1
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Zhu M, Yin H, Cao J, Xu L, Lu P, Liu Y, Ding L, Fan C, Liu H, Zhang Y, Jin Y, Peng LM, Jin C, Zhang Z. Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403743. [PMID: 38862115 DOI: 10.1002/adma.202403743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 06/05/2024] [Indexed: 06/13/2024]
Abstract
Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.
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Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Huimin Yin
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Jiang Cao
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Peng Lu
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Yang Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Haiyang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Yuanfang Zhang
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chuanhong Jin
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
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2
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Kwak D, Kim H, Jang S, Kim BG, Cho D, Chang H, Lee JO. Investigation of Laser-Induced Graphene (LIG) on a Flexible Substrate and Its Functionalization by Metal Doping for Gas-Sensing Applications. Int J Mol Sci 2024; 25:1172. [PMID: 38256244 PMCID: PMC10816167 DOI: 10.3390/ijms25021172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Revised: 01/15/2024] [Accepted: 01/16/2024] [Indexed: 01/24/2024] Open
Abstract
Graphene materials synthesized using direct laser writing (laser-induced graphene; LIG) make favorable sensor materials because of their large surface area, ease of fabrication, and cost-effectiveness. In particular, LIG decorated with metal nanoparticles (NPs) has been used in various sensors, including chemical sensors and electronic and electrochemical biosensors. However, the effect of metal decoration on LIG sensors remains controversial; hypotheses based on computational simulations do not always match the experimental results, and even the experimental results reported by different researchers have not been consistent. In the present study, we explored the effects of metal decorations on LIG gas sensors, with NO2 and NH3 gases as the representative oxidizing and reducing agents, respectively. To eliminate the unwanted side effects arising from metal salt residues, metal NPs were directly deposited via vacuum evaporation. Although the gas sensitivities of the sensors deteriorate upon metal decoration irrespective of the metal work function, in the case of NO2 gas, they improve upon metal decoration in the case of NH3 exposure. A careful investigation of the chemical structure and morphology of the metal NPs in the LIG sensors shows that the spontaneous oxidation of metal NPs with a low work function changes the behavior of the LIG gas sensors and that the sensors' behaviors under NO2 and NH3 gases follow different principles.
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Affiliation(s)
- Dongwook Kwak
- Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (D.K.); (H.K.); (B.G.K.); (D.C.)
| | - Hyojin Kim
- Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (D.K.); (H.K.); (B.G.K.); (D.C.)
| | - Seunghun Jang
- Data Research Center, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (S.J.); (H.C.)
| | - Byoung Gak Kim
- Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (D.K.); (H.K.); (B.G.K.); (D.C.)
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (D.K.); (H.K.); (B.G.K.); (D.C.)
| | - Hyunju Chang
- Data Research Center, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (S.J.); (H.C.)
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong-gu, Daejeon 34114, Republic of Korea; (D.K.); (H.K.); (B.G.K.); (D.C.)
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3
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Miao R, Liang Y, Wen R, Jiang Z, Wang Y, Shao Q. Theoretical and experimental investigations of enhanced carbon nanotube-gold interface conductivity through nitrogen doping. NANOSCALE 2023; 16:249-261. [PMID: 38054377 DOI: 10.1039/d3nr04588a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
It is necessary to establish high-quality contact between carbon nanotubes and metals in carbon-based devices. However, how to control and reduce contact resistance still remains unsolved. In this study, the effect of N doping in single-walled carbon nanotubes on the contact resistance with gold was studied by combining theoretical calculation with experimental methods. The theoretical results indicate that nitrogen doping in carbon nanotubes can control the bottom of the carbon nanotube conduction band downward, the Fermi level enters the conduction band, the height of the Schottky barrier between the bottom of the carbon nanotube conduction band and the gold Fermi level decreases, and the increase in doping concentration leads to the decrease of Schottky barrier width. As a result, the conductivity between the gold and carbon nanotube interface is enhanced. During experiments, the carrier density and the current of the gold and carbon nanotube device increase gradually with the increase in N doping concentration and a good electron transport channel is established between the gold and carbon nanotubes. The high-quality contact is crucial to reducing the size, improving the performance, and reducing the power consumption of carbon-based devices.
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Affiliation(s)
- Rui Miao
- School of Electronics and Information Engineering, South China Normal University, Foshan, 528225, China
| | - Yujian Liang
- School of Electronics and Information Engineering, South China Normal University, Foshan, 528225, China
| | - Ruolan Wen
- School of Electronics and Information Engineering, South China Normal University, Foshan, 528225, China
| | - Zhenhong Jiang
- School of Electronics and Information Engineering, South China Normal University, Foshan, 528225, China
| | - Yue Wang
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Qingyi Shao
- Guangdong Provincial Key Laboratory of Nuclear Science, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China.
- School of Science, Jiangnan University, Wuxi, Jiangsu 214122, China
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4
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Bouwmeester D, Ghiasi TS, Borin Barin G, Müllen K, Ruffieux P, Fasel R, van der Zant HSJ. MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons. ACS APPLIED NANO MATERIALS 2023; 6:13935-13944. [PMID: 37588262 PMCID: PMC10425920 DOI: 10.1021/acsanm.3c01630] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Accepted: 06/28/2023] [Indexed: 08/18/2023]
Abstract
Atomically precise graphene nanoribbons (GNRs) are predicted to exhibit exceptional edge-related properties, such as localized edge states, spin polarization, and half-metallicity. However, the absence of low-resistance nanoscale electrical contacts to the GNRs hinders harnessing their properties in field-effect transistors. In this paper, we make electrical contact with nine-atom-wide armchair GNRs using superconducting alloy MoRe as well as Pd (as a reference), which are two of the metals providing low-resistance contacts to carbon nanotubes. We take a step toward contacting a single GNR by fabricating electrodes with needlelike geometry, with about 20 nm tip diameter and 10 nm separation. To preserve the nanoscale geometry of the contacts, we develop a PMMA-assisted technique to transfer the GNRs onto the prepatterned electrodes. Our device characterizations as a function of bias voltage and temperature show thermally activated gate-tunable conductance in GNR-MoRe-based transistors.
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Affiliation(s)
- Damian Bouwmeester
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Talieh S. Ghiasi
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Gabriela Borin Barin
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Klaus Müllen
- Max
Planck Institute for Polymer Research, 55128 Mainz, Germany
| | - Pascal Ruffieux
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Roman Fasel
- nanotech@surfaces
Laboratory, Empa, Swiss Federal Laboratories
for Materials Science and Technology, 8600 Dübendorf, Switzerland
- Department
of Chemistry, Biochemistry and Pharmaceutical Chemistry, University of Bern, Freiestrasse 3, CH-3012 Bern, Switzerland
| | - Herre S. J. van der Zant
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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5
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Thodkar K, Haluska M, Hierold C. Additive Influence of Top Metal Contact and Alumina Deposition on the Threshold Voltage of Suspended Carbon Nanotube Field-Effect Transistors. ACS OMEGA 2023; 8:27697-27702. [PMID: 37546614 PMCID: PMC10398841 DOI: 10.1021/acsomega.3c03602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/11/2023] [Indexed: 08/08/2023]
Abstract
One-dimensional nanostructures such as carbon nanotubes offer excellent properties useful for applications in gas sensors, piezoresistive devices, and radio frequency resonators. Considering their nanoscale form factor, carbon nanotubes (CNTs) are highly sensitive to surface adsorbents. This study presents the fabrication flow of CNT devices with extended passivated areas around electrical contacts between the CNT and source and drain electrodes. These types of structures could help in understanding the intrinsic CNT response by eliminating the analyte impact on the Schottky barrier regions of the CNT field-effect transistors (CNTFETs). The influence of multiple processing conditions on the electronic properties of CNTFETs with a suspended individual CNT used as the CNTFET channel is presented. Our findings show a threshold voltage shift in CNT ISD-Vg characteristics following the metal deposition and alumina atomic layer deposition.
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6
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Xie P, Sun Y, Chen C, Guo SY, Zhao Y, Jiao X, Hou PX, Liu C, Cheng HM. Enrichment of Large-Diameter Semiconducting Single-Walled Carbon Nanotubes by Conjugated Polymer-Assisted Separation. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2001. [PMID: 37446517 DOI: 10.3390/nano13132001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2023] [Revised: 06/14/2023] [Accepted: 06/19/2023] [Indexed: 07/15/2023]
Abstract
Semiconducting single-walled carbon nanotubes (s-SWCNTs) with large diameters are highly desired in the construction of high performance optoelectronic devices. However, it is difficult to selectively prepare large-diameter s-SWCNTs since their structure and chemical stability are quite similar with their metallic counterparts. In this work, we use SWCNTs with large diameter as a raw material, conjugated polymer of regioregular poly-(3-dodecylthiophene) (rr-P3DDT) with long side chain as a wrapping agent to selectively separate large-diameter s-SWCNTs. It is found that s-SWCNTs with a diameter of ~1.9 nm are effectively enriched, which shows a clean surface. By using the sorted s-SWCNTs as a channel material, we constructed thin-film transistors showing charge-carrier mobilities higher than 10 cm2 V-1 s-1 and on/off ratios higher than 103.
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Affiliation(s)
- Piao Xie
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Chao Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Shu-Yu Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yiming Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Xinyu Jiao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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7
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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8
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Xu L, Jiao X, Shi C, Wu AP, Hou PX, Liu C, Cheng HM. Single-Walled Carbon Nanotube/Copper Core-Shell Fibers with a High Specific Electrical Conductivity. ACS NANO 2023; 17:9245-9254. [PMID: 37129039 DOI: 10.1021/acsnano.3c00488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Carbon nanotube (CNT)/Cu core-shell fibers are a promising material for lightweight conductors due to their higher conductivity than pure CNT fibers and lower density than traditional Cu wires. However, the electrical properties of the hybrid fiber have been unsatisfactory, mainly because of the weak CNT-Cu interfacial interaction. Here we report the fabrication of a single-walled CNT (SWCNT)/Cu core-shell fiber that outperforms commercial Cu wires in terms of specific electrical conductivity and current carrying capacity. A dense and uniform Cu shell was coated on the surface of wet-spun SWCNT fibers using a combination of magnetron sputtering and electrochemical deposition. Our SWCNT/Cu core-shell fibers had an ultrahigh specific electrical conductivity of (1.01 ± 0.04) × 104 S m2 kg-1, 56% higher than Cu. Experimental and simulation results show that oxygen-containing functional groups on the surface of a wet-spun SWCNT fiber interact with the sputtered Cu atoms to produce strong bonding. Our hybrid fiber preserved its integrity and conductivity well after more than 5000 bending cycles. Furthermore, the current carrying capacity of the coaxial fiber reached 3.14 × 105 A cm-2, three times that of commercial Cu wires.
