Polar metals by geometric design

The anti-distortive polaron as an alternative mechanism for lattice-mediated charge trapping

Polarons can naturally form in materials from the interaction of extra charge carriers with the atomic lattice. Ubiquitous, they are central to various phenomena such as high-Tc superconductivity, electrochromism, photovoltaics, photocatalysis or ion batteries. However, polaron formation remains poorly understood and mostly relies on historical models such as Landau-Pekar, Fröhlich, Holstein or Jahn-Teller polarons. Here, from advanced first-principles calculations, we show that the formation of intriguing medium-sized polarons in WO3 does not fit with traditional models but instead arises from the local undoing of distortive atomic motions inherent to the pristine phase, which lowers the bandgap through dynamical covalency effects and drives charge trapping. We introduce the concept of the anti-distortive polaron and rationalize it from a quantum-dot model. We demonstrate that anti-distortive polarons are generic to different families of compounds and clarify how this new concept opens concrete perspectives for a better control of the polaronic state and related properties.

Two-Dimensional Topological Ferroelectric Metal with Giant Shift Current

The pursuit for "ferroelectric metal," which combines seemingly incompatible spontaneous electric polarization and metallicity, has been assiduously ongoing but remains elusive. Unlike traditional ferroelectrics with a wide band gap, ferroelectric (FE) metals can naturally incorporate nontrivial band topology near the Fermi level, endowing them with additional exotic properties. Here, we show first-principles evidence that the metallic PtBi_{2} monolayer is an intrinsic two-dimensional (2D) topological FE metal, characterized by out-of-plane polarization and a moderate switching barrier. Moreover, it exhibits a topologically nontrivial electronic structure with Z_{2} invariant equal to 1, leading to a significant FE bulk photovoltaic effect. A slight strain can further enhance this effect to a remarkable level, which far surpasses that of previously reported 2D and 3D FE materials. Our Letter provides an important step toward realizing intrinsic monolayer topological FE metals and paves a promising way for future nonlinear optical devices.

Polar charge density wave in a superconductor with crystallographic chirality

Symmetry plays an important role in determining the physical properties in condensed matter physics, as the symmetry operations of any physical property must include the symmetry operations of the point group of the crystal. As a consequence, crystallographic polarity and chirality are expected to have an impact on the Cooper pairing in a superconductor. While superconductivity with crystallographic polarity and chirality have both been found in a few crystalline phases separately; however, their coexistence and material realizations have not been studied. Here, by utilizing transport, Raman scattering, and transmission electron microscopy, we unveil a unique realization of superconductivity in single-crystalline Mo3Al2C (superconducting Tc=8 K) with a polar charge-density-wave phase and well-defined crystallographic chirality. We show that the intriguing charge density wave order leads to a noncentrosymmetric-nonpolar to polar transition below T*=155K via breaking both the translational and rotational symmetries. Superconductivity emerges in this polar and chiral crystal structure below Tc=8 K. Our results establish that Mo3Al2C is a superconductor with crystallographic polarity and chirality simultaneously, and motivate future studies of unconventional superconductivity in this category.

Polar Metallicity Controlled by Epitaxial Strain Engineering

The discovery of polar metal opens the door to incorporating electric polarization into electronics with the potential to invigorate next-generation multifunctional electronic devices. Especially, electric polarization can be induced by geometric design in non-polar perovskite oxides. Here, the epitaxial strain exerted on the deposited single-crystalline NdNiO3 thin films is systematically varied in both sign and amplitude by choosing substrates with different lattice mismatch. The pseudocubic NdNiO3(111) film, which is non-polar in its bulk state, is induced to be polar under both compressive and tensile strain. The fine-tuning of epitaxial strain is realized by continuously varying the film thickness using the "thickness-wedge" growth technique, and from the elucidated thickness dependence, the electric polarization and metallicity can be further optimized. Moreover, transitioning from isotropic to anisotropic epitaxial strain gives rise to an ideal polar metal state in the pseudocubic NdNiO3(102) film on an orthorhombic substrate, achieving a remarkably low resistivity of 173 µΩ cm at room temperature. The metal-insulator transition in NdNiO3 is completely suppressed and the polar metal state becomes the ground state at all temperatures. These results demonstrate alluring possibilities of induction and manipulation of both electric polarization and electric transport properties in functional perovskite oxides by epitaxial strain engineering.

Signatures of polarized chiral spin disproportionation in rare earth nickelates

In rare earth nickelates (RENiO3), electron-lattice coupling drives a concurrent metal-to-insulator and bond disproportionation phase transition whose microscopic origin has long been the subject of active debate. Of several proposed mechanisms, here we test the hypothesis that pairs of self-doped ligand holes spatially condense to provide local spin moments that are antiferromagnetically coupled to Ni spins. These singlet-like states provide a basis for long-range bond and spiral spin order. Using magnetic resonant X-ray scattering on NdNiO3 thin films, we observe the chiral nature of the spin-disproportionated state, with spin spirals propagating along the crystallographic (101)ortho direction. These spin spirals are found to preferentially couple to X-ray helicity, establishing the presence of a hitherto-unobserved macroscopic chirality. The presence of this chiral magnetic configuration suggests a potential multiferroic coupling between the noncollinear magnetic arrangement and improper ferroelectric behavior as observed in prior studies on NdNiO3 (101)ortho films and RENiO3 single crystals. Experimentally-constrained theoretical double-cluster calculations confirm the presence of an energetically stable spin-disproportionated state with Zhang-Rice singlet-like combinations of Ni and ligand moments.

