Control of carrier density by self-assembled monolayers in organic field-effect transistors

Engineering multifunctional surface topography to regulate multiple biological responses

Surface topography or curvature plays a crucial role in regulating cell behavior, influencing processes such as adhesion, proliferation, and gene expression. Recent advancements in nano- and micro-fabrication techniques have enabled the development of biomimetic systems that mimic native extracellular matrix (ECM) structures, providing new insights into cell-adhesion mechanisms, mechanotransduction, and cell-environment interactions. This review examines the diverse applications of engineered topographies across multiple domains, including antibacterial surfaces, immunomodulatory devices, tissue engineering scaffolds, and cancer therapies. It highlights how nanoscale features like nanopillars and nanospikes exhibit bactericidal properties, while many microscale patterns can direct stem cell differentiation and modulate immune cell responses. Furthermore, we discuss the interdisciplinary use of topography for combined applications, such as the simultaneous regulation of immune and tissue cells in 2D and 3D environments. Despite significant advances, key knowledge gaps remain, particularly regarding the effects of topographical cues on multicellular interactions and dynamic 3D contexts. This review summarizes current fabrication methods, explores specific and interdisciplinary applications, and proposes future research directions to enhance the design and utility of topographically patterned biomaterials in clinical and experimental settings.

Spontaneous switching and fine structure of donor-acceptor Stenhouse adducts on Au(111)

We present the spontaneous isomerization of donor-acceptor Stenhouse adducts anchored onto a gold surface, visualized using scanning tunneling spectroscopy. Our investigation reveals a palette of molecular arrangements, including those with ferroelectric-like ordering, evolving over time into a fine pattern consisting of both open and closed forms of the photoswitch.

ZnO Nanowires/Self-Assembled Monolayer Mediated Selective Detection of Hydrogen

We are proposing a novel self-assembled monolayer (SAM) functionalized ZnO nanowires (NWs)-based conductometric sensor for the selective detection of hydrogen (H2). The modulation of the surface electron density of ZnO NWs due to the presence of negatively charged terminal amine groups (-NH2) of monolayers leads to an enhanced electron donation from H2 to ZnO NWs. This, in turn, increases the relative change in the conductance (response) of functionalized ZnO NWs as compared to bare ones. In contrast, the sensing mechanism of bare ZnO NWs is determined by the chemisorbed oxygen ions. The functionalized ZnO NWs exhibit an eight times higher response compared to bare ZnO NWs at an optimal working temperature of 200 °C. Finally, in comparison to studies in the literature involving strategies to enhance the sensing performance of metal oxides toward H2, like decoration with metal nanoparticles, heterostructures, and functionalization with a metal-organic framework, etc., SAM functionalization showed superior sensing results.

Electrostatically Designing Materials and Interfaces

Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Field-effect transistors (FETs) based on two-dimensional molybdenum disulfide (2D-MoS2) have great potential in electronic and optoelectronic applications, but the performances of these devices still face challenges such as scattering at the contact interface, which results in reduced mobility. In this work, we fabricated high-performance MoS2-FETs by inserting self-assembling monolayers (SAMs) between MoS2 and a SiO2 dielectric layer. The interface properties of MoS2/SiO2 were studied after the inductions of three different SAM structures including (perfluorophenyl)methyl phosphonic acid (PFPA), (4-aminobutyl) phosphonic acid (ABPA), and octadecylphosphonic acid (ODPA). The SiO2/ABPA/MoS2-FET exhibited significantly improved performances with the highest mobility of 528.7 cm2 V-1 s-1, which is 7.5 times that of SiO2/MoS2-FET, and an on/off ratio of ~106. Additionally, we investigated the effects of SAM molecular dipole vectors on device performances using density functional theory (DFT). Moreover, the first-principle calculations showed that ABPA SAMs reduced the frequencies of acoustic and optical phonons in the SiO2 dielectric layer, thereby suppressing the phonon scattering to the MoS2 channel and further improving the device's performance. This work provided a strategy for high-performance MoS2-FET fabrication by improving interface properties.

Efficiently tuning the electrical performance of PBTTT-C14 thin film viainsitucontrollable multiple precursors (Al2O3:ZnO) vapor phase infiltration

Conjugated polymer-based organic/inorganic hybrid materials become the current research frontier and show great potential to integrate flexible polymers and rigid solid materials, which have been widely used in the field of various flexible electronics and optical devices. In this study, based on the multiple vapor phase infiltration (VPI) process, various precursor molecules (diethylzinc DEZ, trimethylaluminum TMA, H2O) are applied for thein situmodification of PBTTT-C14 films. The conductivity of the PBTTT-C14/Al2O3:ZnO (AZO) film is significantly enhanced, and the maximum value of conductivity is 1.16 S cm-1, which is eight orders of magnitude higher than the undoped PBTTT-C14 thin film. Here, the change of morphologies and crystalline states are analyzed via SEM, AFM, and XRD. And the chemical changes during the VPI process of PBTTT-C14 are characterized through Raman, XPS, and UV-vis. During the AZO VPI process, the formation of new ZnS matrix in the polymer subsurface can generate new additional electron conduction pathways through the crosslinking of polymer chains with inorganic materials, and the addition of Al2O3can bring about the increase of average grain size of ZnO crystals, which is also benefit to the conductivity increase of PBTTT-C14 thin film. Generally, the synergistic effect between the inorganic and polymer constituents results in the significantly enhancement of the conductivity of PBTTT-C14/AZO thin films.

