Advances in MoS2-Based Field Effect Transistors (FETs)

Unraveling energetics and states of adsorbing oxygen species with MoS2 for modulated work function

MoS2 and related transition metal dichalcogenides (TMDs) have recently been reported as having extensive applications in nanoelectronics and catalysis because of their unique physical and chemical properties. However, one practical challenge for MoS2-based applications arises from the easiness of oxygen contamination, which is likely to degrade performance. To this end, understanding the states and related energetics of adsorbed oxygen is critical. Herein, we identify various states of oxygen species adsorbed on the MoS2 surface with first-principles calculations. We reveal a "dissociative" mechanism through which a physisorbed oxygen molecule trapped at a sulfur vacancy can split into two chemisorbed oxygen atoms, namely a top-anchoring oxygen and a substituting oxygen, both of which show no adsorbate induced states in the bandgap. The electron and hole masses show an asymmetric effect in response to oxygen species with the hole mass being more sensitive to oxygen content due to a strong hybridization of oxygen states in the valence band edge of MoS2. Alteration of oxygen content allows modulation of the work function up to 0.5 eV, enabling reduced Schottky barriers in MoS2/metal contact. These results show that oxygen doping on MoS2 is a promising method for sulfur vacancy healing, carrier mass controlling, contact resistance reduction, and anchoring of surface electron dopants. Our study suggests that tuning the chemical composition of oxygen is viable for modulating the electronic properties of MoS2 and likely other chalcogen-incorporated TMDs, which offers promise for new optoelectronic applications.

Development of Self-Doped Monolayered 2D MoS2 for Enhanced Photoresponsivity

Transition metal dichalcogenides (TMDs) exist in two distinct phases: the thermodynamically stable trigonal prismatic (2H) and the metastable octahedral (1T) phase. Phase engineering has emerged as a potent technique for enhancing the performance of TMDs in optoelectronics applications. Nevertheless, understanding the mechanism of phase transition in TMDs and achieving large-area synthesis of phase-controlled TMDs continue to pose significant challenges. This study presents the synthesis of large-area monolayered 2H-MoS2 and mixed-phase 1T/2H-MoS2 by controlling the growth temperature in the chemical vapor deposition (CVD) method without use of a catalyst. The field-effect transistors (FETs) devices fabricated with 1T/2H-MoS2 mixed-phase show an on/off ratio of 107. Photo response devices fabricated with 1T/2H-MoS2 mixed-phase show ≈55 times enhancement in responsivity (from 0.32 to 17.4 A W-1) and 102 times increase in the detectivity (from 4.1 × 1010 to 2.48 × 1012 cm Hz W-1) compare to 2H-MoS2. Introducing the metallic 1T phase within the 2H phase contributes additional carriers to the material, which prevents the electron-hole recombination and thereby increases the carrier density in the 1T/2H-MoS2 mixed-phase in comparison to 2H-MoS2. This work provides insights into the self-doping effects of 1T phase in 2H MoS2, enabling the tuning of 2D TMDs properties for optoelectronic applications.

Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device

Transition metal disulfide compounds (TMDCs) emerges as the promising candidate for new-generation flexible (opto-)electronic device fabrication. However, the harsh growth condition of TMDCs results in the necessity of using hard dielectric substrates, and thus the additional transfer process is essential but still challenging. Here, an efficient strategy for preparation and easy separation-transfer of high-uniform and quality-enhanced MoS2 via the precursor pre-annealing on the designed graphene inserting layer is demonstrated. Based on the novel strategy, it achieves the intact separation and transfer of a 2-inch MoS2 array onto the flexible resin. It reveals that the graphene inserting layer not only enhances MoS2 quality but also decreases interfacial adhesion for easy separation-transfer, which achieves a high yield of ≈99.83%. The theoretical calculations show that the chemical bonding formation at the growth interface has been eliminated by graphene. The separable graphene serves as a photocarrier transportation channel, making a largely enhanced responsivity up to 6.86 mA W-1, and the photodetector array also qualifies for imaging featured with high contrast. The flexible device exhibits high bending stability, which preserves almost 100% of initial performance after 5000 cycles. The proposed novel TMDCs growth and separation-transfer strategy lightens their significance for advances in curved and wearable (opto-)electronic applications.

