1
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Piosik E, Szary MJ. Chalcogen Vacancies as Key Drivers of Distinct Physicochemistry in MoS 2, MoSe 2, and MoTe 2 for Selective Catalysis. Chemistry 2025; 31:e202500324. [PMID: 39964340 DOI: 10.1002/chem.202500324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2025] [Accepted: 02/17/2025] [Indexed: 04/08/2025]
Abstract
The catalytic performance of Mo-based transition-metal-dichalcogenide (TMD) monolayers is intrinsically tied to their physicochemical properties. However, the limited chemical diversity among these materials constrains their versatility for key catalytic processes, including carbon dioxide (CRR), nitrogen (NRR), and oxygen (ORR) reduction reactions. This study employs density functional theory (DFT) calculations to investigate the impact of chalcogen vacancies on the properties ofMoS 2 ${{\rm{MoS}}_2 }$ ,MoSe 2 ${{\rm{MoSe}}_2 }$ , andMoTe 2 ${{\rm{MoTe}}_2 }$ , focusing on the adsorption behaviors of CO, NO, andNO 2 ${{\rm{NO}}_2 }$ . The findings reveal that chalcogen vacancies not only enhance surface reactivity but also impart distinctive physicochemical characteristics to each TMD. These effects arise from intrinsic bonding differences, resulting in distinct charge availability at exposed Mo atoms and variations in vacancy dimensions, which shape specific surface interactions. Hence, while adsorption differences between pristine surfaces are generally negligible for catalysis, vacancies amplify them by over an order of magnitude, resulting in pronounced material-specific behaviors. Moreover, varying vacancy dimensions affect how species incorporate into defects, further enhancing the differences. These characteristics unlock substantial potential of TMD sheets for distinct surface chemistries, transforming them from relatively similar to markedly different as defect density rises. Consequently, our findings provide insights for tailoring these materials toward applications in electro- and photocatalysis.
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Affiliation(s)
- Emilia Piosik
- Institute of Materials Research and Quantum Engineering, Poznan University of Technology, ul. Piotrowo 3, 61-138, Poznan, Poland
| | - Maciej J Szary
- Institute of Physics, Poznan University of Technology, ul. Piotrowo Poznań, 3, 61-138, Poznan, Poland
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2
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Wang Z, Wang N, Yan L, Xu Y, Li X, Zhao Y, Si J, Gao H, Hou X. Unveiling Anomalous Ultrafast Carrier Dynamics of Strong Spectral Overlapping in Few-Layer MoS 2. J Phys Chem Lett 2025; 16:3287-3294. [PMID: 40123076 DOI: 10.1021/acs.jpclett.5c00110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/25/2025]
Abstract
Molybdenum disulfide (MoS2) nanosheets exhibit significant applications in photoelectric devices, and correctly revealing the photogenerated carrier dynamics in the material is crucial for understanding its photophysical response mechanism and optimizing the photoelectric response efficiency of the devices. Herein, we study the ultrafast photogenerated carrier dynamics in MoS2 nanosheets using femtosecond time-resolved transient absorption (TA) microscopy and find that the anomalous rebleaching phenomenon of the TA signals for A- and B-excitons takes place at high pump fluences. By performing a careful quantitative fitting of the time-resolved TA signals, we ascribe the anomalous rebleaching to a result of the superposition of photobleaching and photoinduced absorption induced by the bandgap renormalization effect. This work provides new perspectives for elucidating and comprehending the ultrafast carrier dynamics from the complex TA signals, especially when there is an overlap between positive and negative signals.
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Affiliation(s)
- Zengyue Wang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Quantum Information and Quantum Optoelectronic Devices, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ning Wang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Lihe Yan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University, Tianshui 741001, China
| | - Yanmin Xu
- Xi'an Key Laboratory of Network Convergence Communication, School of Communication and Information Engineering, Xi'an University of Science and Technology, Xi'an 710054, China
| | - Xiangbing Li
- Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University, Tianshui 741001, China
| | - Yuxiang Zhao
- Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Tianshui Normal University, Tianshui 741001, China
| | - Jinhai Si
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hong Gao
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Shaanxi Province Key Laboratory of Quantum Information and Quantum Optoelectronic Devices, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xun Hou
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Photonic Technique for Information, School of Electronics Science & Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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3
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Shen Y, Wen Y, Li S, Ding X, Cai Y, Jin J, Yang Z. Nucleic acid coated photothermal nanoregulator for multiple therapy of drug-resistant breast cancer. Int J Biol Macromol 2025; 308:142592. [PMID: 40157690 DOI: 10.1016/j.ijbiomac.2025.142592] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2024] [Revised: 03/22/2025] [Accepted: 03/26/2025] [Indexed: 04/01/2025]
Abstract
Chemotherapy resistance is a leading cause of failure in cancer treatment. A variety of strategies have been investigated to overcome this resistance in cancer therapies. However, the complex microenvironment of tumor cells makes it challenging for any single approach to achieve optimal therapeutic outcomes. In this study, we modified MXene with hyaluronic acid (HA) and coloaded it with doxorubicin (DOX) and the nucleic acid miR489 to address chemotherapy resistance by inhibiting DOX efflux and enabling gene interference. The tumor-targeting capability and biocompatibility of the developed nanosystem, miR489-DOX/Ti3C2@HA-ADH (DTH489), were enhanced through the incorporation of HA. Under near-infrared radiation, MXene not only facilitates photothermal therapy but also reduces the efflux of chemotherapy drugs by down regulating the expression of P-glycoprotein. Additionally, miR489 inhibits epithelial-mesenchymal transition by suppressing the expression of Mothers Against Decapentaplegic Homolog 3, which substantially improves the sensitivity of drug-resistant cancer cells to DOX. In vitro studies confirmed that DTH489 effectively inhibited DOX-resistant breast cancer cells (MCF-7/ADM). Moreover, DTH489 exhibited substantial tumor growth suppression in a mouse model of drug-resistant breast cancer. The results of this research underscore the potential of DTH489 as a multimodal therapeutic platform that effectively reverses chemotherapy resistance in cancer.
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Affiliation(s)
- Yuxin Shen
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China
| | - Yixin Wen
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China
| | - Sen Li
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China
| | - Xuefeng Ding
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China
| | - Yanfei Cai
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China
| | - Jian Jin
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China.
| | - Zhaoqi Yang
- School of Life Sciences and Health Engineering, Jiangnan University, Wuxi 214122, China.
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4
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López-Alcalá D, Hu Z, Baldoví JJ. Graphendofullerene: a novel molecular two-dimensional ferromagnet. Chem Sci 2025:d5sc01278c. [PMID: 40177315 PMCID: PMC11959406 DOI: 10.1039/d5sc01278c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2025] [Accepted: 03/23/2025] [Indexed: 04/05/2025] Open
Abstract
Carbon chemistry has attracted a lot of attention from chemists, physicists and material scientists in the last few decades. The recent discovery of graphullerene provides a promising platform for many applications due to its exceptional electronic properties and the possibility to host molecules or clusters inside the fullerene units. Herein, we introduce graphendofullerene, a novel molecular-based two-dimensional (2D) magnetic material formed by trimetallic nitride clusters encapsulated on graphullerene. Through first-principles calculations, we demonstrate the successful incorporation of the molecules into the 2D network formed by C80 fullerenes, which leads to robust long-range ferromagnetic order with a Curie temperature (T C) of 38 K. Additionally, we achieve a 45% and 18% increase in T C by strain engineering and electrostatic doping, respectively. These findings open the way for a new family of molecular 2D magnets based on graphendofullerene for advanced technologies.
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Affiliation(s)
- Diego López-Alcalá
- Instituto de Ciencia Molecular, Universitat de València Catedrático José Beltrán 2 46980 Paterna Spain
| | - Ziqi Hu
- Key Laboratory of Precision and Intelligent Chemistry, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Department of Materials Science and Engineering, University of Science and Technology of China Hefei 230026 China
| | - José J Baldoví
- Instituto de Ciencia Molecular, Universitat de València Catedrático José Beltrán 2 46980 Paterna Spain
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5
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Oh HG, You Y, Lee S, Lee S, Ren F, Pearton SJ, Kim J, Lee GH. Commensurate, Incommensurate, and Reconstructed Structures of Multilayer Transition Metal Dichalcogenide and Their Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2412737. [PMID: 40103500 DOI: 10.1002/smll.202412737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2024] [Revised: 02/25/2025] [Indexed: 03/20/2025]
Abstract
Multilayer transition metal dichalcogenides (ML-TMDs) with commensurate, incommensurate, and reconstructed structures, have emerged as a class of 2D materials with unique properties that differ significantly from their monolayer counterparts. While previous research has focused on monolayers, the discovery of various novel properties has sparked interest in multilayers with diverse structures engineered through stacking. These materials are characterized by interactions between layers and exhibit remarkable tunability in their structural, optical, and electronic behaviors depending on stacking order, twist angle, and interlayer coupling. This review provides an overview of ML-TMDs and explores their properties such as electronic band structure, optical responses, ferroelectricity, and anomalous Hall effect. Various synthetic methods employed to fabricate ML-TMDs, including mechanical stacking and chemical vapor deposition techniques, with an emphasis on achieving precise control of the twist angles and layer configurations, are discussed. This study further explores potential applications of ML-TMDs in nanoelectronics, optoelectronics, and quantum devices, where their unique properties can be harnessed for next-generation technologies. The critical role played by these materials in the development of future electronic and quantum devices is highlighted.
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Affiliation(s)
- Hyun-Geun Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Younghyun You
- HBM Package Development Group, Samsung Electronics, Suwon, 16677, Republic of Korea
- Department of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungyun Lee
- HBM Package Development Group, Samsung Electronics, Suwon, 16677, Republic of Korea
- Department of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sangheon Lee
- Department of Chemical Engineering and Materials Science, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Fan Ren
- Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Stephen J Pearton
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Jihyun Kim
- HBM Package Development Group, Samsung Electronics, Suwon, 16677, Republic of Korea
- Department of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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Tian Y, Liu H, Li J, Liu B, Liu F. Recent Developments of Advanced Broadband Photodetectors Based on 2D Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2025; 15:431. [PMID: 40137604 PMCID: PMC11945223 DOI: 10.3390/nano15060431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2025] [Revised: 03/07/2025] [Accepted: 03/08/2025] [Indexed: 03/29/2025]
Abstract
With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations and exceptional electronic properties, two-dimensional (2D) materials are considered as ideal candidates for broadband photodetection applications. However, broadband photodetectors with both high responsivity and fast response time remain a challenging issue for all the researchers. This review paper is organized as follows. Introduction introduces the fundamental properties and broadband photodetection performances of transition metal dichalcogenides (TMDCs), perovskites, topological insulators, graphene, and black phosphorus (BP). This section provides an in-depth analysis of their unique optoelectronic properties and probes the intrinsic physical mechanism of broadband detection. In Two-Dimensional Material-Based Broadband Photodetectors, some innovative strategies are given to expand the detection wavelength range of 2D material-based photodetectors and enhance their overall performances. Among them, chemical doping, defect engineering, constructing heterostructures, and strain engineering methods are found to be more effective for improving their photodetection performances. The last section addresses the challenges and future prospects of 2D material-based broadband photodetectors. Furthermore, to meet the practical requirements for very large-scale integration (VLSI) applications, their work reliability, production cost and compatibility with planar technology should be paid much attention.
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Affiliation(s)
- Yan Tian
- School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China; (Y.T.); (J.L.)
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China;
- Foshan Graduate School of Innovation, Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan 528300, China
| | - Hao Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China;
| | - Jing Li
- School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China; (Y.T.); (J.L.)
- Foshan Graduate School of Innovation, Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan 528300, China
| | - Baodan Liu
- School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, China; (Y.T.); (J.L.)
