Simple rules for the understanding of Heusler compounds

A systematic first-principles investigation of the structural, electronic, mechanical, optical, and thermodynamic properties of Half-Heusler ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) for spintronics and optoelectronics applications

This paper is the first to look at the structural, electronic, mechanical, optical, and thermodynamic properties of the ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) half-Heusler (HH) using DFT based first principles method. The lattice parameters that we have calculated are very similar to those obtained in prior investigations with theoretical and experimental data. The positive phonon dispersion curve confirm the dynamical stability of ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The electronic band structure and DOS confirmed that the studied materials ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) are direct band gap semiconductors. The investigation also determined significant constants, including dielectric function, absorption, conductivity, reflectivity, refractive index, and loss function. These optical observations unveiled our compounds potential utilization in various electronic and optoelectronic device applications. The elastic constants were used to fulfill the Born criteria, confirming the mechanical stability and ductility of the solids ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn). The calculated elastic modulus revealed that our studied compounds are elastically anisotropic. Moreover, ANiX (ASc, Ti, Y, Zr, Hf; XBi, Sn) has a very low minimum thermal conductivity (Kmin), and a low Debye temperature (θD), which indicating their appropriateness for utilization in thermal barrier coating (TBC) applications. The Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are determined by calculations derived from the phonon density of states.

Making High Thermoelectric and Superior Mechanical Performance Nb0.88Hf0.12FeSb Half-Heusler via Additive Manufacturing

Thermoelectric generators held great promise through energy harvesting from waste heat. Their practical application, however, is greatly constrained by poor raw material utilization and tedious processing in fabricating desired shapes. Herein, a state-of-the-art process is reported for 3D printing the half-Heusler (Nb0.88Hf0.12FeSb) thermoelectric material using laser powder bed fusion (LPBF). The multi-dimensional intra- and inter-granular defects created by this process greatly suppress thermal conductivity by providing numerous phonon scattering centers. The resulting LPBF-fabricated half-Heusler exhibits a high figure of merit ≈1.2 at 923 K and a single-leg maximum efficiency of ≈3.3% at a temperature difference (ΔT) of 371 K. Hafnium oxide nanoparticles generated during LPBF effectively prevent crack propagation, ensuring competent mechanical performance and reliable thermoelectric output. The findings highlight the significant potential of LPBF in driving the next industrial revolution of highly efficient and customizable thermoelectric materials.

High Milling Time Influence on the Phase Stability and Electrical Properties of Fe50Mn35Sn15 Heusler Alloy Obtained by Mechanical Alloying

Fe50Mn35Sn15 Heusler alloy, obtained by mechanical alloying, was subjected to larger milling times in the range of 30-50 h to study the phase stability and morphology. X-ray diffraction studies have shown that the milled samples crystallise in a disordered A2 structure. The A2 structure was found to be stable in the milling range studied, contrary to the computation studies performed on this composition. Using Rietveld refinements, the lattice parameter, mean crystallite size, and lattice strain were computed. The nature of the obtained phases by milling was found to be nanocrystalline with values below 50 nm. A linear increase rate of 0.00713 (h-1) was computed for lattice strain as the milling time increased. As the milling time increases, the lattice parameter of the cubic Heusler was found to have a decreasing behaviour, reaching 2.9517 Å at 50 h of milling. The morphological and elemental distribution-characterised by scanning electron microscopy and energy-dispersive X-ray spectroscopy-evidenced Mn and Sn phase clustering. As the milling time increased, the morphology of the sample was found to change. The Mn and Sn cluster size was quantified by elemental line profile. Electrical resistivity evolution with milling time was analysed, showing a peak for 40 h of milling time.

Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

High-Throughput Screening of All-d-Metal Heusler Alloys for Magnetocaloric Applications

Due to their versatile composition and customizable properties, A2BC Heusler alloys have found applications in magnetic refrigeration, magnetic shape memory effects, permanent magnets, and spintronic devices. The discovery of all-d-metal Heusler alloys with improved mechanical properties compared to those containing main group elements presents an opportunity to engineer Heusler alloys for energy-related applications. Using high-throughput density-functional theory calculations, we screened magnetic all-d-metal Heusler compounds and identified 686 (meta)stable compounds. Our detailed analysis revealed that the inverse Heusler structure is preferred when the electronegativity difference between the A and B/C atoms is small, contrary to conventional Heusler alloys. Additionally, our calculations of Pugh ratios and Cauchy pressures demonstrated that ductile and metallic bonding are widespread in all-d-metal Heuslers, supporting their enhanced mechanical behavior. We identified 49 compounds with a double-well energy surface based on Bain path calculations and magnetic ground states, indicating their potential as candidates for magnetocaloric and shape memory applications. Furthermore, by calculating the free energies, we propose that 11 compounds exhibit structural phase transitions and suggest isostructural substitutions to enhance the magnetocaloric effect.

First-principles study of the structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction

Based on first-principles calculations in the density functional theory, we systematically investigated the possible interface structure, magnetism, and electronic properties of the all-Heusler alloy Co2MnGe/CoTiMnGe(100) heterojunction. The calculation indicated that the Co2MnGe Heusler alloy is a half-metal with a magnetic moment of 4.97 μB. CoTiMnGe is a narrow-band gap semiconductor and may act as an ultra-sensitive photocatalyst. We cannot find an "ideal" spin-polarization of 100% in CoCo termination and MnGe termination. Due to the interface interaction, the direct magnetic hybridization or indirect RKKY exchange will be weakened, leading to an increase in the atomic magnetic moment of the interfacial layer. For eight possible heterojunction structures, the half-metallic gaps in the Co2MnGe bulk have been destroyed by the inevitable interface states. The spin-polarization value of 94.31% in the CoCo-TiGe-B heterojunction revealed that it is the most stable structure. It is feasible to search for high-performance magnetic tunnel junction by artificially constructing suitable all-Heusler alloy heterojunctions.

