1
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Li H, Zhang T, Yi Z, Chen X, Dai Z, Tan J. High Sensitive and Stable UV-Vis Photodetector Based on MoS 2/MoO 3 vdW Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33829-33837. [PMID: 38913340 DOI: 10.1021/acsami.4c06403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
The development of new high-performance photodetectors (PDs) is currently focused on achieving small size, low power consumption, low cost, and large bandwidth. Two-dimensional (2D) materials and heterostructures offer promising approaches for the future development of optoelectronic devices. However, there has been limited research on 2D wide-bandgap semiconductor heterostructures. In this study, we successfully constructed a MoS2/MoO3 vdW heterojunction PD. This PD exhibited excellent response and significant photovoltaic behavior in the ultraviolet (UV) to visible (Vis) range. Under 365 nm UV light and 1 V bias voltage, the PD demonstrated a high responsivity of 645 mA/W, a high specific detectivity of 8.98 × 1010 Jones, and fast response speeds of 55.9/59.6 ms. At 0 V bias voltage, the responsivity reached as high as 157 mA/W. Furthermore, the PD exhibited remarkable stability in its performance. These outstanding characteristics can be attributed to the strong internal electric field created by the type II heterojunction structure and the chemical stability of the materials. This work opens a route for the application of 2D wide-bandgap semiconductor materials in optoelectronic devices.
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Affiliation(s)
- Haoyu Li
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Tian Zhang
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Zixuan Yi
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Xingyu Chen
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Zhigao Dai
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
| | - Jin Tan
- Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China
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2
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Molaei-Yeznabad A, Abedi K. Optimal design of graphene-based plasmonic enhanced photodetector using PSO. Sci Rep 2024; 14:15291. [PMID: 38961178 PMCID: PMC11222467 DOI: 10.1038/s41598-024-65311-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2024] [Accepted: 06/19/2024] [Indexed: 07/05/2024] Open
Abstract
In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal-oxide-semiconductor (CMOS) technology. The proposed photodetector structure is designed to minimize fabrication challenges and reduce production costs compared to more complex alternatives. Graphene has been used for its unique properties in the detection region, titanium nitride (TiN) as a CMOS-compatible metal, and both to aid in plasmonic excitation. Photodetectors have key parameters influenced by multiple independent variables. However, practical constraints prevent thorough adjustment of all variables to achieve optimal parameter values, often resulting in analysis based on several simplified models. Here we optimize these variables by presenting a new approach in the field of photodetectors using the capabilities of the PSO algorithm. As a result, for the proposed device at the wavelength of 1550 nm, the voltage responsivity is 210.6215 V/W, the current responsivity is 3.7213 A/W, the ultra-compressed length is less than 3 μ m , and the specific detectivity is 2.566×10 7 Jones were obtained. Furthermore, the device in question works under the photothermoelectric effect (PTE) at zero bias and has zero dark current, which ultimately resulted in a very low noise equivalent power (NEP) of 4.5361 pW / Hz .
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Affiliation(s)
| | - Kambiz Abedi
- Faculty of Electrical Engineering, Shahid Beheshti University, Tehran, 1983969411, Iran.
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3
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403176. [PMID: 39031754 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional Materials, Zhoukou Normal University, Zhoukou, 466001, China
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical Mathematics, Beijing, 100190, China
| | - Tanju Yildirim
- Faculty of Science and Engineering, Southern Cross University, East Lismore, NSW, 2480, Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
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4
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Wang XX, Zeng G, Yu QJ, Shen L, Shi CY, Lu HL. Photodetectors integrating waveguides and semiconductor materials. NANOSCALE 2024. [PMID: 38410877 DOI: 10.1039/d4nr00305e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Photodetectors integrating substrates and semiconductor materials are increasingly attractive for applications in optical communication, optical sensing, optical computing, and military owing to the unique optoelectronic properties of semiconductor materials. However, it is still a challenge to realize high-performance photodetectors by only integrating substrates and semiconductor materials because of the limitation of incident light in contact with sensitive materials. In recent years, waveguides such as silicon (Si) and silicon nitride (Si3N4) have attracted extensive attention owing to their unique optical properties. Waveguides can be easily hetero-integrated with semiconductor materials, thus providing a promising approach for realizing high-performance photodetectors. Herein, we review recent advances in photodetectors integrating waveguides in two parts. The first involves the waveguide types and semiconductor materials commonly used to fabricate photodetectors, including Si, Si3N4, gallium nitride, organic waveguides, graphene, and MoTe2. The second involves the photodetectors of different wavelengths that integrate waveguides, ranging from ultraviolet to infrared. These hybrid photodetectors integrating waveguides and semiconductor materials provide an alternative way to realize multifunctional and high-performance photonic integrated chips and circuits.
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Affiliation(s)
- Xin-Xue Wang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Qiu-Jun Yu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Lei Shen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Cai-Yu Shi
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province 314100, China
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5
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Li Z, Cheng Z, Wang Y, Zhang Z, Wu J. Single-layer graphene based resistive humidity sensor enhanced by graphene quantum dots. NANOTECHNOLOGY 2024; 35:185503. [PMID: 38358678 DOI: 10.1088/1361-6528/ad22ad] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Accepted: 01/24/2024] [Indexed: 02/16/2024]
Abstract
Graphene is broadly applied as sensitive sensing material results from its superb features. Concurrently, as a derivative of graphene with 0D structure, graphene quantum dots (GQDs) offer more possibilities as a supportive sensing material due to its adjustable size and functional group modification. In this work, GQDs are introduced to single-layer graphene (SLG) based humidity sensor to enhance the sensing performance. Specifically, consistent resistance response to relative humidity (RH) is extended from the range of 10%-60% to 10%-90% by contrary to original SLG based sensor. Parallelly, effect of the amount of GQDs is investigated by means of multiple GQDs deposition. As the resultant higher binding efficiency between water molecules and the functional groups of GQDs, improved response rate is observed. For the case of 4-time deposition of GQDs, the response rate (ΔR/R) reaches ∼130% in RH range of 10%-90%. Besides, the response time and recovery time are ∼0.7 s and ∼1.1 s, respectively. The fluctuation of the resistance change of the sensor under constant humidity is less than 5% over a month which demonstrates long-term reliability.
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Affiliation(s)
- Zhenyu Li
- School of Measurement and Communication Engineering, Harbin University of Science and Technology, Harbin, People's Republic of China
| | - Zhihao Cheng
- School of Measurement and Communication Engineering, Harbin University of Science and Technology, Harbin, People's Republic of China
| | - Yaping Wang
- School of Measurement and Communication Engineering, Harbin University of Science and Technology, Harbin, People's Republic of China
| | - Zekun Zhang
- School of Measurement and Communication Engineering, Harbin University of Science and Technology, Harbin, People's Republic of China
| | - Jianhan Wu
- School of Measurement and Communication Engineering, Harbin University of Science and Technology, Harbin, People's Republic of China
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6
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Tsai MY, Tsai TH, Gandhi AC, Lu HL, Li JX, Chen PL, Chen KW, Chen SZ, Chen CH, Liu CH, Lin YF, Chiu PW. Ultrafast and Broad-Band Graphene Heterojunction Photodetectors with High Gain. ACS NANO 2023; 17:25037-25044. [PMID: 38096421 DOI: 10.1021/acsnano.3c07665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Graphene possesses an exotic band structure that spans a wide range of important technological wavelength regimes for photodetection, all within a single material. Conventional methods aimed at enhancing detection efficiency often suffer from an extended response time when the light is switched off. The task of achieving ultrafast broad-band photodetection with a high gain remains challenging. Here, we propose a devised architecture that combines graphene with a photosensitizer composed of an alternating strip superstructure of WS2-WSe2. Upon illumination, n+-WS2 and p+-WSe2 strips create alternating electron- and hole-conduction channels in graphene, effectively overcoming the tradeoff between the responsivity and switch time. This configuration allows for achieving a responsivity of 1.7 × 107 mA/W, with an extrinsic response time of 3-4 μs. The inclusion of the superstructure booster enables photodetection across a wide range from the near-ultraviolet to mid-infrared regime and offers a distinctive photogating route for high responsivity and fast temporal response in the pursuit of broad-band detection.