- Foshan Graduate School of Innovation, Northeastern University, No. 2, Zhihui Road, Shunde District, Foshan 528300, China
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China;
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Wu J, Zhu P, Meng F, Dong J, Yan X, Tu Z, Chen ZJ, Lan X, Zhang L, Zhang T, Zheng J, Wang X, Peng J. Two-dimensional BiTeX crystals with persistent luminescence induced by photochemical reactions. NANOSCALE 2025; 17:5241-5248. [PMID: 39873550 DOI: 10.1039/d4nr04824e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2025]
Abstract
Two-dimensional (2D) materials are highly valued for their unique properties and potential applications, as they can display exotic behaviors differing from those of their bulk forms. Research on elementary and binary solids has been making great progress recently, while synthesizing multi-component 2D materials experimentally remains a challenge, despite the possibility of greatly extending the number of members of the 2D realm. In this study, we synthesized ternary BiTeX (X = Cl, Br, I) nanosheets with high crystallinity through an electrochemical exfoliation method. Structural analysis confirmed the retention of bulk composition in these nanosheets. Interestingly, the BiTeX nanosheets display a persistent luminescence effect, where the photogenerated carriers exhibit lifetimes of over 100 seconds. Furthermore, the recovery time increased at lower temperatures. The persistent luminescence in 2D BiTeX, which can be ascribed to reversible bond cleavage and recovery under photoexcitation, exhibits potential for applications in fluorescence and photo-responsive systems.
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Affiliation(s)
- Jiajing Wu
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Pengjia Zhu
- The Fifth Engineering Co., Ltd of China Railway Seventh Group, Zhengzhou, 450009, China
| | - Fei Meng
- The Fifth Engineering Co., Ltd of China Railway Seventh Group, Zhengzhou, 450009, China
| | - Juntao Dong
- The Fifth Engineering Co., Ltd of China Railway Seventh Group, Zhengzhou, 450009, China
| | - Xiao Yan
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Zhenlong Tu
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Zheng-Jie Chen
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, 518107, China
| | - Xuexia Lan
- Low Dimensional Energy Materials Research Center, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
| | - Lili Zhang
- Low Dimensional Energy Materials Research Center, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
| | - Tao Zhang
- Low Dimensional Energy Materials Research Center, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
| | - Jian Zheng
- Low Dimensional Energy Materials Research Center, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
| | - Xinzhong Wang
- Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen, 518172, China.
| | - Jing Peng
- Faculty of Materials Science and Energy Engineering, Shenzhen University of Advanced Technology, Shenzhen, 518107, China
- Low Dimensional Energy Materials Research Center, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.
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8
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Essner JB, Bera A, Jabrayilov M, Chaudhari A, Diroll BT, Zaikina JV, Panthani MG. Elucidating the role of oxidation in two-dimensional silicon nanosheets. NANOSCALE HORIZONS 2025; 10:605-615. [PMID: 39838897 DOI: 10.1039/d4nh00387j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2025]
Abstract
We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si-O-Si, OxSi) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with a low absolute photoluminescence quantum yield (as low as 0.2%). By intentionally oxidizing the nanosheets, the photoluminescence peak emission wavelength blueshifted to 510 nm, and the quantum yield increased by more than an order of magnitude to 8.5%. These results demonstrate that oxidation of 2D silicon nanosheets modulates the material's bandgap and suggests that previously reported photoluminescence properties for this material resulted, in part, from oxidation.
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Affiliation(s)
- Jeremy B Essner
- Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011, USA.
| | - Abhijit Bera
- Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011, USA.
| | - Maharram Jabrayilov
- Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011, USA.
| | - Abhishek Chaudhari
- Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011, USA.
| | - Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, IL 60639, USA
| | - Julia V Zaikina
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, USA
| | - Matthew G Panthani
- Department of Chemical and Biological Engineering, Iowa State University, Ames, Iowa 50011, USA.
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9
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Wakizaka M, Ishiguro K, Yoshida T, Iguchi H, Tsumuraya T, Ito H, Yamashita M, Takaishi S. Double Core-Shell Semiconducting Molecular Chain Halogen-Bridged Metal Complexes with Ohmic Contact Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2025. [PMID: 39980313 DOI: 10.1021/acsami.4c22128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2025]
Abstract
The fabrication of heterostructures from low-dimensional materials is very challenging, particularly the creation of low-dimensional heterojunctions that can be characterized at an atomic resolution. In a previous work, a two-dimensional (2D) heterostructure made from halogen-bridged metal complexes (MX-Chains), [Ni(chxn)2Br]Br2 (chxn = 1R,2R-diaminocyclohexane) and [Pd(chxn)2Br]Br2, has been synthesized, and the nature of the electronically 1D heterojunction at an atomic resolution was revealed. In the work reported here, we have successfully fabricated double core-shell crystals (Ni-Pd-Ni) from these MX-Chains, using a stepwise electrochemical epitaxial method. Upon cleavage of the heterostructure along the van der Waals layers, a double heterojunction surface is observed. The MX-Chains are aligned in the heterostructure and exhibit anisotropic optical properties based on their 1D electronic systems, as measured using UV-vis-NIR polarized reflectance microscopy. Current-voltage curves at different temperatures are recorded using three probes attached to different areas of the heterostructure and reveal the presence of ohmic conduction through the double 1D heterojunctions. The ohmic contact between the two types of MX-Chains arises from the atomic-scale connection of the MX-Chains at the heterojunction. This work represents the first example of a molecule-based heterostructure that has electronic conductivity and demonstrates electrical conduction through a 1D heterojunction.
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Affiliation(s)
- Masanori Wakizaka
- Department of Applied Chemistry and Bioscience, Faculty of Science and Technology, Chitose Institute of Science and Technology, 758-65 Bibi, Chitose 066-8655, Japan
| | - Keisuke Ishiguro
- Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa, Nagoya 464-8603, Japan
| | - Takefumi Yoshida
- Faculty of Systems Engineering, Wakayama University, Sakaedani 930, Wakayama 640-8510, Japan
| | - Hiroaki Iguchi
- Department of Materials Chemistry, Graduate School of Engineering, Nagoya University, Chikusa Nagoya 464-8603, Japan
| | - Takao Tsumuraya
- Magnesium Research Center, Kumamoto University, Kumamoto 860-8555, Japan
| | - Hiroshi Ito
- Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa, Nagoya 464-8603, Japan
| | - Masahiro Yamashita
- School of Chemical Science and Engineering, Tongji University, Siping Road 1239, Shanghai 200092, PR China
- Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki-Aza-Aoba, Aoba-Ku, Sendai 980-8578, Japan
| | - Shinya Takaishi
- Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki-Aza-Aoba, Aoba-Ku, Sendai 980-8578, Japan
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10
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Sheremetyeva N, Meunier V. Hydrogen adsorption and properties of goldene: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:145001. [PMID: 39929077 DOI: 10.1088/1361-648x/adb471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2024] [Accepted: 02/10/2025] [Indexed: 02/21/2025]
Abstract
Goldene, a single-atom Au monolayer with a hexagonal lattice in the P6/mmm space group, exhibits interesting hyrdrogen absorption properties, as revealed using density functional theory calculations. This study focuses on H-adsorbed goldene at different coverage ratios, and provides insights into the energetic and electronic properties of this system, distinguishing it from the well-studied pristine goldene. Hydrogen adsorption on goldene, while energetically comparable to bulk gold, shows a slight reduction in energetic favorability and introduces specific scanning tunneling microscopy images, reported here for the first time. Raman spectra of H-adsorbed goldene at a 1/9 coverage ratio are also first reported here, along with a vibrational mode analysis, highlighting distinct atomic displacement patterns. Finally, for completeness, previously reported results on the dynamical and mechanical stability of pristine goldene are reported, with a special emphasis on the quadratic flexural mode characteristic of 2D materials. New insights into the thermodynamic properties of goldene compared to bulk gold are also discussed. Although bulk gold remains thermodynamically more stable at all temperatures, the vibrational contributions to the Helmholtz free energy favor goldene above 175 K, narrowing the stability gap with temperature. Overall, this study validates goldene's robustness and expands its potential for experimental and theoretical exploration in the context of hydrogen adsorption and functionalized 2D materials more broadly.
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Affiliation(s)
- Natalya Sheremetyeva
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, United States of America
| | - Vincent Meunier
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, United States of America
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11
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Wagoner-Oshima K, Bhattarai R, Terrones H, Rhone TD. Data-Driven Studies of Two-Dimensional Materials and Their Nonlinear Optical Properties. ACS APPLIED MATERIALS & INTERFACES 2025; 17:11002-11011. [PMID: 39928884 DOI: 10.1021/acsami.4c20385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2025]
Abstract
We present a data-driven investigation leveraging high-throughput density functional theory calculations and machine learning to expedite the discovery of van der Waals (vdW) materials with nonlinear optical properties. Using the Computational 2D Materials Database, we analyze data from 345 noncentrosymmetric, nonmagnetic semiconductor monolayers, focusing on their second-order susceptibility tensors across multiple energy ranges suitable for various laser applications. By applying data mining techniques to extract key features from second harmonic generation spectra and employing machine learning models, we predict the second-order optical susceptibility for these materials. Our framework for this work facilitates the rapid identification of vdW materials for advanced photonics, optoelectronics, and data storage applications.
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Affiliation(s)
- Kai Wagoner-Oshima
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Romakanta Bhattarai
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Humberto Terrones
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Trevor David Rhone
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
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12
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Guo Z, Shang J, Li H, Zhu M, Li G, Sun Z, Yang Y, Feng Y, Lu Y, Li Z, Gao F, Li S. 1D-(GaN/AlN)/2D-Gr/3D-(SiO 2/Si) Combined High-Performance Flash Memory Device. ACS APPLIED MATERIALS & INTERFACES 2025. [PMID: 39968934 DOI: 10.1021/acsami.5c00766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2025]
Abstract
Recent advancements have shown that flash memory devices made from entirely two-dimensional (2D) materials exhibit nice performance in terms of storage window, switching speed, and extinction ratio. However, these devices still face challenges such as low carrier density, environmentally sensitive, and difficulty in integration due to the properties of 2D material channels. Here, we propose a novel nonvolatile memory device based on a floating-gate field effect transistor, which integrates one-dimensional (1D) GaN/AlN microwire with 2D few-layer graphene (Gr) to combine the advantages of both materials. By forming a linear-direction 2D electron gas in the GaN channel layer and precise interface of GaN/AlN/Graphene, our memory device achieves a fast switching speed (5 ms) and demonstrates long-term stability (>12,000 cycles; >600 s). This makes it suitable for high-performance type conversion memory and reconfigurable inverter logic circuits, indicating a promising application potential for the integration device of hybrid-dimensional materials.
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Affiliation(s)
- Zhonghong Guo
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Jianbo Shang
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Hangtian Li
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Miaodong Zhu
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Guoxin Li
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Zhengnan Sun
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Ying Yang
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Yikang Feng
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Yunshu Lu
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Zexi Li
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Fangliang Gao
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
| | - Shuti Li
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China
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13
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Iloanya AC, Kastuar SM, Jana G, Ekuma CE. Atomic-scale intercalation and defect engineering for enhanced magnetism and optoelectronic properties in atomically thin GeS. Sci Rep 2025; 15:4546. [PMID: 39915526 PMCID: PMC11803102 DOI: 10.1038/s41598-025-88290-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2024] [Accepted: 01/28/2025] [Indexed: 02/09/2025] Open
Abstract
We investigate the synergistic effects of chromocene intercalation (GeS-Cr[Formula: see text]) and randomly distributed sulfur vacancies on the optoelectronic properties of atomically thin GeS using advanced first-principles many-body simulations. We demonstrate the emergence of a magnetic ground state in GeS, driven by weak chemical interactions between the GeS host and the intercalated organometallic chromocene. Using large-scale, first-principles many-body simulations that account for randomly distributed sulfur vacancies and the dielectric screening within the hybrid material, we show the tunability of the optoelectronic features. Specifically, we observe enhanced absorption in the range of ∼ 0.21 to 3.5 eV, including absorption below the bandgap threshold as the vacancy concentration is tuned between 1 and 5%. The emergent Lifshitz tails are in excellent agreement with our numerical calculations. The predicted features and tunability underscore the potential of defect engineering for applications in magneto-optics and high-density data storage, where precise manipulation of light with magnetic fields is crucial for advanced applications.
