Direct growth of bilayer graphene on SiO₂ substrates by carbon diffusion through nickel

Graphene-coated nickel in biological environments: role of structural defects

Graphene (Gr) is a promising material for addressing microbially induced corrosion (MIC) issues that cause staggering economic losses, estimated at nearly $55 billion annually in the US alone. However, structural defects including edges, grain boundaries, and cracks can compromise its performance in aggressive biological environments. Owing to the technological relevance of nickel (Ni), its key roles in biological mechanisms, and the strong hybridization of d-electrons of Ni with Gr π-orbitals, we explore the effects of the key defects in Gr/Ni exposed to archetype sulfate-reducing bacteria (SRB). Electrochemical and spectroscopy tests revealed that the grain boundaries play a stronger role than cracks. The edges and grain boundaries in as-grown Gr on Ni (dGr/Ni) aggravated corrosion by two-fold, while the cracks in the transferred counterpart that lacked these defects improved corrosion resistance by 2-fold. A combination of biotic and abiotic studies corroborated the unique roles of grain boundaries as sulfur reservoirs to promote the attachment of sessile SRB cells and subsequent redox reactions. Analysis of distinct biogenic products confirmed the role of grain boundaries on pitting corrosion. These insights can guide the rational design of graphene coatings specifically for biological environments prone to MIC.

Silicon Radical-Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface

Due to the manufacturability of highly well-defined structures and wide-range versatility in its microstructure, SiO2 is an attractive template for synthesizing graphene frameworks with the desired pore structure. However, its intrinsic inertness constrains the graphene formation via methane chemical vapor deposition. This work overcomes this challenge by successfully achieving uniform graphene coating on a trimethylsilyl-modified SiO2 (denote TMS-MPS). Remarkably, the onset temperature for graphene growth dropped to 720 °C for the TMS-MPS, as compared to the 885 °C of the pristine SiO2. This is found to be mainly from the Si radicals formed from the decomposition of the surface TMS groups. Both experimental and computational results suggest a strong catalytic effect of the Si radicals on the CH4 dissociation. The surface engineering of SiO2 templates facilitates the synthesis of high-quality graphene sheets. As a result, the graphene-coated SiO2 composite exhibits a high electrical conductivity of 0.25 S cm-1. Moreover, the removal of the TMP-MPS template has released a graphene framework that replicates the parental TMS-MPS template on both micro- and nano- scales. This study provides tremendous insights into graphene growth chemistries as well as establishes a promising methodology for synthesizing graphene-based materials with pre-designed microstructures and porosity.

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current-voltage (I-V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5-300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Selective area multilayer graphene synthesis using resistive nanoheater probe

Graphene has been a material of interest due to its versatile properties and wide variety of applications. However, production has been one of the most challenging aspects of graphene and multilayer graphene (MLG). Most synthesis techniques require elevated temperatures and additional steps to transfer graphene or MLG to a substrate, which compromises the integrity of the film. In this paper, metal-induced crystallization is explored to locally synthesize MLG directly on metal films, creating an MLG-metal composite and directly on insulating substrates with a moving resistive nanoheater probe at much lower temperature conditions (~ 250 °C). Raman spectroscopy shows that the resultant carbon structure has properties of MLG. The presented tip-based approach offers a much simpler MLG fabrication solution by eliminating the photolithographic and transfer steps of MLG.

In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 °C for Wafer-Scale Optoelectronic Device Application

The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V₂ O₅ ) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V₂ O₅ film. Density functional theory is used to quantitatively analyze the catalytic effect of V₂ O₅ . Due to the high resistance property of V₂ O₅ at room temperature, the obtained graphene can be directly used in devices with V₂ O₅ as an intercalation layer. A wafer-scale graphene-V₂ O₅ -Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W^-1 at 0 V bias and 420 mA W^-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.