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Affiliation(s)
- Meng-Yu Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tsung-Han Tsai
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Hsueh-Lung Lu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kai-Wen Chen
- Department of Materials Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Sun-Zen Chen
- Center for Nanotechnology, Materials Science and Microsystem, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chang-Hua Liu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Po-Wen Chiu
- Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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7
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Wu C, Ku C, Yu M, Yang J, Wu P, Huang C, Lu T, Huang J, Ishii S, Chen K. Near-Field Photodetection in Direction Tunable Surface Plasmon Polaritons Waveguides Embedded with Graphene. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302707. [PMID: 37661570 PMCID: PMC10602515 DOI: 10.1002/advs.202302707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Revised: 08/06/2023] [Indexed: 09/05/2023]
Abstract
2D materials have manifested themselves as key components toward compact integrated circuits. Because of their capability to circumvent the diffraction limit, light manipulation using surface plasmon polaritons (SPPs) is highly-valued. In this study, plasmonic photodetection using graphene as a 2D material is investigated. Non-scattering near-field detection of SPPs is implemented via monolayer graphene stacked under an SPP waveguide with a symmetric antenna. Energy conversion between radiation power and electrical signals is utilized for the photovoltaic and photoconductive processes of the gold-graphene interface and biased electrodes, measuring a maximum photoresponsivity of 29.2 mA W-1 . The generated photocurrent is altered under the polarization state of the input light, producing a 400% contrast between the maximum and minimum signals. This result is universally applicable to all on-chip optoelectronic circuits.
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Affiliation(s)
- Chia‐Hung Wu
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Chih‐Jen Ku
- Institute of Imaging and Biomedical PhotonicsCollege of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Min‐Wen Yu
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Jhen‐Hong Yang
- College of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
| | - Pei‐Yuan Wu
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
| | - Chen‐Bin Huang
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
| | - Tien‐Chang Lu
- Department of PhotonicsCollege of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Jer‐Shing Huang
- Leibniz Institute of Photonic TechnologyAlbert‐Einstein Straße 907745JenaGermany
- Institute of Physical Chemistry and Abbe Center of PhotonicsFriedrich‐Schiller‐Universität JenaHelmholtzweg 4D‐07743JenaGermany
- Research Center for Applied SciencesAcademia Sinica128 Academia Road, Sec. 2, Nankang DistrictTaipei11529Taiwan
- Department of ElectrophysicsNational Yang Ming Chiao Tung UniversityNo. 1001 Daxue Rd, East DistrictHsinchu30010Taiwan
| | - Satoshi Ishii
- Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science (NIMS)1‐1 NamikiTsukubaIbaraki305‐0044Japan
| | - Kuo‐Ping Chen
- Institute of Imaging and Biomedical PhotonicsCollege of PhotonicsNational Yang Ming Chiao Tung University301 Gaofa 3rd RoadTainan71150Taiwan
- Institute of Photonics TechnologiesNational Tsing Hua UniversityHsinchu300Taiwan
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8
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Yu X, Principi A, Tielrooij KJ, Bonn M, Kavokine N. Electron cooling in graphene enhanced by plasmon-hydron resonance. NATURE NANOTECHNOLOGY 2023; 18:898-904. [PMID: 37349505 PMCID: PMC10427419 DOI: 10.1038/s41565-023-01421-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 05/15/2023] [Indexed: 06/24/2023]
Abstract
Evidence is accumulating for the crucial role of a solid's free electrons in the dynamics of solid-liquid interfaces. Liquids induce electronic polarization and drive electric currents as they flow; electronic excitations, in turn, participate in hydrodynamic friction. Yet, the underlying solid-liquid interactions have been lacking a direct experimental probe. Here we study the energy transfer across liquid-graphene interfaces using ultrafast spectroscopy. The graphene electrons are heated up quasi-instantaneously by a visible excitation pulse, and the time evolution of the electronic temperature is then monitored with a terahertz pulse. We observe that water accelerates the cooling of the graphene electrons, whereas other polar liquids leave the cooling dynamics largely unaffected. A quantum theory of solid-liquid heat transfer accounts for the water-specific cooling enhancement through a resonance between the graphene surface plasmon mode and the so-called hydrons-water charge fluctuations-particularly the water libration modes, which allows for efficient energy transfer. Our results provide direct experimental evidence of a solid-liquid interaction mediated by collective modes and support the theoretically proposed mechanism for quantum friction. They further reveal a particularly large thermal boundary conductance for the water-graphene interface and suggest strategies for enhancing the thermal conductivity in graphene-based nanostructures.
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Affiliation(s)
- Xiaoqing Yu
- Max Planck Institute for Polymer Research, Mainz, Germany
| | | | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra, Barcelona, Spain
- Department of Applied Physics, TU Eindhoven, Eindhoven, Netherlands
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Mainz, Germany
| | - Nikita Kavokine
- Max Planck Institute for Polymer Research, Mainz, Germany.
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, USA.
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9
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Koepfli SM, Baumann M, Koyaz Y, Gadola R, Güngör A, Keller K, Horst Y, Nashashibi S, Schwanninger R, Doderer M, Passerini E, Fedoryshyn Y, Leuthold J. Metamaterial graphene photodetector with bandwidth exceeding 500 gigahertz. Science 2023; 380:1169-1174. [PMID: 37319195 DOI: 10.1126/science.adg8017] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Accepted: 05/11/2023] [Indexed: 06/17/2023]
Abstract
Although graphene has met many of its initially predicted optoelectronic, thermal, and mechanical properties, photodetectors with large spectral bandwidths and extremely high frequency responses remain outstanding. In this work, we demonstrate a >500 gigahertz, flat-frequency response, graphene-based photodetector that operates under ambient conditions across a 200-nanometer-wide spectral band with center wavelengths adaptable from <1400 to >4200 nanometers. Our detector combines graphene with metamaterial perfect absorbers with direct illumination from a single-mode fiber, which breaks with the conventional miniaturization of photodetectors on an integrated photonic platform. This design allows for much higher optical powers while still allowing record-high bandwidths and data rates. Our results demonstrate that graphene photodetectors can outperform conventional technologies in terms of speed, bandwidth, and operation across a large spectral range.
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Affiliation(s)
- Stefan M Koepfli
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Michael Baumann
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yesim Koyaz
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Robin Gadola
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Arif Güngör
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Killian Keller
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yannik Horst
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Shadi Nashashibi
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | | | - Michael Doderer
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Elias Passerini
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yuriy Fedoryshyn
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Juerg Leuthold
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
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10
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Lyu J, Yin Y, Kong D, Zhao C, Zhang X, Li A, Yi W, Wu Y, Wang X, Liu R. On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire. J Phys Chem Lett 2023; 14:3861-3868. [PMID: 37067291 DOI: 10.1021/acs.jpclett.3c00613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires. ZnO nanowire arrays are integrated into CdSSe nanobelt chips by the dry transfer method. A one-dimensional (1D) ZnO nanowire forms high-quality optical resonators and serves as an indirect pumping light to stimulate CdSSe nanobelt chips, and then wavelength-tunable lasing is generated with the ultralow threshold of 3.88 μW. The lasing mechanism is quite different than direct excitation by nanosecond laser pulse and indirect pumping by ZnO emission. The ZnO-CdSSe blocks provide a new solution to realize nanowire lasing from linked nanowires rather than direct laser pumping and thus avoid the light direct damage under general nanosecond laser excitation.
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Affiliation(s)
- Jing Lyu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Yunsong Yin
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Denan Kong
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunyu Zhao
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xinyu Zhang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - An Li
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wen Yi
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yumei Wu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Xianshuang Wang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
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11
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Lee H, Koo Y, Kumar S, Jeong Y, Heo DG, Choi SH, Joo H, Kang M, Siddique RH, Kim KK, Lee HS, An S, Choo H, Park KD. All-optical control of high-purity trions in nanoscale waveguide. Nat Commun 2023; 14:1891. [PMID: 37045823 PMCID: PMC10097695 DOI: 10.1038/s41467-023-37481-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 03/20/2023] [Indexed: 04/14/2023] Open
Abstract
The generation of high-purity localized trions, dynamic exciton-trion interconversion, and their spatial modulation in two-dimensional (2D) semiconductors are building blocks for the realization of trion-based optoelectronic devices. Here, we present a method for the all-optical control of the exciton-to-trion conversion process and its spatial distributions in a MoS2 monolayer. We induce a nanoscale strain gradient in a 2D crystal transferred on a lateral metal-insulator-metal (MIM) waveguide and exploit propagating surface plasmon polaritons (SPPs) to localize hot electrons. These significantly increase the electrons and efficiently funnel excitons in the lateral MIM waveguide, facilitating complete exciton-to-trion conversion even at ambient conditions. Additionally, we modulate the SPP mode using adaptive wavefront shaping, enabling all-optical control of the exciton-to-trion conversion rate and trion distribution in a reversible manner. Our work provides a platform for harnessing excitonic quasiparticles efficiently in the form of trions at ambient conditions, enabling high-efficiency photoconversion.
