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Zhang C, Gong Z, He D, Yan Y, Li S, Zhao K, Wang J, Wang Y, Zhang X. Research Progress of Single-Photon Emitters Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:918. [PMID: 38869543 PMCID: PMC11173489 DOI: 10.3390/nano14110918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2024] [Revised: 05/21/2024] [Accepted: 05/21/2024] [Indexed: 06/14/2024]
Abstract
From quantum communications to quantum computing, single-photon emitters (SPEs) are essential components of numerous quantum technologies. Two-dimensional (2D) materials have especially been found to be highly attractive for the research into nanoscale light-matter interactions. In particular, localized photonic states at their surfaces have attracted great attention due to their enormous potential applications in quantum optics. Recently, SPEs have been achieved in various 2D materials, while the challenges still remain. This paper reviews the recent research progress on these SPEs based on various 2D materials, such as transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and twisted-angle 2D materials. Additionally, we summarized the strategies to create, position, enhance, and tune the emission wavelength of these emitters by introducing external fields into these 2D system. For example, pronounced enhancement of the SPEs' properties can be achieved by coupling with external fields, such as the plasmonic field, and by locating in optical microcavities. Finally, this paper also discusses current challenges and offers perspectives that could further stimulate scientific research in this field. These emitters, due to their unique physical properties and integration potential, are highly appealing for applications in quantum information and communication, as well as other physical and technological fields.
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Affiliation(s)
| | | | | | | | | | | | | | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China; (C.Z.); (Z.G.); (D.H.); (Y.Y.); (S.L.); (K.Z.); (J.W.)
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China; (C.Z.); (Z.G.); (D.H.); (Y.Y.); (S.L.); (K.Z.); (J.W.)
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Sutter E, Kisslinger K, Unocic RR, Burns K, Hachtel J, Sutter P. Photonics in Multimaterial Lateral Heterostructures Combining Group IV Chalcogenide van der Waals Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307372. [PMID: 38054819 DOI: 10.1002/smll.202307372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 11/25/2023] [Indexed: 12/07/2023]
Abstract
Lateral heterostructures combining two multilayer group IV chalcogenide van der Waals semiconductors have attracted interest for optoelectronics, twistronics, and valleytronics, owing to their structural anisotropy, bulk-like electronic properties, enhanced optical thickness, and vertical interfaces enabling in-plane charge manipulation/separation, perpendicular to the trajectory of incident light. Group IV monochalcogenides support propagating photonic waveguide modes, but their interference gives rise to complex light emission patterns throughout the visible/near-infrared range both in uniform flakes and single-interface lateral heterostructures. Here, this work demonstrates the judicious integration of pure and alloyed monochalcogenide crystals into multimaterial heterostructures with unique photonic properties, notably the ability to select photonic modes with targeted discrete energies through geometric factors rather than band engineering. SnS-GeS1-xSex-GeSe-GeS1-xSex heterostructures with a GeS1-xSex active layer sandwiched laterally between GeSe and SnS, semiconductors with similar optical constants but smaller bandgaps, were designed and realized via sequential vapor transport synthesis. Raman spectroscopy, electron microscopy/diffraction, and energy-dispersive X-ray spectroscopy confirm a high crystal quality of the laterally stitched components with sharp interfaces. Nanometer-scale cathodoluminescence spectroscopy provides evidence for a facile transfer of electron-hole pairs across the lateral interfaces and demonstrates the selection of photon emission at discrete energies in the laterally embedded active (GeS1- xSex) part of the heterostructure.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Kim Kisslinger
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Kory Burns
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jordan Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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Rakhlin M, Sorokin S, Galimov A, Eliseyev I, Davydov V, Kirilenko D, Toropov A, Shubina T. Allotropic Ga 2Se 3/GaSe nanostructures grown by van der Waals epitaxy: narrow exciton lines and single-photon emission. NANOSCALE 2024; 16:2039-2047. [PMID: 38204419 DOI: 10.1039/d3nr05674k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga2Se3/GaSe nanostructures grown by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga2Se3, consisting of the same atoms in different arrangements. The energy positions of the narrow lines are determined by the quantum confinement in Ga2Se3 inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga2Se3. Such nanostructures exhibit single-photon emission with second-order correlation function g(2)(0) ∼ 0.10 at 10 K that makes them promising for quantum technologies.
