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Nadeem M, Wang X. Spin Gapless Quantum Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402503. [PMID: 38962884 DOI: 10.1002/adma.202402503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 06/04/2024] [Indexed: 07/05/2024]
Abstract
Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figure out and close this gap. In this review, spin gapless quantum materials, featured by fully spin-polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two-band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors are reviewed.
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Affiliation(s)
- Muhammad Nadeem
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials (ISEM), Faculty of Engineering and Information Sciences (EIS), University of Wollongong, Wollongong, New South Wales, 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales, 2525, Australia
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2
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Del Puppo S, Biasin P, Sala A, Mantegazza P, Pasqua I, Ghidorsi E, Caporali M, Resta A, Coati A, Genuzio F, Menteş TO, Locatelli A, Comelli G, Africh C, Vesselli E, Peressi M, Verdini A. Blue phosphorene on Au(111): theoretical, spectroscopic and diffraction analysis reveal the role of single Au adatoms. NANOSCALE ADVANCES 2024; 6:3582-3589. [PMID: 38989519 PMCID: PMC11232545 DOI: 10.1039/d4na00192c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Accepted: 05/17/2024] [Indexed: 07/12/2024]
Abstract
In investigating the monoatomic layers of P, several stable two-dimensional (2D) allotropes have been theoretically predicted. Among them, single-layer blue phosphorus (BlueP) appears to deliver promising properties. After initial success, where the structure of BlueP triangular patches on Au(111) was conceived on the basis of scanning tunneling microscopy (STM) and density functional theory (DFT), the surface structure model was revisited multiple times with increasing accuracy and insight of theoretical calculations and experimental datasets. Interestingly, the quest for a reliable atomic structure model of BlueP on Au(111) turned out to be very contentious and challenging, particularly considering the possible incorporation of Au atoms in the 2D sheet of P. This article proposes an extended report on theoretical findings that can be extracted from DFT calculations of the orbital projected band structure and employed for an efficient comparison protocol between the calculations and experimental datasets obtained from angle-resolved photoemission spectroscopy (ARPES). The findings, together with experimental and simulated data from STM imaging and surface X-ray diffraction (SXRD), show a clear way to verify the presence and characterize the stabilizing effect of foreign atoms in 2D materials.
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Affiliation(s)
- Simone Del Puppo
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Pietro Biasin
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Alessandro Sala
- CNR - Istituto Officina dei Materiali (IOM) S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Paola Mantegazza
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Ivan Pasqua
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Elena Ghidorsi
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Maria Caporali
- CNR-ICCOM Via Madonna del Piano 10, 50019 Sesto Fiorentino Italy
| | - Andrea Resta
- Synchrotron SOLEIL L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin France
| | - Alessandro Coati
- Synchrotron SOLEIL L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin France
| | - Francesca Genuzio
- Elettra Sincrotrone Trieste S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - T Onur Menteş
- Elettra Sincrotrone Trieste S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Andrea Locatelli
- Elettra Sincrotrone Trieste S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Giovanni Comelli
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
- CNR - Istituto Officina dei Materiali (IOM) S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Cristina Africh
- CNR - Istituto Officina dei Materiali (IOM) S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Erik Vesselli
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
- CNR - Istituto Officina dei Materiali (IOM) S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
| | - Maria Peressi
- Department of Physics, University of Trieste Via Valerio 2 34127 Trieste Italy
| | - Alberto Verdini
- CNR - Istituto Officina dei Materiali (IOM) S.S. 14 km 163.5 in AREA Science Park 34129 Trieste Italy
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3
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Weng G, Laderer W, Alexandrova AN. Understanding the Adiabatic Evolution of Surface States in Tetradymite Topological Insulators under Electrochemical Conditions. J Phys Chem Lett 2024:2732-2739. [PMID: 38436223 DOI: 10.1021/acs.jpclett.4c00064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2024]
Abstract
Nontrivial surface states in topological materials have emerged as exciting targets for surface chemistry research. In particular, topological insulators have been used as electrodes in electrocatalytic reactions. Herein, we investigate the robustness of the topological surface states and band topology under electrochemical conditions, specifically in the presence of an electric double layer. First-principles band structure calculations are performed on the electrified (111) surfaces of Bi2Te3, Bi2Se3, and Sb2Te3 using an implicit electrolyte model. Our results demonstrate the adiabatic evolution of the surface states upon surface charging. Under oxidizing potentials, the surface states are shifted upward in energy, preserving the Dirac point on the surface and the band inversion in the bulk. Conversely, under reduced potentials, hybridization is observed between the surface and bulk states, suggesting a likely breakdown of topological protection. The position of the Fermi level, which dictates the working states in catalytic reactions, should ideally be confined within the bulk bandgap. This requirement defines a potential window for the effective application of topological electrocatalysis.
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Affiliation(s)
- Guorong Weng
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - William Laderer
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Anastassia N Alexandrova
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- Center for Quantum Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
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4
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Zhang W, Zhang X, Ono LK, Qi Y, Oughaddou H. Recent Advances in Phosphorene: Structure, Synthesis, and Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303115. [PMID: 37726245 DOI: 10.1002/smll.202303115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 08/27/2023] [Indexed: 09/21/2023]
Abstract
Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.
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Affiliation(s)
- Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xuan Zhang
- School of Materials and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Luis K Ono
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Hamid Oughaddou
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay (ISMO), Bât. 520, Orsay, 91405, France
- Département de Physique, CY Cergy-Paris Université, Cergy-Pontoise Cedex, F-95031, France
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Muroni A, Brozzesi S, Bechstedt F, Gori P, Pulci O. Tuning Gaps and Schottky Contacts of Graphene/Phosphorene Heterostructures by Vertical Electric Field and Strain. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2358. [PMID: 37630942 PMCID: PMC10459302 DOI: 10.3390/nano13162358] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 08/03/2023] [Accepted: 08/15/2023] [Indexed: 08/27/2023]
Abstract
We present a comprehensive study of the structural and electronic properties of a graphene/phosphorene (G/P) heterostructure in the framework of density functional theory, including van der Waals interaction in the exchange-correlation functional. While the G(4 × 1)/P(3 × 1) superlattice usually used in the literature is subject to a strain as high as about 7%, the in-plane strain could be drastically reduced to under 1% in the G(4 × 13)/P(3 × 12) heterostructure investigated here. Adapting the lattice constants of the rectangular lattices, the equilibrium configuration in the xy plane of phosphorene relative to the graphene layer is optimized. This results in an equilibrium interlayer distance of 3.5 Å and a binding energy per carbon atom of 37 meV, confirming the presence of weak van der Waals interaction between the graphene and the phosphorene layers. The electronic properties of the heterostructure are evaluated under different values of interlayer distance, strain and applied vertical electric field. We demonstrate that G/P heterostructures form an n-type Schottky contact, which can be transformed into p-type under external perturbations. These findings, together with the possibility to control the gaps and barrier heights, suggest that G/P heterostructures are promising for novel applications in electronics and may open a new avenue for the realization of innovative optoelectronic devices.
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Affiliation(s)
- Alessia Muroni
- Department of Physics, University of Rome ‘Tor Vergata’ and INFN, Via della Ricerca Scientifica 1, 00133 Rome, Italy; (A.M.); (S.B.); (O.P.)
| | - Simone Brozzesi
- Department of Physics, University of Rome ‘Tor Vergata’ and INFN, Via della Ricerca Scientifica 1, 00133 Rome, Italy; (A.M.); (S.B.); (O.P.)
| | - Friedhelm Bechstedt
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Paola Gori
- Department of Industrial, Electronic and Mechanical Engineering, Roma Tre University, Via della Vasca Navale 79, 00146 Rome, Italy
| | - Olivia Pulci
- Department of Physics, University of Rome ‘Tor Vergata’ and INFN, Via della Ricerca Scientifica 1, 00133 Rome, Italy; (A.M.); (S.B.); (O.P.)
