1
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Wu G, Xiang L, Wang W, Yao C, Yan Z, Zhang C, Wu J, Liu Y, Zheng B, Liu H, Hu C, Sun X, Zhu C, Wang Y, Xiong X, Wu Y, Gao L, Li D, Pan A, Li S. Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system. Sci Bull (Beijing) 2024; 69:473-482. [PMID: 38123429 DOI: 10.1016/j.scib.2023.12.027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 11/23/2023] [Accepted: 12/04/2023] [Indexed: 12/23/2023]
Abstract
The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.
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Affiliation(s)
- Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Zeyi Yan
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Jiaxin Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yong Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengwei Hu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yizhe Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Xiong Xiong
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yanqing Wu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China; School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
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2
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Sutter P, Sutter E. Tunable 1D van der Waals Nanostructures by Vapor-Liquid-Solid Growth. Acc Chem Res 2023; 56:3235-3245. [PMID: 37938893 DOI: 10.1021/acs.accounts.3c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
ConspectusVapor-liquid-solid (VLS) growth using molten metal catalysts has traditionally been used to synthesize nanowires from different 3D-crystalline semiconductors. With their anisotropic structure and properties, 2D/layered semiconductors create additional opportunities for materials design when shaped into 1D nanostructures. In contrast to hexagonal 2D crystals such as graphene, h-BN, and transition metal dichalcogenides, which tend to roll up into nanotubes, VLS growth of layered group III and group IV monochalcogenides produces diverse nanowire and nanoribbon morphologies that crystallize in a bulk-like layered structure with nanometer-scale footprint and lengths exceeding tens of micrometers. In this Account, we discuss the achievable morphologies, the mechanisms governing key structural features, and the emerging functional properties of these 1D van der Waals (vdW) architectures. Recent results highlight rich sets of phenomena that qualify these materials as a distinct class of nanostructures, far beyond a mere extension of 3D-crystalline VLS nanowires to vdW crystals.The main difference between 3D- and vdW crystals, the pronounced in-plane/cross-plane anisotropy of layered materials, motivates investigating the factors governing the layer orientation. Recent research suggests that the VLS catalyst plays a key role, and that its modification via the choice of chalcogens or through modifiers added to the growth precursor can switch both the nanostructure morphology and vdW layering. In many instances, ordinary layered structures are not formed but VLS growth is dominated by morphologies─often containing a crystal defect─that present reduced or vanishing layer nucleation barriers, thus achieving fast growth and emerging as the principal synthesis product. Prominent defect morphologies include vdW bicrystals growing by a twin-plane reentrant process and chiral nanowires formed by spiral growth around an axial screw dislocation. The latter carry particular promise, e.g., for twistronics. In vdW nanowires, Eshelby twist─a progressive crystal rotation caused by the dislocation stress field─translates into interlayer twist that is precisely tunable via the wire diameter. Projected onto a helicoid vdW interface, the resulting twist moirés not only modify the electronic structure but also realize configurations without equivalent in planar systems, such as continuously variable twist and twist homojunctions.1D vdW nanostructures derive distinct functionality from both their layered structure and embedded defects. Correlated electron microscopy methods including imaging, nanobeam diffraction, as well as electron-stimulated local absorption and luminescence spectroscopies combine to an exceptionally powerful probe of this emerging functionality, identifying twist-moiré induced electronic modulations and chiral photonic modes, demonstrating the benign nature of defects in optoelectronics, and uncovering ferroelectricity via symmetry-breaking by single-layer stacking faults in vdW nanowires. Far-reaching possibilities for tuning crystal structure, morphology, and defects create a rich playground for the discovery of new functional nanomaterials based on vdW crystals. Given the prominence of defects and extensive prospects for controlling their character and placement during synthesis, 1D vdW nanostructures have the potential to cause a paradigm shift in the science of electronic materials, replacing the traditional strategy of suppressing crystal imperfections with an alternative philosophy that embraces the use of individual defects with designed properties as drivers of technology.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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3
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Mandal A, Khuntia SK, Mondal D, Mahadevan P, Bhattacharyya S. Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites. J Am Chem Soc 2023. [PMID: 37906676 DOI: 10.1021/jacs.3c10195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.
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Affiliation(s)
- Arnab Mandal
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
| | - Sanuja Kumar Khuntia
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Debayan Mondal
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Priya Mahadevan
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
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4
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Cai X, Chen G, Li R, Jia Y. Two-Dimensional Ferroelectric C 2N/In 2Se 3 Heterobilayer with Tunable Electronic Property and Photovoltaic Effect. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:14791-14799. [PMID: 37796482 DOI: 10.1021/acs.langmuir.3c02297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
Two-dimensional ferroelectric monolayer materials with reversible spontaneous polarization provide more regulatory dimensions for their relevant van der Waals heterostructures. Using first-principles calculations, we construct the C2N/In2Se3 bilayer heterostructure and study its physical properties as well as the effects of E-field and strain. The results indicate that the intrinsic polarization of the component In2Se3 monoalyer can significantly adjust the electronic properties of the C2N/In2Se3 heterobilayer. When the polarization of the In2Se3 monolayer points to the interface (up-In2Se3), the C2N/In2Se3 bilayer behaves as the type-I indirect band gap heterostructure, while it transforms to the type-II direct band gap heterostructure after reversing the polarization of the In2Se3 monolayer (dp-In2Se3). Furthermore, the two C2N/In2Se3 heterostructures both have enhanced optical absorption in the visible region than the isolated In2Se3 and C2N monolayers. More importantly, the external electric field and strain can easily regulate the electronic properties of the C2N/In2Se3 heterostructures. The power conversion efficiency (PCE) of the type-II C2N/dp-In2Se3 heterostructure is 8.16%, and the electric field of 0.1 V/Å and the strain of -2% can transform the C2N/up-In2Se3 heterostructure into type-II one, conducive to the high PCE up to 24.03 and 24%, respectively. Our proposed C2N/In2Se3 heterostructure is promising in future luminescent and photovoltaic fields, and our findings also provide a strategy for functionalizing 2D monolayer materials by the intrinsic polarization property of ferroelectric materials.
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Affiliation(s)
- Xiaolin Cai
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
| | - Guoxing Chen
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
| | - Rui Li
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, School of Material Science and Engineering, Henan University, Kaifeng 475004, China
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
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5
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Niu Y, Zhou X, Gao W, Fu M, Duan Y, Yao J, Wang B, Yang M, Zheng Z, Li J. Interfacial Engineering of In 2Se 3/h-BN/CsPb(Br/I) 3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System. ACS NANO 2023; 17:13760-13768. [PMID: 37428004 DOI: 10.1021/acsnano.3c03319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
Driven by the rapid development of autonomous vehicles, ultrasensitive photodetectors with high signal-to-noise ratio and ultraweak light detection capability are urgently needed. Due to its intriguing attributes, the emerging van der Waals material, indium selenide (In2Se3), has attracted extensive attention as an ultrasensitive photoactive material. However, the lack of an effective photoconductive gain mechanism in individual In2Se3 inhibits its further application. Herein, we propose a heterostructure photodetector consisting of an In2Se3 photoactive channel, a hexagonal boron nitride (h-BN) passivation layer, and a CsPb(Br/I)3 quantum dot gain layer. This device manifests a signal-to-noise ratio of 2 × 106 with responsivity of 2994 A/W and detectivity of 4.3 × 1014 Jones. Especially, it enables the detection of weak light as low as 0.03 μW/cm2. These performance characteristics are ascribed to the interfacial engineering. In2Se3 and CsPb(Br/I)3 with type-II band alignment promote the separation of photocarriers, while h-BN passivates the impurities on CsPb(Br/I)3 and promises a high-quality carrier transport interface. Furthermore, this device is successfully integrated into an automatic obstacle avoidance system, demonstrating promising application prospects in autonomous vehicles.
