Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications

Nozzle-Free Printing of CNT Electronics Using Laser-Generated Focused Ultrasound

Printed electronics have made remarkable progress in recent years and inkjet printing (IJP) has emerged as one of the leading methods for fabricating printed electronic devices. However, challenges such as nozzle clogging, and strict ink formulation constraints have limited their widespread use. To address this issue, a novel nozzle-free printing technology is explored, which is enabled by laser-generated focused ultrasound, as a potential alternative printing modality called Shock-wave Jet Printing (SJP). Specifically, the performance of SJP-printed and IJP-printed bottom-gated carbon nanotube (CNT) thin film transistors (TFTs) is compared. While IJP required ten print passes to achieve fully functional devices with channel dimensions ranging from tens to hundreds of micrometers, SJP achieved comparable performance with just a single pass. For optimized devices, SJP demonstrated six times higher maximum mobility than IJP-printed devices. Furthermore, the advantages of nozzle-free printing are evident, as SJP successfully printed stored and unsonicated inks, delivering moderate electrical performance, whereas IJP suffered from nozzle clogging due to CNT agglomeration. Moreover, SJP can print significantly longer CNTs, spanning the entire range of tube lengths of commercially available CNT ink. The findings from this study contribute to the advancement of nanomaterial printing, ink formulation, and the development of cost-effective printable electronics.

Quantum Confinement in Epitaxial Armchair Graphene Nanoribbons on SiC Sidewalls

The integration of graphene into devices necessitates large-scale growth and precise nanostructuring. Epitaxial growth of graphene on SiC surfaces offers a solution by enabling both simultaneous and targeted realization of quantum structures. We investigated the impact of local variations in the width and edge termination of armchair graphene nanoribbons (AGNRs) on quantum confinement effects using scanning tunneling microscopy and spectroscopy (STM, STS), along with density-functional tight-binding (DFTB) calculations. AGNRs were grown as an ensemble on refaceted sidewalls of SiC mesas with adjacent AGNRs separated by SiC(0001) terraces hosting a buffer layer seamlessly connected to the AGNRs. Energy band gaps measured by STS at the centers of ribbons of different widths align with theoretical expectations, indicating that hybridization of π-electrons with the SiC substrate mimics sharp electronic edges. However, regardless of the ribbon width, band gaps near the edges of AGNRs are significantly reduced. DFTB calculations successfully replicate this effect by considering the role of edge passivation, while strain or electric fields do not account for the observed effect. Unlike idealized nanoribbons with uniform hydrogen passivation, AGNRs on SiC sidewalls generate additional energy bands with non-pz character and nonuniform distribution across the nanoribbon. In AGNRs terminated with Si, these additional states occur at the conduction band edge and rapidly decay into the bulk of the ribbon. This agrees with our experimental findings, demonstrating that edge passivation is crucial in determining the local electronic properties of epitaxial nanoribbons.

Peptide-Functionalized Carbon Nanotube Chemiresistors: The Effect of Nanotube Density on Gas Sensing

Biorecognition element (BRE)-based carbon nanotube (CNT) chemiresistors have tremendous potential to serve as highly sensitive, selective, and power-efficient volatile organic compound (VOC) sensors. While many research groups have studied BRE-functionalized CNTs in material science and device development, little attention has been paid to optimizing CNT density to improve chemiresistor performance. To probe the effect of CNT density on VOC detection, we present the chemiresistor-based sensing results from two peptide-based CNT devices counting more than 60 different individual measurements. We find that a lower CNT density shows a significantly higher noise level and device-to-device variation while exhibiting mildly better sensitivity. Further investigation with SEM images suggests that moderately high CNT density with a stable connection of the nanotube network is desirable to achieve the best signal-to-noise ratio. Our results show an essential design guideline for tuning the nanotube density to provide sensitive and stable chemiresistors.

Rapid Uniformity Analysis of Fully Printed SWCNT-Based Thin Film Transistor Arrays via Roll-to-Roll Gravure Process

The roll-to-roll (R2R) gravure process has the potential for manufacturing single-wall carbon nanotubes (SWCNT)-based thin film transistor (TFT) arrays on a flexible plastic substrate. A significant hurdle toward the commercialization of the R2R-printed SWCNT-TFT array is the lack of a suitable, simple, and rapid method for measuring the uniformity of printed products. We developed a probing instrument for characterizing R2R gravure printed TFT, named PICR2R-TFT, for rapidly characterizing R2R-printed SWCNT-TFT array that can present a geographical distribution profile to pinpoint the failed devices in an SWCNT-TFT array. Using the newly developed PICR2R-TFT instrument, the current-voltage characteristics of the fabricated SWCNT-TFT devices could be correlated to various R2R-printing process parameters, such as channel length, roll printing length, and printing speed. Thus, by introducing a characterization tool that is reliable and fast, one can quickly optimize the R2R gravure printing conditions to enhance product uniformity, thereby maximizing the yield of printed SWCNT-TFT arrays.