Recent advances in carbon-based materials for high-performance perovskite solar cells: gaps, challenges and fulfillment

Presently, carbon-based nanomaterials have shown tremendous potential for energy conversion applications. Especially, carbon-based materials have emerged as excellent candidates for the fabrication of halide perovskite-based solar cells, which may lead to their commercialization. In the last decade, PSCs have rapidly developed, and these hybrid devices demonstrate a comparable performance to silicon-based solar cells in terms of power conversion efficiency (PCE). However, PSCs lag behind silicon-based solar cells due to their poor stability and durability. Generally, noble metals such gold and silver are employed as back electrode materials during the fabrication of PSCs. However, the use of these expensive rare metals is associated with some issues, urgently necessitating the search for cost-effective materials, which can realize the commercial applications of PSCs due to their interesting properties. Thus, the present review shows how carbon-based materials can become the main candidates for the development of highly efficient and stable PSCs. Carbon-based materials such as carbon black, graphite, graphene nanosheets (2D/3D), carbon nanotubes (CNTs), carbon dots, graphene quantum dots (GQDs) and carbon nanosheets show potential for the laboratory and large-scale fabrication of solar cells and modules. Carbon-based PSCs can achieve efficient and long-term stability for both rigid and flexible substrates because of their high conductivity and excellent hydrophobicity, thus showing good results in comparison to metal electrode-based PSCs. Thus, the present review also demonstrates and discusses the latest state-of-the-art and recent advances for carbon-based PSCs. Furthermore, we present perspectives on the cost-effective synthesis of carbon-based materials for the broader view of the future sustainability of carbon-based PSCs.

In-Situ Growth of Graphene Films to Improve Sensing Performances

Graphene films made by chemical vapor deposition (CVD) are a popular method to modify sensors by virtue of large-scale and reproducibility, but suffer from various surface contamination and structural defects induced during transfer procedures. In-situ growth of graphene films is proposed in this review article to improve sensing performance. Root causes of the surface contamination and structural defects are revealed with several common transfer methods. In-situ approaches are introduced and compared, growing graphene films with clean surfaces and few defects. This allows graphene film to display superior sensing performance for sensor applications. This work may reasonably be expected to offer a good avenue for synthesis of graphene films applicable for sensing applications.

Combinatorial Cu-Ni Alloy Thin-Film Catalysts for Layer Number Control in Chemical Vapor-Deposited Graphene

We synthesized a combinatorial library of CuxNi1−x alloy thin films via co-sputtering from Cu and Ni targets to catalyze graphene chemical vapor deposition. The alloy morphology, composition, and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and X-ray diffraction (XRD), respectively. Subsequently, the CuxNi1−x alloy thin films were used to grow graphene in a CH4-Ar-H2 ambient at atmospheric pressure. The underlying rationale is to adjust the CuxNi1−x composition to control the graphene. Energy dispersive x-ray spectroscopy (EDS) analysis revealed that a continuous gradient of CuxNi1−x (25 at. % < x < 83 at.%) was initially achieved across the 100 mm diameter substrate (~0.9%/mm composition gradient). The XRD spectra confirmed a solid solution was realized and the face-centered cubic lattice parameter varied from ~3.52 to 3.58 A˙, consistent with the measured composition gradient, assuming Vegard’s law. Optical microscopy and Raman analysis of the graphene layers suggest single layer growth occurs with x > 69 at.%, bilayer growth dominates from 48 at.% < x < 69 at.%, and multilayer (≥3) growth occurs for x < 48 at.%, where x is the Cu concentration. Finally, a large area of bi-layer graphene was grown via a CuxNi1−x catalyst with optimized catalyst composition and growth temperature.

Controllable growth of two-dimensional materials on noble metal substrates

Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.

Designing New-Generation Piezoelectric Transducers by Embedding Superior Graphene-Based Thermal Regulators

Cascaded-piezoelectric-transducers (CPETs) is a key component in modern energy-conversion fields, possessing versatile applications in ultrasonic scalpels, acoustic levitation, and sonar. However, serious self-heating inevitably occurs inside high-power CPETs, severely limiting their practical applications in broader fields. To tackle this, multidirectional heat-escape channels of multidimensional (multi-D, 3D/2D) graphene films are introduced in designing new-type thermal regulators. A porous AlN-ceramic thermal-sink is creatively selected as a template for directly synthesizing graphene via a two-step chemical vapor deposition strategy. This perfect combination of 3D/2D-graphene and the AlN ceramic can integrate their complementary advantages in uniformizing, transmitting, and releasing heat. Amazingly, in the new-generation CPETs embedded with these graphene-based thermal regulators, the self-heating-induced temperature rise can be substantially reduced by ≈60% (far exceeding actual demand standard). As another kernel parameter, electroacoustic-energy-conversion efficiency is dramatically improved in the new-generation CPETs. Briefly, this research realizes the first synthesis of a novel multi-D-graphene/AlN-ceramic hybrid, and propels its brand-new application directions in new-generation energy-conversion- and thermal-management-related territories.

