Screening and Design of Novel 2D Ferromagnetic Materials with High Curie Temperature above Room Temperature

Probing the Band Splitting near the Γ Point in the van der Waals Magnetic Semiconductor CrSBr

This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal splitting in both the conduction and valence bands but also highlight a significant advance in our understanding of the interplay between the optical, electronic, and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

A photochromic trinuclear dysprosium(iii) single-molecule magnet with two distinct relaxation processes

Multifunctional molecules responsive to light are highly desired as components for the construction of remotely controlled nanodevices. Here we present a DyIII single molecule magnet (SMM) comprising dithienylethene (dte) photochromic bridging ligands in the form of a pyridine (py) derivative: 1,2-bis((2-methyl-5-pyridyl)thie-3-yl)perfluorocyclo-pentene (dtepy). The title trinuclear compound {[DyIII(BHT)3]3(dtepy)2}·4C5H12 (1) was synthesized by combining the low-coordinate dysprosium complexes DyIII(BHT)3 (BHT = 2,6-di-tert-butyl-4-methylphenolate) with dtepy bridging ligands in the 'open' form using n-pentane as a completely inert solvent. The trinuclear molecule comprises two different DyIII centers due to its quasi-linear geometry: a central trigonal bipyramidal DyIII ion and two peripheral ones with an approximate trigonal pyramidal geometry. Thanks to that, 1 shows two types of SMM behavior which is slightly affected by the photoisomerization of the photochromic dtepy bridges. The impact of the photoisomerization on the magnetization dynamics was studied by means of alternating current (AC) magnetic susceptibility measurements for the 'open' and 'closed' forms of the molecules. The changes between the 'open' and 'closed' isomers were further investigated by IR and UV-vis spectroscopy, suggesting the co-existence of the ligand-related photochromism and single-molecule magnet behavior in 1. However, the powder X-ray diffraction studies indicate loss of structural order in the first photoisomerization step preventing in-depth studies.

Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement

Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.

Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping

Two-dimensional (2D) intrinsic van der Waals ferromagnetic semiconductor (FMS) crystals with strong perpendicular magnetic anisotropy and high Curie temperature (TC) are highly desirable and hold great promise for applications in ultrahigh-speed spintronic devices. Here, we systematically investigated the effects of a biaxial strain ranging between -8% and +8% and doping with different charge carrier concentrations (≤0.7 electrons/holes per unit cell) on the electronic structure, magnetic properties, and TC of monolayer CrSeBr by combining first-principles calculations and Monte Carlo (MC) simulations. Our results demonstrate that the pristine CrSeBr monolayer possesses an intrinsic FMS character with a band gap as large as 1.03 eV, an in-plane magnetic anisotropy of 0.131 meV per unit cell, and a TC as high as 164 K. At a biaxial strain of only 0.8% and a hole density of 5.31 × 1013 cm-2, the easy magnetization axis direction transitions from in-plane to out-of-plane. More interestingly, the magnetic anisotropy energy and TC of monolayer CrSeBr are further enhanced to 1.882 meV per unit cell and 279 K, respectively, under application of a tensile biaxial strain of 8%, and the monolayer retains its semiconducting properties throughout the entire range of investigated strains. It was also found that upon doping monolayer CrSeBr with holes with a concentration of 0.7 holes per unit cell, the perpendicular magnetic anisotropy and TC are increased to 0.756 meV per cell and 235 K, respectively, and the system tends to become metallic. These findings will help to advance the application of 2D intrinsic ferromagnetic materials in spintronic devices.

Intrinsic edge states and strain-tunable spin textures in the Janus 1T-VTeCl monolayer

Using first-principles calculations and micro-magnetic simulations, we investigate the electronic structures, the effect of biaxial strain on the topological characteristics, magnetic anisotropy energy (MAE), Dzyaloshinskii-Moriya interaction (DMI) and spin textures in the Janus 1T phase VTeCl (1T-VTeCl) monolayer. Our results show that 1T-VTeCl has an intrinsic edge state, and a topological phase transition with a sizeable band gap is achieved by applying biaxial strain. Interestingly, the MAE can be switched from the in-plane to the off-plane with a compressive strain of -5%. Microscopically, the origin of MAE is mainly associated with the large spin-orbit coupling (SOC) from the heavy nonmagnetic Te atoms rather than that from the V atoms. Furthermore, the induced DMI (0.09 meV) can occur stabilizing magnetic merons without applying temperatures and magnetic fields. Then, the skyrmions, frustrated antiferromagnetism and vortex are induced after applying a suitable compressive strain. Our study provides compelling evidence that the 1T-VTeCl monolayer with topological properties holds great potential for application in spintronic devices, as well as information storage devices based on different magnetic phases achievable through strain engineering.