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Affiliation(s)
- Yingying Niu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Maixia Fu
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Yule Duan
- College of Information Science and Engineering, Henan University of Technology, Zhengzhou 450001, Henan, PR China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, PR China
| | - Bing Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong, PR China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, PR China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, PR China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, PR China
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6
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Li L, Feng H, Dong Z, Yang T, Xue S. Indium selenide/silver phosphate hollow microsphere S-scheme heterojunctions for photocatalytic hydrogen production with simultaneous degradation of tetracycline. J Colloid Interface Sci 2023; 649:10-21. [PMID: 37331106 DOI: 10.1016/j.jcis.2023.06.067] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 05/31/2023] [Accepted: 06/11/2023] [Indexed: 06/20/2023]
Abstract
Designing heterojunction photocatalysts with strong interfacial interactions is an effective way to reduce the recombination of photogenerated charge carriers. Here, silver phosphate (Ag3PO4) nanoparticles are coupled with hollow flower-like indium selenide (In2Se3) microspheres by a facile Ostwald ripening and in-situ growth method, resulting in the construction of In2Se3/Ag3PO4 hollow microsphere step-scheme (S-scheme) heterojunction with a large contact interface. The flower-like In2Se3 with hollow and porous structure provides a large specific surface area and numerous active sites for photocatalytic reactions to take place. The photocatalytic activity was tested by measuring the hydrogen evolution from antibiotic wastewater, and the H2 evolution rate of In2Se3/Ag3PO4 reached 4206.4 µmol g-1h-1 under visible light, which is approximately 2.8 times greater than that of In2Se3. In addition, the amount of tetracycline (TC) degradation when it was used as a sacrificial agent is about 54.4% after 1 h. On the one hand, Se-P chemical bonds act as electron transfer channels in the S-scheme heterojunctions, which can facilitate the migration and separation of photogenerated charge carriers. On the other hand, the S-scheme heterojunctions can retain the useful holes and electrons with higher redox capacities, which is very favorable for the generation of more •OH radicals and the photocatalytic activity is greatly enhanced. This work provides an alternative design approach for photocatalysts toward hydrogen evolution in antibiotic wastewater.
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Affiliation(s)
- Lingwei Li
- College of Science, Donghua University, Shanghai 201620, China
| | - Hange Feng
- College of Science, Donghua University, Shanghai 201620, China; College of Information Science and Technology, Donghua University, Shanghai 201620, China
| | - Zibo Dong
- College of Science, Donghua University, Shanghai 201620, China
| | - Tiantian Yang
- College of Science, Donghua University, Shanghai 201620, China
| | - Shaolin Xue
- College of Science, Donghua University, Shanghai 201620, China.
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7
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Yan Y, Li M, Xia K, Yang K, Wu D, Li L, Fei G, Gan W. A two-dimensional Te/ReS 2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse. NANOSCALE 2023; 15:7730-7736. [PMID: 37060126 DOI: 10.1039/d2nr07185a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) semiconductors are the building blocks for high-performance optoelectronic devices. However, the performance of photoconductive photodetectors based on 2D semiconductors is hampered by low photoresponsivity and large dark current. Herein, a van der Waals heterostructure (vdWH) composed of rhenium disulfide (ReS2) and tellurium (Te) is fabricated. The Te/ReS2 vdWH photodetector exhibits a sensitive and broadband photoresponse and has high photoresponse on/off ratios under ultraviolet and visible light illumination, especially over 102 in visible light. The Te/ReS2 vdWH photodetector achieves the responsivity of 7.9 A W-1 at 365 nm, 3.02 A W-1 at 450 nm, 2.37 A W-1 at 532 nm, and 2.45 A W-1 at 660 nm. In addition, the device achieves a high specific detectivity of 1011 Jones and a fast photoresponse speed of 11.9 μs. Such high responsivity could be attributed to the efficient absorption of phonons by the Te/ReS2 vdWH and the high-quality heterostructure interfaces with a small amount of trap states. The highly crystalline structure of Te/ReS2 with a low density of defects reduces the grain boundary scattering, leading to the rapid diffusion of charge carriers. Moreover, the Te/ReS2 vdWH device exhibits a photovoltaic effect and can be employed as a self-powered photodetector (SPPD), which is sensitive to visible light of 450 nm, 532 nm, and 660 nm. Our findings demonstrate that the Te/ReS2 vdWH photodetector is an ideal building block for the next-generation electronic and optoelectronic devices in practical applications.
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Affiliation(s)
- Yafei Yan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Minxin Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Kai Xia
- University of Science and Technology of China, Hefei 230026, P. R. China
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Kemeng Yang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Dun Wu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
| | - Liang Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Guangtao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
| | - Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China.
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8
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Cull W, Skowron ST, Hayter R, Stoppiello CT, Rance GA, Biskupek J, Kudrynskyi ZR, Kovalyuk ZD, Allen CS, Slater TJA, Kaiser U, Patanè A, Khlobystov AN. Subnanometer-Wide Indium Selenide Nanoribbons. ACS NANO 2023; 17:6062-6072. [PMID: 36916820 PMCID: PMC10061931 DOI: 10.1021/acsnano.3c00670] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In this work we synthesize single-layer, ultrathin, subnanometer-wide InxSey by templated growth inside single-walled carbon nanotubes (SWCNTs). Despite the complex polymorphism of InxSey we show that the phase of the encapsulated material can be identified through comparison of experimental aberration-corrected transmission electron microscopy (AC-TEM) images and AC-TEM simulations of known structures of InxSey. We show that, by altering synthesis conditions, one of two different stoichiometries of sub-nm InxSey, namely InSe or β-In2Se3, can be prepared. Additionally, in situ AC-TEM heating experiments reveal that encapsulated β-In2Se3 undergoes a phase change to γ-In2Se3 above 400 °C. Further analysis of the encapsulated species is performed using X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), energy dispersive X-ray analysis (EDX), and Raman spectroscopy, corroborating the identities of the encapsulated species. These materials could provide a platform for ultrathin, subnanometer-wide phase-change nanoribbons with applications as nanoelectronic components.
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Affiliation(s)
- William
J. Cull
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Stephen T. Skowron
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Ruth Hayter
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Craig T. Stoppiello
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Graham A. Rance
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Johannes Biskupek
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Zakhar R. Kudrynskyi
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
- Faculty
of Engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Zakhar D. Kovalyuk
- Institute
for Problems of Materials Science, National Academy of Sciences of
Ukraine, Chernivtsi Branch, 58001 Chernivtsi, Ukraine
| | - Christopher S. Allen
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Thomas J. A. Slater
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Ute Kaiser
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Amalia Patanè
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrei N. Khlobystov
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
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9
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Yan S, Xu C, Zhong C, Chen Y, Che X, Luo X, Zhu Y. Phase Instability in van der Waals In 2 Se 3 Determined by Surface Coordination. Angew Chem Int Ed Engl 2023; 62:e202300302. [PMID: 36861653 DOI: 10.1002/anie.202300302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 02/16/2023] [Accepted: 03/01/2023] [Indexed: 03/03/2023]
Abstract
van der Waals In2 Se3 has attracted significant attention for its room-temperature 2D ferroelectricity/antiferroelectricity down to monolayer thickness. However, instability and potential degradation pathway in 2D In2 Se3 have not yet been adequately addressed. Using a combination of experimental and theoretical approaches, we here unravel the phase instability in both α- and β'-In2 Se3 originating from the relatively unstable octahedral coordination. Together with the broken bonds at the edge steps, it leads to moisture-facilitated oxidation of In2 Se3 in air to form amorphous In2 Se3-3x O3x layers and Se hemisphere particles. Both O2 and H2 O are required for such surface oxidation, which can be further promoted by light illumination. In addition, the self-passivation effect from the In2 Se3-3x O3x layer can effectively limit such oxidation to only a few nanometer thickness. The achieved insight paves way for better understanding and optimizing 2D In2 Se3 performance for device applications.
