Defect Engineering of Two-Dimensional Transition-Metal Dichalcogenides: Applications, Challenges, and Opportunities

Development of a microfluidic wearable electrochemical sensor for the non-invasive monitoring of oxidative stress biomarkers in human sweat

Oxidative stress is widely recognized as a pivotal factor contributing to numerous Central Nervous System (CNS) ailments. The concentrations of hydrogen peroxide (H2O2) and phosphorylated proteins within the human body serve as crucial indicators of oxidative stress. As such, the real-time monitoring of H2O2 and phosphorylated proteins in sweat is vital for the early identification, diagnosis, and management of diseases linked to oxidative stress. In this context, we present a novel microfluidic wearable electrochemical sensor by modifying the electrode with Prussian blue (PB) and loading sulfur-rich vacancy-containing molybdenum disulfide (MoS2-X) onto Multi-walled carbon nanotube (CNTs) to form coaxially layered CNTs/MoS2-X, which was then synthesized with highly dispersed titanium dioxide nanoparticles (TiO2) to synthesize CNTs/MoS2-X/TiO2 composites for the detection of human sweat H2O2 and phosphorylated proteins, respectively. This structure, with its sulfur vacancies and coaxial layering, significantly improved sensitivity of electrochemical sensors, allowing it to detect H2O2 in a range of 0.01-1 mM with a detection limit of 4.80 μM, and phosphoproteins in a range of 0.01-1 mg/mL with a threshold of 0.917 μg/mL. Furthermore, the miniature sensor demonstrates outstanding performance in detecting analytes in both simulated and real sweat. Comprehensive biosafety assessments have validated the compatibility of the electrode material, underscoring the potential of sensor as a reliable and non-invasive method for tracking biomarkers linked to CNS disorders. This microfluidic wearable electrochemical biosensor with high performance and biosafety features shows great promise for the development of cutting-edge wearable technology devices for tracking CNS disease indicators.

High efficiency Hg(II) electrochemical detection based on the number of defect engineering on MoS2: Insight in synergistic action of sulfur vacancies and undercoordinated Mo

Defects on nanomaterials can effectively enhance the performance of electrochemical detection, but an excessive number of defects may have an adverse effect. In this study, MoS2 nanosheets were synthesized using a hydrothermal synthesis method. By controlling the calcination temperature, MoS2-7H, calcined at 700 °C under H2/Ar2, exhibited an optimal ratio of "point" defects to "plane" defects, resulting in excellent detection performance for mercury ions (Hg(II)). In general, the sulfur vacancies (SV) and undercoordinated Mo generated after calcination of MoS2 significantly promotes the adsorption process and redox of Hg(II) by increasing surface chemical activity, providing additional adsorption sites and adjusting surface charge status to accelerate the catalytic redox of Hg(II). The prepared MoS2-7H-modified electrode showed a sensitivity of 18.25 μA μM-1 and a low limit of detection (LOD) of 6.60 nM towards Hg(II). MoS2-7H also demonstrated a good anti-interference, stability, and exhibited a strong current response in real water samples. The modulation to obtain appropriate number of defects in MoS2 holds promise as a prospective electrode modification material for the electroanalysis.

Bi-MoSe2 Contacts in the Ultraclean Limit: Closing the Theory-Experiment Loop

Achieving robust electrical contacts is crucial for realizing the promise of monolayer 2D semiconductors such as semiconducting transition metal dichalcogenides (s-TMDs) in electronics. Despite recent breakthroughs, a gap remains between the experimental and theoretical understanding of metal-s-TMDs contacts. This study explores bismuth semimetal contacts to monolayer MoSe2, using a platform that minimizes experimental sources of uncertainty; we combine contact-front and contact-end measurements to measure key parameters like specific resistivity (ρc) and transfer length (Lt). We find that the resistivity of MoSe2 under the contacts is enhanced due to charge transfer that can be modeled using a self-consistent approach. In contrast, ab initio calculations of the interlayer charge transfer rate are inconsistent with the measured value of ρc, highlighting the need for new theoretical approaches.

TEM-processed defect densities in single-layer TMDCs and their substrate-dependent signature in PL and Raman spectroscopy

The optical properties of the direct-bandgap transition metal dichalcogenides (TMDCs) MoS2and WS2are heavily influenced by their atomic defect structure and substrate interaction. In this work we use low-voltage chromatic and spherical aberration (CC/CS)-corrected high-resolution transmission electron microscopy to simultaneously create and image chalcogen vacancies in TMDCs. However, correlating the defect structure, produced and analyzed using transmission electron microscopy (TEM), with optical spectroscopy often presents challenges because of very different fields of view and sample platforms involved. Here we employ a reverse transfer technique to transfer electron-irradiated single-layer MoS2and WS2from the TEM grid to various substrates for subsequent optical examination. The dynamics of defect creation are studied in atomic resolution on a separate sample, which allows to apply the derived statistics to larger irradiated areas on the other samples. The intensity of both the defect-bound exciton peak in photoluminescence (PL) and the defect-inducedLA(M) mode in Raman spectra increase with defect density. The best substrates for defect-density determination by optical spectroscopy are polystyrene for PL and SiC and Si/SiO2for Raman spectroscopy. These investigations represent an important step towards the quantification of defects using solely optical spectroscopy, paving the way for fast, reliable, and automatable optical quality control of optoelectronic devices.

Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS2

Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.

Ultrahigh Responsivity and Robust Semiconducting Fiber Enabled by Molecular Soldering-Governed Defect Engineering for Smart Textile Optoelectronics

Semiconducting fibers (SCFs) are of significant interest to design next-generation wearable and comfortable optoelectronics that seamlessly integrate with textiles. However, the practical applications of current SCFs are always limited by poor optoelectronic performance and low mechanical robustness caused by uncontrollable multiscale structural defects. Herein, a versatile in situ molecular soldering-governed defect engineering strategy is proposed to construct ultrahigh responsivity and robust wet-spun MoS2 SCFs, by using a π-conjugated dithiolated molecule to simultaneously patch microscale sulfur vacancies within MoS2 nanosheets, diminish mesoscale interlayer voids/wrinkles, promote macroscale orientation, build long-range photoelectron percolation bridges, and provide n-doping effect. The derived MoS2 SCFs exhibit over two orders of magnitude higher responsivity (144.3 A W-1) than previously reported fiber photodetectors, 37.3-fold faster photoresponse speed (52 ms) than pristine counterpart, and remarkable bending robustness (retain 94.2% of the initial photocurrent after 50 000 bending-flattening cycles). Such superior robustness and photodetection capacity of MoS2 SCFs further enable large-scale weaving of reliable smart textile optoelectronic systems, such as direction-identifiable wireless light alarming system, modularized mechano-optical communication system, and indoor light-controlled IoT system. This work offers a universal strategy for the scalable production of mechanically robust and high-performance SCFs, opening up exciting possibilities for large-scale integration of wearable optoelectronics.

Defect structure-electronic property correlations in transition metal dichalcogenide grain boundaries

Grain boundaries (Gb) in transition metal dichalcogenides are a rich source of interesting physics as well as a cause of concern because of its impact on electron transport across them in large area electronic device applications. Here, using first principles calculations, we show that beyond the conventional definition of grain boundaries based on misorientation, the defect structure present at the grain boundaries plays a significant role in defining the local electronic properties. We observed that even the standard 5-7 defect ring has differing electronic characteristics depending on its internal configuration. While the 5-7 ring presents shallow defect states, and induce long range strain fields with the local bandgap increasing up to 32.7%, the other commonly observed 4-8 defect rings introduce only mid-gap states, induce smaller strain fields with no observable bandgap change. The results show the seminal character of the individual defect structures at grain boundaries, and that their relative density can be used to determine the overall physico-chemical properties of the grain boundary.

Intrinsically Patterned Two-Dimensional Transition Metal Halides

Patterning and defect engineering are key methods for tuning the properties and enabling distinctive functionalities in two-dimensional (2D) materials. However, generating 2D periodic patterns of point defects in 2D materials, such as vacancy lattices that can serve as antidot lattices, has been elusive until now. Herein, we report on 2D transition metal dihalides epitaxially grown on metal surfaces featuring periodically assembled halogen vacancies that result in alternating coordination of the transition metal atom. Using low-temperature scanning probe microscopy and low-energy electron diffraction, we identified the structural properties of intrinsically patterned FeBr2 and CoBr2 monolayers grown epitaxially on Au(111). Density functional theory reveals that Br vacancies are facilitated by low formation energies, and the formation of a vacancy lattice results in a substantial decrease in the lattice mismatch with the underlying Au(111). We demonstrate that interfacial strain engineering presents a versatile strategy for controlled patterning in two dimensions with atomic precision over several hundred nanometers to solve a long-standing challenge of growing atomically precise antidot lattices. In particular, patterning of 2D materials containing transition metals provides a versatile method to achieve unconventional spin textures with noncollinear spin.

Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage

Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.

Dynamic STEM-EELS for single-atom and defect measurement during electron beam transformations

This study introduces the integration of dynamic computer vision-enabled imaging with electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM). This approach involves real-time discovery and analysis of atomic structures as they form, allowing us to observe the evolution of material properties at the atomic level, capturing transient states traditional techniques often miss. Rapid object detection and action system enhances the efficiency and accuracy of STEM-EELS by autonomously identifying and targeting only areas of interest. This machine learning (ML)-based approach differs from classical ML in that it must be executed on the fly, not using static data. We apply this technology to V-doped MoS2, uncovering insights into defect formation and evolution under electron beam exposure. This approach opens uncharted avenues for exploring and characterizing materials in dynamic states, offering a pathway to increase our understanding of dynamic phenomena in materials under thermal, chemical, and beam stimuli.

Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors

Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.

