Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts

Efficient molecular doping of polymeric semiconductors improved by coupled reaction

Exploring chemical doping method to improve the electrical conductivity of polymers is still very attractive for researchers. In this work, we report a developed method of doping a polymer semiconductor aided by the coupled reaction that commonly exists in biological systems where a non-spontaneous reaction is driven by a spontaneous reaction. During the doping process, the chemical reaction between the dopant and the polymer is promoted by introducing a thermodynamically favorable reaction via adding additives that are highly reactive to the reduction product of the dopant to form a coupled reaction, thus significantly improving the electrical conductivity of polymers by 3-7 orders. This coupled reaction doping process shows the potential of wide applications in exploring efficient doping systems to prepare functional conducting polymers, which could be a powerful tool for modern organic electronics.

Counterion docking: a general approach to reducing energetic disorder in doped polymeric semiconductors

Molecular doping plays an important role in controlling the carrier concentration of organic semiconductors. However, the introduction of dopant counterions often results in increased energetic disorder and traps due to the molecular packing disruption and Coulomb potential wells. To date, no general strategy has been proposed to reduce the counterion-induced structural and energetic disorder. Here, we demonstrate the critical role of non-covalent interactions (NCIs) between counterions and polymers. Employing a computer-aided approach, we identified the optimal counterions and discovered that NCIs determine their docking positions, which significantly affect the counterion-induced energetic disorder. With the optimal counterions, we successfully reduced the energetic disorder to levels even lower than that of the undoped polymer. As a result, we achieved a high n-doped electrical conductivity of over 200 S cm-1 and an eight-fold increase in the thermoelectric power factor. We found that the NCIs have substantial effects on doping efficiency, polymer backbone planarity, and Coulomb potential landscape. Our work not only provides a general strategy for identifying the most suitable counterions but also deepens our understanding of the counterion effects on doped polymeric semiconductors.

Photocatalytic doping of organic semiconductors

Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1-3 and ultimately enhances device performance4-7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8-10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm-1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.

Regioisomeric thieno[3,4-d]thiazole-based A-Q-D-Q-A-type NIR acceptors for efficient non-fullerene organic solar cells

This study explores the potential of regioisomeric quinoidal-resonance π-spacers in designing near-infrared (NIR) non-fullerene acceptors (NFAs) for high-performance organic solar cell devices. Adopting thienothiazole as the π-spacer, two new isomeric A-Q-D-Q-A NFAs, TzN-S and TzS-S, are designed and synthesized. Both NFAs demonstrate a broad spectral response extended to the NIR region. However, they exhibit different photovoltaic properties when they were mixed with the PCE10 donor to fabricate respective solar cells. The optimal device of TzS-S achieves a PCE of 10.75%, much higher than that of TzN-S based ones (6.13%). The more favorable energetic offset and better molecular packing contribute to the better charge generation and transport, which explains the relative superiority of TzS-S NFA. This work sheds new light on the regioisomeric effect of component materials for optoelectronic applications.

Interface Engineering for Highly Efficient Organic Solar Cells

Organic solar cells (OSCs) have made dramatic advancements during the past decades owing to the innovative material design and device structure optimization, with power conversion efficiencies surpassing 19% and 20% for single-junction and tandem devices, respectively. Interface engineering, by modifying interface properties between different layers for OSCs, has become a vital part to promote the device efficiency. It is essential to elucidate the intrinsic working mechanism of interface layers, as well as the related physical and chemical processes that manipulate device performance and long-term stability. In this article, the advances in interface engineering aimed to pursue high-performance OSCs are reviewed. The specific functions and corresponding design principles of interface layers are summarized first. Then, the anode interface layer, cathode interface layer in single-junction OSCs, and interconnecting layer of tandem devices are discussed in separate categories, and the interface engineering-related improvements on device efficiency and stability are analyzed. Finally, the challenges and prospects associated with application of interface engineering are discussed with the emphasis on large-area, high-performance, and low-cost device manufacturing.

Realizing one-step two-electron transfer of naphthalene diimides via a regional charge buffering strategy for aqueous organic redox flow batteries

Naphthalene diimide derivatives show great potential for application in neutral aqueous organic redox flow batteries (AORFBs) due to their highly conjugated molecular structure and stable two-electron storage capacity. However, the two-electron redox process of naphthalene diimides typically occurs via two separate steps with the transfer of one electron per step ("two-step two-electron" transfer process), which leads to an inevitable loss of voltage and energy. Herein, we report a novel regional charge buffering strategy that utilizes the core-substituted electron-donating group to adjust the redox properties of naphthalene diimides, realizing two electron transfer via a single-step redox process ("one-step two-electron" transfer process). The symmetrical battery testing of NDI-DEtOH revealed exceptional intrinsic stability lasting for 11 days with a daily decay rate of only 0.11%. Meanwhile, AORFBs with NDI-DMe/FcNCl and NDI-DEtOH/FcNCl exhibited a remarkable 40% improvement in peak power density at 50% state of charge (SOC) in comparison to NDI/FcNCl-based AORFBs. In addition, the battery's energy efficiency has increased by 24%, resulting in much more stable output power and significantly improved energy efficiency. These results are of great significance to practical applications of AORFBs.

Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance

Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.

Doping of molecular semiconductors through proton-coupled electron transfer

The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited by the availability of dopant materials and the effects of impurities such as water. Here we focused on proton-coupled electron-transfer (PCET) reactions, which are widely used in biochemical processes3,4; their redox potentials depend on an easily handled parameter, that is, proton activity. We immersed p-type organic semiconductor thin films in aqueous solutions with PCET-based redox pairs and hydrophobic molecular ions. Synergistic reactions of PCET and ion intercalation resulted in efficient chemical doping of crystalline organic semiconductor thin films under ambient conditions. In accordance with the Nernst equation, the Fermi levels of the semiconductors were controlled reproducibly with a high degree of precision-a thermal energy of about 25 millielectronvolts at room temperature and over a few hundred millielectronvolts around the band edge. A reference-electrode-free, resistive pH sensor based on this method is also proposed. A connection between semiconductor doping and proton activity, a widely used parameter in chemical and biochemical processes, may help create a platform for ambient semiconductor processes and biomolecular electronics.

Chemically revised conducting polymers with inflammation resistance for intimate bioelectronic electrocoupling

Conducting polymers offer attractive mixed ionic-electronic conductivity, tunable interfacial barrier with metal, tissue matchable softness, and versatile chemical functionalization, making them robust to bridge the gap between brain tissue and electronic circuits. This review focuses on chemically revised conducting polymers, combined with their superior and controllable electrochemical performance, to fabricate long-term bioelectronic implants, addressing chronic immune responses, weak neuron attraction, and long-term electrocommunication instability challenges. Moreover, the promising progress of zwitterionic conducting polymers in bioelectronic implants (≥4 weeks stable implantation) is highlighted, followed by a comment on their current evolution toward selective neural coupling and reimplantable function. Finally, a critical forward look at the future of zwitterionic conducting polymers for in vivo bioelectronic devices is provided.

Water binding and hygroscopicity in π-conjugated polyelectrolytes

The presence of water strongly influences structure, dynamics and properties of ion-containing soft matter. Yet, the hydration of such matter is not well understood. Here, we show through a large study of monovalent π-conjugated polyelectrolytes that their reversible hydration, up to several water molecules per ion pair, occurs chiefly at the interface between the ion clusters and the hydrophobic matrix without disrupting ion packing. This establishes the appropriate model to be surface hydration, not the often-assumed internal hydration of the ion clusters. Through detailed analysis of desorption energies and O-H vibrational frequencies, together with OPLS4 and DFT calculations, we have elucidated key binding motifs of the sorbed water. Type-I water, which desorbs below 50 °C, corresponds to hydrogen-bonded water clusters constituting secondary hydration. Type-II water, which typically desorbs over 50-150 °C, corresponds to water bound to the anion under the influence of a proximal cation, or to a cation‒anion pair, at the cluster surface. This constitutes primary hydration. Type-III water, which irreversibly desorbs beyond 150 °C, corresponds to water kinetically trapped between ions. Its amount varies strongly with processing and heat treatment. As a consequence, hygroscopicity-which is the water sorption capacity per ion pair-depends not only on the ions, but also their cluster morphology.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

Systematic exo-endo encapsulation of hydroxyurea (HU) by Cu, Ag, and Au-doped gallium nitride nanotubes (GaNNT) for smart therapeutic delivery

Similar to the more well-known carbon nanotubes, gallium nitride nanotubes (GaNNT) are among the materials that scientists have found to be extremely helpful in transporting drugs and to provide significant potential for multi-modal medical therapies. Here, the potential of Cu, Ag, and Au-doped GaNNT for smart delivery of the anticancer medication hydroxyurea (HU) was extensively investigated employing quantum chemical analysis and density functional theory (DFT) computation at the B3LYP-GD3BJ/def2-SVP level of theory. The systematic approach used in this study entails examining the exo (outside)-and endo (inside) loading of HU utilizing the investigated nanotubes in order to understand the adsorption, sensing processes, bonding types, and thermodynamic properties. Results of the HOMO-LUMO studies show that metal-doped GaNNTs with the hydroxyurea (HU) at the endo - interaction of the drug of the nanotube produced more reduced energy gaps (0.911-2.039 eV) compared with metal-doped GaNNTs complexes at the outside - interaction of the drug on the nanotube (2.25-3.22 eV) and as such reveal their suitability for use as drug delivery materials. As observed in the endo-interaction of HU adsorptions in the tubes, HU_endo_Au@GaNNT possessed the highest adsorption energy values of -118.716 kcal/mol which shows the most chemisorption between the surfaces and the adsorbate while for HU_exo_Ag@GaNNT is -97.431 kcal/mol for the highest exo-interactions. These results suggest that HU drug interacted inside the Ag, Au, and Cu doped GaNNT will be very proficient as a carrier of the HU drug into bio systems. These results are along with visual studies of weak interactions, thermodynamics, sensor, and drug release mechanisms suggest strongly the endo-encapsulation of HU as the best mode for smart drug delivery.