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Luo W, Lawrie BJ, Puretzky AA, Tan Q, Gao H, Lingerfelt DB, Eichman G, Mcgee E, Swan AK, Liang L, Ling X. Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit. ACS NANO 2023. [PMID: 38044592 DOI: 10.1021/acsnano.3c05250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can provide only a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopy, supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ∼100 nm spectral range and 2 orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to observed CL photon superbunching. Also, the GaSe SPEs show excellent stability, where their properties remain unchanged after electron beam exposure. We anticipate that this comprehensive study on the nanoscale strain control of two-dimensional SPEs will provide key insights to guide the development of truly deterministic quantum photonics.
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Affiliation(s)
- Weijun Luo
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Benjamin J Lawrie
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Qishuo Tan
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Hongze Gao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - David B Lingerfelt
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gage Eichman
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Edward Mcgee
- Department of Electrical Engineering, Boston University, Boston, Massachusetts 02215, United States
| | - Anna K Swan
- Department of Electrical Engineering, Boston University, Boston, Massachusetts 02215, United States
- The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xi Ling
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- The Photonics Center, Boston University, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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Ngo GL, Nguyen L, Hermier JP, Lai ND. On-Chip 3D Printing of Polymer Waveguide-Coupled Single-Photon Emitter Based on Colloidal Quantum Dots. Polymers (Basel) 2023; 15:polym15092201. [PMID: 37177347 PMCID: PMC10180566 DOI: 10.3390/polym15092201] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 05/04/2023] [Accepted: 05/04/2023] [Indexed: 05/15/2023] Open
Abstract
In the field of quantum technology, there has been a growing interest in fully integrated systems that employ single photons due to their potential for high performance and scalability. Here, a simple method is demonstrated for creating on-chip 3D printed polymer waveguide-coupled single-photon emitters based on colloidal quantum dots (QDs). By using a simple low-one photon absorption technique, we were able to create a 3D polymeric crossed-arc waveguide structure with a bright QD on top. These waveguides can conduct both excitation laser and emitted single photons, which facilitates the characterization of single-photon signals at different outputs with a conventional confocal scanning system. To optimize the guiding effect of the polymeric waveguide structures, comprehensive 3D finite-difference time-domain simulations were performed. Our method provides a straightforward and cost-effective way to integrate high-performance single-photon sources with on-chip photonic devices, enabling scalable and versatile quantum photonic circuits for various applications.
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Affiliation(s)
- Gia Long Ngo
- LuMIn, ENS Paris-Saclay, CentraleSupélec, CNRS, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
- GEMaC, UVSQ, CNRS, Université Paris-Saclay, 78000 Versailles, France
| | - Long Nguyen
- Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA
| | | | - Ngoc Diep Lai
- LuMIn, ENS Paris-Saclay, CentraleSupélec, CNRS, Université Paris-Saclay, 91190 Gif-sur-Yvette, France
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Lyu J, Yin Y, Kong D, Zhao C, Zhang X, Li A, Yi W, Wu Y, Wang X, Liu R. On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire. J Phys Chem Lett 2023; 14:3861-3868. [PMID: 37067291 DOI: 10.1021/acs.jpclett.3c00613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires. ZnO nanowire arrays are integrated into CdSSe nanobelt chips by the dry transfer method. A one-dimensional (1D) ZnO nanowire forms high-quality optical resonators and serves as an indirect pumping light to stimulate CdSSe nanobelt chips, and then wavelength-tunable lasing is generated with the ultralow threshold of 3.88 μW. The lasing mechanism is quite different than direct excitation by nanosecond laser pulse and indirect pumping by ZnO emission. The ZnO-CdSSe blocks provide a new solution to realize nanowire lasing from linked nanowires rather than direct laser pumping and thus avoid the light direct damage under general nanosecond laser excitation.
