1
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Picker J, Gan Z, Neumann C, George A, Turchanin A. Low defect density in MoS 2 monolayers grown on Au(111) by metal-organic chemical vapor deposition. Micron 2024; 186:103708. [PMID: 39208700 DOI: 10.1016/j.micron.2024.103708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2024] [Revised: 08/15/2024] [Accepted: 08/23/2024] [Indexed: 09/04/2024]
Abstract
Monolayers of transition metal dichalcogenides (TMDs) possess high potential for applications in novel electronic and optoelectronic devices and therefore the development of methods for their scalable growth is of high importance. Among different suggested approaches, metal-organic chemical vapor deposition (MOCVD) is the most promising one for technological applications because of its lower growth temperature compared to the most other methods, e.g., conventional chemical vapor or atomic layer deposition (CVD, ALD). Here we demonstrate for the first time the epitaxial growth of MoS2 monolayers on Au(111) by MOCVD at 450 °C. We confirm the high quality of the grown TMD monolayers down to the atomic scale using several complementary methods. These include Raman spectroscopy, non-contact atomic force microscopy (nc-AFM), X-ray photoelectron spectroscopy and scanning tunneling microscopy (STM). The topographic corrugation of the MoS2 monolayer on Au(111), revealed in a moiré structure, was measured as ≈20 pm by nc-AFM. The estimated defect density calculated from STM images of the as-grown MoS2 monolayers is in the order of 1012 vacancies/cm2. The defects are mainly caused by single sulfur vacancies. Our approach is a step forward towards the technologically relevant growth of high-quality, large-area TMD monolayers.
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Affiliation(s)
- Julian Picker
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, Jena 07743, Germany
| | - Ziyang Gan
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, Jena 07743, Germany
| | - Christof Neumann
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, Jena 07743, Germany
| | - Antony George
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, Jena 07743, Germany
| | - Andrey Turchanin
- Institute of Physical Chemistry, Friedrich Schiller University Jena, Lessingstraße 10, Jena 07743, Germany; Center for Energy and Environmental Chemistry Jena (CEEC Jena), Philosophenweg 7a, Jena 07743, Germany; Abbe Center of Photonics (ACP), Albert-Einstein-Straße 6, Jena 07745, Germany.
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2
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Li J, Yang X, Zhang Z, Yang W, Duan X, Duan X. Towards the scalable synthesis of two-dimensional heterostructures and superlattices beyond exfoliation and restacking. NATURE MATERIALS 2024; 23:1326-1338. [PMID: 39227467 DOI: 10.1038/s41563-024-01989-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 08/02/2024] [Indexed: 09/05/2024]
Abstract
Two-dimensional transition metal dichalcogenides, which feature atomically thin geometry and dangling-bond-free surfaces, have attracted intense interest for diverse technology applications, including ultra-miniaturized transistors towards the subnanometre scale. A straightforward exfoliation-and-restacking approach has been widely used for nearly arbitrary assembly of diverse two-dimensional (2D) heterostructures, superlattices and moiré superlattices, providing a versatile materials platform for fundamental investigations of exotic physical phenomena and proof-of-concept device demonstrations. While this approach has contributed importantly to the recent flourishing of 2D materials research, it is clearly unsuitable for practical technologies. Capturing the full potential of 2D transition metal dichalcogenides requires robust and scalable synthesis of these atomically thin materials and their heterostructures with designable spatial modulation of chemical compositions and electronic structures. The extreme aspect ratio, lack of intrinsic substrate and highly delicate nature of the atomically thin crystals present fundamental difficulties in material synthesis. Here we summarize the key challenges, highlight current advances and outline opportunities in the scalable synthesis of transition metal dichalcogenide-based heterostructures, superlattices and moiré superlattices.
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Affiliation(s)
- Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Zhengwei Zhang
- School of Physics and Electronics, Central South University, Changsha, China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
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3
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Zhang Z, Hoang L, Hocking M, Peng Z, Hu J, Zaborski G, Reddy PD, Dollard J, Goldhaber-Gordon D, Heinz TF, Pop E, Mannix AJ. Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition. ACS NANO 2024; 18:25414-25424. [PMID: 39230253 PMCID: PMC11412230 DOI: 10.1021/acsnano.4c02164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Lauren Hoang
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Gregory Zaborski
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Pooja D Reddy
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - Johnny Dollard
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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4
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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5
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Liang M, Yan H, Wazir N, Zhou C, Ma Z. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1408. [PMID: 39269071 PMCID: PMC11397490 DOI: 10.3390/nano14171408] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Revised: 08/23/2024] [Accepted: 08/26/2024] [Indexed: 09/15/2024]
Abstract
As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.
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Affiliation(s)
- Meng Liang
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Han Yan
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Nasrullah Wazir
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Changjian Zhou
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Zichao Ma
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
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6
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Yang E, Hong S, Ma J, Park SJ, Lee DK, Das T, Ha TJ, Kwak JY, Chang J. Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS 2 Transistor Operating in Subthreshold Regime. ACS NANO 2024; 18:22965-22977. [PMID: 39146081 DOI: 10.1021/acsnano.4c04316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS2 field-effect transistors (FETs). Our large-area CVD-grown monolayer WS2 FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlOx/Al2O3 and a double-gate structure employing high-k dielectric HfO2. Due to the superior subthreshold characteristics, monolayer WS2 FETs show high transconductance and high output resistance in the subthreshold regime, resulting in significantly higher intrinsic gain compared to conventional Si MOSFETs. Therefore, we successfully realize subthreshold operating monolayer WS2 nMOS inverters with extremely high gains of 564 and 2056 at supply voltage (VDD) of 1 and 2 V, respectively, and low power consumption of ∼2.3 pW·μm-1 at VDD = 1 V. In addition, the monolayer WS2 nMOS inverter is further expanded to the demonstration of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. These findings suggest the potential of monolayer WS2 for high-gain and low-power logic circuits and validate the practical application in large areas.
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Affiliation(s)
- Eunyeong Yang
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Sekwon Hong
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Jiwon Ma
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Sang-Joon Park
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea
| | - Dae Kyu Lee
- Korea Institute of Science and Technology, KIST, Seoul 02792, South Korea
| | - Tanmoy Das
- Faculty of Engineering, Lincoln University College, Petaling Jaya, Selangor 47301, Malaysia
| | - Tae-Jun Ha
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea
| | - Joon Young Kwak
- Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, South Korea
| | - Jiwon Chang
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, South Korea
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7
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Li C, Zheng F, Min J, Yang N, Chang YM, Liu H, Zhang Y, Yang P, Yu Q, Li Y, Luo Z, Aljarb A, Shih K, Huang JK, Li LJ, Wan Y. Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404923. [PMID: 39149776 DOI: 10.1002/adma.202404923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Revised: 07/01/2024] [Indexed: 08/17/2024]
Abstract
Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer-scale single-crystal films. Both step-edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic-edge guided epitaxy and van der Waals epitaxy. Low-concentration sulfur condition preserves O/Al-terminated step edges, fostering atomic-edge epitaxy, while high-concentration sulfur leads to S-terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic-level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single-crystal 2D materials on a wafer scale.
