Large and Dense Organic-Inorganic Hybrid Perovskite CH3NH3PbI3 Wafer Fabricated by One-Step Reactive Direct Wafer Production with High X-ray Sensitivity

Dense Perovskite Thick Film Enabled by Saturated Solution Filling for Sensitive X-ray Detection and Imaging

Thick polycrystalline perovskite films synthesized by using solution processes show great potential in X-ray detection applications. However, due to the evaporation of the solvent, many pinholes and defects appear in the thick films, which deteriorate their optoelectronic properties and diminish their X-ray detection performance. Therefore, the preparation of large area and dense perovskite thick films is desired. Herein, we propose an effective strategy of filling the pores with a saturated precursor solution. By adding the saturated perovskite solution to the polycrystalline perovskite thick film, the original perovskite film will not be destroyed because of the solution-solute equilibrium relationship. Instead, it promotes in situ crystal growth within the thick film during the annealing process. The loosely packed grains in the original thick perovskite film are connected, and the pores and defects are partially filled and fixed. Finally, a much denser perovskite thick film with improved optoelectronic properties has been obtained. The optimized thick film exhibits an X-ray sensitivity of 1616.01 μC Gyair-1 cm-2 under an electric field of 44.44 V mm-1 and a low detection limit of 28.64 nGyair s-1 under an electric field of 22.22 V mm-1. These values exceed the 323.86 μC Gyair-1 cm-2 and 40.52 nGyair s-1 of the pristine perovskite thick film measured under the same conditions. The optimized thick film also shows promising working stability and X-ray imaging capability.

Exploring Non-Toxic Lower Dimensional Perovskites for Next-Generation X-Ray Detectors

Owing to their extraordinary photophysical properties, organometal halide perovskites are emerging as a new material class for X-ray detection. However, the existence of toxic lead makes their commercialization questionable and should readily be replaced. Accordingly, several lead alternatives have been introduced into the framework of conventional perovskites, resulting in various new perovskite dimensionalities. Among these, Pb-free lower dimensional perovskites (LPVKs) not only show promising X-ray detecting properties due to their higher ionic migration energy, wider and tunable energy bandgap, smaller dark currents, and structural versatility but also exhibit extended environmental stability. Herein, first, the structural organization of the PVKs (including LPVKs) is summarized. In the context of X-ray detectors (XDs), the outstanding properties of the LPVKs and active layer synthesis routes are elaborated afterward. Subsequently, their applications in direct XDs are extensively discussed and the device performance, in terms of the synthesis method, device architecture, active layer size, figure of merits, and device stability are tabulated. Finally, the review is concluded with an in-depth outlook, thoroughly exploring the present challenges to LPVKs XDs, proposing innovative solutions, and future directions. This review provides valuable insights into optimizing non-toxic Pb-free perovskite XDs, paving the way for future advancements in the field.

High-Performance Hard X-Ray Imaging Detector Using Facet-Dependent Bismuth Vanadate

Bismuth vanadate (BiVO4) exhibits large absorption efficiency for hard X-rays, which endows it with a robust capacity to attenuate X-ray radiation across a broad energy range. The anisotropic properties of BiVO4 allow for the manipulation of their physical and chemical characteristics through crystallographic orientation and exposed facets. In this study, the issue of heavy recombination caused by sluggish electron transport in BiVO4 is successfully addressed by enhancing the abundance of the (040) crystal face ratio using a Co2+ crystal face exposure agent. The facet-dependent modifications exhibit excellent and balanced intrinsic charge transport properties, and finely optimize both the sensitivity and detection limit of BiVO4 X-ray detectors. As a result, ultra-stable BiVO4 metal oxide X-ray detectors demonstrate a high sensitivity of 3164 µC Gyair -1 cm-2 and a low detection limit of 20.76 nGyair s-1 under 110 kVp hard X-rays, establishing a new benchmark for X-ray detectors based on polycrystalline Bi-halides and metal oxides. These findings highlight the significance of crystal orientation in optimizing materials for X-ray detection, setting a new sensitivity record for X-ray detectors based on polycrystalline Bi-halides and metal oxides, which paves the way for the development of advanced, low-dose, and highly stable imaging systems specifically for hard X-rays.

Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors, due to the development of sensitive, fast, and cost-effective devices. Self-powered operation, ensuring portability and low power consumption, has also been recently demonstrated in both bulk materials and thin films. However, the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours, often reporting degradation of the detection performance. Here it is shown that self-powered direct X-ray detectors, fabricated starting from a FAPbBr3 submicrometer-thick film deposition onto a mesoporous TiO2 scaffold, can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss, demonstrating ultra-high operational stability and excellent repeatability. No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy, revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film. In addition, trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy-1 cm-3 at 0 V, an unprecedented value in the field of thin-film-based photoconductors and photodiodes for "hard" X-rays. Finally, prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

Optically Transparent Lead Halide Perovskite Polycrystalline Ceramics

We utilize room-temperature uniaxial pressing at applied loads achievable with low-cost, laboratory-scale presses to fabricate freestanding CH3NH3PbX3 (X- = Br-, Cl-) polycrystalline ceramics with millimeter thicknesses and optical transparency up to ∼70% in the infrared. As-fabricated perovskite ceramics can be produced with desirable form factors (i.e., size, shape, and thickness) and high-quality surfaces without any postprocessing (e.g., cutting or polishing). This method should be broadly applicable to a large swath of metal halide perovskites, not just the compositions shown here. In addition to fabrication, we analyze microstructure-optical property relationships through detailed experiments (e.g., transmission measurements, electron microscopy, X-ray tomography, optical profilometry, etc.) as well as modeling based on Mie theory. The optical, electrical, and mechanical properties of perovskite polycrystalline ceramics are benchmarked against those of single-crystalline analogues through spectroscopic ellipsometry, Hall measurements, and nanoindentation. Finally, γ-ray scintillation from a transparent MAPbBr3 ceramic is demonstrated under irradiation from a 137Cs source. From a broader perspective, scalable methods to produce freestanding polycrystalline lead halide perovskites with comparable properties to their single-crystal counterparts could enable key advancements in the commercial production of perovskite-based technologies (e.g., direct X-ray/γ-ray detectors, scintillators, and nonlinear optics).

