Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin

Surface chemistry altering electronic behaviour of liquid metal-derived tin oxide nanosheets

Possessing excellent electronic properties and high chemical stability, semiconducting n-type two-dimensional (2D) tin dioxide (SnO2) nanosheets have been featured in sensing and electrocatalysis applications recently. Derived from non-layered crystal structures, 2D SnO2 has abundant unsaturated dangling bonds existing at the surface, providing interfacial activity. How the surface chemistry alters the electronic properties of 2D SnO2 nanomaterials remains unexplored. In this study, we synthesised ultra-thin 2D SnO2 nanosheets using a liquid metal (LM) touch printing technique and investigated experimentally and theoretically how the interactions of organic solvents composed of alkyl and hydroxyl groups with the surface of LM-derived 2D SnO2 modulate the electronic properties. It was found that alkane solvents can physically absorb onto the SnO2 surface with no impact on the material conductivity. Alcohol-based solvents on the other hand interact with the SnO2 surface via chemical absorptions primarily, in which oxygen atoms of hydroxyl groups in the alcohols form bonds with the surface atoms of SnO2. The binding stability is determined by the length and configuration of the hydrocarbon chain in alcohols. As representative long-chain alcohols, 1-octanol and 1-pentanol attach onto the SnO2 surface strongly, lowering the binding energy of Sn4+ and reducing the electron transfer ability of SnO2 nanosheets. Consequently, the electronic properties, i.e. conductivity and electronic mobility of SnO2 nanosheet-based electronic devices are decreased significantly.

Atomic engineering of two-dimensional materials via liquid metals

Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.

Liquid Metal Doping Induced Asymmetry in Two-Dimensional Metal Oxides

The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.

Liquid-Metal-Based Spin-Coating Exfoliation for Atomically Thin Metal Oxide Synthesis

Two-dimensional (2D) semiconductors possess exceptional electronic, optical, and magnetic properties, making them highly desirable for widespread applications. However, conventional mechanical exfoliation and epitaxial growth methods are insufficient in meeting the demand for atomically thin films covering large areas while maintaining high quality. Herein, leveraging liquid metal oxidation reaction, we propose a motorized spin-coating exfoliation strategy to efficiently produce large-area 2D metal oxide (2DMO) semiconductors with high crystallinity, atomically thin thickness, and flat surfaces on diverse substrates. Moreover, we realized a 2D gallium oxide-based deep ultraviolet solar-blind photodetector featuring a metal-semiconductor-metal structure, showcasing high responsivity (8.24 A W-1) at 254 nm and excellent sensitivity (4.3 × 1012 cm Hz1/2 W-1). This novel liquid-metal-based spin-coating exfoliation strategy offers great potential for synthesizing atomically thin 2D semiconductors, opening new avenues for future functional electronic and optical applications.

Ultrathin Boundary-Less SnO2 Films with Surface-Activated Two-Dimensional Nanograins Enable Fast and Sensitive Hydrogen Gas Sensing

Fast and reliable semiconductor hydrogen sensors are crucially important for the large-scale utilization of hydrogen energy. One major challenge that hinders their practical application is the elevated temperature required, arising from undesirable surface passivation and grain-boundary-dominated electron transportation in the conventional nanocrystalline sensing layers. To address this long-standing issue, in the present work, we report a class of highly reactive and boundary-less ultrathin SnO2 films, which are fabricated by the topochemical transformation of 2D SnO transferred from liquid Sn-Bi droplets. The ultrathin SnO2 films are purposely made to consist of well-crystallized quasi-2D nanograins with in-plane grain sizes going beyond 30 nm, whereby the hydroxyl adsorption and grain boundary side-effects are effectively suppressed, giving rise to an activated (101)-dominating dangling-bond surface and a surface-controlled electrical transportation with an exceptional electron mobility of 209 cm2 V-1 s-1. Our work provides a new cost-effective strategy to disruptively improve the gas reception and transduction of SnO2. The proposed chemiresistive sensors exhibit fast, sensitive, and selective hydrogen sensing performance at a much-reduced working temperature of 60 °C. The remarkable sensing performance as well as the simple and scalable fabrication process of the ultrathin SnO2 films render the thus-developed sensors attractive for long awaited practical applications in hydrogen-related industries.

Gallium-based liquid metals as reaction media for nanomaterials synthesis

Gallium-based liquid metals (LMs) and their alloys have gained prominence in the realm of flexible and stretchable electronics. Recent advances have expanded the interest to explore the electron-rich core and interface of LMs to synthesize various nanomaterials, where Ga-based LMs serve as versatile reaction media. In this paper, we delve into the latest developments within this burgeoning field. Our discussion begins by elucidating the unique attributes of LMs that render them suitable as reaction media, including their high metal solubility, low standard reduction potential, self-limiting oxidation and ultra-smooth and "layer" surface. We then provide a comprehensive categorized summary of utilizing these features to fabricate a variety of nanomaterials, including pure metallic materials (metal alloys, metal crystals, porous metals, high-entropy alloys and metallic single atoms), metal-inorganic compounds (2D metal oxides, 2D metallic inorganic compounds and 2D graphitic materials), as well as metal-organic composites (metal-organic frameworks). This paper concludes by discussing the current challenges in this field and exploring potential future directions. The versatility and unique properties of Ga-based LMs are poised to play a pivotal role in the future of nanomaterial science, paving the way for more efficient, sustainable, and innovative technological solutions.