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Tian H, Wang J, Lai G, Dou Y, Gao J, Duan Z, Feng X, Wu Q, He X, Yao L, Zeng L, Liu Y, Yang X, Zhao J, Zhuang S, Shi J, Qu G, Yu XF, Chu PK, Jiang G. Renaissance of elemental phosphorus materials: properties, synthesis, and applications in sustainable energy and environment. Chem Soc Rev 2023; 52:5388-5484. [PMID: 37455613 DOI: 10.1039/d2cs01018f] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The polymorphism of phosphorus-based materials has garnered much research interest, and the variable chemical bonding structures give rise to a variety of micro and nanostructures. Among the different types of materials containing phosphorus, elemental phosphorus materials (EPMs) constitute the foundation for the synthesis of related compounds. EPMs are experiencing a renaissance in the post-graphene era, thanks to recent advancements in the scaling-down of black phosphorus, amorphous red phosphorus, violet phosphorus, and fibrous phosphorus and consequently, diverse classes of low-dimensional sheets, ribbons, and dots of EPMs with intriguing properties have been produced. The nanostructured EPMs featuring tunable bandgaps, moderate carrier mobility, and excellent optical absorption have shown great potential in energy conversion, energy storage, and environmental remediation. It is thus important to have a good understanding of the differences and interrelationships among diverse EPMs, their intrinsic physical and chemical properties, the synthesis of specific structures, and the selection of suitable nanostructures of EPMs for particular applications. In this comprehensive review, we aim to provide an in-depth analysis and discussion of the fundamental physicochemical properties, synthesis, and applications of EPMs in the areas of energy conversion, energy storage, and environmental remediation. Our evaluations are based on recent literature on well-established phosphorus allotropes and theoretical predictions of new EPMs. The objective of this review is to enhance our comprehension of the characteristics of EPMs, keep abreast of recent advances, and provide guidance for future research of EPMs in the fields of chemistry and materials science.
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Affiliation(s)
- Haijiang Tian
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Gengchang Lai
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yanpeng Dou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Jie Gao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Zunbin Duan
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Xiaoxiao Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Qi Wu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Xingchen He
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Linlin Yao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Li Zeng
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Yanna Liu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Xiaoxi Yang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Jing Zhao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Shulin Zhuang
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jianbo Shi
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guangbo Qu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Paul K Chu
- Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Guibin Jiang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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7
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Zaman A, Shahriar R, Hossain SMT, Akhond MR, Mumu HT, Sharif A. A graphene-like BeS monolayer as a promising gas sensor material with strain and electric field induced tunable response: a first-principles study. RSC Adv 2023; 13:23558-23569. [PMID: 37555094 PMCID: PMC10405050 DOI: 10.1039/d2ra08121k] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Accepted: 07/29/2023] [Indexed: 08/10/2023] Open
Abstract
A comprehensive investigation of the gas sensing potential of BeS monolayer has been conducted using DFT calculations. Twelve common pollutant gases: NH3, NO2, NO, CO, CO2, CH4, H2, O2, N2, H2S, H2O and SO2, have been studied. Our analysis reveals defect states in the band structure near the Fermi level and strong hybridization between gas molecule orbitals and the BeS monolayer. We observe higher adsorption energies for NH3 and CO compared to other popular gas sensing materials. The optical properties of CO2 and NO2 adsorbed on the BeS monolayer show increased reflectivity and absorption coefficient in the UV and far infrared region. Tensile strain has minimal impact on adsorption energy, while biaxial compressive strains enhance the gas sensing capability of the BeS monolayer. The application of an electric field offers control over gas adsorption and desorption. We propose the BeS monolayer as a promising candidate for future gas molecule sensing applications due to its high adsorption energy, rapid recovery time, and distinct optical properties.
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Affiliation(s)
- Akib Zaman
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh (+88)-029665618 (+88)-01912802486
| | - Rifat Shahriar
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh
| | - S M Takvir Hossain
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh (+88)-029665618 (+88)-01912802486
| | - Md Rajbanul Akhond
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh (+88)-029665618 (+88)-01912802486
| | - Homayra Tabassum Mumu
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh (+88)-029665618 (+88)-01912802486
| | - Ahmed Sharif
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering & Technology Dhaka 1000 Bangladesh (+88)-029665618 (+88)-01912802486
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8
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Margot F, Lisi S, Cucchi I, Cappelli E, Hunter A, Gutiérrez-Lezama I, Ma K, von Rohr F, Berthod C, Petocchi F, Poncé S, Marzari N, Gibertini M, Tamai A, Morpurgo AF, Baumberger F. Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES. NANO LETTERS 2023; 23:6433-6439. [PMID: 37460109 PMCID: PMC10375583 DOI: 10.1021/acs.nanolett.3c01226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.
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Affiliation(s)
- Florian Margot
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Simone Lisi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Irène Cucchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Edoardo Cappelli
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Andrew Hunter
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - KeYuan Ma
- Department of Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - Fabian von Rohr
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Christophe Berthod
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Francesco Petocchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Samuel Poncé
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, BE-1348 Louvain-la-Neuve, Belgium
| | - Nicola Marzari
- Laboratory of Theory and Simulation of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, 41125 Modena, Italy
| | - Anna Tamai
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Felix Baumberger
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
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9
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Chen CJ, Chao YC, Lin YH, Zhuang YH, Lai YM, Huang ST, MacDonald AH, Shih CK, Wang BY, Su JJ, Hsu PJ. Single-Atomic-Layer Stanene on Ferromagnetic Co Nanoislands with Topological Band Structures. ACS NANO 2023; 17:7456-7465. [PMID: 37014733 DOI: 10.1021/acsnano.2c12144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Introducing magnetism to two-dimensional topological insulators is a central issue in the pursuit of magnetic topological materials in low dimensionality. By means of low-temperature growth at 80 K, we succeeded in fabricating a monolayer stanene on Co/Cu(111) and resolving ferromagnetic spin contrast by field-dependent spin-polarized scanning tunneling microscopy (SP-STM). Increases of both remanence to saturation magnetization ratio (Mr/Ms) and coercive field (Hc) due to an enhanced perpendicular magnetic anisotropy (PMA) are further identified by out-of-plane magneto-optical Kerr effect (MOKE). In addition to ultraflat stanene fully relaxed on bilayer Co/Cu(111) from density functional theory (DFT), characteristic topological properties including an in-plane s-p band inversion and a spin-orbit coupling (SOC) induced gap about 0.25 eV at the Γ̅ point have also been verified in the Sn-projected band structure. Interfacial coupling of single-atomic-layer stanene with ferromagnetic Co biatomic layers allows topological band features to coexist with ferromagnetism, facilitating a conceptual design of atomically thin magnetic topological heterostructures.
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Affiliation(s)
- Chia-Ju Chen
- Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan
| | - Yung-Chun Chao
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan
| | - Yen-Hui Lin
- Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan
| | - Yi-Hao Zhuang
- Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan
| | - Yen-Ming Lai
- Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
| | - Shih-Tang Huang
- Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Chih-Kang Shih
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Bo-Yao Wang
- Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
| | - Jung-Jung Su
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 300093, Taiwan
| | - Pin-Jui Hsu
- Department of Physics, National Tsing Hua University, 300044 Hsinchu, Taiwan
- Center for Quantum Technology, National Tsing Hua University, Hsinchu 300044, Taiwan
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10
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Shen N, Lei S, Wang Y, Wan N, Chen J, Huang Q. Large gap two-dimensional topological insulators with the coexistence of a significant Rashba effect and piezoelectricity in functionalized PbGe monolayers. NANOSCALE 2023; 15:4045-4052. [PMID: 36728990 DOI: 10.1039/d2nr05912f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, two-dimensional (2D) multifunctional materials have become a research hotpot for their wide application range. In this work, PbGe(CN)2 and PbGe(C2H)2 are predicted to realize the piezoelectricity, quantum spin Hall (QSH) insulator, and Rashba effects simultaneously. The topological bandgaps of PbGe(CN)2 and PbGe(C2H)2 are 0.418 and 0.405 eV, respectively, which are much larger than the recently reported value of 0.165 eV for InTeO that can also attain both the piezoelectricity and QSH insulator (PQSHI) effects. The in-plane and out-of-plane piezoelectric effects coexist in both PbGe(CN)2 and PbGe(C2H)2 with the in-plane piezoelectric coefficients d11 of 8.823 and 2.913 pm V-1 and out-of-plane piezoelectric coefficients d31 of 0.638 and 0.608 pm V-1. It is worth noting that there are significant Rashba SOC effects in PbGe(CN)2 and PbGe(C2H)2 and their Rashba splitting parameters are 2.576 and 2.184 eV Å, respectively. The prominent Rashba effects, which don't exist in other PQSHI materials, make PbGe(CN)2 and PbGe(C2H)2 more suitable for application in spintronic devices. Besides, the topological properties can remain robust under the uniaxial strain within the range of -6% to 6%. Our results imply that PbGe(CN)2 and PbGe(C2H)2 qualify as potential candidates for low-power, highly sensitive piezoelectric devices, such as pressure sensors for converting mechanical energy into electrical energy.
