1
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Zhang Y, Li B, Han Z, Feng T, Liu Z, Wu X, Wang Q, Zhu K, Hou P, Liu W. Orientation optimization for high performance Mg 3Sb 2thermoelectric films via thermal evaporation. NANOTECHNOLOGY 2024; 35:455701. [PMID: 39137792 DOI: 10.1088/1361-6528/ad6e89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Accepted: 08/12/2024] [Indexed: 08/15/2024]
Abstract
Low-cost, highly efficient thermoelectric thin-film materials are becoming increasingly popular as miniaturization progresses. Mg3Sb2has great potential due to its low cost and high performance. However, the fabrication of Mg3Sb2thin films with high power factors (PFs) poses a certain challenge. In this work, we propose a general approach to prepare Mg3Sb2thin films with excellent thermoelectric properties. Using a two-step thermal evaporation and rapid annealing process, (001)-oriented Mg3Sb2thin films are fabricated onc-plane-oriented Al2O3substrates. The structure of the film orientation is optimized by controlling the film thickness, which modulates the thermoelectric performance. The PF of the Mg3Sb2at 500 nm (14μW·m-1·K-2) would increase to 169μW·m-1·K-2with Ag doping (Mg3Ag0.02Sb2) at room temperature. This work provides a new strategy for the development of high-performance thermoelectric thin films at room temperature.
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Affiliation(s)
- Yiming Zhang
- School of Materials Science and Engineering, Xiangtan University, Hunan, Xiangtan 411105, People's Republic of China
| | - Bo Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Zhijia Han
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Tao Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Zhenghao Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Xinzhi Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Qianjin Wang
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China
| | - Kang Zhu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Hunan, Xiangtan 411105, People's Republic of China
| | - Weishu Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
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2
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Kumar P, Webb CM, Stafford CA. Work Sum Rule for Open Quantum Systems. PHYSICAL REVIEW LETTERS 2024; 133:070404. [PMID: 39213560 DOI: 10.1103/physrevlett.133.070404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Accepted: 07/16/2024] [Indexed: 09/04/2024]
Abstract
A key question in the thermodynamics of open quantum systems is how to partition thermodynamic quantities such as entropy, work, and internal energy between the system and its environment. We show that the only partition under which entropy is nonsingular is based on a partition of Hilbert space, which assigns half the system-environment coupling to the system and half to the environment. However, quantum work partitions nontrivially under Hilbert-space partition, and we derive a work sum rule that accounts for quantum work at a distance. All state functions of the system are shown to be path independent once this nonlocal quantum work is properly accounted for. Our results are illustrated with application to a driven resonant level strongly coupled to a reservoir.
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3
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Alikin D, Pereira MJ, Abramov A, Pashnina E, Chuvakova M, Lavrik NV, Xie W, Weidenkaff A, Kholkin AL, Kovalevsky A, Tselev A. Nanoscale Imaging and Measurements of Grain Boundary Thermal Resistance in Ceramics with Scanning Thermal Wave Microscopy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42917-42930. [PMID: 39102288 PMCID: PMC11331444 DOI: 10.1021/acsami.4c08085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/24/2024] [Accepted: 07/26/2024] [Indexed: 08/06/2024]
Abstract
Material thermal conductivity is a key factor in various applications, from thermal management to energy harvesting. With microstructure engineering being a widely used method for customizing material properties, including thermal properties, understanding and controlling the role of extended phonon-scattering defects, like grain boundaries, is crucial for efficient material design. However, systematic studies are still lacking primarily due to limited tools. In this study, we demonstrate an approach for measuring grain boundary thermal resistance by probing the propagation of thermal waves across grain boundaries with a temperature-sensitive scanning probe. The method, implemented with a spatial resolution of about 100 nm on finely grained Nb-substituted SrTiO3 ceramics, achieves a detectability of about 2 × 10-8 K m2 W-1, suitable for chalcogenide-based thermoelectrics. The measurements indicated that the thermal resistance of the majority of grain boundaries in the STiO3 ceramics is below this value. While there are challenges in improving sensitivity, considering spatial resolution and the amount of material involved in the detection, the sensitivity of the scanning probe method is comparable to that of optical thermoreflectance techniques, and the method opens up an avenue to characterize thermal resistance at the level of single grain boundaries and domain walls in a spectrum of microstructured materials.
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Affiliation(s)
- Denis Alikin
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Maria J. Pereira
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Alexander Abramov
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Elena Pashnina
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Maria Chuvakova
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Nickolay V. Lavrik
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Wenjie Xie
- Materials
and Resources, Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64287, Germany
- Fraunhofer
Research Institution for Materials Recycling and Resource Strategies
IWKS, Alzenau 63755, Germany
| | - Anke Weidenkaff
- Materials
and Resources, Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64287, Germany
- Fraunhofer
Research Institution for Materials Recycling and Resource Strategies
IWKS, Alzenau 63755, Germany
| | - Andrei L. Kholkin
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Andrei Kovalevsky
- Department
of Materials and Ceramic Engineering & CICECO − Aveiro
Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Alexander Tselev
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
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4
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Lu H, Xue H, Zeng D, Liu G, Zhu L, Tian Z, Chu PK, Mei Y, Zhang M, An Z, Di Z. Field-Effect Thermoelectric Hotspot in Monolayer Graphene Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402679. [PMID: 38821488 DOI: 10.1002/adma.202402679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 05/01/2024] [Indexed: 06/02/2024]
Abstract
Graphene is a promising candidate for the thermal management of downscaled microelectronic devices owing to its exceptional electrical and thermal properties. Nevertheless, a comprehensive understanding of the intricate electrical and thermal interconversions at a nanoscale, particularly in field-effect transistors with prevalent gate operations, remains elusive. In this study, nanothermometric imaging is used to examine a current-carrying monolayer graphene channel sandwiched between hexagonal boron nitride dielectrics. It is revealed for the first time that beyond the expected Joule heating, the thermoelectric Peltier effect actively plays a significant role in generating hotspots beneath the gated region. With gate-controlled charge redistribution and a shift in the Dirac point position, an unprecedented systematic evolution of thermoelectric hotspots, underscoring their remarkable tenability is demonstrated. This study reveals the field-effect Peltier contribution in a single graphene-material channel of transistors, offering valuable insights into field-effect thermoelectrics and future on-chip energy management.
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Affiliation(s)
- Huihui Lu
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
- Westlake Institute for Optoelectronics, Hangzhou, 310024, China
| | - Daobing Zeng
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guanyu Liu
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Liping Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Ziao Tian
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Miao Zhang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Zengfeng Di
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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5
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Ye Z, Harrington B, Pickel AD. Optical super-resolution nanothermometry via stimulated emission depletion imaging of upconverting nanoparticles. SCIENCE ADVANCES 2024; 10:eado6268. [PMID: 39018395 PMCID: PMC466949 DOI: 10.1126/sciadv.ado6268] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 06/13/2024] [Indexed: 07/19/2024]
Abstract
From engineering improved device performance to unraveling the breakdown of classical heat transfer laws, far-field optical temperature mapping with nanoscale spatial resolution would benefit diverse areas. However, these attributes are traditionally in opposition because conventional far-field optical temperature mapping techniques are inherently diffraction limited. Optical super-resolution imaging techniques revolutionized biological imaging, but such approaches have yet to be applied to thermometry. Here, we demonstrate a super-resolution nanothermometry technique based on highly doped upconverting nanoparticles (UCNPs) that enable stimulated emission depletion (STED) super-resolution imaging. We identify a ratiometric thermometry signal and maintain imaging resolution better than ~120 nm for the relevant spectral bands. We also form self-assembled UCNP monolayers and multilayers and implement a detection scheme with scan times >0.25 μm2/min. We further show that STED nanothermometry reveals a temperature gradient across a joule-heated microstructure that is undetectable with diffraction limited thermometry, indicating the potential of this technique to uncover local temperature variation in wide-ranging practical applications.
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Affiliation(s)
- Ziyang Ye
- Materials Science Program, University of Rochester, Rochester, NY 14627, USA
| | - Benjamin Harrington
- Materials Science Program, University of Rochester, Rochester, NY 14627, USA
| | - Andrea D. Pickel
- Materials Science Program, University of Rochester, Rochester, NY 14627, USA
- Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627, USA
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6
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Cheng Q, Rajauria S, Schreck E, Smith R, Wang N, Reiner J, Dai Q, Bogy D. Protocol for nanoscale thermal mapping of electronic devices using atomic force microscopy with phase change material. STAR Protoc 2024; 5:103039. [PMID: 38669138 PMCID: PMC11068603 DOI: 10.1016/j.xpro.2024.103039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2024] [Revised: 03/24/2024] [Accepted: 04/11/2024] [Indexed: 04/28/2024] Open
Abstract
In this protocol, we present a facile nanoscale thermal mapping technique for electronic devices by use of atomic force microscopy and a phase change material Ge2Sb2Te5. We describe steps for Ge2Sb2Te5 thin film coating, Ge2Sb2Te5 temperature calibration, thermal mapping by varying heater power, and thermal mapping by varying heating time. The protocol can be applied for resolving surface temperatures of various operational microelectronic devices with a nanoscale precision. For complete details on the use and execution of this protocol, please refer to Cheng et al.1.
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Affiliation(s)
- Qilong Cheng
- Department of Mechanical Engineering, University of California at Berkeley, Berkeley, CA 94720, USA; Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA.
| | - Sukumar Rajauria
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA.
| | - Erhard Schreck
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA
| | - Robert Smith
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA
| | - Na Wang
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA
| | - Jim Reiner
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA
| | - Qing Dai
- Western Digital Corporation, Recording Sub System Staging and Research, San Jose, CA 95135, USA
| | - David Bogy
- Department of Mechanical Engineering, University of California at Berkeley, Berkeley, CA 94720, USA
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7
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Luan Y, Yan S, Panda K, Majumder A, Guan J, Mittapally R, Meyhofer E, Reddy P. The Metal-Insulator Transition in Vanadium Oxide Nanofilms Enables Microkelvin-Resolution Thermometry. NANO LETTERS 2024; 24:7048-7054. [PMID: 38813994 DOI: 10.1021/acs.nanolett.4c01535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
High-resolution thermometry is critical for probing nanoscale energy transport. Here, we demonstrate how high-resolution thermometry can be accomplished using vanadium oxide (VOx), which features a sizable temperature-dependence of its resistance at room temperature and an even stronger dependence at its metal-insulator-transition (MIT) temperature. We microfabricate VOx nanofilm-based electrical resistance thermometers that undergo a metal-insulator-transition at ∼337 K and systematically quantify their temperature-dependent resistance, noise characteristics, and temperature resolution. We show that VOx sensors can achieve, in a bandwidth of ∼16 mHz, a temperature resolution of ∼5 μK at room temperature (∼300 K) and a temperature resolution of ∼1 μK at the MIT (∼337 K) when the amplitude of temperature perturbations is in the microkelvin range, which, in contrast to larger perturbations, is found to avoid hysteric resistance responses. These results demonstrate that VOx-based thermometers offer a ∼10-50-fold improvement in resolution over widely used Pt-based thermometers.