Electronic structure and magnetothermal properties of two-dimensional ScCl

Two-dimensional ferromagnetic materials with intrinsic half-metallic properties have strong application advantages in nanoscale spintronics. Herein, density functional theory calculations show that monolayer ScCl is a ferromagnetic metallic material when undoped (n = 0), and the transition from metal to half-metal occurs with the continuous doping of holes. On the contrary, as the concentration of doped electrons increases, the system will exhibit metallic characteristics, which is particularly evident from a variation in spin polarizability. Furthermore, we have discussed how doped carriers affect the shape of the Fermi surface and the Fermi velocity of electrons. Most importantly, Monte Carlo simulations show that the ScCl monolayer is particularly regulated by carrier concentration (n) and magnetic field (h). Additionally, trends in energy and magnetic exchange coupling in different magnetic configurations (AFM phase and FM phase) with different doping concentrations are presented. When n < -0.16, the material is not only a half-metallic material that easily flips the magnetic axis, but also proves to be a candidate ferromagnetic material that works stably at room temperature in terms of dynamic stability. In addition, the origin of magnetocrystalline anisotropy is analyzed, and the contribution of different orbitals to spin-orbit coupling is presented. Moreover, we note that when magnetic field is small (h < 1 T), the change in size has a significant effect on ferromagnetic phase transition. However, when the system size is large (size >15 nm), TC is less sensitive to magnetic field. In addition, hole doping and size effect will greatly affect the hC of the system, but when the hole doping exceeds the critical value (n = -0.16), its influence on the hysteresis loop is no longer obvious. These interesting magnetic phenomena and easily adjustable physical properties show us that monolayer ScCl will be a promising functional material.

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling among its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (∼14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provide insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

Establishing theoretical landscapes for identifying basal plane active sites in MBene toward multifunctional HER, OER, and ORR catalysts

Exploring multifunctional electrocatalysts to realize efficient hydrogen evolution reaction (HER), oxygen evolution reaction (OER), and oxygen reduction reaction (ORR) is urgently desired for developing novel renewable energy storage and conversion technologies. However, integrating these three merits in one single catalyst remains a big challenge due to the difficulty in balancing the adsorption strengths of multiple reaction intermediates. Herein, through first-principles calculations, we systematically investigated the electrocatalytic activity of M2B2, M3B4, and M4B6 type MBenes (M = Cr, Mn, Fe, Co, and Ni) for multifunctional HER, OER, and ORR. The results indicate that most of the investigated MBenes show outstanding catalytic activity for HER with hydrogen adsorption Gibbs free energy close to the optimal value (0 eV). Thereinto, Ni2B2 and Co3B4 MBenes can be promising multifunctional HER/OER/ORR electrocatalysts, and Fe3B4 MBene is expected to be a promising bifunctional electrocatalyst for HER/ORR. Especially, Ni2B2 MBene is even better than the benchmark RuO2 catalyst with ultralow low overpotentials of 0.26 and 0.30 V for OER and ORR, respectively. Then, we proposed that the overpotentials of OER/ORR can be well described by the varied ΔGOH* on MBene, which has been further illuminated through the d-band center and charge transfer analysis. Importantly, new scaling relations between the adsorption energies of OOH* and O* on MBenes have been established, where ΔGOOH* and ΔGO* possess different slopes versus ΔGOH*, allowing the significantly lower overpotentials of OER and ORR to be achieved. This work provides not only promising multifunctional HER/OER/ORR electrocatalysts but also new scaling relations to achieve the rational design of MBene-based electrocatalysts.

Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer

A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.

Engineering Magnetic Phases of Layered Antiferromagnets by Interfacial Charge Transfer

Van der Waals heterostructures composed of distinct layered materials can display behaviors entirely different from those of each individual layer due to interfacial coupling. Here we investigate the manipulation of magnetic phases in two-dimensional magnets through interfacial charge transfer in heterostructures of magnetic and nonmagnetic layers. This is demonstrated by first-principles calculations, which unveil a transition toward the ferromagnetic phase by stacking antiferromagnetic bilayer CrSBr on graphene. Using an effective model consisting of two electronically coupled single layers, we show that the antiferromagnetic to ferromagnetic magnetic phase transition occurs due to interfacial charge transfer, which enhances ferromagnetism. We further reveal that the magnetic phase transition can also be induced by electron and hole carriers and demonstrate that the phase transition is a spin-canting process. This allows for precise gate-control of noncollinear magnetism on demand. Our work predicts interfacial charge transfer as a potent mechanism to tune magnetic phases in van der Waals heterostructures and creates opportunities for spintronic applications.

Excellent 5f-electron magnet of actinide atom decorated gh-C3N4 monolayer

Atomic functionality of two-dimensional (2D) materials, typically with a controllable doping route for offering regular atomic arrangement as well as excellent magnetism, is crucial for both fundamental studies and spintronic applications. Here, the adsorptions of the 5f-electron actinide series (An = Ac-Am) on porous graphene-like carbon-nitride (gh-C3N4) layers are explored to determine their structural stabilities, electronic nature and magnetic properties using the combination of density functional theory (DFT) calculations, ab initio molecular dynamics (AIMD), Monte Carlo (MC) simulations and chemical bonding analyses. Our investigations reveal that each An atom can be individually adsorbed at the vacancy site of gh-C3N4 sheet with high energetic, thermal and dynamical stabilities, which are rooted in the major interactions of ionic An-N bonding as well as the minor interactions of covalent bonding of An-5f6d states with N-2s2p states. The delocalization of a very few 5f electrons is dependent on whether they occupy the suborbitals that are matching and conducive to hybridize with the ligand orbitals forming the 5f-2s2p covalent bonds. We propose that the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism plays a determining role for the inter-atomic 5f-5f magnetic exchange via the 6d electrons as the conduction electrons. Large magnetic moment and magnetic anisotropy energy (MAE) from the localized 5f electrons, together with the metallic characteristics owing to the delocalized 6d electrons, render these An-based 2D materials excellent metallic magnets, especially for the U@gh-C3N4 system with the modest magnetic moment of 0.6 μB, large MAE of 53 meV and high Curie temperature (TC) of 538 K.