Informatics-Based Learning of Oxygen Vacancy Ordering Principles in Oxygen-Deficient Perovskites

Ordered oxygen vacancies (OOVs) in perovskites can exhibit long-range order and may be used to direct materials properties through modifications in electronic structures and broken symmetries. Based on the various vacancy patterns observed in previously known compounds, we explore the ordering principles of oxygen-deficient perovskite oxides with ABO2.5 stoichiometry to identify other OOV variants. We performed first-principles calculations to assess the OOV stability on a data set of 50 OOV structures generated from our bespoke algorithm. The algorithm employs uniform planar vacancy patterns on (111) pseudocubic perovskite layers and the approach proves effective for generating stable OOV patterns with minimal computational loads. We find as expected that the major factors determining the stability of OOV structures include coordination preferences of transition metals and elastic penalties resulting from the assemblies of polyhedra. Cooperative rotational modes of polyhedra within the OOV structures reduce elastic instabilities by optimizing the bond valence of A- and B cations. This finding explains the observed formation of vacancy channels along low-index crystallographic directions in prototypical OOV phases. The identified ordering principles enable us to devise other stable vacancy patterns with longer periodicity for targeted property design in yet to be synthesized compounds.

A correlated ferromagnetic polar metal by design

Polar metals have recently garnered increasing interest because of their promising functionalities. Here we report the experimental realization of an intrinsic coexisting ferromagnetism, polar distortion and metallicity in quasi-two-dimensional Ca3Co3O8. This material crystallizes with alternating stacking of oxygen tetrahedral CoO4 monolayers and octahedral CoO6 bilayers. The ferromagnetic metallic state is confined within the quasi-two-dimensional CoO6 layers, and the broken inversion symmetry arises simultaneously from the Co displacements. The breaking of both spatial-inversion and time-reversal symmetries, along with their strong coupling, gives rise to an intrinsic magnetochiral anisotropy with exotic magnetic field-free non-reciprocal electrical resistivity. An extraordinarily robust topological Hall effect persists over a broad temperature-magnetic field phase space, arising from dipole-induced Rashba spin-orbit coupling. Our work not only provides a rich platform to explore the coupling between polarity and magnetism in a metallic system, with extensive potential applications, but also defines a novel design strategy to access exotic correlated electronic states.

Control of Polarity in Kagome-NiAs Bismuthides

A 2×2×1 superstructure of the P63/mmc NiAs structure is reported in which kagome nets are stabilized in the octahedral transition metal layers of the compounds Ni0.7Pd0.2Bi, Ni0.6Pt0.4Bi, and Mn0.99Pd0.01Bi. The ordered vacancies that yield the true hexagonal kagome motif lead to filling of trigonal bipyramidal interstitial sites with the transition metal in this family of "kagome-NiAs" type materials. Further ordering of vacancies within these interstitial layers can be compositionally driven to simultaneously yield kagome-connected layers and a net polarization along the c axes in Ni0.9Bi and Ni0.79Pd0.08Bi, which adopt Fmm2 symmetry. The polar and non-polar materials exhibit different electronic transport behaviour, reflecting the tuneability of both structure and properties within the NiAs-type bismuthide materials family.

Novel 2DEG System at the HfO2/STO Interface

Multifunctional integration in a single device has always been a hot research topic, especially for contradictory phenomena, one of which is the coexistence of ferroelectricity and metallicity. The complex oxide heterostructures, as symmetric breaking systems, provide a great possibility to incorporate different properties. Moreover, finding a series of oxide heterostructures to achieve this goal remains as a challenge. Here, taking the advantage of different physical phenomena, we use H2 plasma to pretreat the SrTiO3 (STO) substrate and then fabricate HfO2/STO heterostructures with it. The novel, well-repeatable metallic two-dimensional electron gas (2DEG) is directly obtained at the heterointerfaces without any further complex procedures, while the obvious ferroelectric-like behavior and Rashba spin-orbit coupling are also observed. The understanding of the mechanism, as well as the modified facile preparation procedure, would be meaningful for further development of ferroelectric metal in complex oxide heterostructures.

