Recent Advances in Two-Dimensional Materials beyond Graphene

Effects of size and shape of hole defects on mechanical properties of biphenylene: a molecular dynamics study

The distinctive multi-ring structure and remarkable electrical characteristics of biphenylene render it a material of considerable interest, notably for its prospective utilization as an anode material in lithium-ion batteries. However, understanding the mechanical traits of biphenylene is essential for its application, particularly due to the volumetric fluctuations resulting from lithium ion insertion and extraction during charging and discharging cycles. In this regard, this study investigates the performance of pristine biphenylene and materials embedded with various types of hole defects under uniaxial tension utilizing molecular dynamics simulations. Specifically, from the stress‒strain curves, we obtained key mechanical properties, including toughness, strength, Young's modulus and fracture strain. It was observed that various near-circular hole (including circular, square, hexagonal, and octagonal) defects result in remarkably similar properties. A more quantitative scaling analysis revealed that, in comparison with the exact shape of the defect, the area of the defect is more critical for determining the mechanical properties of biphenylene. Our finding might be beneficial to the defect engineering of two-dimensional materials.

Advancements in Surfactant Carriers for Enhanced Oil Recovery: Mechanisms, Challenges, and Opportunities

Enhanced oil recovery (EOR) techniques are crucial for maximizing the extraction of residual oil from mature reservoirs. This review explores the latest advancements in surfactant carriers for EOR, focusing on their mechanisms, challenges, and opportunities. We delve into the role of inorganic nanoparticles, carbon materials, polymers and polymeric surfactants, and supramolecular systems, highlighting their interactions with reservoir rocks and their potential to improve oil recovery rates. The discussion includes the formulation and behavior of nanofluids, the impact of surfactant adsorption on different rock types, and innovative approaches using environmentally friendly materials. Notably, the use of metal oxide nanoparticles, carbon nanotubes, graphene derivatives, and polymeric surfacants and the development of supramolecular complexes for managing surfacant delivery are examined. We address the need for further research to optimize these technologies and overcome current limitations, emphasizing the importance of sustainable and economically viable EOR methods. This review aims to provide a comprehensive understanding of the emerging trends and future directions in surfactant carriers for EOR.

Molecular donor-acceptor linked systems as models for examining their interactions in excited states

Molecular donor-acceptor (D-A) linked systems have attracted significant attention due to their potential to address D-A interactions in excited states. In these systems, it is crucial to understand the interplay between electrons and spin behaviors, atomic nucleus movements (including vibration, rotation, fluctuation, and transfer), and collective motion (electron-phonon coupling) over time. Through intentional manipulation of locally excited, charge-transfer excited, and charge-separated states, along with modulation of dynamic effects (enhancement or restraint), we expect to unlock the full potential of D-A systems for photofunctions in electronics, energy, healthcare, and functional materials. In this perspective, we present our recent examples of D-A linked systems and related ones that address the aforementioned issues as part of our "Dynamic Exciton" research project in Japan.

Tunable Ultrafast Charge Transfer across Homojunction Interface

Charge transfer at heterojunction interfaces is a fundamental process that plays a crucial role in modern electronic and photonic devices. The essence of such charge transfer lies in the band offset, making charge transfer uncommon in a homojunction. Recently, sliding ferroelectricity has been proposed and confirmed in two-dimensional van der Waals stacked materials such as bilayer boron nitride. During the sliding of these layers, the band alignment shifts, creating conditions for charge separation at the interface. We employ ab initio nonadiabatic molecular dynamics simulations to elucidate the excited state carrier dynamics in bilayer boron pnictides. We propose that, akin to ferroelectric polarization flipping, the precise modulation of the distribution of excited state carriers can also be reached by sliding. Our results demonstrate that sliding induces a reversal of the frontier orbital distribution on the upper and lower layers, facilitating a robust interlayer carrier transfer. Notably, the interlayer carrier transfer is more pronounced in boron phosphide than in boron nitride, attributed to strong electron scattering in momentum space in boron nitride. We propose this novel method to manipulate carrier distribution and dynamics in a homojunction exhibiting sliding ferroelectricity, in general, paving a new way for developing advanced electronic and photonic devices.

First-Principles Studies of the Electronic and Optical Properties of Two-Dimensional Arsenic-Phosphorus (2D As-P) Compounds

In this work, we propose the construction of a two-dimensional system based on the stable phases previously reported for the 2D arsenic and phosphorus compounds, with hexagonal and orthorhombic symmetries. Therefore, we have modeled one hexagonal and three possible orthorhombic structures. To ensure the dynamical stability, we performed phonon spectra calculations for each system. We found that all phases are dynamically stable. To ensure the thermodynamic and mechanical stabilities, we have calculated cohesive energies and elastic constants. Our results show that the criteria for the stabilities are all fulfilled. For these stable structures, we computed the electronic and optical properties from first-principles studies based on density functional theory. The computation of electronic band gaps was performed by using the GW approximation to overcome the underestimation of the results obtained from standard DFT approaches. To study the optical properties, we have computed the dielectric function imaginary part within the BSE approach, which takes into account the excitonic effects and allows us to calculate the exciton binding energies of each system. The study was complemented by the computation of the absorption coefficient. From our calculations, it can be established that the 2D As-P systems are good candidates for several technological applications.

Advances in Inorganic Foam Materials Fabricated Via Blowing Strategy: A Comprehensive Review

Two-dimensional (2D) materials with excellent properties and widespread applications have been explosively investigated. However, their conventional synthetic methods exhibit concerns of limited scalability, complex purification process, and incompetence of prohibiting their restacking. The blowing strategy, characterized by gas-template, low-cost, and high-efficiency, presents a valuable avenue for the synthesis of 2D-based foam materials and thereby addresses these constraints. Whereas, its comprehensive introduction has been rarely outlined so far. This review commences with a synopsis of the blowing strategy, elucidating its development history, the statics and kinetics of the blowing process, and the choice of precursor and foaming agents. Thereafter, we dwell at length on across-the-board foams enabled by the blowing route, like BxCyNz foams, carbon foams, and diverse composite foams consisting of carbon and metal compounds. Following that, a wide-ranging evaluation of the functionality of the foam products in fields such as energy storage, electrocatalysis, adsorption, etc. is discussed, revealing their distinctive strength originated from the foam structure. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future research priorities in this rapidly developing method.