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Affiliation(s)
- Shanru Yan
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Chao Xu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Cenchen Zhong
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Yancong Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, P.R. China
| | - Xiangli Che
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, P.R. China
| | - Ye Zhu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
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10
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Sutter E, French JS, Komsa HP, Sutter P. 1D Germanium Sulfide van der Waals Bicrystals by Vapor-Liquid-Solid Growth. ACS NANO 2022; 16:3735-3743. [PMID: 35147417 DOI: 10.1021/acsnano.1c07349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Defects in two-dimensional and layered materials have attracted interest for realizing properties different from those of perfect crystals. Even stronger links between defect formation, fast growth, and emerging functionality can be found in nanostructures of van der Waals crystals, but only a few prevalent morphologies and defect-controlled synthesis processes have been identified. Here, we show that in vapor-liquid-solid growth of 1D van der Waals nanostructures, the catalyst controls the selection of the predominant (fast-growing) morphologies. Growth of layered GeS over Bi catalysts leads to two coexisting nanostructure types: chiral nanowires carrying axial screw dislocations and bicrystal nanoribbons where a central twin plane facilitates rapid growth. While Au catalysts produce exclusively dislocated nanowires, their modification with an additive triggers a switch to twinned bicrystal ribbons. Nanoscale spectroscopy shows that, while supporting fast growth, the twin defects in the distinctive layered bicrystals are electronically benign and free of nonradiative recombination centers.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Jacob S French
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
| | - Hannu-Pekka Komsa
- Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
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11
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Tang L, Chen H, Ma Y, Liu Y, Hua L, Lu L, Wang B, Han S, Sun Z, Luo J. A bilayered two-dimensional hybrid perovskite with a cage-templated secondary cation for high efficiency photodetection. Inorg Chem Front 2022. [DOI: 10.1039/d1qi01326b] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A novel two-dimensional hybrid perovskite (IA)2(DMA)Pb2Br7 was obtained by introducing a large secondary cation DMA+ into the PbBr6 framework. A highly efficient array photodetector has been assembled using its crystal.
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Affiliation(s)
- Liwei Tang
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, 350007, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Huaixi Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Yu Ma
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Lina Hua
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Lei Lu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Beibei Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
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12
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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13
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Sutter E, Sutter P. Ultrathin Twisted Germanium Sulfide van der Waals Nanowires by Bismuth Catalyzed Vapor-Liquid-Solid Growth. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104784. [PMID: 34655159 DOI: 10.1002/smll.202104784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 09/18/2021] [Indexed: 06/13/2023]
Abstract
1D nanowires of 2D layered crystals are emerging nanostructures synthesized by combining van der Waals (vdW) epitaxy and vapor-liquid-solid (VLS) growth. Nanowires of the group IV monochalcogenide germanium sulfide (GeS) are of particular interest for twistronics due to axial screw dislocations giving rise to Eshelby twist and precision interlayer twist at helical vdW interfaces. Ultrathin vdW nanowires have not been realized, and it is not clear if confining layered crystals into extremely thin wires is even possible. If axial screw dislocations are still stable, ultrathin vdW nanowires can reach large twists and should display significant quantum confinement. Here it is shown that VLS growth over Bi catalysts yields vdW nanowires down to ≈15 nm diameter while maintaining tens of µm length. Combined electron microscopy and diffraction demonstrate that ultrathin GeS nanowires crystallize in the orthorhombic bulk structure but can realize nonequilibrium stacking that may lead to 1D ferroelectricity. Ultrathin nanowires carry screw dislocations, remain chiral, and achieve very high twist rates. Whenever the dislocation extends to the nanowire tip, it continues into the Bi catalyst. Eshelby twist analysis demonstrates that the ultrathin nanowires follow continuum predictions. Cathodoluminescence on individual nanowires, finally, shows pronounced emission blue shifts consistent with quantum confinement.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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14
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Meng S, Wang J, Shi H, Sun X, Gao B. Distinct ultrafast carrier dynamics of α-In 2Se 3 and β-In 2Se 3: contributions from band filling and bandgap renormalization. Phys Chem Chem Phys 2021; 23:24313-24318. [PMID: 34673867 DOI: 10.1039/d1cp03874e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
As an intrigued layered 2D semiconductor material, indium selenide (In2Se3) has attracted widespread attention due to its excellent properties. So far, the carrier dynamics of α-In2Se3 and β-In2Se3 are still lacking a comprehensive understanding, which is essential to enhancing the performance of In2Se3-based optoelectronic devices. In this study, we explored the ultrafast carrier dynamics in thin α-In2Se3 and β-In2Se3via transient absorption microscopy. For α-In2Se3 with a narrower bandgap, band filling and bandgap renormalization jointly governed the time evolution of the differential reflectivity signal, whose magnitude and sign at different delays were determined by the weights between the band filling and bandgap renormalization, depending on the carrier density. For β-In2Se3, whose bandgap is close to the probe photon energy, only positive differential reflectivity was detected, which was attributed to strong band filling effect. In both materials, the lifetime decreased and the relative amplitude of the Auger process increased, when the pump fluence was increased. These findings could provide further insights into the optical and optoelectronic properties of In2Se3-based devices.
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Affiliation(s)
- Shengjie Meng
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
| | - Jian Wang
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
| | - Hongyan Shi
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Xiudong Sun
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Bo Gao
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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15
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Shen Q, Xu T, Zhuang GL, Zhuang Y, Sun L, Han X, Wang X, Zhan W. Spatially Separated Photoinduced Charge Carriers for the Enhanced Photocatalysis Over the One-Dimensional Yolk–Shell In 2Se 3@N-C Nanoreactor. ACS Catal 2021. [DOI: 10.1021/acscatal.1c03360] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Affiliation(s)
- Qiuyan Shen
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Tianyi Xu
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Gui-lin Zhuang
- Laboratory of Molecular Catalysis & Computational Materials, Zhejiang University of Technology, Hangzhou 310014, People’s Republic of China
| | - Yuan Zhuang
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Liming Sun
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Xiguang Han
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Xiaojun Wang
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
| | - Wenwen Zhan
- Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou 221116, People’s Republic of China
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16
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Chen Y, Zhang M. Large-area growth of SnS 2 nanosheets by chemical vapor deposition for high-performance photodetectors. RSC Adv 2021; 11:29960-29964. [PMID: 35480265 PMCID: PMC9040918 DOI: 10.1039/d1ra05779k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2021] [Accepted: 08/30/2021] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional tin disulfide (SnS2) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS2 nanosheets and unsatisfactory performance of the photodetectors based on SnS2 have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl2 as a precursor to grow SnS2 nanosheets. We found that the as-grown SnS2 nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS2 were fabricated and, exhibited a high responsivity (1400 A W-1), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 105%), and remarkable detectivity (D*) (3.1 × 1013 Jones). Our work provides a new CVD method to grow high-quality SnS2 nanosheets.
