1
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Chen M, Liu H, He X, Li M, Tang CS, Sun M, Koirala KP, Bowden ME, Li Y, Liu X, Zhou D, Sun S, Breese MBH, Cai C, Wang L, Du Y, Wee ATS, Yin X. Uncovering an Interfacial Band Resulting from Orbital Hybridization in Nickelate Heterostructures. ACS NANO 2024; 18:27707-27717. [PMID: 39327231 DOI: 10.1021/acsnano.4c09921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
The interaction of atomic orbitals at the interface of perovskite oxide heterostructures has been investigated for its profound impact on the band structures and electronic properties, giving rise to unique electronic states and a variety of tunable functionalities. In this study, we conducted an extensive investigation of the optical and electronic properties of epitaxial NdNiO3 synthesized on a series of single-crystal substrates. Unlike nanofilms synthesized on other substrates, NdNiO3 on SrTiO3 (NNO/STO) gives rise to a unique band structure featuring an additional unoccupied band situated above the Fermi level. Our comprehensive investigation, which incorporated a wide array of experimental techniques and density functional theory calculations, revealed that the emergence of the interfacial band structure is primarily driven by orbital hybridization between the Ti 3d orbitals of the STO substrate and the O 2p orbitals of the NNO thin film. Furthermore, exciton peaks have been detected in the optical spectra of the NNO/STO film, attributable to the pronounced electron-electron (e-e) and electron-hole (e-h) interactions propagating from the STO substrate into the NNO film. These findings underscore the substantial influence of interfacial orbital hybridization on the electronic structure of oxide thin films, thereby offering key insights into tuning their interfacial properties.
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Affiliation(s)
- Mingyao Chen
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Huimin Liu
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Xu He
- Theoretical Materials Physics, Q-MAT, CESAM, Université de Liège, Liège B-4000, Belgium
| | - Minjuan Li
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
| | - Mengxia Sun
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Krishna Prasad Koirala
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Mark E Bowden
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Yangyang Li
- School of Physics, Shandong University, Jinan, Shandong 250100, China
| | - Xiongfang Liu
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Difan Zhou
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Shuo Sun
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Mark B H Breese
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore 117603, Singapore
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore
| | - Chuanbing Cai
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
| | - Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, United States
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research, National University of Singapore, Singapore 117546, Singapore
| | - Xinmao Yin
- Shanghai Key Laboratory of High Temperature Superconductors, Department of Physics, Shanghai University, Shanghai 200444, China
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2
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Jeong SG, Cho SW, Song S, Oh JY, Jeong DG, Han G, Jeong HY, Mohamed AY, Noh WS, Park S, Lee JS, Lee S, Kim YM, Cho DY, Choi WS. Dimensionality Engineering of Magnetic Anisotropy from the Anomalous Hall Effect in Synthetic SrRuO 3 Crystals. NANO LETTERS 2024; 24:7979-7986. [PMID: 38829309 DOI: 10.1021/acs.nanolett.4c01536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here we investigate the impact of dimensionality of epitaxially grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1500% improvement of the coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Affiliation(s)
- Seung Gyo Jeong
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Seong Won Cho
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jin Young Oh
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Do Gyeom Jeong
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Gyeongtak Han
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | | | - Woo-Suk Noh
- cCPM, Max Planck POSTECH/Korea Research Initiative, Pohang 37673, Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Suyoun Lee
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Deok-Yong Cho
- Department of Physics, Jeonbuk National University, Jeonju 54896, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
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3
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Jiang Y, Niu J, Wang C, Xue D, Shi X, Gao W, Zhao S. Experimental demonstration of tunable hybrid improper ferroelectricity in double-perovskite superlattice films. Nat Commun 2024; 15:5549. [PMID: 38956065 PMCID: PMC11219787 DOI: 10.1038/s41467-024-49707-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 06/17/2024] [Indexed: 07/04/2024] Open
Abstract
Hybrid improper ferroelectricity can effectively avoid the intrinsic chemical incompatibility of electronic mechanism for multiferroics. Perovskite superlattices, as theoretically proposed hybrid improper ferroelectrics with simple structure and high technological compatibility, are conducive to device integration and miniaturization, but the experimental realization remains elusive. Here, we report a strain-driven oxygen octahedral distortion strategy for hybrid improper ferroelectricity in La2NiMnO6/La2CoMnO6 double-perovskite superlattices. The epitaxial growth mode with mixed crystalline orientations maintains a large strain transfer distance more than 90 nm in the superlattice films with lattice mismatch less than 1%. Such epitaxial strain permits sustainable long-range modulation of oxygen octahedral rotation and tilting, thereby inducing and regulating hybrid improper ferroelectricity. A robust room-temperature ferroelectricity with remnant polarization of ~ 0.16 μC cm-2 and piezoelectric coefficient of 2.0 pm V-1 is obtained, and the density functional theory calculations and Landau-Ginsburg-Devonshire theory reveal the constitutive correlations between ferroelectricity, octahedral distortions, and strain. This work addresses the gap in experimental studies of hybrid improper ferroelectricity for perovskite superlattices and provides a promising research platform and idea for designing and exploring hybrid improper ferroelectricity.
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Affiliation(s)
- Yaoxiang Jiang
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology & School of Physical Science and Technology, Inner Mongolia University, Hohhot, PR China
| | - Jianguo Niu
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology & School of Physical Science and Technology, Inner Mongolia University, Hohhot, PR China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, China.
| | - Donglai Xue
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology & School of Physical Science and Technology, Inner Mongolia University, Hohhot, PR China
| | - Xiaohui Shi
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology & School of Physical Science and Technology, Inner Mongolia University, Hohhot, PR China
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
| | - Shifeng Zhao
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology & School of Physical Science and Technology, Inner Mongolia University, Hohhot, PR China.
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4
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Sun H, Lordi V, Takamura Y, Samanta A. Unraveling the Correlation between the Interface Structures and Tunable Magnetic Properties of La 1-xSr xCoO 3-δ/La 1-xSr xMnO 3-δ Bilayers Using Deep Learning Models. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30166-30175. [PMID: 38780088 DOI: 10.1021/acsami.3c18773] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Perovskite oxides are gaining significant attention for use in next-generation magnetic and ferroelectric devices due to their exceptional charge transport properties and the opportunity to tune the charge, spin, lattice, and orbital degrees of freedom. Interfaces between perovskite oxides, exemplified by La1-xSrxCoO3-δ/La1-xSrxMnO3-δ (LSCO/LSMO) bilayers, exhibit unconventional magnetic exchange switching behavior, offering a pathway for innovative designs in perovskite oxide-based devices. However, the precise atomic-level stoichiometric compositions and chemophysical properties of these interfaces remain elusive, hindering the establishment of surrogate design principles. We leverage first-principles simulations, evolutionary algorithms, and neural network searches with on-the-fly uncertainty quantification to design deep learning model ensembles to investigate over 50,000 LSCO/LSMO bilayer structures as a function of oxygen deficiency (δ) and strontium concentration (x). Structural analysis of the low-energy interface structures reveals that preferential segregation of oxygen vacancies toward the interfacial La0.7Sr0.3CoO3-δ layers causes distortion of the CoOx polyhedra and the emergence of magnetically active Co2+ ions. At the same time, an increase in the Sr concentration and a decrease in oxygen vacancies in the La0.7Sr0.3MnO3-δ layers tend to retain MnO6 octahedra and promote the formation of Mn4+ ions. Electronic structure analysis reveals that the nonuniform distributions of Sr ions and oxygen vacancies on both sides of the interface can alter the local magnetization at the interface, showing a transition from ferromagnetic (FM) to local antiferromagnetic (AFM) or ferrimagnetic regions. Therefore, the exotic properties of La1-xSrxCoO3-δ/La1-xSrxMnO3-δ are strongly coupled to the presence of hard/soft magnetic layers, as well as the FM to AFM transition at the interface, and can be tuned by changing the Sr concentration and oxygen partial pressure during growth. These insights provide valuable guidance for the precise design of perovskite oxide multilayers, enabling tailoring of their functional properties to meet specific requirements for various device applications.
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Affiliation(s)
- Hong Sun
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Vincenzo Lordi
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
| | - Yayoi Takamura
- Department of Materials Science and Engineering, University of California, Davis, Davis, California 95616, United States
| | - Amit Samanta
- Lawrence Livermore National Laboratory, Livermore, California 94550, United States
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5
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Zheng B, Ji X, Xue M, Jia C, Kang C, Zhang W, Yang J, Tian M, Chen X. Robust room temperature perpendicular magnetic anisotropy and anomalous Hall effect of sputtered NiCo 2O 4film. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:275701. [PMID: 38537304 DOI: 10.1088/1361-648x/ad387b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2024] [Accepted: 03/27/2024] [Indexed: 04/06/2024]
Abstract
Inverse spinel ferrimagnetic NiCo2O4(NCO) exhibits volatile physical properties due to the complex ion/valence occupation, which complicates the study its intrinsic properties. In this work, robust room temperature perpendicular magnetic anisotropy (PMA) is distinctly observed in high-quality RF-sputtered NCO film down to 3 uc (2.4 nm), confirmed by the room temperature anomalous Hall effect. The NCO films show a good metallic conductivity with a dimensional driven metal-insulator transition. The scaling relation between anomalous Hall conductivity (σxy) and the longitudinal conductivity (σxx) reveals the dirty metal behavior in conjunction with the contribution of intrinsic Berry phase or disorder-enhanced electron correlation contribute to the anomalous Hall effect for thick films while the dirty scaling law dominates for the thin films. This work introduces an oxide candidate with robust room temperature PMA as well as massive production ability for the functional spintronic applications.