A clean transfer approach to prepare centimetre-scale black phosphorus crystalline multilayers on silicon substrates for field-effect transistors

Recently reported direct growth of highly crystalline centimetre-sized black phosphorus (BP) thin films on mica substrates by pulsed laser deposition (PLD) has attracted considerable research interest. However, an effective and general transfer method to incorporate them into (opto-)electronic devices is still missing. Here, we show a wet transfer method utilizing ethylene-vinyl acetate (EVA) and an ethylene glycol (EG) solution to transfer high-crystalline large-area PLD-BP films onto SiO2/Si substrates. The transferred films were used to fabricate BP-based bottom-gate field-effect transistor (FET) arrays exhibiting good uniformity and continuity, with carrier mobility and current switching ratios comparable to those obtained in as-grown BP films on mica substrates. Our work presents a promising transfer strategy for scalable integration of on-substrate grown 2D BP into devices with more complex structures and further investigation of material properties.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Magnon gap excitations in van der Waals antiferromagnet MnPSe3

Magneto-spectroscopy methods have been employed to study the zero-wavevector magnon excitations in MnPSe3. Experiments carried out as a function of temperature and the applied magnetic field show that two low-energy magnon branches of MnPSe3 in its antiferromagnetic phase are gapped. The observation of two low-energy magnon gaps (at 1.70 ± 0.05 meV and 0.09 ± 0.01 meV) implies that MnPSe3 is a biaxial antiferromagnet. A relatively strong out-of-plane anisotropy imposes the spin alignment to be in-plane whereas the spin directionality within the plane is governed by a factor of 2.5 × 10-3 weaker in-plane anisotropy.

Dias A, Janotti A, Da Silva JLF, Lima MP. Tuning Excitonic Properties of Monochalcogenides via Design of Janus Structures

Two-dimensional (2D) Janus structures offer a unique range of properties as a result of their symmetry breaking, resulting from the distinct chemical composition on each side of the monolayers. Here, we report a theoretical investigation of 2D Janus Q'A'AQ P3m1 monochalcogenides from group IV (A and A' = Ge and Sn; Q, Q' = S and Se) and 2D non-Janus QAAQ P3̅m1 counterparts. Our theoretical framework is based on density functional theory calculations combined with maximally localized Wannier functions and tight-binding parametrization to evaluate the excitonic properties. The phonon band structures exhibit exclusively real (nonimaginary) branches for all materials. Particularly, SeGeSnS has greater energetic stability than its non-Janus counterparts, representing an outstanding energetic stability among the investigated materials. However, SGeSnS and SGeSnSe have higher formation energies than the already synthesized MoSSe, making them more challenging to grow than the other investigated structures. The electronic structure analysis demonstrates that materials with Janus structures exhibit band gaps wider than those of their non-Janus counterparts, with the absolute value of the band gap predominantly determined by the core rather than the surface composition. Moreover, exciton binding energies range from 0.20 to 0.37 eV, reducing band gap values in the range of 21% to 32%. Thus, excitonic effects influence the optoelectronic properties more than the point-inversion symmetry breaking inherent in the Janus structures; however, both features are necessary to enhance the interaction between the materials and sunlight. We also found anisotropic behavior of the absorption coefficient, which was attributed to the inherent structural asymmetry of the Janus materials.

Evolution of transition metal dichalcogenide film properties during chemical vapor deposition: from monolayer islands to nanowalls

Unique properties possessed by transition metal dichalcogenides (TMDs) attract much attention in terms of investigation of their formation and dependence of their characteristics on the production process parameters. Here, we investigate the formation of TMD films during chemical vapor deposition (CVD) in a mixture of thermally activated gaseous H2S and vaporized transition metals. Our observations of changes in morphology, Raman spectra, and photoluminescence (PL) properties in combination within situmeasurements of the electrical conductivity of the deposits formed at various precursor concentrations and CVD durations are evidence of existence of particular stages in the TMD material formation. Gradual transformation of PL spectra from trion to exciton type is detected for different stages of the material formation. The obtained results and proposed methods provide tailoring of TMD film characteristics necessary for particular applications like photodetectors, photocatalysts, and gas sensors.

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures

The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.

Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review

Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

Strain-free MoS2/ZrGe2N4 van der Waals Heterostructure: Tunable Electronic Properties with Type-II Band Alignment

Vertically stacked van der Waals heterostructures (vdW-HS) amplify the scope of 2D materials for emerging technological applications, such as nanodevices and solar cells. Here, we present a first-principles study on the formation energy and electronic properties of the heterobilayer (HBL) MoS2/ZrGe2N4, which forms a strain-free vdW-HS thanks to the identical lattice parameters of its constituents. This system has an indirect band gap with type-II band alignment, with the highest occupied and lowest unoccupied states localized on MoS2 and ZrGe2N4, respectively. Biaxial strain, which generally reduces the band gap regardless of compression or expansion, is applied to tune the electronic properties of the HBL. A small amount of tensile strain (>1%) leads to an indirect-to-direct transition, thereby shifting the band edges at the center of the Brillouin zone and leading to optical absorption in the visible region. These results suggest the potential application of HBL MoS2/ZrGe2N4 in optoelectronic devices.

Aqueous Graphene Dispersion and Biofunctionalization via Enzymatic Oxidation of Tripeptides

Graphene, a 2D carbon material, possesses extraordinary mechanical, electrical, and thermal properties, making it highly attractive for various biological applications such as biosensing, biotherapeutics, and tissue engineering. However, the tendency of graphene sheets to aggregate and restack hinders its dispersion in water, limiting these applications. Peptides, with their defined amino acid sequences and versatile functionalities, are compelling molecules with which to modify graphene-aromatic amino acids can strengthen interactions through π-stacking and charged groups can be chosen to make the sheets dispersible and stable in water. Here, a facile and green method for covalently functionalizing and dispersing graphene using amphiphilic tripeptides, facilitated by a tyrosine phenol side chain, through an aqueous enzymatic oxidation process is demonstrated. The presence of a second aromatic side chain group enhances this interaction through non-covalent support via π-π stacking with the graphene surface. Futhermore, the addition of charged moieties originating from either ionizable amino acids or terminal groups facilitates profound interactions with water, resulting in the dispersion of the newly functionalized graphene in aqueous solutions. This biofunctionalization method resulted in ≈56% peptide loading on the graphene surface, leading to graphene dispersions that remain stable for months in aqueous solutions outperforming currently used surfactants.

Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes

A methodology to use laser printing, a form of electrophotography, to print metal chalcogenide complexes on paper, is described. After fusing the toner to paper, a heating step is used to cause the printed metal xanthate complexes to thermolyze within the toner and form three target metal chalcogenides: CuS, SnS, and ZnS. To achieve this, we synthesize a poly(styrene-co-n-butyl acrylate) thermopolymer that emulates the thermal properties of a commercial toner and is also solution processable with the metal xanthate complexes used: [Zn(S2COEt)2], [Cu(S2COEt)·(PPh3)2], and [Sn(S2COEt)2]. We demonstrate through energy dispersive X-ray mapping that the toner is deposited following printing and that thermolysis of the metal xanthate complexes occurs in the fused toner, demonstrating the first example of laser printing of inorganic complexes and, in turn, semiconductors.

Layer-by-layer thinning of two-dimensional materials

Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.

From Bulk Molybdenum Disulfide (MoS2) to Suspensions of Exfoliated MoS2 in an Aqueous Medium and Their Applications

Two-dimensional (2D) layered materials like graphene, transition-metal dichalcogenides (TMDs), boron nitrides, etc., exhibit unique and fascinating properties, such as high surface-to-volume ratio, inherent mechanical flexibility and robustness, tunable bandgap, and high carrier mobility, which makes them an apt candidate for flexible electronics with low consumption of power. Because of these properties, they are in tremendous demand for advancement in energy, environmental, and biomedical sectors developed through various technologies. The production and scalability of these materials must be sustainable and ecofriendly to utilize these unique properties in the real world. Here, in this current review, we review molybdenum disulfide (MoS2 nanosheets) in detail, focusing on exfoliated MoS2 in water and the applicability of aqueous MoS2 suspensions in various fields. The exfoliation of MoS2 results in the formation of single or few-layered MoS2. Therefore, this Review focuses on the few layers of exfoliated MoS2 that have the additional properties of 2D layered materials and higher excellent compatibility for integration than existing conventional Si tools. Hence, a few layers of exfoliated MoS2 are widely explored in biosensing, gas sensing, catalysis, photodetectors, energy storage devices, a light-emitting diode (LED), adsorption, etc. This review covers the numerous methodologies to exfoliate MoS2, focusing on the various published methodologies to obtain nanosheets of MoS2 from water solutions and their use.

Functionalization and Structural Evolution of Conducting Quasi-One-Dimensional Chevrel-Type Telluride Nanocrystals

Interfacing organic molecular groups with well-defined inorganic lattices, especially in low dimensions, enables synthetic routes for the rational manipulation of both their local or extended lattice structures and physical properties. While appreciably studied in two-dimensional systems, the influence of surface organic substituents on many known and emergent one-dimensional (1D) and quasi-1D (q-1D) crystals has remained underexplored. Herein, we demonstrate the surface functionalization of bulk and nanoscale Chevrel-like q-1D ionic crystals using In2Mo6Te6, a predicted q-1D Dirac semimetal, as the model phase. Using a series of alkyl ammonium (-NR4+; R = H, methyl, ethyl, butyl, and octyl) substituents with varying chain lengths, we demonstrate the systematic expansion of the intrachain c-axis direction and the contraction of the interchain a/b-axis direction with longer chain substituents. Additionally, we demonstrate the systematic expansion of the intrachain c-axis direction and the contraction of the interchain a/b-axis direction as the alkyl chain substituents become longer using a combination of powder X-ray diffraction and Raman experiments. Beyond the structural modulation that the substituted groups can impose on the lattice, we also found that the substitution of ammonium-based groups on the surface of the nanocrystals resulted in selective suspension in aqueous (NH4+-functionalized) or organic solvents (NOc4+-functionalized), imparted fluorescent character (Rhodamine B-functionalized), and modulated the electrical conductivity of the nanocrystal ensemble. Altogether, our results underscore the potential of organic-inorganic interfacing strategies to tune the structural and physical properties of rediscovered Chevrel-type q-1D ionic solids and open opportunities for the development of surface-addressable building blocks for hybrid electronic and optoelectronic devices at the nanoscale.

An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal-Semiconductor Heterojunctions

We propose an atomically resolved approach to capture the spatial variations of the Schottky barrier height (SBH) at metal-semiconductor heterojunctions. This proposed scheme, based on atom-specific partial density of states (PDOS) calculations, further enables calculation of the effective SBH that aligns with conductance measurements. We apply this approach to study the variations of SBH at MoS2@Au heterojunctions, in which MoS2 contains conducting and semiconducting grain boundaries (GBs). Our results reveal that there are significant variations in SBH at atoms in the defected heterojunctions. Of particular interest is the fact that the SBH in some areas with extended defects approaches zero, indicating Ohmic contact. One important implication of this finding is that the effective SBH should be intrinsically dependent on the defect density and character. Remarkably, the obtained effective SBH values demonstrate good agreement with existing experimental measurements. Thus, the present study addresses two long-standing challenges associated with SBH in MoS2-metal heterojunctions: the wide variation in experimentally measured SBH values at MoS2@metal heterojunctions and the large discrepancy between density-functional-theory-predicted and experimentally measured SBH values. Our proposed approach points out a valuable pathway for understanding and manipulating SBHs at metal-semiconductor heterojunctions.

