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Tarekuzzaman M, Ishraq MH, Rahman MA, Irfan A, Rahman MZ, Akter MS, Abedin S, Rayhan MA, Rasheduzzaman M, Hossen MM, Hasan MZ. A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications. J Comput Chem 2024; 45:2476-2500. [PMID: 38970309 DOI: 10.1002/jcc.27455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2024] [Revised: 06/05/2024] [Accepted: 06/12/2024] [Indexed: 07/08/2024]
Abstract
This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.
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Affiliation(s)
- Md Tarekuzzaman
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - Mohammad Hasin Ishraq
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - Md Atikur Rahman
- Department of Physics, Pabna University of Science and Technology, Pabna, Bangladesh
| | - Ahmad Irfan
- Department of Chemistry, College of Science, King Khalid University, Abha, Saudi Arabia
| | - Md Zillur Rahman
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - Mist Shamima Akter
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - Sumaya Abedin
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - M A Rayhan
- Department of Arts and Sciences, Bangladesh Army University of Science and Technology, Nilphamari, Bangladesh
| | - Md Rasheduzzaman
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - M Moazzam Hossen
- Department of Computer Science and Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
| | - Md Zahid Hasan
- Materials Research and Simulation Lab, Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
- Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Chittagong, Bangladesh
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2
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Yao Z, Qiu W, Chen C, Bao X, Luo K, Deng Y, Xue W, Li X, Hu Q, Guo J, Yang L, Hu W, Wang X, Liu X, Zhang Q, Tanigaki K, Tang J. Making High Thermoelectric and Superior Mechanical Performance Nb 0.88Hf 0.12FeSb Half-Heusler via Additive Manufacturing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403705. [PMID: 39250330 DOI: 10.1002/advs.202403705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2024] [Revised: 06/15/2024] [Indexed: 09/11/2024]
Abstract
Thermoelectric generators held great promise through energy harvesting from waste heat. Their practical application, however, is greatly constrained by poor raw material utilization and tedious processing in fabricating desired shapes. Herein, a state-of-the-art process is reported for 3D printing the half-Heusler (Nb0.88Hf0.12FeSb) thermoelectric material using laser powder bed fusion (LPBF). The multi-dimensional intra- and inter-granular defects created by this process greatly suppress thermal conductivity by providing numerous phonon scattering centers. The resulting LPBF-fabricated half-Heusler exhibits a high figure of merit ≈1.2 at 923 K and a single-leg maximum efficiency of ≈3.3% at a temperature difference (ΔT) of 371 K. Hafnium oxide nanoparticles generated during LPBF effectively prevent crack propagation, ensuring competent mechanical performance and reliable thermoelectric output. The findings highlight the significant potential of LPBF in driving the next industrial revolution of highly efficient and customizable thermoelectric materials.
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Affiliation(s)
- Zhifu Yao
- Department of Fundamental Courses, Wuxi Institute of Technology, WuXi, 214121, China
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Wenbin Qiu
- Department of Fundamental Courses, Wuxi Institute of Technology, WuXi, 214121, China
| | - Chen Chen
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xin Bao
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kaiyi Luo
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
| | - Yong Deng
- State Ethnic Affairs Commission, Southwest Minzu University, Chengdu, 610041, China
| | - Wenhua Xue
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xiaofang Li
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Qiujun Hu
- College of Physics, Sichuan University, Chengdu, 610064, China
| | - Junbiao Guo
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
| | - Lei Yang
- School of Materials Science & Engineering, Sichuan University, Chengdu, 610064, China
| | - Wenyu Hu
- Materials Characterization and Preparation Center and Department of Physics, Southern University of Science and Technology, Shenzhen, 518056, China
| | - Xiaoyi Wang
- State Ethnic Affairs Commission, Southwest Minzu University, Chengdu, 610041, China
| | - Xingjun Liu
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Qian Zhang
- School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Katsumi Tanigaki
- Division of Quantum State of Matter, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Jun Tang
- Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064, China
- College of Physics, Sichuan University, Chengdu, 610064, China
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3
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Popa F, Marinca TF, Sechel NA, Frunză DI, Chicinaș I. High Milling Time Influence on the Phase Stability and Electrical Properties of Fe 50Mn 35Sn 15 Heusler Alloy Obtained by Mechanical Alloying. MATERIALS (BASEL, SWITZERLAND) 2024; 17:4355. [PMID: 39274745 PMCID: PMC11396000 DOI: 10.3390/ma17174355] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2024] [Revised: 08/28/2024] [Accepted: 08/29/2024] [Indexed: 09/16/2024]
Abstract
Fe50Mn35Sn15 Heusler alloy, obtained by mechanical alloying, was subjected to larger milling times in the range of 30-50 h to study the phase stability and morphology. X-ray diffraction studies have shown that the milled samples crystallise in a disordered A2 structure. The A2 structure was found to be stable in the milling range studied, contrary to the computation studies performed on this composition. Using Rietveld refinements, the lattice parameter, mean crystallite size, and lattice strain were computed. The nature of the obtained phases by milling was found to be nanocrystalline with values below 50 nm. A linear increase rate of 0.00713 (h-1) was computed for lattice strain as the milling time increased. As the milling time increases, the lattice parameter of the cubic Heusler was found to have a decreasing behaviour, reaching 2.9517 Å at 50 h of milling. The morphological and elemental distribution-characterised by scanning electron microscopy and energy-dispersive X-ray spectroscopy-evidenced Mn and Sn phase clustering. As the milling time increased, the morphology of the sample was found to change. The Mn and Sn cluster size was quantified by elemental line profile. Electrical resistivity evolution with milling time was analysed, showing a peak for 40 h of milling time.
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Affiliation(s)
- Florin Popa
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Traian Florin Marinca
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Niculina Argentina Sechel
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Dan Ioan Frunză
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Ionel Chicinaș
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
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4
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Hu W, Ye S, Li Q, Zhao B, Hagihala M, Dong Z, Zhang Y, Zhang J, Torri S, Ma J, Ge B, Luo J. Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2407578. [PMID: 39225331 DOI: 10.1002/advs.202407578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2024] [Revised: 08/10/2024] [Indexed: 09/04/2024]
Abstract
Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.
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Affiliation(s)
- Weimin Hu
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Song Ye
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Qizhu Li
- Institutes of Physical Science and Information Technology, Anhui University, 111 Jiulong Road, Hefei, 230601, China
| | - Binru Zhao
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Masato Hagihala
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 3191106, Japan
| | - Zirui Dong
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Yubo Zhang
- Minjiang Collaborative Center for Theoretical Physics, College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou, 350108, China
| | - Jiye Zhang
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Shuki Torri
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 3191106, Japan
| | - Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Binghui Ge
- Institutes of Physical Science and Information Technology, Anhui University, 111 Jiulong Road, Hefei, 230601, China
| | - Jun Luo
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
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5
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Fortunato NM, Li X, Schönecker S, Xie R, Taubel A, Scheibel F, Opahle I, Gutfleisch O, Zhang H. High-Throughput Screening of All- d-Metal Heusler Alloys for Magnetocaloric Applications. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:6765-6776. [PMID: 39070670 PMCID: PMC11270743 DOI: 10.1021/acs.chemmater.4c00345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/18/2024] [Accepted: 04/19/2024] [Indexed: 07/30/2024]
Abstract
Due to their versatile composition and customizable properties, A2BC Heusler alloys have found applications in magnetic refrigeration, magnetic shape memory effects, permanent magnets, and spintronic devices. The discovery of all-d-metal Heusler alloys with improved mechanical properties compared to those containing main group elements presents an opportunity to engineer Heusler alloys for energy-related applications. Using high-throughput density-functional theory calculations, we screened magnetic all-d-metal Heusler compounds and identified 686 (meta)stable compounds. Our detailed analysis revealed that the inverse Heusler structure is preferred when the electronegativity difference between the A and B/C atoms is small, contrary to conventional Heusler alloys. Additionally, our calculations of Pugh ratios and Cauchy pressures demonstrated that ductile and metallic bonding are widespread in all-d-metal Heuslers, supporting their enhanced mechanical behavior. We identified 49 compounds with a double-well energy surface based on Bain path calculations and magnetic ground states, indicating their potential as candidates for magnetocaloric and shape memory applications. Furthermore, by calculating the free energies, we propose that 11 compounds exhibit structural phase transitions and suggest isostructural substitutions to enhance the magnetocaloric effect.
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Affiliation(s)
- Nuno M. Fortunato
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
- CICECO-Aveiro
Institute of Materials, Department of Chemistry, University of Aveiro, 3810-193 Aveiro, Portugal
| | - Xiaoqing Li
- Department
of Materials Science and Engineering, KTH
- Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Stephan Schönecker
- Department
of Materials Science and Engineering, KTH
- Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Ruiwen Xie
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | - Andreas Taubel
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | | | - Ingo Opahle
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | - Oliver Gutfleisch
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
| | - Hongbin Zhang
- Institute
of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany
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6
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He J, Huang H, Wu B, Shen G, Zhou T, Gu Y, Wen L, Zhang Q. First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co 2MnGe/CoTiMnGe(100) heterojunction. Front Chem 2024; 12:1434607. [PMID: 39045332 PMCID: PMC11263165 DOI: 10.3389/fchem.2024.1434607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2024] [Accepted: 06/17/2024] [Indexed: 07/25/2024] Open
Abstract
Based on first-principles calculations in the density functional theory, we systematically investigated the possible interface structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction. The calculation indicated that the Co2MnGe Heusler alloy is a half-metal with a magnetic moment of 4.97 μB. CoTiMnGe is a narrow-band gap semiconductor and may act as an ultra-sensitive photocatalyst. We cannot find an "ideal" spin-polarization of 100% in CoCo termination and MnGe termination. Due to the interface interaction, the direct magnetic hybridization or indirect RKKY exchange will be weakened, leading to an increase in the atomic magnetic moment of the interfacial layer. For eight possible heterojunction structures, the half-metallic gaps in the Co2MnGe bulk have been destroyed by the inevitable interface states. The spin-polarization value of 94.31% in the CoCo-TiGe-B heterojunction revealed that it is the most stable structure. It is feasible to search for high-performance magnetic tunnel junction by artificially constructing suitable all-Heusler alloy heterojunctions.