Influence of Long Milling Time on the Electrical Resistivity of Nanocrystalline Ni2MnSn Heusler Alloy Obtained by Mechanosynthesis

A Ni2MnSn Heusler alloy was obtained as a single B2 phase after 12 h of mechanical milling. The influence of prolonged milling on the phase stability was analysed for milling times up to 50 h, related to mean crystallite size, lattice strain, and electrical resistivity. The nature of the powders in the milled range was found to be nanocrystalline, with a mean crystallite size of about 33 ± 2 nm. An evaluation of the internal stresses induced by milling was performed, a linear behaviour was found, and a coefficient of the internal stress increase with milling time was proposed. Particle size distributions of milled samples were analysed, and the morphology of the powders was visualised by scanning electron microscopy. The elemental distribution of milled samples was quantified by energy-dispersive X-ray spectroscopy. Electrical resistivity measurements were performed on compacted samples, and their behaviour with milling time was analysed.

Turning Ultra-Low Coercivity and Ultra-High Temperature Stability Within 897 K via Continuous Crystal Ordering Fluctuations

High-performance soft magnetic materials are important for energy conservation and emission reduction. One challenge is achieving a combination of reliable temperature stability, high resistivity, high Curie temperature, and high saturation magnetization in a single material, which often comes at the expense of intrinsic coercivity-a typical trade-off in the family of soft magnetic materials with homogeneous microstructures. Herein, a nanostructured FeCoNiSiAl complex concentrated alloy is developed through a hierarchical structure strategy. This alloy exhibits superior soft magnetic properties up to 897 K, maintaining an ultra-low intrinsic coercivity (13.6 A m-1 at 297 K) over a wide temperature range, a high resistivity (138.08 µΩ cm-1 at 297 K) and the saturation magnetization with only a 16.7% attenuation at 897 K. These unusual property combinations are attributed to the dual-magnetic-state nature with exchange softening due to continuous crystal ordering fluctuations at the atomic scale. By deliberately controlling the microstructure, the comprehensive performance of the alloy can be tuned and controlled. The research provides valuable guidance for the development of soft magnetic materials for high-temperature applications and expands the potential applications of related functional materials in the field of sustainable energy.

First principle study of scandium-based novel ternary half Heusler ScXGe (X = Mn and Fe) alloys: insight into the spin-polarized structural, electronic, and magnetic properties

The structural, electronic, and magnetic properties of novel half-Heusler alloys ScXGe (X = Mn, Fe) are investigated using the first principle full potential linearized augmented plane wave approach based on density functional theory (DFT). To attain the desired outcomes, we employed the exchange-correlation frameworks, specifically the local density approximation in combination with Perdew, Burke, and Ernzerhof's generalized gradient approximation plus the Hubbard U parameter method (GGA + U) to highlight the strong exchange-correlation interaction in these alloys. The structural parameter optimizations, whether ferromagnetic (FM) or nonmagnetic (NM), reveal that all ScXGe (where X = Mn, Fe) Heusler alloys attain their lowest ground state energy during FM optimization. The examination of the electronic properties of these alloys reveals their metallic character in both the spin-up and spin-down channels. The projected densities of states indicate that bonding is achieved through the hybridization of p-d and d-d states in all of the compounds. The investigation of the magnetic properties in ScXGe (where X = Mn, Fe) compounds indicates pronounced stability in their ferromagnetic state. Notably, the Curie temperatures for ScXGe (X = Mn, Fe) are determined to be 2177.02 K and 1656.09 K, respectively. The observation of metallic behavior and the strong ferromagnetic characteristics in ScXGe (X = Mn, Fe) half-Heusler alloys underscores their potential significance in the realm of spintronic devices. Consequently, our study serves as a robust foundation for subsequent experimental validation.

Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co2FeAl/n-GaAs Heterojunction

The ultrafast manipulation of spin in ferromagnet-semiconductor (FM/SC) heterojunctions is a key issue for advancing spintronics, where magnetic damping and interfacial spin transport often define device efficiency. Leveraging selective optical excitation in semiconductors offers a unique approach to spin manipulation in FM/SC heterojunctions. Herein, we investigated the magnetic dynamics of a Co2FeAl/n-GaAs heterojunction using the time-resolved magneto-optical Kerr technique and observed the considerably enhanced magnetic damping of Co2FeAl when GaAs is photoexcited near its band edge. This enhancement is attributed to an enhanced spin-pumping effect facilitated by spin-dependent carrier tunneling and capture within the Co2FeAl layer. Moreover, circularly polarized light excites spin-polarized band-edge photocarriers, further impacting the magnetic damping of Co2FeAl through an additional optical spin-transfer torque on the magnetic moment of Co2FeAl. Our results provide a valuable reference for manipulating spin-pumping and interfacial spin transport in FM/SC heterojunctions, showcasing the advantage of optical control of semiconductor photocarriers for the ultrafast manipulation of magnetic dynamics and interfacial spin transfer.

Signatures of nearly compensated magnetism and spin glass behavior in highly frustrated β-Mn-type Mn50Fe25+xAl25-x Heusler alloys

The present study examines the effect of Fe/Al concentration on the structural and magnetic properties of Mn-rich Mn50Fe25+xAl25-x (x = 5, 10, 15) Heusler alloys through x-ray diffraction, temperature- and field-dependent DC magnetization, thermoremanent magnetization, magnetic memory effect, AC susceptibility measurements, and DFT calculations. The samples crystallize in a cubic β-Mn structure. The trend shows a reduction in lattice parameters (unit cell volume) with the increasing Fe proportion. These alloys exhibit strong antiferromagnetic interactions with large frustration parameters, indicating the presence of competing magnetic interactions. The DC magnetization data reveal spin glass-like features with a peak at spin glass freezing temperature (Tf). The observation of bifurcation in temperature-dependent zero-field-cooled and field-cooled magnetization curves, exponential dependence of the temperature variation of remanence and coercivity, magnetic relaxation, and magnetic memory effect below Tf support the spin-glass character of these alloys. The frequency dependence of Tf is also examined in the context of dynamic scaling laws, such as the Vogel-Fulcher law and critical slowing down model, which further supports the presence of spin glass behavior. In the theoretical DFT calculations, the electronic structure is found to be metallic and similar for both spin projections. Moreover, the antiferromagnetic arrangement of the magnetic moments, in line with the experimental observations, is stabilized by exchange interactions, resulting in an almost compensated total magnetic moment of 0.02-0.38 µB/f.u. This is probably caused by the frustrated structure and non-stoichiometric compositions of Mn50Fe25+xAl25-x.

