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Chen X, Xue H, Wen Y, You K, Jiang B, Ding G, Zhou K, Zhao Z, Yan Y, Zhang M, Roy VAL, Han ST, Li F, Kuo CC, Zhou Y. Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration. J Phys Chem Lett 2024:9979-9986. [PMID: 39315653 DOI: 10.1021/acs.jpclett.4c02397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.
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Affiliation(s)
- Xue Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
- School of Physics, Changchun Normal University, Changchun 130032, P. R. China
| | - Haozhe Xue
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yu Wen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kai You
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bei Jiang
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
- Zhuhai Construction Quality Supervision and Inspection Station, Zhuhai, 519015, P. R. China
| | - Zherui Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong 999077, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China
| | - Feng Li
- College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, P. R. China
- National Key Laboratory of Green and Durable Road Engineering under Extreme Environments, Shenzhen University, Shenzhen 518060, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
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2
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Ge M, Chu L, Zeng F, Cao Z, Zhang J. First-principles study of valley splitting of transition-metal dichalcogenides in MX 2/CrI 3 (M = W, Mo; X = S, Se, Te) van der Waals heterostructures. Phys Chem Chem Phys 2024; 26:23784-23791. [PMID: 39229752 DOI: 10.1039/d4cp02486a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2024]
Abstract
The rapid development of valleytronics makes the application of two-dimensional (2D) transition-metal dichalcogenides (TMDs) in valley electronics important. As a new degree of freedom, valley splitting of TMDs has been achieved and tuned by many methods. Among them, using the magnetic proximity effect (MPE) generated from the interface of 2D van der Waals (vdW) heterostructures stacked with TMDs and one magnetic substrate, valley splitting can be achieved through band edge lifting at the adjacent K/K' valley. However, the comprehensive mechanism and strategy of valley splitting in 2D TMD heterostructures need to be explored ulteriorly. Here, we systematically investigated valley splitting of MX2 in MX2/CrI3 (M = W, Mo; X = S, Se, Te) vdW heterostructures using first-principles approaches. We demonstrated that twisting is an effective method to enhance valley splitting in MX2/CrI3 vdW heterostructures. Furthermore, we also showed a ∼10 times enhancement in valley splitting by changing the stacking patterns between WTe2 and CrI3 layers. We attribute this to the interlayer magnetic and electronic coupling between the two layers of the vdW heterostructure. The present results provide a theoretical basis and effective methods for tuning valley splitting 2D TMD heterostructures.
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Affiliation(s)
- Mei Ge
- College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
| | - Leiting Chu
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Fanmin Zeng
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Zhongyin Cao
- Key Laboratory of Spectral Measurement and Analysis of Shanxi Province, Shanxi Normal University, Taiyuan 030031, China
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Junfeng Zhang
- College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China.
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Fu Q, Liu X, Wang S, Wu Z, Xia W, Zhang Q, Ni Z, Hu Z, Lu J. Room-temperature efficient and tunable interlayer exciton emissions in WS 2/WSe 2 heterobilayers at high generation rates. OPTICS LETTERS 2024; 49:5196-5199. [PMID: 39270262 DOI: 10.1364/ol.534473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2024] [Accepted: 08/21/2024] [Indexed: 09/15/2024]
Abstract
Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs). However, the potentials of IXs in TMDC HBs have not been fully studied as efficient and tunable emitters for both photoluminescence (PL) and electroluminescence (EL) at room temperature (RT). Also, the efficiencies of the PL and EL of IXs have not been carefully quantified. In this work, we demonstrate that IX in WS2/WSe2 HBs could serve as promising emitters at high generation rates due to its immunity to efficiency roll-off. Furthermore, by applying gate voltages to balance the electron and hole concentrations and to reinforce the built-in electric fields, high PL quantum yield (QY) and EL external quantum efficiency (EQE) of ∼0.48% and ∼0.11% were achieved at RT, respectively, with generation rates exceeding 1021 cm-2·s-1, which confirms the capabilities of IXs as efficient NIR light emitters by surpassing most of the intralayer emissions from TMDCs.
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Seo DH, Oh GH, Song JM, Heo JW, Park S, Bae H, Park JH, Kim T. Compositionally Graded MoS 2xTe 2(1-x)/MoS 2 van der Waals Heterostructures for Ultrathin Photovoltaic Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:47944-47951. [PMID: 39215688 DOI: 10.1021/acsami.4c10637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
van der Waals heterojunctions utilizing two-dimensional (2D) transition-metal dichalcogenide (TMD) materials have emerged as focal points in the field of optoelectronic devices, encompassing applications in light-emitting devices, photodetectors, solar cells, and beyond. In this study, we transferred few-atomic-layer films of compositionally graded ternary MoS2xTe2(1-x) alloys onto metal-organic chemical vapor deposition-grown molybdenum disulfide (MoS2) as p- and n-type structures, leading to the creation of a van der Waals vertical heterostructure. The characteristics of the fabricated MoS2xTe2(1-x)/MoS2 vertical-stacked heterojunction were investigated considering the influence of tellurium (Te) incorporation. The systematic variation of parameter x (i.e., 0.8, 0.6, 0.5, 0.3, and 0) allowed for an exploration of the impact of Te incorporation on the photovoltaic performance of these heterojunctions. As a result, the power conversion efficiency was enhanced by approximately 6 orders of magnitude with increasing Te concentration; notably, photoresponsivities as high as ∼6.4 A/W were achieved. These findings emphasize the potential for enhancing ultrathin solar energy conversion in heterojunctions based on 2D TMDs.
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Affiliation(s)
- Dong Hyun Seo
- School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea
- 2D Epi, inc, 567 Baekje-daero, Jeonju 54896, Republic of Korea
| | - Guen Hyung Oh
- 2D Epi, inc, 567 Baekje-daero, Jeonju 54896, Republic of Korea
| | - Jong Min Song
- School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea
- 2D Epi, inc, 567 Baekje-daero, Jeonju 54896, Republic of Korea
| | - Ji Won Heo
- School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea
- 2D Epi, inc, 567 Baekje-daero, Jeonju 54896, Republic of Korea
| | - Sungjune Park
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hagyoul Bae
- Department of Electronic Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Joo Hyung Park
- Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, Republic of Korea
| | - TaeWan Kim
- School of Advanced Fusion Studies and AI Semiconductor, University of Seoul, Seoul 02504, Republic of Korea
- 2D Epi, inc, 567 Baekje-daero, Jeonju 54896, Republic of Korea
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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6
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Shrivastava A, Saini S, Kumari D, Singh S, Adam J. Quantum-to-classical modeling of monolayer Ge 2Se 2 and its application in photovoltaic devices. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2024; 15:1153-1169. [PMID: 39290526 PMCID: PMC11406054 DOI: 10.3762/bjnano.15.94] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Accepted: 08/21/2024] [Indexed: 09/19/2024]
Abstract
Since the discovery of graphene in 2004, the unique properties of two-dimensional materials have sparked intense research interest regarding their use as alternative materials in various photonic applications. Transition metal dichalcogenide monolayers have been proposed as transport layers in photovoltaic cells, but the promising characteristics of group IV-VI dichalcogenides are yet to be thoroughly investigated. This manuscript reports on monolayer Ge2Se2 (a group IV-VI dichalcogenide), its optoelectronic behavior, and its potential application in photovoltaics. When employed as a hole transport layer, the material fosters an astonishing device performance. We use ab initio modeling for the material prediction, while classical drift-diffusion drives the device simulations. Hybrid functionals calculate electronic and optical properties to maintain high accuracy. The structural stability has been verified using phonon spectra. The E-k dispersion reveals the investigated material's key electronic properties. The calculations reveal a direct bandgap of 1.12 eV for monolayer Ge2Se2. We further extract critical optical parameters using the Kubo-Greenwood formalism and Kramers-Kronig relations. A significantly large absorption coefficient and a high dielectric constant inspired the design of a monolayer Ge2Se2-based solar cell, exhibiting a high open circuit voltage of V oc = 1.11 V, a fill factor of 87.66%, and more than 28% power conversion efficiency at room temperature. Our findings advocate monolayer Ge2Se2 for various optoelectronic devices, including next-generation solar cells. The hybrid quantum-to-macroscopic methodology presented here applies to broader classes of 2D and 3D materials and structures, showing a path to the computational design of future photovoltaic materials.
