Is Single Layer MoS2 Stable in the Air?

2D TMDC aging: a case study of monolayer WS2and mitigation strategies

Due to their unique properties, two-dimensional transition metal dichalcogenides (2D TMDCs) are considered for diverse applications in microelectronics, sensing, catalysis, to name a few. A common challenge in 2D TMDC research is the film's inherent instability i.e. spontaneous oxidation upon ambient exposure. The present study systematically explores the effect aging on the film composition and photoluminescent properties of monolayer WS2, synthetically grown by metal-organic chemical vapor deposition. The aging rate is investigated for different oxygen- (i.e. O2gas concentration and humidity) and light-controlled environments. Simple mitigation strategies that do not involve capping the 2D TMDC layer are discussed, and their effectiveness demonstrated by benchmarking the evolution in photoluminescence response against ambient exposed monolayer WS2. These results highlight the need to store 2D TMDCs in controlled environments to preserve the film quality and how future studies can account for the aging effect.

Accurate Simulation for 2D Lubricating Materials in Realistic Environments: From Classical to Quantum Mechanical Methods

2D materials such as graphene, MoS2, and hexagonal BN are the most advanced solid lubricating materials with superior friction and anti-wear performance. However, as a typical surface phenomenon, the lubricating properties of 2D materials are largely dependent on the surrounding environment, such as temperature, stress, humidity, oxygen, and other environmental substances. Given the technical challenges in experiment for real-time and in situ detection of microscopic environment-material interaction, recent years have witnessed the acceleration of computational research on the lubrication behavior of 2D materials in realistic environments. This study reviews the up-to-date computational studies for the effect of environmental factors on the lubrication performance of 2D materials, summarizes the theoretical methods in lubrication from classical to quantum-mechanics ones, and emphasizes the importance of quantum method in revealing the lubrication mechanism at atomic and electronic level. An effective simulation method based on ab initio molecular dynamics is also proposed to try to provide more ways to accurately reveal the friction mechanisms and reliably guide the lubricating material design. On the basis of current development, future prospects, and challenges for the simulation and modeling in lubrication with realistic environment are outlined.

Role of S-Vacancy Concentration in Air Oxidation of WS2 Single Crystals

Semiconducting transition metal dichalcogenides (TMDs) are a class of two-dimensional materials with potential applications in optoelectronics, spintronics, valleytronics, and quantum information processing. Understanding their stability under ambient conditions is critical for determining their in-air processability during device fabrication and for predicting their long-term device performance stability. While the effects of environmental conditions (i.e., oxygen, moisture, and light) on TMD degradation are well-acknowledged, the role of defects in driving their oxidation remains unclear. We conducted a systematic X-ray photoelectron spectroscopy study on WS2 single crystals with different surface S-vacancy concentrations formed via controlled argon sputtering. Oxidation primarily occurred at defect concentrations ≥ 10%, resulting in stoichiometric WO3 formation, while a stable surface was observed at lower concentrations. Theoretical calculations informed us that single S-vacancies do not spontaneously oxidize, while defect pairing at high vacancy concentrations facilitates O2 dissociation and subsequent oxide formation. Our XPS results also point to vacancy-related structural and electrostatic disorder as the main origin for the p-type characteristics that persists even after oxidation. Despite the complex interplay between defects and TMD oxidation processes, our work unveils scientifically informed guidance for working effectively with TMDs.

Extremely Enhanced Photoluminescence in MoS2-Derived Quantum Sheets

Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.

Design of MoS2 edge-anchored single-atom catalysts for propane dehydrogenation driven by DFT and microkinetic modeling

The design of efficient catalysts for direct propane dehydrogenation (PDH) to inhibit coke formation and deactivation of traditional Pt-based catalysts are challenging tasks. Herein, by exploiting the unique geometric feature and tunability of single atom catalysts (SACs), a wide range of 3d-5d transition metals anchored on the MoS2 edge in the single atom form (TM1-S4/edge) are comprehensively investigated for the PDH application by first-principles calculations, ab initio molecular dynamics (AIMD) simulations and microkinetic modeling. Five criteria are assessed in terms of the feasibility of preparation, practical stability, feasibility of recovery after air oxidation, activity and selectivity. We identified Ru1-S4/edge SAC as the most promising candidate with activity six times higher than that of the conventional Pt(111) catalyst. Interestingly, AIMD simulations show that the motif region of the highly reactive TM1-S4/edge SACs (such as Ru, Os, Rh, and Ir) exhibits a dynamic change, with a TM-coordinated S atom tending to flutter at reaction temperatures and return to its initial position when the species is adsorbed on TMs, thereby affecting the PDH activities. In addition to identifying the potential PDH catalyst from a practical application point of view, we believe that this study also provides a comprehensive picture for the theoretical screening of low-coordination single-atom catalysts.

