Sub-10 nm device fabrication in a transmission electron microscope

Time-domain event detection using single-instruction, multiple-thread gpGPU architectures in single-molecule biophysical data

Discrete amplitude levels in ordered, time-domain data often represent different underlying latent states of the system that is being interrogated. Analysis and feature extraction from these data sets generally require considering the order of each individual point; this approach cannot take advantage of contemporary general-purpose graphics processing units (gpGPU) and single-instruction multiple-data (SIMD) instruction set architectures. Two sources of such data from single-molecule biological measurements are nanopores and single-molecule field effect transistor (smFET) nanotube devices; both generate streams of time-ordered current or voltage data, typically sampled near 1 MS/s, with run times of minutes, yielding terabyte-scale datasets. Here, we present three gpGPU-based algorithms to overcome limitations associated with serial event detection in time series data, resulting in a 250× improvement in the rate with which we can detect salient features in nanopore and smFET datasets. The code is freely available.

Thermoelectric Limitations of Graphene Nanodevices at Ultrahigh Current Densities

Graphene is atomically thin, possesses excellent thermal conductivity, and is able to withstand high current densities, making it attractive for many nanoscale applications such as field-effect transistors, interconnects, and thermal management layers. Enabling integration of graphene into such devices requires nanostructuring, which can have a drastic impact on the self-heating properties, in particular at high current densities. Here, we use a combination of scanning thermal microscopy, finite element thermal analysis, and operando scanning transmission electron microscopy techniques to observe prototype graphene devices in operation and gain a deeper understanding of the role of geometry and interfaces during high current density operation. We find that Peltier effects significantly influence the operational limit due to local electrical and thermal interfacial effects, causing asymmetric temperature distribution in the device. Thus, our results indicate that a proper understanding and design of graphene devices must include consideration of the surrounding materials, interfaces, and geometry. Leveraging these aspects provides opportunities for engineered extreme operation devices.

Nano-injection molding with resin mold inserts for prototyping of nanofluidic devices for single molecular detection

While injection molding is becoming the fabrication modality of choice for high-scale production of microfluidic devices, especially those used for in vitro diagnostics, its translation into the growing area of nanofluidics (structures with at least one dimension <100 nm) has not been well established. Another prevailing issue with injection molding is the high startup costs and the relatively long time between device iterations making it in many cases impractical for device prototyping. We report, for the first time, functional nanofluidic devices with dimensions of critical structures below 30 nm fabricated by injection molding for the manipulation, identification, and detection of single molecules. UV-resin molds replicated from Si masters served as mold inserts, negating the need for generating Ni-mold inserts via electroplating. Using assembled devices with a cover plate via hybrid thermal fusion bonding, we demonstrated two functional thermoplastic nanofluidic devices. The first device consisted of dual in-plane nanopores placed at either end of a nanochannel and was used to detect and identify single ribonucleotide monophosphate molecules via resistive pulse sensing and obtain the effective mobility of the molecule through nanoscale electrophoresis to allow its identification. The second device demonstrated selective binding of a single RNA molecule to a solid phase bioreactor decorated with a processive exoribonuclease, XRN1. Our results provide a simple path towards the use of injection molding for device prototyping in the development stage of any nanofluidic or even microfluidic application, through which rapid scale-up is made possible by transitioning from prototyping to high throughput production using conventional Ni mold inserts.

The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication

The scanning transmission electron microscope, a workhorse instrument in materials characterization, is being transformed into an atomic-scale material-manipulation platform. With an eye on the trajectory of recent developments and the obstacles toward progress in this field, a vision for a path toward an expanded set of capabilities and applications is provided. The microscope is reconceptualized as an instrument for fabrication and synthesis with the capability to image and characterize atomic-scale structural formation as it occurs. Further development and refinement of this approach may have substantial impact on research in microelectronics, quantum information science, and catalysis, where precise control over atomic-scale structure and chemistry of a few "active sites" can have a dramatic impact on larger-scale functionality and where developing a better understanding of atomic-scale processes can help point the way to larger-scale synthesis approaches.

