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An H, Li Y, Ren Y, Wan Y, Wang W, Sun Z, Zhong J, Peng Z. High-performance flexible resistive random-access memory based on SnS 2 quantum dots with a charge trapping/de-trapping effect. NANOSCALE 2024; 16:12142-12148. [PMID: 38832816 DOI: 10.1039/d4nr00745j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
The application of resistive random-access memory (RRAM) in storage and neuromorphic computing has attracted widespread attention. Benefitting from the quantum effect, transition metal dichalcogenides (TMD) quantum dots (QDs) exhibit distinctive optical and electronic properties, which make them promising candidates for emerging RRAM. Here, we show a high-performance forming-free flexible RRAM based on high-quality tin disulfide (SnS2) QDs prepared by a facile liquid phase method. The RRAM device demonstrates high flexibility with a large on/off ratio of ∼106 and a long retention time of over 3 × 104 s. The excellent switching behavior of the memristor is elucidated by a charge trapping/de-trapping mechanism where the SnS2 QDs act as charge trapping centers. This study is of significance for the understanding and development of TMD QD-based flexible memristors.
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Affiliation(s)
- Hua An
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yiyang Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yi Ren
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yili Wan
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Weigao Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Zhenhua Sun
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Junwen Zhong
- Department of Electromechanical Engineering, University of Macau, Macau, SAR, 999078, China.
| | - Zhengchun Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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2
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Panisilvam J, Lee HY, Byun S, Fan D, Kim S. Two-dimensional material-based memristive devices for alternative computing. NANO CONVERGENCE 2024; 11:25. [PMID: 38937391 PMCID: PMC11211314 DOI: 10.1186/s40580-024-00432-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 06/14/2024] [Indexed: 06/29/2024]
Abstract
Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.
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Affiliation(s)
- Jey Panisilvam
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Ha Young Lee
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Sujeong Byun
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Daniel Fan
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia.
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3
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Wang J, Li S, Yang L, Kwan CS, Xie C, Cheung KY, Sun RWY, Chan ASC, Huang Z, Cai Z, Zeng T, Leung KCF. Janus and Amphiphilic MoS 2 2D Sheets for Surface-Directed Orientational Assemblies toward Ex Vivo Dual Substrate Release. SMALL METHODS 2024:e2400533. [PMID: 38874104 DOI: 10.1002/smtd.202400533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2024] [Revised: 05/17/2024] [Indexed: 06/15/2024]
Abstract
The two-dimensional (2-D) Janus and amphiphilic molybdenum disulfide (MoS2) nanosheet with opposite optical activities on each side (amphichiral) is synthesized by modifying sandwich-like bulk MoS2 with tannic acid and cholesterol through biphasic emulsion method. This new type of amphichiral Janus MoS2 nanosheet consists of a hydrophilic and positive optical activity tannic acid side as well as a hydrophobic and negative optical activity cholesterol side thereby characterized by circular dichroism. Surface-directed orientational differentiation assemblies are performed for the as-synthesized 2D material and are characterized by contact angle, infrared spectroscopy, X-ray photoelectron, and circular dichroism spectroscopies. The amphiphilic nature of the materials is demonstrated by the pre-organization of the nanosheets on either hydrophobic or hydrophilic surfaces, providing unprecedented properties of circular dichroism signal enhancement and wettability. Selective detachment of the surface organic groups (cholesterol and tannic acid fragments) is realized by matrix-assisted laser desorption/ionisation - time-of-flight (MALDI-TOF) mass spectrometry, and the dual substrate release in tissue is detected by ex vivo mass spectrometry imaging.
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Affiliation(s)
- Jianing Wang
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
| | - Shuqi Li
- College of Environment, Zhejiang University of Technology, 18 Chaowang Road, Hangzhou, Zhejiang, 310014, P. R. China
| | - Lin Yang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, P. R. China
| | - Chak-Shing Kwan
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
- Department of Chemistry, Great Bay University and Great Bay Institute for Advanced Study, Dongguan, 523000, P. R. China
| | - Chengyi Xie
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
| | - Kwan Yin Cheung
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
| | - Raymond Wai-Yin Sun
- Guangzhou Lee & Man Technology Company Limited, 8 Huanshi Avenue, Nansha, Guangzhou, 511458, P. R. China
| | - Albert S C Chan
- Guangzhou Lee & Man Technology Company Limited, 8 Huanshi Avenue, Nansha, Guangzhou, 511458, P. R. China
| | - Zhifeng Huang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, P. R. China
| | - Zongwei Cai
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
| | - Tao Zeng
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
- College of Environment, Zhejiang University of Technology, 18 Chaowang Road, Hangzhou, Zhejiang, 310014, P. R. China
| | - Ken Cham-Fai Leung
- Department of Chemistry and State Key Laboratory of Environmental and Biological Analysis, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, P. R. China
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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Bongu C, Krishnan MR, Soliman A, Arsalan M, Alsharaeh EH. Flexible and Freestanding MoS 2/Graphene Composite for High-Performance Supercapacitors. ACS OMEGA 2023; 8:36789-36800. [PMID: 37841111 PMCID: PMC10568709 DOI: 10.1021/acsomega.3c03370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 09/21/2023] [Indexed: 10/17/2023]
Abstract
Two-dimensional atomically thick materials such as graphene and layered molybdenum disulfide (MoS2) have been studied as potential energy storage materials because of their high specific surface area, potential redox activity, and mechanical flexibility. However, because of the layered structure restacking and poor electrical conductivity, these materials are unable to attain their full potential. Composite electrodes made of a mixture of graphene and MoS2 have been shown to partially resolve these issues in the past, although their performance is still limited by inadequate mixing at the nanoscale. Herein, we report three composites via a simple ball-milling method and analyze supercapacitor electrodes. Compared with pristine graphene and MoS2, the composites showed high capacitance. The as-obtained MoS2@Graphene composite (1:9) possesses a high surface area and uniform dispersion of MoS2 on the graphene sheet. The MoS2@Graphene (1:9) composite electrode has a high specific capacitance of 248 F g-1 at 5 A g-1 in an electrochemical supercapacitor compared with the other two composites. Simultaneously, the flexible symmetric supercapacitor device prepared demonstrated superior flexibility and a long lifespan (93% capacitance retention after 8000 cycles) with no obvious changes in performance under different angles. In portable and wearable energy storage devices, the current experimental results will result in scalable, freestanding hybrid electrodes with improved, flexible, supercapacitive performance.