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Affiliation(s)
- Ying Chen
- Hubei Engineering Technology Research Center of Energy Photoelectric Device and System, Hubei University of Technology Wuhan 430068 China
- School of Science, Hubei University of Technology Wuhan 430068 China
| | - Man Zhang
- School of Electrical and Electronic Engineering, Hubei University of Technology Wuhan 430068 China
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17
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Tian Y, Vankova N, Weidler P, Kuc A, Heine T, Wöll C, Gu Z, Zhang J. Oriented Growth of In-Oxo Chain Based Metal-Porphyrin Framework Thin Film for High-Sensitive Photodetector. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100548. [PMID: 34306983 PMCID: PMC8292912 DOI: 10.1002/advs.202100548] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/09/2021] [Indexed: 06/13/2023]
Abstract
The potential of metal-organic frameworks (MOFs) for applications in optoelectronics results from a unique combination of interesting photophysical properties and straightforward tunability of organic and inorganic units. Here, it is demonstrated that using MOF approach chromophores can be assembled into well-ordered 1D arrays using metal-oxo strands as lead structure, and the resulting porphyrinic rows exhibit unique photophysical properties and allow the realization of highly sensitive photodetectors. A porphyrinic MOF thin film, In-TCPP surface-coordinated MOF thin films with [021] orientation is fabricated using a layer-by-layer method, from In(NO3)3 and TCPP (5,10,15,20-(4-carboxyphenyl)porphyrin). Detailed experimental and theoretical analysis reveals that the assembly yields a structure where In-oxo strands running parallel to the substrate fix the chromophoric linkers to yield 1D arrays of porphyrins. The frontier orbitals of this highly anisotropic arrangement are localized in these columnar arrangements of porphyrins and result in high photoactivity, which is exploited to fabricate a photodetector with record (as compared to other organic materials) responsivity in visible regime of 7.28 × 1014 Jones and short rise/fall times (0.07/0.04 s). This oriented MOF thin film-based high-sensitive photodetector provides a new avenue to use inorganic, stable lead structures to assemble organic semiconductors into regular arrays, thus creating a huge potential for the fabrication of optoelectronic devices.
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Affiliation(s)
- Yi‐Bo Tian
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
| | - Nina Vankova
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
| | - Peter Weidler
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Christof Wöll
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Zhi‐Gang Gu
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Jian Zhang
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
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18
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Zeng X, Lontchi J, Zhukova M, Fourdrinier L, Qadir I, Ren Y, Niemi E, Li G, Flandre D. High-responsivity broadband photodetection of an ultra-thin In 2S 3/CIGS heterojunction on steel. OPTICS LETTERS 2021; 46:2288-2291. [PMID: 33988566 DOI: 10.1364/ol.423999] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 04/14/2021] [Indexed: 06/12/2023]
Abstract
${\rm{Cu}}({\rm{In}},{\rm{Ga}}){\rm{S}}{{\rm{e}}_2}$ (CIGS) is a promising light harvesting material for large-area broadband photodetection, but it has been rarely studied up to now. Here an In2S3/CIGS heterojunction photodiode on steel is shown to be highly broadband photo-sensitive, with a photoresponsivity over 0.8 A/W, an external quantum efficiency over 100%, and a detectivity over 8×1010 Jones from 505 to 910nm under a reverse bias of 1 V. Moreover, the CIGS photodiode exhibits an outstanding weak light detection ability (i.e., at light power density of ${{20}}\;\unicode{x00B5} {\rm{W/c}}{{\rm{m}}^2}$), reaching a record responsivity of 2.06 A/W, an impressive EQE of 293%, and a good detectivity of ${2.3} \times {{1}}{{{0}}^{11}}$ Jones at 870 nm under 1 V reverse bias. Importantly, the CIGS photodiode, working as a self-powered photodetector, under 0 V, shows a record detectivity of ${\sim}{3.4} \times {{1}}{{{0}}^{12}}$ Jones with a high responsivity of ${\sim}{0.44}\;{\rm{A/W}}$ and a high EQE of ${\sim}{{63}}\%$, at 870 nm.
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19
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Li Y, Lin C, Huang J, Chi C, Huang B. Spectrally Selective Absorbers/Emitters for Solar Steam Generation and Radiative Cooling-Enabled Atmospheric Water Harvesting. GLOBAL CHALLENGES (HOBOKEN, NJ) 2021; 5:2000058. [PMID: 33437525 PMCID: PMC7788633 DOI: 10.1002/gch2.202000058] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2020] [Revised: 09/16/2020] [Indexed: 05/24/2023]
Abstract
Renewable energy harvesting from the sun and outer space have aroused significant interest over the past decades due to their great potential in addressing the energy crisis. Furthermore, the harvested renewable energy has benefited another global challenge, water scarcity. Both solar steam generation and passive radiative cooling-enabled atmospheric water harvesting are promising technologies that produce freshwater in green and sustainable ways. Spectral control is extremely important to achieve high efficiency in the two complementary systems based on absorbing/emitting light in a specific wavelength range. For this reason, a broad variety of solar absorbers and IR emitters with great spectral selectivity have been developed. Although operating in different spectral regions, solar selective absorbers and IR selective emitters share similar design strategies. At this stage, it is urgent and necessary to review their progress and figure out their common optical characteristics. Herein, the fundamental mechanisms and recent progress in solar selective absorbers and IR selective emitters are summarized, and their applications in water production are reported. This review aims to identify the importance of selective absorbers/emitters and inspire more research works on selective absorbers/emitters through the summary of advances and the establishment of the connection between solar absorbers and IR emitters.
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Affiliation(s)
- Yang Li
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SAR999077China
| | - Chongjia Lin
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SAR999077China
| | - Jingyuan Huang
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SAR999077China
| | - Cheng Chi
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SAR999077China
| | - Baoling Huang
- Department of Mechanical and Aerospace EngineeringThe Hong Kong University of Science and TechnologyClear Water BayKowloonHong Kong SAR999077China
- The Hong Kong University of Science and Technology Foshan Research Institute for Smart ManufacturingClear Water BayKowloonHong Kong SAR999077China
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20
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Lin Z, Wang C, Chai Y. Emerging Group-VI Elemental 2D Materials: Preparations, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003319. [PMID: 32797721 DOI: 10.1002/smll.202003319] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2020] [Revised: 07/02/2020] [Indexed: 05/17/2023]
Abstract
Due to the ultrathin thickness and dangling-bond-free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group-VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group-VI elemental 2D materials enable device applications including high-performance field-effect transistors and optoelectronic devices. The excellent environmental stability also facilitates fundamental studies and practical applications of group-VI elemental 2D materials. This Review first focuses on the crystal structures of group-VI elemental 2D materials. Afterward, preparation methods for nanostructures of group-VI materials are introduced with comprehensive studies. A brief Review of the electronic structures is then presented with an understanding of the electrical properties. This Review also contains the device applications of group-VI elemental 2D materials, emphasizing transistors, photodetectors, and other appealing applications. Finally, this Review provides an outlook for the development of group-VI elemental 2D materials, highlighting the challenges and opportunities in fundamental studies and technological applications.
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Affiliation(s)
- Ziyuan Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Cong Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China
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21
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Guo J, Cheng G, Du Z. The recent progress of triboelectric nanogenerator-assisted photodetectors. NANOTECHNOLOGY 2020; 31:292003. [PMID: 32217816 DOI: 10.1088/1361-6528/ab841e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Since 2012, triboelectric nanogenerator (TENG) has attracted significant interest from researchers in the field of energy conversion due to its unique output characteristics of high voltage, pulse and low current. In addition, recent advancements have demonstrated that photodetection platforms based on TENG exhibit great advantages such as being simple, low-cost, portable, with high sensitivity, high response, etc, and are environment friendly. Here, this article provides a comprehensive review on the state-of-the-art photodetectors based on TENG in recent years, and a detailed introduction to the structural design and potential mechanisms. It mainly focuses on self-powered photodetectors (including photodetectors as a load resistance of a TENG and photosensitive materials such as tribo-layer of TENG) and the modulation of photodetectors based on TENG (including utilizing the voltage of TENG as well as triboelectric microplasma). Finally, we put forward some perspectives and outlook, including structure engineering and mechanism guidance, for the future development of simple, high-performance and portable photodetectors based on TENG.