Strong electron-phonon coupling and high lattice thermal conductivity in half-Heusler thermoelectric materials

Traditional half-Heusler thermoelectric materials, identified as 18-electron compounds, are characterized by the high power factor and the high lattice thermal conductivity. Interestingly, the emerging 19-electron half-Heusler compounds were also found to be promising thermoelectric materials, but with a 5-10 times lower lattice thermal conductivity. Since the two kinds of compounds have similar chemical and physical structures, such as TiCoSb and VCoSb, the large difference in lattice thermal conductivity is a puzzling question. Here, we present a theoretical study to clarify the lattice thermal transport in half-Heusler thermoelectric materials. Based on electronic band structure analysis, we show that the two transition-metal elements in half-Heusler compounds form the strong and direct d-d interaction that is responsible for the high lattice thermal conductivity of 18-electron compounds. In 19-electron half-Heusler compounds, however, the extra valence electron enters the d-d antibonding states, which significantly weakens the atomic bond strength, leading to a large decrease in the cohesive energy. The resulting softened acoustic phonons enhance the phonon-phonon scattering, and thus reduce the lattice thermal conductivity significantly. By constructing an artificial 18-e compound V0.5Sc0.5CoSb, it is proved that the one less electron relative to VCoSb increases the lattice thermal conductivity significantly.

Achieving Compatible p/n-Type Half-Heusler Compositions in Valence Balanced/Unbalanced Mg1-xVxNiSb

In thermoelectric and other inorganic materials research, the significance of half-Heusler (HH) compositions following the 18-electron rule has drawn interest in developing and exploiting the potential of intermetallic compounds. For the fabrication of thermoelectric modules, in addition to high-performance materials, having both p- and n-type materials with compatible thermal expansion coefficients is a prerequisite for module development. In this work, the p-type to n-type transition of valence balanced/unbalanced HH composition of Mg1-xVxNiSb was demonstrated by changing the Mg:V chemical ratio. The Seebeck coefficient and power factor of Ti-doped Mg0.57V0.33Ti0.1NiSb are -130 μV K-1 and 0.4 mW m-1 K-2 at 400 K, respectively. In addition, the reduced lattice thermal conductivity (κL < 2.5 W m-1 K-1 at 300 K) of n-type compositions was reported to be much smaller than κL of conventional HH materials. As high thermal conductivity has long been an issue for HH materials, the synthesis of p- and n-type Mg1-xVxNiSb compositions with low lattice thermal conductivity is a promising strategy for producing high-performance HH compounds. Achieving both p- and n-type materials from similar parent composition enabled us to fabricate a thermoelectric module with maximum output power Pmax ∼ 63 mW with a temperature difference of 390 K. This finding supports the benefit of exploring the huge compositional space of valence balanced/unbalanced quaternary HH compositions for further development of thermoelectric devices.

Alloying-Induced Structural Transition in the Promising Thermoelectric Compound CaAgSb

AMX Zintl compounds, crystallizing in several closely related layered structures, have recently garnered attention due to their exciting thermoelectric properties. In this study, we show that orthorhombic CaAgSb can be alloyed with hexagonal CaAgBi to achieve a solid solution with a structural transformation at x ∼ 0.8. This transition can be seen as a switch from three-dimensional (3D) to two-dimensional (2D) covalent bonding in which the interlayer M-X bond distances expand while the in-plane M-X distances contract. Measurements of the elastic moduli reveal that CaAgSb1-xBix becomes softer with increasing Bi content, with the exception of a steplike 10% stiffening observed at the 3D-to-2D phase transition. Thermoelectric transport measurements reveal promising Hall mobility and a peak zT of 0.47 at 620 K for intrinsic CaAgSb, which is higher than those in previous reports for unmodified CaAgSb. However, alloying with Bi was found to increase the hole concentration beyond the optimal value, effectively lowering the zT. Interestingly, analysis of the thermal conductivity and electrical conductivity suggests that the Bi-rich alloys are low Lorenz-number (L) materials, with estimated values of L well below the nondegenerate limit of L = 1.5 × 10-8 W Ω K-2, in spite of the metallic-like transport properties. A low Lorenz number decouples lattice and electronic thermal conductivities, providing greater flexibility for enhancing thermoelectric properties.

Superconductivity-Electron Count Relationship in Heusler Phases-the Case of LiPd2Si

We report superconductivity in the full Heusler compound LiPd2Si (space group Fm3̅m, No. 225) at a critical temperature of Tc = 1.3 K and a normalized heat capacity jump at Tc, ΔC/γTc = 1.1. The low-temperature isothermal magnetization curves imply type-I superconductivity, as previously observed in LiPd2Ge. We show, based on density functional theory calculations and using the molecular orbital theory approach, that while LiPd2Si and LiPd2Ge share the Pd cubic cage motif that is found in most of the reported Heusler superconductors, they show distinctive features in the electronic structure. This is due to the fact that Li occupies the site which, in other compounds, is filled with an early transition metal or a rare-earth metal. Thus, while a simple valence electron count-property relationship is useful in predicting and tuning Heusler materials, inclusion of the symmetry of interacting frontier orbitals is also necessary for the best understanding.

