1
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Wang L, Zhang T, Zhang C, Zhang X, Kong L, Wang S, Zhang L, Liu C, Liu B, Li Y, Lin Q, Zhao Y, Zhang J, Yin W, Sun XW, Zhang X, Yang X. High-Voltage Stable Perovskite Light-Emitting Diodes Enabled by an Optoelectric-Tunable Sandwiched Nanostructure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:57457-57466. [PMID: 39390966 DOI: 10.1021/acsami.4c14525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/12/2024]
Abstract
While metal halide light-emitting diodes (PeLEDs) with unique optoelectronic properties are promising emitters for next-generation displays, their performance degrades rapidly due to severe ion migration during continuous operation, especially at high voltages. Here, we realize highly stable PeLEDs by designing inorganic dielectric/perovskite semiconductor emitter/organic dielectric sandwiched nanostructures to mitigate ion migration via regulating the electric field distribution. The bilateral cesium carbonate (Cs2CO3) and tetraoctylammonium bromide (TOAB) thin interlayers can not only largely reduce the voltage imposed on the perovskite layer by serving as series resistors and, thus, mitigate the ion migration but also regulate the charge carrier transfer to improve the radiative recombination efficiency. In addition, the underneath inorganic Cs2CO3 film also provides more heterogeneous nucleation sites for growing high-crystallinity perovskite crystals, while the atop TOAB with bifunctional groups (organic amino and Br- ions) refines the morphology and enhances the optical properties of the perovskite film. As a result, efficient and stable green PeLEDs based on such an optoelectric-tunable nanostructure exhibit extremely slow efficiency decay as the applied voltage increases, and the external quantum efficiencies were maintained over 10% at a high bias up to 20 V.
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Affiliation(s)
- Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Ting Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Chengxi Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Xiaofei Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
| | - Lingjiao Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong 510275, People's Republic of China
| | - Yanbo Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, People's Republic of China
| | - Qianqian Lin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Yongbiao Zhao
- Department of Physics, Center for Optoelectronics Engineering Research, Yunnan University, Kunming, Yunnan 650091, People's Republic of China
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials of MOE, School of Materials Science and Engineering, Jilin University, Changchun, Jilin 130012, People's Republic of China
| | - Wenxu Yin
- Key Laboratory of Automobile Materials of MOE, School of Materials Science and Engineering, Jilin University, Changchun, Jilin 130012, People's Republic of China
| | - Xiao Wei Sun
- Institute of Nanoscience and Applications and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials of MOE, School of Materials Science and Engineering, Jilin University, Changchun, Jilin 130012, People's Republic of China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China
- Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 201899, People's Republic of China
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2
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Sheng M, Wang S, Zhu H, Liu Z, Zhou G. Computational applications for the discovery of novel antiperovskites and chalcogenide perovskites: a review. Front Chem 2024; 12:1468434. [PMID: 39464385 PMCID: PMC11502337 DOI: 10.3389/fchem.2024.1468434] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2024] [Accepted: 09/30/2024] [Indexed: 10/29/2024] Open
Abstract
Novel perovskites pertain to newly discovered or less studied variants of the conventional perovskite structure, characterized by distinctive properties and potential for diverse applications such as ferroelectric, optoelectronic, and thermoelectric uses. In recent years, advancements in computational methods have markedly expedited the discovery and design of innovative perovskite materials, leading to numerous pertinent reports. However, there are few reviews that thoroughly elaborate the role of computational methods in studying novel perovskites, particularly for state-of-the-art perovskite categories. This review delves into the computational discovery of novel perovskite materials, with a particular focus on antiperovskites and chalcogenide perovskites. We begin with a discussion on the computational methods applied to evaluate the stability and electronic structure of materials. Next, we highlight how these methods expedite the discovery process, demonstrating how rational simulations contribute to researching novel perovskites with improved performance. Finally, we thoroughly discuss the remaining challenges and future outlooks in this research domain to encourage further investigation. We believe that this review will be highly beneficial both for newcomers to the field and for experienced researchers in computational science who are shifting their focus to novel perovskites.
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Affiliation(s)
- Ming Sheng
- College of Engineering, Shandong Xiehe University, Jinan, China
| | - Suqin Wang
- College of Engineering, Shandong Xiehe University, Jinan, China
| | - Hui Zhu
- College of Engineering, Shandong Xiehe University, Jinan, China
| | - Zhuang Liu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan, China
| | - Guangtao Zhou
- College of Engineering, Shandong Xiehe University, Jinan, China
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3
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Liu C, Chen F, Zhang Y, Wang R, Xu W, Huang Q, Zhao Q, Sun H, Zhang W, Ding J. Ultrafast Response and Broad Detection Range of a Ternary Cation Perovskite Single-Crystal Thin Film Photodetector for Imaging. ACS APPLIED MATERIALS & INTERFACES 2024; 16:51020-51027. [PMID: 39264821 DOI: 10.1021/acsami.4c07292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/14/2024]
Abstract
FA-MA-Cs ternary cation perovskite exhibits excellent optoelectronic properties and high stabilities against humidity and light soaking and thus has aroused extensive attention in polycrystalline thin film solar cells. Compared with polycrystalline counterparts, FA-MA-Cs ternary cation perovskite single-crystal thin films (SCTFs) have lower defects, better carrier transport capacity, and stability because of lacking grain boundary defects. However, the immature growth technology of SCTFs restricts digging out its optoelectronic potential. Here, we proposed an improved space-confined method to grow large area FA0.9 MA0.05Cs0.05PbI2.7Br0.3 SCTFs using a tunable heating area to control the nucleation and growth process. Its area reaches 64 mm2 with a thickness of 26 μm. The SCTF exhibits high crystallinity, low defect density, long carrier lifetime, and high moisture resistance stability. Besides, a photosensitive chip based on a planar metal-semiconductor-metal photodetector demonstrates linear response to the three primary colors, with a photosensitive range that is 1.5 times that of protocol 3 wide color gamut. Under high-frequency light sources, the on/off ratio reaches 3.9 × 103, and the response time can be as low as 400 ns. Such ultrafast response speed and broad photosensitive range are successfully achieved for imaging applications.