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Affiliation(s)
- Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Shailabh Kumar
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA
- Meta Vision Lab, Samsung Advanced Institute of Technology (SAIT), Pasadena, CA, 91101, USA
| | - Yunjo Jeong
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Dong Gwon Heo
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Radwanul Hasan Siddique
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA
- Meta Vision Lab, Samsung Advanced Institute of Technology (SAIT), Pasadena, CA, 91101, USA
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hong Seok Lee
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea.
| | - Sangmin An
- Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea
| | - Hyuck Choo
- Department of Medical Engineering, California Institute of Technology (Caltech), Pasadena, CA, 91125, USA.
- Advanced Sensor Lab, Device Research Center, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea.
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
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12
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Gherabli R, Indukuri SRKC, Zektzer R, Frydendahl C, Levy U. MoSe 2/WS 2 heterojunction photodiode integrated with a silicon nitride waveguide for near infrared light detection with high responsivity. LIGHT, SCIENCE & APPLICATIONS 2023; 12:60. [PMID: 36869032 PMCID: PMC9984525 DOI: 10.1038/s41377-023-01088-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 01/09/2023] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
We demonstrate experimentally the realization and the characterization of a chip-scale integrated photodetector for the near-infrared spectral regime based on the integration of a MoSe2/WS2 heterojunction on top of a silicon nitride waveguide. This configuration achieves high responsivity of ~1 A W-1 at the wavelength of 780 nm (indicating an internal gain mechanism) while suppressing the dark current to the level of ~50 pA, much lower as compared to a reference sample of just MoSe2 without WS2. We have measured the power spectral density of the dark current to be as low as ~1 × 10-12 A Hz-0.5, from which we extract the noise equivalent power (NEP) to be ~1 × 10-12 W Hz-0.5. To demonstrate the usefulness of the device, we use it for the characterization of the transfer function of a microring resonator that is integrated on the same chip as the photodetector. The ability to integrate local photodetectors on a chip and to operate such devices with high performance at the near-infrared regime is expected to play a critical role in future integrated devices in the field of optical communications, quantum photonics, biochemical sensing, and more.
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Affiliation(s)
- Rivka Gherabli
- Department of Applied Physics, The Faculty of Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - S R K C Indukuri
- Department of Applied Physics, The Faculty of Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Roy Zektzer
- Department of Applied Physics, The Faculty of Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Christian Frydendahl
- Department of Applied Physics, The Faculty of Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Uriel Levy
- Department of Applied Physics, The Faculty of Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
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13
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Chen X, Zhang Y, Tian R, Wu X, Luo Z, Liu Y, Wang X, Zhao J, Gan X. Van der Waals Nonlinear Photodetector with Quadratic Photoresponse. NANO LETTERS 2023; 23:1023-1029. [PMID: 36706340 DOI: 10.1021/acs.nanolett.2c04472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
With unique electronic and optical attributes and dangling-bond-free surface, two-dimensional (2D) materials have broadened the functionalities of photodetectors. Here, we report a quadratically nonlinear photodetector (QNPD) composed of a van der Waals (vdW) stacked GaSe/InSe heterostructure. Compared with the reported 2D material-based photodetectors, the extra second-harmonic generation (SHG) process in GaSe/InSe leads to the quadratically nonlinear function between photocurrent and optical intensity, extending the photodetection wavelength from 900 to 1750 nm. The QNPD is highly sensitive to the variation of optical intensity with improved spatial resolution. With the light-light interaction in SHG converted into electrical signal directly, we also demonstrate the QNPD as an autocorrelator for measuring ultrafast pulse widths and an optoelectronic mixer of two modulated pulses for signal processings. The simultaneous involvement of light-light interaction and photoelectric conversion in the vdW stacked QNPD promises its potential to simplify the optoelectronic systems.
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Affiliation(s)
- Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xianghu Wu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing210093, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
- School of Microelectronics, Northwestern Polytechnical University, Xi'an710129, China
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14
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Li C, Tian R, Chen X, Gu L, Luo Z, Zhang Q, Yi R, Li Z, Jiang B, Liu Y, Castellanos-Gomez A, Chua SJ, Wang X, Sun Z, Zhao J, Gan X. Waveguide-Integrated MoTe 2 p- i- n Homojunction Photodetector. ACS NANO 2022; 16:20946-20955. [PMID: 36413764 DOI: 10.1021/acsnano.2c08549] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2 p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.
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Affiliation(s)
- Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Biqiang Jiang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), MadridE-28049, Spain
| | - Soo-Jin Chua
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore
- LEES Program, Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore
| | - Xiaomu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, AaltoFI-00076, Finland
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
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15
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Fan M, Zhang Y, Chen D, Ren L, Yang Q, Zhou C. Tunable light trapping in the graphene metasurface. APPLIED OPTICS 2022; 61:10694-10699. [PMID: 36606928 DOI: 10.1364/ao.475861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 11/23/2022] [Indexed: 06/17/2023]
Abstract
Graphene metasurfaces based on surface plasmon resonance can greatly enhance the interaction between light and matter at the nanoscale. At present, the resonance of graphene metasurfaces is widely used to enhance the absorption of atomic layer graphene, but little work has focused on the light field trapping capabilities it brings. In this paper, we numerically study the light trapping and manipulation of an asymmetric graphene metasurface. The designed device supports two resonant modes, and the multipole decomposition confirms that the electric dipole response dominates them. The calculated average electric field enhancement factor (EF) can reach 1206 and 1779, respectively. The near-field distribution indicates that the electric field is mainly localized in the graphene nanodisks. When the Fermi energy changes, the intensity and peak position of EF can be effectively regulated. In addition, when the polarization of the incident light is adjusted, the light field capture of the two modes is independently regulated. These results reveal that the graphene metasurface has significant light field capture and regulation ability, which provides a new idea for the realization of active regulation of high-performance low-dimensional optical devices.
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16
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In C, Kim UJ, Choi H. Two-dimensional Dirac plasmon-polaritons in graphene, 3D topological insulator and hybrid systems. LIGHT, SCIENCE & APPLICATIONS 2022; 11:313. [PMID: 36302746 PMCID: PMC9613982 DOI: 10.1038/s41377-022-01012-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 08/22/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Collective oscillations of massless particles in two-dimensional (2D) Dirac materials offer an innovative route toward implementing atomically thin devices based on low-energy quasiparticle interactions. Strong confinement of near-field distribution on the 2D surface is essential to demonstrate extraordinary optoelectronic functions, providing means to shape the spectral response at the mid-infrared (IR) wavelength. Although the dynamic polarization from the linear response theory has successfully accounted for a range of experimental observations, a unified perspective was still elusive, connecting the state-of-the-art developments based on the 2D Dirac plasmon-polaritons. Here, we review recent works on graphene and three-dimensional (3D) topological insulator (TI) plasmon-polariton, where the mid-IR and terahertz (THz) radiation experiences prominent confinement into a deep-subwavelength scale in a novel optoelectronic structure. After presenting general light-matter interactions between 2D Dirac plasmon and subwavelength quasiparticle excitations, we introduce various experimental techniques to couple the plasmon-polaritons with electromagnetic radiations. Electrical and optical controls over the plasmonic excitations reveal the hybridized plasmon modes in graphene and 3D TI, demonstrating an intense near-field interaction of 2D Dirac plasmon within the highly-compressed volume. These findings can further be applied to invent optoelectronic bio-molecular sensors, atomically thin photodetectors, and laser-driven light sources.
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Affiliation(s)
- Chihun In
- Department of Physics, Freie Universität Berlin, Berlin, 14195, Germany
- Department of Physical Chemistry, Fritz-Haber-Institute of the Max-Planck-Society, Berlin, 14195, Germany
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Un Jeong Kim
- Advanced Sensor Laboratory, Samsung Advanced Institute of Technology, Suwon, Gyeonggi-do, 16419, Republic of Korea.
| | - Hyunyong Choi
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
- Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea.
