101
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Gao Y, Pei Y, Xiang T, Cheng L, Qi J. Terahertz wave emission from the trigonal layered PtBi 2. iScience 2022; 25:104511. [PMID: 35720263 PMCID: PMC9204749 DOI: 10.1016/j.isci.2022.104511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 05/02/2022] [Accepted: 05/27/2022] [Indexed: 11/16/2022] Open
Abstract
In this work, broadband terahertz (THz) wave emissions have been detected from the trigonal layered PtBi2 on the excitation of the femtosecond laser pulses. Such THz generation is found to arise from the dominated linear photogalvanic effect, which is further discovered to strongly depend on the unique electronic structures of PtBi2. Furthermore, an effective nonlinear susceptibility of PtBi2 is also obtained and is nearly two orders of magnitude larger than that of the traditional nonlinear crystal for THz generation. Terahertz (THz) wave emission, topological semimetal, ultrafast photocurrent
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Affiliation(s)
- Yu Gao
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yunhe Pei
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Tian Xiang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Liang Cheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jingbo Qi
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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102
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Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures. Nat Commun 2022; 13:3152. [PMID: 35672292 PMCID: PMC9174237 DOI: 10.1038/s41467-022-30744-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 05/16/2022] [Indexed: 11/16/2022] Open
Abstract
Experimental control of local spin-charge interconversion is of primary interest for spintronics. Van der Waals (vdW) heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have thus far provided global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we probe the gate-tunable local spin polarisation in current-driven graphene/WTe2 heterostructures through magneto-optical Kerr microscopy. Even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We present a theoretical model which fully explains the gate- and bias-dependent onset and spatial distribution of the intense Kerr signal as a result of a non-linear anomalous Hall effect in the heterostructure, which is enabled by its reduced point group symmetry. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important step toward nanoscale, electrical spin control. Spin-based electronics offers significantly improved efficiency, but a major challenge is the electric manipulation of spin. Here, Powalla et al find a large gate induced spinpolarization in graphene/WTe2 heterostructures, illustrating the potential of such heterostructures for spintronics.
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103
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Strasser A, Wang H, Qian X. Nonlinear Optical and Photocurrent Responses in Janus MoSSe Monolayer and MoS 2-MoSSe van der Waals Heterostructure. NANO LETTERS 2022; 22:4145-4152. [PMID: 35532538 DOI: 10.1021/acs.nanolett.2c00898] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides are promising materials platforms for a variety of optoelectronic device applications. Janus 2D materials are a rising class of 2D materials with low symmetry, which leads to the emergence of out-of-plane electric polarization and piezoelectricity. Using first-principles density functional theory, we show that monolayer and bilayer heterostructure Janus MoSSe moieties exhibit strong nonlinear optical responses that are vanishing in the non-Janus form. The absence of horizontal mirror plane symmetry enables a circular photocurrent as well as a large out-of-plane second harmonic generation (SHG) and shift photocurrent. Through a comparative study of the Janus heterostructure MoS2-MoSSe on five distinct stacking configurations, we find that the magnitude of the out-of-plane SHG in the Janus heterostructure is enhanced due to the interlayer coupling and interference effect compared to that of monolayer MoSSe. Thus, Janus 2D materials offer a unique opportunity for exploring nonlinear optical phenomena and designing configurable layered nonlinear optical materials.
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Affiliation(s)
- Alex Strasser
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Hua Wang
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
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104
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Rasche B, Brunner J, Schramm T, Ghimire MP, Nitzsche U, Büchner B, Giraud R, Richter M, Dufouleur J. Determination of Cleavage Energy and Efficient Nanostructuring of Layered Materials by Atomic Force Microscopy. NANO LETTERS 2022; 22:3550-3556. [PMID: 35427144 DOI: 10.1021/acs.nanolett.1c04868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A method is presented to use atomic force microscopy to measure the cleavage energy of van der Waals materials and similar quasi-two-dimensional materials. The cleavage energy of graphite is measured to be 0.36 J/m2, in good agreement with literature data. The same method yields a cleavage energy of 0.6 J/m2 for MoS2 as a representative of the dichalcogenides. In the case of the weak topological insulator Bi14Rh3I9 no cleavage energy is obtained, although cleavage is successful with an adapted approach. The cleavage energies of these materials are evaluated by means of density-functional calculations and literature data. This further validates the presented method and sets an upper limit of about 0.7 J/m2 to the cleavage energy that can be measured by the present setup. In addition, this method can be used as a tool for manipulating exfoliated flakes, prior to or after contacting, which may open a new route for the fabrication of nanostructures.
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Affiliation(s)
- Bertold Rasche
- Department of Chemistry, University of Cologne, 50939 Cologne, Germany
| | - Julius Brunner
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Tim Schramm
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Madhav Prasad Ghimire
- Central Department of Physics, Tribhuvan University, Kirtipur 44613, Kathmandu, Nepal
| | - Ulrike Nitzsche
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
| | - Bernd Büchner
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Department of Physics, TU Dresden, D-01062 Dresden, Germany
| | - Romain Giraud
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Université Grenoble Alpes, CNRS, CEA, Grenoble-INP, Spintec, F-38000 Grenoble, France
| | - Manuel Richter
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Dresden Center for Computational Materials Science (DCMS), TU Dresden, D-01062 Dresden, Germany
| | - Joseph Dufouleur
- Leibniz IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany
- Center for Transport and Devices, TU Dresden, D-01062 Dresden, Germany
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105
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Calavalle F, Suárez-Rodríguez M, Martín-García B, Johansson A, Vaz DC, Yang H, Maznichenko IV, Ostanin S, Mateo-Alonso A, Chuvilin A, Mertig I, Gobbi M, Casanova F, Hueso LE. Gate-tuneable and chirality-dependent charge-to-spin conversion in tellurium nanowires. NATURE MATERIALS 2022; 21:526-532. [PMID: 35256792 DOI: 10.1038/s41563-022-01211-7] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2021] [Accepted: 01/24/2022] [Indexed: 06/14/2023]
Abstract
Chiral materials are an ideal playground for exploring the relation between symmetry, relativistic effects and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as tellurium have excellent electrical conductivity, but their potential for enabling the electrical control of spin polarization in devices remains unclear. Here, we demonstrate the all-electrical generation, manipulation and detection of spin polarization in chiral single-crystalline tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.
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Affiliation(s)
| | | | | | - Annika Johansson
- Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, Germany
- Max Planck Institute of Microstructure Physics, Halle, Germany
| | - Diogo C Vaz
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Igor V Maznichenko
- Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Sergey Ostanin
- Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Aurelio Mateo-Alonso
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
- POLYMAT, University of the Basque Country UPV/EHU, Donostia-San Sebastian, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - Ingrid Mertig
- Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, Germany
| | - Marco Gobbi
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
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106
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Insights into the Interactions Between Root Phenotypic Traits and the Rhizosphere Bacterial Community. Curr Microbiol 2022; 79:176. [PMID: 35488936 DOI: 10.1007/s00284-022-02870-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2021] [Accepted: 04/08/2022] [Indexed: 11/03/2022]
Abstract
The root phenotypic traits have been considered as important factors in shaping the rhizosphere microbiome and regulating plant growth. However, the relationships between root phenotypic traits and the rhizosphere bacterial community remain unclear. We investigated two fields with different developing tobacco roots by a long-term positioning test in Hengshi. The well-developed root system (WDR) showed much more superiority in root phenotypic traits, including total root length, total projection area, surface area, and root tip number, than the underdeveloped root system. The specific root traits in WDR provided more ecological niches for the rhizosphere microorganisms, contributing to a more diverse microbial community and a more complex microbial network. The total root length and root tip number were the key factors shaping bacterial communities in the rhizosphere. In turn, the phyla Acidobacteria and Bacteroidetes might play vital roles in modifying root development and promoting plant growth according to their positive correlation with root phenotypic traits. Linking root phenotypic traits to the microbiome may enhance our understanding of rhizospheric interactions and their roles in developing rhizosphere ecosystems.
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107
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He P, Koon GKW, Isobe H, Tan JY, Hu J, Neto AHC, Fu L, Yang H. Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons. NATURE NANOTECHNOLOGY 2022; 17:378-383. [PMID: 35115723 DOI: 10.1038/s41565-021-01060-6] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 11/24/2021] [Indexed: 06/14/2023]
Abstract
Graphene-based samples have shown a plethora of exotic characteristics and these properties may help the realization of a new generation of fast electronic devices. However, graphene's centrosymmetry prohibits second-order electronic transport. Here, we show giant second-order nonlinear transports in graphene moiré superlattices at zero magnetic field, both longitudinal and transverse to the applied current direction. High carrier mobility and inversion symmetry breaking by hexagonal boron nitride lead to nonlinear conductivities five orders of magnitude larger than those in WTe2. The nonlinear conductivity strongly depends on the gate voltage as well as on the stacking configuration, with a giant enhancement originating from the moiré bands. Longitudinal nonlinear conductivity cannot originate from Berry curvature dipoles. Our theoretical modelling highlights skew scattering of chiral Bloch electrons as the physical origin. With these results, we demonstrate nonlinear charge transport due to valley-contrasting chirality, which constitutes an alternative means to induce second-order transports in van der Waals heterostructures. Our approach is promising for applications in frequency-doubling and energy harvesting via rectification.