Improving Stability of Roll-to-Roll (R2R) Gravure-Printed Carbon Nanotube-Based Thin Film Transistors via R2R Plasma-Enhanced Chemical Vapor-Deposited Silicon Nitride

Single-walled carbon nanotubes (SWCNTs) have an advantage in printing thin film transistors (TFTs) due to their high carrier mobility, excellent chemical stability, mechanical flexibility, and compatibility with solution-based processing. Thus, the printed SWCNT-based TFTs (pSWCNT-TFTs) showed significant technological potential such as integrated circuits, conformable sensors, and display backplanes. However, the long-term environmental stability of the pSWCNT-TFTs hinders their commercialization. Thus, to extend the stability of the pSWCNT-TFTs, such devices should be passivated with low water and oxygen permeability. Herein, we introduced the silicon nitride (SiNx) passivation method on the pSWCNT-TFTs via a combination of roll-to-roll (R2R) gravure and the roll-to-roll plasma-enhanced vapor deposition (R2R-PECVD) process at low temperature (45 °C). We found that SiNx-passivated pSWCNT-TFTs showed ± 0.50 V of threshold voltage change at room temperature for 3 days and ±1.2 V of threshold voltage change for 3 h through a Temperature Humidity Test (85/85 test: Humidity 85%/Temperature 85 °C) for both p-type and n-type pSWCNT-TFTs. In addition, we found that the SiNx-passivated p-type and n-type pSWCNT-TFT-based CMOS-like ring oscillator, or 1-bit code generator, operated well after the 85/85 test for 24 h.

Sorting and decoration of semiconducting single-walled carbon nanotubes via the quaternization reaction

A study for the selective separation and functionalization of alcohol-soluble semiconducting single-walled carbon nanotubes (sc-SWCNTs) is carried out by polymer main-chain engineering. Introducing tertiary amine groups endows the functionalized sc-SWCNTs with alcohol-soluble properties and introducing the pyrimidine rings allows to increase the selective purity of sc-SWCNTs. In this study, a series of poly[(9,9-dioctylfluorene)-2,7-(9,9-bis(3'-(N,N-dimethylamino)propyl)-fluorene)] m -alt-[2-methylpyrimidine-2,7-(9,9-dioctylfluorene)] n (PFPy) are used for the selective dispersion of semiconducting single-walled carbon nanotubes, where n and m are the composition ratio of the copolymer. When m = n, the effective isolation of sc-SWCNTs with purity greater than 99% is achieved. The alcohol-soluble sc-SWCNTs with a diameter in the range of 1.1-1.4 nm are obtained through designing reasonable molecular structure. Moreover, the particular preference of PFPy (m = n) for sc-SWCNTs was studied via density functional theory (DFT) calculations and it was proved to be a promising method for the separation and functionalization of sc-SWCNTs.

Enrichment of Semiconducting Single-Walled Carbon Nanotubes with Indigo-Fluorene-Based Copolymers and Their Use in Printed Thin-Film Transistors and Carbon Dioxide Gas Sensors

High-purity semiconducting single-walled carbon nanotubes (sc-SWCNTs) are promising for portable and high-sensitivity gas sensors because of their excellent physical and electrical properties. Here, we describe the synthesis of a novel indigo-fluorene-based copolymer (PFIDBoc) that has been designed to selectively enrich sc-SWCNTs with excellent purity (>99.9%) yet contain a latent function in the form of a tert-butoxy (t-BOC)-protected amine that can be later revealed and exploited for carbon dioxide (CO₂) gas sensing. SWCNTs wrapped with the PFIDBoc polymer can be easily converted via an on-chip thermal process to reveal a vinylogous amide moiety with a secondary amine nitrogen within the indigo building block of the copolymer which is perfectly suited for CO₂ recognition. Thin-film transistors and sensors were inkjet-printed onto rigid and flexible substrates, demonstrating the versatility of enriched PFIDBoc-derived sc-SWCNT dispersions. The printed transistors exhibited a mobility up to 9 cm² V^-1 s^-1 and on/off current ratios >10⁵. We further demonstrate herein a CO₂ sensor for indoor air quality monitoring even in low humidity environments, possessing a linear response with up to ∼5.4% sensitivity and a dynamic range between 400 and 2000 ppm in air with a relative humidity of ∼ 40%.