Two-Dimensional Conjugated Polymers: a New Choice For Organic Thin-Film Transistors

Organic thin-film transistors (OTFTs) as a vital component among transistors have shown great potential in smart sensing, flexible displays, and bionics due to their flexibility, biocompatibility and customizable chemical structures. Even though linear conjugated polymer semiconductors are common for constructing channel materials of OTFTs, advanced materials with high charge carrier mobility, tunable band structure, robust stability, and clear structure-property relationship are indispensable for propelling the evolution of OTFTs. Two-dimensional conjugated polymers (2DCPs), featured with conjugated lattice, tailorable skeletons, and functional porous structures, match aforementioned criteria closely. In this review, we firstly introduce the synthesis of 2DCP thin films, focusing on their characteristics compatible with the channels of OTFTs. Subsequently, the physics and operating mechanisms of OTFTs and the applications of 2DCPs in OTFTs are summarized in detail. Finally, the outlook and perspective in the field of OTFTs using 2DCPs are provided as well.

Retina-inspired organic neuromorphic vision sensor with polarity modulation for decoding light information

The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. However, the mechanism of modulating charge transport on basis of PFGs in devices is unclear. Here, the carboxyl group is introduced into polymer dielectrics in this study, and it can induce the charge transfer process at the semiconductor/dielectric interfaces for effective carrier transport, giving rise to the best device mobility up to 20 cm2 V-1 s-1 at a low operating voltage of -1 V. Furthermore, the polarity modulation effect could further increase the optical figures of merit in NeuVS devices by at least an order of magnitude more than the devices using carboxyl group-free polymer dielectrics. Additionally, devices containing carboxyl groups improved image sensing for light information decoding with 52 grayscale signals and memory capabilities at an incredibly low power consumption of 1.25 fJ/spike. Our findings provide insight into the production of high-performance polymer dielectrics for NeuVS devices.

Thermal annealing promoted room temperature phosphorescence: motion models and internal mechanism

Thermal annealing has been proven to be an efficient method to optimize the device performance of organic and polymeric opto-electronic materials. However, no detailed information of aggregate structures was obtained for a deeper understanding of what happens during thermal annealing. Herein, through modulation of molecular configurations by tunable linkage positions, and the amplified amplitudes of molecular motions by incorporation of additional methylene units, accurate changes of aggregated structures upon thermal annealing have been achieved, accompanying with the 'turn-on' room temperature phosphorescence (RTP) response by about 4800- and 177-fold increase of lifetimes. The stretching and swing motion models have been proposed, which afforded an efficient way to investigate the science of dynamic aggregation in depth.

Triiodide Attacks the Organic Cation in Hybrid Lead Halide Perovskites: Mechanism and Suppression

Molecular I2 can be produced from iodide-based lead perovskites under thermal stress; triiodide, I3 - , is formed from this I2 and I- . Triiodide attacks protic cation MA+ - or FA+ -based lead halide perovskites (MA+ , methylammonium; FA+ , formamidinium) as explicated through solution-based nuclear magnetic resonance (NMR) studies: triiodide has strong hydrogen-bonding affinity for MA+ or FA+ , which leads to their deprotonation and perovskite decomposition. Triiodide is a catalyst for this decomposition that can be obviated through perovskite surface treatment with thiol reducing agents. In contrast to methods using thiol incorporation into perovskite precursor solutions, no penetration of the thiol into the bulk perovskite is observed, yet its surface application stabilizes the perovskite against triiodide-mediated thermal stress. Thiol applied to the interface between FAPbI3 and Spiro-OMeTAD ("Spiro") prevents oxidized iodine species penetration into Spiro and thus preserves its hole-transport efficacy. Surface-applied thiol affects the perovskite work function; it ameliorates hole injection into the Spiro overlayer, thus improving device performance. It helps to increase interfacial adhesion ("wetting"): fewer voids are observed at the Spiro/perovskite interface if thiols are applied. Perovskite solar cells (PSCs) incorporating interfacial thiol treatment maintain over 80% of their initial power conversion efficiency (PCE) after 300 h of 85 °C thermal stress.