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17
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Zhang Z, Chen J, Jia H, Chen J, Li F, Wang X, Liu S, Ou H, Liu S, Chen H, Bie YQ, Deng S. A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control. iScience 2022; 25:105164. [PMID: 36204276 PMCID: PMC9531171 DOI: 10.1016/j.isci.2022.105164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2022] [Revised: 09/05/2022] [Accepted: 09/16/2022] [Indexed: 12/02/2022] Open
Abstract
As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a simple one-step lithography process and are frequently used in hybrid integration with on-chip optical structures. However, the polarization-dependent responsivity of such a configuration is less explored in the near-infrared band, and a clear understanding is still missing. Here we fabricate near-infrared tunable multiple modes twisted bilayer graphene photodetector enabled by the coplanar split-gate control and confirm that the photothermoelectric effect governs the photovoltage mechanism of the p-n junction mode. Our study also elucidates that the discrepancy of the responsivities under different linear polarizations is owing to the different cavity modes and provides a valuable example for designing chip-integrated optoelectronic devices. Design of coplanar split-gated controlled multimode near-infrared photodetector Verification of the photothermoelectric mechanism of the p-n junction Understanding the reason for the polarization-dependent responsivity
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18
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Recent Progress on Graphene Flexible Photodetectors. MATERIALS 2022; 15:ma15144820. [PMID: 35888288 PMCID: PMC9318373 DOI: 10.3390/ma15144820] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2022] [Revised: 06/18/2022] [Accepted: 06/29/2022] [Indexed: 01/02/2023]
Abstract
In recent years, optoelectronics and related industries have developed rapidly. As typical optoelectronics devices, photodetectors (PDs) are widely applied in various fields. The functional materials in traditional PDs exhibit high hardness, and the performance of these rigid detectors is thus greatly reduced upon their stretching or bending. Therefore, the development of new flexible PDs with bendable and foldable functions is of great significance and has much interest in wearable, implantable optoelectronic devices. Graphene with excellent electrical and optical performance constructed on various flexible and rigid substrates has great potential in PDs. In this review, recent research progress on graphene-based flexible PDs is outlined. The research states of graphene conductive films are summarized, focusing on PDs based on single-component graphene and mixed-structure graphene, with a systematic analysis of their optical and mechanical performance, and the techniques for optimizing the PDs are also discussed. Finally, a summary of the current applications of graphene flexible PDs and perspectives is provided, and the remaining challenges are discussed.
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19
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Vangelidis I, Bellas DV, Suckow S, Dabos G, Castilla S, Koppens FHL, Ferrari AC, Pleros N, Lidorikis E. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors. ACS PHOTONICS 2022; 9:1992-2007. [PMID: 35726242 PMCID: PMC9204831 DOI: 10.1021/acsphotonics.2c00100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Indexed: 05/10/2023]
Abstract
Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs-1) light detection at low (<pJbit-1) power consumption, in devices compatible with Si processing, so that the monolithic integration of electro-optical materials and electronics can be achieved consistently at the wafer scale. Graphene-based photodetectors can meet these criteria, thanks to their broadband absorption, ultra-high mobility, ultra-fast electron interactions, and strong photothermoelectric effect. High responsivities (∼ 1 A/W), however, have only been demonstrated in biased configurations, which introduce dark current, noise, and power consumption, while unbiased schemes, with low noise and zero consumption, have remained in the ∼ 0.1 A/W regime. Here, we consider the unbiased asymmetric configuration and show that optimized plasmonic enhanced devices can reach for both transverse-electric and transverse-magnetic modes (at λ = 1550 nm), ∼A/W responsivity, and ∼ 100 GHz operation speed at zero power consumption. We validate the model and material parameters by simulating experimental devices and derive analytical expressions for the responsivity. Our comprehensive modeling paves the way for efficient, fast, and versatile optical detection in PICs with zero power consumption.
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Affiliation(s)
- Ioannis Vangelidis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
| | - Dimitris V. Bellas
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Strasse 25, Aachen 52074, Germany
| | - George Dabos
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Sebastián Castilla
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Frank H. L. Koppens
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA
- Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Nikos Pleros
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Elefterios Lidorikis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- University
Research Center of Ioannina (URCI), Institute of Materials Science
and Computing, Ioannina 45110, Greece
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20
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Okda HA, Rabia SI, Shalaby HMH. Performance enhancement of an ultrafast graphene photodetector via simultaneous two-mode absorption in a hybrid plasmonic waveguide. APPLIED OPTICS 2022; 61:3165-3173. [PMID: 35471294 DOI: 10.1364/ao.454607] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Accepted: 03/13/2022] [Indexed: 06/14/2023]
Abstract
An ultrafast, compact, zero-biased, and complementary metal-oxide semiconductor-compatible graphene photodetector (PD) based on a silicon-on-insulator hybrid plasmonic waveguide (HPWG) is proposed. Lumerical MODE solver is employed to investigate the modal characteristics of TM-polarized modes in the HPWG composing the PD. It is shown that the input light can be completely coupled into the photonic-like and plasmonic-like fundamental TM modes at the PD section. These two modes are exploited together in the photodetection process to enhance the PD performance. A rigorous analysis is performed in order to extract the optoelectronic characteristics of the single-layer graphene (SLG) used in the proposed structure. Lumerical 3D-FDTD solver is then employed to quantify the light interaction of the two aforementioned optical modes with the SLG. With a proper design at a wavelength of 1550 nm, the PD voltage responsivity reaches 2.8 V/W, and the photocurrent responsivity is obtained as 18.5 mA/W, while the corresponding absorption length is kept below 8µm and the noise equivalent power is limited to 3.7pW/Hz. Moreover, as the PD operates under zero bias, its photoresponse is predominated by the photothermoelectric mechanism, exhibiting a bandwidth that exceeds 180 GHz while avoiding the dark current.
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21
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Nematpour A, Grilli ML, Lancellotti L, Lisi N. Towards Perfect Absorption of Single Layer CVD Graphene in an Optical Resonant Cavity: Challenges and Experimental Achievements. MATERIALS (BASEL, SWITZERLAND) 2022; 15:352. [PMID: 35009498 PMCID: PMC8745855 DOI: 10.3390/ma15010352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2021] [Revised: 12/22/2021] [Accepted: 12/28/2021] [Indexed: 12/13/2022]
Abstract
Graphene is emerging as a promising material for the integration in the most common Si platform, capable to convey some of its unique properties to fabricate novel photonic and optoelectronic devices. For many real functions and devices however, graphene absorption is too low and must be enhanced. Among strategies, the use of an optical resonant cavity was recently proposed, and graphene absorption enhancement was demonstrated, both, by theoretical and experimental studies. This paper summarizes our recent progress in graphene absorption enhancement by means of Si/SiO2-based Fabry-Perot filters fabricated by radiofrequency sputtering. Simulations and experimental achievements carried out during more than two years of investigations are reported here, detailing the technical expedients that were necessary to increase the single layer CVD graphene absorption first to 39% and then up to 84%. Graphene absorption increased when an asymmetric Fabry-Perot filter was applied rather than a symmetric one, and a further absorption increase was obtained when graphene was embedded in a reflective rather than a transmissive Fabry-Perot filter. Moreover, the effect of the incident angle of the electromagnetic radiation and of the polarization of the light was investigated in the case of the optimized reflective Fabry-Perot filter. Experimental challenges and precautions to avoid evaporation or sputtering induced damage on the graphene layers are described as well, disclosing some experimental procedures that may help other researchers to embed graphene inside PVD grown materials with minimal alterations.
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Affiliation(s)
- Abedin Nematpour
- Energy Technologies and Renewable Sources Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Casaccia Research Centre, Via Anguillarese 301, 00123 Roma, Italy; (A.N.); (N.L.)
| | - Maria Luisa Grilli
- Energy Technologies and Renewable Sources Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Casaccia Research Centre, Via Anguillarese 301, 00123 Roma, Italy; (A.N.); (N.L.)
| | - Laura Lancellotti
- Energy Technologies and Renewable Sources Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Centre, P.le E. Fermi 1, 80055 Portici, Italy;
| | - Nicola Lisi
- Energy Technologies and Renewable Sources Department, Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Casaccia Research Centre, Via Anguillarese 301, 00123 Roma, Italy; (A.N.); (N.L.)