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Affiliation(s)
- Yuxuan Luan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Shen Yan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Kanishka Panda
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Ayan Majumder
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Jian Guan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Rohith Mittapally
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Edgar Meyhofer
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Pramod Reddy
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
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8
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Cordova DLM, Zhou Y, Milligan GM, Cheng L, Kerr T, Ziller J, Wu R, Arguilla MQ. Sensitive Thermochromic Behavior of InSeI, a Highly Anisotropic and Tubular 1D van der Waals Crystal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312597. [PMID: 38301612 DOI: 10.1002/adma.202312597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 01/08/2024] [Indexed: 02/03/2024]
Abstract
Thermochromism, the change in color of a material with temperature, is the fundamental basis of optical thermometry. A longstanding challenge in realizing sensitive optical thermometers for widespread use is identifying materials with pronounced thermometric optical performance in the visible range. Herein, it is demonstrated that single crystals of indium selenium iodide (InSeI), a 1D van der Waals (vdW) solid consisting of weakly bound helical chains, exhibit considerable visible range thermochromism. A strong temperature-dependent optical band edge absorption shift ranging from 450 to 530 nm (2.8 to 2.3 eV) over a 380 K temperature range with an experimental (dEg/dT)max value extracted to be 1.26 × 10-3 eV K-1 is shown. This value lies appreciably above most dense conventional semiconductors in the visible range and is comparable to soft lattice solids. The authors further seek to understand the origin of this unusually sensitive thermochromic behavior and find that it arises from strong electron-phonon interactions and anharmonic phonons that significantly broaden band edges and lower the Eg with increasing temperature. The identification of structural signatures resulting in sensitive thermochromism in 1D vdW crystals opens avenues in discovering low-dimensional solids with strong temperature-dependent optical responses across broad spectral windows, dimensionalities, and size regimes.
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Affiliation(s)
| | - Yinong Zhou
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Griffin M Milligan
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Leo Cheng
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Tyler Kerr
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Joseph Ziller
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Maxx Q Arguilla
- Department of Chemistry, University of California, Irvine, CA, 92697, USA
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9
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Yao T, Ren L, Yuan B. Ultrasound-switchable fluorescence thermometry with dual detection channels using temperature-sensitive liposomes. JOURNAL OF BIOPHOTONICS 2024; 17:e202300531. [PMID: 38414356 DOI: 10.1002/jbio.202300531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 02/05/2024] [Accepted: 02/07/2024] [Indexed: 02/29/2024]
Abstract
Temperature measurements in biological tissues play a crucial role in studying metabolic activities. In this study, we introduce a noninvasive thermometry technique based on two-color ultrasound-switchable fluorescence (USF). This innovative method allows for a local temperature mapping within a microtube filled with temperature-sensitive liposomes as nano imaging agents. By measuring the temperature-dependent fluorescence emission of the liposomes using a spectrometer, we identify four characteristic temperatures. The local background temperature can be estimated by analyzing the corresponding appearance time of these four characteristic temperatures in the dynamic USF signals captured by a camera-based USF system with two detection channels. Simultaneous measurements with an infrared (IR) camera showed a 0.38°C ± 0.27°C difference between USF thermometry and IR thermography in a physiological temperature range of 36.48°C-40.14°C. This shows that the two-color USF thermometry technique is a reliable, noninvasive tool with excellent spatial and thermal resolution.
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Affiliation(s)
- Tingfeng Yao
- Ultrasound and Optical Imaging Laboratory, Department of Bioengineering, The University of Texas at Arlington, Arlington, Texas, USA
- Joint Biomedical Engineering Program, The University of Texas at Arlington and The University of Texas Southwestern Medical Center, Dallas, Texas, USA
| | - Liqin Ren
- Ultrasound and Optical Imaging Laboratory, Department of Bioengineering, The University of Texas at Arlington, Arlington, Texas, USA
- Joint Biomedical Engineering Program, The University of Texas at Arlington and The University of Texas Southwestern Medical Center, Dallas, Texas, USA
| | - Baohong Yuan
- Ultrasound and Optical Imaging Laboratory, Department of Bioengineering, The University of Texas at Arlington, Arlington, Texas, USA
- Joint Biomedical Engineering Program, The University of Texas at Arlington and The University of Texas Southwestern Medical Center, Dallas, Texas, USA
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10
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Evangeli C, Swett J, Spiece J, McCann E, Fried J, Harzheim A, Lupini AR, Briggs GAD, Gehring P, Jesse S, Kolosov OV, Mol JA, Dyck O. Thermoelectric Limitations of Graphene Nanodevices at Ultrahigh Current Densities. ACS NANO 2024; 18:11153-11164. [PMID: 38641345 PMCID: PMC11064226 DOI: 10.1021/acsnano.3c12930] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Revised: 03/29/2024] [Accepted: 04/05/2024] [Indexed: 04/21/2024]
Abstract
Graphene is atomically thin, possesses excellent thermal conductivity, and is able to withstand high current densities, making it attractive for many nanoscale applications such as field-effect transistors, interconnects, and thermal management layers. Enabling integration of graphene into such devices requires nanostructuring, which can have a drastic impact on the self-heating properties, in particular at high current densities. Here, we use a combination of scanning thermal microscopy, finite element thermal analysis, and operando scanning transmission electron microscopy techniques to observe prototype graphene devices in operation and gain a deeper understanding of the role of geometry and interfaces during high current density operation. We find that Peltier effects significantly influence the operational limit due to local electrical and thermal interfacial effects, causing asymmetric temperature distribution in the device. Thus, our results indicate that a proper understanding and design of graphene devices must include consideration of the surrounding materials, interfaces, and geometry. Leveraging these aspects provides opportunities for engineered extreme operation devices.
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Affiliation(s)
- Charalambos Evangeli
- Department
of Materials, University of Oxford, Oxford OX1 3PH, U.K.
- Physics
Department, Lancaster University, Lancaster LA1 4YW, U.K.
| | - Jacob Swett
- Department
of Materials, University of Oxford, Oxford OX1 3PH, U.K.
| | - Jean Spiece
- IMCN/NAPS,
Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Edward McCann
- Physics
Department, Lancaster University, Lancaster LA1 4YW, U.K.
| | - Jasper Fried
- Department
of Materials, University of Oxford, Oxford OX1 3PH, U.K.
| | - Achim Harzheim
- Department
of Materials, University of Oxford, Oxford OX1 3PH, U.K.
| | - Andrew R. Lupini
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | | | - Pascal Gehring
- IMCN/NAPS,
Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Stephen Jesse
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Oleg V. Kolosov
- Physics
Department, Lancaster University, Lancaster LA1 4YW, U.K.
| | - Jan A. Mol
- School
of Physics and Astronomy, Queen Mary University
of London, London E1 4NS, U.K.
| | - Ondrej Dyck
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
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11
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Nguyen HD, Yamada I, Nishimura T, Pang H, Cho H, Tang DM, Kikkawa J, Mitome M, Golberg D, Kimoto K, Mori T, Kawamoto N. STEM in situ thermal wave observations for investigating thermal diffusivity in nanoscale materials and devices. SCIENCE ADVANCES 2024; 10:eadj3825. [PMID: 38215197 PMCID: PMC10786416 DOI: 10.1126/sciadv.adj3825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Accepted: 12/15/2023] [Indexed: 01/14/2024]
Abstract
Practical techniques to identify heat routes at the nanoscale are required for the thermal control of microelectronic, thermoelectric, and photonic devices. Nanoscale thermometry using various approaches has been extensively investigated, yet a reliable method has not been finalized. We developed an original technique using thermal waves induced by a pulsed convergent electron beam in a scanning transmission electron microscopy (STEM) mode at room temperature. By quantifying the relative phase delay at each irradiated position, we demonstrate the heat transport within various samples with a spatial resolution of ~10 nm and a temperature resolution of 0.01 K. Phonon-surface scatterings were quantitatively confirmed due to the suppression of thermal diffusivity. The phonon-grain boundary scatterings and ballistic phonon transport near the pulsed convergent electron beam were also visualized.
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Affiliation(s)
- Hieu Duy Nguyen
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Isamu Yamada
- Yamada R&D Support Enterprise, 2-8-3 Minamidai, Ishioka, Ibaraki 315-0035, Japan
| | - Toshiyuki Nishimura
- Research Center for Structural Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Hong Pang
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Hyunyong Cho
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Dai-Ming Tang
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jun Kikkawa
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Masanori Mitome
- Research Network and Facility Services Division, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Dmitri Golberg
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Centre for Materials Science, Queensland University of Technology, 2 George, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Faculty of Science, Queensland University of Technology, 2 George, Brisbane, QLD 4000, Australia
| | - Koji Kimoto
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takao Mori
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1-1-1, Tsukuba 305-8671, Japan
| | - Naoyuki Kawamoto
- Center for Basic Research on Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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12
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Xu Y, Wang X, Liu S, Pan Y, Perveen A, Onwudiwe DC, Fayemi OE, Elemike EE, Bae BS, Zhu Y, Talaighil RZ, Zhang X, Chen J, Zhao Z, Li Q, Lei W, Xu X. Sensitive Thermography via Sensing Visible Photons Detected from the Manipulation of the Trap State in MAPbX 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56526-56536. [PMID: 38014498 DOI: 10.1021/acsami.3c13305] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Sensitive thermometry or thermography by responding to blackbody radiation is urgently desired in the intelligent information life, including scientific research, medical diagnosis, remote sensing, defense, etc. Even though thermography techniques based on infrared sensing have undergone unprecedented development, the poor compatibility with common optical components and the high diffraction limit impose an impediment to their integration into the established photonic integrated circuit or the realization of high-spatial-resolution and high-thermal-resolution imaging. In this work, we present a sensitive temperature-dependent visible photon detection in Bi-doped MAPbX3 (X = Cl, Br, and I) and employ it for uncooled thermography. Systematic measurements reveal that the Bi dopant introduces trap states in MAPbX3, thermal energy facilitates the carriers jumping from trap states to the conduction band, while the vacancies of trap states ensure the sequential absorption of visible photons with energy less than the band gap. Subsequently, the change of response toward the visible photon is applied to construct the thermograph, and it possesses a specific sensitivity of 2.11% K-1 along temperature variation. As a result, our thermograph presents a temperature resolution of 0.21 nA K-1, a high responsivity of 2.06 mA W-1, and a high detectivity of 2.08 × 109 Jones at room temperature. Furthermore, remote thermal imaging is successfully achieved with our thermograph.