A DFT study of superior adsorbate-surface bonding at Pt-WSe2 vertically aligned heterostructures upon NO2, SO2, CO2, and H2 interactions

This study investigates the potential of platinum (Pt) decorated single-layer WSe2 (Pt-WSe2) monolayers as high-performance gas sensors for NO2, CO2, SO2, and H2 using first-principles calculations. We quantify the impact of Pt placement (basal plane vs. vertical edge) on WSe2's electronic properties, focusing on changes in bandgap (ΔEg). Pt decoration significantly alters the bandgap, with vertical edge sites (TV-WSe2) exhibiting a drastic reduction (0.062 eV) compared to pristine WSe2 and basal plane decorated structures (TBH: 0.720 eV, TBM: 1.237 eV). This substantial ΔEg reduction in TV-WSe2 suggests a potential enhancement in sensor response. Furthermore, TV-WSe2 displays the strongest binding capacity for all target gases due to a Pt-induced "spillover effect" that elongates adsorbed molecules. Specifically, TV-WSe2 exhibits adsorption energies of - 0.5243 eV (NO2), - 0.5777 eV (CO2), - 0.8391 eV (SO2), and - 0.1261 eV (H2), indicating its enhanced sensitivity. Notably, H2 adsorption on TV-WSe2 shows the highest conductivity modulation, suggesting exceptional H2 sensing capabilities. These findings demonstrate that Pt decoration, particularly along WSe2 vertical edges, significantly enhances gas sensing performance. This paves the way for Pt-WSe2 monolayers as highly selective and sensitive gas sensors for various applications, including environmental monitoring, leak detection, and breath analysis.

Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS2 Stack

Molybdenum disulfide (MoS2) is one of the most intriguing two-dimensional materials, and moreover, its single atomic defects can significantly alter the properties. These defects can be both imaged and engineered using spherical and chromatic aberration-corrected high-resolution transmission electron microscopy (CC/CS-corrected HRTEM). In a few-layer stack, several atoms are vertically aligned in one atomic column. Therefore, it is challenging to determine the positions of missing atoms and the damage cross-section, particularly in the not directly accessible middle layers. In this study, we introduce a technique for extracting subtle intensity differences in CC/CS-corrected HRTEM images. By exploiting the crystal structure of the material, our method discerns chalcogen vacancies even in the middle layer of trilayer MoS2. We found that in trilayer MoS2 the middle layer's damage cross-section is about ten times lower than that in the monolayer. Our findings could be essential for the application of few-layer MoS2 in nanodevices.

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

The investigation and manipulation of valley pseudospin in promising two-dimensional (2D) semiconductors are essential for accelerating the development of valleytronics. Based on first-principles, we herein report that the WSeNH monolayer is a potential 2D valleytronic material. It is found that stable 2D WSeNH exhibits a semiconducting character with broken inversion symmetry, forming a pair of energy-degenerate but inequivalent valleys at the K and K' points. Arising from the strong spin-orbit coupling strength governed by the W-dxy/dx2-y2 orbitals, it exhibits a large valley splitting of 425 meV at the top of the valence band, which makes it highly plausible for generating the attractive valley Hall effect. Moreover, both valley splitting and optical transition energy can be efficiently modulated by external strain. Furthermore, we find that a considerable valley polarization of 23 meV can be readily realized in 2D WSeNH by introducing hydrogen vacancies. These findings not only broaden the family of 2D valleytronic materials but also provide alternative avenues for valley manipulation.

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering

Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.

Photocatalytic toluene oxidation with nickel-mediated cascaded active units over Ni/Bi2WO6 monolayers

Adsorption and activation of C-H bonds by photocatalysts are crucial for the efficient conversion of C-H bonds to produce high-value chemicals. Nevertheless, the delivery of surface-active oxygen species for C-H bond oxygenation inevitably needs to overcome obstacles due to the separated active centers, which suppresses the catalytic efficiency. Herein, Ni dopants are introduced into a monolayer Bi2WO6 to create cascaded active units consisting of unsaturated W atoms and Bi/O frustrated Lewis pairs. Experimental characterizations and density functional theory calculations reveal that these special sites can establish an efficient and controllable C-H bond oxidation process. The activated oxygen species on unsaturated W are readily transferred to the Bi/O sites for C-H bond oxygenation. The catalyst with a Ni mass fraction of 1.8% exhibits excellent toluene conversion rates and high selectivity towards benzaldehyde. This study presents a fascinating strategy for toluene oxidation through the design of efficient cascaded active units.

Machine learning predicted inelasticity in defective two-dimensional transition metal dichalcogenides using SHAP analysis

The manipulation of crystallographic defects in 2H-transition metal dichalcogenides (2H-TMDCs), whether pre- or post-synthesis, has garnered significant interest recently, as it holds the promise of tuning the thermal, chemical, and electronic properties of these materials. However, such desirable improvements often come at the cost of deteriorated elastic and inelastic properties, which may lead to serious concerns considering mechanical reliability issues. Therefore, persistent efforts are needed to explore the effects of energetically favorable vacancies on the mechanical properties of 2D TMDCs for an effective tuning of material properties for versatile applications. In this context, machine learning models trained on data based on molecular models can not only provide fast, efficient material models but also unearth crucial structure-property relations. However, such efforts are at an early stage of development. In this study, machine learning and deep learning techniques are used to analyze the mechanical properties of 2D transition metal dichalcogenides (TMDCs) in both pristine and defect forms. The goal is to predict failure stress, strain to failure, and strength based on chirality and strain. Various crystallographic defects were considered, and extensive molecular dynamics simulations were performed. XGBoost and densely connected neural network (DenseNet) algorithms were used to make accurate state-of-the-art predictions, and comparative evaluation and Shapley value analysis of both models are presented to improve interpretability.

