DEIMOS beamline for in situ electrical transport measurements

The design and the first experiments are described of a versatile cryogenic insert used for its electrical transport capabilities. The insert is designed for the cryomagnet installed on the DEIMOS beamline at the SOLEIL synchrotron dedicated to magnetic characterizations through X-ray absorption spectroscopy (XAS) measurements. This development was spurred by the multifunctional properties of novel materials such as multiferroics, in which, for example, the magnetic and electrical orders are intertwined and may be probed using XAS. The insert thus enables XAS to in situ probe this interplay. The implementation of redundant wiring and careful shielding also enables studies on operating electronic devices. Measurements on magnetic tunnel junctions illustrate the potential of the equipment toward XAS studies of in operando electronic devices.

Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn-Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.

Dynamic in situ observation of voltage-driven repeatable magnetization reversal at room temperature

Purely voltage-driven, repeatable magnetization reversal provides a tantalizing potential for the development of spintronic devices with a minimum amount of power consumption. Substantial progress has been made in this subject especially on magnetic/ferroelectric heterostructures. Here, we report the in situ observation of such phenomenon in a NiFe thin film grown directly on a rhombohedral Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) ferroelectric crystal. Under a cyclic voltage applied perpendicular to the PMN-PT without a magnetic field, the local magnetization of NiFe can be repetitively reversed through an out-of-plane excursion and then back into the plane. Using phase field simulations we interpret magnetization reversal as a synergistic effect of the metastable ferroelastic switching in the PMN-PT and an electrically rotatable local exchange bias field arising from the heterogeneously distributed NiO clusters at the interface.

Interface Magnetoelectric Coupling in Co/Pb(Zr,Ti)O3

Magnetoelectric coupling at multiferroic interfaces is a promising route toward the nonvolatile electric-field control of magnetization. Here, we use optical measurements to study the static and dynamic variations of the interface magnetization induced by an electric field in Co/PbZr0.2Ti0.8O3 (Co/PZT) bilayers at room temperature. The measurements allow us to identify different coupling mechanisms. We further investigate the local electronic and magnetic structure of the interface by means of transmission electron microscopy, soft X-ray magnetic circular dichroism, and density functional theory to corroborate the coupling mechanism. The measurements demonstrate a mixed linear and quadratic optical response to the electric field, which results from a magneto-electro-optical effect. We propose a decomposition method of the optical signal to discriminate between different components involved in the electric field-induced polarization rotation of the reflected light. This allows us to extract a signal that we can ascribe to interface magnetoelectric coupling. The associated surface magnetization exhibits a clear hysteretic variation of odd symmetry with respect to the electric field and nonzero remanence. The interface coupling is remarkably stable over a wide frequency range (1-50 kHz), and the application of a bias magnetic field is not necessary for the coupling to occur. These results show the potential of exploiting interface coupling with the prospect of optimizing the performance of magnetoelectric memory devices in terms of stability, as well as fast and dissipationless operation.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Active Polymer Microfiber with Controlled Polarization Sensitivity

Controlled Polarization Sensitivity of an active polymer microfiber has been proposed and realized with the electrospun method. The fluorescence intensity guiding through this active polymer microfiber shows high sensitivity to the polarization state of the excitation light. What is more, the fluorescence out-coupled from tip of the microfiber can be of designed polarization state. Principle of these phenomena lies on the ordered and controlled orientation of the polydiacetylene (PDA) main chains inside polymer microfiber.

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm_0.1Bi_0.9FeO₃ layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO₃ single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10⁵. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

Tunnelling electroresistance is the variation of resistance of a thin-film junction with the polarization state of its ferroelectric tunnel barrier. Here the authors demonstrate a large light-modulated tunnelling electroresistance and a hysteretic photovoltaic effect in a complex oxide heterostructure.