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Affiliation(s)
- Pan He
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Shanghai, China.
| | - Gavin Kok Wai Koon
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Hiroki Isobe
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Jun You Tan
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Antonio H Castro Neto
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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108
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Wang P, Yang Y, Pan E, Liu F, Ajayan PM, Zhou J, Liu Z. Emerging Phases of Layered Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105215. [PMID: 34923740 DOI: 10.1002/smll.202105215] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 11/10/2021] [Indexed: 06/14/2023]
Abstract
Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.
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Affiliation(s)
- Ping Wang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yang Yang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Beijing Key Lab of Nanophotonics, and Ultrafine Optoelectronic Systems, and School of Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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109
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Giant second harmonic transport under time-reversal symmetry in a trigonal superconductor. Nat Commun 2022; 13:1659. [PMID: 35351870 PMCID: PMC8964720 DOI: 10.1038/s41467-022-29314-4] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 03/02/2022] [Indexed: 11/12/2022] Open
Abstract
Nonreciprocal or even-order nonlinear responses in symmetry-broken systems are powerful probes of emergent properties in quantum materials, including superconductors, magnets, and topological materials. Recently, vortex matter has been recognized as a key ingredient of giant nonlinear responses in superconductors with broken inversion symmetry. However, nonlinear effects have been probed as excess voltage only under broken time-reversal symmetry. In this study, we report second harmonic transport under time-reversal symmetry in the noncentrosymmetric trigonal superconductor PbTaSe2. The magnitude of anomalous nonlinear transport is two orders of magnitude larger than those in the normal state, and the directional dependence of nonlinear signals are fully consistent with crystal symmetry. The enhanced nonlinearity is semiquantitatively explained by the asymmetric Hall effect of vortex-antivortex string pairs in noncentrosymmetric systems. This study enriches the literature on nonlinear phenomena by elucidating quantum transport in noncentrosymmetric superconductors. Even-order nonlinear transport is a powerful probe of quantum materials, but such studies in superconductors have been limited to those which break time-reversal symmetry. Here, the authors observe second-order nonlinear transport in time-reversal-symmetric PbTaSe2, where the nonlinearity is enhanced in the superconducting state.
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110
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Wang C, Xiao RC, Liu H, Zhang Z, Lai S, Zhu C, Cai H, Wang N, Chen S, Deng Y, Liu Z, Yang SA, Gao WB. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe 4. Natl Sci Rev 2022; 9:nwac020. [PMID: 36694799 PMCID: PMC9869080 DOI: 10.1093/nsr/nwac020] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2021] [Revised: 01/14/2022] [Accepted: 01/16/2022] [Indexed: 01/27/2023] Open
Abstract
The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.
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Affiliation(s)
| | | | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing100190, China
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
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111
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Ye C, Xie X, Lv W, Huang K, Yang AJ, Jiang S, Liu X, Zhu D, Qiu X, Tong M, Zhou T, Hsu CH, Chang G, Lin H, Li P, Yang K, Wang Z, Jiang T, Renshaw Wang X. Nonreciprocal Transport in a Bilayer of MnBi 2Te 4 and Pt. NANO LETTERS 2022; 22:1366-1373. [PMID: 35073094 DOI: 10.1021/acs.nanolett.1c04756] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here, we report an observation of nonreciprocal transport, that is, current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.
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Affiliation(s)
- Chen Ye
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Xiangnan Xie
- State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China
| | - Wenxing Lv
- Physics Laboratory, Industrial Training Center, Shenzhen Polytechnic, Shenzhen, Guangdong 518055, P.R. China
| | - Ke Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Sicong Jiang
- Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States
- Program of Materials Science and Engineering, University of California San Diego, La Jolla, California 92093-0418, United States
| | - Xue Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Dapeng Zhu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, P.R. China
- Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, P.R. China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering, Tongji University, Shanghai 200092, P.R. China
| | - Mingyu Tong
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, P.R. China
| | - Tong Zhou
- State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China
| | - Chuang-Han Hsu
- Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
| | - Hsin Lin
- Insitute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Peisen Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China
| | - Kesong Yang
- Department of NanoEngineering and Program of Chemical Engineering, University of California San Diego, La Jolla, California 92093-0448, United States
- Program of Materials Science and Engineering, University of California San Diego, La Jolla, California 92093-0418, United States
| | - Zhenyu Wang
- State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China
- National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100010, P.R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100084, P.R. China
| | - Tian Jiang
- State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, P.R. China
- Beijing Institute for Advanced Study, National University of Defense Technology, Changsha 410073, P.R. China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
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112
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Wang C, Gao Y, Xiao D. Intrinsic Nonlinear Hall Effect in Antiferromagnetic Tetragonal CuMnAs. PHYSICAL REVIEW LETTERS 2021; 127:277201. [PMID: 35061403 DOI: 10.1103/physrevlett.127.277201] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 11/18/2021] [Indexed: 06/14/2023]
Abstract
Detecting the orientation of the Néel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to the time-reversal-odd second order conductivity and can be used to detect the reversal of the Néel vector. In contrast, the Berry-curvature-dipole-induced nonlinear Hall effect depends linearly on relaxation time and is time-reversal even. We study the intrinsic nonlinear Hall effect in an antiferromagnetic metal: tetragonal CuMnAs, and show that its nonlinear Hall conductivity can reach the order of mA/V^{2}. The dependence on the chemical potential of such nonlinear Hall conductivity can be qualitatively explained by a tilted massive Dirac model. Moreover, we demonstrate its strong temperature dependence and briefly discuss its competition with the second order Drude conductivity. Finally, a complete survey of magnetic point groups is presented, providing guidelines for finding more antiferromagnetic materials with the intrinsic nonlinear Hall effect.
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Affiliation(s)
- Chong Wang
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Yang Gao
- ICQD, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Di Xiao
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
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113
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Liu H, Zhao J, Huang YX, Wu W, Sheng XL, Xiao C, Yang SA. Intrinsic Second-Order Anomalous Hall Effect and Its Application in Compensated Antiferromagnets. PHYSICAL REVIEW LETTERS 2021; 127:277202. [PMID: 35061417 DOI: 10.1103/physrevlett.127.277202] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2021] [Accepted: 11/23/2021] [Indexed: 06/14/2023]
Abstract
Response properties that are purely intrinsic to physical systems are of paramount importance in physics research, as they probe fundamental properties of band structures and allow quantitative calculation and comparison with experiment. For anomalous Hall transport in magnets, an intrinsic effect can appear at the second order to the applied electric field. We show that this intrinsic second-order anomalous Hall effect is associated with an intrinsic band geometric property-the dipole moment of Berry-connection polarizability (BCP) in momentum space. The effect has scaling relation and symmetry constraints that are distinct from the previously studied extrinsic contributions. Particularly, in antiferromagnets with PT symmetry, the intrinsic effect dominates. Combined with first-principles calculations, we demonstrate the first quantitative evaluation of the effect in the antiferromagnet Mn_{2}Au. We show that the BCP dipole and the resulting intrinsic second-order conductivity are pronounced around band near degeneracies. Importantly, the intrinsic response exhibits sensitive dependence on the Néel vector orientation with a 2π periodicity, which offers a new route for electric detection of the magnetic order in PT-invariant antiferromagnets.
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Affiliation(s)
- Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Jianzhou Zhao
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Co-Innovation Center for New Energetic Materials, Southwest University of Science and Technology, Mianyang 621010, China
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Xian-Lei Sheng
- School of Physics, Beihang University, Beijing 100191, China
| | - Cong Xiao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics, Hong Kong, China
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
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114
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Kiswandhi A, Osada T. Observation of possible nonlinear anomalous Hall effect in organic two-dimensional Dirac fermion system. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:105602. [PMID: 34874281 DOI: 10.1088/1361-648x/ac3fd5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Accepted: 12/03/2021] [Indexed: 06/13/2023]
Abstract
We report the observation of nonlinear anomalous Hall effect (NLAHE) in the multilayered organic conductor α-(BEDT-TTF)2I3in the charge order (CO) insulating phase just under the critical pressure for transition into two-dimensional (2D) massless Dirac fermion (DF) phase. We successfully extracted the finite nonlinear Hall voltage proportional to square current at zero magnetic field. The observed NLAHE features, current direction dependence and correlation with CO, are consistent with the previous estimation assuming 2D massive DF with a pair of tilted Dirac cones. This is the first observation of topological transport in organic conductors, and also the first example of NLAHE in the electronic phase with spontaneous symmetry breaking.