Selective activation of MoS2 grain boundaries for enhanced electrochemical activity

Molybdenum disulfide (MoS2) has emerged as a promising material for catalysis and sustainable energy conversion. However, the inertness of its basal plane to electrochemical reactions poses challenges to the utilization of wafer-scale MoS2 in electrocatalysis. To overcome this limitation, we present a technique that enhances the catalytic activity of continuous MoS2 by preferentially activating its buried grain boundaries (GBs). Through mild UV irradiation, a significant enhancement in GB activity was observed that approaches the values for MoS2 edges, as confirmed by a site-selective photo-deposition technique and micro-electrochemical hydrogen evolution reaction (HER) measurements. Combined spectroscopic characterization and ab-initio simulation demonstrates substitutional oxygen functionalization at the grain boundaries to be the origin of this selective catalytic enhancement by an order of magnitude. Our approach not only improves the density of active sites in MoS2 catalytic processes but yields a new photocatalytic conversion process. By exploiting the difference in electronic structure between activated GBs and the basal plane, homo-compositional junctions were realized that improve the photocatalytic synthesis of hydrogen by 47% and achieve performances beyond the capabilities of other catalytic sites.

Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

Double Superconducting Dome of Quasi Two-Dimensional TaS2 in Non-Centrosymmetric van der Waals Heterostructure

Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.

Revealing Hydrogen Spillover on 1T/2H MoS2 Heterostructures for an Enhanced Hydrogen Evolution Reaction by Scanning Electrochemical Microscopy

The in situ characterization of the heterostructure active sites during the hydrogen evolution reaction (HER) process and the direct elucidation of the corresponding catalytic structure-activity relationships are essential for understanding the catalytic mechanism and designing catalysts with optimized activity. Hence, exploring the underlying reasons behind the exceptional catalytic performance necessitates a detailed analysis. Herein, we employed scanning electrochemical microscopy (SECM) to in situ image the topography and local electrocatalytic activity of 1T/2H MoS2 heterostructures on mixed-phase molybdenum disulfide (MoS2) with 20 nm spatial resolution. Our measurements provide direct data about HER activity, enabling us to differentiate the superior catalytic performance of 1T/2H MoS2 heterostructures compared to other active sites on the MoS2 surface. Combining this spatially resolved electrochemical information with density functional theory calculations and numerical simulations enables us to reveal the existence of hydrogen spillover from the 1T MoS2 surface to 1T/2H MoS2 heterostructures. Furthermore, it has been verified that hydrogen spillover can significantly enhance the electrocatalytic activity of the heterostructures, in addition to its strong electronic interaction. This study not only contributes to the future investigation of electrochemical processes at nanoscale active sites on structurally complex electrocatalysts but also provides new design strategies for improving the catalytic activity of 2D electrocatalysts.

Engineering Symmetry Breaking in Twisted MoS2-MoSe2 Heterostructures for Optimal Thermoelectric Performance

Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.

DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe2 by Differential Phase Contrast Imaging

Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe2 bi- and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.

Intrinsic Defect-Driven Synergistic Synaptic Heterostructures for Gate-Free Neuromorphic Phototransistors

The optoelectronic synaptic devices based on two-dimensional (2D) materials offer great advances for future neuromorphic visual systems with dramatically improved integration density and power efficiency. The effective charge capture and retention are considered as one vital prerequisite to realizing the synaptic memory function. However, the current 2D synaptic devices are predominantly relied on materials with artificially-engineered defects or intricate gate-controlled architectures to realize the charge trapping process. These approaches, unfortunately, suffer from the degradation of pristine materials, rapid device failure, and unnecessary complication of device structures. To address these challenges, an innovative gate-free heterostructure paradigm is introduced herein. The heterostructure presents a distinctive dome-like morphology wherein a defect-rich Fe7S8 core is enveloped snugly by a curved MoS2 dome shell (Fe7S8@MoS2), allowing the realization of effective photocarrier trapping through the intrinsic defects in the adjacent Fe7S8 core. The resultant neuromorphic devices exhibit remarkable light-tunable synaptic behaviors with memory time up to ≈800 s under single optical pulse, thus demonstrating great advances in simulating visual recognition system with significantly improved image recognition efficiency. The emergence of such heterostructures foreshadows a promising trajectory for underpinning future synaptic devices, catalyzing the realization of high-efficiency and intricate visual processing applications.