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Affiliation(s)
- Biao Zheng
- Center of Free Electron Laser & High Magnetic Field, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- School of Materials Science and Engineering, Anhui University, Hefei 230601, People's Republic of China
| | - Xianghao Ji
- School of Materials Science and Engineering, Anhui University, Hefei 230601, People's Republic of China
| | - Mingzhu Xue
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Caihong Jia
- Key Laboratory of Quantum Matter Science, School of Future Technology, Henan University, Zhengzhou 450046, People's Republic of China
| | - Chaoyang Kang
- Key Laboratory of Quantum Matter Science, School of Future Technology, Henan University, Zhengzhou 450046, People's Republic of China
| | - Weifeng Zhang
- Key Laboratory of Quantum Matter Science, School of Future Technology, Henan University, Zhengzhou 450046, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Mingliang Tian
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei 230601, People's Republic of China
| | - Xuegang Chen
- Center of Free Electron Laser & High Magnetic Field, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei 230601, People's Republic of China
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6
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Lu XZ, Zhang HM, Zhou Y, Zhu T, Xiang H, Dong S, Kageyama H, Rondinelli JM. Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials. SCIENCE ADVANCES 2023; 9:eadi0138. [PMID: 37992171 PMCID: PMC10665001 DOI: 10.1126/sciadv.adi0138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 10/23/2023] [Indexed: 11/24/2023]
Abstract
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n = 2 Ruddlesden-Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.
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Affiliation(s)
- Xue-Zeng Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Hui-Min Zhang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Ying Zhou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Tong Zhu
- Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200030, People's Republic of China
| | - Shuai Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People's Republic of China
| | - Hiroshi Kageyama
- Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
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7
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Feng M, Ahlm N, Sasaki DY, Chiu IT, N’Diaye AT, Shafer P, Klewe C, Mehta A, Takamura Y. Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La 2/3Sr 1/3CoO 3/La 2/3Sr 1/3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15. [PMID: 37910813 PMCID: PMC10658449 DOI: 10.1021/acsami.3c10376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2023] [Revised: 09/18/2023] [Accepted: 10/16/2023] [Indexed: 11/03/2023]
Abstract
Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La2/3Sr1/3CoO3 (LSCO) and La2/3Sr1/3MnO3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (tLSCO). The epitaxial LSCO/LSMO bilayers were grown on (110)o-oriented NdGaO3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (∼0.2%) in lattice mismatch between the two in-plane directions, [001]o and [11̅0]o, a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for tLSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001]o direction, and the LSCO layer was characterized by magnetically active Co2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0]o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As tLSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100]o direction, but it gradually rotated to the [11̅0]o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.
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Affiliation(s)
- Mingzhen Feng
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - Nolan Ahlm
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - Dayne Y. Sasaki
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
| | - I-Ting Chiu
- Department
of Chemical Engineering, University of California,
Davis, Davis, California 95616, United States
| | - Alpha T. N’Diaye
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Padraic Shafer
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Christoph Klewe
- Advanced
Light Source, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Apurva Mehta
- Stanford
Synchrotron Radiation Lightsource, SLAC
National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yayoi Takamura
- Department
of Materials Science and Engineering, University
of California, Davis, Davis, California 95616, United States
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8
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Hoang VH, Lee NS, Kim HJ. Strain-induced Mn valence state variation in CaMnO 3-δ/substrate interfaces: electronic reconstruction versus oxygen vacancies. NANOSCALE ADVANCES 2023; 5:3887-3895. [PMID: 37496622 PMCID: PMC10368000 DOI: 10.1039/d3na00206c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 06/26/2023] [Indexed: 07/28/2023]
Abstract
This study investigates the nanoscale crystalline and electronic structures of the interfaces between CaMnO3-δ and substrates such as SrTiO3 (001) and LaAlO3 (001) by employing advanced transmission electron microscopy and electron energy loss spectroscopy techniques. The objective is to comprehend the influence of different strains on the Mn valence state. Our findings reveal that the Mn valence state remains relatively stable in the region of a weakly tensile-strained interface, whereas it experiences a significant decrease from Mn4+ to Mn2.3+ in the region of a strongly tensile-strained interface. Although this reduction in valence appears to be consistent with the electron reconstruction scenario, the observed increase in the out-of-plane lattice constant at the interface implies the accumulation of oxygen vacancies at the interface. Consequently, the present study offers a comprehensive understanding of the intricate relationships among the Mn valence state, local structure, and formation of oxygen vacancies in the context of two distinct strain cases. This knowledge is essential for tailoring the interface properties and guiding future developments in the field of oxide heterostructures.
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Affiliation(s)
- Van-Hien Hoang
- Department of Physics, Graduate School, Daegu University Gyeongbuk 38453 Republic of Korea
| | - Nam-Suk Lee
- National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH) Pohang 37673 Republic of Korea
| | - Heon-Jung Kim
- Department of Physics, Graduate School, Daegu University Gyeongbuk 38453 Republic of Korea
- Department of Materials-Energy Science and Engineering, College of Engineering, Daegu University Gyeongbuk 38453 Republic of Korea
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9
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Han H, Zhang Q, Li W, Liu Y, Guo J, Wang Y, Li Q, Gu L, Nan CW, Ma J. Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial Na 0.5Bi 0.5TiO 3 Thin Films. RESEARCH (WASHINGTON, D.C.) 2023; 6:0191. [PMID: 37465161 PMCID: PMC10351392 DOI: 10.34133/research.0191] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 06/18/2023] [Indexed: 07/20/2023]
Abstract
The oxygen octahedral rotation (OOR) forms fundamental atomic distortions and symmetries in perovskite oxides and definitely determines their properties and functionalities. Therefore, epitaxial strain and interfacial structural coupling engineering have been developed to modulate the OOR patterns and explore novel properties, but it is difficult to distinguish the 2 mechanisms. Here, different symmetries are induced in Na0.5Bi0.5TiO3 (NBT) epitaxial films by interfacial oxygen octahedral coupling rather than epitaxial strain. The NBT film grown on the Nb:SrTiO3 substrate exhibits a paraelectric tetragonal phase, while with La0.5Sr0.5MnO3 as a buffer layer, a monoclinic phase and robust ferroelectricity are obtained, with a remanent polarization of 42 μC cm-2 and a breakdown strength of 7.89 MV cm-1, which are the highest record among NBT-based films. Moreover, the interfacial oxygen octahedral coupling effect is demonstrated to propagate to the entire thickness of the film, suggesting an intriguing long-range effect. This work provides a deep insight into understanding the structure modulation in perovskite heterostructures and an important avenue for achieving unique functionalities.
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Affiliation(s)
- Haojie Han
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yiqun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jiasheng Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yue Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lin Gu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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10
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Li D, Wang H, Li K, Zhu B, Jiang K, Backes D, Veiga LSI, Shi J, Roy P, Xiao M, Chen A, Jia Q, Lee TL, Dhesi SS, Scanlon DO, MacManus-Driscoll JL, van Aken PA, Zhang KHL, Li W. Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO 3 thin films. Nat Commun 2023; 14:3638. [PMID: 37336926 PMCID: PMC10279738 DOI: 10.1038/s41467-023-39369-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Accepted: 06/09/2023] [Indexed: 06/21/2023] Open
Abstract
Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO6 octahedral rotations throughout LaCoO3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO3 films while suggesting potential applications toward low-power spintronic devices.
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Affiliation(s)
- Dong Li
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, 211106, Nanjing, China
| | - Hongguang Wang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Kaifeng Li
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, 211106, Nanjing, China
| | - Bonan Zhu
- Department of Chemistry, University College London, London, WC1H 0AJ, UK.
| | - Kai Jiang
- Department of Materials, East China Normal University, 200241, Shanghai, China.
- School of Arts and Sciences, Shanghai Dianji University, 200240, Shanghai, China.
| | - Dirk Backes
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
| | - Larissa S I Veiga
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
| | - Jueli Shi
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, College of Chemistry and Chemical Engineering, Xiamen University, 361005, Xiamen, China
| | - Pinku Roy
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY, 14260, USA
| | - Ming Xiao
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo-The State University of New York, Buffalo, NY, 14260, USA
| | - Tien-Lin Lee
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
| | - Sarnjeet S Dhesi
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
| | - David O Scanlon
- Department of Chemistry, University College London, London, WC1H 0AJ, UK
- Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE, UK
| | | | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany
| | - Kelvin H L Zhang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, College of Chemistry and Chemical Engineering, Xiamen University, 361005, Xiamen, China.
| | - Weiwei Li
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, 211106, Nanjing, China.
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11
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Fowlie J, Georgescu AB, Suter A, Mundet B, Toulouse C, Jaouen N, Viret M, Domínguez C, Gibert M, Salman Z, Prokscha T, Alexander DTL, Kreisel J, Georges A, Millis AJ, Triscone JM. Metal-insulator transition in composition-tuned nickel oxide films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:304001. [PMID: 37059114 DOI: 10.1088/1361-648x/accd38] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
Thin films of the solid solution Nd1-xLaxNiO3are grown in order to study the expected 0 K phase transitions at a specific composition. We experimentally map out the structural, electronic and magnetic properties as a function ofxand a discontinuous, possibly first order, insulator-metal transition is observed at low temperature whenx= 0.2. Raman spectroscopy and scanning transmission electron microscopy show that this is not associated with a correspondingly discontinuous global structural change. On the other hand, results from density functional theory (DFT) and combined DFT and dynamical mean field theory calculations produce a 0 K first order transition at around this composition. We further estimate the temperature-dependence of the transition from thermodynamic considerations and find that a discontinuous insulator-metal transition can be reproduced theoretically and implies a narrow insulator-metal phase coexistence withx. Finally, muon spin rotation (µSR) measurements suggest that there are non-static magnetic moments in the system that may be understood in the context of the first order nature of the 0 K transition and its associated phase coexistence regime.