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Affiliation(s)
- LeLe Xu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 230026, China
| | - XinYu Jiao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 230026, China
| | - Chao Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - An-Ping Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 230026, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 230026, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
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9
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Su W, Li X, Li L, Yang D, Wang F, Wei X, Zhou W, Kataura H, Xie S, Liu H. Chirality-dependent electrical transport properties of carbon nanotubes obtained by experimental measurement. Nat Commun 2023; 14:1672. [PMID: 36966164 PMCID: PMC10039901 DOI: 10.1038/s41467-023-37443-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 03/15/2023] [Indexed: 03/27/2023] Open
Abstract
Establishing the relationship between the electrical transport properties of single-wall carbon nanotubes (SWCNTs) and their structures is critical for the design of high-performance SWCNT-based electronic and optoelectronic devices. Here, we systematically investigated the effect of the chiral structures of SWCNTs on their electrical transport properties by measuring the performance of thin-film transistors constructed by eleven distinct (n, m) single-chirality SWCNT films. The results show that, even for SWCNTs with the same diameters but different chiral angles, the difference in the on-state current or carrier mobility could reach an order of magnitude. Further analysis indicates that the electrical transport properties of SWCNTs have strong type and family dependence. With increasing chiral angle for the same-family SWCNTs, Type I SWCNTs exhibit increasing on-state current and mobility, while Type II SWCNTs show the reverse trend. The differences in the electrical properties of the same-family SWCNTs with different chiralities can be attributed to their different electronic band structures, which determine the contact barrier between electrodes and SWCNTs, intrinsic resistance and intertube contact resistance. Our present findings provide an important physical basis for performance optimization and application expansion of SWCNT-based devices.
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Affiliation(s)
- Wei Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiao Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Linhai Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Dehua Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Futian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiaojun Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Hiromichi Kataura
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Center of Materials Science and Optoelectronics Engineering, and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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10
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Khalid A, Yi W, Yoo S, Abbas S, Si J, Hou X, Hou J. Single-chirality of single-walled carbon nanotubes (SWCNTs) through chromatography and its potential biological applications. NEW J CHEM 2023. [DOI: 10.1039/d2nj04056e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
Gel chromatography is used to separate single-chirality and selective-diameter SWCNTs. We also explore the use of photothermal therapy and biosensor applications based on single-chirality, selected-diameter, and unique geometric shape.
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Affiliation(s)
- Asif Khalid
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Wenhui Yi
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Sweejiang Yoo
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Shakeel Abbas
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Jinhai Si
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Xun Hou
- Key Laboratory for Information Photonic Technology of Shaanxi & Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronics Science and Engineering, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China
| | - Jin Hou
- Department of Pharmacology, School of Basic Medical Science, Xi’an Medical University, Xi’an, Shaanxi, 710021, China
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11
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Smith BN, Meikle H, Doherty JL, Lu S, Tutoni G, Becker ML, Therien MJ, Franklin AD. Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses. NANOSCALE 2022; 14:16845-16856. [PMID: 36331392 PMCID: PMC9719746 DOI: 10.1039/d2nr04206a] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Printed carbon nanotube thin-film transistors (CNT-TFTs) are candidates for flexible electronics with printability on a wide range of substrates. Among the layers comprising a CNT-TFT, the gate dielectric has proven most difficult to additively print owing to challenges in film uniformity, thickness, and post-processing requirements. Printed ionic dielectrics show promise for addressing these issues and yielding devices that operate at low voltages thanks to their high-capacitance electric double layers. However, the printing of ionic dielectrics in their various compositions is not well understood, nor is the impact of certain stresses on these materials. In this work, we studied three compositionally distinct ionic dielectrics in fully printed CNT-TFTs: the polar-fluorinated polymer elastomer PVDF-HFP; an ion gel consisting of triblock polymer PS-PMMA-PS and ionic liquid EMIM-TFSI; and crystalline nanocellulose (CNC) with a salt concentration of 0.05%. Although ion gel has been thoroughly studied, e-PVDF-HFP and CNC printing are relatively new and this study provides insights into their ink formulation, print processing, and performance as gate dielectrics. Using a consistent aerosol jet printing approach, each ionic dielectric was printed into similar CNT-TFTs, allowing for direct comparison through extensive characterization, including mechanical and electrical stress tests. The ionic dielectrics were found to have distinct operational dependencies based on their compositional and ionic attributes. Overall, the results reveal a number of trade-offs that must be managed when selecting a printable ionic dielectric, with CNC showing the strongest performance for low-voltage operation but the ion gel and elastomer exhibiting better stability under bias and mechanical stresses.
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Affiliation(s)
- Brittany N Smith
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Hope Meikle
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
- Department of Chemistry, Duke University, Durham, NC 27708, USA
| | - James L Doherty
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Shiheng Lu
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
| | - Gianna Tutoni
- Department of Chemistry, Duke University, Durham, NC 27708, USA
| | | | | | - Aaron D Franklin
- Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708, USA.
- Department of Chemistry, Duke University, Durham, NC 27708, USA
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12
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Franklin AD, Hersam MC, Wong HSP. Carbon nanotube transistors: Making electronics from molecules. Science 2022; 378:726-732. [DOI: 10.1126/science.abp8278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sensing applications. Recent progress in the materials, devices, and technologies related to carbon nanotube transistors is briefly reviewed. Emphasis is placed on the most broadly impactful advancements that have evolved from single-nanotube devices to implementations with aligned nanotubes and even nanotube thin films. There are obstacles that remain to be addressed, including material synthesis and processing control, device structure design and transport considerations, and further integration demonstrations with improved reproducibility and reliability; however, the integration of more than 10,000 devices in single functional chips has already been realized.
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Affiliation(s)
- Aaron D. Franklin
- Department of Electrical and Computer Engineering, Duke University, Durham, NC, USA
- Department of Chemistry, Duke University, Durham, NC, USA
| | - Mark C. Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, USA
- Department of Chemistry, Northwestern University, Evanston, IL, USA
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA
| | - H.-S. Philip Wong
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
- Stanford SystemX Alliance, Stanford University, Stanford, CA, USA
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13
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Zou J, Cai W, Zhang Q. Subthreshold Schottky-contacted carbon nanotube network film field-effect transistors for ultralow-power electronic applications. NANOTECHNOLOGY 2022; 33:505206. [PMID: 36130528 DOI: 10.1088/1361-6528/ac9392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 09/20/2022] [Indexed: 06/15/2023]
Abstract
Ultralow-power electronics is critical to wearable, portable, and implantable applications where the systems could only have access to very limited electrical power supply or even be self-powered. Here, we report on a type of Schottky barrier (SB) contacted single-walled carbon nanotube (SWCNT) network film field-effect-transistors (FETs) that are operated in the subthreshold region to achieve ultralow-power applications. The thin high-k gate dielectric and the overlap between the gate and the source electrodes offer highly efficient gate electrostatic control over the SWCNT channel and the SB at the source contact, resulting in steep subthreshold switching characteristics with a small subthreshold swing (∼67 mV dec-1), a large current on/off ratio (∼106), and a low off-state current (∼0.5 pA). Ap-channel metal-oxide-semiconductor inverter built with the subthreshold SB-SWCNT-FETs exhibits a well-defined logic functionality and small-signal amplification capability under a low supply voltage (∼0.5 V) and an ultralow power (∼0.05 pWμm-1). The low-voltage and deep subthreshold operations reported here could lay an essential foundation for high-performance and ultralow-power SWCNTs-based electronics.
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Affiliation(s)
- Jianping Zou
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Weifan Cai
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Qing Zhang
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
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14
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The Effect of Elution Speed Control on Purity of Separated Large-Diameter Single-Walled Carbon Nanotubes in Gel Chromatography. J IND ENG CHEM 2022. [DOI: 10.1016/j.jiec.2022.08.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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15
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Sun Y, Li P, Kauppinen EI, Sun DM, Ohno Y. Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks. RSC Adv 2022; 12:16291-16295. [PMID: 35733664 PMCID: PMC9157530 DOI: 10.1039/d2ra02088b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Accepted: 05/24/2022] [Indexed: 11/21/2022] Open
Abstract
Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 107–108 are realized for CNT TFTs with mobility of ∼500 cm2 V−1 s−1. We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs. A full comprehension about the key factors to achieve ultrahigh on/off ratio thin-film transistors using as-grown CNT networks has been provided, including residual surfactants, chemical doping and CNT diameter.![]()
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Affiliation(s)
- Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Pengpeng Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Esko I Kauppinen
- Department of Applied Physics, Aalto University School of Science PO Box 15100 FI-00076 Aalto Espoo Finland
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences 72 Wenhua Road Shenyang 110016 China .,School of Material Science and Engineering, University of Science and Technology of China 72 Wenhua Road Shenyang 110016 China
| | - Yutaka Ohno
- Department of Quantum Engineering, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
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16
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Wei X, Li S, Wang W, Zhang X, Zhou W, Xie S, Liu H. Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200054. [PMID: 35293698 PMCID: PMC9108629 DOI: 10.1002/advs.202200054] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Revised: 02/10/2022] [Indexed: 05/04/2023]
Abstract
Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.