The Impact of Microwave Annealing on MoS2 Devices Assisted by Neural Network-Based Big Data Analysis

Microwave annealing, an emerging annealing method known for its efficiency and low thermal budget, has established a foundational research base in the annealing of molybdenum disulfide (MoS2) devices. Typically, to obtain high-quality MoS2 devices, mechanical exfoliation is commonly employed. This method's challenge lies in achieving uniform film thickness, which limits the use of extensive data for studying the effects of microwave annealing on the MoS2 devices. In this experiment, we utilized a neural network approach based on the HSV (hue, saturation, value) color space to assist in distinguishing film thickness for the fabrication of numerous MoS2 devices with enhanced uniformity and consistency. This method allowed us to precisely assess the impact of microwave annealing on device performance. We discovered a relationship between the device's electrical performance and the annealing power. By analyzing the statistical data of these electrical parameters, we identified the optimal annealing power for MoS2 devices as 700 W, providing insights and guidance for the microwave annealing process of two-dimensional materials.

Strain-Assisted Phase Transformation in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional polymorphic transition-metal dichalcogenides have drawn attention for their diverse applications. This work explores the complex interplay between strain-induced phase transformation and crack growth behavior in annealed nanocrystalline MoS2. Employing molecular dynamics (MD) simulations, this research focuses on the effect of grain size, misorientation, and annealing on phase evolution and their effects on the mechanical behavior of MoS2. First, examining phase transformation in monocrystalline MoS2 under various stress states reveals distinct behaviors depending on the initial phase (1T or 2H) and crystallographic orientation with respect to loading directions. Notably, transformation from a layered hexagonal to a body-centered tetragonal structure is more noticeable when strain in a zigzag direction is applied to the 1T sample. As such, single crystalline MoS2 with a 1T phase exhibits a 16% lower fracture stress in the armchair direction compared to that with a 2H phase. On the other hand, the 1T phase shows a 5% higher phonon lifetime compared to the 2H phase with similar phonon group velocities. Next, the influence of thermal energy and mechanical stress on the phase transformation of nanocrystalline MoS2 is investigated through annealing and quenching cycles, uncovering 60 and 44% irreversibility of phase transformation for an average grain size of 3 and 11 nm, respectively. Besides, the evolution of nanocrystalline samples with different initial phases and grain sizes is studied under uniaxial and biaxial stress. This study shows an inverse pseudo-Hall-Petch effect with exponents of 0.11 and 0.09 for 2H and 1T, respectively. The study reveals that phase transformation can occur concurrently with crack initiation and propagation with the 1T phase exhibiting a 19% lower grain size sensitivity of fracture stress compared to the 2H phase.

MoS2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation

MoS2-based field-effect transistors (FETs) and, in general, transition metal dichalcogenide channels are fundamentally limited by high contact resistance (RC) and intrinsic defects, which results in low drive current and lower carrier mobilities, respectively. This work addresses these issues using a technique based on CF4 plasma treatment in the contacts and further cyclic field-assisted drift and activation of the fluorine ions (F-), which get introduced into the contact region during the CF4 plasma treatment. The F- ions are activated using cyclic pulses applied across the source-drain (S/D) contacts, which leads to their migration to the contact edges via the channel. Further, using ab initio molecular dynamics and density functional theory simulations, these F- ions are found to bond at sulfur (S) vacancies, resulting in their passivation and n-type doping in the channel and near the S/D contacts. An increase in doping results in the narrowing of the Schottky barrier width and a reduction in RC by ∼90%. Additionally, the passivation of S vacancies in the channel enhances the mobility of the FET by ∼150%. The CF4 plasma treatment in contacts and further cyclic field-assisted activation of F- ions resulted in an ON-current (ION) improvement by ∼90% and ∼480% for exfoliated and CVD-grown MoS2, respectively. Moreover, this improvement in ION has been achieved without any deterioration in the ION/IOFF, which was found to be >7-8 orders.