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Affiliation(s)
- Jennifer Fowlie
- Department of Applied Physics, Stanford University, Stanford, CA, United States of America
| | - Alexandru B Georgescu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, United States of America
| | - Andreas Suter
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institute, Villigen PSI, Switzerland
| | - Bernat Mundet
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Constance Toulouse
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | | | - Michel Viret
- SPEC, CEA, CNRS, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Claribel Domínguez
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
| | - Marta Gibert
- Solid State Physics Institute, TU Wien, Vienna, Austria
| | - Zaher Salman
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institute, Villigen PSI, Switzerland
| | - Thomas Prokscha
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institute, Villigen PSI, Switzerland
| | - Duncan T L Alexander
- Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Jens Kreisel
- Department of Physics and Materials Science, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux, Luxembourg
| | - Antoine Georges
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, United States of America
- Collège de France, 75005 Paris, France
- Centre de Physique Théorique, Ecole Polytechnique, CNRS, 91128 Palaiseau Cedex, France
| | - Andrew J Millis
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, United States of America
- Department of Physics, Columbia University, New York, NY, United States of America
| | - Jean-Marc Triscone
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
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12
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Chen S, Zhang Q, Li X, Zhao J, Lin S, Jin Q, Hong H, Huon A, Charlton T, Li Q, Yan W, Wang J, Ge C, Wang C, Wang B, Fitzsimmons MR, Guo H, Gu L, Yin W, Jin KJ, Guo EJ. Atomically engineered cobaltite layers for robust ferromagnetism. SCIENCE ADVANCES 2022; 8:eabq3981. [PMID: 36306366 PMCID: PMC9616489 DOI: 10.1126/sciadv.abq3981] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.
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Affiliation(s)
- Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xujing Li
- University of Chinese Academy of Sciences, Beijing 100049, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Jiali Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Amanda Huon
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Department of Mathematics, Physics, and Statistics, University of the Sciences, Philadelphia, PA 19104, USA
| | - Timothy Charlton
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Qian Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Baotian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Michael R. Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA
| | - Haizhong Guo
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Wen Yin
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
| | - Kui-juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
| | - Er Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Corresponding author. (W.Y.); (K.-j.J.); (E.J.G.)
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13
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Qi J, Zhang Y, Liu H, Xu H, Wang C, Hu L, Feng M, Lü W. Strain Modified Oxygen Evolution Reaction Performance in Epitaxial, Freestanding, and Van Der Waals Manganite Thin Films. NANO LETTERS 2022; 22:7066-7072. [PMID: 35976127 DOI: 10.1021/acs.nanolett.2c01966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In perovskite complex oxides, the strain has been established as a promising approach for tuning the oxygen evolution reaction (OER) performance by the manipulated electronic structure and interaction/coupling. In this study, we have employed rigid epitaxial, flexible freestanding, and van der Waals La2/3Sr1/3MnO3 (LSMO) to investigate the strain effects on OER, which are different in stress strength and range via lattice mismatch and curvature change. It was found that the OER performances as a function of strain exhibited volcano and monotonous trends in rigid and flexible LSMO, respectively. The findings suggest that distinguished oxygen activation energy in varied lattice fields also plays a crucial role in the epitaxial LSMO in contrast to the pure strain effect in the flexible LSMO. Our results not only fundamentally clarify the effort of strain but also technologically provide an effective route to engineer the electronic structure for modified OER performance by perovskite complex oxides.
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Affiliation(s)
- Ji Qi
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Yuan Zhang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Huan Liu
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Hang Xu
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Chen Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Linglong Hu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Ming Feng
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Weiming Lü
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
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14
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De Luca G, Spring J, Kaviani M, Jöhr S, Campanini M, Zakharova A, Guillemard C, Herrero-Martin J, Erni R, Piamonteze C, Rossell MD, Aschauer U, Gibert M. Top-Layer Engineering Reshapes Charge Transfer at Polar Oxide Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203071. [PMID: 35841137 DOI: 10.1002/adma.202203071] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 07/12/2022] [Indexed: 06/15/2023]
Abstract
Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded properties in ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. Therefore, developing less-invasive methods to control charge transfer will be beneficial. Here, an appropriate top-interface design allows for remote manipulation of the charge configuration of the buried interface and concurrent restoration of the ferromagnetic trait of the whole film. Double-perovskite insulating ferromagnetic La2 NiMnO6 (LNMO) thin films grown on perovskite oxide substrates are investigated as a model system. An oxygen-vacancy-assisted electronic reconstruction takes place initially at the LNMO polar interfaces. As a result, the magnetic properties of 2-5 unit cell LNMO films are affected beyond dimensionality effects. The introduction of a top electron-acceptor layer redistributes the electron excess and restores the ferromagnetic properties of the ultrathin LNMO films. Such a strategy can be extended to other interfaces and provides an advanced approach to fine-tune the electronic features of complex multilayered heterostructures.
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Affiliation(s)
- Gabriele De Luca
- Department of Physics, University of Zurich, Winterthurerstrasse 190, Zurich, 8057, Switzerland
| | - Jonathan Spring
- Department of Physics, University of Zurich, Winterthurerstrasse 190, Zurich, 8057, Switzerland
| | - Moloud Kaviani
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, Bern, 3012, Switzerland
| | - Simon Jöhr
- Department of Physics, University of Zurich, Winterthurerstrasse 190, Zurich, 8057, Switzerland
| | - Marco Campanini
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Anna Zakharova
- Swiss Light Source, Paul Scherrer Institut, Villigen, 5232, Switzerland
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, Cerdanyola del Vallès, 08290, Spain
| | - Javier Herrero-Martin
- ALBA Synchrotron Light Source, Carrer de la Llum 2-26, Cerdanyola del Vallès, 08290, Spain
| | - Rolf Erni
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | | | - Marta D Rossell
- Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Ulrich Aschauer
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, Bern, 3012, Switzerland
| | - Marta Gibert
- Department of Physics, University of Zurich, Winterthurerstrasse 190, Zurich, 8057, Switzerland
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15
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Chen Y, Yuan X, Shan S, Zhang C, Liu R, Zhang X, Zhuang W, Chen Y, Xu Y, Zhang R, Wang X. Significant Reduction of the Dead Layers by the Strain Release in La 0.7Sr 0.3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39673-39678. [PMID: 35984645 DOI: 10.1021/acsami.2c12899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La0.7Sr0.3MnO3 (LSMO) grown on LaAlO3 (LAO) substrates, via strain engineering by inserting a Sr3Al2O6 buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.
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Affiliation(s)
- Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xiao Yuan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Siqi Shan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
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16
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Choi E, Sim KI, Burch KS, Lee YH. Emergent Multifunctional Magnetic Proximity in van der Waals Layered Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200186. [PMID: 35596612 PMCID: PMC9313546 DOI: 10.1002/advs.202200186] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Revised: 04/01/2022] [Indexed: 05/10/2023]
Abstract
Proximity effect, which is the coupling between distinct order parameters across interfaces of heterostructures, has attracted immense interest owing to the customizable multifunctionalities of diverse 3D materials. This facilitates various physical phenomena, such as spin order, charge transfer, spin torque, spin density wave, spin current, skyrmions, and Majorana fermions. These exotic physics play important roles for future spintronic applications. Nevertheless, several fundamental challenges remain for effective applications: unavoidable disorder and lattice mismatch limits in the growth process, short characteristic length of proximity, magnetic fluctuation in ultrathin films, and relatively weak spin-orbit coupling (SOC). Meanwhile, the extensive library of atomically thin, 2D van der Waals (vdW) layered materials, with unique characteristics such as strong SOC, magnetic anisotropy, and ultraclean surfaces, offers many opportunities to tailor versatile and more effective functionalities through proximity effects. Here, this paper focuses on magnetic proximity, i.e., proximitized magnetism and reviews the engineering of magnetism-related functionalities in 2D vdW layered heterostructures for next-generation electronic and spintronic devices. The essential factors of magnetism and interfacial engineering induced by magnetic layers are studied. The current limitations and future challenges associated with magnetic proximity-related physics phenomena in 2D heterostructures are further discussed.
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Affiliation(s)
- Eun‐Mi Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kyung Ik Sim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Kenneth S. Burch
- Department of PhysicsBoston College140 Commonwealth AveChestnut HillMA02467‐3804USA
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
- Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea
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17
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Niu X, Chen BB, Zhong N, Xiang PH, Duan CG. Topological Hall effect in SrRuO 3thin films and heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:244001. [PMID: 35325882 DOI: 10.1088/1361-648x/ac60d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.
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Affiliation(s)
- Xu Niu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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18
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Liu H, Qi J, Xu H, Li J, Wang F, Zhang Y, Feng M, Lü W. Ambipolar Enhanced Oxygen Evolution Reaction in Flexible van der Waals LaNiO 3 Membrane. ACS Catal 2022. [DOI: 10.1021/acscatal.2c00265] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Huan Liu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Ji Qi
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Hang Xu
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Jiaming Li
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
| | - Fujun Wang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
| | - Yuan Zhang
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
| | - Ming Feng
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education Jilin Normal University, Changchun 130103, China
| | - Weiming Lü
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
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19
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Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films. NANOMATERIALS 2022; 12:nano12050835. [PMID: 35269323 PMCID: PMC8912649 DOI: 10.3390/nano12050835] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Accepted: 02/24/2022] [Indexed: 11/16/2022]
Abstract
Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.
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20
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Kim YJ, Lee C, Park HS, Yeo Y, Safarina GA, Le DD, Kim JG, Bang D, Cho BG, Park JH, Ko KT, Koo TY, Shim JH, Yang CH. Orbital Order Melting at Reduced Dimensions. NANO LETTERS 2022; 22:1059-1066. [PMID: 35084865 DOI: 10.1021/acs.nanolett.1c04117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The orbital degree of freedom, strongly coupled with the lattice and spin, is an important factor when designing correlated functions. Whether the long-range orbital order is stable at reduced dimensions and, if not, what the critical thickness is remains a tantalizing question. Here, we report the melting of orbital ordering, observed by controlling the dimensionality of the canonical eg1 orbital system LaMnO3. Epitaxial films are synthesized with vertically aligned orbital ordering planes on an orthorhombic substrate, so that reducing film thickness changes the two-dimensional planes into quasi-one-dimensional nanostrips. The orbital order appears to be suppressed below the critical thickness of about six unit cells by changing the characteristic phonon modes and making the Mn d orbital more isotropic. Density functional calculations reveal that the electronic energy instability induced by bandwidth narrowing via the dimensional crossover and the interfacial effect causes the absence of orbital order in the ultrathin thickness.