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22
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Ultrahigh-speed graphene-based optical coherent receiver. Nat Commun 2021; 12:5076. [PMID: 34417461 PMCID: PMC8379243 DOI: 10.1038/s41467-021-25374-0] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2021] [Accepted: 07/26/2021] [Indexed: 11/08/2022] Open
Abstract
Graphene-based photodetectors have attracted significant attention for high-speed optical communication due to their large bandwidth, compact footprint, and compatibility with silicon-based photonics platform. Large-bandwidth silicon-based optical coherent receivers are crucial elements for large-capacity optical communication networks with advanced modulation formats. Here, we propose and experimentally demonstrate an integrated optical coherent receiver based on a 90-degree optical hybrid and graphene-on-plasmonic slot waveguide photodetectors, featuring a compact footprint and a large bandwidth far exceeding 67 GHz. Combined with the balanced detection, 90 Gbit/s binary phase-shift keying signal is received with a promoted signal-to-noise ratio. Moreover, receptions of 200 Gbit/s quadrature phase-shift keying and 240 Gbit/s 16 quadrature amplitude modulation signals on a single-polarization carrier are realized with a low additional power consumption below 14 fJ/bit. This graphene-based optical coherent receiver will promise potential applications in 400-Gigabit Ethernet and 800-Gigabit Ethernet technology, paving another route for future high-speed coherent optical communication networks.
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23
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Pogna EA, Jia X, Principi A, Block A, Banszerus L, Zhang J, Liu X, Sohier T, Forti S, Soundarapandian K, Terrés B, Mehew JD, Trovatello C, Coletti C, Koppens FHL, Bonn M, Wang HI, van Hulst N, Verstraete MJ, Peng H, Liu Z, Stampfer C, Cerullo G, Tielrooij KJ. Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons. ACS NANO 2021; 15:11285-11295. [PMID: 34139125 PMCID: PMC8320233 DOI: 10.1021/acsnano.0c10864] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand the relaxation dynamics after photoexcitation. These dynamics contain a sub-100 fs thermalization phase, which occurs through carrier-carrier scattering and leads to a carrier distribution with an elevated temperature. This is followed by a picosecond cooling phase, where different phonon systems play a role: graphene acoustic and optical phonons, and substrate phonons. Here, we address the cooling pathway of two technologically relevant systems, both consisting of high-quality graphene with a mobility >10 000 cm2 V-1 s-1 and environments that do not efficiently take up electronic heat from graphene: WSe2-encapsulated graphene and suspended graphene. We study the cooling dynamics using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to substrate phonons is relatively inefficient in these systems, suggesting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a time scale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the high-energy tail of the hot-carrier distribution emit optical phonons. This creates a permanent heat sink, as carriers efficiently rethermalize. We develop a macroscopic model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights will guide the development of graphene-based optoelectronic devices.
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Affiliation(s)
- Eva A.
A. Pogna
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, 56127 Pisa, Italy
- Department
of Physics, Politecnico di Milano, 20133 Milan, Italy
| | - Xiaoyu Jia
- Max-Planck-Institut
für Polymerforschung, 55128 Mainz, Germany
| | - Alessandro Principi
- School
of Physics and Astronomy, University of
Manchester, M13 9PL Manchester, U.K.
| | - Alexander Block
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Luca Banszerus
- JARA-FIT
and second Institute of Physics, RWTH Aachen
University, 52074 Aachen, Germany, EU
| | - Jincan Zhang
- Center for
Nanochemistry, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing
Graphene Institute, Beijing 100095, P. R. China
| | - Xiaoting Liu
- Center for
Nanochemistry, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing
Graphene Institute, Beijing 100095, P. R. China
| | - Thibault Sohier
- NanoMat/Q-Mat/CESAM, Université
de Liège (B5), B-4000 Liège, Belgium
| | - Stiven Forti
- Center
for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
| | | | - Bernat Terrés
- ICFO - Institut de Ciències Fotòniques, BIST, Castelldefels, Barcelona 08860, Spain
| | - Jake D. Mehew
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | | | - Camilla Coletti
- Center
for Nanotechnology Innovation IIT@NEST, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene Laboratories, Via Morego 30, 16163 Genova, Italy
| | - Frank H. L. Koppens
- ICFO - Institut de Ciències Fotòniques, BIST, Castelldefels, Barcelona 08860, Spain
- ICREA - Institució Catalana de Reçerca i Estudis Avancats, 08010 Barcelona, Spain
| | - Mischa Bonn
- Max-Planck-Institut
für Polymerforschung, 55128 Mainz, Germany
| | - Hai I. Wang
- Max-Planck-Institut
für Polymerforschung, 55128 Mainz, Germany
| | - Niek van Hulst
- ICFO - Institut de Ciències Fotòniques, BIST, Castelldefels, Barcelona 08860, Spain
- ICREA - Institució Catalana de Reçerca i Estudis Avancats, 08010 Barcelona, Spain
| | | | - Hailin Peng
- Center for
Nanochemistry, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing
Graphene Institute, Beijing 100095, P. R. China
| | - Zhongfan Liu
- Center for
Nanochemistry, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing
Graphene Institute, Beijing 100095, P. R. China
| | - Christoph Stampfer
- JARA-FIT
and second Institute of Physics, RWTH Aachen
University, 52074 Aachen, Germany, EU
| | - Giulio Cerullo
- Department
of Physics, Politecnico di Milano, 20133 Milan, Italy
| | - Klaas-Jan Tielrooij
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
- E-mail:
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24
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Ma Y, Chang Y, Dong B, Wei J, Liu W, Lee C. Heterogeneously Integrated Graphene/Silicon/Halide Waveguide Photodetectors toward Chip-Scale Zero-Bias Long-Wave Infrared Spectroscopic Sensing. ACS NANO 2021; 15:10084-10094. [PMID: 34060811 DOI: 10.1021/acsnano.1c01859] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Mid-infrared absorption spectroscopy plays an important role in molecule identification and quantification for widespread applications. Integrated photonics provides opportunities to perform spectroscopic sensing on-chip for the minimization of device size, cost, and power consumption. The integration of waveguides and photodetectors is an indispensable step toward the realization of these on-chip sensing systems. It is desired to extend the operating wavelengths of these on-chip sensing systems to the long-wave infrared (LWIR) range to utilize more molecular absorption fingerprints. However, the development of LWIR waveguide-integrated photodetectors faces challenges from both waveguide platforms due to the bottom cladding material absorption and photodetection technologies due to the low LWIR photon energy. Here, we demonstrate LWIR waveguide-integrated photodetectors through heterogeneous integration of graphene photodetectors and Si waveguides on CaF2 substrates. A high-yield transfer printing method is developed for flexibly integrating the waveguide and substrate materials to solve the bottom cladding material absorption issue. The fabricated Si-on-CaF2 waveguides show low losses in the broad LWIR wavelength range of 6.3-7.1 μm. The graphene photodetector achieves a broadband responsivity of ∼8 mA/W in these low-photon-energy LWIR wavelengths under zero-bias operation with the help of waveguide integration and plasmonic enhancement. We further integrate the graphene photodetector with a Si-on-CaF2 folded waveguide and demonstrate on-chip absorption sensing using toluene as an example. These results reveal the potential of our technology for the realization of chip-scale, low-cost, and low-power-consumption LWIR spectroscopic sensing systems.
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Affiliation(s)
- Yiming Ma
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Yuhua Chang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Weixin Liu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, Singapore 117608
- NUS Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
- NUS Graduate School - Integrative Sciences and Engineering Programme (ISEP), National University of Singapore, Singapore 119077
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25
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Schuler S, Muench JE, Ruocco A, Balci O, Thourhout DV, Sorianello V, Romagnoli M, Watanabe K, Taniguchi T, Goykhman I, Ferrari AC, Mueller T. High-responsivity graphene photodetectors integrated on silicon microring resonators. Nat Commun 2021; 12:3733. [PMID: 34145226 PMCID: PMC8213857 DOI: 10.1038/s41467-021-23436-x] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 04/14/2021] [Indexed: 02/05/2023] Open
Abstract
Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the current GPDs' low responsivity when compared to conventional PDs. Here we overcome this by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve >90% light absorption in a ~6 μm SLG channel along a Si waveguide. Cavity-enhanced light-matter interactions cause carriers in SLG to reach ~400 K for an input power ~0.6 mW, resulting in a voltage responsivity ~90 V/W, with a receiver sensitivity enabling our GPDs to operate at a 10-9 bit-error rate, on par with mature semiconductor technology, but with a natural generation of a voltage, rather than a current, thus removing the need for transimpedance amplification, with a reduction of energy-per-bit, cost, and foot-print.
