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Zhu Y, Feng B, Su Y, Li G, Liu Y, Hou Y, Zhang J, Li W, Zhong G, Yang C, Chen M. Strong Covalent Coupling in Vertically Layered SnSe 2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors. NANO LETTERS 2024; 24:6778-6787. [PMID: 38767965 DOI: 10.1021/acs.nanolett.4c01515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.
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Affiliation(s)
- Yuanhao Zhu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Bohan Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Yuhan Su
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guangyuan Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yingming Liu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yuxin Hou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Jie Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenjie Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Guohua Zhong
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chunlei Yang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ming Chen
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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3
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Zhang Y, Chang Y, Zhao L, Liu H, Gao J. Atomic insight into the effects of precursor clusters on monolayer WSe 2. NANOSCALE 2024; 16:2391-2401. [PMID: 38226664 DOI: 10.1039/d3nr05562k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been attracting much attention due to their rich physical and chemical properties. At the end of the chemical vapor deposition growth of 2D TMDCs, the adsorption of excess precursor clusters onto the sample is unavoidable, which will have significant effects on the properties of TMDCs. This is a concern to the academic community. However, the structures of the supported precursor clusters and their effects on the properties of the prepared 2D TMDCs are still poorly understood. Herein, taking monolayer WSe2 as the prototype, we investigated the structure and electronic properties of SeN, WN (N = 1-8), and W8-NSeN (N = 1-7) clusters adsorbed on monolayer WSe2 to gain atomic insight into the precursor cluster adsorption. In contrast to W clusters that tightly bind to the WSe2 surface, Se clusters except for Se1 and Se2 are weakly adsorbed onto WSe2. The interaction between W8-NSeN (N = 1-7) clusters and the WSe2 monolayer decreases with the increase in the Se/W ratio and eventually becomes van der Waals interaction for W1Se7. According to the phase diagram, increasing the Se/W ratio by changing the experimental conditions will increase the ratio of SeN and W1Se7 clusters in the precursor, which can be removed by proper annealing after growth. W clusters induce lots of defect energy levels in the band gap region, while the adsorption of W1Se7 and SeN clusters (N = 3-6, 8) promotes the spatial separation of photo generated carriers at the interface, which is important for optoelectronic applications. Our results indicate that by controlling the Se/W ratio, the interaction between the precursor clusters and WSe2 as well as the electronic properties of the prepared WSe2 monolayer can be effectively tuned, which is significant for the high-quality growth and applications of WSe2.
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Affiliation(s)
- Yanxue Zhang
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Yuan Chang
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Luneng Zhao
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Hongsheng Liu
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Junfeng Gao
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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Xu Q, Wu Q, Wang C, Zhang X, Cai Z, Lin L, Gu X, Ostrikov KK, Nan H, Xiao S. High-performance multilayer WSe 2/SnS 2p-n heterojunction photodetectors by two step confined space chemical vapor deposition. NANOTECHNOLOGY 2023; 34:505604. [PMID: 37748477 DOI: 10.1088/1361-6528/acfcc3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 09/25/2023] [Indexed: 09/27/2023]
Abstract
Two-dimensional (2D) p-n heterojunctions have attracted great attention due to their outstanding properties in electronic and optoelectronic devices, especially in photodetectors. Various types of heterojunctions have been constituted by mechanical exfoliation and stacking. However, achieving controlled growth of heterojunction structures remains a tremendous challenge. Here, we employed a two-step KI-assisted confined-space chemical vapor deposition method to prepare multilayer WSe2/SnS2p-n heterojunctions. Optical characterization results revealed that the prepared WSe2/SnS2vertical heterostructures have clear interfaces as well as vertical heterostructures. The electrical and optoelectronic properties were investigated by constructing the corresponding heterojunction devices, which exhibited good rectification characteristics and obtained a high detectivity of 7.85 × 1012Jones and a photoresponse of 227.3 A W-1under visible light irradiation, as well as a fast rise/fall time of 166/440μs. These remarkable performances are likely attributed to the ultra-low dark current generated in the depletion region at the junction and the high direct tunneling current during illumination. This work demonstrates the value of multilayer WSe2/SnS2heterojunctions for applications in high-performance photodetectors.
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Affiliation(s)
- Qilei Xu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Qianqian Wu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Chenglin Wang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiumei Zhang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Zhengyang Cai
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Liangliang Lin
- School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Kostya Ken Ostrikov
- School of Physics and Chemistry and QUT Centre for Materials Science, Queensland University of Technology (QUT), Brisbane, Queensland 4000, Australia
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
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7
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Wang X, Choi J, Yoo J, Hong YJ. Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates. NANO CONVERGENCE 2023; 10:40. [PMID: 37648837 PMCID: PMC10468468 DOI: 10.1186/s40580-023-00387-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 08/13/2023] [Indexed: 09/01/2023]
Abstract
Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials. The lattice transparency as the fundamental principle of remote epitaxy has been studied and challenged by recent observations defying the concept. Understanding remote epitaxy requires an integrated approach of theoretical modeling and experimental validation at multi-scales because the phenomenon includes remote interactions of atoms across an atomically thin material and a few van der Waals gaps. The roles of atomically thin 2D material for the nucleation and growth of a 3D material have not been integrated into a framework of remote epitaxy research. Here, we summarize studies of remote epitaxy mechanisms with a comparison to other epitaxy techniques. In the end, we suggest the crucial topics of remote epitaxy research for basic science and applications.