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Affiliation(s)
- Chenyang Liu
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Feitong Chen
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Yingzhao Zhang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Rui Wang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Wenli Xu
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Qi Huang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Qiqi Zhao
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Haiqing Sun
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Weiwei Zhang
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
| | - Jianxu Ding
- College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, P. R. China
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4
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Mizoguchi S, Sumikoshi S, Abe H, Ito Y, Yamakado R, Chiba T. Aromatic 2,2-Diphenylethylamine Ligand Exchange of FA 0.9Cs 0.1PbBr 3 Perovskite Nanocrystals for High-Efficiency Pure Green Light-Emitting Diodes. ACS OMEGA 2024; 9:34692-34699. [PMID: 39157149 PMCID: PMC11325396 DOI: 10.1021/acsomega.4c03488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 07/07/2024] [Accepted: 07/10/2024] [Indexed: 08/20/2024]
Abstract
Perovskite nanocrystals (NCs) with long alkyl ligands cannot easily form high-quality composite films owing to their poor dispersibility in π-conjugated small molecules and polymer host materials. In this study, we demonstrated that the aromatic ligand exchange of mixed-cation FA0.9Cs0.1PbBr3 NCs using 2,2-diphenylethylamine (DPEA) can not only enable the fabrication of high-efficiency light-emitting diodes (LEDs) but also allows dispersibility in host materials. The DPEA-NC film exhibited a pure green wavelength of 530 nm and a full width at half-maximum of 20.9 nm with a photoluminescence quantum yield of 90.9%. A DPEA-NC LED achieved a luminance of 39,700 cd/m2 and an external quantum efficiency of 18.6% even in a thick NC film. Interestingly, the DPEA-NCs formed a composite film with small-molecule tris(4-carbazoyl-9-ylphenyl)amine. The operational stability of this composite LED was eight times higher than that of the DPEA-NC LED owing to enhanced hole-electron charge balance and the suppression of perovskite NC degradation. Therefore, the aromatic DPEA ligand exchange of perovskite NCs is an effective way to improve their electrical properties and operational device stabilities.
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Affiliation(s)
- Shoki Mizoguchi
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Shunsuke Sumikoshi
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Haruka Abe
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Yuta Ito
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Ryohei Yamakado
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
| | - Takayuki Chiba
- Graduate School of Organic
Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
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5
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Dey K, Ghosh D, Pilot M, Pering SR, Roose B, Deswal P, Senanayak SP, Cameron PJ, Islam MS, Stranks SD. Substitution of lead with tin suppresses ionic transport in halide perovskite optoelectronics. ENERGY & ENVIRONMENTAL SCIENCE 2024; 17:760-769. [PMID: 38269299 PMCID: PMC10805128 DOI: 10.1039/d3ee03772j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Accepted: 11/23/2023] [Indexed: 01/26/2024]
Abstract
Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles' heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.
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Affiliation(s)
- Krishanu Dey
- Cavendish Laboratory, University of Cambridge Cambridge UK
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering and Department of Chemistry, Indian Institute of Technology Delhi Hauz Khas India
| | | | - Samuel R Pering
- Department of Materials, Loughborough University Loughborough UK
| | - Bart Roose
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
| | - Priyanka Deswal
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas India
| | - Satyaprasad P Senanayak
- Nanoelectronics and Device Physics Lab,School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni India
| | | | | | - Samuel D Stranks
- Cavendish Laboratory, University of Cambridge Cambridge UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
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6
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Zhao YY, Sheng SY. The electronic and optical properties of Cs2BX6 (B = Zr, Hf) perovskites with first-principle method. PLoS One 2023; 18:e0292399. [PMID: 38134027 PMCID: PMC10745151 DOI: 10.1371/journal.pone.0292399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Accepted: 09/19/2023] [Indexed: 12/24/2023] Open
Abstract
The electronic structures and absorption properties of Cs2BX6 halide compounds are investigated with first principle calculation and exchange correlation functional of GGA-PBE. Pressure and halogen ion doping are employed to regulate band gap. All materials suffer transition from indirect to direct band gap semiconductors but with different phase transition pressure. Structural and band structure calculating results show that the value of phase transition pressure is mainly determined by the volume of octahedron. When the volume of vacancy octahedron is much less than B-ion octahedron, the lowest band point of B-d orbitals transforms to Γ point, then the indirect semiconductors transform into direct band gap semiconductors. Calculating results of optical absorption implied that the systems have obvious blue shift, which result in the optical properties reduced. Based on suitable band gap and higher absorption coefficient, Cs2ZrI4Br2 can be an ideal candidate for perovskites solar cells.
