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Wang X, Niu G, Jiang J, Sui L, Zeng X, Liu X, Zhang Y, Wu G, Yuan K, Yang X. Modulating Carrier Dynamics in PdSe 2: The Role of Pressure in Electronic and Phononic Interactions. NANO LETTERS 2024; 24:9058-9064. [PMID: 39007901 DOI: 10.1021/acs.nanolett.4c02300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/16/2024]
Abstract
PdSe2 is a puckered transition metal dichalcogenide that has been reported to undergo a two-dimensional to three-dimensional structural transition under pressure. Here, we investigated the electronic and phononic evolution of PdSe2 under high pressure using pump-probe spectroscopy. We observed the electronic intraband and interband transitions occurring in the d orbitals of Pd, revealing the disappearance of the Jahn-Teller effect under high pressure. Furthermore, we found that the decay rates of interband recombination and intraband relaxation lifetimes change at 3 and 7 GPa, respectively. First-principles calculations suggest that the bandgap closure slows the decay rate of interband recombination after 3 GPa, while the saturation of phonon-phonon scattering is the main reason for the relatively constant intraband relaxation lifetime. Our work provides a novel perspective for understanding the evolution of the electron and modulation of the carrier dynamics by phonons under pressure.
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Affiliation(s)
- Xiaowei Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Guangming Niu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- Marine Engineering College, Dalian Maritime University, Dalian 116026, China
| | - Jutao Jiang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- University of the Chinese Academy of Sciences, Beijing 100039, China
| | - Laizhi Sui
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
| | - Xiangyu Zeng
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
| | - Xin Liu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- Science College, Dalian Maritime University, Dalian 116026, China
| | - Yutong Zhang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
| | - Guorong Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
| | - Kaijun Yuan
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
| | - Xueming Yang
- State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
- Department of Chemistry, College of Science, Southern University of Science and Technology, Shenzhen 518055, China
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Pei S, Zhang Z, Jiao C, Wang Z, Lv J, Zhang Y, Huang M, Wang Y, Wang Z, Xia J. Quantitative regulation of electron-phonon coupling. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:078001. [PMID: 38957891 DOI: 10.1088/1361-6633/ad4fbd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Accepted: 05/23/2024] [Indexed: 07/04/2024]
Abstract
Electron-phonon (e-p) coupling plays a crucial role in various physical phenomena, and regulation of e-p coupling is vital for the exploration and design of high-performance materials. However, the current research on this topic lacks accurate quantification, hindering further understanding of the underlying physical processes and its applications. In this work, we demonstrate quantitative regulation of e-p coupling, by pressure engineering andin-situspectroscopy. We successfully observe both a distinct vibrational mode and a strong Stokes shift in layered CrBr3, which are clear signatures of e-p coupling. This allows us to achieve precise quantification of the Huang-Rhys factorSat the actual sample temperature, thus accurately determining the e-p coupling strength. We further reveal that pressure efficiently regulates the e-p coupling in CrBr3, evidenced by a remarkable 40% increase inSvalue. Our results offer an approach for quantifying and modulating e-p coupling, which can be leveraged for exploring and designing functional materials with targeted e-p coupling strengths.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zhenyu Wang
- International Center of Future Science, College of Physics, Jilin University, Changchun 130012, People's Republic of China
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Jian Lv
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Yujun Zhang
- School of Physics and Astronomy and Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, People's Republic of China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Yanchao Wang
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
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Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
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4
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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Botella R, Cao W, Celis J, Fernández-Catalá J, Greco R, Lu L, Pankratova V, Temerov F. Activating two-dimensional semiconductors for photocatalysis: a cross-dimensional strategy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:141501. [PMID: 38086082 DOI: 10.1088/1361-648x/ad14c8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 12/12/2023] [Indexed: 01/05/2024]
Abstract
The emerging two-dimensional (2D) semiconductors substantially extend materials bases for versatile applications such as semiconductor photocatalysis demanding semiconductive matrices and large surface areas. The dimensionality, while endowing 2D semiconductors the unique properties to host photocatalytic functionality of pollutant removal and hydrogen evolution, hurdles the activation paths to form heterogenous photocatalysts where the photochemical processes are normally superior over these on the mono-compositional counterparts. In this perspective, we present a cross-dimensional strategy to employ thenD (n= 0-2) clusters or nanomaterials as activation partners to boost the photocatalytic activities of the 2D semiconductors. The formation principles of heterogenous photocatalysts are illustrated specifically for the 2D matrices, followed by selection criteria of them among the vast 2D database. The computer investigations are illustrated in the density functional theory route and machine learning benefitted from the vast samples in the 2D library. Synthetic realizations and characterizations of the 2D heterogenous systems are introduced with an emphasis on chemical methods and advanced techniques to understand materials and mechanistic studies. The perspective outlooks cross-dimensional activation strategies of the 2D materials for other applications such as CO2removal, and materials matrices in other dimensions which may inspire incoming research within these fields.