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Affiliation(s)
- Xuejing Wang
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA
| | - Joonghoon Choi
- Department of Nanotechnology and Advanced Materials Engineering, GRI-TPC International Research Center, Sejong University, Seoul, 05006, South Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, USA.
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, GRI-TPC International Research Center, Sejong University, Seoul, 05006, South Korea.
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8
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Ali W, Liu Y, Huang M, Xie Y, Li Z. Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS 2/WSe 2 Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2349. [PMID: 37630934 PMCID: PMC10459064 DOI: 10.3390/nano13162349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 08/08/2023] [Accepted: 08/09/2023] [Indexed: 08/27/2023]
Abstract
Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure's thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.
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Affiliation(s)
- Wajid Ali
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ye Liu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Yunfei Xie
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; (W.A.)
- Wuhan National Laboratory for Optoelectronics, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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9
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Qu J, Liu C, Zubair M, Zeng Z, Liu B, Yang X, Luo Z, Yi X, Chen Y, Chen S, Pan A. A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets. NANOSCALE 2023; 15:4438-4447. [PMID: 36752096 DOI: 10.1039/d2nr05657g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimensional group IV-VI metal chalcogenide-based semiconductors hold great promise for opto-electronic device applications owing to their diverse crystalline phases and intriguing properties related to thermoelectric and ferroelectric effects. Herein, we demonstrate a universal chemical vapor deposition (CVD) growth method to synthesize stable germanium chalcogenide-based (GeS, GeS2, GeSe, GeSe2) nanosheets, which increases the library of the p-type semiconductor. The phase transition between different crystalline polytypes can be deterministically controlled by hydrogen concentration in the reaction chamber. Structural characterization and synthesis experiments identify the behavior, where the higher hydrogen concentration promotes the transiton from germanium dichalcogenides to germanium monochalcogenides. The angle-polarized and temperature-dependent Raman spectra demonstrate the strong interlayer coupling and lattice orientation. Based on the optimized growth scheme and systematic comparison of electrical properties, GeSe nanosheet photodetectors were demonstrated, which exhibit superior device performance on SiO2/Si and HfO2/Si substrate with a high photoresponsivity up to 104 A W-1, fast response time less than 15 ms, and high mobility of 3.2 cm2 V-1 s-1, which is comparable to the mechanically exfoliated crystals. Our results manifest the hydrogen-mediated deposition strategy as a facile control knob to engineer crystalline phases of germanium chalcogenides for high performance optoelectronic devices.
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Affiliation(s)
- Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Chenxi Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Muhammad Zubair
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China.
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
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10
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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11
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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12
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Xiao Y, Qu J, Luo Z, Chen Y, Yang X, Zhang D, Li H, Zheng B, Yi J, Wu R, You W, Liu B, Chen S, Pan A. Van der Waals epitaxial growth and optoelectronics of a vertical MoS 2/WSe 2 p-n junction. FRONTIERS OF OPTOELECTRONICS 2022; 15:41. [PMID: 36637698 PMCID: PMC9756242 DOI: 10.1007/s12200-022-00041-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Accepted: 04/21/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.
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Affiliation(s)
- Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Danliang Zhang
- School of Materials Science and Engineering, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha, 410082, China
| | - Honglai Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Rong Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Wenxia You
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
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13
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Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures. ELECTRONICS 2022. [DOI: 10.3390/electronics11152401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided.
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14
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Zou H, Wang X, Zhou K, Li Y, Fu Y, Zhang L. Electronic property modulation in two-dimensional lateral superlattices of monolayer transition metal dichalcogenides. NANOSCALE 2022; 14:10439-10448. [PMID: 35816154 DOI: 10.1039/d2nr02189g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Fabricating lateral heterostructures (HSs) and superlattices (SLs) provides a unique degree of freedom for modulating the physical properties of two-dimensional (2D) materials by varying the chemical component, geometric size and interface structure in the ultra-thin atomic thickness limit. While a variety of 2D lateral HSs/SLs have been synthesized, especially for transition metal dichalcogenides (TMDs), how such structures affect quantitatively the physical properties of 2D materials has not yet been established. We herein explore electronic property modulation in 2D lateral SLs of monolayer TMDs through first-principles high-throughput calculations. The dependence of the electronic structure, bandgap, carrier effective masses, charge density overlap on chemical components, interface type, and sub-lattice size of lateral TMD-SLs are investigated. We find that by comparison with their random alloy counterparts, the lateral TMD-SLs exhibit generally type-II band alignment, a wider range of bandgap tunability, larger carrier effective masses, and stronger electron-hole charge separation tendency. The bandgap variation with a sub-lattice size shows larger bowing parameters for the SLs with heterogeneous anions, by comparison with the homogeneous anion cases. A similar behavior is observed for the SLs with an armchair-type interface, by comparison with the zigzag-type interface cases. Further analyses reveal that the underlying physical mechanism can be attributed to the synergistic interplay among the band offset of sub-lattices, quantum confinement effect, and existing internal strain.