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Affiliation(s)
- Junmeng Guo
- Key Lab for Special Functional Materials, Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, People's Republic of China
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22
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Lei Y, Wang S, Xing J, Xu H, Han J, Liu W. High-Performance UV–Vis Photodetectors Based on a Lead-Free Hybrid Perovskite Crystal (MV)[SbI3Cl2]. Inorg Chem 2020; 59:4349-4356. [DOI: 10.1021/acs.inorgchem.9b03277] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Yunlin Lei
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China
| | - Shouyu Wang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China
| | - Jie Xing
- School of Sciences, China University of Geosciences, Beijing 100083, China
| | - Hong Xu
- School of Sciences, China University of Geosciences, Beijing 100083, China
| | - Jing Han
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, China
| | - Weifang Liu
- Tianjin Key Laboratory of Low-Dimensional Materials, Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, China
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23
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Li Y, Ye J, Yuan K, Zhai G, Li T, Ye Y, Wu X, Zhang X. Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes. NANOTECHNOLOGY 2020; 31:095713. [PMID: 31731280 DOI: 10.1088/1361-6528/ab5835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Carrier relaxation dynamics of InSe flakes is investigated by using time-resolved pump-probe reflectivity measurement. The photocarriers associated with the P xy orbital band-edge transition at 2.40 eV, which is coupled to the in-plane polarized light, is observed to possess a lifetime of ∼19 ps at room temperature and ∼99 ps at 10 K. The temperature and power dependent carrier lifetime suggests that Shockley-Read-Hall process is the dominant nonradiative recombination mechanism responsible for the carrier relaxation. In addition, the electron scattering with a 14.5 meV optical phonon plays an active role in the carrier relaxation with increasing temperatures. A broad absorption around 1.65-1.90 eV is observed. The photocarriers associated with this broad transition show a long lifetime of ∼200 ps that is nearly independent of temperature and photon energy. This is indicative of bound carriers by defects. Our experimental results provide essential information for the characteristics of carrier dynamics and defects in InSe flakes. The experimental findings are fundamentally important for further development of microelectronics and optoelectronics based on InSe.
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Affiliation(s)
- Ying Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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24
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Ding M, Guo Z, Chen X, Ma X, Zhou L. Surface/Interface Engineering for Constructing Advanced Nanostructured Photodetectors with Improved Performance: A Brief Review. NANOMATERIALS 2020; 10:nano10020362. [PMID: 32092948 PMCID: PMC7075325 DOI: 10.3390/nano10020362] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2020] [Revised: 02/08/2020] [Accepted: 02/13/2020] [Indexed: 02/06/2023]
Abstract
Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.
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Affiliation(s)
- Meng Ding
- School of Physics and Technology, University of Jinan, 336 Nanxinzhuang West Road, Jinan 250022, China; (X.C.); (X.M.)
- Correspondence: (M.D.); (Z.G.); (L.Z.)
| | - Zhen Guo
- Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China
- Zhongke Mass Spectrometry (Tianjin) Medical Technology Co., Ltd., Tianjin 300399, China
- Correspondence: (M.D.); (Z.G.); (L.Z.)
| | - Xuehang Chen
- School of Physics and Technology, University of Jinan, 336 Nanxinzhuang West Road, Jinan 250022, China; (X.C.); (X.M.)
| | - Xiaoran Ma
- School of Physics and Technology, University of Jinan, 336 Nanxinzhuang West Road, Jinan 250022, China; (X.C.); (X.M.)
| | - Lianqun Zhou
- Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China
- Jihua Institute of Biomedical Engineering Technology, Jihua Laboratory, Foshan 528251, China
- Correspondence: (M.D.); (Z.G.); (L.Z.)
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25
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Yang D, Zhu Q, Sun X, Chen C, Guo W, Yang G, Han B. Electrosynthesis of a Defective Indium Selenide with 3D Structure on a Substrate for Tunable CO
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Electroreduction to Syngas. Angew Chem Int Ed Engl 2020; 59:2354-2359. [DOI: 10.1002/anie.201914831] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2019] [Indexed: 12/20/2022]
Affiliation(s)
- Dexin Yang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Qinggong Zhu
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Xiaofu Sun
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
| | - Chunjun Chen
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Weiwei Guo
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Guanying Yang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Buxing Han
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
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26
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Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, Tan P, Sun L, Cui X, Liang SJ, Miao F. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905902. [PMID: 31867892 DOI: 10.1002/smll.201905902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2019] [Revised: 11/24/2019] [Indexed: 06/10/2023]
Abstract
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to lattice mismatch. Here, a catalysis-free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2 /Si substrates through edge-homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2 /Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self-driven vapor-liquid-solid process, which is distinct from the conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, it is demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W-1 , ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2 /Si substrates.
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Affiliation(s)
- Song Hao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shengnan Yan
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Hui Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lingfei Li
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Xiaowei Liu
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Tianjun Cao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Anyuan Gao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lili Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lanxin Jia
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Mingsheng Long
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xinyi Cui
- State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing, 210046, China
| | - Shi-Jun Liang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Feng Miao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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Procopio EF, Pedrosa RN, L. de Souza FA, Paz WS, Scopel WL. Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering. Phys Chem Chem Phys 2020; 22:3520-3526. [DOI: 10.1039/c9cp06023e] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this work, we have investigated the effects of in-plane mechanical strains on the electronic properties of single-layer α-In2Se3 by means of density functional theory (DFT) calculations.
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Affiliation(s)
- Erik F. Procopio
- Department of Physics – Federal University of Espirito Santo
- Goiabeiras
- Brazil
| | - Renan N. Pedrosa
- Department of Physics – Federal University of Espirito Santo
- Goiabeiras
- Brazil
| | - Fábio A. L. de Souza
- Federal Institute of Education
- Science and Technology of Espírito Santo
- Ibatiba/ES
- Brazil
| | - Wendel S. Paz
- Department of Physics – Federal University of Espirito Santo
- Goiabeiras
- Brazil
| | - Wanderlã L. Scopel
- Department of Physics – Federal University of Espirito Santo
- Goiabeiras
- Brazil
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28
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Yang D, Zhu Q, Sun X, Chen C, Guo W, Yang G, Han B. Electrosynthesis of a Defective Indium Selenide with 3D Structure on a Substrate for Tunable CO
2
Electroreduction to Syngas. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201914831] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Dexin Yang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Qinggong Zhu
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Xiaofu Sun
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
| | - Chunjun Chen
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Weiwei Guo
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Guanying Yang
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
| | - Buxing Han
- Beijing National Laboratory for Molecular SciencesKey Laboratory of Colloid and Interface and ThermodynamicsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
- Physical Science LaboratoryHuairou National Comprehensive Science Center No. 5 Yanqi East, Second Street Beijing 101400 China
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29
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Singh H, Singh P, Singh R, Sharma J, Singh AP, Kumar A, Thakur A. Composition dependent structural phase transition and optical band gap tuning in InSe thin films. Heliyon 2019; 5:e02933. [PMID: 31844773 PMCID: PMC6895580 DOI: 10.1016/j.heliyon.2019.e02933] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2019] [Revised: 06/19/2019] [Accepted: 11/25/2019] [Indexed: 11/30/2022] Open
Abstract
Bulk alloys of In x Se100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited In x Se100-x thin films with x ≤ 40 are amorphous and In50Se50 thin film is crystalline in nature verified from X-ray diffraction (XRD). The change in morphology of deposited thin films with indium content also verifies structural phase transition and found that the phase transition started with x = 40 which is not detected in XRD pattern. The drastic change in transmission is found with 50% indium content. In50Se50 thin film has less than 30% transmission whereas other films are highly transparent. Optical band gap is calculated using Tauc's plot and decrease in optical band gap is observed with indium content. The variation of optical band gap from 1.88 eV to 1.12 eV is achieved with indium content of 5%-50%. The structural transition and change in optical band gap depict that InSe thin films are potential candidates in various technological applications.
