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Ying Z, Qiao L, Liu B, Gao L, Zhang P. Development of a microfluidic wearable electrochemical sensor for the non-invasive monitoring of oxidative stress biomarkers in human sweat. Biosens Bioelectron 2024; 261:116502. [PMID: 38896980 DOI: 10.1016/j.bios.2024.116502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/09/2024] [Accepted: 06/13/2024] [Indexed: 06/21/2024]
Abstract
Oxidative stress is widely recognized as a pivotal factor contributing to numerous Central Nervous System (CNS) ailments. The concentrations of hydrogen peroxide (H2O2) and phosphorylated proteins within the human body serve as crucial indicators of oxidative stress. As such, the real-time monitoring of H2O2 and phosphorylated proteins in sweat is vital for the early identification, diagnosis, and management of diseases linked to oxidative stress. In this context, we present a novel microfluidic wearable electrochemical sensor by modifying the electrode with Prussian blue (PB) and loading sulfur-rich vacancy-containing molybdenum disulfide (MoS2-X) onto Multi-walled carbon nanotube (CNTs) to form coaxially layered CNTs/MoS2-X, which was then synthesized with highly dispersed titanium dioxide nanoparticles (TiO2) to synthesize CNTs/MoS2-X/TiO2 composites for the detection of human sweat H2O2 and phosphorylated proteins, respectively. This structure, with its sulfur vacancies and coaxial layering, significantly improved sensitivity of electrochemical sensors, allowing it to detect H2O2 in a range of 0.01-1 mM with a detection limit of 4.80 μM, and phosphoproteins in a range of 0.01-1 mg/mL with a threshold of 0.917 μg/mL. Furthermore, the miniature sensor demonstrates outstanding performance in detecting analytes in both simulated and real sweat. Comprehensive biosafety assessments have validated the compatibility of the electrode material, underscoring the potential of sensor as a reliable and non-invasive method for tracking biomarkers linked to CNS disorders. This microfluidic wearable electrochemical biosensor with high performance and biosafety features shows great promise for the development of cutting-edge wearable technology devices for tracking CNS disease indicators.
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Affiliation(s)
- Zhiye Ying
- School of Mechanical Engineering, Qinghai University, Xining, 810016, PR China
| | - Lijuan Qiao
- Research Center of Basic Medical Science, Medical College, Qinghai University, Xining, 810016, PR China
| | - Bingxin Liu
- School of Mechanical Engineering, Qinghai University, Xining, 810016, PR China; Salt Lake Chemical Engineering Research Complex, Qinghai Provincial Key Laboratory of Salt Lake Materials Chemical Engineering, Qinghai University, Xining, 810016, PR China.
| | - Li Gao
- School of Mechanical Engineering, Qinghai University, Xining, 810016, PR China; Salt Lake Chemical Engineering Research Complex, Qinghai Provincial Key Laboratory of Salt Lake Materials Chemical Engineering, Qinghai University, Xining, 810016, PR China.
| | - Peng Zhang
- School of Mechanical Engineering, Qinghai University, Xining, 810016, PR China
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2
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Wang QY, Li HR, Xu H, Tao JM, Li SS. High efficiency Hg(II) electrochemical detection based on the number of defect engineering on MoS 2: Insight in synergistic action of sulfur vacancies and undercoordinated Mo. Anal Chim Acta 2024; 1318:342952. [PMID: 39067907 DOI: 10.1016/j.aca.2024.342952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Revised: 07/04/2024] [Accepted: 07/05/2024] [Indexed: 07/30/2024]
Abstract
Defects on nanomaterials can effectively enhance the performance of electrochemical detection, but an excessive number of defects may have an adverse effect. In this study, MoS2 nanosheets were synthesized using a hydrothermal synthesis method. By controlling the calcination temperature, MoS2-7H, calcined at 700 °C under H2/Ar2, exhibited an optimal ratio of "point" defects to "plane" defects, resulting in excellent detection performance for mercury ions (Hg(II)). In general, the sulfur vacancies (SV) and undercoordinated Mo generated after calcination of MoS2 significantly promotes the adsorption process and redox of Hg(II) by increasing surface chemical activity, providing additional adsorption sites and adjusting surface charge status to accelerate the catalytic redox of Hg(II). The prepared MoS2-7H-modified electrode showed a sensitivity of 18.25 μA μM-1 and a low limit of detection (LOD) of 6.60 nM towards Hg(II). MoS2-7H also demonstrated a good anti-interference, stability, and exhibited a strong current response in real water samples. The modulation to obtain appropriate number of defects in MoS2 holds promise as a prospective electrode modification material for the electroanalysis.
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Affiliation(s)
- Qiu-Yu Wang
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China
| | - Hao-Ran Li
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China
| | - Huan Xu
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China
| | - Jia-Mei Tao
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China
| | - Shan-Shan Li
- Anhui Province Key Laboratory of Pollutant Sensitive Materials and Environmental Remediation, Anhui Province Industrial Generic Technology Research Center for Alumics Materials, School of Physics and Electronic Information, Huaibei Normal University, Huaibei, 235000, PR China.
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3
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Liu Y, Liu S, Wang Z, Al-Bqerat AHM, Zangiabadi A, Perebeinos V, Hone J. Bi-MoSe 2 Contacts in the Ultraclean Limit: Closing the Theory-Experiment Loop. NANO LETTERS 2024. [PMID: 39158041 DOI: 10.1021/acs.nanolett.4c02586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Achieving robust electrical contacts is crucial for realizing the promise of monolayer 2D semiconductors such as semiconducting transition metal dichalcogenides (s-TMDs) in electronics. Despite recent breakthroughs, a gap remains between the experimental and theoretical understanding of metal-s-TMDs contacts. This study explores bismuth semimetal contacts to monolayer MoSe2, using a platform that minimizes experimental sources of uncertainty; we combine contact-front and contact-end measurements to measure key parameters like specific resistivity (ρc) and transfer length (Lt). We find that the resistivity of MoSe2 under the contacts is enhanced due to charge transfer that can be modeled using a self-consistent approach. In contrast, ab initio calculations of the interlayer charge transfer rate are inconsistent with the measured value of ρc, highlighting the need for new theoretical approaches.
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Affiliation(s)
- Yang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
| | | | - Amirali Zangiabadi
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10034, United States
| | - Vasili Perebeinos
- Department of Electrical Engineering, University at Buffalo, Buffalo, New York 14260, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10034, United States
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4
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Moses Badlyan N, Quincke M, Kaiser U, Maultzsch J. TEM-processed defect densities in single-layer TMDCs and their substrate-dependent signature in PL and Raman spectroscopy. NANOTECHNOLOGY 2024; 35:435001. [PMID: 39074489 DOI: 10.1088/1361-6528/ad6875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Accepted: 07/29/2024] [Indexed: 07/31/2024]
Abstract
The optical properties of the direct-bandgap transition metal dichalcogenides (TMDCs) MoS2and WS2are heavily influenced by their atomic defect structure and substrate interaction. In this work we use low-voltage chromatic and spherical aberration (CC/CS)-corrected high-resolution transmission electron microscopy to simultaneously create and image chalcogen vacancies in TMDCs. However, correlating the defect structure, produced and analyzed using transmission electron microscopy (TEM), with optical spectroscopy often presents challenges because of very different fields of view and sample platforms involved. Here we employ a reverse transfer technique to transfer electron-irradiated single-layer MoS2and WS2from the TEM grid to various substrates for subsequent optical examination. The dynamics of defect creation are studied in atomic resolution on a separate sample, which allows to apply the derived statistics to larger irradiated areas on the other samples. The intensity of both the defect-bound exciton peak in photoluminescence (PL) and the defect-inducedLA(M) mode in Raman spectra increase with defect density. The best substrates for defect-density determination by optical spectroscopy are polystyrene for PL and SiC and Si/SiO2for Raman spectroscopy. These investigations represent an important step towards the quantification of defects using solely optical spectroscopy, paving the way for fast, reliable, and automatable optical quality control of optoelectronic devices.
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Affiliation(s)
- Narine Moses Badlyan
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Moritz Quincke
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Ute Kaiser
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Janina Maultzsch
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
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Munson KT, Torsi R, Mathela S, Feidler MA, Lin YC, Robinson JA, Asbury JB. Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS 2. J Phys Chem Lett 2024:7850-7856. [PMID: 39052863 DOI: 10.1021/acs.jpclett.4c01578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (XD) emission from MoS2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS2 layers, quenches XD emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad XD background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.