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Affiliation(s)
- Jing Lyu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Yunsong Yin
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Denan Kong
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunyu Zhao
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xinyu Zhang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - An Li
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wen Yi
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yumei Wu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Xianshuang Wang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
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10
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On-chip generation and dynamic piezo-optomechanical rotation of single photons. Nat Commun 2022; 13:6998. [DOI: 10.1038/s41467-022-34372-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Accepted: 10/24/2022] [Indexed: 11/17/2022] Open
Abstract
AbstractIntegrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.
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Lv H, Chu L, Wang S, Sun S, Sun X, Jia Y, Chen F. Layer-dependent nonlinear optical properties of two-dimensional InSe and its applications in waveguide lasers. OPTICS EXPRESS 2022; 30:23986-23999. [PMID: 36225069 DOI: 10.1364/oe.462811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2022] [Accepted: 06/06/2022] [Indexed: 06/16/2023]
Abstract
The thickness-dependent third-order nonlinear optical properties of two-dimensional β-InSe and its potential applications as a saturable absorber in pulsed laser generation are investigated. InSe sheets with different layers are prepared by the chemical vapor deposition. Using open-aperture femtosecond Z-scan technique at 1030 nm, the modulation depth and nonlinear absorption coefficient are obtained to be 36% and -1.6 × 104 cm·GW-1, respectively. The intrinsic mechanism of the layer-dependent energy band structure evolution is analyzed based on density functional theory, and the theoretical analysis is consistent with the experimental results. Based on a waveguide cavity, a Q-switched mode-locked laser at 1 µm with a repetition frequency of 8.51 GHz and a pulse duration of 28 ps is achieved by utilizing the layered InSe as a saturable absorber. This work provides an in-depth understanding of layer-dependent properties of InSe and extends its applications in laser technology for compact light devices.
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12
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Qian Q, Wu W, Peng L, Wang Y, Tan AMZ, Liang L, Hus SM, Wang K, Choudhury TH, Redwing JM, Puretzky AA, Geohegan DB, Hennig RG, Ma X, Huang S. Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide. ACS NANO 2022; 16:7428-7437. [PMID: 35536919 DOI: 10.1021/acsnano.1c09809] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. In this work, we demonstrate that defects created by remote N2 plasma exposure in single-layer WS2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N2 plasma exposure dose, which is strongest for WS2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.
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Affiliation(s)
- Qingkai Qian
- Key Laboratory of Optoelectronic Technology and System (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Wenjing Wu
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Lintao Peng
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Yuanxi Wang
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Anne Marie Z Tan
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Saban M Hus
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tanushree H Choudhury
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Richard G Hennig
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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13
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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14
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Petrić MM, Kremser M, Barbone M, Nolinder A, Lyamkina A, Stier AV, Kaniber M, Müller K, Finley JJ. Tuning the Optical Properties of a MoSe 2 Monolayer Using Nanoscale Plasmonic Antennas. NANO LETTERS 2022; 22:561-569. [PMID: 34978824 DOI: 10.1021/acs.nanolett.1c02676] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Nanoplasmonic systems combined with optically active two-dimensional materials provide intriguing opportunities to explore and control light-matter interactions at extreme subwavelength length scales approaching the exciton Bohr radius. Here, we present room- and cryogenic-temperature investigations of a MoSe2 monolayer on individual gold dipole nanoantennas. By controlling nanoantenna size, the dipolar resonance is tuned relative to the exciton achieving a total tuning of ∼130 meV. Differential reflectance measurements performed on >100 structures reveal an apparent avoided crossing between exciton and dipolar mode and an exciton-plasmon coupling constant of g = 55 meV, representing g/(ℏωX) ≥ 3% of the transition energy. This places our hybrid system in the intermediate-coupling regime where spectra exhibit a characteristic Fano-like shape. We demonstrate active control by varying the polarization of the excitation light to programmably suppress coupling to the dipole mode. We further study the emerging optical signatures of the monolayer localized at dipole nanoantennas at 10 K.