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Affiliation(s)
- Chenyang Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Fangyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jiacheng Min
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Ni Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yu-Ming Chang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Haomin Liu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yuxiang Zhang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Pengfei Yang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Qinze Yu
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yu Li
- Department of Computer Science and Engineering, The Chinese University of Hong Kong, Hong Kong SAR, 999077, China
- The CUHK Shenzhen Research Institute, Hi-Tech Park, Nanshan, Shenzhen, 518057, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Areej Aljarb
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Department of Physics, King Abdulaziz University, Jeddah, 21589, Kingdom of Saudi Arabia
| | - Kaimin Shih
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Jing-Kai Huang
- Department of Systems Engineering, City University of Hong Kong, Hong Kong, 999077, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
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8
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Kim SJ, Hwang S, Kwon JD, Yoon J, Park JM, Lee Y, Kim Y, Kang CG. Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS 2 Field-Effect Transistors with Buried Local Back-Gate Structure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1324. [PMID: 39195363 DOI: 10.3390/nano14161324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2024] [Revised: 08/03/2024] [Accepted: 08/05/2024] [Indexed: 08/29/2024]
Abstract
The impact of radiation on MoS2-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS2 field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al2O3 gate dielectrics and MoS2/Al2O3 interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al2O3 dielectric interface near the MoS2 side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS2 channel/dielectric interface.
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Affiliation(s)
- Su Jin Kim
- Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup 56212, Republic of Korea
| | - Seungkwon Hwang
- Energy and Environment Materials Research Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Republic of Korea
| | - Jung-Dae Kwon
- Energy and Environment Materials Research Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Republic of Korea
| | - Jongwon Yoon
- Energy and Environment Materials Research Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Republic of Korea
| | - Jeong Min Park
- Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup 56212, Republic of Korea
| | - Yongsu Lee
- Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup 56212, Republic of Korea
| | - Yonghun Kim
- Energy and Environment Materials Research Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Republic of Korea
| | - Chang Goo Kang
- Korea Atomic Energy Research Institute, 29 Geumgu-gil, Jeongeup 56212, Republic of Korea
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9
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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10
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Liu H, Zhang T, Wu P, Lee HW, Liu Z, Tang TW, Tang SY, Kang T, Park JH, Wang J, Zhang K, Zheng X, Peng YR, Chueh YL, Liu Y, Palacios T, Kong J, Luo Z. Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition. NANO LETTERS 2024; 24:8277-8286. [PMID: 38949123 DOI: 10.1021/acs.nanolett.4c01314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing.
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Affiliation(s)
- Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Peng Wu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hae Won Lee
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tsz Wing Tang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Shin-Yi Tang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yu-Ren Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
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11
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Yu H, Huang L, Zhou L, Peng Y, Li X, Yin P, Zhao J, Zhu M, Wang S, Liu J, Du H, Tang J, Zhang S, Zhou Y, Lu N, Liu K, Li N, Zhang G. Eight In. Wafer-Scale Epitaxial Monolayer MoS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402855. [PMID: 38683952 DOI: 10.1002/adma.202402855] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2024] [Revised: 04/24/2024] [Indexed: 05/02/2024]
Abstract
Large-scale, high-quality, and uniform monolayer molybdenum disulfide (MoS2) films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and is demonstrated at a wafer scale up to 4-in. In this study, the epitaxial growth of 8-in. wafer-scale highly oriented monolayer MoS2 on sapphire is reported as with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-in. wafer-scale monolayer MoS2 film are fabricated and exhibit high performances, with an average mobility and an on/off ratio of 53.5 cm2 V-1 s-1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators are also demonstrated, showcasing excellent electrical functions. This work may pave the way of MoS2 in practical industry-scale applications.
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Affiliation(s)
- Hua Yu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Liangfeng Huang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Lanying Zhou
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Peng Yin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100190, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, 100190, China
| | - Jiaojiao Zhao
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shuopei Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jieying Liu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Hongyue Du
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Songge Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yuchao Zhou
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kaihui Liu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100190, China
| | - Na Li
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
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12
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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13
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Jia X, Cheng Z, Song Y, Zhang Y, Ye Y, Li M, Cheng X, Xu W, Li Y, Dai L. Nanoscale Channel Length MoS 2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16544-16552. [PMID: 38513260 DOI: 10.1021/acsami.4c01980] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS2 FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS2 FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated. The channel length of the as-fabricated FET is basically determined by the thickness of an insulating layer between the source and drain electrodes. The vertically distributed source and drain electrodes enable to reduce the electrode-occupied area and increase in the device density. The as-fabricated vertical FETs exhibit on/off ratios comparable to those of mechanically exfoliated MoS2 FETs with a nanoscale channel length under identical VDS. In addition, the as-fabricated FETs can work at a VDS as low as 10 mV with a desirable on/off ratio (1.9 × 107), which benefits in developing low-power devices. Moreover, the fabrication process is free from EBL and can be applied to wafer-scale device arrays. The statistical results show that the fabricated FET arrays have a device yield of 87.5% and an average on/off ratio of about 1.7 × 106 at a VDS of 10 mV, with the lowest and highest ones to be about 1.3 × 104 and 1.9 × 107, respectively, demonstrating the good reliability of our fabrication process. Our work promises a bright future for TMDCs in realizing high-density and low-power nanoelectronic devices in ICs.
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Affiliation(s)
- Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yiwen Song
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yi Zhang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Yu Ye
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
| | - Minglai Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xing Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Wanjin Xu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
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14
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Wang Y, Zhai W, Ren Y, Zhang Q, Yao Y, Li S, Yang Q, Zhou X, Li Z, Chi B, Liang J, He Z, Gu L, Zhang H. Phase-Controlled Growth of 1T'-MoS 2 Nanoribbons on 1H-MoS 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307269. [PMID: 37934742 DOI: 10.1002/adma.202307269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 10/31/2023] [Indexed: 11/09/2023]
Abstract
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.