Visualized and Nondestructive Quality Identification of Two-Dimensional MoS2 Based on Principal Component Analysis

To date, the common quality characterizations for MoS2 are inefficient or cause irreversible damage to the samples, which have limited scalability and low throughput. Here, we propose a visualized and nondestructive approach to evaluate the quality of MoS2 based on the PCA machine learning method. Through PCA processing of PL mapping, the CVD grown MoS2 with different edge defect densities can be well distinguished. Furthermore, six twin GBs along the sulfur zigzag direction of the six pointed MoS2 stars are also successfully identified. To verify the correctness of the identification results, we measured the lifetime mapping and thermal expansion coefficient of the synthesized MoS2 samples. It is found that the high quality MoS2 samples have a shorter carrier lifetime (∼0.291 ns) and lower thermal expansion coefficient (∼2.03 × 10-5K-1). Therefore, our work offers a new approach to evaluate the quality of MoS2 to drive their practical application.

2D Materials-based Electrochemical Triboelectric Nanogenerators

The integration of 2D materials in triboelectric nanogenerators (TENGs) is known to increase the mechanical-to-electrical power conversion efficiency. 2D materials are used in TENGs with multiple roles as triboelectric material, charge-trapping fillers, or as electrodes. Here, novel TENGs based on few-layers graphene (FLG) electrodes and stable gel electrolytes composed of liquid phase exfoliated 2D-transition metal dichalcogenides and polyvinyl alcohol are developed. TENGs embedding FLG and gel composites show competitive open-circuit voltage (≈ 300 V), instant peak power (530 mW m^-2 ), and stability (> 11 months). These values correspond to a seven-fold higher electrical output compared to TENGs embedding bare FLG electrodes. It is demonstrated that such a significant improvement depends on the high electrical double-layer capacitance (EDLC) of FLG electrodes functionalized with the gel composites. The wet encapsulation of the TENGs is shown to be an effective strategy to increase their power output further highlighting the EDLC role. It is also shown that the EDLC is dependent upon the transition metal (W vs Mo) rather than the relative abundance of 1T or 2H phases. Overall, this work lays down the roots for novel sustainable electrochemical-(e)-TENGs developed exploiting strategies typically used in electrochemical capacitors.

Experimental verification of SO2 and S desorption contributing to defect formation in MoS2 by thermal desorption spectroscopy

The defect-free surface of MoS2 is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur vacancy formation for MoS2, especially on an insulating SiO2/Si substrate. Herein, by applying thermal desorption spectroscopy, we found that sulfur loss can be tightly coupled to adsorbed oxygen, as confirmed by observation of SO2 desorption. With annealing MoS2, even under ultrahigh vacuum, oxygen molecules adsorbed on MoS2 assist the sulfur atom in dissociating from MoS2, and thus, defects are formed as the result of SO2 desorption from 200 °C to 600 °C. At higher temperatures (over 800 °C), on the other hand, direct sulfur desorption becomes dominant. This finding can be well explained by combining the morphology investigation enabled by atomic layer deposition at defective sites and optical transitions observed by photoluminescence measurements. Moreover, a preannealing treatment prior to exfoliation was found to be an effective method to remove the adsorbed oxygen, thus preventing defect formation.

MoS2 oxidative etching caught in the act: formation of single (MoO3) n molecules

We report the presence of sub-nm MoO x clusters formed on basal planes of the 2H MoS2 crystals during thermal oxidative etching in air at a temperature of 370 °C. Using high resolution non-contact atomic force microscopy (AFM) we provide a histogram of their preferred heights. The AFM results combined with density functional theory (DFT) simulations show remarkably well that the MoO x clusters are predominantly single MoO3 molecules and their dimers at the sulfur vacancies. Additional Raman spectroscopy, and energy and wavelength dispersive X-ray spectroscopies as well as Kelvin probe AFM investigations confirmed the presence of the MoO3/MoO x species covering the MoS2 surface only sparsely. The X-ray absorption near edge spectroscopy data confirm the MoO3 stoichiometry. Taken together, our results show that oxidative etching and removal of Mo atoms at the atomic level follow predominantly via formation of single MoO3 molecules. Such findings confirm the previously only proposed oxidative etching stoichiometry.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Oxygen Evolution and Reduction on Two-Dimensional Transition Metal Dichalcogenides