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Affiliation(s)
- Anup Shrivastava
- Computational Materials and Photonics (CMP), Department of Electrical Engineering and Computer Science, University of Kassel, Kassel, Germany
- Computational Nano-Material Research Lab (CNMRL), Indian Institute of Information Technology, Allahabad, Uttar Pradesh, India
| | - Shivani Saini
- Computational Materials and Photonics (CMP), Department of Electrical Engineering and Computer Science, University of Kassel, Kassel, Germany
- Computational Nano-Material Research Lab (CNMRL), Indian Institute of Information Technology, Allahabad, Uttar Pradesh, India
| | - Dolly Kumari
- Department of Electrical Engineering, Indian Institute of Technology, Patna, India
| | - Sanjai Singh
- Computational Nano-Material Research Lab (CNMRL), Indian Institute of Information Technology, Allahabad, Uttar Pradesh, India
| | - Jost Adam
- Computational Materials and Photonics (CMP), Department of Electrical Engineering and Computer Science, University of Kassel, Kassel, Germany
- Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Kassel, Germany
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7
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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Lee S, Jin KH, Jung H, Fukutani K, Lee J, Kwon CI, Kim JS, Kim J, Yeom HW. Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta 2NiSe 5. ACS NANO 2024; 18:24784-24791. [PMID: 39178330 PMCID: PMC11394347 DOI: 10.1021/acsnano.4c02784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2024]
Abstract
Excitons in semiconductors and molecules are widely utilized in photovoltaics and optoelectronics, and high-temperature coherent quantum states of excitons can be realized in artificial electron-hole bilayers and an exotic material of an excitonic insulator (EI). Here, we investigate the band gap evolution of a putative high-temperature EI Ta2NiSe5 upon surface doing by alkali adsorbates with angle-resolved photoemission and density functional theory (DFT) calculations. The conduction band of Ta2NiSe5 is filled by the charge transfer from alkali adsorbates, and the band gap decreases drastically upon the increase of metallic electron density. Our DFT calculation, however, reveals that there exist both structural and excitonic contributions to the band gap tuned. While electron doping reduces the band gap substantially, it alone is not enough to close the band gap. In contrast, the structural distortion induced by the alkali adsorbate plays a critical role in the gap closure. This work indicates a combined electronic and structural nature for the EI phase of the present system and the complexity of surface doping beyond charge transfer.
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Affiliation(s)
- Siwon Lee
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics and Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju 54896, Republic of Korea
| | - Hyunjin Jung
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Keisuke Fukutani
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Jinwon Lee
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Quantum Nanoscience, Kavli Institute of Nanoscience, Delft University of Technology, Delft 2628 CJ, The Netherlands
| | - Chang Il Kwon
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jun Sung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jaeyoung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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9
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Guo D, Fu Q, Zhang G, Cui Y, Liu K, Zhang X, Yu Y, Zhao W, Zheng T, Long H, Zeng P, Han X, Zhou J, Xin K, Gu T, Wang W, Zhang Q, Hu Z, Zhang J, Chen Q, Wei Z, Zhao B, Lu J, Ni Z. Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400060. [PMID: 39126132 DOI: 10.1002/adma.202400060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 07/22/2024] [Indexed: 08/12/2024]
Abstract
Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)-based photodetectors and light emitting diode (LEDs). However, the impact of the band offset in vdWHs on important figures of merit in optoelectronic devices has not yet been systematically analyzed. Herein, the regulation of band alignment in WSe2/Bi2Te3- xSex vdWHs (0 ≤ x ≤ 3) is demonstrated through the implementation of chemical vapor deposition (CVD). A combination of experimental and theoretical results proved that the synthesized vdWHs can be gradually tuned from Type I (WSe2/Bi2Te3) to Type III (WSe2/Bi2Se3). As the band alignment changes from Type I to Type III, a remarkable responsivity of 58.12 A W-1 and detectivity of 2.91×1012 Jones (in Type I) decrease in the vdWHs-based photodetector, and the ultrafast photoresponse time is 3.2 µs (in Type III). Additionally, Type III vdWH-based LEDs exhibit the highest luminance and electroluminescence (EL) external quantum efficiencies (EQE) among p-n diodes based on Transition Metal Dichalcogenides (TMDs) at room temperature, which is attributed to band alignment-induced distinct interfacial charge injection. This work serves as a valuable reference for the application and expansion of fundamental band alignment principles in the design and fabrication of future optoelectronic devices.
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Affiliation(s)
- Dingli Guo
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qiang Fu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Guitao Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Yueying Cui
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Kaiyang Liu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Xinlei Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Yali Yu
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weiwei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Ting Zheng
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Haoran Long
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Peiyu Zeng
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Xu Han
- Advanced Research Institute for Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Jun Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Kaiyao Xin
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiancheng Gu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qi Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Zhenliang Hu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Jialin Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qian Chen
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Zhongming Wei
- Institute of Semiconductors and State Key Laboratory of Superlattices and Microstructures, Chinese Academy of Sciences, Beijing, 100083, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
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10
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Sgouros AP, Michos FI, Sigalas MM, Kalosakas G. Thermal Relaxation in Janus Transition Metal Dichalcogenide Bilayers. MATERIALS (BASEL, SWITZERLAND) 2024; 17:4200. [PMID: 39274590 PMCID: PMC11396493 DOI: 10.3390/ma17174200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2024] [Revised: 08/14/2024] [Accepted: 08/16/2024] [Indexed: 09/16/2024]
Abstract
In this work, we employ molecular dynamics simulations with semi-empirical interatomic potentials to explore heat dissipation in Janus transition metal dichalcogenides (JTMDs). The middle atomic layer is composed of either molybdenum (Mo) or tungsten (W) atoms, and the top and bottom atomic layers consist of sulfur (S) and selenium (Se) atoms, respectively. Various nanomaterials have been investigated, including both pristine JTMDs and nanostructures incorporating inner triangular regions with a composition distinct from the outer bulk material. At the beginning of our simulations, a temperature gradient across the system is imposed by heating the central region to a high temperature while the surrounding area remains at room temperature. Once a steady state is reached, characterized by a constant energy flux, the temperature control in the central region is switched off. The heat attenuation is investigated by monitoring the characteristic relaxation time (τav) of the local temperature at the central region toward thermal equilibrium. We find that SMoSe JTMDs exhibit thermal attenuation similar to conventional TMDs (τav~10-15 ps). On the contrary, SWSe JTMDs feature relaxation times up to two times as high (τav~14-28 ps). Forming triangular lateral heterostructures in their surfaces leads to a significant slowdown in heat attenuation by up to about an order of magnitude (τav~100 ps).
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Affiliation(s)
- Aristotelis P Sgouros
- School of Chemical Engineering, National Technical University of Athens (NTUA), GR-15780 Athens, Greece
- Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, Vass. Constantinou 48, GR-11635 Athens, Greece
| | - Fotios I Michos
- Department of Materials Science, University of Patras, GR-26504 Patras, Greece
| | - Michail M Sigalas
- Department of Materials Science, University of Patras, GR-26504 Patras, Greece
| | - George Kalosakas
- Department of Materials Science, University of Patras, GR-26504 Patras, Greece
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11
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Oyibo G, Barrett T, Jois S, Blackburn JL, Lee JU. Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-Ideal p-n Diodes. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3676. [PMID: 39124340 PMCID: PMC11312849 DOI: 10.3390/ma17153676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2024] [Revised: 07/15/2024] [Accepted: 07/20/2024] [Indexed: 08/12/2024]
Abstract
The measurement of the electronic bandgap and exciton binding energy in quasi-one-dimensional materials such as carbon nanotubes is challenging due to many-body effects and strong electron-electron interactions. Unlike bulk semiconductors, where the electronic bandgap is well known, the optical resonance in low-dimensional semiconductors is dominated by excitons, making their electronic bandgap more difficult to measure. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. We show that our s-SWCNT networks have a short minority carrier lifetime due to the presence of interface trap states, making the diodes non-ideal. We use the generation and recombination leakage currents from these non-ideal diodes to measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55 nm), (7,5) (0.83 nm), and (6,5) (0.76 nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs. The techniques outlined here demonstrate a robust strategy that can be applied to measuring the electronic bandgaps and exciton binding energies of a broad variety of nanoscale and quantum-confined semiconductors, including the most modern nanoscale transistors that rely on nanowire geometries.
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Affiliation(s)
- Gideon Oyibo
- College of Nanotechnology, Science, and Engineering, State University of New York-Albany, Albany, NY 12203, USA; (G.O.); (T.B.); (S.J.)
| | - Thomas Barrett
- College of Nanotechnology, Science, and Engineering, State University of New York-Albany, Albany, NY 12203, USA; (G.O.); (T.B.); (S.J.)
| | - Sharadh Jois
- College of Nanotechnology, Science, and Engineering, State University of New York-Albany, Albany, NY 12203, USA; (G.O.); (T.B.); (S.J.)
| | | | - Ji Ung Lee
- College of Nanotechnology, Science, and Engineering, State University of New York-Albany, Albany, NY 12203, USA; (G.O.); (T.B.); (S.J.)