Molecular dynamics simulation-based study to analyse the properties of entrapped water between gold and graphene 2D interfaces

Heterostructures based on graphene and other 2D materials have received significant attention in recent years. However, it is challenging to fabricate them with an ultra-clean interface due to unwanted foreign molecules, which usually get introduced during their transfer to a desired substrate. Clean nanofabrication is critical for the utilization of these materials in 2D nanoelectronics devices and circuits, and therefore, it is important to understand the influence of the "non-ideal" interface. Inspired by the wet-transfer process of the CVD-grown graphene, herein, we present an atomistic simulation of the graphene-Au interface, where water molecules often get trapped during the transfer process. By using molecular dynamics (MD) simulations, we investigated the structural variations of the trapped water and the traction-separation curve derived from the graphene-Au interface at 300 K. We observed the formation of an ice-like structure with square-ice patterns when the thickness of the water film was <5 Å. This could cause undesirable strain in the graphene layer and hence affect the performance of devices developed from it. We also observed that at higher thicknesses the water film is predominantly present in the liquid state. The traction separation curve showed that the adhesion of graphene is better in the presence of an ice-like structure. This study explains the behaviour of water confined at the nanoscale region and advances our understanding of the graphene-Au interface in 2D nanoelectronics devices and circuits.

Catalytic synergy of WS2-anchored PdSe2 for highly sensitive hydrogen gas sensor

Hydrogen (H2) is widely used in industrial processes and is one of the well-known choices for storage of renewable energy. H2 detection has become crucial for safety in manufacturing, storage, and transportation due to its strong explosivity. To overcome the issue of explosion, there is a need for highly selective and sensitive H2 sensors that can function at low temperatures. In this research, we have adequately fabricated an unreported van der Waals (vdWs) PdSe2/WS2 heterostructure, which exhibits exceptional properties as a H2 sensor. The formation of these heterostructure devices involves the direct selenization process using chemical vapor deposition (CVD) of Pd films that have been deposited on the substrate of SiO2/Si by DC sputtering, followed by drop casting of WS2 nanoparticles prepared by a hydrothermal method onto device substrates including pre-patterned electrodes. The confirmation of the heterostructure has been done through the utilization of powder X-ray diffraction (XRD), depth-dependent X-ray photoelectron spectroscopy (XPS) and field-emission scanning electron microscopy (FE-SEM) techniques. Also, the average roughness of thin films is decided by Atomic Force Microscopy (AFM). The comprehensive research shows that the PdSe2/WS2 heterostructure-based sensor produces a response that is equivalent to 67.4% towards 50 ppm H2 at 100 °C. The response could be a result of the heterostructure effect and the superior selectivity for H2 gas in contrast to other gases, including NO2, CH4, CO and CO2, suggesting tremendous potential for H2 detection. Significantly, the sensor exhibits fast response and a recovery time of 31.5 s and 136.6 s, respectively. Moreover, the explanation of the improvement in gas sensitivity was suggested by exploiting the energy band positioning of the PdSe2/WS2 heterostructure, along with a detailed study of variations in the surface potential. This study has the potential to provide a road map for the advancement of gas sensors utilizing two-dimensional (2D) vdWs heterostructures, which exhibit superior performance at low temperatures.

Electronic and Molecular Adsorption Properties of Pt-Doped BC6N: An Ab-Initio Investigation

In the last two decades, significant efforts have been particularly invested in two-dimensional (2D) hexagonal boron carbon nitride h-BxCyNz because of its unique physical and chemical characteristics. The presence of the carbon atoms lowers the large gap of its cousin structure, boron nitride (BN), making it more suitable for various applications. Here, we use density functional theory to study the structural, electronic, and magnetic properties of Pt-doped BC6N (Pt-BC6N, as well as its adsorption potential of small molecular gases (NO, NO2, CO2, NH3). We consider all distinct locations of the Pt atom in the supercell (B, N, and two C sites). Different adsorption locations are also considered for the pristine and Pt-doped systems. The formation energies of all Pt-doped structures are close to those of the pristine system, reflecting their stability. The pristine BC6N is semiconducting, so doping with Pt at the B and N sites gives a diluted magnetic semiconductor while doping at the C1 and C2 sites results in a smaller gap semiconductor. We find that all doped structures exhibit direct band gaps. The studied molecules are very weakly physisorbed on the pristine structure. Pt doping leads to much stronger interactions, where NO, NO2, and NH3 chemisorb on the doped systems, and CO2 physiorb, illustrating the doped systems' potential for gas purification applications. We also find that the adsorption changes the electronic and magnetic properties of the doped systems, inviting their consideration for spintronics and gas sensing.

Unconventional Surface Doping Effect on the Spin State of an Adsorbed Magnetic Molecule

Magnetic molecules adsorbed on two-dimensional (2D) substrates have attracted broad attention because of their potential applications in quantum device applications. Experimental observations have demonstrated substantial alteration in the spin excitation energy of iron phthalocyanine (FePc) molecules when adsorbed on nitrogen-doped graphene substrates. However, the underlying mechanism responsible for this notable change remains unclear. To shed light on this, we employ an embedding method and ab initio quantum chemistry calculations to investigate the effects of surface doping on molecular properties. Our study unveils an unconventional chemical bonding at the interface between the FePc molecule and the N-doped graphene. This bonding interaction, stronger than non-covalent interactions, significantly modifies the magnetic anisotropy energy of the adsorbed molecule, consistent with experimental observations. These findings provide valuable insights into the electronic and magnetic properties of molecules on 2D substrates, offering a promising pathway for precise manipulation of molecular spin states.

First-principles study of the oxidation susceptibility of WS2, WSe2, and WTe2 monolayers

The environmental stability of two-dimensional (2D) transition metal dichalcogenide monolayers is of great importance for their applications in electronic, photonic, and energy storage devices. In this study, we focus on understanding the susceptibility of WS2, WSe2, and WTe2 monolayers to oxygen exposure in the form of atomic oxygen and O2 and O3 molecules, respectively. Calculations based on the van der Waals-corrected density functional theory predicted that O2 and O3 molecules are weakly adsorbed on these monolayers, although atomic oxygen prefers chemisorption accompanied by a significant charge transfer from the surface to oxygen. In the physisorbed molecular configurations consisting of O2 and O3, the partially oxidized monolayers retain their geometrical and electronic structures. The calculated transition path as the oxygen approaches the surface shows a high-energy barrier for all cases, thus explaining the photo-induced formation of the oxidized configurations in the experiments. Furthermore, oxidizing the WS2 monolayer is predicted to modify its electronic structure, reducing the band gap with increasing oxygen coverage on the surface. Overall, the calculated results predict the resilience of WS2, WSe2, and WTe2 monolayers against oxygen exposure, thus ensuring stability for devices fabricated with these monolayers.