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Affiliation(s)
- Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changhoon Lee
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Giovanni Annur Safarina
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jeong-Gyu Kim
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Daehyeon Bang
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Byeong-Gwan Cho
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Jae-Hoon Park
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Kyung-Tae Ko
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
- Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Tae Yeong Koo
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Ji Hoon Shim
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
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21
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Sando D. Strain and orientation engineering in ABO 3perovskite oxide thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:153001. [PMID: 35042194 DOI: 10.1088/1361-648x/ac4c61] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Accepted: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Perovskite oxides with chemical formula ABO3are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.
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Affiliation(s)
- Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington, 2052, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies (FLEET), UNSW Sydney, Kensington, 2052, Australia
- Mark Wainwright Analytical Centre, UNSW Sydney, Kensington, 2052, Australia
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22
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Jin Q, Wang Z, Zhang Q, Yu Y, Lin S, Chen S, Qi M, Bai H, Huon A, Li Q, Wang L, Yin X, Tang CS, Wee ATS, Meng F, Zhao J, Wang JO, Guo H, Ge C, Wang C, Yan W, Zhu T, Gu L, Chambers SA, Das S, Charlton T, Fitzsimmons MR, Liu GQ, Wang S, Jin KJ, Yang H, Guo EJ. Room-Temperature Ferromagnetism at an Oxide-Nitride Interface. PHYSICAL REVIEW LETTERS 2022; 128:017202. [PMID: 35061447 DOI: 10.1103/physrevlett.128.017202] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 10/28/2021] [Accepted: 12/01/2021] [Indexed: 05/28/2023]
Abstract
Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of the Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via heteroanions has not been explored and the associated quantum states are unknown. Here, we report the successful epitaxial synthesis and characterization of chromium oxide (Cr_{2}O_{3})-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr^{3+} ions via anion-hybridization across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.
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Affiliation(s)
- Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiwen Wang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yonghong Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingqun Qi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Amanda Huon
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Qian Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, USA
| | - Xinmao Yin
- Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Fanqi Meng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiali Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Ou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Haizhong Guo
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Scott A Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354, USA
| | - Sujit Das
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Timothy Charlton
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Michael R Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Gang-Qin Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Shanmin Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Hongxin Yang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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23
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Zhao Y, Li Y, Chen C, Dong G, Zhu S, Zhao Y, Tian B, Jiang Z, Zhou Z, Shi K, Liu M, Pan J. Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La 0.7Sr 0.3MnO 3(111) Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:59511-59517. [PMID: 34859661 DOI: 10.1021/acsami.1c18136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
La0.7Sr0.3MnO3 (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.
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Affiliation(s)
- Yanan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yaojin Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chen Chen
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shukai Zhu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yifan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bian Tian
- State Key Laboratory for Manufacturing Systems Engineering, Collaborative Innovation Center of High-End Manufacturing Equipment, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, Collaborative Innovation Center of High-End Manufacturing Equipment, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Keqing Shi
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingye Pan
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, China
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24
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Thoutam LR, Truttmann TK, Rajapitamahuni AK, Jalan B. Hysteretic Magnetoresistance in a Non-Magnetic SrSnO 3 Film via Thermal Coupling to Dynamic Substrate Behavior. NANO LETTERS 2021; 21:10006-10011. [PMID: 34807629 DOI: 10.1021/acs.nanolett.1c03653] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide films and heterostructures. Here, magnetotransport is investigated in a nonmagnetic La-doped SrSnO3 film. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ∼±3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeding 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistance measurements, we illustrate the origin of hysteresis is not due to magnetism in the film but rather is associated with the magnetocaloric effect of the substrate. Given GdScO3 and similar substrates are commonly used, this work highlights the importance of thermal coupling to processes in the substrates which must be carefully accounted for in the data interpretation for heterostructures utilizing these substrates.
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Affiliation(s)
- Laxman Raju Thoutam
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Tristan K Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Anil Kumar Rajapitamahuni
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota - Twin Cities, Minneapolis, Minnesota 55455, United States
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25
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Rajak P, Knez D, Chaluvadi SK, Orgiani P, Rossi G, Méchin L, Ciancio R. Evidence of Mn-Ion Structural Displacements Correlated with Oxygen Vacancies in La 0.7Sr 0.3MnO 3 Interfacial Dead Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:55666-55675. [PMID: 34758616 DOI: 10.1021/acsami.1c15599] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The properties of half-metallic manganite thin films depend on the composition and structure in the atomic scale, and consequently, their potential functional behavior can only be based on fine structure characterization. By combining advanced transmission electron microscopy, electron energy loss spectroscopy, density functional theory calculations, and multislice image simulations, we obtained evidence of a 7 nm-thick interface layer in La0.7Sr0.3MnO3 (LSMO) thin films, compatible with the formation of well-known dead layers in manganites, with an elongated out-of-plane lattice parameter and structural and electronic properties well distinguished from the bulk of the film. We observed, for the first time, a structural shift of Mn ions coupled with oxygen vacancies and a reduced Mn valence state within such layer. Understanding the correlation between oxygen vacancies, the Mn oxidation state, and Mn-ion displacements is a prerequisite to engineer the magnetotransport properties of LSMO thin films.
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Affiliation(s)
- Piu Rajak
- Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, km 163.5, 34149 Trieste, Italy
| | - Daniel Knez
- Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria
| | - Sandeep Kumar Chaluvadi
- Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, km 163.5, 34149 Trieste, Italy
| | - Pasquale Orgiani
- Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, km 163.5, 34149 Trieste, Italy
- CNR-SPIN, UOS Salerno, 84084 Fisciano, Salerno, Italy
| | - Giorgio Rossi
- Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, km 163.5, 34149 Trieste, Italy
- Dipartimento di Fisica, Università degli Studi di Milano, Via Celoria 16, 20133 Milano, Italy
| | - Laurence Méchin
- Normandie University, UNICAEN, ENSICAEN, CNRS, GREYC, 14000 Caen, France
| | - Regina Ciancio
- Istituto Officina dei Materiali-CNR, Area Science Park, S.S.14, km 163.5, 34149 Trieste, Italy
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26
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In-plane quasi-single-domain BaTiO 3 via interfacial symmetry engineering. Nat Commun 2021; 12:6784. [PMID: 34811372 PMCID: PMC8608839 DOI: 10.1038/s41467-021-26660-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 10/19/2021] [Indexed: 11/08/2022] Open
Abstract
The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
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27
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Lee J, Kim GY, Jeong S, Yang M, Kim JW, Cho BG, Choi Y, Kim S, Choi JS, Lee TK, Kim J, Lee DR, Chang SH, Park S, Jung JH, Bark CW, Koo TY, Ryan PJ, Ihm K, Kim S, Choi SY, Kim TH, Lee S. Template Engineering of Metal-to-Insulator Transitions in Epitaxial Bilayer Nickelate Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54466-54475. [PMID: 34739229 DOI: 10.1021/acsami.1c13675] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding metal-to-insulator phase transitions in solids has been a keystone not only for discovering novel physical phenomena in condensed matter physics but also for achieving scientific breakthroughs in materials science. In this work, we demonstrate that the transport properties (i.e., resistivity and transition temperature) in the metal-to-insulator transitions of perovskite nickelates are tunable via the epitaxial heterojunctions of LaNiO3 and NdNiO3 thin films. A mismatch in the oxygen coordination environment and interfacial octahedral coupling at the oxide heterointerface allows us to realize an exotic phase that is unattainable in the parent compound. With oxygen vacancy formation for strain accommodation, the topmost LaNiO3 layer in LaNiO3/NdNiO3 bilayer thin films is structurally engineered and it electrically undergoes a metal-to-insulator transition that does not appear in metallic LaNiO3. Modification of the NdNiO3 template layer thickness provides an additional knob for tailoring the tilting angles of corner-connected NiO6 octahedra and the linked transport characteristics further. Our approaches can be harnessed to tune physical properties in complex oxides and to realize exotic physical phenomena through oxide thin-film heterostructuring.
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Affiliation(s)
- Jongmin Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Seyeop Jeong
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Mihyun Yang
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Jong-Woo Kim
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Byeong-Gwan Cho
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Yongseong Choi
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Sangmo Kim
- Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Jin San Choi
- Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea
| | - Tae Kwon Lee
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Dong Ryeol Lee
- Department of Physics, Soongsil University, Seoul 06978, Republic of Korea
| | - Seo Hyoung Chang
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Republic of Korea
| | - Jong Hoon Jung
- Department of Physics, Inha University, Incheon 22212, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Tae-Young Koo
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Philip J Ryan
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Kyuwook Ihm
- Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
| | - Sanghoon Kim
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Tae Heon Kim
- Department of Physics, University of Ulsan and Energy Harvest-Storage Research Center (EHSRC), Ulsan 44610, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
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Zhang Y, Yu R, Zhu J. Displacement separation analysis from atomic-resolution images. Ultramicroscopy 2021; 232:113404. [PMID: 34656896 DOI: 10.1016/j.ultramic.2021.113404] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 09/26/2021] [Accepted: 10/03/2021] [Indexed: 11/16/2022]
Abstract
Structural distortions frequently occur in materials, either periodically (ferroelectric or antiferroelectric) or in local areas (domain boundaries, surfaces/interfaces, dislocations). Measuring atomic displacements from an average lattice is of crucial importance for analyzing structural distortions and their connections to physical properties. Conventionally, the displacements are measured atom-by-atom by fitting atomic-resolution images with two-dimensional gaussian functions. Here, we exhibit an efficient method, named Displacement Separation Analysis, DSA in short, to directly separate atomic displacements from an average lattice based on Fourier space filtering. Using antiferroelectric AgNbO3 as a model system, we demonstrate the consistence between DSA and gaussian fitting. The suppression of polarization at interfacial region of h-LuFeO3/α-Al2O3 heterostructure and the emergence of modulation structure in LuFe2O4+x is then revealed using DSA, attesting the implication of DSA in unveiling structural distortions either locally or periodically. Inspired by the simple principle of DSA, such method can be used for any atomic-resolution images, including TEM, STM, and AFM images to exhibit the atomic displacement intuitively.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China; Ji Hua Laboratory, Foshan, 528299, P.R. China; State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
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29
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Resonant Soft X-ray Reflectivity in the Study of Magnetic Properties of Low-Dimensional Systems. MAGNETOCHEMISTRY 2021. [DOI: 10.3390/magnetochemistry7100136] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this review, the technique of resonant soft X-ray reflectivity in the study of magnetic low-dimensional systems is discussed. This technique is particularly appealing in the study of magnetization at buried interfaces and to discriminate single elemental contributions to magnetism, even when this is ascribed to few atoms. The major fields of application are described, including magnetic proximity effects, thin films of transition metals and related oxides, and exchange-bias systems. The fundamental theoretical background leading to dichroism effects in reflectivity is also briefly outlined.