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Affiliation(s)
- Yongji Wang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qi Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zhen He
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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15
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Xin Z, Zhang X, Guo J, Wu Y, Wang B, Shi R, Liu K. Dual-Limit Growth of Large-Area Monolayer Transition Metal Dichalcogenides. ACS NANO 2024; 18:7391-7401. [PMID: 38408193 DOI: 10.1021/acsnano.3c09222] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
The large-scale growth of monolayer transition metal dichalcogenide (TMDC) films is a determinant for the implementation of two-dimensional materials in industrial applications. However, the simultaneous realization of uniform monolayer thickness and large-area coverage is still a challenge, because it requires precise control of reaction kinetics in both space and time dimensions. Herein, we achieve a variety of large-area monolayer TMDCs films by a dual-limit growth (DLG) that is realized through nanoporous carbon nanotube (CNT) films. In the DLG, a precursor-loaded CNT film placed face-to-face with a substrate provides a space-limited environment facilitating the monolayer growth, while the byproducts formed in the CNT film timely limits the supply of precursors released from nanopores of the CNT film, inhibiting the growth of multilayer TMDCs on the substrate. Consequently, large-area monolayer TMDC films are grown in a wide range of reaction times and show good homogeneity in thickness, optical properties, and device performance over the entire substrate. The DLG strategy is widely applicable for the growth of a variety of TMDC films including WSe2, MoS2, MoSe2, WS2, and ReS2. Our work provides a universal strategy to attain large-area monolayer TMDC films that can be used in practical applications of integrated circuits.
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Affiliation(s)
- Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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16
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Singh J, Astarini NA, Tsai M, Venkatesan M, Kuo C, Yang C, Yen H. Growth of Wafer-Scale Single-Crystal 2D Semiconducting Transition Metal Dichalcogenide Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307839. [PMID: 38164110 PMCID: PMC10953574 DOI: 10.1002/advs.202307839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/28/2023] [Indexed: 01/03/2024]
Abstract
Due to extraordinary electronic and optoelectronic properties, large-scale single-crystal two-dimensional (2D) semiconducting transition metal dichalcogenide (TMD) monolayers have gained significant interest in the development of profit-making cutting-edge nano and atomic-scale devices. To explore the remarkable properties of single-crystal 2D monolayers, many strategies are proposed to achieve ultra-thin functional devices. Despite substantial attempts, the controllable growth of high-quality single-crystal 2D monolayer still needs to be improved. The quality of the 2D monolayer strongly depends on the underlying substrates primarily responsible for the formation of grain boundaries during the growth process. To restrain the grain boundaries, the epitaxial growth process plays a crucial role and becomes ideal if an appropriate single crystal substrate is selected. Therefore, this perspective focuses on the latest advances in the growth of large-scale single-crystal 2D TMD monolayers in the light of enhancing their industrial applicability. In the end, recent progress and challenges of 2D TMD materials for various potential applications are highlighted.
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Affiliation(s)
- Jitendra Singh
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
- Department of PhysicsUdit Narayan Post Graduate College PadraunaKushinagarUttar Pradesh274304India
| | - Nadiya Ayu Astarini
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Meng‐Lin Tsai
- Department of Materials Science and EngineeringNational Taiwan University of Science and TechnologyTaipei City106335Taiwan
| | - Manikandan Venkatesan
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chi‐Ching Kuo
- Department of Molecular Science and EngineeringInstitute of Organic and Polymeric MaterialsNational Taipei University of TechnologyTaipei City106344Taiwan
| | - Chan‐Shan Yang
- Institute and Undergraduate Program of Electro‐Optical EngineeringNational Taiwan Normal UniversityTaipei City11677Taiwan
| | - Hung‐Wei Yen
- Department of Materials Science and EngineeringNational Taiwan UniversityTaipei City106319Taiwan
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17
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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18
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Liu MJ, Lan WJ, Huang CS, Chen CZ, Cyu RH, Sino PAL, Yang YL, Chiu PW, Chuang FC, Shen CH, Chen JH, Chueh YL. High-Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n-MoS 2 and p-WSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2307728. [PMID: 38263806 DOI: 10.1002/smll.202307728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Revised: 11/01/2023] [Indexed: 01/25/2024]
Abstract
Herein, the structure of integrated M3D inverters are successfully demonstrated where a chemical vapor deposition (CVD) synthesized monolayer WSe2 p-type nanosheet FET is vertically integrated on top of CVD synthesized monolayer MoS2 n-type film FET arrays (2.5 × 2.5 cm) by semiconductor industry techniques, such as transfer, e-beam evaporation (EBV), and plasma etching processes. A low temperature (below 250 °C) is employed to protect the WSe2 and MoS2 channel materials from thermal decomposition during the whole fabrication process. The MoS2 NMOS and WSe2 PMOS device fabricated show an on/off current ratio exceeding 106 and the integrated M3D inverters indicate an average voltage gain of ≈9 at VDD = 2 V. In addition, the integrated M3D inverter demonstrates an ultra-low power consumption of 0.112 nW at a VDD of 1 V. Statistical analysis of the fabricated inverters devices shows their high reliability, rendering them suitable for large-area applications. The successful demonstration of M3D inverters based on large-scale 2D monolayer TMDs indicate their high potential for advancing the application of 2D TMDs in future integrated circuits.
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Affiliation(s)
- Ming-Jin Liu
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Wei-Jie Lan
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Cai-Syuan Huang
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chang-Zhi Chen
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ruei-Hong Cyu
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Paul Albert L Sino
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Yu-Lun Yang
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Wen Chiu
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Feng-Chuan Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chang-Hong Shen
- National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, 300091, Taiwan
| | - Jyun-Hong Chen
- National Applied Research Laboratories, Taiwan Semiconductor Research Institute, Hsinchu, 300091, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan
- Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
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19
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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20
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Wu F, Xu Q, Wang Q, Chu Y, Li L, Tang J, Liu J, Tian J, Ji Y, Liu L, Yuan Y, Huang Z, Zhao J, Zan X, Watanabe K, Taniguchi T, Shi D, Gu G, Xu Y, Xian L, Yang W, Du L, Zhang G. Giant Correlated Gap and Possible Room-Temperature Correlated States in Twisted Bilayer MoS_{2}. PHYSICAL REVIEW LETTERS 2023; 131:256201. [PMID: 38181343 DOI: 10.1103/physrevlett.131.256201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2023] [Revised: 08/21/2023] [Accepted: 11/21/2023] [Indexed: 01/07/2024]
Abstract
Moiré superlattices have emerged as an exciting condensed-matter quantum simulator for exploring the exotic physics of strong electronic correlations. Notable progress has been witnessed, but such correlated states are achievable usually at low temperatures. Here, we report evidence of possible room-temperature correlated electronic states and layer-hybridized SU(4) model simulator in AB-stacked MoS_{2} homobilayer moiré superlattices. Correlated insulating states at moiré band filling factors v=1, 2, 3 are unambiguously established in twisted bilayer MoS_{2}. Remarkably, the correlated electronic state at v=1 shows a giant correlated gap of ∼126 meV and may persist up to a record-high critical temperature over 285 K. The realization of a possible room-temperature correlated state with a large correlated gap in twisted bilayer MoS_{2} can be understood as the cooperation effects of the stacking-specific atomic reconstruction and the resonantly enhanced interlayer hybridization, which largely amplify the moiré superlattice effects on electronic correlations. Furthermore, extreme large nonlinear Hall responses up to room temperature are uncovered near correlated electronic states, demonstrating the quantum geometry of moiré flat conduction band.