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Affiliation(s)
- Yang-Yang Zhao
- Department of basic education, Criminal Investigation Police University of China, Shenyang, Liaoning, China
| | - Si-Yuan Sheng
- Department of Physics, Shenyang University of Chemical Technology, Shenyang, Liaoning, China
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7
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Kim S, Lee JH, Park JS, Kim GY, Kang M, Jo SB, Myoung JM, Lee JW, Cho JH. Enhancing Efficiency and Stability of Tin Halide Perovskite Light-Emitting Diodes via Engineered Alkali/Multivalent Metal Salts. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38031845 DOI: 10.1021/acsami.3c12987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Sn-based perovskite light-emitting diodes (PeLEDs) have emerged as promising alternatives to Pb-based PeLEDs with their rapid increase in performance owing to the various research studies on inhibiting Sn oxidation. However, the absence of defect passivation strategies for Sn-based perovskite LEDs necessitates further research in this field. We performed systematic studies to investigate the design rules for defect passivation agents for Sn-based perovskites by incorporating alkali/multivalent metal salts with various cations and anions. From the computational and experimental analyses, sodium trifluoromethanesulfonate (NaTFMS) was found to be the most effective passivation agent for PEA2SnI4 films among the explored candidate agents owing to favorable reaction energetics to passivate iodide Frenkel defects. Consequently, the incorporation of NaTFMS facilitates the formation of uniform films with relatively large crystals and reduced Sn4+. The NaTFMS-containing PEA2SnI4 PeLEDs demonstrate an improved luminance of 138.9 cd/m2 and external quantum efficiency (EQE) of 0.39% with an improved half-lifetime of more than threefold. This work provides important insight into the design of defect passivation agents for Sn-based perovskites.
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Affiliation(s)
- Seonkwon Kim
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Joo-Hong Lee
- Department of Nano Engineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ji-Sang Park
- Department of Nano Engineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ga-Yeong Kim
- Department of Nano Engineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Minsu Kang
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sae Byeok Jo
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Min Myoung
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jin-Wook Lee
- Department of Nano Engineering and Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science & Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
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8
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Karlsson M, Qin J, Niu K, Luo X, Rosen J, Björk J, Duan L, Xu W, Gao F. Role of chloride on the instability of blue emitting mixed-halide perovskites. FRONTIERS OF OPTOELECTRONICS 2023; 16:37. [PMID: 37975944 PMCID: PMC10656409 DOI: 10.1007/s12200-023-00088-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Accepted: 10/06/2023] [Indexed: 11/19/2023]
Abstract
Although perovskite light-emitting diodes (PeLEDs) have seen unprecedented development in device efficiency over the past decade, they suffer significantly from poor operational stability. This is especially true for blue PeLEDs, whose operational lifetime remains orders of magnitude behind their green and red counterparts. Here, we systematically investigate this efficiency-stability discrepancy in a series of green- to blue-emitting PeLEDs based on mixed Br/Cl-perovskites. We find that chloride incorporation, while having only a limited impact on efficiency, detrimentally affects device stability even in small amounts. Device lifetime drops exponentially with increasing Cl-content, accompanied by an increased rate of change in electrical properties during operation. We ascribe this phenomenon to an increased mobility of halogen ions in the mixed-halide lattice due to an increased chemically and structurally disordered landscape with reduced migration barriers. Our results indicate that the stability enhancement for PeLEDs might require different strategies from those used for improving efficiency.
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Affiliation(s)
- Max Karlsson
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Jiajun Qin
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Kaifeng Niu
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Xiyu Luo
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Johanna Rosen
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Jonas Björk
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden
| | - Lian Duan
- Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Weidong Xu
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, China.
| | - Feng Gao
- Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.
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9
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Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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10
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Gao L, Cheng T, Gou L, Zhang Y, Liu Y, Yuan L, Zhang X, Wang Y, Meng F, Zhang J. Eliminating Nanocrystal Surface Light Loss and Ion Migration to Achieve Bright Mixed-Halide Blue Perovskite LEDs. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18125-18133. [PMID: 37000642 DOI: 10.1021/acsami.3c02437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Blue light-emittin g diodes (LEDs) are important components for perovskite electroluminescence applications, which still suffer from insufficient luminescence efficiency and poor stability. In Cl/Br mixed perovskite NCs, surficial defects cause severe light failure and ion migration, the in-depth mechanism of which is also not clear. To gain insights into these issues, we employ the ligand post-addition approach for mixed Cl/Br NCs by using octylammonium hydrobromide (OctBr) ligands, which effectively decrease surficial light loss and block ion migration pathways. The passivated CsPbCl1.5Br1.5 NCs exhibit exceptional blue emission with 95% PLQY, and the electroluminescence spectra of LEDs are located at the initial positions at the initial states. The treated NC blue devices show a negligible color shift as the voltage increases, which proves that electric-field-driven ion migration is drastically suppressed. In addition, OctBr-treated CsPbCl1.5Br1.5 and CsPbClBr2 NC LEDs show high external quantum efficiencies of 2.42 and 3.05% for emission peaks at 456 and 480 nm, respectively. Our work identified the nature of NC surface defects and provided a surficial modification approach to develop high-performance and color-stable blue mixed-halide perovskite LEDs.