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30
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Zhang Y, Liu J, Dong Y, Wu S, Zhang J, Wang J, Lu J, Rückriegel A, Wang H, Duine R, Yu H, Luo Z, Shen K, Zhang J. Strain-Driven Dzyaloshinskii-Moriya Interaction for Room-Temperature Magnetic Skyrmions. PHYSICAL REVIEW LETTERS 2021; 127:117204. [PMID: 34558947 DOI: 10.1103/physrevlett.127.117204] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Revised: 08/12/2021] [Accepted: 08/13/2021] [Indexed: 06/13/2023]
Abstract
Dzyaloshinskii-Moriya interaction in magnets, which is usually derived from inversion symmetry breaking at interfaces or in noncentrosymmetric crystals, plays a vital role in chiral spintronics. Here we report that an emergent Dzyaloshinskii-Moriya interaction can be achieved in a centrosymmetric material, La_{0.67}Sr_{0.33}MnO_{3}, by a graded strain. This strain-driven Dzyaloshinskii-Moriya interaction not only exhibits distinctive two coexisting nonreciprocities of spin-wave propagation in one system, but also brings about a robust room-temperature magnetic skyrmion lattice as well as a spiral lattice at zero magnetic field. Our results demonstrate the feasibility of investigating chiral spintronics in a large category of centrosymmetric magnetic materials.
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Affiliation(s)
- Yuelin Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jie Liu
- Department of Physics, Beijing Normal University, Beijing 100875, China
- The Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100191, China
| | - Yongqi Dong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shizhe Wu
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jianyu Zhang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Jie Wang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jingdi Lu
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Andreas Rückriegel
- Institute for Theoretical Physics and Center for Extreme Matter and Emergent Phenomena, Utrecht University, Leuvenlaan 4, 3584 CE Utrecht, Netherlands
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Hanchen Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Rembert Duine
- Institute for Theoretical Physics and Center for Extreme Matter and Emergent Phenomena, Utrecht University, Leuvenlaan 4, 3584 CE Utrecht, Netherlands
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Haiming Yu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ka Shen
- Department of Physics, Beijing Normal University, Beijing 100875, China
- The Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100191, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
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31
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Zhang Y, Si W, Jia Y, Yu P, Yu R, Zhu J. Controlling Strain Relaxation by Interface Design in Highly Lattice-Mismatched Heterostructure. NANO LETTERS 2021; 21:6867-6874. [PMID: 34382816 DOI: 10.1021/acs.nanolett.1c01938] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
- Ji Hua Laboratory, Foshan 528299, P.R. China
| | - Wenlong Si
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
| | - Yanli Jia
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P.R. China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
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32
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Yang M, Jin K, Yao H, Zhang Q, Ji Y, Gu L, Ren W, Zhao J, Wang J, Guo E, Ge C, Wang C, Xu X, Wu Q, Yang G. Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100177. [PMID: 34258162 PMCID: PMC8261492 DOI: 10.1002/advs.202100177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 02/25/2021] [Indexed: 06/13/2023]
Abstract
A variety of emergent phenomena are enabled by interface engineering in the complex oxides heterostructures. While extensive attention is attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however, controversial. Here, it is reported that the ferromagnetism in two and five unit cells thick LMO films epitaxially deposited on (001)-SrTiO3 substrates, a ferromagnetic/ferromagnetic coupling in eight and ten unit cells ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20 unit cells ones are observed. This novel phenomenon in both 15 and 20 unit cells films indicates a coexistence of three magnetic orderings in a single LMO film. The high-resolution scanning transmission electron microscopy suggests a P21/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO6 octahedral morphology, corresponding to different magnetic orderings. These results can shed some new lights on manipulating the functionality of oxides by interface engineering.
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Affiliation(s)
- Mingwei Yang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Kuijuan Jin
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Hongbao Yao
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Qinghua Zhang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
| | - Yiru Ji
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Lin Gu
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Wenning Ren
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Jiali Zhao
- Beijing Synchrotron Radiation FacilityInstitute of High Energy PhysicsChinese Academy of SciencesBeijing100039China
| | - Jiaou Wang
- Beijing Synchrotron Radiation FacilityInstitute of High Energy PhysicsChinese Academy of SciencesBeijing100039China
| | - Er‐Jia Guo
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Chen Ge
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Can Wang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Xiulai Xu
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Qiong Wu
- International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Guozhen Yang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
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33
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Beiranvand A, Liedke MO, Haalisto C, Lähteenlahti V, Schulman A, Granroth S, Palonen H, Butterling M, Wagner A, Huhtinen H, Paturi P. Tuned AFM-FM coupling by the formation of vacancy complex in Gd 0.6Ca 0.4MnO 3thin film lattice. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:255803. [PMID: 33878744 DOI: 10.1088/1361-648x/abf9ba] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2021] [Accepted: 04/20/2021] [Indexed: 06/12/2023]
Abstract
The effect ofin situoxygen and vacuum annealings on the low bandwidth manganite Gd1-xCaxMnO3(GCMO) thin film withx= 0.4 was investigated. Based on the magnetic measurements, the AFM-FM coupling is suppressed by the vacuum annealing treatment via destroying the double exchange interaction and increasing the unit cell volume by converting the Mn4+to the Mn3+. Consequently, resistance increases significantly compared to pristine film. The results are explained by a model obtained from the positron annihilation studies, where the vacuum annealing increased the annihilation lifetime in A and B sites due to the formation of vacancy complexesVA,B-VO, which was not the case in the pristine sample. The positron annihilation analysis indicated that most of the open volume defects have been detected in the interface region rather than on the subsurface layer and this result is confirmed by detailed x-ray reflection analysis. On the other hand, the effect of oxygen annealing on the unit cell volume and magnetization was insignificant. This is in agreement with positron annihilation results which demonstrated that the introduction of oxygen does not change the number of cation vacancies significantly. This work demonstrates that the modification of oxygen vacancies and vacancy complexes can tune magnetic and electronic structure of the epitaxial thin films to provide new functionalities in future applications.
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Affiliation(s)
- A Beiranvand
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - M O Liedke
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - C Haalisto
- Laboratory of Materials Science, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - V Lähteenlahti
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - A Schulman
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - S Granroth
- Laboratory of Materials Science, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - H Palonen
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - M Butterling
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - A Wagner
- Helmholtz-Zentrum Dresden-Rossendorf, Institute of Radiation Physics, Bautzner Landstraße 400, 01328 Dresden, Germany
| | - H Huhtinen
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - P Paturi
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
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Zhang K, Zhernenkov K, Saerbeck T, Glavic A, Qu L, Kinane CJ, Caruana AJ, Hua E, Gao G, Jin F, Ge B, Cheng F, Pütter S, Koutsioubas A, Mattauch S, Brueckel T, Su Y, Wang L, Wu W. Soliton-Mediated Magnetic Reversal in an All-Oxide-Based Synthetic Antiferromagnetic Superlattice. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20788-20795. [PMID: 33877796 DOI: 10.1021/acsami.1c02506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
All-oxide-based synthetic antiferromagnets (SAFs) are attracting intense research interest due to their superior tunability and great potentials for antiferromagnetic spintronic devices. In this work, using the La2/3Ca1/3MnO3/CaRu1/2Ti1/2O3 (LCMO/CRTO) superlattice as a model SAF, we investigated the layer-resolved magnetic reversal mechanism by polarized neutron reflectivity. We found that the reversal of LCMO layer moments is mediated by nucleation, expansion, and shrinkage of a magnetic soliton. This unique magnetic reversal process creates a reversed magnetic configuration of the SAF after a simple field cycling. Therefore, it can enable vertical data transfer from the bottom to the top of the superlattice. The physical origin of this intriguing magnetic reversal process could be attributed to the cooperation of the surface spin-flop effect and enhanced uniaxial magnetic anisotropy of the bottom LCMO layer. This work may pave a way to utilize all-oxide-based SAFs for three-dimensional spintronic devices with vertical data transfer and high-density data storage.