Self-Doping Naphthalene Diimide Conjugated Polymers for Flexible Unipolar n-Type OTFTs

The development of high-performance organic thin-film transistor (OTFT) materials is vital for flexible electronics. Numerous OTFTs are so far reported but obtaining high-performance and reliable OTFTs simultaneously for flexible electronics is still challenging. Herein, it is reported that self-doping in conjugated polymer enables high unipolar n-type charge mobility in flexible OTFTs, as well as good operational/ambient stability and bending resistance. New naphthalene diimide (NDI)-conjugated polymers PNDI2T-NM17 and PNDI2T-NM50 with different contents of self-doping groups on their side chains are designed and synthesized. The effects of self-doping on the electronic properties of resulting flexible OTFTs are investigated. The results reveal that the flexible OTFTs based on self-doped PNDI2T-NM17 exhibit unipolar n-type charge-carrier properties and good operational/ambient stability thanks to the appropriate doping level and intermolecular interactions. The charge mobility and on/off ratio are fourfold and four orders of magnitude higher than those of undoped model polymer, respectively. Overall, the proposed self-doping strategy is useful for rationally designing OTFT materials with high semiconducting performance and reliability.

Highly Conductive Ultrathin Layers of Conjugated Polymers for Metal-Free Coplanar Transistors with Single-Polymer Transport Layers

Although metal or oxide conductive films are widely used as electrodes of electronic devices, organic electrodes would be more favorable for next-generation organic electronics. Here, using some model conjugated polymers as examples, we report a class of highly conductive and optically transparent polymer ultrathin layers. Vertical phase separation of semiconductor/insulator blends leads to a highly ordered two-dimensional (2D) ultrathin layer of conjugated-polymer chains on the insulator. Afterwards, the thermally evaporated dopants on the ultrathin layer lead to a conductivity of up to 10³ S cm^-1 and a sheet resistance 10³ Ω/square for a model conjugated polymer poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophenes) (PBTTT). The high conductivity is due to the high hole mobility (∼ 20 cm² V^-1 s^-1), although doping-induced charge density is still in the moderate range of 10²⁰ cm^-3 with a 1 nm thick dopant. Metal-free monolithic coplanar field-effect transistors using the same conjugated-polymer ultrathin layer with alternatively doped regions as electrodes and a semiconductor layer are realized. The field-effect mobility of this monolithic transistor is over 2 cm² V^-1 s^-1 for PBTTT, one order higher than that of the conventional PBTTT transistor using metal electrodes. The optical transparency of the single conjugated-polymer transport layer is over 90%, demonstrating a bright future for all-organic transparent electronics.

Bay-Functionalized Perylene Diimide Derivative Cathode Interfacial Layer for High-Performance Organic Solar Cells

The field of organic solar cells (OSCs) has acquired rapid progress with the development of nonfullerene acceptors. Interfacial engineering is also significant for the enhancement of the power conversion efficiency (PCE) in OSCs. Among the cathode interfacial materials (CIMs), perylene diimide (PDI) small molecules are promising owing to the excellent electron affinity and electron mobility. Although the well-known PDINN molecule has excellent properties, it has a high planarity formed by an extensive rigid π-conjugated backbone. Because the PDI molecular backbone has a strong tendency to aggregate, it causes the problem of excessive molecular aggregation and stacking, which directly leads to excessive crystallinity. Proper accumulation is beneficial for charge transport, but oversized crystals formed by overaggregation will hinder charge transport, ultimately affecting the film morphology and charge transport efficiency. Modifying the bay position of PDINN is an effective strategy to reduce the planarity, modulate the molecular aggregation, optimize the morphology, and enhance the charge-collecting efficiency. Therefore, PDINN-S was synthesized from PDINN by substituting the hydrogen with thiophene. The optimal PCE in the PM6:Y6 active layer was 16.18% and remained at 80% of the initial value after 720 h in a glovebox. This provides some guidance for exploring CIMs and preparing large-scale OSCs in the future.

Revealing the Electrophilic-Attack Doping Mechanism for Efficient and Universal p-Doping of Organic Semiconductors

Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to some OSCs conditionally, seriously limiting their general applications. Herein, a novel p-doping mechanism is revealed by investigating the interactions between the dopant trityl tetrakis(pentafluorophenyl) borate (TrTPFB) and poly(3-hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of tritylated thiophenium ions, which subsequently induce electron transfer from neighboring P3HT chains to realize p-doping. This unique p-doping mechanism enables TrTPFB to p-dope various OSCs including those with high ionization energy (IE ≈ 5.8 eV). Moreover, this doping mechanism endows TrTPFB with strong doping capability, leading to doping efficiency of over 80% in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p-dopants for OSCs, but also provides new opportunities toward highly efficient doping of various OSCs.