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Affiliation(s)
- Jianqiao He
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
| | - Haishen Huang
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi, China
| | - Bo Wu
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi, China
| | - Guangxian Shen
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
| | - Tingyan Zhou
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi, China
| | - Yuxin Gu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
| | - Lin Wen
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang, China
| | - Qingqing Zhang
- School of Physics and Electronic Science, Zunyi Normal University, Zunyi, China
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7
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Popa F, Marinca TF, Sechel NA, Frunzӑ DI, Chicinaș I. Influence of Long Milling Time on the Electrical Resistivity of Nanocrystalline Ni 2MnSn Heusler Alloy Obtained by Mechanosynthesis. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1156. [PMID: 38998760 PMCID: PMC11243587 DOI: 10.3390/nano14131156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 07/02/2024] [Accepted: 07/03/2024] [Indexed: 07/14/2024]
Abstract
A Ni2MnSn Heusler alloy was obtained as a single B2 phase after 12 h of mechanical milling. The influence of prolonged milling on the phase stability was analysed for milling times up to 50 h, related to mean crystallite size, lattice strain, and electrical resistivity. The nature of the powders in the milled range was found to be nanocrystalline, with a mean crystallite size of about 33 ± 2 nm. An evaluation of the internal stresses induced by milling was performed, a linear behaviour was found, and a coefficient of the internal stress increase with milling time was proposed. Particle size distributions of milled samples were analysed, and the morphology of the powders was visualised by scanning electron microscopy. The elemental distribution of milled samples was quantified by energy-dispersive X-ray spectroscopy. Electrical resistivity measurements were performed on compacted samples, and their behaviour with milling time was analysed.
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Affiliation(s)
- Florin Popa
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Traian Florin Marinca
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Niculina Argentina Sechel
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Dan Ioan Frunzӑ
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
| | - Ionel Chicinaș
- Department of Materials Science and Engineering, Technical University of Cluj-Napoca, 103-105 Muncii Avenue, 400641 Cluj-Napoca, Romania
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8
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Lang R, Chen H, Zhang J, Li H, Guo D, Kou J, Zhao L, Fang Y, Wang X, Qi X, Wang Y, Ren Y, Wang H. Turning Ultra-Low Coercivity and Ultra-High Temperature Stability Within 897 K via Continuous Crystal Ordering Fluctuations. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402162. [PMID: 38708715 PMCID: PMC11267332 DOI: 10.1002/advs.202402162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 04/09/2024] [Indexed: 05/07/2024]
Abstract
High-performance soft magnetic materials are important for energy conservation and emission reduction. One challenge is achieving a combination of reliable temperature stability, high resistivity, high Curie temperature, and high saturation magnetization in a single material, which often comes at the expense of intrinsic coercivity-a typical trade-off in the family of soft magnetic materials with homogeneous microstructures. Herein, a nanostructured FeCoNiSiAl complex concentrated alloy is developed through a hierarchical structure strategy. This alloy exhibits superior soft magnetic properties up to 897 K, maintaining an ultra-low intrinsic coercivity (13.6 A m-1 at 297 K) over a wide temperature range, a high resistivity (138.08 µΩ cm-1 at 297 K) and the saturation magnetization with only a 16.7% attenuation at 897 K. These unusual property combinations are attributed to the dual-magnetic-state nature with exchange softening due to continuous crystal ordering fluctuations at the atomic scale. By deliberately controlling the microstructure, the comprehensive performance of the alloy can be tuned and controlled. The research provides valuable guidance for the development of soft magnetic materials for high-temperature applications and expands the potential applications of related functional materials in the field of sustainable energy.
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Affiliation(s)
- Runqiu Lang
- National Center for Materials Service SafetyUniversity of Science and Technology BeijingBeijing100083China
- Beijing Advanced Innovation Center for Materials Genome EngineeringState Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijing100083China
| | - Haiyang Chen
- Beijing Advanced Innovation Center for Materials Genome EngineeringState Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijing100083China
- Institute for Materials Intelligent TechnologyLiaoning Academy of MaterialsShenyang110004China
| | - Jinrong Zhang
- School of Materials Science and EngineeringNortheastern UniversityShenyang110819China
| | - Haipeng Li
- Functional Materials Research InstituteCentral Iron and Steel Research InstituteBeijing100081China
| | - Defeng Guo
- State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066004China
- College of ScienceYanshan UniversityQinhuangdao066004China
| | - Jianyuan Kou
- State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao066004China
| | - Lei Zhao
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory of Metal Materials CharacterizationCentral Iron and Steel Research InstituteBeijing100081China
| | - Yikun Fang
- Functional Materials Research InstituteCentral Iron and Steel Research InstituteBeijing100081China
| | - Xiaoqiang Wang
- School of Resources and MaterialsNortheastern University at QinhuangdaoQinhuangdao066004China
| | - Xiwei Qi
- School of Resources and MaterialsNortheastern University at QinhuangdaoQinhuangdao066004China
| | - Yan‐dong Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringState Key Laboratory for Advanced Metals and MaterialsUniversity of Science and Technology BeijingBeijing100083China
- Institute for Materials Intelligent TechnologyLiaoning Academy of MaterialsShenyang110004China
| | - Yang Ren
- Department of PhysicsCity University of Hong KongHong Kong SAR999077China
| | - Haizhou Wang
- National Center for Materials Service SafetyUniversity of Science and Technology BeijingBeijing100083China
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory of Metal Materials CharacterizationCentral Iron and Steel Research InstituteBeijing100081China
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9
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Ullah H, Yasin S, Safeen K, Younus A, El-Bahy ZM, Safeen A, Abdou SN, Ibrahim MM. First principle study of scandium-based novel ternary half Heusler ScXGe (X = Mn and Fe) alloys: insight into the spin-polarized structural, electronic, and magnetic properties. RSC Adv 2024; 14:13605-13617. [PMID: 38665498 PMCID: PMC11043918 DOI: 10.1039/d4ra00811a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 04/09/2024] [Indexed: 04/28/2024] Open
Abstract
The structural, electronic, and magnetic properties of novel half-Heusler alloys ScXGe (X = Mn, Fe) are investigated using the first principle full potential linearized augmented plane wave approach based on density functional theory (DFT). To attain the desired outcomes, we employed the exchange-correlation frameworks, specifically the local density approximation in combination with Perdew, Burke, and Ernzerhof's generalized gradient approximation plus the Hubbard U parameter method (GGA + U) to highlight the strong exchange-correlation interaction in these alloys. The structural parameter optimizations, whether ferromagnetic (FM) or nonmagnetic (NM), reveal that all ScXGe (where X = Mn, Fe) Heusler alloys attain their lowest ground state energy during FM optimization. The examination of the electronic properties of these alloys reveals their metallic character in both the spin-up and spin-down channels. The projected densities of states indicate that bonding is achieved through the hybridization of p-d and d-d states in all of the compounds. The investigation of the magnetic properties in ScXGe (where X = Mn, Fe) compounds indicates pronounced stability in their ferromagnetic state. Notably, the Curie temperatures for ScXGe (X = Mn, Fe) are determined to be 2177.02 K and 1656.09 K, respectively. The observation of metallic behavior and the strong ferromagnetic characteristics in ScXGe (X = Mn, Fe) half-Heusler alloys underscores their potential significance in the realm of spintronic devices. Consequently, our study serves as a robust foundation for subsequent experimental validation.
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Affiliation(s)
- Hayat Ullah
- Material Modeling and Simulation Lab, Department of Physics, Women University of Azad Jammu & Kashmir Bagh Pakistan
| | - Sadia Yasin
- Material Modeling and Simulation Lab, Department of Physics, Women University of Azad Jammu & Kashmir Bagh Pakistan
| | - Kashif Safeen
- Department of Physics, Abdul Wali Khan University Mardan 23200 Pakistan
| | - Adeel Younus
- Material Modeling and Simulation Lab, Department of Physics, Women University of Azad Jammu & Kashmir Bagh Pakistan
| | - Zeinhom M El-Bahy
- Department of Chemistry, Faculty of Science, Al-Azhar University Nasr City 11884 Cairo Egypt
| | - Akif Safeen
- Department of Physics, University of Poonch Rawalakot, AJK 12350 Pakistan
| | - Safaa N Abdou
- Department of Chemistry, Khurmah University College, Taif University Taif Saudi Arabia
| | - Mohamed M Ibrahim
- Department of Chemistry, College of Science, Taif University P. O. Box 11099 Taif 21944 Saudi Arabia
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10
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Kong C, Song L, Zhao X, Wang H, Zhao J, Yuan G, Zhang X. Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co 2FeAl/ n-GaAs Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17041-17050. [PMID: 38517684 DOI: 10.1021/acsami.4c01858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/24/2024]
Abstract
The ultrafast manipulation of spin in ferromagnet-semiconductor (FM/SC) heterojunctions is a key issue for advancing spintronics, where magnetic damping and interfacial spin transport often define device efficiency. Leveraging selective optical excitation in semiconductors offers a unique approach to spin manipulation in FM/SC heterojunctions. Herein, we investigated the magnetic dynamics of a Co2FeAl/n-GaAs heterojunction using the time-resolved magneto-optical Kerr technique and observed the considerably enhanced magnetic damping of Co2FeAl when GaAs is photoexcited near its band edge. This enhancement is attributed to an enhanced spin-pumping effect facilitated by spin-dependent carrier tunneling and capture within the Co2FeAl layer. Moreover, circularly polarized light excites spin-polarized band-edge photocarriers, further impacting the magnetic damping of Co2FeAl through an additional optical spin-transfer torque on the magnetic moment of Co2FeAl. Our results provide a valuable reference for manipulating spin-pumping and interfacial spin transport in FM/SC heterojunctions, showcasing the advantage of optical control of semiconductor photocarriers for the ultrafast manipulation of magnetic dynamics and interfacial spin transfer.