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Affiliation(s)
- Yubing Xu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Xin Wang
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Shilin Liu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Yuzhu Pan
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Abida Perveen
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Damian Chinedu Onwudiwe
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Omolola Esther Fayemi
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Elias Emeka Elemike
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Byung Seong Bae
- Department of Electronics & Display Engineering, Hoseo University, Hoseo Ro 79, Asan city, Chungnam 31499, Republic of Korea
| | - Ying Zhu
- E-xray Electronic Co. Ltd., Suzhou 215000, China
| | - Razika Zair Talaighil
- Institute of Electrical & Electronic Engineering, M'hamed Bougara University of Boumerdes, Boumerdes 35000, Algeria
| | - Xiaobing Zhang
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Jing Chen
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Qing Li
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Wei Lei
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
| | - Xiaobao Xu
- School of Electronic Science and Engineering Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing 210000, China
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13
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Zhu Z, Tang R, Li C, An X, He L. Promises of Plasmonic Antenna-Reactor Systems in Gas-Phase CO 2 Photocatalysis. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302568. [PMID: 37338243 PMCID: PMC10460874 DOI: 10.1002/advs.202302568] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2023] [Revised: 05/26/2023] [Indexed: 06/21/2023]
Abstract
Sunlight-driven photocatalytic CO2 reduction provides intriguing opportunities for addressing the energy and environmental crises faced by humans. The rational combination of plasmonic antennas and active transition metal-based catalysts, known as "antenna-reactor" (AR) nanostructures, allows the simultaneous optimization of optical and catalytic performances of photocatalysts, and thus holds great promise for CO2 photocatalysis. Such design combines the favorable absorption, radiative, and photochemical properties of the plasmonic components with the great catalytic potentials and conductivities of the reactor components. In this review, recent developments of photocatalysts based on plasmonic AR systems for various gas-phase CO2 reduction reactions with emphasis on the electronic structure of plasmonic and catalytic metals, plasmon-driven catalytic pathways, and the role of AR complex in photocatalytic processes are summarized. Perspectives in terms of challenges and future research in this area are also highlighted.
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Affiliation(s)
- Zhijie Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM)Soochow UniversitySuzhou215123P. R. China
| | - Rui Tang
- Institute of Functional Nano & Soft Materials (FUNSOM)Soochow UniversitySuzhou215123P. R. China
| | - Chaoran Li
- Institute of Functional Nano & Soft Materials (FUNSOM)Soochow UniversitySuzhou215123P. R. China
- Jiangsu Key Laboratory for Carbon‐Based Functional Materials & DevicesSoochow UniversitySuzhouJiangsu215123P. R. China
| | - Xingda An
- Institute of Functional Nano & Soft Materials (FUNSOM)Soochow UniversitySuzhou215123P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon TechnologiesSoochow UniversitySuzhouJiangsu215123P. R. China
| | - Le He
- Institute of Functional Nano & Soft Materials (FUNSOM)Soochow UniversitySuzhou215123P. R. China
- Jiangsu Key Laboratory of Advanced Negative Carbon TechnologiesSoochow UniversitySuzhouJiangsu215123P. R. China
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14
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Farokh Payam A, Passian A. Imaging beyond the surface region: Probing hidden materials via atomic force microscopy. SCIENCE ADVANCES 2023; 9:eadg8292. [PMID: 37379392 DOI: 10.1126/sciadv.adg8292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Accepted: 05/24/2023] [Indexed: 06/30/2023]
Abstract
Probing material properties at surfaces down to the single-particle scale of atoms and molecules has been achieved, but high-resolution subsurface imaging remains a nanometrology challenge due to electromagnetic and acoustic dispersion and diffraction. The atomically sharp probe used in scanning probe microscopy (SPM) has broken these limits at surfaces. Subsurface imaging is possible under certain physical, chemical, electrical, and thermal gradients present in the material. Of all the SPM techniques, atomic force microscopy has entertained unique opportunities for nondestructive and label-free measurements. Here, we explore the physics of the subsurface imaging problem and the emerging solutions that offer exceptional potential for visualization. We discuss materials science, electronics, biology, polymer and composite sciences, and emerging quantum sensing and quantum bio-imaging applications. The perspectives and prospects of subsurface techniques are presented to stimulate further work toward enabling noninvasive high spatial and spectral resolution investigation of materials including meta- and quantum materials.
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Affiliation(s)
- Amir Farokh Payam
- Nanotechnology and Integrated Bioengineering Centre, School of Engineering, Ulster University, Belfast, UK
| | - Ali Passian
- Quantum Computing and Sensing, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
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15
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Xue H, Qian R, Lu W, Gong X, Qin L, Zhong Z, An Z, Chen L, Lu W. Direct observation of hot-electron-enhanced thermoelectric effects in silicon nanodevices. Nat Commun 2023; 14:3731. [PMID: 37349328 DOI: 10.1038/s41467-023-39489-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 06/14/2023] [Indexed: 06/24/2023] Open
Abstract
The study of thermoelectric behaviors in miniatured transistors is of fundamental importance for developing bottom-level thermal management. Recent experimental progress in nanothermetry has enabled studies of the microscopic temperature profiles of nanostructured metals, semiconductors, two-dimensional material, and molecular junctions. However, observations of thermoelectric (such as nonequilibrium Peltier and Thomson) effect in prevailing silicon (Si)-a critical step for on-chip refrigeration using Si itself-have not been addressed so far. Here, we carry out nanothermometric imaging of both electron temperature (Te) and lattice temperature (TL) of a Si nanoconstriction device and find obvious thermoelectric effect in the vicinity of the electron hotspots: When the electrical current passes through the nanoconstriction channel generating electron hotspots (with Te~1500 K being much higher than TL~320 K), prominent thermoelectric effect is directly visualized attributable to the extremely large electron temperature gradient (~1 K/nm). The quantitative measurement shows a distinctive third-power dependence of the observed thermoelectric on the electrical current, which is consistent with the theoretically predicted nonequilibrium thermoelectric effects. Our work suggests that the nonequilibrium hot carriers may be potentially utilized for enhancing the thermoelectric performance and therefore sheds new light on the nanoscale thermal management of post-Moore nanoelectronics.
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Affiliation(s)
- Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
| | - Ruijie Qian
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China
| | - Weikang Lu
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Xue Gong
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
| | - Ludi Qin
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
| | - Zhenyang Zhong
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, People's Republic of China.
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China.
- Yiwu Research Institute of Fudan University, Chengbei Road, 322000, Yiwu City, Zhejiang, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, 201210, Shanghai, China.
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China.
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China.
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16
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Swoboda T, Wainstein N, Deshmukh S, Köroğlu Ç, Gao X, Lanza M, Hilgenkamp H, Pop E, Yalon E, Muñoz Rojo M. Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy. NANOSCALE 2023; 15:7139-7146. [PMID: 37006192 PMCID: PMC10099078 DOI: 10.1039/d3nr00343d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Accepted: 03/23/2023] [Indexed: 06/19/2023]
Abstract
Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of devices shrinks to the nanoscale, we require spatially and thermally resolved thermometry to observe their fine thermal features. Scanning thermal microscopy (SThM) has proven to be a versatile measurement tool for characterizing the temperature at the surface of devices with nanoscale resolution. SThM can obtain qualitative thermal maps of a device using an operating principle based on a heat exchange process between a thermo-sensitive probe and the sample surface. However, the quantification of these thermal features is one of the most challenging parts of this technique. Developing reliable calibration approaches for SThM is therefore an essential aspect to accurately determine the temperature at the surface of a sample or device. In this work, we calibrate a thermo-resistive SThM probe using heater-thermometer metal lines with different widths (50 nm to 750 nm), which mimic variable probe-sample thermal exchange processes. The sensitivity of the SThM probe when scanning the metal lines is also evaluated under different probe and line temperatures. Our results reveal that the calibration factor depends on the probe measuring conditions and on the size of the surface heating features. This approach is validated by mapping the temperature profile of a phase change electronic device. Our analysis provides new insights on how to convert the thermo-resistive SThM probe signal to the scanned device temperature more accurately.
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Affiliation(s)
- Timm Swoboda
- Department of Thermal and Fluid Engineering, Faculty of Engineering Technology, University of Twente, Enschede, The Netherlands.
| | - Nicolás Wainstein
- Faculty of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, Israel
| | - Sanchit Deshmukh
- Department of Electrical Engineering, Stanford University, Stanford, USA
| | - Çağıl Köroğlu
- Department of Electrical Engineering, Stanford University, Stanford, USA
| | - Xing Gao
- Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
| | - Mario Lanza
- Materials Science and Engineering Program Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
| | - Hans Hilgenkamp
- Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, USA
| | - Eilam Yalon
- Faculty of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, Israel
| | - Miguel Muñoz Rojo
- Department of Thermal and Fluid Engineering, Faculty of Engineering Technology, University of Twente, Enschede, The Netherlands.
- Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC), Madrid, Spain
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17
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Pico-Watt Scanning Thermal Microscopy for Thermal Energy Transport Investigation in Atomic Materials. NANOMATERIALS 2022; 12:nano12091479. [PMID: 35564188 PMCID: PMC9100069 DOI: 10.3390/nano12091479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 04/25/2022] [Accepted: 04/26/2022] [Indexed: 02/05/2023]
Abstract
The thermophysical properties at the nanoscale are key characteristics that determine the operation of nanoscale devices. Additionally, it is important to measure and verify the thermal transfer characteristics with a few nanometer or atomic-scale resolutions, as the nanomaterial research field has expanded with respect to the development of molecular and atomic-scale devices. Scanning thermal microscopy (SThM) is a well-known method for measuring the thermal transfer phenomena with the highest spatial resolution. However, considering the rapid development of atomic materials, the development of an ultra-sensitive SThM for measuring pico-watt (pW) level heat transfer is essential. In this study, to measure molecular- and atomic-scale phenomena, a pico-watt scanning thermal microscopy (pW-SThM) equipped with a calorimeter capable of measuring heat at the pW level was developed. The heat resolution of the pW-SThM was verified through an evaluation experiment, and it was confirmed that the temperature of the metal line heater sample could be quantitatively measured by using the pW-SThM. Finally, we demonstrated that pW-SThM detects ultra-small differences of local heat transfer that may arise due to differences in van der Waals interactions between the graphene sheets in highly ordered pyrolytic graphite. The pW-SThM probe is expected to significantly contribute to the discovery of new heat and energy transfer phenomena in nanodevices and two-dimensional materials that have been inaccessible through experiments.