Charge Transport and Ion Kinetics in 1D TiS2 Structures are Dependent on the Introduction of Selenium Extrinsic Atoms

Improving charge insertion into intercalation hosts is essential for crucial energy and memory technologies. The layered material TiS2 provides a promising template for study, but further development of this compound demands improvement to its ion kinetics. Here, we report the incorporation of Se atoms into TiS2 nanobelts to address barriers related to sluggish ion motion in the material. TiS1.8Se0.2 nanobelts are synthesized through a solid-state method, and structural and electrochemical characterizations reveal that solid solutions based on TiS1.8Se0.2 nanobelts display increased interlayer spacing and electrical conductivity compared to pure TiS2 nanobelts. Cyclic voltammetry and electrochemical impedance spectroscopy indicate that the capacitive behavior of the TiS2 electrode is improved upon Se incorporation, particularly at low depths of discharge in the materials. The presence of Se in the structure can be directly related to an increased pseudocapacitive contribution to electrode behavior at a low Li+ content in the material and thus to improved ion kinetics in the TiS1.8Se0.2 nanobelts.

Air-Stable, Large-Area 2D Metals and Semiconductors

Two-dimensional (2D) materials are popular for fundamental physics study and technological applications in next-generation electronics, spintronics, and optoelectronic devices due to a wide range of intriguing physical and chemical properties. Recently, the family of 2D metals and 2D semiconductors has been expanding rapidly because they offer properties once unknown to us. One of the challenges to fully access their properties is poor stability in ambient conditions. In the first half of this Review, we briefly summarize common methods of preparing 2D metals and highlight some recent approaches for making air-stable 2D metals. Additionally, we introduce the physicochemical properties of some air-stable 2D metals recently explored. The second half discusses the air stability and oxidation mechanisms of 2D transition metal dichalcogenides and some elemental 2D semiconductors. Their air stability can be enhanced by optimizing growth temperature, substrates, and precursors during 2D material growth to improve material quality, which will be discussed. Other methods, including doping, postgrowth annealing, and encapsulation of insulators that can suppress defects and isolate the encapsulated samples from the ambient environment, will be reviewed.

First-principles studies on the electronic and contact properties of monolayer Ga2STe-metal contacts

Monolayer (ML) Janus III-VI compounds have attracted the use of multiple competitive platforms for future-generation functional electronics, including non-volatile memories, field effect transistors, and sensors. In this work, the electronic and interfacial properties of ML Ga2STe-metal (Au, Ag, Cu, and Al) contacts are systematically investigated using first-principles calculations combined with the non-equilibrium Green's function method. The ML Ga2STe-Au/Ag/Al contacts exhibit weak electronic orbital hybridization at the interface, while the ML Ga2STe-Cu contact exhibits strong electronic orbital hybridization. The Te surface is more conducive to electron injection than the S surface in ML Ga2STe-metal contact. Quantum transport calculations revealed that when the Te side of the ML Ga2STe is in contact with Au, Ag and Cu electrodes, p-type Schottky contacts are formed. When in contact with the Al electrode, an n-type Schottky contact is formed with an electron SBH of 0.079 eV. When the S side of ML Ga2STe is in contact with Au and Al electrodes, p-type Schottky contacts are formed, and when it is in contact with Ag and Cu electrodes, n-type Schottky contacts are formed. Our study will guide the selection of appropriate metal electrodes for constructing ML Ga2STe devices.

Transient N-GQDs/PVA nanocomposite thin film for memristor application

In recent years quantum dot (QDs) based resistive switching devices(memristors) have gained a lot of attention. Here we report the resistive switching behavior of nitrogen-doped graphene quantum dots/Polyvinyl alcohol (N-GQDs/PVA) degradable nanocomposite thin film with different weight percentages (wt.%) of N-GQDs. The memristor device was fabricated by a simple spin coating technique. It was found that 1 wt% N-GQDs/PVA device shows a prominent resistive switching phenomenon with good cyclic stability, high on/off ratio of ~102and retention time of ∼104s. From a detailed experimental study of band structure, we conclude that memristive behavior originates from the space charge controlled conduction (SCLC) mechanism. Further transient property of built memristive device was studied. Within three minutes of being submerged in distilled water, the fabricated memory device was destroyed. This phenomenon facilitates the usage of fabricated memristor devices to develop memory devices for military and security purposes.

Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation

We present a spectroscopic investigation of the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, deduced by the combined analysis of Raman and photoluminescence spectra, revealed a significant variation in the dome's aspect ratio. The modification of the dome shape caused major changes in the mechanical properties of the system resulting in a sizable increase of the out-of-plane compressive strain while keeping the in-plane tensile strain unchanged. The variation of the strain gradients drives a nonlinear behavior in both the exciton energy and radiative recombination intensity, interpreted as the consequence of a hybridization mechanism between the electronic states of two distinct minima in the conduction band. Our results indicate that pressure and strain can be efficiently combined in low dimensional systems with unconventional morphology to obtain modulations of the electronic band structure not achievable in planar crystals.

Predicting two-dimensional semiconductors using conductivity effective mass

In this paper we investigate the relationship between the conductivity effective mass and exfoliation energy of materials to assess whether automatic sampling of the electron band structure can predict the presence of and ease of separating chemically bonded layers. We assess 22 976 materials from the Materials Project database, screen for only those that are thermodynamically stable and identify the 1000 materials with the highest standard deviation for p-type and the 1000 materials with the highest standard deviation for n-type internal conductivity effective mass tensors. We calculate the exfoliation energy of these 2000 materials and report on the correlation between effective mass and exfoliation energy. A relationship is found which is used to identify a previously unconsidered two-dimensional material and could streamline the modelling of other two-dimensional materials in the future.