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Affiliation(s)
- Kexuan Zhang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Kirill Zhernenkov
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Thomas Saerbeck
- Institut Laue-Langevin, 71 Avenue des Martyrs, CS 20156, 38042 Grenoble Cedex 9, France
| | - Artur Glavic
- Laboratory for Neutron and Muon Instrumentation, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
| | - Lili Qu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Christy J Kinane
- ISIS Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX, United Kingdom
| | - Andrew J Caruana
- ISIS Neutron and Muon Source, Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX, United Kingdom
| | - Enda Hua
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Guanyin Gao
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Jin
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Binghui Ge
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Feng Cheng
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Sabine Pütter
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Alexandros Koutsioubas
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Stefan Mattauch
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Thomas Brueckel
- Jülich Centre for Neutron Science (JCNS-2) and Peter Grünberg Institute (PGI-4), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Yixi Su
- Jülich Centre for Neutron Science JCNS at Heinz Maier-Leibnitz Zentrum, Forschungszentrum Jülich, Lichtenbergstr. 1, D-85747 Garching, Germany
| | - Lingfei Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Wenbin Wu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei 230031, China
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35
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Wu Z, Boselli M, Li D, Fête A, Gibert M, Viret M, Gariglio S. Large Tuning of Electroresistance in an Electromagnetic Device Structure Based on the Ferromagnetic-Piezoelectric Interface. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18984-18990. [PMID: 33851825 DOI: 10.1021/acsami.1c00085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The electrical control of the conducting state through phase transition and/or resistivity switching in heterostructures of strongly correlated oxides is at the core of the large on-going research activity of fundamental and applied interest. In an electromechanical device made of a ferromagnetic-piezoelectric heterostructure, we observe an anomalous negative electroresistance of ∼-282% and a significant tuning of the metal-to-insulator transition temperature when an electric field is applied across the piezoelectric. Supported by finite-element simulations, we identify the electric field applied along the conducting bridge of the device as the plausible origin: stretching the underlying piezoelectric substrate gives rise to a lattice distortion of the ferromagnetic manganite overlayer through epitaxial strain. Large modulations of the resistance are also observed by applying static dc voltages across the thickness of the piezoelectric substrate. These results indicate that the emergent electronic phase separation in the manganites can be selectively manipulated when interfacing with a piezoelectric material, which offers great opportunities in designing oxide-based electromechanical devices.
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Affiliation(s)
- Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Margherita Boselli
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Danfeng Li
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Alexandre Fête
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Marta Gibert
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
| | - Michel Viret
- SPEC, CEA Saclay, CNRS, Université Paris-Saclay, 91191 Gif sur Yvette, France
| | - Stefano Gariglio
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland
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36
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Xu K, Gu Y, Song C, Zhong X, Zhu J. Atomic insight into spin, charge and lattice modulations at SrFeO 3-x/SrTiO 3 interfaces. NANOSCALE 2021; 13:6066-6075. [PMID: 33616142 DOI: 10.1039/d0nr07697j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Novel phenomena and functionalities at interfaces of oxide heterostructures are currently of great interest in a wide range of applications. At such interfaces, charge, spin, orbital and lattice ordering coexist and correlate closely, contributing to rich functional responses. By using atomically resolved imaging and spectroscopy techniques, we investigated magnetic behaviors and structural modulation at the SrFeO3-x/SrTiO3 interface. Fe/Ti element intermixing and oxygen vacancies occurred across a few unit cells at the interface. Furthermore, antiferromagnetic spin ordering of Fe with different valence states in the interface of SrFeO3-x/SrTiO3 induced uncompensated magnetic moments. Compared to the SrFeO3-x/La0.3Sr0.7Al0.65Ta0.35O3 heterojunction, the variations of charge and lattice order parameters at the SrFeO3-x/SrTiO3 interfaces were also determined by advanced electron microscopy, which provided a good understanding of the physical origin of disparate macroscopic magnetic properties, further investigated by magnetometer measurements and X-ray magnetic circular dichroism (XMCD) spectra. These studies provide comprehensive insight into the interfacial modulation of ferrite oxide, which may be useful for designing future devices in oxide electronics.
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Affiliation(s)
- Kun Xu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
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37
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Yao L, Inkinen S, Komsa HP, van Dijken S. Structural Phase Transitions to 2D and 3D Oxygen Vacancy Patterns in a Perovskite Film Induced by Electrical and Mechanical Nanoprobing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006273. [PMID: 33590636 DOI: 10.1002/smll.202006273] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 01/12/2021] [Indexed: 06/12/2023]
Abstract
Oxygen vacancy migration and ordering in perovskite oxides enable manipulation of material properties through changes in the cation oxidation state and the crystal lattice. In thin-films, oxygen vacancies conventionally order into equally spaced planes. Here, it is shown that the planar 2D symmetry is broken if a mechanical nanoprobe restricts the chemical lattice expansion that the vacancies generate. Using in situ scanning transmission electron microscopy, a transition from a perovskite structure to a 3D vacancy-ordered phase in an epitaxial La2/3 Sr1/3 MnO3- δ film during voltage pulsing under local mechanical straining is imaged. The never-before-seen ordering pattern consists of a complex network of distorted oxygen tetrahedra, pentahedra, and octahedra that, together, produce a corrugated atomic structure with lattice constants varying between 3.5 and 4.6 Å. The giant lattice distortions respond sensitively to strain variations, offering prospects for non-volatile nanoscale physical property control driven by voltage and gated by strain.
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Affiliation(s)
- Lide Yao
- NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, Aalto, FI-00076, Finland
| | - Sampo Inkinen
- NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, Aalto, FI-00076, Finland
| | - Hannu-Pekka Komsa
- Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, Aalto, FI-00076, Finland
- Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, FI-90014, Finland
| | - Sebastiaan van Dijken
- NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, Aalto, FI-00076, Finland
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38
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Chen B, Gauquelin N, Green RJ, Lee JH, Piamonteze C, Spreitzer M, Jannis D, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Spatially Controlled Octahedral Rotations and Metal-Insulator Transitions in Nickelate Superlattices. NANO LETTERS 2021; 21:1295-1302. [PMID: 33470113 PMCID: PMC7883389 DOI: 10.1021/acs.nanolett.0c03850] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
The properties of correlated oxides can be manipulated by forming short-period superlattices since the layer thicknesses are comparable with the typical length scales of the involved correlations and interface effects. Herein, we studied the metal-insulator transitions (MITs) in tetragonal NdNiO3/SrTiO3 superlattices by controlling the NdNiO3 layer thickness, n in the unit cell, spanning the length scale of the interfacial octahedral coupling. Scanning transmission electron microscopy reveals a crossover from a modulated octahedral superstructure at n = 8 to a uniform nontilt pattern at n = 4, accompanied by a drastically weakened insulating ground state. Upon further reducing n the predominant dimensionality effect continuously raises the MIT temperature, while leaving the antiferromagnetic transition temperature unaltered down to n = 2. Remarkably, the MIT can be enhanced by imposing a sufficiently large strain even with strongly suppressed octahedral rotations. Our results demonstrate the relevance for the control of oxide functionalities at reduced dimensions.
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Affiliation(s)
- Binbin Chen
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
| | - Nicolas Gauquelin
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, 2020 Antwerp, Belgium
| | - Robert J. Green
- Department
of Physics and Engineering Physics, University
of Saskatchewan, 116 Science Place, Saskatoon, Saskatchewan S7N 5E2, Canada
- Stewart
Blusson Quantum Matter Institute, University
of British Columbia, 111-2355 E Mall, Vancouver, British Columbia V6T 1Z4, Canada
| | - Jin Hong Lee
- Unité
Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Université Paris-Saclay, 91767 Palaiseau, France
| | - Cinthia Piamonteze
- Swiss Light
Source, Paul Scherrer Institute, PSI, 5232 Villigen, Switzerland
| | - Matjaž Spreitzer
- Advanced
Materials Department, Jožef Stefan
Institute, 1000 Ljubljana, Slovenia
| | - Daen Jannis
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, 2020 Antwerp, Belgium
| | - Johan Verbeeck
- Electron
Microscopy for Materials Science (EMAT), University of Antwerp, 2020 Antwerp, Belgium
| | - Manuel Bibes
- Unité
Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Université Paris-Saclay, 91767 Palaiseau, France
| | - Mark Huijben
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
| | - Guus Rijnders
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
| | - Gertjan Koster
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
- (G.K.)
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39
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Lim ZS, Li C, Huang Z, Chi X, Zhou J, Zeng S, Omar GJ, Feng YP, Rusydi A, Pennycook SJ, Venkatesan T, Ariando A. Emergent Topological Hall Effect at a Charge-Transfer Interface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004683. [PMID: 33191619 DOI: 10.1002/smll.202004683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2020] [Revised: 10/25/2020] [Indexed: 06/11/2023]
Abstract
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in the future development of spintronic memory. Here, the emergence and tuning of topological Hall effect (THE) from a CaMnO3 /CaIrO3 /CaMnO3 trilayer structure are studied in detail, which suggests the presence of magnetic Skyrmion-like bubbles. First, by tilting the magnetic field direction, the evolution of the Hall signal suggests a transformation of Skyrmions into topologically-trivial stripe domains, consistent with behaviors predicted by micromagnetic simulations. Second, by varying the thickness of CaMnO3 , the optimal thicknesses for the THE signal emergence are found, which allow identification of the source of Dzyaloshinskii-Moriya interaction (DMI) and its competition with antiferromagnetic superexchange. Employing high-resolution transmission electron microscopy, randomly distributed stacking faults are identified only at the bottom interface and may avoid mutual cancellation of DMI. Last, a spin-transfer torque experiment also reveals a low threshold current density of ≈109 A m-2 for initiating the bubbles' motion. This discovery sheds light on a possible strategy for integrating Skyrmions with antiferromagnetic spintronics.
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Affiliation(s)
- Zhi Shiuh Lim
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Changjian Li
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zhen Huang
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Xiao Chi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Jun Zhou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shengwei Zeng
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Ganesh Ji Omar
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Andrivo Rusydi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Thirumalai Venkatesan
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ariando Ariando
- NUSNNI-NanoCore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
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40
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Namiki W, Tsuchiya T, Takayanagi M, Higuchi T, Terabe K. Room-Temperature Manipulation of Magnetization Angle, Achieved with an All-Solid-State Redox Device. ACS NANO 2020; 14:16065-16072. [PMID: 33137249 DOI: 10.1021/acsnano.0c07906] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
An all-solid-state redox device, composed of magnetite (Fe3O4) thin film and Li+ conducting electrolyte thin film, was fabricated for the manipulation of a magnetization angle at room temperature (RT). This is a key technology for the creation of efficient spintronics devices, but has not yet been achieved at RT by other carrier doping methods. Variations in magnetization angle and magnetic stability were precisely tracked through the use of planar Hall measurements at RT. The magnetization angle was reversibly manipulated at 10° by maintaining magnetic stability. Meanwhile, the manipulatable angle reached 56°, although the manipulation became irreversible when the magnetic stability was reduced. This large manipulation of magnetic angle was achieved through tuning of the 3d electron number and modulation of the internal strain in the Fe3O4 due to the insertion of high-density Li+ (approximately 1021 cm-3). This RT manipulation is applicable to highly integrated spintronics devices due to its simple structure and low electric power consumption.