Charge-Compensated N-Doped π-Conjugated Polymers: Toward both Thermodynamic Stability of N-Doped States in Water and High Electron Conductivity

The understanding and applications of electron-conducting π-conjugated polymers with naphtalene diimide (NDI) blocks show remarkable progress in recent years. Such polymers demonstrate a facilitated n-doping due to the strong electron deficiency of the main polymer chain and the presence of the positively charged side groups stabilizing a negative charge of the n-doped backbone. Here, the n-type conducting NDI polymer with enhanced stability of its n-doped states for prospective "in-water" applications is developed. A combined experimental-theoretical approach is used to identify critical features and parameters that control the doping and electron transport process. The facilitated polymer reduction ability and the thermodynamic stability in water are confirmed by electrochemical measurements and doping studies. This material also demonstrates a high conductivity of 10^-2  S cm^-1  under ambient conditions and 10^-1  S cm^-1  in vacuum. The modeling explains the stabilizing effects  for various dopants. The simulations show a significant doping-induced "collapse" of the positively charged side chains on the core bearing a partial negative charge. This explains a decrease in the lamellar spacing observed in experiments. This study fundamentally enables a novel pathway for achieving both thermodynamic stability of the n-doped states in water and the high electron conductivity of polymers.

Establishing Self-Dopant Design Principles from Structure-Function Relationships in Self-n-Doped Perylene Diimide Organic Semiconductors

Self-doping is a particular doping method that has been applied to a wide range of organic semiconductors. However, there is a lack of understanding regarding the relationship between dopant structure and function. A structurally diverse series of self-n-doped perylene diimides (PDIs) is investigated to study the impact of steric encumbrance, counterion selection, and dopant/PDI tether distance on functional parameters such as doping, stability, morphology, and charge-carrier mobility. The studies show that self-n-doping is best enabled by the use of sterically encumbered ammoniums with short tethers and Lewis basic counterions. Additionally, water is found to inhibit doping, which concludes that thermal degradation is merely a phenomenological feature of certain dopants, and that residual solvent evaporation is the primary driver of thermally activated doping. In situ grazing-incidence wide-angle X-ray scattering studies show that sample annealing increases the π-π stacking distance and shrinks grain boundaries for improved long-range ordering. These features are then correlated to contactless carrier-mobility measurements with time-resolved microwave conductivity before and after thermal annealing. The collective relationships between structural features and functionality are finally used to establish explicit self-n-dopant design principles for the future design of materials with improved functionality.

A polymer electrolyte design enables ultralow-work-function electrode for high-performance optoelectronics

Ambient solution-processed conductive materials with a sufficient low work function are essential to facilitate electron injection in electronic and optoelectronic devices but are challenging. Here, we design an electrically conducting and ambient-stable polymer electrolyte with an ultralow work function down to 2.2 eV, which arises from heavy n-doping of dissolved salts to polymer matrix. Such materials can be solution processed into uniform and smooth films on various conductors including graphene, conductive metal oxides, conducting polymers and metals to substantially improve their electron injection, enabling high-performance blue light-emitting diodes and transparent light-emitting diodes. This work provides a universal strategy to design a wide range of stable charge injection materials with tunable work function. As an example, we also synthesize a high-work-function polymer electrolyte material for high-performance solar cells.

Ambient-stable solution-processed conductive materials with a low work function are essential to facilitate electron injection. Here, the authors design and synthesise polymer electrolyte with work function down to 2.2 eV for applications in high-performance light-emitting diodes and solar cells.

Measuring the Pores’ Structure in P3HT Organic Polymeric Semiconductor Films Using Interface Electrolyte/Organic Semiconductor Redox Injection Reactions and Bulk Space-Charge

The article is another in a series of follow-up articles on the new spectroscopic method Energy Resolved–Electrochemical Impedance Spectroscopy (ER-EIS) and presents a continuation of the effort to explain the method for electronic structure elucidation and its possibilities in the study of organic polymeric semiconductors. In addition to the detailed information on the electronic structure of the investigated organic semiconductor, the paper deals with three of the hitherto not solved aspects of the method, (1) the pores structure, which has been embedded in the evaluation framework of the ER-EIS method and shown, how the basic quantities of the pores structure, the volume density of the pores’ density coefficient β = (0.038 ± 0.002) nm⁻¹ and the Brunauer-Emmet-Teller surface areas SABET SA == 34.5 m²g⁻¹ may be found by the method, here for the archetypal poly(3-hexylthiophene-2,5-diyl) (P3HT) films. It is next shown, why the pore’s existence needs not to endanger the spectroscopic results of the ER-EIS method, and a proper way of the ER-EIS data evaluation is presented to avoid it. It is highlighted (2), how may the measurements of the pore structure contribute to the determination of the, for the method ER-EIS important, real rate constant of the overall Marcus’ D-A charge-transfer process for the poreless material and found its value k_ctD-A = (2.2 ± 0.6) × 10⁻²⁵ cm⁴ s⁻¹ for P3HT films examined. It is also independently attempted (3) to evaluate the range of k_ctD-A, based on the knowledge of the individual reaction rates in a chain of reactions, forming the whole D-A process, where the slowest one (organic semiconductor hopping transport) determines the tentative total result k_ctD-A ≅ 10⁻²⁵ cm⁴ s⁻¹. The effect of injection of high current densities by redox interface reactions in the bulk of OS with built-in pores structure may be very interesting for the design of new devices of organic electronics.