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Affiliation(s)
- Harpreet Singh
- Department of Physics, Punjabi University, Patiala, 147 002, Punjab, India.,Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, India
| | - Palwinder Singh
- Department of Physics, Punjabi University, Patiala, 147 002, Punjab, India.,Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, India
| | - Randhir Singh
- Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, India
| | - Jeewan Sharma
- Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, India
| | - A P Singh
- Department of Physics, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab, 144 011, India
| | - Akshay Kumar
- Department of Nanotechnology, Sri Guru Granth Sahib World University, Fatehgarh Sahib, Punjab, 140 407, India
| | - Anup Thakur
- Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala, 147 002, Punjab, India
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Li W, Dai M, Hu Y, Chen H, Zhu X, Yang Q, Hu P. Synchronous Enhancement for Responsivity and Response Speed in In 2Se 3 Photodetector Modulated by Piezoresistive Effect. ACS APPLIED MATERIALS & INTERFACES 2019; 11:47098-47105. [PMID: 31738040 DOI: 10.1021/acsami.9b17448] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Although single ultra-high-performance indicators have been achieved based on two-dimensional (2D) semiconductors, the comprehensive performances of the photodetectors of them are not so desirable. The response speed and responsivity are two key figures of merit for photodetectors, while these two parameters are always mutually suppressive and can not be synchronously satisfied. Here, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In2Se3-based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Through studying the optoelectronic properties of In2Se3 photodetector under strain modulations, we found that the responsivity under 0.65% tensile strain is improved by almost 68.6% on average, while responsivity under 0.65% compressive strain is lowered by about 57.3% in the wavelength range of 200-1000 nm. More importantly, the response speed of the In2Se3-based photodetector under two different mechanical strains rises distinctly (from 244 to 214 and 180 μs, accordingly). The strain-engineering can accommodate the band structure and enhance the electric and optical properties of the semiconducting crystals, ultimately realizing high-performance photodetectors. The strategy proposed in this work for improving the performance of photodetectors provides a promising route to practical applications in next-generation optoelectronic devices.
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31
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Long H, Liu S, Wen Q, Yuan H, Tang CY, Qu J, Ma S, Qarony W, Zeng LH, Tsang YH. In 2Se 3 nanosheets with broadband saturable absorption used for near-infrared femtosecond laser mode locking. NANOTECHNOLOGY 2019; 30:465704. [PMID: 31323655 DOI: 10.1088/1361-6528/ab33d2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Indium selenide (In2Se3) has attracted tremendous attention due to its favorable electronic features, broad tunable bandgap, high stability and other attractive properties. However, its further applications for nonlinear optics have not yet been fully explored. In this work, we demonstrate that few-layer α-In2Se3 nanosheets exhibit strong saturable absorption properties over a wide wavelength range covering 800, 1064 and 1550 nm. The few-layer α-In2Se3 nanosheets used for this experiment are fabricated via a simple ultrasonic exfoliation in liquid. Stable ultrafast mode-locking laser pulses are obtained from both ytterbium-doped and erbium-doped fiber laser systems operating at 1064 and 1550 nm, respectively. A pulse duration as short as 215 fs was achieved in the Er-doped fiber laser system. Stable output pulses over 6 h of operation were obtained in both laser systems. The pulse energy and peak power of the laser output pulses were increased by reducing the In2Se3 thickness. These results indicate that α-In2Se3 nanosheets with low layer numbers are promising candidates for broad ultrafast photonics devices, such as optical switchers, Q-switchers and mode lockers.
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Affiliation(s)
- Hui Long
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, People's Republic of China. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, People's Republic of China
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32
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Zhang F, Wang Z, Dong J, Nie A, Xiang J, Zhu W, Liu Z, Tao C. Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In 2Se 3. ACS NANO 2019; 13:8004-8011. [PMID: 31241301 DOI: 10.1021/acsnano.9b02764] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Phase transformation in emerging two-dimensional (2D) materials is crucial for understanding and controlling the interplay between structure and electronic properties. In this work, we investigate 2D In2Se3 synthesized via chemical vapor deposition, a recently discovered 2D ferroelectric material. We observed that In2Se3 layers with thickness ranging from a single layer to ∼20 layers stabilized at the β phase with a superstructure at room temperature. At around 180 K, the β phase converted to a more stable β' phase that was distinct from previously reported phases in 2D In2Se3. The kinetics of the reversible thermally driven β-to-β' phase transformation was investigated by temperature-dependent transmission electron microscopy and Raman spectroscopy, corroborated with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, density functional theory calculations reveal in-plane ferroelectricity in the β' phase. Scanning tunneling spectroscopy measurements show that the indirect bandgap of monolayer β' In2Se3 is 2.50 eV, which is larger than that of the multilayer form with a measured value of 2.05 eV. Our results on the reversible thermally driven phase transformation in 2D In2Se3 with thickness down to the monolayer limit and the associated electronic properties will provide insights to tune the functionalities of 2D In2Se3 and other emerging 2D ferroelectric materials and shed light on their numerous potential applications (e.g., nonvolatile memory devices).
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Affiliation(s)
- Fan Zhang
- Department of Physics , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Zhe Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, and Synergetic Innovation Center of Quantum Information and Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China
| | - Jiyu Dong
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Jianyong Xiang
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, and Synergetic Innovation Center of Quantum Information and Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Chenggang Tao
- Department of Physics , Virginia Tech , Blacksburg , Virginia 24061 , United States
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33
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Sutter P, Wimer S, Sutter E. Chiral twisted van der Waals nanowires. Nature 2019; 570:354-357. [DOI: 10.1038/s41586-019-1147-x] [Citation(s) in RCA: 74] [Impact Index Per Article: 14.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2018] [Accepted: 01/25/2019] [Indexed: 11/10/2022]
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34
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Sun X, He J, Shi B, Zhang B, Yang K, Zhang C, Wang R. Alpha-phase indium selenide saturable absorber for a femtosecond all-solid-state laser. OPTICS LETTERS 2019; 44:699-702. [PMID: 30702714 DOI: 10.1364/ol.44.000699] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2018] [Accepted: 12/28/2018] [Indexed: 06/09/2023]
Abstract
We successfully fabricated the high-quality few-layered α-In2Se3 and investigated its carrier dynamics and nonlinear optical absorption properties by pump-probe and open-aperture Z-scan technologies. Intra- and inter-band relaxation times were determined to be 7.2 ps and 270 ps, respectively, and the effective nonlinear absorption coefficient was measured as βeff=-3.9×103 cm/GW (1064 nm). Based on α-In2Se3 saturable absorber, a continuous-wave mode-locking operation was realized. Pulse duration, repetition rate, and maximum output power were measured to be 352 fs, 42.4 MHz, and 0.56 W, corresponding to pulse energy of 13.2 nJ and peak power of 37.5 kW. To the best of our knowledge, this is the first demonstration of non-transition metal chalcogenides applied in ultrafast all-solid-state bulk lasers. This work well verified that α-In2Se3 should be a promising optical modulator candidate for all-solid-state lasers.