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Affiliation(s)
- Anthony C Iloanya
- Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA
- Institute for Functional Materials and Devices, Lehigh University, Bethlehem, PA, 18015, USA
| | - Srihari M Kastuar
- Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA
- Institute for Functional Materials and Devices, Lehigh University, Bethlehem, PA, 18015, USA
| | - Gour Jana
- Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA
- Institute for Functional Materials and Devices, Lehigh University, Bethlehem, PA, 18015, USA
| | - Chinedu E Ekuma
- Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA.
- Institute for Functional Materials and Devices, Lehigh University, Bethlehem, PA, 18015, USA.
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14
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Gu L, Yang HM, Yang LM. Two-dimensional inverse double sandwich CoB 7: strain-induced non-magnetic to ferromagnetic transition. Phys Chem Chem Phys 2025; 27:3217-3229. [PMID: 39840503 DOI: 10.1039/d4cp04495a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/23/2025]
Abstract
A full-scale structural search was performed using density functional theory calculations and a universal structural prediction evolutionary algorithm. This produced a lowest energy two-dimensional (2D) CoB7 structure. The CoB7-1 global minimum structure has unusual inverse double sandwich features. The structure consists of two outer borophene layers which are held together with a layer of Co atoms. This is a B-Co-B sandwich structure. Density functional theory calculations predict that CoB7-1 has good thermodynamic stability, kinetic stability, and mechanical stability. The overall bonding framework is able to survive molecular dynamics annealing up to 1000 K for 10 ps. The DFT results predict that this structure is very stable and should be amenable to experimental synthesis. Surprisingly, we found that this material can change from a non-magnetic ground state to a ferromagnetic state under the influence of biaxial strain. This unusual property of having a magnetic transition while at the same temperature leads us to conclude that this new 2D CoB7 crystal may have potential applications in future nano-magnetic devices at or near room temperature.
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Affiliation(s)
- Liang Gu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Materials Chemistry and Service Failure, Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica, Hubei Engineering Research Center for Biomaterials and Medical Protective Materials, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Hui-Min Yang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Materials Chemistry and Service Failure, Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica, Hubei Engineering Research Center for Biomaterials and Medical Protective Materials, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Li-Ming Yang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Materials Chemistry and Service Failure, Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica, Hubei Engineering Research Center for Biomaterials and Medical Protective Materials, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
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15
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Kwon M, Ha JS, Lee DH, Kwon T, Kim M, Jeong YH, Kim HS, Ditter A, Shapiro DA, Yu YS, Park YS, Lee D. Boosting the Performance of Alkaline Anion Exchange Membrane Water Electrolyzer with Vanadium-Doped NiFe 2O 4. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2410006. [PMID: 39777981 DOI: 10.1002/smll.202410006] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2024] [Revised: 12/09/2024] [Indexed: 01/11/2025]
Abstract
Developing efficient, economical, and stable catalysts for the oxygen evolution reaction is pivotal for producing large-scale green hydrogen in the future. Herein, a vanadium-doped nickel-iron oxide supported on nickel foam (V-NiFe2O4/NF) is introduced, and synthesized via a facile hydrothermal method as a highly efficient electrocatalyst for water electrolysis. X-ray photoelectron and absorption spectroscopies reveal a synergistic interaction between the vanadium dopant and nickel/iron in the host material, which tunes the electronic structure of NiFe2O4 to increase the number of electrochemically active sites. The V-NiFe2O4/NF electrode exhibited superior electrochemical performance, with a low overpotential of 186 mV at a current density of 10 mA cm-2, a Tafel slope value of 54.45 mV dec-1, and minimal charge transfer resistance. Employing the V-NiFe2O4/NF electrode as an anode in an alkaline anion exchange membrane water electrolyzer single-cell, a cell voltage of 1.711 V is required to achieve a high current density of 1.0 A cm-2. Remarkably, the cell delivered an energy conversion efficiency of 73.30% with enduring stability, making it a promising candidate for industrial applications.
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Affiliation(s)
- Minsol Kwon
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Jun Seok Ha
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Dong Ho Lee
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Taehyun Kwon
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Minseo Kim
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Young-Hun Jeong
- Department of Physics, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Han Seul Kim
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Alex Ditter
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - David A Shapiro
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Young-Sang Yu
- Department of Physics, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Yoo Sei Park
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
- Advanced Energy Research Institute, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
| | - Dongju Lee
- Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk, 28644, Republic of Korea
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16
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Moon D, Lee W, Lim C, Kim J, Kim J, Jung Y, Choi HY, Choi WS, Kim H, Baek JH, Kim C, Joo J, Oh HG, Jang H, Watanabe K, Taniguchi T, Bae S, Son J, Ryu H, Kwon J, Cheong H, Han JW, Jang H, Lee GH. Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides. Nature 2025; 638:957-964. [PMID: 39972146 DOI: 10.1038/s41586-024-08492-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 12/04/2024] [Indexed: 02/21/2025]
Abstract
Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), are promising for advanced electronics beyond silicon1-3. Traditionally, TMDs are epitaxially grown on crystalline substrates by chemical vapour deposition. However, this approach requires post-growth transfer to target substrates, which makes controlling thickness and scalability difficult. Here we introduce a method called hypotaxy ('hypo' meaning downward and 'taxy' meaning arrangement), which enables wafer-scale single-crystal TMD growth directly on various substrates, including amorphous and lattice-mismatched substrates, while preserving crystalline alignment with an overlying 2D template. By sulfurizing or selenizing a pre-deposited metal film under graphene, aligned TMD nuclei form, coalescing into a single-crystal film as graphene is removed. This method achieves precise MoS2 thickness control from monolayer to hundreds of layers on diverse substrates, producing 4-inch single-crystal MoS2 with high thermal conductivity (about 120 W m-1 K-1) and mobility (around 87 cm2 V-1 s-1). Furthermore, nanopores created in graphene using oxygen plasma treatment allow MoS2 growth at a lower temperature of 400 °C, compatible with back-end-of-line processes. This hypotaxy approach extends to other TMDs, such as MoSe2, WS2 and WSe2, offering a solution to substrate limitations in conventional epitaxy and enabling wafer-scale TMDs for monolithic three-dimensional integration.
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Affiliation(s)
- Donghoon Moon
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Wonsik Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Chaesung Lim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea
| | - Jinwoo Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Jiwoo Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Yeonjoon Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Hyun-Young Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Won Seok Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Hangyel Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea
| | - Ji-Hwan Baek
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea
| | - Changheon Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Jeonbuk, Republic of Korea
| | - Jaewoong Joo
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Hyun-Geun Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Hajung Jang
- Department of Physics, Sogang University, Seoul, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Sukang Bae
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Jeonbuk, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si, Republic of Korea
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Jeonbuk, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology (UST), Seoul, Republic of Korea
| | - Huije Ryu
- Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, Republic of Korea
| | - Junyoung Kwon
- Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, Republic of Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul, Republic of Korea
| | - Jeong Woo Han
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea
| | - Hyejin Jang
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea.
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul, South Korea.
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17
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Ray S, Paulus B. First-Principles Investigations of Two-Sided Functionalised MoS 2 Monolayer. NANOMATERIALS (BASEL, SWITZERLAND) 2025; 15:193. [PMID: 39940170 PMCID: PMC11820476 DOI: 10.3390/nano15030193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2024] [Revised: 01/15/2025] [Accepted: 01/20/2025] [Indexed: 02/14/2025]
Abstract
In this computational study, we investigate two-sided functionalised MoS2 with alkali metal atoms as donors and the organic acceptor molecule F4TCNQ as an acceptor. Characterisation of functionalised MoS2 involves first-principles calculations within the density functional theory (DFT) framework with a PBE+D3 scheme to investigate the electronic structure and quantify the charge transfer in the two-sided functionalised system in comparison to the one-sided functionalised counterpart. Within the two-sided functionalised systems, there is an increase in the overall charge on MoS2 as a result of stronger electron transfer from the donor to the monolayer, additionally controlled by the ability of the acceptor to receive electrons.
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Affiliation(s)
| | - Beate Paulus
- Institut für Chemie und Biochemie, Freie Universität Berlin, Arnimallee 22, 14195 Berlin, Germany;
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18
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Singh KB, Bora J, Basumatary B, Bora S, Pal AR. P-type doping in edge-enriched MoS 2-x nanostructures via RF-generated nitrogen plasma. NANOSCALE 2025; 17:2345-2353. [PMID: 39688165 DOI: 10.1039/d4nr03612c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/18/2024]
Abstract
In this work, we report an intuitive magnetron sputtering technique for the synthesis of vertically aligned MoS2 (v-MS) nanostructures. The morphology and orientation of the as-synthesized nanostructures can be modified by altering the parameters of the sputtering process. This work emphasizes the versatility of magnetron sputtering to synthesize edge-enriched vertically aligned 2D nanostructures. These structures have diverse applications, such as those in optoelectronics, hydrogen evolution, sensing, energy storage and catalysis. The vertically aligned nanostructure of MoS2 was confirmed using the field emission scanning electron microscopy and Raman spectroscopy techniques. Furthermore, we studied the plasma-based nitrogen doping process with minimal damage for introducing nitrogen atoms into 2D nanomaterials. A plasma discharged into a nitrogen environment, assisted by a simple radio frequency (RF) power supply, was employed for p-type doping in v-MS. The successful doping of nitrogen was investigated by Raman spectroscopy and X-ray photoelectron spectroscopy. Atomic force microscopy images confirmed the little surface damage resulting from the nitrogen doping technique. The change in work function resulting from doping was examined by Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy. Optical emission spectroscopy (OES) study revealed the role of nitrogen plasma ions in doping with minimal surface damaging. This work demonstrates the effective alteration of the work function of the MoS2 nanomaterial via plasma treatment.
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Affiliation(s)
- Khomdram Bijoykumar Singh
- Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India.
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Jyotisman Bora
- Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India.
| | - Bablu Basumatary
- Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India.
- Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India
| | - Shakyadeep Bora
- Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India.
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Arup Ratan Pal
- Plasma Nanotechnology Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology (IASST), Guwahati-781035, India.
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
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19
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Sun Y, He W, Jiang C, Li J, Liu J, Liu M. Wearable Biodevices Based on Two-Dimensional Materials: From Flexible Sensors to Smart Integrated Systems. NANO-MICRO LETTERS 2025; 17:109. [PMID: 39812886 PMCID: PMC11735798 DOI: 10.1007/s40820-024-01597-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2024] [Accepted: 11/08/2024] [Indexed: 01/16/2025]
Abstract
The proliferation of wearable biodevices has boosted the development of soft, innovative, and multifunctional materials for human health monitoring. The integration of wearable sensors with intelligent systems is an overwhelming tendency, providing powerful tools for remote health monitoring and personal health management. Among many candidates, two-dimensional (2D) materials stand out due to several exotic mechanical, electrical, optical, and chemical properties that can be efficiently integrated into atomic-thin films. While previous reviews on 2D materials for biodevices primarily focus on conventional configurations and materials like graphene, the rapid development of new 2D materials with exotic properties has opened up novel applications, particularly in smart interaction and integrated functionalities. This review aims to consolidate recent progress, highlight the unique advantages of 2D materials, and guide future research by discussing existing challenges and opportunities in applying 2D materials for smart wearable biodevices. We begin with an in-depth analysis of the advantages, sensing mechanisms, and potential applications of 2D materials in wearable biodevice fabrication. Following this, we systematically discuss state-of-the-art biodevices based on 2D materials for monitoring various physiological signals within the human body. Special attention is given to showcasing the integration of multi-functionality in 2D smart devices, mainly including self-power supply, integrated diagnosis/treatment, and human-machine interaction. Finally, the review concludes with a concise summary of existing challenges and prospective solutions concerning the utilization of 2D materials for advanced biodevices.