Concepts and principles of self-n-doping in perylene diimide chromophores for applications in biochemistry, energy harvesting, energy storage, and catalysis

Self-doping is an essential method of increasing carrier concentrations in organic electronics that eliminates the need to tailor host-dopant miscibility, a necessary step when employing molecular dopants. Self-n-doping can be accomplished using amines or ammonium counterions as an electron source, which are being incorporated into an ever-increasingly diverse range of organic materials spanning many applications. Self-n-doped materials have demonstrated exemplary and, in many cases, benchmark performances in a variety of applications. However, an in-depth review of the method is lacking. Perylene diimide (PDI) chromophores are an important mainstay in the semiconductor literature with well-known structure-function characteristics and are also one of the most widely utilized scaffolds for self-n-doping. In this review, we describe the unique properties of self-n-doped PDIs, delineate structure-function relationships, and discuss self-n-doped PDI performance in a range of applications. In particular, the impact of amine/ammonium incorporation into the PDI scaffold on doping efficiency is reviewed with regard to attachment mode, tether distance, counterion selection, and steric encumbrance. Self-n-doped PDIs are a unique set of PDI structural derivatives whose properties are amenable to a broad range of applications such as biochemistry, solar energy conversion, thermoelectric modules, batteries, and photocatalysis. Finally, we discuss challenges and the future outlook of self-n-doping principles.

Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

Enforcing balanced electron-hole injection into the emitter layer of quantum-dot light-emitting diodes (QLEDs) remains key to maximizing the quantum efficiency over a wide current density range. This was previously thought not possible for quantum dot (QD) emitters because of their very deep energy bands. Here, we show using Mesolight® blue-emitting CdZnSeS/ZnS QDs as a model that its valence levels are in fact considerably shallower than the corresponding band maximum of the bulk semiconductor, which makes the ideal double-type-I injection/confinement heterostructure accessible using a variety of polymer organic semiconductors as transport and injection layers. We demonstrate flat external quantum efficiency characteristics that indicate near perfect recombination within the QD layer over several decades of current density from the onset of device turn-on of about 10 μA cm^-2, for both normal and inverted QLED architectures. We also demonstrate that these organic semiconductors do not chemically degrade the QDs, unlike the usual ZnMgO nanoparticles. However, these more efficient injection heterostructures expose a new vulnerability of the QDs to in device electrochemical degradation. The work here opens a clear path towards next-generation ultra-high-performance, all-solution-processed QLEDs.

Ion-modulated radical doping of spiro-OMeTAD for more efficient and stable perovskite solar cells

Record power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) have been obtained with the organic hole transporter 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene (spiro-OMeTAD). Conventional doping of spiro-OMeTAD with hygroscopic lithium salts and volatile 4-tert-butylpyridine is a time-consuming process and also leads to poor device stability. We developed a new doping strategy for spiro-OMeTAD that avoids post-oxidation by using stable organic radicals as the dopant and ionic salts as the doping modulator (referred to as ion-modulated radical doping). We achieved PCEs of >25% and much-improved device stability under harsh conditions. The radicals provide hole polarons that instantly increase the conductivity and work function (WF), and ionic salts further modulate the WF by affecting the energetics of the hole polarons. This organic semiconductor doping strategy, which decouples conductivity and WF tunability, could inspire further optimization in other optoelectronic devices.

In situ-formed tetrahedrally coordinated double-helical metal complexes for improved coordination-activated n-doping

In situ coordination-activated n-doping by air-stable metals in electron-transport organic ligands has proven to be a viable method to achieve Ohmic electron injection for organic optoelectronics. However, the mutual exclusion of ligands with high nucleophilic quality and strong electron affinity limits the injection efficiency. Here, we propose meta-linkage diphenanthroline-type ligands, which not only possess high electron affinity and good electron transport ability but also favour the formation of tetrahedrally coordinated double-helical metal complexes to decrease the ionization energy of air-stable metals. An electron injection layer (EIL) compatible with various cathodes and electron transport materials is developed with silver as an n-dopant, and the injection efficiency outperforms conventional EILs such as lithium compounds. A deep-blue organic light-emitting diode with an optimized EIL achieves a high current efficiency calibrated by the y colour coordinate (0.045) of 237 cd A^-1 and a superb LT95 of 104.1 h at 5000 cd m^-2.

Structural and Dynamic Disorder, Not Ionic Trapping, Controls Charge Transport in Highly Doped Conducting Polymers

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counterions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique based on ion exchange, we prepare highly doped films with several counterions of varying size and shape and characterize their carrier density, electrical conductivity, and paracrystalline disorder. In this uniquely large data set composed of several classes of high-mobility conjugated polymers, each doped with at least five different ions, we find electrical conductivity to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parametrized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localization theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disorder-limited nature of charge transport and suggesting new strategies to further improve conductivities.

A novel energy level detector for molecular semiconductors

The multifunction of molecule-based devices is always achieved by improving their charge transport characteristics. These characteristics depend strongly on the energy levels of molecular semiconductors, which fundamentally govern the working principle and device performance. Therefore, an accurate measurement of these energy levels is crucial for evaluating the availability of the prepared materials and thus optimizing the device performance. Here, an easy-to-operate three-terminal hot electron transistor has been developed, which comprises a molecular optoelectronic device that records the charge transport. It achieves exceptional properties including the lowest unoccupied molecular orbit level, highest occupied molecular orbit level, higher energy states, and higher electronic bandgap. When compared with existing techniques such as cyclic voltammetry, inverse photoemission spectroscopy, and ultraviolet photoemission spectroscopy, the hot electron transistor provides in-situ characterization and categorizes the measured energy information as intrinsic properties of the molecular semiconductor. Furthermore, we provide an in-depth understanding of the fundamental device-physics, which provides promising guidance for performance optimization.