Probing the Strain Direction-Dependent Nonmonotonic Optical Bandgap Modulation of Layered Violet Phosphorus

Recent theoretical investigations have well-predicted strain-induced nonmonotonic optical band gap variations in low-dimensional materials. However, few two-dimensional (2D) materials are experimentally confirmed to exhibit nonmonotonic optical band gap variation under varying strain. Here, a strain-induced nonmonotonic optical bandgap variation in violet phosphorus (VP) nanosheets is observed, as evidenced by photoluminescence spectroscopy, which is reported in a few other 2D materials in knowledge. The optical bandgap variations are characterized to show the modulation rates of 41 and -24 meV/% with compression and tensile strains, respectively. Remarkably, first-principle calculations predict and clarify the nonmonotonic modulation accurately, highlighting its relationship with the strain direction-dependent asymmetric distribution of conduction band minimum wavefunctions, demonstrating that this unique nonmonotonic optical bandgap modulation is determined by the distinctive crystal structure of VP. This work provides a deep insight into the design of 2D materials toward optoelectronic and photoelectrochemical applications via strain engineering.

Sulfur-Defect-Induced TiS1.94 as a High-Capacity and Long-Life Anode Material for Zinc-Ion Batteries

Aqueous zinc-ion batteries (ZIBs) are competitive among the elective candidates for electrochemical energy storage systems, but the intrinsic drawbacks of zinc metal anodes such as dendrites and corrosion severely hinder their large-scale application. Developing alternative anode materials capable of high reversibility and stability for storing Zn2+ ions is a feasible approach to circumvent the challenge. Herein, a sulfur-defect-induced TiS1.94 (D-TiS1.94) as a promising intercalation anode material for ZIBs is designed. The abundant Zn2+-storage active sites and lower Zn2+ migration barrier induced by sulfur defects endow D-TiS1.94 with a high capacity for Zn2+-storage (219.1 mA h g-1 at 0.05 A g-1) and outstanding rate capability (107.3 mA h g-1 at 5 A g-1). In addition, a slight volume change of 8.1% is identified upon Zn2+ storage, which favors a prolonged cycling life (50.3% capacity remaining in 1500 cycles). More significantly, the D-TiS1.94||ZnxMnO2 full battery demonstrates a high discharge capacity of 155.7 mA h g-1 with a capacity retention of 59.8% in 400 cycles. It has been estimated that the high-capacity, low-operation voltage, and long-life D-TiS1.94 can be a promising component of the ZIB anode material family, and the strategy proposed in this work will provide guidance to the defect engineering of high-performance electrode materials toward energy storage applications.

Fabric-like rhodium-nickel-tungsten oxide nanosheets for highly-efficient electrocatalytic H2 generation in an alkaline electrolyte

Transition-metal based oxides with custom-designed phases are effective oxygen evolution reaction (OER) electrocatalysts. However, their applications in water splitting are limited because of insufficient catalytic performance in hydrogen evolution reaction (HER) in alkaline media. In this work, we engineer fabric-like rhodium-nickel-tungsten oxide nanosheets (Rh2O3-NiWO4) on plasma-treated nickel foam (PNF) with a one-step hydrothermal approach for potential applications as industry-grade HER electrocatalysts. Benefiting from rich active sites exposed on the heterostructure, low hydrogen binding energy on Rh, and enhanced charge delivery rates, Rh2O3-NiWO4/PNF catalyst exhibits superior HER activity than that achieved by a commercially available Pt/C catalyst. This is evidenced by the fact that the overpotentials of Rh2O3-NiWO4/PNF for delivering current densities of 10 (j10) and 1000 (j1000) mA cm-2 in 1.0 M KOH are merely 19 and 293 mV, respectively. Meanwhile, the small Tafel slope (18 mV dec-1) of the optimized catalyst manifests the fast HER kinetics. In addition, Rh2O3-NiWO4/PNF exhibits ultra-stable HER performance, and the current density (j100) only decrease 7.69 % after 100 h chronoamperometric curves (I-t) test. The present work provides a new approach for designing high-performance, low-cost 2D electrocatalysts for H2 production and other clean energy-related applications.

Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity

2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.

Atomically precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal

Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin-orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin-orbit polarons become tunable and eventually become itinerantly negative due to spin-orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Charge transport mechanisms of PbSnSe2 and observation of transition from direct to Fowler-Nordheim tunneling

In this study, we report the observation of various conduction mechanisms in mechanically exfoliated PbSnSe2 based on temperature-dependent current and voltage characteristics. A transition from direct tunneling to Fowler-Nordheim tunneling in PbSnSe2 was observed at 2.63 V. At lower temperatures, the 3D Mott variable range hopping model fits the data, yielding a density of states of ∼8.80 × 1020 eV-1 cm-3 at 2 V. The values of Whop and Rhop were 64 meV and 22.7 nm, respectively, at 250 K. The Poole-Frenkel conduction was observed in the Au/PbSnSe2/Au device and the dielectric constant of PbSnSe2 was calculated to be 1.4. At intermediate voltages, a space charge limited current with an exponential distribution of traps was observed and a trap density of ∼9.53 × 1013 cm-3 and a trap characteristic temperature of 430 K were calculated for the Au/PbSnSe2/Au device.

Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes

The molecule-electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule and the conventional electrodes leads to/ the quenching effect and limits the reversibility of molecular photoswitches. In this work, we developed a strategy of using transition metal dichalcogenides (TMDCs) electrodes to fabricate the thiol azobenzene (TAB) self-assembled monolayers (SAMs) junctions with the eutectic gallium-indium (EGaIn) technique. The current-voltage characteristics of the EGaIn/GaOx //TAB/TMDCs photoswitches showed an almost 100% reversible photoswitching behavior, which increased by ∼28% compared to EGaIn/GaOx //TAB/AuTS photoswitches. Density functional theory (DFT) calculations showed the coupling strength of the TAB-TMDCs electrode decreased by 42% compared to that of the TAB-AuTS electrode, giving rise to improved reversibility. our work demonstrated the feasibility of 2D TMDCs for fabricating SAMs-based photoswitches with unprecedentedly high reversibility.

Quantitative Predictions of the Thermal Conductivity in Transition Metal Dichalcogenides: Impact of Point Defects in MoS2 and WS2 Monolayers

Transition metal dichalcogenides are investigated for various applications at the nanoscale because of their unique combination of properties and dimensionality. For many of the anticipated applications, heat conduction plays an important role. At the same time, these materials often contain relatively large amounts of point defects. Here, we provide a systematic analysis of the impact of intrinsic and selected extrinsic defects on the lattice thermal conductivity of MoS2 and WS2 monolayers. We combine Boltzmann transport theory and Green's function-based T-matrix approach for the calculation of scattering rates. The force constants for the defect configurations are obtained from density functional theory calculations via a regression approach, which allows us to sample a rather large number of defects at a moderate computational cost and to systematically enforce both the translational and rotational acoustic sum rules. The calculated lattice thermal conductivity is in quantitative agreement with the experimental data for heat transport and defect concentrations for both MoS2 and WS2. Crucially, this demonstrates that the strong deviation from a 1/T temperature dependence of the lattice thermal conductivity observed experimentally can be fully explained by the presence of point defects. We furthermore predict the scattering strengths of the intrinsic defects to decrease in the sequence VMo ≈ V2S= > V2S⊥ > VS > Sad in both materials, while the scattering rates for the extrinsic (adatom) defects decrease with increasing mass such that Liad > Naad > Kad. Compared with earlier work, we find that both intrinsic and extrinsic adatoms are relatively weak scatterers. We attribute this difference to the treatment of the translational and rotational acoustic sum rules, which, if not enforced, can lead to spurious contributions in the zero-frequency limit.

Vacancy-mediated inelasticity in two-dimensional vanadium-based dichalcogenides

Amongst the two-dimensional (2D) transition metal dichalcogenide (TMDC) family, VX2 (X = S, and Se) are key members for next-generation electronic, spintronic, and energy storage applications. Structural defects may be introduced in these emerging atomically thin materials during synthesis, which can lead to both desirable and detrimental impacts on the physical and chemical properties. Owing to their brittle behaviour, defects may deteriorate the mechanical properties of 2D TMDCs drastically, causing reliability-related issues critical for long-term device-scale applications. In this context, more than 1600 classical molecular dynamics simulations were performed to obtain estimates of chirality-dependent failure stresses of 2D VX2 under technologically relevant conditions that are encountered in typical industrial and lab-scale experiments. The energy barriers associated with the fracture of defective samples were calculated using a thermal activation-based analytical model. Furthermore, the effect of various concentrations of randomly distributed defects on the mechanical reliability of VX2 samples was explored using two-parameter Weibull statistics. These monolayers were found to possess strong flaw tolerance and high Weibull modulus values, making them promising for flexible electronics and energy storage.

Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi2N4 (M = Cr, Mn, Fe, and Co) monolayers

Through extensive density functional theory (DFT) calculations, our investigation delves into the stability, electrical characteristics, and magnetic behavior of monolayers (MLs) of MSi2N4. Computational analyses indicate intrinsic antiferromagnetic (AFM) orders within the MSi2N4 MLs, as a result of direct exchange interactions among transition metal (M) atoms. We further find that CrSi2N4 and CoSi2N4 MLs with primitive cells (pcells) exhibit half-metallic properties, with respective spin-β electron gaps of 3.661 and 2.021 eV. In contrast, MnSi2N4 and FeSi2N4 MLs with pcells act as semiconductors, having energy gaps of 0.427 and 0.282 eV, respectively. When the SOC is considered, the CrSi2N4, MnSi2N4 and FeSi2N4 MLs are metals, while the CoSi2N4 ML is a semiconductor. Our findings imply the dynamics and thermodynamic stability of MSi2N4 MLs. We have also explored the influence of carrier doping on the electromagnetic attributes of MSi2N4 MLs. Interestingly, charge doping could transform CrSi2N4, MnSi2N4, and CoSi2N4 MLs from their original AFM state into a ferromagnetic (FM) order. Moreover, carrier doping transformed CrSi2N4 and CoSi2N4 MLs from spin-polarized metals to half-metals (HMs). It is of particular note that doping of CrSi2N4 MLs with +0.9 e per pcell or more holes caused a switch in the easy axis (EA) to the [001] axis. The demonstrated intrinsic AFM order, excellent thermodynamic and kinetic stability, adjustable magnetism, and half-metallicity of the MSi2N4 family suggest its promising potential for applications in the realm of spintronics.