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18
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Fang S, Hu YH. Thermo-photo catalysis: a whole greater than the sum of its parts. Chem Soc Rev 2022; 51:3609-3647. [PMID: 35419581 DOI: 10.1039/d1cs00782c] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Thermo-photo catalysis, which is the catalysis with the participation of both thermal and photo energies, not only reduces the large energy consumption of thermal catalysis but also addresses the low efficiency of photocatalysis. As a whole greater than the sum of its parts, thermo-photo catalysis has been proven as an effective and promising technology to drive chemical reactions. In this review, we first clarify the definition (beyond photo-thermal catalysis and plasmonic catalysis), classification, and principles of thermo-photo catalysis and then reveal its superiority over individual thermal catalysis and photocatalysis. After elucidating the design principles and strategies toward highly efficient thermo-photo catalytic systems, an ample discussion on the synergetic effects of thermal and photo energies is provided from two perspectives, namely, the promotion of photocatalysis by thermal energy and the promotion of thermal catalysis by photo energy. Subsequently, state-of-the-art techniques applied to explore thermo-photo catalytic mechanisms are reviewed, followed by a summary on the broad applications of thermo-photo catalysis and its energy management toward industrialization. In the end, current challenges and potential research directions related to thermo-photo catalysis are outlined.
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Affiliation(s)
- Siyuan Fang
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, USA.
| | - Yun Hang Hu
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931-1295, USA.
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19
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Gyhm JY, Šafránek D, Rosa D. Quantum Charging Advantage Cannot Be Extensive without Global Operations. PHYSICAL REVIEW LETTERS 2022; 128:140501. [PMID: 35476489 DOI: 10.1103/physrevlett.128.140501] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Accepted: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum batteries are devices made from quantum states, which store and release energy in a fast and efficient manner, thus offering numerous possibilities in future technological applications. They offer a significant charging speedup when compared to classical batteries, due to the possibility of using entangling charging operations. We show that the maximal speedup that can be achieved is extensive in the number of cells, thus offering at most quadratic scaling in the charging power over the classically achievable linear scaling. To reach such a scaling, a global charging protocol, charging all the cells collectively, needs to be employed. This concludes the quest on the limits of charging power of quantum batteries and adds to other results in which quantum methods are known to provide at most quadratic scaling over their classical counterparts.
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Affiliation(s)
- Ju-Yeon Gyhm
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, 1 Gwanak-ro, Seoul 08826, Korea
| | - Dominik Šafránek
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea
| | - Dario Rosa
- Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea
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20
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Deshmukh S, Rojo MM, Yalon E, Vaziri S, Koroglu C, Islam R, Iglesias RA, Saraswat K, Pop E. Direct measurement of nanoscale filamentary hot spots in resistive memory devices. SCIENCE ADVANCES 2022; 8:eabk1514. [PMID: 35353574 PMCID: PMC8967235 DOI: 10.1126/sciadv.abk1514] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Accepted: 02/04/2022] [Indexed: 05/19/2023]
Abstract
Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous current densities and whose behavior lies at the heart of this technology. Here, we directly measure the temperature of these filaments in realistic RRAM with nanoscale resolution using scanning thermal microscopy. We use both conventional metal and ultrathin graphene electrodes, which enable the most thermally intimate measurement to date. Filaments can reach 1300°C during steady-state operation, but electrode temperatures seldom exceed 350°C because of thermal interface resistance. These results reveal the importance of thermal engineering for nanoscale RRAM toward ultradense data storage or neuromorphic operation.
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Affiliation(s)
- Sanchit Deshmukh
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Miguel Muñoz Rojo
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC), Madrid, Spain
| | - Eilam Yalon
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel
| | - Sam Vaziri
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Cagil Koroglu
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Raisul Islam
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Ricardo A. Iglesias
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Krishna Saraswat
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
- Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305, USA
- Precourt Institute for Energy, Stanford University, Stanford, CA 94305, USA
- Corresponding author.
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21
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Trefon-Radziejewska D, Juszczyk J, Krzywiecki M, Hamaoui G, Horny N, Antoniow JS, Chirtoc M. Thermal characterization of morphologically diverse copper phthalocyanine thin layers by scanning thermal microscopy. Ultramicroscopy 2022; 233:113435. [PMID: 34864284 DOI: 10.1016/j.ultramic.2021.113435] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Revised: 09/28/2021] [Accepted: 11/25/2021] [Indexed: 11/19/2022]
Abstract
Morphologically diverse copper phthalocyanine (CuPc) thin layers were thermally characterized by scanning thermal microscopy (SThM). The organic layers with thicknesses below 1 µm were deposited by physical vapor deposition in a high vacuum on the N-BK 7 glass substrates. Four set of samples were fabricated and studied. Atomic Force Microscopy imaging revealed strong differences in the surface roughness, mean grain size/height, as well as distances between grains for the CuPc layers. For quantitative thermal investigations, three active SThM operating modes were applied using either a Wollaston thermal probe (ThP) or KNT ThP as thermal probe heated with a DC, an AC (3ω-SThM) current or their combination (DC/AC SThM). Meanwhile, qualitative analysis was performed by thermal surface imaging. The results of this study revealed a correlation between the morphology and the local thermophysical properties of the examined CuPc thin layers. It was found that the heat transport properties in such layers will deteriorate with the increase of the surface roughness and porosity. Those results can be a valuable contribution to the further development of phthalocyanine-based devices.
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Affiliation(s)
- Dominika Trefon-Radziejewska
- Institute of Physics Center for Science and Education, Silesian University of Technology, Konarskiego 22B, Gliwice 44-100, Poland.
| | - Justyna Juszczyk
- Institute of Physics Center for Science and Education, Silesian University of Technology, Konarskiego 22B, Gliwice 44-100, Poland
| | - Maciej Krzywiecki
- Institute of Physics Center for Science and Education, Silesian University of Technology, Konarskiego 22B, Gliwice 44-100, Poland
| | - Georges Hamaoui
- ESYCOM UMR 9007, Université Gustave Eiffel, CNRS, CNAM, Marne-la-Vallée F-77454, France
| | - Nicolas Horny
- ITheMM, Université de Reims Champagne-Ardenne URCA, Reims 51687 France
| | | | - Mihai Chirtoc
- ITheMM, Université de Reims Champagne-Ardenne URCA, Reims 51687 France
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22
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Wen P, Tiwari P, Mauthe S, Schmid H, Sousa M, Scherrer M, Baumann M, Bitachon BI, Leuthold J, Gotsmann B, Moselund KE. Waveguide coupled III-V photodiodes monolithically integrated on Si. Nat Commun 2022; 13:909. [PMID: 35177604 PMCID: PMC8854727 DOI: 10.1038/s41467-022-28502-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Accepted: 01/14/2022] [Indexed: 11/10/2022] Open
Abstract
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
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Affiliation(s)
- Pengyan Wen
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Preksha Tiwari
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Svenja Mauthe
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Markus Scherrer
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Michael Baumann
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bertold Ian Bitachon
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Juerg Leuthold
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bernd Gotsmann
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Kirsten E Moselund
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland.
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23
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Reihani A, Luan Y, Yan S, Lim JW, Meyhofer E, Reddy P. Quantitative Mapping of Unmodulated Temperature Fields with Nanometer Resolution. ACS NANO 2022; 16:939-950. [PMID: 34958551 DOI: 10.1021/acsnano.1c08513] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantitative mapping of temperature fields with nanometric resolution is critical in various areas of scientific research and emerging technology, such as nanoelectronics, surface chemistry, plasmonic devices, and quantum systems. A key challenge in achieving quantitative thermal imaging with scanning thermal microscopy (SThM) is the lack of knowledge of the tip-sample thermal resistance (RTS), which varies with local topography and is critical for quantifying the sample temperature. Recent advances in SThM have enabled simultaneous quantification of RTS and topography in situations where the temperature field is modulated enabling quantitative thermometry even when topographical features cause significant variations in RTS. However, such an approach is not applicable to situations where the temperature modulation of the device is not readily possible. Here we show, using custom-fabricated scanning thermal probes (STPs) with a sharp tip (radius ∼25 nm) and an integrated heater/thermometer, that one can quantitatively map unmodulated temperature fields, in a single scan, with ∼7 nm spatial resolution and ∼50 mK temperature resolution in a bandwidth of 1 Hz. This is accomplished by introducing a modulated heat input to the STP and measuring the AC and DC responses of the probe's temperature which allow for simultaneous mapping of the tip-sample thermal resistance and sample surface temperature. The approach presented here─contact resistance resolved scanning thermal microscopy (CR-SThM)─can greatly facilitate temperature mapping of a variety of microdevices under practical operating conditions.