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Affiliation(s)
- Chandra
Sekhar Bongu
- College
of Science and General Studies, Alfaisal
University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
| | - Mohan Raj Krishnan
- College
of Science and General Studies, Alfaisal
University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
| | - Abdelrahman Soliman
- College
of Science and General Studies, Alfaisal
University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
| | - Muhammad Arsalan
- EXPEC
Advanced Research Center, Saudi Aramco, P.O. Box 5000, Dhahran 31311, Saudi Arabia
| | - Edreese H. Alsharaeh
- College
of Science and General Studies, Alfaisal
University, P.O. Box 50927, Riyadh 11533, Saudi Arabia
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6
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Sarkar S, Banik H, Rahman FY, Majumdar S, Bhattacharjee D, Hussain SA. Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives. RSC Adv 2023; 13:26330-26343. [PMID: 37671340 PMCID: PMC10476023 DOI: 10.1039/d3ra03869f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Accepted: 08/18/2023] [Indexed: 09/07/2023] Open
Abstract
Non-volatile memory devices using organic materials have attracted much attention due to their excellent scalability, fast switching speed, low power consumption, low cost etc. Here, we report both volatile as well as non-volatile resistive switching behavior of p-di[3,3'-bis(2-methylindolyl)methane]benzene (Indole2) and its mixture with stearic acid (SA). Previously, we have reported the bipolar resistive switching (BRS) behavior using 1,4-bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules under ambient conditions [Langmuir 37 (2021) 4449-4459] and complementary resistive switching (CRS) behavior when the device was exposed to 353 K or higher temperature [Langmuir 38 (2022) 9229-9238]. However, the present study revealed that when the H of -NH group of Indole1 is replaced by -CH3, the resultant Indole2 molecule-based device showed volatile threshold switching behaviour. On the other hand, when Indole2 is mixed with SA at a particular mole fraction, dynamic evolution of an Au/Indole2-SA/ITO device from volatile to non-volatile switching occurred with very good device stability (>285 days), memory window (6.69 × 102), endurance (210 times), data retention (6.8 × 104 s) and device yield of the order of 78.5%. Trap controlled SCLC as well as electric field driven conduction was the key behind the observed switching behaviour of the devices. In the active layer, trap centers due to the SA network may be responsible for non-volatile characteristics of the device. Observed non-volatile switching may be a potential candidate for write once read many (WORM) memory applications in future.
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Affiliation(s)
- Surajit Sarkar
- Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022 West Tripura Tripura India
| | - Hritinava Banik
- Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022 West Tripura Tripura India
| | - Farhana Yasmin Rahman
- Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022 West Tripura Tripura India
| | - Swapan Majumdar
- Department of Chemistry, Tripura University Suryamaninagar 799022 West Tripura Tripura India
| | - Debajyoti Bhattacharjee
- Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022 West Tripura Tripura India
| | - Syed Arshad Hussain
- Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022 West Tripura Tripura India
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Ali S, Ullah MA, Raza A, Iqbal MW, Khan MF, Rasheed M, Ismail M, Kim S. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2443. [PMID: 37686950 PMCID: PMC10489950 DOI: 10.3390/nano13172443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/23/2023] [Accepted: 08/27/2023] [Indexed: 09/10/2023]
Abstract
This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO2)-based resistive random-access memories (RRAMs). CeO2 is considered the most promising candidate because of its multiple oxidation states (Ce3+ and Ce4+), remarkable resistive-switching (RS) uniformity in DC mode, gradual resistance transition, cycling endurance, long data-retention period, and utilization of the RS mechanism as a dielectric layer, thereby exhibiting potential for neuromorphic computing. In this context, a detailed study of the filamentary mechanisms and their types is required. Accordingly, extensive studies on unipolar, bipolar, and threshold memristive behaviors are reviewed in this work. Furthermore, electrode-based (both symmetric and asymmetric) engineering is focused for the memristor's structures such as single-layer, bilayer (as an oxygen barrier layer), and doped switching-layer-based memristors have been proved to be unique CeO2-based synaptic devices. Hence, neuromorphic applications comprising spike-based learning processes, potentiation and depression characteristics, potentiation motion and synaptic weight decay process, short-term plasticity, and long-term plasticity are intensively studied. More recently, because learning based on Pavlov's dog experiment has been adopted as an advanced synoptic study, it is one of the primary topics of this review. Finally, CeO2-based memristors are considered promising compared to previously reported memristors for advanced synaptic study in the future, particularly by utilizing high-dielectric-constant oxide memristors.
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Affiliation(s)
- Sarfraz Ali
- Department of Physics, Riphah International University, Lahore Campus, 13-KM Raiwand Road, Lahore 54000, Pakistan
| | | | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples ‘Federico II’, Piazzale Tecchio, 80, 80125 Naples, Italy
| | - Muhammad Waqas Iqbal
- Department of Physics, Riphah International University, Lahore Campus, 13-KM Raiwand Road, Lahore 54000, Pakistan
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Maria Rasheed
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea;
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea;
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8
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Aldana S, Jadwiszczak J, Zhang H. On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors. NANOSCALE 2023; 15:6408-6416. [PMID: 36929381 DOI: 10.1039/d2nr06810a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional 2H-MoS2 planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.
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Affiliation(s)
- Samuel Aldana
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Jakub Jadwiszczak
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Hongzhou Zhang
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
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9
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Qiao Y, Luo J, Cui T, Liu H, Tang H, Zeng Y, Liu C, Li Y, Jian J, Wu J, Tian H, Yang Y, Ren TL, Zhou J. Soft Electronics for Health Monitoring Assisted by Machine Learning. NANO-MICRO LETTERS 2023; 15:66. [PMID: 36918452 PMCID: PMC10014415 DOI: 10.1007/s40820-023-01029-1] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Accepted: 01/05/2023] [Indexed: 06/18/2023]
Abstract
Due to the development of the novel materials, the past two decades have witnessed the rapid advances of soft electronics. The soft electronics have huge potential in the physical sign monitoring and health care. One of the important advantages of soft electronics is forming good interface with skin, which can increase the user scale and improve the signal quality. Therefore, it is easy to build the specific dataset, which is important to improve the performance of machine learning algorithm. At the same time, with the assistance of machine learning algorithm, the soft electronics have become more and more intelligent to realize real-time analysis and diagnosis. The soft electronics and machining learning algorithms complement each other very well. It is indubitable that the soft electronics will bring us to a healthier and more intelligent world in the near future. Therefore, in this review, we will give a careful introduction about the new soft material, physiological signal detected by soft devices, and the soft devices assisted by machine learning algorithm. Some soft materials will be discussed such as two-dimensional material, carbon nanotube, nanowire, nanomesh, and hydrogel. Then, soft sensors will be discussed according to the physiological signal types (pulse, respiration, human motion, intraocular pressure, phonation, etc.). After that, the soft electronics assisted by various algorithms will be reviewed, including some classical algorithms and powerful neural network algorithms. Especially, the soft device assisted by neural network will be introduced carefully. Finally, the outlook, challenge, and conclusion of soft system powered by machine learning algorithm will be discussed.