A Platform for Atomic Fabrication and In Situ Synthesis in a Scanning Transmission Electron Microscope

The engineering of quantum materials requires the development of tools able to address various synthesis and characterization challenges. These include the establishment and refinement of growth methods, material manipulation, and defect engineering. Atomic-scale modification will be a key enabling factor for engineering quantum materials where desired phenomena are critically determined by atomic structures. Successful use of scanning transmission electron microscopes (STEMs) for atomic scale material manipulation has opened the door for a transformed view of what can be accomplished using electron-beam-based strategies. However, serious obstacles exist on the pathway from possibility to practical reality. One such obstacle is the in situ delivery of atomized material in the STEM to the region of interest for further fabrication processes. Here, progress on this front is presented with a view toward performing synthesis (deposition and growth) processes in a scanning transmission electron microscope in combination with top-down control over the reaction region. An in situ thermal deposition platform is presented, tested, and deposition and growth processes are demonstrated. In particular, it is shown that isolated Sn atoms can be evaporated from a filament and caught on the nearby sample, demonstrating atomized material delivery. This platform is envisioned to facilitate real-time atomic resolution imaging of growth processes and open new pathways toward atomic fabrication.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Realizing pure spin current by the photogalvanic effect in armchair graphene nanoribbons with nano-constriction engineering

We propose nano-constriction engineering of armchair graphene nanoribbons (AGNRs) to construct photoelectric nanodevices aiming to generate pure spin currents through the photogalvanic effect (PGE) using first-principles calculations. Two devices with different symmetries were designed, one by introducing only one isosceles zigzag triangle defect on the lower edge of the central region ('D1') and the other by two symmetrically distributed isosceles zigzag triangle defects on the two edges ('D2'). The results show that pure spin current without accompanying charge current can be generated in both junctions, but with a big difference that pure spin current can be generated only at special polarization angles θ = 0°, 90° and 180° in device D1, while it can be generated at any polarization angle in D2. The robustness in D2 is attributed to the spatial inversion symmetry in geometry and the inversion antisymmetry of spin density. These findings suggest that local magnetism engineering provides a reliable method for generating robust pure spin currents with the PGE in nonmagnetic systems, especially opening up new possibilities for the application of AGNRs in spintronics.

Silicon Nitride Nanopores Formed by Simple Chemical Etching: DNA Translocations and TEM Imaging

We demonstrate DNA translocations through silicon nitride pores formed by simple chemical etching on glass substrates using microscopic amounts of hydrofluoric acid. DNA translocations and transmission electron microscopy (TEM) prove the fabrication of nanopores and allow their characterization. From ionic measurements on 318 chips, we report the effective pore diameters ranging from zero (pristine membranes) and sub-nm to over 100 nm, within 50 μm diameter membranes. The combination of ionic conductance, DNA current blockades, TEM imaging, and electron energy loss spectroscopy (EELS) provides comprehensive information about the pore area and number, from single to few pores, and pore structure. We also show the formation of thinned membrane regions as precursors of pores. The average pore density, about 5 × 10^-4 pores/μm², allows pore number adjustment statistically (0, 1, or more). This simple and affordable chemical method for making solid-state nanopores accelerates their adoption for DNA sensing and characterization applications.

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

A Parabola-like Gold Nanobowtie on a Sapphire Substrate as a Nano-Cavity

Plasmonic, metallic nanostructures have attracted much interest for their ability to manipulate light on a subwavelength scale and for their related applications in various fields. In this work, a parabola-like gold nanobowtie (PGNB) on a sapphire substrate was designed as a nano-cavity for confining light waves in a nanoscale gap region. The near-field optical properties of the innovative PGNB structure were studied comprehensively, taking advantage of the time-resolved field calculation based on a finite-difference time-domain algorithm (FDTD). The calculation result showed that the resonance wavelength of the nano-cavity was quite sensitive to the geometry of the PGNB. The values that related to the scattering and absorption properties of the PGNB, such as the scattering cross section, absorption cross section, extinction cross section, scattering ratio, and also the absorption ratio, were strongly dependent on the geometrical parameters which affected the surface area of the nanobowtie. Increased sharpness of the gold tips on the parabola-like nano-wings benefited the concentration of high-density charges with opposite electric properties in the narrow gold tips with limited volume, thus, resulting in a highly enhanced electric field in the nano-cavity under illumination of the light wave. Reduction of the gap size between the two gold nano-tips, namely, the size of the nano-cavity, decreased the distance that the electric potential produced by the highly concentrated charges on the surface of each gold nano-tip had to jump across, therefore, causing a significantly enhanced field in the nano-cavity. Further, alignment of the linearly polarized electric field of the incident light wave with the symmetric axis of the PGNB efficiently enabled the free electrons in the PGNB to concentrate on the surface of the sharp gold tips with a high density, thus, strongly improving the field across the nano-cavity. The research provides a new insight for future design, nanofabrication, and characterization of PGNBs for applications in devices that relate to enhancing photons emission, improving efficiency for energy harvesting, and improving sensitivity for infrared detection.

Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level

Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

Solid-state and polymer nanopores for protein sensing: A review

In two decades, the solid state and polymer nanopores became attractive method for the protein sensing with high specificity and sensitivity. They also allow the characterization of conformational changes, unfolding, assembly and aggregation as well the following of enzymatic reaction. This review aims to provide an overview of the protein sensing regarding the technique of detection: the resistive pulse and ionic diodes. For each strategy, we report the most significant achievement regarding the detection of peptides and protein as well as the conformational change, protein-protein assembly and aggregation process. We discuss the limitations and the recent strategies to improve the nanopore resolution and accuracy. A focus is done about concomitant problematic such as protein adsorption and nanopore lifetime.

Devices for Nanoscale Guiding of DNA through a 2D Nanopore

We fabricate on-chip solid-state nanofluidic-2D nanopore systems that can limit the range of motion for DNA in the sensing region of a nanopore. We do so by creating devices containing one or more silicon nitride pores and silicon nitride pillars supporting a 2D pore that orient DNA within a nanopore device to a restricted geometry, yet allow the free motion of ions to maintain a high signal-to-noise ratio. We discuss two concepts with two and three independent electrical connections and corresponding nanopore chip device architectures to achieve this goal in practice. Here, we describe device fabrication and transmission electron microscope (TEM) images, and provide simulated translocations based on the finite element analysis in 3D to demonstrate its merit. In both methods, there is a main 2D nanopore which we refer to as a "sensing" nanopore (monolayer MoS₂ in this paper). A secondary layer is either an array of guiding pores sharing the same electrode pair as the sensing pore (Method 1) or a single, independently contacted, guiding pore (Method 2). These pores are constructed parallel to the "sensing" pore and serve as "guiding" elements to stretch and feed DNA into the atomically thin sensing pore. We discuss the practical implementation of these concepts with nanofluidic and Si-based technology, including detailed fabrication steps and challenges involved for DNA applications in solution.

Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation

Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.

Computer vision AC-STEM automated image analysis for 2D nanopore applications

Transmission electron microscopy (TEM) has led to important discoveries in atomic imaging and as an atom-by-atom fabrication tool. Using electron beams, atomic structures can be patterned, annealed and crystallized, and nanopores can be drilled in thin membranes. We review current progress in TEM analysis and implement a computer vision nanopore-detection algorithm that achieves a 96% pixelwise precision in TEM images of nanopores in 2D membranes (WS₂), and discuss parameter optimization including a variation on the traditional grid search and gradient ascent. Such nanopores have applications in ion detection, water filtration, and DNA sequencing, where ionic conductance through the pore should be concordant with its TEM-measured size. Standard computer vision methods have their advantages as they are intuitive and do not require extensive training data. For completeness, we briefly comment on related machine learning for 2D materials analysis and discuss relevant progress in these fields. Image analysis alongside TEM allows correlated fabrication and analysis done simultaneously in situ to engineer devices at the atomic scale.

Periodic arrays of plasmonic crossed-bowtie nanostructures interspaced with plasmonic nanocrosses for highly sensitive LSPR based chemical and biological sensing

In this paper, we present novel localized surface plasmon resonance (LSPR) sensors based on periodic arrays of gold crossed-bowtie nanostructures interspaced with gold nanocross pillars. Finite difference time domain (FDTD) numerical simulations were carried out to model bulk sensors as well as localized sensors based on the plasmonic nanostructures being proposed. The geometrical parameters of the plasmonic nanostructures are varied to obtain the best possible sensing performance in terms of sensitivity and figure of merit. A very high bulk sensitivity of 1753 nm per unit change in refractive index (nm RIU-1), with a figure of merit for bulk sensing (FOMbulk) of 3.65 RIU-1, is obtained for these plasmonic nanostructures. This value of bulk sensitivity is higher in comparison to previously proposed LSPR sensors based on plasmonic nanopillars and nanocrosses. Moreover, the optimized LSPR sensors being proposed in this paper provide maximum sensitivity of localized refractive index sensing of 70 nm/nm with a FOMlocalized of 0.33 nm-1. This sensitivity of localized refractive index sensing is the highest reported thus far in comparison with previously reported LSPR sensors. It is also demonstrated that the operating resonance wavelengths of these LSPR sensors can be controllably tuned for specific applications by changing the dimensions of the plasmonic nanostructures.