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Affiliation(s)
- Long Gao
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Tuo Cheng
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Lijie Gou
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Yilin Zhang
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Yuping Liu
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Long Yuan
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Xiaoyu Zhang
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
| | - Yinghui Wang
- College of Physics, Jilin University, Changchun 130012, China
| | - Fanxu Meng
- Center of Characterization and Analysis, Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Jiaqi Zhang
- College of Materials Science and Engineering, Key Laboratory of Automobile Materials, Ministry of Education, Jilin University, Changchun 130012, China
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11
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Kong L, Zhang X, Zhang C, Wang L, Wang S, Cao F, Zhao D, Rogach AL, Yang X. Stability of Perovskite Light-Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2205217. [PMID: 35921550 DOI: 10.1002/adma.202205217] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 07/12/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.
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Affiliation(s)
- Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Xiaoyu Zhang
- College of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chengxi Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
| | - Dewei Zhao
- College of Materials Science and Engineering, Engineering Research Center of Alternative Energy Materials & Devices (MoE), Sichuan University, Chengdu, 610065, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, P. R. China
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12
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Gao Y, Su X, Wei J, Sun J, Zhang M, Tan H, Zhang J, Ouyang J, Na N. Water-resistant organic-inorganic hybrid perovskite quantum dots activated by the electron-deficient d-orbital of platinum atoms for nitrogen fixation. NANOSCALE 2022; 14:10780-10792. [PMID: 35861174 DOI: 10.1039/d2nr02662g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their special physicochemical properties, organic-inorganic hybrid perovskite quantum dots (OIP QDs) are ideal and potential catalysts for the nitrogen reduction reaction (NRR). However, the OIP QD-based NRR is limited by poor water resistance, competitive suppression by the hydrogen evolution reaction, and inefficient active sites on the catalyst surfaces. Herein, to ensure an efficient NRR in aqueous solution, a water-resistant polycarbonate-part-encapsulated heterojunction of Zn,PtIV co-doped PbO-MAPbBr3 (PtIV/Zn/PbO/PC-Zn/MAPbBr3) is prepared through one-step electrospray-based microdroplet synthesis. Confirmed by both experimental and theoretical examinations, PbO is exposed on the PC-part-encapsulated surface to construct a Type I heterojunction. This heterojunction is further improved by synergistic co-doping with PtIV to facilitate efficient electron transfer for efficient photocatalysis of the NRR. Due to the active sites of the d-orbital electron-deficient Pt atoms (exhibiting a lower reaction energy barrier and highly selective N2 adsorption), the ammonia yield rate is 40 times higher than that without doping. This work initiates and develops on the application of OIP QDs in the NRR.
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Affiliation(s)
- Yixuan Gao
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Xiao Su
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Juanjuan Wei
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Jianghui Sun
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Min Zhang
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Hongwei Tan
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Jiangwei Zhang
- Dalian National Laboratory for Clean Energy & State, Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences (CAS), China.
| | - Jin Ouyang
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
| | - Na Na
- Key Laboratory of Radiopharmaceuticals, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China.
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13
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Cai W, Ali MU, Liu P, He M, Zhao C, Chen Z, Zang Y, Tang M, Meng H, Fu H, Wei G, Yip H. Unravelling Alkali-Metal-Assisted Domain Distribution of Quasi-2D Perovskites for Cascade Energy Transfer toward Efficient Blue Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200393. [PMID: 35561063 PMCID: PMC9284168 DOI: 10.1002/advs.202200393] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 04/07/2022] [Indexed: 06/15/2023]
Abstract
Solution processable quasi-2D (Q-2D) perovskite materials are emerging as a promising candidate for blue light source in full-color display applications due to their good color saturation property, high brightness, and spectral tunability. Herein, an efficient energy cascade channel is developed by introducing sodium bromide (NaBr) in phenyl-butylammonium (PBA)-containing mixed-halide Q-2D perovskites for a blue perovskite light-emitting diode (PeLED). The incorporation of alkali metal contributes to the nucleation and growth of Q-2D perovskites into graded distribution of domains with different layer number <n>. The study of excitation dynamics by transient absorption (TA) spectroscopy confirms that NaBr induces more Q-2D perovskite phases with small n number, providing a graded energy cascade pathway to facilitate more efficient energy transfer processes. In addition, the nonradiative recombination within the Q-2D perovskites is significantly suppressed upon Na+ incorporation, as validated by the trap density estimation. Consequently, the optimized blue PeLEDs manifest a peak external quantum efficiency (EQE) of 7.0% emitting at 486 nm with a maximum luminance of 1699 cd m-2 . It is anticipated that these findings will improve the understanding of alkali-metal-assisted optimization of Q-2D perovskites and pave the way toward high-performance blue PeLEDs.