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12
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Song H, Ji S, Kang SG, Shin N. Contact Geometry-Dependent Excitonic Emission in Mixed-Dimensional van der Waals Heterostructures. ACS NANO 2024; 18:19179-19189. [PMID: 38990759 PMCID: PMC11271179 DOI: 10.1021/acsnano.4c04770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 07/03/2024] [Accepted: 07/05/2024] [Indexed: 07/13/2024]
Abstract
Manipulation of excitonic emission in two-dimensional (2D) materials via the assembly of van der Waals (vdW) heterostructures unlocks numerous opportunities for engineering their photonic and optoelectronic properties. In this work, we introduce a category of mixed-dimensional vdW heterostructures, integrating 2D materials with one-dimensional (1D) semiconductor nanowires composed of vdW layers. This configuration induces spatially distinct localized excitonic emissions through a tailored interfacial heterolayer atomic arrangement. By precisely adjusting both the axial and sidewall facet orientations of bottom-up grown PbI2 vdW nanowires and by transferring them onto 1L WSe2 flakes, we establish vdW heterointerfaces with either perpendicular or parallel interatomic arrangements. The edge-standing heterojunction, featuring perpendicular PbI2 layers atop WSe2, promotes efficient charge transfer through the edges and coupled localized states, leading to an enhanced redshifted excitonic emission. Conversely, the layer-by-layer heterointerface, where PbI2 layers are in parallel contact with WSe2, exhibits substantial quenching due to deep midgap states in a type-II alignment, as evidenced by power-dependent measurements and first-principle calculations. Our results introduce a method for actively manipulating excitonic emissions in 2D transition metal dichalcogenides (TMDs) through edge engineering, highlighting their potential in the development of various quantum devices.
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Affiliation(s)
- Hyukjin Song
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Sumin Ji
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
| | - Sung Gu Kang
- School
of Chemical Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea
| | - Naechul Shin
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
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13
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Fan Y, Wan Q, Yao Q, Chen X, Guan Y, Alnatah H, Vaz D, Beaumariage J, Watanabe K, Taniguchi T, Wu J, Sun Z, Snoke D. High Efficiency of Exciton-Polariton Lasing in a 2D Multilayer Structure. ACS PHOTONICS 2024; 11:2722-2728. [PMID: 39036061 PMCID: PMC11258782 DOI: 10.1021/acsphotonics.4c00549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 06/10/2024] [Accepted: 06/11/2024] [Indexed: 07/23/2024]
Abstract
We have placed a van der Waals homostructure, formed by stacking three two-dimensional layers of WS2 separated by insulating hBN, similar to a multiple-quantum well structure, inside a microcavity, which facilitates the formation of quasiparticles known as exciton-polaritons. The polaritons are a combination of light and matter, allowing laser emission to be enhanced by nonlinear scattering, as seen in prior polariton lasers. In the experiments reported here, we have observed laser emission with an ultralow threshold. The threshold was approximately 59 nW/μm2, with a lasing efficiency of 3.82%. These findings suggest a potential for efficient laser operations using such homostructures.
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Affiliation(s)
- Yuening Fan
- State
Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Qiaochu Wan
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Qi Yao
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Xingzhou Chen
- State
Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Yuanjun Guan
- State
Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
| | - Hassan Alnatah
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Daniel Vaz
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Jonathan Beaumariage
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Kenji Watanabe
- Research
Center for Electronic and Optical Materials, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research
Center for Materials Nanoarchitectonics, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jian Wu
- State
Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative
Innovation Center of Extreme Optics, Taiyuan, Shanxi 030006, China
- Chongqing
Key Laboratory of Precision Optics, Chongqing 401121, China
| | - Zheng Sun
- State
Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative
Innovation Center of Extreme Optics, Taiyuan, Shanxi 030006, China
| | - David Snoke
- Department
of Physics and Astronomy, University of
Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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14
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Zhou J, Huang D, Wang Y, Chen Y, Xia M, Zhang X. Chiral absorption enhancement via critically coupled resonances in atomically thin photonic crystal exciton-polaritons. OPTICS LETTERS 2024; 49:3990-3993. [PMID: 39008759 DOI: 10.1364/ol.519454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Accepted: 06/03/2024] [Indexed: 07/17/2024]
Abstract
Atomically thin transition metal dichalcogenides (TMDS) offer a promising route to the scaling down of optoelectronic devices to the ultimate thickness limit. But the weak light-matter interaction caused by their atomically thin nature makes them inevitably rely on external photonic structures to enhance optical absorption. Here, we report chiral absorption enhancement in atomically thin tungsten diselenide (WSe2) using chiral resonances in photonic crystal (PhC) nanostructures patterned directly in WSe2 itself. We show that the quality factors (Q factors) of the resonances grow exponentially as the PhC thickness approaches atomic limit. As such, the strong interaction of high Q factor photonic resonance with the coexisting exciton resonance in WSe2 results into self-coupled exciton-polaritons. By balancing the light coupling and absorption rates, the incident light can critically couple to chiral resonances in WSe2 PhC exciton-polaritons, leading to the theoretically limited 50% optical absorptance with over 84% circular dichroism (CD).
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15
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Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
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Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
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16
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Wang Q, Song Y, Ran Y, Li Y, Pan Y, Ye Y. Coplanar MoS 2-MoTe 2 Heterojunction With the Same Crystal Orientation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308635. [PMID: 38158339 DOI: 10.1002/smll.202308635] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Revised: 12/11/2023] [Indexed: 01/03/2024]
Abstract
Two-dimensional (2D) coplanar heterostructure enables high-performance optoelectronic devices, such as p-n heterojunctions. However, realizing site-controllable and shape-specific 2D coplanar heterojunctions composed of two semiconductors with the same crystal orientation still requires the development of new growth methods. Here, a route to fabricate MoS2-MoTe2 coplanar heterojunctions with the same crystal orientation is reported by exploiting the properties of phase transition and atomic rearrangement during the growth of 2H-MoTe2. Raman spectroscopy and electron microscopy techniques reveal the chemical composition and lattice structure of the heterostructure. Both MoS2 and MoTe2 in the heterojunction are single crystals and have the same lattice orientation, and their shapes can be arbitrarily defined by electron beam lithography. Electrical measurements show that the MoS2 and MoTe2 channels exhibit n-type and p-type transfer characteristics, respectively. The coplanar epitaxy technology can be used to prepare more coplanar heterostructures with novel device functions.
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Affiliation(s)
- Qi Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yiwen Song
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Yuqia Ran
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yanping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Pan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yu Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu, 226010, China
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17
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Zhu J, Shen F, Chen Z, Liu F, Jin S, Lei D, Xu J. Deterministic Areal Enhancement of Interlayer Exciton Emission by a Plasmonic Lattice on Mirror. ACS NANO 2024; 18:13599-13606. [PMID: 38742607 PMCID: PMC11140836 DOI: 10.1021/acsnano.4c00061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 04/16/2024] [Accepted: 04/26/2024] [Indexed: 05/16/2024]
Abstract
The emergence of interlayer excitons (IX) in atomically thin heterostructures of transition metal dichalcogenides (TMDCs) has drawn great attention due to their unique and exotic optical and optoelectronic properties. Because of the spatially indirect nature of IX, its oscillator strength is 2 orders of magnitude smaller than that of the intralayer excitons, resulting in a relatively low photoluminescence (PL) efficiency. Here, we achieve the PL enhancement of IX by more than 2 orders of magnitude across the entire heterostructure area with a plasmonic lattice on mirror (PLoM) structure. The significant PL enhancement mainly arises from resonant coupling between the amplified electric field strength within the PLoM gap and the out-of-plane dipole moment of IX excitons, increasing the emission efficiency by a factor of around 47.5 through the Purcell effect. This mechanism is further verified by detuning the PLoM resonance frequency with respect to the IX emission energy, which is consistent with our theoretical model. Moreover, our simulation results reveal that the PLoM structure greatly alters the far-field radiation of the IX excitons preferentially to the surface normal direction, which increases the collection efficiency by a factor of around 10. Our work provides a reliable and universal method to enhance and manipulate the emission properties of the out-of-plane excitons in a deterministic way and holds great promise for boosting the development of photoelectronic devices based on the IX excitons.