Motivated by the need to find good electrocatalysts for water oxidation and O₂ reduction, composed of nontoxic and earth-abundant elements, a systematic screening of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is performed. To identify compounds that are intrinsically active and can fully take advantage of the high surface area of 2D catalysts, this study focuses on the properties of the ideal basal planes of 2D TMDCs, in the 2H, 1T, and 1T' phases. Over two hundred materials proposed in computational databases are studied by means of first-principles-based simulations coupled with continuum embedding models to account for the presence of electrochemical environments. The best candidates with overpotentials for the oxygen evolution and reduction reactions (OER and ORR) lower than 0.5 V under acidic conditions and higher stability against degradation in electrochemical environments are selected. For OER, the designed workflow identifies one active and thermodynamically stable material, and seven materials that are metastable at the oxidative potentials and acidic pH. On the other hand, for ORR, we identify 20 materials with overpotentials less than 0.5 V. Among these compounds, six bifunctional materials have been experimentally reported, with 1T-NbTe₂ and 1T'-MoTe₂ being the best performing catalysts for OER and ORR, respectively.

Improving the Optical Quality of MoSe2 and WS2 Monolayers with Complete h-BN Encapsulation by High-Temperature Annealing

We improved the optical quality and stability of an exfoliated monolayer (ML) MoSe₂ and chemical vapor deposition (CVD)-grown WS₂ MLs by encapsulating and sealing them with both top and bottom few-layer h-BN, as tested by subsequent high-temperature annealing up to 873 K and photoluminescence (PL) measurements. These transition-metal dichalcogenide (TMD) MLs remained stable up to this maximum temperature, as seen visually. After the heating/cooling cycle, the integrated photoluminescence (PL) intensity at 300 K in the MoSe₂ ML was ∼4 times larger than that before heating and that from exciton and trion PL in the analogous WS₂ ML sample was ∼14 times and ∼2.5 times larger at 77 K and the exciton peak was ∼9.5 times larger at 300 K. This is attributed to the reduction of impurities, the lateral expulsion of contamination leading to clean and atomically flat surfaces, and the sealing provided by the h-BN layers that prevents the diffusion of molecules such as trace O₂ and H₂O to the TMD ML. Stability and optical performance are much improved compared to that in earlier work using top h-BN only, in which the WS₂ ML PL intensity decreased even for an optimal gas environment. This complete encapsulation is particularly promising for CVD-grown TMD MLs because they have relatively more charge and other impurities than do exfoliated MLs. These results open a new route for improving the optical properties of TMD MLs and their performance and applications both at room and higher temperatures.

Understanding the Synergistic Oxidation in Dichalcogenides through Electrochemiluminescence Blinking at Millisecond Resolution

The oxidation of transition metal dichalcogenides (TMDCs) has been extensively studied and applied in electronics, optics, and energy sources because of its tunable structure and performance. However, due to the lack of appropriate technology, dynamically observe the oxidation process remains an arduous task. Herein, the synergistic oxidation between edge and basal plane in molybdenum disulfide (MoS₂ ) is observed through electrogenerated chemiluminescence (ECL) blinking with a millisecond resolution. In addition, the ECL method provides a simple, convenient, and quick way to judge structural changes. The transient elevation of the ECL intensity proved the intermittent doping of oxygen at MoS₂ , which generates O-atom active sites. High ECL intensity enhanced from the produced hydroperoxide intermediates eases the monitoring of MoS₂ particles. Further study shows that the formation of sulfur vacancies at MoS₂ , by the edge activation of hydrogen peroxide and the migration of oxygen to the basal plane, is more conducive to oxygen doping that favors the formation of MoOMo as new active sites to induce bursts. The revealing of sulfur vacancy-governed blinking from MoS₂ indicates a complex interaction between oxygen and MoS₂ . The same phenomenon is observed on tungsten disulfide (WS₂ ), which provides new information about the oxidation feature of 2D dichalcogenides.

Local Interactions of Atmospheric Oxygen with MoS2 Crystals

Thin and single MoS2 flakes are envisioned to contribute to the flexible nanoelectronics, particularly in sensing, optoelectronics and energy harvesting. Thus, it is important to study their stability and local surface reactivity. Their most straightforward surface reactions in this context pertain to thermally induced interactions with atmospheric oxygen. This review focuses on local and thermally induced interactions of MoS2 crystals and single MoS2 flakes. First, experimentally observed data for oxygen-mediated thermally induced morphological and chemical changes of the MoS2 crystals and single MoS2 flakes are presented. Second, state-of-the-art mechanistic insight from computer simulations and arising open questions are discussed. Finally, the properties and fate of the Mo oxides arising from thermal oxidation are reviewed, and future directions into the research of the local MoS2/MoOx interface are provided.