Distal Ionic Substrate-Catalyst Interactions Enable Long-Range Stereocontrol: Access to Remote Quaternary Stereocenters through a Desymmetrizing Suzuki-Miyaura Reaction

Spatial distancing of a substrate's reactive group and nonreactive catalyst-binding group from its pro-stereogenic element presents substantial hurdles in asymmetric catalysis. In this context, we report a desymmetrizing Suzuki-Miyaura reaction that establishes chirality at a remote quaternary carbon. The anionic, chiral catalyst exerts stereocontrol through electrostatic steering of substrates, even as the substrate's reactive group and charged catalyst-binding group become increasingly distanced. This study demonstrates that precise long-range stereocontrol is achievable by engaging ionic substrate-ligand interactions at a distal position.

Strong and Atmospherically Stable Dicationic Oxidative Dopant

Increasing the doping level of semiconducting polymer using strong dopants is essential for achieving good electrical conductivity. As for p-dopant, raising the electron affinity of a neutral compound through the dense introduction of electron-withdrawing group has always been the predominant strategy to achieve strong dopant. However, this simple and intuitive strategy faces extendibility, accessibility, and stability issues for further development. Herein, the use of dicationic state of tetraaryl benzidine (TAB2+ ) in conjunction with bis(trifluoromethylsulfonyl)imide anion (TFSI- ) as a strong and atmospherically stable p-dopant (TAB-2TFSI), for which the concept is hinted from a rapid and spontaneous dimerization of radical cation dopant, is demonstrated. TAB-2TFSI possesses a large redox potential such that it would have deteriorated when in contact with H2 O. However, no trace of degradation after 1 year of storage under atmospheric conditions is observed. When doping the state-of-the-art semiconducting polymer with TAB-2TFSI, a high doping level together with significantly enhanced crystallinity is achieved which led to an electrical conductivity as high as 656 S cm-1 . The concept of utilizing charged molecule as a dopant is highly versatile and will potentially accelerate the development of a strong yet stable dopant.

Light-Motivated SnO2 /TiO2 Heterojunctions Enabling the Breakthrough in Energy Density for Lithium-Ion Batteries

Powering lithium-ion batteries (LIBs) by light-irradiation will bring a paradigm shift in energy-storage technologies. Herein, a photoaccelerated rechargeable LIB employing SnO₂ /TiO₂ heterojunction nanoarrays as a multifunctional anode is developed. The electron-hole pairs generated by the Li_x TiO₂ (x ≥ 0) under light irradiation synergistically enhance the lithiation kinetics and electrochemical reversibility of both SnO₂ and TiO₂ . Specifically, the electrons can quickly pour into the SnO₂ and the generated Sn due to the more positive conduction band potentials (vs TiO₂ ), and mean while the holes also promote the intercalation of Li⁺ into TiO₂ by reaching charge balance. A remarkable increase in areal specific capacity is therefore achieved from 1.91 to 3.47 mAh cm^-2 at 5 mA cm^-2 . More impressively, there is no capacity loss even through 100 cycles, which is the best report for photorechargeable LIBs to date, owing to the strong and stable photoresponse current. This finding exhibits a feasible pathway to break the limitation in the energy density of LIBs by the efficient conversion and storage of solar energy.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Surface Polarization Doping in Diketopyrrolopyrrole-Based Conjugated Copolymers Using Cross-Linkable Terpolymer Dielectric Layers Containing Fluorinated Functional Units

It is essential to tune the electrical properties of inorganic semiconductors via a doping process in the fabrication of cutting-edge electronic devices; however, the doping in organic field-effect transistors (OFETs) is limited by the uncontrollable dopant diffusion and low doping efficiencies. This study proposes the use of a fluorinated functional group in a polymer dielectric layer as an effective p-type doping strategy for ambipolar diketopyrrolopyrrole (DPP)-based donor-acceptor (D-A)-type semiconducting copolymer films used in OFETs, without generating structural perturbations. To experimentally verify the surface polarization doping effect of the fluorinated group, two terpolymers─poly(pentafluorostyrene-co-3-azidopropyl-methacrylate-co-propargyl-methacrylate) (5F-SAPMA), wherein fluorinated units are included, and poly(phenyl-methacrylate-co-3-azidopropyl-methacrylate-co-propargyl-methacrylate) (PhAPMA), without fluorinated units─are designed and synthesized for use in OFETs. The synthesized 5F-SAPMA and PhAPMA films were cross-linked through the click reaction between the alkyne and azide units in the terpolymers at 150 °C to provide chemical, thermal, and mechanical stabilities and solvent resistance. The electrical characterization of the OFETs with the newly synthesized terpolymer dielectrics reveals that the surface polarization induced by the fluorinated groups of the 5F-SAPMA dielectrics leads to the generation of additional hole charges and helps minimize the broadening of the extended tail states in the vicinity of the valence band (highest occupied molecular orbital (HOMO) level). This not only enables a transition from the ambipolar to p-type dominant characteristics but also helps increase the hole mobility from 0.023 to 0.305 cm²/(V·s).