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Affiliation(s)
- Fanfan Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiaoling Xu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- College of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal University, Chengdu 610068, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lu Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jieying Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Le Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yalong Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaojiao Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaozhou Zan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Gangxu Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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21
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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22
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Hoang AT, Hu L, Kim BJ, Van TTN, Park KD, Jeong Y, Lee K, Ji S, Hong J, Katiyar AK, Shong B, Kim K, Im S, Chung WJ, Ahn JH. Low-temperature growth of MoS 2 on polymer and thin glass substrates for flexible electronics. NATURE NANOTECHNOLOGY 2023; 18:1439-1447. [PMID: 37500777 DOI: 10.1038/s41565-023-01460-w] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Accepted: 06/14/2023] [Indexed: 07/29/2023]
Abstract
Recent advances in two-dimensional semiconductors, particularly molybdenum disulfide (MoS2), have enabled the fabrication of flexible electronic devices with outstanding mechanical flexibility. Previous approaches typically involved the synthesis of MoS2 on a rigid substrate at a high temperature followed by the transfer to a flexible substrate onto which the device is fabricated. A recurring drawback with this methodology is the fact that flexible substrates have a lower melting temperature than the MoS2 growth process, and that the transfer process degrades the electronic properties of MoS2. Here we report a strategy for directly synthesizing high-quality and high-crystallinity MoS2 monolayers on polymers and ultrathin glass substrates (thickness ~30 µm) at ~150 °C using metal-organic chemical vapour deposition. By avoiding the transfer process, the MoS2 quality is preserved. On flexible field-effect transistors, we achieve a mobility of 9.1 cm2 V-1 s-1 and a positive threshold voltage of +5 V, which is essential for reducing device power consumption. Moreover, under bending conditions, our logic circuits exhibit stable operation while phototransistors can detect light over a wide range of wavelengths from 405 nm to 904 nm.
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Affiliation(s)
- Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Tran Thi Ngoc Van
- Department of Chemical Engineering, Hongik University, Seoul, Republic of Korea
| | - Kyeong Dae Park
- Institute for Rare Metals and Division of Advanced Materials Engineering, Kongju National University, Cheonan, Republic of Korea
| | - Yeonsu Jeong
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul, Republic of Korea
| | - Kihyun Lee
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul, Republic of Korea
| | - Kwanpyo Kim
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul, Republic of Korea
| | - Woon Jin Chung
- Institute for Rare Metals and Division of Advanced Materials Engineering, Kongju National University, Cheonan, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
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23
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Chen X, Zhang Y, Yue X, Huang Z, Zhang L, Feng M, Liu F, Gao C, Yan Y, Fu X. Directly seeding epitaxial growth of tungsten oxides/tungsten diselenide mixed-dimensional heterostructures with excellent optical properties. iScience 2023; 26:108296. [PMID: 38026186 PMCID: PMC10654586 DOI: 10.1016/j.isci.2023.108296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 07/25/2023] [Accepted: 10/19/2023] [Indexed: 12/01/2023] Open
Abstract
Mixed-dimensional heterostructures have drawn significant attention due to their intriguing physical properties and potential applications in electronic and optoelectronic nanodevices. However, limited by the lattice matching, the preparation of heterostructures is experimentally difficult and the underlying growth mechanism has not been well established. Here, we report a three-step seeding epitaxial growth strategy for synthesizing mixed-dimensional heterostructures of one-dimensional microwire (MW) and two-dimensional atomic thin film. Our growth strategy has successfully realized direct epitaxial growth of WSe2 film on WOx MW and significantly improves the quality of the epitaxial WSe2 monolayer, which is evidenced by the remarkably enhanced photoluminescence (PL). More intriguingly, the as-synthesized WOx MWs exhibit a strong nonlinear optical response due to the enhancement effect of the core (WOx)-shell (WSe2) nanocavity. Our work provides a feasible route for direct growth of WOx-based mixed-dimensional heterostructures, which possess potential applications in high-performance optoelectronic devices.
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Affiliation(s)
- Xiang Chen
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Yaqing Zhang
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Xinxin Yue
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Zhuanzhuan Huang
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Lifu Zhang
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Min Feng
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Fang Liu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Cuntao Gao
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Yuan Yan
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
| | - Xuewen Fu
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, China
- School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China
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24
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Fu JH, Min J, Chang CK, Tseng CC, Wang Q, Sugisaki H, Li C, Chang YM, Alnami I, Syong WR, Lin C, Fang F, Zhao L, Lo TH, Lai CS, Chiu WS, Jian ZS, Chang WH, Lu YJ, Shih K, Li LJ, Wan Y, Shi Y, Tung V. Oriented lateral growth of two-dimensional materials on c-plane sapphire. NATURE NANOTECHNOLOGY 2023; 18:1289-1294. [PMID: 37474684 DOI: 10.1038/s41565-023-01445-9] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 06/08/2023] [Indexed: 07/22/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c-plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen-aluminium atomic plane establishes an energy-minimized 2D TMD-sapphire configuration. Reconstructing the surfaces of c-plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals-an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.
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Affiliation(s)
- Jui-Han Fu
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
| | - Jiacheng Min
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, China
| | - Che-Kang Chang
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Chien-Chih Tseng
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Qingxiao Wang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Hayato Sugisaki
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan
| | - Chenyang Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Yu-Ming Chang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Ibrahim Alnami
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Wei-Ren Syong
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Ci Lin
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Feier Fang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
| | - Lv Zhao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
| | - Tzu-Hsuan Lo
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Chao-Sung Lai
- Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan
| | - Wei-Sheng Chiu
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Zih-Siang Jian
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Yu-Jung Lu
- Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan
| | - Kaimin Shih
- Department of Civil Engineering, The University of Hong Kong, Hong Kong, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
| | - Yi Wan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
| | - Yumeng Shi
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China.
| | - Vincent Tung
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.