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Affiliation(s)
- Yancong Qiao
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
| | - Jinan Luo
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Tianrui Cui
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Haidong Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Hao Tang
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yingfen Zeng
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chang Liu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Yuanfang Li
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - Jinming Jian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jingzhi Wu
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yi Yang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Jianhua Zhou
- School of Biomedical Engineering, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen, 518107, People's Republic of China.
- Key Laboratory of Sensing Technology and Biomedical Instruments of Guangdong Province, School of Biomedical Engineering, Sun Yat-sen University, Guangzhou, 510275, People's Republic of China.
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10
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Ma H, Kim D, Park SI, Choi BK, Park G, Baek H, Lee H, Kim H, Yu J, Lee WC, Park J, Yang J. Direct Observation of Off-Stoichiometry-Induced Phase Transformation of 2D CdSe Quantum Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205690. [PMID: 36638252 PMCID: PMC9982559 DOI: 10.1002/advs.202205690] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Crystal structures determine material properties, suggesting that crystal phase transformations have the potential for application in a variety of systems and devices. Phase transitions are more likely to occur in smaller crystals; however, in quantum-sized semiconductor nanocrystals, the microscopic mechanisms by which phase transitions occur are not well understood. Herein, the phase transformation of 2D CdSe quantum nanosheets caused by off-stoichiometry is revealed, and the progress of the transformation is directly observed by in situ transmission electron microscopy. The initial hexagonal wurtzite-CdSe nanosheets with atomically uniform thickness are transformed into cubic zinc blende-CdSe nanosheets. A combined experimental and theoretical study reveals that electron-beam irradiation can change the stoichiometry of the nanosheets, thereby triggering phase transformation. The loss of Se atoms induces the reconstruction of surface atoms, driving the transformation from wurtzite-CdSe(11 2 ¯ $\bar{2}$ 0) to zinc blende-CdSe(001) 2D nanocrystals. Furthermore, during the phase transformation, unconventional dynamic phenomena occur, including domain separation. This study contributes to the fundamental understanding of the phase transformations in 2D quantum-sized semiconductor nanocrystals.
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Affiliation(s)
- Hyeonjong Ma
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Dongjun Kim
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Soo Ik Park
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Back Kyu Choi
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Gisang Park
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Hayeon Baek
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
| | - Hyocheol Lee
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Hyeongseoung Kim
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Jong‐Sung Yu
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
- Energy Science and Engineering Research CenterDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
| | - Won Chul Lee
- Department of Mechanical EngineeringBK21 FOUR ERICA‐ACE CenterHanyang UniversityAnsanGyeonggi15588Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle ResearchInstitute for Basic Science (IBS)Seoul08826Republic of Korea
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesSeoul National UniversitySeoul08826Republic of Korea
- Institute of Engineering ResearchCollege of EngineeringSeoul National UniversitySeoul08826Republic of Korea
- Advanced Institute of Convergence TechnologySeoul National UniversitySuwon‐siGyeonggi‐do16229Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and EngineeringDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
- Energy Science and Engineering Research CenterDaegu Gyeongbuk Institute of Science and Technology (DGIST)Daegu42988Republic of Korea
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11
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Saadati M, Akhavan O, Fazli H, Nemati S, Baharvand H. Controlled Differentiation of Human Neural Progenitor Cells on Molybdenum Disulfide/Graphene Oxide Heterojunction Scaffolds by Photostimulation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3713-3730. [PMID: 36633466 DOI: 10.1021/acsami.2c15431] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Ultrathin MoS2-MoO3-x heterojunction nanosheets with unique features were introduced as biocompatible, non-cytotoxic, and visible light-sensitive stimulator layers for the controlled differentiation of human neural progenitor cells (hNPCs) into nervous lineages. hNPC differentiation was also investigated on reduced graphene oxide (rGO)-containing scaffolds, that is, rGO and rGO/MoS2-MoO3-x nanosheets. In darkness, hNPC differentiation into neurons increased on MoS2-MoO3-x by a factor of 2.7 due to the excellent biophysical cues and further increased on rGO/MoS2-MoO3-x by a factor of 4.4 due to a synergistic effect induced by the rGO. The MoO3-x domains with antioxidant activity and LSPR absorption induced p-type doping in MoS2-MoO3-x. Under photostimulation, the hNPCs on the MoS2-MoO3-x exhibited higher differentiation into glial cells by a factor of 1.4, and the decrease in photo-electron current to hNPCs due to the induction of more p-type doping in the MoS2-MoO3-x. While the increase in neuronal differentiation of hNPCs on rGO/MoS2-MoO3-x by a factor of 1.8 was ascribed to the presence of rGO as an ultrafast electron transferor which quickly transferred photogenerated electrons to hNPCs before their transfer to free radicals, these results demonstrated the promising potential of MoS2-based scaffolds for applying in the controllable repair and/or regeneration of diseases/disorders related to the nervous system.
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Affiliation(s)
- Maryam Saadati
- Department of Physics, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731, Iran
| | - Omid Akhavan
- Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran P932+FM4, Islamic Republic of Iran
| | - Hossein Fazli
- Department of Physics, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan 45137-66731, Iran
| | - Shiva Nemati
- Department of Stem Cells and Developmental Biology, Cell Science Research Center, Royan Institute for Stem Cell Biology and Technology, ACECR, P.O. Box 16635-148, Tehran 1665659911, Iran
| | - Hossein Baharvand
- Department of Stem Cells and Developmental Biology, Cell Science Research Center, Royan Institute for Stem Cell Biology and Technology, ACECR, P.O. Box 16635-148, Tehran 1665659911, Iran
- Department of Developmental Biology, School of Basic Sciences and Advanced Technologies in Biology, University of Science and Culture, Tehran P8XM+PMV, Iran
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12
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Jian J, Dong P, Jian Z, Zhao T, Miao C, Chang H, Chen J, Chen YF, Chen YB, Feng H, Sorli B. Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs. ACS NANO 2022; 16:20445-20456. [PMID: 36468939 DOI: 10.1021/acsnano.2c06728] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm.