Ecotoxicological Properties of Pure and Phosphorus-Containing Graphene Oxide Bidimensional Sheets in Daphnia magna

In this work, the synthesis and structural, thermal, vibrational, morphological, and electronic characterization of 2D-like pure graphene oxide (GO) and phosphorus-containing graphene oxide (GOP) sheets were investigated. The average thicknesses of GO and GOP were 0.8 μm and 3.1 μm, respectively. The electron energy-loss spectroscopy spectra were used to analyze the differences in the C-K and O-K energy edge bands between GO and GOP. In addition, colloidal stability was studied using dynamic light scattering and zeta potential physicochemical techniques, determining that as the concentration increases, the hydrodynamic diameter and electrostatic stability of GO and GOP increase. The colloidal stability was quite important to ensure the interaction between the suspended solid phase and the biomarker. The 2D-like materials were used to determine their ecotoxicological properties, such as the medium lethal concentration, a crucial parameter for understanding ecotoxicity. Acute ecotoxicity experiments (24 h) were conducted in triplicate to obtain robust statistics, with corresponding mean lethal concentration (LC50) of 11.4 mg L-1 and 9.8 mg L-1 for GO and GOP, respectively. The morphological parameters of GO and GOP were compared with a negative control. However, only the case of GO was analyzed, since the Daphnia magna (D. magna) set exposed to GOP died before completing the time required for morphological analysis. The results indicate that the GOP sample is more toxic than the GO, both during and after exposure. Furthermore, the morphological parameters with the greatest statistically significant changes (p<0.05) were associated with the heart and body, while the eye and tail showed less significant changes.

Aerosol-Assisted Chemical Vapor Deposition of 2H-WS2 From Single-Source Tungsten Dithiolene Precursors

The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)4(dmdt), W(CO)2(dmdt)2, and W(dmdt)3 were evaluated as potential single-source precursors for the chemical vapor deposition of WS2. The results of TGA-MS, DIP-MS, and pyrolysis with NMR analysis were consistent with a thermal decomposition pathway in which loss of 2-butyne through a retro[3+2]cycloaddition of the dithiolene ligand generated terminal sulfido ligands. Aerosol-assisted chemical vapor deposition onto silicon substrates was performed using all three complexes, yielding 2H-WS2 thin films as characterized by Raman spectroscopy and GI-XRD. Film morphology and elemental composition of the films were determined using SEM, EDS, and XPS. Four-point probe measurements afforded a film resistivity of 8.37 Ωcm for a sample deposited from W(dmdt)3 in toluene at 600 °C.

Programming Interfacial Porosity and Symmetry with Escherized Colloids

We simultaneously designed the porosity and plane symmetry of self-assembling colloidal films by using isohedral tiles to determine the location and shape of enthalpically interacting surface patches on motifs being functionalized. The symmetries of both the tile and motif determine the plane symmetry group of the final assembly. Previous work has either ignored symmetry considerations altogether or accounted for only the tile's properties, applicable only when the motif is asymmetric; this approach provides a complete account and enables the design of symmetric colloids using this tile-based approach, which are often more practical to manufacture. We present the methodology, based on the type of the tile, and provide computational tools that enable the automatic classification of all tiles for a given motif and the optimization of the tile to fit the motif, sometimes referred to as "Escherization".

The Influence of a Microstructural Conformation of Oriented Floating Films of Semiconducting Polymers on Organic Device Performance

Extended π-conjugation with backbone-planarity-driven π-π stacking dominates charge transport in semiconducting polymers (SCPs). The roles of SCP film morphology and macromolecular conformation concerning the substrate in influencing charge transport and its impact on device performance have been a subject of extensive debate. Face-on SCPs promote out-of-plane charge transport primarily through π-π stacking, with conjugated polymeric chains assisting transport in connecting crystalline domains, whereas edge-on SCPs promote in-plane charge transport primarily through conjugation and π-π stacking. In this work, we fabricated three different types of devices, namely, organic field effect transistors, organic Schottky diodes, and organic bistable memristors, as representatives of planar and vertical devices. We demonstrate that a planar device, i.e., an organic field effect transistor, performs well in an edge-on conformation exhibiting a field-effect mobility of 0.12 cm2V-1s-1 and on/off ratio >104, whereas vertical devices, i.e., organic Schottky diodes and organic memristors, perform well in a face-on conformation, exhibiting exceptionally high on/off ratios of ~107 and 106, respectively.

Atomistic Probing of Defect-Engineered 2H-MoTe2 Monolayers

Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe2 monolayers that are tactically exposed to (i) 200 °C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe2 samples; but interestingly, 200 °C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe2, respectively. While 200 °C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.

Area-Controlled Soft Contact Probe: Non-Destructive Robust Electrical Contact with 2D and Fragile Materials

We developed a soft contact probe capable of making electrical contact with a specimen without causing damage. This probe is now commercially available. However, the contact area with the probe changes according to the pressure applied during electric contact, potentially affecting electric measurements when current density or electric field strength is critical. To address this, we developed methods to control the area of electric contact. This article reports on these methods, as well as variations in probe size, pressure for electric contact, probe materials, and attachment to commercial probers.

Porous materials as effective chemiresistive gas sensors

Chemiresistive gas sensors (CGSs) have revolutionized the field of gas sensing by providing a low-power, low-cost, and highly sensitive means of detecting harmful gases. This technology works by measuring changes in the conductivity of materials when they interact with a testing gas. While semiconducting metal oxides and two-dimensional (2D) materials have been used for CGSs, they suffer from poor selectivity to specific analytes in the presence of interfering gases and require high operating temperatures, resulting in high signal-to-noise ratios. However, nanoporous materials have emerged as a promising alternative for CGSs due to their high specific surface area, unsaturated metal actives, and density of three-dimensional inter-connected conductive and pendant functional groups. Porous materials have demonstrated excellent response and recovery times, remarkable selectivity, and the ability to detect gases at extremely low concentrations. Herein, our central emphasis is on all aspects of CGSs, with a primary focus on the use of porous materials. Further, we discuss the basic sensing mechanisms and parameters, different types of popular sensing materials, and the critical explanations of various mechanisms involved throughout the sensing process. We have provided examples of remarkable performance demonstrated by sensors using these materials. In addition to this, we compare the performance of porous materials with traditional metal-oxide semiconductors (MOSs) and 2D materials. Finally, we discussed future aspects, shortcomings, and scope for improvement in sensing performance, including the use of metal-organic frameworks (MOFs), covalent-organic frameworks (COFs), and porous organic polymers (POPs), as well as their hybrid counterparts. Overall, CGSs using porous materials have the potential to address a wide range of applications, including monitoring water quality, detecting harmful chemicals, improving surveillance, preventing natural disasters, and improving healthcare.