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Affiliation(s)
- Wanqing Cai
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Muhammad Umair Ali
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Ping Liu
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Miao He
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Cong Zhao
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Ziming Chen
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
| | - Yue Zang
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
| | - Man‐Chung Tang
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Hong Meng
- School of Advanced MaterialsPeking University Shenzhen Graduate SchoolShenzhen City518055P. R. China
| | - Hongyan Fu
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Guodan Wei
- Tsinghua‐Berkeley Shenzhen Institute (TBSI)Tsinghua UniversityShenzhen518055China
- Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen City518055China
| | - Hin‐Lap Yip
- State Key Laboratory of Luminescent Materials and DevicesInstitute of Polymer Optoelectronic Materials and DevicesSchool of Materials Science and EngineeringSouth China University of Technology381 Wushan RoadGuangzhou510640P. R. China
- Department of Materials Science and EngineeringCity University of Hong KongKowloon999077Hong Kong
- School of Energy and EnvironmentCity University of Hong KongKowloon999077Hong Kong
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14
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Fu C, Gu Z, Tang Y, Xiao Q, Zhang S, Zhang Y, Song Y. From Structural Design to Functional Construction: Amine Molecules in High-Performance Formamidinium-Based Perovskite Solar Cells. Angew Chem Int Ed Engl 2022; 61:e202117067. [PMID: 35148011 DOI: 10.1002/anie.202117067] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Indexed: 11/11/2022]
Abstract
Formamidinium (FA) based perovskites are considered as one of the most promising light-absorbing perovskite materials owing to their narrower band gap and better thermal stability compared to conventional methylammonium-based perovskites. Constant improvement by using various additives stimulates the potential application of these perovskites. Amine molecules with different structures have been widely used as typical additives in FA-based perovskite solar cells, and decent performances have been achieved. Thus, a systematic review focusing on structural regulation and functional construction of amines in FA-based perovskites is of significance. Herein, we analyze the construction mechanism of different structural amines on the functional perovskite crystals. The influence of amine molecules on specific perovskite properties including defect conditions, charge transfer, and moisture resistance are evaluated. Finally, we summarize the design rules of amine molecules for the application in high-performance FA-based perovskites and propose directions for the future development of additive molecules.
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Affiliation(s)
- Chunpeng Fu
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Zhenkun Gu
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Yan Tang
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Qian Xiao
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Shasha Zhang
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Yiqiang Zhang
- Henan Institute of Advanced Technology, College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P.R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences (ICCAS), Beijing Engineering Research Center of Nanomaterials for Green Printing Technology, National Laboratory for Molecular Sciences (BNLMS), Beijing, 100190, P. R. China
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15
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Li N, Jia Y, Guo Y, Zhao N. Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108102. [PMID: 34847262 DOI: 10.1002/adma.202108102] [Citation(s) in RCA: 48] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Revised: 11/26/2021] [Indexed: 06/13/2023]
Abstract
In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.
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Affiliation(s)
- Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
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16
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Fakharuddin A, Gangishetty MK, Abdi-Jalebi M, Chin SH, bin Mohd Yusoff AR, Congreve DN, Tress W, Deschler F, Vasilopoulou M, Bolink HJ. Perovskite light-emitting diodes. NATURE ELECTRONICS 2022; 5:203-216. [DOI: 10.1038/s41928-022-00745-7] [Citation(s) in RCA: 54] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2020] [Accepted: 03/02/2022] [Indexed: 09/02/2023]
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17
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Fu C, Gu Z, Tang Y, Xiao Q, Zhang S, Zhang Y, Song Y. From Structural Design to Functional Construction: Amine Molecules in High‐Performance FA‐Based Perovskite Solar Cells. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202117067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Chunpeng Fu
- Zhengzhou University Henan Institute of Advanced Technology Zhengzhou university, Henan province 450000 Zhengzhou CHINA
| | - Zhenkun Gu
- Zhengzhou University Henan Institute of Advanced Technology CHINA
| | - Yan Tang
- Zhengzhou University Henan Institute of Advanced Technology CHINA
| | - Qian Xiao
- Zhengzhou University Henan Institute of Advanced Technology CHINA
| | - Shasha Zhang
- Zhengzhou University Henan Institute of Advanced Technology CHINA
| | | | - Yanlin Song
- CAS Institute of Chemistry: Institute of Chemistry Chinese Academy of Sciences Green Printing Laboratory No.2,1st North Street,Zhongguancun 100190 Beijing CHINA
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18
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Zhang W, Ono LK, Xue J, Qi Y. Atomic Level Insights into Metal Halide Perovskite Materials by Scanning Tunneling Microscopy and Spectroscopy. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202112352] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Wei Zhang
- Energy Materials and Surface Sciences Unit (EMSSU) Okinawa Institute of Science and Technology Graduate University (OIST) 1919-1 Tancha, Onna-son Kunigami-gun Okinawa 904-0495 Japan
| | - Luis K. Ono
- Energy Materials and Surface Sciences Unit (EMSSU) Okinawa Institute of Science and Technology Graduate University (OIST) 1919-1 Tancha, Onna-son Kunigami-gun Okinawa 904-0495 Japan
| | - Jiamin Xue
- School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU) Okinawa Institute of Science and Technology Graduate University (OIST) 1919-1 Tancha, Onna-son Kunigami-gun Okinawa 904-0495 Japan
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19
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Zeng J, Qi Y, Liu Y, Chen D, Ye Z, Jin Y. ZnO-Based Electron-Transporting Layers for Perovskite Light-Emitting Diodes: Controlling the Interfacial Reactions. J Phys Chem Lett 2022; 13:694-703. [PMID: 35023745 DOI: 10.1021/acs.jpclett.1c04117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide new opportunities for cost-effective and large-area electroluminescent devices. It is of interest to use ZnO-based electron-transport layers (ETLs), which demonstrate superior performance in other solution-processed LEDs, in PeLEDs. However, the notorious deprotonation reaction between ZnO and perovskite casts doubt on the long-term stability of PeLEDs with ZnO-based ETLs. This Perspective presents an overview of the chemical reactions that may occur at the interfaces between perovskite and ZnO-based ETLs. We highlight that other interfacial reactions during the fabrication of PeLEDs, including the reactions between ZnO and the intermediate phase during perovskite crystallization and the amidation reactions catalyzed by ZnO, demonstrate critical utilities in the fabrication of high-efficiency and stable PeLEDs. Considering these recent advances, we propose future directions and prospects to design and control the interfacial reactions, aiming to fully exploit the potential of ZnO-based ETLs for realizing high-performance PeLEDs.