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Affiliation(s)
- Kyle T Munson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shreya Mathela
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Maxwell A Feidler
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City 300, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - John B Asbury
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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6
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Peng H, Liu T, Zhao Y, Li L, Du P, Li H, Yan F, Zhai T. Ultrahigh Responsivity and Robust Semiconducting Fiber Enabled by Molecular Soldering-Governed Defect Engineering for Smart Textile Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406353. [PMID: 39049581 DOI: 10.1002/adma.202406353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2024] [Revised: 06/18/2024] [Indexed: 07/27/2024]
Abstract
Semiconducting fibers (SCFs) are of significant interest to design next-generation wearable and comfortable optoelectronics that seamlessly integrate with textiles. However, the practical applications of current SCFs are always limited by poor optoelectronic performance and low mechanical robustness caused by uncontrollable multiscale structural defects. Herein, a versatile in situ molecular soldering-governed defect engineering strategy is proposed to construct ultrahigh responsivity and robust wet-spun MoS2 SCFs, by using a π-conjugated dithiolated molecule to simultaneously patch microscale sulfur vacancies within MoS2 nanosheets, diminish mesoscale interlayer voids/wrinkles, promote macroscale orientation, build long-range photoelectron percolation bridges, and provide n-doping effect. The derived MoS2 SCFs exhibit over two orders of magnitude higher responsivity (144.3 A W-1) than previously reported fiber photodetectors, 37.3-fold faster photoresponse speed (52 ms) than pristine counterpart, and remarkable bending robustness (retain 94.2% of the initial photocurrent after 50 000 bending-flattening cycles). Such superior robustness and photodetection capacity of MoS2 SCFs further enable large-scale weaving of reliable smart textile optoelectronic systems, such as direction-identifiable wireless light alarming system, modularized mechano-optical communication system, and indoor light-controlled IoT system. This work offers a universal strategy for the scalable production of mechanically robust and high-performance SCFs, opening up exciting possibilities for large-scale integration of wearable optoelectronics.
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Affiliation(s)
- Hongyun Peng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Liang Li
- Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Peipei Du
- Key Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), Flexible Display Materials and Technology Co-Innovation Centre of Hubei Province, School of Optoelectronic Materials & Technology, Jianghan University, Wuhan, 430056, R. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Key Laboratory of Optoelectronic Chemical Materials and Devices (Ministry of Education), Flexible Display Materials and Technology Co-Innovation Centre of Hubei Province, School of Optoelectronic Materials & Technology, Jianghan University, Wuhan, 430056, R. R. China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
- Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, P. R. China
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7
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Somay S, Balasubramanian K. Defect structure-electronic property correlations in transition metal dichalcogenide grain boundaries. Phys Chem Chem Phys 2024; 26:19787-19794. [PMID: 38985158 DOI: 10.1039/d4cp00959b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Grain boundaries (Gb) in transition metal dichalcogenides are a rich source of interesting physics as well as a cause of concern because of its impact on electron transport across them in large area electronic device applications. Here, using first principles calculations, we show that beyond the conventional definition of grain boundaries based on misorientation, the defect structure present at the grain boundaries plays a significant role in defining the local electronic properties. We observed that even the standard 5-7 defect ring has differing electronic characteristics depending on its internal configuration. While the 5-7 ring presents shallow defect states, and induce long range strain fields with the local bandgap increasing up to 32.7%, the other commonly observed 4-8 defect rings introduce only mid-gap states, induce smaller strain fields with no observable bandgap change. The results show the seminal character of the individual defect structures at grain boundaries, and that their relative density can be used to determine the overall physico-chemical properties of the grain boundary.
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Affiliation(s)
- Srest Somay
- Department of Materials Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India.
| | - Krishna Balasubramanian
- Department of Materials Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India.
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8
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Xiang F, Bisht N, Da B, Mohammed MSG, Neiss C, Görling A, Maier S. Intrinsically Patterned Two-Dimensional Transition Metal Halides. ACS NANO 2024; 18:18870-18879. [PMID: 39001861 DOI: 10.1021/acsnano.3c09580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2024]
Abstract
Patterning and defect engineering are key methods for tuning the properties and enabling distinctive functionalities in two-dimensional (2D) materials. However, generating 2D periodic patterns of point defects in 2D materials, such as vacancy lattices that can serve as antidot lattices, has been elusive until now. Herein, we report on 2D transition metal dihalides epitaxially grown on metal surfaces featuring periodically assembled halogen vacancies that result in alternating coordination of the transition metal atom. Using low-temperature scanning probe microscopy and low-energy electron diffraction, we identified the structural properties of intrinsically patterned FeBr2 and CoBr2 monolayers grown epitaxially on Au(111). Density functional theory reveals that Br vacancies are facilitated by low formation energies, and the formation of a vacancy lattice results in a substantial decrease in the lattice mismatch with the underlying Au(111). We demonstrate that interfacial strain engineering presents a versatile strategy for controlled patterning in two dimensions with atomic precision over several hundred nanometers to solve a long-standing challenge of growing atomically precise antidot lattices. In particular, patterning of 2D materials containing transition metals provides a versatile method to achieve unconventional spin textures with noncollinear spin.
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Affiliation(s)
- Feifei Xiang
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Neeta Bisht
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Binbin Da
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Mohammed S G Mohammed
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Christian Neiss
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Andreas Görling
- Department of Chemistry and Pharmacy, Chair of Theoretical Chemistry, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Sabine Maier
- Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
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9
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Roy S, Joseph A, Zhang X, Bhattacharyya S, Puthirath AB, Biswas A, Tiwary CS, Vajtai R, Ajayan PM. Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage. Chem Rev 2024. [PMID: 39042038 DOI: 10.1021/acs.chemrev.3c00937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Antony Joseph
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Abhijit Biswas
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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10
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Roccapriore KM, Torsi R, Robinson J, Kalinin S, Ziatdinov M. Dynamic STEM-EELS for single-atom and defect measurement during electron beam transformations. SCIENCE ADVANCES 2024; 10:eadn5899. [PMID: 39018401 PMCID: PMC466940 DOI: 10.1126/sciadv.adn5899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2023] [Accepted: 06/11/2024] [Indexed: 07/19/2024]
Abstract
This study introduces the integration of dynamic computer vision-enabled imaging with electron energy loss spectroscopy (EELS) in scanning transmission electron microscopy (STEM). This approach involves real-time discovery and analysis of atomic structures as they form, allowing us to observe the evolution of material properties at the atomic level, capturing transient states traditional techniques often miss. Rapid object detection and action system enhances the efficiency and accuracy of STEM-EELS by autonomously identifying and targeting only areas of interest. This machine learning (ML)-based approach differs from classical ML in that it must be executed on the fly, not using static data. We apply this technology to V-doped MoS2, uncovering insights into defect formation and evolution under electron beam exposure. This approach opens uncharted avenues for exploring and characterizing materials in dynamic states, offering a pathway to increase our understanding of dynamic phenomena in materials under thermal, chemical, and beam stimuli.
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Affiliation(s)
- Kevin M. Roccapriore
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Joshua Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sergei Kalinin
- Department of Materials Science and Engineering, Institute for Advanced Materials and Manufacturing, University of Tennessee, Knoxville, TN 37996, USA
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Maxim Ziatdinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
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11
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Chen HY, Hsu HC, Liang JY, Wu BH, Chen YF, Huang CC, Li MY, Radu IP, Chiu YP. Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors. ACS NANO 2024; 18:17622-17629. [PMID: 38922204 PMCID: PMC11238616 DOI: 10.1021/acsnano.4c02066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.
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Affiliation(s)
- Hao-Yu Chen
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Hung-Chang Hsu
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jhih-Yuan Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Hong Wu
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yi-Feng Chen
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chuan-Chun Huang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yang Li
- Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan
| | - Iuliana P Radu
- Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan
| | - Ya-Ping Chiu
- Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Physics, Academia Sinica, Taipei 115201, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan
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12
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Kushwaha A, Goel N. A DFT study of superior adsorbate-surface bonding at Pt-WSe 2 vertically aligned heterostructures upon NO 2, SO 2, CO 2, and H 2 interactions. Sci Rep 2024; 14:15708. [PMID: 38977755 PMCID: PMC11231162 DOI: 10.1038/s41598-024-65213-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Accepted: 06/18/2024] [Indexed: 07/10/2024] Open
Abstract
This study investigates the potential of platinum (Pt) decorated single-layer WSe2 (Pt-WSe2) monolayers as high-performance gas sensors for NO2, CO2, SO2, and H2 using first-principles calculations. We quantify the impact of Pt placement (basal plane vs. vertical edge) on WSe2's electronic properties, focusing on changes in bandgap (ΔEg). Pt decoration significantly alters the bandgap, with vertical edge sites (TV-WSe2) exhibiting a drastic reduction (0.062 eV) compared to pristine WSe2 and basal plane decorated structures (TBH: 0.720 eV, TBM: 1.237 eV). This substantial ΔEg reduction in TV-WSe2 suggests a potential enhancement in sensor response. Furthermore, TV-WSe2 displays the strongest binding capacity for all target gases due to a Pt-induced "spillover effect" that elongates adsorbed molecules. Specifically, TV-WSe2 exhibits adsorption energies of - 0.5243 eV (NO2), - 0.5777 eV (CO2), - 0.8391 eV (SO2), and - 0.1261 eV (H2), indicating its enhanced sensitivity. Notably, H2 adsorption on TV-WSe2 shows the highest conductivity modulation, suggesting exceptional H2 sensing capabilities. These findings demonstrate that Pt decoration, particularly along WSe2 vertical edges, significantly enhances gas sensing performance. This paves the way for Pt-WSe2 monolayers as highly selective and sensitive gas sensors for various applications, including environmental monitoring, leak detection, and breath analysis.
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Affiliation(s)
- Aditya Kushwaha
- Department of Electronics and Communication Engineering, Netaji Subhas University of Technology, Dwarka, New Delhi, 110078, India
| | - Neeraj Goel
- Department of Electronics and Communication Engineering, Netaji Subhas University of Technology, Dwarka, New Delhi, 110078, India.