Probing the Interaction between Individual Metal Nanocrystals and Two-Dimensional Metal Oxides via Electron Energy Loss Spectroscopy

Metal nanoparticles can photosensitize two-dimensional metal oxides, facilitating their electrical connection to devices and enhancing their abilities in catalysis and sensing. In this study, we investigated how individual silver nanoparticles interact with two-dimensional tin oxide and antimony-doped indium oxide using electron energy loss spectroscopy (EELS). The measurement of the spectral line width of the longitudinal plasmon resonance of the nanoparticles in absence and presence of 2D materials allowed us to quantify the contribution of chemical interface damping to the line width. Our analysis reveals that a stronger interaction (damping) occurs with 2D antimony-doped indium oxide due to its highly homogeneous surface. The results of this study offer new insight into the interaction between metal nanoparticles and 2D materials.

Liquid-Metal-Assisted Synthesis of Patterned GaN Thin Films for High-Performance UV Photodetectors Array

GaN's outstanding physical characteristics allow for a wide range of applications in numerous industries. Although individual GaN-based ultraviolet (UV) photodetectors are the subject of in-depth research in recent decades, the demand for photodetectors array is rising as a result of advances in optoelectronic integration technology. However, as a prerequisite for constructing GaN-based photodetectors array, large-area, patterned synthesis of GaN thin films remains a certain challenge. This work presents a facile technique for pattern growing high-quality GaN thin films for the assembly of an array of high-performance UV photodetectors. This technique uses UV lithography, which is not only very compatible with common semiconductor manufacturing techniques, but also enables precise patterning modification. A typical detector has impressive photo-response performance under 365 nm irradiation, with an extremely low dark current of 40 pA, a high Ilight /Idark ratio over 105 , a high responsivity of 4.23 AW-1 , and a decent specific detectivity of 1.76 × 1012 Jones. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable UV image sensor with enough spatial resolution. These outcomes highlight the proposed patterning technique's enormous potential.

Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping

In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00μB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52μB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00μB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00μB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.

Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities

Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.

Two-way rushing travel: Cathodic-anodic coupling of Bi2O3-SnO@CuO nanowires, a bifunctional catalyst with excellent CO2RR and MOR performance for the efficient production of formate

Electrocatalytic carbon dioxide reduction reaction (CO2RR) generates high value-added products and simultaneously reduces excess atmospheric CO2 concentrations, is regarded as a potential approach to achieve carbon neutrality. However, the kinetic process of the anode oxygen evolution reaction (OER) is slow, resulting in a poor electrochemical efficiency of CO2RR. It is a breakthrough to replace OER with methanol oxidation reaction (MOR), which has more advantageous reaction kinetics. Herein, this work proposed a bifunctional catalyst Bi2O3-SnO modified CuO nanowires (Bi2O3-SnO@CuO NWs) with excellent CO2RR and MOR performance. For CO2RR, Bi2O3-SnO@CuO NWs achieved more than 90% formate selectivity at wide potential windows from -0.88 to -1.08 V (vs. reversible hydrogen electrode (RHE)), peaking at 96.6%. Meanwhile, anodic Bi2O3-SnO@CuO NWs achieved 100 mA cm-2 at a low potential of 1.53 V (vs. RHE), possessing nearly 100% formate selectivity ranging from 1.6 to 1.8 V (vs. RHE). Impressively, by coupling cathodic CO2RR and anodic MOR, the integrated electrolytic cell realized co-production of formate (cathode: 94.7% and anode: 97.5%), minimizing the energy input by approximately 69%, compared with CO2RR. This work provided a meaningful perspective for the design of bifunctional catalysts and coupling reaction systems in CO2RR.

Liquid Metal Combinatorics toward Materials Discovery

Liquid metals and their derivatives provide several opportunities for fundamental and practical exploration worldwide. However, the increasing number of studies and shortage of desirable materials to fulfill different needs also pose serious challenges. Herein, to address this issue, a generalized theoretical frame that is termed as "Liquid Metal Combinatorics" (LMC) is systematically presented, and summarizes promising candidate technical routes toward new generation material discovery. The major categories of LMC are defined, and eight representative methods for manufacturing advanced materials are outlined. It is illustrated that abundant targeted materials can be efficiently designed and fabricated via LMC through deep physical combinations, chemical reactions, or both among the main bodies of liquid metals, surface chemicals, precipitated ions, and other materials. This represents a large class of powerful, reliable, and modular methods for innovating general materials. The achieved combinatorial materials not only maintained the typical characteristics of liquid metals but also displayed distinct tenability. Furthermore, the fabrication strategies, wide extensibility, and pivotal applications of LMC are classified. Finally, by interpreting the developmental trends in the area, a perspective on the LMC is provided, which warrants its promising future for society.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.