Nonzero spontaneous electric polarization in metals: novel predictive methods and applications

Ferroelectricity in metals has advanced since the initial discovery of nonmagnetic ferroelectric-like metal LiOsO[Formula: see text], anchored in the Anderson and Blount prediction. However, evaluating the spontaneous electric polarization (SEP) of this metal has been hindered by experimental and theoretical obstacles. The experimental challenge arises from difficulties in switching polarization using an external electric field, while the theoretical limitation lies in existing methods applicable only to nonmetals. Zabalo and Stengel (Phys Rev Lett 126:127601, 2021, https://doi.org/10.1103/PhysRevLett.126.127601 ) addressed the experimental obstacle by proposing flexoelectricity as an alternative for practical polarization switching in LiOsO[Formula: see text], which requires a critical bending radius similar to BaTiO[Formula: see text]. In this study, we focus on resolving the theoretical obstacle by modifying the Berry phase and Wannier functions approaches within density functional theory plus modern theory of polarization. By employing these modifications, we calculate the SEP of LiOsO[Formula: see text], comparable to the polarization of BaTiO[Formula: see text]. We validate our predictions using various ways. This study confirms the coexistence of ferroelectricity and metallicity in this new class of ferroelectric-like metals. Moreover, by addressing the theoretical limitation and providing new insights into polarization properties, our study complements the experimental flexoelectricity proposal and opens avenues for further exploration and manipulation of polarization characteristics. The developed approaches, incorporating modified Berry phase and Wannier function techniques, offer promising opportunities for studying and designing novel materials, including bio- and nano-ferroelectric-like metals. This study contributes to the advancement of ferroelectricity in metals and provides a foundation for future research in this exciting field.

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.

Polar metals in strain-engineered KNbO3/CaNbO3 superlattices: a first-principles study

Polar metals have generated significant interest since the ferroelectric-like structural transition in metallic LiOsO3 was discovered. Herein, we report on a strain-modulated polar metal in the ferroelectric/metal superlattice of 1 : 1 KNbO3/CaNbO3. Using first-principles calculations, we have investigated the structural distortions, including polar distortions and octahedral rotations, and layer-by-layer electronic structures in the KNbO3/CaNbO3 superlattice under different epitaxial strains. Along the stacking direction, the superlattice has almost parallel polar displacements under compressive strain, whereas both in-plane and out-of-plane antiferroelectric-like polar displacements are robust under intermediate strain, which is connected to the octahedral tilting pattern and interlayer electron transfer. In addition, the in-plane polar distortions are enhanced by tensile strains and have a sudden increase at 4% tensile strain. The metallicity is mainly contributed by d electrons from Nb atoms. And orbital-resolved electron distributions in each layer show that d-orbital splitting is related not only to the epitaxial strain but also to the direction of polar displacements. Our results suggest an efficient way to tune polar distortions as well as local metallicity via epitaxial strains in the superlattice.

Monolayer polar metals with large piezoelectricity derived from MoSi2N4

The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of the MoSi2N4 family by breaking the out-of-plane structural symmetry through Z (P/As) substitution of N. Despite the semiconducting nature of MoSi2X4 (X = N/P/As), four Janus MoSi2NxZ4-x monolayers are found to be polar metals owing to the weak coupling between the conducting electrons and electric polarity. The metallicity is originated from the Z substitution induced delocalization of occupied electrons in Mo-d orbitals. The out-of-plane electric polarizations around 1.5-15.7 pC m-1 are determined by the asymmetric out-of-plane charge distribution due to the non-centrosymmetric Janus structure. The corresponding out-of-plane piezoelectricity is further revealed as high as 18.7-73.3 pC m-1 and 0.05-0.25 pm V-1 for the piezoelectric strain and stress coefficients, respectively. The results demonstrate polar metallicity and high out-of-plane piezoelectricity in Janus MoSi2NxZ4-x monolayers and open new vistas for exploiting unusual coexisting properties in monolayers derived from the MoSi2N4 family.

Ferroic Phases in Two-Dimensional Materials

Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

Towards two-dimensional van der Waals ferroelectrics

The discovery of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials has brought important functionalities to the 2D materials family, and may trigger a revolution in next-generation nanoelectronics and spintronics. In this Perspective, we briefly review recent progress in the field of 2D vdW ferroelectrics, focusing on the mechanisms that drive spontaneous polarization in 2D systems, unique properties brought about by the reduced lattice dimensionality and promising applications of 2D vdW ferroelectrics. We finish with an outlook for challenges that need to be addressed and our view on possible future research directions.

High-Throughput Scanning Second-Harmonic-Generation Microscopy for Polar Materials

The Materials Genome Initiative aims to discover, develop, manufacture, and deploy advanced materials at twice the speed of conventional approaches. To achieve this, high-throughput characterization is essential for the rapid screening of candidate materials. In this study, a high-throughput scanning second-harmonic-generation microscope with automatic partitioning, accurate positioning, and fast scanning is developed that can rapidly probe and screen polar materials. Using this technique, typical ferroelectrics, including periodically poled lithium niobate crystals and PbZr_0.2 Ti_0.8 O₃ (PZT) thin films are first investigated, whereby the microscopic domain structures are clearly revealed. This technique is then applied to a compositional-gradient (100-x)%BaTiO₃ -x%SrTiO₃ film and a thickness-gradient PZT film to demonstrate its high-throughput capabilities. Since the second-harmonic-generation signal is correlated with the macroscopic remnant polarization over the probed region determined by the laser spot, it is free of artifacts arising from leakage current and electrostatic interference, while materials' symmetries and domain structures must be carefully considered in the data analysis. It is believed that this work can help promote the high-throughput development of polar materials and contribute to the Materials Genome Initiative.