Stereo-Hindrance Engineering of A Cation toward <110>-Oriented 2D Perovskite with Minimized Tilting and High-Performance X-Ray Detection

2D <100>-oriented Dion-Jacobson or Ruddlesden-Popper perovskites are widely recognized as promising candidates for optoelectronic applications. However, the large interlayer spacing significantly hinders the carrier transport. <110>-oriented 2D perovskites naturally exhibit reduced interlayer spacings, but the tilting of metal halide octahedra is typically serious and leads to poor charge transport. Herein, a <110>-oriented 2D perovskite EPZPbBr4 (EPZ = 1-ethylpiperazine) with minimized tilting is designed through A-site stereo-hindrance engineering. The piperazine functional group enters the space enclosed by the three [PbBr6 ]4- octahedra, pushing Pb─Br─Pb closer to a straight line (maximum Pb─Br─Pb angle ≈180°), suppressing the tilting as well as electron-phonon coupling. Meanwhile, the ethyl group is located between layers and contributes an extremely reduced effective interlayer distance (2.22 Å), further facilitating the carrier transport. As a result, EPZPbBr4 simultaneously demonstrates high µτ product (1.8 × 10-3 cm2 V-1 ) and large resistivity (2.17 × 1010 Ω cm). The assembled X-ray detector achieves low dark current of 1.02 × 10-10 A cm-2 and high sensitivity of 1240 µC Gy-1 cm-2 under the same bias voltage. The realized specific detectivity (ratio of sensitivity to noise current density, 1.23 × 108 µC Gy-1 cm-1 A-1/2 ) is the highest among all reported perovskite X-ray detectors.

Perovskite materials in X-ray detection and imaging: recent progress, challenges, and future prospects

Perovskite materials have attracted significant attention as innovative and efficient X-ray detectors owing to their unique properties compared to traditional X-ray detectors. Herein, chronologically, we present an in-depth analysis of X-ray detection technologies employing organic-inorganic hybrids (OIHs), all-inorganic and lead-free perovskite material-based single crystals (SCs), thin/thick films and wafers. Particularly, this review systematically scrutinizes the advancement of the diverse synthesis methods, structural modifications, and device architectures exploited to enhance the radiation sensing performance. In addition, a critical analysis of the crucial factors affecting the performance of the devices is also provided. Our findings revealed that the improvement from single crystallization techniques dominated the film and wafer growth techniques. The probable reason for this is that SC-based devices display a lower trap density, higher resistivity, large carrier mobility and lifetime compared to film- and wafer-based devices. Ultimately, devices with SCs showed outstanding sensitivity and the lowest detectable dose rate (LDDR). These results are superior to some traditional X-ray detectors such as amorphous selenium and CZT. In addition, the limited performance of film-based devices is attributed to the defect formation in the bulk film, surfaces, and grain boundaries. However, wafer-based devices showed the worst performance because of the formation of voids, which impede the movement of charge carriers. We also observed that by performing structural modification, various research groups achieved high-performance devices together with stability. Finally, by fusing the findings from diverse research works, we provide a valuable resource for researchers in the field of X-ray detection, imaging and materials science. Ultimately, this review will serve as a roadmap for directing the difficulties associated with perovskite materials in X-ray detection and imaging, proposing insights into the recent status, challenges, and promising directions for future research.

Tissue Equivalent Curved Organic X-ray Detectors Utilizing High Atomic Number Polythiophene Analogues

Organic semiconductors are a promising material candidate for X-ray detection. However, the low atomic number (Z) of organic semiconductors leads to poor X-ray absorption thus restricting their performance. Herein, the authors propose a new strategy for achieving high-sensitivity performance for X-ray detectors based on organic semiconductors modified with high -Z heteroatoms. X-ray detectors are fabricated with p-type organic semiconductors containing selenium heteroatoms (poly(3-hexyl)selenophene (P3HSe)) in blends with an n-type fullerene derivative ([6,6]-Phenyl C71 butyric acid methyl ester (PC70 BM). When characterized under 70, 100, 150, and 220 kVp X-ray radiation, these heteroatom-containing detectors displayed a superior performance in terms of sensitivity up to 600 ± 11 nC Gy-1  cm-2 with respect to the bismuth oxide (Bi2 O3 ) nanoparticle (NP) sensitized organic detectors. Despite the lower Z of selenium compared to the NPs typically used, the authors identify a more efficient generation of electron-hole pairs, better charge transfer, and charge transport characteristics in heteroatom-incorporated detectors that result in this breakthrough detector performance. The authors also demonstrate flexible X-ray detectors that can be curved to a radius as low as 2 mm with low deviation in X-ray response under 100 repeated bending cycles while maintaining an industry-standard ultra-low dark current of 0.03 ± 0.01 pA mm-2 .