The Role of Additives in Suppressing the Degradation of Liquid-Exfoliated WS2 Monolayers

Group VI transition metal dichalcogenides (TMDs) are considered to be chemically widely inert, but recent reports point toward an oxidation of monolayered sheets in ambient conditions, due to defects. To date, the degradation of monolayered TMDs is only studied on individual, substrate-supported nanosheets with varying defect type and concentration, strain, and in an inhomogeneous environment. Here, degradation kinetics of WS2 nanosheet ensembles in the liquid phase are investigated through photoluminescence measurements, which selectively probe the monolayers. Monolayer-enriched WS2 dispersions are produced with varying lateral sizes in the two common surfactant stabilizers sodium cholate (SC) and sodium dodecyl sulfate (SDS). Well-defined degradation kinetics are observed, which enable the determination of activation energies of the degradation and decouple photoinduced and thermal degradation. The thermal degradation is slower than the photoinduced degradation and requires higher activation energy. Using SC as surfactant, it is sufficiently suppressed. The photoinduced degradation can be widely prevented through chemical passivation achieved through the addition of cysteine which, on the one hand, coordinates to defects on the nanosheets and, on the other hand, stabilizes oxides on the surface, which shield the nanosheets from further degradation.

Rapid Degradation of the Electrical Properties of 2D MoS2 Thin Films under Long-Term Ambient Exposure

The MoS₂ thin film has attracted a lot of attention due to its potential applications in flexible electronics, sensors, catalysis, and heterostructures. Understanding the effect of long-term ambient exposure on the electrical properties of the thin film is important for achieving many overreaching goals of this material. Here, we report for the first time a systematic study of electrical property variation and stability of MoS₂ thin films under ambient exposure of up to a year. The MoS₂ thin films were grown via the sulfurization of 6 nm thick molybdenum films. We found that the resistance of the samples increases by 114% just in 4 weeks and 430% in 4 months and they become fully insulated in a year of ambient exposure. The dual-sweep current-voltage (I-V) characteristic shows hysteretic behavior for a 4-month-old sample which further exhibits pronounced nonlinear I-V curves and hysteretic behavior after 8 months. The X-ray photoelectron spectroscopy measurements show that the MoS₂ thin film gradually oxidizes and 13.1% of MoO₃ and 11.8% oxide of sulfur were formed in 4 months, which further increased to 23.1 and 12.7% in a year, respectively. The oxide of the sulfur peak was not reported in any previous stability studies of exfoliated and chemical vapor deposition-grown MoS₂, suggesting that the origin of this peak is related to the distinct crystallinity of the MoS₂ thin film due to its smaller grain sizes, abundant grain boundaries, and exposed edges. Raman studies show the broadening of E_2g ¹ and A_1g peaks with increasing exposure time, suggesting an increase in the disorder in MoS₂. It is also found that coating the MoS₂ thin film with polymethylmethacrylate can effectively prevent the electrical property degradation, showing only a 6% increase in resistance in 4 months and 40% over a year of ambient exposure.

Stabilization of Chemical-Vapor-Deposition-Grown WS2 Monolayers at Elevated Temperature with Hexagonal Boron Nitride Encapsulation

Chemical vapor deposition (CVD)-grown flakes of high-quality monolayers of WS₂ can be stabilized at elevated temperatures by encapsulation with several layer hexagonal boron nitride (h-BN), but to different degrees in the presence of ambient air, flowing N₂, and flowing forming gas (95% N₂, 5% H₂). The best passivation of WS₂ at elevated temperature occurs for h-BN-covered samples with flowing N₂ (after heating to 873 K), as judged by optical microscopy and photoluminescence (PL) intensity after a heating/cooling cycle. Stability is worse for uncovered samples, but best with flowing forming gas. PL from trions, in addition to that from excitons, is seen for covered WS₂ only for forming gas, during cooling below ∼323 K; the trion has an estimated binding energy of ∼28 meV. It might occur because of doping level changes caused by charge defect generation by H₂ molecules diffusing between the h-BN and the SiO₂/Si substrate. The decomposition of uncovered WS₂ flakes in air suggests a dissociation and chemisorption energy barrier of O₂ on the WS₂ surface of ∼1.6 eV. Fitting the high-temperature PL intensities in air gives a binding energy of a free exciton of ∼229 meV.