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Affiliation(s)
- Andhika Kiswandhi
- Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Toshihito Osada
- Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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115
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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116
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Nonlinear nanoelectrodynamics of a Weyl metal. Proc Natl Acad Sci U S A 2021; 118:2116366118. [PMID: 34819380 DOI: 10.1073/pnas.2116366118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 10/25/2021] [Indexed: 11/18/2022] Open
Abstract
Chiral Weyl fermions with linear energy-momentum dispersion in the bulk accompanied by Fermi-arc states on the surfaces prompt a host of enticing optical effects. While new Weyl semimetal materials keep emerging, the available optical probes are limited. In particular, isolating bulk and surface electrodynamics in Weyl conductors remains a challenge. We devised an approach to the problem based on near-field photocurrent imaging at the nanoscale and applied this technique to a prototypical Weyl semimetal TaIrTe4 As a first step, we visualized nano-photocurrent patterns in real space and demonstrated their connection to bulk nonlinear conductivity tensors through extensive modeling augmented with density functional theory calculations. Notably, our nanoscale probe gives access to not only the in-plane but also the out-of-plane electric fields so that it is feasible to interrogate all allowed nonlinear tensors including those that remained dormant in conventional far-field optics. Surface- and bulk-related nonlinear contributions are distinguished through their "symmetry fingerprints" in the photocurrent maps. Robust photocurrents also appear at mirror-symmetry breaking edges of TaIrTe4 single crystals that we assign to nonlinear conductivity tensors forbidden in the bulk. Nano-photocurrent spectroscopy at the boundary reveals a strong resonance structure absent in the interior of the sample, providing evidence for elusive surface states.
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117
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Jin KH, Oh E, Stania R, Liu F, Yeom HW. Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer. NANO LETTERS 2021; 21:9468-9475. [PMID: 34747625 DOI: 10.1021/acs.nanolett.1c02811] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin-orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.
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Affiliation(s)
- Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Eunseok Oh
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Roland Stania
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, United States
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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118
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Tan C, Deng MX, Zheng G, Xiang F, Albarakati S, Algarni M, Farrar L, Alzahrani S, Partridge J, Yi JB, Hamilton AR, Wang RQ, Wang L. Spin-Momentum Locking Induced Anisotropic Magnetoresistance in Monolayer WTe 2. NANO LETTERS 2021; 21:9005-9011. [PMID: 34694117 DOI: 10.1021/acs.nanolett.1c02329] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Monolayer WTe2 is predicted to be a quantum spin Hall insulator (QSHI), and its quantized edge transport has recently been demonstrated. However, one of the essential properties of a QSHI, spin-momentum locking of the helical edge states, has yet to be experimentally validated. Here, we measure and observe gate-controlled anisotropic magnetoresistance (AMR) in monolayer WTe2 devices. Electrically tuning the Fermi energy into the band gap, a large in-plane AMR is observed and the minimum of the in-plane AMR occurs when the applied magnetic field is perpendicular to the current direction. In line with the experimental observations, the theoretical predictions based on the band structure of monolayer WTe2 demonstrate that the AMR effect originates from spin-momentum locking in the helical edge states of monolayer WTe2. Our findings reveal that the spin quantization axis of the helical edge states in monolayer WTe2 can be precisely determined from AMR measurements.
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Affiliation(s)
- Cheng Tan
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Ming-Xun Deng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, SPTE, South China Normal University, Guangzhou 510006, China
| | - Guolin Zheng
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Feixiang Xiang
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Sultan Albarakati
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Meri Algarni
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Lawrence Farrar
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Saleh Alzahrani
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - James Partridge
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
| | - Jia Bao Yi
- Global Innovative Center for Advanced Nanomaterials, School of Engineering, University of Newcastle, Callaghan, New South Wales 2308, Australia
| | - Alex R Hamilton
- School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Rui-Qiang Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, SPTE, South China Normal University, Guangzhou 510006, China
| | - Lan Wang
- School of Science and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, RMIT Node, RMIT University, Melbourne, Victoria 3000, Australia
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119
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Wu JF, Ke SS, Guo Y, Zhang HW, Lü HF. Noncentrosymmetric Weyl phase and topological phase transition in bulk MoTe. Phys Chem Chem Phys 2021; 23:23196-23202. [PMID: 34622258 DOI: 10.1039/d1cp02793j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Ideal topological materials are those stable materials with less nontrivial band crossing near the Fermi surface and a long Fermi arc. By means of first-principles calculations, here we present that the 3D monochalcogenide molybdenum telluride (Pm-MoTe) without an inversion center shows a type-II Weyl semimetal (WSM) phase which cannot checked by symmetry index method. A total of eight Weyl points (WPs) are found in different quadrants of the Brillouin zone (BZ) of Pm-MoTe, which guarantee a long Fermi arc. The WSM phase is robust against the spin-orbit coupling (SOC) effect because of mirror symmetry and time reversal symmetry. It is also found that a topological phase transition can be tuned by strain. For different types of strain, the number of WPs can be effectively modulated to a minimum number, and their energies could be closer to Fermi level. These findings propose a promising material candidate that partly satisfies the ideal WSM criteria and extends the potential applications of the tunable topological phase.
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Affiliation(s)
- Jia-Fang Wu
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Sha-Sha Ke
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yong Guo
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Huai-Wu Zhang
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Hai-Feng Lü
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. .,Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
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120
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Soares DM, Singh G. Weyl semimetal orthorhombic Td-WTe 2as an electrode material for sodium- and potassium-ion batteries. NANOTECHNOLOGY 2021; 32:505402. [PMID: 34488215 DOI: 10.1088/1361-6528/ac23f3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 09/06/2021] [Indexed: 06/13/2023]
Abstract
Alkali metals such as sodium and potassium have become promising candidates for the next generation of monovalent-ion batteries. However, a challenge for these battery technologies lies in the development of electrode materials that deliver high capacity and stable performance even at high cycling currents. Here we study orthorhombic tungsten ditelluride or Td-WTe2as an electrode material for sodium- (SIB) and potassium-ion batteries (KIB) in propylene carbonate (PC) based electrolyte. Results show that despite larger Shannon's radius of potassium-ions and their sluggish diffusion in Td-WTe2due to higher overpotential, at 100 mA.g-1KIB-half cells showed higher cycling stability and low capacity decay of 4% versus 16% compared to SIB-half cells. Likewise, in a rate capability test at 61stcycle (at 50 mA.g-1), the KIB-half cells yielded charge capacity of 172 mAh.g-1versus 137 mAh.g-1of SIB-half cells. The superior electrochemical performance of Td-WTe2electrode material in KIB-half cells is explained based on the concept of Stokes' radius-smaller desolvation activation energy resulted in higher mobility of potassium-ions in PC-based electrolyte. In addition, the likely mechanisms of electrochemical insertion and extraction of Na- and K-ions in Td-WTe2are also discussed.
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Affiliation(s)
- Davi Marcelo Soares
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, 66506, United States of America
| | - Gurpreet Singh
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, 66506, United States of America
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121
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Jing R, Shao Y, Fei Z, Lo CFB, Vitalone RA, Ruta FL, Staunton J, Zheng WJC, Mcleod AS, Sun Z, Jiang BY, Chen X, Fogler MM, Millis AJ, Liu M, Cobden DH, Xu X, Basov DN. Terahertz response of monolayer and few-layer WTe 2 at the nanoscale. Nat Commun 2021; 12:5594. [PMID: 34552072 PMCID: PMC8458490 DOI: 10.1038/s41467-021-23933-z] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2020] [Accepted: 05/17/2021] [Indexed: 02/08/2023] Open
Abstract
Tungsten ditelluride (WTe2) is an atomically layered transition metal dichalcogenide whose physical properties change systematically from monolayer to bilayer and few-layer versions. In this report, we use apertureless scattering-type near-field optical microscopy operating at Terahertz (THz) frequencies and cryogenic temperatures to study the distinct THz range electromagnetic responses of mono-, bi- and trilayer WTe2 in the same multi-terraced micro-crystal. THz nano-images of monolayer terraces uncovered weakly insulating behavior that is consistent with transport measurements. The near-field signal on bilayer regions shows moderate metallicity with negligible temperature dependence. Subdiffractional THz imaging data together with theoretical calculations involving thermally activated carriers favor the semimetal scenario with [Formula: see text] over the semiconductor scenario for bilayer WTe2. Also, we observed clear metallic behavior of the near-field signal on trilayer regions. Our data are consistent with the existence of surface plasmon polaritons in the THz range confined to trilayer terraces in our specimens. Finally, data for microcrystals up to 12 layers thick reveal how the response of a few-layer WTe2 asymptotically approaches the bulk limit.