Engineering Supramolecular Polymer Conformation for Efficient Carbon Nanotube Sorting

Supramolecular polymer sorting is a promising approach to separating single-walled carbon nanotubes (CNTs) by electronic type. Unlike conjugated polymers, they can be easily removed from the CNTs after sorting by breaking the supramolecular bonds, allowing for isolation of electronically pristine CNTs as well as facile recycling of the sorting polymer. However, little is understood about how supramolecular polymer properties affect CNT sorting. Herein, chain stoppers are used to engineer the conformation of a supramolecular sorting polymer, thereby elucidating the relationship between sorting efficacy and polymer conformation. Through NMR and UV-vis spectroscopy, small-angle X-ray scattering (SAXS), and thermodynamic modeling, it is shown that this supramolecular polymer exhibits ring-chain equilibrium, and that this equilibrium can be skewed toward chains by the addition of chain stoppers. Furthermore, by controlling the stopper-monomer ratio, the sorting yield can be doubled from 7% to 14% without compromising the semiconducting purity (>99%) or properties of sorted CNTs.

Facile Fabrication of Semiconducting Single-Walled Carbon Nanotubes Patterns on Flexible Substrate Based on a Photoimmobilization Technique

Single-walled carbon nanotubes (SWCNTs) have attracted significant attention due to their outstanding properties. For their wide applications in electronics and optoelectronics, pure semiconducting SWCNTs (s-SWCNTs) and their precise placement are preconditions. Recent advances have focused on developing effective strategies to separate s-SWCNTs from raw SWCNTs, a mixture of metallic and semiconducting nanotubes, and deposit s-SWCNTs on target substrates. Herein, a polyfluorene-based alternative copolymer (PFBP) containing the benzophenone group was employed. PFBP achieved higher yield for s-SWCNTs than the well-studied poly(9,9-dioctylfluorene) through solution process. Subsequently, the dispersed s-SWCNTs were immobilized on a flexible polyethylene terephthalate in a facile manner by the photoreactive benzophenone group upon exposure to UV irradiation, and chemically robust patterns were fabricated from micro to macro scales through photomasks. Our method accomplished by utilizing photoimmobilization is a simple cleaning procedure and an important step forward in pitch scaling for further applications of conjugated polymer wrapped s-SWCNTs.

Self-Limiting Assembly Approaches for Nanoadditive Manufacturing of Electronic Thin Films and Devices

Most electronics consist of functional thin films with tens of nanometer thicknesses. It is usually challenging to control the growth of these thin films using conventional solution-based approaches. Nanoadditive manufacturing, a method to deposit electronically desired molecules, polymers, or nanomaterials in a layer-by-layer (LbL) fashion, has emerged as a promising technique for the precise control of film growth and device fabrication. Here, basic principles of nanoadditive manufacturing approaches with self-limiting characteristics are summarized with a particular focus on Langmuir-Blodgett assembly and LbL assembly. Additively manufactured electronic thin films with properties of conductors, semiconductors, and dielectrics are reviewed, followed by a discussion of their application in various electronics, such as field-effect transistors, sensors, memory devices, photodetectors, light-emitting diodes, and electrochromic devices. Finally, challenges and future developments of these approaches are proposed. The resulting analysis reveals promising opportunities of nanoadditive manufacturing for the solution-based fabrication of electronic devices.

Field-Dependent Heat Dissipation of Carbon Nanotube Electric Currents

We study heat dissipation of a multi-wall carbon nanotube (MWCNT) device fabricated from two crossed nanotubes on a SiN_x substrate under the influence of a constant (DC) electric bias. By monitoring the temperature of the substrate, we observe negligible Joule heating within the nanotube lattice itself and instead heating occurs in the insulating substrate directly via a remote-scattering heating effect. Using finite element analysis, we estimate a remote heating parameter, β, as the ratio of the power dissipated directly in the substrate to the total power applied. The extracted parameters show two distinct bias ranges; a low bias regime where about 85% of the power is dissipated directly into the substrate and a high bias regime where β decreases, indicating the onset of traditional Joule heating within the nanotube. Analysis shows that this reduction is consistent with enhanced scattering of charge carriers by optical phonons within the nanotube. The results provide insights into heat dissipation mechanisms of Joule heated nanotube devices that are more complex than a simple heat dissipation mechanism dominated by acoustic phonons, which opens new possibilities for engineering nanoelectronics with improved thermal management.