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35
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Tang L, Teng C, Luo Y, Khan U, Pan H, Cai Z, Zhao Y, Liu B, Cheng HM. Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In 2Se 3 for Flexible Broadband Photodetectors. RESEARCH (WASHINGTON, D.C.) 2019; 2019:2763704. [PMID: 31549054 PMCID: PMC6750059 DOI: 10.34133/2019/2763704] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Accepted: 01/18/2019] [Indexed: 11/06/2022]
Abstract
The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Usman Khan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Haiyang Pan
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yue Zhao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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Zhu C, Shen H, Liu H, Lv X, Li Z, Yuan Q. Solution-Processable Two-Dimensional In2
Se3
Nanosheets as Efficient Photothermal Agents for Elimination of Bacteria. Chemistry 2018; 24:19060-19065. [DOI: 10.1002/chem.201804360] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Revised: 09/28/2018] [Indexed: 01/01/2023]
Affiliation(s)
- Chunli Zhu
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
| | - Haijing Shen
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
| | - Haoyang Liu
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
| | - Xiaobo Lv
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
| | - Zhihao Li
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
| | - Quan Yuan
- Key Laboratory of Analytical Chemistry for Biology and Medicine (Ministry of Education); College of Chemistry and Molecular Sciences; Wuhan University; Wuhan 430072 P.R. China
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Feng W, Gao F, Hu Y, Dai M, Li H, Wang L, Hu P. High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In 2Se 3 nanosheets. NANOTECHNOLOGY 2018; 29:445205. [PMID: 30136650 DOI: 10.1088/1361-6528/aadc73] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D In2Se3. Both rigid and flexible 2D In2Se3 photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A · W-1 are achieved using rigid and flexible 2D In2Se3 photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D In2Se3 and physical vapor deposition grown 2D In2Se3. Furthermore, flexible 2D In2Se3 photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D In2Se3 applications in flexible optoelectronic and photovoltaic devices.
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Affiliation(s)
- Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin, 150040, People's Republic of China
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38
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Poh SM, Tan SJR, Wang H, Song P, Abidi IH, Zhao X, Dan J, Chen J, Luo Z, Pennycook SJ, Castro Neto AH, Loh KP. Molecular-Beam Epitaxy of Two-Dimensional In 2Se 3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction. NANO LETTERS 2018; 18:6340-6346. [PMID: 30192558 DOI: 10.1021/acs.nanolett.8b02688] [Citation(s) in RCA: 62] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Ferroelectric thin film has attracted great interest for nonvolatile memory applications and can be used in either ferroelectric Schottky diodes or ferroelectric tunneling junctions due to its promise of fast switching speed, high on-to-off ratio, and nondestructive readout. Two-dimensional α-phase indium selenide (In2Se3), which has a modest band gap and robust ferroelectric properties stabilized by dipole locking, is an excellent candidate for multidirectional piezoelectric and switchable photodiode applications. However, the large-scale synthesis of this material is still elusive, and its performance as a ferroresistive memory junction is rarely reported. Here, we report the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer α-In2Se3 on graphene and demonstrate the use of α-In2Se3 on graphene in ferroelectric Schottky diode junctions by employing high-work-function gold as the top electrode. The polarization-modulated Schottky barrier formed at the interface exhibits a giant electroresistance ratio of 3.9 × 106 with a readout current density of >12 A/cm2, which is more than 200% higher than the state-of-the-art technology. Our MBE growth method allows a high-quality ultrathin film of In2Se3 to be heteroepitaxially grown on graphene, thereby simplifying the fabrication of high-performance 2D ferroelectric junctions for ferroresistive memory applications.
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Affiliation(s)
- Sock Mui Poh
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Sherman Jun Rong Tan
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Han Wang
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Peng Song
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
| | - Irfan H Abidi
- Department of Chemical and Biological Engineering , The Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Xiaoxu Zhao
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Jiadong Dan
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering , The Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Stephen J Pennycook
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
| | - Antonio H Castro Neto
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
- Department of Physics , National University of Singapore , 3 Science Drive 2 , 117542 Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
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Xie Z, Yang F, Xu X, Lin R, Chen L. Functionalization of α-In 2Se 3 Monolayer via Adsorption of Small Molecule for Gas Sensing. Front Chem 2018; 6:430. [PMID: 30320063 PMCID: PMC6169259 DOI: 10.3389/fchem.2018.00430] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Accepted: 08/30/2018] [Indexed: 11/21/2022] Open
Abstract
Based on first-principles calculations, the adsorption of NO and NO2 gas molecules on the α-In2Se3 monolayer have been studied. The adsorption configuration, adsorption energy, electronic structure and charge transfer properties are investigated. It is found that the charge transfer processes of NO and NO2 adsorbed on the surface of α-In2Se3 monolayer exhibit electron donor and acceptor characteristics, respectively. After the adsorption of the molecules, the α-In2Se3 monolayers have new states near the Fermi level induced by NO and NO2, which can trigger some new effects on the conducting and optical properties of the materials, with potential benefits to gas selectivity. The present work provides new valuable results and theoretical foundation for potential applications of the In2Se3-based gas sensor.
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Affiliation(s)
- Zhi Xie
- College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, China
| | - Fugui Yang
- School of Electronic Information Science, Fujian Jiangxia University, Fuzhou, China
| | - Xuee Xu
- College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, China
| | - Rui Lin
- College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, China
| | - Limin Chen
- College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, China
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40
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Yan P, Jiang Z, Chen H, Yin J, Lai J, Wang J, He T, Yang J. α-In 2Se 3 wideband optical modulator for pulsed fiber lasers. OPTICS LETTERS 2018; 43:4417-4420. [PMID: 30211879 DOI: 10.1364/ol.43.004417] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2018] [Accepted: 08/16/2018] [Indexed: 06/08/2023]
Abstract
With the magnetron-sputtering deposition method, α phase indium selenide (α-In2Se3) was developed into a saturable absorber (SA) with wideband saturable absorption property at 800, 1560, and 1930 nm. After inserting the α-In2Se3 SA into erbium-doped fiber laser (EDFL) and thulium-doped fiber laser (TDFL) systems, we can easily obtain stable soliton pulse trains. The pulse duration/pulse energy/slope efficiency for EDFL and TDFL were 276 fs/2.03 nJ/15.8% and 1.02 ps/7.1 nJ/23.5%, respectively. These results showed that the MSD-grown α-In2Se3 could be regarded as high efficiency material to be applied in ultrafast photonics.
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41
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Wang J, Shi R, Wang W, Cai N, Chen P, Kong D, Amini A, Cheng C. Directly Probing Light Absorption Enhancement of Single Hierarchical Structures with Engineered Surface Roughness. Sci Rep 2018; 8:12283. [PMID: 30115937 PMCID: PMC6095879 DOI: 10.1038/s41598-018-29652-8] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2018] [Accepted: 07/12/2018] [Indexed: 11/29/2022] Open
Abstract
Hierarchical nanostructures are ideal architectures to harvest solar energy. The understanding of light absorption in single hierarchical structures is emergently important and greatly helpful in enhancing multiscale optical phenomena and light management. However, due to the geometrical complexity of hierarchical architectures, theoretical and experimental studies of light absorption have faced significant challenges. Here, we directly quantify light absorption in single hierarchical structures for the first time by utilizing VO2-based near field powermeter. It is found that light trapping is significantly enhanced in rough microwires when the roughness amplitude is comparable to the incident light wavelength. The roughness enhanced light absorption is verified as a general phenomenon on both VO2 and Si hierarchical structures. Therefore, our work not only provides a simple and quantitative method of measuring light absorption upon single geometrically complex structures in micro/nanoscale, but also contributes a general rule to rationally design of hierarchical structures for enhanced performance in photoelectric and photochemical applications.