Designing spin and orbital sources of Berry curvature at oxide interfaces

Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO₃/SrTiO₃ interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Extended Oxygen Octahedral Tilt Proximity near Oxide Heterostructures

The oxide interfaces between materials with different structural symmetries have been actively studied due to their novel physical properties. However, the investigation of intriguing interfacial phenomena caused by the oxygen octahedral tilt (OOT) proximity effect has not been fully exploited, as there is still no clear understanding of what determines the proximity length and what the underlying control mechanism is. Here, we achieved scalability of the OOT proximity effect in SrRuO₃ (SRO) by epitaxial strain near the SRO/SrTiO₃ heterointerface. We demonstrated that the OOT proximity length scale of SRO is extended from 4 unit cells to 14 unit cells by employing advanced scanning transmission electron microscopy. We also suggest that this variation may originate from changes in phonon dispersions due to electron-phonon coupling in SRO. This study will provide in-depth insights into the structural gradients of correlated systems and facilitate potential device applications.

Optimized design of block copolymers with covarying properties for nanolithography

The ability to impart multiple covarying properties into a single material represents a grand challenge in manufacturing. In the design of block copolymers (BCPs) for directed self-assembly and nanolithography, materials often balance orthogonal properties to meet constraints related to processing, structure and defectivity. Although iterative synthesis strategies deliver BCPs with attractive properties, identifying materials with all the required attributes has been difficult. Here we report a high-throughput synthesis and characterization platform for the discovery and optimization of BCPs with A-block-(B-random-C) architectures for lithographic patterning in semiconductor manufacturing. Starting from a parent BCP and using thiol-epoxy 'click' chemistry, we synthesize a library of BCPs that cover a large and complex parameter space. This allows us to readily identify feature-size-dependent BCP chemistries for 8-20-nm-pitch patterns. These blocks have similar surface energies for directed self-assembly, and control over the segregation strength to optimize the structure (favoured at higher segregation strengths) and defectivity (favoured at lower segregation strengths).

Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe2 Lateral Heterostructure

When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe₂ by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x², indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.

Thin-Film Ferroelectrics

Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.

Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor

The monoclinic α-Cu₂Se phase is the first multipolar antiferroelectric semiconductor identified recently by electron microscopy. As a semiconductor, although there are no delocalized electrons to form a static macroscopic polarization, a spontaneous and localized antiferroelectric polarization was found along multiple directions. In conventional ferroelectrics, the polarity can be switched by an applied electric field, and a ferroelectric to paraelectric transition can be modulated by temperature. Here, we show that a reversible and robust antiferroelectric to paraelectric switching in a Cu₂Se semiconductor can be tuned electrically by low-voltage and high-frequency electric pulses, and the structural transformations are imaged directly by transmission electron microscopy (TEM). The atomic mechanism of the transformation was assigned to an electrically triggered cation rearrangement with a low-energy barrier. Due to differences of the antiferroelectric and paraelectric phases regarding their electrical, mechanical, and optical properties, such an electrically tunable transformation has a great potential in various applications in microelectronics.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

Electroresistance in multipolar antiferroelectric Cu2Se semiconductor

Electric field-induced changes in the electrical resistance of a material are considered essential and enabling processes for future efficient large-scale computations. However, the underlying physical mechanisms of electroresistance are currently remain largely unknown. Herein, an electrically reversible resistance change has been observed in the thermoelectric α-Cu2Se. The spontaneous electric dipoles formed by Cu+ ions displaced from their positions at the centers of Se-tetrahedrons in the ordered α-Cu2Se phase are examined, and α-Cu2Se phase is identified to be a multipolar antiferroelectric semiconductor. When exposed to the applied voltage, a reversible switching of crystalline domains aligned parallel to the polar axis results in an observed reversible resistance change. The study expands on opportunities for semiconductors with localized polar symmetry as the hardware basis for future computational architectures.

Two-dimensional ferroelectric metal for electrocatalysis

The coexistence of metallicity and ferroelectricity has been an intriguing and controversial phenomenon as these two material properties are considered incompatible in bulk. We clarify the concept of the ferroelectric metal by revisiting the original definitions for ferroelectric and metal. Two-dimensional (2D) ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal characterized by switchable polarization and non-zero density of states at the Fermi level. We demonstrate that 2D ferroelectric metals can serve as electrically-tunable, high-quality electrocatalysts.

Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films

Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO₃ and NdNiO₃ thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO₃ layer in LaNiO₃/NdNiO₃ bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO₃. Modification of the NdNiO₃ template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO₆ octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.