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Affiliation(s)
- Jiasen Zhu
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Fuhuan Shen
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Zefeng Chen
- School
of Optoelectronic Science and Engineering and Collaborative Innovation
Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China
| | - Feihong Liu
- Department
of Materials Science and Engineering, City
University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Shuaiyu Jin
- Department
of Materials Science and Engineering, City
University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Dangyuan Lei
- Department
of Materials Science and Engineering, City
University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Jianbin Xu
- Department
of Electronic Engineering, The Chinese University
of Hong Kong, Shatin 999077, Hong Kong SAR, China
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18
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Patel RP, Shah PV, Siraj S, Sahatiya P, Pataniya PM, Sumesh CK. Fabrication of a wearable and foldable photodetector based on a WSe 2-MXene 2D-2D heterostructure using a scalable handprint technique. NANOSCALE 2024; 16:10011-10029. [PMID: 38700054 DOI: 10.1039/d4nr00615a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Several studies on semiconductor material-based single-band, high-performance photosensitive, and chemically stable photodetectors are available; however, the lack of broad spectral response, device flexibility, and biodegradability prevents them from being used in wearable and flexible electronics. Apart from that, the selection of the device fabrication technique is a very crucial factor nowadays in terms of equipment utilization and environmental friendliness. This report presents a study demonstrating a straightforward solvent- and equipment-free handprint technique for the fabrication of WSe2-Ti3C2TX flexible, biodegradable, robust, and broadband (Vis-NIR) photodetectors. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX), UV-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirm the formation of a WSe2-Ti3C2TX film. The WSe2-Ti3C2TX van der Waals heterostructure plays a key role in enhancing the optoelectrical properties. The as-prepared photodetector exhibits efficient broadband response with a photoresponsivity and a detectivity of 0.3 mA W-1 and 6.8 × 1010 Jones, respectively, under NIR (780 nm) irradiation (1.0 V bias). Under various pressure and temperature conditions, the device's flexibility and durability were tested. The biodegradable photodetector prepared through the solvent- and equipment-free handprint technique has the potential to attract significant interest in wearable and flexible electronics in the future.
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Affiliation(s)
- Rahul P Patel
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Parth V Shah
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - Sohel Siraj
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Parikshit Sahatiya
- Department of Electrical and Electronic Engineering, BITS Pilani Hyderabad, Secunderabad-500078, India
| | - Pratik M Pataniya
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
| | - C K Sumesh
- Department of Physical Sciences, P D Patel Institute of Applied Sciences, Charotar University of Science and Technology, CHARUSAT, Changa, Gujarat, India.
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19
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Hader J, Moloney JV. Photo Luminescence and Radiative Carrier Losses in Monolayer Transition Metal Dichalcogenides. NANO LETTERS 2024; 24:5231-5237. [PMID: 38639404 DOI: 10.1021/acs.nanolett.4c00705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
The carrier losses due to radiative recombination in monolayer transition metal dichalcogenides are studied using fully microscopic many-body models. The density- and temperature-dependent losses in various Mo- and W-based materials are shown to be dominated by Coulomb correlations beyond the Hartree-Fock level. Despite the much stronger Coulomb interaction in 2D materials, the radiative losses are comparable-if not weaker-than in conventional III-V materials. A strong dependence on the dielectric environment is found in agreement with experimental results.
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Affiliation(s)
- Jörg Hader
- Wyant College of Optical Sciences, University of Arizona, 1630 E. University Boulevard, Tucson, Arizona 85721, United States
- Nonlinear Control Strategies Inc., 7562 N. Palm Circle, Tucson, Arizona 85704, United States
| | - Jerome V Moloney
- Wyant College of Optical Sciences, University of Arizona, 1630 E. University Boulevard, Tucson, Arizona 85721, United States
- Nonlinear Control Strategies Inc., 7562 N. Palm Circle, Tucson, Arizona 85704, United States
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20
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Dushaq G, Serunjogi S, Tamalampudi SR, Rasras M. Electro-optic tuning in composite silicon photonics based on ferroionic 2D materials. LIGHT, SCIENCE & APPLICATIONS 2024; 13:92. [PMID: 38641636 PMCID: PMC11031603 DOI: 10.1038/s41377-024-01432-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 03/15/2024] [Accepted: 03/18/2024] [Indexed: 04/21/2024]
Abstract
Tunable optical materials are indispensable elements in modern optoelectronics, especially in integrated photonics circuits where precise control over the effective refractive index is essential for diverse applications. Two-dimensional materials like transition metal dichalcogenides (TMDs) and graphene exhibit remarkable optical responses to external stimuli. However, achieving distinctive modulation across short-wave infrared (SWIR) regions while enabling precise phase control at low signal loss within a compact footprint remains an ongoing challenge. In this work, we unveil the robust electro-refractive response of multilayer ferroionic two-dimensional CuCrP2S6 (CCPS) in the near-infrared wavelength range. By integrating CCPS into silicon photonics (SiPh) microring resonators (MRR), we enhance light-matter interaction and measurement sensitivity to minute phase and absorption variations. Results show that electrically driven Cu ions can tune the effective refractive index on the order of 2.8 × 10-3 RIU (refractive index unit) while preserving extinction ratios and resonance linewidth. Notably, these devices exhibit low optical losses and excellent modulation efficiency of 0.25 V.cm with a consistent blue shift in the resonance wavelengths among all devices for either polarity of the applied voltage. These results outperform earlier findings on phase shifters based on TMDs. Furthermore, our study demonstrates distinct variations in electro-optic tuning sensitivity when comparing transverse electric (TE) and transverse magnetic (TM) modes, revealing a polarization-dependent response that paves the way for diverse applications in light manipulation. The combined optoelectronic and ionotronic capabilities of two-terminal CCPS devices present extensive opportunities across several domains. Their potential applications range from phased arrays and optical switching to their use in environmental sensing and metrology, optical imaging systems, and neuromorphic systems in light-sensitive artificial synapses.
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Affiliation(s)
- Ghada Dushaq
- Department of Electrical and Computer Engineering, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi, United Arab Emirates.
| | - Solomon Serunjogi
- Department of Electrical and Computer Engineering, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi, United Arab Emirates
| | - Srinivasa R Tamalampudi
- Department of Electrical and Computer Engineering, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi, United Arab Emirates
| | - Mahmoud Rasras
- Department of Electrical and Computer Engineering, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi, United Arab Emirates.
- NYU Tandon School of Engineering, New York University, New York, NY, USA.
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21
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Bhattacharjee S, Banerjee A, Chattopadhyay KK. Comparative first principles investigation on the structural, optoelectronic and vibrational properties of strain-engineered graphene-like AlC 3, BC 3and C 3N monolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:265701. [PMID: 38513293 DOI: 10.1088/1361-648x/ad36a1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Accepted: 03/21/2024] [Indexed: 03/23/2024]
Abstract
Three cardinal two-dimensional semiconductorsviz., AlC3, BC3and C3N, closely resembling the graphene structure, are intriguing contenders for emerging optoelectronic and thermomechanical applications. Starting from a critical stability analysis, this density functional theory study delves into a quantitative assessment of structural, mechanical, electronic, optical, vibrational and thermodynamical properties of these monolayers as a function of biaxial strain(ε)in a sublinear regime(-2%⩽ε⩽4%)of elastic deformation. The structures with cohesive energies slightly smaller than graphene, manifest exceptional mechanical stiffness, flexibility and breaking stress. The mechanical parameters have been deployed to further cultivate acoustic attributes and thermal conductivity. The hexagonal structures with mixed ionic-covalent molecular bonds have indirect electronic band-gap and work-function acutely sensitive toε. Dispersions of optical dielectric function, energy loss, refractive index, extinction coefficient, reflectivity, absorption coefficient and conductivity are deciphered in the UV-Vis-NIR regime against strain, where particular frequency bands featuring high polarization, dissipation, absorbance or reflectance are identified. Phonon band-structure and density of states testify dynamic stability in the ground state for all systems except the compressed ones. A comprehensive group theoretical analysis is performed to cultivate rotational; infrared and Raman-active modes, and the nature of molecular vibrations is delineated. The red-shifting of phonon bands andE2g/A1gRaman peaks with increasingε, associates estimation of Grüneisen parameter. Finally, strain-induced alterations of thermodynamic quantities such as entropy, enthalpy, free energy, heat capacity and Debye temperature are studied, followed by a molecular dynamics-based stability assessment under canonical ensemble.