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Affiliation(s)
- Chongtao Kong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Lin Song
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xupeng Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hailong Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guodong Yuan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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11
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Khorwal AK, Saha S, Lukoyanov AV, Patra AK. Signatures of nearly compensated magnetism and spin glass behavior in highly frustrated β-Mn-type Mn50Fe25+xAl25-x Heusler alloys. J Chem Phys 2024; 160:114705. [PMID: 38506295 DOI: 10.1063/5.0202812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Accepted: 03/05/2024] [Indexed: 03/21/2024] Open
Abstract
The present study examines the effect of Fe/Al concentration on the structural and magnetic properties of Mn-rich Mn50Fe25+xAl25-x (x = 5, 10, 15) Heusler alloys through x-ray diffraction, temperature- and field-dependent DC magnetization, thermoremanent magnetization, magnetic memory effect, AC susceptibility measurements, and DFT calculations. The samples crystallize in a cubic β-Mn structure. The trend shows a reduction in lattice parameters (unit cell volume) with the increasing Fe proportion. These alloys exhibit strong antiferromagnetic interactions with large frustration parameters, indicating the presence of competing magnetic interactions. The DC magnetization data reveal spin glass-like features with a peak at spin glass freezing temperature (Tf). The observation of bifurcation in temperature-dependent zero-field-cooled and field-cooled magnetization curves, exponential dependence of the temperature variation of remanence and coercivity, magnetic relaxation, and magnetic memory effect below Tf support the spin-glass character of these alloys. The frequency dependence of Tf is also examined in the context of dynamic scaling laws, such as the Vogel-Fulcher law and critical slowing down model, which further supports the presence of spin glass behavior. In the theoretical DFT calculations, the electronic structure is found to be metallic and similar for both spin projections. Moreover, the antiferromagnetic arrangement of the magnetic moments, in line with the experimental observations, is stabilized by exchange interactions, resulting in an almost compensated total magnetic moment of 0.02-0.38 µB/f.u. This is probably caused by the frustrated structure and non-stoichiometric compositions of Mn50Fe25+xAl25-x.
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Affiliation(s)
- Abhinav Kumar Khorwal
- Department of Physics, Central University of Rajasthan, NH-8, Bandarsindri 305817, Rajasthan, India
| | - Sujoy Saha
- Department of Physics, Central University of Rajasthan, NH-8, Bandarsindri 305817, Rajasthan, India
| | - Alexey V Lukoyanov
- M.N. Mikheev Institute of Metal Physics UrB RAS, 620108 Ekaterinburg, Russia
- Institute of Physics and Technology, Ural Federal University, 620002 Ekaterinburg, Russia
| | - Ajit K Patra
- Department of Physics, Central University of Rajasthan, NH-8, Bandarsindri 305817, Rajasthan, India
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12
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Wang R, Cai J, Zhang Q, Tan X, Wu J, Liu G, Jiang J. Strong electron-phonon coupling and high lattice thermal conductivity in half-Heusler thermoelectric materials. Phys Chem Chem Phys 2024; 26:8932-8937. [PMID: 38433622 DOI: 10.1039/d3cp06160d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2024]
Abstract
Traditional half-Heusler thermoelectric materials, identified as 18-electron compounds, are characterized by the high power factor and the high lattice thermal conductivity. Interestingly, the emerging 19-electron half-Heusler compounds were also found to be promising thermoelectric materials, but with a 5-10 times lower lattice thermal conductivity. Since the two kinds of compounds have similar chemical and physical structures, such as TiCoSb and VCoSb, the large difference in lattice thermal conductivity is a puzzling question. Here, we present a theoretical study to clarify the lattice thermal transport in half-Heusler thermoelectric materials. Based on electronic band structure analysis, we show that the two transition-metal elements in half-Heusler compounds form the strong and direct d-d interaction that is responsible for the high lattice thermal conductivity of 18-electron compounds. In 19-electron half-Heusler compounds, however, the extra valence electron enters the d-d antibonding states, which significantly weakens the atomic bond strength, leading to a large decrease in the cohesive energy. The resulting softened acoustic phonons enhance the phonon-phonon scattering, and thus reduce the lattice thermal conductivity significantly. By constructing an artificial 18-e compound V0.5Sc0.5CoSb, it is proved that the one less electron relative to VCoSb increases the lattice thermal conductivity significantly.
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Affiliation(s)
- Ruoyu Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianfeng Cai
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaojian Tan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiehua Wu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Guoqiang Liu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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13
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Imasato K, Miyazaki H, Sauerschnig P, Johari KK, Ishida T, Yamamoto A, Ohta M. Achieving Compatible p/n-Type Half-Heusler Compositions in Valence Balanced/Unbalanced Mg 1-xV xNiSb. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11637-11645. [PMID: 38408287 DOI: 10.1021/acsami.3c16324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
In thermoelectric and other inorganic materials research, the significance of half-Heusler (HH) compositions following the 18-electron rule has drawn interest in developing and exploiting the potential of intermetallic compounds. For the fabrication of thermoelectric modules, in addition to high-performance materials, having both p- and n-type materials with compatible thermal expansion coefficients is a prerequisite for module development. In this work, the p-type to n-type transition of valence balanced/unbalanced HH composition of Mg1-xVxNiSb was demonstrated by changing the Mg:V chemical ratio. The Seebeck coefficient and power factor of Ti-doped Mg0.57V0.33Ti0.1NiSb are -130 μV K-1 and 0.4 mW m-1 K-2 at 400 K, respectively. In addition, the reduced lattice thermal conductivity (κL < 2.5 W m-1 K-1 at 300 K) of n-type compositions was reported to be much smaller than κL of conventional HH materials. As high thermal conductivity has long been an issue for HH materials, the synthesis of p- and n-type Mg1-xVxNiSb compositions with low lattice thermal conductivity is a promising strategy for producing high-performance HH compounds. Achieving both p- and n-type materials from similar parent composition enabled us to fabricate a thermoelectric module with maximum output power Pmax ∼ 63 mW with a temperature difference of 390 K. This finding supports the benefit of exploring the huge compositional space of valence balanced/unbalanced quaternary HH compositions for further development of thermoelectric devices.
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Affiliation(s)
- Kazuki Imasato
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
- Max Planck Institute for Chemical Physics of Solids, Dresden 01187, Germany
| | - Hidetoshi Miyazaki
- Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
| | - Philipp Sauerschnig
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
| | - Kishor Kumar Johari
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
| | - Takao Ishida
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
| | - Atsushi Yamamoto
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
| | - Michihiro Ohta
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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14
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Shawon AKA, Guetari W, Ciesielski K, Orenstein R, Qu J, Chanakian S, Rahman MT, Ertekin E, Toberer E, Zevalkink A. Alloying-Induced Structural Transition in the Promising Thermoelectric Compound CaAgSb. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:1908-1918. [PMID: 38533450 PMCID: PMC10961731 DOI: 10.1021/acs.chemmater.3c02621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 01/25/2024] [Accepted: 01/26/2024] [Indexed: 03/28/2024]
Abstract
AMX Zintl compounds, crystallizing in several closely related layered structures, have recently garnered attention due to their exciting thermoelectric properties. In this study, we show that orthorhombic CaAgSb can be alloyed with hexagonal CaAgBi to achieve a solid solution with a structural transformation at x ∼ 0.8. This transition can be seen as a switch from three-dimensional (3D) to two-dimensional (2D) covalent bonding in which the interlayer M-X bond distances expand while the in-plane M-X distances contract. Measurements of the elastic moduli reveal that CaAgSb1-xBix becomes softer with increasing Bi content, with the exception of a steplike 10% stiffening observed at the 3D-to-2D phase transition. Thermoelectric transport measurements reveal promising Hall mobility and a peak zT of 0.47 at 620 K for intrinsic CaAgSb, which is higher than those in previous reports for unmodified CaAgSb. However, alloying with Bi was found to increase the hole concentration beyond the optimal value, effectively lowering the zT. Interestingly, analysis of the thermal conductivity and electrical conductivity suggests that the Bi-rich alloys are low Lorenz-number (L) materials, with estimated values of L well below the nondegenerate limit of L = 1.5 × 10-8 W Ω K-2, in spite of the metallic-like transport properties. A low Lorenz number decouples lattice and electronic thermal conductivities, providing greater flexibility for enhancing thermoelectric properties.
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Affiliation(s)
- A. K.
M. Ashiquzzaman Shawon
- Department
of Chemical Engineering and Material Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Weeam Guetari
- Department
of Chemical Engineering and Material Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Kamil Ciesielski
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Rachel Orenstein
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Jiaxing Qu
- Department
of Mechanical Science and Engineering, University
of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
| | - Sevan Chanakian
- Department
of Chemical Engineering and Material Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Md. Towhidur Rahman
- Department
of Mechanical Engineering, Michigan State
University, East Lansing, Michigan 48824, United States
| | - Elif Ertekin
- Department
of Mechanical Science and Engineering, University
of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
| | - Eric Toberer
- Department
of Physics, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Alexandra Zevalkink
- Department
of Chemical Engineering and Material Science, Michigan State University, East Lansing, Michigan 48824, United States
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15
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Górnicka K, Gui X, Chamorro JR, McQueen TM, Cava RJ, Klimczuk T, Winiarski MJ. Superconductivity-Electron Count Relationship in Heusler Phases-the Case of LiPd 2Si. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:1870-1879. [PMID: 38435048 PMCID: PMC10902818 DOI: 10.1021/acs.chemmater.3c02398] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Revised: 01/30/2024] [Accepted: 01/31/2024] [Indexed: 03/05/2024]
Abstract
We report superconductivity in the full Heusler compound LiPd2Si (space group Fm3̅m, No. 225) at a critical temperature of Tc = 1.3 K and a normalized heat capacity jump at Tc, ΔC/γTc = 1.1. The low-temperature isothermal magnetization curves imply type-I superconductivity, as previously observed in LiPd2Ge. We show, based on density functional theory calculations and using the molecular orbital theory approach, that while LiPd2Si and LiPd2Ge share the Pd cubic cage motif that is found in most of the reported Heusler superconductors, they show distinctive features in the electronic structure. This is due to the fact that Li occupies the site which, in other compounds, is filled with an early transition metal or a rare-earth metal. Thus, while a simple valence electron count-property relationship is useful in predicting and tuning Heusler materials, inclusion of the symmetry of interacting frontier orbitals is also necessary for the best understanding.