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Affiliation(s)
- Ran Jing
- Department of Physics, Columbia University, New York, NY, USA.
| | - Yinming Shao
- Department of Physics, Columbia University, New York, NY, USA
| | - Zaiyao Fei
- Department of Physics, University of Washington, Seattle, WA, USA
| | | | | | - Francesco L Ruta
- Department of Physics, Columbia University, New York, NY, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
| | - John Staunton
- Department of Physics, Columbia University, New York, NY, USA
| | | | | | - Zhiyuan Sun
- Department of Physics, Columbia University, New York, NY, USA
| | - Bor-Yuan Jiang
- Department of Physics, University of California, San Diego, La Jolla, CA, USA
| | - Xinzhong Chen
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, USA
| | - Michael M Fogler
- Department of Physics, University of California, San Diego, La Jolla, CA, USA
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, NY, USA
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, USA
| | - Mengkun Liu
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, USA
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Material Science and Engineering, University of Washington, Seattle, WA, USA
| | - D N Basov
- Department of Physics, Columbia University, New York, NY, USA
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122
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Matsyshyn O, Piazza F, Moessner R, Sodemann I. Rabi Regime of Current Rectification in Solids. PHYSICAL REVIEW LETTERS 2021; 127:126604. [PMID: 34597109 DOI: 10.1103/physrevlett.127.126604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Revised: 06/29/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
We investigate rectified currents in response to oscillating electric fields in systems lacking inversion and time-reversal symmetries. These currents, in second-order perturbation theory, are inversely proportional to the relaxation rate, and, therefore, naively diverge in the ideal clean limit. Employing a combination of the nonequilibrium Green function technique and Floquet theory, we show that this is an artifact of perturbation theory, and that there is a well-defined periodic steady state akin to Rabi oscillations leading to finite rectified currents in the limit of weak coupling to a thermal bath. In this Rabi regime the rectified current scales as the square root of the radiation intensity, in contrast with the linear scaling of the perturbative regime, allowing us to readily diagnose it in experiments. More generally, our description provides a smooth interpolation from the ideal periodic Gibbs ensemble describing the Rabi oscillations of a closed system to the perturbative regime of rapid relaxation due to strong coupling to a thermal bath.
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Affiliation(s)
- Oles Matsyshyn
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Francesco Piazza
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Roderich Moessner
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Inti Sodemann
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
- Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
- Institut für Theoretische Physik, Universität Leipzig, D-04103 Leipzig, Germany
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123
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Hu LH, Yu J, Garate I, Liu CX. Phonon Helicity Induced by Electronic Berry Curvature in Dirac Materials. PHYSICAL REVIEW LETTERS 2021; 127:125901. [PMID: 34597081 DOI: 10.1103/physrevlett.127.125901] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Accepted: 08/12/2021] [Indexed: 06/13/2023]
Abstract
In two-dimensional insulators with time-reversal (TR) symmetry, a nonzero local Berry curvature of low-energy massive Dirac fermions can give rise to nontrivial spin and charge responses, even though the integral of the Berry curvature over all occupied states is zero. In this Letter, we present a new effect induced by the electronic Berry curvature. By studying electron-phonon interactions in BaMnSb_{2}, a prototype two-dimensional Dirac material possessing two TR-related massive Dirac cones, we find that the nonzero local Berry curvature of electrons can induce a phonon angular momentum. The direction of this phonon angular momentum is locked to the phonon propagation direction, and thus we refer to it as "phonon helicity" in a way that is reminiscent of electron helicity in spin-orbit-coupled electronic systems. We discuss possible experimental probes of such phonon helicity.
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Affiliation(s)
- Lun-Hui Hu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Jiabin Yu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
- Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Ion Garate
- Département de Physique, Institut Quantique and Regroupement Québécois sur les Matériaux de Pointe, Université de Sherbrooke, Sherbrooke, Québec, Canada J1K 2R1
| | - Chao-Xing Liu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
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124
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de la Barrera SC, Cao Q, Gao Y, Gao Y, Bheemarasetty VS, Yan J, Mandrus DG, Zhu W, Xiao D, Hunt BM. Direct measurement of ferroelectric polarization in a tunable semimetal. Nat Commun 2021; 12:5298. [PMID: 34489428 PMCID: PMC8421369 DOI: 10.1038/s41467-021-25587-3] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 08/19/2021] [Indexed: 11/09/2022] Open
Abstract
Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe2, a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables measurement of the spontaneous polarization as free carriers are added to the system. Here we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe2 to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe2 is thus shown to be a fully tunable ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.
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Affiliation(s)
| | - Qingrui Cao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA
| | - Yang Gao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA
| | - Yuan Gao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA.,International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, China
| | | | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - David G Mandrus
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA.,Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA.,Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, China
| | - Di Xiao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA
| | - Benjamin M Hunt
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, USA.
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125
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Joseph NB, Narayan A. Topological properties of bulk and bilayer 2M WS 2: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:465001. [PMID: 34399421 DOI: 10.1088/1361-648x/ac1de1] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Recently discovered 2M phase of bulk WS2was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS2. We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of theZ2invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS2as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the Wdand Spstates. By means ofZ2invariant computations and a calculation of the edge states, we show that bilayer 2M WS2exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that Berry curvature dipole signals, which are absent in the centrosymmetric bulk 2M WS2, can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.
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Affiliation(s)
- Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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126
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Du ZZ, Wang CM, Sun HP, Lu HZ, Xie XC. Quantum theory of the nonlinear Hall effect. Nat Commun 2021; 12:5038. [PMID: 34413295 PMCID: PMC8377135 DOI: 10.1038/s41467-021-25273-4] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Accepted: 07/28/2021] [Indexed: 02/07/2023] Open
Abstract
The nonlinear Hall effect is an unconventional response, in which a voltage can be driven by two perpendicular currents in the Hall-bar measurement. Unprecedented in the family of the Hall effects, it can survive time-reversal symmetry but is sensitive to the breaking of discrete and crystal symmetries. It is a quantum transport phenomenon that has deep connection with the Berry curvature. However, a full quantum description is still absent. Here we construct a quantum theory of the nonlinear Hall effect by using the diagrammatic technique. Quite different from nonlinear optics, nearly all the diagrams account for the disorder effects, which play decisive role in the electronic transport. After including the disorder contributions in terms of the Feynman diagrams, the total nonlinear Hall conductivity is enhanced but its sign remains unchanged for the 2D tilted Dirac model, compared to the one with only the Berry curvature contribution. We discuss the symmetry of the nonlinear conductivity tensor and predict a pure disorder-induced nonlinear Hall effect for point groups C3, C3h, C3v, D3h, D3 in 2D, and T, Td, C3h, D3h in 3D. This work will be helpful for explorations of the topological physics beyond the linear regime.
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Affiliation(s)
- Z Z Du
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
- Department of Physics, Shanghai Normal University, Shanghai, China
| | - Hai-Peng Sun
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China.
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
- Beijing Academy of Quantum Information Sciences, Beijing, China
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127
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Topological Phase and Quantum Anomalous Hall Effect in Ferromagnetic Transition-Metal Dichalcogenides Monolayer 1T-VSe2. NANOMATERIALS 2021; 11:nano11081998. [PMID: 34443830 PMCID: PMC8401610 DOI: 10.3390/nano11081998] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 07/28/2021] [Accepted: 07/29/2021] [Indexed: 12/04/2022]
Abstract
Magnetic two-dimensional (2D) van der Waals materials have attracted tremendous attention because of their high potential in spintronics. In particular, the quantum anomalous Hall (QAH) effect in magnetic 2D layers shows a very promising prospect for hosting Majorana zero modes at the topologically protected edge states in proximity to superconductors. However, the QAH effect has not yet been experimentally realized in monolayer systems to date. In this work, we study the electronic structures and topological properties of the 2D ferromagnetic transition-metal dichalcogenides (TMD) monolayer 1T−VSe2 by first-principles calculations with the Heyd–Scuseria–Ernzerhof (HSE) functional. We find that the spin-orbit coupling (SOC) opens a continuous band gap at the magnetic Weyl-like crossing point hosting the quantum anomalous Hall effect with Chern number C=2. Moreover, we demonstrate the topologically protected edge states and intrinsic (spin) Hall conductivity in this magnetic 2D TMD system. Our results indicate that 1T−VSe2 monolayer serves as a stoichiometric quantum anomalous Hall material.