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Affiliation(s)
- Amin Reihani
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Yuxuan Luan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Shen Yan
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Ju Won Lim
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Edgar Meyhofer
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Pramod Reddy
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
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24
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Du J, Liu J, Chen Y, Zhao Y, Li Y, Miao Y. Lanthanide-doped bismuth-based nanophosphors for ratiometric upconversion optical thermometry. RSC Adv 2022; 12:8743-8749. [PMID: 35424804 PMCID: PMC8985227 DOI: 10.1039/d2ra01181f] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 03/14/2022] [Indexed: 12/28/2022] Open
Abstract
Nanothermometry could realize stable, efficient, and noninvasive temperature detection at the nanoscale. Unfortunately, most applications of nanothermometers are still limited due to their intricate synthetic process and low-temperature sensitivity. Herein, we reported a kind of novel bismuth-based upconversion nanomaterial with a fast and facile preparation strategy. The bismuth-based upconversion luminophore was synthesized by the co-precipitation method within 1 minute. By optimizing the doping ratio of the sensitizer Yb ion and the activator Er ion and adjusting the synthetic solvent strategy, the crystallinity of the nanomaterials was increased and the upconversion luminescence intensity was improved. Ratiometric upconversion optical measurements of temperature in the range of 278 K to 358 K can be achieved by ratiometric characteristic emission peaks of thermally sensitive Er ion. This method of rapidly constructing nanometer temperature probes provides a feasible strategy for the construction of novel fluorescent temperature probes. Lanthanide-doped bismuth-based nanospheres can be rapidly synthesized within 1 minute for upconversion luminescence ratiometric temperature detection.![]()
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Affiliation(s)
- Jun Du
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Jinliang Liu
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Ying Chen
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yuefeng Zhao
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yuhao Li
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
- Shanghai Collaborative Innovation Center of Energy Therapy for Tumors, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yuqing Miao
- School of Materials and Chemistry, Institute of Bismuth and Rhenium Science, University of Shanghai for Science and Technology, Shanghai 200093, China
- Shanghai Collaborative Innovation Center of Energy Therapy for Tumors, University of Shanghai for Science and Technology, Shanghai 200093, China
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25
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Li L, Zhang C, Xu L, Ye C, Chen S, Wang X, Song Y. Luminescence Ratiometric Nanothermometry Regulated by Tailoring Annihilators of Triplet–Triplet Annihilation Upconversion Nanomicelles. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202110830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Lin Li
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Chun Zhang
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Lei Xu
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Changqing Ye
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Shuoran Chen
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Xiaomei Wang
- School of Materials Science and Engineering Suzhou University of Science and Technology Suzhou 215009 P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
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26
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Li L, Zhang C, Xu L, Ye C, Chen S, Wang X, Song Y. Luminescence Ratiometric Nanothermometry Regulated by Tailoring Annihilators of Triplet-Triplet Annihilation Upconversion Nanomicelles. Angew Chem Int Ed Engl 2021; 60:26725-26733. [PMID: 34623016 DOI: 10.1002/anie.202110830] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2021] [Indexed: 11/07/2022]
Abstract
Triplet-triplet annihilation (TTA) upconversion is a special non-linear photophysical process that converts low-energy photons into high-energy photons based on sensitizer/annihilator pairs. Here, we constructed a novel luminescence ratiometric nanothermometer based on TTA upconversion nanomicelles by encapsulating sensitizer/annihilator molecules into a temperature-sensitive amphiphilic triblock polymer and obtained good linear relationships between the luminescence ratio (integrated intensity ratio of upconverted luminescence peak to the downshifted phosphorescence peak) and the temperature. We also found chemical modification of annihilators would rule out the interference of the polymer concentration and stereochemical engineering of annihilators would readily regulate the thermal sensitivity.
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Affiliation(s)
- Lin Li
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Chun Zhang
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Lei Xu
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Changqing Ye
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Shuoran Chen
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Xiaomei Wang
- School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Yanlin Song
- Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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27
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Labardi M, Capaccioli S. Tuning-fork-based piezoresponse force microscopy. NANOTECHNOLOGY 2021; 32:445701. [PMID: 34284362 DOI: 10.1088/1361-6528/ac1634] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Accepted: 07/20/2021] [Indexed: 06/13/2023]
Abstract
Surface displacements of a few picometers, occurring after application of an electric potential to piezoelectric materials, can be detected and mapped with nanometer-scale lateral resolution by scanning probe methods, the most notable being piezoresponse force microscopy (PFM). Yet, absolute determination of such displacements, giving access for instance to materials' piezoelectric coefficients, are hindered by both mechanical and electrostatic side-effects, requiring complex experimental and/or post-processing procedures for carrying out reliable results. The employment of quartz tuning-fork force sensors in an intermittent contact mode PFM is able to provide measurements of electrically-induced surface displacements that are not influenced by electrostatic side-effects typical of more conventional cantilever-based PFM. The method is shown to yield piezoeffect mapping on standard ferroelectric test crystals (periodically-poled lithium niobate and triglycine sulfate), as well as on a ferroelectric polymer (PVDF), with no visible influence from the applied dc electric potential.
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Affiliation(s)
- M Labardi
- CNR-IPCF, Sede Secondaria di Pisa, c/o Physics Department, University of Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy
| | - S Capaccioli
- CNR-IPCF, Sede Secondaria di Pisa, c/o Physics Department, University of Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy
- Physics Department, University of Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy
- CISUP, Centro per l'Integrazione della Strumentazione dell'Università di Pisa, Lungarno Pacinotti 43, I-56126 Pisa, Italy
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28
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Quasiadiabatic electron transport in room temperature nanoelectronic devices induced by hot-phonon bottleneck. Nat Commun 2021; 12:4752. [PMID: 34362908 PMCID: PMC8346506 DOI: 10.1038/s41467-021-25094-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Accepted: 07/18/2021] [Indexed: 12/02/2022] Open
Abstract
Since the invention of transistors, the flow of electrons has become controllable in solid-state electronics. The flow of energy, however, remains elusive, and energy is readily dissipated to lattice via electron-phonon interactions. Hence, minimizing the energy dissipation has long been sought by eliminating phonon-emission process. Here, we report a different scenario for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss. Direct nanothermometric mapping of electrons and lattice in current-carrying GaAs/AlGaAs devices exhibit remarkable discrepancies, indicating unexpected thermal isolation between the two subsystems. This surprising effect arises from the overpopulated hot longitudinal-optical (LO) phonons generated through frequent emission by hot electrons, which induce equally frequent LO-phonon reabsorption (“hot-phonon bottleneck”) cancelling the net energy loss. Our work sheds light on energy manipulation in nanoelectronics and power-electronics and provides important hints to energy-harvesting in optoelectronics (such as hot-carrier solar-cells). Minimizing the energy dissipation is usually sought by eliminating phonon-emission process. Here, the authors find a different approach for facilitating energy transmission at room temperature that electrons exert diffusive but quasiadiabatic transport, free from substantial energy loss.
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29
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Stefanou G, Menges F, Boehm B, Moran KA, Adams J, Ali M, Rosamond MC, Gotsmann B, Allenspach R, Burnell G, Hickey BJ. Scanning Thermal Microscopy and Ballistic Phonon Transport in Lateral Spin Valves. PHYSICAL REVIEW LETTERS 2021; 127:035901. [PMID: 34328759 DOI: 10.1103/physrevlett.127.035901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 04/13/2021] [Accepted: 06/17/2021] [Indexed: 06/13/2023]
Abstract
Using scanning thermal microscopy, we have mapped the spatial distribution of temperatures in an operating nanoscale device formed from a magnetic injector, an Ag connecting wire, and a magnetic detector. An analytical model explained the thermal diffusion over the measured temperature range (2-300 K) and injector-detector separation (400-3000 nm). The characteristic diffusion lengths of the Peltier and Joule heat differ remarkably below 60 K, a fact that can be explained by the onset of ballistic phonon heat transfer in the substrate.
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Affiliation(s)
- G Stefanou
- School of Physics and Astronomy, University of Leeds, LS2 9JT Leeds, United Kingdom
| | - F Menges
- IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - B Boehm
- IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - K A Moran
- School of Physics and Astronomy, University of Leeds, LS2 9JT Leeds, United Kingdom
| | - J Adams
- School of Physics and Astronomy, University of Leeds, LS2 9JT Leeds, United Kingdom
| | - M Ali
- School of Physics and Astronomy, University of Leeds, LS2 9JT Leeds, United Kingdom
| | - M C Rosamond
- School of Electronics and Electrical Engineering, University of Leeds, LS2 9JT Leeds, United Kingdom
| | - B Gotsmann
- IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - R Allenspach
- IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - G Burnell
- IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - B J Hickey
- School of Physics and Astronomy, University of Leeds, LS2 9JT Leeds, United Kingdom
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30
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Nag S, Ananthakrishna G, Maiti PK, Subramanian Y. High purity separation of n-pentane from neopentane using a nano-crystal of zeolite Y. J Chem Phys 2021; 155:014702. [PMID: 34241398 DOI: 10.1063/5.0053081] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022] Open
Abstract
A method for the separation of a mixture of n-pentane and neopentane using a nano-crystallite of zeolite Y is reported. This method judiciously combines two well-known, counter-intuitive phenomena, the levitation and the blowtorch effects. The result is that the two components are separated by being driven to the opposite ends of the zeolite column. The calculations are based on the non-equilibrium Monte Carlo method with moves from a region at one temperature to a region at another temperature. The necessary acceptance probability for such moves has been derived here on the basis of stationary solution of an inhomogeneous Fokker-Planck equation. Simulations have been carried out with a realistic and experimentally relevant Gaussian hot zone and also a square hot zone, both of which lead to very good separation. Simulations without the hot zones do not show any separation. The results are reported at a loading of 1 molecule per cage. The temperature of the hot zone is just ∼30 K higher than the ambient temperature. The separation factors of the order of 1017 are achieved using single crystals of zeolite, which are less than 1 μm long. The conditions for including the hot zone may be experimentally realizable in the future considering the rapid advances in nanoscale thermometry. The separation process is likely to be energetically more efficient by several orders of magnitude as compared to the existing methods of separation, making the method very green.
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Affiliation(s)
- Shubhadeep Nag
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India
| | - G Ananthakrishna
- Materials Research Center, Indian Institute of Science, Bangalore 560 012, India
| | - Prabal K Maiti
- Department of Physics, Indian Institute of Science, Bangalore 560 012, India
| | - Yashonath Subramanian
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India
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31
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Gottlieb S, Pigard L, Ryu YK, Lorenzoni M, Evangelio L, Fernández-Regúlez M, Rawlings CD, Spieser M, Perez-Murano F, Müller M, Knoll AW. Thermal Imaging of Block Copolymers with Sub-10 nm Resolution. ACS NANO 2021; 15:9005-9016. [PMID: 33938722 DOI: 10.1021/acsnano.1c01820] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Thermal silicon probes have demonstrated their potential to investigate the thermal properties of various materials at high resolution. However, a thorough assessment of the achievable resolution is missing. Here, we present a probe-based thermal-imaging technique capable of providing sub-10 nm lateral resolution at a sub-10 ms pixel rate. We demonstrate the resolution by resolving microphase-separated PS-b-PMMA block copolymers that self-assemble in 11 to 19 nm half-period lamellar structures. We resolve an asymmetry in the heat flux signal at submolecular dimensions and assess the ratio of heat flux into both polymers in various geometries. These observations are quantitatively compared with coarse-grained molecular simulations of energy transport that reveal an enhancement of transport along the macromolecular backbone and a Kapitza resistance at the internal interfaces of the self-assembled structure. This comparison discloses a tip-sample contact radius of a ≈ 4 nm and identifies combinations of enhanced intramolecular transport and Kapitza resistance.