Macroscopic Piezoelectricity of Halide Perovskite Single Crystals and Their Highly Sensitive Self-Powered X-ray Detectors

The FAxMA1-xPbI3 single crystal has excellent semiconductor photoelectric performance and good stability; however, there have been conflicting opinions regarding its macroscopic piezoelectricity. Here, the FAxMA1-xPbI3 (x = 0-0.1) single crystals (FAx SCs) exhibit a high macroscopic piezoelectric d33 coefficient of over 10 pC/N. The single crystal transforms from a tetragonal ferroelectric phase to a cubic paraelectric phase at x = 0.1-0.125. Furthermore, the fully polarized MAPbI3 and FA0.05 SCs were applied to prepare self-powered X-ray detectors with vertical structures. The sensitivity of the detector reaches 5.1 × 104 μC·Gy-1·cm-2 under a 0 V bias voltage, and its detection limit is as low as 50 nGy/s. This work provides an approach to designing self-powered and high-quality detectors with piezoelectric semiconductors.

Bottom-Up Photosynthesis of an Air-Stable Radical Semiconductor Showing Photoconductivity to Full Solar Spectrum and X-Ray

Single-component semiconductors with photoresponse to full solar spectrum are highly desirable to simplify the device structure of commercial photodetectors and to improve solar conversion or photocatalytic efficiency but remain scarce. This work reports bottom-up photosynthesis of an air-stable radical semiconductor using BiI3 and a photochromism-active benzidine derivative as a photosensitive functional motif. This semiconductor shows photoconductivity to full solar spectrum contributed by radical and non-radical forms of the benzidine derivative. It has also the potential to detect X-rays because of strong X-ray absorption coefficient. This finding opens up a new synthetic method for radical semiconductors and may find applications on extending photoresponsive ranges of perovskites, transition metal sulfides, and other materials.

Lattice engineering for stabilized black FAPbI3 perovskite single crystals for high-resolution x-ray imaging at the lowest dose

Preliminary theoretical analyses indicate that lattice relaxation may be used to release lattice strain in the FAPbI3 perovskite to warrant both high x-ray detection performance and improved stability. Herein, we demonstrate stable black α-phase FAPbI3 single crystals (SCs) realized by lattice engineering via annealing in the ambient atmosphere. The engineered α-FAPbI3 SC detector shows almost all the best figures of merit including a high sensitivity of 4.15 × 105 μC Gyair-1 cm-2, a low detection limit of 1.1 nGyair s-1, a high resolution of 15.9 lp mm-1, and a short response time of 214 μs. We further demonstrate high-definition x-ray imaging at a dose rate below 10 nGyair s-1 on the FAPbI3 SC, indicating a minimal dose-area product of 0.048 mGyair cm2 to the patient for one-time posteroanterior chest diagnosis, which is more than 3000 times lower than the international reference level of 150 mGyair cm2. In addition, the robust long-term stability enables the FAPbI3 SC x-ray detector to work steadily for more than 40 years.

Halide Perovskites Films for Ionizing Radiation Detection: An Overview of Novel Solid-State Devices

Halide perovskites are a novel class of semiconductors that have attracted great interest in recent decades due to their peculiar properties of interest for optoelectronics. In fact, their use ranges from the field of sensors and light emitters to ionizing radiation detectors. Since 2015, ionizing radiation detectors exploiting perovskite films as active media have been developed. Recently, it has also been demonstrated that such devices can be suitable for medical and diagnostic applications. This review collects most of the recent and innovative publications regarding solid-state devices for the detection of X-rays, neutrons, and protons based on perovskite thin and thick films in order to show that this type of material can be used to design a new generation of devices and sensors. Thin and thick films of halide perovskites are indeed excellent candidates for low-cost and large-area device applications, where the film morphology allows the implementation on flexible devices, which is a cutting-edge topic in the sensor sector.

Recent Progress on Wavelength-Selective Perovskite Photodetectors for Image Sensing

Spectral sensing plays a crucial part in imaging technologies, optical communication, and other fields. However, complicated optical elements, such as prisms, interferometric filters, and diffraction grating, are required for commercial multispectral detectors, which hampers their advance toward miniaturization and integration. In recent years, metal halide perovskites have been emerging for optical-component-free wavelength-selective photodetectors (PDs) because of their continuously tunable bandgap, fascinating optoelectronic properties, and simple preparation processes. In this review, recent advances in wavelength-selective perovskite PDs, including narrowband PDs, dual-band PDs, multispectral-recognizable PDs, and X-ray PDs, are highlighted, with an emphasis on device structure designs, working mechanisms, and optoelectronic performances. Meanwhile, the applications of wavelength-selective PDs in image sensing for single-/dual-color imaging, full-color imaging, and X-ray imaging are introduced. Finally, the remaining challenges and perspectives in this emerging field are presented.

Realizing nearly-zero dark current and ultrahigh signal-to-noise ratio perovskite X-ray detector and image array by dark-current-shunting strategy

Although perovskite X-ray detectors have revealed promising properties, their dark currents are usually hundreds of times larger than the practical requirements. Here, we report a detector architecture with a unique shunting electrode working as a blanking unit to suppress dark current, and it theoretically can be reduced to zero. We experimentally fabricate the dark-current-shunting X-ray detector, which exhibits a record-low dark current of 51.1 fA at 5 V mm^-1, a detection limit of 7.84 nGy_air s^-1, and a sensitivity of 1.3 × 10⁴ μC Gy_air^-1 cm^-2. The signal-to-noise ratio of our polycrystalline perovskite-based detector is even outperforming many previously reported state-of-the-art single crystal-based X-ray detectors by serval orders of magnitude. Finally, the proof-of-concept X-ray imaging of a 64 × 64 pixels dark-current-shunting detector array is successfully demonstrated. This work provides a device strategy to fundamentally reduce dark current and enhance the signal-to-noise ratio of X-ray detectors and photodetectors in general.