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128
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Lai S, Liu H, Zhang Z, Zhao J, Feng X, Wang N, Tang C, Liu Y, Novoselov KS, Yang SA, Gao WB. Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor. NATURE NANOTECHNOLOGY 2021; 16:869-873. [PMID: 34168343 DOI: 10.1038/s41565-021-00917-0] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Accepted: 04/26/2021] [Indexed: 06/13/2023]
Abstract
Nonlinear responses in transport measurements are linked to material properties not accessible at linear order1 because they follow distinct symmetry requirements2-5. While the linear Hall effect indicates time-reversal symmetry breaking, the second-order nonlinear Hall effect typically requires broken inversion symmetry1. Recent experiments on ultrathin WTe2 demonstrated this connection between crystal structure and nonlinear response6,7. The observed second-order nonlinear Hall effect can probe the Berry curvature dipole, a band geometric property, in non-magnetic materials, just like the anomalous Hall effect probes the Berry curvature in magnetic materials8,9. Theory predicts that another intrinsic band geometric property, the Berry-connection polarizability tensor10, gives rise to higher-order signals, but it has not been probed experimentally. Here, we report a third-order nonlinear Hall effect in thick Td-MoTe2 samples. The third-order signal is found to be the dominant response over both the linear- and second-order ones. Angle-resolved measurements reveal that this feature results from crystal symmetry constraints. Temperature-dependent measurement shows that the third-order Hall response agrees with the Berry-connection polarizability contribution evaluated by first-principles calculations. The third-order nonlinear Hall effect provides a valuable probe for intriguing material properties that are not accessible at lower orders and may be employed for high-order-response electronic devices.
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Affiliation(s)
- Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Jianzhou Zhao
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Chaolong Tang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - K S Novoselov
- Department of Material Science & Engineering, National University of Singapore, Singapore, Singapore.
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore.
| | - Wei-Bo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore.
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129
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Wawrzik D, You JS, Facio JI, van den Brink J, Sodemann I. Infinite Berry Curvature of Weyl Fermi Arcs. PHYSICAL REVIEW LETTERS 2021; 127:056601. [PMID: 34397225 DOI: 10.1103/physrevlett.127.056601] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Accepted: 06/29/2021] [Indexed: 06/13/2023]
Abstract
We show that Weyl Fermi arcs are generically accompanied by a divergence of the surface Berry curvature scaling as 1/k^{2}, where k is the distance to a hot line in the surface Brillouin zone that connects the projection of Weyl nodes with opposite chirality, but which is distinct from the Fermi arc itself. Such surface Berry curvature appears whenever the bulk Weyl dispersion has a velocity tilt toward the surface of interest. This divergence is reflected in a variety of Berry curvature mediated effects that are readily accessible experimentally and, in particular, leads to a surface Berry curvature dipole that grows linearly with the thickness of a slab of a Weyl semimetal material in the limit of the long lifetime of surface states. This implies the emergence of a gigantic contribution to the nonlinear Hall effect in such devices.
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Affiliation(s)
- Dennis Wawrzik
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
| | - Jhih-Shih You
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Jorge I Facio
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
| | - Jeroen van den Brink
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
- Institut für Theoretische Physik and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Inti Sodemann
- Max Planck Institute for the Physics of Complex Systems, Nöthnitzer Straße 38, 01187 Dresden, Germany
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130
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Jin G, Zheng D, He L. Calculation of Berry curvature using non-orthogonal atomic orbitals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:325503. [PMID: 34044372 DOI: 10.1088/1361-648x/ac05e5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 05/27/2021] [Indexed: 06/12/2023]
Abstract
We present a derivation of the full formula to calculate the Berry curvature on non-orthogonal numerical atomic orbital (NAO) bases. Because usually, the number of NAOs is larger than that of the Wannier bases, we use a orbital contraction method to reduce the basis sizes, which can greatly improve the calculation efficiency without significantly reducing the calculation accuracy. We benchmark the formula by calculating the Berry curvature of ferroelectric BaTiO3and bcc Fe, as well as the anomalous Hall conductivity for Fe. The results are in excellent agreement with the finite-difference and previous results in the literature. We find that there are corrections terms to the Kubo formula of the Berry curvature. For the full NAO base, the differences between the two methods are negligibly small, but for the reduced bases sets, the correction terms become larger, which may not be neglected in some cases. The formula developed in this work can readily be applied to the non-orthogonal generalized Wannier functions.
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Affiliation(s)
- Gan Jin
- Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Daye Zheng
- Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Lixin He
- Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026, People's Republic of China
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131
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Kozuka Y, Isogami S, Masuda K, Miura Y, Das S, Fujioka J, Ohkubo T, Kasai S. Observation of Nonlinear Spin-Charge Conversion in the Thin Film of Nominally Centrosymmetric Dirac Semimetal SrIrO_{3} at Room Temperature. PHYSICAL REVIEW LETTERS 2021; 126:236801. [PMID: 34170165 DOI: 10.1103/physrevlett.126.236801] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Revised: 12/02/2020] [Accepted: 05/07/2021] [Indexed: 06/13/2023]
Abstract
Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wave function in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demonstrated in noncentrosymmetric materials with nontrivial spin texture in the momentum space. Here, we report the observation of the nonlinear charge-spin conversion in a nominally centrosymmetric oxide material SrIrO_{3} by breaking inversion symmetry at the interface. A large second-order magnetoelectric coefficient is observed at room temperature because of the antisymmetric spin-orbit interaction at the interface of Dirac semimetallic bands, which is subject to the symmetry constraint of the substrates. Our study suggests that nonlinear spin-charge conversion can be induced in many materials with strong spin-orbit interaction at the interface by breaking the local inversion symmetry to give rise to spin splitting in otherwise spin degenerate systems.
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Affiliation(s)
- Y Kozuka
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - S Isogami
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - K Masuda
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Y Miura
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - Saikat Das
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - J Fujioka
- Faculty of Material Science, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
| | - T Ohkubo
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
| | - S Kasai
- Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba 305-0047, Japan
- Japan Science and Technology Agency, PRESTO, Kawaguchi, Saitama 332-0012, Japan
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132
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Li Y, Oh T, Son J, Song J, Kim MK, Song D, Kim S, Chang SH, Kim C, Yang B, Noh TW. Correlated Magnetic Weyl Semimetal State in Strained Pr 2 Ir 2 O 7. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008528. [PMID: 33988861 PMCID: PMC11468559 DOI: 10.1002/adma.202008528] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Revised: 03/17/2021] [Indexed: 06/12/2023]
Abstract
Correlated topological phases (CTPs) with interplay between topology and electronic correlations have attracted tremendous interest in condensed matter physics. Therein, correlated Weyl semimetals (WSMs) are rare in nature and, thus, have so far been less investigated experimentally. In particular, the experimental realization of the interacting WSM state with logarithmic Fermi velocity renormalization has not been achieved yet. Here, experimental evidence of a correlated magnetic WSM state with logarithmic renormalization in strained pyrochlore iridate Pr2 Ir2 O7 (PIO) which is a paramagnetic Luttinger semimetal in bulk, is reported. Benefitting from epitaxial strain, "bulk-absent" all-in-all-out antiferromagnetic ordering can be stabilized in PIO film, which breaks time-reversal symmetry and leads to a magnetic WSM state. With further analysis of the experimental data and renormalization group calculations, an interacting Weyl liquid state with logarithmically renormalized Fermi velocity, similar to that in graphene, is found, dressed by long-range Coulomb interactions. This work highlights the interplay of strain, magnetism, and topology with electronic correlations, and paves the way for strain-engineering of CTPs in pyrochlore iridates.