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Affiliation(s)
- Ningyuan Shen
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Shuangying Lei
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Yonghu Wang
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Neng Wan
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Jie Chen
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
| | - Qingan Huang
- Key Laboratory of Microelectromechanical Systems of the Ministry of Education, Southeast University, Nanjing 210096, China.
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11
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Chen J, Wang C, Li H, Xu X, Yang J, Huo Z, Wang L, Zhang W, Xiao X, Ma Y. Recent Advances in Surface Modifications of Elemental Two-Dimensional Materials: Structures, Properties, and Applications. MOLECULES (BASEL, SWITZERLAND) 2022; 28:molecules28010200. [PMID: 36615394 PMCID: PMC9822514 DOI: 10.3390/molecules28010200] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2022] [Revised: 12/17/2022] [Accepted: 12/21/2022] [Indexed: 12/28/2022]
Abstract
The advent of graphene opens up the research into two-dimensional (2D) materials, which are considered revolutionary materials. Due to its unique geometric structure, graphene exhibits a series of exotic physical and chemical properties. In addition, single-element-based 2D materials (Xenes) have garnered tremendous interest. At present, 16 kinds of Xenes (silicene, borophene, germanene, phosphorene, tellurene, etc.) have been explored, mainly distributed in the third, fourth, fifth, and sixth main groups. The current methods to prepare monolayers or few-layer 2D materials include epitaxy growth, mechanical exfoliation, and liquid phase exfoliation. Although two Xenes (aluminene and indiene) have not been synthesized due to the limitations of synthetic methods and the stability of Xenes, other Xenes have been successfully created via elaborate artificial design and synthesis. Focusing on elemental 2D materials, this review mainly summarizes the recently reported work about tuning the electronic, optical, mechanical, and chemical properties of Xenes via surface modifications, achieved using controllable approaches (doping, adsorption, strain, intercalation, phase transition, etc.) to broaden their applications in various fields, including spintronics, electronics, optoelectronics, superconducting, photovoltaics, sensors, catalysis, and biomedicines. These advances in the surface modification of Xenes have laid a theoretical and experimental foundation for the development of 2D materials and their practical applications in diverse fields.
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Affiliation(s)
- Junbo Chen
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Chenhui Wang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Hao Li
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Xin Xu
- State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Jiangang Yang
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Zhe Huo
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Lixia Wang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
| | - Weifeng Zhang
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
- Correspondence: (W.Z.); (X.X.); (Y.M.)
| | - Xudong Xiao
- School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Correspondence: (W.Z.); (X.X.); (Y.M.)
| | - Yaping Ma
- Key Laboratory of Quantum Matt Science, Henan Key Laboratory of Photovoltaic Materials, Henan University, Zhengzhou 450046, China
- Correspondence: (W.Z.); (X.X.); (Y.M.)
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12
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Generating intense electric fields in 2D materials by dual ionic gating. Nat Commun 2022; 13:6601. [PMID: 36329011 PMCID: PMC9633598 DOI: 10.1038/s41467-022-34158-z] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 10/14/2022] [Indexed: 11/06/2022] Open
Abstract
The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields. The application of electric fields >1 V/nm in solid state devices could provide access to unexplored phenomena, but it is currently difficult to implement. Here, the authors develop a double-sided ionic liquid gating technique to generate electric fields as large as 4 V/nm across few-layer WSe2, leading to field-induced semiconductor-to-metal transitions.
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13
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Zhao J, Jin X, Yao C, Zeng H. First-principles study of O-functionalized two-dimensional AsP monolayers: electronic structure, mechanical, piezoelectric, and optical properties. NANOTECHNOLOGY 2022; 34:015201. [PMID: 36162330 DOI: 10.1088/1361-6528/ac94db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Using density functional theory, we investigated the geometrical properties, electronic structures, carrier mobilities, piezoelectric coefficients, and optical absorption behaviors of three O-functionalizedβ-phase AsP structures (b-AsPO-FO, b-AsPO-As-SO and b-AsPO-P-SO). It is shown that three O-functionalized monolayers are all indirect semiconductors with bandgaps of 0.21, 0.67, and 0.80 eV, respectively. Our calculations demonstrated that the pristine AsP monolayer and these O-functionalized AsP monolayers have strongly anisotropic carrier mobilities, allowing their potential applications for in-plane anisotropic electronic device. The bandgaps of three functionalized nanomaterials exhibit non-monotonic variations under the biaxial strains changing from -0.10 to +0.10, all experiencing metal-indirect bandgap-direct bandgap transition. The calculated in-plane Young's modulus results suggest that they are fairly flexible to allow the application of large elastic strains on the chemically functionalized AsP monolayers. Furthermore, the b-AsPO-FO monolayer exhibits excellent anisotropic light-harvesting behavior (absorption peak: 2.36 and 2.76 eV alongxand 2.37 eV alongydirection) in visible light region. The b-AsPO-As-SO and b-AsPO-P-SO monolayers have strong absorption peak at 2.60 eV and 2.87 eV, respectively. The tunable electronic structures, anisotropic carrier mobility, and excellent optical absorption properties may facilitate practical applications of O-functionalized b-AsP monolayers in nanoelectronics and photovoltaics.
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Affiliation(s)
- Jun Zhao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Xuehu Jin
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Can Yao
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China
| | - Hui Zeng
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
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14
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Shao J, Kan E, Qian Y, Wu H. Several semiconducting two-dimensional silicon nanosheets assembled from zigzag silicene nanoribbons. NANOSCALE 2022; 14:14038-14045. [PMID: 36111827 DOI: 10.1039/d2nr04078f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Semiconducting two-dimensional intrinsic silicon nanosheets are ideal materials for many applications in modern industry, since they are the only ones that can match well with previous silicon components. However, such materials are still lacking, especially those with moderate band gaps. In this work, by using first-principles theory, a series of two-dimensional intrinsic silicon nanosheets are assembled from zigzag silicene nanoribbons with different widths. The result shows that all the nanosheets behave as semiconductors, although some of them possess small band gaps of dozens of meV. Two of them, individually assembled from the two narrowest zigzag silicene nanoribbons, possess the largest indirect band gaps of 0.20 and 0.26 eV, respectively. Under low compressive strain, these two nanosheets would turn into quasi-direct or direct band gap semiconductors, and the gaps increase up to 0.62 or 0.54 eV, respectively. Due to the electron transfer from three-fold to four-fold coordinated Si atoms, the charge carriers prefer to transport along the zigzag direction, and electrons and holes transport in the respective Si chains. Interestingly, the investigation of Poisson's ratio reveals that the assembled silicon nanosheets have a negative Poisson's ratio in certain strain ranges if the width n of zigzag silicene nanoribbons is even. This work provides a new approach to design semiconducting silicon nanosheets and benefits to the applications of two-dimensional silicon nanosheets in many electronic and mechanical fields.
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Affiliation(s)
- Jinfan Shao
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Erjun Kan
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yan Qian
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Haiping Wu
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China.
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Nanjing University of Science and Technology, Nanjing 210094, China
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15
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Cheng P, Li G, Zeng S, Li Y, Meng X, Xu J. Prediction of highly stable two-dimensional materials of boron and phosphorus: structural and electronic properties. Phys Chem Chem Phys 2022; 24:24413-24418. [PMID: 36189667 DOI: 10.1039/d2cp03243k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The discovery of two-dimensional (2D) semiconducting materials has attracted broad research interest, owing to their wide applications in spintronics and optoelectronics. Group III-V 2D materials such as hexagonal boron nitride (h-BN) have been demonstrated with remarkable electronic properties. However, the 2D materials consisting of boron and phosphorus have not been comprehensively explored. Using global structural search combined with first-principles calculations, we have hereby theoretically predicted several stable and metastable boron phosphorus (BmPn) monolayer 2D compounds that have lower formation enthalpies (ΔH) than black phosphorus and α-bulk boron and could be formed at stoichiometries of m/n ≤ 1. Two of these 2D BmPn compounds, i.e., P21/m B1P3 and Cm B2P4, are confirmed to be thermodynamically stable, with bandgaps less than 2 eV. In particular, Cm B2P4 features a narrow bandgap of ∼0.609 eV, near the short wavelength infrared ray (SWIR) region, and it possesses anisotropic mechanical properties. Moreover, we have demonstrated that these compounds can be converted into half-metallic spin-polarized states through charge doping, which promises their applications in spintronic devices.