Detection of single analyte and environmental samples with silicon nitride nanopores: Antarctic dirt particulates and DNA in artificial seawater

Nanopore sensing is a powerful tool for the detection of biomolecules. Solid-state nanopores act as single-molecule sensors that can function in harsh conditions. Their resilient nature makes them attractive candidates for taking this technology into the field to measure environmental samples for life detection in space and water quality monitoring. Here, we discuss the fabrication of silicon nitride pores from ∼1.6 to 20 nm in diameter in 20-nm-thick silicon nitride membranes suspended on glass chips and their performance. We detect pure laboratory samples containing a single analyte including DNA, BSA, microRNA, TAT, and poly-D-lys-hydrobromide. We also measured an environmental (mixed-analyte) sample, containing Antarctic dirt provided by NASA Ames. For DNA measurements, in addition to using KCl and NaCl solutions, we used the artificial (synthetic) seawater, which is a mixture of different salts mimicking the composition of natural seawater. These samples were spiked with double-stranded DNA (dsDNA) fragments at different concentrations to establish the limits of nanopore sensitivity in candidate environment conditions. Nanopore chips were cleaned and reused for successive measurements. A stand-alone, 1-MHz-bandwidth Chimera amplifier was used to determine the DNA concentration in artificial seawater that we can detect in a practical time scale of a few minutes. We also designed and developed a new compact nanopore reader, a portable read-out device with miniaturized fluidic cells, which can obtain translocation data at bandwidths up to 100 kHz. Using this new instrument, we record translocations of 400 bp, 1000 bp, and 15000 bp dsDNA fragments and show discrimination by analysis of current amplitude and event duration histograms.

Atomistic manipulation of reversible oxidation and reduction in Ag with an electron beam

Employing electrons for direct control of a nanoscale reaction is highly desirable since it enables fabrication of nanostructures with different properties at atomic resolution and with flexibility of dimensions and location. Here, applying in situ transmission electron microscopy, we show the reversible oxidation and reduction kinetics in Ag, well controlled by changing the dose rate of the electron beam. Aberration-corrected high-resolution transmission electron microscopy observation reveals that O atoms are preferably inserted and extracted along the {111} close-packed planes of Ag, leading to the nucleation and decomposition of nanoscale Ag2O islands on the Ag substrate. By controlling the electron beam size and dose rate, we demonstrated the fabrication of an array of 3 nm Ag2O nanodots in an Ag matrix. Our results open a new pathway to manipulate an atomistic reaction with an electron beam towards the precise fabrication of nanostructures for device applications.

Sub-5 nm Metal Nanogaps: Physical Properties, Fabrication Methods, and Device Applications

Sub-5 nm metal nanogaps have attracted widespread attention in physics, chemistry, material sciences, and biology due to their physical properties, including great plasmon-enhanced effects in light-matter interactions and charge tunneling, Coulomb blockade, and the Kondo effect under an electrical stimulus. These properties especially meet the needs of many cutting-edge devices, such as sensing, optical, molecular, and electronic devices. However, fabricating sub-5 nm nanogaps is still challenging at the present, and scaled and reliable fabrication, improved addressability, and multifunction integration are desired for further applications in commercial devices. The aim of this work is to provide a comprehensive overview of sub-5 nm nanogaps and to present recent advancements in metal nanogaps, including their physical properties, fabrication methods, and device applications, with the ultimate aim to further inspire scientists and engineers in their research.

Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

Electron beams (e-beams) have been applied as detecting probes and clean energy sources in many applications. In this work, we investigated several approaches for measurement and estimation of the range and distribution of local temperatures on a subject surface under irradiation of nano-microscale e-beams. We showed that a high-intensity e-beam with current density of 105-6 A/cm2 could result in vaporization of solid Si and Au materials in seconds, with a local surface temperature higher than 3000 K. With a lower beam intensity to 103-4 A/cm2, e-beams could introduce local surface temperature in the range of 1000-2000 K shortly, causing local melting in metallic nanowires and Cr, Pt, and Pd thin films, and phase transition in metallic Mg-B films. We demonstrated that thin film thermocouples on a freestanding Si3N4 window were capable of detecting peaked local surface temperatures up to 2000 K and stable, and temperatures in a lower range with a high precision. We discussed the distribution of surface temperatures under e-beams, thermal dissipation of thick substrate, and a small converting ratio from the high kinetic energy of e-beam to the surface heat. The results may offer some clues for novel applications of e-beams.