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Affiliation(s)
- Hongshuai Zou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Xinjiang Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Kun Zhou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yawen Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
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15
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Qi Z, Zhai X, Jiang X, Xu X, Fan C, Shen L, Xiao Q, Jiang S, Deng Q, Liu H, Jing F, Zhang Q. Epitaxy of NiTe 2 on WS 2 for the p-Type Schottky Contact and Increased Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2022; 14:31121-31130. [PMID: 35767657 DOI: 10.1021/acsami.2c06968] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have great potential applications in the electronic and optoelectronic devices. Nevertheless, due to the difficulty in the efficient doping of atomic-thickness TMDCs or Fermi level pinning (FLP) effects at the metal/semiconductor interface, most TMDC devices exhibit the n-type conduction polarity, which significantly limits their functional applications based on the p-n junction. Here, 2D semi-metal NiTe2 nanosheets were epitaxially grown on the WS2 monolayer by a two-step chemical vapor deposition route. The microstructure and optical characterizations confirm that the vertically stacked NiTe2/WS2 heterostructures are formed by van der Waals epitaxy. Interestingly, p-type WS2 field-effect transistors can be obtained with the hole mobility of ∼4.22 cm2/V·s, when the epitaxial NiTe2 sheets act as the source/drain electrodes. This is attributed to the decreased FLP effect and hence the low potential barrier for holes at the van der Waals contacts. Furthermore, the photodetectors based on the heterostructures show a 2 orders of magnitude increase in the switch ratio, responsivity, and detectivity and a 1 order of magnitude increase in the rise and decay speeds relative to those based on pristine WS2. This work paves the way to realize the p-type contact for monolayer WS2 with significantly enhanced optoelectronic performance.
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Affiliation(s)
- Zhuodong Qi
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Xiaokun Zhai
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Xiaohong Jiang
- Key Laboratory for Special Functional Materials, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China
| | - Xing Xu
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Chao Fan
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Lei Shen
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Qin Xiao
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Sha Jiang
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Qi Deng
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Hongjun Liu
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Fangli Jing
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Qinglin Zhang
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
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16
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Baidoo JK, Choi SH, Agyapong-Fordjour FOT, Boandoh S, Yun SJ, Adofo LA, Ben-Smith A, Kim YI, Jin JW, Jung MH, Jeong HY, Kim YM, Lee YH, Kim SM, Kim KK. Sequential Growth of Vertical Transition-Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil. ACS NANO 2022; 16:8851-8859. [PMID: 35713417 DOI: 10.1021/acsnano.1c10233] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superconductivity, robust quantum Hall phenomenon, electron-hole pair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost.
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Affiliation(s)
- Joseph Kojo Baidoo
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | | | - Stephen Boandoh
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Andrew Ben-Smith
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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17
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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18
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Zhang S, Deng X, Wu Y, Wang Y, Ke S, Zhang S, Liu K, Lv R, Li Z, Xiong Q, Wang C. Lateral layered semiconductor multijunctions for novel electronic devices. Chem Soc Rev 2022; 51:4000-4022. [PMID: 35477783 DOI: 10.1039/d1cs01092a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.
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Affiliation(s)
- Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shishu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China.,Frontier Science Center for Quantum Information, Beijing, 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
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19
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Ghosh R, Singh M, Chang LW, Lin HI, Chen YS, Muthu J, Papnai B, Kang YS, Liao YM, Bera KP, Guo GY, Hsieh YP, Hofmann M, Chen YF. Enhancing the Photoelectrochemical Hydrogen Evolution Reaction through Nanoscrolling of Two-Dimensional Material Heterojunctions. ACS NANO 2022; 16:5743-5751. [PMID: 35377604 DOI: 10.1021/acsnano.1c10772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The clean production of hydrogen from water using sunlight has emerged as a sustainable alternative toward large-scale energy generation and storage. However, designing photoactive semiconductors that are suitable for both light harvesting and water splitting is a pivotal challenge. Atomically thin transition metal dichalcogenides (TMD) are considered as promising photocatalysts because of their wide range of available electronic properties and compositional variability. However, trade-offs between carrier transport efficiency, light absorption, and electrochemical reactivity have limited their prospects. We here combine two approaches that synergistically enhance the efficiency of photocarrier generation and electrocatalytic efficiency of two-dimensional (2D) TMDs. The arrangement of monolayer WS2 and MoS2 into a heterojunction and subsequent nanostructuring into a nanoscroll (NS) yields significant modifications of fundamental properties from its constituents. Spectroscopic characterization and ab initio simulation demonstrate the beneficial effects of straining and wall interactions on the band structure of such a heterojunction-NS that enhance the electrochemical reaction rate by an order of magnitude compared to planar heterojunctions. Phototrapping in this NS further increases the light-matter interaction and yields superior photocatalytic performance compared to previously reported 2D material catalysts and is comparable to noble-metal catalyst systems in the photoelectrochemical hydrogen evolution reaction (PEC-HER) process. Our approach highlights the potential of morphologically varied TMD-based catalysts for PEC-HER.