Recent Development of Halide Perovskite Materials and Devices for Ionizing Radiation Detection

Ionizing radiation such as X-rays and γ-rays has been extensively studied and used in various fields such as medical imaging, radiographic nondestructive testing, nuclear defense, homeland security, and scientific research. Therefore, the detection of such high-energy radiation with high-sensitivity and low-cost-based materials and devices is highly important and desirable. Halide perovskites have emerged as promising candidates for radiation detection due to the large light absorption coefficient, large resistivity, low leakage current, high mobility, and simplicity in synthesis and processing as compared with commercial silicon (Si) and amorphous selenium (a-Se). In this review, we provide an extensive overview of current progress in terms of materials development and corresponding device architectures for radiation detection. We discuss the properties of a plethora of reported compounds involving organic-inorganic hybrid, all-inorganic, all-organic perovskite and antiperovskite structures, as well as the continuous breakthroughs in device architectures, performance, and environmental stability. We focus on the critical advancements of the field in the past few years and we provide valuable insight for the development of next-generation materials and devices for radiation detection and imaging applications.

A-Site Cation Engineering of Ruddlesden-Popper Perovskites for Stable, Sensitive, and Portable Direct Conversion X-ray Imaging Detectors

Perovskite flat-panel X-ray detectors are promising products for realizing low-dose medical imaging, a nondestructive test, and security inspection. However, the perovskite X-ray imager still faces intractable problems such as severe baseline drift, a low signal-to-noise ratio, and rapid performance degradation, which were involved by the notorious intrinsic ion migration of the perovskite functional layer. In this work, sensitive, stable, and portable pixel quasi-two-dimensional (2D) Ruddlesden-Popper (RP) perovskite X-ray imagers were obtained by an advanced solvent-free laminated fabrication approach. A-Site cation engineering of RP perovskites provides a hint for solving the trade-off between stability and detection performance, resulting in a stable pixel X-ray imager that shows a sensitivity of ∼7000 μC Gy_air^-1 cm^-2, a detection limit of 7.8 nGy_air s^-1, and good 2D multipixel X-ray imaging. This work demonstrates both a high-performance, stable X-ray imager and its robust fabrication, paving the way for adopting a RP perovskite imager as novel flat-panel X-ray detectors.

Bulk Heterostructure BA2PbI4/MAPbI3 Perovskites for Suppressed Ion Migration To Achieve Sensitive X-ray Detection Performance

Three-dimensional (3D) lead-halide perovskites with outstanding mobility-lifetime products and large attenuation coefficients for X-ray photons have demonstrated highly sensitive X-ray detection. However, there exists severe ion migration, especially under electrical bias, that results in dark-current drift and poorer device stability. Theoretical analyses suggest that 3D perovskites with two-dimensional (2D) perovskites may mitigate ion migration and reduce the dark current to achieve a drastically lower detection limit, which is badly needed for X-ray diagnostics. A bulk 2D/3D perovskite heterostructure is therefore designed and prepared by hot-pressing a mixture of BA₂PbI₄ and MAPbI₃ particles. Compared with the pure MAPbI₃ pellet, the bulk 2D/3D heterostructure pellet shows much higher resistivity, hence, significantly reduced ion migration and a much smaller dark-current drift of 4.84 × 10^-5 nA cm^-1 s^-1 V^-1, which is much lower than that of the pristine MAPbI₃ pellet, thus demonstrating its effectiveness for the suppression of ion migration. The bulk 2D/3D heterostructure pellet attains an X-ray sensitivity of 2.0 × 10³ μC Gy_air^-1 cm^-2 as well as a lower detection limit of 111.76 nGy s^-1 under 10 V bias. This work provides a successful strategy to prepare X-ray detectors with suppressed ion migration and negligible dark current drift, which will further benefit the development of lead-halide perovskite X-ray detectors.

Halide Perovskite: A Promising Candidate for Next-Generation X-Ray Detectors

In the past decade, metal halide perovskite (HP) has become a superstar semiconductor material due to its great application potential in the photovoltaic and photoelectric fields. In fact, HP initially attracted worldwide attention because of its excellent photovoltaic efficiency. However, HP and its derivatives also show great promise in X-ray detection due to their strong X-ray absorption, high bulk resistivity, suitable optical bandgap, and compatibility with integrated circuits. In this review, the basic working principles and modes of both the direct-type and the indirect-type X-ray detectors are first summarized before discussing the applicability of HP for these two types of detection based on the pros and cons of different perovskites. Furthermore, the authors expand their view to different preparation methods developed for HP including single crystals and polycrystalline materials. Upon systematically analyzing their potential for X-ray detection and photoelectronic characteristics on the basis of different structures and dimensions (0D, 2D, and 3D), recent progress of HPs (mainly polycrystalline) applied to flexible X-ray detection are reviewed, and their practicability and feasibility are discussed. Finally, by reviewing the current research on HP-based X-ray detection, the challenges in this field are identified, and the main directions and prospects of future research are suggested.

Dark current modeling of thick perovskite X-ray detectors

Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10^-9 A/cm² for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (J_T) and the generation-recombination current (J_g-r). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.