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Affiliation(s)
- Yangyang Li
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Taekoo Oh
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
- Center for Theoretical Physics (CTP)Seoul National UniversitySeoul08826Republic of Korea
| | - Jaeseok Son
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Jeongkeun Song
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Mi Kyung Kim
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Dongjun Song
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Sukhyun Kim
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Seo Hyoung Chang
- Department of PhysicsChung‐Ang UniversitySeoul156–756Republic of Korea
| | - Changyoung Kim
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
| | - Bohm‐Jung Yang
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
- Center for Theoretical Physics (CTP)Seoul National UniversitySeoul08826Republic of Korea
| | - Tae Won Noh
- Center for Correlated Electron SystemsInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- Department of Physics and AstronomySeoul National UniversitySeoul08826Republic of Korea
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133
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Ji S, Grånäs O, Weissenrieder J. Manipulation of Stacking Order in Td-WTe 2 by Ultrafast Optical Excitation. ACS NANO 2021; 15:8826-8835. [PMID: 33913693 PMCID: PMC8291768 DOI: 10.1021/acsnano.1c01301] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
Subtle changes in stacking order of layered transition metal dichalcogenides may have profound influence on the electronic and optical properties. The intriguing electronic properties of Td-WTe2 can be traced to the break of inversion symmetry resulting from the ground-state stacking sequence. Strategies for perturbation of the stacking order are actively pursued for intentional tuning of material properties, where optical excitation is of specific interest since it holds the potential for integration of ultrafast switches in future device designs. Here we investigate the structural response in Td-WTe2 following ultrafast photoexcitation by time-resolved electron diffraction. A 0.23 THz shear phonon, involving layer displacement along the b axis, was excited by a 515 nm laser pulse. Pump fluences in excess of a threshold of ∼1 mJ/cm2 result in formation, with an ∼5 ps time constant, of a new stacking order by layer displacement along the b axis in the direction toward the centrosymmetric 1T* phase. The shear displacement of the layers increases with pump fluence until saturation at ∼8 pm. We demonstrate that the excitation of the shear phonon and the stabilization of the metastable phase are decoupled when using an optical pump as evidenced by observation of a transition also in samples with a pinned shear phonon. The results are compared to dynamic first-principles simulations and the transition is interpreted in terms of a mechanism where transient local disorder is prominent before settling at the atomic positions of the metastable phase. This interpretation is corroborated by results from diffuse scattering. The correlation between excitation of intralayer vibrations and interlayer interaction demonstrates the importance of including both short- and long-range interactions in an accurate description of how optical fields can be employed to manipulate the stacking order in 2-dimensional transition metal dichalcogenides.
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Affiliation(s)
- Shaozheng Ji
- Materials
and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Oscar Grånäs
- Division
for Materials Theory, Department of Physics and Astronomy, Uppsala University, SE-751 20 Uppsala, Sweden
| | - Jonas Weissenrieder
- Materials
and Nano Physics, School of Engineering Sciences, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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134
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Zhang Y, Fu L. Terahertz detection based on nonlinear Hall effect without magnetic field. Proc Natl Acad Sci U S A 2021; 118:e2100736118. [PMID: 34001618 PMCID: PMC8166175 DOI: 10.1073/pnas.2100736118] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
We propose a method for broadband long-wavelength photodetection using the nonlinear Hall effect in noncentrosymmetric quantum materials. The inherently quadratic relation between transverse current and input voltage at zero magnetic field is used to rectify the incident terahertz or infrared electric field into a direct current, without invoking any diode. Our photodetector operates at zero external bias with fast response speed and has zero threshold voltage. Remarkably, the intrinsic current responsivity due to the Berry curvature mechanism is a material property independent of the incident frequency or the scattering rate, which can be evaluated from first-principles electronic structure calculations. We identify the Weyl semimetal NbP and ferroelectric semiconductor GeTe for terahertz/infrared photodetection with large current responsivity without external bias.
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Affiliation(s)
- Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
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135
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Tiwari A, Chen F, Zhong S, Drueke E, Koo J, Kaczmarek A, Xiao C, Gao J, Luo X, Niu Q, Sun Y, Yan B, Zhao L, Tsen AW. Giant c-axis nonlinear anomalous Hall effect in T d-MoTe 2 and WTe 2. Nat Commun 2021; 12:2049. [PMID: 33824340 PMCID: PMC8024290 DOI: 10.1038/s41467-021-22343-5] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Accepted: 03/10/2021] [Indexed: 02/01/2023] Open
Abstract
While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without an inversion center allow for a nonlinear type of anomalous Hall effect whilst retaining time reversal symmetry. The effect may arise from either Berry curvature or through various asymmetric scattering mechanisms. Here, we report the observation of an extremely large c-axis nonlinear anomalous Hall effect in the non-centrosymmetric Td phase of MoTe2 and WTe2 without intrinsic magnetic order. We find that the effect is dominated by skew-scattering at higher temperatures combined with another scattering process active at low temperatures. Application of higher bias yields an extremely large Hall ratio of E⊥/E|| = 2.47 and corresponding anomalous Hall conductivity of order 8 × 107 S/m.
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Affiliation(s)
- Archana Tiwari
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Fangchu Chen
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Shazhou Zhong
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada
| | - Elizabeth Drueke
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Jahyun Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Austin Kaczmarek
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Cong Xiao
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Qian Niu
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Liuyan Zhao
- Department of Physics, University of Michigan, Ann Arbor, MI, USA
| | - Adam W Tsen
- Institute for Quantum Computing, Department of Physics and Astronomy, and Department of Chemistry, University of Waterloo, Waterloo, ON, Canada.
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136
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Kumar D, Hsu CH, Sharma R, Chang TR, Yu P, Wang J, Eda G, Liang G, Yang H. Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe 4. NATURE NANOTECHNOLOGY 2021; 16:421-425. [PMID: 33495620 DOI: 10.1038/s41565-020-00839-3] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Accepted: 12/11/2020] [Indexed: 06/12/2023]
Abstract
The nonlinear Hall effect (NLHE), the phenomenon in which a transverse voltage can be produced without a magnetic field, provides a potential alternative for rectification or frequency doubling1,2. However, the low-temperature detection of the NLHE limits its applications3,4. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of the NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of a temperature-induced shift in the chemical potential, indicating a direct correlation of the NLHE with the electronic structure at the Fermi surface. Finally, on the basis of the observed room-temperature NLHE in TaIrTe4 we demonstrate the wireless radiofrequency (RF) rectification with zero external bias and magnetic field. This work opens a door to realizing room-temperature applications based on the NLHE in Weyl semimetals.
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Affiliation(s)
- Dushyant Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Chuang-Han Hsu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Raghav Sharma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, Taiwan
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, People's Republic of China
| | - Junyong Wang
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Goki Eda
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Gengchiau Liang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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137
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Xu H, Fei F, Chen Z, Bo X, Sun Z, Wan X, Han L, Wang L, Zhang K, Zhang J, Chen G, Liu C, Guo W, Yang L, Wei D, Song F, Chen X, Lu W. Colossal Terahertz Photoresponse at Room Temperature: A Signature of Type-II Dirac Fermiology. ACS NANO 2021; 15:5138-5146. [PMID: 33620212 DOI: 10.1021/acsnano.0c10304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The discovery of Dirac semimetal has stimulated bourgeoning interests for exploring exotic quantum-transport phenomena, holding great promise for manipulating the performance of photoelectric devices that are related to nontrivial band topology. Nevertheless, it still remains elusive on both the device implementation and immediate results, with some enhanced or technically applicable electronic properties signified by the Dirac fermiology. By means of Pt doping, a type-II Dirac semimetal Ir1-xPtxTe2 with protected crystal structure and tunable Fermi level has been achieved in this work. It has been envisioned that the metal-semimetal-metal device exhibits an order of magnitude performance improvement at terahertz frequency when the Fermi level is aligned with the Dirac node (i.e., x ∼ 0.3) and a room-temperature photoresponsivity of 0.52 A·W-1 at 0.12 THz and 0.45 A·W-1 at 0.3 THz, which benefited from the excitation of type-II Dirac fermions. Furthermore, van der Waals integration with Dirac semimetals exhibits superb performance with noise equivalent power less than 24 pW·Hz-0.5, rivaling the state-of-the-art detectors. Our work provides a route to explore the nontrivial topology of Dirac semimetal for addressing targeted applications in imaging and biomedical sensing across a terahertz gap.
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Affiliation(s)
- Huang Xu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, No. 19A Yu-quan Road, Beijing 100049, China
| | - Fucong Fei
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, No. 19A Yu-quan Road, Beijing 100049, China
| | - Xiangyan Bo
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Li Han
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
| | - Lin Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, No. 19A Yu-quan Road, Beijing 100049, China
| | - Kaixuan Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
| | - Jiazhen Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, No. 19A Yu-quan Road, Beijing 100049, China
| | - Gang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Changlong Liu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Wanlong Guo
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Luhan Yang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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138
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Momentum space toroidal moment in a photonic metamaterial. Nat Commun 2021; 12:1784. [PMID: 33741969 PMCID: PMC7979886 DOI: 10.1038/s41467-021-22063-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Accepted: 02/24/2021] [Indexed: 11/20/2022] Open
Abstract
Berry curvature, the counterpart of the magnetic field in the momentum space, plays a vital role in the transport of electrons in condensed matter physics. It also lays the foundation for the emerging field of topological physics. In the three-dimensional systems, much attention has been paid to Weyl points, which serve as sources and drains of Berry curvature. Here, we demonstrate a toroidal moment of Berry curvature with flux approaching to π in judiciously engineered metamaterials. The Berry curvature exhibits a vortex-like configuration without any source and drain in the momentum space. Experimentally, the presence of Berry curvature toroid is confirmed by the observation of conical-frustum shaped domain-wall states at the interfaces formed by two metamaterials with opposite toroidal moments. The appearance of toroidal multipolar moments in electrodynamics interrogates the question for their existence in Berry curvature, which can be seen as the “magnetic field” in the momentum space. Here, the authors observe 3D vortex distributions in the Berry curvature within a photonic metamaterial.