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Affiliation(s)
- Xiaojun Wei
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Shilong Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Wenke Wang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Xiao Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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17
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Jin C, Cheng L, Feng G, Ye R, Lu ZH, Zhang R, Yu X. Adsorption of Transition-Metal Clusters on Graphene and N-Doped Graphene: A DFT Study. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:3694-3710. [PMID: 35285652 DOI: 10.1021/acs.langmuir.1c03187] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Using the dispersion-corrected density functional theory (DFT-D3) method, we systematically studied the adsorption of 15 kinds of transition-metal (TM) clusters on pristine graphene (Gr) and N-doped graphene (N-Gr). It has been found that TMn (n = 1-4) clusters adsorbed on the N-Gr surface are much stronger than those on the pristine Gr surface, while 3d series clusters present similar geometries on Gr and N-Gr surfaces. The most preferred sites of TMs migrate from hollow to bridge to the top site on the Gr surface along the d series in the periodic table, while the preferred sites of TMs migrate in a much more complex manner on the N-Gr surface. It has also been found that charge transfer decreases along the d series for adsorbed clusters on both surfaces, but adsorbed clusters present less charge transfer on the N-Gr surface than on the Gr surface. What is more interesting is that some TM (Tc, Ru, and Re) clusters change the growth mechanism from the three-dimensional (3D) growth mode on the Gr surface to the two-dimensional (2D) growth mode on the N-Gr surface. At last, it has been found that adsorbed clusters are more dispersed on the N-Gr surface than on the pristine Gr surface due to growth and average aggregation energies.
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Affiliation(s)
- Chengkai Jin
- Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, Institute of Applied Chemistry, College of Chemistry, Nanchang University, No. 999 Xuefu Road, Nanchang 330031, P. R. China
| | - Lihong Cheng
- Key Laboratory of Surface Engineering of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330031, P. R. China
| | - Gang Feng
- Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, Institute of Applied Chemistry, College of Chemistry, Nanchang University, No. 999 Xuefu Road, Nanchang 330031, P. R. China
| | - Runping Ye
- Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, Institute of Applied Chemistry, College of Chemistry, Nanchang University, No. 999 Xuefu Road, Nanchang 330031, P. R. China
| | - Zhang-Hui Lu
- Institute of Advanced Materials (IAM), College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, P. R. China
| | - Rongbin Zhang
- Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, Institute of Applied Chemistry, College of Chemistry, Nanchang University, No. 999 Xuefu Road, Nanchang 330031, P. R. China
| | - Xiaohu Yu
- Institute of Theoretical and Computational Chemistry, Shaanxi Key Laboratory of Catalysis, School of Chemical & Environment Sciences, Shaanxi University of Technology, Hanzhong 723000, P. R. China
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18
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Pham Ba VA, Pham Van Bach N, Nguyen Luong T, Nguyen KV. Semiconducting Carbon Nanotube-Based Nanodevices for Monitoring the Effects of Chlorphenamine on the Activities of Intracellular Ca 2+ Stores. JOURNAL OF ANALYTICAL METHODS IN CHEMISTRY 2022; 2022:9019262. [PMID: 35284149 PMCID: PMC8906990 DOI: 10.1155/2022/9019262] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Accepted: 02/04/2022] [Indexed: 06/14/2023]
Abstract
We report a flexible and noninvasive method based on field-effect transistors hybridizing semiconducting single-walled carbon nanotubes for monitoring the effects of histamine on Ca2+ release from the intracellular stores of a nonexcitable cell. These nanodevices allowed us to evaluate the real-time electrophysiological activities of HeLa cells under the stimulation of histamine via the recording of the conductance changes of the devices. These changes resulted from the binding of histamine to its receptor type 1 on the HeLa cell membrane. Moreover, the effects of chlorphenamine, an antihistamine, on the electrophysiological activities of a single HeLa cell were also evaluated, indicating that the pretreatment of the cell with chlorpheniramine decreased intracellular Ca2+ release. Significantly, we only utilized a single nanodevice to perform the measurements for multiple cells pretreated with various concentrations of chlorphenamine. This enabled the statistically meaningful analysis of drug effects on cells without errors from device variations. Obtained results indicated the novel advantages of our method such as real-time monitoring and quantitative capability. Our devices, therefore, can be efficient tools for biomedical applications such as electrophysiology research and drug screening.
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Affiliation(s)
- Viet Anh Pham Ba
- Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam
- Department of Environmental Toxicology and Monitoring, Hanoi University of Natural Resources and Environment, Hanoi, Vietnam
| | - Ngoc Pham Van Bach
- Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam
- Space Technology Institute, Vietnam Academy of Science and Technology, Hanoi, Vietnam
| | - Thien Nguyen Luong
- Space Technology Institute, Vietnam Academy of Science and Technology, Hanoi, Vietnam
| | - Khoa Viet Nguyen
- Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Hanoi, Vietnam
- Institute of Mechanics, Vietnam Academy of Science and Technology, Hanoi, Vietnam
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19
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Zou J, Zhang Q. Advances and Frontiers in Single-Walled Carbon Nanotube Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102860. [PMID: 34687177 PMCID: PMC8655197 DOI: 10.1002/advs.202102860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/21/2021] [Indexed: 06/13/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next-generation electronics in the more Moore era. Sub-10 nm SWCNT-field effect transistors (FETs) have been realized with several performances exceeding those of Si-based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in-depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low-power, energy-efficient device operations. State-of-the-art low-power SWCNT-based electronics and the key strategies to realize low-voltage and low-power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large-scale ICs integration for future SWCNT-based electronics are foregrounded.
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Affiliation(s)
- Jianping Zou
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Qing Zhang
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
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20
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Qian L, Xie Y, Zou M, Zhang J. Building a Bridge for Carbon Nanotubes from Nanoscale Structure to Macroscopic Application. J Am Chem Soc 2021; 143:18805-18819. [PMID: 34714049 DOI: 10.1021/jacs.1c08554] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
Through 30 years of research, researchers have gained a deep understanding of the synthesis, characteristics, and applications of carbon nanotubes (CNTs). However, up to now, there are still few industries using CNT as the leading material. The difficulty of CNTs to be applied in industry is the gap between the properties of CNT-based aggregates and those of a single carbon nanotube. Therefore, how to maintain the intrinsic properties of CNTs when they are assembled into aggregates is of great significance. Herein, we summarize and analyze the research status of CNT materials applied in different fields from proven techniques to potential industries, including energy storage, electronics, mechanical and other applications. For each application, the intrinsic properties of CNTs and the real performances of their aggregates are compared to figure out the key problems in CNT synthesis. Finally, we give an outlook for building a bridge for CNTs from nanoscale structure to macroscopic application, giving inspiration to researchers making efforts toward the real application of carbon nanotubes.
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Affiliation(s)
- Liu Qian
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Ying Xie
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Mingzhi Zou
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
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21
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Uchino T, Ayre GN, Smith DC, Hutchison JL, de Groot CH, Ashburn P. The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2481. [PMID: 34684921 PMCID: PMC8540963 DOI: 10.3390/nano11102481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Revised: 09/17/2021] [Accepted: 09/20/2021] [Indexed: 11/17/2022]
Abstract
We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.
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Affiliation(s)
- Takashi Uchino
- Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, Sendai 982-8577, Japan
| | - Greg N. Ayre
- School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, UK; (G.N.A.); (D.C.S.)
| | - David C. Smith
- School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, UK; (G.N.A.); (D.C.S.)
| | - John L. Hutchison
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK;
| | - C. H. de Groot
- School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK; (C.H.d.G.); (P.A.)
| | - Peter Ashburn
- School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK; (C.H.d.G.); (P.A.)
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22
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Song Y, Wang CK, Chen G, Zhang GP. A first-principles study of phthalocyanine-based multifunctional spintronic molecular devices. Phys Chem Chem Phys 2021; 23:18760-18769. [PMID: 34612414 DOI: 10.1039/d1cp01126j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
In this study, using the first-principles method, we theoretically investigated the spin-dependent transport properties of a phthalocyanine (Pc) molecule, which is sandwiched between two zigzag-edged graphene nanoribbon (zGNR) electrodes. Owing to the spatial symmetry of the Pc molecule and spin splitting of zGNRs around Fermi energy, perfect spin filtering behavior is observed in designed molecular junctions. Meanwhile, the spin of electrons allowed through the device is right opposite to the spin polarization of zGNR electrodes. Further studies show that the spin filtering performance can be largely modulated by insetting different transition metal atoms (TM = Mn or Cr) into the central Pc molecule, and changing the spin-polarized direction of the TM atom leads to the spin filtering direction inversion. More intriguingly, the antiparallel magnetic configuration of two zGNR electrodes gives rise to the control of the conducting channel by bias polarization, which eventually leads to remarkable spin rectifying and giant magnetoresistance behaviors in transition metal phthalocyanine (TMPc) molecular junctions. The corresponding mechanisms are revealed by an analysis of spin-resolved transmission spectra, molecular projected self-consistent Hamiltonian and a projected density of states. These results are helpful in the design of TMPc-based multifunctional spin molecular devices.
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Affiliation(s)
- Yang Song
- Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations, School of Physics and Electronics, Shandong Normal University, Jinan, 250358, China.
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23
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Yang X, Liu T, Li R, Yang X, Lyu M, Fang L, Zhang L, Wang K, Zhu A, Zhang L, Qiu C, Zhang YZ, Wang X, Peng LM, Yang F, Li Y. Host-Guest Molecular Interaction Enabled Separation of Large-Diameter Semiconducting Single-Walled Carbon Nanotubes. J Am Chem Soc 2021; 143:10120-10130. [PMID: 34105955 DOI: 10.1021/jacs.1c02245] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Semiconducting single-walled carbon nanotubes (s-SWCNTs) with a diameter of around 1.0-1.5 nm, which present bandgaps comparable to silicon, are highly desired for electronic applications. Therefore, the preparation of s-SWCNTs of such diameters has been attracting great attention. The inner surface of SWCNTs has a suitable curvature and large contacting area, which is attractive in host-guest chemistry triggered by electron transfer. Here we reported a strategy of host-guest molecular interaction between SWCNTs and inner clusters with designed size, thus selectively separating s-SWCNTs of expected diameters. When polyoxometalate clusters of ∼1 nm in size were filled in the inner cavities of SWCNTs, s-SWCNTs with diameters concentrated at ∼1.3-1.4 nm were selectively extracted with the purity of ∼98% by a commercially available polyfluorene derivative. The field-effect transistors built from the sorted s-SWCNTs showed a typical behavior of semiconductors. The sorting mechanisms associated with size-dependent electron transfer from nanotubes to inner polyoxometalate were revealed by the spectroscopic and in situ electron microscopic evidence as well as the theoretical calculation. The polyoxometalates with designable size and redox property enable the flexible regulation of interaction between the nanotubes and the clusters, thus tuning the diameter of sorted s-SWCNTs. The present sorting strategy is simple and should be generally feasible in other SWCNT sorting techniques, bringing both great easiness in dispersant design and improved selectivity.