Anomalous Shape Evolution of Ag2O2 Nanocrystals Modulated by Surface Adsorbates during Electron Beam Etching

An understanding of nanocrystal shape evolution is significant for the design, synthesis, and applications of nanocrystals with surface-enhanced properties such as catalysis or plasmonics. Surface adsorbates that are selectively attached to certain facets may strongly affect the atomic pathways of nanocrystal shape development. However, it is a great challenge to directly observe such dynamic processes in situ with a high spatial resolution. Here, we report the anomalous shape evolution of Ag₂O₂ nanocrystals modulated by the surface adsorbates of Ag clusters during electron beam etching, which is revealed through in situ transmission electron microscopy (TEM). In contrast to the Ag₂O₂ nanocrystals without adsorbates, which display the near-equilibrium shape throughout the etching process, Ag₂O₂ nanocrystals with Ag surface adsorbates show distinct facet development during etching by electron beam irradiation. Three stages of shape changes are observed: a sphere-to-a cube transformation, side etching of a cuboid, and bottom etching underneath the surface adsorbates. We find that the Ag adsorbates modify the Ag₂O₂ nanocrystal surface configuration by selectively capping the junction between two neighboring facets. They prevent the edge atoms from being etched away and block the diffusion path of surface atoms. Our findings provide critical insights into the modulatory function of surface adsorbates on the shape control of nanocrystals.

Scalable fabrication of sub-10 nm polymer nanopores for DNA analysis

We present the first fabrication of sub-10 nm nanopores in freestanding polymer membranes via a simple, cost-effective, high-throughput but deterministic fabrication method. Nanopores in the range of 10 nm were initially produced via a single-step nanoimprinting process, which was further reduced to sub-10 nm pores via a post-NIL polymer reflow process. The low shrinkage rate of 2.7 nm/min obtained under the conditions used for the reflow process was the key to achieving sub-10 nm pores with a controllable pore size. The fabricated SU-8 nanopore membranes were successfully employed for transient current measurements during the translocation of DNA molecules through the nanopores.

Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials

We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO₂) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO₂ film inside or around the nanoantennas, as the VO₂ film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

Electron Beam Etching of CaO Crystals Observed Atom by Atom

With the rapid development of nanoscale structuring technology, the precision in the etching reaches the sub-10 nm scale today. However, with the ongoing development of nanofabrication the etching mechanisms with atomic precision still have to be understood in detail and improved. Here we observe, atom by atom, how preferential facets form in CaO crystals that are etched by an electron beam in an in situ high-resolution transmission electron microscope (HRTEM). An etching mechanism under electron beam irradiation is observed that is surprisingly similar to chemical etching and results in the formation of nanofacets. The observations also explain the dynamics of surface roughening. Our findings show how electron beam etching technology can be developed to ultimately realize tailoring of the facets of various crystalline materials with atomic precision.

Robust Molecular Anchoring to Graphene Electrodes

Recent advances in the engineering of picoscale gaps between electroburnt graphene electrodes provide new opportunities for studying electron transport through electrostatically gated single molecules. But first we need to understand and develop strategies for anchoring single molecules to such electrodes. Here, for the first time we present a systematic theoretical study of transport properties using four different modes of anchoring zinc-porphyrin monomer, dimer, and trimer molecular wires to graphene electrodes. These involve either amine anchor groups, covalent C-C bonds to the edges of the graphene, or coupling via π-π stacking of planar polyaromatic hydrocarbons formed from pyrene or tetrabenzofluorene (TBF). π-π stacked pyrene anchors are particularly stable, which may be advantageous for forming robust single-molecule transistors. Despite their planar, multiatom coupling to the electrodes, pyrene anchors can exhibit both destructive interference and different degrees of constructive interference, depending on their connectivity to the porphyrin wire, which makes them attractive also for thermoelectricity. TBF anchors are more weakly coupled to both the graphene and the porphyrin wires and induce negative differential conductance at finite source-drain voltages. Furthermore, although direct C-C covalent bonding to the edges of graphene electrodes yields the highest electrical conductance, electron transport is significantly affected by the shape and size of the graphene electrodes because the local density of states at the carbon atoms connecting the electrode edges to the molecule is sensitive to the electrode surface shape. This sensitivity suggests that direct C-C bonding may be the most desirable for sensing applications. The ordering of the low-bias electrical conductances with different anchors is as follows: direct C-C coupling > π-π stacking with the pyrene anchors > direct coupling via amine anchors > π-π stacking with TBF anchors. Despite this dependency of conductances on the mode of anchoring, the decay of conductance with the length of the zinc-porphyrin wires is relatively insensitive with the associated attenuation factor β lying between 0.9 and 0.11 Å^-1.