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Affiliation(s)
- Karolina Górnicka
- Faculty
of Applied Physics and Mathematics and Advanced Materials Centre, Gdansk University of Technology, ul. Narutowicza 11/12, 80-233 Gdańsk, Poland
| | - Xin Gui
- Department
of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Juan R. Chamorro
- Materials
Department and Materials Research Laboratory, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Tyrel M. McQueen
- Department
of Chemistry, William H. Miller III Department of Physics and Astronomy,
Department of Materials Science and Engineering, and Institute for
Quantum Matter, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Robert J. Cava
- Department
of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Tomasz Klimczuk
- Faculty
of Applied Physics and Mathematics and Advanced Materials Centre, Gdansk University of Technology, ul. Narutowicza 11/12, 80-233 Gdańsk, Poland
| | - Michał J. Winiarski
- Faculty
of Applied Physics and Mathematics and Advanced Materials Centre, Gdansk University of Technology, ul. Narutowicza 11/12, 80-233 Gdańsk, Poland
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16
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Varga M, Galdun L, Vronka M, Diko P, Heczko O, Varga R. Electrodeposited Heusler Alloys-Based Nanowires for Shape Memory and Magnetocaloric Applications. MATERIALS (BASEL, SWITZERLAND) 2024; 17:407. [PMID: 38255575 PMCID: PMC10817646 DOI: 10.3390/ma17020407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/08/2024] [Accepted: 01/09/2024] [Indexed: 01/24/2024]
Abstract
In this article, the downsizing of functional Heusler alloys is discussed, focusing on the published results dealing with Heusler alloy nanowires. The theoretical information inspired the fabrication of novel nanowires that are presented in the results section of the article. Three novel nanowires were fabricated with the compositions of Ni66Fe21Ga13, Ni58Fe28In14, and Ni50Fe31Sn19. The Ni66Fe21Ga13 nanowires were fabricated, aiming to improve the stoichiometry of previous functional Ni-Fe-Ga Heusler nanomaterials with a functional behavior above room temperature. They exhibit a phase transition at the temperature of ≈375 K, which results in a magnetocaloric response of |ΔSM| ≈ 0.12 J·kg-1·K-1 at the magnetic field change of only μ0ΔH = 1 T. Novel Heusler alloy Ni58Fe28In14 nanowires, as well as Ni50Fe31Sn19 nanowires, are analyzed for the first time, and their magnetic properties are discussed, introducing a simple electrochemical approach for the fabrication of nanodimensional alloys from mutually immiscible metals.
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Affiliation(s)
- Michal Varga
- Faculty of Materials, Metallurgy and Recycling, Technical University of Kosice, Letna 9, 040 01 Kosice, Slovakia;
| | - Ladislav Galdun
- Centre for Progressive Materials, Technology, and Innovation Park, Pavol Jozef Safarik University in Kosice, Tr. SNP 1, 040 11 Kosice, Slovakia;
| | - Marek Vronka
- FZU—Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 00 Prague, Czech Republic; (M.V.)
| | - Pavel Diko
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Kosice, Slovakia;
| | - Oleg Heczko
- FZU—Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 00 Prague, Czech Republic; (M.V.)
| | - Rastislav Varga
- Centre for Progressive Materials, Technology, and Innovation Park, Pavol Jozef Safarik University in Kosice, Tr. SNP 1, 040 11 Kosice, Slovakia;
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17
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Liu Z, Zhou B, Wang X, Mi W. Band inversion and switchable magnetic properties of two-dimensional RuClF/WSe 2 van der Waals heterostructures. Phys Chem Chem Phys 2024; 26:1135-1147. [PMID: 38099407 DOI: 10.1039/d3cp05545k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have potential applications in new low-dimensional spintronic devices owing to their unique electronic properties and magnetic anisotropy energies (MAEs). The electronic structures and magnetic properties of RuClF/WSe2 heterostructure are calculated using first-principles calculations. The most stable RuClF/WSe2 heterostructure is selected for property analysis. RuClF/WSe2 heterostructure has half-metallicity. Considering spin-orbit coupling (SOC), band inversion is present in the RuClF/WSe2 heterostructure, which is also demonstrated by the weight of the energy contributions. The local density of states (LDOS) of the edge states can provide strong evidence that the RuClF/WSe2 heterostructure has topological properties. The MAE of RuClF/WSe2 heterostructure is in-plane magnetic anisotropy (IMA), which mainly originates from the contribution of matrix element difference in Ru (dxy, dx2-y2) orbitals. The electronic properties and MAE of RuClF/WSe2 heterostructure can be regulated by biaxial strains and electric fields. The band inversion phenomenon is enhanced at electric fields in the opposite direction, which is also modified at different biaxial strains. However, the band inversion phenomenon disappears at the biaxial strains of 6% and an electric field of 0.5 V Å-1. The MAE of RuClF/WSe2 heterostructure is transformed from IMA into perpendicular magnetic anisotropy (PMA) at certain compressive strains and positively directed electric fields. The above results indicate that the RuClF/WSe2 heterostructure has potential applications in spintronic devices.
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Affiliation(s)
- Ziyu Liu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Wenbo Mi
- Department of Applied Physics, School of Science, Tianjin University, Tianjin 300354, China.
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18
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Wei J, Guo Y, Wang G. Effects of isotropic strain on the structure and transport properties of half-Heusler alloy BiBaK: a first-principles investigation. RSC Adv 2024; 14:463-477. [PMID: 38173595 PMCID: PMC10759175 DOI: 10.1039/d3ra07345a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
In this study, using density functional and Boltzmann transport theories, we systematically investigated the effects of tensile and compressive strains on the elastic properties, phonon dispersion relation, electronic structure, and transport properties of the half-Heusler compound BiBaK. We calculated the elastic constants and phonon dispersion curves for BiBaK, which demonstrated its mechanical and thermodynamic stability, respectively, under different isotropic strains. Further, calculations showed that the electronic structure and energy bandgap of BiBaK changed with the application of isotropic strain. A high power factor and low thermal conductivity are key to improving the performance of thermoelectric materials. The figure of merit of BiBaK is 0.6 when it is unstrained and reaches a maximum value of 0.93 at -9% compressive strain and a temperature of 1200 K, indicating that under isotropic compressive strain, BiBaK compounds are efficient thermoelectric materials for high-temperature applications.
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Affiliation(s)
- Junhong Wei
- School of Science, Henan Institute of Technology Xinxiang 453003 China
| | - Yongliang Guo
- School of Science, Henan Institute of Technology Xinxiang 453003 China
| | - Guangtao Wang
- School of Physics, Henan Normal University Xinxiang 453007 China
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19
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Tas M, Özdoğan K, Şaşıoğlu E, Galanakis I. High Spin Magnetic Moments in All-3 d-Metallic Co-Based Full Heusler Compounds. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7543. [PMID: 38138686 PMCID: PMC10744821 DOI: 10.3390/ma16247543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 11/13/2023] [Accepted: 12/04/2023] [Indexed: 12/24/2023]
Abstract
We conduct ab-initio electronic structure calculations to explore a novel category of magnetic Heusler compounds, comprising solely 3d transition metal atoms and characterized by high spin magnetic moments. Specifically, we focus on Co2YZ Heusler compounds, where Y and Z represent transition metal atoms such that the order of the valence is Co > Y > Z. We show that these compounds exhibit a distinctive region of very low density of minority-spin states at the Fermi level when crystallizing in the L21 lattice structure. The existence of this pseudogap leads most of the studied compounds to a Slater-Pauling-type behavior of their total spin magnetic moment. Co2FeMn is the compound that presents the largest total spin magnetic moment in the unit cell reaching a very large value of 9 μB. Our findings suggest that these compounds are exceptionally promising materials for applications in the realms of spintronics and magnetoelectronics.
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Affiliation(s)
- Murat Tas
- Department of Physics, Gebze Technical University, 41400 Kocaeli, Turkey;
| | - Kemal Özdoğan
- Department of Physics, Yildiz Technical University, 34210 İstanbul, Turkey;
| | - Ersoy Şaşıoğlu
- Institute of Physics, Martin Luther University Halle-Wittenberg, 06120 Halle (Saale), Germany;
| | - Iosif Galanakis
- Department of Materials Science, School of Natural Sciences, University of Patras, 26504 Patra, Greece
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20
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Ryan SA, Johnsen PC, Elhanoty MF, Grafov A, Li N, Delin A, Markou A, Lesne E, Felser C, Eriksson O, Kapteyn HC, Grånäs O, Murnane MM. Optically controlling the competition between spin flips and intersite spin transfer in a Heusler half-metal on sub-100-fs time scales. SCIENCE ADVANCES 2023; 9:eadi1428. [PMID: 37948525 PMCID: PMC10637748 DOI: 10.1126/sciadv.adi1428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 10/12/2023] [Indexed: 11/12/2023]
Abstract
The direct manipulation of spins via light may provide a path toward ultrafast energy-efficient devices. However, distinguishing the microscopic processes that can occur during ultrafast laser excitation in magnetic alloys is challenging. Here, we study the Heusler compound Co2MnGa, a material that exhibits very strong light-induced spin transfers across the entire M-edge. By combining the element specificity of extreme ultraviolet high-harmonic probes with time-dependent density functional theory, we disentangle the competition between three ultrafast light-induced processes that occur in Co2MnGa: same-site Co-Co spin transfer, intersite Co-Mn spin transfer, and ultrafast spin flips mediated by spin-orbit coupling. By measuring the dynamic magnetic asymmetry across the entire M-edges of the two magnetic sublattices involved, we uncover the relative dominance of these processes at different probe energy regions and times during the laser pulse. Our combined approach enables a comprehensive microscopic interpretation of laser-induced magnetization dynamics on time scales shorter than 100 femtoseconds.