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Affiliation(s)
- Xusheng Yang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Tianhui Liu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ruoming Li
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xiaoxin Yang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Min Lyu
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Li Fang
- Department of Electronics, Peking University, Beijing 100871, China
| | - Lei Zhang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kun Wang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Anquan Zhu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Luyao Zhang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Chenguang Qiu
- Department of Electronics, Peking University, Beijing 100871, China
| | - Yuan-Zhu Zhang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Lian-Mao Peng
- Department of Electronics, Peking University, Beijing 100871, China
| | - Feng Yang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yan Li
- Beijing National Laboratory for Molecular Science, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.,Peking University Shenzhen Institute, Shenzhen 518057, China.,PKU-HKUST ShenZhen-HongKong Institution, Shenzhen 518055, China
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24
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Hu Q, Cao Y, Liu Y, Wang Y, Wang C, Zhu JL, Yang N, Chu W, Ma W, Sun JL. Ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts. RSC Adv 2021; 11:19482-19491. [PMID: 35479257 PMCID: PMC9033575 DOI: 10.1039/d1ra03438c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2021] [Accepted: 05/19/2021] [Indexed: 12/28/2022] Open
Abstract
The ultraviolet to terahertz band forms the main focus of optoelectronics research, while light detection in different bands generally requires the use of different materials and processing methods. However, researchers are aiming to realize multi-band detection simultaneously in the same device in certain specific application scenarios and ultra-wideband photoelectric detectors can also realize multi-function and multi-system integration. Therefore, the research and development work on ultra-wideband photoelectric detectors has important practical application value. Here, we produced self-powered suspended Pd-reduced graphene oxide-Ti (Pd-rGO-Ti) photodetectors. We varied the properties of the rGO films by using different annealing temperatures and achieved p-doping and n-doping of the films by evaporating palladium films and titanium films, respectively, thus enabling preparation of photothermoelectric (PTE) photodetectors based on rGO films. The resulting detectors have excellent photoelectric responses over a wideband illumination wavelength range from 375 nm to 118.8 μm (2.52 THz). At the same time, we determined the best experimental conditions and device structure by varying the channel width, the laser spot irradiation position and the experimental atmospheric pressure. The maximum responsivity obtained from our detectors is 142.08 mV W−1, the response time is approximately 100–200 ms and the devices have high detection sensitivity. Based on this work, we assumed in the subsequent experiments that detectors with higher performance can be obtained by reducing the channel width and atmospheric pressure. With advantages that include simple fabrication, low cost, large-scale production potential and ultra-wideband responses, these Pd-rGO-Ti photodetectors have broad application prospects in high-performance integrated optoelectronics. An ultra-wideband self-powered photodetector based on suspended reduced graphene oxide with asymmetric metal contacts is reported.![]()
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Affiliation(s)
- Qianqian Hu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University Beijing 100084 P. R. China
| | - Yang Cao
- School of Instrumentation Science and Opto-electronics Engineering, Beijing Information Science & Technology University Beijing 100192 P. R. China.,National Engineering Laboratory for Dangerous Articles and Explosives Detection Technologies Beijing 100084 P. R. China
| | - Yu Liu
- School of Mechanical Engineering and Automation, Fuzhou University Fuzhou 350108 P. R. China
| | - Yingxin Wang
- Key Laboratory of Particle & Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University Beijing 100084 P. R. China
| | - Chenfeng Wang
- School of Instrumentation Science and Opto-electronics Engineering, Beijing Information Science & Technology University Beijing 100192 P. R. China
| | - Jia-Lin Zhu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University Beijing 100084 P. R. China
| | - Ning Yang
- Institute of Applied Physics and Computational Mathematics P.O.Box 8009 (28) Beijing 100088 P. R. China
| | - Weidong Chu
- Institute of Applied Physics and Computational Mathematics P.O.Box 8009 (28) Beijing 100088 P. R. China
| | - Wanyun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University Beijing 100084 P. R. China
| | - Jia-Lin Sun
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University Beijing 100084 P. R. China
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25
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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26
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Zheng Z, Zhang H, Zhai T, Xia F. Overcome Debye Length Limitations for Biomolecule Sensing Based on Field Effective Transistors
†. CHINESE J CHEM 2021. [DOI: 10.1002/cjoc.202000584] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Affiliation(s)
- Zhi Zheng
- Engineering Research Center of Nano‐Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan Hubei 430074 China
| | - Hongyuan Zhang
- Engineering Research Center of Nano‐Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan Hubei 430074 China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology Wuhan Hubei 430074 China
| | - Fan Xia
- Engineering Research Center of Nano‐Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences Wuhan Hubei 430074 China
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27
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Deminskyi P, Haider A, Eren H, Khan TM, Biyikli N. Area-selective atomic layer deposition of noble metals: Polymerized fluorocarbon layers as effective growth inhibitors. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A: VACUUM, SURFACES, AND FILMS 2021; 39. [DOI: 10.1116/6.0000701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
The increasingly complex nanoscale three-dimensional and multilayered structures utilized in nanoelectronic, catalytic, and energy conversion/storage devices necessitate novel substrate-selective material deposition approaches featuring bottom-up and self-aligned precision processing. Here, we demonstrate the area-selective atomic layer deposition (AS-ALD) of two noble metals, Pt and Pd, by using a plasma-polymerized fluorocarbon layer as growth inhibition surfaces. The contact angle, x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy measurements were performed to investigate the blocking ability of polymerized fluorocarbon (CFx) layers against ALD-grown metal films. Both Pt and Pd showed significant nucleation delays on fluorocarbon surfaces. Self-aligned film deposition is confirmed using this strategy by growing Pt and Pd on the microscale lithographically patterned CFx/Si samples. CFx blocking layer degradation during ozone exposure was analyzed using XPS measurements, which confirmed the oxygen physisorption as the main responsible surface reaction with further hydroxyl group formation on the CFx surface. Our work reveals that the CFx layer is compatible with an ozone coreactant until the blocking polymer cannot withstand oxygen physisorption. Our results could potentially be used to investigate and develop radical-assisted AS-ALD processes for a wider selection of materials.
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Affiliation(s)
- Petro Deminskyi
- UNAM—Institute of Materials Science and Nanotechnology, Bilkent University 1 , Ankara 06800, Turkey
| | - Ali Haider
- UNAM—Institute of Materials Science and Nanotechnology, Bilkent University 1 , Ankara 06800, Turkey
| | - Hamit Eren
- Department of Chemical Engineering, Delft University of Technology 2 , van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Talha M. Khan
- UNAM—Institute of Materials Science and Nanotechnology, Bilkent University 1 , Ankara 06800, Turkey
| | - Necmi Biyikli
- Department of Electrical and Computer Engineering, University of Connecticut 3 , 371 Fairfield Way, Storrs, Connecticut 06269-4157
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28
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Daneshvar F, Chen H, Noh K, Sue HJ. Critical challenges and advances in the carbon nanotube-metal interface for next-generation electronics. NANOSCALE ADVANCES 2021; 3:942-962. [PMID: 36133297 PMCID: PMC9417627 DOI: 10.1039/d0na00822b] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Accepted: 01/04/2021] [Indexed: 05/25/2023]
Abstract
Next-generation electronics can no longer solely rely on conventional materials; miniaturization of portable electronics is pushing Si-based semiconductors and metallic conductors to their operational limits, flexible displays will make common conductive metal oxide materials obsolete, and weight reduction requirement in the aerospace industry demands scientists to seek reliable low-density conductors. Excellent electrical and mechanical properties, coupled with low density, make carbon nanotubes (CNTs) attractive candidates for future electronics. However, translating these remarkable properties into commercial macroscale applications has been disappointing. To fully realize their great potential, CNTs need to be seamlessly incorporated into metallic structures or have to synergistically work alongside them which is still challenging. Here, we review the major challenges in CNT-metal systems that impede their application in electronic devices and highlight significant breakthroughs. A few key applications that can capitalize on CNT-metal structures are also discussed. We specifically focus on the interfacial interaction and materials science aspects of CNT-metal structures.
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Affiliation(s)
- Farhad Daneshvar
- Intel Ronler Acres Campus, Intel Corp. 2501 NE Century Blvd Hillsboro Oregon 97124 USA
- Polymer Technology Centre, Department of Materials Science and Engineering, Texas A&M University College Station Texas 77843 USA
| | - Hengxi Chen
- Polymer Technology Centre, Department of Materials Science and Engineering, Texas A&M University College Station Texas 77843 USA
| | - Kwanghae Noh
- Polymer Technology Centre, Department of Materials Science and Engineering, Texas A&M University College Station Texas 77843 USA
| | - Hung-Jue Sue
- Polymer Technology Centre, Department of Materials Science and Engineering, Texas A&M University College Station Texas 77843 USA
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29
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Chernev A, Marion S, Radenovic A. Prospects of Observing Ionic Coulomb Blockade in Artificial Ion Confinements. ENTROPY (BASEL, SWITZERLAND) 2020; 22:E1430. [PMID: 33353100 PMCID: PMC7766073 DOI: 10.3390/e22121430] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Revised: 12/11/2020] [Accepted: 12/11/2020] [Indexed: 12/18/2022]
Abstract
Nanofluidics encompasses a wide range of advanced approaches to study charge and mass transport at the nanoscale. Modern technologies allow us to develop and improve artificial nanofluidic platforms that confine ions in a way similar to single-ion channels in living cells. Therefore, nanofluidic platforms show great potential to act as a test field for theoretical models. This review aims to highlight ionic Coulomb blockade (ICB)-an effect that is proposed to be the key player of ion channel selectivity, which is based upon electrostatic exclusion limiting ion transport. Thus, in this perspective, we focus on the most promising approaches that have been reported on the subject. We consider ion confinements of various dimensionalities and highlight the most recent advancements in the field. Furthermore, we concentrate on the most critical obstacles associated with these studies and suggest possible solutions to advance the field further.
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Affiliation(s)
| | | | - Aleksandra Radenovic
- Laboratory of Nanoscale Biology, Institute of Bioengineering, School of Engineering, EPFL, 1015 Lausanne, Switzerland; (A.C.); (S.M.)