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Affiliation(s)
- Jiaying Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Pengfan Dong
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Zengyun Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Ting Zhao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Chen Miao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Honglong Chang
- School of Mechanical Engineering, Northwestern Polytechnical University, Xi'an710072, China
| | - Jian Chen
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Yan-Feng Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Yan-Bin Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Hao Feng
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Brice Sorli
- Institute of Electronics and Systems, University of Montpellier, Montpellier34095, France
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13
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Sun T, Shi H, Gao S, Zhou Z, Yu Z, Guo W, Li H, Zhang F, Xu Z, Zhang X. Stable Resistive Switching in ZnO/PVA:MoS 2 Bilayer Memristor. NANOMATERIALS 2022; 12:nano12121977. [PMID: 35745316 PMCID: PMC9230909 DOI: 10.3390/nano12121977] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2022] [Revised: 05/31/2022] [Accepted: 06/01/2022] [Indexed: 11/16/2022]
Abstract
Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS2 is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS2/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS2/ITO was improved greatly. Furthermore, a large resistive memory window up to 104 was observed in the Ag/ZnO/PVA:MoS2/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS2/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.
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Affiliation(s)
- Tangyou Sun
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Hui Shi
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Shuai Gao
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Zhiping Zhou
- State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China;
| | - Zhiqiang Yu
- School of Electrical and Information Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China
- Correspondence: (Z.Y.); (X.Z.)
| | - Wenjing Guo
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Haiou Li
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Fabi Zhang
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
| | - Zhimou Xu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Xiaowen Zhang
- Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China; (T.S.); (H.S.); (S.G.); (W.G.); (H.L.); (F.Z.)
- Correspondence: (Z.Y.); (X.Z.)
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14
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Li S, Pam ME, Li Y, Chen L, Chien YC, Fong X, Chi D, Ang KW. Wafer-Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy-Efficient Neural Network Hardware. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2103376. [PMID: 34510567 DOI: 10.1002/adma.202103376] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, the implementation of crossbar array (CBA) based on ultrathin 2D materials is hindered by challenges associated with large-scale material synthesis and device integration. Here, a memristor CBA is demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe2 ) grown by molecular beam epitaxy, and a metal-assisted van der Waals transfer technique. The memristor exhibits small switching voltage (0.6 V), low switching energy (0.82 pJ), and simultaneously achieves emulation of synaptic weight plasticity. Furthermore, the CBA enables artificial neural network with a high recognition accuracy of 93.34%. Hardware multiply-and-accumulate (MAC) operation with a narrow error distribution of 0.29% is also demonstrated, and a high power efficiency of greater than 8-trillion operations per second per Watt is achieved. Based on the MAC results, hardware convolution image processing can be performed using programmable kernels (i.e., soft, horizontal, and vertical edge enhancement), which constitutes a vital function for neural network hardware.
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Affiliation(s)
- Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Mei-Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Li Chen
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Xuanyao Fong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 2 Fusionopolis Way, Singapore, 138634, Singapore
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15
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Liao K, Lei P, Tu M, Luo S, Jiang T, Jie W, Hao J. Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:32606-32623. [PMID: 34253011 DOI: 10.1021/acsami.1c07665] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.
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Affiliation(s)
- Kanghong Liao
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Peixian Lei
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Meilin Tu
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Songwen Luo
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Ting Jiang
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong China
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16
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Yin L, Cheng R, Wen Y, Liu C, He J. Emerging 2D Memory Devices for In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007081. [PMID: 34105195 DOI: 10.1002/adma.202007081] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Revised: 12/27/2020] [Indexed: 06/12/2023]
Abstract
It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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17
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Ryu W, Xiang L, Jin KS, Kim HJ, Kim HC, Ree M. Newly Found Digital Memory Characteristics of Pyrrolidone- and Succinimide-Based Polymers. Macromol Rapid Commun 2021; 42:e2100186. [PMID: 33987942 DOI: 10.1002/marc.202100186] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Revised: 04/27/2021] [Indexed: 11/10/2022]
Abstract
This study reports for the first time the excellent nonvolatile and volatile digital memory characteristics of polymers bearing 2-pyrrolidone and succinimide moieties. A series of new polymers is synthesized from poly(ethylene-alt-maleic anhydride) and four alcohol derivatives with and without 2-pyrrolidone and succinimide moieties. All polymers, including polyvinylpyrrolidone, are found to be thermally stable up to 195 °C or higher, and characterized regarding their molecular orbital energy levels, bandgap, and resistive digital memory behaviors. Excitingly, the polymers bearing either 2-pyrrolidone or succinimide moiety demonstrate p-type digital memory behaviors with high ON/OFF current ratios and long reliabilities. Nonvolatile digital memory performance is achieved over the film thickness range of 10-80 nm, whereas volatile digital memory is demonstrated over a much narrower range of film thickness. All digital memory performances can be originated from the 2-pyrrolidone and succinimide moieties possessing high affinity and stabilization power to charges via charge traps and transformations based on a hopping conduction process. Hence, these new polymers are suitable for the production of high-performance p-type nonvolatile and volatile digital memory devices. Moreover, 2-pyrrolidone and succinimide can be used as new and economical electroactive building blocks for the development of advanced digital memory materials.