Scalable and Reconfigurable Green Electronic Textiles with Personalized Comfort Management

Electronic textiles, inherited with the wearability of conventional clothes, are deemed fundamental for emerging wearable electronics, particularly in the Internet of Things era. However, the electronic waste produced by electronic textiles will further exacerbate the severe pollution in traditional textiles. Here, we develop a large-scale green electronic textile using renewable bio-based polylactic acid and sustainable eutectic gallium-indium alloys. The green electronic textile is extremely abrasion resistant and can degrade naturally in the environment even if abrasion produces infinitesimal amounts of microplastics. The mass loss and performance change rates of the reconstituted green electronic textiles are all below 5.4% after going through the full-cycle recycling procedure. This green electronic textile delivers high physiological comfort (including electronic comfort and thermal-moisture comfort), enables wireless power supply (without constraints by, e.g., wires and ports), has 2 orders of magnitude better air and moisture permeability than the body requires, and can lower skin temperature by 5.2 °C.

Structural and Electronic Properties of SnO Downscaled to Monolayer

Two-dimensional (2D) SnO is a p-type semiconductor that has received research and industrial attention for device-grade applications due to its bipolar conductivity and transparent semiconductor nature. The first-principles investigations based on the generalized gradient approximation (GGA) level of theory often failed to accurately model its structure due to interlayer Van der Waals interactions. This study is carried out to calculate structural and electronic properties of bulk and layered structures of SnO using dispersion correction scheme DFT+D3 with GGA-PBE to deal with the interactions which revealed good agreement of the results with reported data. The material in three-dimensional bulk happened to be an indirect gap semiconductor with a band gap of 0.6 eV which is increased to 2.85 eV for a two-dimensional monolayer structure. The detailed analysis of the properties demonstrated that the SnO monolayer is a promising candidate for future optoelectronics and spintronics devices, especially thin film transistors.

Progress on two-dimensional binary oxide materials

Two-dimensional van der Waals (2D vdW) materials have attracted much attention because of their unique electronic and optical properties. Since the successful isolation of graphene in 2004, many interesting 2D materials have emerged, including elemental olefins (silicene, germanene, etc.), transition metal chalcogenides, transition metal carbides (nitrides), hexagonal boron, etc. On the other hand, 2D binary oxide materials are an important group in the 2D family owing to their high structural diversity, low cost, high stability, and strong adjustability. This review systematically summarizes the research progress on 2D binary oxide materials. We discuss their composition and structure in terms of vdW and non-vdW categories in detail, followed by a discussion of their synthesis methods. In particular, we focus on strategies to tailor the properties of 2D oxides and their emerging applications in different fields. Finally, the challenges and future developments of 2D binary oxides are provided.

Reliable Memristor Based on Ultrathin Native Silicon Oxide

Memristors based on two-dimensional (2D) materials can exhibit great scalability and ultralow power consumption, yet the structural and thickness inhomogeneity of ultrathin electrolytes lowers the production yield and reliability of devices. Here, we report that the self-limiting amorphous SiO_x (∼2.7 nm) provides a perfect atomically thin electrolyte with high uniformity, featuring a record high production yield. With the guidance of physical modeling, we reveal that the atomic thickness of SiO_x enables anomalous resistive switching with a transition to an analog quasi-reset mode, where the filament stability can be further enhanced using Ag-Au nanocomposite electrodes. Such a picojoule memristor shows record low switching variabilities (C2C and D2D variation down to 1.1 and 2.6%, respectively), good retention at a few microsiemens, and high conductance-updating linearity, constituting key metrics for analog neural networks. In addition, the stable high-resistance state is found to be an excellent source for true random numbers of Gaussian distribution. This work opens up opportunities in mass production of Si-compatible memristors for ultradense neuromorphic and security hardware.

Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties

As an emerging research field, two-dimensional (2D) metals have been the subject of increasing research efforts in recent years due to their potential applications. However, unlike typical 2D layered materials, such as graphene, which can be exfoliated from their bulk parent compounds, it is hardly possible to produce 2D metals through exfoliation techniques due to the absence of Van der Waals gaps. Indeed, the lack of effective material preparation methods severely limits the development of this research field. Here, we report a PDMS-assisted hot-pressing method in glovebox to obtain ultraflat nanometer-thick 2D metals/metal oxide amorphous films of various low-melting-point metals and alloys, e.g., gallium (Ga), indium (In), tin (Sn), and Ga0.87Ag0.13 alloy. The valence states extracted from X-ray photoelectron spectroscopy (XPS) indicate that the ratios of oxidation to metal in our 2D films vary among metals. The temperature-dependent electronic measurements show that the transport behavior of 2D metal/metal oxide films conform with the 2D Mott’s variable range hopping (VRH) model. Our experiments provide a feasible and effective approach to obtain various 2D metals.

Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases

Indium nitride (InN) has been of significant interest for creating and studying two-dimensional electron gases (2DEG). Herein we demonstrate the formation of 2DEGs in ultrathin doped and undoped 2D InN nanosheets featuring high carrier mobilities at room temperature. The synthesis is carried out via a two-step liquid metal-based printing method followed by a microwave plasma-enhanced nitridation reaction. Ultrathin InN nanosheets with a thickness of ∼2 ± 0.2 nm were isolated over large areas with lateral dimensions exceeding centimeter scale. Room temperature Hall effect measurements reveal carrier mobilities of ∼216 and ∼148 cm² V^-1 s^-1 for undoped and doped InN, respectively. Further analysis suggests the presence of defined quantized states in these ultrathin nitride nanosheets that can be attributed to a 2D electron gas forming due to strong out-of-plane confinement. Overall, the combination of electronic and plasmonic features in undoped and doped ultrathin 2D InN holds promise for creating advanced optoelectronic devices and functional 2D heterostructures.

Vacuum-Free Liquid-Metal-Printed 2D Indium-Tin Oxide Thin-Film Transistor for Oxide Inverters

A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.2 × 10¹⁹ cm^-3 was prepared in an ambient atmosphere. The 2D-ITO-TFT operated in full depletion with a threshold voltage of -2.1 V and demonstrated good TFT device characteristics such as a high saturation mobility of ∼27 cm² V^-1 s^-1, a small subthreshold slope of <382 mV decade^-1, and a large on/off-current ratio of >10⁹. The TFT device simulation analysis found that the 2D-ITO-TFT performances were controlled by the shallow acceptor-like in-gap defects spreading in the midgap region of over 1.0 eV below the conduction band minimum. Post-thermal annealing tuned the electron density of the 2D-ITO channel and enabled it to produce enhancement and depletion-mode 2D-ITO-TFTs. A full signal swing zero-V_GS-load n-type metal-oxide semiconductor (NMOS) inverter composed of depletion-load/enhancement-driver 2D-ITO-TFTs and a complementary inverter with p-channel 2D-SnO-TFT were successfully demonstrated using all 2D-oxide-TFTs.

Anomalous Thermal Expansion in Ising-like Puckered Sheets

Motivated by efforts to create thin nanoscale metamaterials and understand atomically thin binary monolayers, we study the finite temperature statistical mechanics of arrays of bistable buckled dilations embedded in free-standing two-dimensional crystalline membranes that are allowed to fluctuate in three dimensions. The buckled nodes behave like discrete, but highly compressible, Ising spins, leading to a phase transition at T_{c} with singularities in the staggered "magnetization," susceptibility, and specific heat, studied via molecular dynamics simulations. Unlike conventional Ising models, we observe a striking divergence and sign change of the coefficient of thermal expansion near T_{c} caused by the coupling of flexural phonons to the buckled spin texture. We argue that a phenomenological model coupling Ising degrees of freedom to the flexural phonons in a thin elastic sheet can explain this unusual response.

Liquid metals: an ideal platform for the synthesis of two-dimensional materials

The surfaces of liquid metals can serve as a platform to synthesise two-dimensional materials. By exploiting the self-limiting Cabrera-Mott oxidation reaction that takes place at the surface of liquid metals exposed to ambient air, an ultrathin oxide layer can be synthesised and isolated. Several synthesis approaches based on this phenomenon have been developed in recent years, resulting in a diverse family of functional 2D materials that covers a significant fraction of the periodic table. These straightforward and inherently scalable techniques may enable the fabrication of novel devices and thus harbour significant application potential. This review provides a brief introduction to liquid metals and their alloys, followed by detailed guidance on each developed synthesis technique, post-growth processing methods, integration processes, as well as potential applications of the developed materials.

Applications of liquid metals in nanotechnology

Post-transition liquid metals (LMs) offer new opportunities for accessing exciting dynamics for nanomaterials. As entities with free electrons and ions as well as fluidity, LM-based nanomaterials are fundamentally different from their solid counterparts. The low melting points of most post-transition metals (less than 330 °C) allow for the formation of nanodroplets from bulk metal melts under mild mechanical and chemical conditions. At the nanoscale, these liquid state nanodroplets simultaneously offer high electrical and thermal conductivities, tunable reactivities and useful physicochemical properties. They also offer specific alloying and dealloying conditions for the formation of multi-elemental liquid based nanoalloys or the synthesis of engineered solid nanomaterials. To date, while only a few nanosized LM materials have been investigated, extraordinary properties have been observed for such systems. Multi-elemental nanoalloys have shown controllable homogeneous or heterogeneous core and surface compositions with interfacial ordering at the nanoscale. The interactions and synergies of nanosized LMs with polymeric, inorganic and bio-materials have also resulted in new compounds. This review highlights recent progress and future directions for the synthesis and applications of post-transition LMs and their alloys. The review presents the unique properties of these LM nanodroplets for developing functional materials for electronics, sensors, catalysts, energy systems, and nanomedicine and biomedical applications, as well as other functional systems engineered at the nanoscale.