Individual and synergetic charge transport properties at the solid and electrolyte interfaces of a single ultrathin single crystal of organic semiconductors

The chemical structures and morphologies of organic semiconductors (OSCs) and gate dielectrics have been widely investigated to improve the electrical performances of organic thin-film transistors (OTFTs) because the charge transport therein is a phenomenon at the semiconductor-dielectric interfaces. Here, solid and ionic gel gate dielectrics were adopted on the lower and upper surfaces, respectively, of a single, two molecule-thick single crystals of p-type OSCs to study the charge transport properties at individual interfaces between the morphologically compatible OSC surface and different gate dielectrics. Using the four-probe method, the solid and ionic gel interfaces were found to exhibit hole mobilities of 9.3 and 2.2 cm² V^-1 s^-1, respectively, which revealed the crucial impact of the gate dielectric materials on the interfacial charge transport. Interestingly, when gate biases are applied through both dielectrics, i.e., under the solid/ionic gel dual-gate transistor operation, the hole mobility at the solid gate interface is improved up to 14.7 cm² V^-1 s^-1, which is 1.5 times greater than that assessed without the ionic gel gate. This improvement can be attributed to the electric double layer formed at the ionic gel/uniform crystal surface, which provides a close-to-ideal charge transport interface through dramatic trap-filling. Therefore, the present dual-gate transistor technique will be promising for investigating the intrinsic charge-transport capabilities of OSCs.

High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets

As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 10⁸ over 10⁴ s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.

Charge Transport Manipulation via Interface Doping: Achieving Ultrasensitive Organic Semiconductor Gas Sensors

Organic semiconductor (OSC) gas sensors are receiving tremendous attention with the rise of wearable devices. Due to the complicated charge transport characteristics of OSCs, it is usually difficult to optimize their gas sensitivity by directly tailoring the original signals, as in many other kinds of sensors. Instead, device engineering strategies are frequently centered on enhancing the gas-film interaction. Herein, by introducing interface doping between self-assembled monolayers and triisopropylsilylethynyl-substituted pentacene films, we report a wide tuning of OSC gas sensitivity via charge transport manipulation and achieve an ultrahigh sensitivity of nearly 2000%/ppm to NO₂, simultaneously resulting in a fast square-wave-like response feature. In addition, this sensor demonstrates good humidity stability and operates well in flexible devices. More importantly, we identify that charge transport manipulation tailors the gas sensibility of OSCs by means of electronic structure instead of original signal values: compared to shallow traps, the presence of proper deep traps is conducive to gaining high sensitivity and ultrafast response/recovery speeds. This approach is also effective for tuning the sensitivity to reductive gases, verifying its generality for promoting the performance of OSC gas sensors, as well as a promising strategy for other types of sensors or detectors.

Self-assembled monolayer functionalized NiO nanowires: strategy to enhance the sensing performance of p-type metal oxide

A novel strategy for the improvement in the sensing performance of p-type NiO is developed by employing the unique functional properties of self-assembled monolayers. Specifically, hole concentration near the surface of NiO nanowires (NWs) is modulated by terminal epoxy groups of the organosilane. This modulation leads to the increase in electron transfer from reducing gases to NWs surface. As a result, SAM-functionalized sensors showed 9-times higher response at low-temperature as compared to bare NiO NWs.

Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier

Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm²/V·s, an on-off ratio above 10⁷, and a low contact resistance of 612 Ω. Because of the high electrical performance of tailored SAMs, they function as a Cu DB and a passivation layer. Moreover, a selectively tailored functional group can improve the adhesion properties between Cu and a-IGZO. These multifunctionally tailored SAMs can be a promising candidate for a very thin Cu DB in future electronic technology.

Spontaneous formation of metastable orientation with well-organized permanent dipole moment in organic glassy films

The performance of organic optoelectronic and energy-harvesting devices is largely determined by the molecular orientation and resultant permanent dipole moment, yet this property is difficult to control during film preparation. Here, we demonstrate the active control of dipole direction-that is, vector direction and magnitude-in organic glassy films by physical vapour deposition. An organic glassy film with metastable permanent dipole moment orientation can be obtained by utilizing the small surface free energy of a trifluoromethyl unit and intramolecular permanent dipole moment induced by functional groups. The proposed molecular design rule could pave a way toward the formation of spontaneously polarized organic glassy films, leading to improvement in the performance of organic molecular devices.

Field-effect surface chemistry: chemical reactions on two-dimensional materials controlled by field-effect transistor configurations

Because chemical reactions are largely governed by the movement of electrons, it is possible to control chemical reactions using electronic devices that provide functionality by controlling the movement of electrons in a solid. In this perspective, we discuss the concept of "field-effect surface chemistry," which controls chemical reactions on two-dimensional materials using field-effect transistors (FETs), a representative electronic device. The electrical voltages to be applied for the FET operation are the gate voltage and drain voltage. The former is expected to control the Fermi level and exert the effect of the electric field directly on the reactants, while the latter is expected to provide local heating by Joule heat and energy transfer to the reactants. Further, we discuss a sample structure that does not require any voltage but has the same effect as the gate voltage.