Electrodeposited Heusler Alloys-Based Nanowires for Shape Memory and Magnetocaloric Applications

In this article, the downsizing of functional Heusler alloys is discussed, focusing on the published results dealing with Heusler alloy nanowires. The theoretical information inspired the fabrication of novel nanowires that are presented in the results section of the article. Three novel nanowires were fabricated with the compositions of Ni66Fe21Ga13, Ni58Fe28In14, and Ni50Fe31Sn19. The Ni66Fe21Ga13 nanowires were fabricated, aiming to improve the stoichiometry of previous functional Ni-Fe-Ga Heusler nanomaterials with a functional behavior above room temperature. They exhibit a phase transition at the temperature of ≈375 K, which results in a magnetocaloric response of |ΔSM| ≈ 0.12 J·kg-1·K-1 at the magnetic field change of only μ0ΔH = 1 T. Novel Heusler alloy Ni58Fe28In14 nanowires, as well as Ni50Fe31Sn19 nanowires, are analyzed for the first time, and their magnetic properties are discussed, introducing a simple electrochemical approach for the fabrication of nanodimensional alloys from mutually immiscible metals.

Band inversion and switchable magnetic properties of two-dimensional RuClF/WSe2 van der Waals heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructures have potential applications in new low-dimensional spintronic devices owing to their unique electronic properties and magnetic anisotropy energies (MAEs). The electronic structures and magnetic properties of RuClF/WSe2 heterostructure are calculated using first-principles calculations. The most stable RuClF/WSe2 heterostructure is selected for property analysis. RuClF/WSe2 heterostructure has half-metallicity. Considering spin-orbit coupling (SOC), band inversion is present in the RuClF/WSe2 heterostructure, which is also demonstrated by the weight of the energy contributions. The local density of states (LDOS) of the edge states can provide strong evidence that the RuClF/WSe2 heterostructure has topological properties. The MAE of RuClF/WSe2 heterostructure is in-plane magnetic anisotropy (IMA), which mainly originates from the contribution of matrix element difference in Ru (dxy, dx2-y2) orbitals. The electronic properties and MAE of RuClF/WSe2 heterostructure can be regulated by biaxial strains and electric fields. The band inversion phenomenon is enhanced at electric fields in the opposite direction, which is also modified at different biaxial strains. However, the band inversion phenomenon disappears at the biaxial strains of 6% and an electric field of 0.5 V Å-1. The MAE of RuClF/WSe2 heterostructure is transformed from IMA into perpendicular magnetic anisotropy (PMA) at certain compressive strains and positively directed electric fields. The above results indicate that the RuClF/WSe2 heterostructure has potential applications in spintronic devices.

Effects of isotropic strain on the structure and transport properties of half-Heusler alloy BiBaK: a first-principles investigation

In this study, using density functional and Boltzmann transport theories, we systematically investigated the effects of tensile and compressive strains on the elastic properties, phonon dispersion relation, electronic structure, and transport properties of the half-Heusler compound BiBaK. We calculated the elastic constants and phonon dispersion curves for BiBaK, which demonstrated its mechanical and thermodynamic stability, respectively, under different isotropic strains. Further, calculations showed that the electronic structure and energy bandgap of BiBaK changed with the application of isotropic strain. A high power factor and low thermal conductivity are key to improving the performance of thermoelectric materials. The figure of merit of BiBaK is 0.6 when it is unstrained and reaches a maximum value of 0.93 at -9% compressive strain and a temperature of 1200 K, indicating that under isotropic compressive strain, BiBaK compounds are efficient thermoelectric materials for high-temperature applications.

High Spin Magnetic Moments in All-3d-Metallic Co-Based Full Heusler Compounds

We conduct ab-initio electronic structure calculations to explore a novel category of magnetic Heusler compounds, comprising solely 3d transition metal atoms and characterized by high spin magnetic moments. Specifically, we focus on Co2YZ Heusler compounds, where Y and Z represent transition metal atoms such that the order of the valence is Co > Y > Z. We show that these compounds exhibit a distinctive region of very low density of minority-spin states at the Fermi level when crystallizing in the L21 lattice structure. The existence of this pseudogap leads most of the studied compounds to a Slater-Pauling-type behavior of their total spin magnetic moment. Co2FeMn is the compound that presents the largest total spin magnetic moment in the unit cell reaching a very large value of 9 μB. Our findings suggest that these compounds are exceptionally promising materials for applications in the realms of spintronics and magnetoelectronics.

Optically controlling the competition between spin flips and intersite spin transfer in a Heusler half-metal on sub-100-fs time scales

The direct manipulation of spins via light may provide a path toward ultrafast energy-efficient devices. However, distinguishing the microscopic processes that can occur during ultrafast laser excitation in magnetic alloys is challenging. Here, we study the Heusler compound Co2MnGa, a material that exhibits very strong light-induced spin transfers across the entire M-edge. By combining the element specificity of extreme ultraviolet high-harmonic probes with time-dependent density functional theory, we disentangle the competition between three ultrafast light-induced processes that occur in Co2MnGa: same-site Co-Co spin transfer, intersite Co-Mn spin transfer, and ultrafast spin flips mediated by spin-orbit coupling. By measuring the dynamic magnetic asymmetry across the entire M-edges of the two magnetic sublattices involved, we uncover the relative dominance of these processes at different probe energy regions and times during the laser pulse. Our combined approach enables a comprehensive microscopic interpretation of laser-induced magnetization dynamics on time scales shorter than 100 femtoseconds.

First-principles investigation of the electronics, optical, mechanical, thermodynamics and thermoelectric properties of Na based Quaternary Heusler alloys (QHAs) NaHfXGe (X = Co, Rh, Ir)

In this study, we explored the electronic and thermoelectric (TE) properties of the Na-based Quaternary Heusler Alloys (QHAs) NaHfXGe (X = Co, Rh, Ir) using density functional theory (DFT). We performed the spin-polarized DFT calculations at the general gradient approximation (GGA) level and confirmed the ground state non-magnetic configuration of NaHfXGe. The mechanical and thermodynamical stabilities are analyzed and discussed to validate the stability by calculating the elastic constant and phonon dispersion curve. A thorough investigation on the electronic properties are carried out by performing the GGA, GGA+U, and GGA+SOC formalism where we report the semi-conducting characteristic of NaHfCoGe and NaHfRhGe QHAs. However, NaHfIrGe is predicted to be a non-magnetic metal. From the calculated optical properties we found that the most active optical absorption occurs within the vis-UV region withα>105 cm-1, therefore the studied QHAs are proposed to be a promising optoelectronic materials. The results of the thermodynamic properties have shown that NaHfXGe follows Debye's low-temperature specific heat law and the classical thermodynamics of the Dulong-Petit law at high temperatures. The calculated TE efficiency using GGA+SOC formalism atT= 1200 K are ZT∼1.22 and 0.57 for NaHfCoGe and NaHfRhGe, suggesting that these materials are potential TE materials to operate at high temperature.