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13
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Quincke M, Mundszinger M, Biskupek J, Kaiser U. Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS 2 Stack. NANO LETTERS 2024. [PMID: 38950105 DOI: 10.1021/acs.nanolett.4c02391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Molybdenum disulfide (MoS2) is one of the most intriguing two-dimensional materials, and moreover, its single atomic defects can significantly alter the properties. These defects can be both imaged and engineered using spherical and chromatic aberration-corrected high-resolution transmission electron microscopy (CC/CS-corrected HRTEM). In a few-layer stack, several atoms are vertically aligned in one atomic column. Therefore, it is challenging to determine the positions of missing atoms and the damage cross-section, particularly in the not directly accessible middle layers. In this study, we introduce a technique for extracting subtle intensity differences in CC/CS-corrected HRTEM images. By exploiting the crystal structure of the material, our method discerns chalcogen vacancies even in the middle layer of trilayer MoS2. We found that in trilayer MoS2 the middle layer's damage cross-section is about ten times lower than that in the monolayer. Our findings could be essential for the application of few-layer MoS2 in nanodevices.
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Affiliation(s)
- Moritz Quincke
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Manuel Mundszinger
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Johannes Biskupek
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Ute Kaiser
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
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14
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Wang Z, Han X, Liang Y. Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH. Phys Chem Chem Phys 2024; 26:17148-17154. [PMID: 38847342 DOI: 10.1039/d4cp01533a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
The investigation and manipulation of valley pseudospin in promising two-dimensional (2D) semiconductors are essential for accelerating the development of valleytronics. Based on first-principles, we herein report that the WSeNH monolayer is a potential 2D valleytronic material. It is found that stable 2D WSeNH exhibits a semiconducting character with broken inversion symmetry, forming a pair of energy-degenerate but inequivalent valleys at the K and K' points. Arising from the strong spin-orbit coupling strength governed by the W-dxy/dx2-y2 orbitals, it exhibits a large valley splitting of 425 meV at the top of the valence band, which makes it highly plausible for generating the attractive valley Hall effect. Moreover, both valley splitting and optical transition energy can be efficiently modulated by external strain. Furthermore, we find that a considerable valley polarization of 23 meV can be readily realized in 2D WSeNH by introducing hydrogen vacancies. These findings not only broaden the family of 2D valleytronic materials but also provide alternative avenues for valley manipulation.
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Affiliation(s)
- Ziqi Wang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
| | - Xuening Han
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
| | - Yan Liang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China.
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15
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Dong J, Zhang L, Lau K, Shu Y, Wang S, Fu Z, Wu Z, Liu X, Sa B, Pei J, Zheng J, Zhan H, Wang Q. Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi 2O 2S Nanosheets by Defect Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309595. [PMID: 38152956 DOI: 10.1002/smll.202309595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 12/14/2023] [Indexed: 12/29/2023]
Abstract
Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.
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Affiliation(s)
- Junhao Dong
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Lesong Zhang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Kuenyao Lau
- Institute of Light+X Science and Technology, Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo, Zhejiang, 315211, China
| | - Yu Shu
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Shijin Wang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Zhuang Fu
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Zhanggui Wu
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Xiaofeng Liu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jiajie Pei
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Qianting Wang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
- College of Materials Science and Engineering, Fujian University of Technology, Fuzhou, 350118, China
- School of Resources & Chemical Engineering, Sanming University, Sanming, 365004, China
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16
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Shi Y, Li P, Chen H, Wang Z, Song Y, Tang Y, Lin S, Yu Z, Wu L, Yu JC, Fu X. Photocatalytic toluene oxidation with nickel-mediated cascaded active units over Ni/Bi 2WO 6 monolayers. Nat Commun 2024; 15:4641. [PMID: 38821955 PMCID: PMC11143222 DOI: 10.1038/s41467-024-49005-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Accepted: 05/21/2024] [Indexed: 06/02/2024] Open
Abstract
Adsorption and activation of C-H bonds by photocatalysts are crucial for the efficient conversion of C-H bonds to produce high-value chemicals. Nevertheless, the delivery of surface-active oxygen species for C-H bond oxygenation inevitably needs to overcome obstacles due to the separated active centers, which suppresses the catalytic efficiency. Herein, Ni dopants are introduced into a monolayer Bi2WO6 to create cascaded active units consisting of unsaturated W atoms and Bi/O frustrated Lewis pairs. Experimental characterizations and density functional theory calculations reveal that these special sites can establish an efficient and controllable C-H bond oxidation process. The activated oxygen species on unsaturated W are readily transferred to the Bi/O sites for C-H bond oxygenation. The catalyst with a Ni mass fraction of 1.8% exhibits excellent toluene conversion rates and high selectivity towards benzaldehyde. This study presents a fascinating strategy for toluene oxidation through the design of efficient cascaded active units.
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Affiliation(s)
- Yingzhang Shi
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
- School of Chemistry and Chemical Engineering, Hainan University, Haikou, Hainan, 570228, China
| | - Peng Li
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
| | - Huiling Chen
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
| | - Zhiwen Wang
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
- School of Chemistry and Chemical Engineering, Hainan University, Haikou, Hainan, 570228, China
| | - Yujie Song
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
- School of Chemistry and Chemical Engineering, Hainan University, Haikou, Hainan, 570228, China
| | - Yu Tang
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
| | - Sen Lin
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China.
| | - Zhiyang Yu
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China.
| | - Ling Wu
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China.
| | - Jimmy C Yu
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong, China
| | - Xianzhi Fu
- State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, Fujian, 350116, China
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17
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Anuragi A, Das A, Baski A, Maithani V, Mukherjee S. Machine learning predicted inelasticity in defective two-dimensional transition metal dichalcogenides using SHAP analysis. Phys Chem Chem Phys 2024; 26:15316-15331. [PMID: 38771309 DOI: 10.1039/d4cp00974f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
The manipulation of crystallographic defects in 2H-transition metal dichalcogenides (2H-TMDCs), whether pre- or post-synthesis, has garnered significant interest recently, as it holds the promise of tuning the thermal, chemical, and electronic properties of these materials. However, such desirable improvements often come at the cost of deteriorated elastic and inelastic properties, which may lead to serious concerns considering mechanical reliability issues. Therefore, persistent efforts are needed to explore the effects of energetically favorable vacancies on the mechanical properties of 2D TMDCs for an effective tuning of material properties for versatile applications. In this context, machine learning models trained on data based on molecular models can not only provide fast, efficient material models but also unearth crucial structure-property relations. However, such efforts are at an early stage of development. In this study, machine learning and deep learning techniques are used to analyze the mechanical properties of 2D transition metal dichalcogenides (TMDCs) in both pristine and defect forms. The goal is to predict failure stress, strain to failure, and strength based on chirality and strain. Various crystallographic defects were considered, and extensive molecular dynamics simulations were performed. XGBoost and densely connected neural network (DenseNet) algorithms were used to make accurate state-of-the-art predictions, and comparative evaluation and Shapley value analysis of both models are presented to improve interpretability.
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Affiliation(s)
- Ankit Anuragi
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Ankit Das
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Akash Baski
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Vinay Maithani
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Sankha Mukherjee
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
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18
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Raman R, Muthu J, Yen ZL, Qorbani M, Chen YX, Chen DR, Hofmann M, Hsieh YP. Selective activation of MoS 2 grain boundaries for enhanced electrochemical activity. NANOSCALE HORIZONS 2024; 9:946-955. [PMID: 38456521 DOI: 10.1039/d4nh00005f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Molybdenum disulfide (MoS2) has emerged as a promising material for catalysis and sustainable energy conversion. However, the inertness of its basal plane to electrochemical reactions poses challenges to the utilization of wafer-scale MoS2 in electrocatalysis. To overcome this limitation, we present a technique that enhances the catalytic activity of continuous MoS2 by preferentially activating its buried grain boundaries (GBs). Through mild UV irradiation, a significant enhancement in GB activity was observed that approaches the values for MoS2 edges, as confirmed by a site-selective photo-deposition technique and micro-electrochemical hydrogen evolution reaction (HER) measurements. Combined spectroscopic characterization and ab-initio simulation demonstrates substitutional oxygen functionalization at the grain boundaries to be the origin of this selective catalytic enhancement by an order of magnitude. Our approach not only improves the density of active sites in MoS2 catalytic processes but yields a new photocatalytic conversion process. By exploiting the difference in electronic structure between activated GBs and the basal plane, homo-compositional junctions were realized that improve the photocatalytic synthesis of hydrogen by 47% and achieve performances beyond the capabilities of other catalytic sites.
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Affiliation(s)
- Radha Raman
- Department of Physics, National Central University, Taoyuan 32001, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jeyavelan Muthu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Nanoscience and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 115, Taiwan.
| | - Zhi-Long Yen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Mohammad Qorbani
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Xiang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Ding-Rui Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
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19
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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20
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Yan L, Bu K, Li Z, Zhang Z, Xia W, Li M, Li N, Guan J, Liu X, Ning J, Zhang D, Guo Y, Wang X, Yang W. Double Superconducting Dome of Quasi Two-Dimensional TaS 2 in Non-Centrosymmetric van der Waals Heterostructure. NANO LETTERS 2024; 24:6002-6009. [PMID: 38739273 DOI: 10.1021/acs.nanolett.4c00579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.