Atomic structure and formation mechanism of sub-nanometer pores in 2D monolayer MoS2

We use electron-beam nanofabrication to create sub-nanometer (sub-nm) pores in 2D monolayer MoS₂ with fine control over the pore size down to 0.6 nm, corresponding to the loss of a single Mo atom and surrounding S atoms. The sub-nm pores are created in situ with 1 nm spatial precision in the MoS₂ lattice by control of the angstrom sized probe in an aberration corrected scanning transmission electron microscope with real time tracking of the pore creation. Dynamics of the sub-nm pore creation are captured at the atomic scale and reveal the mechanism of nanopore formation at accelerating voltages of 60 and 80 kV to be due to displacing a Mo atom from the lattice site onto the surface of the MoS₂. This process is enabled by the destabilization of the Mo bonding from localized electron beam induced S atom loss. DFT calculations confirm the energetic advantage of having the ejected Mo atom attach on the sheet surface rather than being expelled into vacuum, and indicate sensitivity of the nanopore potential as a function of the adsorption position of the ejected Mo atom. These results provide detailed atomic level insights into the initial process of single Mo loss that underpins the nucleation of a nanopore and explains the formation mechanism of sub-nm pores in MoS₂.

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.

Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

Raman Shifts in Electron-Irradiated Monolayer MoS2

We report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a red-shift in the E' Raman peak and a less pronounced blue-shift in the A'1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy and selected-area electron diffraction, we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %). This allows us to quantitatively correlate the frequency shifts with vacancy concentration, as rationalized by first-principles density functional theory calculations. In situ device current measurements show an exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.

Near-UV-enhanced broad-band large third-order optical nonlinearity in aluminum nanorod array film with sub-10 nm gaps

Plasmonic nanostructures with sub-10 nm gaps possess intense electric field enhancements, leading to their high reputation for exploring various functional applications at nanoscale. Till now, although large amounts of efforts have been devoted into investigation of such structures, few works were emphased on the nonlinear optical properties in near-ultraviolet (UV) region. Here, by combining sputtering technique and an optimized anodic aluminum oxide (AAO) template growing method, we obtain aluminum (Al) nanorod array film (NRAF) with average rod diameter and gap size of 50 and 7 nm, respectively. The Al-NRAF exhibits large third-order optical nonlinear susceptibility (χ⁽³⁾) and high figure of merit (χ⁽³⁾/α) over a broad wavelength range from 360 to 900 nm, and reaches their maximums at the shortest measured wavelength. In addition, comparisons with Au-NRAF and Ag-NRAF samples further confirm that Al-NRAF has better nonlinear optical properties in the blue and near-UV wavelength regions. These results indicate that Al nanostructures are promising candidates for nonlinear plasmonic applications at blue and near-UV wavelengths.

Nanogap Electrodes towards Solid State Single-Molecule Transistors

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits.

Plane wave scattering from a plasmonic nanowire-film system with the inclusion of non-local effects

In this paper we present a theoretical analysis of the electromagnetic response of a plasmonic nanowire-film system. The analytical solution accounts for both the dispersive as well as non-local nature of the plasmonic media. The physical structure comprises of a plasmonic nanowire made of a plasmonic metal such as gold or silver placed over a plasmonic film of the same material. Such a nanostructure exhibits a spectrum that is extremely sensitive to various geometric parameters such as spacer thickness and nanowire radius, which makes it favorable for various sensing applications. The non-locality of the plasmonic medium, which can be captured using the hydrodynamic model, significantly affects the resonant wavelength of this system for structures of small dimensions (~ less than 5 nm gap between the nanowire and the film). We present an analytical method that can be used to predict the effect of non-locality on the resonances of the system. To validate the analytical method, we also report a comparison of our analytical solution with a numerical Finite Difference Time Domain analysis (FDTD) of the same structure with the plasmonic medium being treated as local in nature.