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Affiliation(s)
- S Schuler
- Vienna University of Technology, Institute of Photonics, Vienna, Austria
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - J E Muench
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - A Ruocco
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - O Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - D van Thourhout
- Ghent University-IMEC, Photonics Research Group, Gent, Belgium
| | - V Sorianello
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - M Romagnoli
- Consorzio Nazionale per le Telecomunicazioni and Inphotec, Pisa, Italy
| | - K Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Materials Science, Tsukuba, Japan
| | - I Goykhman
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Technion-Israel Institute of Technology, Haifa, Israel
| | - A C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
| | - T Mueller
- Vienna University of Technology, Institute of Photonics, Vienna, Austria.
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26
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James Singh K, Ahmed T, Gautam P, Sadhu AS, Lien DH, Chen SC, Chueh YL, Kuo HC. Recent Advances in Two-Dimensional Quantum Dots and Their Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1549. [PMID: 34208236 PMCID: PMC8230759 DOI: 10.3390/nano11061549] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2021] [Revised: 06/08/2021] [Accepted: 06/09/2021] [Indexed: 01/28/2023]
Abstract
Two-dimensional quantum dots have received a lot of attention in recent years due to their fascinating properties and widespread applications in sensors, batteries, white light-emitting diodes, photodetectors, phototransistors, etc. Atomically thin two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have sparked researchers' interest with their unique optical and electronic properties, such as a tunable energy bandgap, efficient electronic transport, and semiconducting characteristics. In this review, we provide in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications. This analysis will serve as a tipping point for learning about the recent breakthroughs in two-dimensional quantum dots and motivate more scientists and engineers to grasp two-dimensional quantum dots materials by incorporating them into a variety of electrical and optical fields.
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Affiliation(s)
- Konthoujam James Singh
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
| | - Tanveer Ahmed
- Department of Electrical Engineering and Computer Science, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (T.A.); (D.-H.L.)
| | - Prakalp Gautam
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
| | - Annada Sankar Sadhu
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
| | - Der-Hsien Lien
- Department of Electrical Engineering and Computer Science, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (T.A.); (D.-H.L.)
| | - Shih-Chen Chen
- Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
| | - Hao-Chung Kuo
- Department of Photonics & Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan; (K.J.S.); (A.S.S.)
- Semiconductor Research Center, Hon Hai Research Institute, Taipei 11492, Taiwan
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27
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Liu C, Guo J, Yu L, Li J, Zhang M, Li H, Shi Y, Dai D. Silicon/2D-material photodetectors: from near-infrared to mid-infrared. LIGHT, SCIENCE & APPLICATIONS 2021; 10:123. [PMID: 34108443 PMCID: PMC8190178 DOI: 10.1038/s41377-021-00551-4] [Citation(s) in RCA: 52] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 04/21/2021] [Accepted: 05/06/2021] [Indexed: 05/06/2023]
Abstract
Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.
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Affiliation(s)
- Chaoyue Liu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jingshu Guo
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Laiwen Yu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jiang Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Ming Zhang
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Huan Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Yaocheng Shi
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Daoxin Dai
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China.
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China.
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28
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Massicotte M, Soavi G, Principi A, Tielrooij KJ. Hot carriers in graphene - fundamentals and applications. NANOSCALE 2021; 13:8376-8411. [PMID: 33913956 PMCID: PMC8118204 DOI: 10.1039/d0nr09166a] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Accepted: 03/30/2021] [Indexed: 05/15/2023]
Abstract
Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.
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Affiliation(s)
- Mathieu Massicotte
- Institut Quantique and Département de Physique, Université de SherbrookeSherbrookeQuébecCanada
| | - Giancarlo Soavi
- Institute of Solid State Physics, Friedrich Schiller University Jena07743 JenaGermany
- Abbe Center of Photonics, Friedrich Schiller University Jena07745 JenaGermany
| | | | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST & CSIC, Campus UAB08193BellaterraBarcelonaSpain
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29
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Martini F, Cibella S, Gaggero A, Mattioli F, Leoni R. Waveguide integrated hot electron bolometer for classical and quantum photonics. OPTICS EXPRESS 2021; 29:7956-7965. [PMID: 33820252 DOI: 10.1364/oe.410317] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Accepted: 12/21/2020] [Indexed: 06/12/2023]
Abstract
The development of performant integrated detectors, which are sensitive to quantum fluctuations of coherent light, are strongly desired to realize a scalable and determinist photonic quantum processor based on continuous variables states of light. Here, we investigate the performance of hot electron bolometers (HEBs) fabricated on top of a silicon-on-insulator (SOI) photonic circuit showing responsivities up to 8600 V/W and a record noise equivalent temperature of 1.1 dB above the quantum limit. Thanks to a detailed analysis of the noise sources of the waveguide integrated HEB, we estimate 14.8 dBV clearance between the shot noise and electrical noise with just 1.1µW of local oscillator power. The full technology compatibility with superconducting nanowire single photon detectors (SNSPDs) opens the possibility of nonclassical state engineering and state tomography performed within the same platform, enabling a new class of optical quantum processors.
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30
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Giambra M, Mišeikis V, Pezzini S, Marconi S, Montanaro A, Fabbri F, Sorianello V, Ferrari AC, Coletti C, Romagnoli M. Wafer-Scale Integration of Graphene-Based Photonic Devices. ACS NANO 2021; 15:3171-3187. [PMID: 33522789 PMCID: PMC7905876 DOI: 10.1021/acsnano.0c09758] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2020] [Accepted: 01/21/2021] [Indexed: 05/13/2023]
Abstract
Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (≥5000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapor deposition (CVD) of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ∼80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ∼5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ∼0.25, 0.45, 0.75, 1 dB V-1 for device lengths ∼30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hexagonal boron nitride (hBN) is used to protect SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. The processes are compatible with full automation. This paves the way for large scale production of graphene-based photonic devices.
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Affiliation(s)
- Marco
A. Giambra
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- INPHOTEC, Via G. Moruzzi 1, 56124 Pisa, Italy
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- NEST,
Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Simone Marconi
- Photonic
Networks and Technologies Lab, Tecip Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- NEST,
Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Vito Sorianello
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, Cambridge University, 9 J.J. Thompson, Cambridge, U.K.
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- INPHOTEC, Via G. Moruzzi 1, 56124 Pisa, Italy
- CamGraPhiC, Via Moruzzi 1, 56124 Pisa, Italy
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31
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Wu J, Ma H, Yin P, Ge Y, Zhang Y, Li L, Zhang H, Lin H. Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202000053] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Jianghong Wu
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Hui Ma
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
| | - Peng Yin
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yanqi Ge
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China
- Institute of Advanced Technology Westlake Institute for Advanced Study 18 Shilongshan Road Hangzhou 310024 China
| | - Han Zhang
- Institute of Microscale Optoelectronics Collaborative Innovation Centre for Optoelectronic Science & Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology Guangdong Laboratory of Artificial
| | - Hongtao Lin
- Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang College of Information Science & Electronic Engineering Zhejiang University Hangzhou 310027 China
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32
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Marconi S, Giambra MA, Montanaro A, Mišeikis V, Soresi S, Tirelli S, Galli P, Buchali F, Templ W, Coletti C, Sorianello V, Romagnoli M. Photo thermal effect graphene detector featuring 105 Gbit s -1 NRZ and 120 Gbit s -1 PAM4 direct detection. Nat Commun 2021; 12:806. [PMID: 33547318 PMCID: PMC7864989 DOI: 10.1038/s41467-021-21137-z] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Accepted: 01/13/2021] [Indexed: 01/30/2023] Open
Abstract
One of the main challenges of next generation optical communication is to increase the available bandwidth while reducing the size, cost and power consumption of photonic integrated circuits. Graphene has been recently proposed to be integrated with silicon photonics to meet these goals because of its high mobility, fast carrier dynamics and ultra-broadband optical properties. We focus on graphene photodetectors for high speed datacom and telecom applications based on the photo-thermo-electric effect, allowing for direct optical power to voltage conversion, zero dark current, and ultra-fast operation. We report on a chemical vapour deposition graphene photodetector based on the photo-thermoelectric effect, integrated on a silicon waveguide, providing frequency response >65 GHz and optimized to be interfaced to a 50 Ω voltage amplifier for direct voltage amplification. We demonstrate a system test leading to direct detection of 105 Gbit s-1 non-return to zero and 120 Gbit s-1 4-level pulse amplitude modulation optical signals.