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Affiliation(s)
- Puxin Cheng
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tongyan Road 38, Tianjin 300350, P. R. China.
| | - Geng Li
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tongyan Road 38, Tianjin 300350, P. R. China. .,National Supercomputer Center in Tianjin, Tianjin 300457, P. R. China.
| | - Shuming Zeng
- Department of Physics, Yangzhou University, Yangzhou 225009, P. R. China
| | - Yunlong Li
- National Supercomputer Center in Tianjin, Tianjin 300457, P. R. China.
| | - Xiangfei Meng
- National Supercomputer Center in Tianjin, Tianjin 300457, P. R. China.
| | - Jialiang Xu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tongyan Road 38, Tianjin 300350, P. R. China.
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16
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Hu H, Chen N, Teng H, Yu R, Qu Y, Sun J, Xue M, Hu D, Wu B, Li C, Chen J, Liu M, Sun Z, Liu Y, Li P, Fan S, García de Abajo FJ, Dai Q. Doping-driven topological polaritons in graphene/α-MoO 3 heterostructures. NATURE NANOTECHNOLOGY 2022; 17:940-946. [PMID: 35982316 PMCID: PMC9477736 DOI: 10.1038/s41565-022-01185-2] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2022] [Accepted: 06/28/2022] [Indexed: 05/20/2023]
Abstract
Control over charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties of materials. This approach can also be used to induce topological transitions in the optical response of photonic systems. Here we report a topological transition in the isofrequency dispersion contours of hybrid polaritons supported by a two-dimensional heterostructure consisting of graphene and α-phase molybdenum trioxide. By chemically changing the doping level of graphene, we observed that the topology of polariton isofrequency surfaces transforms from open to closed shapes as a result of doping-dependent polariton hybridization. Moreover, when the substrate was changed, the dispersion contour became dominated by flat profiles at the topological transition, thus supporting tunable diffractionless polariton propagation and providing local control over the optical contour topology. We achieved subwavelength focusing of polaritons down to 4.8% of the free-space light wavelength by using a 1.5-μm-wide silica substrate as an in-plane lens. Our findings could lead to on-chip applications in nanoimaging, optical sensing and manipulation of energy transfer at the nanoscale.
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Grants
- National Key Research and Development Program of China (Grant No. 2020YFB2205701), the National Natural Science Foundation of China (Grant Nos. 51902065, 52172139, 51925203, U2032206, 52072083, and 51972072)
- Beijing Municipal Natural Science Foundation (Grant No. 2202062), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB36000000, XDB30000000).
- Z.P.S. acknowledges the Academy of Finland (Grant Nos. 314810, 333982, 336144, and 336818), The Business Finland (ALDEL), the Academy of Finland Flagship Programme (320167, PREIN), the European Union’s Horizon 2020 research and innovation program (820423, S2QUIP; 965124, FEMTOCHIP), the EU H2020-MSCA-RISE-872049 (IPN-Bio), and the ERC (834742).
- P.N.L acknowledges the National Natural Science Foundation of China (grantno.62075070)
- S.F. acknowledges the support of the U.S. Department of Energy under Grant No. DE-FG02-07ER46426.
- F.J.G.A. acknowledges the ERC (Advanced Grant 789104-eNANO), the Spanish MINECO (SEV2015-0522), and the CAS President’s International Fellowship Initiative (PIFI) for 2021.
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Affiliation(s)
- Hai Hu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China.
- University of Chinese Academy of Sciences, Beijing, People's Republic of China.
| | - Na Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Hanchao Teng
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Renwen Yu
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain.
- Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, CA, USA.
| | - Yunpeng Qu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jianzhe Sun
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, People's Republic of China
| | - Mengfei Xue
- The Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Debo Hu
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, People's Republic of China
| | - Chi Li
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Jianing Chen
- The Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China
| | - Mengkun Liu
- Department of Physics and Astronomy, Stony Brook University, NY, USA
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Beijing, People's Republic of China
| | - Peining Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, People's Republic of China
| | - Shanhui Fan
- Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - F Javier García de Abajo
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Spain.
- ICREA-Institució Catalana de Recerca i Estudis Avançats, Barcelona, Spain.
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, People's Republic of China.
- University of Chinese Academy of Sciences, Beijing, People's Republic of China.
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17
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Lu Q, Cook J, Zhang X, Chen KY, Snyder M, Nguyen DT, Reddy PVS, Qin B, Zhan S, Zhao LD, Kowalczyk PJ, Brown SA, Chiang TC, Yang SA, Chang TR, Bian G. Realization of unpinned two-dimensional dirac states in antimony atomic layers. Nat Commun 2022; 13:4603. [PMID: 35933407 PMCID: PMC9357080 DOI: 10.1038/s41467-022-32327-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2022] [Accepted: 07/26/2022] [Indexed: 11/24/2022] Open
Abstract
Two-dimensional (2D) Dirac states with linear dispersion have been observed in graphene and on the surface of topological insulators. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at \documentclass[12pt]{minimal}
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\begin{document}$$\overline{{{\Gamma }}}$$\end{document}Γ¯ in topological insulators Bi2Se(Te)3 and Dirac cones at K and \documentclass[12pt]{minimal}
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\begin{document}$$K^{\prime}$$\end{document}K′ points in graphene. The low-energy dispersion of those Dirac states are isotropic due to the constraints of crystal symmetries. In this work, we report the observation of novel 2D Dirac states in antimony atomic layers with phosphorene structure. The Dirac states in the antimony films are located at generic momentum points. This unpinned nature enables versatile ways such as lattice strains to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points are highly anisotropic due to the reduced symmetry of generic momentum points. The exotic properties of unpinned Dirac states make antimony atomic layers a new type of 2D Dirac semimetals that are distinct from graphene. In graphene and on the surfaces of many topological insulators, the Dirac cones are pinned to high symmetry points in reciprocal space. Here, the authors report that the Dirac cones in atomically-thin Sb layers occur at generic reciprocal-space points which can be tuned by lattice strain.
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Affiliation(s)
- Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Xiaoqian Zhang
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Kyle Y Chen
- Rock Bridge High School, Columbia, MO, 65203, USA
| | - Matthew Snyder
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | - Duy Tung Nguyen
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA
| | | | - Bingchao Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Shaoping Zhan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Pawel J Kowalczyk
- Department of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, 90-236 Lodz, Pomorska, 149/153, Poland.
| | - Simon A Brown
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Physical and Chemical Sciences, University of Canterbury, Private Bag 4800, Christchurch, 8140, New Zealand
| | - Tai-Chang Chiang
- Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL, 61801-3080, USA.,Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, IL, 61801-2902, USA
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211, USA.
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18
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SF6 and SOF2 interaction studies on novel Tricycle Red Phosphorene sheets based on first-principles studies. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139674] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
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19
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Hussien MAM, Ukpong AM. Quantum Phase Transition in the Spin Transport Properties of Ferromagnetic Metal-Insulator-Metal Hybrid Materials. NANOMATERIALS 2022; 12:nano12111836. [PMID: 35683692 PMCID: PMC9182424 DOI: 10.3390/nano12111836] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 05/20/2022] [Accepted: 05/23/2022] [Indexed: 01/25/2023]
Abstract
Perpendicular magnetic tunnel junctions provide a technologically important design platform for studying metal-insulator-metal heterostructure materials. Accurate characterization of the sensitivity of their electronic structure to proximity coupling effects based on first-principles calculations is key in the fundamental understanding of their emergent collective properties at macroscopic scales. Here, we use an effective field theory that combines ab initio calculations of the electronic structure within density functional theory with the plane waves calculation of the spin polarised conductance to gain insights into the proximity effect induced magnetoelectric couplings that arise in the transport of spin angular momentum when a monolayer tunnel barrier material is integrated into the magnetic tunnel junction. We find that the spin density of states exhibits a discontinuous change from half-metallic to the metallic character in the presence of monolayer hexagonal boron nitride when the applied electric field reaches a critical amplitude, and this signals a first order transition in the transport phase. This unravels an electric-field induced quantum phase transition in the presence of a monolayer hexagonal boron nitride tunnel barrier quite unlike molybdenum disulphide. The role of the applied electric field in the observed phase transition is understood in terms of the induced spin-flip transition and the charge transfer at the constituent interfaces. The results of this study show that the choice of the tunnel barrier layer material plays a nontrivial role in determining the magnetoelectric couplings during spin tunnelling under external field bias.