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Affiliation(s)
- Rapti Ghosh
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwan
- Department of Physics, National Central University, Chung-Li 320, Taiwan
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Mukesh Singh
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Li Wei Chang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 106, Taiwan
| | - Hung-I Lin
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yu Siang Chen
- Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Jeyavelan Muthu
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | | | - Yi Sun Kang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yu-Ming Liao
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | | | - Guang-Yu Guo
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 106, Taiwan
| | - Ya-Ping Hsieh
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 106, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
- Advanced Research Centre for Green Materials Science and Technology, National Taiwan University, Taipei 106, Taiwan
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20
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Zhang Z, Yang X, Liu K, Wang R. Epitaxy of 2D Materials toward Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105201. [PMID: 35038381 PMCID: PMC8922126 DOI: 10.1002/advs.202105201] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/12/2021] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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21
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Wang D, Zhang Z, Huang B, Zhang H, Huang Z, Liu M, Duan X. Few-Layer WS 2-WSe 2 Lateral Heterostructures: Influence of the Gas Precursor Selenium/Tungsten Ratio on the Number of Layers. ACS NANO 2022; 16:1198-1207. [PMID: 34927429 DOI: 10.1021/acsnano.1c08979] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) lateral heterostructures based on transition metal dichalcogenides (TMDCs) attract great interest due to their properties and potential applications in electronics and optoelectronics, such as p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, the studies of 2D lateral heterostructures have mainly focused on monolayer nanosheets despite bilayer heterostructures exhibiting higher performance in many electronic and optoelectronic devices. It remains a great challenge to synthesize lateral heterostructures with few layers. Here, we report the growth of bilayer-bilayer (bl-bl), bilayer-bilayer-monolayer (bl-bl-mo), bilayer-monolayer (bl-mo), monolayer-bilayer (mo-bl), and monolayer-monolayer (mo-mo) tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures. The selenium/tungsten (Se/W) ratio of WSe2 precursor powders and the growth atmosphere can be changed with the extension of annealing time, which influences the layer number of the heterostructures. More bilayer WSe2 epitaxially grows at the WS2 edge with short annealing time (high Se/W ratio), and more monolayer WSe2 grows at the WS2 edge with long annealing time (low Se/W ratio). The density functional theory (DFT) calculations provide an in-depth understanding of the growth mechanism. This report expands the 2D material lateral heterostructure family, which gives impetus to their applications in electronics and optoelectronics.
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Affiliation(s)
- Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Miaomiao Liu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
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22
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Li F, Chen M, Wang Y, Zhu X, Zhang X, Zou Z, Zhang D, Yi J, Li Z, Li D, Pan A. Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS 2 heterostructure for sensitive photodetection. iScience 2021; 24:103031. [PMID: 34541467 PMCID: PMC8437799 DOI: 10.1016/j.isci.2021.103031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 06/15/2021] [Accepted: 08/20/2021] [Indexed: 11/18/2022] Open
Abstract
Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Key Laboratory of Inferior Crude Oil Processing of Guangdong Provincial Higher Education Institutes, School of Chemical Engineering, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
| | - Yajuan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
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23
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Bian R, Li C, Liu Q, Cao G, Fu Q, Meng P, Zhou J, Liu F, Liu Z. Recent progress in the synthesis of novel two-dimensional van der Waals materials. Natl Sci Rev 2021; 9:nwab164. [PMID: 35591919 PMCID: PMC9113016 DOI: 10.1093/nsr/nwab164] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Revised: 07/21/2021] [Accepted: 08/15/2021] [Indexed: 11/15/2022] Open
Abstract
Abstract
The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.