Pressure-induced metal-insulator transition in oxygen-deficient LiNbO3-type ferroelectrics

Hydrostatic pressure and oxygen vacancies usually have deleterious effects on ferroelectric materials because both tend to reduce their polarization. In this work we use first-principles calculations to study an important class of ferroelectric materials-LiNbO₃-type ferroelectrics (LiNbO₃as the prototype), and find that in oxygen-deficient LiNbO_3-δ, hydrostatic pressure induces an unexpected metal-insulator transition between 8 and 9 GPa. Our calculations also find that strong polar displacements persist in both metallic and insulating oxygen-deficient LiNbO_3-δand the size of polar displacements is comparable to pristine LiNbO₃under the same pressure. These properties are distinct from widely used perovskite ferroelectric oxide BaTiO₃, whose polarization is quickly suppressed by hydrostatic pressure and/or oxygen vacancies. The anomalous pressure-driven metal-insulator transition in oxygen-deficient LiNbO_3-δarises from the change of an oxygen vacancy defect state. Hydrostatic pressure increases the polar displacements of oxygen-deficient LiNbO_3-δ, which reduces the band width of the defect state and eventually turns it into an in-gap state. In the insulating phase, the in-gap state is further pushed away from the conduction band edge under hydrostatic pressure, which increases the fundamental gap. Our work shows that for LiNbO₃-type strong ferroelectrics, oxygen vacancies and hydrostatic pressure combined can lead to new phenomena and potential functions, in contrast to the harmful effects occurring to perovskite ferroelectric oxides such as BaTiO₃.

Local-electrostatics-induced oxygen octahedral distortion in perovskite oxides and insight into the structure of Ruddlesden-Popper phases

As the physical properties of ABX₃ perovskite-based oxides strongly depend on the geometry of oxygen octahedra containing transition-metal cations, precise identification of the distortion, tilt, and rotation of the octahedra is an essential step toward understanding the structure-property correlation. Here we discover an important electrostatic origin responsible for remarkable Jahn-Teller-type tetragonal distortion of oxygen octahedra during atomic-level direct observation of two-dimensional [AX] interleaved shear faults in five different perovskite-type materials, SrTiO₃, BaCeO₃, LaCoO₃, LaNiO₃, and CsPbBr₃. When the [AX] sublayer has a net charge, for example [LaO]⁺ in LaCoO₃ and LaNiO₃, substantial tetragonal elongation of oxygen octahedra at the fault plane is observed and this screens the strong repulsion between the consecutive [LaO]⁺ layers. Moreover, our findings on the distortion induced by local charge are identified to be a general structural feature in lanthanide-based A_n + 1B_nX_3n + 1-type Ruddlesden-Popper (RP) oxides with charged [LnO]⁺ (Ln = La, Pr, Nd, Eu, and Gd) sublayers, among more than 80 RP oxides and halides with high symmetry. The present study thus demonstrates that the local uneven electrostatics is a crucial factor significantly affecting the crystal structure of complex oxides.

Physics-Based Feature Makes Machine Learning Cognizing Crystal Properties Simple

Machine learning (ML) accelerates the rational design and discovery of materials, where the feature plays a critical role in the ML model training. We propose a low-cost electron probability waves (EPW) descriptor based on electronic structures, which is extracted from high-symmetry points in the Brillouin zone. In the task of distinguishing ferromagnetic or antiferromagnetic material, it achieves an accuracy (ACC) at 0.92 and an area under the receiver operating characteristic curve (AUC) at 0.83 by 10-fold cross-validation. Furthermore, EPW excels at classifying metal/semiconductors and judging the direct/indirect bandgap of semiconductors. The distribution of electron clouds is an essential criterion for the origin of ferromagnetism, and EPW acts as an emulation of the electronic structure, which is the key to the achievements. Our EPW-based ML model obtains ACC and AUC equivalent to crystal graph features-based deep learning models for tasks with physical recognitions in electronic states.

Direct measurement of ferroelectric polarization in a tunable semimetal

Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe₂, a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables measurement of the spontaneous polarization as free carriers are added to the system. Here we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe₂ to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe₂ is thus shown to be a fully tunable ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.

Controlling Strain Relaxation by Interface Design in Highly Lattice-Mismatched Heterostructure

Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.

Free-Carrier-Induced Ferroelectricity in Layered Perovskites

Doping ferroelectrics with carriers is often detrimental to polarization. This makes the design and discovery of metals that undergo a ferroelectriclike transition challenging. In this Letter, we show from first principles that the oxygen octahedral rotations in perovskites are often enhanced by electron doping, and this can be used as a means to strengthen the structural polarization in certain hybrid-improper ferroelectrics-compounds in which the polarization is not stabilized by the long-range Coulomb interactions but is instead induced by a trilinear coupling to octahedral rotations. We use this design strategy to predict a cation ordered Ruddlesden-Popper compound that can be driven into a metallic ferroelectriclike phase via electrolyte gating.

A two-dimensional multiferroic metal with voltage-tunable magnetization and metallicity

We design a multiferroic metal that combines seemingly incompatible ferromagnetism, ferroelectricity, and metallicity by hole doping a two-dimensional (2D) ferroelectric with high density of states near the Fermi level. The strong magnetoelectric effect is demonstrated in hole-doped and arsenic-doped monolayer α-In₂Se₃ using first-principles calculations. Taking advantage of the oppositely charged surfaces created by an out-of-plane polarization, the 2D magnetization and metallicity can be electrically switched on and off in an asymmetrically doped monolayer. The substitutional arsenic defect pair exhibits an intriguing electric field-tunable charge disproportionation process accompanied by an on-off switch of local magnetic moments. The charge ordering process can be controlled by tuning the relative strength of on-site Coulomb repulsion and defect dipole-polarization coupling via strain engineering. Our design principle relying on no transition metal broadens the materials design space for 2D multiferroic metals.