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Affiliation(s)
- Musa A. M. Hussien
- Theoretical and Computational Condensed Matter and Materials Physics Group (TCCMMP), School of Chemistry and Physics, University of KwaZulu-Natal, Pietermaritzburg 3201, South Africa;
| | - Aniekan Magnus Ukpong
- Theoretical and Computational Condensed Matter and Materials Physics Group (TCCMMP), School of Chemistry and Physics, University of KwaZulu-Natal, Pietermaritzburg 3201, South Africa;
- National Institute for Theoretical and Computational Sciences (NITheCS), Pietermaritzburg 3201, South Africa
- Correspondence: ; Tel.: +27-33-260-5875; Fax: +27-031-260-3091
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20
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Anomalous non-equilibrium response in black phosphorus to sub-gap mid-infrared excitation. Nat Commun 2022; 13:2667. [PMID: 35562345 PMCID: PMC9106664 DOI: 10.1038/s41467-022-30341-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Accepted: 04/27/2022] [Indexed: 12/02/2022] Open
Abstract
The competition between the electron-hole Coulomb attraction and the 3D dielectric screening dictates the optical properties of layered semiconductors. In low-dimensional materials, the equilibrium dielectric environment can be significantly altered by the ultrafast excitation of photo-carriers, leading to renormalized band gap and exciton binding energies. Recently, black phosphorus emerged as a 2D material with strongly layer-dependent electronic properties. Here, we resolve the response of bulk black phosphorus to mid-infrared pulses tuned across the band gap. We find that, while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance. With the support of DFT calculations, we tentatively ascribe this experimental evidence to a non-adiabatic modification of the screening environment. Our work heralds the non-adiabatic optical manipulation of the electronic properties of 2D materials, which is of great relevance for the engineering of versatile van der Waals materials. Here, the authors investigate the optical response of bulk black phosphorus to mid-infrared pulses, and find that while above-gap excitation leads to a broadband light-induced transparency, sub-gap pulses drive an anomalous response, peaked at the single-layer exciton resonance.
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21
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Dardzinski D, Yu M, Moayedpour S, Marom N. Best practices for first-principles simulations of epitaxial inorganic interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:233002. [PMID: 35193122 DOI: 10.1088/1361-648x/ac577b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Accepted: 02/22/2022] [Indexed: 06/14/2023]
Abstract
At an interface between two materials physical properties and functionalities may be achieved, which would not exist in either material alone. Epitaxial inorganic interfaces are at the heart of semiconductor, spintronic, and quantum devices. First principles simulations based on density functional theory (DFT) can help elucidate the electronic and magnetic properties of interfaces and relate them to the structure and composition at the atomistic scale. Furthermore, DFT simulations can predict the structure and properties of candidate interfaces and guide experimental efforts in promising directions. However, DFT simulations of interfaces can be technically elaborate and computationally expensive. To help researchers embarking on such simulations, this review covers best practices for first principles simulations of epitaxial inorganic interfaces, including DFT methods, interface model construction, interface structure prediction, and analysis and visualization tools.
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Affiliation(s)
- Derek Dardzinski
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
| | - Maituo Yu
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
| | - Saeed Moayedpour
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
| | - Noa Marom
- Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, United States of America
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22
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Li JW, Ke SS, Deng HX, Sun X, Guo Y, Lü HF. Defect modulated electronic structure and magnetism in the 1T′ phase of Janus MoSSe. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2021.111440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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23
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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24
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Trigonal multivalent polonium monolayers with intrinsic quantum spin Hall effects. Sci Rep 2022; 12:2129. [PMID: 35136163 PMCID: PMC8826415 DOI: 10.1038/s41598-022-06242-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 01/21/2022] [Indexed: 11/25/2022] Open
Abstract
Two-dimensional (2D) topological insulators, a type of the extraordinary quantum electronic states, have attracted considerable interest due to their unique electronic properties and promising potential applications. Recently, the successful fabrication of 2D Te monolayers (i.e. tellurene) in experiments (Zhu et al., Phys Rev Lett 119:106101, 2017) has promoted researches on the group-VI monolayer materials. With first-principles calculations and tight-binding (TB) method, we investigate the structures and electronic states of 2D polonium (poloniumene), in which Po is a congener of Te. The poloniumene is found to have the tendency of forming a three-atomic-layer 1 T-MoS2-like structure (called trigonal poloniumene), namely, the central-layer Po atoms behave metal-like, while the two-outer-layer Po atoms are semiconductor-like. This unique multivalent behavior of the Po atoms is conducive to the structural stability of the monolayer, which is found to be an intrinsic quantum spin Hall insulator with a large band gap. The nontrivial topology originates from the \documentclass[12pt]{minimal}
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\begin{document}$$p_{x,y} - p_{z}$$\end{document}px,y-pz band inversion, which can be understood based on a built TB model. The poloniumene with different congener elements doped is also explored. Our results provide a thorough understanding of structures and electronic states of 2D polonium-related materials.
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25
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Luo Q, Yin S, Sun X, Tang Y, Feng Z, Dai X. Two-dimensional type-II XSi 2P 4/MoTe 2 (X = Mo, W) van der Waals heterostructures with tunable electronic and optical properties. NEW J CHEM 2022. [DOI: 10.1039/d2nj03809a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
The type-II MoSi2P4/MoTe2 (WSi2P4/MoTe2) possesses a direct bandgap of 0.258 eV (0.363 eV) at the PBE level and shows promise for application in the nanoelectronic and optoelectronic fields.
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Affiliation(s)
- Qingqing Luo
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Shaoqian Yin
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Xiaoxin Sun
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
| | - Yanan Tang
- School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044, China
| | - Zhen Feng
- School of Materials Science and Engineering, Henan Engineering Research Center for Modification Technology of Metal Materials, Henan Institute of Technology, Xinxiang, Henan 453000, China
| | - Xianqi Dai
- School of Physics, Henan Normal University, Xinxiang, Henan 453007, China
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26
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Sattigeri RM, Jha PK. Functionalized tellurene; a candidate large-gap 2D topological insulator. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:08LT01. [PMID: 34787102 DOI: 10.1088/1361-648x/ac3a47] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2021] [Accepted: 11/16/2021] [Indexed: 06/13/2023]
Abstract
The discovery of group IV and V elemental xene's with topologically non-trivial characters in their honeycomb lattice structure (HLS) has led to extensive efforts in realising analogous behaviour in group VI elemental monolayers. Theoretically; it was concluded that, group VI elemental monolayers cannot exist in HLS. However, some recent experimental evidence suggests that group VI elemental monolayers can be realised in HLS. In this letter, we report HLS of group VI elemental monolayer (such as, tellurene) can be realised to be dynamically stable when functionzalised with oxygen. The functionalization leads to, peculiar orbital filtering effects and broken spatial inversion symmetry which gives rise to the non-trivial topological character. The exotic quantum behaviour of this system is characterized by, spin-orbit coupling induced large-gap (≈0.36 eV) with isolated Dirac cone along the edges indicating potential room temperature spin-transport applications. Further investigations of spin Hall conductivity and the Berry curvatures unravel high conductivity as compared to previously explored xene's alongside the potential valley Hall effects. The non-trivial topological character is quantified in terms of theZ2invariant asν= 1 and Chern numberC= 1. Also, for practical purposes, we report that,hBN/TeO/hBN quantum-wells can be strain engineered to realize a sizeable non-trivial gap (≈0.11 eV). We finally conclude that, functionalization of group VI elemental monolayer with oxygen gives rise to, exotic quantum properties which are robust against surface oxidation and degradations while providing viable electronic degrees of freedom for spintronic/valleytronic applications.