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Affiliation(s)
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore 637553, Singapore
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
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24
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Zhang H, Li Q, Hossain M, Li B, Chen K, Huang Z, Yang X, Dang W, Shu W, Wang D, Li B, Xu W, Zhang Z, Yu G, Duan X. Phase-Selective Synthesis of Ultrathin FeTe Nanoplates by Controllable Fe/Te Atom Ratio in the Growth Atmosphere. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101616. [PMID: 34270865 DOI: 10.1002/smll.202101616] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2021] [Revised: 05/11/2021] [Indexed: 06/13/2023]
Abstract
Phase controllable synthesis of 2D materials is of significance for tuning related electrical, optical, and magnetic properties. Herein, the phase-controllable synthesis of tetragonal and hexagonal FeTe nanoplates has been realized by a rational control of the Fe/Te ratio in a chemical vapor deposition system. Using density functional theory calculations, it has been revealed that with the change of the Fe/Te ratio, the formation energy of active clusters changes, causing the phase-controllable synthesis of FeTe nanoplates. The thickness of the obtained FeTe nanoplates can be tuned down to the 2D limit (2.8 nm for tetragonal and 1.4 nm for hexagonal FeTe). X-ray diffraction pattern, transmission electron microscopy, and high resolution scanning transmission electron microscope analyses exhibit the high crystallinity of the as-grown FeTe nanoplates. The two kinds of FeTe nanoflakes show metallic behavior and good electrical conductivity, featuring 8.44 × 104 S m-1 for 9.8 nm-thick tetragonal FeTe and 5.45 × 104 S m-1 for 7.6 nm-thick hexagonal FeTe. The study provides an efficient and convenient route for tailoring the phases of FeTe nanoplates, which benefits to study phase-sensitive properties, and may pave the way for the synthesis of other multiphase 2D nanosheets with controllable phases.
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Affiliation(s)
- Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Qiuqiu Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Mongur Hossain
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bo Li
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Keqiu Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Weiqi Dang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Weining Shu
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Weiting Xu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Gang Yu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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25
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Zhou X, Yu G. Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications. ACS NANO 2021; 15:11040-11065. [PMID: 34264631 DOI: 10.1021/acsnano.1c02985] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.
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Affiliation(s)
- Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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26
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Zou Z, Liang J, Zhang X, Ma C, Xu P, Yang X, Zeng Z, Sun X, Zhu C, Liang D, Zhuang X, Li D, Pan A. Liquid-Metal-Assisted Growth of Vertical GaSe/MoS 2 p-n Heterojunctions for Sensitive Self-Driven Photodetectors. ACS NANO 2021; 15:10039-10047. [PMID: 34036786 DOI: 10.1021/acsnano.1c01643] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals (vdW) vertical p-n junctions based on two-dimensional (2D) materials have shown great potential in flexible, self-driven, high-efficiency electronic and optoelectronic applications. However, due to the complex nucleation dynamics, the controllable synthesis of vertical heterostructures remains a daunting challenge. Here, we report the controlled growth of vertical GaSe/MoS2 p-n heterojunctions via a liquid gallium (Ga)-assisted chemical vapor deposition method. The growth mechanism can be interpreted by theoretical calculations based on the Burton-Cabrera-Frank theory. By analyzing the diffusion barriers and the Ehrlich-Schwoebel barriers of adatoms, we found that the growth modes between vertical and lateral can be precisely switched by means of adjusting the amount of Ga. Based on the achieved high-quality vertical GaSe/MoS2 p-n heterojunctions, photosensing devices are further designed and systematically investigated. Upon light illumination, prominent photovoltaic effects with large open-circuit voltage (0.61 V) and broadband detection capability from 375 to 633 nm are observed, which can further be employed for self-powered photodetection with high responsivity (900 mA/W) and fast response speed (5 ms). The developed liquid-metal-assisted strategy provides an effective method for controllable synthesis of vdW heterostructures and will give impetus to their applications in high-performance optoelectronic device.
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Affiliation(s)
- Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Junwu Liang
- School of Physics and Telecommunication Engineering, Yulin Normal University, Yulin, Guangxi 537000, P.R. China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Pan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P.R. China
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27
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Xu J, Srolovitz DJ, Ho D. The Adatom Concentration Profile: A Paradigm for Understanding Two-Dimensional MoS 2 Morphological Evolution in Chemical Vapor Deposition Growth. ACS NANO 2021; 15:6839-6848. [PMID: 33750113 DOI: 10.1021/acsnano.0c10474] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The two-dimensional (2D) transition metal dichalcogenide (TMD) MoS2 possesses many intriguing electronic and optical properties. Potential technological applications have focused much attention on tuning MoS2 properties through control of its morphologies during growth. In this paper, we present a unified spatial-temporal model for the growth of MoS2 crystals with a full spectrum of shapes from triangles, concave triangles, three-point stars, to dendrites through the concept of the adatom concentration profile (ACP). We perform a series of chemical vapor deposition (CVD) experiments controlling adatom concentration on the substrate and growth temperature and present a method for experimentally measuring the ACP in the vicinity of growing islands. We apply a phase-field model of growth that explicitly considers similar variables (adatom concentration, adatom diffusion, and noise effects) and cross-validate the simulations and experiments through the ACP and island morphologies as a function of physically controllable variables. Our calculations reproduce the experimental observations with high fidelity. The ACP is an alternative paradigm to conceptualize the growth of crystals through time, which is expected to be instrumental in guiding the rational shape engineering of MoS2 crystals.