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Affiliation(s)
- Yingzhi Sun
- School of Medical Technology, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
| | - Weiyi He
- School of Medical Technology, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Can Jiang
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
| | - Jing Li
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China.
| | - Jianli Liu
- School of Medical Technology, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Mingjie Liu
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing, 100191, People's Republic of China
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20
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Cui F, García-López V, Wang Z, Luo Z, He D, Feng X, Dong R, Wang X. Two-Dimensional Organic-Inorganic van der Waals Hybrids. Chem Rev 2025; 125:445-520. [PMID: 39692750 DOI: 10.1021/acs.chemrev.4c00565] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2024]
Abstract
Two-dimensional organic-inorganic (2DOI) van der Waals hybrids (vdWhs) have emerged as a groundbreaking subclass of layer-stacked (opto-)electronic materials. The development of 2DOI-vdWhs via systematically integrating inorganic 2D layers with organic 2D crystals at the molecular/atomic scale extends the capabilities of traditional 2D inorganic vdWhs, thanks to their high synthetic flexibility and structural tunability. Constructing an organic-inorganic hybrid interface with atomic precision will unlock new opportunities for generating unique interfacial (opto-)electronic transport properties by combining the strengths of organic and inorganic layers, thus allowing us to satisfy the growing demand for multifunctional applications. Here, this review provides a comprehensive overview of the latest advancements in the chemical synthesis, structural characterization, and numerous applications of 2DOI-vdWhs. Firstly, we introduce the chemistry and the physical properties of the recently rising organic 2D crystals (O2DCs), which feature crystalline 2D nanostructures comprising carbon-rich repeated units linked by covalent/noncovalent bonds and exhibit strong in-plane extended π-conjugation and weak interlayer vdWs interaction. Simultaneously, representative inorganic 2D crystals (I2DCs) are briefly summarized. After that, the synthetic strategies will be systematically summarized, including synthesizing single-component O2DCs with dimensional control and their vdWhs with I2DCs. With these synthetic approaches, the control in the dimension, the stacking modes, and the composition of the 2DOI-vdWhs will be highlighted. Subsequently, a special focus will be given on the discussion of the optical and electronic properties of the single-component 2D materials and their vdWhs, which will be closely relevant to their structures, so that we can establish a general structure-property relationship of 2DOI-vdWhs. In addition to these physical properties, the (opto-)electronic devices such as transistors, photodetectors, sensors, spintronics, and neuromorphic devices as well as energy devices will be discussed. Finally, we provide an outlook to discuss the key challenges for the 2DOI-vdWhs and their future development. This review aims to provide a foundational understanding and inspire further innovation in the development of next-generation 2DOI-vdWhs with transformative technological potential.
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Affiliation(s)
- Fucai Cui
- Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
| | - Víctor García-López
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany
| | - Zhiyong Wang
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
| | - Zhongzhong Luo
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Daowei He
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed) and Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany
- Department of Synthetic Materials and Functional Devices, Max Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany
| | - Renhao Dong
- Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
- Department of Chemistry, The University of Hong Kong, Hong Kong 999077, China
- Materials Innovation Institute for Life Sciences and Energy (MILES), HKU-SIRI, Shenzhen 518000, China
| | - Xinran Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- School of Integrated Circuits, Nanjing University, Suzhou 215163, China
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, Suzhou 215163, China
- Suzhou Laboratory, Suzhou 215163, China
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21
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Guo J, Cui C, Ouyang T, Cao J, Wei X. A cutting-edge neural network approach for predicting the thermoelectric efficiency of defective gamma-graphyne nanoribbons. Sci Rep 2025; 15:1182. [PMID: 39775093 PMCID: PMC11707238 DOI: 10.1038/s41598-024-84074-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2024] [Accepted: 12/19/2024] [Indexed: 01/11/2025] Open
Abstract
This study predicts the thermoelectric figure of merit (ZT) for defective gamma-graphyne nanoribbons (γ-GYNRs) using binary coding, convolutional neural networks (CNN), long short-term memory networks (LSTM), and multi-scale feature fusion. The approach accurately predicts ZT values with only 500 initial structures (3% of 16,512 candidates), achieving an R2 above 0.91 and a mean absolute error (MAE) of 0.05 to 0.06. The use of artificial feature extraction combined with an attention mechanism reveals that the number and distribution of defects are crucial for achieving high ZT values. γ-GYNRs with moderate and evenly distributed defect count show superior thermoelectric performance. This demonstrates the effectiveness of neural networks in designing low-dimensional materials like γ-GYNRs and offers insights into exploring other materials with excellent thermoelectric properties.
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Affiliation(s)
- Jiayi Guo
- Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China
- College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang, 421002, People's Republic of China
| | - Chunfeng Cui
- Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Tao Ouyang
- Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China
| | - Juexian Cao
- Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China.
| | - Xiaolin Wei
- Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, People's Republic of China.
- College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang, 421002, People's Republic of China.
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22
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Sorkin V, Zhou H, Yu ZG, Ang KW, Zhang YW. Impact of grain boundaries on the electronic properties and Schottky barrier height in MoS 2@Au heterojunctions. Phys Chem Chem Phys 2025; 27:905-914. [PMID: 39663946 DOI: 10.1039/d4cp03686g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2024]
Abstract
Using density functional theory (DFT) calculations we thoroughly explored the influence of grain boundaries (GBs) in monolayer MoS2 composed of S-polar (S5|7), Mo-polar (Mo5|7), and (4|8) edge dislocation, as well as an edge dislocation-double S vacancy complex (S4|6), and a dislocation-double S interstitial complex (S6|8), respectively, on the electronic properties of MoS2 and the Schottky barrier height (SBH) in MoS2@Au heterojunctions. Our findings demonstrate that GBs formed by edge dislocations can significantly reduce the SBH in defect-free MoS2, with the strongest effect for zigzag (4|8) GBs (-20% reduction) and the weakest for armchair (5|7) GBs (-10% reduction). In addition, a larger tilt angle in the GBs leads to a more pronounced decrease in the SBH, suggesting that the modulation of SBH in the MoS2@Au heterostructure and analogous systems can be accomplished by GB engineering. Our findings also suggest that planar defects with high mobility in MoS2 may contribute to the memory switching effect observed in MoS2-based memtransistors and the reduction caused by the presence of planar defects can partially contribute to the discrepancy observed between experimental measurements and theoretical SBH predictions at the MoS2@Au heterojunction.
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Affiliation(s)
- Viacheslav Sorkin
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
| | - Hangbo Zhou
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
| | - Zhi Gen Yu
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
| | - Yong-Wei Zhang
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Republic of Singapore.
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23
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Imahori H, Akiyama M. Photoinduced charge separation at heterojunctions between two-dimensional layered materials and small organic molecules. MATERIALS HORIZONS 2025; 12:92-102. [PMID: 39359189 DOI: 10.1039/d4mh01296h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/04/2024]
Abstract
p-n heterojunctions are fundamental components for electronics and optoelectronics, including diodes, transistors, sensors, and solar cells. Over the past few decades, organic-inorganic p-n heterojunctions have garnered significant interest due to the diverse properties they exhibit, which are a result of the limitless combinations of organic molecules and inorganic materials. This review article concentrates on photoinduced charge separation and photocurrent generation at heterojunctions between two-dimensional layered materials and structurally well-defined organic small molecules. We highlight representative examples, including our work, and critically discuss their potential and perspectives.
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Affiliation(s)
- Hiroshi Imahori
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan.
- Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
- Institute for Liberal Arts and Sciences (ILAS), Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
| | - Midori Akiyama
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto, 615-8510, Japan.
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24
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Peng Q, Li J, Cai X, Chen G, Huang Z, Zheng L, Li H, Chen XJ, Hu Z. Atomistic Study on the Mechanical Properties of HOP-Graphene Under Variable Strain, Temperature, and Defect Conditions. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 15:31. [PMID: 39791790 PMCID: PMC11723169 DOI: 10.3390/nano15010031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2024] [Accepted: 12/26/2024] [Indexed: 01/12/2025]
Abstract
HOP-graphene is a graphene structural derivative consisting of 5-, 6-, and 8-membered carbon rings with distinctive electrical properties. This paper presents a systematic investigation of the effects of varying sizes, strain rates, temperatures, and defects on the mechanical properties of HOP-graphene, utilizing molecular dynamics simulations. The results revealed that Young's modulus of HOP-graphene in the armchair direction is 21.5% higher than that in the zigzag direction, indicating that it exhibits greater rigidity in the former direction. The reliability of the tensile simulations was contingent upon the size and strain rate. An increase in temperature from 100 K to 900 K resulted in a decrease in Young's modulus by 7.8% and 2.9% for stretching along the armchair and zigzag directions, respectively. An increase in the concentration of introduced void defects from 0% to 3% resulted in a decrease in Young's modulus by 24.7% and 23.1% for stretching along the armchair and zigzag directions, respectively. An increase in the length of rectangular crack defects from 0 nm to 4 nm resulted in a decrease in Young's modulus for stretching along the armchair and zigzag directions by 6.7% and 5.7%, respectively. Similarly, an increase in the diameter of the circular hole defect from 0 nm to 4 nm resulted in a decrease in Young's modulus along both the armchair and zigzag directions, with a corresponding reduction of 11.0% and 10.4%, respectively. At the late stage of tensile fracture along the zigzag direction, HOP-graphene undergoes a transformation to an amorphous state under tensile stress. Our results might contribute to a more comprehensive understanding of the mechanical properties of HOP-graphene under different test conditions, helping to land it in potential practical applications.
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Affiliation(s)
- Qing Peng
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China;
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Guangdong Aerospace Research Academy, Guangzhou 511458, China
| | - Jiale Li
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
| | - Xintian Cai
- School of Mechanical Engineering, Hubei University of Technology, Wuhan 430068, China
- Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan 430072, China
| | - Gen Chen
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
| | - Zeyu Huang
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
| | - Lihang Zheng
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
| | - Hongyang Li
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China; (J.L.); (G.C.); (L.Z.); (H.L.)
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
| | - Xiao-Jia Chen
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China;
| | - Zhongwei Hu
- Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, China
- Institute of Mechanical Engineering and Automation, Huaqiao University, Xiamen 361021, China
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25
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Luan J, Li J, Sun Y, Wei J, Wei M, Wang Y, Yin K, Zhu H, Pan H. Effects of transition metal substitution doping on the structure and magnetic properties of biphenylene. Phys Chem Chem Phys 2024; 26:29948-29954. [PMID: 39620250 DOI: 10.1039/d4cp03722g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2024]
Abstract
This study employed first-principles calculations to comprehensively explore the structural, electronic, and magnetic properties of transition metal-doped biphenylene networks (BPNs). Initially, we optimized the most stable structures of biphenylene doped with various transition metals (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) and analysed their doping energies and electronic structures in detail. The results indicate that the introduction of transition metals induces varying degrees of spin polarization. Specifically, the Cr-doped BPN exhibits almost 100% spin polarization at the Fermi level, exhibiting the properties of a half-metal or a spin-gapless semiconductor. In contrast, V-doped, Mn-doped and Co-doped BPNs show incomplete spin polarization, and exhibit antiferromagnetic like properties on the C atom. Furthermore, an analysis of the energy differences between the spin states and the non-spin states confirmed the stability of spin states, providing theoretical support for the application of BPNs as a new class of magnetic materials. In summary, through transition metal doping, BPNs exhibit promising applications, particularly in the fields of magnetic storage and magnetic sensors, highlighting their significant potential.
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Affiliation(s)
- Jinfeng Luan
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Jiangwen Li
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Yuanyuan Sun
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Jie Wei
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Mingzhen Wei
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Youchun Wang
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Ketao Yin
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
| | - Hongyang Zhu
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
- Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104, USA
| | - Hongzhe Pan
- School of Physics and Electronic Engineering, LinYi University, LinYi 276000, China.