Transition metal-catalysed molecular n-doping of organic semiconductors

Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices^1-9. N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (η) of less than 10%^1,10. An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability^1,5,6,9,11, which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd₂(dba)₃) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased η in a much shorter doping time and high electrical conductivities (above 100 S cm^-1; ref. ¹²). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications^{12, 13}.

Nanosensor Detection of Synthetic Auxins In Planta using Corona Phase Molecular Recognition

Synthetic auxins such as 1-naphthalene acetic acid (NAA) and 2,4-dichlorophenoxyacetic acid (2,4-D) have been extensively used in plant tissue cultures and as herbicides because they are chemically more stable and potent than most endogenous auxins. A tool for rapid in planta detection of these compounds will enhance our knowledge about hormone distribution and signaling and facilitate more efficient usage of synthetic auxins in agriculture. In this work, we show the development of real-time and nondestructive in planta NAA and 2,4-D nanosensors based on the concept of corona phase molecular recognition (CoPhMoRe), to replace the current state-of-the-art sensing methods that are destructive and laborious. By designing a library of cationic polymers wrapped around single-walled carbon nanotubes with general affinity for chemical moieties displayed on auxins and its derivatives, we developed selective sensors for these synthetic auxins, with a particularly large quenching response to NAA (46%) and a turn-on response to 2,4-D (51%). The NAA and 2,4-D nanosensors are demonstrated in planta across several plant species including spinach, Arabidopsis thaliana (A. thaliana), Brassica rapa subsp. chinensis (pak choi), and Oryza sativa (rice) grown in various media, including soil, hydroponic, and plant tissue culture media. After 5 h of 2,4-D supplementation to the hydroponic medium, 2,4-D is seen to accumulate in susceptible dicotyledon pak choi leaves, while no uptake is observed in tolerant monocotyledon rice leaves. As such, the 2,4-D nanosensor had demonstrated its capability for rapid testing of herbicide susceptibility and could help elucidate the mechanisms of 2,4-D transport and the basis for herbicide resistance in crops. The success of the CoPhMoRe technique for measuring these challenging plant hormones holds tremendous potential to advance the plant biology study.

Reviving the "Schottky" Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating

The organic insulator-metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.

Bulk versus Contact Doping in Organic Semiconductors

This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages.

Overcoming the water oxidative limit for ultra-high-workfunction hole-doped polymers

It is widely thought that the water-oxidation reaction limits the maximum work function to about 5.25 eV for hole-doped semiconductors exposed to the ambient, constrained by the oxidation potential of air-saturated water. Here, we show that polymer organic semiconductors, when hole-doped, can show work functions up to 5.9 eV, and yet remain stable in the ambient. We further show that de-doping of the polymer is not determined by the oxidation of bulk water, as previously thought, due to its general absence, but by the counter-balancing anion and its ubiquitously hydrated complexes. The effective donor levels of these species, representing the edge of the 'chemical' density of states, can be depressed to about 6.0 eV below vacuum level. This can be achieved by raising the oxidation potential for hydronium generation, using large super-acid anions that are themselves also stable against oxidation. In this way, we demonstrate that poly(fluorene-alt-triarylamine) derivatives with tethered perfluoroalkyl-sulfonylimidosulfonyl anions can provide ambient solution-processability directly in the ultrahigh-workfunction hole-doped state to give films with good thermal stability. These results lay the path for design of soft materials for battery, bio-electronic and thermoelectric applications.

Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition

As electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (V_oc) and fill factor (FF) leads to a ‘plateau’ that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards. Thus, further driving of the electrode work function can continue to improve V_oc and FF, albeit slowly. The first effect arises from the coercion of Fermi level up the semiconductor density-of-states in the case of ‘soft’ Fermi pinning, raising cell built-in potential. The second effect arises from the contact-induced enhancement of majority-carrier mobility. We exemplify these using PBDTTPD:PCBM solar cells, where PBDTTPD is a prototypal face-stacked semiconductor, and where work function of the hole collection layer is systematically ‘tuned’ from onset of Fermi-level pinning, through Ohmic transition, and well into the Ohmic regime.

Both open-circuit voltage and fill factor of organic solar cells are affected by the metal-organic semiconductor interface. Here, the authors demonstrate that the voltage can continue to rise when the Fermi level is forced up to the semiconductor density-of-states tail.