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Affiliation(s)
- Jiejun Zeng
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yuhui Qi
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Yang Liu
- State Key Laboratory of Silicon Materials, School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Desui Chen
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Yizheng Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, China
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20
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Zhou Z, Ju MG, Wang J. Rational Unraveling of Alkali Metal Concentration-Dependent Photovoltaic Performance of Halide Perovskites: Octahedron Distortion vs Surface Reconstruction. J Phys Chem Lett 2022; 13:362-370. [PMID: 34985292 DOI: 10.1021/acs.jpclett.1c03586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Adding alkali metal in organic-inorganic halide perovskites effectively improves its photovoltaic performance, while excessive alkali metal incorporation would produce a detrimental effect. Through density functional theory and nonadiabatic molecular dynamics simulations, we demonstrate how and why the photogenerated carrier lifetime mutates with the increase of alkali metal concentration. A small amount of Rb doping in the lattice introduces a slight distortion of the octahedron, reducing the overlap of frontier orbitals and decreasing the nonadiabatic coupling, effectively enhancing the photogenerated carrier lifetime. In contrast, excessive Rb will introduce defect states, resulting in the low carrier lifetime by a factor of 2-3 orders of magnitude. Strikingly, the surface formamidinium (FA) cations exhibit unexpected responsibility for the carrier dynamics since its high-frequency thermal vibration strongly leads to the ultrafast hole trapping and carrier recombination. Our results provide new insight into the concentration-dependent photovoltaic performance of alkali metal cations in organic-inorganic halide perovskites.
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Affiliation(s)
- Zhaobo Zhou
- School of Physics, Southeast University, Nanjing 211189, Jiangsu, China
| | - Ming-Gang Ju
- School of Physics, Southeast University, Nanjing 211189, Jiangsu, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, Jiangsu, China
- Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, Hunan, China
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21
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Zhang W, Ono LK, Xue J, Qi Y. Atomic Level Insights into Metal Halide Perovskite Materials by Scanning Tunneling Microscopy and Spectroscopy. Angew Chem Int Ed Engl 2021; 61:e202112352. [PMID: 34647403 DOI: 10.1002/anie.202112352] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Indexed: 11/07/2022]
Abstract
Metal halide perovskite materials (MHPMs) have attracted significant attention because of their superior optoelectronic properties and versatile applications. The power conversion efficiency of MHPM solar cells (PSCs) has skyrocketed to 25.5 %. Although the performance of PSCs is already competitive, several important challenges still need to be solved to realize commercial applications. A thorough understanding of surface atomic structures and structure-property relationships is at the heart of these remaining issues. Scanning tunneling microscopy (STM) and spectroscopy (STS) can be used to characterize the surface properties of MHPMs, which can offer crucial insights into MHPMs at the atomic scale. This Review summarizes recent progress in STM and STS studies on MHPMs, with a focus on the surface properties. We provide understanding from the comparative perspective of several different MHPMs. We also highlight a series of novel phenomena observed by STM and STS. Finally, we outline a few research topics of primary importance for future studies.
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Affiliation(s)
- Wei Zhang
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Luis K Ono
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
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22
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Guo Z, Zhang Y, Wang B, Wang L, Zhou N, Qiu Z, Li N, Chen Y, Zhu C, Xie H, Song T, Song L, Xue H, Tao S, Chen Q, Xing G, Xiao L, Liu Z, Zhou H. Promoting Energy Transfer via Manipulation of Crystallization Kinetics of Quasi-2D Perovskites for Efficient Green Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102246. [PMID: 34396606 DOI: 10.1002/adma.202102246] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Revised: 06/21/2021] [Indexed: 06/13/2023]
Abstract
Quasi-2D (Q-2D) perovskites are promising materials applied in light-emitting diodes (LEDs) due to their high exciton binding energy and quantum confinement effects. However, Q-2D perovskites feature a multiphase structure with abundant grain boundaries and interfaces, leading to nonradiative loss during the energy-transfer process. Here, a more efficient energy transfer in Q-2D perovskites is achieved by manipulating the crystallization kinetics of different-n phases. A series of alkali-metal bromides is utilized to manipulate the nucleation and growth of Q-2D perovskites, which is likely associated with the Coulomb interaction between alkali-metal ions and the negatively charged PbBr6 4- frames. The incorporation of K+ is found to restrict the nucleation of high-n phases and allows the subsequent growth of low-n phases, contributing to a spatially more homogeneous distribution of different-n phases and promoted energy transfer. As a result, highly efficient green Q-2D perovskites LEDs with a champion EQE of 18.15% and a maximum brightness of 25 800 cd m-2 are achieved. The findings affirm a novel method to optimize the performance of Q-2D perovskite LEDs.