Antipathogenic properties and applications of low-dimensional materials

A major health concern of the 21st century is the rise of multi-drug resistant pathogenic microbial species. Recent technological advancements have led to considerable opportunities for low-dimensional materials (LDMs) as potential next-generation antimicrobials. LDMs have demonstrated antimicrobial behaviour towards a variety of pathogenic bacterial and fungal cells, due to their unique physicochemical properties. This review provides a critical assessment of current LDMs that have exhibited antimicrobial behaviour and their mechanism of action. Future design considerations and constraints in deploying LDMs for antimicrobial applications are discussed. It is envisioned that this review will guide future design parameters for LDM-based antimicrobial applications.

Atomic-Scale Edge Morphology, Stability, and Oxidation of Single-Layer 2H-TaS2

Tantalum disulphide belongs to the group of transition metal dichalcogenides (TMDs) and has attracted attention for its unique structural, electronic, and catalytic properties. Herein, we report the edge properties of single-layer 2H-TaS₂ studied by using density functional theory calculations, because the knowledge of the edge morphology, stability, and surface energy is essential for the determination of nanoparticle shapes and understanding the nature of catalytically active sites. We calculate the grand canonical potential of TaS₂ clusters having various edge morphologies to evaluate the edge energies of the Ta-edge and S-edge terminated surfaces. Under S-rich conditions, the most likely shape of TaS₂ is a deformed hexagon dominated by the Ta-edge covered by S monomers, while the triangular shape is preferred under S-poor conditions. Exposed edges of the single-layer TaS₂ are susceptible to oxidation in air because both oxygen adsorption and substitution at the edge are strongly exothermic, -0.96 and -2.20 eV for single O atom, respectively. The XPS calculation shows that specific initial steps of oxidative process (adsorption, vacancy creation, substitution) are unlikely to be distinguished in the XPS spectra due to small shift of respective binding energies, but initial edge oxidation of TaS₂ should be observable by an asymmetry of the Ta 4f doublet towards higher binding energies.

Facile Preparation of WO3-x Dots with Remarkably Low Toxicity and Uncompromised Activity as Co-reactants for Clinical Diagnosis by Electrochemiluminescence

The exceptional nature of WO_3-x dots has inspired widespread interest, but it is still a significant challenge to synthesize high-quality WO_3-x dots without using unstable reactants, expensive equipment, and complex synthetic processes. Herein, the synthesis of ligand-free WO_3-x dots is reported that are highly dispersible and rich in oxygen vacancies by a simple but straightforward exfoliation of bulk WS₂ and a mild follow-up chemical conversion. Surprisingly, the WO_3-x dots emerged as co-reactants for the electrochemiluminescence (ECL) of Ru(bpy)₃ ²⁺ with a comparable ECL efficiency to the well-known Ru(bpy)₃ ²⁺ /tripropylamine (TPrA) system. Moreover, compared to TPrA, whose toxicity remains a critical issue of concern, the WO_3-x dots were ca. 300-fold less toxic. The potency of WO_3-x dots was further explored in the detection of circulating tumor cells (CTCs) with the most competitive limit of detection so far.

Wafer-Scale Two-Dimensional MoS2 Layers Integrated on Cellulose Substrates Toward Environmentally Friendly Transient Electronic Devices

We explored the feasibility of wafer-scale two-dimensional (2D) molybdenum disulfide (MoS₂) layers toward futuristic environmentally friendly electronics that adopt biodegradable substrates. Large-area (> a few cm²) 2D MoS₂ layers grown on silicon dioxide/silicon (SiO₂/Si) wafers were delaminated and integrated onto a variety of cellulose-based substrates of various components and shapes in a controlled manner; examples of the substrates include planar papers, cylindrical natural rubbers, and 2,2,6,6-tetramethylpiperidine-1-oxyl-oxidized cellulose nanofibers. The integrated 2D layers were confirmed to well preserve their intrinsic structural and chemical integrity even on such exotic substrates. Proof-of-concept devices employing large-area 2D MoS₂ layers/cellulose substrates were demonstrated for a variety of applications, including photodetectors, pressure sensors, and field-effect transistors. Furthermore, we demonstrated the complete "dissolution" of the integrated 2D MoS₂ layers in a buffer solution composed of baking soda and deionized water, confirming their environmentally friendly transient characteristics. Moreover, the approaches to delaminate and integrate them do not demand any chemicals except for water, and their original substrates can be recycled for subsequent growths, ensuring excellent chemical benignity and process sustainability.