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Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Weijun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Nianduo Cai
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Pengcheng Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Dejun Kong
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, New South Wales, 2751, Australia
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
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42
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Ahmad H, Tamil T. High responsivity, self-powered carbon–zinc oxide hybrid thin film based photodetector. APPLIED NANOSCIENCE 2018. [DOI: 10.1007/s13204-018-0842-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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43
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Vilaplana R, Parra SG, Jorge-Montero A, Rodríguez-Hernández P, Munoz A, Errandonea D, Segura A, Manjón FJ. Experimental and Theoretical Studies on α-In2Se3 at High Pressure. Inorg Chem 2018; 57:8241-8252. [DOI: 10.1021/acs.inorgchem.8b00778] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Rosario Vilaplana
- Centro de Tecnologías Físicas, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Samuel Gallego Parra
- Instituto de Diseño para la Fabricación y Producción Automatizada, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Alejandro Jorge-Montero
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Plácida Rodríguez-Hernández
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Alfonso Munoz
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Daniel Errandonea
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, 46100 Burjassot, Spain
| | - Alfredo Segura
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, 46100 Burjassot, Spain
| | - Francisco Javier Manjón
- Instituto de Diseño para la Fabricación y Producción Automatizada, Universitat Politècnica de València, 46022 Valencia, Spain
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44
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Wu P, Song X, Si S, Ke Z, Cheng L, Li W, Xiao X, Jiang C. Significantly enhanced visible light response in single TiO 2 nanowire by nitrogen ion implantation. NANOTECHNOLOGY 2018; 29:184005. [PMID: 29451496 DOI: 10.1088/1361-6528/aab014] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The metal-oxide semiconductor TiO2 shows enormous potential in the field of photoelectric detection; however, UV-light absorption only restricts its widespread application. It is considered that nitrogen doping can improve the visible light absorption of TiO2, but the effect of traditional chemical doping is far from being used for visible light detection. Herein, we dramatically broadened the absorption spectrum of the TiO2 nanowire (NW) by nitrogen ion implantation and apply the N-doped single TiO2 NW to visible light detection for the first time. Moreover, this novel strategy effectively modifies the surface states and thus regulates the height of Schottky barriers at the metal/semiconductor interface, which is crucial to realizing high responsivity and a fast response rate. Under the illumination of a laser with a wavelength of 457 nm, our fabricated photodetector exhibits favorable responsivity (8 A W-1) and a short response time (0.5 s). These results indicate that ion implantation is a promising method in exploring the visible light detection of TiO2.
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Affiliation(s)
- Pengcheng Wu
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, Institute of Technological Sciences of Wuhan University, Wuhan University, Wuhan 430072, People's Republic of China
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Zhao X, Liu T, Cui Y, Hou X, Liu Z, Dai X, Kong J, Shi W, Dennis TJS. Antisolvent-assisted controllable growth of fullerene single crystal microwires for organic field effect transistors and photodetectors. NANOSCALE 2018; 10:8170-8179. [PMID: 29676419 DOI: 10.1039/c8nr01305e] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
There are only a few reported methods by which the size and morphology of organic single crystals for high-performance organic field-effect transistors (OFETs) or other devices can be controlled. Here, a facile solution-processed antisolvent vapor diffusion method was employed to grow millimeter-length C60 single crystal microwires directly in solution. The size of the microwires can be controllably varied via the C60 concentration and/or the choice of antisolvent. OFETs fabricated from the as-produced microwires exhibit mobilities as high as 2.30 cm2 V-1 s-1. A clear relationship between the crystal preparation conditions and device performance is revealed whereby it is observed that the lower the evaporation rate of antisolvent and/or the higher the C60 concentration, the higher the device performance. Photodetectors based on our microwires give a responsivity that is an order of magnitude higher than those grown by drop-casting methods. This study provides a facile method for the crystal engineering of size-tunable millimeter-length C60 single crystals, and revealed the important influences of the antisolvent on the C60 crystal size and the performance of devices based on them. We believe that our processing approach can be further exploited for a broad range of other organic semiconductors to achieve desirable single crystal size and morphology and thus obtain desirable OFETs and photodetector performance.
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Affiliation(s)
- Xiaoming Zhao
- School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, UK.
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46
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Chen YZ, Wang SW, Su TY, Lee SH, Chen CW, Yang CH, Wang K, Kuo HC, Chueh YL. Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1704052. [PMID: 29707890 DOI: 10.1002/smll.201704052] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2017] [Revised: 02/06/2018] [Indexed: 05/04/2023]
Abstract
Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W-1 and an on/off current ratio of up to 102 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests.
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Affiliation(s)
- Yu-Ze Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Sheng-Wen Wang
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Teng-Yu Su
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Shao-Hsin Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chia-Wei Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chen-Hua Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Kuangye Wang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Hao-Chung Kuo
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
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47
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Zhang G, Luo W, Qin Q, Liu Y, Jin C, Hao J, Zhang J, Zheng W. Ionic liquid bifunctionally modulated aggregation-coalescence mechanism to synthesize SnSe single-crystal nanorod/nanoparticle core shell nanostructures and single-crystal nanorods for optoelectronics. CrystEngComm 2018. [DOI: 10.1039/c7ce02156a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Ionic liquid-bifunctional modulated synthesis of SnSe nanorafts and nanorods for optoelectronics.
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Affiliation(s)
- Guofeng Zhang
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Wenhao Luo
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Qing Qin
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Yanxia Liu
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Cen Jin
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Jing Hao
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Jing Zhang
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
| | - Wenjun Zheng
- Department of Chemistry
- Key Laboratory of Advanced Energy Materials Chemistry (MOE)
- TKL of Metal and Molecule-Based Materials Chemistry
- College of Chemistry
- Nankai University
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Qin J, Qiu G, Jian J, Zhou H, Yang L, Charnas A, Zemlyanov DY, Xu CY, Xu X, Wu W, Wang H, Ye PD. Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications. ACS NANO 2017; 11:10222-10229. [PMID: 28949510 DOI: 10.1021/acsnano.7b04786] [Citation(s) in RCA: 92] [Impact Index Per Article: 13.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hindered the exploration of its potential applications. In this work, using a physical vapor deposition method, we have demonstrated the synthesis of large-size, high-quality 2D selenium nanosheets, the minimum thickness of which could be as thin as 5 nm. The Se nanosheet exhibits a strong in-plane anisotropic property, which is determined by angle-resolved Raman spectroscopy. Back-gating field-effect transistors based on a Se nanosheet exhibit p-type transport behaviors with on-state current density around 20 mA/mm at Vds = 3 V. Four-terminal field-effect devices are also fabricated to evaluate the intrinsic hole mobility of the selenium nanosheet, and the value is determined to be 0.26 cm2 V-1 s-1 at 300 K. The selenium nanosheet phototransistors show an excellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s and fall time of 0.12 s. These results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications.
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Affiliation(s)
- Jingkai Qin
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
- School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - Gang Qiu
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Jie Jian
- School of Materials Science and Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Hong Zhou
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Lingming Yang
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Adam Charnas
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Dmitry Y Zemlyanov
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001, People's Republic of China
| | - Xianfan Xu
- School of Mechanical Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industry Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
- School of Materials Science and Engineering, Purdue University , West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47907, United States
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Zheng Z, Yao J, Wang B, Yang G. A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology. NANOTECHNOLOGY 2017; 28:415501. [PMID: 28758899 DOI: 10.1088/1361-6528/aa8317] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.
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Affiliation(s)
- Zhaoqiang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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Hsu YC, Hung YC, Wang CY. Controlling Growth High Uniformity Indium Selenide (In 2Se 3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature. NANOSCALE RESEARCH LETTERS 2017; 12:532. [PMID: 28916974 PMCID: PMC5602810 DOI: 10.1186/s11671-017-2302-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2017] [Accepted: 09/04/2017] [Indexed: 06/07/2023]
Abstract
High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In2Se3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In2Se3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In2Se3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In2Se3 vapor and produce the high uniformity In2Se3 nanowires. The in situ annealing TEM is used to realize the effect of heating rate on Au nanoparticle formation from the as-deposited Au film. The byproduct of self-catalyzed In2Se3 nanoplates can be inhibited by lowering the precursors and growth temperatures.
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Affiliation(s)
- Ya-Chu Hsu
- Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Yu-Chen Hung
- Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Chiu-Yen Wang
- Department of Material Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.
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