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Affiliation(s)
- R Botella
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - W Cao
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - J Celis
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - J Fernández-Catalá
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - R Greco
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - L Lu
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - V Pankratova
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
| | - F Temerov
- Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu, FIN-90014, Finland
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6
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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7
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Xie X, Ding J, Wu B, Zheng H, Li S, Wang CT, He J, Liu Z, Wang JT, Liu Y. Pressure-Induced Dynamic Tuning of Interlayer Coupling in Twisted WSe 2/WSe 2 Homobilayers. NANO LETTERS 2023; 23:8833-8841. [PMID: 37726204 DOI: 10.1021/acs.nanolett.3c01640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Moiré superlattices induced by twisted van der Waals (vdW) heterostructures or homostructures have recently gained significant attention due to their potential to generate exotic strong-correlation electronic and phonon phenomena. However, the lack of dynamic tuning for interlayer coupling of moiré superlattices hinders a thorough understanding and development of the moiré correlation state. Here, we present a dynamic tuning method for twisted WSe2/WSe2 homobilayers using a diamond anvil cell (DAC). We demonstrate the powerful tuning of interlayer coupling and observe an enhanced response to pressure for interlayer breathing modes and the rapid descent of indirect excitons in twisted WSe2/WSe2 homobilayers. Our findings indicate that the introduction of a moiré superlattice for WSe2 bilayers gives rise to hybridized excitons, which lead to the different pressure-evolution exciton behaviors compared to natural WSe2 bilayers. Our results provide a novel understanding of moiré physics and offer an effective method to tune interlayer coupling of moiré superlattices.
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Affiliation(s)
- Xing Xie
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Camperdown, New South Wales 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Camperdown, New South Wales 2006 Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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8
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Wang H, Wang S, Zhang S, Zhu M, Ouyang W, Li Q. Deducing the internal interfaces of twisted multilayer graphene via moiré-regulated surface conductivity. Natl Sci Rev 2023; 10:nwad175. [PMID: 37484999 PMCID: PMC10361741 DOI: 10.1093/nsr/nwad175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Revised: 04/19/2023] [Accepted: 06/15/2023] [Indexed: 07/25/2023] Open
Abstract
The stacking state of atomic layers critically determines the physical properties of twisted van der Waals materials. Unfortunately, precise characterization of the stacked interfaces remains a great challenge as they are buried internally. With conductive atomic force microscopy, we show that the moiré superlattice structure formed at the embedded interfaces of small-angle twisted multilayer graphene (tMLG) can noticeably regulate surface conductivity even when the twisted interfaces are 10 atomic layers beneath the surface. Assisted by molecular dynamics (MD) simulations, a theoretical model is proposed to correlate surface conductivity with the sequential stacking state of the graphene layers of tMLG. The theoretical model is then employed to extract the complex structure of a tMLG sample with crystalline defects. Probing and visualizing the internal stacking structures of twisted layered materials is essential for understanding their unique physical properties, and our work offers a powerful tool for this via simple surface conductivity mapping.
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Affiliation(s)
| | | | | | - Mengzhen Zhu
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
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9
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Xu B, Zhu J, Xiao F, Jiao C, Liang Y, Wen T, Wu S, Zhang Z, Lin L, Pei S, Jia H, Chen Y, Ren Z, Wei X, Huang W, Xia J, Wang Z. Identifying, Resolving, and Quantifying Anisotropy in ReS 2 Nanomechanical Resonators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300631. [PMID: 36897000 DOI: 10.1002/smll.202300631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/03/2023] [Indexed: 06/15/2023]
Abstract
As an emerging two-dimensional semiconductor, rhenium disulfide (ReS2 ) is renowned for its strong in-plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS2 , experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS2 nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS2 resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS2 crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in-plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re-Re chain in the ReS2 crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lin Lin
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hao Jia
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ying Chen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ziming Ren
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xueyong Wei
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Wen Huang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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10
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Hu T, Xue B, Meng F, Ma L, Du Y, Yu S, Ye R, Li H, Zhang Q, Gu L, Zhou Z, Liang R, Tan C. Preparation of 2D Polyaniline/MoO 3- x Superlattice Nanosheets via Intercalation-Induced Morphological Transformation for Efficient Chemodynamic Therapy. Adv Healthc Mater 2023; 12:e2202911. [PMID: 36603589 DOI: 10.1002/adhm.202202911] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 12/29/2022] [Indexed: 01/07/2023]
Abstract
Organic intercalation of layered nanomaterials is an attractive strategy to fabricate organic/inorganic superlattices for a wide range of promising applications. However, the synthesis of 2D organic/inorganic superlattice nanosheets remains a big challenge. Herein, the preparation of 2D polyaniline/MoO3- x (PANI/MoO3- x ) superlattice nanosheets via intercalation-induced morphological transformation from MoO3 nanobelts, as efficient Fenton-like reagents for chemodynamic therapy (CDT), is reported. Micrometer-long MoO3 nanobelts are co-intercalated with Na+ /H2 O followed by the guest exchange with aniline monomer for in situ polymerization to obtain PANI/MoO3- x nanosheets. Intriguingly, the PANI intercalation can induce the morphological transformation from long MoO3 nanobelts to 2D PANI/MoO3- x nanosheets along with the partial reduction of Mo6+ to Mo5+ , and generation of rich oxygen vacancies. More importantly, thanks to the PANI intercalation-induced activation, the PANI/MoO3- x nanosheets exhibit excellent Fenton-like catalytic activity for generation of hydroxyl radical (·OH) by decomposing H2 O2 compared with the MoO3 nanobelts. It is speculated that the good conductivity of PANI can facilitate electron transport during the Fenton-like reaction, thereby enhancing the efficiency of CDT. Thus, the polyvinylpyrrolidone-modified PANI/MoO3- x nanosheets can function as Fenton-like reagents for highly efficient CDT to kill cancer cells and eradicate tumors.