Constrain Effect of Charge Traps in Organic Field-Effect Transistors with Ferroelectric Polymer as a Dielectric Interfacial Layer

Traps play crucial roles in the charge transport of disordered organic semiconductors and can significantly influence the electrical performance of organic functional devices. The constrain effect of charge traps in organic field-effect transistors with a ferroelectric polymer as a dielectric interfacial layer has been studied at temperatures ranging from 30 °C to temperature beyond the Curie point of the ferroelectric polymers by utilizing a thermally stable polymer as the semiconducting channel. It has been observed that the charge traps are constrained within a shallow energy level with the ferroelectric interfacial layer. The change in the density of traps involved in the trap-filling process at temperatures across the Curie point shows that the decrease in shallow traps is almost proportional to the increase in deep traps, indicating the transition between shallow and deep traps in the semiconducting channel. These findings suggest potential in stability increase and performance enhancement of future organic functional devices via modulation of traps by a ferroelectric interfacial layer.

Heterogeneous Functional Dielectric Patterns for Charge-Carrier Modulation in Ultraflexible Organic Integrated Circuits

Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (-1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-VGS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-VGS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.

Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector

Understanding and designing interfacial band alignment in a molecular heterojunction provides a foundation for realizing its desirable electronic functionality. In this study, a tailored molecular heterojunction selector is implemented by controlling its interfacial band offset between the molecular self-assembled monolayer with opposite dipole orientations and the 2D semiconductor (1L -MoS2 or 1L -WSe2 ). The molecular dipole moment direction determines the direction of the band bending of the 2D semiconductors, affecting the dominant transport pathways upon voltage application. Notably, in the molecular heterostructure with 1L -WSe2 , the opposite rectification direction is observed depending on the molecular dipole moment direction, which does not hold for the case with 1L -MoS2 . In addition, the nonlinearity of the molecular heterojunction selector can be significantly affected by the molecular dipole moment direction, type of 2D semiconductor, and metal work function. According to the choice of these heterojunction constituents, the nonlinearity is widely tuned from 1.0 × 101 to 3.6 × 104 for the read voltage scheme and from 0.4 × 101 to 2.0 × 105 for the half-read voltage scheme, which can be scaled up to an ≈482 Gbit crossbar array.

Using Patterned Self-Assembled Monolayers to Tune Graphene-Substrate Interactions

Graphene has unique mechanical, electronic, and optical properties that make it of interest for an array of applications. These properties can be modulated by controlling the architecture of graphene and its interactions with surfaces. Self-assembled monolayers (SAMs) can tailor graphene-surface interactions; however, spatially controlling these interactions remains a challenge. Here, we blend colloidal lithography with varying SAM chemistries to create patterned architectures that modify the properties of graphene based on its chemical interactions with the substrate and to study how these interactions are spatially arrayed. The patterned systems and their resulting structural, nanomechanical, and optical properties have been characterized using atomic force microscopy, Raman and infrared spectroscopies, scattering-type scanning near-field optical microscopy, and X-ray photoelectron spectroscopy.

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron-donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field-effect transistor. The influence of these groups on dielectric function, charge retention, and threshold voltage shifts (ΔV_th) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV_th). We created three types of devices: with the substituted PS layer as single-layer dielectric, on top of a cross-linked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Especially large bias stress effects and ΔV_th, larger than those in the case of the hexamethoxy and previously studied dimethoxy analogues, were observed in the second case, and the effects increased with the increasing electron-donating properties of the modified side chains. The highest ΔV_th was consistent with a majority of the side chains stabilizing the trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV_th, respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

Manipulating Carrier Concentration by Self-Assembled Monolayers in Thermoelectric Polymer Thin Films

Conjugated polymers have attracted considerable attention for thermoelectric applications in recent years due to their plentiful resources, diverse structures, mechanical flexibility, and low thermal conductivity. Herein, we demonstrate a new strategy of modulating charge carrier concentration of chemical-doped polymer films by modifying the substrate with self-assembled monolayers (SAMs). The SAM with a trifluoromethyl terminal group is found to accumulate holes in the polymer thin films, while the SAM with an amino terminal group tends to donate electrons to the polymer films. Thermoelectric thin films of conjugated donor-acceptor copolymer exhibit high power factors of 55.6-61.0 μW m^-1 K^-2 on SAMs with polar terminal groups. These power factors are 49% higher than that on the SAM with the nonpolar terminal group and 3 times higher than that on pristine substrate. The high power factor is ascribed to the modulated charge carrier concentration and improved charge carrier mobility as induced by SAMs.

Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors

Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active π-conjugates in terms of orientation and layer thickness. In this work, we demonstrate self-assembled monolayer field-effect transistors (SAMFETs) composed of phosphonic acid oligomers of 3-hexylthiophene (oligothiophenes-OT) with systematic variations of thiophene repeating units (5, 10, and 20). The devices exhibit stable lateral charge transport with increased mobility as a function of thiophene unit counts. Importantly, our work reveals the packing and intermolecular order of varied-chain-length SAMs at the molecular scale via X-ray reflectivity (XRR) and quantitative X-ray photoelectron spectroscopy (XPS). Short oligomers (OT5-PA and OT10-PA) arrange almost perpendicular to the substrate, forming highly ordered SAMs, whereas the long-chain OT20-PA exhibits a folded structure. By tuning the molecular order in the monolayers via the SAM substitution reaction, the OT20-PA devices show a tripling in mobility.

Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits

The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits. In this study, an efficient strategy to optimize the performance of flexible organic electronics, such as OFETs and complementary inverters, is proposed using a combination of polymer insulators tailored to each OSC type. Photopatternable soluble copolyimides (ScoPIs), which exhibit excellent insulating properties and chemical resistance, are synthesized and applied as gate dielectric layers in the OFETs. The material and electrical properties are systematically investigated by varying the molecular ratio of ScoPIs to determine the optimal conditions for each OFET type. As a result, complementary inverters report 1.67 times higher integration density compared to the conventional ones while maintaining gain, switching threshold, and static noise margin of 23.7 V/V, 22.1 V, and 12.1 V, respectively, at a supply voltage of 40 V. The flexible complementary inverters are successfully demonstrated by fully exploiting the advantages of ScoPIs.

Robust Molecular Dipole-Enabled Defect Passivation and Control of Energy-Level Alignment for High-Efficiency Perovskite Solar Cells

The ability to passivate defects and modulate the interface energy-level alignment (IEA) is key to boost the performance of perovskite solar cells (PSCs). Herein, we report a robust route that simultaneously allows defect passivation and reduced energy difference between perovskite and hole transport layer (HTL) via the judicious placement of polar chlorine-terminated silane molecules at the interface. Density functional theory (DFT) points to effective passivation of the halide vacancies on perovskite surface by the silane chlorine atoms. An integrated experimental and DFT study demonstrates that the dipole layer formed by the silane molecules decreases the perovskite work function, imparting an Ohmic character to the perovskite/HTL contact. The corresponding PSCs manifest a nearly 20 % increase in power conversion efficiency over pristine devices and a markedly enhanced device stability. As such, the use of polar molecules to passivate defects and tailor the IEA in PSCs presents a promising platform to advance the performance of PSCs.

Wafer-Scale and Full-Coverage Two-Dimensional Molecular Monolayers Strained by Solvent Surface Tension Balance

Inspired by the outstanding properties discovered in two-dimensional materials, the bottom-up generation of molecular monolayers is becoming again extremely popular as a route to develop novel functional materials and devices with tailored characteristics and minimal materials consumption. However, achieving a full-coverage over a large-area still represents a grand challenge. Here we report a molecular self-assembly protocol at the water surface in which the monolayers are strained by a novel solvent surface tension balance (SSTB) instead of a physical film balance as in the conventional Langmuir-Blodgett (LB) method. The obtained molecular monolayers can be transferred onto any arbitrary substrate including rigid inorganic oxides and metals, as well as flexible polymeric dielectrics. As a proof-of-concept, their application as ideal modification layers of a dielectric support for high-performance organic field-effect transistors (OFETs) has been demonstrated. The field-effect mobilities of both p- and n-type semiconductors displayed dramatic improvements of 1-3 orders of magnitude on SSTB-derived molecular monolayer, reaching values as high as 6.16 cm² V^-1 s^-1 and 0.68 cm² V^-1 s^-1 for pentacene and PTCDI-C8, respectively. This methodology for the fabrication of wafer-scale and defect-free molecular monolayers holds potential toward the emergence of a new generation of high-performance electronics based on two-dimensional materials.

Enhanced thin-film transistor driven high-aperture in-plane switching liquid crystal displays without common line and black matrix

We developed active-matrix in-plane switching liquid crystal displays (IPS-LCDs) with a new vertical structure composed of thin-film transistors (TFTs) that have an aperture ratio of 60% to reduce energy consumption. The novel TFT has a channel and a back channel made of a hydrogenated amorphous-silicon semiconductor layer sandwiched by thin silicon oxide insulating layers. The transfer characteristics are enhanced by uniformly shifting the threshold voltage to be higher than the maximum LC driving voltage (typically > 5 V). The enhanced TFT characteristics provided with a new driving scheme and shielding electrodes enables both the common line and black matrix to be eliminated. We fabricated an IPS TFT-LCD panel with aperture and contrast ratios that are 160% those of the conventional pixel structure.