Recent advances in the fabrication of 2D metal oxides

Atomically thin two-dimensional (2D) metal oxides exhibit unique optical, electrical, magnetic, and chemical properties, rendering them a bright application prospect in high-performance smart devices. Given the large variety of both layered and non-layered 2D metal oxides, the controllable synthesis is the critical prerequisite for enabling the exploration of their great potentials. In this review, recent progress in the synthesis of 2D metal oxides is summarized and categorized. Particularly, a brief overview of categories and crystal structures of 2D metal oxides is firstly introduced, followed by a critical discussion of various synthesis methods regarding the growth mechanisms, advantages, and limitations. Finally, the existing challenges are presented to provide possible future research directions regarding the synthesis of 2D metal oxides. This work can provide useful guidance on developing innovative approaches for producing both 2D layered and non-layered nanostructures and assist with the acceleration of the research of 2D metal oxides.

Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor, that is, a memtransistor, an integrated device of a memristor and a transistor, was demonstrated to advance next-generation neuromorphic computing technology. The polycrystalline 2D-SnO2 memristors derived from a low-temperature and vacuum-free liquid metal process offer several interesting resistive switching properties such as excellent digital/analog resistive switching, multistate storage, and gate-tunability function of resistance switching states. Significantly, the gate tunability function that is not achievable in conventional two-terminal memristors provides the capability to implement heterosynaptic analog switching by regulating gate bias for enabling complex neuromorphic learning. We successfully demonstrated that the gate-tunable synaptic device dynamically modulated the analog switching behavior with good linearity and an improved conductance change ratio for high recognition accuracy learning. The presented gate-tunable 2D-oxide memtransistor will advance neuromorphic device technology and open up new opportunities to design learning schemes with an extra degree of freedom.

Liquid-Metal-Assisted Deposition and Patterning of Molybdenum Dioxide at Low Temperature

Molybdenum dioxide (MoO2), considering its near-metallic conductivity and surface plasmonic properties, is a great material for electronics, energy storage devices and biosensing. Yet to this day, room-temperature synthesis of large area MoO2, which allows deposition on arbitrary substrates, has remained a challenge. Due to their reactive interfaces and specific solubility conditions, gallium-based liquid metal alloys offer unique opportunities for synthesizing materials that can meet these challenges. Herein, a substrate-independent liquid metal-based method for the room temperature deposition and patterning of MoO2 is presented. By introducing a molybdate precursor to the surrounding of a eutectic gallium-indium alloy droplet, a uniform layer of hydrated molybdenum oxide (H2MoO3) is formed at the interface. This layer is then exfoliated and transferred onto a desired substrate. Utilizing the transferred H2MoO3 layer, a laser-writing technique is developed which selectively transforms this H2MoO3 into crystalline MoO2 and produces electrically conductive MoO2 patterns at room temperature. The electrical conductivity and plasmonic properties of the MoO2 are analyzed and demonstrated. The presented metal oxide room-temperature deposition and patterning method can find many applications in optoelectronics, sensing, and energy industries.

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm2 V-1 s-1, a high on/off current ratio of ∼106, low off current of <10-12 A, and a subthreshold swing of ∼2.5 V decade-1, which was improved compared with the conventional p-channel SnO TFTs. We also fabricated metal-liquid printing-based n-channel oxide TFTs such as n-channel SnO2 and In2O3-TFTs and developed ultrathin-channel oxide-TFT-based low-power complementary inverter circuits with the developed p-channel SnO TFTs. The full swing of voltage-transfer characteristics with a voltage gain of ∼10 and a power dissipation of <4 nW for p-SnO/n-SnO2 and ∼120 and <2 nW for p-SnO/n-In2O3-CMOS inverters were successfully demonstrated.

High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The well-known high-k dielectrics, including HfO₂, ZrO₂, and SrTiO₃, feature three-dimensional lattice structures and are thus not easily obtained in the form of distinct ultrathin sheets. Therefore, their deposition as ultrathin layers still imposes challenges for electronic industries. Consequently, new high-k nanomaterials with k in the range of 40 to 100 and a band gap exceeding 4 eV are highly sought after. Antimony oxide nanosheets appear as a potential candidate that could fulfill these characteristics. Here, we report on the stoichiometric cubic polymorph of 2D antimony oxide (Sb₂O₃) as an ideal high-k dielectric sheet that can be synthesized via a low-temperature, substrate-independent, and silicon-industry-compatible liquid metal synthesis technique. A bismuth-antimony alloy was produced during the growth process. Preferential oxidation caused the surface of the melt to be dominated by α-Sb₂O₃. This ultrathin α-Sb₂O₃ was then deposited onto desired surfaces via a liquid metal print transfer. A tunable sheet thickness between ∼1.5 and ∼3 nm was achieved, while the lateral dimensions were within the millimeter range. The obtained α-Sb₂O₃ exhibited high crystallinity and a wide band gap of ∼4.4 eV. The relative permittivity assessment revealed a maximum k of 84, while a breakdown electric field of ∼10 MV/cm was observed. The isolated 2D α-Sb₂O₃ nanosheets were utilized in top-gated field-effect transistors that featured low leakage currents, highlighting that the obtained material is a promising gate oxide for conventional and van der Waals heterostructure-based electronics.