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26
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Nicks J, Roseveare TM, Harris MS, Ashworth DJ, Danczuk G, Brammer L, Foster JA. Liquid exfoliation of a series of expanded layered Cu(II)-paddlewheel metal-organic frameworks to form nanosheets. NANOSCALE 2024; 16:21908-21915. [PMID: 39503483 DOI: 10.1039/d4nr02663b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/06/2024]
Abstract
Ultrasonic liquid exfoliation provides a convenient route for converting layered materials into nanosheets. However, the relationship between the structure and morphology of the bulk materials and the properties of the resulting nanosheets remains poorly understood. In this work, we prepare an isoreticular series of layered metal-organic frameworks (MOFs) based on linear aromatic dicarboxylate derivatives (L1, L2, L3) with three different linker lengths (L3 > L2 > L1) and using copper(II) nitrate and acetate as metal ion sources. Liquid exfoliation of large crystals of all three MOFs [Cu2(L)2](solvent)2, synthesised from Cu(NO3)2, produced monolayer nanosheets with longer linkers leading to larger lateral dimensions. Exfoliation of smaller MOF crystals, formed using the copper(II) acetate salt under identical conditions, produced a much higher concentration of multi-layer nanosheets with smaller lateral dimensions. These results indicate that the initial crystal size plays an important role in determining both the lateral dimensions and the thicknesses of nanosheets. Such insights contribute to a deeper understanding of the design principles governing metal-organic framework nanosheets (MONs) and other two-dimensional materials.
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Affiliation(s)
- Joshua Nicks
- Department of Chemistry, University of Sheffield, Sheffield, UK.
| | | | - Michael S Harris
- Department of Chemistry, University of Sheffield, Sheffield, UK.
| | - David J Ashworth
- Department of Chemistry, University of Sheffield, Sheffield, UK.
| | - George Danczuk
- Department of Chemistry, University of Sheffield, Sheffield, UK.
| | - Lee Brammer
- Department of Chemistry, University of Sheffield, Sheffield, UK.
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27
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Yao CH, Gao H, Ping L, Gulo DP, Liu HL, Tuan Hung N, Saito R, Ling X. Nontrivial Raman Characteristics in 2D Non-Van der Waals Mo 5N 6. ACS NANO 2024; 18:32458-32467. [PMID: 39531421 DOI: 10.1021/acsnano.4c06250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Resonant Raman spectra of a two-dimensional (2D) non-van der Waals (vdW) material, molybdenum nitride (Mo5N6), are measured across varying thicknesses, ranging from a few to tens of nanometers. Fifteen distinct Raman peaks are observed experimentally, and their assignments are made using first-principles calculations for the most stable AABB-stacking structure of Mo5N6. The assignments are further supported by angular-dependent Raman measurements for all peaks, except the most intense one at 215 cm-1. Calculations reveal that the 215 cm-1 peak does not appear for three-dimensional molybdenum nitrides and is not a first-order Raman-active mode. We further investigated the origin of the 215 cm-1 peak and assigned it as a defect-induced double-resonance peak. Moreover, thickness-dependent Raman measurements reveal that both the 215 and 540 cm-1 peaks─assigned to out-of-plane and in-plane modes, respectively─blue shift as thickness increases, reaching a plateau around 20 nm. This thickness-dependent Raman shift over a wide thickness range is nontrivial compared to other common vdW 2D materials and is attributed to the much stronger stacking interaction between the constituent layers in non-vdW materials. This finding highlights Raman spectroscopy as a valuable tool for characterizing the thickness of 2D non-vdW materials.
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Affiliation(s)
- Ching-Hsiang Yao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Hongze Gao
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Lu Ping
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | | | - Hsiang-Lin Liu
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Nguyen Tuan Hung
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai 980-8578, Japan
| | - Riichiro Saito
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
- Department of Physics, Tohoku University, Sendai 980-8578, Japan
| | - Xi Ling
- Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States
- Photonics Center, Boston University, Boston, Massachusetts 02215, United States
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28
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Zhang S, Cheng W, Jin L, Liu Y, Dai X, Liu G, Zhang X. Multiple Weyl fermions and topological phase transition in two-dimensional ferromagnetic CrS 2. Phys Chem Chem Phys 2024. [PMID: 39584390 DOI: 10.1039/d4cp03606a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2024]
Abstract
The study of topological states in two-dimensional (2D) systems, especially with magnetic properties, has recently gained significant attention owing to their potential in spintronics and nanotechnology. Here, we propose a 2D ferromagnetic (FM) material, CrS2, which hosts multiple Weyl points (WPs) and can undergo a topological phase transition by rotating the magnetization direction. Based on first-principles calculations, we identify distinct Weyl points around the Fermi level: W1, W2, and W3. These points appear in both spin channels and include various types: type-I, type-II and type-III WPs. Corresponding Fermi arcs are clearly observed at the material edges. CrS2 displays a FM ground state with the easy magnetization direction along the c-axis. When the magnetization direction is rotated in the x-y plane, the W1 and W3 points open gaps, with the gap values remaining the same in all magnetization directions. The W2 can maintain a crossing at specific in-plane magnetization directions, indicating that the material retains its Weyl state. Additionally, we examine the effects of biaxial and uniaxial strains on electronic properties. Weyl points remain stable under biaxial strain of less than ±5%, but they disappear under uniaxial strain. In summary, our work proposes a 2D FM material with multiple coexisting Weyl fermions, where the topological states can be tuned by an external magnetic field.
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Affiliation(s)
- Shuo Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
- Hebei Engineering Laboratory of Photoelectronic Functional Crystals, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Wenzhang Cheng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Lei Jin
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Ying Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Xuefang Dai
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Guodong Liu
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
| | - Xiaoming Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
- Hebei Engineering Laboratory of Photoelectronic Functional Crystals, and School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
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29
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Bao K, Zhao Y, Ding W, Xiao Y, Yang B. First Principles Study of p-Type Transition and Enhanced Optoelectronic Properties of g-ZnO Based on Diverse Doping Strategies. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1863. [PMID: 39683252 DOI: 10.3390/nano14231863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2024] [Revised: 11/12/2024] [Accepted: 11/12/2024] [Indexed: 12/18/2024]
Abstract
By utilizing first principles calculations, p-type transition in graphene-like zinc oxide (g-ZnO) through elemental doping was achieved, and the influence of different doping strategies on the electronic structure, energy band structure, and optoelectronic properties of g-ZnO was investigated. This research study delves into the effects of strategies such as single-acceptor doping, double-acceptor co-doping, and donor-acceptor co-doping on the properties of g-ZnO. This study found that single-acceptor doping with Li and Ag elements can form shallow acceptor levels, thereby facilitating p-type conductivity. Furthermore, the introduction of the donor element F can compensate for the deep acceptor levels formed by double-acceptor co-doping, transforming them into shallow acceptor levels and modulating the energy band structure. The co-doping strategy involving double-acceptor elements and a donor element further optimizes the properties of g-ZnO, such as reducing the bandgap and enhancing carrier mobility. Additionally, in terms of optical properties, g-Zn14Li2FO15 demonstrates outstanding performance in the visible-light region compared with other doping systems, especially generating a higher absorption peak around the wavelength of 520 nm. These findings provide a theoretical foundation for the application of g-ZnO in optoelectronic devices.
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Affiliation(s)
- Kaiqi Bao
- School of Mechanical Engineering, Jiangsu University of Technology, Changzhou 213001, China
| | - Yanfang Zhao
- School of Mechanical Engineering, Jiangsu University of Technology, Changzhou 213001, China
| | - Wei Ding
- School of Electrical Engineering and Automation, Changshu Institute of Technology, Changshu 215500, China
| | - Yuanbin Xiao
- School of Mechanical Engineering, Jiangsu University of Technology, Changzhou 213001, China
- Key Laboratory of Materials Surface Science and Technology, Jiangsu Province Higher Education Institutes (Changzhou University), Changzhou 213164, China
| | - Bing Yang
- Centre for Advanced Laser Manufacturing (CALM), School of Mechanical Engineering, Shandong University of Technology, Zibo 255000, China
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30
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Du A, Tang Y, Kuang L, Qiu S, Yang T, Cai J, Yan C. The quantum anomalous Hall effect and strong robustness in two-dimensional p-state Dirac half-metals Y 3X 2 (Y = Li, Na; X = Se, Te). Phys Chem Chem Phys 2024. [PMID: 39569600 DOI: 10.1039/d4cp03830d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2024]
Abstract
Based on first-principles calculations, we have predicted a novel group of 2D p-state Dirac half-metal (DHM) materials, Y3X2 (Y = Li, Na; X = Se, Te) monolayers. All the monolayers exhibit intrinsic ferromagnetism. Among them, Li3Te2 and Na3Se2 open topologically nontrivial band gaps of 4.0 meV and 5.0 meV considering spin-orbit coupling (SOC), respectively. The Curie temperature of Li3Te2 is 355 K. The non-zero Chern number and the presence of edge states further confirm that the Li3Te2 monolayer is a room-temperature ferromagnetic material and a quantum anomalous Hall (QAH) insulator. Additionally, it is found that Y3X2 (Y = Li, Na; X = Se, Te) monolayers exhibit strong robustness against strain and electric fields. Finally, we have proposed the growth of Y3X2 (Y = Li, Na; X = Se, Te) monolayers on h-BN substrates, which shows promise for experimental synthesis. Our research indicates that Y3X2 (Y = Li, Na; X = Se, Te) monolayers exhibit strong robustness as DHMs, showcasing significant potential for realizing the intrinsic quantum anomalous Hall effect (QAHE).
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Affiliation(s)
- Ao Du
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Yanghao Tang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Long Kuang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Shi Qiu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Ting Yang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
| | - Jinming Cai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
- Southwest United Graduate School, Kunming, 650000, People's Republic of China
| | - Cuixia Yan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, People's Republic of China.
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31
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Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2403129. [PMID: 39030967 PMCID: PMC11600706 DOI: 10.1002/smll.202403129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/17/2024] [Indexed: 07/22/2024]
Abstract
The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
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Affiliation(s)
- Tiantian Cheng
- School of Microelectronics and School of Integrated CircuitsSchool of Information Science and TechnologyNantong UniversityNantong226019P. R. China
| | - Yuxin Meng
- School of Microelectronics and School of Integrated CircuitsSchool of Information Science and TechnologyNantong UniversityNantong226019P. R. China
| | - Man Luo
- School of Microelectronics and School of Integrated CircuitsSchool of Information Science and TechnologyNantong UniversityNantong226019P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter WavesCity University of Hong KongHong Kong SAR999077P. R. China
| | - Jiachi Xian
- School of Microelectronics and School of Integrated CircuitsSchool of Information Science and TechnologyNantong UniversityNantong226019P. R. China
| | - Wenjin Luo
- Department of Physics and JILAUniversity of ColoradoBoulderCO80309USA
| | - Weijun Wang
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter WavesCity University of Hong KongHong Kong SAR999077P. R. China
| | - Fangyu Yue
- School of Physics and Electronic ScienceEast China Normal UniversityShanghai200241P. R. China
| | - Johnny C. Ho
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter WavesCity University of Hong KongHong Kong SAR999077P. R. China
| | - Chenhui Yu
- School of Microelectronics and School of Integrated CircuitsSchool of Information Science and TechnologyNantong UniversityNantong226019P. R. China
| | - Junhao Chu
- School of Physics and Electronic ScienceEast China Normal UniversityShanghai200241P. R. China
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Santos-Castro G, Teles LK, Guilhon Mitoso I, Pereira JM. Tight-binding model of Pt-based jacutingaites as combination of the honeycomb and kagome lattices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 37:035502. [PMID: 39419107 DOI: 10.1088/1361-648x/ad8853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Accepted: 10/17/2024] [Indexed: 10/19/2024]
Abstract
We introduce a refined tight-binding (TB) model for Pt-based jacutingaite materialsPt2NX3, (N= Zn, Cd, Hg; X = S, Se, Te), offering a detailed representation of the low-energy physics of its monolayers. This model incorporates all elements with significant spin-orbit coupling contributions, which are essential for understanding the topological energy gaps in these materials. Through comparison with first-principles calculations, we meticulously fitted the TB parameters, ensuring an accurate depiction of the energy bands near the Fermi level. Our model reveals the intricate interplay between the Pt 3eandNmetal orbitals, forming distinct kagome and honeycomb lattice structures. Applying this model, we explore the edge states of Pt-based jacutingaite monolayer nanoribbons, highlighting the sensitivity of the topological edge states dispersion bands to the nanostructures geometric configurations. These insights not only deepen our understanding of jacutingaite materials but also assist in tailoring their electronic properties for future applications.