Ferroic Phases in Two-Dimensional Materials

Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions

Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.

Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer

Magnetic anisotropy plays a vital role in stabilizing the long-range magnetic order of two-dimensional ferromagnetic systems. In this work, using the first-principles method, we systematically explored the triaxial magnetic anisotropic properties of a ferromagnetic semiconductor CrSBr monolayer, which is recently exfoliated from its bulk. Further analysis shows that the triaxial magnetic anisotropic properties originate from the coexistence of the magnetic dipole-dipole interaction (shape anisotropy) and the spin-orbit coupling interaction (magnetocrystalline anisotropy). Interestingly, the shape anisotropy, which has been neglected in most previous works, dominates over the magnetocrystalline anisotropy. Besides, the experimental Curie temperature of the CrSBr monolayer is well reproduced using Monte Carlo simulations. What is more, the easy magnetic axes and ferromagnetism in the CrSBr monolayer can be manipulated by strains and are relatively more susceptible to the uniaxial strain in the x direction. Our study not only explains the mechanism of triaxial magnetic anisotropy of the CrSBr monolayer, but also sheds light on how to tune the magnetic anisotropy and Curie temperature in ferromagnetic monolayers.

Two-dimensional ferromagnetic semiconductors of monolayer BiXO3 (X = Ru, Os) with direct band gaps, high Curie temperatures, and large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but are rarely reported with direct band gaps, high Curie temperatures (T_c), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO₃ (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations reveal that the monolayers show high T_c beyond 400 K. Interestingly, both BiXO₃ monolayers exhibit out-of-plane magnetic anisotropy, with magnetic anisotropy energy (MAE) of 1.07 meV per Ru for BiRuO₃ and 5.79 meV per Os for BiOsO₃. The estimated MAE for the BiOsO₃ sheet is one order of magnitude larger than that for the CrI₃ monolayer (685 μeV per Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of the monolayers BiRuO₃ and BiOsO₃ is mainly contributed by the matrix element differences between d_xy and d_x²-y² and d_yz and d_z² orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO₃ under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO₃ monolayers promising candidates for nanoscale electronics and spintronics.

High-temperature resistant electromagnetic protection bilayer structure based on the low-reflection metasurface and wave-absorbing material

In this paper, we propose a high-temperature resistant bilayer structure for electromagnetic protection with low reflection, consisting of a metasurface and an absorbing layer. The bottom metasurface decreases the reflected energy by using a phase cancellation mechanism to make electromagnetic wave scattering in the 8-12 GHz range. While the upper absorbing layer assimilates the incident electromagnetic energy through electrical losses and simultaneously regulates the reflection amplitude and phase of the metasurface to enhance scattering and expand its operating bandwidth. Research shows that the bilayer structure achieves a low reflection of -10 dB in the range of 6.7-11.4 GHz due to the combined effect of the above two physical mechanisms. In addition, long-term high-temperature and thermal cycling tests verified the stability of the structure in the temperature range of 25-300°C. This strategy provides the feasibility of electromagnetic protection in high-temperature conditions.

Theoretical studies on electronic, magnetic and optical properties of two dimensional transition metal trihalides

Two dimensional transition metal trihalides have drawn attention over the years due to their intrinsic ferromagnetism and associated large anisotropy at nanoscale. The interactions involved in these layered structures are of van der Waals types which are important for exfoliation to different thin samples. This enables one to compare the journey of physical properties from bulk structures to monolayer counterpart. In this topical review, the modulation of electronic, magnetic and optical properties by strain engineering, alloying, doping, defect engineering etc have been discussed extensively. The results obtained by first principle density functional theory calculations are verified by recent experimental observations. The relevant experimental synthesis of different morphological transition metal trihalides are highlighted. The feasibility of such routes may indicate other possible heterostructures. Apart from spintronics based applications, transition metal trihalides are potential candidates in sensing and data storage. Moreover, high thermoelectric figure of merit of chromium trihalides at higher temperatures leads to the possibility of multi-purpose applications. We hope this review will give important directions to further research in transition metal trihalide systems having tunable band gap with reduced dimensionalities.

Nonrelativistic Spin-Momentum Coupling in Antiferromagnetic Twisted Bilayers

Spin-momentum coupling, which depends strongly on the relativistic effect of heavy elements in solids, is the basis of many phenomena in spintronics. In this Letter, we theoretically predict nonrelativistic spin-momentum coupling in two-dimensional materials. By proposing magnetic symmetry requirements for spin splitting in two-dimensional systems, we find that a simple twisting operation can realize nonrelativistic spin splitting in antiferromagnetic bilayers. Through first-principles calculations, we demonstrate that momentum-dependent spin splitting exists extensively in antiferromagnetic twisted bilayers with different crystal structures and twist angles. The size of the spin splitting caused by twisting is of the same order of magnitude as that arising from spin-orbit coupling. In particular, a transverse spin current with an extremely high charge-spin conversion ratio can be generated in twisted structures under an external electric field. The findings demonstrate the potential for achieving electrically controlled magnetism in materials without spin-orbit coupling.

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.