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Affiliation(s)
- Sinéad A. Ryan
- JILA, University of Colorado Boulder, 440 UCB, Boulder, CO 80309, USA
| | - Peter C. Johnsen
- JILA, University of Colorado Boulder, 440 UCB, Boulder, CO 80309, USA
| | - Mohamed F. Elhanoty
- Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120, Sweden
| | - Anya Grafov
- JILA, University of Colorado Boulder, 440 UCB, Boulder, CO 80309, USA
| | - Na Li
- JILA, University of Colorado Boulder, 440 UCB, Boulder, CO 80309, USA
| | - Anna Delin
- Department of Applied Physics, School of Engineering Sciences, KTH Royal Institute of Technology, AlbaNova University Center, SE-10691 Stockholm, Sweden
- Swedish e-Science Research Center (SeRC), KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Uppsala University, 75121 Uppsala, Sweden
| | - Anastasios Markou
- Physics Department, University of Ioannina, 45110 Ioannina, Greece
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Edouard Lesne
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - Olle Eriksson
- Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Uppsala University, 75121 Uppsala, Sweden
| | - Henry C. Kapteyn
- JILA, University of Colorado Boulder, 440 UCB, Boulder, CO 80309, USA
- KMLabs Inc., Boulder, CO 80301, USA
| | - Oscar Grånäs
- Division of Materials Theory, Department of Physics and Astronomy, Uppsala University, Box-516, SE 75120, Sweden
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21
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Zosiamliana R, Kima L, Mawia Z, Zuala L, Abdurakhmanov G, Rai DP. First-principles investigation of the electronics, optical, mechanical, thermodynamics and thermoelectric properties of Na based Quaternary Heusler alloys (QHAs) NaHfXGe (X = Co, Rh, Ir). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:065501. [PMID: 37875142 DOI: 10.1088/1361-648x/ad0676] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 10/24/2023] [Indexed: 10/26/2023]
Abstract
In this study, we explored the electronic and thermoelectric (TE) properties of the Na-based Quaternary Heusler Alloys (QHAs) NaHfXGe (X = Co, Rh, Ir) using density functional theory (DFT). We performed the spin-polarized DFT calculations at the general gradient approximation (GGA) level and confirmed the ground state non-magnetic configuration of NaHfXGe. The mechanical and thermodynamical stabilities are analyzed and discussed to validate the stability by calculating the elastic constant and phonon dispersion curve. A thorough investigation on the electronic properties are carried out by performing the GGA, GGA+U, and GGA+SOC formalism where we report the semi-conducting characteristic of NaHfCoGe and NaHfRhGe QHAs. However, NaHfIrGe is predicted to be a non-magnetic metal. From the calculated optical properties we found that the most active optical absorption occurs within the vis-UV region withα>105 cm-1, therefore the studied QHAs are proposed to be a promising optoelectronic materials. The results of the thermodynamic properties have shown that NaHfXGe follows Debye's low-temperature specific heat law and the classical thermodynamics of the Dulong-Petit law at high temperatures. The calculated TE efficiency using GGA+SOC formalism atT= 1200 K are ZT∼1.22 and 0.57 for NaHfCoGe and NaHfRhGe, suggesting that these materials are potential TE materials to operate at high temperature.
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Affiliation(s)
- R Zosiamliana
- Department of Physics, Physical Sciences Research Center (PSRC), Pachhunga University College, Mizoram University, Aizawl 796001, India
- Department of Physics, Mizoram University, Aizawl 796009, India
| | - Lalrin Kima
- Department of Physics, Physical Sciences Research Center (PSRC), Pachhunga University College, Mizoram University, Aizawl 796001, India
| | - Zodin Mawia
- Department of Physics, Mizoram University, Aizawl 796009, India
| | - Lalhriat Zuala
- Department of Physics, Physical Sciences Research Center (PSRC), Pachhunga University College, Mizoram University, Aizawl 796001, India
| | - G Abdurakhmanov
- National University of Uzbekistan, 4 Universitet str, 100174 Tashkent, Uzbekistan
| | - D P Rai
- Department of Physics, Physical Sciences Research Center (PSRC), Pachhunga University College, Mizoram University, Aizawl 796001, India
- Researcher, Faculty of Chemical Engineering, New Uzbekistan University, Tashkent, Uzbekistan
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22
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Yadav E, Kumar S. Intrinsically dominated anomalous Hall effect in pulsed laser deposited epitaxial Co 2MnGe ferromagnetic full Heusler alloy thin films. RSC Adv 2023; 13:30101-30107. [PMID: 37842678 PMCID: PMC10572099 DOI: 10.1039/d3ra06132a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/10/2023] [Indexed: 10/17/2023] Open
Abstract
Large size epitaxial thin films of ferromagnetic Co2MnGe full Heusler alloy are grown over MgO(100) substrate by using pulsed laser deposition technique under optimized growth conditions. Metallic behavior is confirmed from the longitudinal resistivity-temperature data, while a minimum in the resistivity at ∼25 K is attributed to the disorder-induced weak localization effect. Importantly, a dominating intrinsic anomalous Hall conductivity value of ∼21 S cm-1 against an overall anomalous Hall conductivity value of ∼36 S cm-1 at the room temperature has been estimated for the epitaxial Co2MnGe film. The dominating intrinsic mechanism is also evident from the near temperature-independent behavior of the overall anomalous Hall conductivity.
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Affiliation(s)
- Ekta Yadav
- Department of Physics, Indian Institute of Technology Delhi New Delhi 110016 India
| | - Sunil Kumar
- Department of Physics, Indian Institute of Technology Delhi New Delhi 110016 India
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23
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Gurunani B, Gupta DC. Tailoring the intrinsic magneto-electronic, mechanical, thermo-physical and thermoelectric response of cobalt-based Heusler alloys: an ab initio insight. RSC Adv 2023; 13:29959-29974. [PMID: 37842682 PMCID: PMC10570773 DOI: 10.1039/d3ra03957a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Accepted: 10/02/2023] [Indexed: 10/17/2023] Open
Abstract
We conducted a comprehensive analysis of the fundamental properties of CoHfSi and CoHfGe half-Heusler alloys using density functional theory simulations implemented in Wien2k. To begin, structural optimization revealed that both alloys effectively adopt a cubic C1b structure, with Y1 as the dominant ferromagnetic phase. Electronic properties were computed using various approximation schemes, including the Generalized Gradient Approximation and the modified Becke-Johnson potential. The examination of electronic band structures and their accompanying density of states using the modified Becke-Johnson functional approach unveiled their half-metallic nature. In this context, the spin-up channel exhibited semiconductor behaviour, while the spin-down channel displayed metallic characteristics. Additionally, the spin-splitting observed in their resulting band structures contributed to a net magnetism within their lattice structure, making them promising candidates for spintronic applications. We also scrutinized Seebeck coefficients, electrical conductivity, thermal conductivity, and power factor to gain a better understanding of their thermoelectric properties.
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Affiliation(s)
- Bharti Gurunani
- Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University Gwalior 474011 India
| | - Dinesh C Gupta
- Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University Gwalior 474011 India
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24
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Marchenkov VV, Irkhin VY. Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn 2YAl and Mn 3Z ( Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt). MATERIALS (BASEL, SWITZERLAND) 2023; 16:6351. [PMID: 37834488 PMCID: PMC10573737 DOI: 10.3390/ma16196351] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/08/2023] [Accepted: 09/19/2023] [Indexed: 10/15/2023]
Abstract
We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.
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Affiliation(s)
- Vyacheslav V. Marchenkov
- Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia;
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25
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Ma S, Zhang X, Zheng G, Qian M, Geng L. Toughening of Ni-Mn-Based Polycrystalline Ferromagnetic Shape Memory Alloys. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5725. [PMID: 37630016 PMCID: PMC10456285 DOI: 10.3390/ma16165725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/15/2023] [Accepted: 08/16/2023] [Indexed: 08/27/2023]
Abstract
Solid-state refrigeration technology is expected to replace conventional gas compression refrigeration technology because it is environmentally friendly and highly efficient. Among various solid-state magnetocaloric materials, Ni-Mn-based ferromagnetic shape memory alloys (SMAs) have attracted widespread attention due to their multifunctional properties, such as their magnetocaloric effect, elastocaloric effect, barocaloric effect, magnetoresistance, magnetic field-induced strain, etc. Recently, a series of in-depth studies on the thermal effects of Ni-Mn-based magnetic SMAs have been carried out, and numerous research results have been obtained. It has been found that poor toughness and cyclic stability greatly limit the practical application of magnetic SMAs in solid-state refrigeration. In this review, the influences of element doping, microstructure design, and the size effect on the strength and toughness of Ni-Mn-based ferromagnetic SMAs and their underlying mechanisms are systematically summarized. The pros and cons of different methods in enhancing the toughness of Ni-Mn-based SMAs are compared, and the unresolved issues are analyzed. The main research directions of Ni-Mn-based ferromagnetic SMAs are proposed and discussed, which are of scientific and technological significance and could promote the application of Ni-Mn-based ferromagnetic SMAs in various fields.
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Affiliation(s)
- Siyao Ma
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Xuexi Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Guangping Zheng
- Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China
| | - Mingfang Qian
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Lin Geng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
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26
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Zhang R, Kong J, Hou Y, Zhao L, Zhu J, Li C, Zhao D. Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5528. [PMID: 37629820 PMCID: PMC10456587 DOI: 10.3390/ma16165528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/04/2023] [Accepted: 08/07/2023] [Indexed: 08/27/2023]
Abstract
Pseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal conductivity. High-purity and relatively dense Ti1-xNbx(FeCoNi)Sb (x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) alloys were prepared via microwave synthesis combined with rapid hot-pressing sintering, and their thermoelectric properties are investigated in this work. The Seebeck coefficient was markedly increased via Nb substitution at Ti sites, which resulted in the optimized power factor of 1.45 μWcm-1K-2 for n-type Ti0.93Nb0.07(FeCoNi)Sb at 750 K. In addition, the lattice thermal conductivity was largely decreased due to the increase in phonon scattering caused by point defects, mass fluctuation and strain fluctuation introduced by Nb-doping. At 750 K, the lattice thermal conductivity of Ti0.97Nb0.03(FeCoNi)Sb is 2.37 Wm-1K-1, which is 55% and 23% lower than that of TiCoSb and Ti(FeCoNi)Sb, respectively. Compared with TiCoSb, the ZT of the Ti1-xNbx(FeCoNi)Sb samples were significantly increased. The average ZT values of the Nb-doped pseudo-ternary half-Heusler samples were dozens of times that of the TiCoSb prepared using the same process.