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Affiliation(s)
- Raghottam M Sattigeri
- Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara-390002, Gujarat, India
| | - Prafulla K Jha
- Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara-390002, Gujarat, India
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27
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Wang Y, Chen F, Guo X, Liu J, Jiang J, Zheng X, Wang Z, Al-Makeen MM, Ouyang F, Xia Q, Huang H. In-Plane Phonon Anisotropy and Anharmonicity in Exfoliated Natural Black Arsenic. J Phys Chem Lett 2021; 12:10753-10760. [PMID: 34714072 DOI: 10.1021/acs.jpclett.1c03218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Group-VA two-dimensional layered materials in a puckered honeycomb structure exhibit strong in-plane anisotropy and have emerged as new platforms for novel devices. Here, we report on systematic Raman investigations on exfoliated b-As flakes on the Ag1 and Ag2 polarization dependence on their symmetry, excitation wavelength, and flake thickness. The intensity maximums of both phonons are corrected in the b-As armchair direction under 633 nm excitation regardless of the flake thickness upon considering optical birefringence effects and interference effects. The intensity ratio of Ag1 to Ag2 modes under 532 nm excitation is useful for b-As crystalline orientation identification. Temperature-dependent Raman investigations reveal the linearly anharmonic behaviors of both phonons in the range from 173 to 293 K and a slightly greater first-order temperature coefficient in the zigzag direction. Our findings give deep insight into the in-plane phonon anisotropy and anharmonicity of b-As and provide a step toward future device applications.
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Affiliation(s)
- Yongsong Wang
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Fengming Chen
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Xiao Guo
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Jinxin Liu
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Junjie Jiang
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Xiaoming Zheng
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Zihan Wang
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Mansour M Al-Makeen
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Fangping Ouyang
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Qinglin Xia
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Han Huang
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- School of Physics and Electronics, Hunan Key Laboratory of Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
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28
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Choi HK, Cha J, Choi CG, Kim J, Hong S. Effect of Point Defects on Electronic Structure of Monolayer GeS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2960. [PMID: 34835724 PMCID: PMC8618743 DOI: 10.3390/nano11112960] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Revised: 10/23/2021] [Accepted: 10/23/2021] [Indexed: 11/16/2022]
Abstract
Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was found that the bandgap of GeS with substitutional atoms is close to that of pristine GeS, while the bandgap of GeS with Ge or S vacancies was smaller than that of pristine GeS. In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Defects affect the piezoelectric properties depending on vacancies or substitutional atoms. Especially, GeS with substitutional atoms has almost the same piezoelectric stress coefficients eij as pristine GeS while having lower piezoelectric strain coefficients dij but still much higher than other 2D materials. It is therefore concluded that Sn can effectively heal Ge vacancy in GeS, keeping high piezoelectric strain coefficients.
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Affiliation(s)
| | | | | | | | - Suklyun Hong
- Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea; (H.-K.C.); (J.C.); (C.-G.C.); (J.K.)
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29
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Zhao F, Cao T, Louie SG. Topological Phases in Graphene Nanoribbons Tuned by Electric Fields. PHYSICAL REVIEW LETTERS 2021; 127:166401. [PMID: 34723587 DOI: 10.1103/physrevlett.127.166401] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Accepted: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. We show, through first-principles calculations, that by applying an experimentally accessible transverse electric field, certain boron and nitrogen periodically codoped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valence-band states to the electric field. With a spatially varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topological junction states, each may be occupied with charge or spin. Our findings not only show that electric field may be used as an easy tuning knob for topological phases in quasi-one-dimensional systems, but also provide new design principles for future GNR-based quantum electronic devices through their topological characters.
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Affiliation(s)
- Fangzhou Zhao
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
| | - Ting Cao
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA
| | - Steven G Louie
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
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30
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Bhuvaneswari R, Nagarajan V, Chandiramouli R. Red tricycle phosphorene nanoribbon as a removing medium of sulfadiazine and sulfamethoxazole molecules based on first-principles studies. J Mol Liq 2021. [DOI: 10.1016/j.molliq.2021.116294] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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31
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Nadeem M, Di Bernardo I, Wang X, Fuhrer MS, Culcer D. Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect. NANO LETTERS 2021; 21:3155-3161. [PMID: 33780625 DOI: 10.1021/acs.nanolett.1c00378] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The subthreshold swing is the critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kBT ln(10)/q. Here, we demonstrate that the subthreshold swing of a topological transistor in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a noninteracting system by modulating the Rashba spin-orbit interaction. By developing a theoretical framework for quantum spin Hall materials with honeycomb lattices, we show that the Rashba interaction can reduce the subthreshold swing by more than 25% compared to Boltzmann's limit in currently available materials but without any fundamental lower bound, a discovery that can guide future material design and steer the engineering of topological quantum devices.
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Affiliation(s)
- Muhammad Nadeem
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales 2525, Australia
| | - Iolanda Di Bernardo
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Xiaolin Wang
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, New South Wales 2525, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales 2525, Australia
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia
| | - Dimitrie Culcer
- School of Physics, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales, Sydney 2052, Australia
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32
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Di Bernardo I, Hellerstedt J, Liu C, Akhgar G, Wu W, Yang SA, Culcer D, Mo SK, Adam S, Edmonds MT, Fuhrer MS. Progress in Epitaxial Thin-Film Na 3 Bi as a Topological Electronic Material. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005897. [PMID: 33538071 DOI: 10.1002/adma.202005897] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 09/24/2020] [Indexed: 06/12/2023]
Abstract
Trisodium bismuthide (Na3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.
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Affiliation(s)
- Iolanda Di Bernardo
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Jack Hellerstedt
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Chang Liu
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Golrokh Akhgar
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Dimitrie Culcer
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales, 2052, Australia
- School of Physics, University of New South Wales, Sydney, New South Wales, 2052, Australia
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Shaffique Adam
- Yale-NUS College, 16 College Ave West, Singapore, 138527, Singapore
| | - Mark T Edmonds
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria, 3800, Australia
| | - Michael S Fuhrer
- Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria, 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria, 3800, Australia
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33
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Guo X, Zhang L, Chen J, Zheng X, Zhang L. Gate tunable self-powered few-layer black phosphorus broadband photodetector. Phys Chem Chem Phys 2021; 23:399-404. [PMID: 33315026 DOI: 10.1039/d0cp05292b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Utilizing the unique gate induced giant stark effect in few-layer black phosphorus (BP), we theoretically propose a broadband photodetector device based on pure few-layer BP using atomic first-principles calculations. By applying a vertical gate voltage in the few-layer BP, the intrinsic inversion symmetry of the system can be broken. We found that the photocurrent can be generated via the photogalvanic (or photovoltaic) effect (PGE) without the need for an external bias voltage, which means the gated few-layer BP photodetector is self-powered and the dark current can be greatly suppressed. Most importantly, due to the giant stark effect of the gated few-layer BP, the photodetection range can be well controlled and further enlarged from the mid-infrared range (MIR) to the far-infrared range (FIR). Furthermore, the few-layer BP based photodetector device also presents high polarization sensitivity with extinction ratios up to 104 and a large anisotropic photoresponse. Our numerical findings pave a feasible way for the few-layer BP's novel application in self-powered and well-controlled broadband photodetectors.
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Affiliation(s)
- Xiaofei Guo
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Theoretical Physics, Shanxi University, Taiyuan 030006, China.
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Wu B, Quhe R, Yang J, Liu S, Shi J, Lu J, Du H. High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe
2. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000238] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Baochun Wu
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 P. R. China
| | - Jie Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Junjie Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China
| | - Honglin Du
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
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Hu G, Hu J. Topological transition in monolayer blue phosphorene with transition-metal adatom under strain. CHINESE J CHEM PHYS 2020. [DOI: 10.1063/1674-0068/cjcp2005061] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Ge Hu
- School of Physical Science and Technology & Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Jun Hu
- School of Physical Science and Technology & Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
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Lan C, Shi Z, Cao R, Li C, Zhang H. 2D materials beyond graphene toward Si integrated infrared optoelectronic devices. NANOSCALE 2020; 12:11784-11807. [PMID: 32462161 DOI: 10.1039/d0nr02574g] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.
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Affiliation(s)
- Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
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Narimani M, Yalameha S, Nourbakhsh Z. High thermoelectric efficiency of LaX (X = Sb, Bi) two dimensional topological insulators. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:255501. [PMID: 32209738 DOI: 10.1088/1361-648x/ab6046] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Topological insulators with novel surfaces or edge states are the topological nature sequel of bulk electronic wave functions of these materials. The observed signatures in the electronic structure of topological insulators can make them excellent candidates for thermoelectric materials. Low dimensional materials such as phosphorene and Bi2Te3 nanowire have been confirmed to be desirable for the design of devices with high thermoelectric performance. So in this work, the phonon modes, formation energy and cohesive energy of LaX (X = Sb, Bi) monolayers are first calculated and investigated. Then the band order of these monolayers is investigated by the band structure calculations and the topological phase of these monolayers is proved by using the calculation of Z 2 topological invariant. The energy band gap and the band inversion strength of these monolayers are evaluated under in-plane strains. Also, the effect of different temperatures and in-plane strains on the thermoelectric performance of LaX monolayers is studied. The results show the high thermoelectric efficiency and d-p topological band inversion of these monolayers under compressive strains.