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Affiliation(s)
- Marko M Petrić
- Walter Schottky Institut, Department of Electrical and Computer Engineering and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Malte Kremser
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Matteo Barbone
- Walter Schottky Institut, Department of Electrical and Computer Engineering and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Anna Nolinder
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Anna Lyamkina
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Michael Kaniber
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Kai Müller
- Walter Schottky Institut, Department of Electrical and Computer Engineering and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut, Physik-Department and MCQST, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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15
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So JP, Kim HR, Baek H, Jeong KY, Lee HC, Huh W, Kim YS, Watanabe K, Taniguchi T, Kim J, Lee CH, Park HG. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure. SCIENCE ADVANCES 2021; 7:eabj3176. [PMID: 34669464 PMCID: PMC8528413 DOI: 10.1126/sciadv.abj3176] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g(2)(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonjun Baek
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- Center for Quantum Information, Korea Institute of Science and Technology, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Corresponding author.
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16
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Errando-Herranz C, Schöll E, Picard R, Laini M, Gyger S, Elshaari AW, Branny A, Wennberg U, Barbat S, Renaud T, Sartison M, Brotons-Gisbert M, Bonato C, Gerardot BD, Zwiller V, Jöns KD. Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters. ACS PHOTONICS 2021; 8:1069-1076. [PMID: 34056034 PMCID: PMC8155555 DOI: 10.1021/acsphotonics.0c01653] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2020] [Indexed: 05/03/2023]
Abstract
Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g(2)(0) = 0.150 ± 0.093 and perform on-chip resonant excitation, yielding a g(2)(0) = 0.377 ± 0.081. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.
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Affiliation(s)
- Carlos Errando-Herranz
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- E-mail:
| | - Eva Schöll
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
- E-mail:
| | - Raphaël Picard
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Micaela Laini
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Samuel Gyger
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Ali W. Elshaari
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Art Branny
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Ulrika Wennberg
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Sebastien Barbat
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Thibaut Renaud
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Marc Sartison
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
| | - Mauro Brotons-Gisbert
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Cristian Bonato
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Brian D. Gerardot
- Institute
for Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
| | - Val Zwiller
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
| | - Klaus D. Jöns
- Department
of Applied Physics, KTH Royal Institute
of Technology, 114 28 Stockholm, Sweden
- Department
of Physics, Paderborn University, 33098 Paderborn, Germany
- E-mail:
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17
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Elshaari AW, Pernice W, Srinivasan K, Benson O, Zwiller V. Hybrid integrated quantum photonic circuits. NATURE PHOTONICS 2020; 14:10.1038/s41566-020-0609-x. [PMID: 34815738 PMCID: PMC8607459 DOI: 10.1038/s41566-020-0609-x] [Citation(s) in RCA: 141] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Accepted: 02/24/2020] [Indexed: 05/06/2023]
Abstract
Recent developments in chip-based photonic quantum circuits has radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations including optical connectivity and operation conditions, then highlights several successful realizations of key physical resources for building a quantum-teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid state platform, which hold great potential for quantum information applications.
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Affiliation(s)
- Ali W Elshaari
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Wolfram Pernice
- Institute of Physics, University of Muenster, Heisenbergstr, 11, 48149 Muenster, Germany
| | - Kartik Srinivasan
- Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD 20742, USA
| | - Oliver Benson
- Humboldt Universität zu Berlin & IRIS Adlershof, Nanooptics, Newtonstraße 15, 12489, Berlin, Germany
| | - Val Zwiller
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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18
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Yu Y, Zhong H, Yang J, Liu L, Liu J, Yu S. Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes. NANOTECHNOLOGY 2019; 30:485001. [PMID: 31469109 DOI: 10.1088/1361-6528/ab3efb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
III-V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend the QD emission wavelength to 850-880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes. The evolution of InGaAs nanostructures by high temperature indium droplet epitaxy on GaAs substrate is revealed. By carefully designing the appropriate growth conditions, symmetric QDs with the a small fine structure splitting of only ∼4.4 ± 0.8 μeV are demonstrated. Averaging over the emission energies of 32 QDs, an ensemble broadening of 12 meV is observed. Individual QDs are shown to emit nonclassically with clear evidence of photon antibunching. These highly uniform and symmetric nanostructures represent a very promising novel strategy for quantum information applications.