- Center for Green Technology of the Chang Gung University, Taoyuan, Taiwan.
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25
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Lu Y. Production of 12-inch two-dimensional semiconductors: bridging the gap between Lab and Fab. Sci Bull (Beijing) 2023; 68:2289-2290. [PMID: 37709583 DOI: 10.1016/j.scib.2023.08.051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Affiliation(s)
- Yuerui Lu
- School of Engineering, College of Engineering, The Australian National University, Canberra ACT 2601, Australia.
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26
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Ma G, Shen W, Sanchez DS, Yu Y, Wang H, Sun L, Wang X, Hu C. Excitons Enabled Topological Phase Singularity in a Single Atomic Layer. ACS NANO 2023; 17:17751-17760. [PMID: 37695313 DOI: 10.1021/acsnano.3c02478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
The nontrivial and rigorous Heaviside phase jump behavior of phase singularities (PSs) empowers exotic topological modes and widely divergent nature compared to neighboring points, which has attracted great attention in condensed matter physics as well as applications in photonics and ultrasensitive sensors. Here we demonstrate the universal existence of a family of topologically protected PSs generated from exciton resonances of single-atom layers. We obtain the PSs by coating the transition metal dichalcogenide (TMDC) monolayers on a nonabsorptive semi-infinite substrate without surface plasmon effect or other assisted resonators, which exploits the benefits of both exciton-dominated enhancement and peculiarities of the singular phase. We show that a refractive indices matched transparent substrate enables TMDC monolayers to exhibit topologically protected zero reflection accompanied by a perfect Heaviside π-phase jump at strong light adsorptions, which can be utilized to radically reduce the thickness of PS-based devices to a single atomic layer. By using the TMDC monolayer-based PSs for refractive index biosensors, we demonstrate its superior phase sensitivity at a level of 104 degrees per refractive index unit and detection of bioactive bacteria, respectively, which is comparable to the cutting-edge surface plasmon and Fabry-Perot resonance sensors. Our proof-of-concept results offer experimental and theoretical insights into a single atomic playground for flat singular optics and label-free biosensing technologies.
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Affiliation(s)
- Guoteng Ma
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
- Nanchang Institute for Microtechnology of Tianjin University, Tianjin 300072, China
| | - Daniel Soy Sanchez
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Yu Yu
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Han Wang
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
| | - Lidong Sun
- Institut für Experimentalphysik, Johannes Kepler Universität Linz, Altenbergerstraße 69, A-4040 Linz, Austria
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210008, China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
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27
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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Somphonsane R, Chiawchan T, Bootsa-ard W, Ramamoorthy H. CVD Synthesis of MoS 2 Using a Direct MoO 2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4817. [PMID: 37445130 PMCID: PMC10343541 DOI: 10.3390/ma16134817] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 06/29/2023] [Accepted: 07/01/2023] [Indexed: 07/15/2023]
Abstract
In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.
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Affiliation(s)
- Ratchanok Somphonsane
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
- Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400, Thailand
| | - Tinna Chiawchan
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Waraporn Bootsa-ard
- Department of Physics, School of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand; (R.S.); (T.C.); (W.B.-a.)
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
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29
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Xue G, Sui X, Yin P, Zhou Z, Li X, Cheng Y, Guo Q, Zhang S, Wen Y, Zuo Y, Zhao C, Wu M, Gao P, Li Q, He J, Wang E, Zhang G, Liu C, Liu K. Modularized batch production of 12-inch transition metal dichalcogenides by local element supply. Sci Bull (Beijing) 2023:S2095-9273(23)00420-6. [PMID: 37438155 DOI: 10.1016/j.scib.2023.06.037] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Revised: 06/20/2023] [Accepted: 06/28/2023] [Indexed: 07/14/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are regarded as pivotal semiconductor candidates for next-generation devices due to their atomic-scale thickness, high carrier mobility and ultrafast charge transfer. In analog to the traditional semiconductor industry, batch production of wafer-scale TMDs is the prerequisite to proceeding with their integrated circuits evolution. However, the production capacity of TMD wafers is typically constrained to a single and small piece per batch (mainly ranging from 2 to 4 inches), due to the stringent conditions required for effective mass transport of multiple precursors during growth. Here we developed a modularized growth strategy for batch production of wafer-scale TMDs, enabling the fabrication of 2-inch wafers (15 pieces per batch) up to a record-large size 12-inch wafers (3 pieces per batch). Each module, comprising a self-sufficient local precursor supply unit for robust individual TMD wafer growth, is vertically stacked with others to form an integrated array and thus a batch growth. Comprehensive characterization techniques, including optical spectroscopy, electron microscopy, and transport measurements unambiguously illustrate the high-crystallinity and the large-area uniformity of as-prepared monolayer films. Furthermore, these modularized units demonstrate versatility by enabling the conversion of as-produced wafer-scale MoS2 into various structures, such as Janus structures of MoSSe, alloy compounds of MoS2(1-x)Se2x, and in-plane heterostructures of MoS2-MoSe2. This methodology showcases high-quality and high-yield wafer output and potentially enables the seamless transition from lab-scale to industrial-scale 2D semiconductor complementary to silicon technology.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Xin Sui
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Ziqi Zhou
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Cheng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Yonggang Zuo
- Key Laboratory of Unconventional Metallurgy, Ministry of Education, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650032, China
| | - Chong Zhao
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
| | - Qunyang Li
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Enge Wang
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
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30
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Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, Shang D, Du L, Yang R, Yang W, Bai X, Shi D, Zhang G. Low power flexible monolayer MoS 2 integrated circuits. Nat Commun 2023; 14:3633. [PMID: 37336907 DOI: 10.1038/s41467-023-39390-9] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Accepted: 06/09/2023] [Indexed: 06/21/2023] Open
Abstract
Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS2 ICs in portable, wearable, and implantable electronics.
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Affiliation(s)
- Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China
| | - Shuyu Wu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yutuo Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dashan Shang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, China.
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Guo J, Peng R, Zhang X, Xin Z, Wang E, Wu Y, Li C, Fan S, Shi R, Liu K. Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300766. [PMID: 36866500 DOI: 10.1002/smll.202300766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/16/2023] [Indexed: 06/08/2023]
Abstract
Scaling up the chemical vapor deposition (CVD) of monolayer transition metal dichalcogenides (TMDCs) is in high demand for practical applications. However, for CVD-grown TMDCs on a large scale, there are many existing factors that result in their poor uniformity. In particular, gas flow, which usually leads to inhomogeneous distributions of precursor concentrations, has yet to be well controlled. In this work, the growth of uniform monolayer MoS2 on a large scale by the delicate control of gas flows of precursors, which is realized by vertically aligning a well-designed perforated carbon nanotube (p-CNT) film face-to-face with the substrate in a horizontal tube furnace, is achieved. The p-CNT film releases gaseous Mo precursor from the solid part and allows S vapor to pass through the hollow part, resulting in uniform distributions of both gas flow rate and precursor concentrations near the substrate. Simulation results further verify that the well-designed p-CNT film guarantees a steady gas flow and a uniform spatial distribution of precursors. Consequently, the as-grown monolayer MoS2 shows quite good uniformity in geometry, density, structure, and electrical properties. This work provides a universal pathway for the synthesis of large-scale uniform monolayer TMDCs, and will advance their applications in high-performance electronic devices.