Extreme Ultraviolet Second Harmonic Generation Spectroscopy in a Polar Metal

The coexistence of ferroelectricity and metallicity seems paradoxical, since the itinerant electrons in metals should screen the long-range dipole interactions necessary for dipole ordering. The recent discovery of the polar metal LiOsO3 was therefore surprising [as discussed earlier in Y. Shi et al., Nat. Mater. 2013, 12, 1024]. It is thought that the coordination preferences of the Li play a key role in stabilizing the LiOsO3 polar metal phase, but an investigation from the combined viewpoints of core-state specificity and symmetry has yet to be done. Here, we apply the novel technique of extreme ultraviolet second harmonic generation (XUV-SHG) and find a sensitivity to the broken inversion symmetry in the polar metal phase of LiOsO3 with an enhanced feature above the Li K-edge that reflects the degree of Li atom displacement as corroborated by density functional theory calculations. These results pave the way for time-resolved probing of symmetry-breaking structural phase transitions on femtosecond time scales with element specificity.

Interplay between ferroelectricity and metallicity in BaTiO3

We explore the interplay between ferroelectricity and metallicity, which are generally considered to be contra-indicated properties, in the prototypical ferroelectric barium titanate, BaTiO₃. Using first-principles density functional theory, we calculate the effects of electron and hole doping, first by introducing a hypothetical background charge, and second through the introduction of explicit impurities (La, Nb and V for electron doping, and K, Al and Sc for hole doping). We find that, apart from a surprising increase in polarization at small hole concentrations, both charge-carrier types decrease the tendency towards ferroelectricity, with the strength of the polarization suppression, which is different for electrons and holes, determined by the detailed structure of the conduction and valence bands. Doping with impurity atoms increases the complexity and allows us to identify three factors that influence the ferroelectricity: structural effects arising largely from the size of the impurity ion, electronic effects from the introduction of charge carriers, and changes in unit-cell volume and shape. A competing balance between these contributions can result in an increase or decrease in ferroelectricity with doping.

Electric Field-Induced Polarization Responses of Noncentrosymmetric Crystalline Biopolymers in Different Frequency Regimes - A Case Study on Unidirectionally Aligned β-Chitin Crystals

A dielectric medium containing noncentrosymmetric domains can exhibit piezoelectric and second-harmonic generation (SHG) responses when an electric field is applied. Since many crystalline biopolymers have noncentrosymmetric structures, there has been a great deal of interest in exploiting their piezoelectric and SHG responses for electromechanical and electro-optic devices, especially owing to their advantages such as biocompatibility and low density. However, exact mechanisms or origins of such polarization responses of crystalline biopolymers remain elusive due to the convolution of responses from multiple domains with varying degrees of structural disorder or difficulty of ensuring the unidirectional alignment of noncentrosymmetric domains. In this study, we investigate the polarization responses of a noncentrosymmetric crystalline biopolymer, namely, unidirectionally aligned β-chitin crystals interspersed in the amorphous protein matrix, which can be obtained naturally from tubeworm Lamellibrachia satsuma (LS) tube. The mechanisms governing polarization responses in different dynamic regimes covering optical (>10¹³ Hz), acoustic/ultrasonic (10³-10⁵ Hz), and low (10^-2-10² Hz) frequencies are explained. Relationships between the polarization responses dominant in different frequencies are addressed. Also, electromechanical coupling responses, including piezoelectricity of the LS tube, are quantitatively discussed. The findings of this study can be applicable to other noncentrosymmetric crystalline biopolymers, elucidating their polarization responses.

Metal-ferroelectric supercrystals with periodically curved metallic layers

Simultaneous manipulation of multiple boundary conditions in nanoscale heterostructures offers a versatile route to stabilizing unusual structures and emergent phases. Here, we show that a stable supercrystal phase comprising a three-dimensional ordering of nanoscale domains with tailored periodicities can be engineered in PbTiO₃-SrRuO₃ ferroelectric-metal superlattices. A combination of laboratory and synchrotron X-ray diffraction, piezoresponse force microscopy, scanning transmission electron microscopy and phase-field simulations reveals a complex hierarchical domain structure that forms to minimize the elastic and electrostatic energy. Large local deformations of the ferroelectric lattice are accommodated by periodic lattice modulations of the metallic SrRuO₃ layers with curvatures up to 10⁷ m^-1. Our results show that multidomain ferroelectric systems can be exploited as versatile templates to induce large curvatures in correlated materials, and present a route for engineering correlated materials with modulated structural and electronic properties that can be controlled using electric fields.