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Affiliation(s)
- S. Marconi
- grid.263145.70000 0004 1762 600XTecip Institute – Scuola Superiore Sant’Anna, Pisa, Italy
| | - M. A. Giambra
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - A. Montanaro
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - V. Mišeikis
- grid.25786.3e0000 0004 1764 2907Center for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Pisa, Italy ,grid.25786.3e0000 0004 1764 2907Graphene Labs, Istituto Italiano di Tecnologia, Genova, Italy
| | - S. Soresi
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy ,Fondazione INPHOTEC, Pisa, Italy
| | - S. Tirelli
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy ,Fondazione INPHOTEC, Pisa, Italy
| | - P. Galli
- Nokia Solutions and Networks Italia, Vimercate, Italy
| | - F. Buchali
- grid.425792.fNokia Bell Labs, Stuttgart, Germany
| | - W. Templ
- grid.425792.fNokia Bell Labs, Stuttgart, Germany
| | - C. Coletti
- grid.25786.3e0000 0004 1764 2907Center for Nanotechnology Innovation @NEST - Istituto Italiano di Tecnologia, Pisa, Italy ,grid.25786.3e0000 0004 1764 2907Graphene Labs, Istituto Italiano di Tecnologia, Genova, Italy
| | - V. Sorianello
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
| | - M. Romagnoli
- Photonic Networks and Technologies Lab – CNIT, Pisa, Italy
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33
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Lin CCC, Chang PH, Helmy AS. Supermode Hybridization: A Material-Independent Route toward Record Schottky Detection Sensitivity Using <0.05 μm 3 Amorphous Absorber Volume. NANO LETTERS 2020; 20:8500-8507. [PMID: 33231473 DOI: 10.1021/acs.nanolett.0c02831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the inability to simultaneously optimize the metal emitter thickness for photon absorption and hot carrier emission limits the detection efficiency and sensitivity. Here, we propose and experimentally demonstrate a supermode hybridization waveguiding effect that can overcome the trade-off. By introducing structural asymmetry into coupled plasmonic nanostructures, hybridization-induced field enhancement can help ultrathin metal emitters to achieve greater optical absorption than bulk counterparts. Despite the use of amorphous materials with higher transport losses, our hybridized Schottky detectors demonstrate higher responsivity per device volume compared to crystalline-based and unhybridized Schottky designs with broadband (1.5-1.6 μm) and athermal (15-100 °C) behavior as well as record sensitivity of -55 dBm that approaches Ge counterparts that are 36 times larger. The hybridization effect can be utilized across diverse nanomaterial platforms to facilitate light-matter interaction, paving the way toward backend-compatible, chip-integrated photonics with greater manufacturing flexibility.
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Affiliation(s)
- Charles Chih-Chin Lin
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Po-Han Chang
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Amr S Helmy
- The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
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34
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Park GC, Park K. Dual-guiding-layer resonance structure with an embedded metasurface for quasi-critical coupling without a perfect mirror. Sci Rep 2020; 10:16014. [PMID: 32994499 PMCID: PMC7524763 DOI: 10.1038/s41598-020-72983-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 09/09/2020] [Indexed: 11/09/2022] Open
Abstract
We propose an all-dielectric quasi-one-port resonance structure that achieves near perfect absorption without the use of a back mirror. The structure mainly consists of a high-refractive-index silicon metasurface and surrounding high-refractive-index guiding layers. The dual-guiding-layer (DGL) structure has high background reflectance and is designed to have a ratio of two decay rates into the upper and lower regions within a wider range. When an absorbing material is introduced into a DGL system, it can be designed to achieve a near critical-coupling condition by reducing the constraints in the two decay rates. By using single-layer graphene as an absorbing material, the DGL resonance structure shows an absorption of ~ 97% and a phase change of ∼ 0.95π near the wavelength of 1550 nm, confirming quasi-critical coupling. The optimized DGL structure is relatively insensitive to potential fabrication imperfections, and consequently, the expected average peak wavelength and absorption are obtained as 1549.29 nm and 96.74%, respectively. Angle-dependent absorption confirms that maximum absorption occurs under normal incidence. The DGL absorber is also designed to cover the whole C-band region, in order to meet the quasi-critical-coupling condition. All mode profiles are similarly quasi-symmetric along the metasurface due to the same DGL resonance mechanism.
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Affiliation(s)
- Gyeong Cheol Park
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, 2800, Kgs. Lyngby, Denmark. .,Electronics and Telecommunications Research Institute, Daejeon, 34129, Republic of Korea.
| | - Kwangwook Park
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, 54896, Republic of Korea. .,Hydrogen and Fuel Cell Research Center, Jeonbuk National University, Jeonju, 54896, Republic of Korea.
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35
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Castilla S, Vangelidis I, Pusapati VV, Goldstein J, Autore M, Slipchenko T, Rajendran K, Kim S, Watanabe K, Taniguchi T, Martín-Moreno L, Englund D, Tielrooij KJ, Hillenbrand R, Lidorikis E, Koppens FHL. Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene. Nat Commun 2020; 11:4872. [PMID: 32978380 PMCID: PMC7519130 DOI: 10.1038/s41467-020-18544-z] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2020] [Accepted: 08/24/2020] [Indexed: 11/09/2022] Open
Abstract
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW[Formula: see text]) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows very good quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.
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Affiliation(s)
- Sebastián Castilla
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Ioannis Vangelidis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece
| | - Varun-Varma Pusapati
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Jordan Goldstein
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Marta Autore
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Spain
| | - Tetiana Slipchenko
- Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Khannan Rajendran
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Seyoon Kim
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Material Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Material Science, Tsukuba, 305-0044, Japan
| | - Luis Martín-Moreno
- Instituto de Ciencia de Materiales de Aragón and Departamento de Física de la Materia Condensada, CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Dirk Englund
- Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Rainer Hillenbrand
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48013, Spain.,CIC nanoGUNE BRTA and Department of Electricity and Electronics, UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | - Elefterios Lidorikis
- Department of Materials Science and Engineering, University of Ioannina, Ioannina, 45110, Greece. .,University Research Center of Ioannina (URCI), Institute of Materials Science and Computing, Ioannina, 45110, Greece.
| | - Frank H L Koppens
- ICFO - Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, 08860, Spain. .,ICREA - Institució Catalana de Recerca i Estudis Avançats, Barcelona, 08010, Spain.
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36
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Han J, He M, Yang M, Han Q, Wang F, Zhong F, Xu M, Li Q, Zhu H, Shan C, Hu W, Chen X, Wang X, Gou J, Wu Z, Wang J. Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents. LIGHT, SCIENCE & APPLICATIONS 2020; 9:167. [PMID: 33042530 PMCID: PMC7509774 DOI: 10.1038/s41377-020-00406-4] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2020] [Revised: 08/31/2020] [Accepted: 09/01/2020] [Indexed: 06/11/2023]
Abstract
The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate a graphene/C60/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent, remarkable logical photocurrent switching under infrared light modulation occurs in a thick C60 layer (11 nm) device, which implies competition of the photogenerated carriers between graphene/C60 and C60/pentacene. Meanwhile, we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore, infrared light modulation of a thin C60 (5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W, and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C60 devices. In addition, the tuneable bandwidth of the infrared response from 10 to 3 × 103 Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.