Mechanism of the Alcohol-Soluble Ionic Organic Interlayer in Organic Solar Cells

In this article combining density functional theory (DFT) calculations and corresponding experimental measurements, the adsorption behaviors and working mechanism of the alcohol-soluble ionic organic interlayer on different electrode substrates were studied. The results suggest that, when the ionic organic bipyridine salt interlayer (FPyBr) is adsorbed on the Ag surface, Br^- will break away from molecule chains and form new chemical bonds with the Ag substrate, as confirmed by both the X-ray photoelectron spectroscopy (XPS) study and DFT study for the first time. Charges are further found to transfer to the Ag substrate from the new interlayer molecular structure without Br^-, resulting in adsorption dipoles directed from Ag to the interlayer. Moreover, the direction of the intrinsic dipole of the molecule itself on the Ag substrate is also verified, which is the same as that of the adsorption dipole. Subsequently, the superposition of the two dipoles results in a large reduction of the Ag substrate work function. In addition, the dipole formation mechanism of the interlayer on the ITO surface was also studied. The change in the work function of the ITO substrate by this interlayer is found to be smaller than that of Ag as confirmed by both a DFT study and scanning Kelvin probe microscopy (SKPM) results, which is mainly due to the reversed direction of the molecular intrinsic dipole with respect to the interfacial dipole. The worst device performance of organic solar cells based on the ITO-FPyBr substrate is considered to be one of the consequences of the feature. The findings here are of great importance for the study of the mechanism of the ionic organic interlayer in organic electronic devices, providing insightful understandings on how to further improve the material and device performance.

Advanced imaging and labelling methods to decipher brain cell organization and function

The brain is arguably the most complex organ. The branched and extended morphology of nerve cells, their subcellular complexity, the multiplicity of brain cell types as well as their intricate connectivity and the scattering properties of brain tissue present formidable challenges to the understanding of brain function. Neuroscientists have often been at the forefront of technological and methodological developments to overcome these hurdles to visualize, quantify and modify cell and network properties. Over the last few decades, the development of advanced imaging methods has revolutionized our approach to explore the brain. Super-resolution microscopy and tissue imaging approaches have recently exploded. These instrumentation-based innovations have occurred in parallel with the development of new molecular approaches to label protein targets, to evolve new biosensors and to target them to appropriate cell types or subcellular compartments. We review the latest developments for labelling and functionalizing proteins with small localization and functionalized reporters. We present how these molecular tools are combined with the development of a wide variety of imaging methods that break either the diffraction barrier or the tissue penetration depth limits. We put these developments in perspective to emphasize how they will enable step changes in our understanding of the brain.

Surface doping of non-fullerene photoactive layer by soluble polyoxometalate for printable organic solar cells

The non-fullerene photoactive layer (PTB7-Th:IEICO-4F) film is first immersed into a PMA solution to induce an effective surface p-type doping. An improved hole-collection and a high PCE of 11.37% was obtained, although the non-fullerene OSCs were without a commonly evaporated MoO3. This surface doping technique is an effective and feasible strategy for the printable electronics technology.

Efficient n-Doping of Polymeric Semiconductors through Controlling the Dynamics of Solution-State Polymer Aggregates

Doping of polymeric semiconductors limits the miscibility between polymers and dopants. Although significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n-doped polymeric semiconductors are usually below 10 S cm^-1 . We report a different approach to overcome the miscibility issue by modulating the solution-state aggregates of conjugated polymers. We found that the solution-state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time. Modulating the solution-state polymer aggregates can directly influence their solid-state microstructures and miscibility with dopants. As a result, both high doping efficiency and high charge-carrier mobility were simultaneously obtained. The n-doped electrical conductivity of P(PzDPP-CT2) can be tuned up to 32.1 S cm^-1 . This method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.

Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox-active molecular dopants via a simple one-shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm-2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.

Improvement of Electrical Conductivity in Conjugated Polymers through Cascade Doping with Small-Molecular Dopants

Doping capability is primitively governed by the energy level offset between the highest occupied molecular orbital (HOMO) of conjugated polymers (CPs) and the lowest unoccupied molecular orbital (LUMO) of dopants. A poor doping efficiency is obtained when doping directly using NOBF₄ forming a large energy offset with the CP, while the devised doping strategy is found to significantly improve the doping efficiency (electrical conductivity) by sequentially treating the NOBF₄ to the pre-doped CP with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquino-dimethane (F4TCNQ), establishing a relatively small energy level offset. It is verified that the cascade doping strategy requires receptive sites for each dopant to further improve the doping efficiency, and provides fast reaction kinetics energetically. An outstanding electrical conductivity (>610 S cm^-1 ) is achieved through the optimization of the devised doping strategy, and spectroscopy analysis, including Hall effect measurement, supports more efficient charge carrier generation via the devised cascade doping.

Printable Hole Transport Layer for 1.0 cm2 Organic Solar Cells

Currently, most of the hole transport layers (HTLs) of organic solar cells (OSCs) are unable to meet the requirements of printing preparation, which imposes restrictions on the commercial process of the OSCs severely. Here, we report a printable HTL, PCPDTK_0.50H_0.50-TT. The PM6:Y6:PC₇₁BM device with PCPDTK_0.50H_0.50-TT as an HTL exhibits a power conversion efficiency (PCE) of 16.3% (with an area of 0.04 cm²). More importantly, the PCE of the device is up to 10.2%, with an area of 1.0 cm² prepared by the wire-bar coating PCPDTK_0.50H_0.50-TT HTL, which is in favor of the printing fabrication of the OSCs. In view of the superiorities of the large-area printing and the impressive PCE, we believe that PCPDTK_0.50H_0.50-TT should be a potential HTL for industrial production of OSCs.