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Affiliation(s)
- Zhenyu Guo
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Yu Zhang
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Bingzhe Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Liding Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, Beijing Engineering Technology Research Centre of Active Display, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Ning Zhou
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Zhiwen Qiu
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Nengxu Li
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Yihua Chen
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Cheng Zhu
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Haipeng Xie
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Tinglu Song
- Experimental Center of Advanced Materials, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Lei Song
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
| | - Haibo Xue
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
| | - Shuxia Tao
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, MB, 5600, the Netherlands
| | - Qi Chen
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, China
| | - Lixin Xiao
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, China
| | - Zhiwei Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory of Rare Earth Materials Chemistry and Applications, Beijing Engineering Technology Research Centre of Active Display, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Huanping Zhou
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, School of Materials Science and Engineering, Peking University, Beijing, 100871, China
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23
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Sun S, Si J, Gao Y, Xu R, Du Y, Zhang T, Li H, Yao X, Ai Q, Cai P, Cai M, Tang Y, Rabchinskii M, Brunkov P, Ye Z, Dai X, Liu Z. Decoupling the Positive and Negative Aging Processes of Perovskite Light-Emitting Diodes Using a Thin Interlayer of Ionic Liquid. J Phys Chem Lett 2021; 12:7783-7791. [PMID: 34374551 DOI: 10.1021/acs.jpclett.1c02024] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A positive aging phenomenon, that is, enhancement of the electroluminescence performance at the beginning of electrical aging, is commonly observed for the state-of-the-art perovskite light-emitting diodes (PeLEDs). The origins of positive aging could fundamentally interfere with those of the operational deterioration processes of PeLEDs (namely negative aging), bringing difficulty in analyzing the degradation mechanisms. This work decouples the positive and negative aging processes of PeLEDs by inserting a thin ionic liquid interlayer between the hole-injection layer and the perovskite layer. This interlayer inhibits ions migration by passivating the halogen vacancies of perovskite films and suppresses interfacial exciton quenching, enabling us to decouple the positive and negative aging processes of PeLEDs while increasing the device efficiency. Inserting an ionic liquid interlayer is also demonstrated to be effective for iodide-based PeLEDs and applicable with the use of other ionic liquids. Our work provides an ideal system for fundamental studies on the degradation mechanisms of PeLEDs.
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Affiliation(s)
- Shuo Sun
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Junjie Si
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Yun Gao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Rui Xu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Yihang Du
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Taotao Zhang
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Hongjin Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Xin Yao
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Qi Ai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Peiqing Cai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Muzhi Cai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Ying Tang
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
| | - Maxim Rabchinskii
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg, 194021, Russian Federation
| | - Pavel Brunkov
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg, 194021, Russian Federation
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Xingliang Dai
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Zugang Liu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China
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24
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Jia Y, Yu H, Zhou Y, Li N, Guo Y, Xie F, Qin Z, Lu X, Zhao N. Excess Ion-Induced Efficiency Roll-Off in High-Efficiency Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28546-28554. [PMID: 34110767 DOI: 10.1021/acsami.1c05458] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Applying extensively excess ammonium halides in forming perovskites is a widely used approach to achieve high-performance perovskite light-emitting diodes (PeLEDs). However, most of these PeLEDs suffer from severe external quantum efficiency (EQE) roll-off at high current densities, thereby restricting the realization of high-brightness PeLEDs and laser diodes. In this work, we explore the underlying mechanism of the EQE roll-off in high-efficiency formamidinium lead iodide (FAPbI3)-based PeLEDs. By combining voltage-dependent electrical stress measurements and ex situ ion distribution analysis of PeLEDs, we found that the electric field-driven migration and local segregation of excess iodide ions, originated from nonstoichiometric precursors, trigger the EQE roll-off via promoting imbalanced charge injection. Based on this discovery, we introduced a simple wash-off treatment with chloroform to remove the excess iodides from the perovskite surface and demonstrated that the treatment is highly effective in suppressing the roll-off behavior. By combining the treatment and the use of an ultrathin poly(methyl methacrylate) (PMMA) interlayer, we achieved a high-brightness PeLED with an EQEmax of 19.6%, a critical current density of 1550 mA cm-2, and a radiancemax of 875 W sr-1 m-2. The study reveals the double-edge sword effect of precursor nonstoichiometry and highlights the importance of managing excess ions in perovskite films.
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Affiliation(s)
- Yongheng Jia
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Hui Yu
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yang Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Fangyan Xie
- Instrumental Analysis and Research Center Sun Yat-sen University, Guangzhou 510275, China
| | - Zhaotong Qin
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong
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25
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Zhang H, Tu C, Xue C, Wu J, Cao Y, Zou W, Xu W, Wen K, Zhang J, Chen Y, Lai J, Zhu L, Pan K, Xu L, Wei Y, Lin H, Wang N, Huang W, Wang J. Low Roll-Off and High Stable Electroluminescence in Three-Dimensional FAPbI 3 Perovskites with Bifunctional-Molecule Additives. NANO LETTERS 2021; 21:3738-3744. [PMID: 33908790 DOI: 10.1021/acs.nanolett.0c04900] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Three-dimensional (3D) perovskites have been demonstrated as an effective strategy to achieve efficient light-emitting diodes (LEDs) at high brightness. However, most 3D perovskite LEDs still suffer from serious efficiency roll-off. Here, using FAPbI3 as a model system, we find that the main reason for efficiency droop and degradation in 3D perovskite LEDs is defects and the ion migration under electrical stress. By introducing bifunctional-molecule 3-chlorobenzylamine additive into the perovskite precursor solution, the detrimental effects can be significantly suppressed through the growth of high crystalline perovskites and defect passivation. This approach leads to bright near-infrared perovskite LEDs with a peak external quantum efficiency of 16.6%, which sustains 80% of its peak value at a high current density of 460 mA cm-2, corresponding to a high brightness of 300 W sr-1 m-2. Moreover, the device exhibits a record half-lifetime of 49 h under a constant current density of 100 mA cm-2.