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Affiliation(s)
- Steven Gottlieb
- Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Carrer dels Tillers s/n, 08193 Bellaterra, Barcelona, Spain
| | - Louis Pigard
- Institute for Theoretical Physics, Georg-August-University, 37077 Göttingen, Germany
| | - Yu Kyoung Ryu
- IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Matteo Lorenzoni
- Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Carrer dels Tillers s/n, 08193 Bellaterra, Barcelona, Spain
| | - Laura Evangelio
- Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Carrer dels Tillers s/n, 08193 Bellaterra, Barcelona, Spain
| | - Marta Fernández-Regúlez
- Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Carrer dels Tillers s/n, 08193 Bellaterra, Barcelona, Spain
| | - Colin D Rawlings
- IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Martin Spieser
- SwissLitho AG, Technoparkstrasse 1, 8805 Zürich, Switzerland
| | - Francesc Perez-Murano
- Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Carrer dels Tillers s/n, 08193 Bellaterra, Barcelona, Spain
| | - Marcus Müller
- Institute for Theoretical Physics, Georg-August-University, 37077 Göttingen, Germany
| | - Armin W Knoll
- IBM Research - Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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32
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Zakiyyan N, Darr CM, Chen B, Mathai C, Gangopadhyay K, McFarland J, Gangopadhyay S, Maschmann MR. Surface Plasmon Enhanced Fluorescence Temperature Mapping of Aluminum Nanoparticle Heated by Laser. SENSORS 2021; 21:s21051585. [PMID: 33668303 PMCID: PMC7956715 DOI: 10.3390/s21051585] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2021] [Revised: 02/18/2021] [Accepted: 02/21/2021] [Indexed: 11/16/2022]
Abstract
Partially aggregated Rhodamine 6G (R6G) dye is used as a lights-on temperature sensor to analyze the spatiotemporal heating of aluminum nanoparticles (Al NPs) embedded within a tetrafluoroethylene, hexafluoropropylene, and vinylidene fluoride (THV) fluoropolymer matrix. The embedded Al NPs were photothermally heated using an IR laser, and the fluorescent intensity of the embedded dye was monitored in real time using an optical microscope. A plasmonic grating substrate enhanced the florescence intensity of the dye while increasing the optical resolution and heating rate of Al NPs. The fluorescence intensity was converted to temperature maps via controlled calibration. The experimental temperature profiles were used to determine the Al NP heat generation rate. Partially aggregated R6G dyes, combined with the optical benefits of a plasmonic grating, offered robust temperature sensing with sub-micron spatial resolution and temperature resolution on the order of 0.2 °C.
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Affiliation(s)
- Naadaa Zakiyyan
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Charles M. Darr
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Biyan Chen
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Cherian Mathai
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Keshab Gangopadhyay
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Jacob McFarland
- J. Mike Walker Department of Mechanical Engineering, Texas A&M University, College Station, TX 77843, USA;
| | - Shubhra Gangopadhyay
- Department of Electrical Engineering and Computer Science, University of Missouri, Columbia, MO 65211, USA; (N.Z.); (C.M.D.); (B.C.); (C.M.); (K.G.); (S.G.)
| | - Matthew R. Maschmann
- Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, MO 65211, USA
- Correspondence:
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33
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Zhang Y, Zhu W, Borca-Tasciuc T. Thermal conductivity measurements of thin films by non-contact scanning thermal microscopy under ambient conditions. NANOSCALE ADVANCES 2021; 3:692-702. [PMID: 36133831 PMCID: PMC9417296 DOI: 10.1039/d0na00657b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Accepted: 12/14/2020] [Indexed: 05/28/2023]
Abstract
Thermal conductivity measurements using Scanning Thermal Microscopy (SThM) usually involve heat transfer across the mechanical contact and liquid meniscus between the thermal probe and the sample. However, variations in contact conditions due to capillary effects at probe-sample contact and probe and sample wear due to mechanical contact interfere with accurate determination of the thermal conductivity. This paper presents measurements of thin film thermal conductivity using a SThM method employing a Wollaston probe in non-contact mode in synergy with detailed heat transfer analysis. In this technique, the thermal probe is scanned above the sample at a distance comparable with the mean free path of the ambient gas molecules. A Three-Dimensional Finite Element Model (3DFEM) that includes the specifics of the heat transfer between the sample and the probe in transition heat conduction regime was developed to predict the SThM probe thermal resistance and fit the thermal conductivity of the measured thin films. Proof-of-concept experimental in-plane thermal conductivity results for 240 nm and 46.6 nm Au films deposited on glass and silicon substrates were validated by experimental measurements of their electrical conductivity coupled with the Wiedemann-Franz law, with a discrepancy < 6.4%. Moreover, predictions based on a kinetic theory model for thin-film thermal conductivity agreed with the experimental results for the Au films with <6.6% discrepancy. To reduce the time and complexity of data analysis and facilitate experimental planning, an analytical model was also developed for the thermal transport between the Wollaston probe, ambient, and film-on-substrate samples. The accuracy of thin film thermal conductivity measurements using the analytical model was investigated using 3DFEM simulations. Fitted functions were developed for fast data analysis of thermal conductivity of thin films in the range of ∼100-600 W m-1 K-1 and thickness between ∼50-300 nm deposited on the two types of substrates investigated in this work, which yielded results with a discrepancy of 6-16.7% when compared to the Au films' thermal conductivity values.
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Affiliation(s)
- Yun Zhang
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute Troy NY 12180 USA
| | - Wenkai Zhu
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute Troy NY 12180 USA
| | - Theodorian Borca-Tasciuc
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute Troy NY 12180 USA
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34
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Wu X, Zhan S, Han J, Liu Y. Nanoscale Ultrasensitive Temperature Sensing Based on Upconversion Nanoparticles with Lattice Self-Adaptation. NANO LETTERS 2021; 21:272-278. [PMID: 33372803 DOI: 10.1021/acs.nanolett.0c03637] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Upconversion nanoparticles have recently received increasing attention due to their outstanding performance in temperature sensing at the nanoscale. Although much effort has been devoted to improve their thermal sensitivity, there is no efficient way for achieving significant enhancement. Here, we show that lattice self-adaptation can unlock a new route for remarkably enhancing the thermal sensitivity of upconversion nanoparticles. The thermally sensitive fluorescence intensity ratio (FIR) of the dopant Er3+ is used for indicating the temperature variation, while a heterojunction of NaGdF4/NaYF4 is prepared as host material to produce a lattice distortion at the interface which is also sensitive to temperature. With the increase of temperature, the FIR of the transitions 2H11/2/4S3/2 → 4I15/2 increases, accompanied by the self-adapted decrease of interface lattice distortion that leads to the additional increase in FIR. Using core/shell upconversion nanoparticles with lattice self-adaptation, we achieve an enhanced thermal sensitivity three times higher than core-only nanoparticles.
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Affiliation(s)
- Xiaofeng Wu
- School of Computer and Information Engineering, Hunan University of Technology and Business, Changsha 410205, China
| | - Shiping Zhan
- Department of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan 411201, China
| | - Junbo Han
- Wuhan National High Magnetic Field Center, Wuhan 430074, China
| | - Yunxin Liu
- School of Computer and Information Engineering, Hunan University of Technology and Business, Changsha 410205, China
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35
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El Sachat A, Alzina F, Sotomayor Torres CM, Chavez-Angel E. Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:175. [PMID: 33450930 PMCID: PMC7828386 DOI: 10.3390/nano11010175] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 01/04/2021] [Accepted: 01/08/2021] [Indexed: 02/07/2023]
Abstract
Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. We summarize the latest device-relevant methodologies of phonon engineering in semiconductor nanostructures and 2D materials, including graphene and transition metal dichalcogenides. Then, we review recent advances in thermal characterization techniques, and discuss their main challenges and limitations.
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Affiliation(s)
- Alexandros El Sachat
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
| | - Francesc Alzina
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
| | - Clivia M. Sotomayor Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
- ICREA, Passeig Lluis Companys 23, 08010 Barcelona, Spain
| | - Emigdio Chavez-Angel
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain; (F.A.); (C.M.S.T.); (E.C.-A.)
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36
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Bonança MVS, Nazé P, Deffner S. Negative entropy production rates in Drude-Sommerfeld metals. Phys Rev E 2021; 103:012109. [PMID: 33601516 DOI: 10.1103/physreve.103.012109] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Accepted: 12/17/2020] [Indexed: 11/07/2022]
Abstract
It is commonly accepted that in typical situations the rate of entropy production is non-negative. We show that this assertion is not entirely correct, not even in the linear regime, if a time-dependent, external perturbation is not compensated by a rapid enough decay of the response function. This is demonstrated for three variants of the Drude model to describe electrical conduction in noble metals, namely the classical free electron gas, the Drude-Sommerfeld model, and the extended Drude-Sommerfeld model. The analysis is concluded with a discussion of potential experimental verifications and ramifications of negative entropy production rates.
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Affiliation(s)
- Marcus V S Bonança
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo, Brazil
| | - Pierre Nazé
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo, Brazil
| | - Sebastian Deffner
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo, Brazil.,Department of Physics, University of Maryland, Baltimore County, Baltimore, Maryland 21250, USA
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37
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Mateo D, Cerrillo JL, Durini S, Gascon J. Fundamentals and applications of photo-thermal catalysis. Chem Soc Rev 2021; 50:2173-2210. [DOI: 10.1039/d0cs00357c] [Citation(s) in RCA: 141] [Impact Index Per Article: 47.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Photo-thermal catalysis has recently emerged as an alternative route to drive chemical reactions using light as an energy source.