Oxidation Notably Accelerates Nonradiative Electron-Hole Recombination in MoS2 by Different Mechanisms: Time-Domain Ab Initio Analysis

Two-dimensional transition metal dichalcogenides (TMDs) experience degradation in optoelectronic properties under ambient conditions. By performing nonadiabatic (NA) molecular dynamics simulations, we demonstrate that the MoS₂ monolayer containing substitutional oxygen and oxygen adatom accelerates nonradiative electron-hole recombination by a factor of about 1.5 compared to perfect film but operates by different mechanisms. The substitutional oxygen creates no midgap states while enhancing NA coupling by increasing the overlap between electron and hole wave functions, accelerating electron-hole recombination. In contrast, electrons significantly populate the deep trap state created by the oxygen adatom because the trap is modestly delocalized and coupled strongly to free charges. The trap mediated instead of the direct pathway dominates the electron-hole recombination. The generated insights uncover the mechanisms for different types of defects on influencing charge dynamics in TMDs and suggest that the oxygen defects should be avoided for the design of high-performance optoelectronic devices.

Defect Engineering of Two-Dimensional Molybdenum Disulfide

Two‐dimensional (2D) molybdenum disulfide (MoS₂) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS₂ nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS₂ using thiols has emerged as one of the key strategies for engineering defects. Herein, we demonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS₂ nanosheets using a series of substituted thiophenols in solution. The degree of functionalization can be tuned by varying the electron‐withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A_1g peak strongly correlates to the degree of functionalization. Our results provide a spectroscopic indicator to monitor and quantify the defect engineering process. This method of MoS₂ defect functionalization in solution also benefits the further exploration of defect‐free MoS₂ for a wide range of applications.

Electronic and optical properties of monolayer MoS2 under the influence of polyethyleneimine adsorption and pressure

MoS₂ is one of the well-known transition metal dichalcogenides. The moderate bandgap of monolayer MoS₂ is fascinating for the new generation of optoelectronic devices. Unfortunately, MoS₂ is sensitive to gases in the environment causing its original electronic properties to be modified unexpectedly. This problem has been solved by coating MoS₂ with polymers such as polyethyleneimine (PEI). Furthermore, the application of pressure is also an effective method to modify the physical properties of MoS₂. However, the effects of polyethyleneimine and pressure on the electronic and optical properties of monolayer MoS₂ remain unknown. Therefore, we elucidated this matter by using density functional theory calculations. The results showed that the adsorption of the PEI molecule significantly reduces the width of the direct bandgap of the monolayer MoS₂ to 0.55 eV because of the occurrence of the new energy levels in the bandgap region due to the contribution of the N-2p_z state of the PEI molecule. Remarkably, the transition from semiconductor to metal of the monolayer MoS₂ and the MoS₂/PEI system occurs at the tensile pressure of 24.95 and 21.79 GPa, respectively. The bandgap of these systems approaches 0 eV at the corresponding pressures. Importantly, new peaks in the optical spectrum of the clean MoS₂ and MoS₂/PEI appear in the ultraviolet region under compressive pressures and the infrared region under tensile strains.

Pressure modifies both electronic and optical properties; however, PEI adsorption only alters the electronic structure of monolayer MoS₂.

Enhanced NO2 sensing performance of S-doped biomorphic SnO2 with increased active sites and charge transfer at room temperature

S-Doped biomorphic SnO₂ with active S-terminations and S–Sn–O chemical bonds has significantly improved gas sensing performance to NO₂ at room temperature.

Site-Selective Atomic Layer Precision Thinning of MoS2 via Laser-Assisted Anisotropic Chemical Etching

Various exotic optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) strongly depend on their number of layers, and typically manifest in ultrathin few-layer or monolayer formats. Thus, precise manipulation of thickness and shape is essential to fully access their potential in optoelectronic applications. Here, we demonstrate site-selective atomic layer precision thinning of exfoliated MoS₂ flake by laser. The oxidation mediated anisotropic chemical etching initiated from edge defects and progressed by controlled scanning of the laser beam. Thereby, the topmost layer can be preferentially removed in designed patterns without damaging the bottom flake. In addition, we could monitor the deceleration of the thinning by in situ reflectance measurement. The apparent slow down of the thinning rate is attributed to the sharp reduction in the temperature of the flake due to thickness dependent optical properties. Fabrication of monolayer stripes by laser thinning suggests potential applications in nonlinear optical gratings. The proposed thinning method would offer a unique and rather straightforward way to obtain arbitrary shape and thickness of a TMDCs flake for various optoelectronic applications.