Oriented preparation of Large-Area uniform Cs2TeI6 perovskite film for high performance X-ray detector

Large-area flexible perovskite films are attracting widespread research interest for applications in wearable solar cells, portable photodetectors, bendable X-ray imaging detectors and other implantable optoelectronic devices. In this work, a facile mobile platform assisted electrospray method is developed to prepare large-area (100 cm²) lead-free Cs₂TeI₆ film on flexible polyimide substrate. The spraying parameters are coupled with the growth temperature to achieve a dynamic balance. The as-prepared film by optimized process shows high uniformity in grain size, thickness and X-ray response without pinholes and cracks. Moreover, oriented nucleation is more likely to occur on the flexible organic substrates for less growth stress and mismatch stress, leading to preferred (222) plane orientation. X-ray detectors prepared with the films exhibit a resistivity of 1.9 × 10¹¹ Ω·cm, an X-ray sensitivity of 226.8 μC⋅Gy_air^-1⋅cm^-2 and a transient response rise time as fast as 42 ms under 50 kV X-ray at an electrical field of 6.67 × 10³ V·mm^-1. The modified electrospray method shows great potential applications for large-area devices of radiography, solar cell and other optoelectronic devices.

Solution-Processed Perovskite/Metal-Oxide Hybrid X-Ray Detector and Array with Decoupled Electronic and Ionic Transport Pathways

Lead halide perovskites possess heavy elements and excellent mobility-lifetime (µτ) product, becoming desirable candidates for X-ray detectors. However, current perovskite photoconduction detectors (PCDs) with vertical geometry, where electronic signals and mobile ions share the same conduction path, are facing with extremely challenging ion-migration issue. Herein, a hybrid X-ray detector device structure, in which perovskite is vertically stacked onto an indium oxide (In₂ O₃ ) transistor with lateral transport geometry is designed, perovskite mainly acts as X-ray sensitizer to activate In₂ O₃ conduction channel, the actual electrical signal is conducted and collected in the lateral metal-oxide device. With the decoupled ionic and electronic transportation, hybrid detectors are insensitive to the ionic motion of perovskite, hence demonstrating no hysteresis and almost no shifting of baseline that are often observed in PCDs, hybrid detectors also exhibit reduced dark current, improved response time, and four times higher photocurrent signals. Finally, array integration of hybrid detectors and preliminary X-ray imaging is realized. The work provides an effective device strategy in addition to the mere material alternations to attain high-performance perovskite-based X-ray detectors and arrays.

Thick-junction perovskite X-ray detectors: processing and optoelectronic considerations

Metal halide perovskites have attracted increasing attention due to their strong stopping power, defect tolerance, large mobility lifetime product, tunable bandgap and simple single-crystal growth via low-cost solution processes, particularly for ionizing radiation detection. Over the past few years, semiconductor-type X-ray detectors based on a variety of perovskites have been developed, showing impressive progress in achieving high sensitivity and low detection limits. In this study, based on the requirement of material properties for high-performance X-ray detectors, we review various materials used for direct detection and summarize the processing techniques and optoelectronic considerations of thick-junction perovskite X-ray detectors. This review also highlights the key challenges facing perovskite X-ray detectors towards real applications and discusses the opportunities, which are promising to explore and may require more research activities.

Interlayer-Assisted Growth of Si-Based All-Inorganic Perovskite Films via Chemical Vapor Deposition for Sensitive and Stable X-ray Detection

All-inorganic perovskites are considered as preferred materials for next-generation X-ray detectors. However, preparing high-quality thick films by traditional solution-based methods remains challenging due to the low solubility of the precursors. In this work, chemical vapor deposition technology is employed to grow Si-based all-inorganic cesium-lead-bromide perovskite thick films. By introducing a SnO₂ nanocrystal interlayer onto the Si substrate to facilitate the heterogeneous nucleation of the perovskite, we are able to grow high-quality films with a smooth surface and compact grains at a relatively low substrate temperature of 260 °C. The resultant X-ray detectors exhibit a decent sensitivity of 2930 μC Gy_air^-1 cm^-2, a small dark current density of 1.5 nA cm^-2, and a low detection limit of 120 nGy_air s^-1. Moreover, the devices show excellent biasing stability with a record small baseline drift of 4.6 × 10^-9 nA cm^-1 s^-1 V^-1 under a large electric field of 1100 V/cm among all perovskite polycrystalline film-based detectors ever reported.

Energy Transfer Assisted Fast X-ray Detection in Direct/Indirect Hybrid Perovskite Wafer

Metal halide perovskite scintillators encounter unprecedented opportunities in indirect ionizing radiation detection due to their high quantum yields. However, the long scintillation lifetime of microseconds upon irradiation, known as the afterglow phenomenon, obviously limits their fast development. Here, a new type of hybrid X-ray detector wafer combining direct methylamine lead iodide (MAPbI₃ ) semiconductor and indirect zero-dimensional cesium copper iodide (Cs₃ Cu₂ I₅ ) scintillator through low-cost fast tableting processes is reported. Due to the fast energy transfer from Cs₃ Cu₂ I₅ to MAPbI₃ , the device response time to X-rays is dramatically reduced by nearly 30 times to 36.6 ns, which enables fast X-ray detection capability by a large area detector arrays within 1 s. Moreover, Cs₃ Cu₂ I₅ exists at the grain boundaries of MAPbI₃ crystals, and blocks the paths of mobile ions of perovskite, leading to the lowest detectable dose rate of hybrid X-ray detector is thus reduced by 1.5 times compared with control MAPbI₃ direct-type semiconductor, and 10 times compared with the Cs₃ Cu₂ I₅ indirect-type scintillator. The direct/indirect hybrid wafer also exhibits improved operation stability at ambient conditions without any encapsulation. This new kind of hybrid X-ray detectors provides strong competitiveness by combining the advantages of both direct perovskite semiconductors and indirect perovskite scintillators for next-generation products.