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Affiliation(s)
- Limin Yan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Inner Mongolia University of Science and Technology, Baotou 014010, People's Republic of China
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Zhongyang Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Zihan Zhang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mingtao Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Nana Li
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiayi Guan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xuqiang Liu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Jiahao Ning
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Dongzhou Zhang
- GSECARS, University of Chicago, 9700 S. Cass Avenue, Argonne, Illinois 60439, United States
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Xin Wang
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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21
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Wang Z, Liu R, Sun T, Li M, Ran N, Wang D, Wang Z. Revealing Hydrogen Spillover on 1T/2H MoS 2 Heterostructures for an Enhanced Hydrogen Evolution Reaction by Scanning Electrochemical Microscopy. Anal Chem 2024; 96:7618-7625. [PMID: 38687982 DOI: 10.1021/acs.analchem.4c00515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
The in situ characterization of the heterostructure active sites during the hydrogen evolution reaction (HER) process and the direct elucidation of the corresponding catalytic structure-activity relationships are essential for understanding the catalytic mechanism and designing catalysts with optimized activity. Hence, exploring the underlying reasons behind the exceptional catalytic performance necessitates a detailed analysis. Herein, we employed scanning electrochemical microscopy (SECM) to in situ image the topography and local electrocatalytic activity of 1T/2H MoS2 heterostructures on mixed-phase molybdenum disulfide (MoS2) with 20 nm spatial resolution. Our measurements provide direct data about HER activity, enabling us to differentiate the superior catalytic performance of 1T/2H MoS2 heterostructures compared to other active sites on the MoS2 surface. Combining this spatially resolved electrochemical information with density functional theory calculations and numerical simulations enables us to reveal the existence of hydrogen spillover from the 1T MoS2 surface to 1T/2H MoS2 heterostructures. Furthermore, it has been verified that hydrogen spillover can significantly enhance the electrocatalytic activity of the heterostructures, in addition to its strong electronic interaction. This study not only contributes to the future investigation of electrochemical processes at nanoscale active sites on structurally complex electrocatalysts but also provides new design strategies for improving the catalytic activity of 2D electrocatalysts.
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Affiliation(s)
- Zhenyu Wang
- College of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Qingdao Application Technology Innovation Center of Photoelectric Biosensing for Clinical Diagnosis and Treatment, Shandong Sino-Japanese Centre for Collaborative Research of Carbon Nanomaterials, Qingdao University, Qingdao, Shandong 266071, China
| | - Rujia Liu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Tong Sun
- College of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Qingdao Application Technology Innovation Center of Photoelectric Biosensing for Clinical Diagnosis and Treatment, Shandong Sino-Japanese Centre for Collaborative Research of Carbon Nanomaterials, Qingdao University, Qingdao, Shandong 266071, China
| | - Mengrui Li
- College of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Qingdao Application Technology Innovation Center of Photoelectric Biosensing for Clinical Diagnosis and Treatment, Shandong Sino-Japanese Centre for Collaborative Research of Carbon Nanomaterials, Qingdao University, Qingdao, Shandong 266071, China
| | - Nian Ran
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dengchao Wang
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zonghua Wang
- College of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Qingdao Application Technology Innovation Center of Photoelectric Biosensing for Clinical Diagnosis and Treatment, Shandong Sino-Japanese Centre for Collaborative Research of Carbon Nanomaterials, Qingdao University, Qingdao, Shandong 266071, China
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22
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Xiong H, Nie X, Zhao L, Deng S. Engineering Symmetry Breaking in Twisted MoS 2-MoSe 2 Heterostructures for Optimal Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38709893 DOI: 10.1021/acsami.4c03767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.
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Affiliation(s)
- Hanping Xiong
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Xianhua Nie
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Li Zhao
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
| | - Shuai Deng
- State Key Laboratory of Engines, Tianjin University, Tianjin 300350, China
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23
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Groll M, Bürger J, Caltzidis I, Jöns KD, Schmidt WG, Gerstmann U, Lindner JKN. DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe 2 by Differential Phase Contrast Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311635. [PMID: 38703033 DOI: 10.1002/smll.202311635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/02/2024] [Indexed: 05/06/2024]
Abstract
Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe2 bi- and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.
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Affiliation(s)
- Maja Groll
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Julius Bürger
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Ioannis Caltzidis
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Klaus D Jöns
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Wolf Gero Schmidt
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Uwe Gerstmann
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
| | - Jörg K N Lindner
- Department of Physics, University of Paderborn, Warburger Straße 100, 33098, Paderborn, Germany
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24
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Deng Y, Liu S, Ma X, Guo S, Zhai B, Zhang Z, Li M, Yu Y, Hu W, Yang H, Kapitonov Y, Han J, Wu J, Li Y, Zhai T. Intrinsic Defect-Driven Synergistic Synaptic Heterostructures for Gate-Free Neuromorphic Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309940. [PMID: 38373410 DOI: 10.1002/adma.202309940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/28/2024] [Indexed: 02/21/2024]
Abstract
The optoelectronic synaptic devices based on two-dimensional (2D) materials offer great advances for future neuromorphic visual systems with dramatically improved integration density and power efficiency. The effective charge capture and retention are considered as one vital prerequisite to realizing the synaptic memory function. However, the current 2D synaptic devices are predominantly relied on materials with artificially-engineered defects or intricate gate-controlled architectures to realize the charge trapping process. These approaches, unfortunately, suffer from the degradation of pristine materials, rapid device failure, and unnecessary complication of device structures. To address these challenges, an innovative gate-free heterostructure paradigm is introduced herein. The heterostructure presents a distinctive dome-like morphology wherein a defect-rich Fe7S8 core is enveloped snugly by a curved MoS2 dome shell (Fe7S8@MoS2), allowing the realization of effective photocarrier trapping through the intrinsic defects in the adjacent Fe7S8 core. The resultant neuromorphic devices exhibit remarkable light-tunable synaptic behaviors with memory time up to ≈800 s under single optical pulse, thus demonstrating great advances in simulating visual recognition system with significantly improved image recognition efficiency. The emergence of such heterostructures foreshadows a promising trajectory for underpinning future synaptic devices, catalyzing the realization of high-efficiency and intricate visual processing applications.
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Affiliation(s)
- Yao Deng
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaoxi Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shuyang Guo
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, P. R. China
| | - Zihan Zhang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Manshi Li
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yimeng Yu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Wenhua Hu
- School of Computer Science and Artificial Intelligence, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Hui Yang
- Department of Mechanics, School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yury Kapitonov
- Department of Photonics, Saint Petersburg State University, Saint Petersburg, 199034, Russia
| | - Junbo Han
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jinsong Wu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Nanostructure Research Center, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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25
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Wang H, Liu S, Liu Z, Sun Y, Xie D, Ren T. Probing the Strain Direction-Dependent Nonmonotonic Optical Bandgap Modulation of Layered Violet Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305770. [PMID: 38108598 DOI: 10.1002/adma.202305770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 12/08/2023] [Indexed: 12/19/2023]
Abstract
Recent theoretical investigations have well-predicted strain-induced nonmonotonic optical band gap variations in low-dimensional materials. However, few two-dimensional (2D) materials are experimentally confirmed to exhibit nonmonotonic optical band gap variation under varying strain. Here, a strain-induced nonmonotonic optical bandgap variation in violet phosphorus (VP) nanosheets is observed, as evidenced by photoluminescence spectroscopy, which is reported in a few other 2D materials in knowledge. The optical bandgap variations are characterized to show the modulation rates of 41 and -24 meV/% with compression and tensile strains, respectively. Remarkably, first-principle calculations predict and clarify the nonmonotonic modulation accurately, highlighting its relationship with the strain direction-dependent asymmetric distribution of conduction band minimum wavefunctions, demonstrating that this unique nonmonotonic optical bandgap modulation is determined by the distinctive crystal structure of VP. This work provides a deep insight into the design of 2D materials toward optoelectronic and photoelectrochemical applications via strain engineering.
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Affiliation(s)
- Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Sicheng Liu
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zhifang Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tianling Ren
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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26
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Wang C, Zhao C, Pu X, Zeng Y, Wei Y, Cao Y, Chen Z. Sulfur-Defect-Induced TiS 1.94 as a High-Capacity and Long-Life Anode Material for Zinc-Ion Batteries. ACS APPLIED MATERIALS & INTERFACES 2024; 16:17637-17648. [PMID: 38549247 DOI: 10.1021/acsami.4c01311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Aqueous zinc-ion batteries (ZIBs) are competitive among the elective candidates for electrochemical energy storage systems, but the intrinsic drawbacks of zinc metal anodes such as dendrites and corrosion severely hinder their large-scale application. Developing alternative anode materials capable of high reversibility and stability for storing Zn2+ ions is a feasible approach to circumvent the challenge. Herein, a sulfur-defect-induced TiS1.94 (D-TiS1.94) as a promising intercalation anode material for ZIBs is designed. The abundant Zn2+-storage active sites and lower Zn2+ migration barrier induced by sulfur defects endow D-TiS1.94 with a high capacity for Zn2+-storage (219.1 mA h g-1 at 0.05 A g-1) and outstanding rate capability (107.3 mA h g-1 at 5 A g-1). In addition, a slight volume change of 8.1% is identified upon Zn2+ storage, which favors a prolonged cycling life (50.3% capacity remaining in 1500 cycles). More significantly, the D-TiS1.94||ZnxMnO2 full battery demonstrates a high discharge capacity of 155.7 mA h g-1 with a capacity retention of 59.8% in 400 cycles. It has been estimated that the high-capacity, low-operation voltage, and long-life D-TiS1.94 can be a promising component of the ZIB anode material family, and the strategy proposed in this work will provide guidance to the defect engineering of high-performance electrode materials toward energy storage applications.