Printed Diodes: Materials Processing, Fabrication, and Applications

Printing techniques for the fabrication of diodes have received increasing attention over the last decade due to their great potential as alternatives for high-throughput and cost-effective manufacturing approaches compatible with both flexible and rigid substrates. Here, the progress achieved and the challenges faced in the fabrication of printed diodes are discussed and highlighted, with a focus on the materials of significance (silicon, metal oxides, nanomaterials, and organics), the techniques utilized for ink deposition (gravure printing, screen printing, inkjet printing, aerosol jet printing, etc.), and the process through which the printed layers of diode are sintered after printing. Special attention is also given to the device applications within which the printed diodes have been successfully incorporated, particularly in the fields of rectification, light emission, energy harvesting, and displays. Considering the unmatched production scalability of printed diodes and their intrinsic suitability for flexible and wearable applications, significant improvement in performance and intensive research in development and applications of the printed diodes will continuously progress in the future.

Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications

Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.

High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics

Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of polymers with a π-conjugated backbone, sc-SWCNTs with >99.9% purity can be dispersed in organic solvents via a simple sonication and centrifugation process. With 1000 times less excipient and the flexibility to accommodate a broad range of solvents via diverse polymer constructs, inks are readily deployable in solution-based fabrication processes such as aerosol spray, inkjet, and gravure. Further gains in sc-SWCNT purity, among other attributes, are possible with a better understanding of the structure-property relationships that govern conjugated polymer extraction. This Account covers three interlinked topics in SWCNT electronics: metrology, enrichment, and SWCNT transistors fabricated via solution processes. First, we describe how spectroscopic techniques such as optical absorption, fluorescence, and Raman spectroscopy are applied for sc-SWCNT purity assessment. Stringent requirements for sc-SWCNTs in electronics are pushing the techniques to new levels while serving as an important driver toward the development of quantitative metrology. Next, we highlight recent progress in understanding the sc-SWCNT enrichment process using conjugated polymers, with special consideration given to the effect of doping on the mechanism. Finally, developments in sc-SWCNT-based electronics are described, with emphasis on the performance of transistors utilizing random networks of sc-SWCNTs as the semiconducting channel material. Challenges and advances associated with using polymer-based dielectrics in the unique context of sc-SWCNT transistors are presented. Such transistor packages have enabled the realization of fully printed transistors as well as transparent and even stretchable transistors as a result of the unique and excellent electrical and mechanical properties of sc-SWCNTs.

Exploring the upper limit of single-walled carbon nanotube purity by multiple-cycle aqueous two-phase separation

Ultrahigh purity semiconducting single-walled carbon nanotubes (S-SWCNTs) are required for high-performance transistors. Aqueous two-phase (ATP) separation is an attractive method to obtain such SWCNTs due to its simplicity and scalability. This work targeted two questions; namely what is the upper limit of S-SWCNT purity that can be achieved by multiple cycles of ATP separation from the most commonly used polyethylene glycol and dextran system and how accurately can commonly used methods characterize the improvement in purity? SWCNT purity in nanotube dispersions obtained by multi-cycle ATP separation (2, 4, 6 and 8 cycles) was evaluated by three methods, including UV-vis-NIR absorption spectroscopy analysis, performance of thin-film field effect transistors (FETs) prepared by drop casting and short-channel FET devices prepared by dielectrophoresis deposition. Absorption spectroscopic analysis and the performance of the thin-film FET devices can hardly differentiate metallic SWCNT residues in the dispersions obtained after 4 cycles with the purity above 99.5%, and the short channel FET devices prepared by dielectrophoresis deposition are more sensitive towards tiny metallic SWCNT residues. A new method was also demonstrated to visualize the minor metallic content in the nanotube suspension using voltage contrast imaging in a scanning electron microscope, which enables rapid screening of many devices and the accurate obtainment of metallic content without performing a large number of individual transconductance measurements.

Recent Progress in the Development of Printed Thin-Film Transistors and Circuits with High-Resolution Printing Technology

Printed electronics enable the fabrication of large-scale, low-cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high-speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin-film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high-resolution printing technologies and strategies to enable high-resolution patterning. The main focus of this report is on obtaining printed electrodes with high-resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential.