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Affiliation(s)
- Wonyeong Ryu
- Division of Advanced Materials Science and Department of Chemistry, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Li Xiang
- Division of Advanced Materials Science and Department of Chemistry, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Kyeong Sik Jin
- PLS-II Beamline Division, Pohang Accelerator Laboratory, Pohang, 37673, Republic of Korea
| | - Hyun-Joong Kim
- Ceko Corporation, Surface Technology Institute, 519 Dunchon-daero, Jungwon-gu, Seongnam, 13216, Republic of Korea
| | - Hong-Chul Kim
- Ceko Corporation, Surface Technology Institute, 519 Dunchon-daero, Jungwon-gu, Seongnam, 13216, Republic of Korea
| | - Moonhor Ree
- Ceko Corporation, Surface Technology Institute, 519 Dunchon-daero, Jungwon-gu, Seongnam, 13216, Republic of Korea
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18
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Gong Y, Xing X, Wang Y, Lv Z, Zhou Y, Han ST. Emerging MXenes for Functional Memories. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100006] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yue Gong
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Xuechao Xing
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Ziyu Lv
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
| | - Ye Zhou
- Institute for Advanced Study Shenzhen University Shenzhen 518060 P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics Shenzhen University Shenzhen 518060 P. R. China
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19
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Zeng T, Yang Z, Liang J, Lin Y, Cheng Y, Hu X, Zhao X, Wang Z, Xu H, Liu Y. Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing. NANOSCALE ADVANCES 2021; 3:2623-2631. [PMID: 36134157 PMCID: PMC9419774 DOI: 10.1039/d1na00152c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Accepted: 03/28/2021] [Indexed: 05/19/2023]
Abstract
Memristive devices are widely recognized as promising hardware implementations of neuromorphic computing. Herein, a flexible and transparent memristive synapse based on polyvinylpyrrolidone (PVP)/N-doped carbon quantum dot (NCQD) nanocomposites through regulating the NCQD doping concentration is reported. In situ Kelvin probe force microscopy showed that the trapping/detrapping of space charge can account for the memristive mechanism of the device. Diverse synaptic functions, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and the transition from short-term plasticity (STP) to long-term plasticity (LTP), are emulated, enabling the PVP-NCQD hybrid system to be a valuable candidate for the design of novel artificial neural architectures. In addition, the synaptic device showed excellent flexibility against mechanical strain after repeated bending tests. This work provides a new approach to develop flexible and transparent organic artificial synapses for future wearable neuromorphic computing systems.
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Affiliation(s)
- Tao Zeng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Zhi Yang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Jiabing Liang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Yankun Cheng
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Xiaochi Hu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education 5268 Renmin Street Changchun P. R. China
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20
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Jung KH, Yeon C, Yang J, Cheon YJ, Lim JW, Yun SJ. Polyvinylalcohol (PVA)-Assisted Exfoliation of ReS 2 Nanosheets and the Use of ReS 2-PVA Composites for Transparent Memristive Photosynapse Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8919-8928. [PMID: 33567825 DOI: 10.1021/acsami.0c20666] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for their outstanding optoelectrical properties. Unlike most TMDs with layer-dependent photoresponsivity, rhenium disulfide (ReS2) shows excellent thickness-independent photoresponsivity. Herein, we show a surfactant-free polyvinyl alcohol (PVA)-assisted exfoliation method for 2D-TMDs in aqueous solution and a transparent photosensitive memristor synapse device based on ReS2 nanosheets composited with PVA. ReS2 nanosheets are obtained via PVA-assisted exfoliation. After exfoliation, the ReS2-PVA dispersion solution is spin-coated on a substrate and dried to form a nanocomposite film without additional processing. Transparent memristors are then fabricated on plastic or glass substrates to demonstrate the applicability of the ReS2-PVA film. The devices show "write once, read many" memory behavior with a high ON/OFF current ratio (1.0 × 104 at 0.5 V) during electrical operation. In the high resistive state, synaptic functions with long-term memory behavior are successfully mimicked by applying photonic stimuli to the transparent ReS2-PVA memristors. The excitatory postsynaptic current stimulated by the photosignal is gradually reduced by electric stimuli. The proposed PVA-assisted exfoliation method is cost-effective, environmentally friendly, and applicable to various TMD nanomaterials. Furthermore, the ReS2-PVA nanocomposite film obtained via a simple solution-based process demonstrates excellent photosynaptic behavior.
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Affiliation(s)
- Kwang Hoon Jung
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Changbong Yeon
- Thin Film Materials Development Team, Soulbrain, Gongdan-Gil, Gongju 14-102, Republic of Korea
| | - Junjae Yang
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
- Department of Advanced Device Technology, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Ye Ji Cheon
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Jung Wook Lim
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
- Department of Advanced Device Technology, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Sun Jin Yun
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
- Department of Advanced Device Technology, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
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21
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Abstract
The expeditious development of information technology has led to the rise of artificial intelligence (AI). However, conventional computing systems are prone to volatility, high power consumption, and even delay between the processor and memory, which is referred to as the von Neumann bottleneck, in implementing AI. To address these issues, memristor-based neuromorphic computing systems inspired by the human brain have been proposed. A memristor can store numerous values by changing its resistance and emulate artificial synapses in brain-inspired computing. Here, we introduce six types of memristors classified according to their operation mechanisms: ionic migration, phase change, spin, ferroelectricity, intercalation, and ionic gating. We review how memristor-based neuromorphic computing can learn, infer, and even create, using various artificial neural networks. Finally, the challenges and perspectives in the competing memristor technology for neuromorphic computing systems are discussed.
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Affiliation(s)
- Seung Ju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Sang Bum Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
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22
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Huang H, Liu N, Wang X, Luo Q, Huang X, Wang X, Zhong M, Zhang H. DFT calculation of hydrothermal mechanism on preparation of MoS 2. J Mol Model 2020; 26:257. [PMID: 32886185 DOI: 10.1007/s00894-020-04521-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 08/26/2020] [Indexed: 11/27/2022]
Abstract
Basing on the simplest hydrothermal system containing deionized water, hexa-ammonium molybdate, and thiourea, hydrothermal mechanism on preparation of MoS2 was studied by DFT calculation. Hydrothermal process was divided into four steps which covered ionization equilibrium, the hydrolysis of CS(NH2)2, the formation of intermediates, and the formation of MoS2. Ionization equilibrium occurs at normal condition and determines the existence of Mo in the form of molybdic acid. Thiourea hydrolysis is rate-determining step in the process of hydrothermal which contains 10 elementary reactions. The formation of intermediates includes hydrogen transfer, dehydration, and vulcanization three steps which contain 18 elementary reactions, and the energy barrier of vulcanization is the highest. The formation of MoS2 is divided into two steps, the first step is that MoO(OH)(SH)3.H2O reacts with MoO (SH)4.H2O to form layer MoS2, and the second step is a very fast process that can affect the morphology of the products.