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Affiliation(s)
- Chunlei Wang
- Key Laboratory of Hydraulic Machinery Transients, Ministry of Education, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Chunyu Zhao
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Xiangjun Pu
- Hubei Key Laboratory of Electrochemical Power Sources, College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yubin Zeng
- Key Laboratory of Hydraulic Machinery Transients, Ministry of Education, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Yingjin Wei
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
| | - Yuliang Cao
- Hubei Key Laboratory of Electrochemical Power Sources, College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Zhongxue Chen
- Key Laboratory of Hydraulic Machinery Transients, Ministry of Education, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
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27
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Liu X, Chen G, Guo Y, Li T, Huang J, Chen W, Ostrikov KK. Fabric-like rhodium-nickel-tungsten oxide nanosheets for highly-efficient electrocatalytic H 2 generation in an alkaline electrolyte. J Colloid Interface Sci 2024; 659:895-904. [PMID: 38219308 DOI: 10.1016/j.jcis.2024.01.060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Revised: 01/05/2024] [Accepted: 01/08/2024] [Indexed: 01/16/2024]
Abstract
Transition-metal based oxides with custom-designed phases are effective oxygen evolution reaction (OER) electrocatalysts. However, their applications in water splitting are limited because of insufficient catalytic performance in hydrogen evolution reaction (HER) in alkaline media. In this work, we engineer fabric-like rhodium-nickel-tungsten oxide nanosheets (Rh2O3-NiWO4) on plasma-treated nickel foam (PNF) with a one-step hydrothermal approach for potential applications as industry-grade HER electrocatalysts. Benefiting from rich active sites exposed on the heterostructure, low hydrogen binding energy on Rh, and enhanced charge delivery rates, Rh2O3-NiWO4/PNF catalyst exhibits superior HER activity than that achieved by a commercially available Pt/C catalyst. This is evidenced by the fact that the overpotentials of Rh2O3-NiWO4/PNF for delivering current densities of 10 (j10) and 1000 (j1000) mA cm-2 in 1.0 M KOH are merely 19 and 293 mV, respectively. Meanwhile, the small Tafel slope (18 mV dec-1) of the optimized catalyst manifests the fast HER kinetics. In addition, Rh2O3-NiWO4/PNF exhibits ultra-stable HER performance, and the current density (j100) only decrease 7.69 % after 100 h chronoamperometric curves (I-t) test. The present work provides a new approach for designing high-performance, low-cost 2D electrocatalysts for H2 production and other clean energy-related applications.
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Affiliation(s)
- Xin Liu
- Stoddart Institute of Molecular Science, Department of Chemistry, Zhejiang University, Hangzhou 310027, PR China
| | - Guangliang Chen
- Department of Materials Engineering, Huzhou University, Huzhou 313000, PR China.
| | - Yingchun Guo
- Department of Materials Engineering, Huzhou University, Huzhou 313000, PR China
| | - Tongtong Li
- School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, PR China.
| | - Jun Huang
- School of Physics and Electronic Information, Gannan Normal University, Ganzhou, Jiangxi 341000, PR China
| | - Wei Chen
- School of Physics and Electronic Information, Gannan Normal University, Ganzhou, Jiangxi 341000, PR China
| | - Kostya Ken Ostrikov
- School of Chemistry and Physics, Centre for Materials Science, Centre for Clean Energy Technologies and Practices, Centre for Waste-free World, Queensland University of Technology (QUT), Brisbane, QLD 4000, Australia
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28
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Chen Y, Liu H, Yu G, Ma C, Xu Z, Zhang J, Zhang C, Chen M, Li D, Zheng W, Luo Z, Yang X, Li K, Yao C, Zhang D, Xu B, Yi J, Yi C, Li B, Zhang H, Zhang Z, Zhu X, Li S, Chen S, Jiang Y, Pan A. Defect Engineering of 2D Semiconductors for Dual Control of Emission and Carrier Polarity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312425. [PMID: 38146671 DOI: 10.1002/adma.202312425] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 12/10/2023] [Indexed: 12/27/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to the inevitable defects during material preparation are great obstacles to their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations and realize it experimentally on WS2 monolayers by doping with IIIA atoms. The doped samples with large sizes possess both giant PLQY enhancement and effective carrier polarity modulation. Surprisingly, the high PL emission maintained even after one year under ambient environment. Moreover, the constructed p-n homojunctions shows high rectification ratio (≈2200), ultrafast response times and excellent stability. Meanwhile, the doping strategy is universally applicable to other TMDCs and dopants. This smart defect engineering strategy not only provides a general scheme to eliminate the negative influence of defects, but also utilize them to achieve desired optoelectronic properties for multifunctional applications.
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Affiliation(s)
- Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Guoliang Yu
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zheyuan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jinding Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Mingxing Chen
- School of Physics and Electronics, Hunan Normal University, Changsha, Hunan, 410081, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Weihao Zheng
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan, 410073, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Kaihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Chen Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Bo Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Hongmei Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Zucheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Siyu Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan, 410082, P. R. China
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29
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Chen H, Xing Y, Tan H, Huang L, Zheng Q, Huang Z, Han X, Hu B, Ye Y, Li Y, Xiao Y, Lei H, Qiu X, Liu E, Yang H, Wang Z, Yan B, Gao HJ. Atomically precise engineering of spin-orbit polarons in a kagome magnetic Weyl semimetal. Nat Commun 2024; 15:2301. [PMID: 38485746 PMCID: PMC10940584 DOI: 10.1038/s41467-024-46729-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2023] [Accepted: 03/07/2024] [Indexed: 03/18/2024] Open
Abstract
Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin-orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin-orbit polarons become tunable and eventually become itinerantly negative due to spin-orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.
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Affiliation(s)
- Hui Chen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yuqing Xing
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hengxin Tan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Li Huang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Qi Zheng
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zihao Huang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xianghe Han
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Bin Hu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuhan Ye
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yan Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Xiao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Hechang Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, PR China
| | - Xianggang Qiu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Enke Liu
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill, MA, 02467, USA
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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30
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Yan Q, Kar S, Chowdhury S, Bansil A. The Case for a Defect Genome Initiative. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303098. [PMID: 38195961 DOI: 10.1002/adma.202303098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 08/12/2023] [Indexed: 01/11/2024]
Abstract
The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.
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Affiliation(s)
- Qimin Yan
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Swastik Kar
- Department of Physics, Northeastern University, Boston, MA 02115, USA
- Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USA
| | - Sugata Chowdhury
- Department of Physics and Astrophysics, Howard University, Washington, DC 20059, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
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31
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Abbas Q, Kazmi SMT, Li C, Xu X, Rafiq MA. Charge transport mechanisms of PbSnSe 2 and observation of transition from direct to Fowler-Nordheim tunneling. RSC Adv 2024; 14:5812-5816. [PMID: 38362072 PMCID: PMC10865302 DOI: 10.1039/d3ra07812d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Accepted: 01/26/2024] [Indexed: 02/17/2024] Open
Abstract
In this study, we report the observation of various conduction mechanisms in mechanically exfoliated PbSnSe2 based on temperature-dependent current and voltage characteristics. A transition from direct tunneling to Fowler-Nordheim tunneling in PbSnSe2 was observed at 2.63 V. At lower temperatures, the 3D Mott variable range hopping model fits the data, yielding a density of states of ∼8.80 × 1020 eV-1 cm-3 at 2 V. The values of Whop and Rhop were 64 meV and 22.7 nm, respectively, at 250 K. The Poole-Frenkel conduction was observed in the Au/PbSnSe2/Au device and the dielectric constant of PbSnSe2 was calculated to be 1.4. At intermediate voltages, a space charge limited current with an exponential distribution of traps was observed and a trap density of ∼9.53 × 1013 cm-3 and a trap characteristic temperature of 430 K were calculated for the Au/PbSnSe2/Au device.