Intrinsic ferromagnetism and the quantum anomalous Hall effect in two-dimensional MnOCl2 monolayers

Due to their potential application in spintronic devices, two-dimensional (2D) ferromagnetic materials are highly desired. We used first-principles calculations and Monte Carlo simulations to investigate the electronic structure and magnetic characteristics of the MnOCl₂ monolayers. We discovered two stable monolayer structures, Pmna-MnOCl₂ and Pmmn-MnOCl₂. Our findings show that the Pmna-MnOCl₂ monolayer is an intrinsic ferromagnetic semiconductor with an indirect band gap of 0.152 eV and a Curie temperature (T_C) of 202 K, while the Pmmn-MnOCl₂ monolayer is an intrinsic ferromagnetic Dirac semimetal with a high T_C (910 K) and triaxial magnetic anisotropy. We also show that a Pmmn-MnOCl₂ monolayer with a nontrivial band gap of 6.2 meV can achieve the quantum anomalous Hall effect (QAHE) with Chern number C = 1. Additionally, the existence of a gapless edge state can be flexibly regulated by choosing the terminal edges. Our studies reveal that the Pmmn-MnOCl₂ monolayer can serve as a candidate material to achieve high-temperature QAHE.

Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor.

Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3

Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe₂/In₂Se₃experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In₂Se₃, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In₂Se₃to VSe₂, the heterostructure has a type-III band alignment, and the charge transfer from In₂Se₃into VSe₂induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In₂Se₃is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe₂was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe₂/In₂Se₃predicts its wide applications in the fields of both 2D spintronics and multiferroics.

Cr2XTe4(X = Si, Ge) monolayers: a new type of two-dimensional high-TCIsing ferromagnetic semiconductors with a large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductor (FMS) provides the ideal platform for the development of quantum information technology in nanoscale devices. However, most of them suffer from low Curie temperature and small magnetic anisotropic energy (MAE), severely limiting their practical application. In this work, by using first-principles calculations, we predicted two stable 2D materials, namely, Cr₂SiTe₄and Cr₂GeTe₄monolayers. Interestingly, both of them are intrinsic direct band gap FMSs (∼1 eV) with a large magnetization (8µ_Bf.u.^-1) and sizable MAE (∼500μ_eV Cr^-1). Monte Carlo simulations based on Heisenberg model suggest markedly high Curie temperatures of these monolayers (∼200 K). Besides, their high mechanical, dynamical, and thermal stabilities are further verified by elastic constants, phonon dispersion calculations, andab initiomolecular dynamics simulations. The outstanding attributes render Cr₂XTe₄(X = Si, Ge) monolayers broadening the candidates of 2D FMS for a wide range of applications.

Machine Learning Study of the Magnetic Ordering in 2D Materials

Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of two-dimensional (2D) materials has opened new arenas for magnetic compounds, even when classical theories discourage their examination. Here we propose a machine-learning-based strategy to predict and understand magnetic ordering in 2D materials. This strategy couples the prediction of the existence of magnetism in 2D materials using a random forest and the Shapley additive explanations method with material maps defined by atomic features predicting the magnetic ordering (ferromagnetic or antiferromagnetic). While the random forest model predicts magnetism with an accuracy of 86%, the material maps obtained by the sure independence screening and sparsifying method have an accuracy of ∼90% in predicting the magnetic ordering. Our model indicates that 3d transition metals, halides, and structural clusters with regular transition-metal sublattices have a positive contribution in the total weight deciding the existence of magnetism in 2D compounds. This behavior is associated with the competition between crystal field and exchange splitting. The machine learning model also indicates that the atomic spin orbit coupling (SOC) is a determinant feature for the identification of the patterns separating ferro- from antiferromagnetic order. The proposed strategy is used to identify novel 2D magnetic compounds that, together with the fundamental trends in the chemical and structural space, pave novel routes for experimental exploration.

Negative Piezoelectric Coefficient in Ferromagnetic 1H-LaBr2 Monolayer

The discovery of two-dimensional (2D) magnetic materials that have excellent piezoelectric response is promising for nanoscale multifunctional piezoelectric or spintronic devices. Piezoelectricity requires a noncentrosymmetric structure with an electronic band gap, whereas magnetism demands broken time-reversal symmetry. Most of the well-known 2D piezoelectrics, e.g., 1H-MoS₂ monolayer, are not magnetic. Being intrinsically magnetic, semiconducting 1H-LaBr₂ and 1H-VS₂ monolayers can combine magnetism and piezoelectricity. We compare piezoelectric properties of 1H-MoS₂, 1H-VS₂, and 1H-LaBr₂ using density functional theory. The ferromagnetic 1H-LaBr₂ and 1H-VS₂ monolayers display larger piezoelectric strain coefficients, namely, d ₁₁ = -4.527 pm/V for 1H-LaBr₂ and d ₁₁ = 4.104 pm/V for 1H-VS₂, compared to 1H-MoS₂ (d ₁₁ = 3.706 pm/V). 1H-MoS₂ has a larger piezoelectric stress coefficient (e ₁₁ = 370.675 pC/m) than 1H-LaBr₂ (e ₁₁ = -94.175 pC/m) and 1H-VS₂ (e ₁₁ = 298.100 pC/m). The large d ₁₁ for 1H-LaBr₂ originates from the low elastic constants, C ₁₁ = 30.338 N/m and C ₁₂ = 9.534 N/m. The sign of the piezoelectric coefficients for 1H-LaBr₂ is negative, and this arises from the negative ionic contribution of e ₁₁, which dominates in 1H-LaBr₂, whereas the electronic part of e ₁₁ dominates in 1H-MoS₂ and 1H-VS₂. We explain the origin of this large ionic contribution of e ₁₁ for 1H-LaBr₂ through Born effective charges (Z ₁₁) and the sensitivity of the atomic positions to the strain (du/dη). We observe a sign reversal in the Z ₁₁ values of Mo and S compared to the nominal oxidation states, which makes both the electronic and ionic parts of e ₁₁ positive and results in the high value of e ₁₁. We also show that a change in magnetic order can enhance (reduce) the piezoresponse of 1H-LaBr₂ (1H-VS₂).