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Affiliation(s)
- He Huang
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Na Liu
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Xueying Wang
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Qinglong Luo
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Xueli Huang
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China.
| | - Xuefeng Wang
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Mei Zhong
- College of Chemistry and Chemical Engineering, Xinjiang University, Urumqi, 830046, People's Republic of China
| | - Hongyu Zhang
- State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Qingdao, 266580, People's Republic of China
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23
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Lu J, Chen M, Dong L, Cai L, Zhao M, Wang Q, Li J. Molybdenum disulfide nanosheets: From exfoliation preparation to biosensing and cancer therapy applications. Colloids Surf B Biointerfaces 2020; 194:111162. [PMID: 32512311 DOI: 10.1016/j.colsurfb.2020.111162] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2020] [Revised: 05/21/2020] [Accepted: 05/30/2020] [Indexed: 01/11/2023]
Abstract
Over the past few decades, nanotechnology has developed rapidly. Various nanomaterials have been gradually applied in different fields. As a kind of two-dimensional (2D) layered nanomaterial with a graphene-like structure, molybdenum disulfide (MoS2) nanosheets have broad research prospects in the fields of tumor photothermal therapy, biosensors and other biomedical fields because of their unique band gap structure and physical, chemical and optical properties. In this paper, the latest research progress on MoS2 is briefly summarized. Several commonly used exfoliation methods for the preparation of MoS2 nanosheets are reviewed based on the studies in the past five years. Additionally, the current research status of MoS2 nanosheets in the field of biomedicine is introduced. At the end of this review, a brief overview of the limitations of MoS2 research and its future prospects in the field of biomedicine is also provided.
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Affiliation(s)
- Jiaying Lu
- Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu China; School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, China
| | - Mingyue Chen
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, China
| | - Lina Dong
- Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu China
| | - Lulu Cai
- Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu China
| | - Mingming Zhao
- Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu China
| | - Qi Wang
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, China
| | - Jingjing Li
- Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu China; School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, China.
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24
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Highly Stable and Flexible Memristive Devices Based on Polyvinylpyrrolidone: WS 2 Quantum Dots. Sci Rep 2020; 10:5793. [PMID: 32238861 PMCID: PMC7113290 DOI: 10.1038/s41598-020-62721-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2019] [Accepted: 01/19/2020] [Indexed: 11/08/2022] Open
Abstract
Tungsten disulfide (WS2) quantum dots (QDs) embedded in polyvinylpyrrolidone (PVP) based flexible memristive devices were prepared, and those devices exhibited typical bistable electrical switching and remarkable nonvolatile memristive behaviors. Maximum electricity ON/OFF ratio obtained from the current-voltage (I-V) curves of the device is close to 104. The set voltage of the device is +0.7 V, which effectively reduced the energy consumption. The retention times extracted from data for the devices were as large as 1 × 104 s, which points to these devices having nonvolatile characteristics. Moreover, the highly flexible characteristics of the devices were demonstrated by bending the devices. The carrier transport mechanisms were explained by fitting the I-V curves, and possible operating mechanisms of the devices can be described based on the electron trapping and detrapping processes. WS2 QDs uniformly dispersed in pure transparent N, N-Dimethylformamide (DMF) were obtained by using ultrasonication and a hydrothermal process in this work.
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25
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Rehman MM, Rehman HMMU, Gul JZ, Kim WY, Karimov KS, Ahmed N. Decade of 2D-materials-based RRAM devices: a review. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2020; 21:147-186. [PMID: 32284767 PMCID: PMC7144203 DOI: 10.1080/14686996.2020.1730236] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2019] [Revised: 02/12/2020] [Accepted: 02/12/2020] [Indexed: 06/01/2023]
Abstract
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe2, WS2 and WSe2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>108 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.
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Affiliation(s)
- Muhammad Muqeet Rehman
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | | | - Jahan Zeb Gul
- Department of Mechatronics & Biomedical Engineering, AIR University, Islamabad, Pakistan
| | - Woo Young Kim
- Faculty of Electronic Engineering, Jeju National University, Jeju, South Korea
| | - Khasan S Karimov
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | - Nisar Ahmed
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
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26
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Chen Y, Zhang G, Ji Q, Liu H, Qu J. Triggering of Low-Valence Molybdenum in Multiphasic MoS 2 for Effective Reactive Oxygen Species Output in Catalytic Fenton-like Reactions. ACS APPLIED MATERIALS & INTERFACES 2019; 11:26781-26788. [PMID: 31274282 DOI: 10.1021/acsami.9b05978] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Utilization of photocatalytic reactions to trigger persistent large-scale reactions could be an alternative path for practical solar energy conversion to relieve environmental pressure nowadays. We took the view that the photoinduction of transition states was critical for improving the activity of catalytic reactions. On the basis of theoretical predictions, the reaction Gibbs free energy of permonosulfate (PMS) activation can be rapidly reduced by molybdenum with low valence. We therefore constructed a multiphasic molybdenum dichalcogenide (MoS2) heterostructure-based photosystem that enabled generation of Mo transition states by visible light excitation. According to combination results of electron paramagnetic resonance, photoelectrochemical analysis, and X-ray photoelectron spectroscopy, we confirmed that the optimized 2H/1T heterojunction permitted the transport of excited interfacial electrons from the semiconductive 2H phase to the metallic 1T phase, and synchronously partially reduced Mo(IV) to Mo(III) at the interface. This intensified the charge transfer between the MoS2 and PMS-containing solution, thereby efficiently splitting the PMS molecules into •OH and SO4•- radicals. In this system, a type of refractory herbicide, 2,4-dichlorophenoxyacetic acid (2,4-D), can be degraded within 60 min at a rate constant of 6.20 × 10-2 min-1 using multiphasic MoS2 with a 1T/2H ratio of 1:1.
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Affiliation(s)
- Yu Chen
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences , Chinese Academy of Sciences , Beijing 100085 , China
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment , Tsinghua University , Beijing 100084 , China
- University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Gong Zhang
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment , Tsinghua University , Beijing 100084 , China
| | - Qinghua Ji
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment , Tsinghua University , Beijing 100084 , China
| | - Huijuan Liu
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment , Tsinghua University , Beijing 100084 , China
| | - Jiuhui Qu
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences , Chinese Academy of Sciences , Beijing 100085 , China
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment , Tsinghua University , Beijing 100084 , China
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27
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Zhang L, Gong T, Wang H, Guo Z, Zhang H. Memristive devices based on emerging two-dimensional materials beyond graphene. NANOSCALE 2019; 11:12413-12435. [PMID: 31231746 DOI: 10.1039/c9nr02886b] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
With the explosion of data in the information universe and the approaching of fundamental limits in silicon-based flash memories, the exploration of new device architectures and alternative materials is necessary for next-generation memory technology. Accordingly, emerging two-dimensional (2D) material-based memristive devices have attracted increasing attention due to their unique properties and great potential in flexible and wearable devices, and even neuromorphic computing systems. Herein, we provide an overview of the recent progress on memristive devices based on 2D materials beyond graphene. The device structures and choice of active materials and electrodes materials are summarized for various types of 2D material-based memristive devices. Following the discussion and classification on the device performances and mechanisms, the challenges and perspectives on future research based on 2D materials are also presented.