A Review of Graphene: Material Synthesis from Biomass Sources

Single-atom-thick graphene is a particularly interesting material in basic research and applications owing to its remarkable electronic, mechanical, chemical, thermal, and optical properties. This leads to its potential use in a multitude of applications for improved energy storage (capacitors, batteries, and fuel cells), energy generation, biomedical, sensors or even as an advanced membrane material for separations. This paper provided an overview of research in graphene, in the area of synthesis from various sources specially from biomass, advanced characterization techniques, properties, and application. Finally, some challenges and future perspectives of graphene are also discussed.

Bottom-up synthesis of graphene films hosting atom-thick molecular-sieving apertures

Incorporation of a high density of molecular-sieving nanopores in the graphene lattice by the bottom-up synthesis is highly attractive for high-performance membranes. Herein, we achieve this by a controlled synthesis of nanocrystalline graphene where incomplete growth of a few nanometer-sized, misoriented grains generates molecular-sized pores in the lattice. The density of pores is comparable to that obtained by the state-of-the-art postsynthetic etching (10¹² cm^-2) and is up to two orders of magnitude higher than that of molecular-sieving intrinsic vacancy defects in single-layer graphene (SLG) prepared by chemical vapor deposition. The porous nanocrystalline graphene (PNG) films are synthesized by precipitation of C dissolved in the Ni matrix where the C concentration is regulated by controlled pyrolysis of precursors (polymers and/or sugar). The PNG film is made of few-layered graphene except near the grain edge where the grains taper down to a single layer and eventually terminate into vacancy defects at a node where three or more grains meet. This unique nanostructure is highly attractive for the membranes because the layered domains improve the mechanical robustness of the film while the atom-thick molecular-sized apertures allow the realization of large gas transport. The combination of gas permeance and gas pair selectivity is comparable to that from the nanoporous SLG membranes prepared by state-of-the-art postsynthetic lattice etching. Overall, the method reported here improves the scale-up potential of graphene membranes by cutting down the processing steps.

Layer exchange synthesis of multilayer graphene

Low-temperature synthesis of multilayer graphene (MLG) on arbitrary substrates is the key to incorporating MLG-based functional thin films, including transparent electrodes, low-resistance wiring, heat spreaders, and battery anodes in advanced electronic devices. This paper reviews the synthesis of MLG via the layer exchange (LE) phenomenon between carbon and metal from its mechanism to the possibility of device applications. The mechanism of LE is completely different from that of conventional MLG precipitation methods using metals, and the resulting MLG exhibits unique features. Modulation of metal species and growth conditions enables synthesis of high-quality MLG over a wide range of growth temperatures (350 °C-1000 °C) and MLG thicknesses (5-500 nm). Device applications are discussed based on the high electrical conductivity (2700 S cm^-1) of MLG and anode operation in Li-ion batteries. Finally, we discuss the future challenges of LE for MLG and its application to flexible devices.

Photolithographically-patterned C-MEMS graphene by carbon diffusion through nickel

In recent years the most studied carbon allotrope has been graphene, due to the outstanding properties that this two-dimensional material exhibits; however, it turns out to be a difficult material to produce, pattern, and transfer to a device substrate without contamination. Carbon microelectromechanical systems are a versatile technology used to create nano/micro carbon devices by pyrolyzing a patterned photoresist, making them highly attractive for industrial applications. Furthermore, recent works have reported that pyrolytic carbon material can be graphitized by the diffusion of carbon atoms through a transition metal layer. In this work we take advantage of the latter two methods in order to produce multilayer graphene by improving the molecular ordering of photolithographically-defined pyrolytic carbon microstructures, through the diffusion (annealing) of carbon atoms through nickel, and also to eliminate any further transfer process to a device substrate. The allotropic nature of the final carbon microstructures was inspected by Raman spectroscopy (AverageI_D/I_Gof 0.2348 ± 0.0314) and TEM clearly shows well-aligned lattice planes of 3.34 Å fringe separation. These results were compared to measurements made on pyrolytic carbon (AverageI_D/I_Gof 0.9848 ± 0.0235) to confirm that our method is capable of producing a patterned multilayer graphene material directly on a silicon substrate.