Evaluation of Sn(II) aminoalkoxide precursors for atomic layer deposition of SnO thin films

We have successfully prepared and structurally characterized a family of eight tin(II) heteroleptic complexes, [Sn(NR₂)(ON)]_x (NR₂ = NMe₂ (1a-d) or N(SiMe₃)₂ (2a-d); x = 1 or 2) and four homoleptic systems, [Sn(κ²-ON)₂] (3a-d) from a series of aminoalcohols and fluorinated aminoalcohols (H{ON}) having a different number of methyl/trifluoromethyl substituents at the α-carbon atom, [HOC(R¹)(R₂)CH₂NMe₂] (R¹ = R² = H (H{dmae}) (a); R¹ = H, R² = Me (H{dmap}) (b); R¹ = R² = Me (H{dmamp}) (c); R¹ = R² = CF₃ (H{Fdmamp}) (d)). The synthetic route used reactions of either [Sn{N(SiMe₃)₂}₂] or [Sn(NMe₂)₂] with one or two equivalents of the aminoalcohols (a-d) in dry aprotic solvents leading to elimination of amines and formation of the Sn(II) species 1a-d, 2a-d and 3a-d respectively. All complexes were thoroughly characterized by NMR spectroscopy (¹H, ¹³C, ¹⁹F, and ¹¹⁹Sn) as well as single-crystal X-ray diffraction studies. In all case the solid state molecular structures of the complexes have been unambiguously established: the solid state structures 1a-b and 1c are dimeric with central {Sn₂N₂} cores resulting from bridging {μ²-NMe₂} units, in which the Sn(II) atoms are four-coordinate. In contrast, the solid state structures of complexes 1c and 2a-c possess similarly dimeric structures, with four-coordinate Sn(II) atoms, in which the oxygen atoms of the {ON} ligand bridge two Sn(II) centres to form dimers with a central {Sn₂O₂} core. Uniquely in this study, 2d, [Sn(κ²-O,N-OCMe₂CH₂NMe₂){N(SiMe₃)₂}] is monomeric with a three coordinate Sn(II) centre. The homoleptic complexes 3a-d are all isostructural with monomeric four-coordinate structures with disphenoidal geometries. Solution state NMR studies reveal complicated ligand exchange processes in the case of the heteroleptic complexes 1a-d and 2a-d. Contrastingly, the homoleptic systems 3a-d show no such behaviour. While complexes 1a-d and 2a-d displayed either poor thermal stability or multistep thermal decomposition processes, the thermal behaviour of the homoleptic complexes, 3a-d, was investigated in order to determine the effects, if any, of the degree of fluorination and asymmetry of the aminoalkoxide ligands on the suitability of these complexes as ALD precursors for the deposition of SnO thin films.

Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals

The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi₂ O₃ -doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi-Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi₂ O₃ dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.

An exploration into two-dimensional metal oxides, and other 2D materials, synthesised via liquid metal printing and transfer techniques

Two-dimensional (2D) metal oxides can be difficult to synthesise, and scaling up production using traditional methods is challenging. However, a new liquid metal-based technique, that utilises both "top-down" and "bottom-up" processes, has recently been introduced. These liquids oxidise to form an oxide surface "skin" which may be exfoliated as a 2D flake and subsequently used in various electronic devices and chemical reactions.

2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

Two-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

Ultrathin transparent conductive oxides (TCOs) are emerging candidates for next-generation transparent electronics. Indium oxide (In₂O₃) incorporated with post-transition-metal ions (e.g., Sn) has been widely studied due to their excellent optical transparency and electrical conductivity. However, their electron transport properties are deteriorated at the ultrathin two-dimensional (2D) morphology compared to that of intrinsic In₂O₃. Here, we explore the domain of transition-metal dopants in ultrathin In₂O₃ with the thicknesses down to the single-unit-cell limit, which is realized in a large area using a low-temperature liquid metal printing technique. Zn dopant is selected as a representative to incorporate into the In₂O₃ rhombohedral crystal framework, which results in the gradual transition of the host to quasimetallic. While the optical transmittance is maintained above 98%, an electron field-effect mobility of up to 87 cm² V^-1 s^-1 and a considerable sub-kΩ^-1 cm^-1 ranged electrical conductivity are achieved when the Zn doping level is optimized, which are in a combination significantly improved compared to those of reported ultrathin TCOs. This work presents various opportunities for developing high-performance flexible transparent electronics based on emerging ultrathin TCO candidates.