Ferroelectric and Room-Temperature Ferromagnetic Semiconductors in the 2D MIMIIGe2X6 Family: First-Principles and Machine Learning Investigations

Inspired by experimentally discovering ferromagnetism and ferroelectricity in two-dimensional (2D) CrGeTe₃ and CuInP₂S₆ with similar geometric structures, respectively, we systematically investigated ferroic properties in a large family of 2D M_IM_IIGe₂X₆ (M_I and M_II = metal elements, X = S/Se/Te) by combining high-throughput first-principles calculations and the machine learning method. We identified 12 stable 2D multiferroics containing simultaneously ferromagnetic (FM) and ferroelectric (FE) properties and 35 2D ferromagnets without FE polarization. Particularly, the predicted FM Curie temperatures (T_C) of eight 2D FM+FE semiconductors are close to or above room temperature. The ferroelectricity originates from the spontaneous geometric symmetry breaking induced by the unexpected shift of Ge-Ge atomic pairs and the emergence of Ge lone pair electrons, which also strengthens the p-d orbital hybridization between X atoms and metal atoms, leading to enhanced super-super-exchange interactions and raising the FM T_C. Our findings not only enrich the family of 2D ferroic materials and present room-temperature FM semiconductors but also disclose the mechanism of the emerging ferroelectricity and enhanced ferromagnetism, which sheds light on the realization of high temperature multiferroics as well as FM semiconductors.

Ni(NCS)2 monolayer: a robust bipolar magnetic semiconductor

Searching for experimentally feasible intrinsic two-dimensional ferromagnetic semiconductors is of great significance for applications of nanoscale spintronic devices. Here, based on the first-principles calculations, an Ni(NCS)₂ monolayer was systematically investigated. The results showed that the Ni(NCS)₂ monolayer was a robust bipolar ferromagnetic semiconductor with a moderate bandgap of ∼1.5 eV. Based on the Monte Carlo simulation, its Curie temperature was about 37 K. Interestingly, the Ni(NCS)₂ monolayer remains ferromagnetic ordering when strain and electron doping were applied. However, ferromagnetic-to-antiferromagnetic phase transition occurred when high concentrations of holes were doped. Besides, the Ni(NCS)₂ monolayer is confirmed to be potentially exfoliated from its bulk forms due to its small exfoliated energy. Finally, the Ni(NCS)₂ monolayer's thermodynamic, dynamic, and mechanical stabilities were confirmed by the phonon spectrum calculation, ab initio molecular dynamics simulation and elastic constants calculation, respectively. The results showed that the Ni(NCS)₂ monolayer, as a novel 2D ferromagnetic candidate material of new magnetic molecular framework materials, may have a promising potential for magnetic nanoelectronic devices.

CrSbS3 monolayer: a potential phase transition ferromagnetic semiconductor

Two dimensional intrinsic ferromagnetic semiconductors with controllable magnetic phase transition are highly desirable for spintronics. Nevertheless, reports on their successful experimental realization are still rare. Herein, based on first principles calculations, we propose to achieve such a functional material, namely CrSbS₃ monolayer by exfoliating from its bulk crystal. Intrinsic CrSbS₃ monolayer is a ferromagnetic half semiconductor with a moderate bandgap of 1.90 eV. It features an intriguing magnetic phase transition from ferromagnetic to antiferromagnetic when applying a small compressive strain (∼2%), making it ideal for fabricating strain-controlled magnetic switches or memories. In addition, the predicted strong anisotropic absorption of visible light and small effective masses make the CrSbS₃ monolayer promising for optoelectronic applications.

Time-reversal-breaking Weyl nodal lines in two-dimensional A3C2 (A = Ti, Zr, and Hf) intrinsically ferromagnetic materials with high Curie temperature

Most materials that feature nontrivial band topology are spin-degenerate and three dimensional, strongly restricting them from application in spintronic nanodevices. Hence, two-dimensional (2D) intrinsically spin-polarized systems with rich topological elements are still in extreme scarcity. Here, 2D A₃C₂ (A = Ti, Zr, and Hf) materials with the P6[combining macron]m2 type structure are reported as new ferromagnetic materials with intrinsic magnetism and good stability. Unlike the Weyl nodal lines existing in nonmagnetic 2D systems, A₃C₂ hosts time-reversal-breaking Weyl nodal rings (two Γ-centered, one K-centered, and one K'-centered) without spin-orbit coupling (SOC). These nodal rings still remained under SOC with magnetization along the z direction (easy magnetization axis). More interestingly, the Curie temperatures (T_C) of A₃C₂ were determined based on the Monte Carlo simulation. Ti₃C₂ features an extraordinary T_C (above 800 K), and those of Zr₃C₂ and Hf₃C₂ are above room temperature. Therefore, A₃C₂ materials are excellent platforms to study magnetic Weyl nodal lines in high T_C ferromagnetic 2D materials.