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.

3D Graphene Materials: From Understanding to Design and Synthesis Control

Carbon materials, with their diverse allotropes, have played significant roles in our daily life and the development of material science. Following 0D C₆₀ and 1D carbon nanotube, 2D graphene materials, with their distinctively fascinating properties, have been receiving tremendous attention since 2004. To fulfill the efficient utilization of 2D graphene sheets in applications such as energy storage and conversion, electrochemical catalysis, and environmental remediation, 3D structures constructed by graphene sheets have been attempted over the past decade, giving birth to a new generation of graphene materials called 3D graphene materials. This review starts with the definition, classifications, brief history, and basic synthesis chemistries of 3D graphene materials. Then a critical discussion on the design considerations of 3D graphene materials for diverse applications is provided. Subsequently, after emphasizing the importance of normalized property characterization for the 3D structures, approaches for 3D graphene material synthesis from three major types of carbon sources (GO, hydrocarbons and inorganic carbon compounds) based on GO chemistry, hydrocarbon chemistry, and new alkali-metal chemistry, respectively, are comprehensively reviewed with a focus on their synthesis mechanisms, controllable aspects, and scalability. At last, current challenges and future perspectives for the development of 3D graphene materials are addressed.

Opportunities and Challenges in Twisted Bilayer Graphene: A Review

Two-dimensional (2D) materials exhibit enhanced physical, chemical, electronic, and optical properties when compared to those of bulk materials. Graphene demands significant attention due to its superior physical and electronic characteristics among different types of 2D materials. The bilayer graphene is fabricated by the stacking of the two monolayers of graphene. The twisted bilayer graphene (tBLG) superlattice is formed when these layers are twisted at a small angle. The presence of disorders and interlayer interactions in tBLG enhances several characteristics, including the optical and electrical properties. The studies on twisted bilayer graphene have been exciting and challenging thus far, especially after superconductivity was reported in tBLG at the magic angle. This article reviews the current progress in the fabrication techniques of twisted bilayer graphene and its twisting angle-dependent properties.

Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors

Direct synthesis of thin-film carbon nanomaterials on oxide-coated silicon substrates provides a viable pathway for building a dense array of miniaturized (micron-scale) electrochemical sensors with high performance. However, material synthesis generally involves many parameters, making material engineering based on trial and error highly inefficient. Here, we report a two-pronged strategy for producing engineered thin-film carbon nanomaterials that have a nano-graphitic structure. First, we introduce a variant of the metal-induced graphitization technique that generates micron-scale islands of nano-graphitic carbon materials directly on oxide-coated silicon substrates. A novel feature of our material synthesis is that, through substrate engineering, the orientation of graphitic planes within the film aligns preferentially with the silicon substrate. This feature allows us to use the Raman spectroscopy for quantifying structural properties of the sensor surface, where the electrochemical processes occur. Second, we find phenomenological models for predicting the amplitudes of the redox current and the sensor capacitance from the material structure, quantified by Raman. Our results indicate that the key to achieving high-performance micro-sensors from nano-graphitic carbon is to increase both the density of point defects and the size of the graphitic crystallites. Our study offers a viable strategy for building planar electrochemical micro-sensors with high-performance.

On-site growth method of 3D structured multi-layered graphene on silicon nanowires

An experimental method is described in which a orderly 3D array of graphene sheets is grown to conform to the shape of an underlying nanowire (NW) substrate that remains on-site. The procedure uses a sacrificial nickel catalyst-based CVD growth process that is capable of producing graphene onto an insulating SiO₂ substrate. Nano-imprint silicon NWs serve both as the scaffolding for the catalyst and as the final underlying substrate. The graphene is polycrystalline and multi-layered as expected from this nickel catalyzed growth method. This presents a novel and quick method that can be used to produce conductive graphene sheets in precise shapes and configurations seen in complex device applications but which are difficult to produce with current transfer methods. The geometry of the nanostructured substrate itself contributes to the on-site growth method by making it difficult for the graphene to wash off during wet etching. The SiNWs used in this research have increased surface area and a light trapping effect that, in combination with the graphene, can be used in future sensor and photovoltaic device applications.