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

2D metal oxides (2DMOs) have been widely applied in the fields of electronic, magnetic, optical, and catalytic materials, owing to their rich surface chemistry and unique electronic structures. However, their further development faces challenges such as the difficulty in fabricating 2DMOs with unstable surface induced by strong surface polarizability, or the high cost and limited yield of the fabrication process. Recently, liquid metals have shown great potential in the fabrication of 2DMOs. The native oxide skin formed on the surface of liquid metals can be considered as a perfect 2D planar material. Due to the solubility, fluidity, and reactivity of liquid metals, they can act as the solvent, reactant, and interface in the fabrication of 2DMOs. Moreover, liquid metals undergo a liquid-solid phase transition, enabling them to be a symmetric matched substrate for growing high-quality 2DMOs. An insightful survey of the recent progress in this research direction is presented. The features of liquid metals including good solubility, chemical reactivity, weak interface force, and liquid-solid phase transitions are introduced in detail. Furthermore, strategies for the fabrication of 2DMOs by virtue of these features are summarized comprehensively. Finally, current challenges and prospects regarding the future development in the fabrication of 2DMOs via liquid metals are highlighted.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W^-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

The first-principles study of nH-VSn complex: impurity effects on p-type SnO monolayer

As a rare typical p-channel layered oxide semiconductor, two-dimensional tin monoxide has attracted great attention due to its wide promising applications in nano-electronics. Using the first-principles calculation, we studied the effects of multi-hydrogen-tin/oxygen vacancy complex impurities on the electronic properties of the p-type monolayer SnO. The calculation results indicated that O vacancy (V_O) is a donor and Sn vacancy (V_Sn) acts as a double acceptor. V_Sn should be the source of p-type in undoped SnO in an O-rich environment. When hydrogen is introduced, the more stable nH-V_Sn (n = 1, 2, and 3) complex defects can be formed. These complex impurities can affect the p-type SnO monolayer in the following three main ways: (i) the p-type H-V_Sn compensates the deeper acceptor level of V_Sn and enhances the majority carrier mobility. (ii) The more stable 2H-V_Sn neutralizes the p-type dopant nature of V_Sn and H-V_Sn. (iii) The 3H-V_Sn converts the defect to be an n-type dopant. Our results indicated that limitation of hydrogen is necessary for the preparation of high-quality p-type two-dimensional SnO, as a small amount of hydrogen produces positive effect on p-type SnO; however, the higher concentration of hydrogen is destructive to the p-type character of monolayer SnO.

Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators

The predicted strong piezoelectricity for monolayers of group IV monochalcogenides, together with their inherent flexibility, makes them likely candidates for developing flexible nanogenerators. Within this group, SnS is a potential choice for such nanogenerators due to its favourable semiconducting properties. To date, access to large-area and highly crystalline monolayer SnS has been challenging due to the presence of strong inter-layer interactions by the lone-pair electrons of S. Here we report single crystal across-the-plane and large-area monolayer SnS synthesis using a liquid metal-based technique. The characterisations confirm the formation of atomically thin SnS with a remarkable carrier mobility of ~35 cm² V⁻¹ s⁻¹ and piezoelectric coefficient of ~26 pm V⁻¹. Piezoelectric nanogenerators fabricated using the SnS monolayers demonstrate a peak output voltage of ~150 mV at 0.7% strain. The stable and flexible monolayer SnS can be implemented into a variety of systems for efficient energy harvesting.

The presence of strong inter-layer interactions has hindered the synthesis efforts towards large-area and highly crystalline monolayer SnS. Here, the authors report synthesis of large-area monolayer SnS using a liquid metal-based technique, and fabricate piezoelectric nano-generators with average peak output voltage of 150 mV at 0.7% strain.

Recent advances in the template-confined synthesis of two-dimensional materials for aqueous energy storage devices

The template-confined synthesis strategy is a simple and effective methodology to prepare two-dimensional nanomaterials. It has multiple advantages including green process, controllable morphology and adjustable crystal structure, and therefore, it is promising in the energy storage realm to synthesize high-performance electrode materials. In this review, we summarize the recent advances in the template-confined synthesis of two-dimensional nanostructures for aqueous energy storage applications. The material design is discussed in detail to accommodate target usage in aqueous supercapacitors and zinc metal batteries. The remaining challenges and future prospective are also covered.