A first-principles study on the electronic property and magnetic anisotropy of ferromagnetic CrOF and CrOCl monolayers

Two-dimensional ferromagnetic materials with large perpendicular magnetic anisotropy (PMA) hold great potential in realizing low critical switching current, high thermal stability and high density nonvolatile storage in magnetic random-access memories. Our first-principles calculations reveal that CrOF and CrOCl monolayers (MLs) are two-dimensional (2D) ferromagnetic semiconductors with out-of-plane magnetic easy axis, and PMAs of CrOF and CrOCl MLs are mainly contributed by Cr atoms. The magnetic anisotropy of CrOF and CrOCl MLs can be controlled and enhanced by applying biaxial strain. Tensile strain can further enhance PMAs of CrOF and CrOCl MLs by 82.9% and 161.0% higher than those of unstrained systems, respectively. In addition, appropriate compressive strain can switch the magnetic easy axis of CrOF and CrOCl MLs from out-of-plane direction to in-plane direction. The semiconductor natures of CrOF and CrOCl MLs robust against biaxial strain, the band gaps of these systems under biaxial strain are in the range of 1.26 eV to 2.40 eV. By applying biaxial strain, the Curie temperatures of CrOF and CrOCl MLs increase up to 282 K and 163 K, respectively. These tunable properties suggest that CrOF and CrOCl MLs have great application potentials for magnetic data storage.

Two-dimensional magnetic materials: structures, properties and external controls

Since the discovery of intrinsic ferromagnetism in atomically thin Cr2Gr2Te6 and CrI3 in 2017, research on two-dimensional (2D) magnetic materials has become a highlighted topic. Based on 2D magnetic materials and their heterostructures, exotic physical phenomena at the atomically thin limit have been discovered, such as the quantum anomalous Hall effect, magneto-electric multiferroics, and magnon valleytronics. Furthermore, magnetism in these ultrathin magnets can be effectively controlled by external perturbations, such as electric field, strain, doping, chemical functionalization, and stacking engineering. These attributes make 2D magnets ideal platforms for fundamental research and promising candidates for various spintronic applications. This review aims at providing an overview of the structures, properties, and external controls of 2D magnets, as well as the challenges and potential opportunities in this field.

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1-CrTe2 Electrodes

Two-dimensional (2D) van der Waals (vdW) heterostructures have opened new avenues for spintronic applications with novel properties. Here, by density functional theory calculations, we investigated the spin-dependent transport in vdW magnetic tunnel junctions (MTJs) composed of 1T-CrTe₂ ferromagnetic electrodes. Meanwhile, graphene and h-BN are employed as tunnel barriers. It has been found that the tunneling magnetoresistance (TMR) effects of two types of vdW MTJs present analogous trends: thicknesses of barriers have a great influence on the TMR ratios, which reach up to the maximum when barriers increase to five monolayers. However, despite the similarity, the graphene-barrier junction is more promising for optimization. Through observing the energy-resolved transmission spectra of vdW MTJs, we noticed that TMR ratios of graphene-barrier junctions are tunable and could be enhanced through tuning the position of Fermi energy. Therefore, we successfully realized the TMR optimization by substitutional doping. When substituting one carbon atom with one boron atom in the graphene barrier, TMR ratios are drastically improved, and a TMR ratio as high as 6962% could be obtained in the doped seven-monolayer-barrier junction. Our results pave the way for vdW MTJ applications in spintronics.

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

Near Degeneracy of Magnetic Phases in Two-Dimensional Chromium Telluride with Enhanced Perpendicular Magnetic Anisotropy

The discovery of atomically thin van der Waals magnets (e.g., CrI₃ and Cr₂Ge₂Te₆) has triggered a renaissance in the study of two-dimensional (2D) magnetism. Most of the 2D magnetic compounds discovered so far host only one single magnetic phase unless the system is at a phase boundary. In this work, we report the near degeneracy of magnetic phases in ultrathin chromium telluride (Cr₂Te₃) layers with strong perpendicular magnetic anisotropy highly desired for stabilizing 2D magnetic order. Single-crystalline Cr₂Te₃ nanoplates with a trigonal structure (space group P3̅1c) were grown by chemical vapor deposition. The bulk magnetization measurements suggest a ferromagnetic (FM) order with an enhanced perpendicular magnetic anisotropy, as evidenced by a coercive field as large as ∼14 kOe when the field is applied perpendicular to the basal plane of the thin nanoplates. Magneto-optical Kerr effect studies confirm the intrinsic ferromagnetism and characterize the magnetic ordering temperature of individual nanoplates. First-principles density functional theory calculations suggest the near degeneracy of magnetic orderings with a continuously varying canting from the c-axis FM due to their comparable energy scales, explaining the zero-field kink observed in the magnetic hysteresis loops. Our work highlights Cr₂Te₃ as a promising 2D Ising system to study magnetic phase coexistence and switches for ultracompact information storage and processing.

Controlling bimerons as skyrmion analogues by ferroelectric polarization in 2D van der Waals multiferroic heterostructures

Atom-thick van der Waals heterostructures with nontrivial physical properties tunable via the magnetoelectric coupling effect are highly desirable for the future advance of multiferroic devices. In this work on LaCl/In₂Se₃ heterostructure consisting of a 2D ferromagnetic layer and a 2D ferroelectric layer, reversible switch of the easy axis and the Curie temperature of the magnetic LaCl layer has been enabled by switching of ferroelectric polarization in In₂Se₃. More importantly, magnetic skyrmions in the bimerons form have been discovered in the LaCl/In₂Se₃ heterostructure and can be driven by an electric current. The creation and annihilation of bimerons in LaCl magnetic nanodisks were achieved by polarization switching. It thus proves to be a feasible approach to achieve purely electric control of skyrmions in 2D van der Waals heterostructures. Such nonvolatile and tunable magnetic skyrmions are promising candidates for information carriers in future data storage and logic devices operated under small electrical currents.