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Affiliation(s)
- Ruipeng Zhang
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Jianbiao Kong
- Heze Institute of Product Inspection and Testing, Heze 274000, China
| | - Yangbo Hou
- Heze Institute of Product Inspection and Testing, Heze 274000, China
| | - Linghao Zhao
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Junliang Zhu
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Changcun Li
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Degang Zhao
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
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27
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Ren W, Xue W, Guo S, He R, Deng L, Song S, Sotnikov A, Nielsch K, van den Brink J, Gao G, Chen S, Han Y, Wu J, Chu CW, Wang Z, Wang Y, Ren Z. Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi. Nat Commun 2023; 14:4722. [PMID: 37543679 PMCID: PMC10404254 DOI: 10.1038/s41467-023-40492-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2023] [Accepted: 07/31/2023] [Indexed: 08/07/2023] Open
Abstract
Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors. Although phononic and electronic transport underpin the physical origin of thermoelectrics, vacancy has only played a stereotyped role as a scattering center. Here we reveal the multifunctionality of vacancy in tailoring the transport properties of an emerging thermoelectric material, defective n-type ZrNiBi. The phonon kinetic process is mediated in both propagating velocity and relaxation time: vacancy-induced local soft bonds lower the phonon velocity while acoustic-optical phonon coupling, anisotropic vibrations, and point-defect scattering induced by vacancy shorten the relaxation time. Consequently, defective ZrNiBi exhibits the lowest lattice thermal conductivity among the half-Heusler family. In addition, a vacancy-induced flat band features prominently in its electronic band structure, which is not only desirable for electron-sufficient thermoelectric materials but also interesting for driving other novel physical phenomena. Finally, better thermoelectric performance is established in a ZrNiBi-based compound. Our findings not only demonstrate a promising thermoelectric material but also promote the fascinating vacancy-mediated anomalous transport properties for multidisciplinary explorations.
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Affiliation(s)
- Wuyang Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA
| | - Wenhua Xue
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, 100190, People's Republic of China
| | - Shuping Guo
- Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany
| | - Ran He
- Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany
| | - Liangzi Deng
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA
| | - Shaowei Song
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA
| | - Andrei Sotnikov
- Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany
| | - Kornelius Nielsch
- Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany
| | - Jeroen van den Brink
- Leibniz Institute for Solid State and Materials Research, Dresden, 01069, Germany
| | - Guanhui Gao
- Department of Materials Science and Nano-Engineering, Rice University, Houston, TX, 77005, USA
| | - Shuo Chen
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA
| | - Yimo Han
- Department of Materials Science and Nano-Engineering, Rice University, Houston, TX, 77005, USA
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China
| | - Ching-Wu Chu
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Yumei Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing, 100190, People's Republic of China.
| | - Zhifeng Ren
- Department of Physics and Texas Center for Superconductivity at the University of Houston (TcSUH), Houston, TX, 77204, USA.
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28
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Li A, Brod MK, Wang Y, Hu K, Nan P, Han S, Gao Z, Zhao X, Ge B, Fu C, Anand S, Snyder GJ, Zhu T. Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d-d Orbital Interactions. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302086. [PMID: 37271926 PMCID: PMC10427359 DOI: 10.1002/advs.202302086] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 05/11/2023] [Indexed: 06/06/2023]
Abstract
Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d-d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d-d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg1- x Tix NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.
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Affiliation(s)
- Airan Li
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Madison K. Brod
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Yuechu Wang
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Kejun Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information TechnologyAnhui UniversityHefei230601China
| | - Pengfei Nan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information TechnologyAnhui UniversityHefei230601China
| | - Shen Han
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Ziheng Gao
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Xinbing Zhao
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information TechnologyAnhui UniversityHefei230601China
| | - Chenguang Fu
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
| | - Shashwat Anand
- Materials Sciences DivisionLawrence Berkeley National LaboratoryBerkeleyCA94720USA
| | - G. Jeffrey Snyder
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Tiejun Zhu
- State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310058China
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29
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Allan L, Mulwa WM, Mwabora JM, Musembi RJ, Mapasha R. An ab-initio study of P-type ZrCoY (Y[bond, double bond]Sb and Bi) half - Heusler semiconductors. Heliyon 2023; 9:e18531. [PMID: 37554828 PMCID: PMC10404955 DOI: 10.1016/j.heliyon.2023.e18531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Revised: 07/19/2023] [Accepted: 07/20/2023] [Indexed: 08/10/2023] Open
Abstract
In this study, the structural, electronic, mechanical, optical, and thermoelectric properties of the cubic half-Heusler compound ZrCoY(Y[bond, double bond]Sb and Bi) obtained using first-principles calculations are presented. The following exchange-correlation functionals have been employed: Generalized Gradient Approximation with Perdew-Burke-Ernzerhoff (GGA-PBE), Generalized Gradient Approximation with Perdew-Burke-Enzerhoff for solids (GGA-PBESol) and Local Density Approximation (LDA). Both ZrCoSb and ZrCoBi compounds are mechanically and dynamically stable, based on the elastic and phonon properties analysis. The calculated electronic band gaps for both compounds are about 1 eV, as predicted by all the three functionals. Since it is noted that GGA-PBE functional is most favourable for predicting structural properties and the energetic stability of ZrCoSb and ZrCoBi compounds, it is further used to calculate their thermoelectric properties. Within the energy range of 0-40 eV, the refractive index, dielectric constant, and energy loss function of ZrCoSb and ZrCoBi compounds are calculated. The possibility of electronic transition from the valence band maximum (VBM) to the conduction minimum band (CBM) is confirmed by the occurrence of absorption peaks in the visible range. For the evaluation of thermoelectric properties, the p-type and n-type doping attained Seebeck coefficients of 1800 and -1800 μVK-1 at 300 K, respectively. The maximum peak of 17 × 1011 W/m s K2 is attained in n-type doping, according to the power factor results.
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Affiliation(s)
- Lynet Allan
- Department of Physics, Faculty of Science and Technology, University of Nairobi, P.O.Box 30197-00100, Nairobi, Kenya
| | - Winfred M. Mulwa
- Department of Physics, Faculty of Science, Egerton University, P.O Box 536-20115, Egerton, Kenya
| | - Julius M. Mwabora
- Department of Physics, Faculty of Science and Technology, University of Nairobi, P.O.Box 30197-00100, Nairobi, Kenya
| | - Robinson J. Musembi
- Department of Physics, Faculty of Science and Technology, University of Nairobi, P.O.Box 30197-00100, Nairobi, Kenya
| | - R.E. Mapasha
- Department of Physics, University of Pretoria,Private Bag x 20, Hatfield, South Africa
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30
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Eggert B, Çakır A, Günzing D, Josten N, Scheibel F, Brand RA, Farle M, Acet M, Wende H, Ollefs K. Formation of precipitates in off-stoichiometric Ni-Mn-Sn Heusler alloys probed through the induced Sn-moment. RSC Adv 2023; 13:18217-18222. [PMID: 37333792 PMCID: PMC10269055 DOI: 10.1039/d3ra01420g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Accepted: 06/06/2023] [Indexed: 06/20/2023] Open
Abstract
The shell-ferromagnetic effect originates from the segregation process in off-stoichiometric Ni-Mn-based Heusler alloys. In this work, we investigate the precipitation process of L21-ordered Ni2MnSn and L10-ordered NiMn in off-stoichiometric Ni50Mn45Sn5 during temper annealing, by X-ray diffraction (XRD) and 119Sn Mössbauer spectroscopy. While XRD probes long-range ordering of the lattice structure, Mössbauer spectroscopy probes nearest-neighbour interactions, reflected in the induced Sn magnetic moment. As shown in this work, the induced magnetic Sn moment can be used as a detector for microscopic structural changes and is, therefore, a powerful tool for investigating the formation of nano-precipitates. Similar research can be performed in the future, for example, on different pinning type magnets like Sm-Co or Nd-Fe-B.
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Affiliation(s)
- Benedikt Eggert
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Aslı Çakır
- Department of Metallurgical and Materials Engineering, Muğla Sıtkı Koçman University 48000 Mugla Turkey
| | - Damian Günzing
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Nicolas Josten
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Franziska Scheibel
- Functional Materials, Institute of Materials Science, Technische Universität Darmstadt 64287 Darmstadt Germany
| | - Richard A Brand
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Michael Farle
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Mehmet Acet
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Heiko Wende
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
| | - Katharina Ollefs
- Faculty of Physics, Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen Lotharstr. 1 47057 Duisburg Germany
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Yadav K, Mukherjee K. Evidence of multi-band superconductivity in non-centrosymmetric full Heusler alloy LuPd 2Sn. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:275601. [PMID: 36996839 DOI: 10.1088/1361-648x/acc919] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Accepted: 03/30/2023] [Indexed: 06/19/2023]
Abstract
In this work, evidence of multi-band superconductivity and presence of mixed parity states in full Heusler alloy LuPd2Sn is investigated using the x-ray diffraction, temperature and field dependent resistivity, temperature dependent magnetization, and heat capacity measurements. Our studies reveal that LuPd2Sn is a type II superconductor and undergoes superconducting transition below 2.5 K. Above 2.5 K, the temperature and field dependence of resistivity indicate to the presence of multiple bands and inter-band phonon assisted scattering. The upper critical field,HC2(T) exhibits linear behaviour and deviates from Werthamer, Helfand and Hohenberg model over the measured temperature range. Additionally, the Kadowaki-Woods ratio plot supports the unconventional superconductivity in this alloy. Moreover, a significant deviation from the s-wave behaviour is noted, which is studied using phases fluctuation analysis. It indicates the presence of spin triplet along with spin singlet component arising due to antisymmetric spin orbit coupling.
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Affiliation(s)
- Kavita Yadav
- School of Physical Sciences, Indian Institute of Technology, Mandi, HP 175075, India
| | - K Mukherjee
- School of Physical Sciences, Indian Institute of Technology, Mandi, HP 175075, India
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32
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Wei J, Guo Y, Wang G. Exploring structural, mechanical, and thermoelectric properties of half-Heusler compounds RhBiX (X = Ti, Zr, Hf): A first-principles investigation. RSC Adv 2023; 13:11513-11524. [PMID: 37063731 PMCID: PMC10094984 DOI: 10.1039/d3ra01262j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Accepted: 03/30/2023] [Indexed: 04/18/2023] Open
Abstract
In this study, the full potential linearization enhanced plane wave method in density functional theory is used. Additionally, the structure, mechanical, and thermoelectric properties of half-Heusler compounds RhBiX (X = Ti, Zr, Hf) are investigated for the first time. The indirect semiconductors RhBiTi and RhBiZr have 0.89 and 1.06 eV bandgap energies, respectively. In contrast, RhBiHf is a direct bandgap semiconductor with a bandgap energy of 0.33 eV. The thermoelectric parameters such as Seebeck coefficient, power factor, electronic conductivity, lattice thermal conductivity, electronic thermal conductivity, and figure of merit ZT, are studied with the semi-classical Boltzmann transport theory. When T = 300 K, RhBiTi, RhBiZr, and RhBiHf show small lattice thermal conductivities, i.e., 10.60, 10.15, and 7.71 W mK-1, respectively, which are consistent with related other studies. The maximum ZT values of RhBiTi, RhBiZr, and RhBiXHf are 0.91, 0.94, and 0.79 at 900 K, respectively. Furthermore, we observed that RhBiX (X = Ti, Zr, Hf) alloy is a thermoelectric material with great potential.