Excitonic Rydberg States in a Trilayer to Monolayer H2-Aided CVD-Grown Large-Area MoS2 Film with Excellent UV to Visible Broad Band Photodetection Applications

The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.

Defect engineered magnetism induction and electronic structure modulation in monolayer MoS2

The electronic, magnetic, and optical characteristics of a defective monolayer MoS2 were examined by employing density functional theory (DFT)-based first-principles calculations. The effects of several defects on the electrical, magnetic, and optical properties, including Mo vacancies, MoS3 vacancies, and the substitution of a single Mo atom by two S atoms were studied in this work. Our first-principles calculations revealed that different types of defects produced distinct energy states within the band gap, leading to a band gap reduction after the introduction of various types of defects, which caused a change from semiconducting to metallic behavior. The spin-up and spin-down states were separated in the case of MoS3 vacancy. The total magnetization was ∼ -0.83 μ B /cell, and the absolute magnetization was ∼ 1.23 μ B /cell. Moreover, spin-up states had a 0.45 eV band gap, whereas spin-down states were metallic. Consequently, it can be promising for spin filter applications. It was disclosed that the broadband part of the electromagnetic spectrum has a high absorption coefficient, which is necessary for applications including impurity detection, photodiodes, and solar cells. Designing spintronic and optoelectronic devices will benefit from the modification of the electrical, optical, and magnetic properties by defect engineering of MoS2 monolayers presented here.

Super-Resolution Exciton Imaging of Nanobubbles in 2D Semiconductors with Near-Field Nanophotoluminescence Microscopy

Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, have emerged as important candidate materials for next-generation chip-scale optoelectronic devices with the development of large-scale production techniques, such as chemical vapor deposition (CVD). However, 2D materials need to be transferred to other target substrates after growth, during which various micro- and nanoscale defects, such as nanobubbles, are inevitably generated. These nanodefects not only influence the uniformity of 2D semiconductors but also may significantly alter the local optoelectronic properties of the composed devices. Hence, super-resolution discrimination and characterization of nanodefects are highly demanded. Here, we report a near-field nanophotoluminescence (nano-PL) microscope that can quickly screen nanobubbles and investigate their impact on local excitonic properties of 2D semiconductors by directly visualize the PL emission distribution with a very high spatial resolution of ∼10 nm, far below the optical diffraction limit, and a high speed of 10 ms/point under ambient conditions. By using nano-PL microscopy to map the exciton and trion emission intensity distributions in transferred CVD-grown monolayer tungsten disulfide (1L-WS2) flakes, it is found that the PL intensity decreases by 13.4% as the height of the nanobubble increases by every nanometer, which is mainly caused by the suppression of trion emission due to the strong doping effect from the substrate. In addition to the nanobubbles, other types of nanodefects, such as cracks, stacks, and grain boundaries, can also be characterized. The nano-PL method is proven to be a powerful tool for the nondestructive quality inspection of nanodefects as well as the super-resolution exploration of local optoelectronic properties of 2D materials.

Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control

Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium

Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.

Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS2 and WS2 via Proton Irradiation

It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.

Evaluation of Nanostructured NiS2 Thin Films from a Single-Source Precursor for Flexible Memristive Devices

Herein, we report the first demonstration of a single-step, in situ growth of NiS2 nanostructures from a single-source precursor onto a flexible substrate as a versatile platform for an effective nonvolatile memristor. The low temperature, solution-processed deposition of NiS2 thin films exhibits a wide band gap range, spherical-flower-like morphology with high surface area and porosity, and negligible surface roughness. Moreover, the fabricated Au/NiS2/ITO/PET memristor device reveals reproducible bipolar resistive switching (RS) at low operational voltages under both flat and bending conditions. The flexible device shows stable RS behavior for multiple cycles with a good memory window (∼102) and data retention of up to 104 s. The switching of a device between a high-resistance state and a low-resistance state is attributed to the filamentary conduction based on sulfur ion migration and sulfur vacancies and plays a key role in the outstanding memristive performance of the device. Consequently, this work provides a simple, scalable, solution-processed route to fabricate a flexible device with potential applications in next-generation neuromorphic computing and wearable electronics.