Carbon nanotube transistors scaled to a 40-nanometer footprint

The International Technology Roadmap for Semiconductors challenges the device research community to reduce the transistor footprint containing all components to 40 nanometers within the next decade. We report on a p-channel transistor scaled to such an extremely small dimension. Built on one semiconducting carbon nanotube, it occupies less than half the space of leading silicon technologies, while delivering a significantly higher pitch-normalized current density—above 0.9 milliampere per micrometer at a low supply voltage of 0.5 volts with a subthreshold swing of 85 millivolts per decade. Furthermore, we show transistors with the same small footprint built on actual high-density arrays of such nanotubes that deliver higher current than that of the best-competing silicon devices under the same overdrive, without any normalization. We achieve this using low-resistance end-bonded contacts, a high-purity semiconducting carbon nanotube source, and self-assembly to pack nanotubes into full surface-coverage aligned arrays.

Dielectrophoresis-Assisted Integration of 1024 Carbon Nanotube Sensors into a CMOS Microsystem

Carbon-nanotube (CNT)-based sensors offer the potential to detect single-molecule events and picomolar analyte concentrations. An important step toward applications of such nanosensors is their integration in large arrays. The availability of large arrays would enable multiplexed and parallel sensing, and the simultaneously obtained sensor signals would facilitate statistical analysis. A reliable method to fabricate an array of 1024 CNT-based sensors on a fully processed complementary-metal-oxide-semiconductor microsystem is presented. A high-yield process for the deposition of CNTs from a suspension by means of liquid-coupled floating-electrode dielectrophoresis (DEP), which yielded 80% of the sensor devices featuring between one and five CNTs, is developed. The mechanism of floating-electrode DEP on full arrays and individual devices to understand its self-limiting behavior is studied. The resistance distributions across the array of CNT devices with respect to different DEP parameters are characterized. The CNT devices are then operated as liquid-gated CNT field-effect-transistors (LG-CNTFET) in liquid environment. Current dependency to the gate voltage of up to two orders of magnitude is recorded. Finally, the sensors are validated by studying the pH dependency of the LG-CNTFET conductance and it is demonstrated that 73% of the CNT sensors of a given microsystem show a resistance decrease upon increasing the pH value.

A Mixed-Extractor Strategy for Efficient Sorting of Semiconducting Single-Walled Carbon Nanotubes

A general strategy for sorting semiconducting single-walled carbon nanotubes (s-SWNTs) with high efficiency using a mixed-extractor is reported. When the two extractors have a sufficient difference in binding energy with s-SWNTs, and skeleton flexibility, the mixture shows enhanced yield for sorting s-SWNTs. The strategy could be effective when applied to increase the sorting yield of other selective dispersion systems.

Assembly and Electronic Applications of Colloidal Nanomaterials

Artificial solids and thin films assembled from colloidal nanomaterials give rise to versatile properties that can be exploited in a range of technologies. In particular, solution-based processes allow for the large-scale and low-cost production of nanoelectronics on rigid or mechanically flexible substrates. To achieve this goal, several processing steps require careful consideration, including nanomaterial synthesis or exfoliation, purification, separation, assembly, hybrid integration, and device testing. Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanomaterials in three electronic material categories are reviewed systematically: semiconductors, conductors, and dielectrics. The resulting comparative analysis reveals promising opportunities and remaining challenges for colloidal nanomaterials in electronic applications, thereby providing a roadmap for future research and development.

Horizontally aligned carbon nanotube arrays: growth mechanism, controlled synthesis, characterization, properties and applications

This review summarizes the growth mechanism, controlled synthesis, characterization, properties and applications of horizontally aligned carbon nanotube arrays.

Analysis Method for Quantifying the Morphology of Nanotube Networks

While atomic force microscopy (AFM) is a powerful technique for imaging assemblies and networks of nanoscale materials, approaches for quantitative assessment of the morphology of these materials are lacking. Here we present a volume-based approach for analyzing AFM images of assemblies of nano-objects that enables the extraction of relevant parameters describing their morphology. Random networks of single-walled carbon nanotubes (SWCNTs) deposited via solution-phase processing are used as an example to develop the method and demonstrate its utility. AFM imaging shows that the morphology of these networks depends on details of processing and is influenced by choice of substrate, substrate cleaning method, and postdeposition rinsing protocols. A method is outlined to analyze these images and extract relevant parameters describing the network morphology such as the density of SWCNTs and the degree to which tubes are bundled. Because this volume-based approach depends on accurate measurements of the height of individual tubes and their networks, a procedure for obtaining reliable height measurements is also discussed. Obtaining quantitative parameters that describe the network morphology allows going beyond qualitative descriptions of images and will facilitate optimizing network preparation methods based on measurable criteria and correlating performance with morphology.

Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.