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30
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Wang J, Lei T. Separation of Semiconducting Carbon Nanotubes Using Conjugated Polymer Wrapping. Polymers (Basel) 2020; 12:E1548. [PMID: 32668780 PMCID: PMC7407812 DOI: 10.3390/polym12071548] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Revised: 07/06/2020] [Accepted: 07/09/2020] [Indexed: 11/16/2022] Open
Abstract
In the past two decades, single-walled carbon nanotubes (SWNTs) have been explored for electronic applications because of their high charge carrier mobility, low-temperature solution processability and mechanical flexibility. Semiconducting SWNTs (s-SWNTs) are also considered an alternative to traditional silicon-based semiconductors. However, large-scale, as-produced SWNTs have poor solubility, and they are mixtures of metallic SWNTs (m-SWNTs) and s-SWNTs, which limits their practical applications. Conjugated polymer wrapping is a promising method to disperse and separate s-SWNTs, due to its high selectivity, high separation yield and simplicity of operation. In this review, we summarize the recent progress of the conjugated polymer wrapping method, and discuss possible separation mechanisms for s-SWNTs. We also discuss various parameters that may affect the selectivity and sorting yield. Finally, some electronic applications of polymer-sorted s-SWNTs are introduced. The aim of this review is to provide polymer chemist a basic concept of polymer based SWNT separation, as well as some polymer design strategies, influential factors and potential applications.
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Affiliation(s)
| | - Ting Lei
- Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China;
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31
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Liu L, Han J, Xu L, Zhou J, Zhao C, Ding S, Shi H, Xiao M, Ding L, Ma Z, Jin C, Zhang Z, Peng LM. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics. Science 2020; 368:850-856. [DOI: 10.1126/science.aba5980] [Citation(s) in RCA: 167] [Impact Index Per Article: 41.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Accepted: 04/09/2020] [Indexed: 01/22/2023]
Affiliation(s)
- Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jie Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Chenyi Zhao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Sujuan Ding
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Huiwen Shi
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Ze Ma
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
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32
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Lakshmanan S, Kanwal A, Liu S, Patlolla A, Iqbal Z, Mitra S, Thomas GA, Fagan JA, Farrow RC. Improved Electrophoretic Deposition of Vertical Single Wall Carbon Nanotubes with Nanoscopic Electrostatic Lenses. MICROMACHINES 2020; 11:mi11030324. [PMID: 32245014 PMCID: PMC7143188 DOI: 10.3390/mi11030324] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2019] [Revised: 03/15/2020] [Accepted: 03/17/2020] [Indexed: 11/25/2022]
Abstract
Under certain conditions, electrophoretic deposition (EPD) of single-wall carbon nanotubes (SWCNTs) onto metal at the base of nanoscale insulating windows can result in a single SWCNT per window, bonded at one end to the metal. During EPD charge, buildup on the insulator creates electrostatic lenses at the windows that control the trajectory of the SWCNTs. The aim is to develop a reproducible process for deposition of individual vertically oriented SWCNTs into each window to enable novel devices. The length of the SWCNTs is shown to be the most critical parameter in achieving results that could be used for devices. In particular, single nanotube deposition in windows by EPD was achieved with SWCNTs with lengths on the order of the window depth. By performing current vs voltage (IV) measurements against a platinum wire in a phosphate buffer and by modeling the data, the presence of the nanotube can be detected, the contact interface can be studied, and the nanotube’s viability for device applications can be determined. These results provide a basis for process integration of vertical SWCNTs using EPD.
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Affiliation(s)
- Shanmugamurthy Lakshmanan
- Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (S.L.); (A.K.); (S.L.); (G.A.T.)
| | - Alokik Kanwal
- Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (S.L.); (A.K.); (S.L.); (G.A.T.)
| | - Sheng Liu
- Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (S.L.); (A.K.); (S.L.); (G.A.T.)
| | - Anitha Patlolla
- Department of Chemistry and Environment Science, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (A.P.); (Z.I.); (S.M.)
| | - Zafar Iqbal
- Department of Chemistry and Environment Science, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (A.P.); (Z.I.); (S.M.)
| | - Somenath Mitra
- Department of Chemistry and Environment Science, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (A.P.); (Z.I.); (S.M.)
| | - Gordon A. Thomas
- Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (S.L.); (A.K.); (S.L.); (G.A.T.)
| | - Jeffrey A. Fagan
- Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA;
| | - Reginald C. Farrow
- Department of Physics, New Jersey Institute of Technology, University Heights, Newark, NJ 07102, USA; (S.L.); (A.K.); (S.L.); (G.A.T.)
- Correspondence: ; Tel.: +1-973-596-2473
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33
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Li H, Gordeev G, Garrity O, Peyyety NA, Selvasundaram PB, Dehm S, Krupke R, Cambré S, Wenseleers W, Reich S, Zheng M, Fagan JA, Flavel BS. Separation of Specific Single-Enantiomer Single-Wall Carbon Nanotubes in the Large-Diameter Regime. ACS NANO 2020; 14:948-963. [PMID: 31742998 PMCID: PMC6994058 DOI: 10.1021/acsnano.9b08244] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2019] [Accepted: 11/19/2019] [Indexed: 05/06/2023]
Abstract
The enantiomer-level isolation of single-walled carbon nanotubes (SWCNTs) in high concentration and with high purity for nanotubes greater than 1.1 nm in diameter is demonstrated using a two-stage aqueous two-phase extraction (ATPE) technique. In total, five different nanotube species of ∼1.41 nm diameter are isolated, including both metallics and semiconductors. We characterize these populations by absorbance spectroscopy, circular dichroism spectroscopy, resonance Raman spectroscopy, and photoluminescence mapping, revealing and substantiating mod-dependent optical dependencies. Using knowledge of the competitive adsorption of surfactants to the SWCNTs that controls partitioning within the ATPE separation, we describe an advanced acid addition methodology that enables the fine control of the separation of these select nanotubes. Furthermore, we show that endohedral filling is a previously unrecognized but important factor to ensure a homogeneous starting material and further enhance the separation yield, with the best results for alkane-filled SWCNTs, followed by empty SWCNTs, with the intrinsic inhomogeneity of water-filled SWCNTs causing them to be worse for separations. Lastly, we demonstrate the potential use of these nanotubes in field-effect transistors.
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Affiliation(s)
- Han Li
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
| | - Georgy Gordeev
- Department
of Physics, Freie Universität Berlin, Berlin 14195, Germany
| | - Oisin Garrity
- Department
of Physics, Freie Universität Berlin, Berlin 14195, Germany
| | - Naga Anirudh Peyyety
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
- Institute
of Materials Science, Technische Universität
Darmstadt, Darmstadt 64287, Germany
| | - Pranauv Balaji Selvasundaram
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
- Institute
of Materials Science, Technische Universität
Darmstadt, Darmstadt 64287, Germany
| | - Simone Dehm
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
| | - Ralph Krupke
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
- Institute
of Materials Science, Technische Universität
Darmstadt, Darmstadt 64287, Germany
| | - Sofie Cambré
- Physics
Department, University of Antwerp, Antwerp 2020, Belgium
| | - Wim Wenseleers
- Physics
Department, University of Antwerp, Antwerp 2020, Belgium
| | - Stephanie Reich
- Department
of Physics, Freie Universität Berlin, Berlin 14195, Germany
| | - Ming Zheng
- Materials
Science and Engineering Division, National
Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Jeffrey A. Fagan
- Materials
Science and Engineering Division, National
Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Benjamin S. Flavel
- Institute
of Nanotechnology, Karlsruhe Institute of
Technology, Karlsruhe 76021, Germany
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34
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Tran TT, Clark K, Ma W, Mulchandani A. Detection of a secreted protein biomarker for citrus Huanglongbing using a single-walled carbon nanotubes-based chemiresistive biosensor. Biosens Bioelectron 2020; 147:111766. [DOI: 10.1016/j.bios.2019.111766] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2019] [Revised: 09/24/2019] [Accepted: 10/07/2019] [Indexed: 01/17/2023]
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35
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Zhang P, Yi W, Bai L, Tian Y, Hou J, Jin W, Si J, Hou X. Enrichment of large-diameter semiconducting single-walled carbon nanotubes by a mixed-extractor strategy. Chem Asian J 2019; 14:3855-3862. [PMID: 31496032 DOI: 10.1002/asia.201901035] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2019] [Revised: 08/27/2019] [Indexed: 01/18/2023]
Abstract
In this work, we report a new mixed-extractor strategy to improve the sorting yield of large-diameter semiconducting single-walled carbon nanotubes (s-SWCNTs) with high purity. In the new mixed-extractor strategy, two kinds of conjugated polymers with different rigidity, poly(9,9-n-dihexyl-2,7-fluorene-alt-9-phenyl-3,6-carbazole) (PDFP) and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (P8BT), are used to sort large-diameter s-SWCNTs through two simple sonication processes. To our surprise, although PDFP itself shows no selectivity toward s-SWCNTs, it can greatly enhance the sorting yield of P8BT. Using the PDFP/P8BT mixed-extractor method, the yield of sorted s-SWCNTs has been enhanced by 5 times with a purity above 99 % in comparison to that using P8BT single-extractor method. In addition, the photoluminescence (PL) excitation maps shows that the PDFP/P8BT mixed-extractor system not only enhances the sorting yield substantially, but also tends to be enrichment of (15,4) SWCNTs with the diameter of 1.36 nm.