Intrinsically dominated anomalous Hall effect in pulsed laser deposited epitaxial Co2MnGe ferromagnetic full Heusler alloy thin films

Large size epitaxial thin films of ferromagnetic Co2MnGe full Heusler alloy are grown over MgO(100) substrate by using pulsed laser deposition technique under optimized growth conditions. Metallic behavior is confirmed from the longitudinal resistivity-temperature data, while a minimum in the resistivity at ∼25 K is attributed to the disorder-induced weak localization effect. Importantly, a dominating intrinsic anomalous Hall conductivity value of ∼21 S cm-1 against an overall anomalous Hall conductivity value of ∼36 S cm-1 at the room temperature has been estimated for the epitaxial Co2MnGe film. The dominating intrinsic mechanism is also evident from the near temperature-independent behavior of the overall anomalous Hall conductivity.

Tailoring the intrinsic magneto-electronic, mechanical, thermo-physical and thermoelectric response of cobalt-based Heusler alloys: an ab initio insight

We conducted a comprehensive analysis of the fundamental properties of CoHfSi and CoHfGe half-Heusler alloys using density functional theory simulations implemented in Wien2k. To begin, structural optimization revealed that both alloys effectively adopt a cubic C1b structure, with Y1 as the dominant ferromagnetic phase. Electronic properties were computed using various approximation schemes, including the Generalized Gradient Approximation and the modified Becke-Johnson potential. The examination of electronic band structures and their accompanying density of states using the modified Becke-Johnson functional approach unveiled their half-metallic nature. In this context, the spin-up channel exhibited semiconductor behaviour, while the spin-down channel displayed metallic characteristics. Additionally, the spin-splitting observed in their resulting band structures contributed to a net magnetism within their lattice structure, making them promising candidates for spintronic applications. We also scrutinized Seebeck coefficients, electrical conductivity, thermal conductivity, and power factor to gain a better understanding of their thermoelectric properties.

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.

Toughening of Ni-Mn-Based Polycrystalline Ferromagnetic Shape Memory Alloys

Solid-state refrigeration technology is expected to replace conventional gas compression refrigeration technology because it is environmentally friendly and highly efficient. Among various solid-state magnetocaloric materials, Ni-Mn-based ferromagnetic shape memory alloys (SMAs) have attracted widespread attention due to their multifunctional properties, such as their magnetocaloric effect, elastocaloric effect, barocaloric effect, magnetoresistance, magnetic field-induced strain, etc. Recently, a series of in-depth studies on the thermal effects of Ni-Mn-based magnetic SMAs have been carried out, and numerous research results have been obtained. It has been found that poor toughness and cyclic stability greatly limit the practical application of magnetic SMAs in solid-state refrigeration. In this review, the influences of element doping, microstructure design, and the size effect on the strength and toughness of Ni-Mn-based ferromagnetic SMAs and their underlying mechanisms are systematically summarized. The pros and cons of different methods in enhancing the toughness of Ni-Mn-based SMAs are compared, and the unresolved issues are analyzed. The main research directions of Ni-Mn-based ferromagnetic SMAs are proposed and discussed, which are of scientific and technological significance and could promote the application of Ni-Mn-based ferromagnetic SMAs in various fields.

Enhanced Thermoelectric Properties of Nb-Doped Ti(FeCoNi)Sb Pseudo-Ternary Half-Heusler Alloys Prepared Using the Microwave Method

Pseudo-ternary half-Heusler thermoelectric materials, which are formed by filling the B sites of traditional ternary half-Heusler thermoelectric materials of ABX with equal atomic proportions of various elements, have attracted more and more attention due to their lower intrinsic lattice thermal conductivity. High-purity and relatively dense Ti1-xNbx(FeCoNi)Sb (x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1) alloys were prepared via microwave synthesis combined with rapid hot-pressing sintering, and their thermoelectric properties are investigated in this work. The Seebeck coefficient was markedly increased via Nb substitution at Ti sites, which resulted in the optimized power factor of 1.45 μWcm-1K-2 for n-type Ti0.93Nb0.07(FeCoNi)Sb at 750 K. In addition, the lattice thermal conductivity was largely decreased due to the increase in phonon scattering caused by point defects, mass fluctuation and strain fluctuation introduced by Nb-doping. At 750 K, the lattice thermal conductivity of Ti0.97Nb0.03(FeCoNi)Sb is 2.37 Wm-1K-1, which is 55% and 23% lower than that of TiCoSb and Ti(FeCoNi)Sb, respectively. Compared with TiCoSb, the ZT of the Ti1-xNbx(FeCoNi)Sb samples were significantly increased. The average ZT values of the Nb-doped pseudo-ternary half-Heusler samples were dozens of times that of the TiCoSb prepared using the same process.

Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi

Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors. Although phononic and electronic transport underpin the physical origin of thermoelectrics, vacancy has only played a stereotyped role as a scattering center. Here we reveal the multifunctionality of vacancy in tailoring the transport properties of an emerging thermoelectric material, defective n-type ZrNiBi. The phonon kinetic process is mediated in both propagating velocity and relaxation time: vacancy-induced local soft bonds lower the phonon velocity while acoustic-optical phonon coupling, anisotropic vibrations, and point-defect scattering induced by vacancy shorten the relaxation time. Consequently, defective ZrNiBi exhibits the lowest lattice thermal conductivity among the half-Heusler family. In addition, a vacancy-induced flat band features prominently in its electronic band structure, which is not only desirable for electron-sufficient thermoelectric materials but also interesting for driving other novel physical phenomena. Finally, better thermoelectric performance is established in a ZrNiBi-based compound. Our findings not only demonstrate a promising thermoelectric material but also promote the fascinating vacancy-mediated anomalous transport properties for multidisciplinary explorations.