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Affiliation(s)
- Junhong Wei
- School of Science, Henan Institute of Technology Xinxiang 453003 China
| | - Yongliang Guo
- School of Science, Henan Institute of Technology Xinxiang 453003 China
| | - Guangtao Wang
- School of Physics, Henan Normal University Xinxiang 453007 China
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33
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Sadia Y, Lumbroso D, Gelbstein Y. High-ZT Due to the Influence of Copper in Ti(Ni 1-xCu x)Sn. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1902. [PMID: 36903017 PMCID: PMC10004661 DOI: 10.3390/ma16051902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Revised: 01/20/2023] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni1-xCux)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti6Sn5 and Ti5Sn3 precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325-750 K showing a 125% improvement over the undoped sample of TiNiSn.
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Affiliation(s)
- Yatir Sadia
- The Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8400711, Israel
- Nuclear Research Center of the Negev, NRCN, Beer-Sheva 8400711, Israel
| | - Dan Lumbroso
- The Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8400711, Israel
| | - Yaniv Gelbstein
- The Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8400711, Israel
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Wang X, Sheng Y, Ning J, Xi J, Xi L, Qiu D, Yang J, Ke X. A Critical Review of Machine Learning Techniques on Thermoelectric Materials. J Phys Chem Lett 2023; 14:1808-1822. [PMID: 36763950 DOI: 10.1021/acs.jpclett.2c03073] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Thermoelectric (TE) materials can directly convert heat to electricity and vice versa and have broad application potential for solid-state power generation and refrigeration. Over the past few decades, efforts have been made to develop new TE materials with high performance. However, traditional experiments and simulations are expensive and time-consuming, limiting the development of new materials. Machine learning (ML) has been increasingly applied to study TE materials in recent years. This paper reviews the recent progress in ML-based TE material research. The application of ML in predicting and optimizing the properties of TE materials, including electrical and thermal transport properties and optimization of functional materials with targeted TE properties, is reviewed. Finally, future research directions are discussed.
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Affiliation(s)
- Xiangdong Wang
- Materials Genome Institute, Shanghai University, Shanghai200444, China
- School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
| | - Ye Sheng
- Materials Genome Institute, Shanghai University, Shanghai200444, China
| | - Jinyan Ning
- Materials Genome Institute, Shanghai University, Shanghai200444, China
| | - Jinyang Xi
- Materials Genome Institute, Shanghai University, Shanghai200444, China
- Zhejiang Laboratory, Hangzhou, Zhejiang311100, China
| | - Lili Xi
- Materials Genome Institute, Shanghai University, Shanghai200444, China
- Zhejiang Laboratory, Hangzhou, Zhejiang311100, China
| | - Di Qiu
- Materials Genome Institute, Shanghai University, Shanghai200444, China
- Zhejiang Laboratory, Hangzhou, Zhejiang311100, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai200444, China
- Zhejiang Laboratory, Hangzhou, Zhejiang311100, China
| | - Xuezhi Ke
- School of Physics and Electronic Science, East China Normal University, Shanghai200241, China
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35
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Sun H, Jiang L, Zheng Y. Tunable surface magnetism by gate voltage in a slab of nonmagnetic half-Heusler compound CoTiSb. J Chem Phys 2023; 158:064705. [PMID: 36792505 DOI: 10.1063/5.0136807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023] Open
Abstract
The electrical manipulation of magnetization is appealing to the relevant experiment and spintronic device. In this paper, we focus on the electrical and magnetic properties of a thin film cleaved from the nonmagnetic half-Heusler compound CoTiSb. By means of the first-principles calculations, we find that the surface of TiSb termination possesses ferrimagnetism with a magnetic moment of 0.35 (0.49) μB per unit cell without (with) Hubbard U, which can persist below the Curie temperature of 48 (54) K. What is more, such a surface magnetism can be tuned to nonmagnetism by gate-induced hole doping with a concentration of 2.83 × 1014 (3.55 × 1014) cm-2. This magnetic tunability of the CoTiSb slab provides a platform to realize the pseudo-spin valve with both the magnetic electrodes and nonmagnetic space layer made of the same material without hetero-interfaces.
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Affiliation(s)
- He Sun
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Liwei Jiang
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Yisong Zheng
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
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36
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Khan W, Gul B, Din H, Azam S, Asghar H, Aftab S, Ali HE. First principle study of strain tunable electronic and optical properties of half-Heusler alloys XCoGe (X=V, Nb, Ta). J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2022.123827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
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37
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Rabin D, Fuks D, Gelbstein Y. Alloying effect on the lattice thermal conductivity of MNiSn half-Heusler alloys. Phys Chem Chem Phys 2023; 25:520-528. [DOI: 10.1039/d2cp04653a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
The lattice thermal conductivity of MNiSn (M = Ti, Zr, Hf) half-Heusler (HH) alloys was studied.
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Affiliation(s)
| | - David Fuks
- Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
| | - Yaniv Gelbstein
- Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, 84105, Israel
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38
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Hamadani BH. 2.11 - Accurate characterization of indoor photovoltaic performance. JPHYS MATERIALS 2023; 6:10.1088/2515-7639/acc550. [PMID: 37965623 PMCID: PMC10644663 DOI: 10.1088/2515-7639/acc550] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
Abstract
Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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Verma P, Singh C, Kamlesh PK, Kaur K, Verma AS. Nowotny-Juza phase KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds: applicability in photovoltaics and thermoelectric generators. J Mol Model 2022; 29:23. [PMID: 36575325 DOI: 10.1007/s00894-022-05433-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2022] [Accepted: 12/20/2022] [Indexed: 12/29/2022]
Abstract
In the present research, we have considered KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds to study their inherent properties and have used FP-LAPW + lo scheme with density functional theory based WIEN2k package. The structural and band structural parameters have been explained, and various optical, thermoelectric, and thermodynamic parameters of half-Heuslers have also been analyzed in detail. The trend followed by the lattice constant of these materials approves the reliability of this investigation. The band structures show all the materials are direct band gap semiconductors except KBeN. Here, we have noticed that absorption is highest, and optical conductivity is also highest, confirming the theoretical concept and thus the accuracy of the projected outcomes. All materials (except KBeBi) show a figure of merit near unity in both p- and n-regions, and a small decay is observed with increasing temperature, which affirms their potential as thermoelectric candidates in both p- and n-regions at room temperature. Since conventional resources are limited in nature and their vanishing rate is more than their reproduction rate, hence to fulfil the high energy demand, it has become necessary to search for renewable energy resources. Herein, the values of optical and thermoelectric parameters confirm the photovoltaic and thermoelectric applications of these materials.
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Affiliation(s)
- Pallavi Verma
- Department of Physics, Agra College, Agra, 282002, India
| | | | | | - Kulwinder Kaur
- Department of Physics, Mehr Chand Mahajan DAV College for Women, Chandigarh, 160036, India
| | - Ajay Singh Verma
- Division of Research & Innovation, School of Applied and Life Sciences, Uttaranchal University, Uttarakhand, Dehradun, 248007, India.
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40
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Mishra V, Kumar A, Pandey L, Gupta NK, Hait S, Barwal V, Sharma N, Kumar N, Chandra S, Chaudhary S. Disordered spin gapless semiconducting CoFeCrGa Heusler alloy thin films on Si (100): experiment and theory. NANOSCALE 2022; 15:337-349. [PMID: 36503983 DOI: 10.1039/d2nr03424g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Spin gapless semiconductors (SGSs) are an intriguing class of quantum materials that bridge the gap between half-metallic ferromagnets and semiconductors. The presence of a semiconducting bandgap for one spin channel and zero band gap for other spin channels, together with the possibility of four different band structure configurations, makes them one of the most desirable candidates to be used in tunable spin transport based spintronics devices. Here, we have performed various structural, magnetic and transport measurements on an optimized CoFeCrGa (CFCG) Heusler alloy thin film (∼50 nm) grown over a Si(100) substrate using an industry-viable magnetron sputtering technique. The grown film showed B2-ordering under the given set of X-ray diffraction measurement conditions with a saturation magnetization (Ms) of 1.86μB per f.u. (at 5 K) and a Curie temperature of ∼595 K. Nearly linearly varying longitudinal resistivity with a negative temperature coefficient was observed. A fitted longitudinal conductivity curve through a "two-carrier model" shows a slight band overlap in the gapless channel for one spin channel and a small energy gap (ΔE) of 167 meV for other spin channels. A negative and linear out-of-plane magnetoresistance response was observed in these films. The temperature dependent anomalous Hall effect measurement gives nearly temperature independent carrier concentration (and/or) mobility with an anomalous Hall conductivity of 91.35 S cm-1 at 5 K. The first principles calculations have also been performed for bulk and (220) CFCG surfaces to correlate the various structural, electronics and magnetic properties of the optimized CFCG Heusler alloy thin film. The DFT derived results, viz. lattice parameter and MS exhibit a good match with the experimentally observed results. All these properties collectively imply that the grown film possesses disordered-SGS like behaviour. It is remarkable to note that CFCG films with the (022) surface possess a very high electronic spin polarization of 91%. The results of the study suggest that CFCG is a potential candidate to be used in spintronics-based devices such as spin-injectors.