Ethanol-Precursor-Mediated Growth and Thermochromic Applications of Highly Conductive Vertically Oriented Graphene on Soda-Lime Glass

Direct growth of vertically oriented graphene (VG) nanowalls on soda-lime glass has practical significance in extending the application of graphene to daily-life-related areas, such as gas sensors and conductive electrodes, via combining their complementary properties and applications. However, VG films derived by low-temperature deposition (e.g., on glass) usually present relatively low conductivity and optical transparency. To tackle this issue, an ethanol-precursor-based, radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route for the synthesis of VG nanowalls is developed in this research, at around the softening temperature of soda-lime glass (∼600 °C) templates. The average sheet resistance, i.e., ∼2.4 kΩ·sq^-1 (at transmittance ∼81.6%), is only one-half of that achieved by a traditional methane-precursor-based PECVD route. Based on the highly conductive and optically transparent VG/glass, as well as its scalable size up to 25 in. scale, high-performance reversible thermochromic devices were successfully constructed using VG/glass as transparent heaters. Hereby, this work should propel the scalable synthesis and applications of highly conductive VG films on glass in next-generation transparent electronics and switchable windows.

β-Cyclodextrin-Immobilized Ni/Graphene Electrode for Electrochemical Enantiorecognition of Phenylalanine

In this work, a Ni/graphene (Ni/G) electrode was designed and fabricated by plasma-enhanced chemical vapor deposition (PECVD) for the ultrasensitive recognition of d- and l-phenylalanine. Through a single-step PECVD process, the Ni/G electrode can achieve better hydrophilicity and larger catalytic surface area, which is beneficial for the electrochemical recognition of bio-objects. After surface modification with β-cyclodextrin, the Ni/G electrode can distinguish d-phenylalanine from l-phenylalanine according to a 0.09 V peak shift in differential pulse voltammetry tests. Moreover, this Ni/G electrode achieved a detection limit as low as 1 nM and a wide linear range from 1 nM to 10 mM toward l-phenylalanine, with great storage stability and working stability.

Impact of the carbon membrane inserted below Ni in the layer exchange of multilayer graphene

High-quality multilayer graphene on glass is achieved at a low temperature (400 °C).

Impact of Amorphous-C/Ni Multilayers on Ni-Induced Layer Exchange for Multilayer Graphene on Insulators

Layer exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high-quality multilayer graphene (MLG) on insulators at low temperatures. We investigated the effects of the a-C/Ni multilayer structure on the quality of MLG formed by Ni-induced layer exchange. The crystal quality and electrical conductivity of MLG improved dramatically as the number of a-C/Ni multilayers increased. A 600 °C-annealed sample in which 15 layers of 4-nm-thick a-C and 0.5-nm-thick Ni were laminated recorded an electrical conductivity of 1430 S/cm. This value is close to that of highly oriented pyrolytic graphite synthesized at approximately 3000 °C. This improvement is likely related to the bond weakening in a-C due to the screening effect of Ni. We expect that these results will contribute to low-temperature synthesis of MLG using a solid-phase reaction with metals.

Seed-Assisted Synthesis of Graphene Films on Insulating Substrate

Synthesizing graphene at a large-scale and of high quality on insulating substrate is a prerequisite for graphene applications in electronic devices. Typically, graphene is synthesized and then transferred to the proper substrate for subsequent device preparation. However, the complicated and skilled transfer process involves some issues such as wrinkles, residual contamination and breakage of graphene films, which will greatly degrade its performance. Direct synthesis of graphene on insulating substrates without a transfer process is highly desirable for device preparation. Here, we report a simple, transfer-free method to synthesize graphene directly on insulating substrates (SiO₂/Si, quartz) by using a Cu layer, graphene oxide and Poly (vinyl alcohol) as the catalyst, seeds and carbon sources, respectively. Atomic force microscope (AFM), scanning electronic microscope (SEM) and Raman spectroscopy are used to characterize the interface of insulating substrate and graphene. The graphene films directly grown on quartz glass can attain a high transmittance of 92.8% and a low sheet resistance of 620 Ω/square. The growth mechanism is also revealed. This approach provides a highly efficient method for the direct production of graphene on insulating substrates.