Aptamer-functionalized field-effect transistor biosensors for disease diagnosis and environmental monitoring

Nano-biosensors that are composed of recognition molecules and nanomaterials have been extensively utilized in disease diagnosis, health management, and environmental monitoring. As a type of nano-biosensors, molecular specificity field-effect transistor (FET) biosensors with signal amplification capability exhibit prominent advantages including fast response speed, ease of miniaturization, and integration, promising their high sensitivity for molecules detection and identification. With intrinsic characteristics of high stability and structural tunability, aptamer has become one of the most commonly applied biological recognition units in the FET sensing fields. This review summarizes the recent progress of FET biosensors based on aptamer functionalized nanomaterials in medical diagnosis and environmental monitoring. The structure, sensing principles, preparation methods, and functionalization strategies of aptamer modified FET biosensors were comprehensively summarized. The relationship between structure and sensing performance of FET biosensors was reviewed. Furthermore, the challenges and future perspectives of FET biosensors were also discussed, so as to provide support for the future development of efficient healthcare management and environmental monitoring devices.

Large area MoS2 thin film growth by direct sulfurization

In this study, we present the growth of monolayer MoS₂ (molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS₂ film was grown by direct sulfurization. First, the growth of MoS₂ was observed under an optical microscope. The number of MoS₂ layers was analyzed by Raman spectrum, atomic force microscope (AFM), and photoluminescence spectroscopy (PL) measurement. Different sapphire substrate regions have different growth conditions of MoS₂. The growth of MoS₂ is optimized by controlling the amount and location of precursors, adjusting the appropriate growing temperature and time, and establishing proper ventilation. Experimental results show the successful growth of a large-area single-layer MoS₂ on a sapphire substrate through direct sulfurization under a suitable environment. The thickness of the MoS₂ film determined by AFM measurement is about 0.73 nm. The peak difference between the Raman measurement shift of 386 and 405 cm^-1 is 19.1 cm^-1, and the peak of PL measurement is about 677 nm, which is converted into energy of 1.83 eV, which is the size of the direct energy gap of the MoS₂ thin film. The results verify the distribution of the number of grown layers. Based on the observation of the optical microscope (OM) images, MoS₂ continuously grows from a single layer of discretely distributed triangular single-crystal grains into a single-layer large-area MoS₂ film. This work provides a reference for growing MoS₂ in a large area. We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors.

Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2

Two-dimensional (2D) semiconducting materials, such as MoS₂, are widely studied owing to their great potential in advanced electronic devices. However, MoS₂ films grown using chemical vapor deposition (CVD) exhibit lower-than-expected properties owing to numerous defects. Among them, grain boundary (GB) is a critical parameter that determines electrical and mechanical properties of MoS₂. Herein, we report the gate-tunable electrostatic friction of GBs in CVD-grown MoS₂. Using atomic force microscopy (AFM), we found that electrostatic friction of MoS₂ is generated by the Coulomb interaction between tip and carriers of MoS₂, which is associated with the local band structure of GBs. Therefore, electrostatic friction is enhanced by localized charge carrier distribution at GB, which is linearly related to the loading force of the tip. Our study shows a strong correlation between electrostatic friction and localized band structure in MoS₂ GB, providing a novel method for identifying and characterizing GBs of polycrystalline 2D materials.

Interfacial contact barrier and charge carrier transport of MoS2/metal(001) heterostructures

The rapid rise of two-dimensional (2D) materials has aroused increasing interest in the fields of microelectronics and optoelectronics; various types of 2D van der Waals heterostructures (vdWHs), especially those based on MoS₂, have been widely investigated in theory and experiment. However, the interfacial properties of MoS₂ and the uncommon crystal surface of traditional three-dimensional (3D) metals are yet to be explored. In this paper, we studied heterostructures composed of MoS₂ and metal(001) slabs, based on the first-principles calculations, and we uncovered that MoS₂/Au(001) and MoS₂/Ag(001) vdWHs reveal Schottky contacts, and MoS₂/Cu(001) belongs to Ohmic contact and possesses ultrahigh electron tunneling probability at the equilibrium distance. Thus, the MoS₂/Cu(001) heterostructure exhibits the best contact performance. Further investigations demonstrate that external longitudinal strain can modulate interfacial contact to engineer the Schottky-Ohmic contact transition and regulate interfacial charge transport. We believe that it is a general strategy to exploit longitudinal strain to improve interfacial contact performance to design and fabricate a multifunctional MoS₂-based electronic device.

Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors

Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

Casted MoS2 nanostructures and their Raman properties

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been widely investigated for optoelectronic applications. Here, by employing the nanocasting method, molybdenum disulfide (MoS₂) nanostructures, including supercrystals, nanoparticles and nanowires, are synthesized with curved features by changing the precursor concentration and template types. The Raman properties of different MoS₂ nanostructures are investigated by varying the laser power under both resonant and non-resonant excitations. The defect disorder induced LA(M) mode and other silent Raman modes in planar 2D materials are clearly observed under the resonant excitation. We believe that the varying optical properties of TMDC nanostructures will greatly broaden the optoelectronic applications of 2D materials.

Catalytic Hydrogenation of CO2 to Methanol: A Review

High-efficiency utilization of CO2 facilitates the reduction of CO2 concentration in the global atmosphere and hence the alleviation of the greenhouse effect. The catalytic hydrogenation of CO2 to produce value-added chemicals exhibits attractive prospects by potentially building energy recycling loops. Particularly, methanol is one of the practically important objective products, and the catalytic hydrogenation of CO2 to synthesize methanol has been extensively studied. In this review, we focus on some basic concepts on CO2 activation, the recent research advances in the catalytic hydrogenation of CO2 to methanol, the development of high-performance catalysts, and microscopic insight into the reaction mechanisms. Finally, some thinking on the present research and possible future trend is presented.

Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance

P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photodetectors will limit the detectivity. Herein, we synthesized small-diameter single-crystalline p-type SnS nanowires (NWs) and then fabricated single SnS NW photodetectors and phototransistors. The device exhibits low noise and low dark current, and its noise current power is as low as 2.4 × 10^-28A². Under 830 nm illumination and low power density of 0.12 mW cm^-2, the photoconductive gain, responsivity and detectivity of the photodetector are as high as 3.9 × 10², 2.6 × 10²A W^-1and 1.8 × 10¹³Jones, respectively, at zero gate voltage. The rise and fall time of response are about 9.6 and 14 ms. The experimental results show that the small-diameter p-type SnS NWs have broad application prospects in high-performance and low-power photodetectors with high sensitivity, fast response speed and wide spectrum detection in the future.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Evolution of low-dimensional material-based field-effect transistors

Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.

High-performance ambipolar MoS2transistor enabled by indium edge contacts

The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS₂)-based devices has been a significant fabrication impediment to their potential applications. Here, we have demonstrated the advantage of 1D indium metal contact with fully encapsulated MoS₂within hexagonal boron nitride. The electrical measurements of the device exhibit ambipolar transport with an on/off ratio of102for holes and107for electrons. The device exhibits high field-effect mobility of40.7cm2V-1s-1at liquid nitrogen temperature. Furthermore, we have also analysed the charge-transport mechanism at the interface and have calculated the Schottky barrier height from the temperature-dependent measurement. These results are highly promising for the use of air-sensitive material heterostructure and large-scale design of trending flexible, transparent electronic wearable devices.

Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 Field-Effect Transistors

Clockwise to anticlockwise hysteresis crossover in current-voltage transfer characteristics of field-effect transistors (FETs) with graphene and MoS₂ channels holds significant promise for nonvolatile memory applications. However, such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS₂ FETs using a gate-drain underlap design to induce a differential response from traps near the MoS₂-HfO₂ channel-gate dielectric interface, also referred to as border traps, to applied gate bias. The appearance of trap-driven anticlockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS₂ channel flake. The underlap design also enables room temperature tuning of the anticlockwise hysteresis window (by 140×) as well as the crossover gate voltage (by 2.6×) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 °C, and 65 °C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO₂ traps to the clockwise and anticlockwise hysteresis.