Polymer-BiI3 composites for high-performance, room-temperature, direct X-ray detectors

Low-energy X-rays have a predominant role in medical diagnostic applications, grown tremendously during recent Covid-19 pandemic times. Synthesis of stable, PMMA/polystyrene-BiI₃ composites has been done through a facile, low-cost, dry-tumble mixing technique for direct X-ray detector applications. Comparative analysis of structural, optical, and photocurrent responses upon irradiation with low-energy X-rays (30 and 60 kV) ensue that PS-BiI₃ demonstrates high SNR 3300, sensitivity 189 µC Gy^-1 cm^-3 and fast response time 30 ms, at dose rate 1.68 mGy s^-1, affirming the composite to be prospective candidate for low-energy, room-temperature, direct X-ray detectors under low bias conditions.

SUPPLEMENTARY INFORMATION

The online version contains supplementary material available at 10.1557/s43579-022-00185-6.

High-Performance Planar-Type Photodetector Based on Hot-Pressed CsPbBr3 Wafer

Considering the disadvantages of the common methods for CsPbBr₃ single crystal growth including the high cost of the melt method and the low shape controllability of the solution method, a facile hot-pressed (HP) approach has been introduced to prepare CsPbBr₃ wafers. The effects of HP temperature on the phase purity of HP-CsPbBr₃ wafers and the performance of the corresponding photodetectors have been investigated. The HP temperature for preparing phase-pure, shape-regular, and dense CsPbBr₃ wafers has been optimized to be 150 °C, and the HP-CsPbBr₃ wafer based planar-type photodetectors exhibit an ultrasensitive weak light photoresponse. Under the illumination of a 530 nm LED with a light power density of 1.1 μW cm^-2, the responsivity, external quantum efficiency, and detectivity of the devices reach 19.79 A W^-1, 4634%, and 2.14 × 10¹³ Jones, respectively, and a fast response speed with a rise time of 40.5 μs and a fall time of 10.0 μs has been achieved.

Oriented 2D Perovskite Wafers for Anisotropic X-ray Detection through a Fast Tableting Strategy

2D perovskite single crystals have emerged as excellent optoelectronic materials owing to their unique anisotropic properties. However, growing large 2D perovskite single crystals remains challenging and time-consuming. Here, a new composition of lead-free 2D perovskite-4-fluorophenethylammonium bismuth iodide [(F-PEA)₃ BiI₆ ] is reported. An oriented bulk 2D wafer with a large area of 1.33 cm² is obtained by tableting disordered 2D perovskite powders, resulting in anisotropic resistivities of 5 × 10¹⁰ and 2 × 10¹¹  Ω cm in the lateral and vertical directions, respectively. Trivalent Bi³⁺ ions are employed to achieve a stronger ionic bonding energy with I^- ions, which intrinsically suppress the ion-migration effect. Thus, the oriented wafer presents good capabilities in both charge collection and ion-migration suppression under a large applied bias along the out-of-plane direction, making it suitable for low-dosage X-ray detection. The large-area wafer shows a sensitive response to hard X-rays operated at a tube voltage of 120 kV_p with the lowest detectable dose rate of 30 nGy s^-1 . Thus, the fast tableting process is a facile and effective strategy to synthesize large-area, oriented 2D wafers, showing excellent X-ray detection performance and operational stability that are comparable to those of 2D perovskite single crystals.

Competitive Displacement Triggering DBP Photoelectrochemical Aptasensor via Cetyltrimethylammonium Bromide Bridging Aptamer and Perovskite

Here, a label-free perovskite-based photoelectrochemical (PEC) aptasensor was rationally designed for the displacement assay of dibutyl phthalate (DBP), a well-known endocrine disruptor, with the aid of cetyltrimethylammonium bromide (CTAB). In this method, CTAB significantly enhanced the PEC response and humidity resistance of the CH₃NH₃PbI₃ perovskite by forming a protecting layer and passivating the X- and A-sites vacancies of CH₃NH₃PbI₃. In addition, CTAB facilitated the immobilization of an aptamer through van der Waals and hydrophobicity forces, as well as the electrostatic interactions between the phosphate group of the aptamer and the cationic group of CTAB. When exposed to DBP in the affinity solution, the DBP aptamer was released from the electrode because the affinity between DBP and its aptamer competes with the interaction of the aptamer and CTAB. The displacement of the aptamer from the perovskite surface relieves the block effect and thus enhances the photoelectric signal of perovskite. By virtue of the good photoelectrochemical characters of CH₃NH₃PbI₃ and the specific recognition ability of aptamer, the linear range of the PEC sensor was 1.0 × 10^-13 to 1.0 × 10^-8 M and the detection and quantification limits were down to 2.5 × 10^-14 and 8.2 × 10^-14 M (S/N = 3), respectively. This work offers a novel strategy for designing aptasensors for the detection of various targets and exhibits the marvelous potential of organic-inorganic perovskite in the field of PEC analysis.