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Affiliation(s)
- Diego Mateo
- King Abdullah University of Science and Technology
- KAUST Catalysis Center (KCC)
- Advanced Catalytic Materials
- Thuwal 23955-6900
- Saudi Arabia
| | - Jose Luis Cerrillo
- King Abdullah University of Science and Technology
- KAUST Catalysis Center (KCC)
- Advanced Catalytic Materials
- Thuwal 23955-6900
- Saudi Arabia
| | - Sara Durini
- King Abdullah University of Science and Technology
- KAUST Catalysis Center (KCC)
- Advanced Catalytic Materials
- Thuwal 23955-6900
- Saudi Arabia
| | - Jorge Gascon
- King Abdullah University of Science and Technology
- KAUST Catalysis Center (KCC)
- Advanced Catalytic Materials
- Thuwal 23955-6900
- Saudi Arabia
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38
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Precise nanoscale temperature mapping in operational microelectronic devices by use of a phase change material. Sci Rep 2020; 10:20087. [PMID: 33208765 PMCID: PMC7674486 DOI: 10.1038/s41598-020-77021-1] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2020] [Accepted: 10/21/2020] [Indexed: 01/16/2023] Open
Abstract
The microelectronics industry is pushing the fundamental limit on the physical size of individual elements to produce faster and more powerful integrated chips. These chips have nanoscale features that dissipate power resulting in nanoscale hotspots leading to device failures. To understand the reliability impact of the hotspots, the device needs to be tested under the actual operating conditions. Therefore, the development of high-resolution thermometry techniques is required to understand the heat dissipation processes during the device operation. Recently, several thermometry techniques have been proposed, such as radiation thermometry, thermocouple based contact thermometry, scanning thermal microscopy, scanning transmission electron microscopy and transition based threshold thermometers. However, most of these techniques have limitations including the need for extensive calibration, perturbation of the actual device temperature, low throughput, and the use of ultra-high vacuum. Here, we present a facile technique, which uses a thin film contact thermometer based on the phase change material \documentclass[12pt]{minimal}
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\begin{document}$$Ge_2 Sb_2 Te_5$$\end{document}Ge2Sb2Te5, to precisely map thermal contours from the nanoscale to the microscale. \documentclass[12pt]{minimal}
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\begin{document}$$Ge_2 Sb_2 Te_5$$\end{document}Ge2Sb2Te5 undergoes a crystalline transition at \documentclass[12pt]{minimal}
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\begin{document}$$\hbox {T}_{{g}}$$\end{document}Tg with large changes in its electric conductivity, optical reflectivity and density. Using this approach, we map the surface temperature of a nanowire and an embedded micro-heater on the same chip where the scales of the temperature contours differ by three orders of magnitude. The spatial resolution can be as high as 20 nanometers thanks to the continuous nature of the thin film.
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39
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Gächter N, Könemann F, Sistani M, Bartmann MG, Sousa M, Staudinger P, Lugstein A, Gotsmann B. Spatially resolved thermoelectric effects in operando semiconductor-metal nanowire heterostructures. NANOSCALE 2020; 12:20590-20597. [PMID: 33030483 DOI: 10.1039/d0nr05504b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al2O3 shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.
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Affiliation(s)
| | | | - Masiar Sistani
- Institute of Solid State Electronics - TU Wien, 1040 Vienna, Austria
| | | | | | | | - Alois Lugstein
- Institute of Solid State Electronics - TU Wien, 1040 Vienna, Austria
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40
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Hubbard WA, Mecklenburg M, Lodico JJ, Chen Y, Ling XY, Patil R, Kessel WA, Flatt GJK, Chan HL, Vareskic B, Bal G, Zutter B, Regan BC. Electron-Transparent Thermoelectric Coolers Demonstrated with Nanoparticle and Condensation Thermometry. ACS NANO 2020; 14:11510-11517. [PMID: 32790350 DOI: 10.1021/acsnano.0c03958] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
More efficient thermoelectric devices would revolutionize refrigeration and energy production, and low-dimensional thermoelectric materials are predicted to be more efficient than their bulk counterparts. But nanoscale thermoelectric devices generate thermal gradients on length scales that are too small to resolve with traditional thermometry methods. Here we fabricate, using single-crystal bismuth telluride (Bi2Te3) and antimony/bismuth telluride (Sb2-xBixTe3) flakes exfoliated from commercially available bulk materials, functional thermoelectric coolers (TECs) that are only 100 nm thick. These devices are the smallest TECs ever demonstrated by a factor of 104. After depositing indium nanoparticles to serve as nanothermometers, we measure the heating and cooling produced by the devices with plasmon energy expansion thermometry (PEET), a high-spatial-resolution, transmission electron microscopy (TEM)-based thermometry technique, demonstrating a ΔT = -21 ± 4 K from room temperature. We also establish proof-of-concept for condensation thermometry, a quantitative temperature-change mapping technique with a spatial precision of ≲300 nm.
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Affiliation(s)
- William A Hubbard
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Matthew Mecklenburg
- Core Center of Excellence in Nano Imaging, University of Southern California, Los Angeles, California 90089, United States
| | - Jared J Lodico
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Yueyun Chen
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Xin Yi Ling
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Roshni Patil
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - W Andrew Kessel
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Graydon J K Flatt
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Ho Leung Chan
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - Bozo Vareskic
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Gurleen Bal
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
| | - Brian Zutter
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
| | - B C Regan
- Department of Physics and Astronomy, University of California, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
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41
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Denisov AO, Tikhonov ES, Piatrusha SU, Khrapach IN, Rossella F, Rocci M, Sorba L, Roddaro S, Khrapai VS. Strategy for accurate thermal biasing at the nanoscale. NANOTECHNOLOGY 2020; 31:324004. [PMID: 32325444 DOI: 10.1088/1361-6528/ab8c74] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire-based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias-which depends on their dimensions, shape and material composition-is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale.
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Affiliation(s)
- Artem O Denisov
- Institute of Solid State Physics Russian Academy of Sciences 142432 Chernogolovka Russian Federation. Moscow Institute of Physics and Technology Dolgoprudny 141700 Russian Federation
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Martinez A, Barker JR. Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation. MATERIALS (BASEL, SWITZERLAND) 2020; 13:ma13153326. [PMID: 32722649 PMCID: PMC7435733 DOI: 10.3390/ma13153326] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/12/2020] [Revised: 07/08/2020] [Accepted: 07/23/2020] [Indexed: 06/11/2023]
Abstract
A review and perspective is presented of the classical, semiclassical and fully quantum routes to the simulation of electrothermal phenomena in ultrascaled silicon nanowire fieldeffect transistors. It is shown that the physics of ultrascaled devices requires at least a coupled electron quantum transport semiclassical heat equation model outlined here. The importance of the local density of states (LDOS) is discussed from classical to fully quantum versions. It is shown that the minimal quantum approach requires selfconsistency with the Poisson equation and that the electronic LDOS must be determined within at least the selfconsistent Born approximation. To bring in this description and to provide the energy resolved local carrier distributions it is necessary to adopt the nonequilibrium Green function (NEGF) formalism, briefly surveyed here. The NEGF approach describes quantum coherent and dissipative transport, Pauli exclusion and nonequilibrium conditions inside the device. There are two extremes of NEGF used in the community. The most fundamental is based on coupled equations for the Green functions electrons and phonons that are computed at the atomically resolved level within the nanowire channel and into the surrounding device structure using a tight binding Hamiltonian. It has the advantage of treating both the nonequilibrium heat flow within the electron and phonon systems even when the phonon energy distributions are not described by a temperature model. The disadvantage is the grand challenge level of computational complexity. The second approach, that we focus on here, is more useful for fast multiple simulations of devices important for TCAD (Technology Computer Aided Design). It retains the fundamental quantum transport model for the electrons but subsumes the description of the energy distribution of the local phonon subsystem statistics into a semiclassical Fourier heat equation that is sourced by the local heat dissipation from the electron system. It is shown that this selfconsistent approach retains the salient features of the fullscale approach. For focus, we outline our electrothermal simulations for a typical narrow Si nanowire gate allaround fieldeffect transistor. The selfconsistent Born approximation is used to describe electronphonon scattering as the source of heat dissipation to the lattice. We calculated the effect of the device selfheating on the current voltage characteristics. Our fast and simpler methodology closely reproduces the results of a more fundamental computeintensive calculations in which the phonon system is treated on the same footing as the electron system. We computed the local power dissipation and "local lattice temperature" profiles. We compared the selfheating using hot electron heating and the Joule heating, i.e., assuming the electron system was in local equilibrium with the potential. Our simulations show that at low bias the source region of the device has a tendency to cool down for the case of the hot electron heating but not for the case of Joule heating. Our methodology opens the possibility of studying thermoelectricity at nanoscales in an accurate and computationally efficient way. At nanoscales, coherence and hot electrons play a major role. It was found that the overall behaviour of the electron system is dominated by the local density of states and the scattering rate. Electrons leaving the simulated drain region were found to be far from equilibrium.
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Affiliation(s)
- Antonio Martinez
- College of Engineering, Swansea University, Engineering East, Fabian Way, Crymlyn Burroughs, Swansea SA1 8EN, UK
| | - John R. Barker
- James Watt School of Engineering, College of Science and Engineering, University of Glasgow, Glasgow G12 8LT, Scotland, UK;
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43
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Ridier K, Bas AC, Zhang Y, Routaboul L, Salmon L, Molnár G, Bergaud C, Bousseksou A. Unprecedented switching endurance affords for high-resolution surface temperature mapping using a spin-crossover film. Nat Commun 2020; 11:3611. [PMID: 32681047 PMCID: PMC7367879 DOI: 10.1038/s41467-020-17362-7] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2020] [Accepted: 06/23/2020] [Indexed: 11/28/2022] Open
Abstract
Temperature measurement at the nanoscale is of paramount importance in the fields of nanoscience and nanotechnology, and calls for the development of versatile, high-resolution thermometry techniques. Here, the working principle and quantitative performance of a cost-effective nanothermometer are experimentally demonstrated, using a molecular spin-crossover thin film as a surface temperature sensor, probed optically. We evidence highly reliable thermometric performance (diffraction-limited sub-µm spatial, µs temporal and 1 °C thermal resolution), which stems to a large extent from the unprecedented quality of the vacuum-deposited thin films of the molecular complex [Fe(HB(1,2,4-triazol-1-yl)3)2] used in this work, in terms of fabrication and switching endurance (>107 thermal cycles in ambient air). As such, our results not only afford for a fully-fledged nanothermometry method, but set also a forthcoming stage in spin-crossover research, which has awaited, since the visionary ideas of Olivier Kahn in the 90’s, a real-world, technological application. Developing novel thermometry techniques for nanoscale temperature measurements are vital for realizing efficient thermal management of nanoscale devices. Here, the authors report thermally stable spin-crossover material-based nanothermometers for high-resolution surface temperature mapping.