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Affiliation(s)
- Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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32
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Huang M, Ali W, Yang L, Huang J, Yao C, Xie Y, Sun R, Zhu C, Tan Y, Liu X, Li S, Li Z, Pan A. Multifunctional Optoelectronic Synapses Based on Arrayed MoS 2 Monolayers Emulating Human Association Memory. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300120. [PMID: 37058134 DOI: 10.1002/advs.202300120] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/01/2023] [Indexed: 06/04/2023]
Abstract
Optoelectronic synaptic devices integrating light-perception and signal-storage functions hold great potential in neuromorphic computing for visual information processing, as well as complex brain-like learning, memorizing, and reasoning. Herein, the successful growth of MoS2 monolayer arrays assisted by gold nanorods guided precursor nucleation is demonstrated. Optical, spectral, and morphology characterizations of MoS2 prove that arrayed flakes are homogeneous monolayers, and they are further fabricated as optoelectronic devices showing featured photocurrent loops and stable optical responses. Typical synaptic behaviors of photo-induced short-term potentiation, long-term potentiation, and paired pulse facilitation are recorded under different light stimulations of 450, 532, and 633 nm lasers at various excitation powers. A visual sensing system consisting of 5 × 6 pixels is constructed to simulate the light-sensing image mapped by forgetting curves in real time. Moreover, the system presents the ability of utilizing associated images to restore vague and incomplete memories, which successfully mimics human intelligent behaviors of association memory and logical reasoning. The work emulates the brain-like artificial intelligence using arrayed 2D semiconductors, which paves an avenue to achieve smart retina and complex brain-like system.
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Affiliation(s)
- Ming Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Wajid Ali
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yunfei Xie
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ronghuan Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, P. R. China
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33
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Barman B, Linn AG, O'Beirne AL, Holleman J, Garcia C, Mapara V, Reno JL, McGill SA, Turkowski V, Karaiskaj D, Hilton DJ. Superradiant emission in a high-mobility two-dimensional electron gas. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35. [PMID: 37075774 DOI: 10.1088/1361-648x/acce8c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 04/19/2023] [Indexed: 05/03/2023]
Abstract
We use terahertz time-domain spectroscopy to study gallium arsenide two-dimensional electron gas samples in external magnetic field. We measure cyclotron decay as a function of temperature from 0.4 to10Kand a quantum confinement dependence of the cyclotron decay time belowT0=1.2K. In the wider quantum well, we observe a dramatic enhancement in the decay time due to the reduction in dephasing and the concomitant enhancement of superradiant decay in these systems. We show that the dephasing time in 2DEG's depends on both the scatteringrateand also on the distribution of scattering angles.
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Affiliation(s)
- B Barman
- College of Innovation and Technology, University of Michigan-Flint, Flint, MI 48502, United States of America
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294-1170, United States of America
| | - A G Linn
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294-1170, United States of America
| | - A L O'Beirne
- Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294-1170, United States of America
| | - J Holleman
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 30201, United States of America
| | - C Garcia
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 30201, United States of America
| | - V Mapara
- Department of Physics, University of South Florida, Tampa, FL 33620, United States of America
| | - J L Reno
- Center for Integrated Nanotechnologies, Sandia National Laboratory, Albuquerque, NM 87185, United States of America
| | - S A McGill
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 30201, United States of America
| | - V Turkowski
- Department of Physics, University of Central Florida, Orlando, FL 32816, United States of America
| | - D Karaiskaj
- Department of Physics, University of South Florida, Tampa, FL 33620, United States of America
| | - D J Hilton
- Department of Physics, Baylor University, Waco, TX 76798-7316, United States of America
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34
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Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, Watanabe K, Taniguchi T, Bai X, Shi D, Du L, Zhang G. Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance. NANO LETTERS 2023; 23:2764-2770. [PMID: 37010357 DOI: 10.1021/acs.nanolett.3c00031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS2 FETs. The fabricated 9 nm channel MoS2 FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 μA/μm at VDS = 2/1 V, record-low DIBL of ∼50 mV/V, and superior on/off ratio of 3 × 107 and low subthreshold swing of ∼100 mV/dec. Furthermore, the ultrashort channel MoS2 FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length.
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Affiliation(s)
- Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xudan Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yancong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Jieying Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yiru Ji
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yalin Peng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Kenji Watanabe
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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35
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Yang P, Liu F, Li X, Hu J, Zhou F, Zhu L, Chen Q, Gao P, Zhang Y. Highly Reproducible Epitaxial Growth of Wafer-Scale Single-Crystal Monolayer MoS 2 on Sapphire. SMALL METHODS 2023:e2300165. [PMID: 37035951 DOI: 10.1002/smtd.202300165] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 03/13/2023] [Indexed: 06/19/2023]
Abstract
2D semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next-generation transistors. To meet the industry needs, large-scale production of single-crystal monolayer TMDs in highly reproducible and energy-efficient manner is critically significant. Herein, it is reported that the high-reproducible, high-efficient epitaxial growth of wafer-scale monolayer MoS2 single crystals on the industry-compatible sapphire substrates, by virtue of a deliberately designed "face-to-face" metal-foil-based precursor supply route, carbon-cloth-filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short-distance transport, and moderate deposition of metal precursor on a wafer-scale substrate, affording high-efficient and high-reproducible growth of wafer-scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer-scale single-crystal 2D materials, thus propelling their practical applications in highly integrated high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fachen Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xuan Li
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qing Chen
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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36
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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37
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Huang Z, Deng W, Zhang Z, Zhao B, Zhang H, Wang D, Li B, Liu M, Huangfu Y, Duan X. Terminal Atom-Controlled Etching of 2D-TMDs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211252. [PMID: 36740628 DOI: 10.1002/adma.202211252] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 01/19/2023] [Indexed: 05/17/2023]
Abstract
The controlled etching of 2D transition metal dichalcogenides (2D-TMDs) is critical to understanding the growth mechanisms of 2D materials and patterning 2D materials but remains a major comprehensive challenge. Here, a rational strategy to control the terminal atoms of 2D-TMDs etched holes is reported. Using laser irradiation combined with an improved anisotropic thermal etching process under a determined atmosphere, terminal atom-controlled etched hole arrays are created on 2D-TMDs. By adjusting the gas atmosphere during the thermal etching stage, triangular etched hole arrays terminated by the tungsten zigzag (W-ZZ) edge (in an Ar/H2 atmosphere), hexagonal etched hole arrays terminated alternately by the W-ZZ edge and sulfur (selenium) zigzag (S-ZZ or Se-ZZ) edge (in a pure Ar atmosphere), and triangular etched hole arrays terminated by the S-ZZ (Se-ZZ) edge (in an Ar/sulfur [selenium] vapor atmosphere) can be obtained. Density functional theory reveals the forming energy of different edges and the different activities of metal atoms and chalcogenide atoms under different atmospheres, which determine the terminal atoms of the holes. This work may enhance the understanding of the etching and growth of 2D-TMDs. The 2D-TMDs hole arrays constructed by this work may have important applications in catalysis, nonlinear optics, spintronics, and large-scale integrated circuits.