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Affiliation(s)
- Ping Zhang
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Wenhui Yi
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Lei Bai
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Yilong Tian
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Jin Hou
- Department of Pharmacology, School of Basic Medical Sciences, Xi'an Medical University, No.1 Xinwang Road, Xi'an, 710021, P. R. China
| | - Weiqiu Jin
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Jinhai Si
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
| | - Xun Hou
- Key Laboratory for Information Photonic Technology of ShaanXi Province, School of Information and Electronics Engineering, &, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, No.28 Xianning West Road, Xi'an, 710049, P. R. China
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Moncea O, Casanova‐Chafer J, Poinsot D, Ochmann L, Mboyi CD, Nasrallah HO, Llobet E, Makni I, El Atrous M, Brandès S, Rousselin Y, Domenichini B, Nuns N, Fokin AA, Schreiner PR, Hierso J. Diamondoid Nanostructures as sp
3
‐Carbon‐Based Gas Sensors. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201903089] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Oana Moncea
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
- Institute of Organic ChemistryJustus Liebig University Heinrich-Buff-Ring 17 35392 Giessen Germany
- and Center for Materials Research (LaMa)Justus Liebig University Heinrich-Buff-Ring 16 35392 Giessen Germany
| | - Juan Casanova‐Chafer
- MINOS-EMaSUniversity Rovira i Virgili Avda. Països Catalans, 26 43007 Tarragona Spain
| | - Didier Poinsot
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Lukas Ochmann
- Institute of Organic ChemistryJustus Liebig University Heinrich-Buff-Ring 17 35392 Giessen Germany
- and Center for Materials Research (LaMa)Justus Liebig University Heinrich-Buff-Ring 16 35392 Giessen Germany
| | - Clève D. Mboyi
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Houssein O. Nasrallah
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Eduard Llobet
- MINOS-EMaSUniversity Rovira i Virgili Avda. Països Catalans, 26 43007 Tarragona Spain
| | - Imen Makni
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Molka El Atrous
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Stéphane Brandès
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Yoann Rousselin
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Bruno Domenichini
- Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR-CNRS 6303Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
| | - Nicolas Nuns
- Unité de Catalyse et de Chimie du Solide, UMR 8181Université Lille1 Sciences et Technologies Cité Scientifique, bâtiment C3 59655 Villeneuve d'Ascq France
| | - Andrey A. Fokin
- Institute of Organic ChemistryJustus Liebig University Heinrich-Buff-Ring 17 35392 Giessen Germany
- and Center for Materials Research (LaMa)Justus Liebig University Heinrich-Buff-Ring 16 35392 Giessen Germany
- Department of Organic ChemistryKiev Polytechnic Institute Pr. Pobedy 37 03056 Kiev Ukraine
| | - Peter R. Schreiner
- Institute of Organic ChemistryJustus Liebig University Heinrich-Buff-Ring 17 35392 Giessen Germany
- and Center for Materials Research (LaMa)Justus Liebig University Heinrich-Buff-Ring 16 35392 Giessen Germany
| | - Jean‐Cyrille Hierso
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302Université de Bourgogne Franche-Comté (UBFC) 9 avenue Alain Savary 21078 Dijon France
- Institut Universitaire de France (IUF) 103 Bd. Saint Michel 75005 Paris Cedex 5 France
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37
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Moncea O, Casanova-Chafer J, Poinsot D, Ochmann L, Mboyi CD, Nasrallah HO, Llobet E, Makni I, El Atrous M, Brandès S, Rousselin Y, Domenichini B, Nuns N, Fokin AA, Schreiner PR, Hierso JC. Diamondoid Nanostructures as sp 3 -Carbon-Based Gas Sensors. Angew Chem Int Ed Engl 2019; 58:9933-9938. [PMID: 31087744 DOI: 10.1002/anie.201903089] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2019] [Revised: 04/29/2019] [Indexed: 01/29/2023]
Abstract
Diamondoids, sp3 -hybridized nanometer-sized diamond-like hydrocarbons (nanodiamonds), difunctionalized with hydroxy and primary phosphine oxide groups, enable the assembly of the first sp3 -C-based chemical sensors by vapor deposition. Both pristine nanodiamonds and palladium nanolayered composites can be used to detect toxic NO2 and NH3 gases. This carbon-based gas sensor technology allows reversible NO2 detection down to 50 ppb and NH3 detection at 25-100 ppm concentration with fast response and recovery processes at 100 °C. Reversible gas adsorption and detection is compatible with 50 % humidity conditions. Semiconducting p-type sensing properties are achieved from devices based on primary phosphine-diamantanol, in which high specific area (ca. 140 m2 g-1 ) and channel nanoporosity derive from H-bonding.
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Affiliation(s)
- Oana Moncea
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France.,Institute of Organic Chemistry, Justus Liebig University, Heinrich-Buff-Ring 17, 35392, Giessen, Germany.,and Center for Materials Research (LaMa), Justus Liebig University, Heinrich-Buff-Ring 16, 35392, Giessen, Germany
| | - Juan Casanova-Chafer
- MINOS-EMaS, University Rovira i Virgili, Avda. Països Catalans, 26, 43007, Tarragona, Spain
| | - Didier Poinsot
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Lukas Ochmann
- Institute of Organic Chemistry, Justus Liebig University, Heinrich-Buff-Ring 17, 35392, Giessen, Germany.,and Center for Materials Research (LaMa), Justus Liebig University, Heinrich-Buff-Ring 16, 35392, Giessen, Germany
| | - Clève D Mboyi
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Houssein O Nasrallah
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Eduard Llobet
- MINOS-EMaS, University Rovira i Virgili, Avda. Països Catalans, 26, 43007, Tarragona, Spain
| | - Imen Makni
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Molka El Atrous
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Stéphane Brandès
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Yoann Rousselin
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Bruno Domenichini
- Laboratoire Interdisciplinaire Carnot de Bourgogne (ICB), UMR-CNRS 6303, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France
| | - Nicolas Nuns
- Unité de Catalyse et de Chimie du Solide, UMR 8181, Université Lille1 Sciences et Technologies, Cité Scientifique, bâtiment C3, 59655, Villeneuve d'Ascq, France
| | - Andrey A Fokin
- Institute of Organic Chemistry, Justus Liebig University, Heinrich-Buff-Ring 17, 35392, Giessen, Germany.,and Center for Materials Research (LaMa), Justus Liebig University, Heinrich-Buff-Ring 16, 35392, Giessen, Germany.,Department of Organic Chemistry, Kiev Polytechnic Institute, Pr. Pobedy 37, 03056, Kiev, Ukraine
| | - Peter R Schreiner
- Institute of Organic Chemistry, Justus Liebig University, Heinrich-Buff-Ring 17, 35392, Giessen, Germany.,and Center for Materials Research (LaMa), Justus Liebig University, Heinrich-Buff-Ring 16, 35392, Giessen, Germany
| | - Jean-Cyrille Hierso
- Institut de Chimie Moléculaire de l'Université de Bourgogne (ICMUB) UMR-CNRS 6302, Université de Bourgogne Franche-Comté (UBFC), 9 avenue Alain Savary, 21078, Dijon, France.,Institut Universitaire de France (IUF), 103 Bd. Saint Michel, 75005, Paris Cedex 5, France
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38
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Zhang Z, Cheng MQ, Chen Q, Wu HY, Hu W, Peng P, Huang GF, Huang WQ. Monolayer Phosphorene-Carbon Nanotube Heterostructures for Photocatalysis: Analysis by Density Functional Theory. NANOSCALE RESEARCH LETTERS 2019; 14:233. [PMID: 31300919 PMCID: PMC6626091 DOI: 10.1186/s11671-019-3066-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2019] [Accepted: 06/28/2019] [Indexed: 06/10/2023]
Abstract
One-dimensional (1D)/2D heterostructures have attracted great attention in electronic and optoelectronic fields because of their unique geometrical structures and rich physics. Here, we systematically explore electronic structure and optical performance of single-wall carbon nanotube (CNT)/phosphorene (BP) hybrids by large-scale density functional theory (DFT) computation. The results show that the interfacial interaction between CNT and BP is a weak van der Waals (vdW) force and correlates with tube diameter of CNTs. The CNT/BP hybrids have strong optical absorption compared with that of individual BP and CNT. A diameter-dependent type I or II heterojunction in CNT/BP hybrids is observed. Moreover, CNTs can not only significantly promote photogenerated carrier transfer, but also effectively improve the photocatalytic activities of BP as a co-catalyst. These findings would enrich our understanding of BP-based 1D/2D heterostructures, providing further insight into the design of highly efficient phosphorene-based or CNT-based nanophotocatalysts.
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Affiliation(s)
- Zhaogang Zhang
- College of Physics Science and Engineering Technology, Yichun University, Yichun, 336000 Jiangxi China
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
| | - Meng-Qi Cheng
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
| | - Qing Chen
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
| | - Hong-Yu Wu
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
| | - Wangyu Hu
- School of Materials Science and Engineering, Hunan University, Changsha, 410082 China
| | - Ping Peng
- School of Materials Science and Engineering, Hunan University, Changsha, 410082 China
| | - Gui-Fang Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
| | - Wei-Qing Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082 China
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39
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Barkauskas J, Mikoliunaite L, Paklonskaite I, Genys P, Petroniene JJ, Morkvenaite-Vilkonciene I, Ramanaviciene A, Samukaite-Bubniene U, Ramanavicius A. Single-walled carbon nanotube based coating modified with reduced graphene oxide for the design of amperometric biosensors. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2019; 98:515-523. [DOI: 10.1016/j.msec.2019.01.005] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2018] [Revised: 12/12/2018] [Accepted: 01/02/2019] [Indexed: 12/18/2022]
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40
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Danesh CD, Shaffer CM, Nathan D, Shenoy R, Tudor A, Tadayon M, Lin Y, Chen Y. Synaptic Resistors for Concurrent Inference and Learning with High Energy Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1808032. [PMID: 30908752 DOI: 10.1002/adma.201808032] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2018] [Revised: 03/03/2019] [Indexed: 06/09/2023]
Abstract
The fastest supercomputer, Summit, has a speed comparable to the human brain, but is much less energy-efficient (≈1010 FLOPS W-1 , floating point operations per second per watt) than the brain (≈1015 FLOPS W-1 ). The brain processes and learns from "big data" concurrently via trillions of synapses in parallel analog mode. By contrast, computers execute algorithms on physically separated logic and memory transistors in serial digital mode, which fundamentally restrains computers from handling "big data" efficiently. The existing electronic devices can perform inference with high speeds and energy efficiencies, but they still lack the synaptic functions to facilitate concurrent convolutional inference and correlative learning efficiently like the brain. In this work, synaptic resistors are reported to emulate the analog convolutional signal processing, correlative learning, and nonvolatile memory functions of synapses. By circumventing the fundamental limitations of computers, a synaptic resistor circuit performs speech inference and learning concurrently in parallel analog mode with an energy efficiency of ≈1.6 × 1017 FLOPS W-1 , which is about seven orders of magnitudes higher than that of the Summit supercomputer. Scaled-up synstor circuits could circumvent the fundamental limitations in computers, and facilitate real-time inference and learning from "big data" with high efficiency and speed in intelligent systems.