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Affiliation(s)
| | - Anibrata Banerjee
- School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032, India
| | - Kalyan Kumar Chattopadhyay
- Department of Physics, Jadavpur University, Kolkata 700 032, India
- School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032, India
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22
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Shin JC, Jeong JH, Kwon J, Kim YH, Kim B, Woo SJ, Woo KY, Cho M, Watanabe K, Taniguchi T, Kim YD, Cho YH, Lee TW, Hone J, Lee CH, Lee GH. Electrically Confined Electroluminescence of Neutral Excitons in WSe 2 Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310498. [PMID: 38169481 DOI: 10.1002/adma.202310498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 12/29/2023] [Indexed: 01/05/2024]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential in optoelectronic applications due to their direct band gap and exceptional quantum yield. However, TMD-based light-emitting devices have shown low external quantum efficiencies as imbalanced free carrier injection often leads to the formation of non-radiative charged excitons, limiting practical applications. Here, electrically confined electroluminescence (EL) of neutral excitons in tungsten diselenide (WSe2) light-emitting transistors (LETs) based on the van der Waals heterostructure is demonstrated. The WSe2 channel is locally doped to simultaneously inject electrons and holes to the 1D region by a local graphene gate. At balanced concentrations of injected electrons and holes, the WSe2 LETs exhibit strong EL with a high external quantum efficiency (EQE) of ≈8.2 % at room temperature. These experimental and theoretical results consistently show that the enhanced EQE could be attributed to dominant exciton emission confined at the 1D region while expelling charged excitons from the active area by precise control of external electric fields. This work shows a promising approach to enhancing the EQE of 2D light-emitting transistors and modulating the recombination of exciton complexes for excitonic devices.
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Affiliation(s)
- June-Chul Shin
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jae Hwan Jeong
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Junyoung Kwon
- Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Bumho Kim
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Seung-Je Woo
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kie Young Woo
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, Republic of Korea
| | - Yong-Hoon Cho
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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23
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Xie C, Yang Y, Li K, Cao X, Chen S, Zhao Y. A Broadband Photodetector Based on Non-Layered MnS/WSe 2 Type-I Heterojunctions with Ultrahigh Photoresponsivity and Fast Photoresponse. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1590. [PMID: 38612104 PMCID: PMC11012445 DOI: 10.3390/ma17071590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 03/27/2024] [Accepted: 03/28/2024] [Indexed: 04/14/2024]
Abstract
The separation of photogenerated electron-hole pairs is crucial for the construction of high-performance and wide-band responsive photodetectors. The type-I heterojunction as a photodetector is seldomly studied due to its limited separation of the carriers and narrow optical response. In this work, we demonstrated that the high performance of type-I heterojunction as a broadband photodetector can be obtained by rational design of the band alignment and proper modulation from external electric field. The heterojunction device is fabricated by vertical stacking of non-layered MnS and WSe2 flakes. Its type-I band structure is confirmed by the first-principles calculations. The MnS/WSe2 heterojunction presents a wide optical detecting range spanning from 365 nm to 1550 nm. It exhibits the characteristics of bidirectional transportation, a current on/off ratio over 103, and an excellent photoresponsivity of 108 A W-1 in the visible range. Furthermore, the response time of the device is 19 ms (rise time) and 10 ms (fall time), which is much faster than that of its constituents MnS and WSe2. The facilitation of carrier accumulation caused by the interfacial band bending is thought to be critical to the photoresponse performance of the heterojunction. In addition, the device can operate in self-powered mode, indicating a photovoltaic effect.
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Affiliation(s)
| | | | | | | | - Shanshan Chen
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China; (C.X.); (Y.Y.); (K.L.); (X.C.)
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China; (C.X.); (Y.Y.); (K.L.); (X.C.)
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24
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Geng H, Tang J, Wu Y, Yu Y, Guest JR, Zhang R. Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence. ACS NANO 2024; 18:8961-8970. [PMID: 38470346 DOI: 10.1021/acsnano.3c12555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Valley excitons dominate the optoelectronic response of transition-metal dichalcogenides and are drastically affected by structural and environmental inhomogeneities localized in these materials. Critical to understanding and controlling these nanoscale excitonic changes is the ability to correlate the imaging of excitonic states with crystalline structures on the atomic scale. Here, we apply scanning tunneling microscope-induced luminescence microscopy to image valley excitons in a semiconducting transition-metal dichalcogenide monolayer decoupled by a 10 nanometer-thick hexagonal-boron-nitride flake incorporated in a lateral homojunction on an Au electrode surface. This design enables the observation of chiral excitonic emission arising from neutral and charged valley excitons of the monolayer semiconductor at ambipolar voltages with a quantum efficiency up to ∼10-5 photon/electron. The measured light helicity demonstrates considerable circular polarization dependent on the sample voltage, reaching as much as 40%. The real-space luminescence imaging maps─at subnanometer resolution─of the valley excitons reveal striking spatial variations associated with localized inhomogeneities, including surface impurities and possibly nanoscale dielectric and/or potential disorders in the monolayer. Our study introduces a promising format for 2D materials to explore and tailor their optoelectronic processes at the atomic scale.
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Affiliation(s)
- Hairui Geng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China
| | - Jie Tang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China
| | - Yanwei Wu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China
| | - Yuanqin Yu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China
| | - Jeffrey R Guest
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Rui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Optoelectronic Information Acquisition and Manipulation, Ministry of Education, School of Physics and Optoelectronics Engineering, Anhui University, Hefei Anhui 230601, China
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25
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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26
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Tan CM, Fukui N, Takada K, Maeda H, Selezneva E, Bourgès C, Masunaga H, Sasaki S, Tsukagoshi K, Mori T, Sirringhaus H, Nishihara H. Lateral Heterometal Junction Rectifier Fabricated by Sequential Transmetallation of Coordination Nanosheet. Angew Chem Int Ed Engl 2024; 63:e202318181. [PMID: 38179847 DOI: 10.1002/anie.202318181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/22/2023] [Accepted: 01/03/2024] [Indexed: 01/06/2024]
Abstract
Heterostructures of two-dimensional materials realise novel and enhanced physical phenomena, making them attractive research targets. Compared to inorganic materials, coordination nanosheets have virtually infinite combinations, leading to tunability of physical properties and are promising candidates for heterostructure fabrication. Although stacking of coordination materials into vertical heterostructures is widely reported, reports of lateral coordination material heterostructures are few. Here we show the successful fabrication of a seamless lateral heterojunction showing diode behaviour, by sequential and spatially limited immersion of a new metalladithiolene coordination nanosheet, Zn3 BHT, into aqueous Cu(II) and Fe(II) solutions. Upon immersion, the Zn centres in insulating Zn3 BHT are replaced by Cu or Fe ions, resulting in conductivity. The transmetallation is spatially confined, occurring only within the immersed area. We anticipate that our results will be a starting point towards exploring transmetallation of various two-dimensional materials to produce lateral heterojunctions, by providing a new and facile synthetic route.
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Affiliation(s)
- Choon Meng Tan
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Naoya Fukui
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Kenji Takada
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Hiroaki Maeda
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Ekaterina Selezneva
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Cédric Bourgès
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Namiki, Tsukuba, 305-0044, Japan
| | - Hiroyasu Masunaga
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, (Japan)
| | - Sono Sasaki
- Faculty of Fiber Science and Engineering, Kyoto Institute of Technology, 1 Matsugasaki Hashikami-cho, Sakyo-ku, Kyoto 606-8585, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
| | - Kazuhito Tsukagoshi
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
| | - Takao Mori
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
| | - Henning Sirringhaus
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Hiroshi Nishihara
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
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27
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Momeni K, Sakib N, Figueroa DEC, Paul S, Chen CY, Lin YC, Robinson JA. Combined Experimental and Computational Insight into the Role of Substrate in the Synthesis of Two-Dimensional WSe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6644-6652. [PMID: 38264996 DOI: 10.1021/acsami.3c16761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Synthesis of large-area transition-metal dichalcogenides (TMDs) with controlled orientation is a significant challenge to their industrial applications. Substrate plays a vital role in determining the final quality of monolayer materials grown via the chemical vapor deposition process by controlling their orientation, crystal structure, and grain boundary. This study determined the binding energy and equilibrium distance for tungsten diselenide (WSe2) monolayers on crystalline and amorphous silicon dioxide and aluminum dioxide substrates. Differently oriented WSe2 monolayers are considered to investigate the role of the substrate in the orientation, binding strength, and equilibrium distance. This study can pave the way to synthesizing high-quality two-dimensional (2D) materials for electronic and chemical applications.