Mass-Scalable Molecular Monolayer for Ni-Rich Cathode Powder: Solution for Microcrack Failure in Lithium-Ion Batteries

Ni-rich layered oxide with high reversible capacity, low manufacturing cost, and high potential is recognized as the best practical cathode material for high energy density lithium-ion batteries for affordable electric vehicles. However, they suffer from a poor cycle life owing to internal microcracks, which have been perceived to be due to anisotropic volume changes. Herein, the failure mechanism as well as improved cycle life is demonstrated by a self-assembled molecular monolayer (SAM) on Ni-rich layered oxide powder with a gas-phase precursor of octyltrichlorosilane (OTS), enabling mass-scalable manufacturing. The SAM process with a low heating temperature of 130 °C compared to the commonly used coating is also suitable to the chemically fragile Ni-rich layered oxide. Also, a homogeneous angstrom-level OTS coating is beneficial for preserving the energy density of batteries. In particular, OTS, with electrolyte-phobic functionality, is very effective for mitigating the inherent microcrack failure of the particles by reducing the internal electrolyte decomposition by controlling electrolyte wetting into secondary particles. Systematic surface analyses of the cross section of Ni-rich electrode with the OTS coating found greatly improved particle stability after 100 cycles in comparison with pristine material.

Charge Carrier Mobility Improvement in Diketopyrrolopyrrole Block-Copolymers by Shear Coating

Shear coating is a promising deposition method for upscaling device fabrication and enabling high throughput, and is furthermore suitable for translating to roll-to-roll processing. Although common polymer semiconductors (PSCs) are solution processible, they are still prone to mechanical failure upon stretching, limiting applications in e.g., electronic skin and health monitoring. Progress made towards mechanically compliant PSCs, e.g., the incorporation of soft segments into the polymer backbone, could not only allow such applications, but also benefit advanced fabrication methods, like roll-to-roll printing on flexible substrates, to produce the targeted devices. Tri-block copolymers (TBCs), consisting of an inner rigid semiconducting poly-diketo-pyrrolopyrrole-thienothiophene (PDPP-TT) block flanked by two soft elastomeric poly(dimethylsiloxane) (PDMS) chains, maintain good charge transport properties, while being mechanically soft and flexible. Potentially aiming at the fabrication of TBC-based wearable electronics by means of cost-efficient and scalable deposition methods (e.g., blade-coating), a tolerance of the electrical performance of the TBCs to the shear speed was investigated. Herein, we demonstrate that such TBCs can be deposited at high shear speeds (film formation up to a speed of 10 mm s⁻¹). While such high speeds result in increased film thickness, no degradation of the electrical performance was observed, as was frequently reported for polymer−based OFETs. Instead, high shear speeds even led to a small improvement in the electrical performance: mobility increased from 0.06 cm² V⁻¹ s⁻¹ at 0.5 mm s⁻¹ to 0.16 cm² V⁻¹ s⁻¹ at 7 mm s⁻¹ for the TBC with 24 wt% PDMS, and for the TBC containing 37 wt% PDMS from 0.05 cm² V⁻¹ s⁻¹ at 0.5 mm s⁻¹ to 0.13 cm² V⁻¹ s⁻¹ at 7 mm s⁻¹. Interestingly, the improvement of mobility is not accompanied by any significant changes in morphology.

Revealing molecular conformation-induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation-induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm² and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm²), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.

Enhanced Hydrogen Evolution Reaction in Surface Functionalized MoS2 Monolayers

Monolayered, semiconducting MoS2 and their transition metal dichalcogenides (TMDCs) families are promising and low-cost materials for hydrogen generation through electrolytes (HER, hydrogen evolution reaction) due to their high activities and electrochemical stability during the reaction. However, there is still a lack of understanding in identifying the underlying mechanism responsible for improving the electrocatalytic properties of theses monolayers. In this work, we investigated the significance of controlling carrier densities in a MoS2 monolayer and in turn the corresponding electrocatalytic behaviors in relation to the energy band structure of MoS2. Surface functionalization was employed to achieve p-doping and n-doping in the MoS2 monolayer that led to MoS2 electrochemical devices with different catalytic performances. Specifically, the electron-rich MoS2 surface showed lower overpotential and Tafel slope compared to the MoS2 with surface functional groups that contributed to p-doping. We attributed such enhancement to the increase in the carrier density and the corresponding Fermi level that accelerated HER and charge transfer kinetics. These findings are of high importance in designing electrocatalysts based on two-dimensional TMDCs.

Recent progress in the applications of amino–yne click chemistry

This mini-review summarizes the recent research studies on the application of the amino–yne click reaction in surface immobilization, construction of drug delivery systems, preparation of hydrogel materials and synthesis of functional polymers.

Immobilizing a π-Conjugated Catecholato Framework on Surfaces of SiO2 Insulator Films via a One-Atom Anchor of a Platinum Metal Center to Modulate Organic Transistor Performance