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

Metal-Catalyst-Free Growth of Patterned Graphene on SiO2 Substrates by Annealing Plasma-Induced Cross-Linked Parylene for Optoelectronic Device Applications

A metal-catalyst-free method for the direct growth of patterned graphene on an insulating substrate is reported in this paper. Parylene N is used as the carbon source. The surface molecule layer of parylene N is cross-linked by argon plasma bombardment. Under high-temperature annealing, the cross-linking layer of parylene N is graphitized into nanocrystalline graphene, which is a process that transforms organic to inorganic and insulation to conduction, while the parylene N molecules below the cross-linking layer decompose and vaporize at high temperature. Using this technique, the direct growth of a graphene film in a large area and with good uniformity is achieved. The thickness of the graphene is determined by the thickness of the cross-linking layer. Patterned graphene films can be obtained directly by controlling the patterns of the cross-linking region (lithography-free patterning). Graphene-silicon Schottky junction photodetectors are fabricated using the as-grown graphene. The Schottky junction shows good performance. The application of direct-grown graphene in optoelectronics is achieved with a great improvement of the device fabrication efficiency compared with transferred graphene. When illuminated with a 792 nm laser, the responsivity and specific detectivity of the detector measured at room temperature are 275.9 mA/W and 4.93 × 10⁹ cm Hz^1/2/W, respectively.

High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer

The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary substrates, which is a key to combining advanced electronic devices with carbon materials. We synthesize uniform MLG layers of various thicknesses, t, ranging from 5 nm to 200 nm using Ni-induced layer exchange at 800 °C. Raman and transmission electron microscopy studies show the crystal quality of MLG is relatively low for t ≤ 20 nm and dramatically improves for t ≥ 50 nm when we prepare a diffusion controlling Al₂O₃ interlayer between the C and Ni layers. Hall effect measurements reveal the carrier mobility for t = 50 nm is 550 cm²/Vs, which is the highest Hall mobility in MLG directly formed on an insulator. The electrical conductivity (2700 S/cm) also exceeds a highly oriented pyrolytic graphite synthesized at 3000 °C or higher. Synthesis technology of MLG with a wide range of thicknesses will enable exploration of extensive device applications of carbon materials.

In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source. After spin-coating the PMMA carbon source on the Si substrate, the Cu catalyst was deposited on PMMA/Si by electron beam evaporation. After that, graphene was directly synthesized on Si by decomposition and dehydrogenation of PMMA and the catalyzation effect of Cu under a simple thermal annealing process. Furthermore, under an optimized growth condition, monolayer graphene directly formed on the Si substrate was demonstrated. Utilizing the as-grown graphene/Si heterojunction, near-infrared photodetectors with high detectivity (∼1.1 × 10¹⁰ cm Hz^1/2 W⁻¹) and high responsivity (50 mA W⁻¹) at 1550 nm were directly fabricated without any post-transfer process. The proposed approach for directly growing graphene on silicon is highly scalable and compatible with present nano/micro-fabrication systems, thus promoting the application of graphene in microelectronic fields.

Direct integration of monolayer graphene on a silicon (Si) substrate is realized by a simple thermal annealing process, involving a top copper (Cu) layer as the catalyst and an inserted polymethylmethacrylate (PMMA) as the carbon source.

Metal Catalysts for Layer-Exchange Growth of Multilayer Graphene

Metal-induced layer-exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high-quality, uniform multilayer graphene (MLG) directly on an insulating material. Here, we investigated the effect of transition-metal species on the interaction between metals and a-C in the temperature range of 600-1000 °C. As a result, metals were classified into four groups: (1) layer exchange (Co, Ni, Cr, Mn, Fe, Ru, Ir, and Pt), (2) carbonization (Ti, Mo, and W), (3) local MLG formation (Pd), and (4) no graphitization (Cu, Ag, and Au). Some layer-exchange metals allowed for low-temperature MLG synthesis at 600 °C, whereas others allowed for high-quality MLG with a Raman G/D peak ratio of up to 8.3. Based on the periodic table, we constructed metal selection guidelines for growing MLG on an insulator, opening the door for applications that combine advanced electronic devices with carbon materials.