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Affiliation(s)
- Hao Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Cailing Tu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chen Xue
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Jianhong Wu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yu Cao
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Wei Zou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wenjie Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Ju Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Jingya Lai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Kang Pan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yingqiang Wei
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hongzhen Lin
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, 398 Ruoshui Road, SEID, SIP, Suzhou 215123, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
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26
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Guo Y, Apergi S, Li N, Chen M, Yin C, Yuan Z, Gao F, Xie F, Brocks G, Tao S, Zhao N. Phenylalkylammonium passivation enables perovskite light emitting diodes with record high-radiance operational lifetime: the chain length matters. Nat Commun 2021; 12:644. [PMID: 33510190 PMCID: PMC7843623 DOI: 10.1038/s41467-021-20970-6] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2020] [Accepted: 01/04/2021] [Indexed: 01/30/2023] Open
Abstract
Perovskite light emitting diodes suffer from poor operational stability, exhibiting a rapid decay of external quantum efficiency within minutes to hours after turn-on. To address this issue, we explore surface treatment of perovskite films with phenylalkylammonium iodide molecules of varying alkyl chain lengths. Combining experimental characterization and theoretical modelling, we show that these molecules stabilize the perovskite through suppression of iodide ion migration. The stabilization effect is enhanced with increasing chain length due to the stronger binding of the molecules with the perovskite surface, as well as the increased steric hindrance to reconfiguration for accommodating ion migration. The passivation also reduces the surface defects, resulting in a high radiance and delayed roll-off of external quantum efficiency. Using the optimized passivation molecule, phenylpropylammonium iodide, we achieve devices with an efficiency of 17.5%, a radiance of 1282.8 W sr-1 m-2 and a record T50 half-lifetime of 130 h under 100 mA cm-2.
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Affiliation(s)
- Yuwei Guo
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Sofia Apergi
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Nan Li
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China
| | - Mengyu Chen
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China
- School of Electronic Science and Engineering, Xiamen University, Xiamen, People's Republic of China
| | - Chunyang Yin
- Biomolecular and Organic Electronics, Linköping University, Linköping, Sweden
| | - Zhongcheng Yuan
- Biomolecular and Organic Electronics, Linköping University, Linköping, Sweden
| | - Feng Gao
- Biomolecular and Organic Electronics, Linköping University, Linköping, Sweden
| | - Fangyan Xie
- Instrumental Analysis and Research Centre, Sun Yat-sen University, Guangzhou, People's Republic of China
| | - Geert Brocks
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
- Computational Materials Science, Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
| | - Shuxia Tao
- Materials Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.
- Center for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.
| | - Ni Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, People's Republic of China.
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27
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Kausar A, Sattar A, Xu C, Zhang S, Kang Z, Zhang Y. Advent of alkali metal doping: a roadmap for the evolution of perovskite solar cells. Chem Soc Rev 2021; 50:2696-2736. [DOI: 10.1039/d0cs01316a] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Metal–halide hybrid perovskites have prompted the prosperity of the sustainable energy field and simultaneously demonstrated their great potential in meeting both the growing consumption of energy and the increasing social development requirements.
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Affiliation(s)
- Ammarah Kausar
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
| | - Abdul Sattar
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
| | - Chenzhe Xu
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
| | - Suicai Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
| | - Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering
- Beijing Key Laboratory for Advanced Energy Materials and Technologies
- University of Science and Technology Beijing
- Beijing 100083
- P. R. China
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28
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Warby JH, Wenger B, Ramadan AJ, Oliver RDJ, Sansom HC, Marshall AR, Snaith HJ. Revealing Factors Influencing the Operational Stability of Perovskite Light-Emitting Diodes. ACS NANO 2020; 14:8855-8865. [PMID: 32574037 DOI: 10.1021/acsnano.0c03516] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Light-emitting diodes (LEDs) made from metal halide perovskites have demonstrated external electroluminescent quantum efficiencies (EQEEL) in excess of 20%. However, their poor operational stability, resulting in lifetimes of only tens to hundreds of hours, needs to be dramatically improved prior to commercial use. There is little consensus in the community upon which factors limit the stability of these devices. Here, we investigate the role played by ammonium cations on the operational stability. We vary the amount of phenylethylammonium bromide, a widely used alkylammonium salt, that we add to a precursor solution of CsPbBr3 and track changes in stability and EQEEL. We find that while phenylethylammonium bromide is beneficial in achieving high efficiency, it is highly detrimental to operational stability. We investigate material properties and electronic characteristics before and after degradation and find that both a reduction in the radiative efficiency of the emitter and significant changes in current-voltage characteristics explain the orders of magnitude drop in the EQEEL, which we attribute to increased ionic mobility. Our results suggest that engineering new contacts and further investigation into materials with lower ionic mobility should yield much improved stability of perovskite LEDs.
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Affiliation(s)
- Jonathan H Warby
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Bernard Wenger
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Alexandra J Ramadan
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Robert D J Oliver
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Harry C Sansom
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Ashley R Marshall
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
| | - Henry J Snaith
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU, U.K
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