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139
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Cheon Y, Lim SY, Kim K, Cheong H. Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and T d MoTe 2. ACS NANO 2021; 15:2962-2970. [PMID: 33480685 DOI: 10.1021/acsnano.0c09162] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe2 samples and observed both 1T' and Td phases at room temperature. Few-layer 1T' and Td MoTe2 exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe2. In contrast to bulk 1T' MoTe2 crystals, where the phase transition to the Td phase occurs at ∼250 K, the temperature-driven phase transition to the Td phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor Td phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies.
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Affiliation(s)
- Yeryun Cheon
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Kangwon Kim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Korea
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140
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Dzsaber S, Yan X, Taupin M, Eguchi G, Prokofiev A, Shiroka T, Blaha P, Rubel O, Grefe SE, Lai HH, Si Q, Paschen S. Giant spontaneous Hall effect in a nonmagnetic Weyl-Kondo semimetal. Proc Natl Acad Sci U S A 2021; 118:e2013386118. [PMID: 33608457 PMCID: PMC7923621 DOI: 10.1073/pnas.2013386118] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Nontrivial topology in condensed-matter systems enriches quantum states of matter to go beyond either the classification into metals and insulators in terms of conventional band theory or that of symmetry-broken phases by Landau's order parameter framework. So far, focus has been on weakly interacting systems, and little is known about the limit of strong electron correlations. Heavy fermion systems are a highly versatile platform to explore this regime. Here we report the discovery of a giant spontaneous Hall effect in the Kondo semimetal [Formula: see text] that is noncentrosymmetric but preserves time-reversal symmetry. We attribute this finding to Weyl nodes-singularities of the Berry curvature-that emerge in the immediate vicinity of the Fermi level due to the Kondo interaction. We stress that this phenomenon is distinct from the previously detected anomalous Hall effect in materials with broken time-reversal symmetry; instead, it manifests an extreme topological response that requires a beyond-perturbation-theory description of the previously proposed nonlinear Hall effect. The large magnitude of the effect in even tiny electric and zero magnetic fields as well as its robust bulk nature may aid the exploitation in topological quantum devices.
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Affiliation(s)
- Sami Dzsaber
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Xinlin Yan
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Mathieu Taupin
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Gaku Eguchi
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Andrey Prokofiev
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria
| | - Toni Shiroka
- Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zurich, Switzerland
- Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
| | - Peter Blaha
- Institute of Materials Chemistry, Vienna University of Technology, 1040 Vienna, Austria
| | - Oleg Rubel
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L8, Canada
| | - Sarah E Grefe
- Department of Physics and Astronomy, Rice Center for Quantum Materials, Rice University, Houston, TX 77005
| | - Hsin-Hua Lai
- Department of Physics and Astronomy, Rice Center for Quantum Materials, Rice University, Houston, TX 77005
| | - Qimiao Si
- Department of Physics and Astronomy, Rice Center for Quantum Materials, Rice University, Houston, TX 77005
| | - Silke Paschen
- Institute of Solid State Physics, Vienna University of Technology, 1040 Vienna, Austria;
- Department of Physics and Astronomy, Rice Center for Quantum Materials, Rice University, Houston, TX 77005
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141
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He P, Isobe H, Zhu D, Hsu CH, Fu L, Yang H. Quantum frequency doubling in the topological insulator Bi 2Se 3. Nat Commun 2021; 12:698. [PMID: 33514744 PMCID: PMC7846578 DOI: 10.1038/s41467-021-20983-1] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Accepted: 01/06/2021] [Indexed: 11/09/2022] Open
Abstract
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit. Berry curvature dipole (BCD) leads to the nonlinear Hall effect manifested as a frequency doubling in topological materials. Here, the authors report electric frequency doubling in the absence of BCD and magnetic field on a surface of Bi2Se3 due to skew scattering arising from inherent chirality of the topological surface states.
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Affiliation(s)
- Pan He
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.,Institute for Nanoelectronic devices and Quantum computing, Fudan University, Shanghai, 200433, China
| | - Hiroki Isobe
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Dapeng Zhu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Chuang-Han Hsu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.
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142
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Shi J, Huan Y, Zhao X, Yang P, Hong M, Xie C, Pennycook S, Zhang Y. Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material. ACS NANO 2021; 15:1858-1868. [PMID: 33445868 DOI: 10.1021/acsnano.0c10250] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe2) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe2 nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe2 can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm2 V-1 s-1) was achieved in 1T-VTe2-contacted monolayer MoS2 devices than that using a conventional Ti/Au electrode (∼8.1 cm2 V-1 s-1). Moreover, the CVD-synthesized 1T-VTe2 nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.
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Affiliation(s)
- Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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143
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Abstract
The rise of two-dimensional (2D) crystalline superconductors has opened a new frontier of investigating unconventional quantum phenomena in low dimensions. However, despite the enormous advances achieved towards understanding the underlying physics, practical device applications like sensors and detectors using 2D superconductors are still lacking. Here, we demonstrate nonreciprocal antenna devices based on atomically thin NbSe2. Reversible nonreciprocal charge transport is unveiled in 2D NbSe2 through multi-reversal antisymmetric second harmonic magnetoresistance isotherms. Based on this nonreciprocity, our NbSe2 antenna devices exhibit a reversible nonreciprocal sensitivity to externally alternating current (AC) electromagnetic waves, which is attributed to the vortex flow in asymmetric pinning potentials driven by the AC driving force. More importantly, a successful control of the nonreciprocal sensitivity of the antenna devices has been achieved by applying electromagnetic waves with different frequencies and amplitudes. The device’s response increases with increasing electromagnetic wave amplitude and exhibits prominent broadband sensing from 5 to 900 MHz. Here, the authors observe reversible nonreciprocal charge transport in two-dimensional NbSe2, and demonstrate antenna devices exhibiting strong sensitivity to driving AC electromagnetic waves in the superconducting regime.
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144
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Choi YB, Xie Y, Chen CZ, Park J, Song SB, Yoon J, Kim BJ, Taniguchi T, Watanabe K, Kim J, Fong KC, Ali MN, Law KT, Lee GH. Evidence of higher-order topology in multilayer WTe 2 from Josephson coupling through anisotropic hinge states. NATURE MATERIALS 2020; 19:974-979. [PMID: 32632280 DOI: 10.1038/s41563-020-0721-9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2019] [Accepted: 06/01/2020] [Indexed: 06/11/2023]
Abstract
Td-WTe2 (non-centrosymmetric and orthorhombic), a type-II Weyl semimetal, is expected to have higher-order topological phases with topologically protected, helical one-dimensional hinge states when its Weyl points are annihilated. However, the detection of these hinge states is difficult due to the semimetallic behaviour of the bulk. In this study, we have spatially resolved the hinge states by analysing the magnetic field interference of the supercurrent in Nb-WTe2-Nb proximity Josephson junctions. The Josephson current along the a axis of the WTe2 crystal, but not along the b axis, showed a sharp enhancement at the edges of the junction, and the amount of enhanced Josephson current was comparable to the upper limits of a single one-dimensional helical channel. Our experimental observations suggest a higher-order topological phase in WTe2 and its corresponding anisotropic topological hinge states, in agreement with theoretical calculations. Our work paves the way for the study of hinge states in topological transition-metal dichalcogenides and analogous phases.
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Affiliation(s)
- Yong-Bin Choi
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Yingming Xie
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Chui-Zhen Chen
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
- Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou, China
| | - Jinho Park
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Su-Beom Song
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Jiho Yoon
- Max Plank Institute for Microstructure Physics, Halle (Saale), Germany
| | - B J Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
| | - Jonghwan Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Kin Chung Fong
- Raytheon BBN Technologies, Quantum Information Processing Group, Cambridge, MA, USA.
| | - Mazhar N Ali
- Max Plank Institute for Microstructure Physics, Halle (Saale), Germany.
| | - Kam Tuen Law
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.
- Asia Pacific Center for Theoretical Physics, Pohang, Republic of Korea.