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Affiliation(s)
- Jiangang Xu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - David J Srolovitz
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Derek Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
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28
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Wang S, Cui X, Jian C, Cheng H, Niu M, Yu J, Yan J, Huang W. Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005735. [PMID: 33719078 DOI: 10.1002/adma.202005735] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Revised: 10/30/2020] [Indexed: 06/12/2023]
Abstract
The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
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Affiliation(s)
- Shixuan Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Xuehao Cui
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Chang'e Jian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Haowei Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Mengmeng Niu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jia Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jiaxu Yan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
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29
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Zhao B, Wan Z, Liu Y, Xu J, Yang X, Shen D, Zhang Z, Guo C, Qian Q, Li J, Wu R, Lin Z, Yan X, Li B, Zhang Z, Ma H, Li B, Chen X, Qiao Y, Shakir I, Almutairi Z, Wei F, Zhang Y, Pan X, Huang Y, Ping Y, Duan X, Duan X. High-order superlattices by rolling up van der Waals heterostructures. Nature 2021; 591:385-390. [PMID: 33731947 DOI: 10.1038/s41586-021-03338-0] [Citation(s) in RCA: 93] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Accepted: 02/08/2021] [Indexed: 01/31/2023]
Abstract
Two-dimensional (2D) materials1,2 and the associated van der Waals (vdW) heterostructures3-7 have provided great flexibility for integrating distinct atomic layers beyond the traditional limits of lattice-matching requirements, through layer-by-layer mechanical restacking or sequential synthesis. However, the 2D vdW heterostructures explored so far have been usually limited to relatively simple heterostructures with a small number of blocks8-18. The preparation of high-order vdW superlattices with larger number of alternating units is exponentially more difficult, owing to the limited yield and material damage associated with each sequential restacking or synthesis step8-29. Here we report a straightforward approach to realizing high-order vdW superlattices by rolling up vdW heterostructures. We show that a capillary-force-driven rolling-up process can be used to delaminate synthetic SnS2/WSe2 vdW heterostructures from the growth substrate and produce SnS2/WSe2 roll-ups with alternating monolayers of WSe2 and SnS2, thus forming high-order SnS2/WSe2 vdW superlattices. The formation of these superlattices modulates the electronic band structure and the dimensionality, resulting in a transition of the transport characteristics from semiconducting to metallic, from 2D to one-dimensional (1D), with an angle-dependent linear magnetoresistance. This strategy can be extended to create diverse 2D/2D vdW superlattices, more complex 2D/2D/2D vdW superlattices, and beyond-2D materials, including three-dimensional (3D) thin-film materials and 1D nanowires, to generate mixed-dimensional vdW superlattices, such as 3D/2D, 3D/2D/2D, 1D/2D and 1D/3D/2D vdW superlattices. This study demonstrates a general approach to producing high-order vdW superlattices with widely variable material compositions, dimensions, chirality and topology, and defines a rich material platform for both fundamental studies and technological applications.
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Affiliation(s)
- Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zhong Wan
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, CA, USA
| | - Yuan Liu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.,School of Physics and Electronics, Hunan University, Changsha, China
| | - Junqing Xu
- Department of Chemistry and Biochemistry, University of California Santa Cruz, Santa Cruz, CA, USA
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Chunhao Guo
- Department of Chemistry and Biochemistry, University of California Santa Cruz, Santa Cruz, CA, USA
| | - Qi Qian
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, CA, USA.,Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA, USA
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, CA, USA
| | - Xingxu Yan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, USA
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Huifang Ma
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xiao Chen
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, China
| | - Yi Qiao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, China
| | - Imran Shakir
- Sustainable Energy Technologies Centre, College of Engineering, King Saud University, Riyadh, Saudi Arabia
| | - Zeyad Almutairi
- Sustainable Energy Technologies Centre, College of Engineering, King Saud University, Riyadh, Saudi Arabia.,Mechanical Engineering Department, College of Engineering, King Saud University, Riyadh, Saudi Arabia
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, China
| | - Yue Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, China.,Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, China
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California Irvine, Irvine, CA, USA.,Department of Physics and Astronomy, University of California Irvine, Irvine, CA, USA
| | - Yu Huang
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA, USA.,California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA
| | - Yuan Ping
- Department of Chemistry and Biochemistry, University of California Santa Cruz, Santa Cruz, CA, USA
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, CA, USA. .,California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA.
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30
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Tao L, Song Y, Liu J, Wang X, Liu Z, Huo M, Wang Y, Sui Y. Tailoring physical properties of WS 2 nanosheets by defects control. NANOTECHNOLOGY 2021; 32:035601. [PMID: 33089831 DOI: 10.1088/1361-6528/abb2c2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The controllable growth of high-quality transition metal dichalcogenides (TMDs) is crucial for their device applications, which rely on the atomic and quantitative understanding of the growth mechanism of TMDs. In this work, we propose a comprehensive picture of the growth of WS2 nanosheets via Monte Carlo simulation, and an extension of diffusion-limited growth under transition state theory is developed to describe heteroepitaxy growth of WS2. Theoretical results are in good agreement with the results of chemical vapor deposition that growth temperature dominates growth processes leading to samples with various densities of vacancy defects. The vacancy defects modify the photoluminescence and ferromagnetic behavior. Our work provides a pathway toward realizing controllable physical properties in 2D materials.