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Affiliation(s)
- Tingting Hu
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Baoli Xue
- College of Chemistry and Chemical Engineering, Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang, 471934, P. R. China
| | - Fanqi Meng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lu Ma
- National Synchrotron Light Source II, Brookhaven National Laboratory Upton, Upton, NY, 11973, USA
| | - Yonghua Du
- National Synchrotron Light Source II, Brookhaven National Laboratory Upton, Upton, NY, 11973, USA
| | - Shilong Yu
- Institute of Advanced Materials (IAM) and Key Laboratory of Flexible Electronics (KLoFE), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Ruquan Ye
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Hai Li
- Institute of Advanced Materials (IAM) and Key Laboratory of Flexible Electronics (KLoFE), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhan Zhou
- College of Chemistry and Chemical Engineering, Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang, 471934, P. R. China
| | - Ruizheng Liang
- State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Chaoliang Tan
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China.,Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
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11
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Song H, Zhang X, Yuan P, Hu W, Gao Z. First-principles study on bilayer SnP 3 as a promising thermoelectric material. Phys Chem Chem Phys 2022; 24:29693-29699. [PMID: 36453524 DOI: 10.1039/d2cp04167g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
The bilayer SnP3 is recently predicted to exfoliate from its bulk phase, and motivated by the transition of the metal-to-semiconductor when the bulk SnP3 is converted to the bilayer, we study the thermoelectric performance of the bilayer SnP3 using first-principles combined with Boltzmann transport theory and deformation potential theory. The results indicate that the bilayer SnP3 is an indirect band gap semiconductor and possesses high carrier mobility. The high carrier mobility results in a large Seebeck coefficient observed in both n- and p-doped bilayer SnP3, which is helpful for acquiring a high figure of merit (ZT). Moreover, by analyzing the phonon spectrum, relaxation time, and joint density of states, we found that strong phonon scattering makes the phonon thermal conductivity extremely low (∼0.8 W m-1 K-1 at room temperature). Together with a high power factor and a low phonon thermal conductivity, the maximum ZT value can reach up to 3.8 for p-type doping at a reasonable carrier concentration, which is not only superior to that of the monolayer SnP3, but also that of the excellent thermoelectric material SnSe. Our results shed light on the fact that bilayer SnP3 is a promising thermoelectric material with a better performance than its monolayer phase.
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Affiliation(s)
- Hongyue Song
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Xuehua Zhang
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Peiling Yuan
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Wencheng Hu
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
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12
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Xu B, Zhang P, Zhu J, Liu Z, Eichler A, Zheng XQ, Lee J, Dash A, More S, Wu S, Wang Y, Jia H, Naik A, Bachtold A, Yang R, Feng PXL, Wang Z. Nanomechanical Resonators: Toward Atomic Scale. ACS NANO 2022; 16:15545-15585. [PMID: 36054880 PMCID: PMC9620412 DOI: 10.1021/acsnano.2c01673] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization─genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines.
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Affiliation(s)
- Bo Xu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Pengcheng Zhang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | - Jiankai Zhu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Zuheng Liu
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | | | - Xu-Qian Zheng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- College
of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing210023, China
| | - Jaesung Lee
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas79968, United States
| | - Aneesh Dash
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Swapnil More
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Song Wu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Yanan Wang
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hao Jia
- Shanghai
Institute of Microsystem and Information Technology, Chinese Academy
of Sciences, Shanghai200050, China
| | - Akshay Naik
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Adrian Bachtold
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels, Barcelona08860, Spain
| | - Rui Yang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
- School of
Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai200240, China
| | - Philip X.-L. Feng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
| | - Zenghui Wang
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
- State
Key Laboratory of Electronic Thin Films and Integrated Devices, University
of Electronic Science and Technology of China, Chengdu610054, China
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