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Affiliation(s)
- Vireshwar Mishra
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Amar Kumar
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Lalit Pandey
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Nanhe Kumar Gupta
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Soumyarup Hait
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Vineet Barwal
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Nikita Sharma
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Nakul Kumar
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
| | - Sharat Chandra
- Indira Gandhi Centre for Atomic Research, HBNI, Kalpakkam, Tamilnadu-603102, India
| | - Sujeet Chaudhary
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
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41
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Chatterjee S, Sau J, Ghosh S, Samanta S, Ghosh B, Kumar M, Mandal K. Anomalous Hall effect in topological Weyl and nodal-line semimetal Heusler compound Co 2VAl. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 51:035601. [PMID: 36343373 DOI: 10.1088/1361-648x/aca0d7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 11/07/2022] [Indexed: 06/16/2023]
Abstract
Magnetic topological semimetals (TSMs) with broken time-reversal symmetry are very rare and have drawn significant attention in condensed matter physics due to their numerous intriguing topological properties. Among these various magnetic TSMs, Co2-based full Heusler compounds are of current interest, since a few of these materials exhibit Weyl and nodal fermions in their topological band structure. In this work, we report a comprehensive study of anomalous Hall effect (AHE) in the ferromagnetic full Heusler compound Co2VAl. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of the occupied electronic Bloch states. The present study of Co2VAl attempts to understand and explore the possibility of topology-induced AHE. The anomalous Hall resistivityρxyAis observed to scale quadratically with the longitudinal resistivityρxx. Our experimental results also reveal that the anomalous Hall conductivity (AHC) is ∼85 cm-1at 2 K with an intrinsic contribution of ∼75.6 S cm-1, and is nearly insensitive to temperature. The first principle calculations note that the Berry curvature originated from a gapped nodal line and symmetry-protected Weyl nodes near the Fermi level (EF) is the main source of AHE in this compound. Thus, this investigation on Co2VAl discloses that it is a ferromagnetic Weyl and nodal-line TSM. The theoretically calculated AHC is in well agreement with the experimentally obtained AHC.
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Affiliation(s)
- Sudipta Chatterjee
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Jyotirmay Sau
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Subrata Ghosh
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Saheli Samanta
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Barnali Ghosh
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Manoranjan Kumar
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
| | - Kalyan Mandal
- S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India
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42
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First-principles calculations to investigate structural stability, half-metallic behavior, thermophysical and thermoelectric properties of Co2YAl (Y= Mo, Tc) Full Heusler compounds. COMPUT THEOR CHEM 2022. [DOI: 10.1016/j.comptc.2022.113943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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43
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Kalsoom T, Nazir S. Thermodynamics, electronic, and magnetic properties of Cr-doped Cr 2CoAl: Biaxial ([110]) strain impact. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2022; 150:106934. [DOI: 10.1016/j.mssp.2022.106934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
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Shi Q, Li J, Zhao X, Chen Y, Zhang F, Zhong Y, Ang R. Comprehensive Insight into p-Type Bi 2Te 3-Based Thermoelectrics near Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:49425-49445. [PMID: 36301226 DOI: 10.1021/acsami.2c13109] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.
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Affiliation(s)
- Qing Shi
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen518055, China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yiyuan Chen
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Fujie Zhang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yan Zhong
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu610065, China
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45
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Sofronie M, Popescu B, Enculescu M, Tolea M, Tolea F. Processing Effects on the Martensitic Transformation and Related Properties in the Ni 55Fe 18Nd 2Ga 25 Ferromagnetic Shape Memory Alloy. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3667. [PMID: 36296857 PMCID: PMC9610951 DOI: 10.3390/nano12203667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 10/14/2022] [Accepted: 10/16/2022] [Indexed: 06/16/2023]
Abstract
The influence of processing on the martensitic transformation and related magnetic properties of the Ni55Fe18Nd2Ga25 ferromagnetic shape memory alloy, as bulk and ribbons prepared by the melt spinning method and subjected to different thermal treatments, is investigated. Structural, calorimetric, and magnetic characterizations are performed. Thermal treatment at 1173 K induces a decrease in both the Curie and the martensitic transformation temperatures, while a treatment at 673 K produces the structural ordering of the ribbons, hence an increase in TC. A maximum value of the magnetic entropy variation of -5.41 J/kgK was recorded at 310 K for the as quenched ribbons. The evaluation of the magnetoresistive effect shows a remarkable value of -13.5% at 275 K on the bulk sample, which is much higher than in the ribbons.
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Affiliation(s)
| | | | | | | | - Felicia Tolea
- National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
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46
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True colours shining through: Determining site distributions in coloured Li-containing quaternary Heusler compounds. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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47
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Zhang W, Berthebaud D, Halet JF, Mori T. Electronic Configurations of 3d Transition-Metal Compounds Using Local Structure and Neural Networks. J Phys Chem A 2022; 126:7373-7381. [PMID: 36178210 DOI: 10.1021/acs.jpca.2c03901] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Machine learning (ML) methods extract statistical relationships between inputs and results. When the inputs are solid-state crystal structures, structure-property relationships can be obtained. In this work, we investigate whether a simple neural network is able to learn the 3d orbital occupations for the transition-metal (TM) centers in crystalline inorganic solid-state compounds using only the local structure around the transition-metal centers described by rotationally invariant fingerprints based on spherical harmonics and one-hot elemental encoding. A multilayer neural network trained on density functional theory (DFT) results of about 1800 samples was developed and showed good performance in predicting the TM orbital occupations (for both spin channels). We study in detail how the local structure affects the predictions of the local properties and how they provide physical insights for the design of a future machine learning model for materials chemistry. The proposed ML method is illustrated in practical application by predicting local magnetic moments of the transition-metal atoms in a full set of inorganic structures with large unit cells. Although less accurate compared to the experimental data, the ML results compared well with the DFT results, suggesting the feasibility of electronic property prediction based only on structure input.
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Affiliation(s)
- Wenhao Zhang
- WPI-MANA, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba305-0044, Japan.,Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1-1-1, Tsukuba305-8671, Japan
| | - David Berthebaud
- CNRS-Saint-Gobain-NIMS, IRL 3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba305-0044, Japan
| | - Jean-François Halet
- CNRS-Saint-Gobain-NIMS, IRL 3629, Laboratory for Innovative Key Materials and Structures (LINK), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba305-0044, Japan
| | - Takao Mori
- WPI-MANA, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba305-0044, Japan.,Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1-1-1, Tsukuba305-8671, Japan
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Kochetov NA. The Effect of the Magnesium Content and Mechanical Activation on Combustion in the Ni + Al + Mg System. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B 2022. [DOI: 10.1134/s1990793122040078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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Serrano-Sanchez F, Yao M, He B, Chen D, Gloskovskii A, Fedorov A, Auffermann G, Liu E, Burkhardt U, Fecher GH, Fu C, Felser C, Pan Y. Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals. NANOSCALE 2022; 14:10067-10074. [PMID: 35791918 PMCID: PMC9302267 DOI: 10.1039/d2nr02556f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Accepted: 06/20/2022] [Indexed: 06/15/2023]
Abstract
Band structure engineering has a strong beneficial impact on thermoelectric performance, where theoretical methods dominate the investigation of electronic structures. Here, we use angle-resolved photoemission spectroscopy (ARPES) to analyze the electronic structure and report on the thermoelectric transport properties of half-Heusler TiCoSb high-quality single crystals. High degeneracy of the valence bands at the L and Γ band maximum points was observed, which provides a band-convergence scenario for the thermoelectric performance of TiCoSb. Previous efforts have shown how crystallographic defects play an important role in TiCoSb transport properties, while the intrinsic properties remain elusive. Using hard X-ray photoelectron spectroscopy (HAXPES), we discard the presence of interstitial defects that could induce in-gap states near the valence band in our crystals. Contrary to polycrystalline reports, intrinsic TiCoSb exhibits p-type transport, albeit defects still affect the carrier concentration. In two initially identical p-type TiCoSb crystal batches, distinct metallic and semiconductive behaviors were found owing to defects not noticeable by elemental analysis. A varying Seebeck effective mass is consistent with the change at the Fermi level within this band convergence picture. This report tackles the direct investigation of the electronic structure of TiCoSb and reveals new insights and the strong impact of point defects on the optimization of thermoelectric properties.
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Affiliation(s)
| | - Mengyu Yao
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Bin He
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Dong Chen
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | | | - Alexander Fedorov
- Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany
- Institute for Solid State Research, Leibniz IFW Dresden, 01069 Dresden, Germany
| | - Gudrun Auffermann
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Enke Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ulrich Burkhardt
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Gerhard H Fecher
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Chenguang Fu
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
| | - Yu Pan
- Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany.
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50
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Quintero MA, Shen J, Laing CC, Wolverton C, Kanatzidis MG. Cubic Stuffed-Diamond Semiconductors LiCu 3TiQ 4 (Q = S, Se, and Te). J Am Chem Soc 2022; 144:12789-12799. [PMID: 35797169 DOI: 10.1021/jacs.2c03501] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Lithium chalcogenides have been understudied, owing to the difficulty in managing the chemical reactivity of lithium. These materials are of interest as potential ion conductors and thermal neutron detectors. In this study, we describe three new cubic lithium copper chalcotitanates that crystallize in the P4̅3m space group. LiCu3TiS4, a = 5.5064(6) Å, and LiCu3TiSe4, a = 5.7122(7) Å, represent two members of a new stuffed diamond-type crystal structure, while LiCu3TiTe4, a = 5.9830(7) Å crystallized into a similar structure exhibiting lithium and copper mixed occupancy. These structures can be understood as hybrids of the zinc-blende and sulvanite structure types. In situ powder X-ray diffraction was utilized to construct a "panoramic" reaction map for the preparation of LiCu3TiTe4, facilitating the design of a rational synthesis and uncovering three new transient phases. LiCu3TiS4 and LiCu3TiSe4 are thermally stable up to 1000 °C under vacuum, while LiCu3TiTe4 partially decomposes when slowly cooled to 400 °C. Density functional theory calculations suggest that these compounds are indirect band gap semiconductors. The measured work functions are 4.77(5), 4.56(5), and 4.69(5) eV, and the measured band gaps are 2.23(5), 1.86(5), and 1.34(5) eV for the S, Se, and Te analogues, respectively.
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Affiliation(s)
- Michael A Quintero
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Jiahong Shen
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Craig C Laing
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Christopher Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
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