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Affiliation(s)
- Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Wei Deng
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Bei Zhao
- School of Physics and Key Laboratory of MEMS of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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38
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Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS 2field-effect transistors. NANOTECHNOLOGY 2023; 34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
Abstract
The voyage of semiconductor industry to decrease the size of transistors to achieve superior device performance seems to near its physical dimensional limitations. The quest is on to explore emerging material systems that offer dimensional scaling to match the silicon- based technologies. The discovery of atomic flat two-dimensional materials has opened up a completely new avenue to fabricate transistors at sub-10 nanometer level which has the potential to compete with modern silicon-based semiconductor devices. Molybdenum disulfide (MoS2) is a two-dimensional layered material with novel semiconducting properties at atomic level seems like a promising candidate that can possibly meet the expectation of Moore's law. This review discusses the various 'fabrication challenges' in making MoS2based electronic devices from start to finish. The review outlines the intricate challenges of substrate selection and various synthesis methods of mono layer and few-layer MoS2. The review focuses on the various techniques and methods to minimize interface defect density at substrate/MoS2interface for optimum MoS2-based device performance. The tunable band-gap of MoS2with varying thickness presents a unique opportunity for contact engineering to mitigate the contact resistance issue using different elemental metals. In this work, we present a comprehensive overview of different types of contact materials with myriad geometries that show a profound impact on device performance. The choice of different insulating/dielectric gate oxides on MoS2in co-planar and vertical geometry is critically reviewed and the physical feasibility of the same is discussed. The experimental constraints of different encapsulation techniques on MoS2and its effect on structural and electronic properties are extensively discussed.
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Affiliation(s)
- Laxman Raju Thoutam
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
| | - Ribu Mathew
- School of Electrical & Electronics Engineering, VIT Bhopal University, Bhopal, 466114, India
| | - J Ajayan
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shubham Tayal
- Department of Electronics and Communication Engineering, SR University, Warangal, 506371, India
| | - Shantikumar V Nair
- Amrita School of Nanosciences and Molecular Medicine, Amrita Vishwa Vidyapeetham, Ponekkara, Kochi 682041, India
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39
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New insights into APCVD grown monolayer MoS 2 using time-domain terahertz spectroscopy. Sci Rep 2023; 13:4146. [PMID: 36914682 PMCID: PMC10011412 DOI: 10.1038/s41598-023-31102-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Accepted: 03/06/2023] [Indexed: 03/16/2023] Open
Abstract
In modern era, wireless communications at ultrafast speed are need of the hour and search for its solution through cutting edge sciences is a new perspective. To address this issue, the data rates in order of terabits per second (TBPS) could be a key step for the realization of emerging sixth generation (6G) networks utilizing terahertz (THz) frequency regime. In this context, new class of transition metal dichalcogenides (TMDs) have been introduced as potential candidates for future generation wireless THz technology. Herein, a strategy has been adopted to synthesize high-quality monolayer of molybdenum di-sulfide (MoS2) using indigenously developed atmospheric pressure chemical vapor deposition (APCVD) set-up. Further, the time-domain transmission and sheet conductivity were studied as well as a plausible mechanism of terahertz response for monolayer MoS2 has been proposed and compared with bulk MoS2. Hence, the obtained results set a stepping stone to employ the monolayer MoS2 as potential quantum materials benefitting the next generation terahertz communication devices.
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40
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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41
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Zheng P, Wei W, Liang Z, Qin B, Tian J, Wang J, Qiao R, Ren Y, Chen J, Huang C, Zhou X, Zhang G, Tang Z, Yu D, Ding F, Liu K, Xu X. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat Commun 2023; 14:592. [PMID: 36737606 PMCID: PMC9898269 DOI: 10.1038/s41467-023-36286-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023] Open
Abstract
The great challenge for the growth of non-centrosymmetric 2D single crystals is to break the equivalence of antiparallel grains. Even though this pursuit has been partially achieved in boron nitride and transition metal dichalcogenides (TMDs) growth, the key factors that determine the epitaxy of non-centrosymmetric 2D single crystals are still unclear. Here we report a universal methodology for the epitaxy of non-centrosymmetric 2D metal dichalcogenides enabled by accurate time sequence control of the simultaneous formation of grain nuclei and substrate steps. With this methodology, we have demonstrated the epitaxy of unidirectionally aligned MoS2 grains on a, c, m, n, r and v plane Al2O3 as well as MgO and TiO2 substrates. This approach is also applicable to many TMDs, such as WS2, NbS2, MoSe2, WSe2 and NbSe2. This study reveals a robust mechanism for the growth of various 2D single crystals and thus paves the way for their potential applications.
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Affiliation(s)
- Peiming Zheng
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Wenya Wei
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Zhihua Liang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Biao Qin
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Jinpeng Tian
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jinhuan Wang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Ruixi Qiao
- grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China
| | - Yunlong Ren
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Junting Chen
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Chen Huang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xu Zhou
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Guangyu Zhang
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Zhilie Tang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Dapeng Yu
- grid.263817.90000 0004 1773 1790Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055 China
| | - Feng Ding
- grid.9227.e0000000119573309Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Kaihui Liu
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Xiaozhi Xu
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
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42
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Hu J, Quan W, Yang P, Cui F, Liu F, Zhu L, Pan S, Huan Y, Zhou F, Fu J, Zhang G, Gao P, Zhang Y. Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices. ACS NANO 2023; 17:312-321. [PMID: 36573957 DOI: 10.1021/acsnano.2c07978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS2 single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS2 domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS2/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS2 films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2 single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.