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Affiliation(s)
- Kasra Momeni
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Nuruzzaman Sakib
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Daniel E Cintron Figueroa
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shiddartha Paul
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
- Department of Mechanical Engineering, The University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Cindy Y Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsin-Chu 30010, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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28
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Leppert L. Excitons in metal-halide perovskites from first-principles many-body perturbation theory. J Chem Phys 2024; 160:050902. [PMID: 38341699 DOI: 10.1063/5.0187213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Accepted: 12/19/2023] [Indexed: 02/13/2024] Open
Abstract
Metal-halide perovskites are a structurally, chemically, and electronically diverse class of semiconductors with applications ranging from photovoltaics to radiation detectors and sensors. Understanding neutral electron-hole excitations (excitons) is key for predicting and improving the efficiency of energy-conversion processes in these materials. First-principles calculations have played an important role in this context, allowing for a detailed insight into the formation of excitons in many different types of perovskites. Such calculations have demonstrated that excitons in some perovskites significantly deviate from canonical models due to the chemical and structural heterogeneity of these materials. In this Perspective, I provide an overview of calculations of excitons in metal-halide perovskites using Green's function-based many-body perturbation theory in the GW + Bethe-Salpeter equation approach, the prevalent method for calculating excitons in extended solids. This approach readily considers anisotropic electronic structures and dielectric screening present in many perovskites and important effects, such as spin-orbit coupling. I will show that despite this progress, the complex and diverse electronic structure of these materials and its intricate coupling to pronounced and anharmonic structural dynamics pose challenges that are currently not fully addressed within the GW + Bethe-Salpeter equation approach. I hope that this Perspective serves as an inspiration for further exploring the rich landscape of excitons in metal-halide perovskites and other complex semiconductors and for method development addressing unresolved challenges in the field.
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Affiliation(s)
- Linn Leppert
- MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands
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29
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Syong WR, Fu JH, Kuo YH, Chu YC, Hakami M, Peng TY, Lynch J, Jariwala D, Tung V, Lu YJ. Enhanced Photogating Gain in Scalable MoS 2 Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces. ACS NANO 2024. [PMID: 38315422 DOI: 10.1021/acsnano.3c10390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin, high-performance optoelectronics. While numerous schemes have been used to enhance absorption in 2D semiconductors, such enhanced device performance in scalable monolayer photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8 pA and long-term stability over 40 days. Upon comparison with control devices, we observe an overall enhancement factor of >100; this can be attributed to the local strong EM field enhanced photogating effect by the resonant plasmonic metasurface. Considering the compatibility of 2D semiconductors and hafnium nitride with the Si CMOS process and their scalability across wafer sizes, our results facilitate the smooth incorporation of 2D semiconductor-based photodetectors into the fields of imaging, sensing, and optical communication applications.
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Affiliation(s)
- Wei-Ren Syong
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Jui-Han Fu
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Hsin Kuo
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yu-Cheng Chu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Mariam Hakami
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Tzu-Yu Peng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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30
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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31
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Ding S, Liu C, Li Z, Lu Z, Tao Q, Lu D, Chen Y, Tong W, Liu L, Li W, Ma L, Yang X, Xiao Z, Wang Y, Liao L, Liu Y. Ag-Assisted Dry Exfoliation of Large-Scale and Continuous 2D Monolayers. ACS NANO 2024; 18:1195-1203. [PMID: 38153837 DOI: 10.1021/acsnano.3c11573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Two-dimensional (2D) semiconductors have generated considerable attention for high-performance electronics and optoelectronics. However, to date, it is still challenging to mechanically exfoliate large-area and continuous monolayers while retaining their intrinsic properties. Here, we report a simple dry exfoliation approach to produce large-scale and continuous 2D monolayers by using a Ag film as the peeling tape. Importantly, the conducting Ag layer could be converted into AgOx nanoparticles at low annealing temperature, directly decoupling the conducting Ag with the underlayer 2D monolayers without involving any solution or etching process. Electrical characterization of the monolayer MoS2 transistor shows a decent carrier mobility of 42 cm2 V-1 s-1 and on-state current of 142 μA/μm. Finally, a plasmonic enhancement photodetector could be simultaneously realized due to the direct formation of Ag nanoparticles arrays on MoS2 monolayers, without complex approaches for nanoparticle synthesis and integration processes, demonstrating photoresponsivity and detectivity of 6.3 × 105 A/W and 2.3 × 1013 Jones, respectively.
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Affiliation(s)
- Shuimei Ding
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Chang Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Wei Tong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Wanying Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Xiaokun Yang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Zhaojing Xiao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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32
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Li D, Liu ZF, Yang L. Accelerating GW Calculations of Point Defects with the Defect-Patched Screening Approximation. J Chem Theory Comput 2023; 19:9435-9444. [PMID: 38059814 DOI: 10.1021/acs.jctc.3c01032] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
The GW approximation has been widely accepted as an ab initio tool for calculating defect levels with the many-electron effect included. However, the GW simulation cost increases dramatically with the system size, and unfortunately, large supercells are often required to model low-density defects that are experimentally relevant. In this work, we propose to accelerate GW calculations of point defects by reducing the simulation cost of many-electron screening, which is the primary computational bottleneck. The random-phase approximation of many-electron screening is divided into two parts: one is the intrinsic screening, calculated using a unit cell of pristine structures, and the other is the defect-induced screening, calculated using the supercell within a small energy window. Depending on specific defects, one may only need to consider the intrinsic screening or include the defect contribution. This approach avoids the summation of many conduction states of supercells and significantly reduces the simulation cost. We have applied it to calculate various point defects, including neutral and charged defects in two-dimensional and bulk systems with small or large bandgaps. The results are consistent with those from the direct GW simulations. This defect-patched screening approach not only clarifies the roles of defects in many-electron screening but also paves the way to fast screen defect structures/materials for novel applications, including single-photon sources, quantum qubits, and quantum sensors.
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Affiliation(s)
- Du Li
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Zhen-Fei Liu
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
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33
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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34
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Dziobek-Garrett R, Hilliard S, Sriramineni S, Ambrozaite O, Zhu Y, Hudak BM, Brintlinger TH, Chowdhury T, Kempa TJ. Controlling Morphology and Excitonic Disorder in Monolayer WSe 2 Grown by Salt-Assisted CVD Methods. ACS NANOSCIENCE AU 2023; 3:441-450. [PMID: 38144700 PMCID: PMC10740127 DOI: 10.1021/acsnanoscienceau.3c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/08/2023] [Accepted: 08/08/2023] [Indexed: 12/26/2023]
Abstract
Chemical synthesis is a compelling alternative to top-down fabrication for controlling the size, shape, and composition of two-dimensional (2D) crystals. Precision tuning of the 2D crystal structure has broad implications for the discovery of new phenomena and the reliable implementation of these materials in optoelectronic, photovoltaic, and quantum devices. However, precise and predictable manipulation of the edge structure in 2D crystals through gas-phase synthesis is still a formidable challenge. Here, we demonstrate a salt-assisted low-pressure chemical vapor deposition method that enables tuning W metal flux during growth of 2D WSe2 monolayers and, thereby, direct control of their edge structure and optical properties. The degree of structural disorder in 2D WSe2 is a direct function of the W metal flux, which is controlled by adjusting the mass ratio of WO3 to NaCl. This edge disorder then couples to excitonic disorder, which manifests as broadened and spatially varying emission profiles. Our work links synthetic parameters with analyses of material morphology and optical properties to provide a unified understanding of intrinsic limits and opportunities in synthetic 2D materials.
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Affiliation(s)
- Reynolds Dziobek-Garrett
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Sachi Hilliard
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Shreya Sriramineni
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Ona Ambrozaite
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Yifei Zhu
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Bethany M. Hudak
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Todd H. Brintlinger
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Tomojit Chowdhury
- Department
of Chemistry and Chicago Materials Research Center, University of Chicago, Chicago, Illinois 60637, United States of America
| | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
- Department
of Materials Science and Engineering, Johns
Hopkins University, Baltimore, Maryland 21218, United States of America
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35
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Tong L, Su C, Li H, Wang X, Fan W, Wang Q, Kunsági-Máté S, Yan H, Yin S. Self-Driven Gr/WSe 2/Gr Photodetector with High Performance Based on Asymmetric Schottky van der Waals Contacts. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38017658 DOI: 10.1021/acsami.3c14331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional (2D) self-driven photodetectors have a wide range of applications in wearable, imaging, and flexible electronics. However, the preparation of most self-powered photodetectors is still complex and time-consuming. Simultaneously, the constant work function of a metal, numerous defects, and a large Schottky barrier at the 2D/metal interface hinder the transmission and collection of optical carriers, which will suppress the optical responsivity of the device. This paper proposed a self-driven graphene/WSe2/graphene (Gr/WSe2/Gr) photodetector with asymmetric Schottky van der Waals (vdWs) contacts. The vdWs contacts are formed by transferring Gr as electrodes using the dry-transfer method, obviating the limitations of defects and Fermi-level pinning at the interface of electrodes made by conventional metal deposition methods to a great extent and resulting in superior dynamic response, which leads to a more efficient and faster collection of photogenerated carriers. This work also demonstrates that the significant surface potential difference of Gr electrodes is a crucial factor to ensure their superior performance. The self-driven Gr/WSe2/Gr photodetector exhibits an ultrahigh Ilight/Idark ratio of 106 with a responsivity value of 20.31 mA/W and an open-circuit voltage of 0.37 V at zero bias. The photodetector also has ultrafast response speeds of 42.9 and 56.0 μs. This paper provides a feasible way to develop self-driven optoelectronic devices with a simple structure and excellent performance.