Electrophoretic Transport of Single DNA Nucleotides through Nanoslits: A Molecular Dynamics Simulation Study

There is potential for flight time based DNA sequencing involving disassembly into individual nucleotides which would pass through a nanochannel with two or more detectors. We performed molecular dynamics simulations of electrophoretic motion of single DNA nucleotides through 3 nm wide hydrophobic slits with both smooth and rough walls. The electric field (E) varied from 0.0 to 0.6 V/nm. The nucleotides adsorb and desorb from walls multiple times during their transit through the slit. The nucleotide-wall interactions differed due to nucleotide hydrophobicities and wall roughness which determined duration and frequency of nucleotide adsorptions and their velocities while adsorbed. Transient association of nucleotides with one, two, or three sodium ions occurred, but the mean association numbers (ANs) were weak functions of nucleotide type. Nucleotide-wall interactions contributed more to separation of nucleotide flight time distributions than ion association and thus indicate that nucleotide-wall interactions play a defining role in successfully discriminating between nucleotides on the basis of their flight times through nanochannels/slits. With smooth walls, smaller nucleotides moved faster, but with rough walls larger nucleotides moved faster due to fewer favorable wall adsorption sites. This indicates that roughness, or surface patterning, might be exploited to achieve better time-of-flight based discrimination between nucleotides.

Dynamic In-Situ Experimentation on Nanomaterials at the Atomic Scale

With the development of in situ techniques inside transmission electron microscopes (TEMs), external fields and probes can be applied to the specimen. This development transforms the TEM specimen chamber into a nanolab, in which reactions, structures, and properties can be activated or altered at the nanoscale, and all processes can be simultaneously recorded in real time with atomic resolution. Consequently, the capabilities of TEM are extended beyond static structural characterization to the dynamic observation of the changes in specimen structures or properties in response to environmental stimuli. This extension introduces new possibilities for understanding the relationships between structures, unique properties, and functions of nanomaterials at the atomic scale. Based on the idea of setting up a nanolab inside a TEM, tactics for design of in situ experiments inside the machine, as well as corresponding examples in nanomaterial research, including in situ growth, nanofabrication with atomic precision, in situ property characterization, and nanodevice construction are presented.

Quantum dots-nanogap metamaterials fabrication by self-assembly lithography and photoluminescence studies

We present a new and versatile technique of self-assembly lithography to fabricate a large scale Cadmium selenide quantum dots-silver nanogap metamaterials. After optical and electron microscopic characterizations of the metamaterials, we performed spatially resolved photoluminescence transmission measurements. We obtained highly quenched photoluminescence spectra compared to those from bare quantum dots film. We then quantified the quenching in terms of an average photoluminescence enhancement factor. A finite difference time domain simulation was performed to understand the role of an electric field enhancement in the nanogap over this quenching. Finally, we interpreted the mechanism of the photoluminescence quenching and proposed fabrication method of new metamaterials using our technique.

Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.

VO(2) based waveguide-mode plasmonic nano-gratings for optical switching

In this paper, we present one dimensional plasmonic narrow groove nano-gratings, covered with a thin film of VO(2) (Vanadium Dioxide), as novel optical switches. These narrow groove gratings couple the incident optical radiation to plasmonic waveguide modes leading to high electromagnetic fields in the gaps between the nano-gratings. Since VO(2) changes from its semiconductor to its metallic phase on heating, on exposure to infra-red light, or on application of voltage, the optical properties of the underlying plasmonic grating also get altered during this phase transition, thereby resulting in significant switchability of the reflectance spectra. Moreover, as the phase transition in VO(2) can occur at femto-second time-scales, the VO(2)-coated plasmonic optical switch described in this paper can potentially be employed for ultrafast optical switching. We aim at maximizing this switchability, i.e., maximizing the differential reflectance (DR) between the two states (metallic and semiconductor) of this VO(2) coated nano-grating. Rigorous Coupled Wave Analysis (RCWA) reveals that the switching wavelengths - i.e., the wavelengths at which the values of the differential reflectance between VO(2) (S) and VO(2) (M) phases are maximum - can be tuned over a large spectral regime by varying the nano-grating parameters such as groove width, depth of the narrow groove, grating width, and thickness of the VO(2) layer. A comparison of the proposed ideal nano-gratings with various types of non-ideal nano-gratings - i.e., nano-gratings with non-parallel sidewalls - has also been carried out. It is found that significant switchability is also present for these non-ideal gratings that are easy to fabricate. Thus, we propose highly switchable and wide-spectra VO(2) based narrow groove nano-gratings that do not have a complex structure and can be easily fabricated.

Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond

All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.

Fixed-gap tunnel junction for reading DNA nucleotides

Previous measurements of the electronic conductance of DNA nucleotides or amino acids have used tunnel junctions in which the gap is mechanically adjusted, such as scanning tunneling microscopes or mechanically controllable break junctions. Fixed-junction devices have, at best, detected the passage of whole DNA molecules without yielding chemical information. Here, we report on a layered tunnel junction in which the tunnel gap is defined by a dielectric layer, deposited by atomic layer deposition. Reactive ion etching is used to drill a hole through the layers so that the tunnel junction can be exposed to molecules in solution. When the metal electrodes are functionalized with recognition molecules that capture DNA nucleotides via hydrogen bonds, the identities of the individual nucleotides are revealed by characteristic features of the fluctuating tunnel current associated with single-molecule binding events.