Chemical modification of insulating material surfaces is an important methodology to improve the performance of organic field-effect transistors (OFETs). However, few redox-active self-assembled monolayers (SAMs) have been constructed on gate insulator film surfaces, in contrast to the numerous SAMs formed on many types of conducting electrodes. In this study, we report a new approach to introduce a π-conjugated organic fragment in close proximity to an insulating material surface via a transition metal center acting as a one-atom anchor. On the basis of the reported coordination chemistry of a catecholato complex of Pt(II) in solution, we demonstrate that ligand exchange can occur on an insulating material surface, affording SAMs on the SiO₂ surface derived from a newly synthesized Pt(II) complex containing a benzothienobenzothiophene (BTBT) framework in the catecholato ligand. The resultant SAMs were characterized in detail by water contact angle measurements, X-ray photoelectron spectroscopy, atomic force microscopy, and cyclic voltammetry. The SAMs served as good scaffolds of π-conjugated pillars for forming thin films of a well-known organic semiconductor C8-BTBT (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene), accompanied by the engagements of the C8-BTBT molecules with the SAMs containing the common BTBT framework at the first layer on SiO₂. OFETs containing the SAMs displayed improved performance in terms of hole mobility and onset voltage, presumably because of the unique interfacial structure between the organic semiconducting and inorganic insulating layers. These findings provide important insight into creating new elaborate interfaces through installing coordination chemistry in solution to solid surfaces, as well as OFET design by considering the compatibility between SAMs and organic semiconductors.

Interpenetrating Polymer Semiconductor Nanonetwork Channel for Ultrasensitive, Selective, and Fast Recovered Chemodetection

Organic semiconductor (OSC)-based gas detection has attracted considerable attention due to the facile manufacturing process and effective contact with target chemicals at room temperature. However, OSCs intrinsically suffer from inferior sensing and recovery capability due to lack of functional sites and deep gas penetration into the film. Here, we describe an interpenetrating polymer semiconductor nanonetwork (IPSN) channel possessing unreacted silanol (Si-OH) groups on its surface to overcome bottlenecks that come from OSC-based chemodetection. On the top of the IPSN, moreover, we introduced electron-donating amine (NH₂) groups as a chemical receptor because they strongly interact with the electron-withdrawing nature of NO₂ gas. The NH₂-IPSN-based field-effect transistor exhibited high-performance chemodetection such as ultrasensitivity (990% ppm^-1 at 5 ppm) and excellent NO₂ selectivity against other toxic gases. Impressively, the gas recovery was significantly improved because the NH₂ chemical receptors anchored on the surface of the IPSN suppress deep gas penetration into the film. This work demonstrates that our NO₂ chemodetection is expected to provide inspiration and guideline for realization of practical gas sensors in various industries and daily life.

Immobilization of Ethynyl-π-Extended Electron Acceptors with Amino-Terminated SAMs by Catalyst-Free Click Reaction

Surface modification of SiO₂ using a catalyst-free quantitative reaction between an amine and an ethynyl-π-extended naphthalenediimide was investigated. A post-reaction method, in which the catalyst-free reaction was performed at the surface after the formation of amino-terminated self-assembled monolayers (SAMs), resulted in dense, uniform modification of the SiO₂ surface with the naphthalenediimide molecules. Both X-ray reflectivity and angle-resolved X-ray photoemission spectroscopy showed consistent results for the layer thickness and density. In contrast, a pre-reaction method, in which an amino-silane and the ethynyl-π-extended naphthalenediimide reacted first and then formed a SAM, afforded a sparse SAM on the SiO₂ surface, probably due to the steric hindrance of the naphthalenediimide moieties. The in situ decoration of the SiO₂ surface by a catalyst-free quantitative reaction offers a facile route for modifying surface properties with various π-conjugated molecules suitable for many applications.

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Area-selective deposition (ASD) offers tremendous advantages when compared with conventional patterning processes, such as the possibility of achieving three-dimensional features in a bottom-up additive fashion. Recently, ASD is gaining more and more attention from IC manufacturers and equipment and material suppliers. Through combination of self-assembled monolayer (SAM) surface passivation of the nongrowth substrate area and atomic layer deposition (ALD) on the growth area, ASD selective to the growth area can be achieved. With the purpose of screening SAM precursors to provide optimal passivation performance on SiO₂, various siloxane precursors with different terminal groups and alkyl chains were investigated. Additionally, the surface dependence and growth inhibition of TiN ALD on -NH₂, -CF₃, and -CH₃ terminations is investigated. We demonstrated the methyl termination of the SAM precursor combined with a C18 alkyl chain plays an important role in broadening the ALD selectivity window by suppressing precursor adsorption. Owing to the high surface coverage, excellent thermal stability and longer carbon chain length, an optimized trimethoxy(octadecyl)silane (TMODS) film deposited from liquid phase was able to provide a selectivity higher than 0.99 up to 20 nm ALD film deposited on hydroxyl-terminated Si oxide. The approach followed in this work can allow extending the ASD process window, and it is relevant for a wide variety of applications.

Vertical organic permeable dual-base transistors for logic circuits

The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.

The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently tunable on-currents and threshold voltages.