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Affiliation(s)
- Qaisar Abbas
- Condensed Matter Physics Laboratories, Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences PO Nilore Islamabad 45650 Pakistan
| | - Syed Mesam Tamar Kazmi
- Condensed Matter Physics Laboratories, Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences PO Nilore Islamabad 45650 Pakistan
| | - Chuanbo Li
- School of Science, Minzu University of China Beijing 100081 China
| | - Xiulai Xu
- Institute of Physics, Chinese Academy of Sciences Beijing 100190 China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University Beijing 100871 China
| | - M A Rafiq
- Condensed Matter Physics Laboratories, Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences PO Nilore Islamabad 45650 Pakistan
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32
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Chen LC, Shi J, Lu ZX, Lin RJ, Lu TG, Zou YL, Liang QM, Huang R, Shi J, Xiao ZY, Zhang Y, Liu J, Yang Y, Hong W. Highly Reversible Molecular Photoswitches with Transition Metal Dichalcogenides Electrodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305607. [PMID: 37817357 DOI: 10.1002/smll.202305607] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 09/21/2023] [Indexed: 10/12/2023]
Abstract
The molecule-electrode coupling plays an essential role in photoresponsive devices with photochromic molecules, and the strong coupling between the molecule and the conventional electrodes leads to/ the quenching effect and limits the reversibility of molecular photoswitches. In this work, we developed a strategy of using transition metal dichalcogenides (TMDCs) electrodes to fabricate the thiol azobenzene (TAB) self-assembled monolayers (SAMs) junctions with the eutectic gallium-indium (EGaIn) technique. The current-voltage characteristics of the EGaIn/GaOx //TAB/TMDCs photoswitches showed an almost 100% reversible photoswitching behavior, which increased by ∼28% compared to EGaIn/GaOx //TAB/AuTS photoswitches. Density functional theory (DFT) calculations showed the coupling strength of the TAB-TMDCs electrode decreased by 42% compared to that of the TAB-AuTS electrode, giving rise to improved reversibility. our work demonstrated the feasibility of 2D TMDCs for fabricating SAMs-based photoswitches with unprecedentedly high reversibility.
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Affiliation(s)
- Li-Chuan Chen
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Jie Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Zhi-Xing Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Rong-Jian Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Tai-Ge Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yu-Ling Zou
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Qing-Man Liang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Ruiyun Huang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Jia Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Zong-Yuan Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yanxi Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Junyang Liu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Wenjing Hong
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering & Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
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33
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Mahendran S, Carrete J, Isacsson A, Madsen GKH, Erhart P. Quantitative Predictions of the Thermal Conductivity in Transition Metal Dichalcogenides: Impact of Point Defects in MoS 2 and WS 2 Monolayers. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1709-1716. [PMID: 38322774 PMCID: PMC10839904 DOI: 10.1021/acs.jpcc.3c06820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/25/2023] [Accepted: 12/27/2023] [Indexed: 02/08/2024]
Abstract
Transition metal dichalcogenides are investigated for various applications at the nanoscale because of their unique combination of properties and dimensionality. For many of the anticipated applications, heat conduction plays an important role. At the same time, these materials often contain relatively large amounts of point defects. Here, we provide a systematic analysis of the impact of intrinsic and selected extrinsic defects on the lattice thermal conductivity of MoS2 and WS2 monolayers. We combine Boltzmann transport theory and Green's function-based T-matrix approach for the calculation of scattering rates. The force constants for the defect configurations are obtained from density functional theory calculations via a regression approach, which allows us to sample a rather large number of defects at a moderate computational cost and to systematically enforce both the translational and rotational acoustic sum rules. The calculated lattice thermal conductivity is in quantitative agreement with the experimental data for heat transport and defect concentrations for both MoS2 and WS2. Crucially, this demonstrates that the strong deviation from a 1/T temperature dependence of the lattice thermal conductivity observed experimentally can be fully explained by the presence of point defects. We furthermore predict the scattering strengths of the intrinsic defects to decrease in the sequence VMo ≈ V2S= > V2S⊥ > VS > Sad in both materials, while the scattering rates for the extrinsic (adatom) defects decrease with increasing mass such that Liad > Naad > Kad. Compared with earlier work, we find that both intrinsic and extrinsic adatoms are relatively weak scatterers. We attribute this difference to the treatment of the translational and rotational acoustic sum rules, which, if not enforced, can lead to spurious contributions in the zero-frequency limit.
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Affiliation(s)
- Srinivasan Mahendran
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
| | - Jesús Carrete
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, E-50009 Zaragoza, Spain
- Institute
of Materials Chemistry, TU Wien, A-1060 Vienna, Austria
| | - Andreas Isacsson
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
| | | | - Paul Erhart
- Department
of Physics, Chalmers University of Technology, SE-41296 Gothenburg, Sweden
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34
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Baski A, Singh Z, Mukherjee S. Vacancy-mediated inelasticity in two-dimensional vanadium-based dichalcogenides. Phys Chem Chem Phys 2024; 26:4668-4682. [PMID: 38251715 DOI: 10.1039/d3cp04915a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
Amongst the two-dimensional (2D) transition metal dichalcogenide (TMDC) family, VX2 (X = S, and Se) are key members for next-generation electronic, spintronic, and energy storage applications. Structural defects may be introduced in these emerging atomically thin materials during synthesis, which can lead to both desirable and detrimental impacts on the physical and chemical properties. Owing to their brittle behaviour, defects may deteriorate the mechanical properties of 2D TMDCs drastically, causing reliability-related issues critical for long-term device-scale applications. In this context, more than 1600 classical molecular dynamics simulations were performed to obtain estimates of chirality-dependent failure stresses of 2D VX2 under technologically relevant conditions that are encountered in typical industrial and lab-scale experiments. The energy barriers associated with the fracture of defective samples were calculated using a thermal activation-based analytical model. Furthermore, the effect of various concentrations of randomly distributed defects on the mechanical reliability of VX2 samples was explored using two-parameter Weibull statistics. These monolayers were found to possess strong flaw tolerance and high Weibull modulus values, making them promising for flexible electronics and energy storage.
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Affiliation(s)
- Akash Baski
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Zimmi Singh
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
| | - Sankha Mukherjee
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302, West Bengal, India.
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35
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An Z, Lv L, Su Y, Jiang Y, Guan Z. Carrier doping modulates the magnetoelectronic and magnetic anisotropic properties of two-dimensional MSi 2N 4 (M = Cr, Mn, Fe, and Co) monolayers. Phys Chem Chem Phys 2024; 26:4208-4217. [PMID: 38230688 DOI: 10.1039/d3cp05032g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Through extensive density functional theory (DFT) calculations, our investigation delves into the stability, electrical characteristics, and magnetic behavior of monolayers (MLs) of MSi2N4. Computational analyses indicate intrinsic antiferromagnetic (AFM) orders within the MSi2N4 MLs, as a result of direct exchange interactions among transition metal (M) atoms. We further find that CrSi2N4 and CoSi2N4 MLs with primitive cells (pcells) exhibit half-metallic properties, with respective spin-β electron gaps of 3.661 and 2.021 eV. In contrast, MnSi2N4 and FeSi2N4 MLs with pcells act as semiconductors, having energy gaps of 0.427 and 0.282 eV, respectively. When the SOC is considered, the CrSi2N4, MnSi2N4 and FeSi2N4 MLs are metals, while the CoSi2N4 ML is a semiconductor. Our findings imply the dynamics and thermodynamic stability of MSi2N4 MLs. We have also explored the influence of carrier doping on the electromagnetic attributes of MSi2N4 MLs. Interestingly, charge doping could transform CrSi2N4, MnSi2N4, and CoSi2N4 MLs from their original AFM state into a ferromagnetic (FM) order. Moreover, carrier doping transformed CrSi2N4 and CoSi2N4 MLs from spin-polarized metals to half-metals (HMs). It is of particular note that doping of CrSi2N4 MLs with +0.9 e per pcell or more holes caused a switch in the easy axis (EA) to the [001] axis. The demonstrated intrinsic AFM order, excellent thermodynamic and kinetic stability, adjustable magnetism, and half-metallicity of the MSi2N4 family suggest its promising potential for applications in the realm of spintronics.
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Affiliation(s)
- Ziyuan An
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Linhui Lv
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Ya Su
- School of Electrical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
| | - Yanyan Jiang
- Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Zhaoyong Guan
- Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan, Shandong 250100, P. R. China.
- School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, P. R. China
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36
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Mondal S, Basak D. Excitonic Rydberg States in a Trilayer to Monolayer H 2-Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2940-2953. [PMID: 38176105 DOI: 10.1021/acsami.3c15655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.
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Affiliation(s)
- Sourav Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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37
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Afrid SMTS. Defect engineered magnetism induction and electronic structure modulation in monolayer MoS 2. Heliyon 2024; 10:e23384. [PMID: 38163200 PMCID: PMC10755313 DOI: 10.1016/j.heliyon.2023.e23384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 12/01/2023] [Accepted: 12/01/2023] [Indexed: 01/03/2024] Open
Abstract
The electronic, magnetic, and optical characteristics of a defective monolayer MoS2 were examined by employing density functional theory (DFT)-based first-principles calculations. The effects of several defects on the electrical, magnetic, and optical properties, including Mo vacancies, MoS3 vacancies, and the substitution of a single Mo atom by two S atoms were studied in this work. Our first-principles calculations revealed that different types of defects produced distinct energy states within the band gap, leading to a band gap reduction after the introduction of various types of defects, which caused a change from semiconducting to metallic behavior. The spin-up and spin-down states were separated in the case of MoS3 vacancy. The total magnetization was ∼ -0.83 μ B /cell, and the absolute magnetization was ∼ 1.23 μ B /cell. Moreover, spin-up states had a 0.45 eV band gap, whereas spin-down states were metallic. Consequently, it can be promising for spin filter applications. It was disclosed that the broadband part of the electromagnetic spectrum has a high absorption coefficient, which is necessary for applications including impurity detection, photodiodes, and solar cells. Designing spintronic and optoelectronic devices will benefit from the modification of the electrical, optical, and magnetic properties by defect engineering of MoS2 monolayers presented here.