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, T_N  = 132 ± 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Δ_E  = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.

Prediction of room-temperature ferromagnetism in a two-dimensional direct band gap semiconductor

Two-dimensional (2D) ferromagnetic (FM) semiconductors with a direct electronic band gap have recently drawn much attention due to their promising potential for spintronic and magneto-optical applications. However, the Curie temperature (T_C) of recently synthesized 2D FM semiconductors is too low (∼45 K) and a room-temperature 2D direct band gap FM semiconductor has never been reported, which hinders the development for practical magneto-optical applications. Here, we show that through isovalent alloying, one can increase the T_C of a 2D FM semiconductor up to room temperature and simultaneously turn it from an indirect to a direct band gap semiconductor. Using the first-principles calculations, we predict that the alloyed CrMoS₂Br₂ monolayer is a direct band gap semiconductor with a T_C of ∼360 K, whereas the pristine CrSBr monolayer is an indirect band gap semiconductor with a T_C of ∼180 K. These findings provide a promising pathway to realize 2D direct band gap FM semiconductors with T_C above room temperature, which will greatly stimulate theoretical and experimental interest in future spintronic and magneto-optical applications.

In-Plane Magnetic Domains and Néel-like Domain Walls in Thin Flakes of the Room Temperature CrTe2 Van der Waals Ferromagnet

The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth of investigations in materials science and now offers genuinely new prospects for both fundamental and applied research. Although the catalog of vdW ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective X-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domain walls in micron-sized flakes of the CrTe₂ vdW ferromagnet. Flux-closure magnetic patterns suggesting an in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have Néel texture, are preferentially oriented along directions separated by 120°, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few millitesla only, showing that the CrTe₂ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

First-principles investigation of a new 2D magnetic crystal: Ferromagnetic ordering and intrinsic half-metallicity

The development of two-dimensional (2D) magnetic materials with half-metallic characteristics is of great interest because of their promising applications in spintronic devices with high circuit integration density and low energy consumption. Here, by using density functional theory calculations, ab initio molecular dynamics, and Monte Carlo simulation, we study the stability, electronic structure, and magnetic properties of a OsI₃ monolayer, of which crystalline bulk is predicted to be a van der Waals layered ferromagnetic (FM) semiconductor. Our results reveal that the OsI₃ monolayer can be easily exfoliated from the bulk phase with small cleavage energy and is energetically and thermodynamically stable at room temperature. Intrinsic half-metallicity with a wide bandgap and FM ordering with an estimated T_C = 35 K are found for the OsI₃ monolayer. Specifically, the FM ordering can be maintained under external biaxial strain from -2% to 5%. The in-plane magnetocrystalline anisotropy energy of the 2D OsI₃ monolayer reaches up to 3.89 meV/OsI₃, which is an order larger than that of most magnetic 2D materials such as the representative monolayer CrI₃. The excellent magnetic features of the OsI₃ monolayer therefore render it a promising 2D candidate for spintronic applications.

Tunable Room-Temperature Ferromagnetism in Two-Dimensional Cr2Te3

The manipulation of magnetism provides a unique opportunity for the development of data storage and spintronic applications. Until now, electrical control, pressure tuning, stacking structure dependence, and nanoscale engineering have been realized. However, as the dimensions are decreased, the decrease of the ferromagnetism phase transition temperature (T_c) is a universal trend in ferromagnets. Here, we make a breakthrough to realize the synthesis of 1 and 2 unit cell (UC) Cr₂Te₃ and discover a room-temperature ferromagnetism in two-dimensional Cr₂Te₃. The newly observed T_c increases strongly from 160 K in the thick flake (40.3 nm) to 280 K in 6 UC Cr₂Te₃ (7.1 nm). The magnetization and anomalous Hall effect measurements provided unambiguous evidence for the existence of spontaneous magnetization at room temperature. The theoretical model revealed that the reconstruction of Cr₂Te₃ could result in anomalous thickness-dependent T_c. This dimension tuning method opens up a new avenue for manipulation of ferromagnetism.

First-Principles Study of the Effect of Native Defects on Spin Polarization and Exchange Coupling Interaction in Semimetal V3O4

We use first-principles calculations to investigate the mechanism of the effect of native defects on the spin polarization and exchange coupling interaction in the V₃O₄ semimetal material. Our results reveal that, in contrast to other neutral defects, V vacancy defects in V₃O₄ at A/B sites are in favor of higher spin polarization degrees and lower defect formation energies. Compared to ideal V₃O₄, the V vacancy defects at A/B sites cause slightly lower spin polarization degrees but much higher exchange coupling interactions. Our results suggest an effective route to mediate the spin polarization and exchange coupling by defect engineering, which promotes the applications of the V₃O₄ semimetal material in spintronics.