Curvature-enhanced Spin-orbit Coupling and Spinterface Effect in Fullerene-based Spin Valves

We investigated curvature-enhanced spin-orbit coupling (SOC) and spinterface effect in carbon-based organic spin valves (OSVs) using buckyball C60 and C70 molecules. Since the naturally abundant (12)C has spinless nuclear, the materials have negligible hyperfine interaction (HFI) and the same intrinsic SOC, but different curvature SOC due to their distinct curvatures. We fitted the thickness dependence of magnetoresistance (MR) in OSVs at various temperatures using the modified Jullière equation. We found that the spin diffusion length in the C70 film is above 120 nm, clearly longer than that in C60 film at all temperatures. The effective SOC ratio of the C70 film to the C60 film was estimated to be about 0.8. This was confirmed by the magneto-electroluminescence (MEL) measurement in fullerene-based light emitting diodes (LED). Next, the effective spin polarization in C70-based OSVs is smaller than that in C60-based OSVs implying that they have different spinterface effect. First principle calculation study shows that the spin polarization of the dz(2) orbital electrons of Co atoms contacted with C60 is larger causing better effective spin polarization at the interface.

Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

Electric field control of magnetic properties and electron transport in BaTiO₃-based multiferroic heterostructures

In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO3/La0.7Sr0.3MnO3 heterostructure, where Co/Fe and La0.7Sr0.3MnO3 are the magnetic electrodes and BaTiO3 acts both as a ferroelectric element and tunneling barrier. We show that, at 20 K, devices with a 2 nm thick BaTiO3 barrier present both tunneling electroresistance (TER = 12   ±   0.1%) and tunneling magnetoresistance (TMR). The latter depends on the direction of the BaTiO3 polarization, displaying a sizable change of the TMR from  -0.32   ±   0.05% for the polarization pointing towards Fe, to  -0.12   ±   0.05% for the opposite direction. This is consistent with the on-off switching of the Fe magnetization at the Fe/BaTiO3 interface, driven by the BaTiO3 polarization, we have previously demonstrated in x-ray magnetic circular dichroism experiments.

Polarization-Mediated Thermal Stability of Metal/Oxide Heterointerface

A polarization-mediated heterointerface is designed to research the thermal stability of magnetic metal/oxide interfaces. Using polarization engineering, the thermal stability of the interface between BiFeO3 and CoFeB can be improved by about 100°C. This finding provides new insight into the chemistry of the metal/oxide heterointerface.

The Ehrlich-Schwoebel barrier on an oxide surface: a combined Monte-Carlo and in situ scanning tunneling microscopy approach

The controlled growth of epitaxial films of complex oxides requires an atomistic understanding of key parameters determining final film morphology, such as termination dependence on adatom diffusion, and height of the Ehrlich-Schwoebel (ES) barrier. Here, through an in situ scanning tunneling microscopy study of mixed-terminated La5/8Ca3/8MnO3 (LCMO) films, we image adatoms and observe pile-up at island edges. Image analysis allows determination of the population of adatoms at the edge of islands and fractions on A-site and B-site terminations. A simple Monte-Carlo model, simulating the random walk of adatoms on a sinusoidal potential landscape using Boltzmann statistics is used to reproduce the experimental data, and provides an estimate of the ES barrier as ∼0.18 ± 0.04 eV at T = 1023 K, similar to those of metal adatoms on metallic surfaces. These studies highlight the utility of in situ imaging, in combination with basic Monte-Carlo methods, in elucidating the factors which control the final film growth in complex oxides.

Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit

We have imaged optically the spatial distributions of ferroelectricity and piezoelectricity at the diffraction limit. Contributions to the birefringence from electro-optics –linked to ferroelectricity– as well as strain –arising from converse piezoelectric effects– have been recorded simultaneously in a BaTiO₃ thin film. The concurrent recording of electro-optic and piezo-optic mappings revealed that, far from the ideal uniformity, the ferroelectric and piezoelectric responses were strikingly inhomogeneous, exhibiting significant fluctuations over the scale of the micrometer. The optical methods here described are appropriate to study the variations of these properties simultaneously, which are of great relevance when ferroelectrics are downscaled to small sizes for applications in data storage and processing.

Magnetoelectric Coupling Induced by Interfacial Orbital Reconstruction

Reversible orbital reconstruction driven by ferroelectric polarization modulates the magnetic performance of model ferroelectric/ferromagnetic heterostructures without onerous limitations. Mn-d(x2-y2) orbital occupancy and related interfacial exotic magnetic states are enhanced and weakened by negative and positive electric fields, respectively, filling the missing member-orbital in the mechanism of magnetoelectric coupling and advancing the application of orbitals to microelectronics.