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Affiliation(s)
- Cameron D Danesh
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Christopher M Shaffer
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Dhruva Nathan
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Rahul Shenoy
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Andrew Tudor
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Macan Tadayon
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yvette Lin
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yong Chen
- Department of Mechanical and Aerospace Engineering, California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
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41
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Turek E, Kumanek B, Boncel S, Janas D. Manufacture of Networks from Large Diameter Single-Walled Carbon Nanotubes of Particular Electrical Character. NANOMATERIALS 2019; 9:nano9040614. [PMID: 31013971 PMCID: PMC6523666 DOI: 10.3390/nano9040614] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2019] [Revised: 04/10/2019] [Accepted: 04/12/2019] [Indexed: 02/02/2023]
Abstract
We have demonstrated that the aqueous two-phase extraction (ATPE) can differentiate between large diameter single-walled carbon nanotubes (CNTs) by electrical character. Introduction of "hydration modulators" to the ATPE machinery has enabled us to isolate metallic and semiconducting CNTs with ease. We have also shown that often there is a trade-off between the purity of the obtained fractions and the ability to separate both metallic and semiconducting CNTs at the same time. To isolate the separated CNTs from the matrices, we have proposed a method based on precipitation and hydrolysis, which can eliminate the need to use lengthy dialysis routines. In the final step, we prepared thin free-standing films from the sorted material and probed how electrical charge is transported through such macroscopic ensembles.
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Affiliation(s)
- Edyta Turek
- Department of Organic Chemistry, Bioorganic Chemistry and Biotechnology, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
| | - Bogumila Kumanek
- Department of Organic Chemistry, Bioorganic Chemistry and Biotechnology, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
| | - Slawomir Boncel
- Department of Organic Chemistry, Bioorganic Chemistry and Biotechnology, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
| | - Dawid Janas
- Department of Organic Chemistry, Bioorganic Chemistry and Biotechnology, Silesian University of Technology, B. Krzywoustego 4, 44-100 Gliwice, Poland.
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42
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Koo JH, Song JK, Kim DH. Solution-processed thin films of semiconducting carbon nanotubes and their application to soft electronics. NANOTECHNOLOGY 2019; 30:132001. [PMID: 30605897 DOI: 10.1088/1361-6528/aafbbe] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconducting single-walled carbon nanotube (SWNT) networks are promising for use as channel materials in field-effect transistors (FETs) in next-generation soft electronics, owing to their high intrinsic carrier mobility, mechanical flexibility, potential for low-cost production, and good processability. In this article, we review the recent progress related to carbon nanotube (CNT) devices in soft electronics by describing the materials and devices, processing methods, and example applications in soft electronic systems. First, solution-processed semiconducting SWNT deposition methods along with doping techniques used to achieve stable complementary metal-oxide-semiconductor devices are discussed. Various strategies for developing high-performance SWNT-based FETs, such as the proper material choices for the gates, dielectrics, and sources/drains of FETs, and methods of improving FET performance, such as hysteresis repression in SWNT-based FETs, are described next. These SWNT-based FETs have been used in flexible, stretchable, and wearable electronic devices to realize functionalities that could not be achieved using conventional silicon-based devices. We conclude this review by discussing the challenges faced by and outlook for CNT-based soft electronics.
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Affiliation(s)
- Ja Hoon Koo
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea. Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
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43
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PLA/Graphene/MWCNT Composites with Improved Electrical and Thermal Properties Suitable for FDM 3D Printing Applications. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9061209] [Citation(s) in RCA: 71] [Impact Index Per Article: 14.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
In this study, the structure, electrical and thermal properties of ten polymer compositions based on polylactic acid (PLA), low-cost industrial graphene nanoplates (GNP) and multi-walled carbon nanotubes (MWCNT) in mono-filler PLA/MWCNT and PLA/GNP systems with 0–6 wt.% filler content were investigated. Filler dispersion was further improved by combining these two carbon nanofillers with different geometric shapes and aspect ratios in hybrid bi-filler nanocomposites. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy exhibited uniform dispersion of nanoparticles in a polymer matrix. The obtained results have shown that for the mono-filler systems with MWCNT or GNP, the electrical conductivity increased with decades. Moreover, a small synergistic effect was observed in the GNP/MWCNT/PLA bi-filler hybrid composites when combining GNP and CNT at a ratio of 3% GNP/3% CNT and 1.5% GNP:4.5% CNT, showing higher electrical conductivity with respect to the systems incorporating individual CNTs and GNPs at the same overall filler concentration. This improvement was attributed to the interaction between CNTs and GNPs limiting GNP aggregation and bridging adjacent graphene platelets thus, forming a more efficient network. Thermal conductivity increases with higher filler content; this effect was more pronounced for the mono-filler composites based on PLA and GNP due to the ability of graphene to better transfer the heat. Morphological analysis carried out by electron microscopy (SEM, TEM) and Raman indicated that the nanocomposites present smaller and more homogeneous filler aggregates. The well-dispersed nanofillers also lead to a microstructure which is able to better enhance the electron and heat transfer and maximize the electrical and thermal properties. The obtained composites are suitable for the production of a multifunctional filament with improved electrical and thermal properties for different fused deposition modelling (FDM) 3D printing applications and also present a low production cost, which could potentially increase the competitiveness of this promising market niche.
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44
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Li M, Yang N, Wood V, Park HG. Characterization of contact resistances in ceramic-coated vertically aligned carbon nanotube arrays. RSC Adv 2019; 9:7266-7275. [PMID: 35548480 PMCID: PMC9087477 DOI: 10.1039/c8ra10519g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2018] [Accepted: 02/12/2019] [Indexed: 01/12/2023] Open
Abstract
Despite the technological significance of carbon nanotube (CNT) arrays and metal-oxide coated CNTs for electronic and electrochemical devices such as supercapacitors, lithium-ion batteries, and solar-chemical cells, sub-optimal device performance often results due to large contact resistance between the CNTs and the metallic current collectors or between the CNTs and their ceramic coatings. While contact resistance measurements are regularly carried out on individually contacted CNTs, contact resistance measurements on vertically aligned (VA) CNT arrays are not routine. Here, we demonstrate that two-probe electrical current-voltage measurements and electrochemical impedance spectroscopy can be used to probe the end contact resistance and side contact resistances of coated and uncoated VACNT arrays in order to optimize material deposition and selection.
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Affiliation(s)
- Meng Li
- Department of Mechanical and Process Engineering, ETH Zürich Zürich CH-8092 Switzerland
| | - Ning Yang
- Department of Mechanical and Process Engineering, ETH Zürich Zürich CH-8092 Switzerland
| | - Vanessa Wood
- Department of Information Technology and Electrical Engineering, ETH Zürich Zürich CH-8092 Switzerland
| | - Hyung Gyu Park
- Department of Mechanical and Process Engineering, ETH Zürich Zürich CH-8092 Switzerland
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45
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Wang T, Zhang J, Shao Q. Tiny nano-scale junction built on B/N doped single carbon nanotube. NANOTECHNOLOGY 2019; 30:075203. [PMID: 30523857 DOI: 10.1088/1361-6528/aaf3e5] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The characteristic sizes of carbon nanotube (CNT)-based devices are constantly being reduced. However, this continuing miniaturization is still facing many problems and requires innovative ideas and structures. By regular doping of boron and nitrogen atoms in a semiconducting single-wall carbon nanotube (SWCNT), we have constructed a nano-scale junction with rectifying characteristics. The I-V curve of our junction resembles the I-V curve of an ideal diode with a p-n junction. This junction channel is about 0.6 nm wide and 3.4 nm long, and the footprint is 5.1 nm long. Under a 0.5 V bias, the junction has a leakage current of -8.8 × 10-3 μA, a rectifying ratio Ion/Ioff of 0.716 × 103, and a current density of 10.52 mA μm-1. Our study also shows how different dopant distributions influence the I-V curve. Such a regular nano-scale doping method is effective and important, compared with the traditional random doping method.
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Affiliation(s)
- Tairan Wang
- Laboratory of Quantum Engineering and Quantum Materials, Guangdong Engineering Technology Research Center of Efficient Green Energy and Environmental Protection Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, People's Republic of China
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46
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Pitner G, Hills G, Llinas JP, Persson KM, Park R, Bokor J, Mitra S, Wong HSP. Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length. NANO LETTERS 2019; 19:1083-1089. [PMID: 30677297 DOI: 10.1021/acs.nanolett.8b04370] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Carbon nanotube field-effect transistors (CNFETs) promise to improve the energy efficiency, speed, and transistor density of very large scale integration circuits owing to the intrinsic thin channel body and excellent charge transport properties of carbon nanotubes. Low-temperature fabrication (e.g., <400 °C) is a key enabler for the monolithic three-dimensional (3D) integration of CNFET digital logic into a device technology platform that overcomes memory bandwidth bottlenecks for data-abundant applications such as big-data analytics and machine learning. However, high contact resistance for short CNFET contacts has been a major roadblock to establishing CNFETs as a viable technology because the contact resistance, in series with the channel resistance, reduces the on-state current of CNFETs. Additionally, the variation in contact resistance remains unstudied for short contacts and will further degrade the energy efficiency and speed of CNFET circuits. In this work, we investigate by experiments the contact resistance and statistical variation of room-temperature fabricated CNFET contacts down to 10 nm contact lengths. These CNFET contacts are ∼15 nm shorter than the state-of-the-art Si CMOS "7 nm node" contact length, allowing for multiple generations of future scaling of the transistor-contacted gate pitch. For the 10 nm contacts, we report contact resistance values down to 6.5 kΩ per source/drain contact for a single carbon nanotube (CNT) with a median contact resistance of 18.2 kΩ. The 10 nm contacts reduce the CNFET current by as little as 13% at VDS = 0.7 V compared with the best reported 200 nm contacts to date, corroborated by results in this work. Our analysis of RC from 232 single-CNT CNFETs between the long-contact (e.g., 200 nm) and short-contact (e.g., 10 nm) regimes quantifies the resistance variation and projects the impact on CNFET current variability versus the number of CNT in the transistor. The resistance distribution reveals contact-length-dependent RC variations become significant below 20 nm contact length. However, a larger source of CNFET resistance variation is apparent at all contact lengths used in this work. To further investigate the origins of this contact-length-independent resistance variation, we analyze the variation of RC in arrays of identical CNFETs along a single CNT of constant diameter and observe the random occurrence of high RC, even on correlated CNFETs.