Glide Mirror Plane Protected Nodal-Loop in an Anisotropic Half-Metallic MnNF Monolayer

Two-dimensional (2D) nodal-loop (NL) semimetals have attracted tremendous attention for their abundant physics and potential device applications, whereas the realization of gapless NL semimetals robust against spin-orbit coupling (SOC) remains a big challenge. Recently, breakthroughs have been made with the realization of gapless NL semimetals in 2D half-metallic materials, where NLs were protected by a horizontal mirror plane symmetry. Here we first propose an alternative nonsymmorphic horizontal glide mirror plane symmetry which could protect the NLs in 2D materials. On the basis of comprehensive first-principles calculations and symmetry analysis, we found that the glide mirror symmetry together with intrinsic out-of-plane spin polarization can protect the NL against SOC in a half-metallic semimetal, namely, the MnNF monolayer. Moreover, we predict that the MnNF monolayer has strong anisotropic characteristics, tunable band structure by changing the magnetization direction, and 100% spin-polarized transport properties. Our work not only provides a novel 2D half-metallic semimetal with strong anisotropy but also broadens the scope of 2D nodal-loop materials.

Tuning the spin polarization in monolayer MoS2 through (Y,Yb) co-doping

Yb-Doped monolayer MoS₂ is ferromagnetic at room temperature, and this ferromagnetic state can be stabilized by Y co-doping.

Two-dimensional stable Fe-based ferromagnetic semiconductors: FeI3 and FeI1.5Cl1.5 monolayers

Two kinds of novel ferromagnetic semiconductors FeI₃ and FeI_1.5Cl_1.5 have high Curie temperature (>77 K) and sizable MAE.

Two-Dimensional AXenes: A New Family of Room-Temperature d0 Ferromagnets and Their Structural Phase Transitions

The recent discovery of two-dimensional (2D) magnetic order in monolayer CrI₃ and bilayer Fe₃GeTe₂ has stimulated intense experimental and theoretical activities to expand the family of 2D magnets. Most 2D magnets reported to date are transition metal compounds with unpaired d electrons. Novel 2D intrinsic magnets with long-range p state coupling are also highly desirable. Here, we propose that nonstoichiometry is a feasible and universal strategy to realize long-range p electron magnetic order in 2D metal-shrouded AXenes (Na₂N, K₂N, and Rb₂N), supported by our first-principles calculations. Taking K₂N as a representative, three series of cation-deficient K₂N (T, H, and I phases) have been predicted as stable ferromagnetic half-metal/metal with a Curie temperature of 480-1180 K. Their robust ferromagnetism is ascribed to the coexistence of carrier-mediated exchange and N-K-N superexchange interaction. Moreover, mechanical deformation can trigger reversible phase transformation by choosing their 3D layered counterpart as the intermediate phase.

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Two-dimensional (2D) Cr-based layered and non-layered materials such as CrI₃, Cr₂Ge₂Te₆, Cr₂S₃, CrSe, and CrOX (X = Cl and Br) have attracted considerable attention due to their potential application in spintronics. Despite few experimental studies, theoretical studies reported that 2D chromium dichalcogenide (CrS₂) materials show unique properties such as valley polarization, piezoelectric coupling, and phase dependent intrinsic magnetic properties. Here, we report for the first time the synthesis of 2D layered CrS₂ flakes down to the monolayer via the chemical vapor deposition (CVD) method, its phase structures and electronic properties. We observed the 2H, 1T, and 1T' phases coexisting in CVD grown monolayer CrS₂. The formation of 1T' phases from 1T phases is described by dimerization of metal atoms at room temperature according to our molecular dynamics studies. The coexistence of 1T and 1T' phases with 2H phases is referred to as the 1T and 1T' puddling phenomenon. We theoretically showed that the monolayer 2H-CrS₂ is a direct bandgap semiconductor with a gap of approximately 0.95 eV predicted by the PBE functional, while the 1T- and 1T'-CrS₂ are metallic and semi-metallic with approximately 10 meV gap, respectively. Furthermore, 2H CrS₂ exhibits nonmagnetic semiconducting properties while for ferromagnetic spin configuration, the 1T and 1T' CrS₂ show magnetic characteristics with 0.531μ_B and 2.206μ_B magnetic moment per Cr atom respectively, for ferromagnetic spin configuration as predicted from DFT+U calculation. Importantly, CrS₂-based field-effect transistors exhibit a p-type behavior. Our study would stimulate further exploration of 2D layered CrS₂ with astonishing properties and open up a whole new avenue for the urgent need for developing multifunctional 2D materials for nanoelectronics, valleytronics, and spintronics.

Room-Temperature Ferromagnetism in Transition Metal Embedded Borophene Nanosheets

Exploring two-dimensional (2D) materials with room-temperature ferromagnetism and large perpendicular magnetic anisotropy is highly desirable but challenging. Here, through first-principles calculations, we propose a viable strategy to achieve such materials based on transition metal (TM) embedded borophene nanosheets. Due to electron deficiency, the commonly existent hexagon boron vacancies in various borophene phases serve as intrinsic anchor points for electron-rich transition metals, which not only adsorb strongly upon the vacancies but also favor to be embedded into the vacancies, forming 2D planar hybrid nanosheets. The adsorption-to-embedding transition is feasible thermodynamically and kinetically, owing to its exothermic nature and relatively small kinetic barriers. After embedding, phase transition is further proposed to obtain diverse structures of TM embedded borophenes with versatile magnetic properties. Based on the example of χ₃ phase borophene, several ferromagnetic TM embedded borophene nanosheets with high Curie temperature and large perpendicular magnetic anisotropy have been predicted.