Opening the Bandgap of Metallic Half-Heuslers via the Introduction of d-d Orbital Interactions

Half-Heusler compounds with semiconducting behavior have been developed as high-performance thermoelectric materials for power generation. Many half-Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half-Heusler MgNiSb as an example, a bandgap opening strategy is proposed by introducing the d-d orbital interactions, which enables the opening of the bandgap and the improvement of the thermoelectric performance. The width of the bandgap can be engineered by tuning the strength of the d-d orbital interactions. The conduction type and the carrier density can also be modulated in the Mg1- x Tix NiSb system. Both improved n-type and p-type thermoelectric properties are realized, which are much higher than that of the metallic MgNiSb. The proposed bandgap opening strategy can be employed to design and develop new half-Heusler semiconductors for functional and energy applications.

An ab-initio study of P-type ZrCoY (Y[bond, double bond]Sb and Bi) half - Heusler semiconductors

In this study, the structural, electronic, mechanical, optical, and thermoelectric properties of the cubic half-Heusler compound ZrCoY(Y[bond, double bond]Sb and Bi) obtained using first-principles calculations are presented. The following exchange-correlation functionals have been employed: Generalized Gradient Approximation with Perdew-Burke-Ernzerhoff (GGA-PBE), Generalized Gradient Approximation with Perdew-Burke-Enzerhoff for solids (GGA-PBESol) and Local Density Approximation (LDA). Both ZrCoSb and ZrCoBi compounds are mechanically and dynamically stable, based on the elastic and phonon properties analysis. The calculated electronic band gaps for both compounds are about 1 eV, as predicted by all the three functionals. Since it is noted that GGA-PBE functional is most favourable for predicting structural properties and the energetic stability of ZrCoSb and ZrCoBi compounds, it is further used to calculate their thermoelectric properties. Within the energy range of 0-40 eV, the refractive index, dielectric constant, and energy loss function of ZrCoSb and ZrCoBi compounds are calculated. The possibility of electronic transition from the valence band maximum (VBM) to the conduction minimum band (CBM) is confirmed by the occurrence of absorption peaks in the visible range. For the evaluation of thermoelectric properties, the p-type and n-type doping attained Seebeck coefficients of 1800 and -1800 μVK-1 at 300 K, respectively. The maximum peak of 17 × 1011 W/m s K2 is attained in n-type doping, according to the power factor results.

Formation of precipitates in off-stoichiometric Ni-Mn-Sn Heusler alloys probed through the induced Sn-moment

The shell-ferromagnetic effect originates from the segregation process in off-stoichiometric Ni-Mn-based Heusler alloys. In this work, we investigate the precipitation process of L2₁-ordered Ni₂MnSn and L1₀-ordered NiMn in off-stoichiometric Ni₅₀Mn₄₅Sn₅ during temper annealing, by X-ray diffraction (XRD) and ¹¹⁹Sn Mössbauer spectroscopy. While XRD probes long-range ordering of the lattice structure, Mössbauer spectroscopy probes nearest-neighbour interactions, reflected in the induced Sn magnetic moment. As shown in this work, the induced magnetic Sn moment can be used as a detector for microscopic structural changes and is, therefore, a powerful tool for investigating the formation of nano-precipitates. Similar research can be performed in the future, for example, on different pinning type magnets like Sm-Co or Nd-Fe-B.

Evidence of multi-band superconductivity in non-centrosymmetric full Heusler alloy LuPd2Sn

In this work, evidence of multi-band superconductivity and presence of mixed parity states in full Heusler alloy LuPd₂Sn is investigated using the x-ray diffraction, temperature and field dependent resistivity, temperature dependent magnetization, and heat capacity measurements. Our studies reveal that LuPd₂Sn is a type II superconductor and undergoes superconducting transition below 2.5 K. Above 2.5 K, the temperature and field dependence of resistivity indicate to the presence of multiple bands and inter-band phonon assisted scattering. The upper critical field,H_C2(T) exhibits linear behaviour and deviates from Werthamer, Helfand and Hohenberg model over the measured temperature range. Additionally, the Kadowaki-Woods ratio plot supports the unconventional superconductivity in this alloy. Moreover, a significant deviation from the s-wave behaviour is noted, which is studied using phases fluctuation analysis. It indicates the presence of spin triplet along with spin singlet component arising due to antisymmetric spin orbit coupling.

Exploring structural, mechanical, and thermoelectric properties of half-Heusler compounds RhBiX (X = Ti, Zr, Hf): A first-principles investigation

In this study, the full potential linearization enhanced plane wave method in density functional theory is used. Additionally, the structure, mechanical, and thermoelectric properties of half-Heusler compounds RhBiX (X = Ti, Zr, Hf) are investigated for the first time. The indirect semiconductors RhBiTi and RhBiZr have 0.89 and 1.06 eV bandgap energies, respectively. In contrast, RhBiHf is a direct bandgap semiconductor with a bandgap energy of 0.33 eV. The thermoelectric parameters such as Seebeck coefficient, power factor, electronic conductivity, lattice thermal conductivity, electronic thermal conductivity, and figure of merit ZT, are studied with the semi-classical Boltzmann transport theory. When T = 300 K, RhBiTi, RhBiZr, and RhBiHf show small lattice thermal conductivities, i.e., 10.60, 10.15, and 7.71 W mK-1, respectively, which are consistent with related other studies. The maximum ZT values of RhBiTi, RhBiZr, and RhBiXHf are 0.91, 0.94, and 0.79 at 900 K, respectively. Furthermore, we observed that RhBiX (X = Ti, Zr, Hf) alloy is a thermoelectric material with great potential.