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145
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Shi J, Huan Y, Xiao M, Hong M, Zhao X, Gao Y, Cui F, Yang P, Pennycook SJ, Zhao J, Zhang Y. Two-Dimensional Metallic NiTe 2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity. ACS NANO 2020; 14:9011-9020. [PMID: 32579341 DOI: 10.1021/acsnano.0c03940] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs) supply a versatile platform for investigating newfangled physical issues and developing potential applications in electronics/spintronics/electrocatalysis. Among these, NiTe2 (a type-II Dirac semimetal) possesses a Dirac point near its Fermi level. However, as-prepared 2D MTMDCs are mostly environmentally unstable, and little attention has been paid to synthesizing such materials. Herein, a general chemical vapor deposition (CVD) approach has been designed to prepare thickness-tunable and large-domain (∼1.5 mm) 1T-NiTe2 on an atomically flat mica substrate. Significantly, ultrahigh conductivity (∼1.15 × 106 S m-1) of CVD-synthesized 1T-NiTe2 and high catalytic activity in pH-universal hydrogen evolution reaction have been uncovered. More interestingly, the 2D 1T-NiTe2 maintains robust environmental stability for more than one year and even after a variety of harsh treatments. These results hereby fill an existing research gap in synthesizing environmentally stable 2D MTMDCs, making fundamental progress in developing 2D MTMDC-based devices/catalysts.
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Affiliation(s)
- Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yinlu Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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146
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Singh S, Kim J, Rabe KM, Vanderbilt D. Engineering Weyl Phases and Nonlinear Hall Effects in T_{d}-MoTe_{2}. PHYSICAL REVIEW LETTERS 2020; 125:046402. [PMID: 32794815 DOI: 10.1103/physrevlett.125.046402] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 07/09/2020] [Accepted: 06/23/2020] [Indexed: 06/11/2023]
Abstract
MoTe_{2} has recently attracted much attention due to the observation of pressure-induced superconductivity, exotic topological phase transitions, and nonlinear quantum effects. However, there has been debate on the intriguing structural phase transitions among various observed phases of MoTe_{2} and their connection to the underlying topological electronic properties. In this work, by means of density-functional theory calculations, we investigate the structural phase transition between the polar T_{d} and nonpolar 1T^{'} phases of MoTe_{2} in reference to a hypothetical high-symmetry T_{0} phase that exhibits higher-order topological features. In the T_{d} phase we obtain a total of 12 Weyl points, which can be created/annihilated, dynamically manipulated, and switched by tuning a polar phonon mode. We also report the existence of a tunable nonlinear Hall effect in T_{d}-MoTe_{2} and propose the use of this effect as a probe for the detection of polarity orientation in polar (semi)metals. By studying the role of dimensionality, we identify a configuration in which a nonlinear surface response current emerges. The potential technological applications of the tunable Weyl phase and the nonlinear Hall effect are discussed.
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Affiliation(s)
- Sobhit Singh
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - Karin M Rabe
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA
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147
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Wang AQ, Ye XG, Yu DP, Liao ZM. Topological Semimetal Nanostructures: From Properties to Topotronics. ACS NANO 2020; 14:3755-3778. [PMID: 32286783 DOI: 10.1021/acsnano.9b07990] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.
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Affiliation(s)
- An-Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Da-Peng Yu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China
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148
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Pizzi G, Vitale V, Arita R, Blügel S, Freimuth F, Géranton G, Gibertini M, Gresch D, Johnson C, Koretsune T, Ibañez-Azpiroz J, Lee H, Lihm JM, Marchand D, Marrazzo A, Mokrousov Y, Mustafa JI, Nohara Y, Nomura Y, Paulatto L, Poncé S, Ponweiser T, Qiao J, Thöle F, Tsirkin SS, Wierzbowska M, Marzari N, Vanderbilt D, Souza I, Mostofi AA, Yates JR. Wannier90 as a community code: new features and applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:165902. [PMID: 31658458 DOI: 10.1088/1361-648x/ab51ff] [Citation(s) in RCA: 270] [Impact Index Per Article: 54.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Wannier90 is an open-source computer program for calculating maximally-localised Wannier functions (MLWFs) from a set of Bloch states. It is interfaced to many widely used electronic-structure codes thanks to its independence from the basis sets representing these Bloch states. In the past few years the development of Wannier90 has transitioned to a community-driven model; this has resulted in a number of new developments that have been recently released in Wannier90 v3.0. In this article we describe these new functionalities, that include the implementation of new features for wannierisation and disentanglement (symmetry-adapted Wannier functions, selectively-localised Wannier functions, selected columns of the density matrix) and the ability to calculate new properties (shift currents and Berry-curvature dipole, and a new interface to many-body perturbation theory); performance improvements, including parallelisation of the core code; enhancements in functionality (support for spinor-valued Wannier functions, more accurate methods to interpolate quantities in the Brillouin zone); improved usability (improved plotting routines, integration with high-throughput automation frameworks), as well as the implementation of modern software engineering practices (unit testing, continuous integration, and automatic source-code documentation). These new features, capabilities, and code development model aim to further sustain and expand the community uptake and range of applicability, that nowadays spans complex and accurate dielectric, electronic, magnetic, optical, topological and transport properties of materials.
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Affiliation(s)
- Giovanni Pizzi
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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149
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Chen M, Lee K, Li J, Cheng L, Wang Q, Cai K, Chia EEM, Chang H, Yang H. Anisotropic Picosecond Spin-Photocurrent from Weyl Semimetal WTe 2. ACS NANO 2020; 14:3539-3545. [PMID: 32160456 DOI: 10.1021/acsnano.9b09828] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The generation and detection of ultrafast spin current, preferably reaching a frequency up to terahertz, is the core of spintronics. Studies have shown that the Weyl semimetal WTe2 is of great potential in generating spin currents. However, the prior studies have been limited to the static measurements with the in-plane spin orientation. In this work, we demonstrate a picosecond spin-photocurrent in a Td-WTe2 thin film via a terahertz time domain spectroscopy with a circularly polarized laser excitation. The anisotropic dependence of the circular photogalvanic effect (CPGE) in the terahertz emission reveals that the picosecond spin-photocurrent is generated along the rotational asymmetry a-axis. Notably, the generated spins are aligned along the out-of-plane direction under the light normally incident to the film surface, which provides an efficient means to manipulate magnetic devices with perpendicular magnetic anisotropy. A spin-splitting band induced by intrinsic inversion symmetry breaking enables the manipulation of a spin current by modulating the helicity of the laser excitation. Moreover, CPGE nearly vanishes at a transition temperature of ∼175 K due to the carrier compensation. Our work provides an insight into the dynamic behavior of the anisotropic spin-photocurrent of Td-WTe2 in terahertz frequencies and shows a great potential for the future development of terahertz-spintronic devices with Weyl semimetals.
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Affiliation(s)
- Mengji Chen
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Kyusup Lee
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Jie Li
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Liang Cheng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Qisheng Wang
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Kaiming Cai
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Haixin Chang
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering and NUSNNI, National University of Singapore, 117576, Singapore
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150
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Song P, Hsu CH, Vignale G, Zhao M, Liu J, Deng Y, Fu W, Liu Y, Zhang Y, Lin H, Pereira VM, Loh KP. Coexistence of large conventional and planar spin Hall effect with long spin diffusion length in a low-symmetry semimetal at room temperature. NATURE MATERIALS 2020; 19:292-298. [PMID: 32015531 DOI: 10.1038/s41563-019-0600-4] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2019] [Accepted: 12/20/2019] [Indexed: 06/10/2023]
Abstract
The spin Hall effect (SHE) is usually observed as a bulk effect in high-symmetry crystals with substantial spin-orbit coupling (SOC), where the symmetric spin-orbit field imposes a widely encountered trade-off between spin Hall angle (θSH) and spin diffusion length (Lsf), and spin polarization, spin current and charge current are constrained to be mutually orthogonal. Here, we report a large θSH of 0.32 accompanied by a long Lsf of 2.2 μm at room temperature in a low-symmetry few-layered semimetal MoTe2, thus identifying it as an excellent candidate for simultaneous spin generation, transport and detection. In addition, we report that longitudinal spin current with out-of-plane polarization can be generated by both transverse and vertical charge current, due to the conventional and a newly observed planar SHE, respectively. Our study suggests that manipulation of crystalline symmetries and strong SOC opens access to new charge-spin interconversion configurations and spin-orbit torques for spintronic applications.
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Affiliation(s)
- Peng Song
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Chuang-Han Hsu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Giovanni Vignale
- Yale-NUS College, Singapore, Singapore
- Department of Physics, University of Missouri, Columbia, MO, USA
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Innovis, Singapore, Singapore
| | - Jiawei Liu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Yujun Deng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Wei Fu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Yanpeng Liu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
- Department of Chemistry, National University of Singapore, Singapore, Singapore
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei, Taiwan.
| | - Vitor M Pereira
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Kian Ping Loh
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore.
- Department of Chemistry, National University of Singapore, Singapore, Singapore.
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