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Affiliation(s)
- Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China. Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha, 410073, People's Republic of China
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19
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Diep NQ, Liu CW, Wu SK, Chou WC, Huynh SH, Chang EY. Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy. Sci Rep 2019; 9:17781. [PMID: 31780756 PMCID: PMC6883029 DOI: 10.1038/s41598-019-54406-5] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Accepted: 11/13/2019] [Indexed: 11/30/2022] Open
Abstract
Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. The spiral-pyramidal structure of GaSe multi-layers was typically observed with the majority in ε-phase. Comprehensive investigations on temperature-dependent photoluminescence, Raman scattering, and X-ray diffraction indicated that the structure has been suffered an amount of strain, resulted from the screw-dislocation-driven growth mechanism as well as the stacking disorders between monolayer at the boundaries of the GaSe nanoflakes. In addition, Raman spectra under various wavelength laser excitations explored that the common ε-phase of 2D GaSe grown directly on GaAs can be transformed into the β-phase by introducing a Se-pretreatment period at the initial growth process. This work provides an understanding of molecular beam epitaxy growth of 2D materials on three-dimensional substrates and paves the way to realize future electronic and optoelectronic heterogeneous integrated technology as well as second harmonic generation applications.
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Affiliation(s)
- Nhu Quynh Diep
- Department of Electrophysics, College of Sciences, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C
| | - Cheng-Wei Liu
- Department of Electrophysics, College of Sciences, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C
| | - Ssu-Kuan Wu
- Department of Electrophysics, College of Sciences, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C
| | - Wu-Ching Chou
- Department of Electrophysics, College of Sciences, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C..
| | - Sa Hoang Huynh
- Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C.,School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, United Kingdom
| | - Edward Yi Chang
- Department of Materials Science and Engineering, College of Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C.,International College of Semiconductor Technology, National Chiao Tung University, 1001 University Road, Hsinchu, 30010, Taiwan, R.O.C
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20
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Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip. Nat Commun 2019; 10:4435. [PMID: 31570712 PMCID: PMC6768863 DOI: 10.1038/s41467-019-12421-0] [Citation(s) in RCA: 63] [Impact Index Per Article: 12.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2019] [Accepted: 09/04/2019] [Indexed: 12/24/2022] Open
Abstract
Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips. Integration of photonic circuits with single photon emitters provides a promising route towards scalable quantum photonic chips. Here, the authors integrate a WSe2 monolayer onto a SiN chip and demonstrate the coupling of single photon emitters in WSe2 with the guided mode of a SiN waveguide.
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21
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Brotons-Gisbert M, Proux R, Picard R, Andres-Penares D, Branny A, Molina-Sánchez A, Sánchez-Royo JF, Gerardot BD. Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide. Nat Commun 2019; 10:3913. [PMID: 31477714 PMCID: PMC6718420 DOI: 10.1038/s41467-019-11920-4] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2019] [Accepted: 07/30/2019] [Indexed: 11/08/2022] Open
Abstract
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.
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Affiliation(s)
- Mauro Brotons-Gisbert
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK.
| | - Raphaël Proux
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK
| | - Raphaël Picard
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK
| | - Daniel Andres-Penares
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071, Valencia, Spain
| | - Artur Branny
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK
- Department of Applied Physics, Royal Institute of Technology, Stockholm, 106 91, Sweden
| | - Alejandro Molina-Sánchez
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071, Valencia, Spain
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330, Braga, Portugal
| | - Juan F Sánchez-Royo
- ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia, P.O. Box 22085, 46071, Valencia, Spain.
| | - Brian D Gerardot
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, EH14 4AS, UK.