Switching a Polar Metal via Strain Gradients

Although rare, spontaneous breakdown of inversion symmetry sometimes occurs in a material which is metallic: these are commonly known as polar metals or ferroelectric metals. Their polarization, however, is difficult to switch via an electric field, which limits the experimental control over band topology. Here we investigate, via first-principles theory, flexoelectricity as a possible way around this obstacle with the well-known polar metal LiOsO_{3}. The flexocoupling coefficients are computed for this metal with high accuracy with an approach based on real-space sums of the interatomic force constants. A Landau-Ginzburg-Devonshire-type first-principles Hamiltonian is built and a critical bending radius to switch the material is estimated, whose order of magnitude is comparable to that of BaTiO_{3}.

Proximate Quantum Spin Liquid on Designer Lattice

Complementary to bulk synthesis, here we propose a designer lattice with extremely high magnetic frustration and demonstrate the possible realization of a quantum spin liquid state from both experiments and theoretical calculations. In an ultrathin (111) CoCr₂O₄ slice composed of three triangular and one kagome cation planes, the absence of a spin ordering or freezing transition is demonstrated down to 0.03 K, in the presence of strong antiferromagnetic correlations in the energy scale of 30 K between Co and Cr sublattices, leading to the frustration factor of ∼1000. Persisting spin fluctuations are observed at low temperatures via low-energy muon spin relaxation. Our calculations further demonstrate the emergence of highly degenerate magnetic ground states at the 0 K limit, due to the competition among multiply altered exchange interactions. These results collectively indicate the realization of a proximate quantum spin liquid state on the synthetic lattice.

Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing

Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La_2/3 Sr_1/3 MnO_{3- δ} film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.

Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric

Solid-liquid interface is a key concept of many research fields, enabling numerous physical phenomena and practical applications. For example, electrode-electrolyte interfaces with electric double layers have been widely used in energy storage and regulating physical properties of functional materials. Creating a specific interface allows emergent functionalities and effects. Here, we show the artificial control of ferroelectric-liquid interfacial structures to switch polarization states reversibly in a van der Waals layered ferroelectric CuInP₂S₆ (CIPS). We discover that upward and downward polarization states can be induced by spontaneous physical adsorption of dodecylbenzenesulphonate anions and N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium cations, respectively, at the ferroelectric-liquid interface. This distinctive approach circumvents the structural damage of CIPS caused by Cu-ion conductivity during electrical switching process. Moreover, the polarized state features super-long retention time (>1 year). The interplay between ferroelectric dipoles and adsorbed organic ions has been studied systematically by comparative experiments and first-principles calculations. Such ion adsorption-induced reversible polarization switching in a van der Waals ferroelectric enriches the functionalities of solid-liquid interfaces, offering opportunities for liquid-controlled two-dimensional ferroelectric-based devices.

Whether it is possible to achieve polarization inversion in a ferroelectric without any energy consumption is an open question. Here, the authors demonstrate an energy-free approach to control the polarization state of CuInP₂S₆, a typical room-temperature van der Waals layered ferroelectric.

Electric Polarization Switching on an Atomically Thin Metallic Oxide

Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom. Polarization switching and metallic screening are well-known examples of mutually exclusive properties that cannot coexist in bulk solids. Here we report the fabrication of (SrRuO₃)₁/(BaTiO₃)₁₀ superlattices that exhibits reversible polarization switching in an atomically thin metallic layer. A multipronged investigation combining structural analyses, electrical measurements, and first-principles electronic structure calculations unravels the coexistence of two-dimensional (2D) metallicity in the SrRuO₃ layer accompanied by the breaking of inversion symmetry, supporting electric polarization along the out-of-plane direction. Such a 2D ferroelectric-like metal paves a novel way to engineer a quantum multistate with unusual coexisting properties, such as ferroelectrics and metals, manipulated by external fields.

Metallic line defect in wide-bandgap transparent perovskite BaSnO3

A line defect with metallic characteristics has been found in optically transparent BaSnO₃ perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level-crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO₃ films.

Oxygen-Induced Reversible Sn-Dopant Deactivation between Indium Tin Oxide and Single-Crystalline Oxide Nanowire Leading to Interfacial Switching

An impurity doping in semiconductors is an important irreversible process of manipulating the electrical properties of advanced electron devices. Here, we report an unusual reversible dopant activation/deactivation phenomenon, which emerges at an interface between indium tin oxide (ITO) and single-crystalline oxide channel. We found that the interface electrical resistance between ITO electrodes and single-crystalline oxide nanowire channel can be repeatedly switched between a metallic state and a near-insulative state by applying thermal treatments in air or vacuum. Interestingly, this electrical switching phenomenon disappears when the oxide nanowire changes from the single-crystalline structure to the lithography-defined polycrystalline structure. Atmosphere-controlled annealing experiments reveal that atmospheric oxygen induces repeatable change in the interfacial electrical resistance. Systematic investigations on metal cation species and channel crystallinity demonstrate that the observed electrical switching is related to an interface-specific reversible Sn-dopant activation/deactivation of ITO electrode in contact with a single-crystalline oxide channel.