Functional inks and extrusion-based 3D printing of 2D materials: a review of current research and applications

Graphene and related 2D materials offer an ideal platform for next generation disruptive technologies and in particular the potential to produce printed electronic devices with low cost and high throughput. Interest in the use of 2D materials to create functional inks has exponentially increased in recent years with the development of new ink formulations linked with effective printing techniques, including screen, gravure, inkjet and extrusion-based printing towards low-cost device manufacturing. Exfoliated, solution-processed 2D materials formulated into inks permits additive patterning onto both rigid and conformable substrates for printed device design with high-speed, large-scale and cost-effective manufacturing. Each printing technique has some sort of clear advantages over others that requires characteristic ink formulations according to their individual operational principles. Among them, the extrusion-based 3D printing technique has attracted heightened interest due to its ability to create three-dimensional (3D) architectures with increased surface area facilitating the design of a new generation of 3D devices suitable for a wide variety of applications. There still remain several challenges in the development of 2D material ink technologies for extrusion printing which must be resolved prior to their translation into large-scale device production. This comprehensive review presents the current progress on ink formulations with 2D materials and their broad practical applications for printed energy storage devices and sensors. Finally, an outline of the challenges and outlook for extrusion-based 3D printing inks and their place in the future printed devices ecosystem is presented.

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

Superhigh flexibility and out-of-plane piezoelectricity together with strong anharmonic phonon scattering induced extremely low lattice thermal conductivity in hexagonal buckled CdX (XS, Se) monolayers

Although CdX (X = S, Se) has been mostly studied in the field of photocatalysis, photovoltaics, their intrinsic properties, such as, mechanical, piezoelectric, electron and phonon transport properties have been completely overlooked in buckled CdX monolayers. Ultra-low lattice thermal conductivity [1.08 W m-1K-1(0.75 W m-1K-1)] and high p-type Seebeck coefficient [1300μV K-1(850μV K-1)] in CdS (CdSe) monolayers have been found in this work based on first-principles DFT coupled to semi-classical Boltzmann transport equations, combining both the electronic and phononic transport. The dimensionless thermoelectric figure of merit is calculated to be 0.78 (0.5) in CdS (CdSe) monolayers at room temperature, which is comparable to that of two-dimensional (2D) tellurene (0.8), arsenene and antimonene (0.8), indicating its great potential for applications in 2D thermoelectrics. Such a low lattice thermal conductivity arise from the participation of both acoustic [91.98% (89.22%)] and optical modes [8.02% (10.78%)] together with low Debye temperature [254 K (187 K)], low group velocity [4 km s-1(3 km s-1)] in CdS (CdSe) monolayers, high anharmonicity and short phonon lifetime. Substantial cohesive energy (∼4-5 eV), dynamical and mechanical stability of the monolayers substantiate the feasibility in synthesizing the single layers in experiments. The inversion symmetry broken along thezdirection causes out-of-plane piezoelectricity. |d33| ∼ 21.6 pm V-1, calculated in CdS monolayer is found to be the highest amongst structures having atomic-layer thickness. Superlow Young's modulus ∼41 N m-1(31 N m-1) in CdS (CdSe) monolayers, which is comparable to that of planar CdS (29 N m-1) and TcTe2(34 N m-1), is an indicator of its superhigh flexibility. Direct semiconducting band gap, high carrier mobility (∼500 cm2V-1s-1) and superhigh flexibility in CdX monolayers signify its gigantic potential for applications in ultrathin, stretchable and flexible nanoelectronics. The all-round properties can be synergistically combined together in futuristic applications in nano-piezotronics as well.

Mechanoluminescent, Air-Dielectric MoS2 Transistors as Active-Matrix Pressure Sensors for Wide Detection Ranges from Footsteps to Cellular Motions

Tactile pressure sensors as flexible bioelectronic devices have been regarded as the key component for recently emerging applications in electronic skins, health-monitoring devices, or human-machine interfaces. However, their narrow range of sensible pressure and their difficulty in forming high integrations represent major limitations for various potential applications. Herein, we report fully integrated, active-matrix arrays of pressure-sensitive MoS₂ transistors with mechanoluminescent layers and air dielectrics for wide detectable range from footsteps to cellular motions. The inclusion of mechanoluminescent materials as well as air spaces can increase the sensitivity significantly over entire pressure regimes. In addition, the high integration capability of these active-matrix sensory circuitries can enhance their spatial resolution to the level sufficient to analyze the pressure distribution in a single cardiomyocyte. We envision that these wide-range pressure sensors will provide a new strategy toward next-generation electronics at biomachine interfaces to monitor various mechanical and biological phenomena at single-cell resolution.

Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes

We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS₂ (molybdenum disulfide) flakes on a SiO₂/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS₂, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS₂ channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS₂ flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V/μm at a cathode–anode separation distance of 900 nm.

A new metalorganic chemical vapor deposition process for MoS2 with a 1,4-diazabutadienyl stabilized molybdenum precursor and elemental sulfur

Crystalline MoS₂ thin films are deposited via MOCVD using a new molybdenum precursor, 1,4-di-tert-butyl-1,4-diazabutadienyl-bis(tert-butylimido)molybdenum(vi) [Mo(N^tBu)₂(^tBu₂DAD)], and elemental sulfur.

MoS2-enabled dual-mode optoelectronic biosensor using a water soluble variant of μ-opioid receptor for opioid peptide detection

Owing to their unique electrical and optical properties, two-dimensional transition metal dichalcogenides have been extensively studied for their potential applications in biosensing. However, simultaneous utilization of both optical and electrical properties has been overlooked, yet it can offer enhanced accuracy and detection versitility. Here, we demonstrate a dual-mode optoelectronic biosensor based on monolayer molybdenum disulfide (MoS₂) capable of producing simultaneous electrical and optical readouts of biomolecular signals. On a single platform, the biosensor exhibits a tunable photonic Fano-type optical resonance while also functioning as a field-effect transistor (FET) based on a optically transparent gate electrode. Furthermore, chemical vapor deposition grown MoS₂ provides a clean surface for direct immobilization of a water-soluble variant of the μ-opioid receptor (wsMOR), via a nickel ion-mediated linker chemistry. We utilize a synthetic opioid peptide to show the operation of the electronic and optical sensing modes. The responses of both modes exhibit a similar trend with dynamic ranges of four orders of magnitude and detection limits of <1 nM. Our work explores the potential of a versatile multimodal sensing platform enabled by monolayer MoS₂, since the integration of electrical and optical sensors on the same chip can offer flexibility in read-out and improve the accuracy in detection of low concentration targets.

Detection and discrimination of volatile organic compounds by noble metal nanoparticle functionalized MoS2 coated biodegradable paper sensors

In the current study, noble metal nanoparticle functionalized MoS₂ coated biodegradable low-cost paper sensors were fabricated for the selective detection of low concentrations of volatile organic compounds (VOCs).

A label-free aptasensor FET based on Au nanoparticle decorated Co3O4 nanorods and a SWCNT layer for detection of cardiac troponin T protein

Acute myocardial infarction (AMI) is a serious health problem that must be identified in its early stages. Considerable progress has been made in understanding the condition of AMI through ascertaining the role of biomarkers, such as myoglobin, cardiac troponin proteins (T and I), creatine kinase-MB, and fatty acid-binding protein (FABP). A field-effect transistor (FET) is an effective platform; however, innovations are required in all layers of the FET for it to become robust and highly sensitive. For the first time, we made use of the synergistic combination of noble metal nanoparticles (AuNPs) with Co₃O₄ for the detection of cardiac troponin T (cTnT) in a FET platform. We determined the morphology of Au-decorated Co₃O₄ NRs and their electronic properties by characterizing the channel layer using electron microscopies and transient measurements. Subsequently, we performed the detection of cardiac troponin T by immobilizing its complementary biotinylated DNA aptamer on the channel surface using a drop-casting method. To understand the changes in drain current caused by this interaction, we probed our SWCNT-Co₃O₄ NR transistor with limited gate and drain bias (≤1 V), achieving a sensitivity of 0.5 μA μg^-1 mL^-1 for the Au-decorated NRs. A 250% increase in the sensitivity and a limit of detection (LOD) of 0.1 μg mL^-1 were achieved by using this device. Finally, selectivity studies proved that this synergistic combination works well in the FET configuration for the successful detection of cTnT.

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

The effects of space radiation on the structural and electrical properties of MoS₂ field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 10¹² cm^-2) and 30 years (3.0 × 10¹² cm^-2) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS₂ FETs. The PL spectra before and after irradiation did not change significantly, while the [Formula: see text] and A_1g Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS₂. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS₂ FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO₂/MoS₂ interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS₂-based nano-electronic devices for future space applications.

Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal-oxide-semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p-n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼10⁶ and field-effect hole mobility of 329 cm² V^-1 s^-1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p-n junction diodes with MoS₂, which exhibit rectifying properties and excellent light response.

Quality enhancement of low temperature metal organic chemical vapor deposited MoS2: an experimental and computational investigation

Electronic quality of chemical vapor deposited MoS₂ is a function of crystallinity, which tends to decline with decrease in deposition temperature. Conventional thermal annealing can improve the quality but requires very high temperatures. In this study, we investigate a novel low temperature (room temperature to 400 °C) annealing process that exploits the electron wind force during passage of current. Here, moderate current density gives rise to atomic scale mechanical force whenever the electrons encounter defects in the lattice or grain boundaries (GBs). After hypothesizing that this force can significantly enhance defect mobility without any temperature field, we demonstrate the process using in situ transmission electron microscope and molecular dynamics simulation. Monolayer metal organic chemical vapor deposited MoS₂ deposited at 400 °C was post processed at temperature as low as 20 °C. Experimental results show five times enhancement in electrical conductivity, which is supported by electron diffraction patterns indicating significant grain growth. Discrete spots in diffraction indicate evolution of high crystallinity even at room temperature. Our computational model shows the mechanisms behind healing lattice defects as well as reorienting the GBs. The enhancement in microstructure of the specimen is also reflected in mechanical properties simulations on pre- and post-annealed specimens.

Thermal-Assisted Vertical Electron Injections in Few-Layer Pyramidal-Structured MoS2 Crystals

The interlayer screening effects and charge conduction mechanisms in atomically thin two-dimensional (2D) materials are crucial for electronics and optoelectronics applications. However, such effects remain largely unexplored in chemical vapor deposition (CVD)-grown molybdenum disulfide (MoS₂) crystals. Here, we report a controllable CVD-grown monolayer MoS₂ and layer-by-layer pyramidal-structured MoS₂ crystals with an oxidized Mo foil precursor. The interlayer screening effects and charge conduction mechanisms in the pyramidal-structured MoS₂ crystals are studied. Although the Fowler-Nordheim (FN) tunneling model is widely adopted to describe the vertical charge transport mechanism at the 2D semiconductor/bulk metal interface, we found that such a mechanism cannot satisfactorily explain the electrical measurement obtained from our CVD-grown MoS₂ samples. Instead, our analysis reveals that Richardson-Schottky (RS) emission is the dominant transport mechanism when V_bias < 1 V. Our findings provide a fundamental understanding of the charge conduction mechanism in CVD-grown MoS₂ crystals, which is crucial for development of MoS₂ electronics and optoelectronics devices.

Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

Schematic representation of the GIWAXS measurements on HA and VA MoS₂ layers.

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS₂ as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS₂, leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS₂ first blueshifts and then redshifts, which is likely due to the electron transfer from MoS₂ to the adsorbed O₂ at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS₂, attributed to the modified adsorption of atomic hydrogen at the defects.

Humate-assisted Synthesis of MoS2/C Nanocomposites via Co-Precipitation/Calcination Route for High Performance Lithium Ion Batteries

A facile, cost-effective, non-toxic, and surfactant-free route has been developed to synthesize MoS2/carbon (MoS2/C) nanocomposites. Potassium humate consists of a wide variety of oxygen-containing functional groups, which is considered as promising candidates for functionalization of graphene. Using potassium humate as carbon source, two-dimensional MoS2/C nanosheets with irregular shape were synthesized via a stabilized co-precipitation/calcination process. Electrochemical performance of the samples as an anode of lithium ion battery was measured, demonstrating that the MoS2/C nanocomposite calcinated at 700 °C (MoS2/C-700) electrode showed outstanding performance with a high discharge capacity of 554.9 mAh g- 1 at a current density of 100 mA g- 1 and the Coulomb efficiency of the sample maintained a high level of approximately 100% after the first 3 cycles. Simultaneously, the MoS2/C-700 electrode exhibited good cycling stability and rate performance. The success in synthesizing MoS2/C nanocomposites via co-precipitation/calcination route may pave a new way to realize promising anode materials for high-performance lithium ion batteries.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)₄Ti₃O₁₂ films as insulator, and HfO₂ films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO₂ defect control layer shows a low leakage current density of 3.1 × 10^-9 A/cm² at a gate voltage of - 3 V.

