Plasmon-induced hot carrier science and technology

Nano Sensing and Energy Conversion Using Surface Plasmon Resonance (SPR)

Nanophotonic technique has been attracting much attention in applications of nano-bio-chemical sensing and energy conversion of solar energy harvesting and enhanced energy transfer. One approach for nano-bio-chemical sensing is surface plasmon resonance (SPR) imaging, which can detect the material properties, such as density, ion concentration, temperature, and effective refractive index in high sensitivity, label-free, and real-time under ambient conditions. Recent study shows that SPR can successfully detect the concentration variation of nanofluids during evaporation-induced self-assembly process. Spoof surface plasmon resonance based on multilayer metallo-dielectric hyperbolic metamaterials demonstrate SPR dispersion control, which can be combined with SPR imaging, to characterize high refractive index materials because of its exotic optical properties. Furthermore, nano-biophotonics could enable innovative energy conversion such as the increase of absorption and emission efficiency and the perfect absorption. Localized SPR using metal nanoparticles show highly enhanced absorption in solar energy harvesting. Three-dimensional hyperbolic metamaterial cavity nanostructure shows enhanced spontaneous emission. Recently ultrathin film perfect absorber is demonstrated with the film thickness is as low as ~1/50th of the operating wavelength using epsilon-near-zero (ENZ) phenomena at the wavelength close to SPR. It is expected to provide a breakthrough in sensing and energy conversion applications using the exotic optical properties based on the nanophotonic technique.

Distinguishing between plasmon-induced and photoexcited carriers in a device geometry

The use of surface plasmons, charge density oscillations of conduction electrons of metallic nanostructures, to boost the efficiency of light-harvesting devices through increased light-matter interactions could drastically alter how sunlight is converted into electricity or fuels. These excitations can decay directly into energetic electron–hole pairs, useful for photocurrent generation or photocatalysis. However, the mechanisms behind plasmonic carrier generation remain poorly understood. Here we use nanowire-based hot-carrier devices on a wide-bandgap semiconductor to show that plasmonic carrier generation is proportional to internal field-intensity enhancement and occurs independently of bulk absorption. We also show that plasmon-induced hot electrons have higher energies than carriers generated by direct excitation and that reducing the barrier height allows for the collection of carriers from plasmons and direct photoexcitation. Our results provide a route to increasing the efficiency of plasmonic hot-carrier devices, which could lead to more efficient devices for converting sunlight into usable energy.

Plasmonic excitations of electrons in metallic nanostructures are promising for the enhanced conversion of light in semiconductor solar cells. Here, the authors are able to experimentally distinguish the absorption phenomena of plasmonic carrier generation and excitation of carriers by light absorption.

Schottky barrier formation and band bending revealed by first- principles calculations

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped rutile titania in contact with gold (Au/Nb:TiO2). The local Schottky barrier height is found to vary between 0 and 1.26 eV depending on the position of the dopant. The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO2 interface does not show any band bending. These findings open the possibility for atomic scale optimisation of the Schottky barrier and light harvesting in metal-semiconductor nanostructures.

Plasmon Enhanced Internal Photoemission in Antenna-Spacer-Mirror Based Au/TiO₂ Nanostructures

Emission of photoexcited hot electrons from plasmonic metal nanostructures to semiconductors is key to a number of proposed nanophotonics technologies for solar harvesting, water splitting, photocatalysis, and a variety of optical sensing and photodetector applications. Favorable materials and catalytic properties make systems based on gold and TiO2 particularly interesting, but the internal photoemission efficiency for visible light is low because of the wide bandgap of the semiconductor. We investigated the incident photon-to-electron conversion efficiency of thin TiO2 films decorated with Au nanodisk antennas in an electrochemical circuit and found that incorporation of a Au mirror beneath the semiconductor amplified the photoresponse for light with wavelength λ = 500-950 nm by a factor 2-10 compared to identical structures lacking the mirror component. Classical electrodynamics simulations showed that the enhancement effect is caused by a favorable interplay between localized surface plasmon excitations and cavity modes that together amplify the light absorption in the Au/TiO2 interface. The experimentally determined internal quantum efficiency for hot electron transfer decreases monotonically with wavelength, similar to the probability for interband excitations with energy higher than the Schottky barrier obtained from a density functional theory band structure simulation of a thin Au/TiO2 slab.

Theory and computation of hot carriers generated by surface plasmon polaritons in noble metals

Hot carriers (HC) generated by surface plasmon polaritons (SPPs) in noble metals are promising for application in optoelectronics, plasmonics and renewable energy. However, existing models fail to explain key quantitative details of SPP-to-HC conversion experiments. Here we develop a quantum mechanical framework and apply first-principles calculations to study the energy distribution and scattering processes of HCs generated by SPPs in Au and Ag. We find that the relative positions of the s and d bands of noble metals regulate the energy distribution and mean free path of the HCs, and that the electron-phonon interaction controls HC energy loss and transport. Our results prescribe optimal conditions for HC generation and extraction, and invalidate previously employed free-electron-like models. Our work combines density functional theory, GW and electron-phonon calculations to provide microscopic insight into HC generation and ultrafast dynamics in noble metals.

Metal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics

Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device design due to the finite choice of materials. In this work we theoretically consider the metal-insulator-semiconductor heterojunction as a candidate for plasmonic hot-carrier photodetection and solar cells. The presence of the insulating layer can significantly reduce the dark current, resulting in increased device performance with predicted solar power conversion efficiencies up to 9%. For photodetection, the sensitivity can be extended well into the infrared by a judicious choice of the insulating layer, with up to 300-fold expected enhancement in detectivity.

Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions

We investigate the wavelength- and polarization-dependence of photocurrent signals generated at few-layer MoS2-metal junctions through spatially resolved photocurrent measurements. When incident photon energy is above the direct bandgap of few-layer MoS2, the maximum photocurrent response occurs for the light polarization direction parallel to the metal electrode edge, which can be attributed to photovoltaic effects. In contrast, if incident photon energy is below the direct bandgap of MoS2, the photocurrent response is maximized when the incident light is polarized in the direction perpendicular to the electrode edge, indicating different photocurrent generation mechanisms. Further studies show that this polarized photocurrent response can be interpreted in terms of the polarized absorption of light by the plasmonic metal electrode, its conversion into hot electron-hole pairs, and subsequent injection into MoS2. These fundamental studies shed light on the knowledge of photocurrent generation mechanisms in metal-semiconductor junctions, opening the door for engineering future two-dimensional materials based optoelectronics through surface plasmon resonances.

Superior plasmon absorption in iron-doped gold nanoparticles

Although the excitation of localized surface plasmons is associated with enhanced scattering and absorption of incoming photons, only the latter is relevant for the efficient conversion of light into heat. Here we show that the absorption cross section of gold nanoparticles is sensibly increased when iron is included in the lattice as a substitutional dopant, i.e. in a gold-iron nanoalloy. Such an increase is size and shape dependent, with the best performance observed in nanoshells where a 90-190% improvement is found in a size range that is crucial for practical applications. Our findings are unexpected according to the common belief and previous experimental observations that alloys of Au with transition metals show a depressed plasmonic response. These results are promising for the design of efficient plasmonic converters of light into heat and pave the way to more in-depth investigations of the plasmonic properties in noble metal nanoalloys.

Spatially Mapping Energy Transfer from Single Plasmonic Particles to Semiconductor Substrates via STEM/EELS

Energy transfer from plasmonic nanoparticles to semiconductors can expand the available spectrum of solar energy-harvesting devices. Here, we spatially and spectrally resolve the interaction between single Ag nanocubes with insulating and semiconducting substrates using electron energy-loss spectroscopy, electrodynamics simulations, and extended plasmon hybridization theory. Our results illustrate a new way to characterize plasmon-semiconductor energy transfer at the nanoscale and bear impact upon the design of next-generation solar energy-harvesting devices.

Plasmon-induced optical anisotropy in hybrid graphene-metal nanoparticle systems

Hybrid plasmonic metal-graphene systems are emerging as a class of optical metamaterials that facilitate strong light-matter interactions and are of potential importance for hot carrier graphene-based light harvesting and active plasmonic applications. Here we use femtosecond pump-probe measurements to study the near-field interaction between graphene and plasmonic gold nanodisk resonators. By selectively probing the plasmon-induced hot carrier dynamics in samples with tailored graphene-gold interfaces, we show that plasmon-induced hot carrier generation in the graphene is dominated by direct photoexcitation with minimal contribution from charge transfer from the gold. The strong near-field interaction manifests as an unexpected and long-lived extrinsic optical anisotropy. The observations are explained by the action of highly localized plasmon-induced hot carriers in the graphene on the subresonant polarizability of the disk resonator. Because localized hot carrier generation in graphene can be exploited to drive electrical currents, plasmonic metal-graphene nanostructures present opportunities for novel hot carrier device concepts.

Nanoscale plasmonic stamp lithography on silicon

Nanoscale lithography on silicon is of interest for applications ranging from computer chip design to tissue interfacing. Block copolymer-based self-assembly, also called directed self-assembly (DSA) within the semiconductor industry, can produce a variety of complex nanopatterns on silicon, but these polymeric films typically require transformation into functional materials. Here we demonstrate how gold nanopatterns, produced via block copolymer self-assembly, can be incorporated into an optically transparent flexible PDMS stamp, termed a plasmonic stamp, and used to directly functionalize silicon surfaces on a sub-100 nm scale. We propose that the high intensity electric fields that result from the localized surface plasmons of the gold nanoparticles in the plasmonic stamps upon illumination with low intensity green light, lead to generation of electron-hole pairs in the silicon that drive spatially localized hydrosilylation. This approach demonstrates how localized surface plasmons can be used to enable functionalization of technologically relevant surfaces with nanoscale control.

Introductory lecture: nanoplasmonics

Nanoplasmonics or nanoscale metal-based optics is a field of science and technology with a tremendously rich and colourful history. Starting with the early works of Michael Faraday on gold nanocolloids and optically-thin gold leaf, researchers have been fascinated by the unusual optical properties displayed by metallic nanostructures. We now can enjoy selecting from over 10 000 publications every year on the topic of plasmonics and the number of publications has been doubling about every three years since 1990. This impressive productivity can be attributed to the significant growth of the scientific community as plasmonics has spread into a myriad of new directions. With 2015 being the International Year of Light, it seems like a perfect moment to review some of the most notable accomplishments in plasmonics to date and to project where the field may be moving next. After discussing some of the major historical developments in the field, this article will analyse how the most successful plasmonics applications are capitalizing on five key strengths of metallic nanostructures. This Introductory Lecture will conclude with a brief look into the future.

Theoretical maximum efficiency of solar energy conversion in plasmonic metal–semiconductor heterojunctions

The plasmon's dephasing is used to calculate optimal design guidelines and the maximum efficiency for plasmon enhanced solar energy conversion.