Preparation of pyramidal SnO/CeO2 nano-heterojunctions with enhanced photocatalytic activity for degradation of tetracycline

Pyramidal SnO/CeO₂ nano-heterojunction photocatalysts were successfully synthesized via a facile hydrothermal method. The structural characterization was investigated by using common characterization tools. The content of SnO affected the morphology and photocatalytic performance of the SnO/CeO₂ nano-heterojunctions. With the increase of the SnO content, the morphology of the samples changed from a spherical structure to a pyramidal structure. The photocurrent of the SnO/CeO₂ (1:6) sample was about 36 times that of pure CeO₂. With SnO/CeO₂ (1:6) as the photocatalyst, the degradation rate of tetracycline (TC) was 99% within 140 min under visible light and after five cyclic tests the photocatalytic efficiency of TC remained at 98%, which suggests that the SnO/CeO₂ (1:6) nano-heterojunction had a high photocatalytic efficiency and stable photocatalytic performance. These results indicate that SnO/CeO₂ (1:6) nano-heterojunction possesses broad prospects for industrial application.

Two-Dimensional Amorphous SnOx from Liquid Metal: Mass Production, Phase Transfer, and Electrocatalytic CO2 Reduction toward Formic Acid

Liquid metal forms a thin layer of oxide skin via exposure to oxygen and this layer could be exfoliated by mechanical delamination or gas-injection/solvent-dispersion. Although the room-temperature fabrication of two-dimensional (2D) oxide through gas-injection and water-dispersion has been successfully demonstrated, a synthetic protocol in nonaqueous solvent at elevated temperature still remains as a challenge. Herein we report the mass-production of amorphous 2D SnO_x nanoflakes with Bi decoration from liquid Sn-Bi alloy and selected nonaqueous solvents. The functional groups of the solvents play a key role in determining the final morphology of the product and the hydroxyl-rich solvents exhibit the best control toward 2D SnO_x. The different solvent-oxide interaction that facilitates this phase-transfer process is further discussed on the basis of DFT calculation. Finally, the as-obtained 2D SnO_x is evaluated in electrocatalytic CO₂ reduction with high faradaic efficiency (>90%) of formic acid and stable performance over 10 h.

Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications

Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.

Role of lone pair electrons in n-type thermoelectric properties of tin oxides

Oxide materials have shown promising thermoelectric applications due to their availability, tunability, and thermal stability. Among oxide materials, the layered tin oxides (SnO) attract raising attention in the electronic and optoelectronic field owing to their lone pair electrons. We have investigated the thermoelectric properties of layered SnO structures through first-principle calculations. SnO exhibits superior n-type thermoelectric properties and the metallicity of SnO becomes stronger with the number of layers increasing. The lone pair electrons around Sn atoms are the key factor to n-type properties and they will get bonded and anti-bonded in the case of interlayer interaction. Monolayer SnO exhibits the best thermoelectric performances and the average n-type ZT value of monolayer SnO can achieve 0.90 at 500-700 K. Our results demonstrate that layered SnO will be the potential n-type two-dimensional oxide thermoelectric material.

Peculiar piezoelectricity of atomically thin planar structures

The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.

Advantages of eutectic alloys for creating catalysts in the realm of nanotechnology-enabled metallurgy

The nascent field of nanotechnology-enabled metallurgy has great potential. However, the role of eutectic alloys and the nature of alloy solidification in this field are still largely unknown. To demonstrate one of the promises of liquid metals in the field, we explore a model system of catalytically active Bi-Sn nano-alloys produced using a liquid-phase ultrasonication technique and investigate their phase separation, surface oxidation, and nucleation. The Bi-Sn ratio determines the grain boundary properties and the emergence of dislocations within the nano-alloys. The eutectic system gives rise to the smallest grain dimensions among all Bi-Sn ratios along with more pronounced dislocation formation within the nano-alloys. Using electrochemical CO2 reduction and photocatalysis, we demonstrate that the structural peculiarity of the eutectic nano-alloys offers the highest catalytic activity in comparison with their non-eutectic counterparts. The fundamentals of nano-alloy formation revealed here may establish the groundwork for creating bimetallic and multimetallic nano-alloys.

Interfacial Rheology of Gallium-Based Liquid Metals

Gallium and its alloys react with oxygen to form a native oxide that encapsulates the liquid metal with a solid "skin". The viscoelasticity of this skin is leveraged in applications such as soft electronics, 3D printing, and components for microfluidic devices. In these applications, rheological characterization of the oxide skin is paramount for understanding and controlling liquid metals. Here, we provide a direct comparison of the viscoelastic properties for gallium-based liquid metals and illustrate the effect of different subphases and addition of a dopant on the elastic nature of the oxide skin. The du Noüy ring method is used to investigate the interfacial rheology of oxide skins formed by gallium-based liquid metal alloys. The results show that the oxide layer on gallium, eutectic gallium-indium, and Galinstan are viscoelastic with a yield stress. Furthermore, the storage modulus of the oxide layer is affected by exposure to water or when small amounts of aluminum dopant are added to the liquid metals. The former scenario decreases the interfacial storage modulus of the gallium by 35-85% while the latter increases the interfacial storage modulus by 25-45%. The presence of water also changes the chemical composition of the oxide skin. Scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy suggest that a microstructural evolution of the interface occurs when aluminum preferentially migrates from the bulk to the surface. These studies provide guidance on selecting liquid metals as well as simple methods to optimize their rheological behavior for future applications.