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Affiliation(s)
- Lei Tao
- School of Physic, Harbin Institute of Technology, Harbin 150001, People's Republic of China
- Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Yongli Song
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jian Liu
- Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Xianjie Wang
- School of Physic, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Zhiguo Liu
- School of Physic, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Mingxue Huo
- Space Environment Simulation Research Infrastructure, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Yang Wang
- Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Yu Sui
- School of Physic, Harbin Institute of Technology, Harbin 150001, People's Republic of China
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31
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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32
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Jiang X, Chen F, Zhao S, Su W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm 2021. [DOI: 10.1039/d1ce01289d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.
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Affiliation(s)
- Xia Jiang
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Shichao Zhao
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
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33
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Zhu J, Li W, Huang R, Ma L, Sun H, Choi JH, Zhang L, Cui Y, Zou G. One-Pot Selective Epitaxial Growth of Large WS 2/MoS 2 Lateral and Vertical Heterostructures. J Am Chem Soc 2020; 142:16276-16284. [PMID: 32847357 DOI: 10.1021/jacs.0c05691] [Citation(s) in RCA: 40] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Controllable nucleation sites play a key role in the selective growth of heterostructures. Here, we are the first to report a one-pot strategy to realize the confined and selective growth of large MoS2/WS2 lateral and vertical heterostructures. A hydroxide-assisted process is introduced to control the nucleation sites, thereby realizing the optional formation of lateral and vertical heterostructures. Time-of-flight secondary ion mass spectrometry verifies the critical role of hydroxide groups toward the controllable growth of these heterostructures. The size of the as-grown MoS2/WS2 lateral heterostructures can be as large as 1 mm, which is the largest lateral size reported thus far. The obtained MoS2/WS2 heterostructures have a high carrier mobility of ∼58 cm2 V-1 s-1, and the maximum on/off current ratio is >108. This approach provides not only a pathway for the selective growth of large MoS2/WS2 lateral and vertical heterostructures but also a fundamental understanding of surface chemistry for controlling the selective growth of transition-metal dichalcogenide heterostructures.
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Affiliation(s)
- Juntong Zhu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Wei Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Liang Ma
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Haiming Sun
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Jin-Ho Choi
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
| | - Liqiang Zhang
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Yi Cui
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123, China
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34
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Pan B, Zhang K, Ding C, Wu Z, Fan Q, Luo T, Zhang L, Zou C, Huang S. Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35337-35344. [PMID: 32648731 DOI: 10.1021/acsami.0c08335] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (TMDs) have been one of the hottest focus of materials due to the most beneficial electronic and optoelectronic properties. Up to now, one of the big challenges is the synthesis of large-area layer-number-controlled single-crystal films. However, the poor understanding of the growth mechanism seriously hampers the progress of the scalable production of TMDs with precisely tunable thickness at an atomic scale. Here, the growth mechanisms in the vertical direction were systemically studied based on the density functional theory (DFT) calculation and an advanced chemical vapor deposition (CVD) growth. As a result, the U-type relation of the TMD layer number to the ratio of metal/chalcogenide is confirmed by the capability of ultrafine tuning of the experimental conditions in the CVD growth. In addition, high-quality uniform monolayer, bilayer, trilayer, and multilayer TMDs in a large area (8 cm2) were efficiently synthesized by applying this modified CVD. Although bilayer TMDs can be obtained at both high and low ratios of metal/chalcogenide based on the suggested mechanism, they demonstrate significantly different optical and electronic transport properties. The modified CVD strategy and the proposed mechanism should be helpful for synthesizing and large-area thickness-controlled TMDs and understanding their growth mechanism and could be used in integrated electronics and optoelectronics.
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Affiliation(s)
- Baojun Pan
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Qunchao Fan
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Tingyan Luo
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Chao Zou
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shaoming Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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35
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Li L, Zheng W, Ma C, Zhao H, Jiang F, Ouyang Y, Zheng B, Fu X, Fan P, Zheng M, Li Y, Xiao Y, Cao W, Jiang Y, Zhu X, Zhuang X, Pan A. Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures. NANO LETTERS 2020; 20:3361-3368. [PMID: 32233493 DOI: 10.1021/acs.nanolett.0c00258] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe2 layer with a fixed band gap and another WS2(1-x)Se2x alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS2(1-x)Se2x alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.