Discovery of Real-Space Topological Ferroelectricity in Metallic Transition Metal Phosphides

Ferroelectric metals-with coexisting ferroelectricity and structural asymmetry-challenge traditional perceptions because free electrons screen electrostatic forces between ions, the driving force of breaking the spatial inversion symmetry. Despite ferroelectric metals having been unveiled one after another, topologically switchable polar objects with metallicity have never been identified so far. Here, the discovery of real-space topological ferroelectricity in metallic and non-centrosymmetric Ni₂ P is reported. Protected by the rotation-inversion symmetry operation, it is found that the balanced polarity of alternately stacked polyhedra couples intimately with elemental valence states, which are verified using quantitative electron energy-loss spectroscopy. First-principles calculations reveal that an applied in-plane compressive strain creates a tunable bilinear double-well potential and reverses the polyhedral polarity on a unit-cell scale. The dual roles of nickel cations, including polar displacement inside polyhedral cages and a 3D bonding network, facilitate the coexistence of topological polarity with metallicity. In addition, the switchable in-plane polyhedral polarity gives rise to a spin-orbit-coupling-induced spin texture with large momentum-dependent spin splitting. These findings point out a new direction for exploring valence-polarity-spin correlative interactions via topological ferroelectricity in metallic systems with structural asymmetry.

Unraveling the Suppression of Oxygen Octahedra Rotations in A_{3}B_{2}O_{7} Ruddlesden-Popper Compounds: Engineering Multiferroicity and Beyond

The competition between polar distortions and BO_{6} octahedra rotations is well known to be critical in explaining the ground state of various ABO_{3} perovskites. Here, we show from first-principles calculations that a similar competition between interlayer rumpling and rotations is playing a key role in layered Ruddlesden-Popper (RP) perovskites. This competition explains the suppression of oxygen octahedra rotations and hybrid improper ferroelectricity in A_{3}B_{2}O_{7} compounds with rare-earth ions in the rocksalt layer and also appears relevant to other phenomena like negative thermal expansion and the dimensionality determined band gap in RP systems. Moreover, we highlight that RP perovskites offer more flexibility than ABO_{3} perovskites in controlling such a competition and four distinct strategies are proposed to tune it. These strategies are shown to be promising for designing new multiferroics. They are generic and might also be exploited for tuning negative thermal expansion and band gap.

Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern

Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable pattern of octahedral rotation leads to robust room-temperature ferroelectricity in CaTiO3, which is otherwise nonpolar down to 0 K. Guided by density-functional theory, we selectively stabilize the metastable pattern, distinct from the equilibrium pattern and cooperative with ferroelectricity, in heteroepitaxial films of CaTiO3. Atomic-scale imaging combined with deep neural network analysis confirms a close correlation between the metastable pattern and ferroelectricity. This work reveals a hidden but functional pattern of oxygen octahedral rotation and opens avenues for designing multifunctional materials.

Polar Metal Phase Induced by Oxygen Octahedral Network Relaxation in Oxide Thin Films

ABO₃ perovskite materials and their derivatives have inherent structural flexibility due to the corner sharing network of the BO₆ octahedron, and the large variety of possible structural distortions and strong coupling between lattice and charge/spin degrees of freedom have led to the emergence of intriguing properties, such as high-temperature superconductivity, colossal magnetoresistance, and improper ferroelectricity. Here, an unprecedented polar ferromagnetic metal phase in SrRuO₃ (SRO) thin films is presented, arising from the strain-controlled oxygen octahedral rotation (OOR) pattern. For compressively strained SRO films grown on SrTiO₃ substrate, oxygen octahedral network relaxation is accompanied by structural phase separation into strained tetragonal and bulk-like orthorhombic phases, and the asymmetric OOR evolution across the phase boundary allows formation of the polar phase, while bulk metallic and ferromagnetic properties are maintained. From the results, it is expected that other oxide perovskite thin films will also yield similar structural environments with variation of OOR patterns, and thereby provide promising opportunities for atomic scale control of material properties through strain engineering.

Two-dimensional polar metal of a PbTe monolayer by electrostatic doping

Polar metals characterized by the simultaneous coexistence of a polar structure and metallicity have been a long-sought goal due to the promise of novel electronic devices. Developing such materials at low dimensions remains challenging since both conducting electrons and reduced dimensions are supposed to quench the polar state. Here, based on first-principles calculations, we report the discovery of a non-centrosymmetric polar structure in two-dimensional (2D) metallic materials with electrostatic doping, even though ferroelectricity is unconventional at the atomic scale. We revealed that the PbTe monolayer is intrinsically ferroelectric with pronounced out-of-plane electric polarization originating from its non-centrosymmetric buckled structure. Moreover, the polar distortions can be preserved with carrier doping in the monolayer, which further enables the doped PbTe monolayer to act as a 2D polar metal. With an effective Hamiltonian extracted from the parametrized energy space, we found that the special elastic-polar mode interaction is of great importance for the existence of robust polar instability (i.e., soft phonon mode associated with polar distortion) in the doped system. The application of this doping strategy is not specific to the present crystal, but is rather general to other 2D ferroelectrics to bring about the fascinating non-centrosymmetric metallic state. Our findings thus change the conventional knowledge in 2D materials and will facilitate the development of multifunctional materials in low dimensions.