Highly Stable Artificial Synapse Consisting of Low-Surface Defect van der Waals and Self-Assembled Materials

The long-term plasticity of biological synapses was successfully emulated in an artificial synapse fabricated by combining low-surface defect van der Waals (vdW) and self-assembled (SA) materials. The synaptic operation could be achieved by facilitating hole trapping and releasing only via the amine (NH₂) functional groups in 3-aminopropyltriethoxysilane, which consequently induced a gradual conductance change in the WSe₂ channel. The vdW-SA synaptic device exhibited extremely stable long-term potentiation/depression (LTP/LTD) characteristics; its dynamic range and nonlinearity reproduced near 100 and 3.13/-6.53 (for LTP/LTD) with relative standard deviations (RSDs) below 2%. Furthermore, after conducting training and recognition tasks for the Modified National Institute of Standard and Technology (MNIST) digit patterns, we verified that the maximum recognition rate was 78.3%, and especially, its RSD was as low as 0.32% over several training/recognition cycles. This study provides a background for future research on advanced artificial synapses based on vdW and organic materials.

The Potential of X-ray Photoelectron Spectroscopy for Determining Interface Dipoles of Self-Assembled Monolayers

In the current manuscript we assess to what extent X-ray photoelectron spectroscopy (XPS) is a suitable tool for probing the dipoles formed at interfaces between self-assembled monolayers and metal substrates. To that aim, we perform dispersion-corrected, slab-type band-structure calculations on a number of biphenyl-based systems bonded to an Au(111) surface via different docking groups. In addition to changing the docking chemistry (and the associated interface dipoles), the impacts of polar tail group substituents and varying dipole densities are also investigated. We find that for densely packed monolayers the shifts of the peak positions of the simulated XP spectra are a direct measure for the interface dipoles. In the absence of polar tail group substituents they also directly correlate with adsorption-induced work function changes. At reduced dipole densities this correlation deteriorates, as work function measurements probe the difference between the Fermi level of the substrate and the electrostatic energy far above the interface, while core level shifts are determined by the local electrostatic energy in the region of the atom from which the photoelectron is excited.

Cross-Plane Thermal Conductance of Phosphonate-Based Self-Assembled Monolayers and Self-Assembled Nanodielectrics

Self-assembled nanodielectrics (SANDs) consist of alternating layers of polarized phosphonate-functionalized azastibazolium π-electron (PAE) and high-k dielectric metal oxide (ZrO₂ or HfO_x) films. SANDs are desirable gate dielectrics materials for thin-film transistor applications because of their excellent properties such as low-temperature fabrication, large dielectric strength, and large capacitance. In this paper, we investigate the cross-plane thermal boundary conductance of SANDs using the frequency domain thermoreflectance (FDTR) technique. First, we characterize the thermal conductance of PAE self-assembled monolayers (SAMs), inverted-PAE (IPAE) SAMs, and mixed PAE-IPAE SAMs, sandwiched between thin gold and silica (SiO₂) films at the top and bottom surfaces. Next, we quantify the thermal conductance of SAND-n with different numbers (n) of PAE-ZrO₂ layers and thicknesses ranging between 4.7 and 11.3 nm. From the FDTR measurements, we observe that the thermal boundary conductance of the SAMs can be tuned between 42.1 ± 4.6 MW/(m² K) and 52.4 ± 2.5 MW/(m² K), based on the relative density of the PAE and IPAE chromophores. In the SAND-n samples, we observe a monotonic decrease in the thermal conductance with increasing n. We use the measured thermal conductance data in a series resistance model to estimate a thermal interface conductance of 695 MW/(m² K) for the contact between the PAE chromophore and the zirconium dioxide films, which is an order of magnitude larger than the SAMs. We attribute the improved thermal conductance to stronger adhesion between the PAE chromophore and the zirconium dioxide films, as compared to the weakly bonded SAMs to the gold and silicon dioxide films.

Facile Photo-cross-linking System for Polymeric Gate Dielectric Materials toward Solution-Processed Organic Field-Effect Transistors: Role of a Cross-linker in Various Polymer Types

Energy-efficient solution-processed organic field-effect transistors (OFETs) are highly sought after in the low-cost printing industry as well as for the manufacture of flexible and other next-generation devices. The fabrication of such electronic devices requires high-functioning insulating materials that are chemically and mechanically robust to avoid lowering insulating properties during the device fabrication process or utilization of devices. In this study, we report a facile, fluorinated, UV-assisted cross-linker series using a fluorophenyl azide (FPA), which reacts with the C-H groups of a conventional polymer. This demonstrates the application of the cross-linked films in OFET gate dielectrics. The effects of the cross-linkable chemical structure of the FPA series on the cross-linking chemistry, photopatternability, and dielectric properties of the resulting films are investigated for low/high-k or amorphous/crystalline polymeric gate dielectric materials. The characteristics of insulating layers and behavior of OFETs containing these cross-linked gate dielectrics (for example, leakage current density (J), hysteresis, and charge trap density) depend on the polymer type. Furthermore, an organic-based complementary inverter and various printable OFETs with excellent electrical characteristics are successfully fabricated. Thus, these reported cross-linkers that enable the solution process and patterning of well-developed conventional polymer dielectric materials are promising for the realization of a more sustainable next-generation industrial technology for flexible and printable devices.