Synthesis and characterization of MoS2-COOH/gly/Mn nanocomposite as an efficient adsorbent for Ultra-trace determination of trifluralin herbicide

The world is confronting a severe water crisis. To clean up water from heavy metals, microorganisms, chemicals, and other types of pollutants, nanocomposites have been receiving great attention specifically due to the high surface area affording to work effectually even at low concentrations. In this research, we synthesized a new amino acid-modified MoS2 nanocomposite by chemically immobilizing Mn (II). The synthesized absorbent MoS2-COOH/gly/Mn was identified by thermogravimetric analysis (TGA), nitrogen adsorption measurement, X-ray diffraction (XRD), analysis of energy dispersive X-ray mapping (EDAX and MAP), field emission scanning electron microscopy (FE-SEM), and Fourier Transform Infrared spectrometry (FT-IR). The nanocomposite was employed as an adsorbent through the solid phase microextraction (SPME) method while trifluralin herbicide was chosen as a model compound. For the monitoring of trifluralin molecules, we employed an ion mobility spectrometry apparatus featuring a corona discharge ionization source. The SPME method's effectiveness was examined by investigating the stirring rate and extraction time as two crucial parameters, aiming to achieve trace analysis of trifluralin. Under the optimized condition of the trifluralin extraction, the coefficient (R2) and linear dynamic range (LDR) correlation were obtained at 0.9961 and 0.5-10 μg L-1, respectively. Relative recovery values the described approach were obtained in the span of 96-97% for agricultural wastewater samples. The quantification (LOQ) and limit of detection (LOD) were calculated at 0.5 and 0.15 μg L-1, respectively. The proposed nanocomposite absorbent has the capability to be applied as an efficient material for the extraction of trifluralin herbicide from different solutions.

Environmental and Health Impacts of Graphene and Other Two-Dimensional Materials: A Graphene Flagship Perspective

Two-dimensional (2D) materials have attracted tremendous interest ever since the isolation of atomically thin sheets of graphene in 2004 due to the specific and versatile properties of these materials. However, the increasing production and use of 2D materials necessitate a thorough evaluation of the potential impact on human health and the environment. Furthermore, harmonized test protocols are needed with which to assess the safety of 2D materials. The Graphene Flagship project (2013-2023), funded by the European Commission, addressed the identification of the possible hazard of graphene-based materials as well as emerging 2D materials including transition metal dichalcogenides, hexagonal boron nitride, and others. Additionally, so-called green chemistry approaches were explored to achieve the goal of a safe and sustainable production and use of this fascinating family of nanomaterials. The present review provides a compact survey of the findings and the lessons learned in the Graphene Flagship.

Hydrogenation driven ultra-low lattice thermal conductivity inβ12borophene

Borophene gathered large interest owing to its polymorphism and intriguing properties such as Dirac point, inherent metallicity, etc but oxidation limits its capabilities. Hydrogenated borophene was recently synthesised experimentally to harness its applications. Motivated by experimental work, in this paper, using first-principles calculations and Boltzmann transport theory, we study the freestandingβ12borophene nanosheet doped and functionalised with hydrogen (H), lithium (Li), beryllium (Be), and carbon (C) atoms at differentβ12lattice sites. Among all possible configurations, we screen two stable candidates, pristine and hydrogenatedβ12borophene nanosheets. Both nanosheets possess dynamic and mechanical stability while the hydrogenated sheet has different anisotropic metallicity compared to pristine sheet leading to enhancement in brittle behaviour. Electronic structure calculations reveal that both nanosheets host Dirac cones (DCs), while hydrogenation leads to shift and enhancement in tilt of the DCs. Further hydrogenation leads to the appearance of additional Fermi pockets in the Fermi surface. Transport calculations reveals that the lattice thermal conductivity changes from 12.51 to 0.22 W m-1 K-1(along armchair direction) and from 4.42 to 0.07 W m-1 K-1(along zigzag direction) upon hydrogenation at room temperature (300 K), demonstrating a large reduction by two orders of magnitude. Such reduction is mainly attributed to decreased phonon mean free path and relaxation time along with the enhanced phonon scattering rates stemming from high frequency phonon flat modes in hydrogenated nanosheet. Comparatively larger weighted phase space leads to increased anharmonic scattering in hydrogenated nanosheet contributing to ultra-low lattice thermal conductivity. Consequently, hydrogenatedβ12nanosheet exhibits a comparatively higher thermoelectric figure of merit (∼0.75) at room temperature along armchair direction. Our study demonstrates the effects of functionalisation on transport properties of freestandingβ12borophene nanosheets which can be utilised to enhance the thermoelectric performance in two-dimensional (2D) systems and expand the applications of boron-based 2D materials.

Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Silicene, a single layer of Si atoms, shares many remarkable electronic properties with graphene. So far, silicene has been synthesized in its epitaxial form on a few surfaces of solids. Thus, the problem of silicene-substrate interaction appears, which usually depresses the original electronic behavior but may trigger properties superior to those of bare components. We report the direct observation of robust Dirac-dispersed bands in epitaxial silicene grown on Au(111) films deposited on Si(111). By performing in-depth angle-resolved photoemission spectroscopy measurements, we reveal three pairs of one-dimensional bands with linear dispersion running in three different directions of an otherwise two-dimensional system. By combining these results with first-principles calculations, we explore the nature of these bands and point to strong interaction between subsystems forming a complex Si-Au heterostructure. These findings emphasize the essential role of interfacial coupling and open a unique materials platform for exploring exotic quantum phenomena and applications in future-generation nanoelectronics.