Nucleation Engineering in Sprayed MA3Bi2I9 Films for Direct-Conversion X-ray Detectors

Metal halide perovskite and its derivatives show great promise in X-ray detection. However, large-scale fabrication of high-quality thick perovskite films is still full of challenges due to the complicated crystal nucleation process that always introduces lots of cracks or pinholes in the final perovskite film. Here, a MA₃Bi₂I₉ film was fabricated by the cost-effective, scalable spraying process, and MACl was used as an additive to effectively tune the crystallization process. As a result, a dense MA₃Bi₂I₉ film constituted by large grains was obtained, which has a high carrier mobility of ∼1 cm² V^-1 s^-1 and a large activation energy (E_a) for ion migration of 0.91 eV. Thanks to the outstanding optoelectronic characteristics, X-ray detectors with a configuration of ITO/MA₃Bi₂I₉/Au show a sensitivity of 35 μC Gy_air^-1 cm^-2 and a limit of detection (LoD) of 0.14 μGy_airs^-1, which is outstanding compared with commercial α-Se detectors.

Applications of Halide Perovskites in X-ray Detection and Imaging

X-ray detection plays an extremely significant function in medical diagnosis, nondestructive testing, safety testing, scientific research, environmental monitoring and other practical applications. However, conventional inorganic semiconductors such as amorphous selenium,...

Durable Flexible Polymer-Encapsulated Cs4PbI6 Thin Film for High Sensitivity X-ray Detection

Because of the extraordinary properties including high atomic numbers and large μτ products, metal halide perovskites have been widely employed and used for radiation detecting. Cs₄PbI₆ material has a high X-ray attenuation coefficient and excellent electrical properties that have a good potential in X-ray detection applications. Here, we have designed a flexible polymer-encapsulated Au/Cs₄PbI₆/Au X-ray detector with outstanding sensitivity of 256.20 μC Gy^-1 cm^-2 irradiated by 30 keV X-ray at 10 V bias, long-time stability, and durable flexibility without obvious degradation after bending for 600 cycles. These features demonstrate that this polymer-encapsulated durable flexible and sensitive X-ray detector could open a new possibility for next-generation radiation applications in dosimeter, imaging technologies.

Sequential Growth of 2D/3D Double-Layer Perovskite Films with Superior X-Ray Detection Performance

Perovskite materials in different dimensions show great potential in direct X-ray detection, but each with limitations stemming from its own intrinsic properties. Particularly, the sensitivity of two-dimensional (2D) perovskites is limited by poor carrier transport while ion migration in three-dimensional (3D) perovskites causes the baseline drifting problem. To circumvent these limitations, herein a double-layer perovskite film is developed with properly aligned energy level, where 2D (PEA)2 MA3 Pb4 I13 (PEA=2-phenylethylammonium, MA=methylammonium) is cascaded with vertically crystallized 3D MAPbI3 . In this new design paradigm, the 3D layer ensures fast carrier transport while the 2D layer mitigates ion migration, thus offering a high sensitivity and a greatly stabilized baseline. Besides, the 2D layer increases the film resistivity and enlarges the energy barrier for hole injection without compromising carrier extraction. Consequently, the double-layer perovskite detector delivers a high sensitivity (1.95 × 104 μC Gyair -1 cm-2 ) and a low detection limit (480 nGyair s-1 ). Also demonstrated is the X-ray imaging capacity using a circuit board as the object. This work opens up a new avenue for enhancing X-ray detection performance via cascade assembly of various perovskites with complementary properties.

Determination of X-ray detection limit and applications in perovskite X-ray detectors

X-ray detection limit and sensitivity are important figure of merits for perovskite X-ray detectors, but literatures lack a valid mathematic expression for determining the lower limit of detection for a perovskite X-ray detector. In this work, we present a thorough analysis and new method for X-ray detection limit determination based on a statistical model that correlates the dark current and the X-ray induced photocurrent with the detection limit. The detection limit can be calculated through the measurement of dark current and sensitivity with an easy-to-follow practice. Alternatively, the detection limit may also be obtained by the measurement of dark current and photocurrent when repeatedly lowering the X-ray dose rate. While the material quality is critical, we show that the device architecture and working mode also have a significant influence on the sensitivity and the detection limit. Our work establishes a fair comparison metrics for material and detector development.

Solvent Free Laminated Fabrication of Lead Halide Perovskites for Sensitive and Stable X-ray Detection

The halide perovskite X-ray detector can meet the urgent needs of low-dose medical imaging by X-rays. However, there is still a pressing challenge in lacking robust methods for large-scale fabrication of high-quality perovskite films with tunable thickness. Here we report a laminated fabrication of polycrystalline MAPbI₃ by using solvent-free liquid perovskite molten-salt (PMS), that offers reduced toxic issue, scalable fabrication, and highly tunability in film thickness. Nylon membrane was chosen as a scaffold for the infiltration of PMS, which simultaneously acts as a physical barrier to suppress the ionic migration in the MAPbI₃-nylon composite (denoted as MAPbI₃-LLP). The enhanced material properties result in good stability and high performance of X-ray detectors that show low detection limit and high sensitivity. Additionally, single gamma-ray photon detection was realized by MAPbI₃-LLP detectors. The promising performance characteristics of such polycrystalline detectors can accelerate the adoption of polycrystalline perovskites in X-ray imaging and gamma-ray detection.

Highly Sensitive and Stable X-ray Detector Based on a 0D Structural Cs4PbI6 Single Crystal

Lead halide perovskite single crystals with a high X-ray stopping power and large μτ product have been successfully used for X-ray detection. However, poor air stability and ionic migration lead to the degradation of the devices for long-term operations. Here, we report a solution-processed lead 0D bulk Cs₄PbI₆ single crystal, which have I atoms in isolated [PbI₆]^4-. This 0D Cs₄PbI₆ single crystal has a μτ product of 9.7 × 10^-4 cm² V^-1 and an activation energy of 321.28 meV. We have fabricated a photoconductor device with a symmetric Au/Cs₄PbI₆/Au sandwich structure, which exhibits a high sensitivity of 451.49 μC Gy^-1 cm^-2 under 30 keV X-ray irradiation at an applied voltage of 30 V. After storing the device in air at room temperature for three months, the device retains nearly the same sensitivity as the original. These results demonstrate that this 0D Cs₄PbI₆ perovskite single crystal has great potential for practical X-ray detection applications.