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Affiliation(s)
- Karl Ridier
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France
| | - Alin-Ciprian Bas
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France
| | - Yuteng Zhang
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France
| | - Lucie Routaboul
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France
| | - Lionel Salmon
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France
| | - Gábor Molnár
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France.
| | - Christian Bergaud
- Laboratoire d'Analyse et d'Architecture des Systèmes, CNRS UPR 8001, 7 avenue du Colonel Roche, F-31400, Toulouse, France
| | - Azzedine Bousseksou
- Laboratoire de Chimie de Coordination, CNRS UPR 8241, 205 route de Narbonne, F-31077, Toulouse, France.
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Hu X, Gong X, Zhang M, Lu H, Xue Z, Mei Y, Chu PK, An Z, Di Z. Enhanced Peltier Effect in Wrinkled Graphene Constriction by Nano-Bubble Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1907170. [PMID: 32105406 DOI: 10.1002/smll.201907170] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2019] [Revised: 01/19/2020] [Indexed: 06/10/2023]
Abstract
Inspired by the promising applications in thermopower generation from waste heat and active on-chip cooling, the thermoelectric and electrothermal properties of graphene have been extensively pursued by seeking ingeniously designed structures with thermoelectric conversion capability. The graphene wrinkle is a ubiquitous structure formed inevitably during the synthesis of large-scale graphene films but the corresponding properties for thermoelectric and electrothermal applications are rarely investigated. Here, the electrothermal Peltier effect from the graphene wrinkle fabricated on a germanium substrate is reported. Peltier cooling and heating across the wrinkle are visualized unambiguously with polarities consistent with p-type doping and in accordance with the wrinkle spatial distribution. By direct patterning of the nano-bubble structure, the current density across the wrinkle can be boosted by current crowding to enhance the Peltier effect. The observed Peltier effect can be attributed to the nonequilibrium charge transport by interlayer tunneling across the van der Waals barrier of the graphene wrinkle. The graphene wrinkle in combination with nano-bubble engineering constitutes an innovative and agile platform to design graphene and other more general two-dimensional (2D) thermoelectrics and opens the possibility for realizing active on-chip cooling for 2D nanoelectronics with van der Waals junctions.
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Affiliation(s)
- Xudong Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xue Gong
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Key Laboratory of Micro and Nano Photonics Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Miao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Huihui Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, 200433, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, Key Laboratory of Micro and Nano Photonics Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
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45
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Ziabari A, Parsa M, Xuan Y, Bahk JH, Yazawa K, Alvarez FX, Shakouri A. Far-field thermal imaging below diffraction limit. OPTICS EXPRESS 2020; 28:7036-7050. [PMID: 32225939 DOI: 10.1364/oe.380866] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2019] [Accepted: 02/05/2020] [Indexed: 06/10/2023]
Abstract
Non-uniform self-heating and temperature hotspots are major concerns compromising the performance and reliability of submicron electronic and optoelectronic devices. At deep submicron scales where effects such as contact-related artifacts and diffraction limits accurate measurements of temperature hotspots, non-contact thermal characterization can be extremely valuable. In this work, we use a Bayesian optimization framework with generalized Gaussian Markov random field (GGMRF) prior model to obtain accurate full-field temperature distribution of self-heated metal interconnects from their thermoreflectance thermal images (TRI) with spatial resolution 2.5 times below Rayleigh limit for 530nm illumination. Finite element simulations along with TRI experimental data were used to characterize the point spread function of the optical imaging system. In addition, unlike iterative reconstruction algorithms that use ad hoc regularization parameters in their prior models to obtain the best quality image, we used numerical experiments and finite element modeling to estimate the regularization parameter for solving a real experimental inverse problem.
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Abstract
The Wiedemann-Franz (WF) law is a fundamental result in solid-state physics that relates the thermal and electrical conductivity of a metal. It is derived from the predominant transport mechanism in metals: the motion of quasi-free charge-carrying particles. Here, an equivalent WF relationship is developed for molecular systems in which charge carriers are moving not as free particles but instead hop between redox sites. We derive a concise analytical relationship between the electrical and thermal conductivity generated by electron hopping in molecular systems and find that the linear temperature dependence of their ratio as expressed in the standard WF law is replaced by a linear dependence on the nuclear reorganization energy associated with the electron hopping process. The robustness of the molecular WF relation is confirmed by examining the conductance properties of a paradigmatic molecular junction. This result opens a new way to analyze conductivity in molecular systems, with possible applications advancing the design of molecular technologies that derive their function from electrical and/or thermal conductance.
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Affiliation(s)
- Galen T Craven
- Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Abraham Nitzan
- Department of Chemistry , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
- School of Chemistry , Tel Aviv University , Tel Aviv 69978 , Israel
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47
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Qiu X, Zhou Q, Zhu X, Wu Z, Feng W, Li F. Ratiometric upconversion nanothermometry with dual emission at the same wavelength decoded via a time-resolved technique. Nat Commun 2020; 11:4. [PMID: 31911593 PMCID: PMC6946702 DOI: 10.1038/s41467-019-13796-w] [Citation(s) in RCA: 86] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 11/27/2019] [Indexed: 12/12/2022] Open
Abstract
The in vivo temperature monitoring of a microenvironment is significant in biology and nanomedicine research. Luminescent nanothermometry provides a noninvasive method of detecting the temperature in vivo with high sensitivity and high response speed. However, absorption and scattering in complex tissues limit the signal penetration depth and cause errors due to variation at different locations in vivo. In order to minimize these errors and monitor temperature in vivo, in the present work, we provided a strategy to fabricate a same-wavelength dual emission ratiometric upconversion luminescence nanothermometer based on a hybrid structure composed of upconversion emissive PbS quantum dots and Tm-doped upconversion nanoparticles. The ratiometric signal composed of two upconversion emissions working at the same wavelength, but different luminescent lifetimes, were decoded via a time-resolved technique. This nanothermometer improved the temperature monitoring ability and a thermal resolution and sensitivity of ~0.5 K and ~5.6% K−1 were obtained in vivo, respectively. Traditional ratiometric temperature monitoring is challenging due to the variation in tissue absorption and scattering of different wavelengths. Here, the authors show improved accuracy by using emission at the same wavelength, but different luminescent lifetimes decoded by a time-resolved technique.
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Affiliation(s)
- Xiaochen Qiu
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China
| | - Qianwen Zhou
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China
| | - Xingjun Zhu
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China
| | - Zugen Wu
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China
| | - Wei Feng
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China.
| | - Fuyou Li
- Department of Chemistry & State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005 Songhu Road, Shanghai, 200433, P. R. China.
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Cheng P, Ding Z, Yuan H, Zheng D, An P, Wang Z, Zhao H, Bao J. Probing SPR heating of metal nanostructures coated on fiber based plasmonic sensor. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2019.136869] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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49
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Zhang Y, Zhu W, Han L, Borca-Tasciuc T. Quantitative temperature distribution measurements by non-contact scanning thermal microscopy using Wollaston probes under ambient conditions. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2020; 91:014901. [PMID: 32012522 DOI: 10.1063/1.5099981] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2019] [Accepted: 12/10/2019] [Indexed: 05/28/2023]
Abstract
Temperature measurement using Scanning Thermal Microscopy (SThM) usually involves heat transfer across the mechanical contact and liquid meniscus between the thermometer probe and the sample. Variations in contact conditions due to capillary effects at sample-probe contact and wear and tear of the probe and sample interfere with the accurate determination of the sample surface temperature. This paper presents a method for quantitative temperature sensing using SThM in noncontact mode. In this technique, the thermal probe is scanned above the sample at a distance comparable with the mean free path of ambient gas molecules. A Three-Dimensional Finite Element Model (3DFEM) that includes the details of the heat transfer between the sample and the probe in the diffusive and transition heat conduction regimes was found to accurately simulate the temperature profiles measured using a Wollaston thermal probe setup. In order to simplify the data reduction for the local sample temperature, analytical models were developed for noncontact measurements using Wollaston probes. Two calibration strategies (active calibration and passive calibration) for the sample-probe thermal exchange parameters are presented. Both calibration methods use sample-probe thermal exchange resistance correlations developed using the 3DFEM to accurately capture effects due to sample-probe gap geometry and the thermal exchange radii in the diffusive and transition regimes. The analytical data reduction methods were validated by experiments and 3DFEM simulations using microscale heaters deposited on glass and on dielectric films on silicon substrates. Experimental and predicted temperature profiles were independent of the probe-sample clearance in the range of 100-200 nm, where the sample-probe thermal exchange resistance is practically constant. The difference between the SThM determined and actual average microheater temperature rise was between 0.1% and 0.5% when using active calibration on samples with known thermal properties and between ∼1.6% and 3.5% when using passive calibration, which yields robust sample-probe thermal exchange parameters that can be used also on samples with unknown thermal properties.
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Affiliation(s)
- Yun Zhang
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
| | - Wenkai Zhu
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
| | - Liang Han
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
| | - Theodorian Borca-Tasciuc
- Mechanical, Aerospace, and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
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Highly cooperative fluorescence switching of self-assembled squaraine dye at tunable threshold temperatures using thermosensitive nanovesicles for optical sensing and imaging. Sci Rep 2019; 9:17991. [PMID: 31784685 PMCID: PMC6884458 DOI: 10.1038/s41598-019-54418-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2019] [Accepted: 11/15/2019] [Indexed: 12/11/2022] Open
Abstract
Thermosensitive fluorescent dyes can convert thermal signals into optical signals as a molecular nanoprobe. These nanoprobes are playing an increasingly important part in optical temperature sensing and imaging at the nano- and microscale. However, the ability of a fluorescent dye itself has sensitivity and accuracy limitations. Here we present a molecular strategy based on self-assembly to overcome such limitations. We found that thermosensitive nanovesicles composed of lipids and a unique fluorescent dye exhibit fluorescence switching characteristics at a threshold temperature. The switch is rapid and reversible and has a high signal to background ratio (>60), and is also highly sensitive to temperature (10–22%/°C) around the threshold value. Furthermore, the threshold temperature at which fluorescence switching is induced, can be tuned according to the phase transition temperature of the lipid bilayer membrane forming the nanovesicles. Spectroscopic analysis indicated that the fluorescence switching is induced by the aggregation-caused quenching and disaggregation-induced emission of the fluorescent dye in a cooperative response to the thermotropic phase transition of the membrane. This mechanism presents a useful approach for chemical and material design to develop fluorescent nanomaterials with superior fluorescence sensitivity to thermal signals for optical temperature sensing and imaging at the nano- and microscales.
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