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Affiliation(s)
- Wataru Namiki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Takashi Tsuchiya
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Makoto Takayanagi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Tohru Higuchi
- Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1 Niijuku, Katsushika, Tokyo 125-8585, Japan
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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41
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Domínguez C, Georgescu AB, Mundet B, Zhang Y, Fowlie J, Mercy A, Waelchli A, Catalano S, Alexander DTL, Ghosez P, Georges A, Millis AJ, Gibert M, Triscone JM. Length scales of interfacial coupling between metal and insulator phases in oxides. NATURE MATERIALS 2020; 19:1182-1187. [PMID: 32778815 DOI: 10.1038/s41563-020-0757-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2019] [Accepted: 07/02/2020] [Indexed: 06/11/2023]
Abstract
Controlling phase transitions in transition metal oxides remains a central feature of both technological and fundamental scientific relevance. A well-known example is the metal-insulator transition, which has been shown to be highly controllable. However, the length scale over which these phases can be established is not yet well understood. To gain insight into this issue, we atomically engineered an artificially phase-separated system through fabricating epitaxial superlattices that consist of SmNiO3 and NdNiO3, two materials that undergo a metal-to-insulator transition at different temperatures. We demonstrate that the length scale of the interfacial coupling between metal and insulator phases is determined by balancing the energy cost of the boundary between a metal and an insulator and the bulk phase energies. Notably, we show that the length scale of this effect exceeds that of the physical coupling of structural motifs, which introduces a new framework for interface-engineering properties at temperatures against the bulk energetics.
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Affiliation(s)
- Claribel Domínguez
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
| | | | - Bernat Mundet
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Yajun Zhang
- Theoretical Materials Physics, CESAM, University of Liège, Liège, Belgium
| | - Jennifer Fowlie
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
| | - Alain Mercy
- Theoretical Materials Physics, CESAM, University of Liège, Liège, Belgium
| | - Adrien Waelchli
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
| | - Sara Catalano
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
| | - Duncan T L Alexander
- Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Philippe Ghosez
- Theoretical Materials Physics, CESAM, University of Liège, Liège, Belgium
| | - Antoine Georges
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, USA
- Collège de France, Paris, France
- Centre de Physique Théorique (CPHT), CNRS, Institut Polytechnique de Paris, Paris, France
| | - Andrew J Millis
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, USA
- Department of Physics, Columbia University, New York, NY, USA
| | - Marta Gibert
- Physik-Institut, University of Zurich, Zurich, Switzerland
| | - Jean-Marc Triscone
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
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42
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Wang L, Yang Z, Bowden ME, Freeland JW, Sushko PV, Spurgeon SR, Matthews B, Samarakoon WS, Zhou H, Feng Z, Engelhard MH, Du Y, Chambers SA. Hole-Trapping-Induced Stabilization of Ni 4 + in SrNiO 3 /LaFeO 3 Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2005003. [PMID: 33006412 DOI: 10.1002/adma.202005003] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 09/06/2020] [Indexed: 06/11/2023]
Abstract
Creating new functionality in materials containing transition metals is predicated on the ability to control the associated charge states. For a given transition metal, there is an upper limit on valence that is not exceeded under normal conditions. Here, it is demonstrated that this limit of 3+ for Ni and Fe can be exceeded via synthesis of (SrNiO3 )m /(LaFeO3 )n superlattices by tuning n and m. The Goldschmidt tolerance constraints are lifted, and SrNi4+ O3 with holes on adjacent O anions is stabilized as a perovskite at the single-unit-cell level (m = 1). Holding m = 1, spectroscopy reveals that the n = 1 superlattice contains Ni3+ and Fe4+ , whereas Ni4+ and Fe3+ are observed in the n = 5 superlattice. It is revealed that the B-site cation valences can be tuned by controlling the magnitude of the FeO6 octahedral rotations, which, in turn, determine the energy balance between Ni3+ /Fe4+ and Ni4+ /Fe3+ , thus controlling emergent electrical properties such as the band alignment and resulting hole confinement. This approach can be extended to other systems for synthesizing novel, metastable layered structures with new functionalities.
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Affiliation(s)
- Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Zhenzhong Yang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark E Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - John W Freeland
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Peter V Sushko
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Steven R Spurgeon
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Bethany Matthews
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Widitha S Samarakoon
- School of Chemical, Biological and Environment Engineering, Oregon State University, Corvallis, OR, 97331, USA
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Zhenxing Feng
- School of Chemical, Biological and Environment Engineering, Oregon State University, Corvallis, OR, 97331, USA
| | - Mark H Engelhard
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99352, USA
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Scott A Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
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43
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Kim JR, Jang J, Go KJ, Park SY, Roh CJ, Bonini J, Kim J, Lee HG, Rabe KM, Lee JS, Choi SY, Noh TW, Lee D. Stabilizing hidden room-temperature ferroelectricity via a metastable atomic distortion pattern. Nat Commun 2020; 11:4944. [PMID: 33009380 PMCID: PMC7532175 DOI: 10.1038/s41467-020-18741-w] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2020] [Accepted: 09/10/2020] [Indexed: 11/09/2022] Open
Abstract
Nonequilibrium atomic structures can host exotic and technologically relevant properties in otherwise conventional materials. Oxygen octahedral rotation forms a fundamental atomic distortion in perovskite oxides, but only a few patterns are predominantly present at equilibrium. This has restricted the range of possible properties and functions of perovskite oxides, necessitating the utilization of nonequilibrium patterns of octahedral rotation. Here, we report that a designed metastable pattern of octahedral rotation leads to robust room-temperature ferroelectricity in CaTiO3, which is otherwise nonpolar down to 0 K. Guided by density-functional theory, we selectively stabilize the metastable pattern, distinct from the equilibrium pattern and cooperative with ferroelectricity, in heteroepitaxial films of CaTiO3. Atomic-scale imaging combined with deep neural network analysis confirms a close correlation between the metastable pattern and ferroelectricity. This work reveals a hidden but functional pattern of oxygen octahedral rotation and opens avenues for designing multifunctional materials.
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Affiliation(s)
- Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Jinhyuk Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Kyoung-June Go
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea
| | - Se Young Park
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
- Department of Physics, Soongsil University, Seoul, 07027, Korea.
| | - Chang Jae Roh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Korea
| | - John Bonini
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854-8019, USA
| | - Jinkwon Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Han Gyeol Lee
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Karin M Rabe
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854-8019, USA
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Korea.
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea.
| | - Daesu Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
- Asia Pacific Center for Theoretical Physics, Pohang, 37673, Korea.
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44
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Roh CJ, Jung MC, Kim JR, Go KJ, Kim J, Oh HJ, Jo YR, Shin YJ, Choi JG, Kim BJ, Noh DY, Choi SY, Noh TW, Han MJ, Lee JS. Polar Metal Phase Induced by Oxygen Octahedral Network Relaxation in Oxide Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003055. [PMID: 32914531 DOI: 10.1002/smll.202003055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Revised: 07/13/2020] [Indexed: 06/11/2023]
Abstract
ABO3 perovskite materials and their derivatives have inherent structural flexibility due to the corner sharing network of the BO6 octahedron, and the large variety of possible structural distortions and strong coupling between lattice and charge/spin degrees of freedom have led to the emergence of intriguing properties, such as high-temperature superconductivity, colossal magnetoresistance, and improper ferroelectricity. Here, an unprecedented polar ferromagnetic metal phase in SrRuO3 (SRO) thin films is presented, arising from the strain-controlled oxygen octahedral rotation (OOR) pattern. For compressively strained SRO films grown on SrTiO3 substrate, oxygen octahedral network relaxation is accompanied by structural phase separation into strained tetragonal and bulk-like orthorhombic phases, and the asymmetric OOR evolution across the phase boundary allows formation of the polar phase, while bulk metallic and ferromagnetic properties are maintained. From the results, it is expected that other oxide perovskite thin films will also yield similar structural environments with variation of OOR patterns, and thereby provide promising opportunities for atomic scale control of material properties through strain engineering.
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Affiliation(s)
- Chang Jae Roh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Myung-Chul Jung
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Kyoung-June Go
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Jinkwon Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Ho Jun Oh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Yong-Ryun Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Yeong Jae Shin
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Jeong Gi Choi
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Bong-Joong Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Do Young Noh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
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45
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Zhang B, Wu L, Feng X, Li C, Miao X, Hui Y, Zhao K, Ding J, Jin B, Chen J, Zhu Y, Sun CJ, Chow GM. Tuning Irreversible Magnetoresistance in Pr 0.67Sr 0.33MnO 3 Film via Octahedral Rotation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43222-43230. [PMID: 32820885 DOI: 10.1021/acsami.0c10402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The oxygen octahedral rotation around the out-of-plane axis is explored to study its effect on metastable status, magnetic cluster glass in manganite. The antiphase rotation around the out-of-plane axis (TiO6 a0a0c-) of SrTiO3 enhances the Mn-O bond anisotropy along in-plane and out-of-plane directions and weakens the ferromagnetic interactions in a 12 nm Pr0.67Sr0.33MnO3 film on the (001) SrTiO3 substrate, which together promote the formation of magnetic cluster-glassiness and enlarges the irreversible magnetoresistance (MR) effect with enhanced relaxation time of charge carriers. The effect of TiO6 a0a0c- in the SrTiO3 substrate on material properties is obvious with a large irreversible MR effect for thin films, which fades away with the increase in film thickness. At 10 K, the irreversible MR is 0.91 for the 12 nm film and 0.22 for the 30 nm film. This work extends current understanding on interfacial coupling to metastable status and could help explore other systems in the perovskite structure with octahedral rotation.