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Affiliation(s)
- Lihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Hepeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Feng Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Ouyang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xianwei Fu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Peng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Min Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Wenpeng Cao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
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36
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Fang L, Yuan X, Liu K, Li L, Zhou P, Ma W, Huang H, He J, Tao S. Direct bilayer growth: a new growth principle for a novel WSe 2 homo-junction and bilayer WSe 2 growth. NANOSCALE 2020; 12:3715-3722. [PMID: 31993600 DOI: 10.1039/c9nr09874g] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Homo-junction and multi-layer structures of transition metal chalcogenide (TMD) materials provide great flexibility for band-structure engineering and designing photoelectric devices. However, the knowledge of van der Waals epitaxy growth limits the development of these heterostructures. Herein, we employed the chemical vapor deposition (CVD) growth strategy to synthesize novel WSe2 homo-junction samples with a triangular monolayer in the center and three AA stacking bilayer flakes connected to the vertexes of the monolayer. The emitted photon energy from the bilayer near the junction showed a blueshift in energy of up to 24 meV compared with bare bilayer WSe2, confirming the charge transfer effect from monolayer to bilayer WSe2. Further growth studies revealed the shape evolution from WSe2 homo-junction to bilayer. The whole homo-junction formation and evolution process cannot be explained by the traditional layer-by-layer growth mechanism. Instead, a direct bilayer growth approach is proposed to explain the bilayer formation and evolution at the vertexes of the bottom layer of WSe2. These findings suggest that the growth of bilayer TMDs is more complex than our previous understanding. This work presents deepens insight into van der Waals epitaxy growth, and thus is valuable for guiding the fabrication of novel homo-junctions for both fundamental science and optoelectronic applications.
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Affiliation(s)
- Long Fang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Kunwu Liu
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Lin Li
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Peng Zhou
- Hunan Provincial Key Defense Laboratory of High Temperature Wear-Resisting Materials and Preparation Technology, Hunan University of Science and Technology, Xiangtan, Hunan 411201, China
| | - Wei Ma
- Engineering Research Center of Advanced Functional Material Manufacturing of Ministry of Education, School of Chemical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Han Huang
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Jun He
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
| | - Shaohua Tao
- Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China.
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37
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Li Z, Xu B, Liang D, Pan A. Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:5464258. [PMID: 33029588 PMCID: PMC7521027 DOI: 10.34133/2020/5464258] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/26/2020] [Indexed: 01/12/2023]
Abstract
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
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Affiliation(s)
- Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
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Li N, Wang Q, Zhang H. 2D Materials in Light: Excited‐State Dynamics and Applications. CHEM REC 2019; 20:413-428. [DOI: 10.1002/tcr.201900050] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2019] [Revised: 09/06/2019] [Accepted: 09/13/2019] [Indexed: 11/09/2022]
Affiliation(s)
- Na Li
- State Key Laboratory of Applied Organic Chemistry (SKLAOC)Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu ProvinceCollege of Chemistry and Chemical EngineeringKey Laboratory of Special Function Materials and Structure DesignMinistry of EducationLanzhou University Lanzhou 730000 China
| | - Qiang Wang
- State Key Laboratory of Applied Organic Chemistry (SKLAOC)Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu ProvinceCollege of Chemistry and Chemical EngineeringKey Laboratory of Special Function Materials and Structure DesignMinistry of EducationLanzhou University Lanzhou 730000 China
| | - Hao‐Li Zhang
- State Key Laboratory of Applied Organic Chemistry (SKLAOC)Key Laboratory of Nonferrous Metal Chemistry and Resources Utilization of Gansu ProvinceCollege of Chemistry and Chemical EngineeringKey Laboratory of Special Function Materials and Structure DesignMinistry of EducationLanzhou University Lanzhou 730000 China
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Chen T, Ding D, Shi J, Wang G, Kou L, Zheng X, Ren X, Liu X, Jin C, Zhong J, Hao G. Lateral and Vertical MoSe 2-MoS 2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration. J Phys Chem Lett 2019; 10:5027-5035. [PMID: 31357864 DOI: 10.1021/acs.jpclett.9b01961] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atomically thin transition-metal dichalcogenide (TMDC) heterostructures have attracted increasing attention because of their unprecedented potential in the fields of electronics and optoelectronics. However, selective growth of either lateral or vertical TMDC heterostructures remains challenging. Here, we report that lateral and vertical MoS2/MoSe2 epitaxial heterostructures can be successfully fabricated via a one-step growth strategy, which includes triggering by the concentration of sulfur precursor vapor and a high-temperature annealing process. Vertically stacked MoS2/MoSe2 heterostructures can be synthesized via control of the nucleation and growth kinetics, which is induced by high sulfur vapor concentration. The high-temperature annealing process results in the formation of fractured MoSe2 and in situ epitaxial growth of lateral MoSe2-MoS2 heterostructures. This study has revealed the importance of sulfur vapor concentration and high-temperature annealing processes in the controllable growth of MoSe2-MoS2 heterostructures, paving a new route for fabricating two-dimensional TMDC heterostructures.
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Affiliation(s)
- Tao Chen
- School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, P.R. China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P.R. China
| | - Degong Ding
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China
| | - Jia Shi
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences 19 A Yuquan Rd, Shijingshan District, Beijing 100049, P.R. China
| | - Guang Wang
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, P.R. China
| | - Liangzhi Kou
- School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4001, Australia
| | - Xiaoming Zheng
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, P.R. China
| | - Xibiao Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China
| | - Xinfeng Liu
- Division of Nanophotonics, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Chuanhong Jin
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P.R. China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China
| | - Jianxin Zhong
- School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, P.R. China
| | - Guolin Hao
- School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, P.R. China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P.R. China
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