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Affiliation(s)
- Lei Tong
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Can Su
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China
| | - Xinyu Wang
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Wenhao Fan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Qingguo Wang
- GuoAng Zhuotai (Tianjin) Smart IOT Technology Co., Ltd., Tianjin 301700, China
| | - Sándor Kunsági-Máté
- Department of Organic and Medicinal Chemistry, Faculty of Pharmacy, University of Pécs, Honvéd útja 1, Honvéd street 1, Pécs H-7624, Hungary
- János Szentágothai Research Center, Ifjúság útja 20, Pécs H-7624, Hungary
| | - Hui Yan
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
| | - Shougen Yin
- Key Laboratory of Display Materials and Photoelectric Devices (Ministry of Education), Tianjin Key Laboratory of Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Materials Science and Engineering, School of Science, Tianjin University of Technology, Tianjin 300384, China
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36
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Wang Y, Yuan Q, Meng X, Sun Y. Bio-inspired synaptic behavior simulation in thin-film transistors based on molybdenum disulfide. J Chem Phys 2023; 159:184702. [PMID: 37937938 DOI: 10.1063/5.0174857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 10/19/2023] [Indexed: 11/09/2023] Open
Abstract
Synaptic behavior simulation in transistors based on MoS2 has been reported. MoS2 was utilized as the active layer to prepare ambipolar thin-film transistors. The excitatory postsynaptic current phenomenon was simulated, observing a gradual voltage decay following the removal of applied pulses, ultimately resulting in a response current slightly higher than the initial current. Subsequently, ±5 V voltages were separately applied for ten consecutive pulse voltage tests, revealing short-term potentiation and short-term depression behaviors. After 92 consecutive positive pulses, the device current transitioned from an initial value of 0.14 to 28.3 mA. Similarly, following 88 consecutive negative pulses, the device current changed, indicating long-term potentiation and long-term depression behaviors. We also employed a pair of continuous triangular wave pulses to evaluate paired-pulse facilitation behavior, observing that the response current of the second stimulus pulse was ∼1.2× greater than that of the first stimulus pulse. The advantages and prospects of using MoS2 as a material for thin-film transistors were thoroughly displayed.
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Affiliation(s)
- Yufei Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Qi Yuan
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Xinru Meng
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
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37
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Konthoujam JS, Lin YS, Chang YH, Lin HT, Chang CY, Zhang YW, Lin SY, Kuo HC, Shih MH. Dynamical characteristics of AC-driven hybrid WSe 2 monolayer/AlGaInP quantum wells light-emitting device. DISCOVER NANO 2023; 18:140. [PMID: 37943364 PMCID: PMC10635932 DOI: 10.1186/s11671-023-03920-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Accepted: 10/30/2023] [Indexed: 11/10/2023]
Abstract
The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such as high resistance losses from ohmic contacts or the need for complex heterostructures, which restricts the device applications. Despite the fact that AC-driven light emitting devices have developed ways to overcome these challenges, there is still a significant demand for multiple wavelength emission from a single device, which is necessary for full color light emitting devices. Here, we developed a dual-color AC-driven light-emitting device by integrating the WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures in the form of capacitor structure using AlOx insulating layer between the two emitters. In order to comprehend the characteristics of the hybrid device under various driving circumstances, we investigate the frequency-dependent EL intensity of the hybrid device using an equivalent RC circuit model. The time-resolved electroluminescence (TREL) characteristics of the hybrid device were analyzed in details to elucidate the underlying physical mechanisms governing its performance under varying applied frequencies. This dual-color hybrid light-emitting device enables the use of 2-D TMDC-based light emitters in a wider range of applications, including broad-band LEDs, quantum display systems, and chip-scale optoelectronic integrated systems.
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Affiliation(s)
| | - Yen-Shou Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ya-Hui Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Hsiang-Ting Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
| | - Chiao-Yun Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Wei Zhang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Shih-Yen Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Hao-Chung Kuo
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
- Department of Photonics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan.
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38
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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39
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Kim M, Ma KY, Kim H, Lee Y, Park JH, Shin HS. 2D Materials in the Display Industry: Status and Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205520. [PMID: 36539122 DOI: 10.1002/adma.202205520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.
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Affiliation(s)
- Minsu Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Kyung Yeol Ma
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Hyeongjoon Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Yeonju Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | | | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
- Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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40
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Shi X, Li W, Lan X, Guo Q, Zhu G, Du W, Wang T. Room-Temperature Polarized Light-Emitting Diode-Based on a 2D Monolayer Semiconductor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301949. [PMID: 37357166 DOI: 10.1002/smll.202301949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 06/05/2023] [Indexed: 06/27/2023]
Abstract
Transition metal dichalcogenide (TMD)-based 2D monolayer semiconductors, with the direct bandgap and the large exciton binding energy, are widely studied to develop miniaturized optoelectronic devices, e.g., nanoscale light-emitting diodes (LEDs). However, in terms of polarization control, it is still quite challenging to realize polarized electroluminescence (EL) from TMD monolayers, especially at room temperature. Here, by using Ag nanowire top electrode, polarized LEDs are demonstrated based on 2D monolayer semiconductors (WSe2 , MoSe2 , and WS2 ) at room temperature with a degree of polarization (DoP) ranging from 50% to 63%. The highly anisotropic EL emission comes from the 2D/Ag interface via the electron/hole injection and recombination process, where the EL emission is also enhanced by the polarization-dependent plasmonic resonance of the Ag nanowire. These findings introduce new insights into the design of polarized 2D LED devices at room temperature and may promote the development of miniaturized 2D optoelectronic devices.
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Affiliation(s)
- Xiuqi Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xinhui Lan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qianqian Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Guangpeng Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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Lee YM, Kim SE, Park JE. Strong coupling in plasmonic metal nanoparticles. NANO CONVERGENCE 2023; 10:34. [PMID: 37470924 PMCID: PMC10359241 DOI: 10.1186/s40580-023-00383-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Accepted: 07/08/2023] [Indexed: 07/21/2023]
Abstract
The study of strong coupling between light and matter has gained significant attention in recent years due to its potential applications in diverse fields, including artificial light harvesting, ultraefficient polariton lasing, and quantum information processing. Plasmonic cavities are a compelling alternative of conventional photonic resonators, enabling ultracompact polaritonic systems to operate at room temperature. This review focuses on colloidal metal nanoparticles, highlighting their advantages as plasmonic cavities in terms of their facile synthesis, tunable plasmonic properties, and easy integration with excitonic materials. We explore recent examples of strong coupling in single nanoparticles, dimers, nanoparticle-on-a-mirror configurations, and other types of nanoparticle-based resonators. These systems are coupled with an array of excitonic materials, including atomic emitters, semiconductor quantum dots, two-dimensional materials, and perovskites. In the concluding section, we offer perspectives on the future of strong coupling research in nanoparticle systems, emphasizing the challenges and potentials that lie ahead. By offering a thorough understanding of the current state of research in this field, we aim to inspire further investigations and advances in the study of strongly coupled nanoparticle systems, ultimately unlocking new avenues in nanophotonic applications.
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Affiliation(s)
- Yoon-Min Lee
- Department of Chemistry, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea
| | - Seong-Eun Kim
- Department of Chemistry, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea
| | - Jeong-Eun Park
- Department of Chemistry, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea.
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42
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Ji C, Chang YH, Huang CS, Huang BR, Chen YT. Controllable Doping Characteristics for WS xSe y Monolayers Based on the Tunable S/Se Ratio. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2107. [PMID: 37513118 PMCID: PMC10385163 DOI: 10.3390/nano13142107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 07/10/2023] [Accepted: 07/13/2023] [Indexed: 07/30/2023]
Abstract
Transition metal dichalcogenides (TMDs) have attracted much attention because of their unique characteristics and potential applications in electronic devices. Recent reports have successfully demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2, MoxWySe2, and WSxSey monolayers that exhibit tunable band gap energies. However, few works have examined the doping behavior of those 2D monolayers. This study synthesizes WSxSey monolayers using the CVD process, in which different heating temperatures are applied to sulfur powders to control the ratio of S to Se in WSxSey. Increasing the Se component in WSxSey monolayers produced an apparent electronic state transformation from p-type to n-type, recorded through energy band diagrams. Simultaneously, p-type characteristics gradually became clear as the S component was enhanced in WSxSey monolayers. In addition, Raman spectra showed a red shift of the WS2-related peaks, indicating n-doping behavior in the WSxSey monolayers. In contrast, with the increase of the sulfur component, the blue shift of the WSe2-related peaks in the Raman spectra involved the p-doping behavior of WSxSey monolayers. In addition, the optical band gap of the as-grown WSxSey monolayers from 1.97 eV to 1.61 eV is precisely tunable via the different chalcogenide heating temperatures. The results regarding the doping characteristics of WSxSey monolayers provide more options in electronic and optical design.