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Affiliation(s)
- Lei Zhang
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
| | - Tian Gong
- Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
| | - Huide Wang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Shenzhen University, Shenzhen 518060, China.
| | - Zhinan Guo
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Shenzhen University, Shenzhen 518060, China.
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Shenzhen University, Shenzhen 518060, China.
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28
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Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices. Carbohydr Polym 2019; 214:213-220. [DOI: 10.1016/j.carbpol.2019.03.040] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2018] [Revised: 03/07/2019] [Accepted: 03/12/2019] [Indexed: 12/14/2022]
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29
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Chen Y, Zhang G, Liu H, Qu J. Confining Free Radicals in Close Vicinity to Contaminants Enables Ultrafast Fenton‐like Processes in the Interspacing of MoS
2
Membranes. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201903531] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Yu Chen
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences Chinese Academy of Sciences Beijing 100085 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Center for Water and Ecology State Key Joint Laboratory of Environment Simulation and Pollution Control School of Environment Tsinghua University Beijing 100084 China
| | - Gong Zhang
- Center for Water and Ecology State Key Joint Laboratory of Environment Simulation and Pollution Control School of Environment Tsinghua University Beijing 100084 China
| | - Huijuan Liu
- Center for Water and Ecology State Key Joint Laboratory of Environment Simulation and Pollution Control School of Environment Tsinghua University Beijing 100084 China
| | - Jiuhui Qu
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences Chinese Academy of Sciences Beijing 100085 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Center for Water and Ecology State Key Joint Laboratory of Environment Simulation and Pollution Control School of Environment Tsinghua University Beijing 100084 China
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30
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Chen Y, Zhang G, Liu H, Qu J. Confining Free Radicals in Close Vicinity to Contaminants Enables Ultrafast Fenton-like Processes in the Interspacing of MoS 2 Membranes. Angew Chem Int Ed Engl 2019; 58:8134-8138. [PMID: 31020744 DOI: 10.1002/anie.201903531] [Citation(s) in RCA: 184] [Impact Index Per Article: 36.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Indexed: 11/10/2022]
Abstract
Heterogenous Fenton-like reactions are frequently proposed for treating persistent pollutants through the generation of reactive radicals. Despite great efforts to optimize catalyst activity, their broad application in practical settings has been restricted by the low efficiency of hydrogen peroxide or persulfate decomposition as well as ultrafast self-quenching of the activated radicals. Theoretical calculations predicted that two-dimensional (2D) metallic 1T phase MoS2 materials with exposed (001) surfaces and (100) edges should have remarkable affinity towards crucial intermediates in the peroxymonosulfate (PMS) activation process. X-ray photoelectron spectroscopy and in situ Raman spectroscopy were used to show that the exposed metallic Mo sites accelerate the rate-limiting step of electron transfer. A lamellar membrane made from a stack of 2D MoS2 with tunable interspacing was then designed as the catalyst. The non-linear transport between the MoS2 nanolayers leads to high water diffusivity so that the short-lived reactive radicals efficiently oxidize contaminants.
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Affiliation(s)
- Yu Chen
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085, China.,University of Chinese Academy of Sciences, Beijing, 100049, China.,Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing, 100084, China
| | - Gong Zhang
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing, 100084, China
| | - Huijuan Liu
- Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing, 100084, China
| | - Jiuhui Qu
- Key Laboratory of Drinking Water Science and Technology Research Centre for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085, China.,University of Chinese Academy of Sciences, Beijing, 100049, China.,Center for Water and Ecology, State Key Joint Laboratory of Environment Simulation and Pollution Control, School of Environment, Tsinghua University, Beijing, 100084, China
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31
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Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer. Sci Rep 2019; 9:6761. [PMID: 31043694 PMCID: PMC6494838 DOI: 10.1038/s41598-019-43279-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2018] [Accepted: 04/16/2019] [Indexed: 11/08/2022] Open
Abstract
In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 107 that might be attributed to the high charge trapped in molybdenum disulphide (MoS2) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS2-GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.
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32
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Singh E, Singh P, Kim KS, Yeom GY, Nalwa HS. Flexible Molybdenum Disulfide (MoS 2) Atomic Layers for Wearable Electronics and Optoelectronics. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11061-11105. [PMID: 30830744 DOI: 10.1021/acsami.8b19859] [Citation(s) in RCA: 91] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS2) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS2 atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS2 atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS2 FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS2 device structures. The photoluminescence (PL) of MoS2 atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS2 transistors. The review discusses the overall recent progress made in developing MoS2 based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.
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Affiliation(s)
- Eric Singh
- Department of Computer Science , Stanford University , Stanford , California 94305 , United States
| | - Pragya Singh
- Department of Electrical Engineering and Computer Science , National Chiao Tung University , Hsinchu 30010 , Taiwan , R.O.C
| | - Ki Seok Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
- SKKU Advanced Institute of Nano Technology , Sungkyunkwan University , 2066 Seobu-ro, Jangan-gu , Suwon-si , Gyeonggi-do 16419 , South Korea
| | - Hari Singh Nalwa
- Advanced Technology Research , 26650 The Old Road, Suite 208 , Valencia , California 91381 , United States
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33
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Bertolazzi S, Bondavalli P, Roche S, San T, Choi SY, Colombo L, Bonaccorso F, Samorì P. Nonvolatile Memories Based on Graphene and Related 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806663. [PMID: 30663121 DOI: 10.1002/adma.201806663] [Citation(s) in RCA: 103] [Impact Index Per Article: 20.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2018] [Revised: 11/19/2018] [Indexed: 05/19/2023]
Abstract
The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.
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Affiliation(s)
- Simone Bertolazzi
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000, Strasbourg, France
| | - Paolo Bondavalli
- Chemical and Multifunctional Materials Lab, Thales Research and Technology, 91767, Palaiseau, France
| | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology, CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193, Barcelona, Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats, 08070, Barcelona, Spain
| | - Tamer San
- Texas Instruments, Dallas, TX, 75243, USA
| | - Sung-Yool Choi
- School of Electrical Engineering, Graphene/2D Materials Research Center, KAIST, 34141, Daejeon, Korea
| | - Luigi Colombo
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Francesco Bonaccorso
- Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163, Genova, Italy
- BeDimensional Spa, Via Albisola 121, 16163, Genova, Italy
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, 67000, Strasbourg, France
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Gao S, Yi X, Shang J, Liu G, Li RW. Organic and hybrid resistive switching materials and devices. Chem Soc Rev 2019; 48:1531-1565. [DOI: 10.1039/c8cs00614h] [Citation(s) in RCA: 211] [Impact Index Per Article: 42.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.