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Affiliation(s)
- Sheikh Mohd. Ta-Seen Afrid
- Department of Electrical and Electronics Engineering, Bangladesh University of Engineering and Technology, West Palashi Campus, Dhaka 1205, Bangladesh
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38
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Huang JT, Bai B, Han YX, Feng PY, Wang XJ, Li XZ, Huang GY, Sun HB. Super-Resolution Exciton Imaging of Nanobubbles in 2D Semiconductors with Near-Field Nanophotoluminescence Microscopy. ACS NANO 2024; 18:272-280. [PMID: 38096138 DOI: 10.1021/acsnano.3c06102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides, have emerged as important candidate materials for next-generation chip-scale optoelectronic devices with the development of large-scale production techniques, such as chemical vapor deposition (CVD). However, 2D materials need to be transferred to other target substrates after growth, during which various micro- and nanoscale defects, such as nanobubbles, are inevitably generated. These nanodefects not only influence the uniformity of 2D semiconductors but also may significantly alter the local optoelectronic properties of the composed devices. Hence, super-resolution discrimination and characterization of nanodefects are highly demanded. Here, we report a near-field nanophotoluminescence (nano-PL) microscope that can quickly screen nanobubbles and investigate their impact on local excitonic properties of 2D semiconductors by directly visualize the PL emission distribution with a very high spatial resolution of ∼10 nm, far below the optical diffraction limit, and a high speed of 10 ms/point under ambient conditions. By using nano-PL microscopy to map the exciton and trion emission intensity distributions in transferred CVD-grown monolayer tungsten disulfide (1L-WS2) flakes, it is found that the PL intensity decreases by 13.4% as the height of the nanobubble increases by every nanometer, which is mainly caused by the suppression of trion emission due to the strong doping effect from the substrate. In addition to the nanobubbles, other types of nanodefects, such as cracks, stacks, and grain boundaries, can also be characterized. The nano-PL method is proven to be a powerful tool for the nondestructive quality inspection of nanodefects as well as the super-resolution exploration of local optoelectronic properties of 2D materials.
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Affiliation(s)
- Jia-Tai Huang
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Benfeng Bai
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Yu-Xiao Han
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Peng-Yi Feng
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Xiao-Jie Wang
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Xiao-Ze Li
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
| | - Guan-Yao Huang
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Beijing Key Laboratory of CO2 Utilization and Reduction Technology, Department of Energy and Power Engineering, Tsinghua University, Beijing 100084, China
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
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39
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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40
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Liu C, Pan J, Yuan Q, Zhu C, Liu J, Ge F, Zhu J, Xie H, Zhou D, Zhang Z, Zhao P, Tian B, Huang W, Wang L. Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305580. [PMID: 37882079 DOI: 10.1002/adma.202305580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Revised: 10/11/2023] [Indexed: 10/27/2023]
Abstract
Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.
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Affiliation(s)
- Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jie Pan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Qihui Yuan
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jijie Zhu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Haitao Xie
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicheng Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wei Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Key Laboratory of Flexible Electronics (KLOFE), Shaanxi Institute of Flexible Electronics (SIFE), Institute of Flexible Electronics (IFE), North-Western Polytechnical University (NPU), Xi'an, 710072, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong, 518107, China
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
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Ozden B, Zhang T, Liu M, Fest A, Pearson DA, Khan E, Uprety S, Razon JE, Cherry J, Fujisawa K, Liu H, Perea-López N, Wang K, Isaacs-Smith T, Park M, Terrones M. Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS 2 and WS 2 via Proton Irradiation. ACS NANO 2023; 17:25101-25117. [PMID: 38052014 DOI: 10.1021/acsnano.3c07752] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
It is critical to understand the laws of quantum mechanics in transformative technologies for computation and quantum information science applications to enable the ongoing second quantum revolution calls. Recently, spin qubits based on point defects have gained great attention, since these qubits can be initiated, selectively controlled, and read out with high precision at ambient temperature. The major challenge in these systems is controllably generating multiqubit systems while properly coupling the defects. To address this issue, we began by tackling the engineering challenges these systems present and understanding the fundamentals of defects. In this regard, we controllably generate defects in MoS2 and WS2 monolayers and tune their physicochemical properties via proton irradiation. We quantitatively discovered that the proton energy could modulate the defects' density and nature; higher defect densities were seen with lower proton irradiation energies. Three distinct defect types were observed: vacancies, antisites, and adatoms. In particular, the creation and manipulation of antisite defects provides an alternative way to create and pattern spin qubits based on point defects. Our results demonstrate that altering the particle irradiation energy can regulate the formation of defects, which can be utilized to modify the properties of 2D materials and create reliable electronic devices.
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Affiliation(s)
- Burcu Ozden
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Tianyi Zhang
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mingzu Liu
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Andres Fest
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Daniel A Pearson
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Ethan Khan
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Sunil Uprety
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Jiffer E Razon
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Javari Cherry
- Engineering and Science Division, Penn State Abington, Abington, Pennsylvania 19001, United States
| | - Kazunori Fujisawa
- Water Environment and Civil Engineering, Shinshu University, Matsumoto, Nagano 390-8621, Japan
| | - He Liu
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nestor Perea-López
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16082, United States
| | - Tamara Isaacs-Smith
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Minseo Park
- Department of Physics, Auburn University, Auburn, Alabama 36849, United States
| | - Mauricio Terrones
- Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- NSF-IUCRC Center for Atomically Thin 1093 Multifunctional Coatings (ATOMIC), The Pennsylvania State University, University Park, Pennsylvania 16082, United States
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42
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Desai T, Goud RSP, Dongale TD, Gurnani C. Evaluation of Nanostructured NiS 2 Thin Films from a Single-Source Precursor for Flexible Memristive Devices. ACS OMEGA 2023; 8:48873-48883. [PMID: 38162788 PMCID: PMC10753740 DOI: 10.1021/acsomega.3c06331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/25/2023] [Revised: 10/18/2023] [Accepted: 11/08/2023] [Indexed: 01/03/2024]
Abstract
Herein, we report the first demonstration of a single-step, in situ growth of NiS2 nanostructures from a single-source precursor onto a flexible substrate as a versatile platform for an effective nonvolatile memristor. The low temperature, solution-processed deposition of NiS2 thin films exhibits a wide band gap range, spherical-flower-like morphology with high surface area and porosity, and negligible surface roughness. Moreover, the fabricated Au/NiS2/ITO/PET memristor device reveals reproducible bipolar resistive switching (RS) at low operational voltages under both flat and bending conditions. The flexible device shows stable RS behavior for multiple cycles with a good memory window (∼102) and data retention of up to 104 s. The switching of a device between a high-resistance state and a low-resistance state is attributed to the filamentary conduction based on sulfur ion migration and sulfur vacancies and plays a key role in the outstanding memristive performance of the device. Consequently, this work provides a simple, scalable, solution-processed route to fabricate a flexible device with potential applications in next-generation neuromorphic computing and wearable electronics.
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Affiliation(s)
- Trishala
R. Desai
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
| | - R. Sai Prasad Goud
- Centre
for Advanced Studies in Electronic Sciences and Technology, University of Hyderabad, Hyderabad 500046, India
| | - Tukaram D. Dongale
- Computational
Electronics and Nanoscience Research Laboratory, School of Nanoscience
and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Chitra Gurnani
- Department
of Chemistry, Ecole Centrale School of Engineering, Mahindra University, Hyderabad 500043, India
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43
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Silva R, Rodrigues JE, Rosa AD, Gainza J, Céspedes E, Nemes NM, Martínez JL, Alonso JA. Elucidating the Magnetoelastic Coupling, Pressure-Dependent Magnetic Behavior, and Anomalous Hall Effect in Fe xTi 2S 4 Intercalation Sulfides. ACS APPLIED MATERIALS & INTERFACES 2023; 15:50290-50301. [PMID: 37862555 PMCID: PMC10722463 DOI: 10.1021/acsami.3c12571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/23/2023] [Accepted: 10/06/2023] [Indexed: 10/22/2023]
Abstract
Transition-metal chalcogenides with intercalated layered structures are interesting systems in material physics due to their attractive electronic and magnetic properties, with applications in the fields of magnetic refrigerators, catalysts, and thermoelectrics, among others. In this work, we studied in detail the structural, electronic, and magnetic properties of (Fe,Ti)-based sulfides with formula FexTi2S4 (x = 0.24, 0.32, and 0.42), prepared as polycrystalline materials under high-pressure conditions. They present a layered Heideite-type crystal structure, as assessed by synchrotron X-ray diffraction. A local structure analysis using Fe K-edge extended X-ray-absorption fine structure (EXAFS) data unveiled a conspicuous contraction of the main Fe-S bond in Fe0.24Ti2S4 at the vicinity of the magnetic transition 60-80 K. We suggest that this anomaly is related to magnetoelastic coupling effects. The EXAFS analysis allowed extraction of the Einstein temperatures (θE), i.e., the phonon contribution to the specific heat, for the two bond pairs Fe-S(1) [θE ≈318 K; 290 K (C/T)] and Fe-Ti(1) [θE ≈218 K; 190 K (C/T)]. In addition to the structural and local vibrational measurements, we probed the magnetic properties using magneto-calorimetry, magnetometry under applied pressure, magnetoresistance (MR), and Hall effect measurements. We observed the appearance of a broad peak in the specific heat around 120 K in the x = 0.42 compound that we associated with an antiferromagnetic ordering electronic transition. We found that the antiferromagnetic transition temperature is pressure and composition sensitive and reduces at 1.2 GPa by ∼12 and ∼3 K, for the members with x = 0.24 and x = 0.42, respectively. Similarly, the saturation magnetization in the ordered phase depends on both pressure and iron content, reducing its value by 50, 90, and 30% for x = 0.24, 0.32, and 0.42, respectively. We observed clear jumps in the magnetic hysteresis loops, MR, and anomalous Hall effect (AHE) below 2 K at fields around 2-4 T. We associated this observation with the metamagnetic transitions; from the Berry-curvature a decoupling parameter of SH = 0.12 V-1 is determined. Comparison of the results on the temperature-dependent magnetization, MR, and AHE elucidates a strong inelastic scattering contribution to the AHE at higher temperatures due to the cluster spin-glass phase.