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Affiliation(s)
- G Santos-Castro
- Grupo de Teoria da Matéria Condensada, Departamento de Física, Universidade Federal do Ceará, 60455-760 Fortaleza, Ceará, Brazil
| | - L K Teles
- Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, DCTA, 12228-900 São José dos Campos, Brazil
| | - I Guilhon Mitoso
- Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, DCTA, 12228-900 São José dos Campos, Brazil
| | - J M Pereira
- Grupo de Teoria da Matéria Condensada, Departamento de Física, Universidade Federal do Ceará, 60455-760 Fortaleza, Ceará, Brazil
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Coppola CM, De Carlo M, De Leonardis F, Passaro VMN. i-PHAOS: An Overview with an Open-Source Collaborative Database on Miniaturized Integrated Spectrometers. SENSORS (BASEL, SWITZERLAND) 2024; 24:6715. [PMID: 39460195 PMCID: PMC11511550 DOI: 10.3390/s24206715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2024] [Revised: 10/14/2024] [Accepted: 10/15/2024] [Indexed: 10/28/2024]
Abstract
On-chip spectrometers are increasingly becoming tools that might help in everyday life needs. The possibility offered by several available integration technologies and materials to be used to miniaturize spectrometers has led to a plethora of very different devices, that in principle can be compared according to their metrics. Having access to a reference database can help in selecting the best-performing on-chip spectrometers and being up to date in terms of standards and developments. In this paper, an overview of the most relevant publications available in the literature on miniaturized spectrometers is reported and a database is provided as an open-source project to which researchers can have access and participate in order to improve the share of knowledge in the interested scientific community.
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Affiliation(s)
- Carla Maria Coppola
- Photonics Research Group, Dipartimento di Ingegneria Elettrica e dell’Informazione, Politecnico di Bari, Via E. Orabona, 4, 70126 Bari, Italy; (M.D.C.); (F.D.L.); (V.M.N.P.)
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Jin W, Zuo J, Pang J, Yang J, Yu X, Zhong H, Kuang X, Lu C. Two-Dimensional MoSi 2N 4 Family: Progress and Perspectives Form Theory. J Phys Chem Lett 2024; 15:10284-10294. [PMID: 39361969 DOI: 10.1021/acs.jpclett.4c02452] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/05/2024]
Abstract
Recently, a new two-dimensional (2D) layered MoSi2N4 has been successfully synthesized by chemical vapor deposition without knowing the 3D counterparts [ Science 2020, 369, 670-674]. The unique septuple-atomic-layer structure and diverse composition of MoSi2N4 have drawn tremendous interest in studying 2D MA2Z4 systems based on the MoSi2N4 structure. As an emerging family of 2D materials, MA2Z4 materials exhibit a wide range of properties and excellent tunability, making them highly promising for various applications. Herein, we summarize recent significant progress in property characterization of the MA2Z4 family. The electronic, magnetic, thermal transport, and superconducting properties, including their tunability through strain engineering and elemental substitution, are presented and elaborated in detail. Further perspectives and new opportunities of the emerging MA2Z4 family are presented at the end of this Perspective.
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Affiliation(s)
- Wenyuan Jin
- Institute of Physics, Henan Academy of Sciences, Zhengzhou 450046, China
| | - Jingning Zuo
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan 430074, China
| | - Jiafei Pang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
- Department of Mechanical Engineering and Science, Kyoto University, Kyoto 615-8540, Japan
| | - Jinni Yang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Xin Yu
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Hongxia Zhong
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan 430074, China
| | - Xiaoyu Kuang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Cheng Lu
- School of Mathematics and Physics, China University of Geosciences (Wuhan), Wuhan 430074, China
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Wei Y, Gao F, Yuan J, Xie H, Xiao D, Zhang H, Wang Y, Ren W. Computational screening of single-atom transition metals on boron-rich boron nitride nanosheets for efficient hydrogen evolution catalysis in all pH range. J Chem Phys 2024; 161:144108. [PMID: 39382134 DOI: 10.1063/5.0226662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Accepted: 09/23/2024] [Indexed: 10/10/2024] Open
Abstract
Low-cost and high-efficiency catalysts are of crucial importance for the electrocatalytic hydrogen evolution reaction (HER). Two-dimensional (2D) boron nitride (B-N) compounds formed by the combination of boron and nitrogen atoms of group III and V elements are promising candidates for electrocatalytic HER due to their significant electronic properties. Hence, an electrocatalyst is computer-aided designed with isolated single atoms of 3d, 4d, and 5d transition metals supported on 2D B-N (B2N, B5N3, and B7N5) monolayers to fabricate single-atom catalysts (SACs) with an excellent HER performance. Moreover, pH modulations are considered to improve the HER activity theoretically based on first-principles calculation. Our results indicate that B-N compounds surface doping with transition metal atoms can effectively enhance the HER catalytic performance over a wide range of pH. Among all SACs studied, Co-, Ti-, V-, Nb-, Ru-, Tc-, Zr-, and Os-embedded B2N, Sc-, Cr-, Mn-, Ti-, and Y-embedded B5N3, and Sc- and Mn-embedded B7N5 have excellent catalytic activity under acidic conditions, while Mo-, Ir-, Re-, Ta-, and W-embedded B2N and Ti- and Fe-embedded B7N5 show high catalytic activity under alkaline conditions. Interestingly, Hf@B2N and V@B5N3 systems exhibit promising catalytic activity under acidic, neutral, and alkaline conditions. Our work offers cost-effective candidates with a wide pH range HER performance for exploring ideal electrocatalysts.
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Affiliation(s)
- Yuhua Wei
- Department of Physics, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Feng Gao
- Academy of Edge Intelligence Hangzhou City University, Hangzhou City University, Hangzhou, Zhejiang 310015, China
| | - Jiantao Yuan
- Academy of Edge Intelligence Hangzhou City University, Hangzhou City University, Hangzhou, Zhejiang 310015, China
| | - Hao Xie
- Academy of Edge Intelligence Hangzhou City University, Hangzhou City University, Hangzhou, Zhejiang 310015, China
| | - Duo Xiao
- Academy of Edge Intelligence Hangzhou City University, Hangzhou City University, Hangzhou, Zhejiang 310015, China
| | - Hui Zhang
- Department of Physics, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Yin Wang
- Department of Physics, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Wei Ren
- Department of Physics, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
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36
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Liu Q, Wang X, Wang X. Sub-1 nm Materials Chemistry: Challenges and Prospects. J Am Chem Soc 2024; 146:26587-26602. [PMID: 39312400 DOI: 10.1021/jacs.4c08828] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
Subnanometer materials (SNMs) refer to nanomaterials with a feature size close to 1 nm, similar to the diameter of a single polymer, DNA strand, and a single cluster/unit cell. The growth and assembly of subnanometer building blocks can be controlled by interactions at atomic levels, representing the limit for the precise manipulation of materials. The size, geometry, and flexibility of 1D SNMs inorganic backbones are similar to the polymer chains, bringing excellent gelability, adhesiveness, and processability different from inorganic nanocrystals. The ultrahigh surface atom ratio of SNMs results in significantly increased surface energy, leading to significant rearrangement of surface atoms. Unconventional phases, immiscible metal alloys, and high entropy materials with few atomic layers can be stabilized, and the spontaneous twisting of SNMs may induce the intrinsic structural chirality. Electron delocalization may also emerge at the subnanoscale, giving rise to the significantly enhanced catalytic activity. In this perspective, we summarized recent progress on SNMs, including their synthesis, polymer-like properties, metastable phases, structural chirality, and catalytic properties, toward energy conversion. As a critical size region in nanoscience, the development of functional SNMs may fuse the boundary of inorganic materials and polymers and conduce to the precise manufacturing of materials at atomic levels.
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Affiliation(s)
- Qingda Liu
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Xiaoya Wang
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Xun Wang
- Engineering Research Center of Advanced Rare Earth Materials, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
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Mantravadi A, Weaver BC, Chen S, Mukta S, Abusa Y, Sarkar A, Sun Y, Mudryk Y, Gundlach-Graham A, Ho KM, Lebedev OI, Zaikina JV. When van der Waals Met Kagome: A 2D Antimonide with a Vanadium-Kagome Network. J Am Chem Soc 2024; 146:26786-26800. [PMID: 39305249 DOI: 10.1021/jacs.4c07285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/03/2024]
Abstract
2D materials showcase unconventional properties emerging from quantum confinement effects. In this work, a "soft chemical" route allows for the deintercalation of K+ from the layered antimonide KV6Sb6, resulting in the discovery of a new metastable 2D-Kagome antimonide K0.1(1)V6Sb6 with a van der Waals gap of 3.2 Å. The structure of K0.1(1)V6Sb6 was determined via the synergistic techniques, including X-ray pair distribution function analysis, advanced transmission electron microscopy, and density functional theory calculations. The K0.1(1)V6Sb6 compound crystallizes in the monoclinic space group C2/m (a = 9.57(2) Å, b = 5.502(8) Å, c = 10.23(2) Å, β = 97.6(2)°, Z = 2). The [V6Sb6] layers in K0.1(1)V6Sb6 are retained upon deintercalation and closely resemble the layers in the parent compound, yet deintercalation results in a relative shift of the adjacent [V6Sb6] layers. The magnetic properties of the K0.1(1)V6Sb6 phase in the 2-300 K range are comparable to those of KV6Sb6 and another Kagome antimonide KV3Sb5, consistent with nearly temperature-independent paramagnetism. Electronic band structure calculation suggests a nontrivial band topology with flat bands and opening of band crossing afforded by deintercalation. Transport property measurements reveal a metallic nature for K0.1(1)V6Sb6 and a low thermal conductivity of 0.6 W K-1 m-1 at 300 K. Additionally, ion exchange in KV6Sb6 via a solvothermal route leads to a successful partial exchange of K+ with A+ (A = Na, Rb, and Cs). This study highlights the tunability of the layered structure of the KV6Sb6 compound, providing a rich playground for the realization of new 2D materials.
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Affiliation(s)
| | - Bradyn C Weaver
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
| | - Shiya Chen
- Department of Physics, Xiamen University, Xiamen 361005, China
| | - Shahnaz Mukta
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
| | - Yao Abusa
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
| | - Arka Sarkar
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
- Ames National Laboratory, US Department of Energy, Ames, Iowa 50011, United States
| | - Yang Sun
- Department of Physics, Xiamen University, Xiamen 361005, China
| | - Yaroslav Mudryk
- Ames National Laboratory, US Department of Energy, Ames, Iowa 50011, United States
| | | | - Kai-Ming Ho
- Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, United States
| | - Oleg I Lebedev
- Laboratoire CRISMAT, ENSICAEN-CNRS, UMR 6508, 14050 Caen, France
| | - Julia V Zaikina
- Department of Chemistry, Iowa State University, Ames, Iowa 50011, United States
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38
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Ni X. Non-metallic doped GeC monolayer: tuning electronic and photo-electrocatalysis for water splitting. Front Chem 2024; 12:1425698. [PMID: 39411267 PMCID: PMC11473344 DOI: 10.3389/fchem.2024.1425698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Accepted: 09/16/2024] [Indexed: 10/19/2024] Open
Abstract
We conducted a first-principles study on the electronic, magnetic, and optical characteristics of non-metallic atoms (B, C, F, H, N, O, P, S, and Si) doped in single-layer carbon germanium (GeC). The findings indicate that the introduction of various non-metallic atoms into the monolayer GeC leads to modifications in its band structure properties. Different non-metallic atoms doped in single-layer GeC will produce both magnetic and non-magnetic properties. B-, H-, N-, and P-doped GeC systems exhibit magnetic properties, while C-, F-, O-, S-, and Si-doped single-layer GeC systems exhibit non-magnetic properties. Different non-metallic-doped single-layer GeC systems will produce semiconductor, semimetallic, and metallic properties. The C-, N-, O-, P-, S-, and Si-doped GeC systems still exhibit semiconductor properties. The H-doped GeC system exhibits semimetallic properties, while the B- and F-doped GeC systems exhibit metallic properties. Other than that, the doping of B, H, N, and P atoms can modulate the magnetism of single-layer GeC. Subsequently, we studied the influence of the doping behavior on the work function, where the work function of the single-layer GeC system doped with P atoms is very small, indicating that its corresponding doping system (P-doped GeC system) can produce a good field emission effect. In the optical spectrum, the doped systems have a certain influence in the far ultraviolet region. Furthermore, our results showed that S- and Si-doped single-layer GeC systems are conducive to photocatalysis compared to the single-layer GeC system.