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Affiliation(s)
- Jiayue Han
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Meiyu He
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Ming Yang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Qi Han
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai, 200083 China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai, 200083 China
| | - Mengjian Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai, 200083 China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024 China
| | - He Zhu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024 China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001 China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yutian Road, Shanghai, 200083 China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024 China
| | - Xiaoqing Chen
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China
| | - Jun Gou
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Zhiming Wu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054 China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054 China
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37
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Mišeikis V, Marconi S, Giambra MA, Montanaro A, Martini L, Fabbri F, Pezzini S, Piccinini G, Forti S, Terrés B, Goykhman I, Hamidouche L, Legagneux P, Sorianello V, Ferrari AC, Koppens FHL, Romagnoli M, Coletti C. Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides. ACS NANO 2020; 14:11190-11204. [PMID: 32790351 PMCID: PMC7513472 DOI: 10.1021/acsnano.0c02738] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 1010 cm-2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
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Affiliation(s)
- Vaidotas Mišeikis
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Simone Marconi
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Marco A. Giambra
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
- TeCIP
Institute, Scuola Superiore Sant’Anna, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Alberto Montanaro
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Filippo Fabbri
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Sergio Pezzini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Giulia Piccinini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Bernat Terrés
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
| | - Ilya Goykhman
- Technion
- Israel Institute of Technology, Technion City, 3200003 Haifa, Israel
| | - Louiza Hamidouche
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Pierre Legagneux
- Thales
Research and Technology, 1, Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Vito Sorianello
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, Cambridge University, 9 J.J. Thompson Avenue, Cambridge CB3 OFA, United Kingdom
| | - Frank H. L. Koppens
- ICFO
- Institut
de Ciencies Fotoniques, the Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss 3, 08860 Castelldefels, Spain
- ICREA,
Institució Catalana de Recerça i Estudis Avancats, Barcelona 08010, Spain
| | - Marco Romagnoli
- Photonic
Networks and Technologies Lab, CNIT, Via G. Moruzzi 1, 56124 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
- Graphene
Labs, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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38
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Ogawa S, Fukushima S, Shimatani M. Graphene Plasmonics in Sensor Applications: A Review. SENSORS 2020; 20:s20123563. [PMID: 32586048 PMCID: PMC7349696 DOI: 10.3390/s20123563] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Revised: 06/17/2020] [Accepted: 06/19/2020] [Indexed: 12/12/2022]
Abstract
Surface plasmon polaritons (SPPs) can be generated in graphene at frequencies in the mid-infrared to terahertz range, which is not possible using conventional plasmonic materials such as noble metals. Moreover, the lifetime and confinement volume of such SPPs are much longer and smaller, respectively, than those in metals. For these reasons, graphene plasmonics has potential applications in novel plasmonic sensors and various concepts have been proposed. This review paper examines the potential of such graphene plasmonics with regard to the development of novel high-performance sensors. The theoretical background is summarized and the intrinsic nature of graphene plasmons, interactions between graphene and SPPs induced by metallic nanostructures and the electrical control of SPPs by adjusting the Fermi level of graphene are discussed. Subsequently, the development of optical sensors, biological sensors and important components such as absorbers/emitters and reconfigurable optical mirrors for use in new sensor systems are reviewed. Finally, future challenges related to the fabrication of graphene-based devices as well as various advanced optical devices incorporating other two-dimensional materials are examined. This review is intended to assist researchers in both industry and academia in the design and development of novel sensors based on graphene plasmonics.
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39
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Gosciniak J, Khurgin JB. On-Chip Ultrafast Plasmonic Graphene Hot Electron Bolometric Photodetector. ACS OMEGA 2020; 5:14711-14719. [PMID: 32596608 PMCID: PMC7315610 DOI: 10.1021/acsomega.0c01308] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Accepted: 06/01/2020] [Indexed: 06/11/2023]
Abstract
We investigate a waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of A/W and high speed on the scale of 100's of GHz that is limited only by the product of the electronic heat capacitance and thermal resistance. We develop a theory of the bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to the bolometric effect, which is shown to significantly surpass the responsivity of the coexisting photoconductive effect, thus convincingly demonstrating the dominance of the bolometric effect. Based on the theory, we propose a novel detector configuration based on a hybrid waveguide that allows for efficient absorption in graphene over a short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high-speed communication systems.
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Affiliation(s)
- Jacek Gosciniak
- New York University
Abu Dhabi, Saadiyat Island, P.O. Box 129188, Abu Dhabi 307501, UAE
| | - Jacob B. Khurgin
- John Hopkins University, Baltimore, Maryland 21218, United States
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40
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F. Carvalho WO, Mejía-Salazar JR. Plasmonics for Telecommunications Applications. SENSORS (BASEL, SWITZERLAND) 2020; 20:s20092488. [PMID: 32354016 PMCID: PMC7250033 DOI: 10.3390/s20092488] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2020] [Revised: 04/17/2020] [Accepted: 04/20/2020] [Indexed: 05/08/2023]
Abstract
Plasmonic materials, when properly illuminated with visible or near-infrared wavelengths, exhibit unique and interesting features that can be exploited for tailoring and tuning the light radiation and propagation properties at nanoscale dimensions. A variety of plasmonic heterostructures have been demonstrated for optical-signal filtering, transmission, detection, transportation, and modulation. In this review, state-of-the-art plasmonic structures used for telecommunications applications are summarized. In doing so, we discuss their distinctive roles on multiple approaches including beam steering, guiding, filtering, modulation, switching, and detection, which are all of prime importance for the development of the sixth generation (6G) cellular networks.
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41
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Yurgens A. Large Responsivity of Graphene Radiation Detectors With Thermoelectric Readout: Results of Simulations. SENSORS 2020; 20:s20071930. [PMID: 32235646 PMCID: PMC7180745 DOI: 10.3390/s20071930] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/13/2020] [Revised: 03/18/2020] [Accepted: 03/27/2020] [Indexed: 11/25/2022]
Abstract
Simple estimations show that the thermoelectric readout in graphene radiation detectors can be extremely effective even for graphene with modest charge-carrier mobility ∼1000 cm2/(Vs). The detector responsivity depends mostly on the residual charge-carrier density and split-gate spacing and can reach competitive values of ∼103–104 V/W at room temperature. The optimum characteristics depend on a trade-off between the responsivity and the total device resistance. Finding out the key parameters and their roles allows for simple detectors and their arrays, with high responsivity and sufficiently low resistance matching that of the radiation-receiving antenna structures.
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Affiliation(s)
- August Yurgens
- Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
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Guo J, Li J, Liu C, Yin Y, Wang W, Ni Z, Fu Z, Yu H, Xu Y, Shi Y, Ma Y, Gao S, Tong L, Dai D. High-performance silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm. LIGHT, SCIENCE & APPLICATIONS 2020; 9:29. [PMID: 32140220 PMCID: PMC7048841 DOI: 10.1038/s41377-020-0263-6] [Citation(s) in RCA: 53] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2019] [Revised: 01/26/2020] [Accepted: 02/14/2020] [Indexed: 05/06/2023]
Abstract
Graphene has attracted much attention for the realization of high-speed photodetection for silicon photonics over a wide wavelength range. However, the reported fast graphene photodetectors mainly operate in the 1.55 μm wavelength band. In this work, we propose and realize high-performance waveguide photodetectors based on bolometric/photoconductive effects by introducing an ultrathin wide silicon-graphene hybrid plasmonic waveguide, which enables efficient light absorption in graphene at 1.55 μm and beyond. When operating at 2 μm, the present photodetector has a responsivity of ~70 mA/W and a setup-limited 3 dB bandwidth of >20 GHz. When operating at 1.55 μm, the present photodetector also works very well with a broad 3 dB bandwidth of >40 GHz (setup-limited) and a high responsivity of ~0.4 A/W even with a low bias voltage of -0.3 V. This work paves the way for achieving high-responsivity and high-speed silicon-graphene waveguide photodetection in the near/mid-infrared ranges, which has applications in optical communications, nonlinear photonics, and on-chip sensing.
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Affiliation(s)
- Jingshu Guo
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Jiang Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Chaoyue Liu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Yanlong Yin
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Wenhui Wang
- Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, 211189 Nanjing, China
| | - Zhenhua Ni
- Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, 211189 Nanjing, China
| | - Zhilei Fu
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Hui Yu
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Yang Xu
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
- College of Information Science and Electronic Engineering, Zhejiang University, 310027 Hangzhou, Zhejiang China
| | - Yaocheng Shi
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Yungui Ma
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Shiming Gao
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
| | - Limin Tong
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
| | - Daoxin Dai
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, 310058 Hangzhou, China
- Ningbo Research Institute, Zhejiang University, 315100 Ningbo, China
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Li D, Gong Y, Chen Y, Lin J, Khan Q, Zhang Y, Li Y, Zhang H, Xie H. Recent Progress of Two-Dimensional Thermoelectric Materials. NANO-MICRO LETTERS 2020; 12:36. [PMID: 34138247 PMCID: PMC7770719 DOI: 10.1007/s40820-020-0374-x] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2019] [Accepted: 12/24/2019] [Indexed: 05/04/2023]
Abstract
Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA-VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.
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Affiliation(s)
- Delong Li
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Youning Gong
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Yuexing Chen
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Jiamei Lin
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Qasim Khan
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada
| | - Yupeng Zhang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
| | - Yu Li
- Shenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
| | - Han Zhang
- Collaborative Innovation Centre for Optoelectronic Science & Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
| | - Heping Xie
- Shenzhen Clean Energy Research Institute, Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
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