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h-BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal-catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

Highly Conductive Nitrogen-Doped Graphene Grown on Glass toward Electrochromic Applications

The direct synthesis of low sheet resistance graphene on glass can promote the applications of such intriguing hybrid materials in transparent electronics and energy-related fields. Chemical doping is efficient for tailoring the carrier concentration and the electronic properties of graphene that previously derived from metal substrates. Herein, we report the direct synthesis of 5 in. uniform nitrogen-doped (N-doped) graphene on the quartz glass through a designed low-pressure chemical vapor deposition (LPCVD) route. Ethanol and methylamine were selected respectively as precursor and dopant for acquiring predominantly graphitic-N-doped graphene. We reveal that by a precise control of growth temperature and thus the doping level the sheet resistance of graphene on glass can be as low as one-half that of nondoped graphene, accompanied by relative high crystal quality and transparency. Significantly, we demonstrate that this scalable, 5 in. uniform N-doped graphene glass can serve as excellent electrode materials for fabricating high performance electrochromic smart windows, featured with a much simplified device structure. This work should pave ways for the direct synthesis and application of the new type graphene-based hybrid material.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO₂ as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics

Graphene intrinsically hosts charge-carriers with ultrahigh mobility and possesses a high quantum capacitance, which are attractive attributes for nanoelectronic applications requiring graphene-on-substrate base architecture. Most of the current techniques for graphene production rely on the growth on metal catalyst surfaces, followed by a contamination-prone transfer process to put graphene on a desired dielectric substrate. Therefore, a direct graphene deposition process on dielectric surfaces is crucial to avoid polymer-adsorption-related contamination from the transfer process. Here, we present a chemical-diffusion mechanism of a process for transfer-free growth of graphene on silicon-based gate-dielectric substrates via low-pressure chemical vapor deposition. The process relies on the diffusion of catalytically produced carbon radicals through polycrystalline copper (Cu) grain boundaries and their crystallization at the interface of Cu and underneath silicon-based gate-dielectric substrates. The graphene produced exhibits low-defect multilayer domains ( L_a ∼ 140 nm) with turbostratic orientations as revealed by selected area electron diffraction. Further, graphene growth between Cu and the substrate was 2-fold faster on SiO₂/Si(111) substrate than on SiO₂/Si(100). The process parameters such as growth temperature and gas compositions (hydrogen (H₂)/methane (CH₄) flow rate ratio) play critical roles in the formation of high-quality graphene films. The low-temperature back-gating charge transport measurements of the interfacial graphene show density-independent mobility for holes and electrons. Consequently, the analysis of electronic transport at various temperatures reveals a dominant Coulombic scattering, a thermal activation energy (2.0 ± 0.2 meV), and two-dimensional hopping conduction in the graphene field-effect transistor. A band overlapping energy of 2.3 ± 0.4 meV is estimated by employing the simple two-band model.

Synthesis of transfer-free graphene on cemented carbide surface

Direct growth of spherical graphene with large surface area is important for various applications in sensor technology. However, the preparation of transfer-free graphene on different substrates is still a challenge. This study presents a novel approach for the transfer-free graphene growth directly on cemented carbide. The used simple thermal annealing induces an in-situ transformation of magnetron-sputtered amorphous silicon carbide films into the graphene matrix. The study reveals the role of Co, a binding phase in cemented carbides, in Si sublimation process, and its interplay with the annealing temperature in development of the graphene matrix. A detailed physico-chemical characterisation was performed by structural (XRD analysis and Raman spectroscopy with mapping studies), morphological (SEM) and chemical (EDS) analyses. The optimal bilayer graphene matrix with hollow graphene spheres on top readily grows at 1000 °C. Higher annealing temperature critically decreases the amount of Si, which yields an increased number of the graphene layers and formation of multi-layer graphene (MLG). The proposed action mechanism involves silicidation of Co during thermal treatment, which influences the existing chemical form of Co, and thus, the graphene formation and variations in a number of the formed graphene layers.

Direct growth of graphene on rigid and flexible substrates: progress, applications, and challenges

Graphene has recently been attracting considerable interest because of its exceptional conductivity, mechanical strength, thermal stability, etc. Graphene-based devices exhibit high potential for applications in electronics, optoelectronics, and energy harvesting. In this paper, we review various growth strategies including metal-catalyzed transfer-free growth and direct-growth of graphene on flexible and rigid insulating substrates which are "major issues" for avoiding the complicated transfer processes that cause graphene defects, residues, tears and performance degradation in graphene-based functional devices. Recent advances in practical applications based on "direct-grown graphene" are discussed. Finally, several important directions, challenges and perspectives in the commercialization of 'direct growth of graphene' are also discussed and addressed.