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Affiliation(s)
- Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Xiaohui Yi
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Gang Liu
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
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Choi JY, Yu HC, Lee J, Jeon J, Im J, Jang J, Jin SW, Kim KK, Cho S, Chung CM. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device. Polymers (Basel) 2018; 10:E901. [PMID: 30960826 PMCID: PMC6403621 DOI: 10.3390/polym10080901] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2018] [Revised: 08/04/2018] [Accepted: 08/09/2018] [Indexed: 11/28/2022] Open
Abstract
2,6-Diaminoanthracene (AnDA)-functionalized graphene oxide (GO) (AnDA-GO) was prepared and used to synthesize a graphene oxide-based polyimide (PI-GO) by the in-situ polymerization method. A PI-GO nanocomposite thin film was prepared and characterized by infrared (IR) spectroscopy, thermogravimetric analysis (TGA) and UV-visible spectroscopy. The PI-GO film was used as a memory layer in the fabrication of a resistive random access memory (RRAM) device with aluminum (Al) top and indium tin oxide (ITO) bottom electrodes. The device showed write-once-read-many-times (WORM) characteristics with a high ON/OFF current ratio (Ion/Ioff = 3.41 × 10⁸). This excellent current ratio was attributed to the high charge trapping ability of GO. In addition, the device had good endurance until the 100th cycle. These results suggest that PI-GO is an attractive candidate for applications in next generation nonvolatile memory.
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Affiliation(s)
- Ju-Young Choi
- Department of Chemistry, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Hwan-Chul Yu
- Department of Chemistry, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Jeongjun Lee
- Department of Physics, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Jihyun Jeon
- Department of Physics, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Jaehyuk Im
- Department of Physics, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Junhwan Jang
- Department of Physics, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Seung-Won Jin
- Department of Chemistry, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Kyoung-Kook Kim
- Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 15073, Korea.
| | - Soohaeng Cho
- Department of Physics, Yonsei University, Wonju, Gangwon-do 26493, Korea.
| | - Chan-Moon Chung
- Department of Chemistry, Yonsei University, Wonju, Gangwon-do 26493, Korea.
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Lv W, Wang H, Jia L, Tang X, Lin C, Yuwen L, Wang L, Huang W, Chen R. Tunable Nonvolatile Memory Behaviors of PCBM-MoS 2 2D Nanocomposites through Surface Deposition Ratio Control. ACS APPLIED MATERIALS & INTERFACES 2018; 10:6552-6559. [PMID: 29377670 DOI: 10.1021/acsami.7b16878] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Efficient preparation of single-layer two-dimensional (2D) transition metal dichalcogenides, especially molybdenum disulfide (MoS2), offers readily available 2D surface in nanoscale to template various materials to form nanocomposites with van der Waals heterostructures (vdWHs), opening up a new dimension for the design of functional electronic and optoelectronic materials and devices. Here, we report the tunable memory properties of the facilely prepared [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-MoS2 nanocomposites in a conventional diode device structure, where the vdWHs dominate the electric characteristics of the devices for various memory behaviors depending on different surface deposition ratios of PCBM on MoS2 nanosheets. Both nonvolatile WORM and flash memory devices have been realized using the new developed PCBM-MoS2 2D composites. Specially, the flash characteristic devices show rewritable resistive switching with low switching voltages (∼2 V), high current on/off ratios (∼3 × 102), and superior electrical bistability (>104 s). This research, through successfully allocating massive vdWHs on the MoS2 surface for organic/inorganic 2D nanocomposites, illustrates the great potential of 2D vdWHs in rectifying the electronic properties for high-performance memory devices and paves a way for the design of promising 2D nanocomposites with electronically active vdWHs for advanced device applications.
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Affiliation(s)
- Wenzhen Lv
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Honglei Wang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Linlin Jia
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Xingxing Tang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Cheng Lin
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Lihui Yuwen
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Lianhui Wang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
| | - Runfeng Chen
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts and Telecommunications , Wenyuan Road, Nanjing 210023, P. R. China
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Zeng M, Xiao Y, Liu J, Yang K, Fu L. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control. Chem Rev 2018; 118:6236-6296. [DOI: 10.1021/acs.chemrev.7b00633] [Citation(s) in RCA: 298] [Impact Index Per Article: 49.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Affiliation(s)
- Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yao Xiao
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
| | - Jinxin Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Kena Yang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
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38
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Huang L, Wei Q, Xu X, Shi C, Liu X, Zhou L, Mai L. Methyl-functionalized MoS2 nanosheets with reduced lattice breathing for enhanced pseudocapacitive sodium storage. Phys Chem Chem Phys 2017; 19:13696-13702. [DOI: 10.1039/c7cp00990a] [Citation(s) in RCA: 54] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Methyl-functionalized MoS2 (M-MoS2) nanosheets have been synthesized via a facile second solvothermal method.
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Affiliation(s)
- Lei Huang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Qiulong Wei
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Xiaoming Xu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Changwei Shi
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Xue Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Liang Zhou
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
| | - Liqiang Mai
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing
- International School of Materials Science and Engineering
- Wuhan University of Technology
- Wuhan 430070
- China
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39
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Zhang P, Xu B, Gao C, Chen G, Gao M. Facile Synthesis of Co 9Se 8 Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device. ACS APPLIED MATERIALS & INTERFACES 2016; 8:30336-30343. [PMID: 27750409 DOI: 10.1021/acsami.6b09616] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Uniform Co9Se8 quantum dots (CSQDs) were successfully synthesized through a facile solvothermal method. The obtained CSQDs with average size of 3.2 ± 0.1 nm and thickness of 1.8 ± 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.
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Affiliation(s)
- Peng Zhang
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China
- Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China
| | - Benhua Xu
- Key Laboratory of Nonferrous Metals Chemistry and Resources Utilization of Gansu Province and State Key Laboratory of Applied Organic Chemistry, College of Chemistry and Chemical Engineering, Lanzhou University , Lanzhou 730000, P. R. China
| | - Cunxu Gao
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China
- Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China
| | - Guilin Chen
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China
- Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China
| | - Meizhen Gao
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China
- Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China
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