High-ZT Due to the Influence of Copper in Ti(Ni1-xCux)Sn

Most high-performance thermoelectric materials require either expensive, rare, or toxic elements. By doping TiNiSn, a low-cost, abundant thermoelectric compound, with copper as an n-type donor, some optimization can be performed for such materials. Ti(Ni_1-xCu_x)Sn was synthesized by arc melting followed by heat treatment and hot pressing. The resulting material was analyzed for its phases using XRD and SEM and its transport properties. Cu undoped and 0.05/0.1% doped samples showed no additional phases in addition to the matrix half-Heusler phase, while the 1% copper doping initiated some Ti₆Sn₅ and Ti₅Sn₃ precipitation. The transport properties showed that copper acts as an n-type donor while also lowing the lattice thermal conductivity of the materials. the sample containing 0.1% copper showed the best figure of merit, ZT, with a maximal value of 0.75 and an average value of 0.5 through 325-750 K showing a 125% improvement over the undoped sample of TiNiSn.

A Critical Review of Machine Learning Techniques on Thermoelectric Materials

Thermoelectric (TE) materials can directly convert heat to electricity and vice versa and have broad application potential for solid-state power generation and refrigeration. Over the past few decades, efforts have been made to develop new TE materials with high performance. However, traditional experiments and simulations are expensive and time-consuming, limiting the development of new materials. Machine learning (ML) has been increasingly applied to study TE materials in recent years. This paper reviews the recent progress in ML-based TE material research. The application of ML in predicting and optimizing the properties of TE materials, including electrical and thermal transport properties and optimization of functional materials with targeted TE properties, is reviewed. Finally, future research directions are discussed.

Tunable surface magnetism by gate voltage in a slab of nonmagnetic half-Heusler compound CoTiSb

The electrical manipulation of magnetization is appealing to the relevant experiment and spintronic device. In this paper, we focus on the electrical and magnetic properties of a thin film cleaved from the nonmagnetic half-Heusler compound CoTiSb. By means of the first-principles calculations, we find that the surface of TiSb termination possesses ferrimagnetism with a magnetic moment of 0.35 (0.49) μ_B per unit cell without (with) Hubbard U, which can persist below the Curie temperature of 48 (54) K. What is more, such a surface magnetism can be tuned to nonmagnetism by gate-induced hole doping with a concentration of 2.83 × 10¹⁴ (3.55 × 10¹⁴) cm^-2. This magnetic tunability of the CoTiSb slab provides a platform to realize the pseudo-spin valve with both the magnetic electrodes and nonmagnetic space layer made of the same material without hetero-interfaces.

Alloying effect on the lattice thermal conductivity of MNiSn half-Heusler alloys

The lattice thermal conductivity of MNiSn (M = Ti, Zr, Hf) half-Heusler (HH) alloys was studied.

2.11 - Accurate characterization of indoor photovoltaic performance

Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.

Nowotny-Juza phase KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds: applicability in photovoltaics and thermoelectric generators

In the present research, we have considered KBeX (X = N, P, As, Sb, and Bi) half-Heusler compounds to study their inherent properties and have used FP-LAPW + lo scheme with density functional theory based WIEN2k package. The structural and band structural parameters have been explained, and various optical, thermoelectric, and thermodynamic parameters of half-Heuslers have also been analyzed in detail. The trend followed by the lattice constant of these materials approves the reliability of this investigation. The band structures show all the materials are direct band gap semiconductors except KBeN. Here, we have noticed that absorption is highest, and optical conductivity is also highest, confirming the theoretical concept and thus the accuracy of the projected outcomes. All materials (except KBeBi) show a figure of merit near unity in both p- and n-regions, and a small decay is observed with increasing temperature, which affirms their potential as thermoelectric candidates in both p- and n-regions at room temperature. Since conventional resources are limited in nature and their vanishing rate is more than their reproduction rate, hence to fulfil the high energy demand, it has become necessary to search for renewable energy resources. Herein, the values of optical and thermoelectric parameters confirm the photovoltaic and thermoelectric applications of these materials.

Disordered spin gapless semiconducting CoFeCrGa Heusler alloy thin films on Si (100): experiment and theory

Spin gapless semiconductors (SGSs) are an intriguing class of quantum materials that bridge the gap between half-metallic ferromagnets and semiconductors. The presence of a semiconducting bandgap for one spin channel and zero band gap for other spin channels, together with the possibility of four different band structure configurations, makes them one of the most desirable candidates to be used in tunable spin transport based spintronics devices. Here, we have performed various structural, magnetic and transport measurements on an optimized CoFeCrGa (CFCG) Heusler alloy thin film (∼50 nm) grown over a Si(100) substrate using an industry-viable magnetron sputtering technique. The grown film showed B2-ordering under the given set of X-ray diffraction measurement conditions with a saturation magnetization (M_s) of 1.86μ_B per f.u. (at 5 K) and a Curie temperature of ∼595 K. Nearly linearly varying longitudinal resistivity with a negative temperature coefficient was observed. A fitted longitudinal conductivity curve through a "two-carrier model" shows a slight band overlap in the gapless channel for one spin channel and a small energy gap (ΔE) of 167 meV for other spin channels. A negative and linear out-of-plane magnetoresistance response was observed in these films. The temperature dependent anomalous Hall effect measurement gives nearly temperature independent carrier concentration (and/or) mobility with an anomalous Hall conductivity of 91.35 S cm^-1 at 5 K. The first principles calculations have also been performed for bulk and (220) CFCG surfaces to correlate the various structural, electronics and magnetic properties of the optimized CFCG Heusler alloy thin film. The DFT derived results, viz. lattice parameter and M_S exhibit a good match with the experimentally observed results. All these properties collectively imply that the grown film possesses disordered-SGS like behaviour. It is remarkable to note that CFCG films with the (022) surface possess a very high electronic spin polarization of 91%. The results of the study suggest that CFCG is a potential candidate to be used in spintronics-based devices such as spin-injectors.