Scalable fabrication of the graphitic substrates for graphene-enhanced Raman spectroscopy

We propose direct synthesis of ultra-thin graphitic films on a dielectric substrate using sacrificial Ni catalyst layer, which significantly increases the crystallinity of the photoresist pyrolyzed at the temperature of 800 °C and above. A considerable amount of multilayer graphene in the photoresist film pyrolyzed in the presence of the Ni catalyst gives rise to an enhancement of the Raman signal of dye Sudan III molecules deposited on the substrate. We demonstrate comparable enhancement of the Raman signal from Sudan III molecules deposited on the fabricated graphitic substrate and those deposited on graphene, which was conventionally transferred to the silica substrate.

Trash to treasure: converting plastic waste into a useful graphene foil

Recycling of plastic waste has commercial value and practical significance for both environmental safety and recovery of resources. To realize trash recycling, a cheap, simple, and safe solid-state chemical vapor deposition method has been developed to convert a series of daily plastic wastes to a high quality graphene foil (GF) at a large scale. The GF possesses a high electrical conductivity of 3824 S·cm^-1, which is much higher than that of the conventional free-standing graphene film treated at an extremely high temperature of 2200-2500 °C. Further, the GF can act as various flexible elements such as a free-standing electrode in a foldable lithium-ion battery, which shows stable electrochemical performances. On the other hand, it presents a fast and ultra low-voltage responsivity to be used as a flexible electrothermal heater, which generates a temperature of up to 322.6 °C at a low input voltage of only 5 V. The convenient trash-to-treasure conversion of plastics to GF provides a unique pathway for waste recycling and opens new application possibilities of graphene in various fields.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

Compressive Strength Enhancement of Vertically Aligned Carbon Nanotube Forests by Constraint of Graphene Sheets

We fabricated a 3D sandwich hybrid material composed of graphene and vertically aligned carbon nanotube forests (VACNTs) using chemical vapor deposition. The graphene was first synthesized on Cu foil. Then it was transferred to a substrate which had a pre-deposited catalyst Fe film and a buffer film of Al₂O₃ for the growth of VACNTs. The VACNTs were grown underneath the graphene and lifted up the graphene. The graphene, with its edges anchored on the Al₂O₃, provided a constrained boundary condition for the VACNTs and hence affected the growth height and mechanical strength of the VACNTs. We prepared three groups of samples: VACNTs without graphene, VACNTs with graphene transferred once (1-Gr/VACNTs), and VACNTs with graphene transferred twice (2-Gr/VACNTs). A nano-indentation system was used to measure the reduced compressive modulus (Er) and hardness (H). The Er and H of Gr/VACNTs increased with the number of transfers of the anchored graphene. The 2-Gr/VACNTs had the largest Er and H, 23.8 MPa and 912 KPa, which are 6.6 times and 5.2 times those of VACNTs without the anchored graphene, respectively. In this work, we have demonstrated a simple method to increase the mechanical properties and suppress the height of VACNTs with the anchored graphene and number of transfers.

The physics and chemistry of graphene-on-surfaces

This review describes the major “graphene-on-surface” structures and examines the roles of their properties in governing the overall performance for specific applications.

Epitaxial nucleation of CVD bilayer graphene on copper

Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH₃ radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.

Local Controllable Laser Patterning of Polymers Induced by Graphene Material

Graphene has been successfully applied to the field of polymer laser patterning. As an efficient 1064 nm near-infrared (NIR) pulsed laser absorber, only 0.005 wt % (50 ppm) of graphene prepared by mechanical exfoliation endowed polymer materials with very good NIR pulsed laser patterning. Optical microscopy observed that the generated black patterns came from the local discoloration of the polymer surface subjected to the laser irradiation, and the depth of the discolored layer was determined to be within 221-348 μm. The X-ray photoelectron spectroscopy confirmed that the polymer surface discoloration was contributed by the local carbonization of polymers caused by graphene due to its high photothermal conversion capacity. Raman depth imaging successfully detected that the generated carbon in the discolored layer was composed of amorphous carbon and complex sp/sp²-carbon compounds containing C≡C or conjugated C═C/C≡C structures. This study also provides a simple guideline to fabricate laser-patterning polymer materials based on graphene. We believe that graphene has broad application prospects in the field of polymer laser patterning. Importantly, this work opens up a valuable, feasible direction for the practical application of this new carbon material.

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers

Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO₂/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 Ω/□, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO₂ and NH₃ gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.