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Affiliation(s)
- Bangmin Zhang
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Lijun Wu
- Condensed Matter Physics & Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Xin Feng
- Department of Materials Science & Engineering, National University of Singapore, 117575, Singapore
| | - Chun Li
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xinyang Miao
- Petroleum and Chemical Industry Federation Key Laboratory of Oil and Gas Terahertz Spectroscopy and Photoelectric Detection, China University of Petroleum, Beijing 102249, China
| | - Yajuan Hui
- Department of Materials Science & Engineering, National University of Singapore, 117575, Singapore
| | - Kun Zhao
- Petroleum and Chemical Industry Federation Key Laboratory of Oil and Gas Terahertz Spectroscopy and Photoelectric Detection, China University of Petroleum, Beijing 102249, China
| | - Jun Ding
- Department of Materials Science & Engineering, National University of Singapore, 117575, Singapore
| | - Biaobing Jin
- Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Jingsheng Chen
- Department of Materials Science & Engineering, National University of Singapore, 117575, Singapore
| | - Yimei Zhu
- Condensed Matter Physics & Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Cheng-Jun Sun
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Gan Moog Chow
- Department of Materials Science & Engineering, National University of Singapore, 117575, Singapore
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46
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Li H, Chen W, Zheng Y. Tailoring nanoscale polarization patterns and transport properties in ferroelectric tunnel junctions by octahedral tilts in electrodes. RSC Adv 2020; 10:35367-35373. [PMID: 35515640 PMCID: PMC9056928 DOI: 10.1039/d0ra04740f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2020] [Accepted: 09/08/2020] [Indexed: 11/21/2022] Open
Abstract
Oxygen octahedral tilts are known for the ability to tailor polarization patterns in perovskites. We propose a way to manipulate nanoscale polarization patterns in ferroelectric tunnel junctions (FTJs) by oxygen octahedral tilts in electrodes combined with interface engineering. Here the electrode is epitaxial SrRuO3 on SrTiO3, and the ferroelectric barrier is a BaTiO3/CaTiO3 superlattice. The octahedral tilt mismatch between electrodes and the barrier is found to be eliminated at one of the two most stable interfaces by the imprinting of in-phase oxygen octahedral tilt from electrodes into the barrier, which further results in anti-polar order in the barrier, while uniform polar order is retained for another stable interface. Further analysis of electronic transport properties shows an increased transmission in FTJ with anti-polar order, which is mainly caused by octahedral tilt induced out-of-plane ferroelectric domain walls. Our results indicate that the oxygen octahedral tilts in electrodes can be used to manipulate polarization patterns and create charged domain walls in FTJs, which further expand the application prospects of FTJ-based devices.
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Affiliation(s)
- Hongfang Li
- School of Materials Science and Engineering, Chongqing Jiaotong University Chongqing 400074 China
| | - Weijin Chen
- School of Materials, Sun Yat-sen University Guangzhou 519082 China
| | - Yue Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University Guangzhou 510275 China +86 20 8411 3231
- Micro & Nano Physics and Mechanics Research Laboratory, School of Physics, Sun Yat-sen University Guangzhou 510275 China
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47
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Cui B, Huan Y, Hu J. Electric field control of ordered oxygen vacancy planes and antiferromagnetic structures in strontium cobaltite. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:344001. [PMID: 32311681 DOI: 10.1088/1361-648x/ab8afe] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2020] [Accepted: 04/20/2020] [Indexed: 06/11/2023]
Abstract
The polarized ionic liquids (ILs) could generate intense electric fields on the surface of solid-state materials and create functional defects by ion migration within them, resulting in phase transitions of metal-insulator or paramagnet-ferromagnet, etc. Such a strong electric field even provides an opportunity for the control of spin ordering in antiferromagnetic (AFM) crystal which is difficult to be manipulated due to the strong exchange coupling between antiparallel spins in the whole bulk. Here we find that the ferromagnetic SrCoO3of 40 nm could be transformed to AFM SrCoO2.5with ordered oxygen vacancy planes either vertical (V-SrCoO2.5) or parallel (P-SrCoO2.5) to the surface by IL gating. The spin Hall magnetoresistances suggest that the AFM easy axes of V- and P-SrCoO2.5are along [010] and11¯0, respectively. The orientations of gating induced oxygen vacancy planes are related to the oxygen framework rotation in the parent SrCoO3and could be controlled by the strain engineering. Our results not only supply a novel way to manipulate the AFM spins by creating functional ordered defects, but also reveal the effect of oxygen framework rotation on the formation of oxygen vacancies under ionic liquid gating.
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Affiliation(s)
- Bin Cui
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China
- Max Planck Institute for Microstructure Physics, 06120 Halle, Germany
| | - Yu Huan
- School of Material Science and Engineering, University of Jinan, Jinan 250022, People's Republic of China
| | - Jifan Hu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China
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van Thiel TC, Fowlie J, Autieri C, Manca N, Šiškins M, Afanasiev D, Gariglio S, Caviglia AD. Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures. ACS MATERIALS LETTERS 2020; 2:389-394. [PMID: 32478332 PMCID: PMC7254603 DOI: 10.1021/acsmaterialslett.9b00540] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/19/2019] [Accepted: 03/09/2020] [Indexed: 06/11/2023]
Abstract
Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here, we determine the effect of the cubic-tetragonal distortion of SrTiO3 on the electronic properties of thin films of SrIrO3, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, SrIrO3 orthorhombic domains couple directly to tetragonal domains in SrTiO3. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the SrIrO3 film. The close proximity to the metal-insulator transition in ultrathin SrIrO3 causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.
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Affiliation(s)
- Thierry C. van Thiel
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Jennifer Fowlie
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Genève 4, Switzerland
| | - Carmine Autieri
- International
Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
- Consiglio
Nazionale delle Ricerche, Istituto Superconduttori,
Materiali Innovativi e Dispositivi (CNR-SPIN), c/o Università G. D’Annunzio, I-66100 Chieti, Italy
| | - Nicola Manca
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Makars Šiškins
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Dmytro Afanasiev
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Stefano Gariglio
- Department
of Quantum Matter Physics, University of
Geneva, 24 Quai Ernest-Ansermet, 1211 Genève 4, Switzerland
| | - Andrea D. Caviglia
- Kavli
Institute of Nanoscience, Delft University
of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
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49
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Cui Z, Grutter AJ, Zhou H, Cao H, Dong Y, Gilbert DA, Wang J, Liu YS, Ma J, Hu Z, Guo J, Xia J, Kirby BJ, Shafer P, Arenholz E, Chen H, Zhai X, Lu Y. Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer. SCIENCE ADVANCES 2020; 6:eaay0114. [PMID: 32300646 PMCID: PMC7148107 DOI: 10.1126/sciadv.aay0114] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2019] [Accepted: 01/13/2020] [Indexed: 05/25/2023]
Abstract
Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180° spin switching between states. We demonstrate a previously unobserved eightfold anisotropy in magnetic SrRuO3 monolayers by inducing a spin reorientation in (SrRuO3)1/(SrTiO3) N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial 〈001〉 direction (N < 3) to eightfold 〈111〉 directions (N ≥ 3). This eightfold anisotropy enables 71° and 109° spin switching in SrRuO3 monolayers, analogous to 71° and 109° polarization switching in ferroelectric BiFeO3. First-principle calculations reveal that increasing the SrTiO3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multistate device applications.
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Affiliation(s)
- Zhangzhang Cui
- Hefei National Laboratory for Physical Sciences at the Microscale, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Alexander J. Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Hui Cao
- Hefei National Laboratory for Physical Sciences at the Microscale, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Yongqi Dong
- Hefei National Laboratory for Physical Sciences at the Microscale, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Dustin A. Gilbert
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA
| | - Jingyuan Wang
- Department of Physics, University of California, Irvine, Irvine, CA 92697, USA
| | - Yi-Sheng Liu
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jiaji Ma
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai 200122, China
| | - Zhenpeng Hu
- School of Physics, Nankai University, Tianjin 300071, China
| | - Jinghua Guo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jing Xia
- Department of Physics, University of California, Irvine, Irvine, CA 92697, USA
| | - Brian J. Kirby
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Padraic Shafer
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Elke Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Cornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14853, USA
| | - Hanghui Chen
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai 200122, China
- State Key Laboratory of Precision Spectroscopy, School of Physical and Material Sciences, East China Normal University, Shanghai 200062, China
- Department of Physics, New York University, New York, NY 10027, USA
| | - Xiaofang Zhai
- Hefei National Laboratory for Physical Sciences at the Microscale, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yalin Lu
- Hefei National Laboratory for Physical Sciences at the Microscale, National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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50
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Wang L, Pan W, Han D, Hu WX, Sun DY. First-principles calculations of oxygen octahedral distortions in LaAlO 3/SrTiO 3(001) superlattices. Phys Chem Chem Phys 2020; 22:5826-5831. [PMID: 32107515 DOI: 10.1039/c9cp06236j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The size, shape and connectivity of oxide octahedra are essential for understanding and controlling the emergent functional properties of ABO3 perovskites. Using first-principles calculations, we systematically studied the oxygen octahedral rotation and deformation in LaAlO3/SrTiO3(001) superlattices. Superlattices with electron- or hole-doped interfaces, or both, are compared. The results showed that there are at least three different types of oxygen octahedral distortions in these superlattices, which is more than what had previously been reported in the literature. We demonstrate that interfacial oxygen octahedral coupling and hole-doping, in addition to epitaxial strain, are the key factors underlying the formation of multiple types of oxygen octahedral rotations in these systems. We confirm that oxygen octahedral rotations and deformations play an essential role in insulator-metal transitions. Furthermore, octahedral distortion leads to ferroelectricity like dipole formation with the polarization vector always pointing to the positively charged interfaces.
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Affiliation(s)
- L Wang
- Department of Physics, East China Normal University, No. 500, Dongchuan Road, Shanghai 200241, People's Republic of China.
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