Elucidating the Magnetoelastic Coupling, Pressure-Dependent Magnetic Behavior, and Anomalous Hall Effect in FexTi2S4 Intercalation Sulfides

Transition-metal chalcogenides with intercalated layered structures are interesting systems in material physics due to their attractive electronic and magnetic properties, with applications in the fields of magnetic refrigerators, catalysts, and thermoelectrics, among others. In this work, we studied in detail the structural, electronic, and magnetic properties of (Fe,Ti)-based sulfides with formula FexTi2S4 (x = 0.24, 0.32, and 0.42), prepared as polycrystalline materials under high-pressure conditions. They present a layered Heideite-type crystal structure, as assessed by synchrotron X-ray diffraction. A local structure analysis using Fe K-edge extended X-ray-absorption fine structure (EXAFS) data unveiled a conspicuous contraction of the main Fe-S bond in Fe0.24Ti2S4 at the vicinity of the magnetic transition 60-80 K. We suggest that this anomaly is related to magnetoelastic coupling effects. The EXAFS analysis allowed extraction of the Einstein temperatures (θE), i.e., the phonon contribution to the specific heat, for the two bond pairs Fe-S(1) [θE ≈318 K; 290 K (C/T)] and Fe-Ti(1) [θE ≈218 K; 190 K (C/T)]. In addition to the structural and local vibrational measurements, we probed the magnetic properties using magneto-calorimetry, magnetometry under applied pressure, magnetoresistance (MR), and Hall effect measurements. We observed the appearance of a broad peak in the specific heat around 120 K in the x = 0.42 compound that we associated with an antiferromagnetic ordering electronic transition. We found that the antiferromagnetic transition temperature is pressure and composition sensitive and reduces at 1.2 GPa by ∼12 and ∼3 K, for the members with x = 0.24 and x = 0.42, respectively. Similarly, the saturation magnetization in the ordered phase depends on both pressure and iron content, reducing its value by 50, 90, and 30% for x = 0.24, 0.32, and 0.42, respectively. We observed clear jumps in the magnetic hysteresis loops, MR, and anomalous Hall effect (AHE) below 2 K at fields around 2-4 T. We associated this observation with the metamagnetic transitions; from the Berry-curvature a decoupling parameter of SH = 0.12 V-1 is determined. Comparison of the results on the temperature-dependent magnetization, MR, and AHE elucidates a strong inelastic scattering contribution to the AHE at higher temperatures due to the cluster spin-glass phase.

Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures

The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.

Review of two-dimensional nanomaterials in tribology: Recent developments, challenges and prospects

From our ordinary lives to various mechanical systems, friction and wear are often unavoidable phenomena that are heavily responsible for excessive expenditures of nonrenewable energy, the damages and failures of system movement components, as well as immense economic losses. Thus, achieving low friction and high anti-wear performance is critical for minimization of these adverse factors. Two-dimensional (2D) nanomaterials, including transition metal dichalcogenides, single elements, transition metal carbides, nitrides and carbonitrides, hexagonal boron nitride, and metal-organic frameworks have attracted remarkable interests in friction and wear reduction of various applications, owing to their atomic-thin planar morphologies and tribological potential. In this paper, we systematically review the current tribological progress on 2D nanomaterials when used as lubricant additives, reinforcement phases in the coatings and bulk materials, or a major component of superlubricity system. Additionally, the conclusions and prospects on 2D nanomaterials with the existing drawbacks, challenges and future direction in such tribological fields are briefly provided. Finally, we sincerely hope such a review will offer valuable lights for 2D nanomaterial-related researches dedicated on tribology in the future.

Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials

Defects are prevalent in two-dimensional (2D) materials due to thermal equilibrium and processing kinetics. The presence of various defect types can affect material properties significantly. With the development of the advanced transmission electron microscopy (TEM), the property-related structures could be investigated in multiple dimensions. It produces TEM datasets containing a large amount of information. Traditional data analysis is influenced by the subjectivity of researchers, and manual analysis is inefficient and imprecise. Recent developments in deep learning provide robust methods for the quantitative identification of defects in 2D materials efficiently and precisely. Taking advantage of big data, it breaks the limitations of TEM as a local characterization tool, making TEM an intelligent macroscopic analysis method. In this review, the recent developments in the TEM data analysis of defects in 2D materials using deep learning technology are summarized. Initially, an in-depth examination of the distinctions between TEM and natural images is presented. Subsequently, a comprehensive exploration of TEM data analysis ensues, encompassing denoising, point defects, line defects, planar defects, quantitative analysis, and applications. Furthermore, an exhaustive assessment of the significant obstacles encountered in the accurate identification of distinct structures is also provided.

Solvent-assisted sulfur vacancy engineering method in MoS2 for a neuromorphic synaptic memristor

Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.

Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials

In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.

Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications

Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.

Revealing Redox Behavior of Molybdenum Disulfide and Its Application as Rechargeable Antioxidant Reservoir

Molybdenum disulfide (MoS2) is a representative two-dimensional transition metal dichalcogenide and has a unique electronic structure and associated physicochemical properties. The redox property of MoS2 has recently attracted significant attention from various fields, such as biomedical applications. Intriguingly, MoS2 functions as an antioxidant in certain applications and as a pro-oxidant in others. We use the mediated electrochemical probing method to understand the redox behavior of MoS2. This method reveals that MoS2 (i) has a reversible and fast redox activity at a mild potential (between -0.20 and +0.25 V vs Ag/AgCl), (ii) functions as an antioxidant for molecules that have different redox mechanisms (electron or hydrogen atom transfer), and (iii) is electrochemically or molecularly rechargeable. Finally, we show that MoS2 reduces oxidized molecules more efficiently than the potent natural antioxidant, curcumin. This study enhances our understanding of MoS2 and shows its potential as an advanced antioxidant reservoir.