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Affiliation(s)
- Xiangxiang Ni
- School of Automobile and Traffic Engineering, Guangzhou City University of Technology, Guangzhou, China
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39
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Singh M, Bianco D, Adam J, Capaccio A, Clemente S, Del Sorbo MR, Feoli C, Kaur J, Nappi C, Panico M, Rusciano G, Rossi M, Sasso A, Valadan M, Cuocolo A, Battista E, Netti PA, Altucci C. Gamma rays impact on 2D-MoS 2 in water solution. Sci Rep 2024; 14:22130. [PMID: 39333585 PMCID: PMC11437032 DOI: 10.1038/s41598-024-69410-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Accepted: 08/05/2024] [Indexed: 09/29/2024] Open
Abstract
Two-dimensional transition metal dichalcogenides, particularly MoS2, are interesting materials for many applications in aerospace research, radiation therapy and bioscience more in general. Since in many of these applications MoS2-based nanomaterials can be placed in an aqueous environment while exposed to ionizing radiation, both experimental and theoretical studies of their behaviour under these conditions is particularly interesting. Here, we study the effects of tiny imparted doses of 511 keV photons to MoS2 nanoflakes in water solution. To the best of our knowledge, this is the first study in which ionizing radiation on 2D-MoS2 occurs in water. Interestingly, we find that, in addition to the direct interaction between high-energy photons and nanoflakes, reactive chemical species, generated by γ-photons induced radiolysis of water, come into play a relevant role. A radiation transport Monte Carlo simulation allowed determining the elements driving the morphological and spectroscopical changes of 2D-MoS2, experimentally monitored by SEM microscopy, DLS, Raman and UV-vis spectroscopy, AFM, and X-ray photoelectron techniques. Our study demonstrates that radiolysis products affect the Molybdenum oxidation state, which is massively changed from the stable + 4 and + 6 states into the rarer and more unstable + 5. These findings will be relevant for radiation-based therapies and diagnostics in patients that are assuming drugs or contrast agents containing 2D-MoS2 and for aerospace biomedical applications of 2DMs investigating their actions into living organisms on space station or satellites.
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Affiliation(s)
- Manjot Singh
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy
- National Institute of Nuclear Physics, Section of Naples, Naples, Italy
| | - Davide Bianco
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy
- National Institute of Nuclear Physics, Section of Naples, Naples, Italy
- Italian Aerospace Research Centre (CIRA), Capua, Italy
| | - Jaber Adam
- Department of Physics "Ettore Pancini", University of Naples, Federico II, Naples, Italy
| | - Angela Capaccio
- Department of Physics "Ettore Pancini", University of Naples, Federico II, Naples, Italy
- Institute of Biosciences and Bio Resources (IBBR), National Research Council of Italy, Naples, Italy
| | | | | | - Chiara Feoli
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy
| | - Jasneet Kaur
- Department of Physics "Ettore Pancini", University of Naples, Federico II, Naples, Italy
| | - Carmela Nappi
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy
| | | | - Giulia Rusciano
- Department of Physics "Ettore Pancini", University of Naples, Federico II, Naples, Italy
| | - Manuela Rossi
- Department of Earth Science, Environment and Resources, University of Naples, Federico II, Naples, Italy
| | - Antonio Sasso
- Department of Physics "Ettore Pancini", University of Naples, Federico II, Naples, Italy
| | - Mohammadhassan Valadan
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy
- National Institute of Nuclear Physics, Section of Naples, Naples, Italy
- Superconducting and Other Innovative Materials and Devices Institute, SPIN-CNR, Naples, Italy
| | - Alberto Cuocolo
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy.
| | - Edmondo Battista
- Center for Advanced Biomaterials for HealthCare (CABHC), Italian Institute of Technology, Naples, Italy.
- Department of Innovative Technologies in Medicine & Dentistry (DTIMO), University "G. d'Annunzio" Chieti-Pescara, Chieti, Italy.
| | - Paolo Antonio Netti
- Center for Advanced Biomaterials for HealthCare (CABHC), Italian Institute of Technology, Naples, Italy.
- Interdisciplinary Research Centre on Biomaterials (CRIB, University of Naples, Federico II, Naples, Italy.
- Department of Chemical, Materials and Industrial Engineering, University of Naples, Federico II, Naples, Italy.
| | - Carlo Altucci
- Department of Advanced Biomedical Sciences, University of Naples, Federico II, Naples, Italy.
- National Institute of Nuclear Physics, Section of Naples, Naples, Italy.
- Institute of Applied Sciences and Intelligent Systems, ISASI-CNR, Naples, Italy.
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40
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Xiao S, Hao J, Shi T, Jin J, Wu B, Peng Q. Effects of size and shape of hole defects on mechanical properties of biphenylene: a molecular dynamics study. NANOTECHNOLOGY 2024; 35:485703. [PMID: 39208809 DOI: 10.1088/1361-6528/ad7509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 08/29/2024] [Indexed: 09/04/2024]
Abstract
The distinctive multi-ring structure and remarkable electrical characteristics of biphenylene render it a material of considerable interest, notably for its prospective utilization as an anode material in lithium-ion batteries. However, understanding the mechanical traits of biphenylene is essential for its application, particularly due to the volumetric fluctuations resulting from lithium ion insertion and extraction during charging and discharging cycles. In this regard, this study investigates the performance of pristine biphenylene and materials embedded with various types of hole defects under uniaxial tension utilizing molecular dynamics simulations. Specifically, from the stress‒strain curves, we obtained key mechanical properties, including toughness, strength, Young's modulus and fracture strain. It was observed that various near-circular hole (including circular, square, hexagonal, and octagonal) defects result in remarkably similar properties. A more quantitative scaling analysis revealed that, in comparison with the exact shape of the defect, the area of the defect is more critical for determining the mechanical properties of biphenylene. Our finding might be beneficial to the defect engineering of two-dimensional materials.
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Affiliation(s)
- Shuoyang Xiao
- School of Physics and Astronomy, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Jiannan Hao
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Tan Shi
- School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Jianfeng Jin
- School of Materials Science and Engineering, Northeastern University, Shenyang 110819, People's Republic of China
| | - Bin Wu
- School of Physics and Astronomy, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Qing Peng
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Guangdong Aerospace Research Academy, Guangzhou 511458, People's Republic of China
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Maia KCB, Densy Dos Santos Francisco A, Moreira MP, Nascimento RSV, Grasseschi D. Advancements in Surfactant Carriers for Enhanced Oil Recovery: Mechanisms, Challenges, and Opportunities. ACS OMEGA 2024; 9:36874-36903. [PMID: 39246502 PMCID: PMC11375729 DOI: 10.1021/acsomega.4c04058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2024] [Revised: 07/04/2024] [Accepted: 07/09/2024] [Indexed: 09/10/2024]
Abstract
Enhanced oil recovery (EOR) techniques are crucial for maximizing the extraction of residual oil from mature reservoirs. This review explores the latest advancements in surfactant carriers for EOR, focusing on their mechanisms, challenges, and opportunities. We delve into the role of inorganic nanoparticles, carbon materials, polymers and polymeric surfactants, and supramolecular systems, highlighting their interactions with reservoir rocks and their potential to improve oil recovery rates. The discussion includes the formulation and behavior of nanofluids, the impact of surfactant adsorption on different rock types, and innovative approaches using environmentally friendly materials. Notably, the use of metal oxide nanoparticles, carbon nanotubes, graphene derivatives, and polymeric surfacants and the development of supramolecular complexes for managing surfacant delivery are examined. We address the need for further research to optimize these technologies and overcome current limitations, emphasizing the importance of sustainable and economically viable EOR methods. This review aims to provide a comprehensive understanding of the emerging trends and future directions in surfactant carriers for EOR.
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Affiliation(s)
- Kelly C B Maia
- Instituto de Química, Universidade Federal do Rio de Janeiro (UFRJ), 21941-909 Rio de Janeiro, Brazil
| | | | - Mateus Perissé Moreira
- Instituto de Química, Universidade Federal do Rio de Janeiro (UFRJ), 21941-909 Rio de Janeiro, Brazil
| | - Regina S V Nascimento
- Instituto de Química, Universidade Federal do Rio de Janeiro (UFRJ), 21941-909 Rio de Janeiro, Brazil
| | - Daniel Grasseschi
- Instituto de Química, Universidade Federal do Rio de Janeiro (UFRJ), 21941-909 Rio de Janeiro, Brazil
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Barriales K, Khandaker S, Jain A, Sementa D, Nair MN, Wang T, Tang J, DelRe C, Ulijn RV. Aqueous Graphene Dispersion and Biofunctionalization via Enzymatic Oxidation of Tripeptides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400775. [PMID: 38829024 DOI: 10.1002/smll.202400775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 05/09/2024] [Indexed: 06/05/2024]
Abstract
Graphene, a 2D carbon material, possesses extraordinary mechanical, electrical, and thermal properties, making it highly attractive for various biological applications such as biosensing, biotherapeutics, and tissue engineering. However, the tendency of graphene sheets to aggregate and restack hinders its dispersion in water, limiting these applications. Peptides, with their defined amino acid sequences and versatile functionalities, are compelling molecules with which to modify graphene-aromatic amino acids can strengthen interactions through π-stacking and charged groups can be chosen to make the sheets dispersible and stable in water. Here, a facile and green method for covalently functionalizing and dispersing graphene using amphiphilic tripeptides, facilitated by a tyrosine phenol side chain, through an aqueous enzymatic oxidation process is demonstrated. The presence of a second aromatic side chain group enhances this interaction through non-covalent support via π-π stacking with the graphene surface. Futhermore, the addition of charged moieties originating from either ionizable amino acids or terminal groups facilitates profound interactions with water, resulting in the dispersion of the newly functionalized graphene in aqueous solutions. This biofunctionalization method resulted in ≈56% peptide loading on the graphene surface, leading to graphene dispersions that remain stable for months in aqueous solutions outperforming currently used surfactants.
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Affiliation(s)
- Kenny Barriales
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
- Department of Chemistry, Hunter College, City University of New York, 695 Park Avenue, New York, NY, 10065, USA
- Ph.D. Program in Chemistry, The Graduate Center of the City University of New York, New York, NY, 10016, USA
| | - Shadman Khandaker
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
| | - Ankit Jain
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
- Ph.D. Program in Chemistry, The Graduate Center of the City University of New York, New York, NY, 10016, USA
- Department of Chemistry and biochemistry, Brooklyn College, City University of New York, 2900 Bedford Avenue, Brooklyn, NY, 11210, USA
| | - Deborah Sementa
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
| | - Maya Narayanan Nair
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
| | - Tong Wang
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
| | - Joel Tang
- Department of Chemistry, New York University, 32 Waverly Pl, New York, NY, 10003, USA
| | - Christopher DelRe
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
- Ph.D. Program in Chemistry, The Graduate Center of the City University of New York, New York, NY, 10016, USA
- Department of Chemistry, The City College of New York, 160 Convent Avenue, New York, NY, 10031, USA
| | - Rein V Ulijn
- Advanced Science Research Center (ASRC) at the Graduate Center, City University of New York (CUNY), 85 St Nicholas Terrace, New York, NY, 10031, USA
- Department of Chemistry, Hunter College, City University of New York, 695 Park Avenue, New York, NY, 10065, USA
- Ph.D. Program in Chemistry, The Graduate Center of the City University of New York, New York, NY, 10016, USA
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43
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Imahori H, Akiyama M. Molecular donor-acceptor linked systems as models for examining their interactions in excited states. J Chem Phys 2024; 161:080901. [PMID: 39171699 DOI: 10.1063/5.0222310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2024] [Accepted: 08/05/2024] [Indexed: 08/23/2024] Open
Abstract
Molecular donor-acceptor (D-A) linked systems have attracted significant attention due to their potential to address D-A interactions in excited states. In these systems, it is crucial to understand the interplay between electrons and spin behaviors, atomic nucleus movements (including vibration, rotation, fluctuation, and transfer), and collective motion (electron-phonon coupling) over time. Through intentional manipulation of locally excited, charge-transfer excited, and charge-separated states, along with modulation of dynamic effects (enhancement or restraint), we expect to unlock the full potential of D-A systems for photofunctions in electronics, energy, healthcare, and functional materials. In this perspective, we present our recent examples of D-A linked systems and related ones that address the aforementioned issues as part of our "Dynamic Exciton" research project in Japan.