Single Crystal CdSe X-ray Detectors with Ultra-High Sensitivity and Low Detection Limit

CdSe single crystals (SCs), with a relatively high atomic number, large X-ray absorption coefficients, and high carrier mobility, are expected to provide high-performance detection for X-ray. However, the difficulty of growing high-quality CdSe SC has severely limited its application in X-ray detection. In this work, we develop an unconstrained physical gas phase method and in situ annealing process to grow high-quality CdSe SCs under unconstrained conditions. Using this method, CdSe SCs exhibit natural exposure planes, ultrahigh resistivity of 5.43 × 10¹² to 1.29 × 10¹³ Ω cm and high μτ product of 1.3 × 10^-2 to 1.5 × 10^-2 cm² V^-1. It is also observed that CdSe SC X-ray detectors exhibit a record sensitivity of 2.08 × 10⁵ μC Gy_air^-1 cm^-2 and a low detection limit of 85 nGy_air s^-1, which are both desired in medical diagnostics. Moreover, those devices with different crystal directions provide anisotropic X-ray detection performance. Our findings pave a new avenue to exploit high-performance CdSe SC X-ray detectors.

Designing Ultraflexible Perovskite X-Ray Detectors through Interface Engineering

X-ray detectors play a pivotal role in development and advancement of humankind, from far-reaching impact in medicine to furthering the ability to observe distant objects in outer space. While other electronics show the ability to adapt to flexible and lightweight formats, state-of-the-art X-ray detectors rely on materials requiring bulky and fragile configurations, severely limiting their applications. Lead halide perovskites is one of the most rapidly advancing novel materials with success in the field of semiconductor devices. Here, an ultraflexible, lightweight, and highly conformable passively operated thin film perovskite X-ray detector with a sensitivity as high as 9.3 ± 0.5 µC Gy-1 cm-2 at 0 V and a remarkably low limit of detection of 0.58 ± 0.05 μGy s-1 is presented. Various electron and hole transporting layers accessing their individual impact on the detector performance are evaluated. Moreover, it is shown that this ultrathin form-factor allows for fabrication of devices detecting X-rays equivalently from front and back side.

Enhanced Performance of Perovskite Single-Crystal Photodiodes by Epitaxial Hole Blocking Layer

Introducing hole/electron transporting and blocking layers is considered to enhance the performance of electronic devices based on organic-inorganic hybrid halide perovskite single crystals (PSCs). In many photodiodes, the hole/electron transporting or blocking materials are spin-coated or thermal-evaporated on PSC to fabricate heterojunctions. However, the heterojunction interfaces due to lattice mismatch between hole/electron, transporting or blocking materials and perovskites easily form traps and cracks, which cause noise and leakage current. Besides, these low-mobility transporting layers increase the difficulty of transporting carriers generated by photons to the electrode; hence, they also increase the response time for photo detection. In the present study, MAPbCl₃-MAPbBr_2.5Cl_0.5 heterojunction interfaces were realized by liquid-phase epitaxy, in which MAPbBr_2.5Cl_0.5 PSC acts as an active layer and MAPbCl₃ PSC acts as a hole blocking layer (HBL). Our PIN photodiodes with epitaxial MAPbCl₃ PSC as HBL show better performance in dark current, light responsivity, stability, and response time than the photodiodes with spin-coated organic PCBM as HBL. These results suggest that the heterojunction interface formed between two bulk PSCs with different halide compositions by epitaxy growth is very useful for effectively blocking the injected charges under high external electric field, which could improve the collection of photo-generated carriers and hereby enhance the detection performance of the photodiode. Furthermore, the PIN photodiodes made of PSC with epitaxial HBL show the sensitivities of 7.08 mC Gy_air ^-1 cm^-2, 4.04 mC Gy_air ^-1 cm^-2, and 2.38 mC Gy_air ^-1 cm^-2 for 40-keV, 60-keV, and 80-keV X-ray, respectively.

Efficient X-ray Attenuation Lead-Free AgBi2I7 Halide Rudorffite Alternative for Sensitive and Stable X-ray Detection

The poor attenuation capability of high-energy X-ray photons hinders the application of X-ray detectors in medical and astrophysical areas. Halide-based perovskites are promising candidates for X-ray detection because of their improved sensitivity. However, their inferior attenuation coefficient is still unsatisfactory for broadband X-ray detection. Here, a new kind of X-ray detection material, AgBi₂I₇ rudorffite single crystal (SC), is prepared and applied in X-ray detection for the first time, and it shows a higher attenuation coefficient than halide-based perovskites, commercialized a-Se, and the currently outstanding Cd_0.9Zn_0.1Te (CZT). The AgBi₂I₇ rudorffite SCs possess outstanding electric properties and excellent stability. AgBi₂I₇-SC detectors demonstrate a limit of detection (LoD) of 72 nGy_air s^-1 and a sensitivity of 282.5 μC Gy_air^-1cm^-2 to X-rays and show only a slight performance degradation after ontinuous X-ray irradiation with a total dose of 58 Gy_air. This work opens up a new perspective and broad opportunities for halide rudorffite in X-ray detection.