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22
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Esteve-Paredes JJ, Pakdel S, Palacios JJ. Quenching of Exciton Recombination in Strained Two-Dimensional Monochalcogenides. PHYSICAL REVIEW LETTERS 2019; 123:077402. [PMID: 31491087 DOI: 10.1103/physrevlett.123.077402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Indexed: 06/10/2023]
Abstract
We predict that long-lived excitons with very large binding energies can also exist in a single or few layers of monochalcogenides such as GaSe. Our theoretical study shows that excitons confined by a radial local strain field are unable to recombine despite electrons and holes coexisting in space. The localized single-particle states are calculated in the envelope function approximation based on a three-band k·p Hamiltonian obtained from density-functional-theory calculations. The binding energy and the decay rate of the exciton ground state are computed after including correlations in the basis of electron-hole pairs. The interplay between the localized strain and the caldera-type valence band characteristic of few-layered monochalcogenides creates localized electron and hole states with very different quantum numbers which hinders the recombination even for singlet excitons.
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Affiliation(s)
- J J Esteve-Paredes
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - Sahar Pakdel
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
- School of Electrical and Computer Engineering, University College of Engineering, University of Tehran, Tehran 14395-515, Iran
| | - J J Palacios
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Instituto Nicolás Cabrera (INC) and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Department of Physics, University of Texas, Austin, Texas 78712, USA
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23
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Abstract
Layered materials are very attractive for studies of light-matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.
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Affiliation(s)
- Milos Toth
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
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24
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Chen JH, Tan J, Wu GX, Zhang XJ, Xu F, Lu YQ. Tunable and enhanced light emission in hybrid WS 2-optical-fiber-nanowire structures. LIGHT, SCIENCE & APPLICATIONS 2019; 8:8. [PMID: 30651983 PMCID: PMC6333622 DOI: 10.1038/s41377-018-0115-9] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2018] [Revised: 12/06/2018] [Accepted: 12/10/2018] [Indexed: 05/08/2023]
Abstract
In recent years, the two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted renewed interest owing to their remarkable physical and chemical properties. Similar to that of graphene, the atomic thickness of TMDCs significantly limits their optoelectronic applications. In this study, we report a hybrid WS2-optical-fiber-nanowire (WOFN) structure for broadband enhancement of the light-matter interactions, i.e., light absorption, photoluminescence (PL) and second-harmonic generation (SHG), through evanescent field coupling. The interactions between the anisotropic light field of an optical fiber nanowire (OFN) and the anisotropic second-order susceptibility tensor of WS2 are systematically studied theoretically and experimentally. In particular, an efficient SHG in the WOFN appears to be 20 times larger than that in the same OFN before the WS2 integration under the same conditions. Moreover, we show that strain can efficiently manipulate the PL and SHG in the WOFN owing to the large configurability of the silica OFN. Our results demonstrate the potential applications of waveguide-coupled TMDCs structures for tunable high-performance photonic devices.