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Affiliation(s)
- Hiroshi Imahori
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
- Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
- Institute for Liberal Arts and Sciences (ILAS), Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan
| | - Midori Akiyama
- Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
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44
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Tao ZG, Deng S, Prezhdo OV, Xiang H, Chu W, Gong XG. Tunable Ultrafast Charge Transfer across Homojunction Interface. J Am Chem Soc 2024; 146:24016-24023. [PMID: 39152917 DOI: 10.1021/jacs.4c07454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/19/2024]
Abstract
Charge transfer at heterojunction interfaces is a fundamental process that plays a crucial role in modern electronic and photonic devices. The essence of such charge transfer lies in the band offset, making charge transfer uncommon in a homojunction. Recently, sliding ferroelectricity has been proposed and confirmed in two-dimensional van der Waals stacked materials such as bilayer boron nitride. During the sliding of these layers, the band alignment shifts, creating conditions for charge separation at the interface. We employ ab initio nonadiabatic molecular dynamics simulations to elucidate the excited state carrier dynamics in bilayer boron pnictides. We propose that, akin to ferroelectric polarization flipping, the precise modulation of the distribution of excited state carriers can also be reached by sliding. Our results demonstrate that sliding induces a reversal of the frontier orbital distribution on the upper and lower layers, facilitating a robust interlayer carrier transfer. Notably, the interlayer carrier transfer is more pronounced in boron phosphide than in boron nitride, attributed to strong electron scattering in momentum space in boron nitride. We propose this novel method to manipulate carrier distribution and dynamics in a homojunction exhibiting sliding ferroelectricity, in general, paving a new way for developing advanced electronic and photonic devices.
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Affiliation(s)
- Zhi-Guo Tao
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Shihan Deng
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
- Department of Physics & Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Hongjun Xiang
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Weibin Chu
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Xin-Gao Gong
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
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45
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Hernandez JMG, Guerrero-Sanchez J, Rodriguez-Martinez JA, Takeuchi N. First-Principles Studies of the Electronic and Optical Properties of Two-Dimensional Arsenic-Phosphorus (2D As-P) Compounds. ACS OMEGA 2024; 9:35718-35729. [PMID: 39184510 PMCID: PMC11339837 DOI: 10.1021/acsomega.4c04108] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 07/29/2024] [Accepted: 08/01/2024] [Indexed: 08/27/2024]
Abstract
In this work, we propose the construction of a two-dimensional system based on the stable phases previously reported for the 2D arsenic and phosphorus compounds, with hexagonal and orthorhombic symmetries. Therefore, we have modeled one hexagonal and three possible orthorhombic structures. To ensure the dynamical stability, we performed phonon spectra calculations for each system. We found that all phases are dynamically stable. To ensure the thermodynamic and mechanical stabilities, we have calculated cohesive energies and elastic constants. Our results show that the criteria for the stabilities are all fulfilled. For these stable structures, we computed the electronic and optical properties from first-principles studies based on density functional theory. The computation of electronic band gaps was performed by using the GW approximation to overcome the underestimation of the results obtained from standard DFT approaches. To study the optical properties, we have computed the dielectric function imaginary part within the BSE approach, which takes into account the excitonic effects and allows us to calculate the exciton binding energies of each system. The study was complemented by the computation of the absorption coefficient. From our calculations, it can be established that the 2D As-P systems are good candidates for several technological applications.
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Affiliation(s)
- Jose Mario Galicia Hernandez
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
| | - Jonathan Guerrero-Sanchez
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
| | | | - Noboru Takeuchi
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, Baja California 22860, Mexico
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46
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Pang Z, Chen Z, Li J, Liu D, Zhang G, Liu C, Du C, Zhou W. Advances in Inorganic Foam Materials Fabricated Via Blowing Strategy: A Comprehensive Review. ACS NANO 2024; 18:21747-21778. [PMID: 39105765 DOI: 10.1021/acsnano.4c05321] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/07/2024]
Abstract
Two-dimensional (2D) materials with excellent properties and widespread applications have been explosively investigated. However, their conventional synthetic methods exhibit concerns of limited scalability, complex purification process, and incompetence of prohibiting their restacking. The blowing strategy, characterized by gas-template, low-cost, and high-efficiency, presents a valuable avenue for the synthesis of 2D-based foam materials and thereby addresses these constraints. Whereas, its comprehensive introduction has been rarely outlined so far. This review commences with a synopsis of the blowing strategy, elucidating its development history, the statics and kinetics of the blowing process, and the choice of precursor and foaming agents. Thereafter, we dwell at length on across-the-board foams enabled by the blowing route, like BxCyNz foams, carbon foams, and diverse composite foams consisting of carbon and metal compounds. Following that, a wide-ranging evaluation of the functionality of the foam products in fields such as energy storage, electrocatalysis, adsorption, etc. is discussed, revealing their distinctive strength originated from the foam structure. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future research priorities in this rapidly developing method.
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Affiliation(s)
- Zimo Pang
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
| | - Zhichao Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
| | - Jianyu Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
- CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Dongdong Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
| | - Guangyue Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
| | - Canshang Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
| | - Chengkai Du
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
| | - Weiwei Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Weihai 264209, P. R. China
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47
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Zhao Y, Mao J, Wu Z, Io WF, Pang SY, Zhao Y, Hao J. A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors. Nat Commun 2024; 15:6795. [PMID: 39122765 PMCID: PMC11315922 DOI: 10.1038/s41467-024-51140-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Accepted: 07/31/2024] [Indexed: 08/12/2024] Open
Abstract
Recently reported direct growth of highly crystalline centimetre-sized black phosphorus (BP) thin films on mica substrates by pulsed laser deposition (PLD) has attracted considerable research interest. However, an effective and general transfer method to incorporate them into (opto-)electronic devices is still missing. Here, we show a wet transfer method utilizing ethylene-vinyl acetate (EVA) and an ethylene glycol (EG) solution to transfer high-crystalline large-area PLD-BP films onto SiO2/Si substrates. The transferred films were used to fabricate BP-based bottom-gate field-effect transistor (FET) arrays exhibiting good uniformity and continuity, with carrier mobility and current switching ratios comparable to those obtained in as-grown BP films on mica substrates. Our work presents a promising transfer strategy for scalable integration of on-substrate grown 2D BP into devices with more complex structures and further investigation of material properties.
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Affiliation(s)
- Yuqian Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Jianfeng Mao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Sin-Yi Pang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Yifei Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China.
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48
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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49
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Jana D, Vaclavkova D, Mohelsky I, Kapuscinski P, Cho CW, Breslavetz I, Białek M, Ansermet JP, Piot BA, Orlita M, Faugeras C, Potemski M. Magnon gap excitations in van der Waals antiferromagnet MnPSe 3. Sci Rep 2024; 14:17502. [PMID: 39080382 PMCID: PMC11289482 DOI: 10.1038/s41598-024-67356-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 07/10/2024] [Indexed: 08/02/2024] Open
Abstract
Magneto-spectroscopy methods have been employed to study the zero-wavevector magnon excitations in MnPSe3. Experiments carried out as a function of temperature and the applied magnetic field show that two low-energy magnon branches of MnPSe3 in its antiferromagnetic phase are gapped. The observation of two low-energy magnon gaps (at 1.70 ± 0.05 meV and 0.09 ± 0.01 meV) implies that MnPSe3 is a biaxial antiferromagnet. A relatively strong out-of-plane anisotropy imposes the spin alignment to be in-plane whereas the spin directionality within the plane is governed by a factor of 2.5 × 10-3 weaker in-plane anisotropy.
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Affiliation(s)
- Dipankar Jana
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - D Vaclavkova
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
| | - I Mohelsky
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
| | - P Kapuscinski
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - C W Cho
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
- Department of Physics, Chungnam National University, Daejeon, 341134, Republic of Korea
| | - I Breslavetz
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
| | - M Białek
- CENTERA Labs, Institute of High Pressure Physics, PAS; CEZAMAT, Warsaw University of Technology, Warsaw, Poland
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - J-Ph Ansermet
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - B A Piot
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
| | - M Orlita
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
- Institute of Physics, Charles University, 121 16, Prague, Czech Republic
| | - C Faugeras
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France
| | - M Potemski
- Laboratoire National des Champs Magnétiques Intenses, LNCMI-EMFL, CNRS UPR3228, INSA-T, Univ. Grenoble Alpes, Univ. Toulouse, Univ. Toulouse 3, Grenoble and Toulouse, France.
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland.
- CENTERA Labs, Institute of High Pressure Physics, PAS; CEZAMAT, Warsaw University of Technology, Warsaw, Poland.
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50
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B. P. Querne M, C. Dias A, Janotti A, Da Silva JLF, Lima MP. Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:12164-12177. [PMID: 39081561 PMCID: PMC11284856 DOI: 10.1021/acs.jpcc.4c01813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 06/22/2024] [Accepted: 06/24/2024] [Indexed: 08/02/2024]
Abstract
Two-dimensional (2D) Janus structures offer a unique range of properties as a result of their symmetry breaking, resulting from the distinct chemical composition on each side of the monolayers. Here, we report a theoretical investigation of 2D Janus Q'A'AQ P3m1 monochalcogenides from group IV (A and A' = Ge and Sn; Q, Q' = S and Se) and 2D non-Janus QAAQ P3̅m1 counterparts. Our theoretical framework is based on density functional theory calculations combined with maximally localized Wannier functions and tight-binding parametrization to evaluate the excitonic properties. The phonon band structures exhibit exclusively real (nonimaginary) branches for all materials. Particularly, SeGeSnS has greater energetic stability than its non-Janus counterparts, representing an outstanding energetic stability among the investigated materials. However, SGeSnS and SGeSnSe have higher formation energies than the already synthesized MoSSe, making them more challenging to grow than the other investigated structures. The electronic structure analysis demonstrates that materials with Janus structures exhibit band gaps wider than those of their non-Janus counterparts, with the absolute value of the band gap predominantly determined by the core rather than the surface composition. Moreover, exciton binding energies range from 0.20 to 0.37 eV, reducing band gap values in the range of 21% to 32%. Thus, excitonic effects influence the optoelectronic properties more than the point-inversion symmetry breaking inherent in the Janus structures; however, both features are necessary to enhance the interaction between the materials and sunlight. We also found anisotropic behavior of the absorption coefficient, which was attributed to the inherent structural asymmetry of the Janus materials.
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Affiliation(s)
- Mateus B. P. Querne
- Department
of Physics, Federal University of São
Carlos, 13565-905, São Carlos, São Paulo, Brazil
| | - Alexandre C. Dias
- University
of Brasília, Institute of Physics
and International Center of Physics, Brasília 70919-970, DF, Brazil
| | - Anderson Janotti
- Department
of Materials Science and Engineering, University
of Delaware, Newark, Delaware 19716, United States
| | - Juarez L. F. Da Silva
- São
Carlos Institute of Chemistry, University
of São Paulo, P.O. Box 780, 13560-970, São Carlos, São Paulo, Brazil
| | - Matheus P. Lima
- Department
of Physics, Federal University of São
Carlos, 13565-905, São Carlos, São Paulo, Brazil
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