Anomalous Hall effect in topological Weyl and nodal-line semimetal Heusler compound Co2VAl

Magnetic topological semimetals (TSMs) with broken time-reversal symmetry are very rare and have drawn significant attention in condensed matter physics due to their numerous intriguing topological properties. Among these various magnetic TSMs, Co₂-based full Heusler compounds are of current interest, since a few of these materials exhibit Weyl and nodal fermions in their topological band structure. In this work, we report a comprehensive study of anomalous Hall effect (AHE) in the ferromagnetic full Heusler compound Co₂VAl. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of the occupied electronic Bloch states. The present study of Co₂VAl attempts to understand and explore the possibility of topology-induced AHE. The anomalous Hall resistivityρxyAis observed to scale quadratically with the longitudinal resistivityρ_xx. Our experimental results also reveal that the anomalous Hall conductivity (AHC) is ∼85 cm^-1at 2 K with an intrinsic contribution of ∼75.6 S cm^-1, and is nearly insensitive to temperature. The first principle calculations note that the Berry curvature originated from a gapped nodal line and symmetry-protected Weyl nodes near the Fermi level (EF) is the main source of AHE in this compound. Thus, this investigation on Co₂VAl discloses that it is a ferromagnetic Weyl and nodal-line TSM. The theoretically calculated AHC is in well agreement with the experimentally obtained AHC.

Comprehensive Insight into p-Type Bi2Te3-Based Thermoelectrics near Room Temperature

Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.

Processing Effects on the Martensitic Transformation and Related Properties in the Ni55Fe18Nd2Ga25 Ferromagnetic Shape Memory Alloy

The influence of processing on the martensitic transformation and related magnetic properties of the Ni55Fe18Nd2Ga25 ferromagnetic shape memory alloy, as bulk and ribbons prepared by the melt spinning method and subjected to different thermal treatments, is investigated. Structural, calorimetric, and magnetic characterizations are performed. Thermal treatment at 1173 K induces a decrease in both the Curie and the martensitic transformation temperatures, while a treatment at 673 K produces the structural ordering of the ribbons, hence an increase in TC. A maximum value of the magnetic entropy variation of -5.41 J/kgK was recorded at 310 K for the as quenched ribbons. The evaluation of the magnetoresistive effect shows a remarkable value of -13.5% at 275 K on the bulk sample, which is much higher than in the ribbons.

Electronic Configurations of 3d Transition-Metal Compounds Using Local Structure and Neural Networks

Machine learning (ML) methods extract statistical relationships between inputs and results. When the inputs are solid-state crystal structures, structure-property relationships can be obtained. In this work, we investigate whether a simple neural network is able to learn the 3d orbital occupations for the transition-metal (TM) centers in crystalline inorganic solid-state compounds using only the local structure around the transition-metal centers described by rotationally invariant fingerprints based on spherical harmonics and one-hot elemental encoding. A multilayer neural network trained on density functional theory (DFT) results of about 1800 samples was developed and showed good performance in predicting the TM orbital occupations (for both spin channels). We study in detail how the local structure affects the predictions of the local properties and how they provide physical insights for the design of a future machine learning model for materials chemistry. The proposed ML method is illustrated in practical application by predicting local magnetic moments of the transition-metal atoms in a full set of inorganic structures with large unit cells. Although less accurate compared to the experimental data, the ML results compared well with the DFT results, suggesting the feasibility of electronic property prediction based only on structure input.

Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals

Band structure engineering has a strong beneficial impact on thermoelectric performance, where theoretical methods dominate the investigation of electronic structures. Here, we use angle-resolved photoemission spectroscopy (ARPES) to analyze the electronic structure and report on the thermoelectric transport properties of half-Heusler TiCoSb high-quality single crystals. High degeneracy of the valence bands at the L and Γ band maximum points was observed, which provides a band-convergence scenario for the thermoelectric performance of TiCoSb. Previous efforts have shown how crystallographic defects play an important role in TiCoSb transport properties, while the intrinsic properties remain elusive. Using hard X-ray photoelectron spectroscopy (HAXPES), we discard the presence of interstitial defects that could induce in-gap states near the valence band in our crystals. Contrary to polycrystalline reports, intrinsic TiCoSb exhibits p-type transport, albeit defects still affect the carrier concentration. In two initially identical p-type TiCoSb crystal batches, distinct metallic and semiconductive behaviors were found owing to defects not noticeable by elemental analysis. A varying Seebeck effective mass is consistent with the change at the Fermi level within this band convergence picture. This report tackles the direct investigation of the electronic structure of TiCoSb and reveals new insights and the strong impact of point defects on the optimization of thermoelectric properties.

Cubic Stuffed-Diamond Semiconductors LiCu3TiQ4 (Q = S, Se, and Te)

Lithium chalcogenides have been understudied, owing to the difficulty in managing the chemical reactivity of lithium. These materials are of interest as potential ion conductors and thermal neutron detectors. In this study, we describe three new cubic lithium copper chalcotitanates that crystallize in the P4̅3m space group. LiCu₃TiS₄, a = 5.5064(6) Å, and LiCu₃TiSe₄, a = 5.7122(7) Å, represent two members of a new stuffed diamond-type crystal structure, while LiCu₃TiTe₄, a = 5.9830(7) Å crystallized into a similar structure exhibiting lithium and copper mixed occupancy. These structures can be understood as hybrids of the zinc-blende and sulvanite structure types. In situ powder X-ray diffraction was utilized to construct a "panoramic" reaction map for the preparation of LiCu₃TiTe₄, facilitating the design of a rational synthesis and uncovering three new transient phases. LiCu₃TiS₄ and LiCu₃TiSe₄ are thermally stable up to 1000 °C under vacuum, while LiCu₃TiTe₄ partially decomposes when slowly cooled to 400 °C. Density functional theory calculations suggest that these compounds are indirect band gap semiconductors. The measured work functions are 4.77(5), 4.56(5), and 4.69(5) eV, and the measured band gaps are 2.23(5), 1.86(5), and 1.34(5) eV for the S, Se, and Te analogues, respectively.