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Affiliation(s)
- Jin-hui Chen
- Key Laboratory of Intelligent Optical Sensing and Manipulation (Ministry of Education), College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Jun Tan
- School of Physics, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Guang-xing Wu
- Key Laboratory of Intelligent Optical Sensing and Manipulation (Ministry of Education), College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Xue-jin Zhang
- Key Laboratory of Intelligent Optical Sensing and Manipulation (Ministry of Education), College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Fei Xu
- Key Laboratory of Intelligent Optical Sensing and Manipulation (Ministry of Education), College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Yan-qing Lu
- Key Laboratory of Intelligent Optical Sensing and Manipulation (Ministry of Education), College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
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25
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Blauth M, Jürgensen M, Vest G, Hartwig O, Prechtl M, Cerne J, Finley JJ, Kaniber M. Coupling Single Photons from Discrete Quantum Emitters in WSe 2 to Lithographically Defined Plasmonic Slot Waveguides. NANO LETTERS 2018; 18:6812-6819. [PMID: 30153417 DOI: 10.1021/acs.nanolett.8b02687] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
We report the observation of the generation and routing of single plasmons generated by localized excitons in a WSe2 monolayer flake exfoliated onto lithographically defined Au-plasmonic waveguides. Statistical analysis of the position of different quantum emitters shows that they are (3.3 ± 0.7) times more likely to form close to the edges of the plasmonic waveguides. By characterizing individual emitters, we confirm their single-photon character via the observation of antibunching in the signal ( g(2)(0) = 0.42) and demonstrate that specific emitters couple to modes of the proximal plasmonic waveguide. Time-resolved measurements performed on emitters close to and far away from the plasmonic nanostructures indicate that Purcell factors up to 15 ± 3 occur, depending on the precise location of the quantum emitter relative to the tightly confined plasmonic mode. Measurement of the point spread function of five quantum emitters relative to the waveguide with <50 nm precision is compared with numerical simulations to demonstrate the potential for greater increases in the coupling efficiency for ideally positioned emitters. The integration of such strain-induced quantum emitters with deterministic plasmonic routing is a step toward deep-subwavelength on-chip single quantum light sources.
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Affiliation(s)
- M Blauth
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 Munich , Germany
| | - M Jürgensen
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - G Vest
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - O Hartwig
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - M Prechtl
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - J Cerne
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Department of Physics , University at Buffalo, The State University of New York , Buffalo , New York 14260 , United States
| | - J J Finley
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 Munich , Germany
| | - M Kaniber
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 Munich , Germany
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26
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Abstract
Development of scalable quantum photonic technologies requires on-chip integration of photonic components. Recently, hexagonal boron nitride (hBN) has emerged as a promising platform, following reports of hyperbolic phonon-polaritons and optically stable, ultra-bright quantum emitters. However, exploitation of hBN in scalable, on-chip nanophotonic circuits and cavity quantum electrodynamics (QED) experiments requires robust techniques for the fabrication of high-quality optical resonators. In this letter, we design and engineer suspended photonic crystal cavities from hBN and demonstrate quality (Q) factors in excess of 2000. Subsequently, we show deterministic, iterative tuning of individual cavities by direct-write EBIE without significant degradation of the Q-factor. The demonstration of tunable cavities made from hBN is an unprecedented advance in nanophotonics based on van der Waals materials. Our results and hBN processing methods open up promising avenues for solid-state systems with applications in integrated quantum photonics, polaritonics and cavity QED experiments.
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27
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Kianinia M, Bradac C, Sontheimer B, Wang F, Tran TT, Nguyen M, Kim S, Xu ZQ, Jin D, Schell AW, Lobo CJ, Aharonovich I, Toth M. All-optical control and super-resolution imaging of quantum emitters in layered materials. Nat Commun 2018; 9:874. [PMID: 29491451 PMCID: PMC5830405 DOI: 10.1038/s41467-018-03290-0] [Citation(s) in RCA: 49] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Accepted: 02/02/2018] [Indexed: 11/10/2022] Open
Abstract
Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.
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Affiliation(s)
- Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Carlo Bradac
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Bernd Sontheimer
- Institut für Physik, Humboldt-Universität zu Berlin, 12489, Berlin, Germany
| | - Fan Wang
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Dayong Jin
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Andreas W Schell
- Department of Electronic Science and Engineering, Kyoto University, 615-8510, Kyoto, Japan
| | - Charlene J Lobo
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
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28
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Palacios-Berraquero C. Atomically-Thin Quantum Light Emitting Diodes. QUANTUM CONFINED EXCITONS IN 2-DIMENSIONAL MATERIALS 2018. [DOI: 10.1007/978-3-030-01482-7_4] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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