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Affiliation(s)
- Romualdo
S. Silva
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
| | - João E. Rodrigues
- European
Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Angelika D. Rosa
- European
Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Javier Gainza
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
| | - Eva Céspedes
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
| | - Norbert M. Nemes
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
- Departamento
Física de Materiales, Universidad
Complutense de Madrid, E-28040 Madrid, Spain
| | - José L. Martínez
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
| | - José A. Alonso
- Instituto
de Ciencia de Materiales de Madrid (ICMM), CSIC, E-28049 Madrid, Spain
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44
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Li Z, Zhang Z, Zhou X. Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305234. [PMID: 37394705 DOI: 10.1002/smll.202305234] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Indexed: 07/04/2023]
Abstract
The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.
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Affiliation(s)
- Zejun Li
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
- Purple Mountain Laboratories, Nanjing, 211111, China
| | - Zhi Zhang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing, 211189, China
| | - Xiaoli Zhou
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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45
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Wang R, Zhang F, Yang K, Xiong Y, Tang J, Chen H, Duan M, Li Z, Zhang H, Xiong B. Review of two-dimensional nanomaterials in tribology: Recent developments, challenges and prospects. Adv Colloid Interface Sci 2023; 321:103004. [PMID: 37837702 DOI: 10.1016/j.cis.2023.103004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 09/16/2023] [Accepted: 09/22/2023] [Indexed: 10/16/2023]
Abstract
From our ordinary lives to various mechanical systems, friction and wear are often unavoidable phenomena that are heavily responsible for excessive expenditures of nonrenewable energy, the damages and failures of system movement components, as well as immense economic losses. Thus, achieving low friction and high anti-wear performance is critical for minimization of these adverse factors. Two-dimensional (2D) nanomaterials, including transition metal dichalcogenides, single elements, transition metal carbides, nitrides and carbonitrides, hexagonal boron nitride, and metal-organic frameworks have attracted remarkable interests in friction and wear reduction of various applications, owing to their atomic-thin planar morphologies and tribological potential. In this paper, we systematically review the current tribological progress on 2D nanomaterials when used as lubricant additives, reinforcement phases in the coatings and bulk materials, or a major component of superlubricity system. Additionally, the conclusions and prospects on 2D nanomaterials with the existing drawbacks, challenges and future direction in such tribological fields are briefly provided. Finally, we sincerely hope such a review will offer valuable lights for 2D nanomaterial-related researches dedicated on tribology in the future.
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Affiliation(s)
- Ruili Wang
- Faculty of Engineering, Huanghe Science and Technology University, Zhengzhou 450000, China
| | - Feizhi Zhang
- Hunan Province Key Laboratory of Materials Surface/Interface Science & Technology, Central South University of Forestry & Technology, Changsha 410004, China; Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China.
| | - Kang Yang
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China.
| | - Yahui Xiong
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Jun Tang
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Hao Chen
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Mengchen Duan
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Zhenjie Li
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Honglei Zhang
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
| | - Bangying Xiong
- Department of Mechanical Engineering, Anyang Institute of Technology, Avenue West of Yellow River, Anyang 455000, China
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46
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Gui C, Zhang Z, Li Z, Luo C, Xia J, Wu X, Chu J. Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials. iScience 2023; 26:107982. [PMID: 37810254 PMCID: PMC10551659 DOI: 10.1016/j.isci.2023.107982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023] Open
Abstract
Defects are prevalent in two-dimensional (2D) materials due to thermal equilibrium and processing kinetics. The presence of various defect types can affect material properties significantly. With the development of the advanced transmission electron microscopy (TEM), the property-related structures could be investigated in multiple dimensions. It produces TEM datasets containing a large amount of information. Traditional data analysis is influenced by the subjectivity of researchers, and manual analysis is inefficient and imprecise. Recent developments in deep learning provide robust methods for the quantitative identification of defects in 2D materials efficiently and precisely. Taking advantage of big data, it breaks the limitations of TEM as a local characterization tool, making TEM an intelligent macroscopic analysis method. In this review, the recent developments in the TEM data analysis of defects in 2D materials using deep learning technology are summarized. Initially, an in-depth examination of the distinctions between TEM and natural images is presented. Subsequently, a comprehensive exploration of TEM data analysis ensues, encompassing denoising, point defects, line defects, planar defects, quantitative analysis, and applications. Furthermore, an exhaustive assessment of the significant obstacles encountered in the accurate identification of distinct structures is also provided.
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Affiliation(s)
- Chen Gui
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zhihao Zhang
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zongyi Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Chen Luo
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Jiang Xia
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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47
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Kim J, Im C, Lee C, Hwang J, Jang H, Lee JH, Jin M, Lee H, Kim J, Sung J, Kim YS, Lee E. Solvent-assisted sulfur vacancy engineering method in MoS 2 for a neuromorphic synaptic memristor. NANOSCALE HORIZONS 2023; 8:1417-1427. [PMID: 37538027 DOI: 10.1039/d3nh00201b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.
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Affiliation(s)
- Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
| | - Changik Im
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Chan Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jinwoo Hwang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Jae Hak Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Minho Jin
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Haeyeon Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junyoung Kim
- Inspection Business Unit (IBU), Onto Innovation, 4900 W 78th St, Bloomington, MN 55435, USA
| | - Junho Sung
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Youn Sang Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Advanced Institutes of Convergence Technology, Gwanggyo-ro 145, Yeongtong-gu, Suwon, 16229, Republic of Korea
| | - Eunho Lee
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
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48
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He Q, Sheng B, Zhu K, Zhou Y, Qiao S, Wang Z, Song L. Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials. Chem Rev 2023; 123:10750-10807. [PMID: 37581572 DOI: 10.1021/acs.chemrev.3c00389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.
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Affiliation(s)
- Qun He
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Beibei Sheng
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Kefu Zhu
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Yuzhu Zhou
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Sicong Qiao
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Zhouxin Wang
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
- Zhejiang Institute of Photonelectronics, Jinhua, Zhejiang 321004, China
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49
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Chiu CH, Chen YT, Shen JL. Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications. NANOTECHNOLOGY 2023; 34:482001. [PMID: 37607498 DOI: 10.1088/1361-6528/acf29c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 08/21/2023] [Indexed: 08/24/2023]
Abstract
Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.
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Affiliation(s)
- Ching-Hsueh Chiu
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Yu-Ting Chen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Ji-Lin Shen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
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Kang M, Chai K, Lee S, Oh JH, Bae JS, Payne GF. Revealing Redox Behavior of Molybdenum Disulfide and Its Application as Rechargeable Antioxidant Reservoir. ACS APPLIED MATERIALS & INTERFACES 2023; 15:41362-41372. [PMID: 37610347 DOI: 10.1021/acsami.3c08659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
Molybdenum disulfide (MoS2) is a representative two-dimensional transition metal dichalcogenide and has a unique electronic structure and associated physicochemical properties. The redox property of MoS2 has recently attracted significant attention from various fields, such as biomedical applications. Intriguingly, MoS2 functions as an antioxidant in certain applications and as a pro-oxidant in others. We use the mediated electrochemical probing method to understand the redox behavior of MoS2. This method reveals that MoS2 (i) has a reversible and fast redox activity at a mild potential (between -0.20 and +0.25 V vs Ag/AgCl), (ii) functions as an antioxidant for molecules that have different redox mechanisms (electron or hydrogen atom transfer), and (iii) is electrochemically or molecularly rechargeable. Finally, we show that MoS2 reduces oxidized molecules more efficiently than the potent natural antioxidant, curcumin. This study enhances our understanding of MoS2 and shows its potential as an advanced antioxidant reservoir.
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Affiliation(s)
- Mijeong Kang
- Department of Optics and Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Kyunghwan Chai
- Department of Optics and Mechatronics Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Seunghun Lee
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Ju Hyun Oh
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Jong-Seong Bae
- Busan Center, Korea Basic Science Institute, Busan 46742, Republic of Korea
| | - Gregory F Payne
- Institute for Bioscience and Biotechnology Research, University of Maryland, College Park, Maryland 20742, United States
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