Reversible Photoluminescence Tuning by Defect Passivation via Laser Irradiation on Aged Monolayer MoS2

Atomically thin (1L)-MoS₂ emerged as a direct band gap semiconductor with potential optical applications. The photoluminescence (PL) of 1L-MoS₂ degrades due to aging-related defect formation. The passivation of these defects leads to substantial improvement in optical properties. Here, we report the enhancement of PL on aged 1L-MoS₂ by laser treatment. Using photoluminescence and Raman spectroscopy in a gas-controlled environment, we show that the enhancement is associated with efficient adsorption of oxygen on existing sulfur vacancies preceded by removal of adsorbates from the sample's surface. Oxygen adsorption depletes negative charges, resulting in suppression of trions and improved neutral exciton recombination. The result is a 6- to 8-fold increase in PL emission. The laser treatment in this work does not cause any measurable damage to the sample as verified by Raman spectroscopy, which is important for practical applications. Surprisingly, the observed PL enhancement is reversible by both vacuum and ultrafast femtosecond excitation. While the former approach allows switching a designed micropattern on the sample ON and OFF, the latter provides a controllable mean for accurate PL tuning, which is highly desirable for optoelectronic and gas sensing applications.

One-Dimensional Edge Contacts to a Monolayer Semiconductor

Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS₂. By combining reactive ion etching, in situ Ar⁺ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ∼30 cm² V^-1 s^-1) and high on-current density (>50 μA/μm at V_DS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS₂ channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.

Unveiling chemical reactivity and oxidation of 1T-phased group VI disulfides

Transition metal dichalcogenides (TMDs) are of particular interest because of their unique electrical and optical properties that evolve from the quantum confinement and surface effects. However, their long-term stability in air is proved to be a main concern for practical applications of the ultrathin materials, especially for TMDs with 1T phased structures. Here, we provide an in-depth understanding of the oxidation and degradation mechanisms of monolayers of group VIB disulfides, including TiS₂, ZrS₂, and HfS₂. As the atomic radius of the transitional metals increases, their air stability significantly decreases and the oxidation mechanisms are quite different from one another. In particular, the oxygen induced oxidations initiated at both the surface vacancy sites and edges of ZrS₂ and HfS₂ are studied, while the oxidation of TiS₂ starts at the edges and water plays a crucial role in the continuous oxidation process. Moreover, the defective sites expose the metals for activation and dissociation of either oxygen or water, causing the breakdown of the systems eventually. Meanwhile, these sites can be used as active centers for specific applications in catalysts and surface functionalized materials.

SnS2 Nanograins on Porous SiO2 Nanorods Template for Highly Sensitive NO2 Sensor at Room Temperature with Excellent Recovery

In order to develop high performance chemoresistive gas sensors for Internet of Everything applications, low power consumption should be achieved due to the limited battery capacity of portable devices. One of the most efficient ways to reduce power consumption is to lower the operating temperature to room temperature. Herein, we report superior gas sensing properties of SnS₂ nanograins on SiO₂ nanorods toward NO₂ at room temperature. The gas response is as high as 701% for 10 ppm of NO₂ with excellent recovery characteristics and the theoretical detection limit is evaluated to be 408.9 ppb at room temperature, which has not been reported for SnS₂-based gas sensors to the best of our knowledge. The SnS₂ nanograins on the template used in this study have excessive sulfur component (Sn:S = 1:2.33) and exhibit p-type conduction behavior. These results will provide a new perspective of nanostructured two-dimensional materials for gas sensor applications on demand.

An elevated concentration of MoS2 lowers the efficacy of liquid-phase exfoliation and triggers the production of MoOx nanoparticles

The oxidation of MoS₂ with a simultaneous decrease of MoS₂ content.

Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical properties, and hold potential to enable a host of new device applications spanning from flexible/wearable (opto)electronics to energy-harvesting and sensing technologies. A critical requirement for developing practical and reliable electronic devices based on semiconducting TMDs consists in achieving a full control over their charge-carrier polarity and doping. Inconveniently, such a challenging task cannot be accomplished by means of well-established doping techniques (e.g. ion implantation and diffusion), which unavoidably damage the 2D crystals resulting in degraded device performances. Nowadays, a number of alternatives are being investigated, including various (supra)molecular chemistry approaches relying on the combination of 2D semiconductors with electroactive donor/acceptor molecules. As yet, a large variety of molecular systems have been utilized for functionalizing 2D TMDs via both covalent and non-covalent interactions. Such research endeavours enabled not only the tuning of the charge-carrier doping but also the engineering of the optical, electronic, magnetic, thermal and sensing properties of semiconducting TMDs for specific device applications. Here, we will review the most enlightening recent advancements in experimental (supra)molecular chemistry methods for tailoring the properties of atomically-thin TMDs - in the form of substrate-supported or solution-dispersed nanosheets - and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and devices based on 2D semiconductors and molecular systems.