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Affiliation(s)
- Chen Ji
- Graduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
| | - Yung-Huang Chang
- Bachelor Program in Industrial Technology, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
| | - Chien-Sheng Huang
- Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
| | - Bohr-Ran Huang
- Graduate Institute of Electro-Optical Engineering, Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 106335, Taiwan
| | - Yuan-Tsung Chen
- Graduate School of Materials Science, National Yunlin University of Science and Technology, Douliu 64002, Yunlin, Taiwan
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43
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Asaithambi A, Kazemi Tofighi N, Ghini M, Curreli N, Schuck PJ, Kriegel I. Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers. Chem Commun (Camb) 2023; 59:7717-7730. [PMID: 37199319 PMCID: PMC10281493 DOI: 10.1039/d3cc01125a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 05/02/2023] [Indexed: 05/19/2023]
Abstract
Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.
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Affiliation(s)
- Aswin Asaithambi
- Functional Nanosystems, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.
| | - Nastaran Kazemi Tofighi
- Functional Nanosystems, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.
| | - Michele Ghini
- Functional Nanosystems, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.
- Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, 1015, Switzerland
| | - Nicola Curreli
- Functional Nanosystems, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Ilka Kriegel
- Functional Nanosystems, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy.
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44
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Ramsden H, Sarkar S, Wang Y, Zhu Y, Kerfoot J, Alexeev EM, Taniguchi T, Watanabe K, Tongay S, Ferrari AC, Chhowalla M. Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures. ACS NANO 2023. [PMID: 37319105 DOI: 10.1021/acsnano.3c03261] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe2 (1L-WSe2) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe2. This accumulation of charge leads to dynamic doping of 1L-WSe2, reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated.
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Affiliation(s)
- Hugh Ramsden
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Soumya Sarkar
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yan Wang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yiru Zhu
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - James Kerfoot
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
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45
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Li D, Pan A. Perovskite sensitized 2D photodiodes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:139. [PMID: 37277325 DOI: 10.1038/s41377-023-01187-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A new type of perovskite sensitized programmable WSe2 photodiode is constructed based on MAPbI3/WSe2 heterojunction, presenting flexible reconfigurable characteristics and prominent optoelectronic performances.
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Affiliation(s)
- Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
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46
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Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
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47
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Ilyakov I, Ponomaryov A, Reig DS, Murphy C, Mehew JD, de Oliveira TVAG, Prajapati GL, Arshad A, Deinert JC, Craciun MF, Russo S, Kovalev S, Tielrooij KJ. Ultrafast Tunable Terahertz-to-Visible Light Conversion through Thermal Radiation from Graphene Metamaterials. NANO LETTERS 2023; 23:3872-3878. [PMID: 37116109 PMCID: PMC10176577 DOI: 10.1021/acs.nanolett.3c00507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Several technologies, including photodetection, imaging, and data communication, could greatly benefit from the availability of fast and controllable conversion of terahertz (THz) light to visible light. Here, we demonstrate that the exceptional properties and dynamics of electronic heat in graphene allow for a THz-to-visible conversion, which is switchable at a sub-nanosecond time scale. We show a tunable on/off ratio of more than 30 for the emitted visible light, achieved through electrical gating using a gate voltage on the order of 1 V. We also demonstrate that a grating-graphene metamaterial leads to an increase in THz-induced emitted power in the visible range by 2 orders of magnitude. The experimental results are in agreement with a thermodynamic model that describes blackbody radiation from the electron system heated through intraband Drude absorption of THz light. These results provide a promising route toward novel functionalities of optoelectronic technologies in the THz regime.
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Affiliation(s)
- Igor Ilyakov
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - Alexey Ponomaryov
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - David Saleta Reig
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Conor Murphy
- Centre for Graphene Science, University of Exeter, Exeter, EX4 4QF, U.K
| | - Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Thales V A G de Oliveira
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - Gulloo Lal Prajapati
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - Atiqa Arshad
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - Jan-Christoph Deinert
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | | | - Saverio Russo
- Centre for Graphene Science, University of Exeter, Exeter, EX4 4QF, U.K
| | - Sergey Kovalev
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra, Barcelona 08193, Spain
- Department of Applied Physics, TU Eindhoven, Den Dolech 2, 5612 AZ, Eindhoven, The Netherlands
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48
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Rosati R, Paradisanos I, Huang L, Gan Z, George A, Watanabe K, Taniguchi T, Lombez L, Renucci P, Turchanin A, Urbaszek B, Malic E. Interface engineering of charge-transfer excitons in 2D lateral heterostructures. Nat Commun 2023; 14:2438. [PMID: 37117167 PMCID: PMC10147613 DOI: 10.1038/s41467-023-37889-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Accepted: 04/04/2023] [Indexed: 04/30/2023] Open
Abstract
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe2-WSe2 heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
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Affiliation(s)
- Roberto Rosati
- Department of Physics, Philipps-Universität Marburg, Renthof 7, D-35032, Marburg, Germany.
| | - Ioannis Paradisanos
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, IN, USA
| | - Ziyang Gan
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Antony George
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Laurent Lombez
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Pierre Renucci
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
| | - Andrey Turchanin
- Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743, Jena, Germany
- Abbe Centre of Photonics, 07745, Jena, Germany
| | - Bernhard Urbaszek
- Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077, Toulouse, France
- Institute of Condensed Matter Physics, Technische Universität Darmstadt, 64289, Darmstadt, Germany
| | - Ermin Malic
- Department of Physics, Philipps-Universität Marburg, Renthof 7, D-35032, Marburg, Germany
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49
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Lyu J, Yin Y, Kong D, Zhao C, Zhang X, Li A, Yi W, Wu Y, Wang X, Liu R. On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire. J Phys Chem Lett 2023; 14:3861-3868. [PMID: 37067291 DOI: 10.1021/acs.jpclett.3c00613] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The integration of optical waveguide and on-chip nanolasers source has been one of the trends in photonic devices. For on-chip nanolasers, the integration of nanowires and high antidamage ability are imperative. Herein, we realized the on-chip ultralow-threshold and wavelength-tunable lasing from alloyed CdSSe nanobelt chip that is excited by the emission from linked ZnO nanowires. ZnO nanowire arrays are integrated into CdSSe nanobelt chips by the dry transfer method. A one-dimensional (1D) ZnO nanowire forms high-quality optical resonators and serves as an indirect pumping light to stimulate CdSSe nanobelt chips, and then wavelength-tunable lasing is generated with the ultralow threshold of 3.88 μW. The lasing mechanism is quite different than direct excitation by nanosecond laser pulse and indirect pumping by ZnO emission. The ZnO-CdSSe blocks provide a new solution to realize nanowire lasing from linked nanowires rather than direct laser pumping and thus avoid the light direct damage under general nanosecond laser excitation.
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Affiliation(s)
- Jing Lyu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Yunsong Yin
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Denan Kong
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunyu Zhao
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Xinyu Zhang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - An Li
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Wen Yi
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yumei Wu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
| | - Xianshuang Wang
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nano-photonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, P. R. China
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50
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Torun E, Paleari F, Milošević MV, Wirtz L, Sevik C. Intrinsic Control of Interlayer Exciton Generation in Van der Waals Materials via Janus Layers. NANO LETTERS 2023; 23:3159-3166. [PMID: 37037187 DOI: 10.1021/acs.nanolett.2c04724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. We investigate different MoS2@Janus layer combinations using first-principles methods including excitons and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between dark interlayer exciton states and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS2@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient generation of charge-separated electron-hole pairs.
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Affiliation(s)
- Engin Torun
- Department of Physics and Materials Science, University of Luxembourg, 162a avenue de la Faïencerie, Luxembourg L-1511, Luxembourg
| | | | - Milorad V Milošević
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, Antwerp B-2020, Belgium
- Instituto de Fisica, Universidade Federal de Mato Grosso, Cuiaba, Mato Grosso 78060-900, Brazil
| | - Ludger Wirtz
- Department of Physics and Materials Science, University of Luxembourg, 162a avenue de la Faïencerie, Luxembourg L-1511, Luxembourg
| | - Cem Sevik
- Department of Physics & NANOlab Center of Excellence, University of Antwerp, Groenenborgerlaan 171, Antwerp B-2020, Belgium
- Department of Mechanical Engineering, Faculty of Engineering, Eskisehir Technical University, Eskisehir 26555, Turkey
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