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Affiliation(s)
| | | | - Juan Pablo Llinas
- Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
| | | | | | - Jeffrey Bokor
- Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States
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47
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An Overview of the Recent Progress in the Synthesis and Applications of Carbon Nanotubes. C — JOURNAL OF CARBON RESEARCH 2019. [DOI: 10.3390/c5010003] [Citation(s) in RCA: 40] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
Carbon nanotubes (CNTs) are known as nano-architectured allotropes of carbon, having graphene sheets that are wrapped forming a cylindrical shape. Rolling of graphene sheets in different ways makes CNTs either metals or narrow-band semiconductors. Over the years, researchers have devoted much attention to understanding the intriguing properties CNTs. They exhibit some unusual properties like a high degree of stiffness, a large length-to-diameter ratio, and exceptional resilience, and for this reason, they are used in a variety of applications. These properties can be manipulated by controlling the diameter, chirality, wall nature, and length of CNTs which are in turn, synthesis procedure-dependent. In this review article, various synthesis methods for the production of CNTs are thoroughly elaborated. Several characterization methods are also described in the paper. The applications of CNTs in various technologically important fields are discussed in detail. Finally, future prospects of CNTs are outlined in view of their commercial applications.
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48
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Rao R, Pint CL, Islam AE, Weatherup RS, Hofmann S, Meshot ER, Wu F, Zhou C, Dee N, Amama PB, Carpena-Nuñez J, Shi W, Plata DL, Penev ES, Yakobson BI, Balbuena PB, Bichara C, Futaba DN, Noda S, Shin H, Kim KS, Simard B, Mirri F, Pasquali M, Fornasiero F, Kauppinen EI, Arnold M, Cola BA, Nikolaev P, Arepalli S, Cheng HM, Zakharov DN, Stach EA, Zhang J, Wei F, Terrones M, Geohegan DB, Maruyama B, Maruyama S, Li Y, Adams WW, Hart AJ. Carbon Nanotubes and Related Nanomaterials: Critical Advances and Challenges for Synthesis toward Mainstream Commercial Applications. ACS NANO 2018; 12:11756-11784. [PMID: 30516055 DOI: 10.1021/acsnano.8b06511] [Citation(s) in RCA: 168] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Advances in the synthesis and scalable manufacturing of single-walled carbon nanotubes (SWCNTs) remain critical to realizing many important commercial applications. Here we review recent breakthroughs in the synthesis of SWCNTs and highlight key ongoing research areas and challenges. A few key applications that capitalize on the properties of SWCNTs are also reviewed with respect to the recent synthesis breakthroughs and ways in which synthesis science can enable advances in these applications. While the primary focus of this review is on the science framework of SWCNT growth, we draw connections to mechanisms underlying the synthesis of other 1D and 2D materials such as boron nitride nanotubes and graphene.
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Affiliation(s)
- Rahul Rao
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Cary L Pint
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 United States
| | - Ahmad E Islam
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Robert S Weatherup
- School of Chemistry , University of Manchester , Oxford Road , Manchester M13 9PL , U.K
- University of Manchester at Harwell, Diamond Light Source, Didcot , Oxfordshire OX11 0DE , U.K
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , Cambridge CB3 0FA , U.K
| | - Eric R Meshot
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Fanqi Wu
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Chongwu Zhou
- Ming-Hsieh Department of Electrical Engineering , University of Southern California , Los Angeles , California 90089 , United States
| | - Nicholas Dee
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Placidus B Amama
- Tim Taylor Department of Chemical Engineering , Kansas State University , Manhattan , Kansas 66506 , United States
| | - Jennifer Carpena-Nuñez
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Wenbo Shi
- Department of Chemical and Environmental Engineering , Yale University , New Haven , Connecticut 06520 , United States
| | - Desiree L Plata
- Department of Civil and Environmental Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Evgeni S Penev
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Perla B Balbuena
- Department of Chemical Engineering, Department of Materials Science and Engineering, Department of Chemistry , Texas A&M University , College Station , Texas 77843 , United States
| | - Christophe Bichara
- Aix-Marseille University and CNRS , CINaM UMR 7325 , 13288 Marseille , France
| | - Don N Futaba
- Nanotube Research Center , National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Suguru Noda
- Department of Applied Chemistry and Waseda Research Institute for Science and Engineering , Waseda University , 3-4-1 Okubo , Shinjuku-ku, Tokyo 169-8555 , Japan
| | - Homin Shin
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Keun Su Kim
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Benoit Simard
- Security and Disruptive Technologies Research Centre, Emerging Technologies Division , National Research Council Canada , Ottawa , Ontario K1A 0R6 , Canada
| | - Francesca Mirri
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Matteo Pasquali
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Francesco Fornasiero
- Physical and Life Sciences Directorate , Lawrence Livermore National Laboratory , Livermore , California 94550 United States
| | - Esko I Kauppinen
- Department of Applied Physics , Aalto University School of Science , P.O. Box 15100 , FI-00076 Espoo , Finland
| | - Michael Arnold
- Department of Materials Science and Engineering University of Wisconsin-Madison , Madison , Wisconsin 53706 , United States
| | - Baratunde A Cola
- George W. Woodruff School of Mechanical Engineering and School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Pavel Nikolaev
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
- UES Inc. , Dayton , Ohio 45433 , United States
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - Hui-Ming Cheng
- Tsinghua-Berkeley Shenzhen Institute , Tsinghua University , Shenzhen 518055 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Dmitri N Zakharov
- Center for Functional Nanomaterials , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Eric A Stach
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Jin Zhang
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering , Tsinghua University , Beijing 100084 , China
| | - Mauricio Terrones
- Department of Physics and Center for Two-Dimensional and Layered Materials , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Benji Maruyama
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright Patterson Air Force Base , Dayton , Ohio 45433 , United States
| | - Shigeo Maruyama
- Department of Mechanical Engineering , The University of Tokyo , 7-3-1 Hongo , Bunkyo-ku , Tokyo 113-8656 , Japan
| | - Yan Li
- College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , China
| | - W Wade Adams
- Department of Materials Science and NanoEngineering , Rice University , Houston , Texas 77005 , United States
| | - A John Hart
- Department of Mechanical Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
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49
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Bati ASR, Yu L, Batmunkh M, Shapter JG. Synthesis, purification, properties and characterization of sorted single-walled carbon nanotubes. NANOSCALE 2018; 10:22087-22139. [PMID: 30475354 DOI: 10.1039/c8nr07379a] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) have attracted significant attention due to their outstanding mechanical, chemical and optoelectronic properties, which makes them promising candidates for use in a wide range of applications. However, as-produced SWCNTs have a wide distribution of various chiral species with different properties (i.e. electronic structures). In order to take full advantage of SWCNT properties, highly purified and well-separated SWCNTs are of great importance. Recent advances have focused on developing new strategies to effectively separate nanotubes into single-chirality and/or semiconducting/metallic species and integrating them into different applications. This review highlights recent progress in this cutting-edge research area alongside the enormous development of their identification and structural characterization techniques. A comprehensive review of advances in both controlled synthesis and post-synthesis separation methods of SWCNTs are presented. The relationship between the unique structure of SWCNTs and their intrinsic properties is also discussed. Finally, important future directions for the development of sorting and purification protocols for SWCNTs are provided.
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Affiliation(s)
- Abdulaziz S R Bati
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Brisbane, Queensland 4072, Australia.
| | - LePing Yu
- College of Science and Engineering, Flinders University, Bedford Park, Adelaide, South Australia 5042, Australia
| | - Munkhbayar Batmunkh
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Brisbane, Queensland 4072, Australia. and College of Science and Engineering, Flinders University, Bedford Park, Adelaide, South Australia 5042, Australia
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Brisbane, Queensland 4072, Australia. and College of Science and Engineering, Flinders University, Bedford Park, Adelaide, South Australia 5042, Australia
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50
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Lau C, Srimani T, Bishop MD, Hills G, Shulaker MM. Tunable n-Type Doping of Carbon Nanotubes through Engineered Atomic Layer Deposition HfO X Films. ACS NANO 2018; 12:10924-10931. [PMID: 30285415 DOI: 10.1021/acsnano.8b04208] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Although digital systems fabricated from carbon-nanotube-based field-effect transistors (CNFETs) promise significant energy efficiency benefits, realizing these benefits requires a complementary CNFET technology, i.e., CNFET CMOS, comprising both PMOS and NMOS CNFETs. Furthermore, this CNFET CMOS process must be robust ( e.g., air-stable), tunable ( e.g., ability to control CNFET threshold voltages), and silicon CMOS compatible (to integrate within existing manufacturing facilities and process flows). Despite many efforts, such a silicon CMOS compatible CNT doping strategy for forming NMOS CNFETs does not exist. Techniques today are either not air-stable (using reactive low work function metals), not solid-state or silicon CMOS compatible (employing soluble molecular dopants in ionic solutions), or have not demonstrated precise control over the amount of doping (for setting threshold voltage, VT). Here, we demonstrate an electrostatic doping technique that meets all of these requirements. The key to our technique is leveraging atomic layer deposition (ALD) to encapsulate CNTs with nonstoichiometric oxides. We show that ALD allows for precise control of oxide stoichiometry, which translates to direct control of the amount of CNT doping. We experimentally demonstrate the ability to modulate the strength of the p-type conduction branch by >2500× (measured as the change in current at fixed bias), realize NMOS CNFETs with n-type conduction ∼500× stronger than p-type conduction (also measured by the relative current at fixed biases), and tune VT over a ∼1.5 V range. Moreover, our technique is compatible with other doping schemes; as an illustration, we combine electrostatic doping and low work function contact engineering to achieve CNFET CMOS with symmetric NMOS and PMOS ( i.e., CNFET ON-current for NMOS and PMOS is within 6% of each other). Thus, this work realizes a solid-state, air-table, very large scale integration and silicon CMOS compatible doping strategy, enabling integration of CNFET CMOS within standard fabrication processes today.
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Affiliation(s)
- Christian Lau
- Department of Electrical Engineering and Computer Sciences , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Tathagata Srimani
- Department of Electrical Engineering and Computer Sciences , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Mindy D Bishop
- Department of Electrical Engineering and Computer Sciences , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Gage Hills
- Department of Electrical Engineering and Computer Sciences , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
| | - Max M Shulaker
- Department of Electrical Engineering and Computer Sciences , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States
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