In Situ Repair of 2D Chalcogenides under Electron Beam Irradiation

Molybdenum disulfide (MoS₂ ) and bismuth telluride (Bi₂ Te₃ ) are the two most common types of structures adopted by 2D chalcogenides. In view of their unique physical properties and structure, 2D chalcogenides have potential applications in various fields. However, the excellent properties of these 2D crystals depend critically on their crystal structures, where defects, cracks, holes, or even greater damage can be inevitably introduced during the preparation and transferring processes. Such defects adversely impact the performance of devices made from 2D chalcogenides and, hence, it is important to develop ways to intuitively and precisely repair these 2D crystals on the atomic scale, so as to realize high-reliability devices from these structures. Here, an in situ study of the repair of the nanopores in MoS₂ and Bi₂ Te₃ is carried out under electron beam irradiation by transmission electron microscopy. The experimental conditions allow visualization of the structural dynamics of MoS₂ and Bi₂ Te₃ crystals with unprecedented resolution. Real-time observation of the healing of defects at atomic resolution can potentially help to reproducibly fabricate and simultaneously image single-crystalline free-standing 2D chalcogenides. Thus, these findings demonstrate the viability of using an electron beam as an effective tool to precisely engineer materials to suit desired applications in the future.

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

Two-dimensional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a nonzero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

We study electrical transport properties in exfoliated molybdenum disulfide (MoS₂) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10⁴ s, due to photo-charge trapping at the MoS₂/SiO₂ interface and in MoS₂ defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of [Formula: see text] ON current as high as [Formula: see text] 10⁵ ON-OFF ratio, mobility of ∼1 cm² V^-1 s^-1 and photoresponsivity [Formula: see text].

Influence of water vapor on the electronic property of MoS2 field effect transistors

The influence of water vapor on the electronic property of MoS₂ field effect transistors (FETs) is studied through controlled experiments. We fabricate supported and suspended FETs on the same piece of MoS₂ to figure out the role of SiO₂ substrate on the water sensing property of MoS₂. The two kinds of devices show similar response to water vapor and to different treatments, such as pumping in the vacuum, annealing at 500 K and current annealing, indicating the substrate does not play an important role in the MoS₂ water sensor. Water adsorption is found to decrease the carrier mobility probably through introducing a scattering center on the surface of MoS₂. The threshold voltage and subthreshold swing of the FETs do not change obviously after introducing water vapor, indicating there is no obvious doping and trap introducing effects. Long time pumping in a high vacuum and 500 K annealing show negligible effects on removing the water adsorption on the devices. Current annealing at high source-drain bias is found to be able to remove the water adsorption and set the FETs to their initial states. The mechanism is proposed to be through the hot carriers at high bias.

Recent progress in van der Waals heterojunctions

Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (T) noise measurements to understand the Coulomb scattering mechanism in the MoS₂ channel in the presence of h-BN buffer layer on the silicon dioxide (SiO₂) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (α_SC) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of h-BN on SiO₂ provides the suppression of α_SC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO₂ at T = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping-detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal-MoS₂ contact region.

MoS2-Based Nanocomposites for Electrochemical Energy Storage

Typical layered transition-metal chalcogenide materials, in particular layered molybdenum disulfide (MoS2) nanocomposites, have attracted increasing attention in recent years due to their excellent chemical and physical properties in various research fieldsHere, a general overview of synthetic MoS2 based nanocomposites via different preparation approaches and their applications in energy storage devices (Li-ion battery, Na-ion battery, and supercapacitor) is presented. The relationship between morphologies and the electrochemical performances of MoS2-based nanocomposites in the three typical and promising rechargeable systems is also discussed. Finally, perspectives on major challenges and opportunities faced by MoS2-based materials to address the practical problems of MoS2-based materials are presented.

Tailored performance of layered transition metal dichalcogenides via integration with low dimensional nanostructures

Transition metal dichalcogenides (TMDs) with a unique sandwich structure have attracted tremendous attention in recent years due to their distinctive electrical and optical properties.