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Affiliation(s)
- Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fachen Liu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
- International Center for Quantum Materials, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jiatian Fu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Guanhua Zhang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People's Republic of China
| | - Peng Gao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China
- International Center for Quantum Materials, Peking University, Beijing 100871, People's Republic of China
| | - Yanfeng Zhang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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43
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Li N, Wang Q, He C, Li J, Li X, Shen C, Huang B, Tang J, Yu H, Wang S, Du L, Yang W, Yang R, Shi D, Zhang G. 2D Semiconductor Based Flexible Photoresponsive Ring Oscillators for Artificial Vision Pixels. ACS NANO 2023; 17:991-999. [PMID: 36607196 DOI: 10.1021/acsnano.2c06921] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Artificial retina implantation provides an effective and feasible attempt for vision recovery in addition to retinal transplantation. The most advanced artificial retinas ever developed based on silicon technology are rigid and thus less compatible with the biosystem. Here we demonstrate flexible photoresponsive ring oscillators (PROs) based on the 2D semiconductor MoS2 for artificial retinas. Under natural light illuminations, arrayed PROs on flexible substrates serving as vision pixels can efficiently output light-intensity-dependent electrical pulses that are processable and transmittable in the human visual nerve system. Such PROs can work under low supply voltages below 1 V with a record-low power consumption, e.g. only 12.4 nW at a light intensity of 10 mW/cm2, decreased by ∼500 times compared with that of the state-of-the-art silicon devices. Such flexible artificial retinas with a simple device structure, high light-to-signal conversion efficiency, ultralow power consumption, and high tunability provide an alternative prosthesis for further clinical trials.
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Affiliation(s)
- Na Li
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jiawei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Cheng Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Biying Huang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Hua Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuopei Wang
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Rong Yang
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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44
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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45
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Zhuo F, Wu J, Li B, Li M, Tan CL, Luo Z, Sun H, Xu Y, Yu Z. Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors. RESEARCH (WASHINGTON, D.C.) 2023; 6:0057. [PMID: 36939429 PMCID: PMC10016345 DOI: 10.34133/research.0057] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/02/2023] [Indexed: 01/13/2023]
Abstract
Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance-power-area-cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility (μ), equivalent oxide thickness (EOT), and contact resistance (RC ), which enables high ON current (Ion ) with reduced driving voltage (Vdd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
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Affiliation(s)
- Fulin Zhuo
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jie Wu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Binhong Li
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Institute of Microelectronics,
Chinese Academy of Sciences, Beijing 100029, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Moyang Li
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chee Leong Tan
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering and College of Flexible Electronics (Future Technology),
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Huabin Sun
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Yong Xu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
| | - Zhihao Yu
- College of Integrated Circuit Science and Engineering,
Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China
- Address correspondence to: (B.L.); (Z.L.); (H.S.); (Y.X.); (Z.Y.)
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46
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Yang X, Li S, Sakuma Y. Highly Efficient Deposition of Centimeter-Scale MoS 2 Monolayer Film on Dragontrail Glass with Large Single-Crystalline Domains. SMALL METHODS 2022; 6:e2201079. [PMID: 36286955 DOI: 10.1002/smtd.202201079] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Revised: 10/05/2022] [Indexed: 06/16/2023]
Abstract
Highly efficient growth of a centimeter-scale MoS2 monolayer film by oxide scale sublimation chemical vapor deposition (OSSCVD) in a time as short as 60 s is reported. Benefiting from the superior catalytic ability of Dragontrail glass (DT-glass) substrate and the controlled large vapor supersaturation of the molybdenum source, the ultrafast deposition of MoS2 is realized with maintaining large-sized single-crystalline domains over 20 µm at maximum in the film. It is comparable to those reported for MoS2 grown in tens of minutes and even hours. Similar to the face-to-face precursor feed route, the gas-controlled OSSCVD with a showerhead configuration facilitates a homogeneous and controllable source supply. It enables high-quality monolayer MoS2 film deposition on 2 × 2 cm2 DT-glass with centimeter-scale uniformity confirmed by microscopic, spectroscopic, and electrical characterizations. Back-gate MoS2 field-effect transistors fabricated on polycrystalline continuous film exhibit the maximum field-effect mobility of 5.1 cm2 V-1 s-1 and a peak Ion /Ioff ratio of 5 × 108 . They reach 40 cm2 V-1 s-1 and 1.2 × 109 , respectively, on single-crystalline domains. These results are even greater than those for MoS2 grown using 1-2 orders of magnitude longer deposition time and higher temperatures. This study highlights the opportunities for low-cost high-throughput production of large-area high-quality monolayer MoS2 .
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Affiliation(s)
- Xu Yang
- Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Shisheng Li
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
| | - Yoshiki Sakuma
- Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan
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47
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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48
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Wang X, Chen X, Ma J, Gou S, Guo X, Tong L, Zhu J, Xia Y, Wang D, Sheng C, Chen H, Sun Z, Ma S, Riaud A, Xu Z, Cong C, Qiu Z, Zhou P, Xie Y, Bian L, Bao W. Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202472. [PMID: 35728050 DOI: 10.1002/adma.202202472] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
2D semiconductors, such as molybdenum disulfide (MoS2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film is successfully synthesized, which is then used to fabricate top-gated (TG) MoS2 field-effect transistors with wafer-scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass-transistor logic configuration based on pseudo-NMOS is then employed to design more complex MoS2 logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs.
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Affiliation(s)
- Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Jingyi Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Saifei Gou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Ling Tong
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Junqiang Zhu
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Yin Xia
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Die Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Chuming Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Honglei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Zhengzong Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Shunli Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Antoine Riaud
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Zihan Xu
- Shenzhen Six Carbon Technology, Shenzhen, 518055, China
| | - Chunxiao Cong
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Zhijun Qiu
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Yufeng Xie
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Lifeng Bian
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
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49
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Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
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Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
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50
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Ding D, Wang S, Xia Y, Li P, He D, Zhang J, Zhao S, Yu G, Zheng Y, Cheng Y, Xie M, Ding F, Jin C. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate. ACS NANO 2022; 16:17356-17364. [PMID: 36200750 DOI: 10.1021/acsnano.2c08188] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A mechanistic understanding of interactions between atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., ∼88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., ∼12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, ∼64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (∼36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (∼2.4 Å), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches ∼3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
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Affiliation(s)
- Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yipu Xia
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Pai Li
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Daliang He
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Junqiu Zhang
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Yonghui Zheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices and Department of Electronics, East China Normal University, Shanghai 200241, China
| | - Maohai Xie
- Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
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