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Wu JY, Su WP, Gumbs G. Anomalous magneto-transport properties of bilayer phosphorene. Sci Rep 2020; 10:7674. [PMID: 32376885 PMCID: PMC7203127 DOI: 10.1038/s41598-020-64106-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Accepted: 04/08/2020] [Indexed: 11/09/2022] Open
Abstract
The magneto-transport properties of phosphorene are investigated by employing the generalized tight-binding model to calculate the energy bands. For bilayer phosphorene, a composite magnetic and electric field is shown to induce a feature-rich Landau level (LL) spectrum which includes two subgroups of low-lying LLs. The two subgroups possess distinct features in level spacings, quantum numbers, as well as field dependencies. These together lead to anomalous quantum Hall (QH) conductivities which include a well-shape, staircase and composite quantum structures with steps having varying heights and widths. The Fermi energy-magnetic field-Hall conductivity (EF-Bz-σxy) and Fermi energy-electric field-Hall conductivity (EF-Ez-σxy) phase diagrams clearly exhibit oscillatory behaviors and cross-over from integer to half-integer QH effect. The predicted results should be verifiable by magneto-transport measurements in a dual-gated system.
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Affiliation(s)
- Jhao-Ying Wu
- Center of General Studies, National Kaohsiung University of Science and Technology, Kaohsiung, 811, Taiwan.
| | - Wu-Pei Su
- Department of Physics, University of Houston, Houston, Texas, USA
| | - Godfrey Gumbs
- Department of Physics and Astronomy, Hunter College at the City University of New York, New York, 10065, USA
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Wang AQ, Ye XG, Yu DP, Liao ZM. Topological Semimetal Nanostructures: From Properties to Topotronics. ACS NANO 2020; 14:3755-3778. [PMID: 32286783 DOI: 10.1021/acsnano.9b07990] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with large surface-to-volume ratio and easy field-effect gating, provide ideal platforms to detect and manipulate the topological quantum states. Exotic physical properties originating from these topological states endow topological semimetals attractive for future topological electronics (topotronics). For example, the linear energy dispersion relation is promising for broadband infrared photodetectors, the spin-momentum locking nature of topological surface states is valuable for spintronics, and the topological superconductivity is highly desirable for fault-tolerant qubits. For real-life applications, topological semimetals in the form of nanostructures are necessary in terms of convenient fabrication and integration. Here, we review the recent progresses in topological semimetal nanostructures and start with the quantum transport properties. Then topological semimetal-based electronic devices are introduced. Finally, we discuss several important aspects that should receive great effort in the future, including controllable synthesis, manipulation of quantum states, topological field effect transistors, spintronic applications, and topological quantum computation.
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Affiliation(s)
- An-Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Da-Peng Yu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Peking University, Beijing 100871, China
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Das B, Sen D, Mahapatra S. Tuneable quantum spin Hall states in confined 1T' transition metal dichalcogenides. Sci Rep 2020; 10:6670. [PMID: 32317660 PMCID: PMC7174349 DOI: 10.1038/s41598-020-63450-5] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2019] [Accepted: 03/26/2020] [Indexed: 11/09/2022] Open
Abstract
Investigation of quantum spin Hall states in 1T' phase of the monolayer transition metal dichalcogenides has recently attracted the attention for its potential in nanoelectronic applications. While most of the theoretical findings in this regard deal with infinitely periodic crystal structures, here we employ density functional theory calculations and [Formula: see text] Hamiltonian based continuum model to unveil the bandgap opening in the edge-state spectrum of finite width molybdenum disulphide, molybdenum diselenide, tungsten disulphide and tungsten diselenide. We show that the application of a perpendicular electric field simultaneously modulates the band gaps of bulk and edge-states. We further observe that tungsten diselenide undergoes a semi-metallic intermediate state during the phase transition from topological to normal insulator. The tuneable edge conductance, as obtained from the Landauer-Büttiker formalism, exhibits a monotonous increasing trend with applied electric field for deca-nanometer molybdenum disulphide, whereas the trend is opposite for other cases.
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Affiliation(s)
- Biswapriyo Das
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bangalore, 560012, India.
| | - Diptiman Sen
- Centre for High Energy Physics, Indian Institute of Science (IISc) Bangalore, Bangalore, 560012, India
| | - Santanu Mahapatra
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc) Bangalore, Bangalore, 560012, India
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Luo Y, Zhao G, Wang S. The electron-phonon scattering and carrier mobility in monolayer AsSb. Phys Chem Chem Phys 2020; 22:5688-5692. [PMID: 32103226 DOI: 10.1039/c9cp06945c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Through first-principles calculations, the electron-phonon scattering of two-dimensional monolayer AsSb is investigated. The Boltzmann transport equation is used to compute the phonon limited carrier mobility. We find that the optical phonon scattering rates are much larger than acoustic ones around the valence band maximum (VBM) and the conduction band minimum (CBM). The phonon-decomposed scattering results show that transverse optical (TO) phonon modes dominate the scattering around VBM, while longitudinal and out-of-plane acoustic modes contribute mostly to the scattering at higher energy. TO phonon modes dominate the scattering for electrons over all energy level, and the electron-phonon matrix element analysis verified the results. Finally, we observed that the largest mean free paths for hot holes and hot electrons are 20 nm and 8 nm, respectively. That is the best range to extract the hot holes and hot electrons. More interestingly, owing to the in-pane net dipole moment of AsSb, the intrinsic electron/hole mobility of AsSb are 38/50 cm2 V-1 s-1, which are less than monolayer arsenene and antimonene.
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Affiliation(s)
- Ying Luo
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
| | - Guojun Zhao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
| | - Shudong Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
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Jeong K, Park H, Chae J, Sim KI, Yang WJ, Kim JH, Hong SB, Kim JH, Cho MH. Topological Phase Control of Surface States in Bi 2Se 3 via Spin-Orbit Coupling Modulation through Interface Engineering between HfO 2-X. ACS APPLIED MATERIALS & INTERFACES 2020; 12:12215-12226. [PMID: 32073823 DOI: 10.1021/acsami.9b17555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The direct control of topological surface states in topological insulators is an important prerequisite for the application of these materials. Conventional attempts to utilize magnetic doping, mechanical tuning, structural engineering, external bias, and external magnetic fields suffer from a lack of reversible switching and have limited tunability. We demonstrate the direct control of topological phases in a bismuth selenide (Bi2Se3) topological insulator in 3 nm molecular beam epitaxy-grown films through the hybridization of the topological surface states with the hafnium (Hf) d-orbitals in the topmost layer of an underlying oxygen-deficient hafnium oxide (HfO2) substrate. The higher angular momentum of the d-orbitals of Hf is hybridized strongly by topological insulators, thereby enhancing the spin-orbit coupling and perturbing the topological surface states asymmetry in Bi2Se3. As the oxygen defect is cured or generated reversibly by external electric fields, our research facilitates the complete electrical control of the topological phases of topological insulators by controlling the defect density in the adjacent transition metal oxide. In addition, this mechanism can be applied in other related topological materials such as Weyl and Dirac semimetals in future endeavors to facilitate practical applications in unit-element devices for quantum computing and quantum communication.