Probing the Interaction between Individual Metal Nanocrystals and Two-Dimensional Metal Oxides via Electron Energy Loss Spectroscopy

Metal nanoparticles can photosensitize two-dimensional metal oxides, facilitating their electrical connection to devices and enhancing their abilities in catalysis and sensing. In this study, we investigated how individual silver nanoparticles interact with two-dimensional tin oxide and antimony-doped indium oxide using electron energy loss spectroscopy (EELS). The measurement of the spectral line width of the longitudinal plasmon resonance of the nanoparticles in absence and presence of 2D materials allowed us to quantify the contribution of chemical interface damping to the line width. Our analysis reveals that a stronger interaction (damping) occurs with 2D antimony-doped indium oxide due to its highly homogeneous surface. The results of this study offer new insight into the interaction between metal nanoparticles and 2D materials.

The anisotropic transport properties of the three-terminal ballistic junction based onα-T3lattice

The three-terminal ballistic junction (TBJ) has promising applications in nanoelectronics. We investigate the transport properties of aα-T3-based TBJ, where two typical configurations are considered, i.e. the A- and Z-TBJ. It is found that both A- and Z-TBJ exhibit transmission anisotropy, and the transmission of the A-TBJ has stronger anisotropy than that of the Z-TBJ. The amplitude of the rectification coefficient is smaller than that of phosphorene TBJ, but larger than that of graphene TBJ. When the symmetrical input is applied, the output voltage curve exhibits symmetric behavior. While in the case of asymmetric input, the symmetric behavior is broken, and the maximum value of the output voltage can reach a positive value. Interestingly, the voltage output shows a dramatic nonlinear response which may be useful for the voltage diode application with a push-pull input voltage. In addition, the heat fluxes of the asymmetric input are much smaller than those of the symmetric input. The maximum value of the heat flux under the symmetric input exceeds twice of that under the asymmetric input. Our results are useful to design nanoelectronic devices based onα-T3TBJ.

Full automation of point defect detection in transition metal dichalcogenides through a dual mode deep learning algorithm

Point defects often appear in two-dimensional (2D) materials and are mostly correlated with physical phenomena. The direct visualisation of point defects, followed by statistical inspection, is the most promising way to harness structure-modulated 2D materials. Here, we introduce a deep learning-based platform to identify the point defects in 2H-MoTe2: synergy of unit cell detection and defect classification. These processes demonstrate that segmenting the detected hexagonal cell into two unit cells elaborately cropped the unit cells: further separating a unit cell input into the Te2/Mo column part remarkably increased the defect classification accuracies. The concentrations of identified point defects were 7.16 × 1020 cm2 of Te monovacancies, 4.38 × 1019 cm2 of Te divacancies and 1.46 × 1019 cm2 of Mo monovacancies generated during an exfoliation process for TEM sample-preparation. These revealed defects correspond to the n-type character mainly originating from Te monovacancies, statistically. Our deep learning-oriented platform combined with atomic structural imaging provides the most intuitive and precise way to analyse point defects and, consequently, insight into the defect-property correlation based on deep learning in 2D materials.

Rational Design of Stimuli-Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule-Programmable Nanoelectronics

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging inorganic 2D materials (i2DMs) have been identified as alternative 2D materials to harbor a variety of active molecular components to move the current silicon-based semiconductor technology forward to a post-Moore era focused on molecule-based information processing components. In this regard, i2DMs benefits are not only for their prominent physiochemical properties (e.g., the existence of bandgap), but also for their high surface-to-volume ratio rich in reactive sites. Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli-responsive i2DMs capable of performing logical operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components-as active units triggered by different external inputs-onto pivotal i2DMs to assess their role in the expanding field of molecule-programmable nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.

The coexistence of high piezoelectricity and superior optical absorption in Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) monolayers

Bismuth chalcogenide and its derivatives have been attracting attention in various fields as semiconductors or topological insulators. Inspired by the high piezoelectric properties of Janus Bi2TeSeS monolayer and the excellent optical absorption properties of the Bi2X3 (X = Te, Se, S) monolayers, we theoretically predicted four new-type two-dimensional (2D) monolayers Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) using the first principles combined with density functional theory (DFT). The thermal, dynamic, and mechanical stabilities of Janus Bi2X2Y monolayers were confirmed based on ab initio molecular dynamics (AIMD) simulations, phonon dispersion, and elastic constants calculations. Their elastic properties, band structures, piezoelectric, and optical properties were systematically investigated. It was found that Janus Bi2X2Y monolayers have a typical Mexican hat-shaped valence band edge structure and, therefore, have a ring-shaped flat band edge, which results in their indirect band gaps. The results show that Janus Bi2X2Y monolayers are semiconductors with moderate band gaps (0.62-0.98 eV at the HSE + SOC level). After considering the electron-phonon renormalization (EPR), the band gaps are reduced by less than 5% at 0 K under the zero-point renormalization (ZPR) and further reduced by approximately 10% at 300 K. Besides, Janus Bi2X2Y monolayers also exhibit excellent optical absorption properties in the blue-UV light region, with the peak values at the order of 8 × 105 cm-1. Particularly, the Janus Bi2Te2S monolayer was found to exhibit a piezoelectric strain coefficient d11 of up to 20.30 pm V-1, which is higher than that of most of the 2D materials. Our results indicate that Janus Bi2X2Y monolayers could be promising candidates in solar cells, optical absorption, and optoelectronic devices; especially, a Janus Bi2Te2S monolayer can also be an excellent piezoelectric material with great prospects in the fields of mechanical and electrical energy conversion.

Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications

The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.

Single Quasi-1D Chains of Sb2Se3 Encapsulated within Carbon Nanotubes

The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.

Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation

Mechanical exfoliation methods of two-dimensional materials have been an essential process for advanced devices and fundamental sciences. However, the exfoliation method usually generates various thick flakes, and a bunch of thick bulk flakes usually covers an entire substrate. Here, we developed a method to selectively isolate mono- to quadlayers of transition metal dichalcogenides (TMDCs) by sonication in organic solvents. The analysis reveals the importance of low interface energies between solvents and TMDCs, leading to the effective removal of bulk flakes under sonication. Importantly, a monolayer adjacent to bulk flakes shows cleavage at the interface, and the monolayer can be selectively isolated on the substrate. This approach can extend to preparing a monolayer device with crowded 17 electrode fingers surrounding the monolayer and for the measurement of electrostatic device performance.