Full-wave electromagentic analysis of a plasmonic nanoparticle separated from a plasmonic film by a thin spacer layer

This paper presents a theoretical analysis of the electromagnetic response of a plasmonic nanoparticle-spacer-plasmonic film system. The physical system consists of a spherical nanoparticle of a plasmonic material such as gold or silver over a plasmonic metal film and separated from the same by a dielectric spacer material. This paper presents a complete analytical solution of the Maxwell's equations, to determine the optical fields near the gold nanoparticle. It was found that the electromagnetic fields in between the plasmonic nanoparticle and the plasmonic film are extremely sensitive to the spacing between the nanoparticle and the film. This could enable the use of such a system for various sensing applications. The non-local nature of the plasmonic medium was also included in our analysis and it's effect on the resonances of the system was studied. The analytical solution was compared with an independent numerical method, the Finite Difference Time Domain (FDTD) method, to demonstrate the accuracy of the solution.

High precision fabrication and positioning of nanoelectrodes in a nanopore

A simple and versatile method for the direct fabrication of tunneling electrodes with controllable gap distance by using electron-beam-induced deposition (EBID) is presented. We show that tunneling nanogaps smaller than the minimum feature size realizable by conventional EBID can be achieved with a standard scanning electron microscope. These gaps can easily be embedded in nanopores with high accuracy. The controllability of this fabrication method and the nanogap geometry was verified by SEM and TEM imaging. Furthermore, tunneling spectroscopy in a group of solvents with different barrier heights was used to determine the nanogap functionality. Ultimately, the presented fabrication method can be further applied for the fabrication of arrays of nanogap/nanopores or nanogap electrodes with tunable electrode materials. Additionally, this method can also offer direct fabrication of nanoscale electrode systems with tunable spacing for redox cycling and plasmonic applications, which represents an important step in the development of tunneling nanopore structures and in enhancing the capabilities of nanopore sensors.

Direct observation of a long-lived single-atom catalyst chiseling atomic structures in graphene

Fabricating stable functional devices at the atomic scale is an ultimate goal of nanotechnology. In biological processes, such high-precision operations are accomplished by enzymes. A counterpart molecular catalyst that binds to a solid-state substrate would be highly desirable. Here, we report the direct observation of single Si adatoms catalyzing the dissociation of carbon atoms from graphene in an aberration-corrected high-resolution transmission electron microscope (HRTEM). The single Si atom provides a catalytic wedge for energetic electrons to chisel off the graphene lattice, atom by atom, while the Si atom itself is not consumed. The products of the chiseling process are atomic-scale features including graphene pores and clean edges. Our experimental observations and first-principles calculations demonstrated the dynamics, stability, and selectivity of such a single-atom chisel, which opens up the possibility of fabricating certain stable molecular devices by precise modification of materials at the atomic scale.

Toward sensitive graphene nanoribbon-nanopore devices by preventing electron beam-induced damage

Graphene-based nanopore devices are promising candidates for next-generation DNA sequencing. Here we fabricated graphene nanoribbon-nanopore (GNR-NP) sensors for DNA detection. Nanopores with diameters in the range 2-10 nm were formed at the edge or in the center of graphene nanoribbons (GNRs), with widths between 20 and 250 nm and lengths of 600 nm, on 40 nm thick silicon nitride (SiN(x)) membranes. GNR conductance was monitored in situ during electron irradiation-induced nanopore formation inside a transmission electron microscope (TEM) operating at 200 kV. We show that GNR resistance increases linearly with electron dose and that GNR conductance and mobility decrease by a factor of 10 or more when GNRs are imaged at relatively high magnification with a broad beam prior to making a nanopore. By operating the TEM in scanning TEM (STEM) mode, in which the position of the converged electron beam can be controlled with high spatial precision via automated feedback, we were able to prevent electron beam-induced damage and make nanopores in highly conducting GNR sensors. This method minimizes the exposure of the GNRs to the beam before and during nanopore formation. The resulting GNRs with unchanged resistances after nanopore formation can sustain microampere currents at low voltages (∼50 mV) in buffered electrolyte solution and exhibit high sensitivity, with a large relative change of resistance upon changes of gate voltage, similar to pristine GNRs without nanopores.