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Affiliation(s)
- Kwangsik Jeong
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Hanbum Park
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jimin Chae
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Kyung-Ik Sim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Won Jun Yang
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jong-Hoon Kim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Seok-Bo Hong
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jae Hoon Kim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Mann-Ho Cho
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
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Jung SW, Ryu SH, Shin WJ, Sohn Y, Huh M, Koch RJ, Jozwiak C, Rotenberg E, Bostwick A, Kim KS. Black phosphorus as a bipolar pseudospin semiconductor. NATURE MATERIALS 2020; 19:277-281. [PMID: 32015535 DOI: 10.1038/s41563-019-0590-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Accepted: 12/15/2019] [Indexed: 06/10/2023]
Abstract
Semiconductor devices rely on the charge and spin of electrons, but there is another electronic degree of freedom called pseudospin in a two-level quantum system1 such as a crystal consisting of two sublattices2. A potential way to exploit the pseudospin of electrons in pseudospintronics3-5 is to find quantum matter with tunable and sizeable pseudospin polarization. Here, we propose a bipolar pseudospin semiconductor, where the electron and hole states have opposite net pseudospin polarization. We experimentally identify such states in anisotropic honeycomb crystal-black phosphorus. By sublattice interference of photoelectrons, we find bipolar pseudospin polarization greater than 95% that is stable at room temperature. This pseudospin polarization is identified as a consequence of Dirac cones merged in the highly anisotropic honeycomb system6,7. The bipolar pseudospin semiconductor, which is a pseudospin analogue of magnetic semiconductors, is not only interesting in itself, but also might be useful for pseudospintronics.
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Affiliation(s)
- Sung Won Jung
- Department of Physics, Yonsei University, Seoul, Korea
- Diamond Light Source, Didcot, UK
| | - Sae Hee Ryu
- Department of Physics, Yonsei University, Seoul, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Woo Jong Shin
- Department of Physics, Yonsei University, Seoul, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Yeongsup Sohn
- Department of Physics, Yonsei University, Seoul, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Minjae Huh
- Department of Physics, Yonsei University, Seoul, Korea
- Department of Physics, Pohang University of Science and Technology, Pohang, Korea
| | - Roland J Koch
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Chris Jozwiak
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Eli Rotenberg
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Aaron Bostwick
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Keun Su Kim
- Department of Physics, Yonsei University, Seoul, Korea.
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Antonatos N, Bouša D, Kovalska E, Sedmidubský D, Růžička K, Vrbka P, Veselý M, Hejtmánek J, Sofer Z. Large-Scale Production of Nanocrystalline Black Phosphorus Ceramics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:7381-7391. [PMID: 31942787 DOI: 10.1021/acsami.9b13362] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Black phosphorus is currently among the most explored two-dimensional (2D) materials. Currently, the synthesis methods are dominantly based on vapor-phase growth of black phosphorus. In this manuscript, we demonstrate large-scale synthesis of black phosphorus by rapid high-pressure transition of red phosphorus. The high-pressure conversion of red phosphorus led to high-density nanocrystalline black phosphorus ceramics. The resulting material was explored in detail including structural and morphological characterization in addition to thermal and electrical transport and basic thermophysical properties. The nanocrystalline black phosphorus can be employed for large-scale production of stable few/single-layer black phosphorus colloidal solutions in various solvents.
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Affiliation(s)
- Nikolas Antonatos
- Department of Inorganic Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Daniel Bouša
- Department of Inorganic Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Evgeniya Kovalska
- Department of Inorganic Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - David Sedmidubský
- Department of Inorganic Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Květoslav Růžička
- Department of Physical Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Pavel Vrbka
- Department of Physical Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Martin Veselý
- Department of Organic Technology , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
| | - Jiří Hejtmánek
- Institute of Physics of the Czech Academy of Sciences , v.v.i., Cukrovarnická 112/10 , 162 00 Prague 6, Prague , Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry , University of Chemistry and Technology Prague , Technická 5 , 166 28 Prague 6, Prague , Czech Republic
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Ruan Y, Huang L, Yang Y, Xu G, Zhong K, Huang Z, Zhang JM. Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field. Phys Chem Chem Phys 2020; 22:3867-3874. [DOI: 10.1039/c9cp06206h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.
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Affiliation(s)
- Yurong Ruan
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Lu Huang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Yanmin Yang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Guigui Xu
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Kehua Zhong
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Zhigao Huang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
| | - Jian-Min Zhang
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials
- College of Physics and Energy
- Fujian Normal University
- Fuzhou 350117
- China
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Campos T, Toloza Sandoval MA, Diago-Cisneros L, Sipahi GM. Electrical tuning of helical edge states in topological multilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:495501. [PMID: 31382252 DOI: 10.1088/1361-648x/ab38a1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states of matter. Such structures allow the band-gap inversion with electrons and holes confined in adjacent layers, providing a fertile ground to tune the corresponding topological properties. Using a full 3D eight-band [Formula: see text] method we investigate the inverted band structure of GaSb/InAs/GaSb and InAs/GaSb/InAs multilayers and the behavior of the helical edge states, under the influence of an electric field applied along the growth direction. By tuning the electric field modulus, we induce the change of the energy levels of both conduction and valence bands, resulting in a quantum spin Hall insulator phase where the helical edge states are predominantly confined in the GaSb layer. In particular, we found that InAs/GaSb/InAs has a large hybridization gap of about [Formula: see text] and, therefore, are promising to observe massless Dirac fermions with a large Fermi velocity. Our comprehensive characterization of GaSb/InAs multilayers creates a basis platform upon which further optimization of III-V heterostructures can be contrasted.
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Affiliation(s)
- T Campos
- Department of Physics, State University of New York at Buffalo, Buffalo, NY 14260, United States of America. Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, São Paulo 13566-590, Brazil
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Ma H, Hu W, Yang J. Control of highly anisotropic electrical conductance of tellurene by strain-engineering. NANOSCALE 2019; 11:21775-21781. [PMID: 31701993 DOI: 10.1039/c9nr05660b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Tailoring the electronic anisotropy of two-dimensional (2D) semiconductors with strain-engineering is critical in nanoelectronics. Recently, 2D tellurene has been predicted theoretically and fabricated experimentally. It has potential applications in nanoelectronics, in particular, β-phase tellurene (β-Te) shows a desirable direct band gap (1.47 eV), high carrier mobility (2.58 × 103 cm2 V-1 s-1) and high stability under ambient conditions. In this work, we demonstrated, with first-principles density functional theory calculations, that the highly anisotropic electron mobility and electrical conductance of β-Te can be controlled by strain-engineering. The direction of electrical conductance of β-Te can be changed from the armchair to the zigzag direction at the strain between -1% and 0%. Meanwhile, we found that the bandgap of β-Te under strain experiences an indirect-direct transition with a conduction band minimum (CBM) shift from the X to Γ point. The significant dispersion of the bottom of the conduction bands along the Γ-Y direction switches to the X-Γ direction under uniaxial or biaxial strain which makes the rotation of the effective masses tensor. The qualitative rotation of the spatial anisotropic electron effective masses tensor by 90° also rotates the direction of the electrical conduction as the carrier mobility is inversely dependent on the effective masses. On the another hand, we also found that the deformation potential constant also plays an important role in the rotation of electrical conductance anisotropy. While anisotropic conductance of hole is impregnable under strain. In order to verify that β-Te can sustain large strain, we studied its stability and mechanical properties and found that β-Te shows superior mechanical flexibility with a small Young's modulus (27.46 GPa (armchair)-61.99 GPa (zigzag)) and large anisotropic strain-stress (12.89 N m-1 at the strain of 38% along armchair direction and 25.72 N m-1 at the strain of 26% along zigzag direction). The high anisotropic carrier mobility and superior mechanical flexibility of β-Te make it a promising candidate for flexible nanoelectronics.
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Affiliation(s)
- Huanhuan Ma
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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Xu Y, Chen YR, Wang J, Liu JF, Ma Z. Quantized Field-Effect Tunneling between Topological Edge or Interface States. PHYSICAL REVIEW LETTERS 2019; 123:206801. [PMID: 31809113 DOI: 10.1103/physrevlett.123.206801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2019] [Revised: 09/08/2019] [Indexed: 06/10/2023]
Abstract
We study the tunneling through a two-dimensional topological insulator with topologically protected edge states. It is shown that the tunneling probability can be quantized in a broad parameter range, 0 or 1, tuned by an applied transverse electric field. Based on this field-effect tunneling, we propose two types of topological transistors based on helical edge or interface states of quantum spin Hall insulators separately. The quantized tunneling conductance is obtained and shown to be robust against nonmagnetic disorders. Usually, the topological transition is necessary in the operation of topological transistors. These findings provide a new strategy for the design of topological transistors without topological transitions.
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Affiliation(s)
- Yong Xu
- School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yan-Ru Chen
- School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun Wang
- Department of Physics, Southeast University, Nanjing 210096, China
| | - Jun-Feng Liu
- School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhongshui Ma
- School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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Khoa DQ, Phong TC, Lam VT, Hoi BD. Combined temperature- and magnetic field-induced optical responses of phosphorene. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.05.012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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