The Potential of Tribological Application of DLC/MoS2 Coated Sealing Materials

The potential of the combination of hard and soft coating on elastomers was investigated. Diamond-like carbon (DLC), molybdenum disulfide (MoS2) and composite coatings of these two materials with various DLC/MoS2 ratios were deposited on four elastomeric substrates by means of the magnetron sputtering method. The microstructures, surface energy of the coatings, and substrates were characterized by scanning electron microscopy (SEM) and contact angle, respectively. The chemical composition was identified by X-ray Photoelectron Spectroscopy (XPS). A ball on disc configuration was used as the model test, which was performed under dry and lubricated conditions. Based on the results from the model tests, the best coating was selected for each substrate and subsequently verified in component-like test. There is not one coating that is optimal for all substrates. Many factors can affect the coatings performance. The topography and the rigidity of the substrates are the key factors. However, the adhesion between coatings and substrates, and also the coating processes, can impact significantly on the coatings performance.

TMD-based highly efficient electrocatalysts developed by combined computational and experimental approaches

A thorough review on combined computational and experimental approaches to develop TMD-based highly efficient electrocatalysts by site doping, phase modulation, control of growth morphology and construction of heterostructures.

Synthesis of MoS2 nanosheets for mercury speciation analysis by HPLC-UV-HG-AFS

Mercury species have aroused wide concern in the past several decades due to their high toxicity. However, it is still difficult to detect ultra-trace mercury species due to their biochemical transformation in complex samples. To establish a simpler and more sensitive method for pre-concentration and determination of trace mercury species, molybdenum disulfide (MoS₂) nanosheets with sulfur-rich characteristics and enlarged interlayer spacing were prepared by a hydrothermal method coupled with a sonication-assisted liquid exfoliation method and acted as solid-phase extraction adsorbent. The nano-MoS₂ had high adsorption capacity, fast adsorption rate and excellent selectivity towards mercury ions (Hg²⁺), methyl mercury (MeHg⁺) and ethyl mercury (EtHg⁺) in a wide pH range and complex matrices. And it could be easily regenerated by 4 mol L⁻¹ HCl and reused several times. After optimizing HPLC-UV-HG-AFS conditions, a great linearity (1.0–10.0 μg L⁻¹, R² = 0.999 for Hg²⁺, MeHg⁺ and EtHg⁺), lower detection limits (0.017, 0.037 and 0.021 ng mL⁻¹ for Hg²⁺, MeHg⁺ and EtHg⁺, respectively), relative standard deviations (<5%) and addition recoveries of the samples within 82.75–113.38% were observed. In summary, trace inorganic and organic mercury species in environmental and biological samples could be selectively enriched by the prepared nano-MoS₂ and efficiently seperated and detected by HPLC-UV-HG-AFS. The present study will help provide a better strategy for environmental monitoring and health assessment of mercury pollutants.

As-synthesized few-layered molybdenum disulfide nanosheets were used as solid-phase extraction absorbent for ultra-trace mercury speciation analysis by HPLC-UV-HG-AFS.

Surface properties of MoS2 probed by inverse gas chromatography and their impact on electrocatalytic properties

Layered transition metal dichalcogenides (TMDs) are at the forefront of materials research. One of the most important applications of these materials is their electrocatalytic activity towards hydrogen evolution, and these materials are suggested to replace scarce platinum. Whilst there are significant efforts towards this goal, there are various reports of electrocatalysis of MoS₂ (which is the most commonly tested TMD) with large variations of the reported electrocatalytic effect of the material, with overpotential varying by several hundreds of millivolts. Here, we analyzed surface properties of various bulk as well as single layer MoS₂ samples using inverse gas chromatography. All samples displayed significant variations in surface energies and their heterogeneities. The surface energy ranged from 50 to 120 mJ m^-2 depending on the sample and surface coverage. We correlated the surface properties and previously reported structural features of MoS₂ with their electrochemical activities. We concluded that the observed differences in electrochemistry are caused by the surface properties. This is an important finding with an enormous impact on the whole field of electrocatalysis of layered materials.